Display device

Abstract

A display device according to an exemplary embodiment of the present disclosure includes: a substrate including a plurality of sub-pixels; a planarization layer disposed over the substrate and having a first opening region; an anode electrode disposed in the first opening region and a side portion of the planarization layer adjacent to the first opening region; a bank exposing a portion of the anode electrode and having a second open region corresponding to the first open region; a recrystallization layer provided on the bank and containing a fluorine group; an organic layer disposed on the anode electrode exposed through the second open region; and a cathode electrode disposed on the organic layer and the recrystallization layer. Accordingly, front efficiency and color viewing angle may be improved.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2024 - 0012385, filed with the Korean Intellectual Property Office on January 26, 2024, the disclosure of which is incorporated herein by reference. Technical field

[0003] The present disclosure relates to a display device. Background art

[0004] As the information age has arrived, the field of display devices that visually present electrical information signals has developed rapidly and continuous research has been conducted to improve the performance of various display devices, such as thin thickness, light weight, and low power consumption.

[0005] Representative display devices may include a liquid crystal display (LCD) device, a field emission display (FED) device, an electro - wetting display (EWD) device, and an organic light - emitting display (OLED) device.

[0006] An electroluminescent display device, represented by an organic light - emitting display device, is a self - emissive display device, so it does not require a separate light source, which is different from a liquid crystal display device. Therefore, an electroluminescent display device can be manufactured to have a light weight and a small thickness. In addition, since an electroluminescent display device is advantageous not only in terms of power consumption due to low - voltage driving, but also in terms of color realization, response speed, viewing angle, and contrast ratio (CR), it is expected to be used in various fields.

[0007] An electroluminescent display device forms a light - emitting diode by disposing a plurality of organic layers each including a light - emitting layer between two electrodes, an anode electrode and a cathode electrode. For example, when holes are injected from the anode electrode into the light - emitting layer and electrons are injected from the cathode electrode into the light - emitting layer, the injected electrons and holes recombine in the light - emitting layer, thereby forming excitons and emitting light.

[0008] However, an electroluminescent display device has the following problem: among the light emitted from the light - emitting layer, some light cannot leave the display panel and is trapped in the display panel, so that the light extraction efficiency of the electroluminescent display device is reduced, thereby reducing the luminous efficiency. Summary of the invention

[0009] One object to be achieved by the present disclosure is to provide a display device that improves light extraction efficiency and improves the color viewing angle.

[0010] Another object to be achieved by the present disclosure is to provide a display device having improved reliability.

[0011] The object of the present disclosure is not limited to the above objects, and those skilled in the art can clearly understand other objects not mentioned above from the following description.

[0012] To achieve the above object, according to one aspect of the present disclosure, a display device may include: a substrate including a plurality of sub-pixels; a planarization layer disposed above the substrate and having a first opening region; an anode electrode disposed in the first opening region and on a side portion of the planarization layer adjacent to the first opening region; a bank exposing a part of the anode electrode and having a second opening region corresponding to the first opening region; a recrystallization layer disposed on the bank and containing a fluorine group; an organic layer disposed on the anode electrode exposed through the second opening region; and a cathode electrode disposed on the organic layer and the recrystallization layer.

[0013] Other details of the exemplary embodiments are included in the detailed description and the drawings.

[0014] According to the present disclosure, the anode electrode includes a side mirror structure, thereby providing a display device with excellent luminous efficiency. Therefore, low power is achieved to reduce power consumption. In addition, greenhouse gases generated due to the use of electricity are reduced, thereby achieving environmental, social, and governance (ESG).

[0015] According to the present disclosure, a recrystallization layer containing a fluorine group is formed above the bank to absorb or block the exhaust gas of the bank or the planarization layer, thereby improving the reliability of the display device.

[0016] According to the present disclosure, the recrystallization layer is heat-treated at a low temperature to increase the surface roughness, thereby improving the front efficiency and color viewing angle according to the increase in light extraction.

[0017] The effects according to the present disclosure are not limited to the contents illustrated above, and more various effects are included in the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other aspects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, wherein:

[0019] Figure 1 is a block diagram of a display device according to an exemplary embodiment of the present disclosure;

[0020] Figure 2 is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure;

[0021] Figure 3 is a diagram illustrating a pixel structure of a display device according to a first exemplary embodiment of the present disclosure;

[0022] Figure 4 is a view illustrating a cross-sectional structure of a display panel according to a first exemplary embodiment of the present disclosure;

[0023] Figure 5 is a view illustrating a light-emitting image according to a first exemplary embodiment of the present disclosure;

[0024] Figure 6 is a view illustrating a cross-sectional structure of a display panel according to a second exemplary embodiment of the present disclosure;

[0025] Figure 7 is a view illustrating a pixel structure of a display device according to a third exemplary embodiment of the present disclosure;

[0026] Figure 8A and Figure 8B is a view illustrating a cross-sectional structure of a display panel according to a third exemplary embodiment of the present disclosure;

[0027] Figure 9 is a view illustrating a pixel structure of a display device according to a fourth exemplary embodiment of the present disclosure;

[0028] Figure 10A and Figure 10B is a view illustrating a cross-sectional structure of a display panel according to a fourth exemplary embodiment of the present disclosure. Detailed Description of the Embodiments

[0029] The advantages and features of the present disclosure and the methods for achieving these advantages and features will become clear by referring to the exemplary embodiments described in detail below together with the accompanying Figure 1 drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present invention and the scope of the present disclosure.

[0030] The shapes, sizes, ratios, angles, quantities, etc. shown in the drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. The same reference numerals generally denote the same elements throughout the application. In addition, in the following description of the present disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "including", "having", and "consisting of" used herein are generally intended to allow the addition of other components, unless these terms are used with the term "only". Any singular reference may include the plural form unless otherwise clearly stated.

[0031] Even if not explicitly stated, components are still interpreted as including the usual error ranges.

[0032] When terms such as "on", "above", "below", and "after" are used to describe the positional relationship between two parts, one or more parts may be provided between the two parts, unless the terms use the terms "immediately" or "directly".

[0033] When an element or layer is provided "on" another element or layer, the one element or layer may be directly provided on the other element or layer or other elements or other layers may be interposed therebetween.

[0034] Although terms such as "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from other components. Thus, within the technical concept of the present disclosure, the first component mentioned below may be the second component.

[0035] Throughout the application, the same reference numerals generally denote the same elements.

[0036] For the convenience of description, the dimensions and thicknesses of each component shown in the drawings are shown, and the present disclosure is not limited to the dimensions and thicknesses of the components shown in the drawings.

[0037] The features of the embodiments of the present disclosure may be partially or wholly combined or incorporated with each other, and can be interrelated and operated in various technical manners, and each embodiment can be implemented independently of each other or implemented in association with each other.

[0038] Hereinafter, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 is a block diagram of a display device according to an exemplary embodiment of the present disclosure.

[0040] Referring to Figure 1 , a display device 100 according to an exemplary embodiment of the present disclosure may include a display panel 110, an image processor 151, a timing controller 152, a data driver 153, and a gate driver 154.

[0041] The image processor 151 may output a data signal DATA and a data enable signal DE by a data signal DATA provided from the outside.

[0042] In addition to the data enable signal DE, the image processor 151 may also output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal.

[0043] The timing controller 152 may be provided with a data signal DATA from the image processor 151 and driving signals including a data enable signal DE or a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 152 may output a gate timing control signal GDC for controlling the operation timing of the gate driver 154 and a data timing control signal DDC for controlling the operation timing of the data driver 153 based on the driving signals.

[0044] In addition, the data driver 153 samples and latches the data signal DATA provided from the timing controller 152 in response to the data timing control signal DDC provided from the timing controller 152 to convert the data signal into a gamma reference voltage and output the converted gamma reference voltage. The data driver 153 may output the data signal DATA through data lines DL1 to DLn.

[0045] In addition, the gate driver 154 may output a gate signal while converting the level of the gate voltage in response to the gate timing control signal GDC provided from the timing controller 152. The gate driver 154 may output the gate signal through gate lines GL1 to GLm.

[0046] While the sub-pixel P emits light in response to the data signal DATA and the gate signal provided from the data driver 153 and the gate driver 154, the display panel 110 may display an image. Details of the sub-pixel P will be described with reference to Figure 2 and Figure 5 the detailed structure of the sub-pixel P will be described.

[0047] Figure 2 is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure.

[0048] Referring to Figure 2 , a sub-pixel of a display device according to an exemplary embodiment of the present disclosure may include a switching transistor ST, a driving transistor DT, a compensation circuit 135, and a light-emitting diode 120.

[0049] The light-emitting diode 120 may emit light according to a driving current formed by the driving transistor DT.

[0050] The switching transistor ST may perform a switching operation in response to a gate signal provided through the gate line GL, so that the data signal provided through the data line DL is stored as a data voltage in a capacitor.

[0051] In addition, the driving transistor DT may operate in response to the data voltage stored in the capacitor to allow a predetermined driving current to flow between the high-potential power supply line VDD and the low-potential power supply line GND.

[0052] The compensation circuit 135 is a circuit for compensating the threshold voltage of the driving transistor DT, and may include one or more thin film transistors and capacitors. The configuration of the compensation circuit 135 may vary according to the compensation method.

[0053] Figure 2 The sub-pixel shown in is composed of a 2T (transistor) 1C (capacitor) structure including a switching transistor ST, a driving transistor DT, a capacitor, and a light emitting diode 120. When the compensation circuit 135 is added, the sub-pixel can be formed in various forms such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, and 7T2C.

[0054] Figure 3 is a diagram showing the pixel structure of a display device according to a first exemplary embodiment of the present disclosure.

[0055] Figure 4 is a diagram showing the cross-sectional structure of a display panel according to a first exemplary embodiment of the present disclosure.

[0056] Figure 5 is a diagram showing a light emitting image according to a first exemplary embodiment of the present disclosure.

[0057] Figure 3 illustrates a portion of the display panel provided with six sub-pixels SP1, SP2, SP3, and illustrates a bank 116 including a second opening area OA2 as a main light emitting area, a first opening area OA1 including a main light emitting area and a reflected light emitting area, and a recrystallization layer 125.

[0058] Figure 4 illustrates along Figure 3 the cross-sectional structure of the first sub-pixel SP1 of I-I'.

[0059] Although components above the light emitting diode are not shown for convenience in Figure 4 , the present disclosure is not limited thereto, and the present disclosure may include a packaging layer and a touch sensor above the light emitting diode 120.

[0060] Figure 5 illustrates Figure 4 a part of the cross-sectional structure of the first sub-pixel SP1 shown in and the corresponding light emitting pattern.

[0061] Referring to Figure 3 , the display panel according to the first exemplary embodiment of the present disclosure may include a pixel area provided with a plurality of sub-pixels SP1, SP2, SP3 and a wiring area provided with various signal lines.

[0062] A plurality of first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3 may be provided in the pixel region.

[0063] For example, the first sub-pixel SP1 may be a red sub-pixel.

[0064] For example, the second sub-pixel SP2 may be a green sub-pixel.

[0065] For example, the third sub-pixel SP3 may be a blue sub-pixel.

[0066] For example, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may have a circular shape or a polygonal shape, but are not limited thereto. Here, the shapes of the sub-pixels SP1, SP2, and SP3 are defined by the planar shape of the anode electrode 121, but the present disclosure is not limited thereto.

[0067] In Figure 3 , it is illustrated that one first sub-pixel SP1, one second sub-pixel SP2, and one third sub-pixel SP3 are aggregated together to form a pixel, but are not limited thereto.

[0068] In addition, according to the disclosure, due to the side mirror (SM) structure of the anode electrode 121, a reflective light-emitting region is added in addition to the main light-emitting region, so that the light-emitting region can be enlarged compared to the respective sub-pixels SP1, SP2, and SP3.

[0069] According to the first exemplary embodiment of the present disclosure, a recrystallization layer 125 is formed above the bank 116 covering the anode electrode 121 having a side mirror structure to absorb or block the outgas of the bank 116 or the planarization layers 115a, 115b, and 115c. In this way, the reliability of the display device can be improved. For example, the bank 116 is formed after the anode electrode 121 is formed, and at this time, outgas that affects the reliability may be generated from the bank 116. The anode electrode 121 can reduce the outgas generated in the planarization layers 115a, 115b, and 115c to a certain extent. However, in the case of a metal layer, there will be a plurality of pinholes, making it difficult to completely block the outgas. Therefore, a recrystallization layer 125 is formed above the bank 116 to significantly reduce the outgas generated in the bank 116 or the planarization layers 115a, 115b, and 115c. However, although an example of forming the recrystallization layer 125 in the first sub-pixel SP1 is shown in Figure 3 , it is not limited thereto. Therefore, the recrystallization layer 125 may be formed in all of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3, or the recrystallization layer 125 may be formed in some of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3.

[0070] Specifically, referring to Figure 4 and Figure 5 , a driving transistor DT, a switching transistor ST, and a light-emitting diode 120 can be disposed above the substrates 110a, 110b, and 110c.

[0071] For example, the substrates 110a, 110b, and 110c may include a first substrate 110a, a second substrate 110b, and an interlayer insulating film 110c. The interlayer insulating film 110c may be disposed between the first substrate 110a and the second substrate 110b. However, the present disclosure is not limited thereto, and a single-layer substrate may be provided, or the interlayer insulating film may not be provided between the first substrate 110a and the second substrate 110b.

[0072] As described above, the substrates 110a, 110b, and 110c may include the first substrate 110a, the second substrate 110b, and the interlayer insulating film 110c to inhibit the penetration of moisture. For example, the first substrate 110a and the second substrate 110b may be polyimide (PI) substrates.

[0073] Transistors such as the driving transistor DT or the switching transistor ST can be disposed above the substrates 110a, 110b, and 110c.

[0074] A multiple buffer layer 111a is disposed on the second substrate 110b, and an active buffer layer 111b can be disposed on the multiple buffer layer 111a. However, the present disclosure is not limited thereto, and a single-layer buffer layer may be provided or no buffer layer may be provided.

[0075] A first light-shielding layer 135a can be disposed above the second substrate 110b. However, it is not limited thereto, and the first light-shielding layer 135a can be disposed on the multiple buffer layer 111a.

[0076] The first light-shielding layer 135a can function as a light shield.

[0077] The multiple buffer layer 111a can be disposed on the first light-shielding layer 135a.

[0078] The active buffer layer 111b can be disposed on the multiple buffer layer 111a.

[0079] A first active layer 134a of the driving transistor DT can be disposed above the active buffer layer 111b.

[0080] A first gate insulating film 112a can be disposed on the first active layer 134a.

[0081] In addition, a first gate electrode 131a of the driving transistor DT can be disposed on the first gate insulating film 112a.

[0082] In addition, for example, the gate material layer 136a may be provided on the first gate insulating film 112a at a position different from the formation position of the driving transistor DT. For example, the gate material layer 136a may be the first storage electrode, but is not limited thereto.

[0083] The first interlayer insulating film 113a may be provided on the first gate electrode 131a.

[0084] The metal layer 136b may be provided on the first interlayer insulating film 113a. For example, the metal layer 136b may be the second storage electrode, but is not limited thereto.

[0085] In this case, the metal layer 136b and the gate material layer 136a may form a storage capacitor together, but are not limited thereto.

[0086] In addition, for example, the second light-shielding layer 135b may be provided on the first interlayer insulating film 113a at a position different from the formation position of the metal layer 136b.

[0087] The buffer layer 111c may be provided on the metal layer 136b and the second light-shielding layer 135b.

[0088] The second active layer 134b of the switching transistor ST may be provided on the buffer layer 111c.

[0089] The second gate insulating film 112b may be provided on the second active layer 134b.

[0090] In addition, the second gate electrode 131b of the switching transistor ST may be provided on the second gate insulating film 112b.

[0091] The second interlayer insulating film 113b may be provided on the second gate electrode 131b.

[0092] The first source electrode 132a and the first drain electrode 133a of the driving transistor DT may be provided on the second interlayer insulating film 113b. In addition, the second source electrode 132b and the second drain electrode 133b of the switching transistor ST may be provided on the second interlayer insulating film 113b.

[0093] For example, the first source electrode 132a and the first drain electrode 133a may be electrically connected to one side and the other side of the first active layer 134a through contact holes provided in the second interlayer insulating layer 113b, the second gate insulating film 112b, the buffer layer 111c, the first interlayer insulating film 113a, and the first gate insulating film 112a, respectively.

[0094] In addition, for example, a part of the first drain electrode 133a may be electrically connected to one side of the first light-shielding layer 135a through contact holes provided in the second interlayer insulating layer 113b, the second gate insulating film 112b, the buffer layer 111c, the first interlayer insulating layer 113a, the first gate insulating film 112a, the active buffer layer 111b, and the multiple buffer layer 111a.

[0095] In addition, for example, the second source electrode 132b and the second drain electrode 133b may be electrically connected to one side and the other side of the second active layer 134b respectively through contact holes provided in the second interlayer insulating layer 113b and the second gate insulating film 112b.

[0096] The portion of the first active layer 134a that overlaps with the first gate electrode 131a is the channel region. For example, one of the first source electrode 132a and the first drain electrode 133a is connected to one side of the channel region in the first active layer 134a, and the other may be connected to the other side of the channel region in the first active layer 134a.

[0097] In addition, the portion of the second active layer 134b that overlaps with the second gate electrode 131b is the channel region. For example, one of the second source electrode 132b and the second drain electrode 133b is connected to one side of the channel region in the second active layer 134b, and the other may be connected to the other side of the channel region in the second active layer 134b.

[0098] Although not shown, a passivation film is provided on the first source electrode 132a and the first drain electrode 133a, and the second source electrode 132b and the second drain electrode 133b.

[0099] Planarization layers 115a, 115b may be provided above the first source electrode 132a and the first drain electrode 133a, and the second source electrode 132b and the second drain electrode 133b. For example, the planarization layers 115a, 115b may include a first planarization layer 115a and a second planarization layer 115b.

[0100] The first planarization layer 115a may be provided on the passivation film.

[0101] A connection electrode 137 may be provided on the first planarization layer 115a.

[0102] For example, the connection electrode 137 may be electrically connected to one of the first source electrode 132a and the first drain electrode 133a through a contact hole provided in the first planarization layer 115a.

[0103] The second planarization layer 115b may be provided on the connection electrode 137.

[0104] A third planarization layer 115c may be disposed on the second planarization layer 115b.

[0105] The third planarization layer 115c may be composed of an organic material such as an acrylic-based resin or an epoxy-based resin. For example, it may be composed of optical acrylic (PAC). The first planarization layer 115a, the second planarization layer 115b, and the third planarization layer 115c may be referred to as an overcoat layer.

[0106] For example, the third planarization layer 115c may include a first opening region OA1 obtained by removing (opening) portions corresponding to the main light-emitting region EA1, the reflective light-emitting region EA2, and the non-light-emitting region NEA of the sub-pixels.

[0107] In a plan view, the first opening region OA1 may have a substantially (or overall) rectangular shape, but is not limited thereto. For example, the first opening region OA1 of the present disclosure may have a circular shape, an oval shape, or a polygonal shape.

[0108] The third planarization layer 115c may include a top surface and sides.

[0109] The top surface of the third planarization layer 115c is the surface located at the top of the third planarization layer 115c and is substantially parallel to the second substrate 110b.

[0110] In addition, the sides of the third planarization layer 115c are the surfaces extending from the top surface of the third planarization layer 115c to the sides. For example, the sides of the third planarization layer 115c may have a predetermined taper angle. For example, the sides of the third planarization layer 115c may have a taper angle of 30° to 65°, but are not limited thereto.

[0111] In a plan view, like the edge of the first opening region OA1, the sides of the third planarization layer 115c may have a rectangular shape, but are not limited thereto. The sides of the third planarization layer 115c of the present disclosure may have a circular shape, an oval shape, or a polygonal shape.

[0112] For example, the anode electrode 121 may be disposed on the top surface and sides of the third planarization layer 115c and the top surface of the second planarization layer 115b. For example, the anode electrode 121 may be disposed in the first opening region OA1 and on the top surface and sides of the third planarization layer 115c.

[0113] In addition, for example, the anode electrode 121 disposed in the first opening region OA1 may be in contact with the top surface of the second planarization layer 115b.

[0114] In addition, for example, the anode electrode 121 may include: a first region 121a having a surface substantially parallel to the surface of the second substrate 110b in the first opening region OA1; and a second region 121b extending from the first region 121a such that the surface has a predetermined angle with respect to the second substrate 110b. In addition, for example, the first region 121a of the anode electrode 121 may correspond to the first opening region OA1. For example, the second region 121b of the anode electrode 121 may correspond to the side portion of the third planarization layer 115c. Therefore, the second region 121b of the anode electrode 121 may be referred to as the side portion of the anode electrode 121.

[0115] In the present disclosure, the second region 121b of the anode electrode 121 is a portion having a side mirror shape and constitutes an SM structure. The SM structure may have a mirror structure capable of performing side light reflection by forming the anode electrode 121 after forming the third planarization layer 115c. In the SM structure, a light reflection layer that causes light reflection from the light-emitting diode 120 is formed on the side portion of the third planarization layer 115c, that is, the second region 121b of the anode electrode 121, to re-reflect the light directed to the second region 121b of the anode electrode 121. In this way, the front brightness can be improved. This structure is applied in the same manner according to the viewing angle, so that the luminance-viewing angle (LvA) characteristics based on the viewing angle can be improved.

[0116] The SM structure of the anode electrode 121 may be disposed in the first opening region OA1. The SM structure of the anode electrode 121 may form a reflective light-emitting region EA2. The reflective light-emitting region EA2 is in the form of following the contour line of the main light-emitting region EA1. For example, it may have an uninterrupted rectangular frame shape or a discontinuous rectangular frame shape. In the case of having a discontinuous rectangular frame shape, the reflective light-emitting region may surround the contour line of the main light-emitting region EA1 and have a discontinuity in the middle. However, the present disclosure is not limited to the shape of the reflective light-emitting region EA2.

[0117] As described above, the SM structure disposed in the first opening region OA1 forms a reflective light-emitting region EA2. A part of the light emitted by the light-emitting diode 120 is reflected from the second region 121b of the anode electrode 121 through the SM structure, thereby forming a reflective light-emitting region EA2 having a rectangular frame shape. Therefore, the light-emitting efficiency can be improved.

[0118] For example, according to the first exemplary embodiment of the present disclosure, in a plan view, the main light-emitting region EA1 may have a substantially rectangular shape, and the non-light-emitting region NEA may have a substantially rectangular frame shape surrounding the main light-emitting region EA1. The reflective light-emitting region EA2 may have a substantially rectangular frame shape surrounding the main light-emitting region EA1 and the non-light-emitting region NEA. In addition, the reflective light-emitting region EA2 may be surrounded by a first non-light-emitting region NEA1 between the sub-pixels SP1, SP3, SP3.

[0119] In addition, referring to Figure 4 and Figure 5 , the anode electrode 121 may further include a third region 121c extending from the second region 121b such that the surface is substantially parallel to the surface of the second substrate 110b. The third region 121c may correspond to the top surface of the third planarization layer 115c.

[0120] As described above, in one sub-pixel, the second planarization layer 115b and the third planarization layer 115c may include at least one contact hole separated from the first opening region OA1. Therefore, the driving transistor DT and the anode electrode 121 of the light emitting diode 120 may be electrically connected through the contact hole.

[0121] A bank 116 may be provided to cover the anode electrode 121.

[0122] The bank 116 may cover the second region 121b and the third region 121c of the anode electrode 121. In addition, the bank 116 may cover a part of the first region 121a of the anode electrode 121. For example, the bank 116 may cover a part of the edge of the first region 121a of the anode electrode 121.

[0123] A part of the bank 116 corresponding to the light emitting region of the sub-pixel may be opened.

[0124] For example, the bank 116 may include a second opening region OA2 obtained by removing (opening) a part corresponding to the main light emitting region EA1 of each sub-pixel.

[0125] The first opening region OA1 may have a width larger than the width of the second opening region OA2. For example, in a plan view, the second opening region OA2 may have a rectangular shape, but is not limited thereto, and may have a circular shape, an elliptical shape, or a polygonal shape.

[0126] Meanwhile, the main light emitting region EA1 may have a shape corresponding to the shape of the second opening region OA2. When the shape of any component corresponds to the shape of another component, it may mean that the shape of any component has the same shape as another component, or has the same shape but different dimensions, or the shape of any component is formed by transcribing (transferring) the shape of another component by any method. Therefore, the shape of the main light emitting region EA1 may be substantially understood to be obtained by transcribing the shape of the second opening region OA2 using the light emitted from the organic layer 122 located in the second opening region OA2.

[0127] In addition, the reflective light emitting region EA2 does not overlap with the main light emitting region EA1 and may be positioned around the main light emitting region EA1.

[0128] In addition, the reflective light-emitting region EA2 may be a closed curve surrounding the main light-emitting region EA1. Alternatively, the reflective light-emitting region EA2 may have a shape in which a part of the closed curve is interrupted.

[0129] The sub-pixels may be distinguished according to the main light-emitting region EA1.

[0130] Next, the bank 116 includes a top surface, side portions, and a bottom surface portion.

[0131] For example, the top surface of the bank 116 may be a surface located at the top of the bank 116 and be substantially parallel to the second substrate 110b. In addition, the top surface of the bank 116 may correspond to the top surface of the third planarization layer 115c.

[0132] The side portions of the bank 116 may be surfaces extending from the top surface of the bank 116 to the sides. For example, the side portions of the bank 116 may have a predetermined taper angle. For example, the side portions of the bank 116 may have a taper angle of 30° to 65°, but are not limited thereto. The side portions of the bank 116 may correspond to the side portions of the third planarization layer 115c.

[0133] For example, the bottom surface portion of the bank 116 may correspond to the surface in contact with the anode electrode 121 in the first region 121a of the anode electrode 121. The bottom surface portion of the bank 116 may correspond to the non-light-emitting region NEA between the main light-emitting region EA1 and the reflective light-emitting region EA2.

[0134] The first opening region OA1 provided in the third planarization layer 115c may have a width larger than the width of the second opening region OA2 provided in the bank 116. Accordingly, the second opening region OA2 may be located within the first opening region OA1.

[0135] For example, a part of the anode electrode 121 may be exposed through the second opening region OA2.

[0136] The bank 116 may be formed of a polyimide (PI)-based material, but is not limited thereto.

[0137] Similar to the edge of the second opening region OA2, the side portions of the bank 116 may have a rectangular shape, but the present disclosure is not limited thereto. For example, the side portions of the bank 116 according to the present disclosure may have a circular shape, an elliptical shape, or a polygonal shape.

[0138] Meanwhile, according to the first exemplary embodiment of the present disclosure, a recrystallization layer 125 may be provided above the bank 116. For example, the recrystallization layer 125 may be provided on the top surface and side portions of the bank 116 and a part of the top surface of the exposed anode electrode 121.

[0139] Here, the recrystallization layer 125 contains a fluoro-group to have hydrophobicity and a low surface energy, thereby suppressing the permeation of oxygen O2 or moisture H2O. In addition, due to its high polarity, it can act as a trap site for polar substances or charges in the exhaust gas components. Therefore, the reliability characteristics can be improved.

[0140] For example, the recrystallization layer 125 can be formed by a deposition process or a solution process such as sputtering.

[0141] For example, the recrystallization layer 125 can be composed of a fluoroacrylate-based organic compound and have the structure of Formula 1 below.

[0142] [Formula 1]

[0143]

[0144] The recrystallization layer 125 can be composed of a polychlorotrifluoroethylene (PCTFE)-based organic compound and have the structure of Formula 2 below.

[0145] [Formula 2]

[0146]

[0147] The recrystallization layer 125 can be composed of a polytetrafluoroethyelene (PTFE)-based organic compound and have the structure of Formula 3 below.

[0148] [Formula 3]

[0149]

[0150] The recrystallization layer 125 can be composed of a perfluorodecyltrichlorosilane (FDTS)-based organic compound and have the structure of Formula 4 below.

[0151] [Formula 4]

[0152]

[0153] The recrystallization layer 125 can be composed of a polyvinyliden fluoride (PVDF)-based organic compound and have the structure of Formula 5 below.

[0154] [Formula 5]

[0155]

[0156] The recrystallization layer 125 described above is a polymer organic film having fewer pinholes than the inorganic film, so that in the SM structure, exhaust gas can be removed more effectively than the second region 121b of the anode electrode 121.

[0157] According to the chemical structure of the material of the recrystallization layer 125, CF3-groups are formed based on C-F bonds, so that the surface has hydrophobic / polar characteristics. By absorbing moisture (H2O) and N-methyl-2-pyrrolidone (NMP) which are exhaust gas components generated during the reliability evaluation process or inhibiting their penetration, the influence on the light-emitting diode 120 can be reduced.

[0158] The fluoroacrylate-based material as the recrystallization layer 125 can be applied in a liquid state at room temperature to a room temperature / atmospheric pressure coating process and has excellent solution volatility, which makes it easy to form a solid layer and no additional heat treatment for thinning is required after coating. In addition, the fluoroacrylate solution has the advantages of low reactivity with organic materials, wide solvent selectivity, and small process application limitations. In addition, since the glass transition temperature (Tg) is as low as ~100 °C, the thermal influence on other layers can be minimized during further heat treatment processes, and the glass transition temperature can be controlled by controlling the component ratio or structure during the synthesis process. In addition, the fluoroacrylate-based material as an organic material has fewer pinholes than the metal layer as an inorganic material and is composed of CF3-groups to effectively absorb or block exhaust gas, thereby improving reliability.

[0159] The recrystallization layer 125 can be patterned to be provided only around each sub-pixel.

[0160] As described above, although Figure 3 an example of forming the recrystallization layer 125 in the first sub-pixel SP1 is shown, it is not limited thereto. Therefore, the recrystallization layer 125 can be formed in all of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3, or the recrystallization layer 125 can be formed only in some of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3.

[0161] In addition, the organic layer 122 can be provided in the second opening region OA2 of the bank 116 (except for the portion where the recrystallization layer 125 is provided). For example, the organic layer 122 can be provided on the top surface of the anode electrode 121 exposed through the second opening region OA2 of the bank 116. For example, the recrystallization layer 125 can be provided around the organic layer 122.

[0162] The organic layer 122 can be provided only in the second opening region OA2, but the present disclosure is not limited thereto, and a part of the organic layer 122 can also be provided on the top surface and side portions of the recrystallization layer 125 outside the second opening region OA2.

[0163] A cathode electrode 123 can be provided on the organic layer 122 and the recrystallization layer 125.

[0164] As described above, the light-emitting diode 120 can be composed of an anode electrode 121, an organic layer 122, and a cathode electrode 123.

[0165] For example, the main light-emitting region EA1 can be formed by the light-emitting diode 120 provided in the second opening region OA2.

[0166] A packaging layer can be provided above the above-described light-emitting diode 120.

[0167] At this time, the packaging layer can have a single-layer structure or a multi-layer structure. For example, the packaging layer can include a first packaging layer, a second packaging layer, and a third packaging layer.

[0168] For example, the first packaging layer and the third packaging layer are made of an inorganic layer and the second packaging layer can be made of an organic layer. For example, among the first packaging layer, the second packaging layer, and the third packaging layer, the second packaging layer is the thickest so that the second packaging layer functions as a planarization layer.

[0169] The first packaging layer can be formed of an inorganic insulating material that can be deposited at a low temperature. For example, it can be composed of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

[0170] The second packaging layer can be formed to have an area smaller than that of the first packaging layer. In this case, the second packaging layer can be formed to expose both ends of the first packaging layer.

[0171] In addition, for example, the second packaging layer can be composed of an organic insulating material such as an acrylic resin, an epoxy resin, a polyimide, a polyethylene, or silicon oxycarbide (SiOC). In addition, for example, the second packaging layer can be formed by an inkjet method, but is not limited thereto.

[0172] The third packaging layer can be formed to cover the top surface and the side surfaces of each of the second packaging layer and the first packaging layer.

[0173] For example, the third packaging layer can minimize or block the penetration of external moisture or oxygen into the first packaging layer and the second packaging layer. In addition, for example, the third packaging layer can be composed of an inorganic insulating material such as silicon oxide (SiOx), silicon oxynitride (SiON), aluminum oxide (Al2O3), or silicon nitride (SiNx).

[0174] A touch sensor layer and / or a color filter layer can be provided on the above-described packaging layer.

[0175] According to the present disclosure, the recrystallization layer is heat-treated at a low temperature to increase the surface roughness, thereby improving the front efficiency and color viewing angle according to the increase in light extraction, which will be described in detail with reference to the accompanying drawings.

[0176] Figure 6 is a diagram showing a cross-sectional structure of a display panel according to a second exemplary embodiment of the present disclosure.

[0177] Figure 6 The second exemplary embodiment of the present disclosure has substantially the same configuration as the above Figures 3 to 5 The first exemplary embodiment of the present disclosure, except that the recrystallization layer 225 is heat-treated at a low temperature to increase the surface roughness. Therefore, the repeated description will be omitted. The same configurations will be denoted by the same reference numerals. Here, the description of the same reference numerals can be referred to Figures 1 to 5 .

[0178] Figure 6 illustrates a part of a cross-section of a sub-pixel.

[0179] Although the structure above the light-emitting diode 120 is not shown for ease of description in Figure 6 , the present disclosure is not limited thereto, and the present disclosure may include a packaging layer and a touch sensor layer above the light-emitting diode 120.

[0180] Referring to Figure 6 , a driving transistor DT, a switching transistor ST, and a light-emitting diode 120 may be disposed above the substrates 110a, 110b, and 110c. The detailed description of the driving transistor DT, the switching transistor ST, and the light-emitting diode 120 can be referred to the above first exemplary embodiment.

[0181] A first planarization layer 115a and a second planarization layer 115b may be disposed above the driving transistor DT and the switching transistor ST.

[0182] In addition, a third planarization layer 115c may be disposed on the second planarization layer 115b.

[0183] For example, the third planarization layer 115c may include a first opening region OA1 obtained by removing (opening) portions corresponding to the main light-emitting region EA1, the reflected light-emitting region EA2, and the non-light-emitting region NEA of the sub-pixel.

[0184] The third planarization layer 115c may include a top surface and a side portion.

[0185] The top surface of the third planarization layer 115c may be a surface located at the top of the third planarization layer 115c and substantially parallel to the second substrate 110b.

[0186] In addition, the side portion of the third planarization layer 115c may be a surface extending from the top surface of the third planarization layer 115c toward the side surface.

[0187] For example, the anode electrode 121 may be disposed on the top surface and the side portion of the third planarization layer 115c and the top surface of the second planarization layer 115b. For example, the anode electrode 121 may be disposed in the first opening region OA1 and on the top surface and the side portion of the third planarization layer 115c.

[0188] In addition, for example, the anode electrode 121 disposed in the first opening region OA1 may be in contact with the top surface of the second planarization layer 115b.

[0189] In addition, for example, the anode electrode 121 may include: a first region 121a having a surface substantially parallel to the surface of the second substrate 110b in the first opening region OA1; and a second region 121b extending from the first region 121a such that the surface has a predetermined angle with respect to the second substrate 110b. In addition, for example, the first region 121a of the anode electrode 121 may correspond to the first opening region OA1. For example, the second region 121b of the anode electrode 121 may correspond to the side portion of the third planarization layer 115c.

[0190] As described above, in the present disclosure, the second region 121b of the anode electrode 121 constitutes an SM structure, and the SM structure of the anode electrode 121 may form a reflective light-emitting region EA2.

[0191] As described above, a part of the light emitted by the light-emitting diode 120 is reflected from the second region 121b of the anode electrode 121 through the SM structure, thereby additionally forming a reflective light-emitting region EA2. Therefore, the light-emitting efficiency can be improved.

[0192] In addition, referring to Figure 6 , the anode electrode 121 may further include a third region 121c extending from the second region 121b such that the surface is substantially parallel to the surface of the second substrate 110b. The third region 121c may correspond to the top surface of the third planarization layer 115c.

[0193] A bank 116 may be provided to cover the anode electrode 121.

[0194] The bank 116 may cover the entire second region 121b and the entire third region 121c of the anode electrode 121 and a part of the edge of the first region 121a.

[0195] For example, the bank 116 may include a second opening region OA2 obtained by removing (opening) a portion corresponding to the main light-emitting region EA1 of each sub-pixel.

[0196] The main light-emitting region EA1 may have a shape corresponding to the shape of the second opening region OA2. In addition, the reflective light-emitting region EA2 does not overlap with the main light-emitting region EA1 and may be positioned around the main light-emitting region EA1.

[0197] Sub-pixels may be distinguished according to the main light-emitting region EA1.

[0198] Next, the bank 116 may include a top surface, side portions, and a bottom surface portion.

[0199] For example, the top surface of the bank 116 may be a surface located at the top of the bank 116 and be substantially parallel to the second substrate 110b. In addition, the top surface of the bank 116 may correspond to the top surface of the third planarization layer 115c.

[0200] The side portions of the bank 116 may be surfaces extending from the top surface of the bank 116 toward the sides. The side portions of the bank 116 may have a predetermined taper angle.

[0201] For example, the bottom surface portion of the bank 116 may correspond to a surface in contact with the anode electrode 121 in the first region 121a of the anode electrode 121. The bottom surface portion of the bank 116 may correspond to the non-light-emitting region NEA between the main light-emitting region EA1 and the reflective light-emitting region EA2.

[0202] For example, a part of the anode electrode 121 may be exposed through the second opening region OA2.

[0203] Meanwhile, according to a second exemplary embodiment of the present disclosure, a recrystallization layer 225 may be provided above the bank 116. For example, the recrystallization layer 225 may be provided on the top surface and side portions of the bank 116 and a part of the top surface of the exposed anode electrode 121.

[0204] As described above, the recrystallization layer 225 contains a fluorine group to have hydrophobicity and a low surface energy, thereby suppressing the penetration of oxygen O2 or moisture H2O. In addition, due to its high polarity, it may act as a trap for polar substances or charges in the outgassing components. Therefore, reliability characteristics may be improved.

[0205] For example, the recrystallization layer 225 may be formed by a deposition process or a solution process such as sputtering.

[0206] As described above, the recrystallization layer 225 may be composed of a fluoroacrylate-based organic compound, a PCTFE-based organic compound, a PTFE-based organic compound, an FDTS-based organic compound, or a PVDF-based organic compound.

[0207] The recrystallization layer 225 may be patterned to be provided only around each sub-pixel.

[0208] The recrystallization layer 225 may be formed in all of the first sub-pixels SP1, the second sub-pixels SP2, and the third sub-pixels SP3, or may be formed only in some of the first sub-pixels SP1, the second sub-pixels SP2, and the third sub-pixels SP3.

[0209] According to a second exemplary embodiment of the present disclosure, the recrystallization layer 225 is subjected to low-temperature heat treatment to increase the surface roughness. For example, when low-temperature heat treatment is applied to the recrystallization layer 225, intermolecular aggregation is caused, thereby increasing the surface roughness. When the surface roughness increases as described above, the optical path is scattered to improve light extraction. That is, according to the first exemplary embodiment described above, the light reflected from the second region 121b on the side surface of the SM structure is absorbed or trapped by the bank 116 or is totally reflected due to the difference in refractive index between the bank 116 and the recrystallization layer 125, which results in light loss. In contrast, according to the second exemplary embodiment, a structure 225a is formed on the surface of the recrystallization layer 225 on the side surface of the SM structure to significantly increase the surface roughness, so that the optical path is scattered to improve light extraction. Therefore, compared with the first exemplary embodiment, the front brightness (efficiency) and the side brightness (brightness viewing angle) can be further improved. For example, when the recrystallization layer of the present disclosure is applied to all of the red sub-pixels SP1, the green sub-pixels SP2, and the blue sub-pixels SP3, it is found that the brightness increases by a predetermined ratio without change in the color coordinates of each color. For example, it is found that the brightness increases by about 5% compared with the display device before application, but the LvA characteristics are at the same level. Therefore, when the present disclosure is selectively applied to each color, that is, each of the red sub-pixels SP1, the green sub-pixels SP2, and the blue sub-pixels SP3, the degree of brightness improvement and the visual characteristic can be controlled. For example, when the present disclosure is applied to the red sub-pixels SP1, based on the white brightness, the brightness increases by about 1.1%, and the red visual characteristic can be ensured. When the present disclosure is applied to the green sub-pixels SP2, based on the white brightness, the brightness increases by about 3.5%, and the green visual characteristic can be ensured. In addition, when the present disclosure is applied to the blue sub-pixels SP3, based on the white brightness, the brightness increases by about 0.4%, and the blue visual characteristic can be ensured.

[0210] As described above, the material of the recrystallization layer 225 has a low glass transition temperature, so that the surface roughness of the recrystallization layer 225 can be controlled by low-temperature heat treatment. For example, when the surface roughness of the recrystallization layer 225 increases, the optical path can be randomly controlled according to the surface state to cause light scattering, which can maximize the light extraction effect.

[0211] In addition, the above material of the recrystallization layer 225 has a low glass transition temperature, so that the thermal influence on other layers can be minimized during a further heat treatment process.

[0212] In addition, when the surface roughness of the surface of the recrystallization layer 225 above the bank 116 increases, the lateral leakage current can be reduced, thereby improving the low gray level characteristics. In the related art, the lateral leakage current flows from the anode electrode of a specific sub-pixel to the anode electrode of an adjacent sub-pixel. In particular, it is very obvious between the red sub-pixel and the green sub-pixel and between the red sub-pixel and the blue sub-pixel where the conduction voltage difference is relatively high. Therefore, according to the second exemplary embodiment of the present disclosure, the recrystallization layer 225 is formed only above the bank 116 of the red sub-pixel SP1 for heat treatment, or only the recrystallization layer 225 above the bank 116 of the red sub-pixel SP1 is heat-treated. In this way, by increasing the movement path of the current flowing from the red sub-pixel SP1 to the green sub-pixel SP2 or the blue sub-pixel SP3, or the movement path of the current flowing from the green sub-pixel SP2 or the blue sub-pixel SP3 to the red sub-pixel SP1, the lateral leakage current can be reduced. In addition, the above material of the recrystallization layer 225 contains a fluorine group to act as a charge trap, which can further reduce the lateral leakage current.

[0213] In addition, the organic layer 122 can be provided in the second opening region OA2 of the bank 116 (except for the part where the recrystallization layer 225 is provided). For example, the organic layer 122 can be provided on the top surface of the anode electrode 121 exposed through the second opening region OA2 of the bank 116. For example, the recrystallization layer 225 can be provided around the organic layer 122.

[0214] The organic layer 122 can be provided only in the second opening region OA2, but the present disclosure is not limited thereto, and a part of the organic layer 122 can also be provided on the top surface and the side of the recrystallization layer 225 outside the second opening region OA2.

[0215] The cathode electrode 123 can be provided on the organic layer 122 and the recrystallization layer 225. The organic layer 122 and the cathode electrode 123 can have a surface shape based on the surface roughness of the recrystallization layer 225.

[0216] According to the present disclosure, the heat-treated recrystallization layer can be formed only on the top surface of the bank, or only the recrystallization layer on the top surface of the bank can be heat-treated. In addition, the heat-treated recrystallization layer can be formed only on the side of the bank, or only the recrystallization layer on the side of the bank can be heat-treated. This will be described in detail with reference to the drawings.

[0217] Figure 7It is a diagram showing the pixel structure of a display device according to a third exemplary embodiment of the present disclosure.

[0218] Figure 8A And Figure 8B It is a diagram showing the cross-sectional structure of a display panel according to a third exemplary embodiment of the present disclosure.

[0219] According to Figure 7 , Figure 8A And Figure 8B In the third exemplary embodiment of the present disclosure, a heat-treated recrystallized layer 325' may be formed only on the top surface of the bank 116, or the recrystallized layer 325" on the top surface of the bank 116 may be heat-treated, which is different from the first exemplary embodiment of Figures 3 to 5 And / or Figure 6 The second exemplary embodiment of Figures 1 to 6 . However, other configurations are substantially the same, so repeated descriptions will be omitted. The same configurations may be represented by the same reference numerals. Here, the descriptions of the same reference numerals may refer to

[0220] Figure 7 It illustrates a part of the display panel provided with six sub-pixels SP1, SP2, and SP3, and illustrates the bank 116 including the second opening region OA2 as the main light-emitting region, the first opening region OA1 including the main light-emitting region and the reflected light-emitting region, and the recrystallized layers 325', 325". In the plan view, the heat-treated regions of the recrystallized layers 325', 325" may at least partially overlap with the recrystallized layer region RCA or the second recrystallized layer region RCA2. For example, the heat-treated recrystallized layers 325', 325" may be formed not to overlap with the second opening region OA2 and the sides of the bank 116 (see Figure 8A And Figure 8B ).

[0221] Figure 8A And Figure 8B It illustrates a part of the cross-section of one sub-pixel taken along Figure 7 II-II' of Figure 8A And Figure 8B , although the components above the light-emitting diode 120 are not shown for convenience in

[0222] In addition, Figure 8A It illustrates an example in the third exemplary embodiment in which a heat-treated recrystallized layer 325' is formed only on the top surface of the bank 116. Figure 8BIllustrated is another example in which only the recrystallization layer 325” on the top surface of the bank 116 is heat-treated in the third exemplary embodiment.

[0223] Referring to Figure 7 , Figure 8A and Figure 8B , a driving transistor DT, a switching transistor ST, and a light-emitting diode 120 may be disposed above the substrates 110a, 110b, and 110c. A detailed description of the driving transistor DT, the switching transistor ST, and the light-emitting diode 120 may refer to the above-described first exemplary embodiment.

[0224] According to the third exemplary embodiment of the present disclosure, a recrystallization layer 325’, 325” may be disposed above the bank 116. For example, the recrystallization layer 325’ may be disposed only on the top surface of the bank 116 (see Figure 8A ), and the recrystallization layer 325” may be disposed on the top surface and side portions of the bank 116 and a part of the top surface of the exposed anode electrode 121 (see Figure 8B ). In the case of the exemplary embodiment of Figure 8A , in a plan view, the recrystallization layer 325’ may be disposed above the bank 116 except for a third opening region OA3 that overlaps with the second opening region OA2 and the side portions of the bank 116. For example, the recrystallization layer 325’ may have a recrystallization layer region RCA surrounding the third opening region OA3. In the case of the exemplary embodiment of Figure 8B , in a plan view, the recrystallization layer 325” has a first recrystallization layer region RCA1 surrounding the second opening region OA2 of the bank 116 and a heat-treated second recrystallization layer region RCA2 surrounding the first recrystallization layer region RCA1. For example, the first recrystallization layer region RCA1 corresponds to the side portions of the bank 116, and the second recrystallization layer region RCA2 may correspond to a part of the top surface of the bank 116.

[0225] As described above, the recrystallization layers 325’, 325” may be composed of a fluoroacrylate-based organic compound, a PCTFE-based organic compound, a PTFE-based organic compound, an FDTS-based organic compound, or a PVDF-based organic compound containing a fluorine group.

[0226] The recrystallization layers 325’, 325” may be patterned to be disposed only around each sub-pixel.

[0227] The recrystallization layers 325’, 325” may be formed in all of the first sub-pixels SP1, the second sub-pixels SP2, and the third sub-pixels SP3, or may be formed only in some of the first sub-pixels SP1, the second sub-pixels SP2, and the third sub-pixels SP3.

[0228] According to a third exemplary embodiment of the present disclosure, the recrystallization layers 325' and 325'' are heat-treated at a low temperature so that the surface roughness increases. For example, the heat treatment may be performed on the recrystallization layer 325' formed only on the top surface of the bank 116 (see Figure 8A ), or the heat treatment may be performed only on the recrystallization layer 325'' formed on the top surface of the bank 116 (see Figure 8B ). In this case, the structure 325a' may be formed on the surface of the recrystallization layer 325' formed only on the top surface of the bank 116 (see Figure 8A ), and the structure 325a'' may be formed only on the surface of the recrystallization layer 325'' formed on the top surface of the bank 116 (see Figure 8B ).

[0229] As in the third exemplary embodiment of the present disclosure, when the recrystallization layers 325' and 325'' having the structures 325a' and 325a'' are applied only to the top surface of the bank 116, it is more beneficial to control the lateral leakage current related to the low gray level characteristics compared to the improvement in brightness and color viewing angle. In this case, the recrystallization layer does not have to be applied to all of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, but may be selectively applied only to the first sub-pixel SP1, which is a red sub-pixel, having a relatively high leakage current.

[0230] Figure 9 is a diagram illustrating a pixel structure of a display device according to a fourth exemplary embodiment of the present disclosure.

[0231] Figure 10A and Figure 10B are diagrams illustrating a cross-sectional structure of a display panel according to a fourth exemplary embodiment of the present disclosure.

[0232] According to Figure 9 , Figure 10A and Figure 10B of the fourth exemplary embodiment of the present disclosure, the heat-treated recrystallization layer 425' may be formed only on the side portion of the bank 116, or the heat treatment may be performed only on the recrystallization layer 425'' on the side portion of the bank 116, which is different from the first exemplary embodiment of Figures 3 to 5 and / or Figure 6 of the second exemplary embodiment. However, other configurations are substantially the same, and thus the repeated description will be omitted. The same configurations may be denoted by the same reference numerals. Here, the description of the same reference numerals may be referred to Figures 1 to 6 .

[0233] Figure 9Illustrated is a portion of a display panel provided with six sub-pixels SP1, SP2, SP3, and illustrated are a bank 116 including a second opening area OA2 as a main light-emitting area, a first opening area OA1 including a main light-emitting area and a reflective light-emitting area, and recrystallization layers 425', 425".

[0234] Figure 10A and Figure 10B Illustrated is a part of a cross-section of a sub-pixel taken along Figure 9 III-III'. Although components above the light-emitting diode 120 are not shown for convenience in Figure 10A and Figure 10B , the present disclosure is not limited thereto, and the present disclosure may include a packaging layer, a touch sensor layer, and a color filter layer above the light-emitting diode 120.

[0235] In addition, Figure 10A Illustrated is an example of the fourth exemplary embodiment in which a heat-treated recrystallization layer 425' is formed only on the side portions of the bank 116. Figure 10B Illustrated is another example of the fourth exemplary embodiment in which only the recrystallization layer 425" on the side portions of the bank 116 is heat-treated. In this case, in a plan view, the heat-treated areas of the recrystallization layers 425', 425" may overlap with the non-light-emitting area NEA and the reflective light-emitting area EA2 and may have a border band shape surrounding the main light-emitting area EA1 of each sub-pixel SP1, SP2, SP3.

[0236] Referring to Figure 9 , Figure 10A and Figure 10B , a driving transistor DT, a switching transistor ST, and a light-emitting diode 120 may be provided above substrates 110a, 110b, 110c. A detailed description of the driving transistor DT, the switching transistor ST, and the light-emitting diode 120 may refer to the first exemplary embodiment described above.

[0237] According to the fourth exemplary embodiment of the present disclosure, recrystallization layers 425', 425" may be provided above the bank 116. For example, the recrystallization layer 425' may be provided only on the side portions of the bank 116 (see Figure 10A ), and the recrystallization layer 425" may be provided on the top surface and side portions of the bank 116 and a part of the top surface of the exposed anode electrode 121 (see Figure 10B ). In Figure 10BIn the case of the exemplary embodiment, in a plan view, the recrystallization layer 425” may have a heat-treated first recrystallization layer region RCA1 surrounding the second opening region OA2 of the bank 116 and a second recrystallization layer region RCA2 surrounding the heat-treated first recrystallization layer region RCA1. For example, the first recrystallization layer region RCA1 may correspond to the side portion of the bank 116, and the second recrystallization layer region RCA2 may correspond to a part of the top surface of the bank 116.

[0238] As described above, the recrystallization layers 425’, 425” may be composed of a fluoroacrylate-based organic compound containing a fluorine group, a PCTFE-based organic compound, a PTFE-based organic compound, an FDTS-based organic compound, or a PVDF-based organic compound.

[0239] The recrystallization layers 425’, 425” may be patterned to be provided only around each sub-pixel.

[0240] The recrystallization layers 425’, 425” may be formed in all of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3, or may be formed only in some of the first sub-pixels SP1, second sub-pixels SP2, and third sub-pixels SP3.

[0241] According to the fourth exemplary embodiment of the present disclosure, the recrystallization layers 425’, 425” are heat-treated at a low temperature so that the surface roughness increases. For example, the recrystallization layer 425’ formed only on the side portion of the bank 116 may be heat-treated (see Figure 10A ), and the recrystallization layer 425” formed only on the side portion of the bank 116 may be heat-treated (see Figure 10B ). In this case, the structure 425a’ may be formed on the surface of the recrystallization layer 425’ formed only on the side portion of the bank 116 (see Figure 10A ), and the structure 425a” may be formed only on the surface of the recrystallization layer 425” formed on the side portion of the bank 116 (see Figure 10B ).

[0242] As in the fourth exemplary embodiment of the present disclosure, when the recrystallization layers 425’, 425” having the structures 425a’, 425a” are applied only to the side portion of the bank 116, it is more beneficial to improve the brightness and color viewing angle compared to the lateral leakage current related to the low gray level characteristics. When the deterioration of the low gray level characteristics due to the leakage current is not serious, the effect of increasing the charge transport path through the surface roughness is excluded, and only the charge trapping effect caused by the recrystallization layer material (CF3-group) is achieved to reduce the leakage current.

[0243] The exemplary embodiments of the present disclosure may also be described as follows:

[0244] According to one aspect of the present disclosure, a display device is provided. The display device includes: a substrate including a plurality of sub-pixels; a planarization layer disposed above the substrate and having a first opening area; an anode electrode disposed in the first opening area and on a side portion of the planarization layer adjacent to the first opening area; a bank exposing a part of the anode electrode and having a second opening area corresponding to the first opening area; a recrystallization layer disposed on the bank and containing a fluorine group; an organic layer disposed on the anode electrode exposed through the second opening area; and a cathode electrode disposed on the organic layer and the recrystallization layer.

[0245] The first opening area may have a width larger than that of the second opening area.

[0246] A part of the anode electrode may extend from the side portion of the planarization layer to the top surface of the planarization layer.

[0247] The anode electrode may have a side portion corresponding to the side portion of the planarization layer.

[0248] The anode electrode, the organic layer, and the cathode electrode may form a light-emitting diode. The light-emitting diode may form a main light-emitting area. The side portion of the anode electrode may form a reflective light-emitting area. The reflective light-emitting area may be formed around the main light-emitting area, and a non-light-emitting area may be formed between the main light-emitting area and the reflective light-emitting area.

[0249] The recrystallization layer may be disposed in all sub-pixels.

[0250] The recrystallization layer may be disposed in some sub-pixels.

[0251] The recrystallization layer may be disposed on the top surface and side portion of the bank and on a part of the top surface of the exposed anode electrode.

[0252] The recrystallization layer may be composed of a poly(chlorotrifluoroethylene) (PCTFE)-based organic compound, a polytetrafluoroethylene (PTFE)-based organic compound, a perfluorodecyltrichlorosilane (FDTS)-based organic compound, a poly(vinylidene fluoride) (PVDF)-based organic compound, or a fluoroacrylate-based organic compound.

[0253] The organic layer may be disposed in other parts of the second opening area of the bank except for the part where the recrystallization layer is disposed.

[0254] The recrystallization layer may be subjected to low-temperature heat treatment so that the surface roughness of the recrystallization layer may increase.

[0255] The recrystallization layer may include a structure with increased surface roughness on the surface of the recrystallization layer.

[0256] The recrystallization layer may be provided only on the top surface of the dam portion and may include a structure with increased surface roughness on the surface of the recrystallization layer.

[0257] The recrystallization layer may be provided on the top surface and side portions of the dam portion and a part of the top surface of the exposed anode electrode, and may include a structure with increased surface roughness only on the surface of the recrystallization layer formed on the top surface of the dam portion.

[0258] The recrystallization layer may be provided only on the side portions of the dam portion and may include a structure with increased surface roughness on the surface of the recrystallization layer.

[0259] The recrystallization layer may be provided on the top surface and side portions of the dam portion and a part of the top surface of the exposed anode electrode, and may include a structure with increased surface roughness only on the surface of the recrystallization layer formed on the side portions of the dam portion.

[0260] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto. Without departing from the technical concept of the present disclosure, the present disclosure can be implemented in many different forms. Therefore, the exemplary embodiments of the present disclosure are provided only for the purpose of illustration and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: a substrate including a plurality of sub-pixels; a planarization layer disposed above the substrate and having a first opening region; an anode electrode disposed in the first opening region and on a side portion of the planarization layer adjacent to the first opening region; a bank portion exposing a part of the anode electrode and having a second opening region corresponding to the first opening region; a recrystallization layer disposed on the bank portion and containing a fluorine group; an organic layer disposed on the anode electrode exposed through the second opening region; and a cathode electrode disposed on the organic layer and the recrystallization layer.

2. The display device according to claim 1, wherein the first opening region has a width greater than a width of the second opening region.

3. The display device according to claim 1, wherein a part of the anode electrode extends from the side portion of the planarization layer to a top surface of the planarization layer.

4. The display device according to claim 1, wherein the anode electrode has a side portion corresponding to the side portion of the planarization layer.

5. The display device according to claim 4, wherein the anode electrode, the organic layer, and the cathode electrode constitute a light-emitting diode, wherein the light-emitting diode forms a main light-emitting region, wherein the side portion of the anode electrode forms a reflective light-emitting region, wherein the reflective light-emitting region is formed around the main light-emitting region, and wherein a non-light-emitting region is formed between the main light-emitting region and the reflective light-emitting region.

6. The display device according to claim 1, wherein the recrystallization layer is disposed in all sub-pixels.

7. The display device according to claim 1, wherein the recrystallization layer is disposed in some sub-pixels.

8. The display device according to claim 1, wherein the recrystallization layer is disposed on a top surface and a side portion of the bank portion and on a part of a top surface of the exposed anode electrode.

9. The display device according to claim 1, wherein the recrystallization layer is composed of a polychlorotrifluoroethylene (PCTFE)-based organic compound, a polytetrafluoroethylene (PTFE)-based organic compound, a perfluorodecyltrichlorosilane (FDTS)-based organic compound, a polyvinylidene fluoride (PVDF)-based organic compound, or a fluoroacrylate-based organic compound.

10. The display device according to claim 1, wherein the organic layer is disposed in other parts of the second opening region of the bank portion except for a part where the recrystallization layer is disposed.

11. The display device according to claim 1, wherein the recrystallization layer is subjected to low-temperature heat treatment such that a surface roughness of the recrystallization layer increases.

12. The display device according to claim 1, wherein the recrystallization layer includes a structure with an increased surface roughness on a surface of the recrystallization layer.

13. The display device according to claim 1, wherein the recrystallization layer is disposed only on a top surface of the bank portion and includes a structure with an increased surface roughness on a surface of the recrystallization layer.

14. The display device according to claim 1, wherein the recrystallized layer is disposed on a top surface and a side portion of the bank and a part of a top surface of the exposed anode electrode, and includes a structure with increased surface roughness only on a surface of the recrystallized layer formed on the top surface of the bank.

15. The display device according to claim 1, wherein the recrystallized layer is disposed only on a side portion of the bank and includes a structure with increased surface roughness on a surface of the recrystallized layer.

16. The display device according to claim 1, wherein the recrystallized layer is disposed on a top surface and a side portion of the bank and a part of a top surface of the exposed anode electrode, and includes a structure with increased surface roughness only on a surface of the recrystallized layer formed on the side portion of the bank.

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