Light-emitting device and preparation method thereof

Abstract

The invention provides a light-emitting device and a preparation method of the light-emitting device. The light-emitting device comprises a substrate, a dodging layer and at least one light-emitting diode chip, the dodging layer comprises a substrate layer and a plurality of nanoparticles, the substrate layer is located on the substrate, the nanoparticles are uniformly distributed in the substrate layer, and the at least one light emitting diode chip is located on the substrate layer. The nanoparticles in the substrate layer can perform Rayleigh scattering and Mie scattering on light emitted by the light emitting diode chip, and the light emitting angle of the light emitting device is changed. When the light-emitting device comprises light-emitting diode chips with different colors, due to the fact that the positions of the light-emitting diode chips with different colors are different, intensity differences of different colors under different visual angles are easily caused, and color deviation is further caused. Scattering intensity of light emitted by light-emitting diodes with different colors to the same area can be balanced, so that color deviation of the light-emitting device is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting device and a method for preparing the light-emitting device. Background Art

[0002] The application of light emitting diodes (LEDs) has expanded from indicator lights to multiple fields such as display screens, signal lights, lighting and medical equipment.

[0003] The related art provides a light-emitting device, including: a substrate and at least one light-emitting diode chip, wherein the light-emitting diode chip is located on the substrate.

[0004] Currently, the light emitting device with the above structure has the problem of light color deviation. Summary of the Invention

[0005] The embodiments of the present disclosure provide a light-emitting device and a method for manufacturing the light-emitting device. The light-emitting device produced can solve the problem of light color deviation. The technical solution is as follows:

[0006] In one aspect, a light emitting device is provided, comprising:

[0007] A substrate, a light-dotting layer and at least one light-emitting diode chip;

[0008] The light-homogenizing layer includes a matrix layer and a plurality of nanoparticles. The matrix layer is located on the substrate. The plurality of nanoparticles are evenly distributed in the matrix layer. The at least one light-emitting diode chip is located on the matrix layer.

[0009] Optionally, the thickness of the matrix layer is 500 to 50,000 angstroms.

[0010] Optionally, the matrix layer is an organic adhesive layer;

[0011] The organic adhesive layer is any one of silicon-based adhesive, polyimide, acrylic resin, epoxy resin and polydimethylsiloxane.

[0012] Optionally, the nanoparticles are nano-TiO2 particles, nano-SiO2 particles, Au metal nanoparticles or Ag metal nanoparticles,

[0013] Alternatively, the nanoparticles include at least two of nano-TiO2 particles, nano-SiO2 particles, Au metal nanoparticles and Ag metal nanoparticles.

[0014] Optionally, the nanoparticles have a particle size of 5 to 700 nm.

[0015] Optionally, the mass ratio of the plurality of nanoparticles to the matrix layer is 2 to 50%.

[0016] Optionally, the matrix layer includes a plurality of matrix structures, the plurality of matrix structures are located between the plurality of light-emitting diode chips and the substrate, and the substrate is exposed between the plurality of light-emitting diode chips;

[0017] The light emitting device further includes a light absorbing layer, wherein the light absorbing layer covers the plurality of light emitting diode chips and the substrate between the plurality of light emitting diode chips.

[0018] Optionally, the distance from the edge of the light absorbing layer to the edge of the light emitting device is greater than 6 μm.

[0019] Optionally, the light emitting device further comprises: a planarization layer, the planarization layer covers the light absorbing layer, and the planarization layer and the light absorbing layer are provided with electrode through holes for leading out electrodes of the light emitting diode chip.

[0020] In another aspect, a method for preparing a light-emitting device is provided, the method comprising:

[0021] providing a substrate;

[0022] Producing a light-dodging layer, the light-dodging layer comprising a matrix layer and a plurality of nanoparticles, the matrix layer being located on the substrate, and the plurality of nanoparticles being uniformly distributed within the matrix layer;

[0023] At least one light emitting diode chip is transferred onto the matrix layer by mass transfer technology.

[0024] The technical solutions provided by the embodiments of the present disclosure have the following beneficial effects:

[0025] In an embodiment of the present disclosure, a light-emitting device includes a light-leveling layer disposed between a substrate and an LED chip. The light-leveling layer includes a matrix layer and nanoparticles. The matrix layer allows the light-leveling layer to adhere tightly to the substrate and provides support for the nanoparticles. The nanoparticles can perform Rayleigh scattering and Mie scattering on light emitted by the LED chip, thereby changing the light output angle of the light-emitting device. When the light-emitting device includes LED chips of different colors, the different positions of the LED chips of different colors can easily cause intensity differences between different colors at different viewing angles, thereby causing color deviation. However, due to the provision of the light-leveling layer in the embodiment of the present disclosure, the intensity of light emitted by LEDs of different colors scattered into the same area can be balanced, thereby reducing color deviation of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0027] Figure 1 is a structural diagram of a light-emitting device provided by an embodiment of the present disclosure;

[0028] Figure 2 is a structural diagram of a light-emitting device provided by an embodiment of the present disclosure;

[0029] Figure 3 is a structural diagram of a light-emitting device provided by an embodiment of the present disclosure;

[0030] Figure 4 This is a flow chart of a method for preparing a light-emitting device provided by an embodiment of the present disclosure;

[0031] Figure 5 This is a flow chart of a method for preparing a light-emitting device provided by an embodiment of the present disclosure;

[0032] Figure 6 This is a structural diagram of a light-emitting device during preparation according to an embodiment of the present disclosure;

[0033] Figure 7 This is a structural diagram of a light-emitting device during preparation according to an embodiment of the present disclosure;

[0034] Figure 8 This is a structural diagram of a light-emitting device during preparation according to an embodiment of the present disclosure;

[0035] Figure 9 This is a structural diagram of a light-emitting device during preparation according to an embodiment of the present disclosure;

[0036] Figure 10 This is a structural diagram of a light-emitting device during preparation according to an embodiment of the present disclosure;

[0037] Figure 11 This is a schematic diagram of the light output angle of a light emitting device provided in an embodiment of the present disclosure.

[0038] The reference numerals are as follows:

[0039] 100: substrate; 101: light-uniforming layer; 102: light-emitting diode chip; 103: light-absorbing layer; 104: planarization layer; 105: electrode structure layer;

[0040] 151: connecting electrode layer; 152: four electrode pads;

[0041] 1011: matrix layer; 1012: nanoparticles; 1111: matrix structure;

[0042] 201: electrode through hole;

[0043] 301: organic adhesive layer; 302: temporary substrate. DETAILED DESCRIPTION

[0044] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0045] Figure 1 is a structural diagram of a light emitting device provided by an embodiment of the present disclosure. Figure 1 The light emitting device includes: a substrate 100, a light-homogenizing layer 101 and at least one light emitting diode chip 102.

[0046] The light homogenizing layer 101 includes a matrix layer 1011 and a plurality of nanoparticles 1012 . The matrix layer 1011 is located on the substrate 100 . The plurality of nanoparticles 1012 are evenly distributed in the matrix layer 1011 . At least one light emitting diode chip 102 is located on the matrix layer 1011 .

[0047] In an embodiment of the present disclosure, a light-emitting device includes a light-leveling layer disposed between a substrate and an LED chip. The light-leveling layer includes a matrix layer and nanoparticles. The matrix layer allows the light-leveling layer to adhere tightly to the substrate and provides support for the nanoparticles. The nanoparticles can perform Rayleigh scattering and Mie scattering on light emitted by the LED chip, thereby changing the light output angle of the light-emitting device. When the light-emitting device includes LED chips of different colors, the different positions of the LED chips of different colors can easily cause intensity differences between different colors at different viewing angles, thereby causing color deviation. However, due to the provision of the light-leveling layer in the embodiment of the present disclosure, the intensity of light emitted by LEDs of different colors scattered into the same area can be balanced, thereby reducing color deviation of the light-emitting device.

[0048] In the embodiment of the present disclosure, the thickness of the matrix layer 1011 can be 500 to 50,000 angstroms. A matrix layer of this thickness can provide sufficient space to accommodate the nanoparticles, and is neither too thin to cause deviation in the light output angle and uneven light distribution, which affects the display effect, nor too thick to reduce light transmittance.

[0049] Illustratively, the thickness of the matrix layer 1011 is 25,000 angstroms.

[0050] In the embodiment of the present disclosure, the matrix layer 1011 may be an organic adhesive layer. The organic adhesive can effectively improve the adhesion between the substrate and the light-distributing layer, thereby enhancing the stability and strength of the light-emitting device.

[0051] In the embodiment of the present disclosure, the organic adhesive layer may be any one of silicon-based adhesive, polyimide (PI), acrylic resin, epoxy resin and polydimethylsiloxane (PDMS).

[0052] The organic adhesive layer made of the above material can effectively improve the adhesion between the substrate and the light-distributing layer, enhancing the stability and strength of the light-emitting device. In addition, the above material has good light transmittance and can ensure light extraction efficiency.

[0053] Illustratively, the organic adhesive layer is a silicon-based adhesive layer.

[0054] In other examples, the organic adhesive layer may also be a precursor of any one of silicon-based adhesive, PI, acrylic resin, epoxy resin, and PDMS.

[0055] In the embodiment of the present disclosure, the nanoparticles 1012 may be nano-TiO 2 particles, nano-SiO 2 particles, Au metal nanoparticles, or Ag metal nanoparticles.

[0056] Alternatively, the nanoparticles 1012 include at least two of nano-TiO 2 particles, nano-SiO 2 particles, Au metal nanoparticles, and Ag metal nanoparticles.

[0057] Nanoparticles made of the above materials can form better Rayleigh scattering and Mie scattering for red, green, blue and other colors of light, change the light output angle of the light-emitting device, and guide the asymmetric three-color light into the same scattering area, thereby balancing the color deviation at large angles to the greatest extent.

[0058] Exemplarily, the nanoparticles 1012 are nano-TiO 2 .

[0059] Alternatively, the nanoparticles 1012 include nano-TiO 2 and nano-SiO 2 particles.

[0060] In the embodiment of the present disclosure, the particle size of the nanoparticles 1012 can be 5 to 700 nm. The particle size of the nanoparticles above is not too large to reduce the light transmittance, nor too small to cause insufficient light scattering and color deviation of the light emitting device.

[0061] Exemplarily, the particle size of the nanoparticles 1012 is 300 nm.

[0062] In the embodiment of the present disclosure, the mass ratio of the nanoparticles 1012 to the matrix layer 1011 can be 2-50%. A too high mass ratio will result in too high density between the nanoparticles and too low light transmittance, while a too low mass ratio will result in too low density between the nanoparticles and insufficient light scattering.

[0063] Exemplarily, the mass ratio of the nanoparticles 1012 to the matrix layer 1011 is 25%.

[0064] Figure 2 and Figure 3 is a structural diagram of a light emitting device provided by an embodiment of the present disclosure. Figure 2 and Figure 3 The matrix layer 1011 includes a plurality of matrix structures 1111 . The plurality of matrix structures 1111 are located between the plurality of light-emitting diode chips 102 and the substrate 100 . The substrate 100 is exposed between the plurality of light-emitting diode chips 102 .

[0065] The light emitting device further includes a light absorbing layer 103 , which covers the plurality of light emitting diode chips 102 and the substrate 100 between the plurality of light emitting diode chips 102 .

[0066] In this implementation, the multiple matrix structures facilitate the substrate to be divided to form multiple light-emitting devices. In addition, the matrix structures are not covered between the multiple LED chips 102 to avoid crosstalk between different LED chips.

[0067] In the embodiment of the present disclosure, the distance from the edge of the light absorbing layer 103 to the edge of the light emitting device is greater than 6 μm.

[0068] In this implementation, by controlling the distance from the edge of the light absorbing layer to the edge of the light emitting device to be greater than 6 μm, space is provided for depositing the planarization layer.

[0069] In the embodiment of the present disclosure, the light emitting device further includes a planarization layer 104 , which covers the light absorbing layer 103 , and the planarization layer 104 and the light absorbing layer 103 are provided with electrode through holes 201 for leading out electrodes of the light emitting diode chip 102 .

[0070] In this implementation, the planarization layer can form a flat surface to facilitate the subsequent fabrication of the electrode structure.

[0071] In the embodiment of the present disclosure, the light emitting device further includes: an electrode structure layer 105 . The electrode structure layer 105 may include a connecting electrode layer 151 and four electrode pads 152 .

[0072] The connection electrode layer 151 and the four electrode pads 152 are located on the planarization layer 104 , and the four electrode pads 152 are electrically connected to the connection electrode layer 151 .

[0073] In this implementation, a light-absorbing layer wraps around the LED chip, improving the contrast of the Micro LED in Package (MIP). The connecting electrode layer connects the electrodes of the three LED chips, forming a common cathode and three independent anodes. These electrodes are then connected to four electrode pads (also known as solder pads) to facilitate bonding to the driver circuit.

[0074] It should be noted that Figure 3 Only the portion of the connecting electrode layer 151 that is connected to the cathode of the light-emitting diode chip 102 to form a common cathode is shown, and only the electrode pads to which the common cathode is connected among the four electrode pads 152 are shown.

[0075] In the embodiment of the present disclosure, the substrate 100 may be any one of a sapphire substrate, a Si substrate, a SiC substrate, and the like.

[0076] For example, the substrate 100 may be a sapphire substrate.

[0077] In the embodiment of the present disclosure, the thickness of the substrate 100 may be 200-700 μm.

[0078] Exemplarily, the thickness of the substrate 100 is 500 μm.

[0079] In the embodiment of the present disclosure, each light-emitting device may include a light-emitting diode chip 102 located on a substrate layer 1011 .

[0080] In the embodiment of the present disclosure, each light emitting device may also include three or more light emitting diode chips 102. The light emitting device may be a light emitting diode chip of the same color or different colors. The number or color of the light emitting diodes depends on the driving mode and pixel specifications of the display panel.

[0081] Exemplarily, each light-emitting device includes three light-emitting diode chips 102, which are respectively a red light-emitting diode chip, a green light-emitting diode chip and a blue light-emitting diode chip. The three light-emitting diode chips 102 constitute a light-emitting device, which can be used as a pixel of a display panel.

[0082] In the embodiment of the present disclosure, the light absorption layer 103 may be a black matrix (BM).

[0083] In the embodiment of the present disclosure, the thickness of the light absorbing layer 103 is greater than the thickness of the LED chip 102 .

[0084] In the embodiment of the present disclosure, the area of the light absorbing layer 103 is not less than the area of the light uniforming layer 101 .

[0085] In the embodiment of the present disclosure, the planarization layer 104 may be an organic material layer.

[0086] In the embodiment of the present disclosure, the thickness of the planarization layer 104 may be 5-20 um.

[0087] Exemplarily, the thickness of the planarization layer 104 is 10 um.

[0088] Figure 4 This is a flow chart of a method for preparing a light emitting device according to an embodiment of the present disclosure. Figure 4 , the method steps include:

[0089] S11. Provide a substrate.

[0090] S12. Prepare a light-dodging layer, wherein the light-dodging layer includes a matrix layer and a plurality of nanoparticles. The matrix layer is located on the substrate, and the plurality of nanoparticles are uniformly distributed in the matrix layer.

[0091] S13, transferring at least one light-emitting diode chip onto the substrate layer by mass transfer technology.

[0092] In an embodiment of the present disclosure, a light-emitting device includes a light-leveling layer disposed between a substrate and an LED chip. The light-leveling layer includes a matrix layer and nanoparticles. The matrix layer allows the light-leveling layer to adhere tightly to the substrate and provides support for the nanoparticles. The nanoparticles can perform Rayleigh scattering and Mie scattering on light emitted by the LED chip, thereby changing the light output angle of the light-emitting device. When the light-emitting device includes LED chips of different colors, the different positions of the LED chips of different colors can easily cause intensity differences between different colors at different viewing angles, thereby causing color deviation. However, due to the provision of the light-leveling layer in the embodiment of the present disclosure, the intensity of light emitted by LEDs of different colors scattered into the same area can be balanced, thereby reducing color deviation of the light-emitting device.

[0093] Figure 5 This is a flow chart of a method for preparing a light emitting device according to an embodiment of the present disclosure. Figure 5 , the method steps include:

[0094] S21. Provide a substrate.

[0095] In the embodiment of the present disclosure, the substrate may be any one of a sapphire substrate, a Si substrate, a SiC substrate, and the like.

[0096] Illustratively, the substrate may be a sapphire substrate.

[0097] In the embodiment of the present disclosure, the thickness of the substrate may be 200-700 μm.

[0098] Exemplarily, the thickness of the substrate may be 500 μm.

[0099] In the embodiment of the present disclosure, S21 may include: performing single-side polishing on the substrate.

[0100] S22. A light-homogenizing layer is fabricated on the substrate. The light-homogenizing layer includes a matrix layer and a plurality of nanoparticles. The plurality of nanoparticles are uniformly distributed in the matrix layer.

[0101] Figure 6 This is a structural diagram of a light emitting device during preparation according to an embodiment of the present disclosure. Figure 6 , the light-homogenizing layer 101 covers the substrate 100 .

[0102] In the disclosed embodiment, the thickness of the matrix layer can be 500 to 50,000 angstroms. A matrix layer of this thickness provides sufficient space for the nanoparticles, is not too thin to cause deviation in the light output angle and uneven light distribution, affecting the display effect, nor is it too thick to reduce light transmittance.

[0103] Illustratively, the thickness of the matrix layer is 25,000 angstroms.

[0104] In the embodiment of the present disclosure, the matrix layer may be an organic adhesive layer. The organic adhesive can effectively improve the adhesion between the substrate and the light-distributing layer, thereby enhancing the stability and strength of the light-emitting device.

[0105] In the disclosed embodiments, the organic adhesive layer can be any of a silicone-based adhesive, polyimide (PI), acrylic resin, epoxy resin, and polydimethylsiloxane (PDMS). Using an organic adhesive layer made of these materials can effectively improve the adhesion between the substrate and the light-leveling layer, enhancing the stability and strength of the light-emitting device. Furthermore, these materials have good light transmittance, ensuring light extraction efficiency.

[0106] Illustratively, the organic adhesive layer is a silicon-based adhesive layer.

[0107] In other examples, the organic adhesive layer may also be a precursor of any one of silicon-based adhesive, PI, acrylic resin, epoxy resin, and PDMS.

[0108] In the embodiment of the present disclosure, the nanoparticles may be nano-TiO 2 particles, nano-SiO 2 particles, Au metal nanoparticles or Ag metal nanoparticles.

[0109] Alternatively, the nanoparticles include at least two of nano-TiO2 particles, nano-SiO2 particles, Au metal nanoparticles, and Ag metal nanoparticles.

[0110] Nanoparticles made of the above materials can form Rayleigh scattering and Mie scattering of red, green, blue and other colors of light, change the light output angle of the light-emitting device, and guide the asymmetric three-color light into the same scattering area, thereby balancing the color deviation at large angles to the greatest extent.

[0111] Exemplarily, the nanoparticles are nano-TiO2.

[0112] Alternatively, the nanoparticles include nano-TiO2 and nano-SiO2 particles.

[0113] In the embodiment of the present disclosure, the particle size of the nanoparticles can be 5 to 700 nm. The particle size of the nanoparticles above is not too large to cause a decrease in light transmittance, nor too small to cause insufficient light scattering and color deviation of the light-emitting device.

[0114] Exemplarily, the particle size of the nanoparticles is 300 nm.

[0115] In the embodiment of the present disclosure, the mass ratio of the nanoparticles to the matrix layer can be 2-50%. A too high mass ratio will result in too high density between the nanoparticles and too low light transmittance, while a too low mass ratio will result in too low density between the nanoparticles and insufficient light scattering.

[0116] Exemplarily, the mass ratio of the nanoparticles to the matrix layer is 25%.

[0117] S23, transferring multiple light-emitting diode chips to the light-uniform layer through mass transfer technology.

[0118] Figure 7 This is a structural diagram of a light emitting device during preparation according to an embodiment of the present disclosure. Figure 7 The temporary substrate 302 has an organic glue layer 301 and a plurality of light-emitting diode chips 102 , and the plurality of light-emitting diode chips 102 are connected to the light-uniforming layer 101 .

[0119] In one example, step S23 may include:

[0120] In the first step, a temporary substrate and a plurality of light emitting diode chips are provided.

[0121] In the embodiment of the present disclosure, an organic glue layer and a plurality of light-emitting diode chips arranged in a periodic pattern are provided on the temporary substrate.

[0122] In the second step, the multiple light-emitting diode chips on the temporary substrate are transferred to the light-uniforming layer.

[0123] In the embodiment of the present disclosure, the light-dotting layer and the plurality of light-emitting diode chips are bonded together in an environment with a temperature of 50 to 300° C. and a pressure of 50 to 5000 kg.

[0124] For example, the light-dotting layer and the plurality of light-emitting diode chips are bonded together in an environment with a temperature of 150° C. and a pressure of 2500 kg.

[0125] The third step is to peel off the temporary substrate.

[0126] In the embodiment of the present disclosure, each light-emitting device may include a light-emitting diode chip located on the substrate layer.

[0127] In the embodiment of the present disclosure, each light emitting device may also include three or more light emitting diode chips. The light emitting device may be a light emitting diode chip of the same color or different colors. The number or color of the light emitting diodes depends on the driving mode and pixel specifications of the display panel.

[0128] Exemplarily, each light-emitting device includes three light-emitting diode chips, which are a red light-emitting diode chip, a green light-emitting diode chip and a blue light-emitting diode chip. The three light-emitting diode chips constitute a light-emitting device, which can be used as a pixel of a display panel.

[0129] S24, performing graphic processing on the uniform light layer.

[0130] Figure 8 This is a structural diagram of a light emitting device during preparation according to an embodiment of the present disclosure. Figure 8 , the light-dodging layer 101 is patterned. Figure 8 The structure of one light-emitting diode chip is taken as an example. Usually, a light-emitting device includes three light-emitting diode chips.

[0131] In one example, step S24 may include:

[0132] The first step is to cover the surface of the light-distributing layer with a layer of photoresist.

[0133] The second step is to expose the photoresist.

[0134] The third step is to etch the light-uniform layer.

[0135] In the embodiment of the present disclosure, inductively coupled plasma etching (ICP) is used to etch the light-uniforming layer.

[0136] In the embodiment of the present disclosure, the light uniforming layer is etched at a distance of 2 to 10 μm from the edge of the light emitting device chip.

[0137] Step 4: Remove the photoresist.

[0138] S25 . Scrape the first substrate to form a plurality of light-emitting devices, each of which includes the first substrate, the first adhesive layer, and the light-emitting diode chip.

[0139] In the disclosed embodiment, a laser is used to scribe the trenches.

[0140] S26, making a light absorbing layer, where the light absorbing layer covers the substrate, the light uniforming layer and the side wall of the light emitting diode chip.

[0141] Figure 9 This is a structural diagram of a light emitting device during preparation according to an embodiment of the present disclosure. Figure 9 The light absorbing layer 103 covers the substrate 100 , the light uniforming layer 101 and the sidewalls of the light emitting diode chip 102 .

[0142] In one example, step S26 may include:

[0143] The first step is to make a light-absorbing film layer.

[0144] In the second step, the light-absorbing film layer is etched to form a light-absorbing layer.

[0145] In the embodiment of the present disclosure, the light absorption layer may be a black matrix (BM).

[0146] In the embodiment of the present disclosure, the thickness of the light absorbing layer is greater than the thickness of the light emitting diode chip.

[0147] In the embodiment of the present disclosure, the area of the light absorbing layer is not less than the area of the light uniforming layer.

[0148] In the embodiment of the present disclosure, the distance from the edge of the light absorbing layer to the edge of the light emitting device is greater than 6 μm.

[0149] In this implementation, by controlling the distance from the edge of the light absorbing layer to the edge of the light emitting device to be greater than 6 μm, space is provided for depositing the planarization layer.

[0150] S27, making a planarization layer, wherein the planarization layer covers the substrate, the light-emitting diode chip and the light-absorbing layer, and the planarization layer has an electrode through hole.

[0151] Figure 10 This is a structural diagram of a light emitting device during preparation according to an embodiment of the present disclosure. Figure 10 The planarization layer 104 covers the substrate 100 , the light-emitting diode chip 102 and the light-absorbing layer 103 , and has an electrode through hole 201 on the planarization layer 104 .

[0152] In one example, step S27 may include:

[0153] The first step is to make a planarization film layer.

[0154] The second step is to etch the planarization film layer to make electrode through holes and form a planarization layer.

[0155] In the embodiment of the present disclosure, the planarization layer may be an organic material layer.

[0156] In the embodiment of the present disclosure, the thickness of the planarization layer may be 5 to 20 um.

[0157] Exemplarily, the thickness of the planarization layer is 10 um.

[0158] In the embodiment of the present disclosure, the etched track width of the planarization layer may be 2 μm greater than the etched track width of the light absorption layer.

[0159] S28. Fabricate an electrode structure layer, and connect the electrode structure layer to the light-emitting diode chip through the electrode through-hole.

[0160] In the embodiment of the present disclosure, the electrode structure layer may include a connecting electrode layer and four electrode pads.

[0161] The connecting electrode layer and four electrode pads are located on the planarization layer, and the four electrode pads are electrically connected to the connecting electrode layer.

[0162] In this implementation, the light-absorbing layer wraps around the LED chip, improving the contrast of the MIP. The connecting electrode layer is used to lead out the electrodes of the three LED chips, forming a common cathode and three independent anodes. These electrodes are connected to four electrode pads (also known as solder pads) to facilitate bonding to the driver circuit.

[0163] It should be noted that Figure 3 Only the portion of the connecting electrode layer that is connected to the cathode of the light-emitting diode chip to form a common cathode is shown, and only the electrode pad to which the common cathode is connected among the four electrode pads is shown.

[0164] Figure 11 This is a schematic diagram of the light output angle of a light emitting device provided by an embodiment of the present disclosure, see Figure 11 The light-emitting solid angle of the light-emitting surface of the substrate 100 is expanded from a spatial angle A to a spatial angle B by the light-emission layer 101. By adjusting the area and relative position of the light-emission layer 101, the actual size of the spatial angle and the light distribution can be flexibly adjusted, thereby obtaining an adjustable light-emitting angle.

[0165] The above description is merely an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A light emitting device, characterized in that: The light-emitting device comprises: a substrate (100), a light-homogenizing layer (101), and at least one light-emitting diode chip (102); The light-homogenizing layer (101) comprises a matrix layer (1011) and a plurality of nanoparticles (1012); the matrix layer (1011) is located on the substrate (100); the plurality of nanoparticles (1012) are evenly distributed in the matrix layer (1011); and the at least one light-emitting diode chip (102) is located on the matrix layer (1011).

2. The light emitting device according to claim 1, wherein The thickness of the matrix layer (1011) is 500 to 50,000 angstroms.

3. The light emitting device according to claim 1 or 2, characterized in that: The matrix layer (1011) is an organic adhesive layer; The organic adhesive layer is any one of silicon-based adhesive, polyimide, acrylic resin, epoxy resin and polydimethylsiloxane.

4. The light emitting device according to claim 1 or 2, characterized in that: The nanoparticles (1012) are nano-TiO2 particles, nano-SiO2 particles, Au metal nanoparticles or Ag metal nanoparticles, Alternatively, the nanoparticles (1012) include at least two of nano-TiO2 particles, nano-SiO2 particles, Au metal nanoparticles, and Ag metal nanoparticles.

5. The light emitting device according to claim 1 or 2, characterized in that: The particle size of the nanoparticles (1012) is 5 to 700 nm.

6. The light emitting device according to claim 1 or 2, characterized in that: The mass ratio of the plurality of nanoparticles (1012) to the matrix layer (1011) is 2 to 50%.

7. The light emitting device according to claim 1 or 2, characterized in that: The matrix layer (1011) comprises a plurality of matrix structures (1111), wherein the plurality of matrix structures (1111) are located between the plurality of light-emitting diode chips (102) and the substrate (100), and the substrate (100) is exposed between the plurality of light-emitting diode chips (102); The light emitting device further comprises a light absorbing layer (103), wherein the light absorbing layer (103) covers the plurality of light emitting diode chips (102) and the substrate (100) between the plurality of light emitting diode chips (102).

8. The light emitting device according to claim 7, characterized in that The distance between the edge of the light absorbing layer (103) and the edge of the light emitting device is greater than 6 μm.

9. The light emitting device according to claim 7, characterized in that The light emitting device further comprises a planarization layer (104), the planarization layer (104) covers the light absorbing layer (103), and the planarization layer (104) and the light absorbing layer (103) are provided with electrode through holes (201) for leading out electrodes of the light emitting diode chip (102).

10. A method for preparing a light-emitting device, characterized in that: The method comprises: providing a substrate; Producing a light-dodging layer, the light-dodging layer comprising a matrix layer and a plurality of nanoparticles, the matrix layer being located on the substrate, and the plurality of nanoparticles being uniformly distributed within the matrix layer; At least one light emitting diode chip is transferred onto the matrix layer by mass transfer technology.

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