Thin film breakdown field strength test method, terminal equipment and test equipment

Abstract

The invention relates to a thin film breakdown field strength testing method, terminal equipment and testing equipment, and the method comprises the steps: obtaining a to-be-tested sample, placing the to-be-tested sample on the testing equipment, arranging the lower part of the to-be-tested sample on a lower electrode of the testing equipment, and arranging the upper part of the to-be-tested sample on a jig capable of adjusting the electrode area in the testing equipment; the jig is provided with a test area, a conductive element is placed above the test area, and the conductive element is connected with the positive electrode of a power supply of the test equipment; gradually increasing the voltage of the test equipment according to the test speed to test the to-be-tested sample until the to-be-tested sample is broken down by the voltage, and obtaining the breakdown voltage of the to-be-tested sample at the moment; and calculating the breakdown field strength of the to-be-tested sample according to the thickness data and the breakdown voltage. According to the method, the area of the electrode in the test process of the to-be-tested sample is adjusted through the size-adjustable test area, the test requirements of different to-be-tested samples are met, and the test flexibility and convenience are improved.

Description

Technical Field

[0001] The present application relates to the field of thin film testing technology, and in particular to a method for testing the breakdown field strength of a thin film, a terminal device, and a testing device. Background Art

[0002] In modern electronic devices, metallized film is an important dielectric material, and its breakdown field strength is an important parameter for measuring its electrical performance. Accurately measuring the breakdown field strength of metallized film is of great significance for evaluating its application value in various electronic devices. However, how to accurately test the breakdown field strength of the film has always been a challenge. Traditional measurement methods for metallized films usually require the configuration of electrodes, and the breakdown field strength is determined by applying voltage and recording the voltage when the film breaks down; specifically, electrodes with a fixed area are usually used to measure the breakdown field strength of the metallized film. The advantages of traditional measurement methods for metallized films are simple operation and easy implementation; however, due to the fixed area of the electrode, only specific areas of the film can be tested, the test area is small, and the overall performance of the film cannot be fully reflected; thirdly, since the shape and size of the electrode cannot be adjusted, the test conditions cannot be adjusted according to actual needs, which may affect the accuracy of the test results. Summary of the Invention

[0003] The present application provides a method, terminal device and testing equipment for testing the breakdown field strength of a thin film, which are used to solve the technical problems in the traditional method of measuring metallized films, in which the area of the electrode is fixed and the test results cannot be guaranteed due to the fixed area of the electrode.

[0004] In order to achieve the above objectives, this application provides the following technical solutions:

[0005] In one aspect, a method for testing the breakdown field strength of a thin film is provided, comprising the following steps:

[0006] Obtain a sample to be tested and place it on a testing device, with the lower portion of the sample being placed on the lower electrode of the testing device and the upper portion of the sample being placed on a fixture with an adjustable electrode area in the testing device, the fixture being provided with a test area of adjustable size, and a conductive element having an area larger than that of the test area being placed above the test area, the conductive element being connected to the positive electrode of the power supply of the testing device;

[0007] gradually increasing the voltage of the test device at a test speed to test the sample to be tested until the sample to be tested is broken down by the voltage, and obtaining the breakdown voltage of the sample to be tested at this time;

[0008] The thickness data of the sample to be tested is obtained, and the breakdown field strength of the sample to be tested is calculated according to the thickness data and the breakdown voltage.

[0009] Preferably, the conductive element is a metal foil; and / or the metal foil is an aluminum foil or a copper foil.

[0010] Preferably, the thickness of the conductive element is 5 μm to 10 μm.

[0011] Preferably, the fixture comprises a plurality of insulating sheets with openings, and the plurality of insulating sheets are opposed to and overlapped to form two test areas of adjustable size.

[0012] Preferably, the opening of the insulating sheet is in a semicircular or rectangular shape.

[0013] Preferably, the method for testing the breakdown field strength of the film comprises: adjusting the size of the test area by adjusting the degree of overlap of multiple insulating sheets.

[0014] Preferably, the fixture comprises four insulating sheets with openings, and two of the insulating sheets are arranged opposite to each other to form overlapping elements; one of the overlapping elements is used as a base, and the other overlapping element is placed on the base and overlaps with the base to form two test areas of adjustable size.

[0015] The test speed is 0.2kv / s~0.5kv / s.

[0016] On the other hand, a testing device is provided, which is applied to the above-mentioned method for testing the breakdown field strength of the thin film, and is characterized in that the testing device includes a fixture with an adjustable electrode area; the fixture includes four insulating sheets with openings, and the insulating sheets are arranged opposite to each other in pairs to obtain overlapping elements; one of the overlapping elements is used as a base, and the other overlapping element is placed on the base and overlaps with the base to form two test areas with adjustable sizes; and / or the opening shape of the insulating sheet is semicircular or rectangular.

[0017] In another aspect, a terminal device is provided, comprising a processor and a memory;

[0018] The memory is used to store program code and transmit the program code to the processor;

[0019] The processor is used to execute the above-mentioned thin film breakdown field strength testing method according to the instructions in the program code.

[0020] The present invention relates to a method for testing the breakdown field strength of a thin film, a terminal device and a testing device. The method for testing the breakdown field strength of the thin film comprises obtaining a sample to be tested and placing the sample to be tested on the testing device, wherein the lower portion of the sample to be tested is arranged on a lower electrode of the testing device, and the upper portion of the sample to be tested is arranged on a fixture with an adjustable electrode area in the testing device, wherein the fixture is provided with a test area of adjustable size, and a conductive element with an area larger than that of the test area is placed above the test area, and the conductive element is connected to the positive power supply of the testing device; the voltage of the testing device is gradually increased at a test speed to test the sample to be tested until the voltage breakdown test of the sample to be tested is completed, thereby obtaining the breakdown voltage of the sample to be tested; and obtaining thickness data of the sample to be tested, and calculating the breakdown field strength of the sample to be tested based on the thickness data and the breakdown voltage.

[0021] It can be seen from the above technical solution that the present application has the following advantages: the breakdown field strength test method of the film adjusts the area of the electrode during the test of the sample to be tested through an adjustable test area, so that the breakdown field strength test method of the film can adapt to samples to be tested of different sizes and specifications, and realize the test requirements of different samples to be tested, thereby improving the flexibility and convenience of the test, and solving the technical problems in the traditional measurement method of metallized film that the area of the electrode is fixed and the test adjustment cannot be adjusted according to the actual situation due to the fixed area of the electrode, and the test results cannot be guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0023] Figure 1 This is a flowchart of the steps of the method for testing the breakdown field strength of a thin film according to an embodiment of the present application;

[0024] Figure 2 Schematic diagram of the structure of the fixture used in the method for testing the breakdown field strength of a thin film according to an embodiment of the present application;

[0025] Figure 3 This is a schematic diagram of the terminal device described in an embodiment of the present application. DETAILED DESCRIPTION

[0026] In order to make the purpose, features, and advantages of the invention of this application more obvious and easy to understand, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the embodiments described below are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0027] In the description of the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0028] In the embodiments of the present application, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections, electrical connections; direct connections, or indirect connections through an intermediate medium; internal connections between two components, or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0029] The embodiments of the present application provide a thin film breakdown field strength test method, terminal device, and test equipment, which address the technical issues in conventional methods for measuring metalized thin films, such as the fixed electrode area, the inability to adjust the test results based on actual conditions, and the inability to guarantee test results. The thin film breakdown field strength test method, terminal device, and test equipment are applicable not only to thin film breakdown field strength testing, but also to testing the breakdown field strength of other electronic components, such as capacitors and inductors.

[0030] Example 1:

[0031] Figure 1 This is a flowchart of the steps of the method for testing the breakdown field strength of a thin film described in an embodiment of the present application.

[0032] like Figure 1 As shown, the embodiment of the present application provides a method for testing the breakdown field strength of a thin film, comprising the following steps:

[0033] S1. Obtain a sample to be tested and place it on a test device, with the lower portion of the sample to be tested being placed on a lower electrode of the test device, and the upper portion of the sample to be tested being placed on a fixture with an adjustable electrode area in the test device, wherein the fixture is provided with a test area of adjustable size, and a conductive element with an area larger than that of the test area is placed above the test area, wherein the conductive element is connected to the positive pole of a power supply of the test device.

[0034] It should be noted that in step S1, the sample to be tested is placed in the test equipment to facilitate testing of the sample to be tested. In this embodiment, the sample to be tested can be a metallized film. Before testing, the maximum voltage of the test equipment can be a 15kV high-voltage power supply. The power supply of the test equipment is equipped with a control knob that can select AC voltage or DC voltage. At the same time, a grounded metal plate is placed in the test equipment as the lower electrode. The sample to be tested is placed flat on the lower electrode and the lower end of the sample to be tested is abutted and connected to the lower electrode. The upper end of the sample to be tested passes through the test area of the fixture and is connected to the conductive element, completing the preparation of the sample to be tested before testing on the test equipment. When placing the sample to be tested on the lower electrode, it is necessary to pay attention to maintaining the flatness of the sample to be tested. The sample to be tested can be flattened using a tool (such as a hand) wearing rubber gloves. Visually check that there are no obvious bubbles or wrinkles between the sample to be tested and the metal plate to ensure the accuracy of the test.

[0035] In the embodiment of the present application, the test area can be adjusted according to the requirements of the sample to be tested, so that the breakdown field strength test method of the film can meet the test conditions of different samples to be tested, thereby improving the accuracy of the test results.

[0036] In the embodiment of the present application, the conductive element may be a metal foil; and / or, the metal foil may be an aluminum foil or a copper foil.

[0037] It should be noted that the thickness of the conductive element can be 5μm to 10μm. The conductive element can serve as the upper electrode of the test equipment. In this embodiment, the breakdown field strength test method of the film is performed by selecting a test equipment with a high-voltage power supply with a maximum voltage of 15kV, and placing the conductive element above the test area of the fixture to ensure that the breakdown field strength test method of the film can provide a stable high-voltage electric field to ensure the accuracy of the test. In other embodiments, the conductive element can also be other conductive foils.

[0038] S2. Gradually increase the voltage of the test equipment at a test speed to test the sample to be tested until the sample to be tested is broken down by the voltage, and obtain the breakdown voltage of the sample to be tested at this time.

[0039] It should be noted that in step S2, a breakdown field strength test is performed on the sample to be tested based on the determination in step S1 that the test conditions are met. In this embodiment, the test equipment is powered on, and the voltage is increased at a test rate of 0.2kV / s to 0.5kV / s until the film of the sample to be tested breaks down. At this point, the breakdown voltage of the sample to be tested, such as the breakdown voltage of a metallized film, is obtained from the test equipment. This film breakdown field strength test method can automatically complete the voltage increase and obtain the breakdown voltage of the sample to be tested through step S2, avoiding human error and improving test efficiency.

[0040] S3. Obtain thickness data of the sample to be tested, and calculate the breakdown field strength of the sample to be tested based on the thickness data and the breakdown voltage.

[0041] It should be noted that in step S3, the breakdown voltage of the sample to be tested is first obtained according to step S2, and then the breakdown field strength of the sample to be tested is calculated based on the thickness data and the breakdown voltage. In this embodiment, the breakdown voltage is further divided by the thickness data of the sample to be tested to obtain the breakdown field strength of the sample to be tested. This thin film breakdown field strength test method can effectively test the breakdown field strength of a sample to be tested (such as a metallized film), and the area of the upper electrode can be adjusted by adjusting the size of the test area of the fixture, thereby improving the accuracy and flexibility of the test.

[0042] In an embodiment of the present application, the method for testing the breakdown field strength of the thin film includes: determining the area size of the sample to be tested by adjusting the size of the test area.

[0043] It should be noted that the size of the test area determines the size of the measurement area of the sample to be tested. The larger the test area, the larger the measurement area of the sample to be tested. This thin film breakdown field strength test method adapts to test samples of different sizes by adjusting the size of the test area, making this thin film breakdown field strength test method highly practical.

[0044] In the embodiments of the present application, first, the breakdown field strength test method of the film can effectively solve the problem that the electrode area is fixed in the traditional method and the overall performance of the film cannot be fully reflected, thereby improving the accuracy and reliability of the test. Secondly, the breakdown field strength test method of the film adjusts the area of the test electrode by adjusting the area of the test area, adapts to the test requirements of different samples to be tested, and improves the flexibility and convenience of the test. In addition, the breakdown field strength test method of the film has a high degree of automation, which can greatly improve the test efficiency, reduce human errors, and is conducive to large-scale production and quality control. In other embodiments, the breakdown field strength test method of the film can also have broad application prospects in the fields of electronic equipment manufacturing, film preparation, and dielectric material research.

[0045] The present application provides a method for testing the breakdown field strength of a thin film, comprising obtaining a sample to be tested and placing the sample to be tested on a test device, wherein the lower portion of the sample to be tested is arranged on a lower electrode of the test device, and the upper portion of the sample to be tested is arranged on a fixture with an adjustable electrode area in the test device, wherein the fixture is provided with a test area of adjustable size, and a conductive element with an area larger than that of the test area is placed above the test area, and the conductive element is connected to the positive pole of a power supply of the test device; the voltage of the test device is gradually increased at a test speed to test the sample to be tested until the voltage breakdown test of the sample to be tested is completed, thereby obtaining the breakdown voltage of the sample to be tested; and obtaining thickness data of the sample to be tested, and calculating the breakdown field strength of the sample to be tested based on the thickness data and the breakdown voltage. The breakdown field strength test method of the film adjusts the area of the electrode during the test of the sample to be tested through an adjustable test area, so that the breakdown field strength test method of the film can be adapted to samples to be tested of different sizes and specifications, and can meet the test requirements of different samples to be tested, thereby improving the flexibility and convenience of the test; and solves the technical problems of the traditional measurement method for metallized films, in which the area of the electrode is fixed and the test cannot be adjusted according to actual conditions due to the fixed area of the electrode, and the test results cannot be guaranteed.

[0046] Figure 2 Schematic diagram of the structure of the fixture used in the thin film breakdown field strength testing method described in an embodiment of the present application.

[0047] like Figure 2 As shown, in one embodiment of the present application, the fixture includes multiple open insulating sheets 10, which are opposed and overlapped to form two adjustable test areas. The size of the test area can be adjusted by adjusting the degree of overlap of the multiple insulating sheets 10.

[0048] It should be noted that the opening shape of the insulating sheet 10 can be semicircular or rectangular.

[0049] like Figure 2 As shown, in an embodiment of the present application, the fixture includes four open insulating sheets 10, and two insulating sheets 10 are arranged relative to each other to obtain overlapping elements 11; with one overlapping element 11 as the base, the other overlapping element 12 is placed on the base and overlaps with the base to form two test areas of adjustable size, which are respectively recorded as test area one 21 and test area two 22.

[0050] It should be noted that the insulating sheet 10 can be selected as an insulating sheet. Two insulating sheets are placed above the sample to be tested. A semicircular opening is provided on one side of the two insulating sheets. The semicircular diameter of the opening is 3cm~10cm. Figure 2As shown. Two insulating sheets are arranged as a layer of overlapping elements facing each other, and another overlapping element is overlapped to form a test area without insulating sheets. The size of the test area can be adjusted by adjusting the degree of overlap of the insulating sheets, thereby adjusting the area of the upper electrode in the test device. This allows the test device to adjust the size of the test area of the fixture according to actual needs and test conditions, thereby improving the accuracy of test results. In this embodiment, the test area can be a hole.

[0051] In one embodiment of the present application, the breakdown field strength test method of the thin film adjusts the size of the test area by adjusting the degree of overlap of the insulating sheet so that the upper electrode area of the test equipment can be adjusted within a certain range, so as to adjust the test conditions according to actual needs, thereby more accurately measuring the breakdown field strength of the sample to be tested, and the flexibility of the breakdown field strength test method of the thin film is enhanced. Compared with the shortcomings of the prior art that the electrode area is fixed and cannot be adjusted, the breakdown field strength test method of the thin film has greater flexibility. Since the upper electrode area of the breakdown field strength test method of the thin film can be adjusted, different areas of the sample to be tested can be tested, thereby more comprehensively reflecting the overall performance of the sample to be tested; this is something that cannot be done in the prior art, thereby expanding the test range of the breakdown field strength test method of the thin film. The breakdown field strength test method of the thin film is simple to operate, and the area of the upper electrode of the test equipment can be quickly adjusted by adjusting the overlap of the insulating sheet, greatly improving the test efficiency.

[0052] Example 2:

[0053] An embodiment of the present application provides a testing device, which is applied to the above-mentioned thin film breakdown field strength testing method, and the testing device includes a fixture with an adjustable electrode area; the fixture includes four open insulating sheets, and the insulating sheets are arranged opposite to each other to form overlapping elements; one overlapping element is used as a base, and the other overlapping element is placed on the base and overlaps with the base to form two test areas of adjustable size; and / or the opening shape of the insulating sheet is semicircular or rectangular.

[0054] It should be noted that the steps of the method for testing the breakdown field strength of a thin film have been described in detail in the first embodiment, and the steps of the method for testing the breakdown field strength of a thin film will not be repeated in this embodiment.

[0055] like Figure 2 As shown, in an embodiment of the present application, the fixture includes four open insulating sheets 10, and two insulating sheets 10 are arranged relative to each other to obtain overlapping elements 11; with one overlapping element 11 as the base, the other overlapping element 12 is placed on the base and overlaps with the base to form two test areas of adjustable size, which are respectively recorded as test area one 21 and test area two 22.

[0056] It should be noted that the insulating sheet 10 can be selected as an insulating sheet. Two insulating sheets are placed above the sample to be tested. A semicircular opening is provided on one side of the two insulating sheets. The semicircular diameter of the opening is 3cm~10cm. Figure 2 As shown. Two insulating sheets are arranged as a layer of overlapping elements facing each other, and another overlapping element is overlapped to form a test area without insulating sheets. The size of the test area can be adjusted by adjusting the degree of overlap of the insulating sheets, thereby adjusting the area of the upper electrode in the test device. This allows the test device to adjust the size of the test area of the fixture according to actual needs and test conditions, thereby improving the accuracy of test results. In this embodiment, the test area can be a hole.

[0057] Example 3:

[0058] Figure 3 This is a schematic diagram of the terminal device described in an embodiment of the present application.

[0059] like Figure 3 As shown, an embodiment of the present application provides a terminal device, including a processor and a memory;

[0060] A memory, configured to store program codes and transmit the program codes to a processor;

[0061] The processor is used to execute the above-mentioned thin film breakdown field strength test method according to the instructions in the program code.

[0062] It should be noted that the processor is configured to execute the steps of the above-mentioned thin film breakdown field strength test method embodiment according to the instructions in the program code. Alternatively, the processor implements the functions of the modules / units in the above-mentioned system / device embodiments when executing the computer program.

[0063] For example, a computer program may be divided into one or more modules / units, one or more of which are stored in a memory and executed by a processor to complete the present application. One or more modules / units may be a series of computer program instruction segments capable of performing specific functions, and the instruction segments are used to describe the execution process of the computer program in a terminal device.

[0064] Terminal devices can be computing devices such as desktop computers, laptops, PDAs, and cloud servers. Terminal devices may include, but are not limited to, processors and memory. Those skilled in the art will appreciate that this does not constitute a limitation on terminal devices and may include more or fewer components than shown, or a combination of certain components, or different components. For example, terminal devices may also include input / output devices, network access devices, buses, and the like.

[0065] The processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (dSICs), field-programmable gate arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor.

[0066] Memory can be an internal storage unit of a terminal device, such as a hard drive or memory. It can also be an external storage device, such as a plug-in hard drive, a Smart Memory Card (SMC), a Secure Digital (SD) card, or a flash memory card. Furthermore, memory can include both internal and external storage units. Memory is used to store computer programs and other programs and data required by the terminal device. Memory can also be used to temporarily store data that has been output or is about to be output.

[0067] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0068] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0069] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0070] In addition, the functional units in the various embodiments of the present application may be integrated into a single processing unit, or each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0071] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program code, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0072] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for testing the breakdown field strength of a thin film, characterized in that: The following steps are involved: Obtain a sample to be tested and place it on a testing device, with the lower portion of the sample being placed on the lower electrode of the testing device and the upper portion of the sample being placed on a fixture with an adjustable electrode area in the testing device, the fixture being provided with a test area of adjustable size, and a conductive element having an area larger than that of the test area being placed above the test area, the conductive element being connected to the positive electrode of the power supply of the testing device; gradually increasing the voltage of the test device at a test speed to test the sample to be tested until the sample to be tested is broken down by the voltage, and obtaining the breakdown voltage of the sample to be tested at this time; The thickness data of the sample to be tested is obtained, and the breakdown field strength of the sample to be tested is calculated according to the thickness data and the breakdown voltage.

2. The method for testing the breakdown field strength of a thin film according to claim 1, wherein: The conductive element is a metal foil.

3. The method for testing the breakdown field strength of a thin film according to claim 1, wherein: The thickness of the conductive element is 5 μm to 10 μm.

4. The method for testing the breakdown field strength of a thin film according to any one of claims 1 to 3, characterized in that: The fixture includes a plurality of insulating sheets with openings, and the plurality of insulating sheets are opposed to and overlapped to form two test areas of adjustable size.

5. The method for testing the breakdown field strength of a thin film according to claim 4, wherein: The opening shape of the insulating sheet is semicircular or rectangular.

6. The method for testing the breakdown field strength of a thin film according to claim 4, wherein: include: The size of the test area is adjusted by adjusting the overlapping degree of the plurality of insulating sheets.

7. The method for testing the breakdown field strength of a thin film according to claim 4, wherein: The fixture includes four insulating sheets with openings, and two of the insulating sheets are arranged opposite to each other to form overlapping elements; one overlapping element is used as a base, and the other overlapping element is placed on the base and overlaps with the base to form two test areas with adjustable sizes.

8. The method for testing the breakdown field strength of a thin film according to any one of claims 1 to 3, characterized in that: The test speed is 0.2kv / s~0.5kv / s.

9. A testing device, used in the method for testing the breakdown field strength of a thin film according to any one of claims 1 to 8, characterized in that: The testing device includes a fixture with adjustable electrode area; the fixture includes four open insulating sheets, and the insulating sheets are arranged in pairs relative to each other to form overlapping elements; one of the overlapping elements is used as a base, and the other overlapping element is placed on the base and overlaps with the base to form two test areas of adjustable size; and / or the opening shape of the insulating sheet is semicircular or rectangular.

10. A terminal device, characterized in that: including a processor and a memory; The memory is used to store program code and transmit the program code to the processor; The processor is configured to execute the thin film breakdown field strength testing method according to any one of claims 1 to 8 according to instructions in the program code.

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