Plug-in filling method of adapter plate

Abstract

The invention provides a plug-in filling method for an adapter plate, and the method comprises the steps: preparing a molded superconducting metal column based on a temporary slide glass, and obtaining a first assembly; preparing a through hole structure based on the adapter plate to obtain a second assembly; the first assembly and the second assembly are assembled based on the corresponding relation between the formed superconducting metal columns and the through hole structures under the preset condition so that the formed superconducting metal columns can be inserted into the corresponding through hole structures and fixed through the adhesion layers, and an assembly is obtained; removing the sacrificial layer of the first component included in the assembly to expose the first end of the superconducting metal column in each through hole structure; and removing the etching stop layer of the second assembly included in the assembly to expose the second end of the superconducting metal column in each through hole structure. According to the plug-in filling method of the adapter plate provided by the embodiment of the invention, the process technology of filling the superconducting material in the adapter plate at low cost and high efficiency is realized, and the signal transmission quality and the mechanical reliability are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an insertion-type filling method for a transfer plate. Background Art

[0002] Quantum computing has garnered widespread attention in recent years due to its exponential superiority over classical computing in addressing specific scientific problems. Superconducting quantum computing, due to its high compatibility with currently mature semiconductor processes, is considered one of the mainstream technology paths toward achieving universal quantum computing in the future. Currently, superconducting quantum computing has progressed from prototype verification with tens of qubits to the initial commercialization of superconducting quantum processors with over a thousand qubits. Because each qubit requires a dedicated set of measurement and control circuits to control and read it, two-dimensional layout and routing processes are clearly unable to meet the demands of the rapid expansion of the qubit count. Currently, three-dimensional integration technology for quantum computing has become a key research hotspot in the field, with through-silicon via (TSV) adapters attracting widespread attention as the core interconnect structure for 3D integration. However, there is no complete consensus on the implementation of superconducting TSV adapters for superconducting quantum computing. Mainstream solutions include sidewall-filling TSVs with materials such as TiN and Al, and completely filling the TSVs with copper (a non-superconducting material) by growing a continuous superconducting material on the sidewalls of the TSVs. The main problem with the above solution is that it does not form a fully superconducting via structure that is completely filled with superconducting material. Compared with TSVs completely filled with superconducting material, the signal transmission quality and mechanical reliability are significantly inferior. Therefore, the development of fully superconducting TSV technology that completely fills the adapter with superconducting material is urgently needed. Summary of the Invention

[0003] In response to the problems in the prior art, an embodiment of the present invention provides an insertion-type filling method for an adapter plate, which can prepare superconducting vias completely filled with superconducting material in the adapter plate, thereby improving signal transmission quality and mechanical reliability.

[0004] The present invention provides an insertion-type filling method for an adapter plate, comprising:

[0005] A superconducting metal column is formed based on a temporary carrier to obtain a first component; wherein the first component includes the formed superconducting metal column and a sacrificial layer;

[0006] Preparing a through-hole structure based on the adapter plate to obtain a second component; wherein the second component includes an adhesion layer deposited on the sidewalls of each through-hole structure and an etch stop layer is provided on one side surface of the adapter plate;

[0007] Under preset conditions, based on the corresponding relationship between the formed superconducting metal pillars and the through-hole structures, assembling the first component and the second component so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer to obtain an assembly;

[0008] removing a sacrificial layer of a first component included in the assembly to expose first ends of superconducting metal pillars within each via structure;

[0009] The etch stop layer of the second component included in the assembly is removed to expose the second ends of the superconducting metal pillars within each via structure.

[0010] The insertion filling method of the adapter plate provided by the embodiment of the present invention can prepare a formed superconducting metal column based on a temporary carrier to obtain a first component; wherein the first component includes a formed superconducting metal column and a sacrificial layer; prepare a through-hole structure based on the adapter plate to obtain a second component; wherein the second component includes an adhesion layer deposited on the side wall of each through-hole structure and an etching stop layer is provided on one side surface of the adapter plate; under preset conditions, based on the correspondence between the formed superconducting metal column and the through-hole structure, the first component and the second component are assembled so that the formed superconducting metal column is inserted into the corresponding through-hole structure and fixed by the adhesion layer to obtain an assembly; the sacrificial layer of the first component included in the assembly is removed to expose the first end of the superconducting metal column in each through-hole structure; the etching stop layer of the second component included in the assembly is removed to expose the second end of the superconducting metal column in each through-hole structure, thereby realizing the preparation of superconducting through holes completely filled with superconducting material in the adapter plate, thereby improving signal transmission quality and mechanical reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0012] Figure 1 1 is a flow chart of the insertion filling method of the adapter plate provided in the first embodiment of the present invention.

[0013] Figure 2 It is a schematic flow chart of a method for preparing a superconducting metal column provided in the second embodiment of the present invention.

[0014] Figure 3 4 is a flow chart of a method for preparing a superconducting metal column provided in the third embodiment of the present invention.

[0015] Figure 4 4 is a schematic diagram of a process for exposing the first end of a superconducting metal column provided by a fourth embodiment of the present invention.

[0016] Figure 5 1 is a flow chart of a method for preparing a through-hole structure of an adapter plate provided in a fifth embodiment of the present invention.

[0017] Figure 6 4 is a schematic diagram of a process for exposing the second end of a superconducting metal column provided by a sixth embodiment of the present invention.

[0018] Figure 7 1 is a flow chart of a through-hole insertion filling method for an adapter board provided in a seventh embodiment of the present invention.

[0019] Figure 8 4 is a flow chart of a method for preparing a superconducting wiring layer of an adapter plate provided in an eighth embodiment of the present invention.

[0020] Figure 9A It is a schematic structural diagram of forming a temporary bonding material layer on a temporary carrier provided by the ninth embodiment of the present invention.

[0021] Figure 9B It is a schematic structural diagram of forming a sacrificial layer on a temporary carrier provided by the ninth embodiment of the present invention.

[0022] Figure 9C It is a schematic structural diagram of forming an In bump pattern on a temporary carrier provided by the ninth embodiment of the present invention.

[0023] Figure 9D It is a schematic structural diagram of forming In bumps on a temporary wafer provided by the ninth embodiment of the present invention.

[0024] Figure 9E It is a schematic structural diagram of forming a second layer of photoresist and In bumps on a temporary carrier provided by the ninth embodiment of the present invention.

[0025] Figure 9F It is a schematic structural diagram of the In column formed on the temporary carrier provided by the ninth embodiment of the present invention.

[0026] Figure 9G 1 is a schematic structural diagram of an In column exposed and formed on a temporary wafer provided in the ninth embodiment of the present invention.

[0027] Figure 9H It is a schematic structural diagram of forming an etch stop layer and a through-hole pattern on a silicon wafer provided by the ninth embodiment of the present invention.

[0028] Figure 9I It is a schematic structural diagram of forming a through hole in a transfer board provided by the ninth embodiment of the present invention.

[0029] Figure 9J It is a structural schematic diagram of removing photoresist on an adapter board provided by the ninth embodiment of the present invention.

[0030] Figure 9K It is a schematic structural diagram of depositing an insulating layer on a transfer plate provided by the ninth embodiment of the present invention.

[0031] Figure 9L 3 is a schematic structural diagram of a deposited adhesion layer provided by a ninth embodiment of the present invention.

[0032] Figure 9M It is a schematic structural diagram of the assembly of the first component and the second component provided by the ninth embodiment of the present invention.

[0033] Figure 9N This is a schematic structural diagram of the assembled first component and second component provided by the ninth embodiment of the present invention.

[0034] Figure 9O 2 is a schematic diagram of the structure after the temporary carrier is removed provided by the ninth embodiment of the present invention.

[0035] Figure 9P It is a schematic diagram of the structure after the sacrificial layer is removed provided by the ninth embodiment of the present invention.

[0036] Figure 9Q It is a schematic diagram of the structure after the etch stop layer is removed provided by the ninth embodiment of the present invention.

[0037] Figure 9R 4 is a schematic structural diagram of the exposed second end of the superconducting metal column provided by the ninth embodiment of the present invention.

[0038] Figure 9S It is a schematic structural diagram of forming an insulating layer provided by the ninth embodiment of the present invention.

[0039] Figure 9T It is a schematic structural diagram of a ninth embodiment of the present invention after a window is opened on the insulating layer.

[0040] Figure 9U It is a schematic structural diagram of the ninth embodiment of the present invention after the superconducting metal layer is formed.

[0041] Figure 9V 4 is a schematic diagram of the structure of the superconducting metal layer after planarization provided by the ninth embodiment of the present invention.

[0042] Figure 9W This is a schematic diagram of the structure of the adapter plate after superconducting wiring patterning is completed, provided by the ninth embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the embodiments of the present invention are further described in detail with reference to the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention. It should be noted that, unless there is a conflict, the embodiments and features in the embodiments in this application can be combined with each other in any way. The acquisition, storage, use, processing, etc. of data in the technical solutions in this application comply with the relevant provisions of laws and regulations.

[0044] In order to facilitate understanding of the technical solution provided by this application, the relevant contents of the technical solution of this application are first explained below.

[0045] At present, there is no mature process for completely filling superconducting materials with high aspect ratio TSV in the adapter plate structure used for superconducting quantum computing, especially for preparing superconducting TSV adapter plates with small diameters and high integration density at the micron level. In order to solve the above problems, the present application proposes an insertion filling method for the adapter plate, which separately prepares superconducting metal columns and through-hole structures in the adapter plate, inserts the superconducting metal columns into the through-hole structures, and forms a complete filling of the adapter plate by reflow method, wherein, when a low-melting-point superconducting alloy is additionally used as an auxiliary solder, a low-temperature reflow method can also be used to achieve an effective connection between the superconducting metal columns and the side walls of the through-holes. The superconducting metal columns need to be prepared through multiple photolithography processes, and the superconducting metal columns can have a large aspect ratio, such as greater than 5:1. Since there is no need to directly electroplate the superconducting metal columns in the through-hole structure of the adapter plate, the development of a complex superconducting metal electroplating solution system containing accelerators, inhibitors and levelers for high aspect ratio through-holes is avoided, which significantly reduces the development cost and process complexity.

[0046] The insert filling method of the adapter plate provided in the embodiment of the present invention is applicable to adapter plate through-hole structures of different substrate materials, such as silicon through-hole vias, glass through-hole vias or molded through-holes, etc., and can improve the signal transmission quality of superconducting through-holes and reduce the preparation cost of superconducting through-holes.

[0047] Figure 1 FIG. 1 is a flow chart of the insertion filling method of the adapter plate provided by the first embodiment of the present invention, as shown in FIG. Figure 1 As shown, the insert-type filling method of the adapter plate provided by the embodiment of the present invention includes:

[0048] S101, preparing a formed superconducting metal column based on a temporary carrier to obtain a first component; wherein the first component includes the formed superconducting metal column and a sacrificial layer;

[0049] Specifically, in the embodiment of the present invention, the temporary carrier needs to be removed later. In order to facilitate the removal of the temporary carrier and provide temporary support for the formed superconducting metal column, a sacrificial layer is provided. The sacrificial layer includes necessary structures such as a bump plating seed layer, a bump plating adhesion layer, and a temporary bonding material layer. Then, a formed superconducting metal column is prepared on the sacrificial layer to obtain a first component. The first component includes a formed superconducting metal column and a sacrificial layer. The temporary carrier can be a bare glass sheet, which is selected according to actual needs and is not limited in the embodiment of the present invention. The superconducting metal column can be a superconducting metal such as indium, which is selected according to actual needs and is not limited in the embodiment of the present invention. Pure indium is preferred. Indium is soft in texture and has strong deformation ability, which helps to better and completely fill the through hole during bonding.

[0050] S102, preparing a through-hole structure based on the adapter plate to obtain a second component; wherein the second component includes an adhesion layer deposited on the sidewalls of each through-hole structure and an etch stop layer is provided on one side surface of the adapter plate;

[0051] Specifically, a through-hole structure is prepared in the adapter plate, and the through-hole structure includes a through-hole that passes through the adapter plate. In order to facilitate subsequent assembly, an etching stop layer needs to be provided on one side surface of the adapter plate, and an adhesion layer will be deposited on the inner wall of each through-hole structure, and the adhesion layer helps to fix the superconducting metal column to the through-hole structure. In order to achieve good insulation, if the adapter plate adopts non-insulating materials such as doped silicon, then the through-hole structure may include an insulating layer for achieving insulation between the superconducting metal column and the adapter plate base material; if the adapter plate adopts insulating material, then the through-hole structure does not need to include an insulating layer. The thickness of the adapter plate is set according to actual needs, and the embodiment of the present invention does not limit it. The adapter plate can be made of silicon wafers, glass wafers, etc., and can be selected according to actual needs, and the embodiment of the present invention does not limit it.

[0052] S103. Under preset conditions and based on the correspondence between the formed superconducting metal pillars and the through-hole structures, assembling the first component and the second component so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer, thereby obtaining an assembly;

[0053] Specifically, the formed superconducting metal column included in the first component corresponds one to one with the through-hole structure included in the second component. Under preset conditions, the formed superconducting metal column is inserted into the corresponding through-hole structure according to the correspondence between the formed superconducting metal column and the through-hole structure and fixed by the adhesion layer, so as to realize the assembly of the first component and the second component and obtain an assembly. The preset conditions may include pressure conditions and temperature conditions, which are set according to actual needs and are not limited in the embodiments of the present invention. Under pressure conditions, the formed superconducting metal column is inserted into the corresponding through-hole structure and fully deformed. Under temperature conditions, the superconducting metal column in the through-hole structure will melt, and after the molten superconducting metal column cools down, it can be fixed together with the adhesion layer in the through-hole structure.

[0054] S104, removing the sacrificial layer of the first component included in the assembly to expose the first end of the superconducting metal column in each through-hole structure;

[0055] Specifically, after obtaining the assembly, it is necessary to remove redundant structures on the adapter plate and remove the sacrificial layer of the first component included in the assembly to expose the first ends of the superconducting metal pillars in each through-hole structure in the adapter plate.

[0056] S105 , removing the etch stop layer of the second component included in the assembly to expose the second end of the superconducting metal pillar in each through-hole structure.

[0057] Specifically, the etch-stop layer of the second component included in the assembly is removed to expose the second ends of the superconducting metal pillars within each via structure. If an insulating layer, or both an insulating layer and an adhesion layer, are present between the second ends of the superconducting metal pillars and the etch-stop layer, the insulating layer, or both the insulating layer and the adhesion layer, are further removed to expose the second ends of the superconducting metal pillars.

[0058] The insert filling method of the adapter plate provided by the embodiment of the present invention can prepare a formed superconducting metal column based on a temporary carrier to obtain a first component; wherein the first component includes a formed superconducting metal column and a sacrificial layer; prepare a through-hole structure based on the adapter plate to obtain a second component; wherein the second component includes an adhesion layer deposited on the side wall of each through-hole structure and an etching stop layer is provided on one side surface of the adapter plate; under preset conditions, based on the correspondence between the formed superconducting metal column and the through-hole structure, the first component and the second component are assembled so that the formed superconducting metal column is inserted into the corresponding through-hole structure and fixed by the adhesion layer to obtain an assembly; the sacrificial layer of the first component included in the assembly is removed to expose the first end of the superconducting metal column in each through-hole structure; the etching stop layer of the second component included in the assembly is removed to expose the second end of the superconducting metal column in each through-hole structure, thereby realizing the preparation of superconducting through-holes filled with superconducting material in the adapter plate, and improving the signal transmission quality and mechanical reliability.

[0059] Based on the above embodiments, the insert-type filling method of the adapter plate provided in an embodiment of the present invention further includes: before obtaining the assembly, placing a superconducting alloy of a preset size into the through-hole structure of the second component; accordingly, under preset conditions and based on the corresponding relationship between the formed superconducting metal pillars and the through-hole structures, assembling the first component and the second component so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer, including:

[0060] The superconducting alloy in the through-hole structure of the second component is heated so that the melted superconducting alloy welds and fixes the formed superconducting metal column to the adhesion layer; wherein the heating temperature is higher than the melting point of the superconducting alloy and lower than the melting point of the superconducting metal column.

[0061] Specifically, after obtaining the second component, a superconducting alloy of preset size is placed in the through-hole structure of the second component as a welding material for the superconducting metal column and the through-hole structure. The bottom of each through-hole structure close to the etch stop layer is at least partially filled with a superconducting alloy, so that when the first component and the second component are assembled, the superconducting alloy can weld the superconducting metal column to the bottom of the through-hole structure close to the etch stop layer to prevent the superconducting metal column from falling out or shifting in subsequent processes. The preset size can ensure that the superconducting alloy can be placed in the through-hole structure. The preset size is set according to actual needs and is not limited in the embodiment of the present invention. The superconducting alloy can be in the form of balls, particles, powder, blocks, etc., which is not limited in the embodiment of the present invention.

[0062] When assembling the first and second components, the second component can be heated to melt the superconducting alloy within the through-hole structures of the second component. After the superconducting metal pillars are inserted into the corresponding through-hole structures, the superconducting alloy within each through-hole structure is allowed to cool and solidify, thereby allowing the superconducting metal pillars to be welded and fixed to the adhesive layer within the through-hole structures. It is understood that the heating temperature can melt the superconducting alloy, but the superconducting metal pillars will not melt. The melting point of the superconducting alloy is lower than that of the superconducting metal pillars, and the melting point of the superconducting metal pillars is higher than the heating temperature.

[0063] It is understandable that in the process of inserting the superconducting metal column into the through-hole structure, the superconducting alloy has heated up and melted and is in a liquid state. The liquid superconducting alloy is squeezed by the superconducting metal column in the through-hole structure and will climb upward along the gap between the superconducting metal column and the through-hole structure, thereby increasing the welding area of the superconducting metal column and facilitating the fixation of the superconducting metal column in the through-hole structure.

[0064] It's important to note that an alloy is a material composed of one metal with one or more other metals or non-metals. Due to factors such as differences in solid solubility, mutual chemical bonding, and the addition of other elements, alloys typically have lower melting points than pure metals. Superconducting alloys are a natural choice as solder for superconducting metal columns formed from the corresponding superconducting elements.

[0065] For example, InSn balls are placed evenly in small batches (to prevent filling) on the surface of a horizontal adapter plate with a through-hole structure, and are subjected to high-frequency mechanical vibration, assisted by X-ray equipment observation, to ensure that the bottom of the through-hole structure is filled with InSn balls.

[0066] It is understood that in order to ensure that the superconducting metal column can be inserted into the through-hole structure, the diameter of the superconducting metal column is smaller than the diameter of the through-hole structure, and the sum of the volumes of the superconducting metal column and the superconducting alloy should be less than or equal to the volume that can be accommodated in the through-hole structure. In order to ensure that the superconducting metal column can be inserted into the bottom formed by the presence of the etch stop layer in the through-hole structure, the height of the superconducting metal column will be greater than the length of the through-hole structure. The superconducting metal column is preferably composed of a soft and deformable element, such as indium, so that it can completely fill the through-hole structure by deformation under pressure and make the sacrificial layer close to the surface of the adapter plate.

[0067] It is understandable that in the embodiment of the present invention, a superconducting alloy of preset size is placed in the through-hole structure of the second component, and the superconducting metal column is fixed by low-temperature reflux. This can significantly reduce the maximum temperature value experienced by the assembly during the process, and is suitable for application scenarios that are temperature-sensitive and have a low thermal budget.

[0068] Figure 2 FIG. 1 is a flow chart of a method for preparing a superconducting metal column according to a second embodiment of the present invention. Figure 2 As shown, based on the above embodiments, further, the superconducting metal column formed based on the temporary carrier is prepared to obtain the first component, which includes:

[0069] S201, forming a sacrificial layer on the surface of a temporary carrier, wherein the sacrificial layer includes a temporary bonding material layer, a bump plating adhesion layer, and a bump plating seed layer;

[0070] Specifically, a temporary bonding material layer is formed on the surface of the temporary carrier, and then a bump electroplating adhesion layer and a bump electroplating seed layer are sequentially grown on the surface of the temporary bonding material layer.

[0071] The temporary bonding material layer can be made of a photosensitive responsive material, which can fall off under laser induction, so as to facilitate the subsequent removal of the temporary carrier. The temporary carrier can be made of a glass sheet that is light-transmitting so that the laser can irradiate the photosensitive responsive material. The photosensitive responsive material can be any intermediate layer material that can fall off the original substrate under laser induction, such as a light-to-heat-conversion sacrificial layer (LTHC) or a temporary bonding adhesive. LTHC will be converted into powder under laser irradiation, making it easy to remove the temporary carrier. The temporary bonding adhesive can also be removed using a laser debonding process.

[0072] The temporary bonding material layer can also be made of other non-photosensitive materials, and the temporary carrier can also be made of non-light-transmitting materials. The two can be separated by mechanical stripping, chemical dissolution, thermal sliding, etc. For example, the temporary bonding material layer can be made of bonding glue, and the thin sheet is inserted between the temporary carrier and the temporary bonding material layer. The temporary carrier can be removed by the combined action of tension and rotational shear force. The mechanical stripping method requires precise control of the magnitude and direction of the force to avoid damage to the adapter plate or device layer due to excessive mechanical stress. The temporary bonding material layer can also be made of bonding glue that can be fully dissolved in a specific solvent, and the temporary carrier can be removed subsequently by chemical immersion. The temporary bonding material layer is completely immersed in a solvent of specific composition, so that the bonding glue is fully dissolved, and then the temporary carrier is separated. The temporary bonding material layer can also be made of bonding glue with poor thermal stability so that the temporary carrier can be removed by thermal sliding. For example, a heated suction cup is used to hold a temporary carrier. The temperature is raised to soften the bonding adhesive, causing it to lose its effectiveness. Then, a certain shear force is applied to allow the temporary carrier to slide out of the bump plating adhesion layer and bump plating seed layer. The hot slip method requires precise temperature control to prevent premature melting of the superconducting metal pillars.

[0073] The bump plating seed layer directly supports the superconducting metal pillars. Conductive materials compatible with the superconducting metal plating process can be used for this layer. For indium, Cu, Ru, and other metals can be used. The bump plating adhesion layer improves the bond strength between the bump plating seed layer and the temporary bonding material layer, helping to ensure the stability of the electroplating process. Materials such as Ti and TiW can be used for this layer.

[0074] S202, growing a superconducting metal column on the bump electroplating seed layer by multiple photolithography and electroplating until the total height of the superconducting metal column reaches a preset height;

[0075] Specifically, due to the deep depth of the through-hole structure in the adapter plate, it is impossible to directly prepare a superconducting metal column of sufficient height in one go. Therefore, the present application proposes preparing the superconducting metal column in multiple steps. The cumulative height of the superconducting metal columns prepared in multiple steps can meet the height requirements of the through-hole structure for the superconducting metal column. The first photolithography and electroplating process forms a superconducting metal column of a certain height on the bump electroplating seed layer. The second photolithography and electroplating process will form a superconducting metal column of a certain height based on the structure of the superconducting metal column and the photoresist formed by the first photolithography process. The superconducting metal column formed by the second photolithography and electroplating process will be on the superconducting metal column formed by the first photolithography and electroplating process. The third photolithography and electroplating process will form a superconducting metal column of a certain height based on the structure of the superconducting metal column and the photoresist formed by the second photolithography and electroplating process. The superconducting metal column formed by the third photolithography and electroplating process will be on the superconducting metal column formed by the second photolithography and electroplating process. And so on, until the total height of the superconducting metal column reaches a preset height, the photolithography process is stopped. The superconducting metal column whose total height reaches the preset height is a formed superconducting metal column. The preset height is set based on actual needs and is not limited in the present embodiment. The number of superconducting metal pillars is set based on actual needs and is not limited in the present embodiment. The diameter of each superconducting metal pillar can be greater than 1 micron, and the spacing between each superconducting metal pillar can be greater than the diameter of a single superconducting metal pillar.

[0076] Understandably, to reduce the number of photolithography passes, each photolithography and electroplating step should yield as high a superconducting metal pillar as possible while maintaining the quality of the superconducting metal pillar. Single-step photolithography can be performed using thick photoresists to minimize the total number of photolithography passes. Suitable photoresists include AX12XT-20PL-10, which has a thicker photoresist thickness after molding.

[0077] S203, removing the photoresist and exposing the formed superconducting metal column.

[0078] Specifically, after the superconducting metal pillars reaching a preset height are obtained, the photoresist on the bump plating seed layer is removed, thereby exposing the superconducting metal pillars formed on the bump plating seed layer.

[0079] Through multiple photolithography and electroplating processes, superconducting metal columns of the required length for the through-hole structure of the adapter board are obtained, avoiding the development of a complex plating solution system containing accelerators, inhibitors and levelers for electroplating superconducting metals in high-aspect-ratio TSVs, thereby reducing process costs.

[0080] Figure 3 FIG. 1 is a flow chart of a method for preparing a superconducting metal column according to a third embodiment of the present invention. Figure 3 As shown, based on the above embodiments, further, growing a superconducting metal column on the support layer by photolithography and electroplating each time includes:

[0081] S301, performing photolithography on the support layer to form a superconducting metal bump pattern;

[0082] Specifically, the first photolithography process is performed on the bump plating seed layer to form a superconducting metal bump pattern on the bump plating seed layer. The second photolithography process and each subsequent photolithography process are performed on the layer of superconducting metal pillars and photoresist formed by the previous photolithography and electroplating process to form a superconducting metal bump pattern. The support layer for the first photolithography process is the bump plating seed layer; from the second photolithography process onwards, the support layer is a layer of superconducting metal pillars and photoresist formed by the previous photolithography process.

[0083] S302, forming superconducting metal bumps by electroplating in the holes of the superconducting metal bump pattern, and ensuring that the difference between the height of the superconducting metal bumps and the thickness of the photoresist is within a preset range;

[0084] Specifically, a superconducting metal column plating solution system is used to electroplate superconducting metal bumps within the holes of the superconducting metal bump pattern, ensuring that the difference between the height of the superconducting metal bumps and the thickness of the photoresist is within a preset range to facilitate the next photolithography and electroplating process. The plating solution for the superconducting metal column can be an existing plating solution. The preset range is set according to actual needs and is not limited in the present embodiment.

[0085] For example, for a superconducting metal column using indium, the plating solution may be an indium sulfamate plating solution system.

[0086] Photolithography can include steps such as pre-baking, HMDS coating, photoresist coating, pre-baking, exposure, intermediate baking, development, spin drying, and post-baking.

[0087] Based on the above embodiments, the multiple photolithography steps are further described as two or more photolithography steps. In order to obtain a superconducting metal pillar having a predetermined height, two or more photolithography steps are performed. The specific number of photolithography steps can be determined based on the thickness of the adapter plate and the height that can be obtained by each photolithography and electroplating step of the superconducting metal. Two or more photolithography steps include two photolithography steps and more than two photolithography steps.

[0088] Figure 4 FIG. 4 is a schematic diagram of a process for exposing the first end of a superconducting metal column according to a fourth embodiment of the present invention. Figure 4 As shown, based on the above embodiments, further, removing the sacrificial layer of the first component included in the assembly to expose the first end of the superconducting metal column in each through-hole structure includes:

[0089] S401, removing the temporary slide;

[0090] Specifically, if the temporary bonding material layer adopts a photosensitive responsive material, then the temporary carrier can be light-transmissive, and the photosensitive responsive material can be denatured by laser irradiation, so that the temporary carrier can be separated from the temporary bonding material layer, thereby enabling the temporary carrier to be removed. If the temporary bonding material layer adopts an ordinary bonding adhesive, the temporary carrier can be removed by mechanical peeling. A thin sheet is inserted between the temporary carrier and the temporary bonding material layer, and the temporary carrier is removed by the shear force of tension and rotation. If the temporary bonding material layer adopts a bonding adhesive that can be dissolved in a specific solvent, the temporary carrier can be removed by chemical immersion. The temporary bonding material layer is immersed in a solvent to gradually dissolve the bonding adhesive, thereby enabling the temporary carrier to be removed. If the temporary bonding material layer adopts a bonding adhesive with poor thermal stability, the temporary carrier can be removed by a hot sliding method. A heatable suction cup is used to adsorb the temporary carrier, the bonding adhesive is softened by heating, and then a shear force is applied to make the temporary carrier slide out of the bump electroplating adhesion layer and the bump electroplating seed layer.

[0091] S402, removing the residue of the temporary bonding material layer;

[0092] Specifically, after the temporary carrier is removed, some temporary bonding material layer may remain, and the temporary bonding material layer may be removed by chemical cleaning.

[0093] S403 , etching the bump electroplating seed layer to expose the first end of the superconducting metal pillar in each through-hole structure.

[0094] Specifically, the bump plating seed layer can be removed by wet or dry etching, thereby exposing the first end of the superconducting metal column in each through-hole structure.

[0095] Figure 5 FIG. 1 is a flow chart of a method for preparing a through-hole structure of an adapter plate provided in a fifth embodiment of the present invention. Figure 5 As shown, based on the above embodiments, further, preparing the through-hole structure based on the adapter plate to obtain the second component includes:

[0096] S501, growing an etch stop layer on the first surface of the adapter plate, and performing photolithography to form a through-hole pattern on the second surface of the adapter plate;

[0097] Specifically, an etch-stop layer is grown on the first surface of the adapter plate. This serves as an etch-stop layer for the subsequent fabrication of through-hole structures within the adapter plate. This layer also prevents superconducting alloy from leaking out of the through-hole structures when the alloy is subsequently added. Photolithography is performed on the second surface of the adapter plate to form a through-hole pattern, thereby determining the position of each through-hole structure on the adapter plate. The adapter plate can be a silicon wafer, and the choice is not limited to this embodiment of the present invention.

[0098] For example, a silicon oxynitride film can be deposited using plasma-enhanced chemical vapor deposition (PECVD) to form an etch stop layer on the first surface of the interposer. The stoichiometric ratio of the silicon oxynitride needs to be optimized to minimize stress and wafer bow, reduce stress variations during etch stop layer removal, and enable easy removal using wet etching chemicals or high-selectivity dry etching.

[0099] For example, when performing photolithography, you can choose a photoresist with a thicker photoresist after molding, such as AX12XT-20PL-10. Photolithography can include steps such as pre-bake, HMDS coating, spread coating, pre-bake, exposure, mid-bake, development, spin drying, and post-bake.

[0100] S502, etching the second surface of the adapter plate based on the through-hole pattern to form through-holes in the adapter plate;

[0101] Specifically, the second surface of the adapter plate is etched based on the through-hole structure pattern to form through-holes that penetrate the adapter plate. A method such as Bosch deep silicon etching can be selected to prepare through-holes in the adapter plate. The number of through-holes in the adapter plate is set according to actual needs and is not limited in the embodiment of the present invention. The diameter of each through-hole and the pitch between adjacent through-holes are set according to actual needs and are not limited in the embodiment of the present invention.

[0102] S503, removing the photoresist on the second surface of the adapter plate;

[0103] Specifically, after forming the through hole in the adapter plate, the photoresist on the second surface of the adapter plate is removed. The photoresist on the second surface of the adapter plate can be completely removed by using high-power ultrasound in an acetone bath.

[0104] S504, depositing an insulating layer on the surface of the through hole of the adapter plate;

[0105] Specifically, when a non-insulating adapter plate substrate material is used, in order to ensure insulation between the superconducting metal column and the adapter plate, an insulating layer is deposited on the surface of the through hole of the adapter plate.

[0106] For example, a thin film growth technique capable of filling deep-hole structures is used to deposit a SiO2 film on the second surface of the adapter plate and the sidewalls of the through-holes to achieve good insulation between the adapter plate and the superconducting metal pillars. Other processes for depositing the insulating layer include atomic layer deposition (ALD), bias sputtering, and chemical vapor deposition (CVD).

[0107] S505 , depositing an adhesion layer on the insulating layer of the through hole of the adapter board to obtain the through hole structure of the adapter board.

[0108] Specifically, after the insulating layer is formed, an adhesive layer is deposited on the insulating layer of the through-holes of the adapter plate to secure the superconducting metal pillars within the through-hole structure. The adhesive layer can be made of a superconducting metal such as Ti. The material of the adhesive layer has a higher melting point than the superconducting metal used for the superconducting metal pillars.

[0109] For example, a thin film growth technique capable of filling deep-hole structures is used to deposit an adhesion layer on the insulating layer of the via to ensure good adhesion between the superconducting metal and the via structure. The adhesion layer can be deposited using processes such as atomic layer deposition, bias sputtering, and chemical vapor deposition.

[0110] Figure 6 FIG. 1 is a schematic diagram of a process for exposing the second end of a superconducting metal column according to a sixth embodiment of the present invention. Figure 6 As shown, based on the above embodiments, further, removing the etch stop layer of the second component included in the assembly to expose the second end of the superconducting metal column in each through-hole structure includes:

[0111] S601, etching the etch stop layer to expose the first surface of the adapter plate;

[0112] Specifically, the etch stop layer can be removed from the adapter plate by using a wet or dry etching method with a high selectivity ratio to expose the first surface of the adapter plate and the insulating layer on the side of the through hole structure close to the etch stop layer.

[0113] For example, the etch stop layer is a silicon oxynitride compound film, which can be etched using hydrofluoric acid.

[0114] S602 , etching the bottom insulating layer and the adhesion layer exposed by each through-hole structure on the first surface of the adapter plate to expose the second end of the superconducting metal column in each through-hole structure.

[0115] Specifically, after etching the etch stop layer, the bottom insulating layer and the adhesion layer remain within each through-hole structure. The bottom insulating layer and the adhesion layer are exposed by etching each through-hole structure on the first surface of the adapter plate, thereby exposing the second end of the superconducting metal pillar within each through-hole structure.

[0116] For example, when the insulating layer is a silicon dioxide film, hydrofluoric acid can also be used for etching.

[0117] Figure 7 FIG. 7 is a flow chart of an insert-type filling method for an adapter plate provided by a seventh embodiment of the present invention. Figure 7 As shown, based on the above embodiments, further, under preset conditions and based on the correspondence between the formed superconducting metal pillars and the through-hole structures, the first component and the second component are assembled so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer to obtain an assembly comprising:

[0118] S701, fixing the first component to a first chuck of an assembly device with the formed superconducting metal pillars included in the first component facing the through holes, and fixing the second component to a second chuck of the assembly device with the through hole structures included in the second component facing the superconducting metal pillars;

[0119] Specifically, the first and second components can be assembled using assembly equipment. The first component is secured to the first chuck of the assembly equipment by vacuum or mechanical clamping, and the second component is secured to the second chuck of the assembly equipment by vacuum or mechanical clamping. The formed superconducting metal pillars included in the first component face the through-holes, and the various through-hole structures included in the second component face the superconducting metal pillars. The formed superconducting metal pillars are aligned with the corresponding through-hole structures to facilitate subsequent insertion. The assembly equipment can use flip-chip bonding equipment.

[0120] S702, moving the first chuck downward so that the formed superconducting metal column is inserted into the corresponding through-hole structure until the surface of the sacrificial layer of the first component is in close contact with the second surface of the adapter plate of the second component, and the first chuck stops moving; wherein the first chuck applies a preset pressure;

[0121] Specifically, the first chuck is moved downward so that the formed superconducting metal column is inserted into the corresponding through-hole structure until the surface of the sacrificial layer of the first component is in close contact with the second surface of the adapter plate of the second component, and the movement of the first chuck is stopped. During the downward movement of the first chuck, a preset pressure can be applied to the first chuck so that the formed superconducting metal column can be inserted into the corresponding through-hole structure, so that the second end of the superconducting metal column is tightly pressed against the bottom insulating layer or superconducting alloy, and at the same time, the first end of the superconducting metal column can be pressed to be flush with the second surface of the adapter plate. The preset pressure is set according to actual needs and is not limited in the embodiment of the present invention.

[0122] In order to ensure that the superconducting metal column can be inserted into the through-hole structure and can be inserted to the bottom, the diameter of the superconducting metal column is smaller than the diameter of the through-hole structure, and the sum of the volumes of the superconducting metal column and the superconducting alloy is less than or equal to the volume that needs to be filled in the through-hole structure.

[0123] S703, heating the first chuck and / or the second chuck to melt the superconducting metal pillars formed in each through-hole structure;

[0124] Specifically, after the surface of the sacrificial layer of the first component is in contact with the second surface of the adapter plate of the second component, the first chuck and / or the second chuck can be heated to melt the superconducting metal pillars formed within the through-hole structure and bond with the adhesive layer on the sidewalls of the through-hole structure. Simultaneously heating the first and second chucks can shorten the melting time of the superconducting metal pillars.

[0125] S704 , keeping the first chuck stationary and stopping heating the first chuck and / or the second chuck until the superconducting metal in each through-hole structure solidifies.

[0126] Specifically, after the surface of the sacrificial layer of the first component is in contact with the second surface of the adapter plate of the second component, the first chuck is kept stationary and the heating of the first chuck and / or the second chuck is stopped to allow the liquid superconducting metal in each through-hole structure to solidify, so that the superconducting metal column can be welded to the adhesion layer in the through-hole structure, thereby avoiding the superconducting metal column from falling out or shifting in subsequent processes.

[0127] Based on the above embodiments, the aspect ratio of the through-hole structure, i.e., the ratio of the depth of the through-hole structure to its diameter, can be, for example, 5:1, 10:1, or 15:1. Based on the above embodiments, the superconducting metal pillars can be made of indium. Indium is soft and can achieve low-porosity filling of the through-hole structure under certain pressures.

[0128] In addition to the above embodiments, the superconducting alloy can be an indium tin alloy. InSn is a superconducting alloy, and its usage is much smaller than that of In, the superconducting metal pillar. Therefore, the physical properties of the filled through-hole structure are similar to those of pure indium, and will not significantly affect signal transmission quality.

[0129] Figure 8 FIG. 8 is a flow chart of a method for preparing a superconducting wiring layer of an adapter plate provided in an eighth embodiment of the present invention. Figure 8 As shown, based on the above embodiments, the plug-in filling method of the adapter plate provided in the embodiment of the present invention further includes:

[0130] S801, depositing superconducting metal materials on the insulating layers on the first surface and the second surface of the adapter plate, respectively, to obtain a first superconducting metal layer and a second superconducting metal layer;

[0131] Specifically, a superconducting metal material is deposited on the insulating layer on the first surface of the adapter plate to obtain a first superconducting metal layer, which is connected to the first end of each superconducting metal column. A superconducting metal material is deposited on the insulating layer on the second surface of the adapter plate to obtain a second superconducting metal layer, which is connected to the second end of each superconducting metal column. Various thin film growth processes can be selected to deposit the superconducting metal material on both sides of the adapter plate. The conductive material is selected based on actual needs and is not limited in the embodiments of the present invention.

[0132] It should be noted that an insulating layer has been prepared on the second surface of the adapter plate; for the first surface of the adapter plate, an insulating layer needs to be deposited first, and then windows are opened on the insulating layer to etch away the insulating layer at each through-hole structure to expose the second end of each superconducting metal column.

[0133] Furthermore, in order to flatten the surfaces of the first superconducting metal layer and the second superconducting metal layer, chemical mechanical polishing (CMP) may be used to process the surfaces of the first superconducting metal layer and the second superconducting metal layer to form smooth surfaces without obvious undulations.

[0134] S802. Form a first superconducting wiring layer on the first superconducting metal layer, and form a second superconducting wiring layer on the second superconducting metal layer; wherein the first superconducting wiring layer is used to connect the first ends of the respective superconducting metal pillars, and the second superconducting wiring layer is used to connect the second ends of the respective superconducting metal pillars.

[0135] Specifically, a first superconducting wiring layer can be formed on the first superconducting metal layer through an etching process, and a second superconducting wiring layer can be formed on the second superconducting metal layer through an etching process. The first superconducting wiring layer can be connected to the first ends of the superconducting metal pillars, respectively. The second superconducting wiring layer can be connected to the second ends of the superconducting metal pillars, respectively.

[0136] For example, the process of preparing a first superconducting wiring layer on the first superconducting metal layer through an etching process is as follows: photolithography is performed on the first superconducting metal layer to obtain a first superconducting etching pattern; the first superconducting metal layer is etched based on the first superconducting etching pattern to obtain a first superconducting wiring layer, that is, the first superconducting metal layer is etched based on the first superconducting etching pattern to obtain a first superconducting wiring layer on the first surface of the adapter plate, and the first superconducting wiring layer can be respectively connected to the second ends of each superconducting metal column; and the photoresist on the first superconducting wiring layer is removed.

[0137] The process of preparing the second superconducting wiring layer on the second superconducting metal layer by etching is similar to the process of preparing the first superconducting wiring layer on the first superconducting metal layer by etching, and will not be described in detail here.

[0138] The following takes filling a silicon adapter plate with a superconducting metal as an example to illustrate the specific implementation process of the insertion-type filling method of the adapter plate provided by the embodiment of the present invention.

[0139] The first step is to prepare a light-to-heat conversion sacrificial layer (LTHC) 2 on a bare glass sheet 1, such as Figure 9A shown.

[0140] In the second step, a layer of Ti and a layer of Cu are sequentially deposited on the LTHC2 as the convex electroplating support layer 3, as shown in FIG. Figure 9B The bump plating support layer 3 includes a bump plating adhesion layer 3-1 and a bump plating seed layer 3-2.

[0141] The third step is to perform thick resist photolithography on the convex plating support layer 3 to form an In convex dot pattern 4, such as Figure 9C shown.

[0142] The fourth step is to use an indium sulfamate plating solution system or other compatible plating solution system to electroplate In bumps 5 in the holes of the In bump pattern 4, and ensure that the height of the In bump 5 is flush with the photoresist, as shown in FIG. Figure 9D As shown in the figure, the photoresist selected is AX12XT-20PL-10.

[0143] Step 5: Based on the In bump 5 and In bump pattern 4 obtained last time, thick resist photolithography is performed to form In bump pattern 6, and In bump 7 is formed by electroplating in the hole of In bump pattern 6, so that the In bump 7 obtained by this electroplating is on the In bump 5 obtained last time, and the height of In bump 7 is ensured to be flush with the photoresist, as shown in FIG. Figure 9E shown.

[0144] Step 6: Repeat step 5 to continuously increase the height of the In column by multiple photolithography until the height of the In column reaches the preset height, and obtain multiple formed In columns 8, such as Figure 9F The diameter of the In column 8 may be greater than 1 micron, and the spacing between the various In columns may be greater than the diameter of a single In column.

[0145] Step 7: Use low-power ultrasound in an acetone bath to completely remove the multi-layer photoresist on the bump plating support layer 3, exposing the final formed indium column 8, and obtaining the first component, such as Figure 9G shown.

[0146] Step 8: A silicon oxide and nitrogen compound film is deposited on the first surface of the silicon wafer 9 using PECVD to obtain an etch stop layer 10, and a thick resist is photolithographically performed on the second surface of the silicon wafer to form a through hole pattern 11, as shown in FIG. Figure 9H shown.

[0147] In the ninth step, a plurality of through silicon vias 12 are obtained by deep silicon etching using the Bosch process based on the through hole pattern 11 on the second surface of the silicon wafer 9. Figure 9I shown.

[0148] Step 10: Use high-power ultrasound in an acetone bath to completely remove the photoresist on the second surface of the silicon wafer 9. Figure 9J shown.

[0149] Step 11: Using a thin film growth technology that can fill deep hole structures, a SiO2 film is deposited on the second surface of the silicon wafer 9 and on the hole walls of each silicon via 12 as an insulating layer 13 to obtain each silicon via structure, such as Figure 9K shown.

[0150] Step 12: Using a thin film growth technology that can fill deep hole structures, a layer of Ti is deposited on the insulating layer of the through silicon via 12 as an adhesion layer 14, such as Figure 9L shown.

[0151] Step 13: Assemble the first component and the second component using a flip-chip bonding device. Fix the first component to the first chuck of the assembly device, and fix the second component to the second chuck of the assembly device. Align the formed indium pillar 8 with the corresponding through-silicon via structure. Move the first chuck downward and apply a preset pressure to insert the formed indium pillar 8 into the corresponding through-silicon via structure. Figure 9M shown.

[0152] Step 14: When the convex electroplating support layer 3 of the first component is in close contact with the insulating layer 13 on the second surface of the silicon wafer 9 of the second component, the first chuck stops moving. After the first chuck stops moving, the first chuck and the second chuck are heated, and a temperature slightly higher than the melting point of indium (156°C), such as 160°C, is applied to melt the indium column 8 in the through silicon via structure, thereby obtaining a superconducting metal structure 15 in the through silicon via structure; the first chuck is kept stationary, and the heating of the first chuck and the second chuck is stopped, so that the molten indium in each through silicon via structure solidifies, thereby being able to weld the superconducting metal structure 15 in the through silicon via structure, as shown in FIG. Figure 9N shown.

[0153] It should be noted that if the indium column expands in volume after melting and overflows the through-hole structure, causing superconducting metal indium to solidify on the insulating layer 13 on the second surface of the silicon wafer 9, then after the superconducting metal indium column solidifies, CMP can be used to remove the insulating layer 13 and superconducting metal indium on the second surface of the silicon wafer 9, and then the insulating layer can be re-deposited and a window can be opened to expose one end of the superconducting metal indium, so as to obtain a smooth insulating layer 13 on the second surface of the silicon wafer 9 again.

[0154] Step 15: Laser irradiate the light-heat conversion sacrificial layer 2 through the glass sheet 1. The light-heat conversion sacrificial layer 2 will be converted into powder under the laser irradiation. Then remove the glass sheet 1. Figure 9O shown.

[0155] Step 16: Remove the residue of the photothermal conversion sacrificial layer 2 by chemical cleaning, and then use a chemical etching solution to remove the convex electroplating support layer 3 including the Ti layer and the Cu layer, and the planar Ti adhesion layer 14 on the second surface of the silicon wafer 9. Stop etching after the metallic color of Ti and Cu disappears, so that the first end of the indium column 8 in the silicon through hole is exposed. Figure 9P shown.

[0156] Step 17: Remove the etch stop layer 10. A chemical solution (such as HF acid) may be used to etch away the etch stop layer on the first surface of the silicon wafer, thereby exposing the first surface of the silicon wafer 9. Figure 9Q shown.

[0157] Step 18: Use hydrofluoric acid, ICP-F or RIE to remove the SiO2 16 and the adhesion layer Ti at the bottom of each through-silicon via structure, so that the second end of the superconducting metal structure 15 in each through-silicon via structure close to the first surface of the silicon wafer 9 is exposed. Figure 9R shown.

[0158] Step 19: Deposit SiO2 as an insulating layer 17 on the first surface of the silicon wafer 9. Figure 9S It is understood that the insulating layer 13 and the insulating layer 17 are connected.

[0159] Step 20: Open windows on the insulating layer 17 to etch away the insulating layer 17 region corresponding to each through-silicon via structure, and expose the second end of the superconducting metal structure 15 in each through-silicon via structure close to the first surface of the silicon wafer 9. Figure 9T shown.

[0160] Step 21: Superconducting metal materials are deposited on the insulating layer 17 on the first surface and the insulating layer 13 on the second surface of the silicon wafer 9, respectively, to obtain a first superconducting metal layer 19 and a second superconducting metal layer 18. The first superconducting metal layer 19 will be connected to the second end of each superconducting metal structure 15, and the second superconducting metal layer 18 will be connected to the first end of each superconducting metal structure 15. Figure 9U shown.

[0161] Step 22: CMP is used to flatten the surface of the first superconducting metal layer 19 to form a smooth surface. Figure 9V shown.

[0162] Step 23: Photolithography is performed on the first superconducting metal layer 19 to form a first superconducting etching pattern on the first superconducting metal layer 19. Photolithography is performed on the second superconducting metal layer 18 to form a second superconducting etching pattern on the second superconducting metal layer 18. The first superconducting metal layer 19 is etched based on the first superconducting etching pattern to obtain a first superconducting wiring layer 21 on the insulating layer 17 on the first surface of the adapter plate. The first superconducting wiring layer 21 can respectively connect the second ends of each superconducting metal structure 15. The second superconducting metal layer 18 is etched based on the second superconducting etching pattern to obtain a second superconducting wiring layer 20 on the insulating layer 17 on the first surface of the adapter plate. The second superconducting wiring layer 20 can respectively connect the first ends of each superconducting metal structure 15, as shown in FIG. Figure 9W shown.

[0163] Due to the soft nature of indium, the fabrication of superconducting vias in the aforementioned silicon adapter plate enables low-porosity filling of TSVs under a certain pressure. Furthermore, this eliminates the need for developing complex superconducting metal plating solutions containing accelerators, inhibitors, and levelers for high-aspect-ratio TSVs. Once the superconducting metal pillars and TSVs are fabricated, the entire process of alignment, pressurization, and low-temperature reflow can be accomplished using commonly used flip-chip bonding equipment, enabling integrated molding and significantly reducing process costs.

[0164] It should be noted that: (1) the preparation of various film layers in this application can be replaced by common material growth technologies such as sputtering, CVD, PVD, ALD, electroplating, and chemical plating that are compatible with the application scenarios; (2) various grooves, holes, and protrusion structures can be replaced by compatible additive and subtractive processes, such as machining, dry etching, wet etching, the material growth process in (1), 3D printing, and other common technologies in the industry; (3) the materials that undertake the planar electrical interconnection function and the sidewall adhesion layer can be replaced by other materials with superconducting properties, such as TiN, Al, Ti, W, Ru, AlCu, In, Nb, Ta, NbN, and NbTiN-based materials.

[0165] Throughout this specification, reference to terms such as "one embodiment," "a specific embodiment," "some embodiments," "for example," "example," "specific example," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0166] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for inserting and filling an adapter plate, characterized in that: include: A superconducting metal column is formed based on a temporary carrier to obtain a first component; wherein the first component includes the formed superconducting metal column and a sacrificial layer; Preparing a through-hole structure based on the adapter plate to obtain a second component; wherein the second component includes an adhesion layer deposited on the sidewalls of each through-hole structure and an etch stop layer is provided on one side surface of the adapter plate; Under preset conditions, based on the corresponding relationship between the formed superconducting metal pillars and the through-hole structures, assembling the first component and the second component so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer to obtain an assembly; removing a sacrificial layer of a first component included in the assembly to expose first ends of superconducting metal pillars within each via structure; The etch stop layer of the second component included in the assembly is removed to expose the second ends of the superconducting metal pillars within each via structure.

2. The method according to claim 1, characterized in that The superconducting metal column formed based on the temporary carrier is prepared to obtain the first component, comprising: forming a sacrificial layer on the surface of the temporary carrier, wherein the sacrificial layer comprises a temporary bonding material layer, a bump electroplating adhesion layer and a bump electroplating seed layer; growing a superconducting metal column on the bump electroplating seed layer by multiple photolithography and electroplating until the total height of the superconducting metal column reaches a preset height; The photoresist is removed and the formed superconducting metal pillars are exposed.

3. The method according to claim 2, characterized in that The superconducting metal pillars are grown on the support layer by photolithography and electroplating each time including: Performing photolithography on the support layer to form a superconducting metal bump pattern; Electroplating to form superconducting metal bumps in the holes of the superconducting metal bump pattern, and ensuring that the difference between the height of the superconducting metal bumps and the thickness of the photoresist is within a preset range; The supporting layer of the first photolithography is the bump electroplating seed layer; starting from the second photolithography, the supporting layer is a mixed layer composed of the superconducting metal column obtained in the previous photolithography and the photoresist.

4. The method according to claim 2, characterized in that The multiple photolithography processes are 2 or more photolithography processes.

5. The method according to claim 2, characterized in that The step of removing the sacrificial layer of the first component of the assembly to expose the first ends of the superconducting metal pillars in the respective through-hole structures comprises: removing the temporary slide; removing residues of the temporary bonding material layer; The bump plating seed layer is etched to expose the first end of the superconducting metal pillar in each through-hole structure.

6. The method according to claim 1, characterized in that The method of preparing a through-hole structure based on the adapter plate to obtain a second component includes: growing an etch stop layer on the first surface of the adapter plate, and performing photolithography on the second surface of the adapter plate to form a through-hole pattern; etching the second surface of the adapter plate based on the through-hole pattern to form through-holes in the adapter plate; removing the photoresist on the second surface of the adapter plate; Depositing an insulating layer on the surface of the through-hole structure of the adapter plate; An adhesion layer is deposited on the insulating layer of the through hole of the adapter board to obtain the through hole structure of the adapter board.

7. The method according to claim 6, characterized in that The step of removing the etch stop layer of the second component of the assembly to expose the second end of the superconducting metal pillar in each via structure comprises: Etching the etch stop layer to expose the first surface of the adapter plate; The bottom insulating layer and the adhesion layer exposed by each through-hole structure on the first surface of the adapter plate are etched to expose the second end of the superconducting metal column in each through-hole structure.

8. The method according to claim 1, characterized in that The step of assembling the first component and the second component under preset conditions based on the corresponding relationship between the formed superconducting metal pillars and the through-hole structures so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer to obtain an assembly includes: Fixing the first component to a first chuck of a bonding assembly device with the formed superconducting metal pillars of the first component facing the through holes, and fixing the second component to a second chuck of the assembly device with the through hole structures of the second component facing the superconducting metal pillars; Moving the first chuck downward so that the formed superconducting metal column is inserted into the corresponding through-hole structure until the surface of the sacrificial layer of the first component is in close contact with the second surface of the adapter plate of the second component, and the first chuck stops moving; wherein a preset pressure is applied to the first chuck; heating the first chuck and / or the second chuck to melt the superconducting metal pillars formed in each through-hole structure; The first chuck is kept stationary and heating of the first chuck and / or the first chuck is stopped until the superconducting metal in each through-hole structure is solidified.

9. The method according to claim 1, characterized in that The superconducting metal column is made of indium or indium-based superconducting alloy.

10. The method according to claim 1, characterized in that Also includes: Before obtaining the assembly, a superconducting alloy of preset size is placed in the through-hole structure of the second component; accordingly, under preset conditions and based on the corresponding relationship between the formed superconducting metal pillars and the through-hole structures, the first component and the second component are assembled so that the formed superconducting metal pillars are inserted into the corresponding through-hole structures and fixed by the adhesive layer, including: The superconducting alloy in the through-hole structure of the second component is heated so that the melted superconducting alloy welds and fixes the formed superconducting metal column to the adhesion layer; wherein the heating temperature is higher than the melting point of the superconducting alloy and lower than the melting point of the superconducting metal column.

11. The method according to any one of claims 1 to 10, characterized in that Also includes: Depositing superconducting metal materials on the insulating layers on the first surface and the second surface of the adapter plate respectively to obtain a first superconducting metal layer and a second superconducting metal layer; A first superconducting wiring layer is formed on the first superconducting metal layer, and a second superconducting wiring layer is formed on the second superconducting metal layer; wherein the first superconducting wiring layer is used to connect the first ends of each superconducting metal column, and the second superconducting wiring layer is used to connect the second ends of each superconducting metal column.

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