Electronic equipment and working method thereof

Abstract

Provided is an electronic device that is compact and has good visibility. A watch-type electronic device includes a display panel disposed in a region surrounded by a case and a bezel, and an optical device, one element such as a reflective polarizer included in the optical device being fixed to the bezel. The reflection effect and the transmission effect of light in the optical device can be changed by rotating the element fixed on the bezel, and a mode in which the display of the display panel can be watched at a long distance and a mode in which the display of the display panel can be watched at a short distance can be switched.

Description

Technical Field

[0001] One embodiment of the present invention relates to an electronic device and an operating method thereof.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product, or a composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a storage device, a storage device, an imaging device, a method for operating these devices, or a method for manufacturing these devices can be cited.

[0003] Note that in this specification and other publications, the term "semiconductor device" refers to any device that can operate by utilizing semiconductor characteristics. Transistors and semiconductor circuits are examples of semiconductor devices. Storage devices, display devices, imaging devices, and electronic devices may also include semiconductor devices. Background Art

[0004] Smartwatches are becoming increasingly common as wearable devices, and goggles and glasses have been developed as electronic devices for use in virtual reality (VR) and augmented reality (AR).

[0005] Typical examples of display devices applicable to these devices include display devices including liquid crystal elements, and display devices including organic EL (Electro Luminescence) elements or light emitting diodes (LEDs).

[0006] Since a display device including an organic EL element does not require a backlight source as is required for a liquid crystal display device, a thin, lightweight, high-contrast, and low-power display device can be realized. For example, Patent Document 1 discloses an example of a display device using an organic EL element. [Prior technical literature] [Patent Document]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2018-107444 Summary of the Invention Technical problem to be solved by the invention

[0008] Smartwatches are compact yet convenient, offering access to a wide range of information. However, since they are worn on the wrist, their displays are often smaller than two inches in diagonal or diameter. Therefore, in order to display multiple pieces of information simultaneously, text size must be reduced, leading to reduced visibility.

[0009] Electronic devices used in VR and AR are wearable devices that can provide a wealth of information, including images, with high visibility. However, these devices are bulky and cumbersome to wear on the head.

[0010] Therefore, one object of one embodiment of the present invention is to provide a small electronic device with good visibility. Another object of one embodiment of the present invention is to provide an electronic device that can switch between a long-distance viewing mode and a close-up viewing mode. Another object of one embodiment of the present invention is to provide an electronic device that is small, lightweight, and can be easily worn on or removed from the body. Another object of one embodiment of the present invention is to provide a novel electronic device. Another object of one embodiment of the present invention is to provide an operating method of the above-mentioned electronic device.

[0011] Note that the inclusion of these objectives does not preclude the existence of other objectives. Note that one embodiment of the present invention does not necessarily achieve all of the aforementioned objectives. Note that objectives other than those listed above can be understood and extracted from the description of the specification, drawings, claims, etc. Means of solving technical problems

[0012] One embodiment of the present invention relates to a compact electronic device with good visibility.

[0013] One embodiment of the present invention is a watch-type electronic device, including a case, a bezel, a display panel and an optical device. The display panel and the optical device are arranged in an area surrounded by the case and the bezel. Light emitted by the display panel can be emitted through the optical device. The first element included in the optical device is fixed to the bezel. By rotating the bezel, the display of the display panel can be switched between a first mode in which the display can be viewed from a distance and a second mode in which the display can be viewed from a close distance.

[0014] The optical device includes a first circular polarizer, a half mirror and a second circular polarizer. The half mirror is arranged between the first circular polarizer and the second circular polarizer. The half mirror has a curved surface with one side of the second circular polarizer being concave. The second circular polarizer is arranged on one side of the bezel.

[0015] The first circular polarizer may include a linear polarizer and a first retardation plate, and the second circular polarizer may include a second retardation plate and a reflective polarizer. The reflective polarizer is preferably the first element.

[0016] Preferably, the half mirror is interposed between the second element and the third element, and the difference between the refractive index of the second element and the refractive index of the third element is 0.3 or less.

[0017] It is preferable that both the surface of the second element opposite to the half mirror and the surface of the third element opposite to the half mirror are flat surfaces.

[0018] In the above, the rotation angle of the bezel is preferably 90°.

[0019] The display panel preferably includes an organic EL element.

[0020] In addition, one embodiment of the present invention is a method for operating a watch-type electronic device including a display panel, which can switch between a first mode for viewing from a distance and a second mode for viewing from a close distance. In the first mode, image signals are input to some pixels included in the display panel, and in the second mode, image signals are input to all pixels included in the display panel.

[0021] The first mode and the second mode can be switched by rotating an element of the optical device fixed to the bezel. Effects of the Invention

[0022] According to one embodiment of the present invention, a small electronic device with good visibility can be provided. Furthermore, according to one embodiment of the present invention, an electronic device capable of switching between a long-distance viewing mode and a close-up viewing mode can be provided. Furthermore, according to one embodiment of the present invention, a small, lightweight electronic device that can be easily worn or removed from the body can be provided. Furthermore, according to one embodiment of the present invention, a novel electronic device can be provided. Furthermore, according to one embodiment of the present invention, a method for operating the above-mentioned electronic device can be provided.

[0023] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a diagram illustrating an electronic device. Figure 2A 1 is a diagram illustrating how an electronic device is viewed in a distance mode. Figure 2B FIG. 1 is a diagram showing an example of a display of an electronic device in a long-distance mode. Figure 3A 3 is a diagram showing how an electronic device is viewed in close proximity mode. Figure 3B FIG. 1 is a diagram showing an example of a display of an electronic device in a close-range mode. Figure 4A and Figure 4B This is a diagram illustrating an optical device. 5A to 5I It is a diagram illustrating the configuration of elements included in the optical unit. Figure 6A This is a diagram illustrating an electronic device. Figure 6B This is a diagram illustrating an optical device. Figure 7A This is a diagram illustrating an electronic device. Figure 7B This is a diagram illustrating an optical device. Figures 8A to 8C This is a diagram illustrating an optical device. Figures 9A to 9E It is a diagram illustrating a display device. 10A to 10C A diagram illustrating a structural example of a display panel. Figure 11A and Figure 11B A diagram illustrating a structural example of a display panel. 12A to 12F A diagram illustrating an example of the structure of a pixel. 13A to 13C This is a diagram illustrating a pixel driving mode. Figure 14A and Figure 14B A diagram illustrating a structural example of a display panel. Figure 15 A diagram illustrating a structural example of a display panel. Figure 16 A diagram illustrating a structural example of a display panel. Figure 17 A diagram illustrating a structural example of a display panel. Figure 18 A diagram illustrating a structural example of a display panel. Figure 19 A diagram illustrating a structural example of a display panel. Figure 20 A diagram illustrating a structural example of a display panel. Figure 21A and Figure 21B A diagram illustrating a vertical transistor. Figure 22A and Figure 22B A diagram illustrating a vertical transistor. Modes for Carrying Out the Invention

[0025] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand the fact that its methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below. Note that in the structure of the invention described below, the same figure marks are used in different drawings to represent the same parts or parts with the same functions, and their repeated descriptions are omitted. Note that the shading of the same components is sometimes appropriately omitted or changed in different drawings.

[0026] Furthermore, even if a single element is shown on a circuit diagram, it can be constructed using multiple elements if functionally acceptable. For example, multiple transistors used as switches can be connected in series or in parallel. Furthermore, capacitors can be split and placed in multiple locations.

[0027] In addition, a single conductor may have multiple functions, such as wiring, electrode, and terminal. In this specification, multiple names may be used for the same element. Furthermore, even if a circuit diagram shows direct connections between elements, these elements may actually be connected via more than one conductor. This specification also includes such structures within the scope of direct connections.

[0028] (Implementation 1) In this embodiment, an electronic device according to one embodiment of the present invention is described.

[0029] One embodiment of the present invention is a wristwatch-type electronic device. The electronic device includes a display panel and an optical device disposed in an area surrounded by a watch case and a bezel. The first element of the optical device is fixed to the bezel, and the bezel can be rotated to switch between a mode in which the display panel's display can be viewed from a distance (hereinafter referred to as a "distant mode") and a mode in which the display panel's display can be viewed from a close distance (hereinafter referred to as a "close mode").

[0030] Figure 2A 1 is a diagram showing how the electronic device 10 is viewed in the telescopic mode. Figure 2B 1 is a diagram showing an example of the display of electronic device 10 in remote mode. Remote mode is a mode in which the user views the display from a distance of several tens of centimeters, like looking at a watch. This mode is suitable for checking simple information such as time, medical and health information, and notifications from a smartphone.

[0031] Figure 3A 1 is a diagram showing how the electronic device 10 is viewed in the close-up mode. Figure 3BThis figure shows an example of the display of electronic device 10 in close-up mode. Close-up mode is a mode in which the distance between the eye and the optical device is shortened, as in VR goggles. This mode is suitable for viewing large amounts of information, such as images or long text. When using close-up mode, visual information that is difficult to view in long-distance mode can be viewed with high visibility. Note that close-up mode is a monocular viewing mode, and either the left or right eye can be used.

[0032] Thus, by using one embodiment of the present invention, the viewing mode can be switched, thereby providing a compact electronic device with good visibility.

[0033] Figure 1 This figure illustrates electronic device 10. Electronic device 10 is a watch-type device and includes a case 11, a bezel 12, a crystal 13, and a strap 14. Here, the case is a container that houses the display panel, optical components, battery, and various circuit components of the electronic device, and includes a connection portion for the strap. Furthermore, the bezel is an annular component superimposed on the case. The crystal is a transparent component that protects the components housed in the case and is fixed to the bezel or case.

[0034] In one embodiment of the present invention, the bezel 12 is not fixed to the watch case 11 and can rotate clockwise or counterclockwise when viewed from above. Note that the bezel 12 can be said to be fixed to the watch case 11 via a rotating mechanism. Furthermore, the rotating mechanism can be provided as an independent element or as part of the bezel 12 or the watch case 11.

[0035] In addition, the bezel 12 is fixed to one or more elements included in the optical device. In other words, the bezel 12 can be rotated to rotate some elements included in the optical device, thereby switching the function of the optical device.

[0036] Note that the case and bezel are described here as separate elements, but they can also be referred to as a case or outer shell as a whole, and the upper part of the case or outer shell has a rotating mechanism. In addition, the rotation of the bezel is not limited to manual rotation, and can also be powered by an engine or the like. In this case, the rotation operation instruction can also be issued from the outside (smartphone or remote control, etc.). In addition, a mechanism such as a spring can be provided to return to the initial position from the rotation position with a single touch.

[0037] Figure 4A This figure illustrates the display panel and optical devices arranged in the area surrounded by the watch case 11 and the bezel 12. Note that elements other than the display panel and optical devices (battery, circuit components, etc.) are omitted from illustration.

[0038] The display panel 30 and the optical device are arranged so that light emitted from the display panel 30 is transmitted through the optical device to the bezel side (the side of the mirror 13). The basic structure of the optical device is an optical system that utilizes reflection, which can be used in VR devices, etc., and has a thin shape, so it is sometimes called a pancake lens.

[0039] This structure allows viewing the display panel 30 while the viewing angle is enlarged by the optical device (increased magnification), allowing for a wider range of information to be viewed (near-distance mode). Furthermore, by rotating some elements of the optical device, light emitted from the display panel 30 can be directed substantially straight without reflection within the optical device. This allows viewing of the display panel 30 at full or reduced magnification (telephoto mode).

[0040] The display surface of the display panel 30 is configured to intersect perpendicularly with the optical axis of the optical device and to have an area overlapping the optical device. Note that "perpendicular" refers to a state in which two straight lines form an angle of at least 85° and at most 95°. Here, one of the two straight lines refers to the optical axis of the optical device, and the other refers to a line parallel to the display surface (display portion).

[0041] The optical device has a structure in which a linear polarizing plate 32, a phase difference plate 33, an optical unit 45, a phase difference plate 53, and a reflective polarizing plate 54 are arranged in this order in an overlapping manner, and is arranged inside the case 11 and the bezel 12 in such a manner that the reflective polarizing plate 54 is located on the side of the bezel 12. Note that Figure 4A Although an example is shown in which the linear polarizing plate 32 is provided close to the display panel 30 , the linear polarizing plate 32 may also be provided close to the phase difference plate 33 .

[0042] Note that the combination of the linear polarizing plate 32 and the phase difference plate 33 is also called a circular polarizing plate that converts unpolarized light into circularly polarized light. In addition, the combination of the phase difference plate 53 and the reflective polarizing plate 54 is also called a circular polarizing plate or a reflective circular polarizing plate.

[0043] Furthermore, a reflective polarizing plate 54 can be fixed to the bezel 12. Furthermore, a mirror 13 is provided on the light-emitting side of the reflective polarizing plate 54. For example, a glass substrate, resin substrate, or ceramic substrate with high visible light transmittance can be used as the mirror 13. Furthermore, the mirror 13 can also function as a convex lens. This convex lens function of the mirror 13 allows for magnified viewing of the display even in telephoto mode.

[0044] In addition, a solar cell with high light transmittance to visible light can also be used as the watch mirror 13. Alternatively, the solar cell can be set on one of the front and back sides of the watch mirror 13. As the solar cell, a solar cell in which a photoelectric conversion layer is formed using materials such as organic semiconductors, perovskites, disulfide compounds, amorphous silicon or CIGS (Cu-In-Ga-Se) can be used. It is preferred that the material itself has light transmittance, but the light transmittance can also be improved by thin filming. In addition, the light transmittance can also be improved by processing it into a linear or island shape. The electricity generated by the solar cell can be charged in a secondary battery, thereby extending the working time of the electronic device.

[0045] The optical unit 45 has a structure in which a layer 52 serving as a half mirror is sandwiched between elements 41 and 42 . Figure 4B This is a cross-sectional view of the magnifying optical unit 45 and a portion thereof. Layer 52 has a curved surface with the phase difference plate 53 side being concave. Elements 41 and 42 can be formed using a material with high transmittance for visible light, such as glass or resin. Furthermore, elements 41 and 42 can be formed using the same material or materials with similar refractive index values. Layer 52 can be formed using either or both a metal and a dielectric.

[0046] This structure can eliminate or reduce the difference in refractive index between the optical paths before and after the transmissive layer 52, thereby allowing light passing through the optical unit 45 to travel substantially straight. Alternatively, the refraction of light passing through the optical unit 45 can be reduced.

[0047] If there is a difference in refractive index between the optical paths before and after the half mirror, light other than that at normal incidence will be refracted. If the light passing through the half mirror is polarized light, the polarization state may be collapsed due to refraction, which can easily generate stray light.

[0048] Note that stray light refers to light that deviates from the normal optical path. In electronic devices, stray light overlaps with the light that makes up the normal image, contributing to a decrease in visual display quality. Because stray light appears in unintended locations, it is sometimes referred to as ghosting.

[0049] Furthermore, in order to view the display panel 30 at full magnification in telephoto mode, it is preferable to make the light passing through the optical unit 45 travel substantially straight. Furthermore, in order to view the display panel 30 at low magnification in telephoto mode, it is preferable to reduce the refraction of the light passing through the optical unit 45.

[0050] Note that an optical adhesive may be provided between element 41 and layer 52, and between element 42 and layer 52. As the optical adhesive, a material having a refractive index equal to or close to that of element 41 and element 42 is preferably used. Alternatively, a material having a refractive index between the refractive indices of element 41 and element 42 is preferably used.

[0051] Here, consider the following case: without element 41, layer 52 only acts to attenuate the light intensity, and light passes through air (refractive index n a =1) is incident on the element 42. Assuming that the element 42 is glass or resin, its refractive index n 42 Since the difference in refractive index is about 1.4 to 2.0, it is not less than 0.4, so the element 42 functions as a lens and the light is refracted.

[0052] Therefore, in order to make the light incident on the optical unit 45 go straight or reduce its refraction, the refractive index n of the element 41 is set to 41 and the refractive index n of element 42 42 The difference is 0.3 or less, preferably 0.2 or less, and more preferably 0.1 or less.

[0053] Furthermore, the optical unit 45 needs to function in a light-collecting manner in the close-up mode, and therefore needs to combine elements such as a convex lens or a concave mirror so as to have positive refractive power as a whole.

[0054] exist Figure 4A and Figure 4B The structure shown shows an example in which the incident and emitting surfaces of the optical element 45 are flat. When the refractive indexes of elements 41 and 42 of this structure are equal, elements 41 and 42 do not function as lenses, and thus can be said to be suitable for telephoto mode. Note that as long as the curvature of the reflective surface of layer 52 is increased and the optical element 45 as a whole has positive optical power, elements 41 and 42 are not limited to Figure 4A and Figure 4B Furthermore, by using the optical unit 45 as a lens, the display can also be magnified and viewed in telephoto mode.

[0055] 5A to 5I The following shows typical forms of elements 41 and 42 applicable to the optical unit 45. Figure 4A and Figure 4B The optical unit 45 shown is equivalent to Figure 5E .

[0056] Table 1 shows 5A to 5I The respective configurations of elements 41 and 42 are shown. Note that Table 1 shows configurations that function as lenses; depending on the combination of elements 41 and 42, they may not function as lenses. Even in combinations of elements 41 and 42 with negative power, low positive power, or no power, increasing the curvature of layer 52 allows the optical element 45 as a whole to have a high positive power. Furthermore, configurations other than those shown in Table 1 are also possible, as long as increasing the curvature of layer 52 can achieve positive power.

[0057] [Table 1]

[0058] 5A to 5I Each of the optical units 45 shown has the following features, which can be appropriately selected according to the application.

[0059] As an indicator of field curvature, there is the Petzval sum calculated from the refractive index and focal length of each lens (element 41, element 42). When the Petzval sum is 0, the image field becomes flat, and thus the lens system has excellent characteristics. In order to meet this condition, the refractive index or focal length needs to be negative, but the refractive index will not become negative, so it is preferable to use a concave lens with a negative focal length. Therefore, it can be said that it is preferable to use a lens with a negative focal length. Figure 5A 、 Figure 5B 、 Figure 5C 、 Figure 5F and Figure 5I The optical unit 45 of any structure is used to suppress the image field curvature.

[0060] Since refraction is accompanied by chromatic aberration, it is effective to combine positive and negative optical powers when correcting chromatic aberration. Even if the incident surface is a plane, chromatic aberration will occur as long as the light rays are not parallel. Therefore, a combination of surfaces (convex and concave) that can correct each other is advantageous. Therefore, it can be said that it is preferable to use a lens with Figure 5A 、 Figure 5B 、 Figure 5F 、 Figure 5I The optical unit 45 of any structure is used to suppress chromatic aberration.

[0061] In simple terms, the greater the positive power, the shorter the focal length, and thus the smaller the entire optical system. In the optical unit 45, most of the positive power is composed of a half mirror (the reflective surface of the layer 52), but the focal length can be further shortened when it has a convex surface. Therefore, it can be said that it is preferable to use a lens having a convex surface. Figure 5A 、 Figure 5D 、 Figure 5G 、 Figure 5H 、 Figure 5I The optical unit 45 of any structure is used to maximize the positive optical power.

[0062] The optical system using circularly polarized light in one embodiment of the present invention requires a phase difference plate. Considering that the phase difference plate is in the form of a thin film and is directly attached to the optical unit 45, the adhesive surface is preferably flat. Therefore, from the perspective of ease of manufacture, it can be said that it is preferable to use a phase difference plate having a Figure 5D 、 Figure 5E 、 Figure 5F 、 Figure 5I An optical unit 45 of any structure in.

[0063] Next, refer to Figure 6A 、 Figure 6B as well as Figure 7A 、 Figure 7B The function of the optical device as a whole and the function of each element according to one embodiment of the present invention will be described. Figure 4A shows an example of several elements close to each other, but Figure 6A 、 Figure 6B as well as Figure 7A 、 Figure 7B As shown, the effects of one embodiment of the present invention can also be obtained by separately configuring the elements included in the optical device.

[0064] Note that in order to achieve the above-described structure where one element is close to another, it is preferable to bond the elements together using an optical adhesive that has high transmittance for the wavelength of light being used (e.g., the visible light wavelength range or the blue to red light wavelength range) and does not absorb or birefringent light of a specific polarization. Alternatively, it is possible to form an element in contact with another element by coating, rather than bonding. Alternatively, it is possible to place one element in contact with another element without placing an adhesive between them. Alternatively, a gap may be provided between the two elements.

[0065] First, refer to Figure 6A and Figure 6B The function of the optical device in close-range mode will be described. Note that one embodiment of the present invention is a watch-type electronic device, and therefore assumes that it is primarily used in long-range mode (normally), switching to close-range mode as needed. However, since the basic structure of the optical device is that of the close-range mode, the close-range mode will be described first.

[0066] In addition, as described above, the viewing mode can be switched by rotating the bezel 12 when looking down. Here, when the bezel 12 is at the reference position (0°), it can be switched to the telephoto mode, and when the rotation angle is 90°, it can be switched to the close-up mode.

[0067] Note that when the reflective polarizer 54 is fixed to the bezel 12, the reflective polarizer 54 can be rotated by -90° (270°) to switch to the close-range mode. Furthermore, when the reference position is 0°, 180° can also be considered the reference position.

[0068] Figure 6A 1 is a diagram showing the electronic device 10 in a close-range mode in which the bezel 12 is rotated 90° from the reference position (0°). Figure 6B : is a cross-sectional view illustrating the function of the optical device in close range mode. Figure 6B In FIG, a portion of the light path is indicated by a dotted line.

[0069] Part of the light emitted from the display panel 30 passes through the linear polarizer 32, the retardation plate 33, the optical unit 45 (element 41, layer 52 (half mirror), element 42), and the retardation plate 53, and is reflected by the reflective polarizer 54. The light reflected by the reflective polarizer 54 passes through the retardation plate 53 and the element 42, and is then reflected by the layer 52. The light reflected by the layer 52 passes through the element 42, the retardation plate 53, and the reflective polarizer 54, and is focused and incident on the eye 20.

[0070] In this way, by repeating reflections in the optical device, the optical path length can be ensured, and thus an optical system with a short focal distance can be realized.

[0071] As the display panel 30, a liquid crystal panel including liquid crystal elements, an organic EL panel including organic EL elements, or an LED panel including Micro LEDs can be used. In particular, a self-luminous organic EL panel that can easily form a high-definition display portion is preferably used. Note that in this specification, Micro LED refers to a chip area of 10000μm 2 The following light-emitting diodes. In addition, in LED panels, it is not limited to Micro LEDs, for example, LEDs with chip areas larger than 10,000 μm can also be used. 2 and 1mm 2 The following light-emitting diodes (also called Mini LEDs)

[0072] The linear polarizer 32 can extract a single linearly polarized light from light that vibrates in all directions over 360°. Note that in this embodiment, the transmission axis of the linear polarizer 32 is described as 0°. However, 0° is not an absolute value but a reference value. That is, the plane of polarization of the linearly polarized light extracted by the linear polarizer 32 is assumed to be 0°. Therefore, for example, 90° linearly polarized light in this embodiment refers to linearly polarized light extracted by the linear polarizer 32 with its plane of polarization rotated 90°.

[0073] The phase difference plate 33 has the function of converting linearly polarized light into circularly polarized light. Here, a λ / 4 plate (1 / 4 wave plate) is used as the phase difference plate 33. The λ / 4 plate is overlapped on the linear polarizer 32 in such a way that the angle between the slow axis of the λ / 4 plate and the axis of the linear polarized light emitted from the linear polarizer 32 is 45°, thereby becoming right-handed circularly polarized light (right circularly polarized light). In addition, the λ / 4 plate is overlapped on the linear polarizer 32 in such a way that the angle between the slow axis of the λ / 4 plate and the axis of the linear polarized light emitted from the linear polarizer 32 is 135° (-45°), thereby becoming left-handed circularly polarized light (left circularly polarized light). In one embodiment of the present invention, as long as the combination with the characteristics of the reflective polarizer 54 described later is appropriate, right circularly polarized light or left circularly polarized light can be used. Here, the slow axis of the phase difference plate 33 is configured in such a way that the angle between the slow axis of the λ / 4 plate and the axis of the linear polarized light (0°) is 45°.

[0074] The optical unit 45 can be described above. The layer 52 is used as a concave mirror with positive optical power, which can magnify the display of the display panel 30.

[0075] The phase difference plate 53 has the function of reversibly converting linearly polarized light and circularly polarized light. As with the phase difference plate 33, a λ / 4 plate (1 / 4 wave plate) can be used as the phase difference plate 53. When the slow axis of the phase difference plate 33 is configured at 45°, the phase difference plate 53 is configured at 135°.

[0076] The reflective polarizer 54 transmits linearly polarized light whose vibration direction coincides with the transmission axis and reflects linearly polarized light whose vibration direction is perpendicular to the transmission axis. Examples of reflective polarizers include wire grid polarizers and dielectric multilayer films. Here, the reflective polarizer is configured so that the reflection axis is at 0° and the transmission axis is at 90°.

[0077] Note that a lens having the function of magnifying the display on the display panel 30 may also be provided as another element. This lens may use a lens with positive optical power. The lens is not limited to one, and a plurality of lenses may be combined. For example, a structure may be adopted in which a lens selected from a biconvex lens, a plano-convex lens, a biconcave lens, a plano-concave lens, a convex meniscus lens, and a concave meniscus lens is combined. In addition, the lens is not limited to a spherical lens, and an aspherical lens may also be used.

[0078] use Figure 6B The optical paths shown illustrate the details of the polarization states of the above-mentioned optical devices.

[0079] Light emitted from the display panel 30 and vibrating in all directions of 360° is incident on the linear polarizing plate 32. The transmission axis of the linear polarizing plate 32 is 0°, and 0° linearly polarized light is emitted from the linear polarizing plate 32.

[0080] The 0° linearly polarized light emitted from the linear polarizer 32 is converted into right-handed circularly polarized light by the phase plate 33. The right-handed circularly polarized light emitted from the phase plate 33 passes through the optical unit 45 and enters the phase plate 53, where it is converted into 0° linearly polarized light. The 0° linearly polarized light emitted from the phase plate 53 is reflected by the reflective polarizer 54, whose reflection axis is 0°, and enters the phase plate 53, where it is converted into right-handed circularly polarized light.

[0081] The right-handed circularly polarized light emitted from the retardation plate 53 passes through the element 42, is reflected by the layer 52, and is inverted into left-handed circularly polarized light with the opposite rotational direction. The left-handed circularly polarized light inverted by the layer 52 passes through the element 42 and enters the retardation plate 53, where it is converted into 90° linearly polarized light. The 90° linearly polarized light emitted from the retardation plate 53 passes through the reflective polarizer 54, whose transmission axis is 90°, and enters the eye 20.

[0082] Thus, by utilizing linearly polarized light and circularly polarized light, the half mirror (layer 52) and the reflective polarizer, selective reflection and transmission can be achieved. This ensures an optical path length within a limited space and shortens the focal length of the optical device.

[0083] Note that, in the above description, an example in which right circularly polarized light is used as the light incident on the optical unit 45 is described, but left circularly polarized light may also be used.

[0084] The above is an explanation of the function of the optical device in the close-range mode.

[0085] Next, the operation of the optical device in telephoto mode will be described. Figure 7A 1 is a diagram showing the electronic device 10 in the telephoto mode with the bezel 12 at the reference position (0°). Figure 7B is a cross-sectional view illustrating the operation of the optical device in telephoto mode. Figure 7B In FIG, a portion of the light path is indicated by a dotted line.

[0086] The optical device components are the same as those in the close-range mode. However, since the bezel 12 is at the reference position (0°), the reflective polarizer 54 fixed to the bezel 12 is arranged so that the reflection axis is 90° and the transmission axis is 0°.

[0087] In the near-distance mode, right circularly polarized light is converted into 0° linearly polarized light by the phase shift plate 53, and this 0° linearly polarized light is reflected by the reflective polarizer 54, which is arranged with a reflection axis of 0° and a transmission axis of 90°. On the other hand, in the far-distance mode, the reflective polarizer 54 is arranged with a reflection axis of 90° and a transmission axis of 0°, so the 0° linearly polarized light is not reflected by the reflective polarizer 54 but is transmitted therethrough.

[0088] That is, the light does not return to layer 52 without being subjected to the positive optical focal length due to reflection (the effect of the concave mirror), so that when the optical device does not have other elements used as lenses, the display of the display panel 30 can be viewed at an equal or approximately equal magnification without magnification.

[0089] The above is an explanation of the function of the optical device in telephoto mode. Figure 6A 、 Figure 6B as well as Figure 7A 、 Figure 7B The structures of the display panel 30 and the optical device shown are just examples, and other structures may be adopted.

[0090] Note that, in the above description, the viewing mode is switched by rotating the reflective polarizing plate 54 , but the viewing mode may be switched by rotating other elements.

[0091] For example, Figure 8A As shown in FIG. 1 , the state where the transmission axis of the linear polarizing plate 32 is arranged at 90° can be used as the telephoto mode, and the state where the linear polarizing plate 32 is rotated 90° (see FIG. 1 ) can be used as the telephoto mode. Figure 6B ) as close range mode.

[0092] exist Figure 8A In this embodiment, the 90° linearly polarized light emitted from the linear polarizer 32 is converted into left-handed circularly polarized light by the phase difference plate 33. The left-handed circularly polarized light emitted from the phase difference plate 33 passes through the optical unit 45 and is incident on the phase difference plate 53, where it is converted into 90° linearly polarized light. The 90° linearly polarized light emitted from the phase difference plate 53 passes through the reflective polarizer 54, whose transmission axis is 90°, and enters the eye. Therefore, by configuring the transmission axis of the linear polarizer 32 at 90°, a telephoto mode can be achieved.

[0093] Or, as Figure 8B As shown in FIG, the slow axis of the phase difference plate 33 can be configured at 135° as the tele mode, and the phase difference plate 33 can be rotated 90° (refer to FIG. Figure 6B ) as close range mode.

[0094] exist Figure 8B In this embodiment, the 0° linearly polarized light emitted from the linear polarizer 32 is converted into left circularly polarized light by the phase difference plate 33. The left circularly polarized light emitted from the phase difference plate 33 passes through the optical unit 45 and is incident on the phase difference plate 53, where it is converted into 90° linearly polarized light. The 90° linearly polarized light emitted from the phase difference plate 53 passes through the reflective polarizer 54, whose transmission axis is 90°, and enters the eye. Therefore, by configuring the slow axis of the phase difference plate 33 at 135°, a telephoto mode can be achieved.

[0095] Or, as Figure 8CAs shown, the state where the slow axis of the phase difference plate 53 is arranged at 45° can be used as the remote mode, and the state where the phase difference plate 53 is rotated 90° (see Figure 6B ) as close range mode.

[0096] exist Figure 8C In this embodiment, the 0° linearly polarized light emitted from the linear polarizer 32 is converted into right-handed circularly polarized light by the phase plate 33. The right-handed circularly polarized light emitted from the phase plate 33 passes through the optical unit 45 and is incident on the phase plate 53, where it is converted into 90° linearly polarized light. The 90° linearly polarized light emitted from the phase plate 53 passes through the reflective polarizer 54, whose transmission axis is 90°, and enters the eye. Therefore, by configuring the slow axis of the phase plate 53 at 45°, a telephoto mode can be achieved.

[0097] Note that in Figure 8B 、 Figure 8C In the structure, when the phase difference plate 33 or the phase difference plate 53 is attached to the optical unit 45, the optical unit 45 can also be rotated.

[0098] In addition, Figures 8A to 8C In the structure of , since the linkage with the rotation of the bezel 12 is complicated, it is preferable to provide a rotatable element at a position different from the bezel 12. For example, it is preferable to provide a rotatable element between the case 11 and the bezel 12 or in a part of the case, and to fix the element and one of the elements of the optical device (linear polarizer 32, phase difference plate 33 or phase difference plate 53).

[0099] When the rotation of the bezel 12 is linked to the viewing mode, it is preferable to fix the element at the end of the optical device close to the bezel 12 to the bezel 12. Therefore, when the rotation of the bezel 12 is linked to the viewing mode, it can be said that it is most preferable to use Figure 6A 、 Figure 6B as well as Figure 7A 、 Figure 7B The reflective polarizer 54 is shown rotated to switch the viewing mode configuration.

[0100] Figure 9A 1 is a diagram illustrating a display panel 30 included in an electronic device according to one embodiment of the present invention. The display panel 30 includes a pixel array 74, a circuit 75, and a circuit 76. The pixel array 74 includes pixels 70 arranged in columns and rows.

[0101] The pixel 70 may include a plurality of sub-pixels 71. The sub-pixels 71 have a function of emitting light for display.

[0102] Note that in this specification, although the minimum unit that performs independent work in a "pixel" is defined as a "sub-pixel" for convenience, "pixel" can be replaced with "region" and "sub-pixel" can be replaced with "pixel".

[0103] The sub-pixel 71 includes a light-emitting device that emits visible light. As the light-emitting device, an EL element such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) is preferably used. As the light-emitting substance contained in the EL element, there can be cited substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.). In addition, as the light-emitting device, LEDs such as Micro LED (Light Emitting Diode) can also be used.

[0104] Circuits 75 and 76 are driving circuits for driving sub-pixels 71. Circuit 75 can be used as a source driving circuit, and circuit 76 can be used as a gate driving circuit. For example, shift register circuits can be used as circuits 75 and 76.

[0105] In addition, if Figure 9B As shown, the display panel 30 may also have the following structure: circuits 75 and 76 are provided in layer 77; pixel array 74 is provided in layer 78; and layers 77 and 78 overlap. By adopting this structure, a display device with a narrow frame can be formed.

[0106] Furthermore, by placing the driver circuit in a layer below the pixel array 74, the wiring length and wiring capacitance can be shortened, thereby realizing a display panel capable of high-speed operation and low power consumption.

[0107] In addition, if Figure 9B As shown, by dividing the circuits 75 and 76, the pixel array 74 can be partially driven. For example, image data can be partially rewritten in the pixel array 74. In addition, a portion of the pixel array 74 can be operated at a different operating frequency.

[0108] Notice, Figure 9B The arrangement and area of circuits 75 and 76 shown are merely examples and may be modified as appropriate. Furthermore, portions of circuits 75 and 76 may be formed in the same layer as pixel array 74. Furthermore, layer 77 may also include circuits such as memory circuits, computing circuits, and communication circuits.

[0109] In this structure, for example, layer 77 can be provided on a single-crystal silicon substrate, circuits 75 and 76 can be formed using transistors containing silicon in their channel formation regions (hereinafter, referred to as Si transistors), and pixel circuits included in pixel array 74 provided in layer 78 can be formed using transistors containing metal oxide in their channel formation regions (hereinafter, referred to as OS transistors). The OS transistors can be formed by stacking thin films on the Si transistors.

[0110] Note that Figure 9C As shown, a layer 79 provided with OS transistors may be included between layer 77 and layer 78. In layer 79, OS transistors may be used to form a portion of the pixel circuit included in pixel array 74. Alternatively, OS transistors may be used to form a portion of circuits 75 and 76. Alternatively, OS transistors may be used to form a portion of circuits such as memory circuits, computing circuits, and communication circuits that may be provided in layer 77.

[0111] also, Figure 9B The display panel 30 is shown as an example of a circular shape when viewed from above, but it may also be a polygonal shape. Figure 9D As shown, it can also be octagonal when viewed from above. Figure 9E As shown, it can also be quadrilateral when viewed from above.

[0112] At least a part of this embodiment mode can be implemented in combination with other embodiment modes and examples described in this specification as appropriate.

[0113] (Implementation Method 2) In this embodiment, a structural example of a display panel that can be used in an electronic device according to one embodiment of the present invention is described. The display panel described below can be used as the display panel 30 in Embodiment 1.

[0114] One embodiment of the present invention is a display panel including a light-emitting element (also referred to as a light-emitting device). The display panel includes two or more pixels emitting light of different colors. Each pixel includes a light-emitting element. Each light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The two or more light-emitting elements emitting light of different colors each include an EL layer containing a different light-emitting material. For example, a full-color display panel can be achieved by including three light-emitting elements that emit red (R), green (G) or blue (B) light, respectively.

[0115] When manufacturing a display panel that includes multiple light-emitting elements with different luminescent colors, it is necessary to form at least the layer containing the light-emitting material (light-emitting layer) into an island shape. A known method is to form an island-shaped organic film by vapor deposition using a shadow mask such as a metal mask when forming part or all of the EL layer. However, this method is affected by various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and vapor scattering, which causes the outline of the deposited film to increase. This causes the shape and position of the island-shaped organic film to deviate from the designed shape and position, making it difficult to achieve high definition and a high aperture ratio for the display panel. In addition, during vapor deposition, the thickness of the layer sometimes becomes smaller at the end due to blurred outlines. In other words, the thickness of the island-shaped light-emitting layer sometimes varies depending on the position. In addition, when manufacturing large, high-resolution or high-definition display panels, there is a concern that the manufacturing yield will decrease due to low dimensional accuracy of the metal mask and deformation caused by heat, etc. Therefore, measures have been taken to artificially improve the definition (also known as pixel density) by adopting special pixel arrangements such as the Pentile arrangement.

[0116] Note that in this specification, "island-shaped" refers to a state in which two or more layers formed from the same material in the same process are physically separated. For example, an island-shaped light-emitting layer means that the light-emitting layer is physically separated from the adjacent light-emitting layer.

[0117] In one embodiment of the present invention, the EL layer is processed into a fine pattern using photolithography, without using a shadow mask such as a fine metal mask (FMM). This makes it possible to realize display panels with high definition and a high aperture ratio, which were previously difficult to achieve. Furthermore, since the EL layer can be manufactured separately, a high-quality display panel with exceptionally clear and high contrast can be realized. Furthermore, for example, it is also possible to process the EL layer into a fine pattern using both a metal mask and photolithography.

[0118] In addition, part or all of the EL layer can be physically separated. Thus, leakage current between light-emitting elements through a layer commonly used by adjacent light-emitting elements (also referred to as a common layer) can be suppressed. Therefore, light emission due to unintentional crosstalk can be suppressed, thereby realizing a display panel with very high contrast. In particular, a display panel with high current efficiency at low brightness can be realized.

[0119] One embodiment of the present invention can also realize a display panel that combines a white light-emitting element and a color filter. In this case, light-emitting elements of the same structure can be used for each light-emitting element in a pixel (sub-pixel) that emits light of different colors, and all layers in each light-emitting element can be used as a common layer. Furthermore, part or all of each EL layer can be separated by a process utilizing a photolithography method. Thus, leakage current through the common layer can be suppressed and a display panel with high contrast can be realized. In particular, in an element having a series structure in which a plurality of light-emitting layers are stacked with an intermediate layer having high conductivity, leakage current through the intermediate layer can be effectively prevented, so a display panel with high brightness, high definition and high contrast can be realized.

[0120] When the EL layer is processed using photolithography, degradation may occur due to partial exposure of the light-emitting layer. Therefore, it is preferable to provide an insulating layer that covers at least the side surfaces of the island-shaped light-emitting layer. This insulating layer may also cover a portion of the top surface of the island-shaped EL layer. This insulating layer is preferably made of a material that has barrier properties to water and oxygen. For example, an inorganic insulating film that does not easily diffuse water or oxygen can be used. This can suppress degradation of the EL layer and achieve a highly reliable display panel.

[0121] In addition, there is an area (recess) between two adjacent light-emitting elements where the EL layer of each light-emitting element is not provided. When a common electrode or a common electrode and a common layer are formed in a manner covering the recess, the common electrode may be disconnected (also called disconnected) due to a step at the end of the EL layer, resulting in insulation of the common electrode on the EL layer. Therefore, it is preferable to adopt a structure (also called LFP: Local Filling Planarization) in which a resin layer used as a planarizing film is used to fill the local step between two adjacent light-emitting elements. The resin layer is used as a planarizing film. As a result, the disconnection of the common layer or the common electrode can be suppressed, and a display panel with high reliability can be achieved.

[0122] Hereinafter, a more specific structural example of a display panel according to one embodiment of the present invention will be described with reference to the drawings.

[0123] [Structure example 1] Figure 10A FIG1 is a schematic top view of a display panel 100 according to one embodiment of the present invention. The display panel 100 includes a plurality of red light-emitting elements 110R, a plurality of green light-emitting elements 110G, and a plurality of blue light-emitting elements 110B on a substrate 101. Figure 10A In order to distinguish the light-emitting elements, the symbols R, G, and B are attached to the light-emitting area of each light-emitting element.

[0124] The light emitting elements 110R, the light emitting elements 110G, and the light emitting elements 110B are arranged in a matrix. Figure 10A A so-called stripe arrangement in which light-emitting elements of the same color are arranged in one direction is shown. Note that the arrangement method of the light-emitting elements is not limited to this, and arrangement methods such as S stripe arrangement, Delta arrangement, Bayer arrangement, zigzag arrangement, etc. can also be used, and Pentile arrangement, Diamond arrangement, etc. can also be used.

[0125] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). As the light-emitting substance contained in the EL element, an inorganic compound (such as a quantum dot material) can also be used in addition to an organic compound.

[0126] In addition, Figure 10A A connection electrode 111C electrically connected to the common electrode 113 is shown. The connection electrode 111C is supplied with a potential (for example, an anode potential or a cathode potential) supplied to the common electrode 113. The connection electrode 111C is provided outside the display area in which the light-emitting elements 110R, etc. are arranged.

[0127] The connection electrode 111C can be provided along the outer periphery of the display area. For example, it can be provided along one side of the outer periphery of the display area, or can straddle two or more sides of the outer periphery of the display area. That is, in the case where the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped (rectangular), L-shaped, "冂"-shaped (bracket-shaped), or quadrangular, etc. Note that in this specification, etc., the top surface shape refers to the shape in a plan view, that is, the shape when viewed from above.

[0128] Figure 10B and Figure 10C are respectively cross-sectional schematic views corresponding to Figure 10A the dotted lines A1 - A2 and the dotted lines A3 - A4 in Figure 10B A cross-sectional schematic view showing the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B is shown, Figure 10C A cross-sectional schematic view showing a connection portion 140 where the connection electrode 111C is connected to the common electrode 113 is shown.

[0129] Light-emitting element 110R includes pixel electrode 111R, organic layer 112R, common layer 114, and common electrode 113. Light-emitting element 110G includes pixel electrode 111G, organic layer 112G, common layer 114, and common electrode 113. Light-emitting element 110B includes pixel electrode 111B, organic layer 112B, common layer 114, and common electrode 113. Light-emitting elements 110R, 110G, and 110B share common layer 114 and common electrode 113.

[0130] Organic layer 112R included in light-emitting element 110R contains a light-emitting organic compound that emits at least red light. Organic layer 112G included in light-emitting element 110G contains a light-emitting organic compound that emits at least green light. Organic layer 112B included in light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. Organic layer 112R, organic layer 112G, and organic layer 112B may each be referred to as an EL layer and include at least a layer containing a light-emitting substance (light-emitting layer).

[0131] Hereinafter, when describing common features among light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, they may be referred to as light-emitting element 110. Similarly, when describing common features among components identified by letters, such as organic layer 112R, organic layer 112G, and organic layer 112B, the letters may be omitted.

[0132] The organic layer 112 and the common layer 114 may each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 may include a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 may include an electron injection layer.

[0133] The pixel electrode 111R, the pixel electrode 111G and the pixel electrode 111B are all provided in each light-emitting element. In addition, the common electrode 113 and the common layer 114 are provided as a layer commonly used by each light-emitting element. A conductive film having light transmittance to visible light is used as one of the pixel electrodes and the common electrode 113, and a reflective conductive film is used as the other. By making each pixel electrode light-transmitting and the common electrode 113 reflective, a bottom-emission type (bottom-emission structure) display panel can be realized. Conversely, by making each pixel electrode reflective and the common electrode 113 light-transmitting, a top-emission type (top-emission structure) display panel can be realized. In addition, by making both the pixel electrode and the common electrode 113 light-transmitting, a double-sided emission type (double-sided emission structure) display panel can also be realized.

[0134] A protective layer 121 is provided on the common electrode 113 so as to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above to each light emitting element.

[0135] The end of the pixel electrode 111 preferably has a tapered shape. When the end of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the end of the pixel electrode 111 may also have a tapered shape. By making the end of the pixel electrode 111 have a tapered shape, the coverage of the organic layer 112 provided across the end of the pixel electrode 111 can be improved. In addition, by making the side of the pixel electrode 111 have a tapered shape, foreign matter (for example, dust or particles) can be easily removed during the manufacturing process through washing, etc., which is preferable.

[0136] Note that in this specification, etc., a tapered shape refers to a shape in which at least a portion of the side surface of a component is inclined relative to the substrate surface. For example, it is preferable to have a region where the angle formed by the inclined side surface and the substrate surface (also called a taper angle) is less than 90°.

[0137] Organic layer 112 is processed into an island shape using photolithography. As a result, the top surface of organic layer 112 forms an angle of approximately 90° with its side surfaces at its ends. Meanwhile, organic films formed using a Fine Metal Mask (FMM) or other methods tend to become thinner toward the ends. For example, the top surface of the organic layer 112 forms a slope within a range of 1 μm to 10 μm from the end, making it difficult to distinguish between the top surface and the side surfaces.

[0138] An insulating layer 125 , a resin layer 126 , and a layer 128 are provided between two adjacent light emitting elements.

[0139] Between two adjacent light-emitting elements, the side surfaces of each organic layer 112 face each other via a resin layer 126. The resin layer 126 is positioned between the two adjacent light-emitting elements and is provided to fill the ends of each organic layer 112 and the area between the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and the common layer 114 and the common electrode 113 are provided to cover the top surface of the resin layer 126.

[0140] The resin layer 126 is used as a planarization film to fill the step between two adjacent light-emitting elements. The resin layer 126 prevents the common electrode 113 from being disconnected (also called disconnected) by the step at the end of the organic layer 112, thereby preventing the common electrode on the organic layer 112 from being isolated.

[0141] An insulating layer composed of an organic material is preferably used as the resin layer 126. For example, acrylic resins, polyimide resins, epoxy resins, imide resins, polyamide resins, polyimideamide resins, silicone resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resins can be used as the resin layer 126.

[0142] Alternatively, a photosensitive resin may be used as the resin layer 126. A photoresist may be used as the photosensitive resin. A positive-type material or a negative-type material may be used as the photosensitive resin.

[0143] Resin layer 126 may also contain a material that absorbs visible light. For example, resin layer 126 itself may be composed of a material that absorbs visible light, or resin layer 126 may contain a pigment that absorbs visible light. Examples of resin layer 126 include resins that can be used as color filters that transmit red, blue, or green light and absorb other light, or resins that contain carbon black as a pigment and are used as a black matrix.

[0144] The insulating layer 125 is in contact with the side surface of the organic layer 112. The insulating layer 125 also covers the upper end portion of the organic layer 112. A portion of the insulating layer 125 is in contact with the top surface of the substrate 101.

[0145] The insulating layer 125 is located between the resin layer 126 and the organic layer 112 and serves as a protective film to prevent the resin layer 126 from contacting the organic layer 112. When the organic layer 112 and the resin layer 126 come into contact, the organic layer 112 may be dissolved by, for example, an organic solvent used to form the resin layer 126. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, the side surfaces of the organic layer 112 can be protected.

[0146] The insulating layer 125 may be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film may be used as the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum nitride films. Examples of nitride oxide insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, by using a metal oxide film such as an aluminum oxide film or a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film formed by ALD (Atomic Layer Deposition) as the insulating layer 125 , the insulating layer 125 can have fewer pinholes and have an excellent function of protecting the EL layer.

[0147] In this specification, etc., "oxynitride" refers to a material containing more oxygen than nitrogen, while "oxynitride" refers to a material containing more nitrogen than oxygen. For example, "silicon oxynitride" refers to a material containing more oxygen than nitrogen, while "silicon oxynitride" refers to a material containing more nitrogen than oxygen.

[0148] The insulating layer 125 can be formed by sputtering, CVD, PLD, ALD, or the like. The insulating layer 125 is preferably formed by ALD, which has good coverage.

[0149] Alternatively, a reflective film (e.g., a metal film containing one or more metals selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 125 and the resin layer 126 to reflect light emitted by the light-emitting layer. This can further improve light extraction efficiency.

[0150] Layer 128 is the remaining portion of a protective layer (also referred to as a mask layer or sacrificial layer) used to protect organic layer 112 during etching of organic layer 112. Layer 128 can use the same material as that used for insulating layer 125. In particular, layer 128 and insulating layer 125 are preferably made of the same material, thereby allowing the use of the same processing equipment.

[0151] In particular, metal oxide films such as aluminum oxide films and hafnium oxide films, and inorganic insulating films such as silicon oxide films formed by the ALD method have relatively few pinholes and therefore excel in protecting the EL layer.

[0152] The protective layer 121 can have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, a semiconductor material or conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide can be used as the protective layer 121.

[0153] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferred to sandwich an organic insulating film between a pair of inorganic insulating films. In addition, the organic insulating film is preferably used as a planarizing film. Therefore, the top surface of the organic insulating film can be made flat, so the coverage of the inorganic insulating film thereon is improved, thereby improving the barrier properties. In addition, the top surface of the protective layer 121 becomes flat, so when a structure (for example, a color filter, an electrode or a lens array of a touch sensor, etc.) is provided above the protective layer 121, the influence of the concave and convex shape caused by the lower structure can be reduced, so it is preferred.

[0154] Figure 10C The figure shows a connection portion 140 that electrically connects the connection electrode 111C to the common electrode 113. In the connection portion 140, an opening is provided in the insulating layer 125 and the resin layer 126 above the connection electrode 111C. The connection electrode 111C and the common electrode 113 are electrically connected in this opening.

[0155] Notice, Figure 10C Although the connection portion 140 electrically connecting the connection electrode 111C and the common electrode 113 is shown, the common electrode 113 may also be provided on the connection electrode 111C via the common layer 114. In particular, when a carrier injection layer is used as the common layer 114, the resistivity of the material used for the common layer 114 is sufficiently low and the thickness is also very thin. Therefore, in many cases, there is no problem with the common layer 114 being located at the connection portion 140. This allows the common electrode 113 and the common layer 114 to be formed using the same shadow mask, thereby reducing manufacturing costs.

[0156] [Structure Example 2] Hereinafter, a display panel having a partially different structure from that of the above-described Structural Example 1 will be described. Note that regarding the same parts as those of the above-described Structural Example 1, the above-described Structural Example 1 may be referred to and the description thereof may be omitted.

[0157] Figure 11A 1 is a schematic cross-sectional view of the display panel 100a. The main differences between the display panel 100a and the display panel 100 are: the structure of the light emitting element; and the fact that the former includes a coloring layer.

[0158] The display panel 100a includes a light-emitting element 110W that emits white light. The light-emitting element 110W includes a pixel electrode 111, an organic layer 112W, a common layer 114, and a common electrode 113. The organic layer 112W emits white light. For example, the organic layer 112W may include two or more light-emitting materials whose luminescent colors are complementary to each other. For example, the organic layer 112W may include a light-emitting organic compound that emits red light, a light-emitting organic compound that emits green light, and a light-emitting organic compound that emits blue light. In addition, it may also include a light-emitting organic compound that emits blue light and a light-emitting organic compound that emits yellow light.

[0159] Each organic layer 112W is separated between two adjacent light-emitting elements 110W. This prevents leakage current from flowing between adjacent light-emitting elements 110W through the organic layer 112W, thereby suppressing crosstalk caused by this leakage current. Consequently, a display panel with high contrast and color reproducibility can be achieved.

[0160] An insulating layer 122 serving as a planarization film is provided over the protective layer 121 , and the colored layer 116R, the colored layer 116G, and the colored layer 116B are provided over the insulating layer 122 .

[0161] An organic resin film or an inorganic insulating film with a flattened top surface can be used as insulating layer 122. Since insulating layer 122 serves as the surface on which colored layers 116R, 116G, and 116B are formed, a flat top surface of insulating layer 122 allows for uniform thickness of colored layers 116R and the like, thereby improving color purity. Note that if the thickness of colored layers 116R and the like is non-uniform, the amount of light absorbed varies depending on the region within colored layer 116R, potentially reducing color purity.

[0162] [Structure Example 3] Figure 11B is a schematic cross-sectional view of the display panel 100b.

[0163] The light-emitting element 110R includes a pixel electrode 111, a conductive layer 115R, an organic layer 112W, and a common electrode 113. The light-emitting element 110G includes a pixel electrode 111, a conductive layer 115G, an organic layer 112W, and a common electrode 113. The light-emitting element 110B includes a pixel electrode 111, a conductive layer 115B, an organic layer 112W, and a common electrode 113. The conductive layers 115R, 115G, and 115B are all light-transmitting and function as optical adjustment layers.

[0164] A microcavity resonator (microcavity) structure can be achieved by using a film that reflects visible light as pixel electrode 111 and a film that is both reflective and transmissive to visible light as common electrode 113. In this case, by adjusting the thicknesses of conductive layers 115R, 115G, and 115B to achieve an optimal optical path length, even when using an organic layer 112 that emits white light, it is possible to extract light of different wavelengths from each of light-emitting elements 110R, 110G, and 110B, thereby enhancing the intensity of light.

[0165] Furthermore, by providing the colored layer 116R, the colored layer 116G, and the colored layer 116B on the optical paths of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, respectively, light with high color purity can be extracted.

[0166] Insulating layer 123 is also provided to cover the ends of pixel electrode 111, conductive layer 115R, conductive layer 115G, and conductive layer 115B. The ends of insulating layer 123 preferably have a tapered shape. Providing insulating layer 123 improves coverage of the organic layer 112W, common electrode 113, and protective layer 121 formed thereon.

[0167] The organic layer 112W and the common electrode 113 are respectively provided as a continuous film in each light emitting element. By adopting this structure, the manufacturing process of the display panel can be greatly simplified, so it is preferred.

[0168] Here, the end of the pixel electrode 111 preferably has a substantially vertical shape. This allows for a steeply inclined portion to be formed on the surface of the insulating layer 123, and allows for a thin portion to be formed in a portion of the organic layer 112W covering that portion, or allows for a portion of the organic layer 112W to be separated. This eliminates the need for processing the organic layer 112W using photolithography or the like, and suppresses leakage current between adjacent light-emitting elements through the organic layer 112W.

[0169] The above describes an example of the structure of the display panel.

[0170] [Pixel layout] The following mainly describes Figure 10A Different pixel layouts: There is no particular restriction on the arrangement of light-emitting elements (sub-pixels), and various arrangements can be used.

[0171] Examples of the top surface shape of a sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a shape with rounded corners of these polygons, an ellipse, or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting region of a light-emitting element.

[0172] Figure 12AThe pixels 150 are shown in an S-stripe arrangement. Figure 12A The pixel 150 shown is composed of three sub-pixels: light-emitting elements 110a, 110b, and 110c. For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c may be a blue light-emitting element, a red light-emitting element, and a green light-emitting element, respectively.

[0173] like Figure 12B The pixel 150 shown includes a light-emitting element 110a having a top shape that is approximately trapezoidal or triangular with rounded corners, a light-emitting element 110b having a top shape that is approximately trapezoidal or triangular with rounded corners, and a light-emitting element 110c having a top shape that is approximately quadrilateral or hexagonal with rounded corners. Furthermore, the light-emitting area of light-emitting element 110a is larger than that of light-emitting element 110b. In this way, the shape and size of each light-emitting element can be determined independently. For example, the size of a light-emitting element with high reliability can be smaller. For example, light-emitting element 110a, light-emitting element 110b, and light-emitting element 110c can be a green light-emitting element, a red light-emitting element, and a blue light-emitting element, respectively.

[0174] Figure 12C The pixels 124a and 124b shown are arranged in a Pentile pattern. Figure 12C The example shows an alternate arrangement of pixel 124a including light-emitting elements 110a and 110b and pixel 124b including light-emitting elements 110b and 110c. For example, light-emitting elements 110a, 110b, and 110c may be red, green, and blue, respectively.

[0175] Figure 12D and Figure 12E Pixels 124a and 124b are shown in a delta arrangement. Pixel 124a includes two light-emitting elements (light-emitting elements 110a and 110b) in the upper row (first row) and one light-emitting element (light-emitting element 110c) in the lower row (second row). Pixel 124b includes one light-emitting element (light-emitting element 110c) in the upper row (first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the lower row (second row). For example, light-emitting elements 110a, 110b, and 110c may be red, green, and blue, respectively.

[0176] Figure 12D An example is shown in which each light emitting element has a top surface shape that is approximately quadrangular with rounded corners. Figure 12E An example is shown in which each light-emitting element has a circular top surface shape.

[0177] Figure 12FAn example of a zigzag arrangement of light-emitting elements of different colors is shown. Specifically, when viewed from above, the top edges of two light-emitting elements arranged in the row direction (e.g., light-emitting element 110a and light-emitting element 110b, or light-emitting element 110b and light-emitting element 110c) are offset. For example, light-emitting element 110a, light-emitting element 110b, and light-emitting element 110c can also be red, green, and blue, respectively.

[0178] In photolithography, the finer the pattern being processed, the more important the effect of light diffraction is. Consequently, the fidelity of transferring the photomask pattern through exposure decreases, making it difficult to process the resist mask into the desired shape. Consequently, even when the photomask pattern is rectangular, it is easy to create a pattern with rounded corners. Consequently, the top surface of a light-emitting element sometimes takes on a rounded polygonal, elliptical, or circular shape.

[0179] Furthermore, in a method for manufacturing a display panel according to one embodiment of the present invention, an EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material of the EL layer and the curing temperature of the resist material, the resist film may not be sufficiently cured. The insufficiently cured resist film may have a shape that is far from the desired shape when processed. As a result, the top surface of the EL layer may have a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like. For example, when a resist mask with a square top surface is to be formed, a resist mask with a circular top surface may be formed, and the top surface of the EL layer may have a circular shape.

[0180] To achieve the desired top surface shape of the EL layer, a technique (OPC (Optical Proximity Correction)) can be used to pre-calibrate the mask pattern so that the designed pattern matches the transferred pattern. Specifically, OPC adds correction patterns to the corners of the mask pattern.

[0181] The above describes the layout of pixels.

[0182] Note that in the near-distance mode described in Embodiment 1, in order to display more information, it is preferable to use a high-definition display panel with a high pixel density. On the other hand, in the far-distance mode, since the display is viewed with the eyes farther away from the display panel, a high-definition display exceeding the human eye's resolution would result in a rendering load and wasteful power consumption. Therefore, in the far-distance mode, it is preferable to use a high-definition display panel with a reduced resolution for display.

[0183] For example, it is preferred that Figure 13AAs shown, in the close-range mode, all pixels PIX_A are driven by inputting different image signals, as shown in FIG. Figure 13B As shown, in the tele mode, the pixel PIX_B composed of a plurality of PIX_A is driven at once.

[0184] Specifically, when the display panel is 3207ppi (one pixel is 7.92μm×7.92μm), Figure 13B As shown, when driving a 3×3 pixel PIX_A as one pixel PIX_B, a display panel with a resolution of 1069 ppi (one pixel is 23.8 μm × 23.8 μm) can be used. Furthermore, when driving a 6×6 pixel PIX_A as one pixel PIX_B, a display panel with a resolution of 535 ppi (one pixel is 47.5 μm × 47.5 μm) can be used. This driving method reduces the rendering load.

[0185] Or, as Figure 13C As shown in FIG. 1 , it is preferable to drive only a portion of the pixels PIX_A (pixels PIX_C) to input image signals. By performing such a drive, it is not necessary to input signals to the pixels PIX_A that are not driven, and the pixels PIX_A are not driven, thereby reducing power consumption. Note that when performing the drive as shown in FIG. Figure 13C In the driving shown, in order to prevent screen burn-in, it is preferable to periodically shift the pixel driven as the pixel PIX_C.

[0186] Note that in 13A to 13C Shown in Figure 13A The example of the pixel array composed of the pixel 150 shown in FIG. 1 is shown in FIG. 2 , but it is preferable to perform the same driving when using other pixels described in this embodiment. In addition, it is also possible to use a pixel composed of a plurality of pixels PIX_A for area gradation.

[0187] At least a part of this embodiment mode can be implemented in combination with other embodiment modes and examples described in this specification as appropriate.

[0188] (Implementation 3) In this embodiment, another structural example of a display panel that can be used in an electronic device according to one embodiment of the present invention is described.

[0189] The display panel of this embodiment is a high-definition display panel, which is particularly suitable for use in the display portion of wearable devices that can be worn on the head, such as head-mounted displays for VR and glasses-type AR devices.

[0190] [Display module] Figure 14A2 is a perspective view of a display module 280. The display module 280 includes a display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and may be any of the display panels 200B to 200F described later.

[0191] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is a region for displaying an image.

[0192] Figure 14B A perspective schematic diagram shows the structure of one side of a substrate 291. A circuit portion 282, a pixel circuit portion 283 on circuit portion 282, and a pixel portion 284 on pixel circuit portion 283 are stacked on substrate 291. Furthermore, a terminal portion 285 for connecting to an FPC 290 is provided on a portion of substrate 291 that does not overlap with pixel portion 284. Terminal portion 285 and circuit portion 282 are electrically connected via a wiring portion 286 composed of a plurality of wiring lines.

[0193] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Figure 14B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a includes a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0194] The pixel circuit portion 283 includes a plurality of pixel circuits 283a arranged periodically. One pixel circuit 283a controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may include three circuits for controlling the light emission of one light-emitting device. For example, the pixel circuit 283a may have a structure including at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. Thus, an active matrix display panel can be implemented.

[0195] The circuit portion 282 includes circuits for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it preferably includes one or both of a gate line driver circuit and a source line driver circuit. Furthermore, it may include at least one of an arithmetic circuit, a storage circuit, and a power supply circuit. Furthermore, the transistors provided in the circuit portion 282 may also constitute part of the pixel circuit 283a. In other words, the pixel circuit 283a may be constituted by the transistors included in the pixel circuit portion 283 and the transistors included in the circuit portion 282.

[0196] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. Alternatively, an IC may be mounted on the FPC 290.

[0197] The display module 280 can adopt a structure in which one or both of the pixel circuit unit 283 and the circuit unit 282 are overlapped on the lower side of the pixel unit 284, so that the display unit 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display unit 281 can be greater than 40% and less than 100%, preferably greater than 50% and less than 95%, and more preferably greater than 60% and less than 95%. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display unit 281 have extremely high clarity. For example, the display unit 281 preferably arranges the pixels 284a with a clarity of greater than 2000ppi, more preferably greater than 3000ppi, further preferably greater than 5000ppi, and even more preferably greater than 6000ppi and less than 20,000ppi or less than 30,000ppi.

[0198] This display module 280 is very clear and is therefore suitable for use in VR devices such as head-mounted displays or glasses-type AR devices. For example, because the display module 280 has a very high-definition display portion 281, in a structure where the display portion of the display module 280 is viewed through a lens, even if the user magnifies the display portion with the lens, the pixels cannot be seen, thereby achieving a highly immersive display. In addition, the display module 280 can also be applied to electronic devices with smaller display portions. For example, it is suitable for use in the display portion of wearable electronic devices such as watch-type devices.

[0199] [Display panel 200A] Figure 15 The display panel 200A shown includes a substrate 301 , light-emitting elements 110R, 110G, and 110B, a capacitor 240 , and a transistor 310 .

[0200] Substrate 301 is equivalent to Figure 14A and Figure 14B The substrate 291 in FIG.

[0201] Transistor 310 is a transistor having a channel formation region in substrate 301. As substrate 301, a semiconductor substrate such as a single crystal silicon substrate can be used, for example. Transistor 310 includes a portion of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. Conductive layer 311 serves as a gate electrode. Insulating layer 313 is located between substrate 301 and conductive layer 311 and serves as a gate insulating layer. Low-resistance region 312 is a region in substrate 301 doped with impurities and serves as either a source or a drain. Insulating layer 314 covers the side surfaces of conductive layer 311.

[0202] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0203] Furthermore, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0204] Capacitor 240 includes conductive layer 241, conductive layer 245, and insulating layer 243 therebetween. Conductive layer 241 serves as one electrode of capacitor 240, conductive layer 245 serves as the other electrode of capacitor 240, and insulating layer 243 serves as a dielectric of capacitor 240.

[0205] Conductive layer 241 is provided on insulating layer 261 and embedded in insulating layer 254. Conductive layer 241 is electrically connected to one of the source and drain of transistor 310 via plug 271 embedded in insulating layer 261. Insulating layer 243 is provided to cover conductive layer 241. Conductive layer 245 is provided in a region overlapping conductive layer 241 with insulating layer 243 interposed therebetween.

[0206] The capacitor 240 is covered with an insulating layer 255 a , an insulating layer 255 b is provided on the insulating layer 255 a , and an insulating layer 255 c is provided on the insulating layer 255 b .

[0207] Inorganic insulating films can be used as appropriate for the insulating layers 255a, 255b, and 255c. For example, preferably, silicon oxide films are used for the insulating layers 255a and 255c, and a silicon nitride film is used for the insulating layer 255b. Thus, the insulating layer 255b can function as an etching protection film. Although this embodiment shows an example in which a recess is formed by etching a portion of the insulating layer 255c, the recess need not be formed in the insulating layer 255c.

[0208] A light-emitting element 110R emitting red light, a light-emitting element 110G emitting green light, and a light-emitting element 110B emitting blue light are provided on the insulating layer 255c. The structures of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B can refer to the second embodiment.

[0209] Display panel 200A has separate light-emitting devices for each color, resulting in minimal chromaticity variation between low-brightness and high-brightness light. Furthermore, the organic layers 112R, 112G, and 112B are separated from each other, minimizing crosstalk between adjacent sub-pixels even in a high-definition display panel. This enables a high-definition, high-quality display panel.

[0210] An insulating layer 125 , a resin layer 126 , and a layer 128 are provided in a region between adjacent light emitting elements.

[0211] The pixel electrodes 111R, 111G, and 111B of the light-emitting elements are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c is equal to or substantially equal to the height of the top surface of the plug 256. Various conductive materials can be used as the plug.

[0212] Furthermore, a protective layer 121 is provided on the light emitting elements 110R, 110G, and 110B. A substrate 170 is bonded to the protective layer 121 via an adhesive layer 171 .

[0213] No insulating layer covering the top end of the pixel electrodes 111 is provided between two adjacent pixel electrodes 111. Therefore, the interval between adjacent light-emitting elements can be made very small, thereby achieving a high-definition or high-resolution display panel.

[0214] [Display panel 200B] Figure 16 The display panel 200B shown has a structure in which transistors 310A and 310B are stacked, each forming a channel in a semiconductor substrate. Note that in the following description of the display panel, description of parts identical to those of the previously described display panel may be omitted.

[0215] The display panel 200B has the following structure: a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device and a substrate 301A provided with a transistor 310A are bonded together.

[0216] Here, an insulating layer 345 is provided on the bottom surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 function as protective layers and can suppress diffusion of impurities into the substrates 301B and 301A. Inorganic insulating films that can be used for the protective layer 121 can be used as the insulating layers 345 and 346.

[0217] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and the insulating layer 345. Here, it is preferable to provide an insulating layer 344 that serves as a protective layer to cover the side surfaces of the plug 343.

[0218] In substrate 301B, conductive layer 342 is provided below insulating layer 345. Conductive layer 342 is embedded in insulating layer 335, and the bottom surfaces of conductive layer 342 and insulating layer 335 are flattened. Conductive layer 342 is electrically connected to plug 343.

[0219] On the other hand, in the substrate 301A, a conductive layer 341 is provided over the insulating layer 346. The conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0220] The conductive layers 341 and 342 are preferably made of the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing these elements (such as a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) can be used. It is particularly preferred that copper be used for the conductive layers 341 and 342. This allows for the use of Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical continuity by connecting Cu (copper) pads to each other).

[0221] [Display panel 200C] Figure 17 The display panel 200C shown has a structure in which a conductive layer 341 and a conductive layer 342 are connected via a bump 347 .

[0222] like Figure 17 As shown, by providing a bump 347 between conductive layer 341 and conductive layer 342, conductive layer 341 and conductive layer 342 can be electrically connected. Bump 347 can be formed using a conductive material such as gold (Au), nickel (Ni), indium (In), or tin (Sn). For example, solder is sometimes used as bump 347. Furthermore, an adhesive layer 348 may be provided between insulating layer 345 and insulating layer 346. Furthermore, when providing bump 347, insulating layer 335 and insulating layer 336 may not be provided.

[0223] [Display panel 200D] Figure 18 The main difference between the display panel 200D shown and the display panel 200A lies in the structure of transistors.

[0224] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used in a semiconductor layer forming a channel.

[0225] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0226] Substrate 331 is equivalent to Figure 14A and Figure 14B The substrate 291 in FIG.

[0227] An insulating layer 332 is provided over the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from escaping from the semiconductor layer 321 toward the insulating layer 332. For example, a film into which hydrogen and oxygen are less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used as the insulating layer 332.

[0228] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 serves as a first gate electrode of the transistor 320, and a portion of the insulating layer 326 serves as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least the portion of the insulating layer 326 that contacts the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0229] The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film exhibiting semiconductor characteristics. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0230] An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and the insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 serves as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the insulating layer 264 into the semiconductor layer 321 and oxygen from being released from the semiconductor layer 321. As the insulating layer 328, an insulating film similar to the insulating layer 332 described above can be used.

[0231] Insulating layer 328 and insulating layer 264 have openings that reach semiconductor layer 321. Embedded within these openings are insulating layer 323, which contacts the top surface of semiconductor layer 321, and conductive layer 324. Conductive layer 324 functions as a second gate electrode, and insulating layer 323 functions as a second gate insulating layer.

[0232] The top surfaces of the conductive layer 324 , the insulating layer 323 , and the insulating layer 264 are planarized so that their heights are uniform or substantially uniform, and the insulating layer 329 and the insulating layer 265 are provided to cover them.

[0233] The insulating layer 264 and the insulating layer 265 serve as interlayer insulating layers. The insulating layer 329 serves as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the insulating layer 265 and the like into the transistor 320. The insulating layer 329 can be an insulating film similar to the insulating layer 328 and the insulating layer 332 described above.

[0234] Plug 274, electrically connected to one of the pair of conductive layers 325, is embedded in insulating layer 265, insulating layer 329, and insulating layer 264. Plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings in insulating layers 265, 329, 264, and 328, and a portion of the top surface of conductive layer 325, and a conductive layer 274b in contact with the top surface of conductive layer 274a. A conductive material that is not easily diffused by hydrogen and oxygen is preferably used for conductive layer 274a.

[0235] There are no particular limitations on the structure of the transistors included in the display panel of this embodiment. For example, planar transistors, staggered transistors, or inversely staggered transistors may be used. Furthermore, top-gate or bottom-gate transistor structures may be employed. Alternatively, gate electrodes may be provided above and below the semiconductor layer forming the channel.

[0236] As transistor 320, a structure is employed in which two gates sandwich a semiconductor layer forming a channel. Alternatively, the two gates may be connected and the transistor may be driven by supplying the same signal to both gates. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0237] There are no particular restrictions on the crystallinity of the semiconductor material used for the semiconductor layer of the transistor. An amorphous semiconductor, a single crystal semiconductor, or a crystalline semiconductor other than a single crystal semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. Using a single crystal semiconductor or a crystalline semiconductor is preferred because it can suppress degradation of transistor characteristics.

[0238] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide with a wide band gap, the off-state current of the OS transistor can be reduced.

[0239] The metal oxide preferably contains at least indium or zinc, more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0240] Alternatively, the semiconductor layer of the transistor may also include silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.).

[0241] Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. Furthermore, the metal oxide preferably contains two or three selected from indium, element M, and zinc. Element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0242] Note that when a metal oxide is used for the semiconductor layer, it is preferably formed by sputtering or ALD. Sputtering can improve productivity and film density. ALD can improve film coverage.

[0243] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)) is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, aluminum, and zinc (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO) is preferably used.

[0244] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or in the vicinity thereof, a composition of In:M:Zn=1:1:1.2 or in the vicinity thereof, a composition of In:M:Zn=1:3:2 or in the vicinity thereof, a composition of In:M:Zn=1:3:4 or in the vicinity thereof, a composition of In:M:Zn=2:1:3 or in the vicinity thereof, a composition of In:M:Zn=3:1:2 or in the vicinity thereof, and a composition of In:M:Zn=1:3:4 or in the vicinity thereof. Compositions of Zn = 4:2:3 or in the vicinity thereof, compositions of In:M:Zn = 4:2:4.1 or in the vicinity thereof, compositions of In:M:Zn = 5:1:3 or in the vicinity thereof, compositions of In:M:Zn = 5:1:6 or in the vicinity thereof, compositions of In:M:Zn = 5:1:7 or in the vicinity thereof, compositions of In:M:Zn = 5:1:8 or in the vicinity thereof, compositions of In:M:Zn = 6:1:6 or in the vicinity thereof, and compositions of In:M:Zn = 5:2:5 or in the vicinity thereof. Note that the near compositions include a range of ±30% of the desired atomic number ratio.

[0245] Gallium or tin is preferably used as the element M. Alternatively, a combination of multiple elements may be used as the element M. Furthermore, a metal oxide having a ratio of In:M:Zn = 40:1:10 or a ratio thereof is preferably used as the semiconductor layer. Specifically, a metal oxide having a ratio of In:Sn:Zn = 40:1:10 or a ratio thereof is preferably used.

[0246] For example, a composition described as having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabouts includes the following: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Furthermore, a composition described as having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabouts includes the following: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. Furthermore, a composition described as having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabouts includes the following: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0247] The semiconductor layer may also include two or more metal oxide layers with different compositions. For example, a stacked structure may be suitably constructed of a first metal oxide layer having an atomic ratio of In:M:Zn = 1:3:4 or approximately thereabouts, and a second metal oxide layer having an atomic ratio of In:M:Zn = 1:1:1 or approximately thereabouts, disposed on the first metal oxide layer. Gallium or aluminum is particularly preferably used as the element M.

[0248] Alternatively, for example, a stacked-layer structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0249] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0250] Compared to transistors using amorphous silicon, OS transistors have significantly higher field-effect mobility. Furthermore, when an OS transistor is off, the source-drain leakage current (also known as off-state current) is extremely low, allowing it to retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce power consumption in display panels.

[0251] Furthermore, to increase the brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the driver transistor included in the pixel circuit. Because the source-drain withstand voltage of an OS transistor is higher than that of a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driver transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the brightness of the light-emitting device.

[0252] Furthermore, when operating in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage than Si transistors. Therefore, by using OS transistors as driver transistors in pixel circuits, the current flowing between the source and drain can be precisely determined based on changes in gate-source voltage, allowing the amount of current flowing through the light-emitting device to be controlled. This increases the number of grayscales in the pixel circuit.

[0253] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when operating in its saturation region, compared to Si transistors, OS transistors can allow a stable current (saturation current) to flow even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as a driver transistor, a stable current can flow through the light-emitting device even if, for example, the current-voltage characteristics of an EL device are uneven. In other words, when an OS transistor operates in its saturation region, even when the source-drain voltage is increased, the source-drain current remains virtually unchanged, thereby stabilizing the luminous brightness of the light-emitting device.

[0254] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "reduction in power consumption", "increase in luminance", "multi-gradation", "suppression of unevenness in light-emitting devices", etc.

[0255] [Display panel 200F] exist Figure 19 In the display panel 200F shown, a transistor 310 having a channel formed in a substrate 301 and a transistor 320 having a semiconductor layer containing a metal oxide forming the channel are stacked.

[0256] An insulating layer 261 is provided to cover transistor 310, and a conductive layer 251 is provided over insulating layer 261. Furthermore, an insulating layer 262 is provided to cover conductive layer 251, and conductive layer 252 is provided over insulating layer 262. Both conductive layer 251 and conductive layer 252 function as wiring. Furthermore, an insulating layer 263 and an insulating layer 332 are provided to cover conductive layer 252, and transistor 320 is provided over insulating layer 332. Furthermore, an insulating layer 265 is provided to cover transistor 320, and capacitor 240 is provided over insulating layer 265. Capacitor 240 is electrically connected to transistor 320 via plug 274.

[0257] Transistor 320 can be used as a transistor constituting a pixel circuit. Furthermore, transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits and memory circuits.

[0258] With this structure, not only the pixel circuit but also the driver circuit can be formed directly under the light-emitting device, so the display panel can be miniaturized compared to the case where the driver circuit is provided around the display area.

[0259] [Display Panel 200G] Figure 20 The display panel 200G shown has a structure in which a transistor 320A (vertical transistor) is used instead of a Figure 19 The structure of the transistor 320 of the display panel 200F shown in FIG. In addition, the structure using the transistor 320A instead of the transistor 320 can also be used for Figure 18 The display panel 200D is shown.

[0260] Figure 21A 320A is a cross-sectional view of the transistor 320A taken along the XZ plane. Figure 21B It is a cross-sectional view taken along the XY plane including the wiring 440 .

[0261] Transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. Oxide semiconductor 470 serves as a semiconductor layer, insulator 430 serves as a gate insulator, and conductor 420 serves as a gate electrode. Furthermore, wiring 450 includes a region serving as one of the source and drain electrodes of transistor 320A. Furthermore, wiring 440 includes a region serving as the other of the source and drain electrodes of transistor 320A.

[0262] An opening 490 is provided to reach wiring 450, penetrating wiring 440 and insulator 480. The top surface of opening 490 has a generally circular columnar shape. This structure enables miniaturization and high integration of transistors. Note that the side surfaces of opening 490 are preferably perpendicular to the top surface of wiring 450.

[0263] At least a portion of the oxide semiconductor 470 is disposed in the opening 490 . The oxide semiconductor 470 includes a region in contact with the top surface of the wiring 450 , a region in contact with the side surface of the wiring 440 , and a region in contact with the side surface of the insulator 480 in the opening 490 .

[0264] The insulator 430 is arranged so that at least a portion thereof covers the opening 490. The conductor 420 is arranged so that at least a portion thereof is located in the opening 490. Note that the conductor 420 is preferably provided so as to be embedded in the opening 490, and its top surface is preferably substantially circular in shape to improve integration.

[0265] like Figure 21A As shown, the oxide semiconductor 470 includes a region 470 i , and regions 470 na and 470 nb provided so as to sandwich the region 470 i .

[0266] The region 470na is a region in the oxide semiconductor 470 that is in contact with the wiring 450. At least a portion of the region 470na is used as one of the source region and the drain region of the transistor 320A. The region 470nb is a region in the oxide semiconductor 470 that is in contact with the wiring 440. At least a portion of the region 470nb is used as the other of the source region and the drain region of the transistor 320A. Figure 21B As shown, the wiring 440 is in contact with the entire periphery of the oxide semiconductor 470. Therefore, the other of the source region and the drain region of the transistor 320A may be formed on the entire periphery of the portion of the oxide semiconductor 470 formed in the same layer as the wiring 440.

[0267] Region 470i is a region between region 470na and region 470nb in oxide semiconductor 470. At least a portion of region 470i serves as a channel formation region for transistor 320A. In other words, the channel formation region of transistor 320A is formed in a portion of oxide semiconductor 470 located between wiring 450 and wiring 440. Alternatively, the channel formation region of transistor 320A can be said to be located in a region of oxide semiconductor 470 that contacts insulator 480 or in a region near the region.

[0268] The channel length of the transistor 320A is the distance between the source region and the drain region. In other words, the channel length of the transistor 320A is determined by the thickness of the insulator 480 on the wiring 450. Figure 21A , the dotted double-headed arrow indicates the channel length L of the transistor 320A. In a cross-sectional view, the channel length L is the distance between the end of the region where the oxide semiconductor 470 contacts the wiring 450 and the end of the region where the oxide semiconductor 470 contacts the wiring 440. In other words, the channel length L corresponds to the length of the side surface of the insulator 480 on the side of the opening 490 in a cross-sectional view.

[0269] In conventional transistors, the channel length is set based on the exposure limit of photolithography. However, in one embodiment of the present invention, the channel length can be set based on the thickness of insulator 480. Therefore, the channel length of transistor 320A can be set to a very fine structure below the exposure limit of photolithography (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more, or 5 nm or more). This can increase the on-state current of transistor 320A.

[0270] Furthermore, as described above, a channel formation region, a source region, and a drain region can be formed in the opening 490. Therefore, compared to conventional transistors in which the channel formation region, source region, and drain region are provided separately on the XY plane, the area occupied by the transistor 320A can be reduced. Consequently, pixel density can be increased.

[0271] In this manner, a transistor having a channel formation region along the side surface of the insulator 480 in the opening 490 is also referred to as a vertical transistor.

[0272] In addition, on the XY plane including the channel formation region of the oxide semiconductor 470, Figure 21B Similarly, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged in a concentric circle. Therefore, the side surface of the conductor 420 arranged in the center is opposite to the side surface of the oxide semiconductor 470 via the insulator 430. In other words, the entire periphery of the oxide semiconductor 470 becomes a channel formation region when viewed from above. At this time, for example, the channel width of the transistor 320A is determined by the length of the periphery of the oxide semiconductor 470. That is, it can be said that the channel width of the transistor 320A is determined by the size of the maximum width of the opening 490 (the maximum diameter when the shape of the opening 490 when viewed from above is circular). Figure 21A and Figure 21B In FIG, the double-dot chain line double arrow indicates the maximum width D of the opening 490. Figure 21BIn FIG, a double-dot chain arrow indicates the channel width W of the transistor 320A. By increasing the maximum width D of the opening 490, the channel width per unit area can be increased, thereby increasing the on-state current.

[0273] When the opening 490 is formed using photolithography, the maximum width D of the opening 490 is set based on the exposure limit of the photolithography. Furthermore, the maximum width D of the opening 490 is set based on the thicknesses of the oxide semiconductor 470, the insulator 430, and the conductor 420 provided in the opening 490. The maximum width D of the opening 490 is preferably, for example, not less than 5 nm, not less than 10 nm, or not less than 20 nm, and not more than 100 nm, not more than 60 nm, not more than 50 nm, not more than 40 nm, or not more than 30 nm. Note that when the opening 490 is circular in plan view, the maximum width D of the opening 490 corresponds to the diameter of the opening 490, and the channel width W can be calculated as "D×π."

[0274] In the memory device according to one embodiment of the present invention, the channel length L of the transistor 320A is preferably smaller than at least the channel width W of the transistor 320A. The channel length L of the transistor 320A according to one embodiment of the present invention is not less than 0.1 times and not more than 0.99 times, and preferably not less than 0.5 times and not more than 0.8 times, the channel width W of the transistor 320A. This structure enables a transistor with excellent electrical characteristics and high reliability to be realized.

[0275] Furthermore, by forming the opening 490 to be substantially circular in plan view, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged concentrically. This makes the distance between the conductor 420 and the oxide semiconductor 470 substantially uniform, allowing a substantially uniform gate electric field to be applied to the oxide semiconductor 470.

[0276] In the channel formation region of a transistor using an oxide semiconductor as a semiconductor layer, it is preferable that the number of oxygen vacancies or the concentration of impurities such as hydrogen, nitrogen, and metal elements is low compared to the source and drain regions. In addition, hydrogen near the oxygen vacancies may form defects (hereinafter sometimes referred to as V O H) and generate electrons that become carriers, so in the channel formation region V O H is also preferably reduced. Thus, the channel formation region of the transistor is a high-resistance region with a low carrier concentration. Therefore, the channel formation region of the transistor can be said to be i-type (intrinsic) or substantially i-type.

[0277] In addition, the source region and drain region of a transistor using an oxide semiconductor for a semiconductor layer are regions where oxygen vacancies are more numerous than in a channel formation region, and V OThe high H content or high concentration of impurities such as hydrogen, nitrogen, or metal elements increases the carrier concentration, thereby reducing resistance. That is, the source and drain regions of the transistor are n-type regions with higher carrier concentrations and lower resistance than the channel formation region.

[0278] Note that in Figure 21A In the embodiment of the present invention, the side surface of the opening 490 is perpendicular to the top surface of the wiring 450. However, the present invention is not limited thereto. For example, the side surface of the opening 490 may be tapered.

[0279] Figure 22A 21 is a cross-sectional view taken along the XZ plane of a transistor 320B which is a vertical transistor having a structure different from that of FIG. Figure 22B It is a cross-sectional view in the XY plane.

[0280] The transistor 320B differs from the transistor 320A mainly in that it does not include the wiring 450, is provided over the insulator 460, includes wirings 440S and 440D instead of the wiring 440, and has the shape of the oxide semiconductor 470. The wiring 440S serves as a source electrode, and the wiring 440D serves as a drain electrode.

[0281] The oxide semiconductor 470 has a ring shape. Specifically, the opening 490 includes a region in contact with the side surface of the wiring 440S, a region in contact with the side surface of the wiring 440D, and a region in contact with the side surface of the insulator 480. The oxide semiconductor 470 does not contact the top surfaces of the wiring 440S and the wiring 440D. The oxide semiconductor 470 having the above shape can be formed by processing using anisotropic etching, for example.

[0282] like Figure 22B As shown, the width H of wiring 440S and wiring 440D is smaller than the maximum width D of opening 490. In this case, the circumferential direction of opening 490 corresponds to the channel length direction of transistor 320B. Here, because oxide semiconductor 470 has a ring shape, there are two current paths (i.e., channels) from wiring 440S to wiring 440D. In addition, oxide semiconductor 470 does not necessarily need to have a ring shape and can also have a structure that contacts both wiring 440S and wiring 440D.

[0283] The channel length can be controlled based on the shape and size of the opening 490. For example, if the channel length is desired to be increased, the circumference of the opening 490 can be increased. Note that while the example shown here shows a circular shape for the opening 490 when viewed from above, the present invention is not limited to this. For example, the shape of the opening 490 when viewed from above can be an ellipse, a quadrilateral with rounded corners, or the like, in addition to a circle. Furthermore, regular polygons such as regular triangles, squares, and regular pentagons, as well as polygons other than regular polygons, can also be used. Furthermore, the channel width can be increased for concave polygons such as star-shaped polygons, where at least one internal angle exceeds 180 degrees. Alternatively, an ellipse, a polygon with rounded corners, or a closed curve combining straight and curved lines can be used. In this case, the maximum width of the opening 490 is preferably calculated based on the shape of the top portion of the opening 490. For example, if the opening is square or rectangular when viewed from above, the maximum width of the opening 490 is preferably set to the length of the opposing line at the top of the opening 490.

[0284] In addition, if Figure 22A As shown, the height of the oxide semiconductor 470 corresponds to the channel width W of the transistor 320B. Therefore, the channel width W of the transistor 320B can be controlled by the thickness of the insulator 480. Therefore, the channel width of the transistor 320B can be set to a very fine structure below the exposure limit of the photolithography method (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more).

[0285] Transistor 320A is a transistor that can make the channel length extremely small and increase the channel width, which can achieve high on-state current. On the other hand, transistor 320B is a transistor that can make the channel width extremely small and increase the channel length, which can achieve appropriate on-state current and is easy to design. Transistor 320A and transistor 320B can be part of the manufacturing process and can be manufactured separately on the same substrate. For example, in a display device, transistor 320B can be used as a driving transistor for controlling the current flowing through the light-emitting element, and transistor 320A can be used as a transistor with a switching function.

[0286] At least a part of this embodiment mode can be implemented in combination with other embodiment modes and examples described in this specification as appropriate. [Explanation of symbols]

[0287] PIX_A: pixel, PIX_B: pixel, PIX_C: pixel, 10: electronic device, 11: case, 12: bezel, 13: watch mirror, 14: watch band, 20: eyepiece, 30: display panel, 32: linear polarizer, 33: phase difference plate, 41: element, 42: element, 45: optical unit, 52: layer, 53: phase difference plate, 54: reflective polarizer, 70: pixel, 71: sub-pixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 100a: display panel, 100b: display panel, 100: display panel, 101: substrate, 110a: light-emitting element, 110B: light-emitting element, 110b: light-emitting element, 110c : Light-emitting element, 110G: Light-emitting element, 110R: Light-emitting element, 110W: Light-emitting element, 110: Light-emitting element, 111B: Pixel electrode, 111C: Connecting electrode, 111G: Pixel electrode, 111R: Pixel electrode, 111: Pixel electrode, 112B: Organic layer, 112G: Organic layer, 112R: Organic layer, 112W: Organic layer, 112: Organic layer, 113: Common electrode, 114: Common layer, 115B: Conductive layer, 115G: Conductive layer, 115R: Conductive layer, 116B: Coloring layer, 116G: Coloring layer, 116R: Coloring layer, 121: Protective layer, 122: Insulating layer, 123: Insulating layer, 124a: Pixel, 124b: Pixel, 1 25: Insulating layer, 126: Resin layer, 128: Layer, 140: Connecting portion, 150: Pixel, 170: Substrate, 171: Adhesive layer, 200A: Display panel, 200B: Display panel, 200C: Display panel, 200D: Display panel, 200F: Display panel, 200G: Display panel, 240: Capacitor, 241: Conductive layer, 243: Insulating layer, 245: Conductive layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 264: Insulating layer, 265: Insulating layer, 271: Plug, 27 4a: Conductive layer, 274b: Conductive layer, 274: Plug, 280: Display module, 281: Display unit, 282: Circuit unit, 283a: Pixel circuit, 283: Pixel circuit unit, 284a: Pixel, 284: Pixel unit, 285: Terminal unit, 286: Wiring unit, 290: FPC, 291: Substrate, 292: Substrate, 301A: Substrate, 301B: Substrate, 301: Substrate, 310A: Transistor, 310B: Transistor, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor, 320: Transistor, 321: Semiconductor layer,323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 420: Conductor, 430: Insulator, 440D: Wiring, 440S: Wiring, 440: Wiring, 450: Wiring, 460: Insulator, 470i: Region, 470na: Region, 470nb: Region, 470: Oxide semiconductor, 480: Insulator, 490: Opening,

Claims

1. A watch-type electronic device, comprising: watch case; bezel; Display panel; as well as optical equipment, The display panel and the optical device are arranged in an area surrounded by the watch case and the watch ring. The light emitted by the display panel can be emitted by the optical device, The optical device comprises a first element fixed to the bezel, Furthermore, by rotating the bezel, a first mode in which the display of the display panel can be viewed from a distance and a second mode in which the display of the display panel can be viewed from a close distance can be switched.

2. The electronic device according to claim 1, The optical device comprises a first circular polarizer, a half mirror and a second circular polarizer, The half mirror is arranged between the first circular polarizer and the second circular polarizer, The half mirror has a curved surface with the second circular polarizer side being concave, And the second circular polarizer is arranged on one side of the bezel.

3. The electronic device according to claim 2, The first circular polarizer includes a linear polarizer and a first phase difference plate. Furthermore, the second circular polarizer includes a second phase difference plate and a reflective polarizer.

4. The electronic device according to claim 3, The reflective polarizer is the first element.

5. The electronic device according to claim 2, wherein the half mirror is sandwiched between the second element and the third element, Furthermore, the difference between the refractive index of the second element and the refractive index of the third element is 0.3 or less.

6. The electronic device according to claim 5, The surface of the second element opposite to the half mirror and the surface of the third element opposite to the half mirror are both flat surfaces.

7. The electronic device according to any one of claims 1 to 6, The rotation angle of the bezel is 90°.

8. The electronic device according to any one of claims 1 to 6, The display panel includes an organic EL element.

9. The electronic device according to any one of claims 1 to 6, further comprising a watch mirror fixed to the watch ring. The light emitted by the display panel can be emitted to the outside through the optical device and the watch mirror.

10. A method for operating a watch-type electronic device including a display panel, in, You can switch between the first mode for long-distance viewing and the second mode for close-up viewing. In the first mode, the image signal is input to drive part of the pixels included in the display panel. Furthermore, in the second mode, all pixels included in the display panel are driven by inputting image signals.

11. The operating method of the electronic device according to claim 10, The first mode and the second mode are switched by rotating an element of the optical device fixed to the bezel.

Images