Single-component cleaning agent composition as well as preparation method and application thereof

Abstract

The invention provides a single-component cleaning agent composition and a preparation method and application thereof.The single-component cleaning agent composition is prepared from, by weight, 0.5-10 parts of inorganic alkali, 0.5-8 parts of alkali-soluble wetting agent, 0.1-1 part of polymeric dispersant, 1-5 parts of oxidizing agent, 1-6 parts of pH buffering agent and 80-100 parts of water; in a liquid phase environment with a pH value of 10-12 and a temperature of 25 + / -2 DEG C, the solubility of the alkali-soluble wetting agent is 400-1000 g / L. The formula of the single-component cleaning agent is finely designed, and through reasonable combination and proportion control of multiple components, the obtained single-component cleaning agent composition can provide an efficient cleaning effect for silicon wafers under the conditions of stable pH value and temperature.

Description

Technical Field

[0001] The present invention relates to the technical field of cleaning agents, and in particular to a single-component cleaning agent composition, a preparation method thereof, and applications thereof. Background Art

[0002] In the semiconductor manufacturing process, silicon wafer cleaning is a critical step in ensuring product quality and yield. Silicon wafers are susceptible to a variety of contaminants during production, storage, and subsequent processing. These contaminants include organic matter (such as oil and dust), inorganic matter (such as metal ions and oxides), and tiny particles. Cleaning agents are crucial for removing these contaminants. In recent years, with the continuous advancement of semiconductor technology, especially the miniaturization and high density of integrated circuits, the performance requirements for silicon wafer cleaning agents have become increasingly stringent.

[0003] Currently, common silicon wafer cleaning agents on the market are all two-component formulas. These cleaning agents are typically composed of an alkaline component (such as sodium hydroxide) and other auxiliary ingredients (such as surfactants and chelating agents). The alkaline component can effectively remove organic contaminants from the silicon wafer surface, while the auxiliary ingredients help improve the cleaning agent's surface activity and decontamination ability. In actual applications, two-component cleaning agents can be optimized for different types of contaminants, thereby achieving a more ideal cleaning effect. However, due to the incompatibility of the two components of silicon wafer cleaning agents, existing two-component silicon wafer cleaning agents still have some shortcomings in practical applications:

[0004] (1) Operational complexity. Since the two components need to be mixed in a certain ratio, the operator must ensure accurate proportions and sufficient mixing during use. This not only increases the difficulty of operation, but also places higher demands on the operator's skill level, which can easily lead to unsatisfactory cleaning results due to improper operation.

[0005] (2) The formula stability of two-component cleaning agents is poor. During use, their performance is often sensitive to slight changes in the environment, resulting in fluctuations in the cleaning effect during use. This instability may lead to incomplete cleaning or uneven cleaning results during the cleaning process, thereby affecting the subsequent processing of silicon wafers and the quality of the final product.

[0006] (3) Low cleaning capacity. Since the two components are insoluble in each other, the removal efficiency of aqueous and oily components is different. Additional pure water overflow is required to avoid chemical residue. When the number of cleaning tanks is fixed, the number of silicon wafers cleaned per unit time by the two-component cleaning agent is small.

[0007] To address the aforementioned shortcomings of two-component cleaning agents, single-component cleaning agents emerged. Under equivalent dosage and process conditions, these agents offer cleaning efficiency nearly equal to that of existing two-component cleaning agents. Furthermore, single-component cleaning agents require only a fixed amount of addition, eliminating the need for mixing or proportioning. However, while existing single-component cleaning agents are simpler to operate than two-component cleaning agents, their cleaning effectiveness, particularly under prolonged cleaning conditions, remains subpar.

[0008] Based on this, how to design the component formula of a single-component cleaning agent to obtain a single-component cleaning agent with better cleaning effect is one of the important technical problems that need to be solved in this field. Summary of the Invention

[0009] The main purpose of the present invention is to provide a single-component cleaning agent composition, a preparation method and application thereof, so as to solve the problem that the single-component cleaning agent composition in the prior art has a poor cleaning effect on silicon wafers.

[0010] To achieve the above-mentioned objectives, the first aspect of the present invention provides a one-component cleaning agent composition, which comprises, by weight, 0.5 to 10 parts of an inorganic base, 0.5 to 8 parts of an alkali-soluble wetting agent, 0.1 to 1 part of a polymer dispersant, 1 to 5 parts of an oxidizing agent, 1 to 6 parts of a pH buffer, and 80 to 100 parts of water; in a liquid phase environment at a pH of 10 to 12 and a temperature of 25±2°C, the solubility of the alkali-soluble wetting agent is 400 g / L to 1000 g / L.

[0011] Furthermore, the molecular structure of the alkali-soluble wetting agent contains polyethylene glycol segments and / or glycoside groups; preferably, the alkali-soluble wetting agent is selected from one or more of hexyl D-glycoside, α-2-ethylhexyl-ω-hydroxypolyethylene glycol, isooctyl alcohol polyoxyethylene ether phosphate AEP and D-pyranose.

[0012] Furthermore, in a liquid environment with a pH of 10 to 12 and a temperature of 25±2°C, the solubility of the polymer dispersant is 100 g / L to 450 g / L; preferably, the polymer dispersant is selected from one or more of polyacrylic acid dispersants, modified polyurethane dispersants and cellulose dispersants, and the molecular weight of the polymer dispersant is 10,000 to 200,000.

[0013] Furthermore, the oxidant is selected from one of hydrogen peroxide, sodium hypochlorite, sodium thiosulfate and hydroxylamine hydrochloride.

[0014] Furthermore, the pH buffer is selected from one or more of sodium glycine, sodium citrate and sodium acetate.

[0015] Furthermore, the inorganic base is sodium hydroxide and / or potassium hydroxide.

[0016] Furthermore, the one-component cleaning agent composition includes, by weight, 3 to 9 parts of an inorganic base, 1 to 3 parts of an alkali-soluble wetting agent, 0.1 to 0.8 parts of a polymer dispersant, 1 to 3 parts of an oxidizing agent, 2 to 5 parts of a pH buffer, and 85 to 95 parts of water.

[0017] Furthermore, the one-component cleaning agent composition includes, by weight, 3 to 6 parts of sodium hydroxide, 1 to 2 parts of an alkali-soluble wetting agent, 0.1 to 0.5 parts of a polymer dispersant, 1 to 2 parts of an oxidizing agent, 2 to 4 parts of a pH buffer, and 86.5 to 93.0 parts of water.

[0018] A second aspect of the present invention provides a method for preparing the above-mentioned one-component cleaning agent composition, comprising: step S1, adding an inorganic base to a portion of water, and performing a first stirring to obtain a first mixed solution; step S2, sequentially adding a polymer dispersant, a pH buffer, and an alkali-soluble wetting agent to the first mixed solution, and performing a second stirring to obtain a second mixed solution; step S3, sequentially adding another portion of water and an oxidant to the second mixed solution, and performing a third stirring to obtain the one-component cleaning agent composition.

[0019] A third aspect of the present invention provides a use of the above-mentioned one-component cleaning agent composition as a silicon wafer cleaning agent in the field of semiconductor manufacturing.

[0020] The technical solution of the present invention meticulously designs a single-component cleaning agent formulation. Through the rational combination and controlled proportions of multiple ingredients, the resulting single-component cleaning agent composition is able to provide efficient cleaning results for silicon wafers under stable pH and temperature conditions. In particular, the inclusion of a special alkaline-soluble wetting agent ensures the chemical stability of the resulting cleaning agent composition, while effectively stripping impurities such as silicon powder from the silicon wafer surface, resulting in highly efficient cleaning results. DETAILED DESCRIPTION

[0021] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the embodiments.

[0022] As described in the background art, single-component cleaning agents in the prior art have the problem of poor cleaning effect on silicon wafers under long-term cleaning conditions. To solve the above technical problems, the first aspect of the present invention provides a single-component cleaning agent composition, which comprises, by weight, 0.5 to 10 parts of an inorganic base, 0.5 to 8 parts of an alkali-soluble wetting agent, 0.1 to 1 part of a polymer dispersant, 1 to 5 parts of an oxidizing agent, 1 to 6 parts of a pH buffer, and 80 to 100 parts of water. In a liquid phase environment with a pH of 10 to 12 and a temperature of 25±2°C, the solubility of the alkali-soluble wetting agent is 400 g / L to 1000 g / L.

[0023] The single-component cleaning agent composition provided by the present invention achieves efficient and stable cleaning of silicon wafers by carefully adjusting the types, amounts, and interactions of the various components, overcoming the complexity of use and unstable effects of traditional two-component cleaning agents. In the cleaning agent composition formula, 0.5 to 10 parts of an inorganic base provides the necessary alkaline environment to promote the decomposition of organic contaminants on the silicon wafer surface. By effectively reacting with oil and fat contaminants, it forms soluble salts or alcohols, which are then washed away with water. Simultaneously, the alkaline conditions formed by the inorganic base are also significantly effective in removing oxides and metal ions from the silicon wafer. The addition of 0.5 to 8 parts of an alkali-soluble wetting agent reduces the interfacial tension between the cleaning agent composition and the silicon wafer surface, allowing the cleaning agent to spread more evenly on the silicon wafer, helping the cleaning agent composition to better contact dirt and stains. It also effectively removes impurities such as silicon powder from the silicon wafer surface, thereby improving the cleaning effect. Furthermore, the alkali-soluble wetting agent in the above amount is concentrated and spread evenly on the surface of the silicon wafer, effectively preventing alkaline substances from excessively corroding the silicon wafer. The role of 0.1-1 parts of polymer dispersant is to disperse the pollutants removed during the cleaning process in the solution, making it easier for alkaline substances to react with them, while also preventing redeposition, effectively improving cleaning efficiency. This dispersion effect is crucial to maintaining the cleanliness of the cleaning agent, especially for cleaning processes containing tiny particles of pollutants.

[0024] 1-5 parts of an oxidizing agent can accelerate the reaction between alkaline substances and contaminants. This is especially true for difficult-to-remove organic matter, which can be oxidized into more water-soluble substances, thereby improving cleaning efficiency and cleanliness. It's important to note that silicon powder is one of the main contaminants in silicon wafer cleaning, and inorganic bases are generally effective in removing it. However, the presence of surfactants in the same solution system can reduce the efficiency of the reaction between the inorganic base and silicon powder. A common solution involves adjusting the ratio of the inorganic base to the surfactant in different cleaning tanks, a principle underlying existing two-component silicon wafer cleaning agents. This invention, however, abandons this two-component cleaning method and instead adds an appropriate oxidizing agent at 1-5 parts to effectively oxidize free silicon powder into a silicon oxide intermediate. In reality, the resulting intermediate is unstable and easily decomposes spontaneously back into elemental silicon. However, under the appropriate inorganic base content conditions provided by this invention, the intermediate preferentially reacts into silicates. In summary, from a macroscopic perspective, the oxidizing agent catalyzes the reaction between silicon powder and the inorganic base, reducing the inhibitory effect of the surfactant on this reaction. The addition of 1 to 6 parts of pH buffer plays a negative feedback role in regulating the pH value of the cleaning agent composition, so as to maintain the pH value of the cleaning agent composition within the alkaline range, avoiding the pH drop caused by the consumption of alkaline substances during the cleaning process, and thus ensuring the continued effectiveness of the cleaning agent.

[0025] In particular, for the cleaning composition provided by the present invention, the solubility of the wetting agent is required to reach 400g / L to 1000g / L, or more preferably 400g / L to 700g / L, at a pH of 10-12 and a temperature of 25±2°C, thereby ensuring its stability and surface activity in alkaline cleaning environments. The inventors have optimized the alkaline-solubility of the wetting agent through extensive experimentation, which helps improve the permeability and detergency of the single-component cleaning agent in which it is used, while also avoiding the decreased stability and deterioration of the cleaning effect caused by the antagonism between the wetting agent and the alkaline substance.

[0026] Through the rational combination and proportion control of the above components, the cleaning agent composition obtained by the present invention can provide an efficient cleaning effect under stable pH and temperature conditions. In the actual cleaning process, the inorganic base provides an alkaline environment, promoting the decomposition and dissolution of organic pollutants; the wetting agent reduces the interfacial tension between water and the silicon wafer surface, allowing the cleaning agent to spread and penetrate better; the dispersant ensures that the pollutants removed during the cleaning process can be evenly dispersed in the solution to avoid redeposition; the oxidant accelerates the oxidative decomposition of pollutants, improving the cleaning efficiency; the pH buffer maintains the pH value of the solution within an appropriate range, ensuring the activity of each component; and water acts as a solvent and carrier to ensure the uniform distribution of all components and the progress of chemical reactions. These components interact with each other to form a dynamically balanced cleaning system that acts together on the silicon wafer surface, significantly improving the cleaning effect while maintaining the stability of the cleaning agent and its mildness to the silicon wafer. In other words, the synergistic effect between the inorganic base, alkali-soluble wetting agent, polymer dispersant, oxidant, pH buffer and water provided by the present invention is the key to improving the cleaning effect. These components do not exist independently, but are interdependent and mutually reinforcing, forming a highly efficient cleaning system that ensures cleaning efficiency and silicon wafer quality over long periods of use.

[0027] Furthermore, the molecular structure of the alkali-soluble wetting agent contains polyethylene glycol segments and / or glycoside groups, so that the wetting agent has good water solubility and surface activity, so that the wetting agent can effectively reduce surface tension in the cleaning agent and improve its dispersibility and wetting ability. Wherein the polyethylene glycol segment has excellent fluid dynamics properties and can enhance the interfacial activity of the wetting agent, while the glycoside group can provide excellent hydrophilicity and biodegradability, making the cleaning agent more environmentally friendly. On this basis, it is preferred that the alkali-soluble wetting agent is selected from one or more of hexyl D-glycoside, α-2-ethylhexyl-ω-hydroxy polyethylene glycol, isooctyl polyoxyethylene ether phosphate AEP and D-pyranose. Compared with other compounds containing polyethylene glycol segments and / or glycoside groups, the wetting agent selected by the above inventors after extensive experiments has better solubility and stability under alkaline conditions of pH 10-12, thereby being able to more effectively synergize with inorganic bases to improve the cleaning efficiency of the cleaning composition in which it is contained.

[0028] Compared to α-2-ethylhexyl-ω-hydroxypolyethylene glycol and isooctyl polyoxyethylene ether phosphate (AEP), hexyl D-glucoside and / or D-pyranose glucopyranose are more preferred alkali-soluble wetting agents because the glycoside or pyranose structure of these two wetting agents provides stronger hydrophilicity, while the alkyl chain of the hexyl or glucose group provides lipophilicity. This balance of hydrophilicity and lipophilicity results in superior interfacial activity, significantly reducing the interfacial tension between water and oily or organic surfaces, promoting the spreading and penetration of the cleaning agent. Furthermore, hexyl D-glucoside and D-pyranose glucopyranose are both carbohydrate compounds. Compared to synthetic surfactants, their molecular structures are more stable and less susceptible to decomposition or structural changes in strong alkaline environments, maintaining their surface activity and dispersibility, resulting in a more robust and stable cleaning performance in the cleaning composition. Furthermore, hexyl D-glucoside and D-pyranose glucose molecules contain multiple hydroxyl groups (-OH). These hydroxyl groups undergo deprotonation in a strong alkaline environment (such as NaOH), generating negatively charged oxygen anions (-O-), which significantly increase the polarity and hydrophilicity of the molecules. This process enhances the interaction between the molecules and polar solvents (such as water or alkaline solutions), thereby promoting dissolution and achieving more efficient cleaning results.

[0029] With respect to the polymer dispersant, further, in a liquid environment with a pH of 10 to 12 and a temperature of 25±2°C, the solubility of the polymer dispersant is 100 g / L to 450 g / L, so that it can be stably present in the above-mentioned cleaning agent composition, provide more stable and efficient dispersion performance, effectively disperse the pollutants generated during the cleaning process, and thus enhance the cleaning ability of the cleaning agent composition in which it is located. Furthermore, the polymer dispersant is selected from one or more of polyacrylic acid dispersants, modified polyurethane dispersants and cellulose dispersants, and the molecular weight of the polymer dispersant is 10,000 to 200,000. Dispersants with the above-mentioned molecular weight characteristics can not only show stability under alkaline conditions, but also have good dispersing ability, reducing the poor dispersion effect caused by too low molecular weight or the solubility problem caused by too high molecular weight. In several preferred embodiments, the polymer dispersant is selected from one or more of polyacrylic acid dispersant Suractent 180S, polyacrylic acid dispersant Suractent 198ST, polyacrylic acid dispersant Suractent 8209S, modified polyurethane dispersant Anjeka 6190A, modified polyurethane dispersant SOLSPERSE 8000, cellulose dispersant CMC, cellulose dispersant HPC and cellulose dispersant HEC.

[0030] Specifically, in practical applications, the "liquid phase environment" mentioned above in the present invention is an aqueous solution system.

[0031] To further enhance the stability of the cleaning agent and reduce excessive oxidative damage to silicon wafers, the oxidizing agent is preferably selected from one of hydrogen peroxide, sodium hypochlorite, sodium thiosulfate, and hydroxylamine hydrochloride. Furthermore, to better complement the aforementioned alkaline-soluble wetting agent and polymer dispersant, enhance the stability of the cleaning composition over extended use, and ensure consistent and reliable cleaning results, the pH buffer is preferably selected from one or more of sodium glycine, sodium citrate, and sodium acetate. Furthermore, in several preferred embodiments, the inorganic base is sodium hydroxide and / or potassium hydroxide.

[0032] Furthermore, the one-component cleaning agent composition comprises, by weight, 3-9 parts of an inorganic base, 1-3 parts of an alkali-soluble wetting agent, 0.1-0.8 parts of a polymer dispersant, 1-3 parts of an oxidizing agent, 2-5 parts of a pH buffer, and 85-95 parts of water. This dosage relationship allows for better coordination between the components in the formulation, resulting in a one-component cleaning agent composition with superior cleaning performance. To further improve cleaning efficiency while minimizing potential damage to silicon wafers, in several preferred embodiments, the one-component cleaning agent composition comprises, by weight, 3-6 parts of sodium hydroxide, 1-2 parts of an alkali-soluble wetting agent, 0.1-0.5 parts of a polymer dispersant, 1-2 parts of an oxidizing agent, 2-4 parts of a pH buffer, and 86.5-93.0 parts of water.

[0033] In several more preferred embodiments, the one-component cleaning composition comprises, by weight, 3 parts sodium hydroxide, 1 part hexyl D-glucoside, 0.2 parts polyacrylic acid dispersant Suractent 180S, 1 part hydrogen peroxide, 3 parts sodium glycinate, and 91.8 parts water; or, by weight, the one-component cleaning composition comprises, by weight, 4 parts sodium hydroxide, 1 part D-pyranose glucopyranose, 0.5 parts cellulose dispersant CMC, 1.5 parts sodium thiosulfate, 2 parts sodium acetate, and 91 parts water; or, by weight, the one-component cleaning composition comprises, by weight, 3 parts sodium hydroxide, 1 part hexyl D-glucoside, 0.1 parts polyacrylic acid dispersant Suractent 180S, 1 part hydrogen peroxide, 2 parts sodium glycinate, and 92.9 parts water. The inventors conducted a more detailed screening of the one-component cleaning composition through extensive experiments and obtained the above three specific types and dosage formulas. The three-component cleaning agent compositions obtained have better compatibility between the alkali-soluble wetting agent, the polymer dispersant, the oxidant and the pH buffer, thereby exhibiting a more superior cleaning effect, especially during a long cleaning process, the cleaning effect is particularly stable and efficient.

[0034] A second aspect of the present invention provides a method for preparing the above-mentioned one-component cleaning agent composition, comprising: step S1, adding an inorganic base to a portion of water, and performing a first stirring to obtain a first mixed solution; step S2, sequentially adding a polymer dispersant, a pH buffer, and an alkali-soluble wetting agent to the first mixed solution, and performing a second stirring to obtain a second mixed solution; step S3, sequentially adding another portion of water and an oxidant to the second mixed solution, and performing a third stirring to obtain the one-component cleaning agent composition.

[0035] With respect to the above-mentioned single-component cleaning agent composition, the present invention provides a preparation method thereof accordingly. By adding each component step by step and controlling the stirring conditions, the uniformity and chemical stability of the cleaning agent composition are ensured. In step S1, the inorganic base is rapidly dissolved in water to form a uniform alkaline solution; thereafter, a polymer dispersant, a pH buffer, and an alkali-soluble wetting agent are sequentially added to the obtained alkaline solution to allow it to be fully mixed with the alkaline environment. Finally, in order to prevent the oxidant from self-decomposing under conditions of excessively high pH, after the other components form a stable system with water, another portion of water and the oxidant are added to the formed second mixed solution, so that the oxidant is uniformly dispersed under mild conditions, and finally a single-component cleaning agent composition with a better cleaning effect is obtained.

[0036] Furthermore, for the first stirring, the speed is preferably 300 rad / s to 400 rad / s and the duration is 20 min to 30 min to facilitate sufficient contact between the alkaline substance and the water, reduce the occurrence of locally overly concentrated alkaline environments, and facilitate the subsequent addition of wetting agents and dispersants. Meanwhile, the speed of the second stirring is preferably 300 rad / s to 400 rad / s and the duration is 20 min to 30 min to facilitate the rapid and uniform dispersion of subsequently added components such as polymer dispersants, pH buffers, and alkaline-soluble wetting agents in the alkaline solution, forming a stable homogeneous system and improving the uniformity and subsequent stability of the resulting cleaning composition.

[0037] For the third stirring step, the preferred speed is 100-150 rad / s for 40-50 minutes. This low-speed, long-term stirring condition is preferred primarily to reduce violent reactions and bubble generation after the addition of the oxidant, while also promoting uniform dispersion of the oxidant in the solution, forming a stable synergistic system with the alkaline environment and other components such as the wetting agent and dispersant, thereby ensuring superior cleaning performance in the resulting one-component cleaning composition.

[0038] A third aspect of the present invention provides the use of the above-mentioned one-component cleaning agent composition as a silicon wafer cleaning agent in the field of semiconductor manufacturing. The above-mentioned one-component cleaning agent composition obtained by the present invention has the advantages of simple operation, high cleaning efficiency, and good chemical stability, and is very suitable for cleaning silicon wafers in semiconductor manufacturing. In practical applications, this cleaning agent can not only effectively remove organic pollutants, inorganic impurities and tiny particles on the surface of silicon wafers, but also maintain the stability of the alkaline environment through the adjustment of pH buffer, thereby avoiding excessive corrosion or damage to the silicon wafer, maintaining the surface quality of the silicon wafer and compatibility with subsequent processes.

[0039] The present application is further described in detail below with reference to specific embodiments. These embodiments should not be construed as limiting the scope of protection claimed in this application.

[0040] Unless otherwise defined, all technical terms used hereinafter have the same meanings as those generally understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention.

[0041] The raw material information used in the present invention is as follows:

[0042] Hexyl D-glucoside, CAS No. 54549-24-5: The solubility is 720 g / L in a liquid environment at a pH of 12 and a temperature of 25°C.

[0043] α-2-Ethylhexyl-ω-hydroxypolyethylene glycol, CAS No. 26468-86-0: The solubility is 700g / L in a liquid environment at a pH of 12 and a temperature of 25°C.

[0044] Isooctanol polyoxyethylene ether phosphate AEP, CAS No. 68439-39-4: The solubility is 680g / L in a liquid environment with a pH of 12 and a temperature of 25°C.

[0045] D-pyranose, CAS No. 68515-73-1: The solubility is 500g / L in a liquid environment at a pH of 12 and a temperature of 25°C.

[0046] Polyacrylic acid dispersant Suractent180S: molecular weight is 800-1000; solubility is 450g / L in a liquid environment with a pH of 12 and a temperature of 25°C.

[0047] Polyacrylic acid dispersant Suractent198ST: molecular weight is 100,000-200,000; solubility is 350 g / L in a liquid environment with a pH of 12 and a temperature of 25°C.

[0048] Modified polyurethane dispersant SOLSPERSE8000: molecular weight is 5000-10000; in a liquid environment with a pH of 12 and a temperature of 25°C, the solubility is 100g / L.

[0049] Cellulose dispersant CMC: molecular weight is 20,000-100,000; in a liquid environment with a pH of 12 and a temperature of 25°C, the solubility is 450g / L.

[0050] Example 1

[0051] A method for preparing a one-component cleaning agent composition:

[0052] The raw material components of the one-component cleaning agent composition are shown in Table 1.

[0053] Step (1) adds 30 parts of deionized water to a stirring barrel, then adds an inorganic base, namely sodium hydroxide, and performs a first stirring at a speed of 300 rad / s for 30 minutes, avoiding vigorous heat release during stirring, to obtain a first mixed solution.

[0054] Step (2): Adding a polymer dispersant, i.e., a polyacrylic acid dispersant, Suractent 180S, a pH buffer, i.e., sodium glycinate, and an alkali-soluble wetting agent, i.e., hexyl D-glycoside, to the first mixed solution in sequence, and performing a second stirring at a speed of 400 rad / s for 20 min to obtain a second mixed solution.

[0055] Step (3): After adding the remaining portion of deionized water to the second mixed solution, an oxidant, namely hydrogen peroxide, is added, and a third stirring is performed at a rotation speed of 100 rad / s for 50 minutes to obtain a single-component cleaning agent composition.

[0056] Example 2

[0057] A method for preparing a one-component cleaning agent composition:

[0058] The raw material components of the one-component cleaning agent composition are shown in Table 1.

[0059] Step (1) adds 30 parts of deionized water to a stirring barrel, then adds an inorganic base, namely potassium hydroxide, and performs a first stirring at a speed of 400 rad / s for 20 minutes, avoiding vigorous heat release during stirring, to obtain a first mixed solution.

[0060] Step (2): Adding a polymer dispersant, i.e., a modified polyurethane dispersant SOLSPERSE 8000, a pH buffer, i.e., sodium citrate, and an alkali-soluble wetting agent, i.e., isooctyl polyoxyethylene ether phosphate AEP, to the first mixed solution in sequence, and performing a second stirring at a speed of 300 rad / s for 30 minutes to obtain a second mixed solution.

[0061] Step (3): After adding the remaining portion of deionized water to the second mixed solution, an oxidizing agent, namely sodium hypochlorite, is added, and a third stirring is performed at a rotation speed of 150 rad / s for 40 minutes to obtain a single-component cleaning agent composition.

[0062] Example 3 to Example 5

[0063] The only difference between Examples 3 to 5 and Example 1 is the raw material components and contents of the one-component cleaning composition, as shown in Table 1 for details.

[0064] Example 6

[0065] A method for preparing a one-component cleaning agent composition:

[0066] The only difference between this embodiment and embodiment 1 is that the speed of the first stirring in step (1) is changed to 200 rad / s and the time is changed to 40 min; the speed of the second stirring in step (2) is changed to 500 rad / s and the time is changed to 10 min.

[0067] Example 7

[0068] A method for preparing a one-component cleaning agent composition:

[0069] The only difference between this embodiment and embodiment 1 is that the rotation speed of the third stirring in step (3) is changed to 200 rad / s and the time is changed to 20 min.

[0070] Example 8

[0071] A method for preparing a one-component cleaning agent composition:

[0072] The only difference between this embodiment and embodiment 1 is that steps (1) to (3) are not performed. Instead, all components are mixed together and stirred at a speed of 300 rad / s for 30 minutes to directly obtain a single-component cleaning composition.

[0073] Comparative Examples 1 to 7

[0074] The only difference between Comparative Examples 1 to 7 and Example 1 is the raw material components and contents of the one-component cleaning composition, as shown in Table 1 for details.

[0075] Comparative Example 8

[0076] In this comparative example, a commercially available Safeft two-component silicon wafer cleaning agent was used as the obtained cleaning agent composition sample.

[0077] Comparative Example 9

[0078] In this comparative example, only pure water was used as the obtained cleaning composition sample.

[0079] Comparative Example 10

[0080] The only difference between this comparative example and Example 1 is that the alkali-soluble wetting agent is replaced by an equal weight portion of a block polyether L64 wetting agent, which has a solubility of 0.12 g / L in a liquid environment with a pH of 12 and a temperature of 25° C.

[0081] In this comparative example, since a non-alkali-soluble wetting agent is used, during the preparation and application of the cleaning agent, the poorly alkali-soluble dispersant will cause the components to be unable to be completely mixed and separated, thus preventing normal use.

[0082] Table 1

[0083]

[0084]

[0085] Cleaning capacity method

[0086] Cleaning procedure: For a single-component cleaning agent composition: add 50g of the cleaning agent composition sample to tank 1 of the cleaning machine, add 20g of pure water to tank 2, and then add 400L of pure water to each. For large chamfered silicon wafers with a specification of 182×182×0.134mm, soak in ultrasound for 180s at 70°C. Add an additional 30% of the cleaning agent composition (i.e., 15g of the cleaning agent composition) every 4 hours, and continue the experiment for 24 hours. For a two-component cleaning agent composition (i.e., comparative example 8): add 30g of agent A to tank 1 of the cleaning machine, add 20g of agent B to tank 2, and then add 400L of pure water to each. For large chamfered silicon wafers with a specification of 182×182×0.134mm, soak in ultrasound for 180s at 70°C. Add an additional 30% of the cleaning agent composition (i.e., 15g of the cleaning agent composition) every 4 hours, and continue the experiment for 24 hours.

[0087] Cleaning Performance: After each wafer was cleaned using the above cleaning procedure, it was then subjected to pure water overflow and vacuum drying, maintaining consistent process conditions. The wafers were then sorted by a sorter. Sorting data was collected at 0 hours, 8 hours, 16 hours, and 24 hours: surface contamination rate, oxidation rate, and edge contamination rate. Lower values for these three parameters indicate better cleaning performance. Using Comparative Example 8 as a reference, the cleaning performance data for each example and comparative example are shown in Tables 2-1 to 2-4.

[0088] Table 2-1

[0089]

[0090]

[0091] Table 2-2

[0092]

[0093] Table 2-3

[0094]

[0095]

[0096] Table 2-4

[0097]

[0098]

[0099] From the above description, it can be seen that compared to Comparative Examples 1 to 7, the present invention, by limiting the formula to "0.5-10 parts inorganic base, 0.5-8 parts alkali-soluble wetting agent, 0.1-1 part polymer dispersant, 1-5 parts oxidizing agent, 1-6 parts pH buffer, and 80-100 parts water," and specifically obtaining the above-mentioned examples, achieves the preparation of a single-component cleaning agent composition with particularly superior cleaning performance. Among them, Examples 1, 3, and 5 achieve the best sorting data, especially Example 1, whose sorting data after 24 hours is still higher than that of commercially available two-component silicon wafer cleaning agents at 0 hours, demonstrating excellent cleaning performance.

[0100] Specifically, by comparing Examples 1, 3, and 5 with Examples 2 and 4, it can be seen that when the amounts of the components in the detergent composition are further preferably "3 to 6 parts of sodium hydroxide, 1 to 2 parts of an alkali-soluble wetting agent, 0.1 to 0.5 parts of a polymer dispersant, 1 to 2 parts of an oxidizing agent, 2 to 4 parts of a pH buffer, and 86.5 to 93.0 parts of water", the components in the formula can be better coordinated with each other, and the resulting single-component detergent composition thus has better cleaning ability and higher cleaning efficiency. In particular, when the one-component cleaning composition includes, by weight, 3 parts of sodium hydroxide, 1 part of hexyl D-glucoside, 0.2 parts of polyacrylic acid dispersant Suractent 180S, 1 part of hydrogen peroxide, 3 parts of sodium glycinate, and 91.8 parts of water; or, 4 parts of sodium hydroxide, 1 part of D-pyranose, 0.5 parts of cellulose dispersant CMC, 1.5 parts of sodium thiosulfate, 2 parts of sodium acetate, and 91 parts of water; or, 3 parts of sodium hydroxide, 1 part of hexyl D-glucoside, 0.1 parts of polyacrylic acid dispersant Suractent 180S, 1 part of hydrogen peroxide, 2 parts of sodium glycinate, and 92.9 parts of water, that is, in the cleaning composition formulas provided in Examples 1, 3, and 5, the compatibility between the alkali-soluble wetting agent, the polymer dispersant, the oxidant, and the pH buffer is better, thereby exhibiting a more superior cleaning effect, especially during a long cleaning process, the cleaning effect is particularly stable and efficient.

[0101] By comparing Example 1 with Example 6, it can be seen that by preferably setting the first stirring speed of the cleaning composition to 300 rad / s to 400 rad / s and the time to 20 min to 30 min, and the second stirring speed to 300 rad / s to 400 rad / s and the time to 20 min to 30 min during the preparation process of the cleaning composition, the components in the composition can be promoted to form a more stable homogeneous system, thereby enabling the obtained cleaning composition to have a better long-term cleaning effect.

[0102] By comparing Example 1 with Example 7, it can be seen that by preferably setting the third stirring speed of the cleaning composition to 100 rad / s to 150 rad / s and the stirring time to 40 min to 50 min during the preparation process, the oxidant can be more evenly dispersed in the solution, forming a stable synergistic system with the alkaline environment and ingredients such as the wetting agent and the dispersant, so that the resulting single-component cleaning composition has better cleaning performance.

[0103] Comparing Example 1 with Example 8 demonstrates that by adding the components stepwise and controlling the stirring conditions, the uniformity and chemical stability of the resulting cleaning composition can be improved. Specifically, the oxidizing agent, through the optimized preparation sequence and conditions of the present invention, achieves a more uniform dispersion, ultimately yielding a single-component cleaning composition with superior cleaning performance.

[0104] In particular, in Comparative Example 10, an equal amount by weight of a segmented polyether L64 wetting agent was used to replace the preferred alkali-soluble wetting agent of the present invention. Because the solubility of the segmented polyether L64 wetting agent is too low, at 0.12 g / L, in a liquid environment at a pH of 12 and a temperature of 25°C, this poorly alkali-soluble dispersant prevents the components from being fully mixed and separated during the preparation and application of the cleaning agent, preventing proper use.

[0105] It should be noted that the terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of the application described herein can, for example, be implemented in an order other than that described herein.

[0106] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A one-component cleaning composition, characterized in that: The one-component cleaning agent composition comprises, by weight, 0.5 to 10 parts of an inorganic base, 0.5 to 8 parts of an alkali-soluble wetting agent, 0.1 to 1 part of a polymer dispersant, 1 to 5 parts of an oxidizing agent, 1 to 6 parts of a pH buffer, and 80 to 100 parts of water; In a liquid environment with a pH of 10 to 12 and a temperature of 25±2° C., the solubility of the alkali-soluble wetting agent is 400 g / L to 1000 g / L.

2. The one-component cleaning composition according to claim 1, characterized in that The molecular structure of the alkali-soluble wetting agent contains polyethylene glycol segments and / or glycoside groups; Preferably, the alkali-soluble wetting agent is selected from one or more of hexyl D-glycoside, α-2-ethylhexyl-ω-hydroxypolyethylene glycol, isooctyl polyoxyethylene ether phosphate AEP and D-pyranose.

3. The one-component cleaning composition according to claim 1 or 2, characterized in that In a liquid environment with a pH of 10 to 12 and a temperature of 25±2° C., the solubility of the polymer dispersant is 100 g / L to 450 g / L; Preferably, the polymer dispersant is selected from one or more of polyacrylic acid dispersants, modified polyurethane dispersants and cellulose dispersants, and the molecular weight of the polymer dispersant is 10,000 to 200,000.

4. The one-component cleaning composition according to any one of claims 1 to 3, characterized in that The oxidant is selected from one of hydrogen peroxide, sodium hypochlorite, sodium thiosulfate and hydroxylamine hydrochloride.

5. The one-component cleaning composition according to any one of claims 1 to 4, characterized in that The pH buffer is selected from one or more of sodium glycine, sodium citrate and sodium acetate.

6. The one-component cleaning composition according to any one of claims 1 to 5, characterized in that The inorganic base is sodium hydroxide and / or potassium hydroxide.

7. The one-component cleaning composition according to any one of claims 1 to 6, characterized in that In parts by weight, the one-component cleaning composition includes 3 to 9 parts of the inorganic base, 1 to 3 parts of the alkali-soluble wetting agent, 0.1 to 0.8 parts of the polymer dispersant, 1 to 3 parts of the oxidant, 2 to 5 parts of the pH buffer and 85 to 95 parts of the water.

8. The one-component cleaning composition according to claim 7, characterized in that In parts by weight, the one-component cleaning agent composition includes 3 to 6 parts of sodium hydroxide, 1 to 2 parts of the alkali-soluble wetting agent, 0.1 to 0.5 parts of the polymer dispersant, 1 to 2 parts of the oxidant, 2 to 4 parts of the pH buffer and 86.5 to 93.0 parts of the water.

9. A method for preparing the one-component cleaning composition according to any one of claims 1 to 8, characterized in that: include: Step S1, adding the inorganic base to a portion of the water, and performing a first stirring to obtain a first mixed solution; Step S2, sequentially adding the polymer dispersant, the pH buffer, and the alkali-soluble wetting agent to the first mixed solution, and performing a second stirring to obtain a second mixed solution; Step S3, adding another portion of the water and the oxidant to the second mixed liquid in sequence, and performing a third stirring to obtain the one-component cleaning agent composition.

10. Use of the one-component cleaning agent composition according to any one of claims 1 to 8 as a silicon wafer cleaning agent in the field of semiconductor manufacturing.

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