A dual-band coupler and dual-band radio frequency front-end device

Abstract

The application discloses a kind of dual-band coupler and dual-band radio frequency front-end device, belong to mobile communication field, for realizing high flexibility dual-band matching;The dual-band coupler includes first signal line and second signal line, and the improvement design of signal line structure is introduced by T-shaped structure wire pair.The dual-band radio frequency front-end device includes dual-band power amplifier, dual-band low noise amplifier, dual-band radio frequency switch;The dual-band power amplifier includes radio frequency power amplifier and dual-band coupler;The dual-band low noise amplifier includes radio frequency low noise amplifier and dual-band coupler, and the radio frequency power amplifier and radio frequency low noise amplifier use the dual-band coupler to realize dual-band.It can reduce the number of element use, reduce chip area, to reduce cost.The application lays a deep foundation for realizing high performance, ultra-wideband, simple structure dual-band radio frequency front-end device large-scale commercial application.

Description

Technical Field

[0001] The present application relates to the field of millimeter wave technology, and in particular to a dual-band coupler and a dual-band radio frequency front-end device. Background Art

[0002] Currently, fifth-generation (5G) millimeter-wave (mmWave) solutions have two frequency bands: the 28GHz band (24GHz-30GHz) (commonly referred to and herein as the low band) and the 39GHz band (37GHz-41GHz) (commonly referred to and herein as the high band). Therefore, a typical 5G RF front-end uses two transmit (TX) chains and two receive (RX) chains to operate in these two bands, with one TX chain and one RX chain for each band. However, two TX and RX chains double the number of components and double the chip area, hindering area and cost reduction.

[0003] If both frequency bands can be covered by a single frequency band instead of two, this can significantly reduce chip area and thus reduce costs. Providing coverage for a single 24 GHz to 41 GHz frequency band could be a broadband solution covering both the 28 GHz and 39 GHz frequency bands. However, much of the 24 GHz to 41 GHz frequency band is not used for 5G solutions, and ultra-wideband typically reduces other performance metrics, so this broadband solution has significant limitations. Summary of the Invention

[0004] In view of this, the purpose of the embodiments of this application is to provide a dual-band coupler and dual-band RF front-end device to address the technical issues of poor dual-band impedance matching, small impedance transformation ratio, and inflexible impedance matching in related technologies. By optimizing the dual-band coupler structure to enable independent control of the inductance and coupling coefficient of the two main signal lines, the matching effect and matching freedom are significantly improved.

[0005] According to a first aspect of an embodiment of the present application, there is provided a dual-band coupler, comprising:

[0006] a first signal line, the first signal line being divided into a first left half conductor, a pair of middle conductors, and a first right half conductor, the pair of middle conductors respectively having a first input terminal and a second input terminal; a first T-shaped conductor being connected to the first left half conductor, the first end and the second end of the first T-shaped conductor being respectively connected to the upper and lower ends of the first left half conductor, and the third end of the first T-shaped conductor serving as a third input terminal; a second T-shaped conductor being connected to the first right half conductor, the first end and the second end of the second T-shaped conductor being respectively connected to the upper and lower ends of the first right half conductor, and the third end of the second T-shaped conductor serving as a fourth input terminal;

[0007] A second signal line, the second signal line is divided into a second left half wire and a second right half wire, one end of the second left half wire is a first output end, and the other end is a third output end; one end of the second right half wire is a second output end, and the other end is a fourth output end; the second left half wire is connected to a third T-shaped wire, the first end and the second end of the third T-shaped wire are respectively connected to the upper and lower ends of the second left half wire; the second right half wire is connected to a fourth T-shaped wire, the first end and the second end of the fourth T-shaped wire are respectively connected to the upper and lower ends of the second right half wire; the third end of the third T-shaped wire is connected to the third end of the fourth T-shaped wire.

[0008] Optionally, a first current loop formed by the first input terminal and the second input terminal is strongly coupled with a second current loop formed by the first output terminal and the third output terminal, and the first current loop is strongly coupled with a third current loop formed by the second output terminal and the fourth output terminal, and the three current loops form a coupler of one frequency band;

[0009] The fourth current loop composed of the third input terminal and the fourth input terminal is strongly coupled with the fifth current loop composed of the first output terminal and the second output terminal, and the fourth current loop is strongly coupled with the sixth current loop composed of the third output terminal and the fourth output terminal. The three current loops form a coupler of one frequency band.

[0010] Optionally, when a differential signal is input to the first input terminal and the second input terminal, the first output terminal and the third output terminal output a frequency band differential signal, and the second output terminal and the fourth output terminal output a frequency band differential signal; the third input terminal and the fourth input terminal remain in a floating state;

[0011] When the third input terminal and the fourth input terminal input a differential signal, the first output terminal and the second output terminal output another frequency band differential signal, and the third output terminal and the fourth output terminal output another frequency band differential signal; the first input terminal and the second input terminal remain suspended.

[0012] Optionally, the first signal line is a conductive line formed on a first dielectric layer, and the second signal line is a conductive line formed on a second dielectric layer.

[0013] Optionally, the first signal line and the second signal line are made of a conductive medium.

[0014] Optionally, the second dielectric layer is stacked on the first dielectric layer, or the first dielectric layer is stacked on the second dielectric layer.

[0015] According to a second aspect of an embodiment of the present application, a dual-band RF front-end device is provided, including: an RF power amplifier, an RF low-noise amplifier, an RF switch, and the dual-band coupler described in the first aspect, wherein the RF power amplifier and the RF low-noise amplifier are connected to the RF switch respectively through the dual-band coupler to achieve dual-band. The RF switch includes a two-way switch to control two frequency bands respectively, and the RF power amplifier and the RF low-noise amplifier are connected to the RF switch respectively.

[0016] According to a third aspect of an embodiment of the present application, a dual-band power amplifier is provided, comprising a radio frequency power amplifier and the dual-band coupler described in the first aspect, wherein the radio frequency power amplifier uses the dual-band coupler to achieve dual bands.

[0017] According to a fourth aspect of an embodiment of the present application, a dual-band low noise amplifier is provided, comprising a radio frequency low noise amplifier and the dual-band coupler described in the first aspect, wherein the radio frequency low noise amplifier uses the dual-band coupler to achieve dual bands.

[0018] According to a fifth aspect of an embodiment of the present application, a dual-band RF front-end device is provided, including: a dual-band power amplifier, a dual-band low-noise amplifier, and a dual-band RF switch; the dual-band power amplifier includes an RF power amplifier and the dual-band coupler described in the first aspect, and the RF power amplifier uses the dual-band coupler to achieve dual-band; the dual-band low-noise amplifier includes an RF low-noise amplifier and the dual-band coupler described in the first aspect, and the RF low-noise amplifier uses the dual-band coupler to achieve dual-band; the dual-band RF switch includes a two-way switch to control two frequency bands respectively, and the dual-band power amplifier and the dual-band low-noise amplifier are respectively connected to the dual-band RF switch.

[0019] According to a sixth aspect of an embodiment of the present application, a dual-band wireless communication system is provided, comprising: a transceiver, a band one antenna, a band two antenna, and the dual-band RF front-end device described in the fifth aspect, wherein the transceiver processes a baseband signal and converts it to an operating frequency, and is connected to the dual-band RF front-end device; the band one antenna receives a band one signal sent by the dual-band RF front-end device and transmits it to the external space through electromagnetic waves, or receives a band one electromagnetic wave from the external space and transmits it to the dual-band RF front-end device, and is connected to a dual-band RF switch in the dual-band RF front-end device; the band two antenna receives a band two signal sent by the dual-band RF front-end device and transmits it to the external space through electromagnetic waves, or receives a band two electromagnetic wave from the external space and transmits it to the dual-band RF front-end device, and is connected to the dual-band RF switch in the dual-band RF front-end device.

[0020] The technical solutions provided by the embodiments of the present application may have the following beneficial effects:

[0021] (1) Reduce the number of components used. The dual-band coupler integrates two frequency-band coupling lines, allowing the impedance of the same transistor to be well matched in different frequency bands, avoiding the need to use two sets of single-band chips for dual-band requirements. Therefore, the dual-band coupler halves the number of matching networks and transistors, greatly reducing chip area and thus significantly reducing chip manufacturing costs.

[0022] (2) High impedance matching flexibility. The dual-band coupler proposes a T-shaped conductor. By adjusting the left and right positions of the T-shaped conductor, the primary coil inductance, secondary coil inductance, and mutual inductance of the coupling loop can be changed over a wide range, thereby providing a wider range of impedance conversion ratios. Therefore, the dual-band coupler can be applied to input impedance matching, inter-stage impedance matching, and output impedance matching, greatly improving the flexibility of impedance matching.

[0023] (3) Improve the performance of the dual-band coupler. By adjusting the material thickness of the outer contour line and the T-shaped conductor, the line width, and the overlapping area of ​​the first and second signal lines, the dual-band coupler can achieve lower insertion loss and higher return loss in each frequency band of the dual-band. Therefore, the use of high-performance dual-band couplers can greatly reduce the performance loss caused by the passive components of the RF power amplifier and RF low-noise amplifier, and greatly improve the performance of the dual-band RF front-end device.

[0024] (4) The dual-band RF front-end device for wireless communications provided by the present invention uses a dual-band coupler as the matching network for the RF power amplifier and the RF low-noise amplifier. The dual-band coupler enables the RF power amplifier and the RF low-noise amplifier to achieve impedance matching in dual frequency bands simultaneously, avoiding the performance degradation caused by the broadband coupler. In addition, the dual-band RF front-end device reduces the number of components used and the chip area, and has great potential for application in the 5G millimeter wave band.

[0025] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0027] Figure 1 FIG. 1 is a schematic diagram of a dual-band coupler according to an exemplary embodiment of the present invention.

[0028] Figure 2 A schematic diagram of the input impedance of a 5G millimeter-wave RF power amplifier transistor at different frequencies is shown in an exemplary embodiment of the present invention.

[0029] Figure 3 FIG. 1 is a schematic diagram of the layout of a dual-band coupler in an actual chip according to an exemplary embodiment of the present invention.

[0030] Figure 4 Schematic diagram of insertion loss and return loss of a dual-band coupler at 5G 28G band and 39G band according to an exemplary embodiment of the present invention.

[0031] Figure 5 FIG. 1 is a schematic diagram showing the signal flow direction of frequency band 1 of a dual-band coupler according to an exemplary embodiment of the present invention.

[0032] Figure 6 FIG. 1 is a schematic diagram showing the signal flow direction of frequency band 2 of a dual-band coupler according to an exemplary embodiment of the present invention.

[0033] Figure 7 This is a schematic diagram of impedance matching in frequency band 1 of a dual-band coupler according to an exemplary embodiment of the present invention.

[0034] Figure 8 This is a schematic diagram of impedance matching principle of a dual-band coupler in frequency band two according to an exemplary embodiment of the present invention.

[0035] Figure 9 FIG. 1 is a structural block diagram of a dual-band wireless communication system according to an exemplary embodiment of the present invention.

[0036] 1. First signal line; 11. First left half conductor; 12. Middle half conductor; 13. First right half conductor; 14. First input terminal; 15. Second input terminal; 16. First T-shaped conductor; 17. Third input terminal; 18. Second T-shaped conductor; 19. Fourth input terminal;

[0037] 2. Second signal line; 21. Second left half conductor; 22. Second right half conductor; 23. First output terminal; 24. Second output terminal; 25. Third output terminal; 26. Fourth output terminal; 27. Third T-shaped conductor; 28. Fourth T-shaped conductor;

[0038] 31. Transceiver; 32. Band 1 antenna; 33. Band 2 antenna; 34. Dual-band RF front-end device; 341. Dual-band power amplifier; 342. Dual-band low-noise amplifier; 343. Dual-band RF switch. DETAILED DESCRIPTION

[0039] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0040] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. As used in this application and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0041] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0042] Example 1:

[0043] refer to Figure 1The present invention relates to a dual-band coupler, comprising a first signal line 1 and a second signal line 2. The first signal line 1 is divided into a first left half conductor 11, a pair of middle conductors 12, and a first right half conductor 13. The pair of middle conductors 12 respectively have a first input terminal 14 and a second input terminal 15. The first left half conductor 11 is connected to a first T-shaped conductor 16, the first end and the second end of the first T-shaped conductor 16 are respectively connected to the upper and lower ends of the first left half conductor 11, and the third end of the first T-shaped conductor 16 serves as a third input terminal 17. The first right half conductor 13 is connected to a second T-shaped conductor 18, the first end and the second end of the second T-shaped conductor 18 are respectively connected to the upper and lower ends of the first right half conductor 13, and the third end of the second T-shaped conductor 18 serves as a third input terminal 17. is the fourth input terminal 19; the second signal line 2 is divided into a second left half wire 21 and a second right half wire 22, one end of the second left half wire 21 is the first output terminal 23, and the other end is the third output terminal 25; one end of the second right half wire 22 is the second output terminal 24, and the other end is the fourth output terminal 26; the second left half wire 21 is connected to a third T-shaped wire 27, and the first end and the second end of the third T-shaped wire 27 are respectively connected to the upper and lower ends of the second left half wire 21; the second right half wire 22 is connected to a fourth T-shaped wire 28, and the first end and the second end of the fourth T-shaped wire 28 are respectively connected to the upper and lower ends of the second right half wire 22; the third end of the third T-shaped wire 27 is connected to the third end of the fourth T-shaped wire 28.

[0044] As can be seen from the above embodiments, the present application can achieve good impedance matching and impedance conversion ratio in dual bands. The dual-band coupler includes a first signal line and a second signal line, and the coupling lines of different frequency bands are switched by adjusting the input and output ends of different frequency bands. In particular, the dual-band coupler can also adjust the position of the T-shaped wire and the width of the signal line to improve the primary coil inductance range, secondary coil inductance range and mutual inductance range of the coupling line, thereby improving the dual-band impedance matching effect, increasing the impedance variation range, and impedance matching flexibility.

[0045] In one embodiment, the first current loop composed of the first input terminal 14 and the second input terminal 15 is strongly coupled to the second current loop composed of the first output terminal 23 and the third output terminal 25, and the first current loop is strongly coupled to the third current loop composed of the second output terminal 24 and the fourth output terminal 26, and the three current loops form a coupler for one frequency band. The fourth current loop composed of the third input terminal 17 and the fourth input terminal 19 is strongly coupled to the fifth current loop composed of the first output terminal 23 and the second output terminal 24, and the fourth current loop is strongly coupled to the sixth current loop composed of the third output terminal 25 and the fourth output terminal 26, and the three current loops form a coupler for one frequency band. Each current loop composed of two input terminals is mutually coupled with two current loops composed of two output terminals. The current loop composed of two output terminals can output two differential signals, and the two differential signals can be input into two transistor differential pairs. Therefore, the dual-band coupler described in claim 1 can simultaneously input signals into two transistor differential pairs, which greatly improves the output power of the dual-band RF power amplifier and the dual-band low-noise amplifier.

[0046] In one embodiment, the present embodiment relates to the signal flow direction in the signal layer of the dual-band coupler working in the high-frequency band. Figure 5 For example, when a differential signal is input to the first input terminal 14 and the second input terminal 15, the first output terminal 23 and the third output terminal 25 each output a differential signal of a frequency band, and the second output terminal 24 and the fourth output terminal 26 each output a differential signal of a frequency band. The third input terminal 17 and the fourth input terminal 19 remain floating. The purpose of leaving the third input terminal 17 and the fourth input terminal 19 floating is to generate an AC ground at the third input terminal 17 and the fourth input terminal 19 in the middle of the coupling line when the differential signal flows from the first input terminal 14 to the second input terminal 15. If the third input terminal 17 and the fourth input terminal 19 are not floating, the normal coupling line is disturbed, greatly damaging the impedance matching effect.

[0047] This embodiment also involves a circuit schematic diagram of a dual-band coupler in a high frequency band, such as Figure 7 As shown. When a differential signal is input to first input terminal 14 and second input terminal 15, inductor L1 couples to L2, and inductor L3 couples to L4. Therefore, first output terminal 23 and third output terminal 25 output differential signals, and second output terminal 24 and fourth output terminal 26 output differential signals. Because third input terminal 17 and fourth input terminal 19 are left floating when a differential signal is input to first input terminal 14 and second input terminal 15, the coupling paths of inductors L5, L6, L7, and L8 are inoperative.

[0048] This embodiment involves the signal flow direction of the dual-band coupler working in the signal layer of the low frequency band. Figure 6For example, when a differential signal is input to the third input terminal 17 and the fourth input terminal 19, the first output terminal 23 and the second output terminal 24 each output a differential signal in a different frequency band, and the third output terminal 25 and the fourth output terminal 26 each output a differential signal in another frequency band. The first input terminal 14 and the second input terminal 15 remain floating. The purpose of leaving the first input terminal 14 and the second input terminal 15 floating is to generate an AC ground at the middle of the coupling line between the first input terminal 14 and the second input terminal 15 when the differential signal flows from the third input terminal 17 to the fourth input terminal 19. If the first input terminal 14 and the second input terminal 15 are not floating, the normal coupling line is disturbed, greatly damaging the impedance matching effect.

[0049] This embodiment also involves a circuit schematic diagram of a dual-band coupler in a low frequency band, such as Figure 8 As shown. When a differential signal is input to the third input terminal 17 and the fourth input terminal 19, inductors L5 and L7 couple, and L6 and L8 couple. Therefore, the first output terminal 23 and the second output terminal 24 output a differential signal, and the third output terminal 25 and the fourth output terminal 26 output a differential signal. Because the first input terminal 14 and the second input terminal 15 are left floating when a differential signal is input to the third input terminal 17 and the fourth input terminal 19, the coupling paths of inductors L1, L2, L3, and L4 are inoperative.

[0050] In one embodiment, the width and length of the left and right half conductors may be different; and the positions and widths of the first and second T-shaped conductors 16 and 18 , and the third and fourth T-shaped conductors 27 and 28 may be different.

[0051] In one embodiment, the first signal line 1 is a conductive line formed on a first dielectric layer, and the second signal line 2 is a conductive line formed on a second dielectric layer. This is because interconnect metal in a chip is typically deposited on a dielectric layer, and metal cannot be deposited directly on metal, as this would cause chip reliability issues.

[0052] In one embodiment, the material of the first signal line 1 and the second signal line 2 is a conductive medium, and the material, thickness and width of the first signal line 1 and the second signal line 2 can be different.

[0053] In one embodiment, the second dielectric layer is stacked on the first dielectric layer, or the first dielectric layer is stacked on the second dielectric layer. Due to the stacking, when an AC signal flows through the first signal line or the second signal line, the first signal line and the second signal line are coupled, thereby realizing a dual-band coupler.

[0054] Example 2:

[0055] This embodiment involves a dual-band coupler. Figure 1For example, a dual-band coupler can switch between the 5G 28G band and the 39G band by switching different input and output ports. In one embodiment, the band switching network disclosed in the present application provides a dual-band network that is highly flexible and can design circuits for each of the two bands independently of each other. For example, by adjusting the position, thickness, width, and signal line overlap area of ​​the T-shaped conductor, a wide range of coupling coefficients, impedance transformation ratios, and parasitic parameter changes can be provided, thereby greatly improving the flexibility of impedance matching.

[0056] Example 3:

[0057] This embodiment involves a graph of the input impedance Zin of the RF power amplifier transistor at different frequencies at 5G millimeter wave frequencies, such as Figure 2 More specifically, Figure 2 This graph shows the real and imaginary components of the input impedance Zin of a transistor acting as an RF power amplifier as a function of frequency. The input impedance Zin is matched to a 50-ohm source. For the 28 GHz and 39 GHz bands, the real and imaginary components of the impedance looking toward the transistor gate fluctuate significantly. This also means that when using a dual-band coupler, different coupling circuits should be used to achieve different impedance transformation ratios.

[0058] Example 4:

[0059] This embodiment involves the layout of the dual-band coupler of the present invention in an actual chip, such as Figure 3 As shown in the figure, the dual-band coupler serves as the input matching network, matching 50 ohms to the input impedance Zin of the RF power amplifier transistor. Since the RF power amplifier input typically uses a GSG RF probe, the RF signal input uses three terminals: ground, signal, and ground. Similarly, this embodiment can also be expanded to use dual-band couplers as interstage matching networks and output matching networks.

[0060] Example 5:

[0061] This embodiment involves the insertion loss and return loss of the dual-band coupler of the present invention at the 5G 28G band and the 39G band, as shown in FIG. Figure 4 A and Figure 4 As shown in B. Figure 4 At 26.3GHz in A, the insertion loss is -1.4dB and the return loss is -13.6dB. Figure 4 At 38.9 GHz in channel B, the insertion loss is -1.43 dB and the return loss is -12.6 dB. The dual-band coupler exhibits low insertion loss and high return loss in both the 28 GHz and 39 GHz bands, indicating good matching performance in both bands.

[0062] Example 6:

[0063] refer to Figure 9 Based on the aforementioned dual-band coupler, an embodiment of the present invention provides a dual-band power amplifier 341, comprising a radio frequency power amplifier and the aforementioned dual-band coupler. The radio frequency power amplifier utilizes the dual-band coupler to achieve dual-band operation. An embodiment of the present invention provides a dual-band low-noise amplifier 342, comprising a radio frequency low-noise amplifier and the aforementioned dual-band coupler. The radio frequency low-noise amplifier utilizes the dual-band coupler to achieve dual-band operation.

[0064] refer to Figure 9 The present invention also provides a dual-band RF front-end device 34, which addresses the large chip area issues of conventional broadband RF front-ends. The dual-band RF front-end device includes a dual-band RF power amplifier, a dual-band RF low-noise amplifier, and an RF switch. In response to multi-band demands, the present invention lays a solid foundation for the large-scale commercial application of high-performance, ultra-wideband, and simple-structured dual-band RF front-end devices. The dual-band RF front-end device 34 includes: a dual-band power amplifier 341, a dual-band low-noise amplifier 342, and a dual-band RF switch 343; the dual-band power amplifier 341 includes an RF power amplifier and the above-mentioned dual-band coupler, and the RF power amplifier uses the dual-band coupler to achieve dual-band; the dual-band low-noise amplifier 342 includes an RF low-noise amplifier and the above-mentioned dual-band coupler, and the RF low-noise amplifier uses the dual-band coupler to achieve dual-band; the dual-band RF switch 343 includes a two-way switch to control two frequency bands respectively, and the dual-band power amplifier 341 and the dual-band low-noise amplifier 342 are respectively connected to the dual-band RF switch 343.

[0065] refer to Figure 9 An embodiment of the present invention further provides a dual-band wireless communication system, comprising: a transceiver 31, a band one antenna 32, a band two antenna 33, and the aforementioned dual-band RF front-end device 34. The transceiver 31 processes baseband signals and converts them to an operating frequency, and is connected to the dual-band RF front-end device 34. The band one antenna 32 receives a band one signal sent by the dual-band RF front-end device 34 and transmits it to the external space via electromagnetic waves, or receives a band one electromagnetic wave from the external space and transmits it to the dual-band RF front-end device 34, and is connected to a dual-band RF switch 343 in the dual-band RF front-end device 34. The band two antenna 33 receives a band two signal sent by the dual-band RF front-end device 34 and transmits it to the external space via electromagnetic waves, or receives a band two electromagnetic wave from the external space and transmits it to the dual-band RF front-end device, and is connected to the dual-band RF switch 343 in the dual-band RF front-end device 34.

[0066] The dual-band RF front-end device for wireless communications provided by the present invention utilizes a dual-band coupler as the matching network for the RF power amplifier and the RF low-noise amplifier. The dual-band coupler enables the RF power amplifier and the RF low-noise amplifier to achieve impedance matching in both frequency bands simultaneously, avoiding the performance degradation associated with a broadband coupler. Furthermore, the dual-band RF front-end device reduces the number of components used and the chip area, demonstrating its significant potential for application in the 5G millimeter-wave band.

[0067] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the contents disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of the present application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered merely as exemplary, and the true scope and spirit of the present application are indicated by the claims.

[0068] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A dual-band coupler, characterized in that: include: a first signal line, the first signal line being divided into a first left half conductor, a pair of middle conductors, and a first right half conductor, the pair of middle conductors respectively having a first input terminal and a second input terminal; a first T-shaped conductor being connected to the first left half conductor, the first end and the second end of the first T-shaped conductor being respectively connected to the upper and lower ends of the first left half conductor, and the third end of the first T-shaped conductor serving as a third input terminal; a second T-shaped conductor being connected to the first right half conductor, the first end and the second end of the second T-shaped conductor being respectively connected to the upper and lower ends of the first right half conductor, and the third end of the second T-shaped conductor serving as a fourth input terminal; a second signal line, the second signal line being divided into a second left half conductor and a second right half conductor, wherein one end of the second left half conductor is a first output end and the other end is a third output end; one end of the second right half conductor is a second output end and the other end is a fourth output end; a third T-shaped conductor is connected to the second left half conductor, wherein a first end and a second end of the third T-shaped conductor are respectively connected to an upper and a lower end of the second left half conductor; a fourth T-shaped conductor is connected to the second right half conductor, wherein a first end and a second end of the fourth T-shaped conductor are respectively connected to an upper and a lower end of the second right half conductor; and a third end of the third T-shaped conductor is connected to a third end of the fourth T-shaped conductor; The first signal line is a conductive line formed on a first dielectric layer, and the second signal line is a conductive line formed on a second dielectric layer; The second dielectric layer is stacked on the first dielectric layer, or the first dielectric layer is stacked on the second dielectric layer.

2. The dual-band coupler according to claim 1, wherein: A first current loop formed by the first input terminal and the second input terminal is strongly coupled to a second current loop formed by the first output terminal and the third output terminal. The first current loop is strongly coupled to a third current loop formed by the second output terminal and the fourth output terminal. The three current loops form a coupler of one frequency band. The fourth current loop composed of the third input terminal and the fourth input terminal is strongly coupled with the fifth current loop composed of the first output terminal and the second output terminal, and the fourth current loop is strongly coupled with the sixth current loop composed of the third output terminal and the fourth output terminal. The three current loops form a coupler of another frequency band.

3. The dual-band coupler according to claim 1, wherein: When the first input terminal and the second input terminal input a differential signal, the first output terminal and the third output terminal output a frequency band differential signal, and the second output terminal and the fourth output terminal output a frequency band differential signal; The third input terminal and the fourth input terminal are kept in a suspended state; When the third input terminal and the fourth input terminal input a differential signal, the first output terminal and the second output terminal output another frequency band differential signal, and the third output terminal and the fourth output terminal output another frequency band differential signal; the first input terminal and the second input terminal remain suspended.

4. The dual-band coupler according to claim 1, wherein: The material of the first signal line and the second signal line is a conductive medium.

5. A dual-band power amplifier, characterized in that: The invention comprises a radio frequency power amplifier and the dual-band coupler according to any one of claims 1 to 4, wherein the radio frequency power amplifier uses the dual-band coupler to achieve dual bands.

6. A dual-band low-noise amplifier, characterized in that: The invention comprises a radio frequency low noise amplifier and the dual-band coupler according to any one of claims 1 to 4, wherein the radio frequency low noise amplifier uses the dual-band coupler to achieve dual bands.

7. A dual-band RF front-end device, characterized in that: include: Dual-band power amplifier, dual-band low-noise amplifier, dual-band RF switch; The dual-band power amplifier comprises a radio frequency power amplifier and the dual-band coupler according to any one of claims 1 to 4, wherein the radio frequency power amplifier uses the dual-band coupler to achieve dual bands; The dual-band low noise amplifier comprises a radio frequency low noise amplifier and the dual-band coupler according to any one of claims 1 to 4, wherein the radio frequency low noise amplifier uses the dual-band coupler to achieve dual bands; The dual-band radio frequency switch comprises a two-way switch for controlling two frequency bands respectively, and the dual-band power amplifier and the dual-band low noise amplifier are respectively connected to the dual-band radio frequency switch.

8. A dual-band wireless communication system, characterized in that: include: transceiver, a band one antenna, a band two antenna, and the dual-band RF front-end device according to claim 7, The transceiver processes the baseband signal and converts it to an operating frequency, and is connected to a dual-band RF front-end device; The band one antenna receives a band one signal sent by the dual-band RF front-end device and transmits it to the external space through electromagnetic waves, or receives a band one electromagnetic wave from the external space and transmits it to the dual-band RF front-end device, and is connected to a dual-band RF switch in the dual-band RF front-end device; The band 2 antenna receives the band 2 signal sent by the dual-band RF front-end device and transmits it to the external space through electromagnetic waves, or receives the band 2 electromagnetic wave in the external space and transmits it to the dual-band RF front-end device, and is connected to the dual-band RF switch in the dual-band RF front-end device.

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