A nitride semiconductor epitaxial structure for improving blue-green dual-wavelength light emission intensity and a growth method thereof

Abstract

The application discloses a nitride semiconductor epitaxial structure for improving blue-green dual-wavelength light-emitting intensity and a growth method thereof. The epitaxial structure comprises, in sequence, a buffer layer, an undoped GaN layer, an undoped GaN layer, an N-type GaN layer, a stress release layer, a stress release layer, a green light multi-quantum well structure, a V-type defect filling layer, a low-temperature open Pits layer, a defect blocking layer, a blue light multi-quantum well structure, an electron buffer layer, an electron blocking layer, a P-type GaN layer, an InGaN contact transition layer and a P-type contact layer. The green light multi-quantum well structure adopts a wide-well narrow-barrier design to relieve lattice strain and piezoelectric polarization effect. Three layers of defect regulation structures are arranged between the green light region and the blue light region, penetration dislocations are inhibited from extending to the blue light region through stress induction and dislocation conversion, and the crystal quality is improved. The growth method controls the epitaxy of each functional layer in different temperature zones and V / III ratio conditions in stages, and realizes the construction of a high-quality multi-quantum well integrated structure.

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