Perovskite solar cell and preparation method thereof, power utilization device and power generation device

Abstract

The invention provides a perovskite solar cell and a preparation method thereof, a power utilization device and a power generation device, and the preparation method of the perovskite solar cell comprises the steps: providing a substrate structure which is used for arranging a perovskite layer; a first prefabricated layer is formed on the substrate structure, and the first prefabricated layer comprises a self-assembly compound and a first perovskite precursor; a second perovskite precursor solution is arranged on the first prefabricated layer, heat treatment is carried out, the first prefabricated layer and the second perovskite precursor solution form a perovskite layer, and the second perovskite precursor solution comprises a passivating agent and a second perovskite precursor; wherein the self-assembly compound is located on the lower interface of the perovskite layer, and the passivator is located on the upper interface of the perovskite layer. According to the perovskite solar cell, the self-assembly compound and the passivator are added in the perovskite layer step by step, the passivation effect on the upper interface and the lower interface of the perovskite is achieved at the same time, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of perovskite solar cells, and in particular to a perovskite solar cell and a preparation method thereof, an electrical device, and a power generation device. Background Art

[0002] Perovskite solar cells have a promising future due to their high theoretical photoelectric conversion efficiency. However, in related technologies, the actual photoelectric conversion efficiency of perovskite solar cells is not ideal. Therefore, how to improve the photoelectric conversion efficiency of perovskite solar cells is a technical problem that needs to be solved urgently. Summary of the Invention

[0003] In view of the above technical problems, the present application provides a perovskite solar cell and a preparation method thereof, an electrical device and a power generation device to improve the photoelectric conversion efficiency of the perovskite solar cell.

[0004] The first technical solution adopted in the present application is: to provide a method for preparing a perovskite solar cell, the method comprising: providing a substrate structure, the substrate structure being used to set a perovskite layer; forming a first prefabricated layer on the substrate structure, wherein the first prefabricated layer comprises a self-assembled compound and a first perovskite precursor; setting a second perovskite precursor liquid on the first prefabricated layer, and heat-treating the first prefabricated layer and the second perovskite precursor liquid to form a perovskite layer, wherein the second perovskite precursor liquid comprises a passivator and a second perovskite precursor; wherein the self-assembled compound is located at the lower interface of the perovskite layer, and the passivator is located at the upper interface of the perovskite layer; wherein the lower interface is the interface of the perovskite layer toward the substrate structure, and the upper interface is the interface of the perovskite layer away from the substrate structure.

[0005] In the technical solution of the embodiment of the present application, the perovskite layer is prepared by a two-step method: a first prefabricated layer is arranged on the substrate structure, and a self-assembled compound is added to the first prefabricated layer. The self-assembled compound has a strong interaction with the lower interface of the first prefabricated layer, and the self-assembled compound is spontaneously arranged in a directional manner and enriched at the lower interface of the first prefabricated layer to form a lower passivation structure, thereby reducing the defects of the lower interface of the subsequently formed perovskite layer; then a second perovskite precursor liquid is arranged on the first prefabricated layer. After heat treatment, the first prefabricated layer and the second perovskite precursor liquid form a perovskite layer, and the passivator in the second perovskite precursor liquid is enriched toward the upper interface to form a passivation structure at the upper interface of the perovskite layer, thereby reducing the defects of the upper interface of the perovskite layer. Therefore, the preparation method of the perovskite solar cell provided by the present application can simultaneously reduce the defects of the lower interface and the upper interface of the perovskite layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0006] In addition, in addition to the self-assembled compounds enriched at the lower interface of the perovskite layer and the passivators at the upper interface, the self-assembled compounds and passivators retained inside the perovskite layer can also passivate the defects inside the perovskite layer, further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0007] In some embodiments, the mass ratio of the self-assembly compound to the first perovskite precursor is (0.5-4):(200-500).

[0008] In the technical solution of the embodiment of the present application, the self-assembled compound taken from the above range can passivate the lower interface of the first prefabricated layer, reduce the defects of the lower interface of the subsequently formed perovskite layer, and improve the photoelectric conversion efficiency of the perovskite solar cell.

[0009] In some embodiments, the step of forming a first prefabricated layer on the substrate structure includes: disposing a first perovskite precursor solution on the substrate structure, and performing heat treatment to form the first prefabricated layer, wherein the first perovskite precursor solution includes a self-assembled compound and a first perovskite precursor.

[0010] In the technical solution of the embodiment of the present application, a first prefabricated layer is formed by setting a first perovskite precursor liquid on a substrate structure and then subjecting it to heat treatment. The solution method for preparing the first prefabricated layer is conducive to the preparation of large-area perovskite films, and has the advantages of simplicity, low cost and scalability.

[0011] In some embodiments, the concentration of the self-assembly compound in the first perovskite precursor solution is 0.5 mg / mL to 4 mg / mL.

[0012] In the technical solution of the embodiment of the present application, the self-assembled compound with a concentration within the above range can effectively passivate the lower interface of the first prefabricated layer, reduce the defects of the lower interface of the subsequently formed perovskite layer, and improve the photoelectric conversion efficiency of the perovskite solar cell.

[0013] In some embodiments, in the first perovskite precursor solution, the concentration of the first perovskite precursor is 200 mg / mL to 500 mg / mL.

[0014] In the technical solution of the embodiment of the present application, the first perovskite precursor having a concentration within the above range is advantageous for preparing perovskite thin films by a large-area solution method, with uniform film formation and a simple preparation method.

[0015] In some embodiments, the self-assembled compound has a conjugated structure and an anchoring group connected to the conjugated structure. This type of self-assembled compound has good conductive effect.

[0016] In some embodiments, the conjugated structure includes at least one of a benzene ring, a diphenyl ring, a 3-triethoxysilyl group, and a 2-aminothiazolyl group.

[0017] In some embodiments, the anchoring group comprises a Lewis acid type group.

[0018] In some embodiments, the Lewis acid group includes at least one of a carboxyl group, a phosphoric acid group, a hydroxyl group, an amine group, and a boronic acid group.

[0019] In some embodiments, the self-assembling compound includes at least one of 3-triethoxysilylpropionitrile, 2-aminothiazole-4-acetic acid, (R)-3-(1-aminoethyl)phenol hydrochloride, diethanolamine, benzoic acid, dimethoxydiphenylamine-substituted carbazole, or 4-fluorophenylboronic acid.

[0020] In some embodiments, the first perovskite precursor solution comprises a BX2 precursor solution; B comprises inorganic cations and / or organic cations, including Pb 2+ 、Sn 2+ At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - At least one of .

[0021] In some embodiments, the step of forming the first prefabricated layer on the substrate structure includes depositing a self-assembly compound and a first perovskite precursor on the substrate structure to form the first prefabricated layer.

[0022] In the technical solution of the embodiment of the present application, a first prefabricated layer is formed by depositing a self-assembled compound and a first perovskite precursor on a substrate structure. The deposition method for preparing the first prefabricated layer has the advantages of good density, good uniformity, and controllable film thickness.

[0023] In some embodiments, the mass ratio of the passivating agent to the second perovskite precursor is (0.5-4):(200-500).

[0024] In the technical solution of the embodiment of the present application, the passivator taken from the above range forms a passivation structure on the upper interface of the perovskite layer, reducing the defects of the upper interface of the perovskite layer and further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0025] In some embodiments, the concentration of the passivating agent in the second perovskite precursor solution is 0.5 mg / mL to 4 mg / mL.

[0026] In the technical solution of the embodiment of the present application, a passivating agent with a concentration within the above range forms a passivation structure on the upper interface of the perovskite layer, thereby reducing defects on the upper interface of the perovskite layer and further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0027] In some embodiments, in the second perovskite precursor solution, the concentration of the second perovskite precursor is 200 mg / mL to 500 mg / mL.

[0028] In the technical solution of the embodiment of the present application, the second perovskite precursor having a concentration within the above range is conducive to forming a uniform and flat perovskite film.

[0029] In some embodiments, the passivating agent includes at least one of piperazine, N-methyl-1,3-propane diammonium diiodide, 3-aminopyridine, ferrocene, ethylenediamine, benzylamine, naphthalene diimide, rhodamine 101 inner salt and the like homologues or derivatives.

[0030] In some embodiments, the second perovskite precursor solution comprises an AX precursor solution, wherein A comprises inorganic cations and / or organic cations, and MA comprises + , FA + 、Cs + , Rb + At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - At least one of .

[0031] The second technical solution adopted in the present application is: to provide a perovskite solar cell, the perovskite solar cell includes at least a perovskite layer, the perovskite layer includes a self-assembled compound and a passivator, the self-assembled compound is located on one side interface of the perovskite layer, and the passivator is located on the other side interface of the perovskite layer.

[0032] In the technical solution of the embodiment of the present application, a self-assembled compound and a passivator are provided in the perovskite layer of the perovskite solar cell, the self-assembled compound passivates the interface on one side of the perovskite layer, and the passivator passivates the interface on the other side of the perovskite layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0033] In some embodiments, the perovskite solar cell further comprises a first electrode, a second electrode, a first charge transport layer, and a second charge transport layer. The first electrode is located near the light-entering side; the perovskite layer is located between the first electrode and the second electrode; the first charge transport layer is located between the first electrode and the perovskite layer; and the second charge transport layer is located between the second electrode and the perovskite layer. One of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0034] The third technical solution adopted in the present application is to provide an electrical device, which includes the perovskite solar cell as described above or the perovskite solar cell prepared by the method for preparing the perovskite solar cell as described above.

[0035] Since the electrical device of the present application includes the perovskite solar cell provided by the present application, it has at least the same advantages as the perovskite solar cell.

[0036] The fourth technical solution adopted in the present application is: to provide a power generation device, which includes the perovskite solar cell as described above or the perovskite solar cell prepared by the method for preparing the perovskite solar cell as described above.

[0037] Since the power generation device of the present application includes the perovskite solar cell provided by the present application, it has at least the same advantages as the perovskite solar cell.

[0038] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0040] Figure 1 Schematic diagram of the structure of a perovskite solar cell according to some embodiments of the present application;

[0041] Figure 2 This is a schematic structural diagram of an electrical device according to some embodiments of the present application;

[0042] Figure 3 This is a schematic structural diagram of a power generation device according to some embodiments of the present application. DETAILED DESCRIPTION

[0043] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0045] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0046] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0047] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0048] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0049] In current technology, in order to improve the photoelectric conversion efficiency of perovskite solar cells, only the lower interface of the perovskite layer is optimized. However, there are still uncoordinated ion defects on the upper interface of the perovskite layer. These defects will introduce defect energy levels on the upper interface of the perovskite layer, affecting carrier transport and thus affecting the photoelectric conversion efficiency of the perovskite solar cell.

[0050] The present application provides a method for preparing a perovskite solar cell, the method comprising: providing a substrate structure for arranging a perovskite layer; forming a first prefabricated layer on the substrate structure, wherein the first prefabricated layer comprises a self-assembled compound and a first perovskite precursor; arranging a second perovskite precursor solution on the first prefabricated layer, and heat-treating the first prefabricated layer and the second perovskite precursor solution to form a perovskite layer, wherein the second perovskite precursor solution comprises a passivator and a second perovskite precursor; wherein the self-assembled compound is located at the lower interface of the perovskite layer, and the passivator is located at the upper interface of the perovskite layer. The lower interface is the interface of the perovskite layer facing the substrate structure, and the upper interface is the interface of the perovskite layer facing away from the substrate structure.

[0051] In the technical solutions of the embodiments of the present application, self-assembly refers to a technology in which basic structural units (molecules, nanomaterials, micrometer-scale or larger substances) spontaneously form an ordered structure. During the self-assembly process, the basic structural units spontaneously organize or aggregate into a stable structure with a certain regular geometric appearance under the interaction of non-covalent bonds. This embodiment prepares the perovskite layer by a two-step method: a first prefabricated layer is set on the substrate structure, and a self-assembly compound is added to the first prefabricated layer. The self-assembly compound has a strong interaction with the lower interface of the first prefabricated layer, and the self-assembly compound spontaneously arranges in a directional manner and is enriched at the lower interface of the first prefabricated layer to form a lower passivation structure, thereby reducing the defects of the lower interface of the subsequently formed perovskite layer. Then, a second perovskite precursor liquid is placed on the first prefabricated layer, and then heat treated. The first prefabricated layer and the second perovskite precursor liquid form a perovskite layer. The passivator in the second perovskite precursor liquid is enriched toward the upper interface, forming a passivation structure at the upper interface of the perovskite layer, thereby reducing the defects of the upper interface of the perovskite layer. Therefore, the preparation method of the perovskite solar cell provided in the present application can simultaneously reduce the defects of the lower interface and the upper interface of the perovskite layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0052] In addition, in addition to the self-assembled compounds enriched at the lower interface of the perovskite layer and the passivators at the upper interface, the self-assembled compounds and passivators retained inside the perovskite layer can also passivate the defects inside the perovskite layer, further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0053] It should be noted that in the manufacturing process of perovskite solar cells, the semi-finished product structure formed before the step of setting the perovskite layer can be called a substrate structure, and the substrate structure is used to set the first prefabricated layer.

[0054] For example, in some embodiments, the substrate structure includes at least a base and a transparent electrode layer disposed on the base, and the perovskite layer may be disposed on the transparent electrode layer.

[0055] In some embodiments, the substrate structure includes at least a substrate, a transparent electrode layer disposed on the substrate, and a charge transport layer. The perovskite layer can be disposed on the charge transport layer, wherein the charge transport layer includes a hole transport layer or an electron transport layer.

[0056] The two-step process for preparing the perovskite layer includes at least one of slit coating, doctor blade coating, screen printing and spin coating.

[0057] In some embodiments, the mass ratio of the self-assembly compound to the first perovskite precursor is (0.5-4):(200-500).

[0058] In the technical solutions of the embodiments of the present application, the self-assembled compound within the above range can passivate the lower interface of the first prefabricated layer, reduce defects in the lower interface of the subsequently formed perovskite layer, and improve the photoelectric conversion efficiency of the perovskite solar cell. The mass ratio of the self-assembled compound to the first perovskite precursor can be 0.5:200, 0.5:500, 0.9:250, 2:295, 2.5:350, 3.2:420, 3.5:480, 4:200, 4:500, etc.

[0059] In some embodiments, the step of forming a first prefabricated layer on the substrate structure includes: disposing a first perovskite precursor solution on the substrate structure, and performing heat treatment to form the first prefabricated layer, wherein the first perovskite precursor solution includes a self-assembled compound and a first perovskite precursor.

[0060] In the technical solution of the embodiment of the present application, after the first perovskite precursor liquid is set on the substrate structure, heat treatment is required. The heat treatment here is annealing treatment. In the related art, a robot is used to transport the large-area substrate structure coated with the first perovskite precursor liquid into an oven.

[0061] In some embodiments, to achieve rapid heating and save process time, a large-area substrate structure can be provided with a movable infrared heating device to heat the first perovskite precursor solution on the surface of the substrate structure. Specifically, the liquid outlet of the device moves back and forth so that the surface of the substrate structure is evenly covered with the first perovskite precursor solution. At the same time, an infrared heating device is integrated into the mobile end of the device. The device moves while forming the film to dry the first perovskite precursor solution. This allows the first perovskite precursor solution on the surface of the substrate structure to dry quickly without adding additional equipment. This is economical, time-saving, and eliminates the need for transportation, thus saving process time.

[0062] In this embodiment, a first perovskite precursor solution is placed on a substrate structure and then heat-treated to form a first prefabricated layer. The solution-based method for preparing the first prefabricated layer facilitates the production of large-area perovskite films, offering advantages such as simplicity, low cost, and scalability. Solution-based methods include slit coating, spray coating, and inkjet printing.

[0063] In some embodiments, the concentration of the self-assembly compound in the first perovskite precursor solution is 0.5 mg / mL to 4 mg / mL.

[0064] In the technical solution of the embodiment of the present application, the self-assembled compound with a concentration within the above range can effectively passivate the lower interface of the first prefabricated layer, reduce the defects of the lower interface of the subsequently formed perovskite layer, and improve the photoelectric conversion efficiency of the perovskite solar cell. The concentration of the self-assembled compound can be 0.5 mg / mL, 0.85 mg / mL, 1.42 mg / mL, 1.8 mg / mL, 2.6 mg / mL, 3.2 mg / mL, 4 mg / mL, etc.; or a range consisting of any two of the above values, for example, 0.5 mg / mL to 1.8 mg / mL, 1.8 mg / mL to 4 mg / mL, etc.

[0065] In some embodiments, in the first perovskite precursor solution, the concentration of the first perovskite precursor is 200 mg / mL to 500 mg / mL.

[0066] In the technical solutions of the embodiments of the present application, the first perovskite precursor having a concentration within the above range is advantageous for preparing perovskite thin films over a large area by solution method, resulting in uniform film formation and a simple preparation method. The concentration of the first perovskite precursor can be 200 mg / mL, 250 mg / mL, 310 mg / mL, 385 mg / mL, 423 mg / mL, 485 mg / mL, 500 mg / mL, etc.; or a range consisting of any two of the above values, for example, 200 mg / mL to 310 mg / mL, 310 mg / mL to 500 mg / mL, etc.

[0067] When preparing the first perovskite precursor solution, the liquid phase method includes slit coating and blade coating. The coating die head movement speed of the slit coating and blade coating is 10 mm / s to 100 mm / s, the extrusion speed of the slit coating is 10 ul / s to 500 ul / s, the slit height is 10 μm to 140 μm, and the wet film thickness of the first perovskite precursor solution is formed in the range of 2 μm to 10 μm.

[0068] It should be noted that, in the process of slit coating and doctor blade coating, as long as the die moving speed, the extrusion speed of slit coating, and the slit height are controlled, a liquid film of the first perovskite precursor solution with a wet film thickness of 2 μm-10 μm can be obtained.

[0069] The liquid film of the first perovskite precursor solution is baked, and the power of the infrared heating lamp is adjusted to heat at 50° C. to 120° C. for 30 seconds to 100 seconds.

[0070] In some embodiments, the self-assembled compound has a conjugated structure and an anchoring group connected to the conjugated structure. This type of self-assembled compound has good conductive effect.

[0071] In some embodiments, the conjugated structure includes at least one of a benzene ring, a diphenyl ring, a 3-triethoxysilyl group, and a 2-aminothiazolyl group.

[0072] In some embodiments, the anchoring group comprises a Lewis acid type group.

[0073] In some embodiments, the Lewis acid group includes at least one of a carboxyl group, a phosphoric acid group, a hydroxyl group, an amine group, and a boronic acid group.

[0074] In some embodiments, the self-assembling compound includes at least one of 3-triethoxysilylpropionitrile, 2-aminothiazole-4-acetic acid, (R)-3-(1-aminoethyl)phenol hydrochloride, diethanolamine, benzoic acid, dimethoxydiphenylamine-substituted carbazole, or 4-fluorophenylboronic acid.

[0075] In some embodiments, the first perovskite precursor solution comprises a BX2 precursor solution; B comprises inorganic cations and / or organic cations, including Pb 2+ 、Sn 2+ At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - The solvent used in the first perovskite precursor solution may include at least one of DMF (N,N-dimethylacetamide), DMSO (dimethyl sulfoxide), NMP (1-methyl-2-pyrrolidone), and γ-butyrolactone.

[0076] In some embodiments, the step of forming the first prefabricated layer on the substrate structure includes depositing a self-assembly compound and a first perovskite precursor on the substrate structure to form the first prefabricated layer.

[0077] In the technical solution of the embodiment of the present application, a first prefabricated layer is formed by depositing a self-assembled compound and a first perovskite precursor on a substrate structure. The deposition method for preparing the first prefabricated layer is conducive to the preparation of large-area perovskite films, and has the advantages of good density, good uniformity, and controllable film thickness.

[0078] In some embodiments, the self-assembled compound and the first perovskite precursor can be deposited on the substrate structure to form a first prefabricated layer by vacuum evaporation, magnetron sputtering, etc. During the deposition process, parameters such as power, atmosphere, time, and temperature can be controlled to control physical parameters such as thickness and density of the first prefabricated layer.

[0079] In some embodiments, the mass ratio of the passivating agent to the second perovskite precursor is (0.5-4):(200-500).

[0080] In the technical solutions of the embodiments of the present application, the passivating agent within the above range forms a passivation structure on the upper interface of the perovskite layer, reducing defects on the upper interface of the perovskite layer and further improving the photoelectric conversion efficiency of the perovskite solar cell. The mass ratio of the passivating agent to the second perovskite precursor can be 0.5:200, 0.5:500, 0.9:250, 2:295, 2.5:350, 3.2:420, 3.5:480, 4:200, 4:500, etc.; or a range consisting of any two of the above values, for example, 0.5:200 to 2:295, 2.5:350 to 4:500, etc.

[0081] In some embodiments, the concentration of the passivating agent in the second perovskite precursor solution is 0.5 mg / mL to 4 mg / mL.

[0082] In the technical solutions of the embodiments of the present application, a passivating agent having a concentration within the above range forms a passivating structure on the upper interface of the perovskite layer, thereby reducing defects on the upper interface of the perovskite layer and further improving the photoelectric conversion efficiency of the perovskite solar cell. The concentration of the passivating agent can be 0.5 mg / mL, 0.75 mg / mL, 1.48 mg / mL, 1.9 mg / mL, 2.5 mg / mL, 3.5 mg / mL, 4 mg / mL, etc.; or a range consisting of any two of the above values, for example, 0.5 mg / mL to 1.9 mg / mL, 1.9 mg / mL to 4 mg / mL, etc.

[0083] In some embodiments, in the second perovskite precursor solution, the concentration of the second perovskite precursor is 200 mg / mL to 500 mg / mL.

[0084] In the technical solutions of the embodiments of the present application, the concentration of the second perovskite precursor within the above range is conducive to the formation of a uniform and flat perovskite film. The concentration of the second perovskite precursor can be 200 mg / mL, 280 mg / mL, 350 mg / mL, 395 mg / mL, 443 mg / mL, 475 mg / mL, 500 mg / mL, etc.; or a range consisting of any two of the above values, for example, 200 mg / mL to 350 mg / mL, 350 mg / mL to 500 mg / mL, etc.

[0085] When preparing the second perovskite precursor solution, the liquid phase method includes slit coating and blade coating. The coating die head movement speed of slit coating and blade coating is 10 mm / s to 100 mm / s, the extrusion speed of slit coating is 10 ul / s to 500 ul / s, and the slit height is 70 μm to 120 μm to form a liquid film of the second perovskite precursor solution.

[0086] After the second perovskite precursor liquid film is prepared, the substrate is transported to a vacuum drying device and vacuum flash evaporation technology is used with a vacuum pressure of 10 -4 Pa~10 -6 Pa, the vacuum time is 50s to 200s, after which the substrate is moved into an oven and heated at 100°C to 140°C for 10min to 15min. After cooling to room temperature, the perovskite layer is prepared.

[0087] In some embodiments, the passivating agent includes at least one of piperazine, N-methyl-1,3-propane diammonium diiodide, 3-aminopyridine, ferrocene, ethylenediamine, benzylamine, naphthalene diimide, rhodamine 101 inner salt and the like homologues or derivatives.

[0088] In some embodiments, the second perovskite precursor solution comprises an AX precursor solution, wherein A comprises inorganic cations and / or organic cations, and MA comprises + , FA + 、Cs + , Rb + At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - The solvent used in the second perovskite precursor solution may include at least one of DMF (N,N-dimethylacetamide), DMSO (dimethyl sulfoxide), NMP (1-methyl-2-pyrrolidone), and γ-butyrolactone.

[0089] The second technical solution adopted in the present application is: to provide a perovskite solar cell, the perovskite solar cell includes at least a perovskite layer, the perovskite layer includes a self-assembled compound and a passivator, the self-assembled compound is located on one side interface of the perovskite layer, and the passivator is located on the other side interface of the perovskite layer.

[0090] In the technical solution of the embodiment of the present application, a self-assembled compound and a passivator are provided in the perovskite layer of the perovskite solar cell, the self-assembled compound passivates the interface on one side of the perovskite layer, and the passivator passivates the interface on the other side of the perovskite layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0091] In some embodiments, reference Figure 1 Perovskite solar cells can also include a transparent substrate layer, a transparent conductive first electrode, a first charge transport layer, a second charge transport layer, and a second electrode. The first electrode is close to the light-entering side; the perovskite layer is located between the first and second electrodes; the first charge transport layer is located between the first electrode and the perovskite layer; and the second charge transport layer is located between the second electrode and the perovskite layer. One of the first and second charge transport layers is an electron transport layer, and the other is a hole transport layer.

[0092] The transparent substrate layer serves as the support of the perovskite solar cell, and its light transmittance and strength need to meet the requirements of the perovskite solar cell, including but not limited to glass or PET (polyethylene terephthalate), PI (polyimide), etc.

[0093] The first electrode is a transparent conductive layer, whose function is to conduct photogenerated carriers. Common FTO (F-doped tin oxide) can filter out ultraviolet rays that are destructive to the perovskite layer while conducting electricity. In addition, there are ITO (In-doped tin oxide), AZO (Al-doped zinc oxide), etc. The transparent conductive layer can choose a combination of one or more of them.

[0094] The hole transport layer is one or more materials such as 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), NiOx, poly-3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), WO3, etc. that can transport holes and block electrons.

[0095] The electron transport layer is responsible for extracting electrons and blocking holes, and is generally one or more of TiO2, SnO2, ZnO, [6,6]-phenyl-C61-butyric acid isomethyl ester (PCBM), and C60.

[0096] The second electrode is an electrode layer, including one or more of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, MoO3, SnO2, IWO, ITO, FTO, and AZO.

[0097] In some embodiments, the perovskite solar cell may not include a hole transport layer and / or an electron transport layer.

[0098] See Figure 2 The present application also provides an electrical device 1000, which includes the perovskite solar cell as described above or a perovskite solar cell prepared by the method for preparing a perovskite solar cell as described above.

[0099] In the present application, the perovskite solar cell serves as a power source for the electrical device 1000; alternatively, the perovskite solar cell can serve as an energy storage unit for the electrical device 1000. By way of example, the electrical device 1000 can be a lighting element, a display element, or a car.

[0100] See Figure 3The present application also provides a power generation device 2000, comprising the aforementioned perovskite solar cell or a perovskite solar cell prepared by the aforementioned method for preparing a perovskite solar cell. The power generation device 2000 may include a perovskite solar cell and an energy storage device, which may be a secondary battery.

[0101] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail with reference to the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0102] The features and performance of the present application are further described in detail below with reference to the embodiments.

[0103] Example 1

[0104] (1) Take a 2 cm × 2 cm piece of FTO conductive glass and laser etch it to leave an insulating area. Then, ultrasonicate it with deionized water, detergent, ethanol, isopropyl alcohol, acetone, ethanol, and deionized water for 20 minutes, then blow dry it with nitrogen and set aside.

[0105] (2) Preparation of hole transport layer: NiOx nanoparticles with an average particle size of 5 nm were added to ethanol to form a solution with a concentration of 10 mg / L. The solution was spin-coated on a 2 cm × 2 cm FTO substrate at a speed of 3000 rpm and annealed at 200 °C for 15 min to obtain a hole transport layer with a thickness of 20 nm. The solution was then cooled naturally for later use.

[0106] (3) Preparation of the first perovskite precursor solution:

[0107] ① Selection of solvent for the first perovskite precursor solution: Mix dimethylformamide and dimethyl sulfoxide in a volume ratio of 10:1.

[0108] ② Selection of the solute BX2 of the first perovskite precursor solution: B selects Pb 2+ , X selects Br - and I - , where Br - with I - The molar ratio is 0.97:0.03.

[0109] ③ Concentration of the solute BX2 in the first perovskite precursor solution: 360 mg / mL.

[0110] ④ Selection of the self-assembly compound in the first perovskite precursor solution: (R)-3-(1-aminoethyl)phenol hydrochloride.

[0111] ⑤ The concentration of the self-assembly compound in the first perovskite precursor solution is selected as: 0.5 mg / mL.

[0112] (4) Processing of the first prefabricated layer:

[0113] A first prefabricated layer was prepared on a substrate such as TCO / NiOx / PTAA / PEDOT:PSS using a liquid phase method, including slit coating and blade coating. The coating die head travel speed for both slit coating and blade coating was 10 mm / s, the extrusion rate for slit coating was 100 ul / s, and the slit height was 100 μm. A first perovskite precursor film with a wet film thickness of 4 μm was formed. The first perovskite precursor film was then baked, with the infrared heating lamp power adjusted to 2000 W.

[0114] (5) Preparation of the second perovskite precursor solution:

[0115] ① Selection of solvent for the second perovskite precursor solution: Mix dimethylformamide and dimethyl sulfoxide in a volume ratio of 10:1.

[0116] ②Selection of solute AX for the second perovskite precursor solution: A selects FA + , X selects Br - and I - , where Br - with I - The ratio is 0.97:0.03.

[0117] ③ Concentration of the solute AX in the second perovskite precursor solution: 157 mg / mL.

[0118] ④ Selection of passivating agent in the second perovskite precursor solution: piperazine.

[0119] ⑤ The passivation agent concentration in the second perovskite precursor solution is selected as: 0.5 mg / mL.

[0120] (6) Perovskite layer processing:

[0121] A second perovskite precursor liquid film layer is formed on the first prefabricated layer, wherein the liquid phase method includes slit coating and blade coating. The coating die moving speed of slit coating and blade coating is 10 mm / s, the extrusion speed of slit coating is 100 ul / s, and the slit height is 100 μm. After the second perovskite precursor liquid film layer is prepared, the substrate is transported to a vacuum drying device and vacuum flash evaporation technology is used with a vacuum pressure of 10 -3Pa, the vacuum time is 90s, after which the substrate is moved into an oven for annealing at a heating temperature of 150°C for 15 minutes. After cooling to room temperature, the perovskite layer is prepared.

[0122] (7) Preparation of electron transport layer: A PCBM / BCP solution was spin-coated on the perovskite layer at a rotation speed of 3000 rpm or a PCBM / BCP layer was prepared by vacuum thermal evaporation to form an electron transport layer and a barrier layer, wherein the thickness of the PCBM electron transport layer was 15 nm and the thickness of the BCP barrier layer was 8 nm.

[0123] (8) Preparation of electrode layer: A Cu counter electrode is deposited on the electron transport layer using a mask with a specific pattern by thermal evaporation to obtain a perovskite solar cell.

[0124] Examples 2 to 7, Comparative Examples 1 to 9

[0125] Similar to Example 1, except that the formula and process in steps (3)(4)(5)(6) are adjusted. Please see Table 1 for details.

[0126] The battery devices 1 to 16 obtained in the above Examples 1 to 7 and Comparative Examples 1 to 9 were subjected to battery performance tests to obtain Tables 1 and 2.

[0127] 1. Photoelectric conversion efficiency test method:

[0128] Under standard simulated sunlight (AM1.5G, 100mW / cm 2 ) irradiation, the battery performance is tested and the IV curve is obtained. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open-circuit voltage Voc (V), maximum optical output current Jmpp (mA), and maximum optical output voltage Vmpp (V). The cell's fill factor (FF) (in %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The cell's photoelectric conversion efficiency (PCE) (in %) is calculated using the formula PCE = Jsc × Voc × FF / Pw, where Pw represents the input power (in mW).

[0129]

[0130]

[0131] Table 2 Performance parameters of the embodiments and comparative examples

[0132] Device Example <![CDATA[Short-circuit current (mA / cm 2 )]]> Open circuit voltage (V) Fill Factor Photoelectric conversion efficiency 1 Example 1 23.31 1.11 73％ 18.89％ 2 Example 2 22.12 1.1 81％ 19.71％ 3 Example 3 23.25 1.07 76％ 18.91％ 4 Example 4 22.51 1.01 73％ 16.60％ 5 Example 5 22.14 1.04 79％ 18.19％ 6 Example 6 23.45 1.09 80％ 20.45％ 7 Example 7 23.96 1.06 74％ 18.79％ 8 Comparative Example 1 20.04 1.02 71％ 14.51％ 9 Comparative Example 2 20.84 0.96 69％ 13.80％ 10 Comparative Example 3 20.58 1.01 72％ 14.97％ 11 Comparative Example 4 21.67 1.04 68％ 15.33％ 12 Comparative Example 5 20.4 0.98 74％ 14.79％ 13 Comparative Example 6 21.85 1 71％ 15.51％ 14 Comparative Example 7 21.21 1.03 75％ 16.38％ 15 Comparative Example 8 20.31 0.99 71％ 14.28％ 16 Comparative Example 9 21.46 0.95 70％ 14.27％

[0133] As can be seen from the relevant data in Tables 1 and 2, the battery devices 1 to 7 of Examples 1 to 7 all added a self-assembly compound and a passivator to the perovskite layer, wherein the self-assembly compound was used in the first prefabricated layer and the passivator was used in the second perovskite precursor solution, and the photoelectric conversion efficiency was higher than that of Comparative Examples 1 to 9. This indicates that the present application adds a self-assembly compound and a passivator to the perovskite layer through a two-step method, which can simultaneously reduce defects at the lower and upper interfaces of the perovskite layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0134] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for preparing a perovskite solar cell, characterized in that: include: Providing a substrate structure for arranging a perovskite layer; forming a first prefabricated layer on the substrate structure, wherein the first prefabricated layer comprises a self-assembled compound and a first perovskite precursor; Disposing a second perovskite precursor solution on the first prefabricated layer and subjecting the first prefabricated layer and the second perovskite precursor solution to heat treatment to form the perovskite layer, wherein the second perovskite precursor solution includes a passivator and a second perovskite precursor; Wherein, the self-assembled compound is located at the lower interface of the perovskite layer, and the passivating agent is located at the upper interface of the perovskite layer; The lower interface is an interface where the perovskite layer faces the substrate structure, and the upper interface is an interface where the perovskite layer faces away from the substrate structure.

2. The method for preparing a perovskite solar cell according to claim 1, wherein: The mass ratio of the self-assembly compound to the first perovskite precursor is (0.5-4):(200-500).

3. The method for preparing a perovskite solar cell according to claim 1 or 2, wherein in the step of forming the first prefabricated layer on the substrate structure, the method comprises: A first perovskite precursor solution is provided on the substrate structure and subjected to heat treatment to form a first prefabricated layer, wherein the first perovskite precursor solution includes a self-assembly compound and a first perovskite precursor.

4. The method for preparing a perovskite solar cell according to claim 3, wherein: In the first perovskite precursor solution, the concentration of the self-assembly compound is 0.5 mg / mL to 4 mg / mL.

5. The method for preparing a perovskite solar cell according to claim 3 or 4, wherein: In the first perovskite precursor solution, the concentration of the first perovskite precursor is 200 mg / mL to 500 mg / mL.

6. The method for preparing a perovskite solar cell according to any one of claims 1 to 5, wherein: The self-assembly compound has a conjugated structure and an anchoring group connected to the conjugated structure.

7. The method for preparing a perovskite solar cell according to claim 6, wherein: The conjugated structure includes at least one of a benzene ring, a diphenyl ring, a 3-triethoxysilyl group, and a 2-aminothiazolyl group.

8. The method for preparing a perovskite solar cell according to claim 6 or 7, wherein: The anchoring group comprises a Lewis acid type group.

9. The method for preparing a perovskite solar cell according to claim 8, wherein: The Lewis acid group includes at least one of a carboxyl group, a phosphoric acid group, a hydroxyl group, an amino group, and a boric acid group.

10. The method for preparing a perovskite solar cell according to any one of claims 1 to 9, wherein: The self-assembly compound includes at least one of 3-triethoxysilylpropionitrile, 2-aminothiazole-4-acetic acid, (R)-3-(1-aminoethyl)phenol hydrochloride, diethanolamine, benzoic acid, dimethoxydiphenylamine substituted carbazole or 4-fluorophenylboronic acid.

11. The method for preparing a perovskite solar cell according to any one of claims 1 to 10, wherein: The first perovskite precursor solution includes a BX2 precursor solution; B includes inorganic cations and / or organic cations, including Pb 2+ 、Sn 2+ At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - At least one of .

12. The method for preparing a perovskite solar cell according to claim 1 or 2, wherein in the step of forming a first prefabricated layer on the substrate structure, the method comprises: The self-assembled compound and the first perovskite precursor are deposited on the substrate structure to form a first prefabricated layer.

13. The method for preparing a perovskite solar cell according to any one of claims 1 to 12, wherein: The mass ratio of the passivator to the second perovskite precursor is (0.5-4):(200-500).

14. The method for preparing a perovskite solar cell according to any one of claims 1 to 13, wherein: In the second perovskite precursor solution, the concentration of the passivating agent is 0.5 mg / mL to 4 mg / mL.

15. The method for preparing a perovskite solar cell according to any one of claims 1 to 14, wherein: In the second perovskite precursor solution, the concentration of the second perovskite precursor is 200 mg / mL to 500 mg / mL.

16. The method for preparing a perovskite solar cell according to any one of claims 1 to 14, wherein: The passivating agent includes at least one of piperazine, N-methyl-1,3-propane diammonium diiodide, 3-aminopyridine, ferrocene, ethylenediamine, benzylamine, naphthalene diimide, rhodamine 101 inner salt and the like homologues or derivatives.

17. The method for preparing a perovskite solar cell according to any one of claims 1 to 16, wherein: The second perovskite precursor solution includes AX precursor solution, A includes inorganic cations and / or organic cations, including MA + , FA + 、Cs + , Rb + At least one of; X comprises inorganic anions and / or organic anions, including Cl - Br - , I - At least one of .

18. A perovskite solar cell comprising at least a perovskite layer, characterized in that: The perovskite layer includes a self-assembled compound and a passivator, wherein the self-assembled compound is located at one side interface of the perovskite layer, and the passivator is located at the other side interface of the perovskite layer.

19. The method for preparing a perovskite solar cell according to claim 18, wherein: The perovskite solar cell further comprises: a first electrode, close to the light incident side; a second electrode, the perovskite layer being located between the first electrode and the second electrode; a first charge transport layer, located between the first electrode and the perovskite layer; a second charge transport layer, located between the second electrode and the perovskite layer; Wherein, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

20. An electrical device, characterized in that: The invention relates to a perovskite solar cell prepared by the method for preparing a perovskite solar cell according to any one of claims 1 to 17, or a perovskite solar cell according to claim 18 or 19.

21. A power generation device, characterized in that: The invention relates to a perovskite solar cell prepared by the method for preparing a perovskite solar cell according to any one of claims 1 to 17, or a perovskite solar cell according to claim 18 or 19.

Images