Perovskite-crystalline silicon laminated solar cell and preparation method thereof

Abstract

The invention provides a perovskite-crystalline silicon laminated solar cell and a preparation method thereof. The preparation method provided by the invention comprises the step of performing laser patterning treatment on an edge perovskite edge cleaning area of the perovskite solar cell, so that the edge perovskite edge cleaning area becomes an optical filter for filtering short wavelength of 500-1100nm. According to the invention, the laser patterning processing is carried out on the perovskite edge cleaning area on the edge of the perovskite solar cell, so that the crystalline silicon cell does not need to be kept smaller than or equal to the effective area of the perovskite solar cell, the hot spot effect of crystalline silicon is overcome, and the module power is improved.

Description

Technical Field

[0001] The present invention relates to the field of solar cells, and in particular to a perovskite-crystalline silicon stacked solar cell and a preparation method thereof. Background Art

[0002] Perovskite solar cells have attracted much attention due to their tunable band gap, strong light absorption, long carrier diffusion length, high charge carrier mobility, and low-cost solution processing. Perovskite materials can respond to different colors in the solar spectrum by changing their composition, which is a significant advantage over traditional silicon solar cells.

[0003] Perovskite tandem solar cells achieve more efficient use of the solar spectrum and reduce photon thermalization losses through the combination of materials with different band gaps. Compared with two-terminal tandem cells, four-terminal perovskite tandem solar cells have a higher theoretical efficiency limit of 45%. By optimizing the design of perovskite top cells, bottom cells and intermediate interconnect layers, as well as fine-tuning the photoelectric coupling mechanism and interface states, the photoelectric conversion efficiency (PCE) of perovskite / crystalline silicon TSCs has been significantly improved. Due to their flexibility and sustainability, perovskite solar cells are suitable for a variety of application scenarios such as building integrated photovoltaics (BIPV), portable electronic devices and clothing. As the technology matures and costs decrease, the application of perovskite solar cells in residential and commercial fields is increasing.

[0004] CN116520467A discloses a method for preparing and applying perovskite micro-triangular gratings, which relate to the field of femtosecond laser micro-nanoprocessing technology. This application utilizes a femtosecond laser direct writing method to process FAPbI3 perovskite thin films to produce perovskite triangular gratings. The FAPbI3 perovskite film, prepared using a dual-source co-evaporation method, exhibits low surface roughness, good surface coverage, high crystallinity, and small grain sizes.

[0005] In the current prior art perovskite / crystalline silicon tandem cells, the crystalline silicon cell is often required to be equal to or slightly smaller than the effective area of ​​the perovskite top cell (excluding the clear edge area), otherwise it will not work properly due to the hot spot effect of the crystalline silicon cell. Summary of the Invention

[0006] In response to the problems existing in the prior art, the present invention provides a perovskite-crystalline silicon tandem solar cell and a method for preparing the same. The present invention performs laser patterning on the perovskite edge cleanup region of the perovskite solar cell, turning the edge perovskite cleanup region into a filter that filters out short-wavelength bands similar to the perovskite absorption band. This ensures that the light transmittance of the treated edge perovskite cleanup region and the perovskite absorption layer region are consistent, eliminating the need to maintain the active area of ​​the crystalline silicon cell smaller than or equal to the perovskite solar cell, thereby overcoming the hot spot effect of crystalline silicon and increasing module power. When the crystalline silicon cell area is larger than the active area of ​​the solar cell, the effective absorption area of ​​the crystalline silicon portion can be increased.

[0007] Specifically, the first aspect of the present invention provides a perovskite solar cell, wherein the edge perovskite clear edge region of the perovskite solar cell contains a pattern processed by laser patterning, so that the edge perovskite clear edge region becomes a filter to filter short wavelengths of 500-1100nm.

[0008] In one or more embodiments, the difference in light transmittance between the edge perovskite clear edge region and the perovskite light absorbing layer region after the laser patterning process is within 30%.

[0009] In one or more embodiments, the difference in light transmittance between the laser patterned edge perovskite clear edge region and the perovskite light absorption layer region within the wavelength range of 500-700 nm and the wavelength range of 800-1100 nm is less than 10%.

[0010] In one or more embodiments, the difference in light transmittance between the edge perovskite clear edge region and the perovskite light absorption layer region after the laser patterning process within a wavelength range of 700-800 nm is ≤30%.

[0011] In one or more embodiments, the edge perovskite cleared region is the cleared transparent conductive electrode and transparent glass substrate region.

[0012] In one or more embodiments, the pattern is of indirect vertical stripe type and / or concentric circle type.

[0013] In one or more embodiments, the perovskite solar cell includes a transparent glass substrate, a transparent conductive electrode, a hole transport layer, a perovskite light absorbing layer, an electron transport layer, and a top electrode, which are sequentially arranged.

[0014] A second aspect of the present invention provides a method for preparing a perovskite solar cell as described in any embodiment of the present invention, the method comprising the step of performing laser patterning on the perovskite edge clearing area at the edge of the perovskite solar cell, wherein the laser patterning utilizes the interference and diffraction characteristics of light to make this part a filter to filter short wavelengths of 500-1100nm.

[0015] In one or more embodiments, in the laser patterning process, the laser wavelength is 300-400 nm, the frequency is 250-350 kHz, and the power is 20-50 W.

[0016] In one or more embodiments, the laser patterning process is performed using one or more of picosecond UV, femtosecond UV, and nanosecond UV.

[0017] In one or more embodiments, the laser light source for the laser patterning process is picosecond ultraviolet with a laser wavelength of 300-400 nm, a pulse width of 8-12 ps, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , the spot size is 15-25μm, the line width is 20-30μm, and the heat affected zone is <5μm.

[0018] In one or more embodiments, nanosecond ultraviolet laser treatment is performed with a laser wavelength of 300-400 nm, a pulse width of 1-500 ns, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , spot size is 15-25μm, line width is 30-80μm, and heat affected zone is <50μm.

[0019] In one or more embodiments, femtosecond ultraviolet laser treatment is performed with a laser wavelength of 300-400 nm, a pulse width of 800 fs-5 ps, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , spot size is 15-25μm, line width is 30-80μm, and heat affected zone is <50μm.

[0020] In one or more embodiments, the method includes the steps of sequentially arranging a transparent glass substrate, a transparent conductive electrode, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and a top electrode before laser patterning treatment, and performing edge cleaning treatment to obtain an edge perovskite clear edge area.

[0021] A third aspect of the present invention provides a perovskite-crystalline silicon tandem solar cell, which comprises a crystalline silicon cell and a perovskite solar cell as described in any embodiment of the present invention.

[0022] In one or more embodiments, the crystalline silicon cell is selected from one or more of PERC, TOPCon, HJT, BC, TBC, HBC and HPBC.

[0023] In one or more embodiments, the area of ​​the crystalline silicon cell is equal to the total area of ​​the perovskite solar cell; the total area of ​​the perovskite solar cell includes the effective area of ​​the perovskite solar cell and the area of ​​the edge perovskite clear area after laser patterning.

[0024] In one or more embodiments, the perovskite-crystalline silicon tandem solar cell is a four-terminal perovskite-crystalline silicon tandem solar cell.

[0025] A fourth aspect of the present invention provides a method for preparing a perovskite-crystalline silicon tandem solar cell, comprising the following steps:

[0026] S1. Performing laser patterning on the edge of the perovskite solar cell in the clear edge area of ​​the perovskite solar cell. The laser patterning utilizes the interference and diffraction properties of light to make this area a filter to filter short wavelengths of 500-1100 nm.

[0027] S2. Placing the adhesive film between the perovskite solar cell and the crystalline silicon cell for lamination to obtain a perovskite-crystalline silicon stacked solar cell.

[0028] In one or more embodiments, the laser patterning process is as described in any of the embodiments herein.

[0029] In one or more embodiments, the material of the adhesive film is selected from one or more of polyolefin elastomer, ethylene-vinyl acetate copolymer, UV curing adhesive epoxy resin and heat curing adhesive.

[0030] Beneficial effects of the present invention:

[0031] The present invention performs laser patterning on the edge perovskite clear edge area of ​​the perovskite solar cell, and uses the interference and diffraction characteristics of light to make this part a filter, filtering out short-wave bands similar to the perovskite absorption band, so that the spectrum of the processed edge perovskite clear edge area and the perovskite absorption layer area after light transmission is close, thereby eliminating the need to keep the effective area of ​​the crystalline silicon cell smaller than or equal to the effective area of ​​the perovskite solar cell (excluding the edge perovskite clear edge area), overcoming the hot spot effect of crystalline silicon and improving the power of the component. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Schematic diagram of the perovskite structure of Example 1 of the present invention.

[0033] Figure 2 This is the front view of the perovskite structure of Example 1 of the present invention.

[0034] Figure 3 Schematic diagram of the 4T stacked structure of Example 1 of the present invention.

[0035] Figure 4 This is a diagram showing the light transmittance results of the perovskite light absorption layer region and the edge perovskite clear edge region of Example 1 of the present invention.

[0036] Description of reference numerals:

[0037] 1 is the top electrode, 2 is the second electron transport layer, 3 is the first electron transport layer, 4 is the perovskite light absorption layer, 5 is the hole transport layer, 6 is the transparent conductive electrode, 7 is the transparent glass substrate, 8 is the adhesive film, 9 is the crystalline silicon cell, 10 is the edge perovskite clearing area, P1 is the first laser scribed line, P2 is the second laser scribed line, and P3 is the third laser scribed line. DETAILED DESCRIPTION

[0038] To facilitate understanding of the features and effects of the present invention by those skilled in the art, the following provides a general description and definition of the terms and expressions used herein. Unless otherwise indicated, all technical and scientific terms used herein have the ordinary meanings as understood by those skilled in the art with respect to the present invention. In the event of conflict, the definitions herein shall prevail.

[0039] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0040] Herein, “comprising,” “including,” “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of,” for example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to have been disclosed herein.

[0041] Throughout this document, all features, such as values, amounts, amounts, and concentrations, specified in numerical ranges or percentage ranges are provided for simplicity and convenience only. Accordingly, the description of numerical ranges or percentage ranges should be considered to encompass and specifically disclose all possible subranges and individual values ​​within those ranges (including integers and fractions).

[0042] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0043] Herein, when describing embodiments or examples, it should be understood that they are not intended to limit the present invention to these embodiments or examples. On the contrary, all alternatives, modifications and equivalents of the methods and materials described herein are encompassed within the scope defined by the claims.

[0044] In this document, for the sake of brevity, not all possible combinations of the various technical features in each embodiment or example are described. Therefore, as long as there are no contradictions in the combination of these technical features, the various technical features in each embodiment or example can be combined in any way, and all possible combinations should be considered to be within the scope of this specification.

[0045] In this article, edge cleaning refers to the removal of excess material from the edges of perovskite solar cells during their fabrication. This process prevents the negative impact of edge effects on cell performance. Generally speaking, edge cleaning involves removing the hole transport layer, perovskite layer, electron transport layer, and top electrode from the non-active power generation areas of the cell, resulting in a cleared perovskite edge region. Edge cleaning can be performed using techniques well known in the art, including but not limited to nanosecond infrared lasers, nanosecond infrared lasers, picosecond green lasers, picosecond infrared lasers, picosecond ultraviolet lasers, femtosecond green lasers, and femtosecond infrared lasers.

[0046] In this article, the edge perovskite clear edge area refers to the non-functional area between the active area of ​​the battery and the edge of the device after edge clearing treatment.

[0047] Perovskite solar cells

[0048] The edge perovskite clear edge region of the perovskite solar cell of the present invention contains a pattern processed by laser patterning, so that the edge perovskite clear edge region becomes a filter to filter out short wavelengths of 500-1100nm (similar to the perovskite absorption band).

[0049] In the present invention, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region may be within 30%. In some embodiments, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region within the wavelength ranges of 500-700 nm and 800-1100 nm is less than 10%. In some embodiments, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region within the wavelength range of 700-800 nm is ≤30%.

[0050] In some embodiments, the edge perovskite cleaned region is the transparent conductive electrode and the transparent glass substrate region after edge cleaning.

[0051] The perovskite solar cell of the present invention may include a transparent glass substrate, a transparent conductive electrode, a hole transport layer, a perovskite active layer (perovskite light absorbing layer), an electron transport layer and a top electrode, which are arranged in sequence.

[0052] Materials suitable for the transparent conductive electrode of the present invention include, but are not limited to, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), etc. In some embodiments, the thickness of the transparent conductive electrode is 200 nm to 800 nm.

[0053] Materials suitable for the hole transport layer of the present invention include, but are not limited to, one or more of Me-4PACz [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid, [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz), [4-(9H-carbazol-9-yl)butyl]phosphonic acid (4PACz), triphenylamine derivatives, non-triphenylamine nitrogen-containing small molecule materials, CuI, CuSCN, Cu2ZnSnS4, CuO, Cu2O, NiO2, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA). In some embodiments, the thickness of the hole transport layer is 1 nm to 100 nm.

[0054] The active material of the perovskite active layer suitable for the present invention contains an ABX3 compound, where A is a monovalent cation, such as a mixture of one or more monovalent cations selected from cesium, rubidium, methylamine, and formamidinium; B is a divalent cation, such as a mixture of one or more divalent cations selected from lead, copper, zinc, gallium, tin, and calcium; and X is a monovalent anion, such as a mixture of one or more monovalent anions selected from iodine, bromine, chlorine, fluorine, and thiocyanate. In some embodiments, A is cesium and methylamine, B is lead, and X is iodine and bromine. In some embodiments, the perovskite material is Cs 0.25 FA 0.75 Pb(I 0.8 Br 0.2 ) 3, a band gap of approximately 1.68 eV, and a thickness of 500 nm. In some embodiments, the perovskite active layer has a band gap of 1.4-2.0 eV, for example, approximately 1.68 eV. In some embodiments, the perovskite active layer has a thickness of 400 nm-800 nm.

[0055] Materials suitable for the electron transport layer of the present invention include but are not limited to TiO2, ZnO, WO3, SnO2, Zn2SnO4, fullerene and its derivatives (C 60 、PC 61 In some embodiments, the electron transport layer includes a SnO2 layer and a C 60 In some embodiments, the thickness of the electron transport layer is 10 nm to 100 nm.

[0056] Materials suitable for the top electrode of the present invention include, but are not limited to, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), etc. In some embodiments, the thickness of the top electrode is 200 nm to 800 nm.

[0057] In some embodiments, the perovskite solar cell structure of the present invention comprises sub-cells arranged on a transparent conductive substrate in a single row in the longitudinal direction and n columns in the width direction. In some embodiments, the perovskite solar cell has a width of 3 mm to 10 mm and a length of 7 cm to 500 cm, with a column spacing of 0.01 mm to 1 mm.

[0058] Method for preparing perovskite solar cells

[0059] The present invention provides a method for preparing a perovskite-crystalline silicon stacked solar cell, which includes the step of performing laser patterning on the edge perovskite clean-edge area. The laser patterning utilizes the interference and diffraction characteristics of light to make this area a filter, filtering out a short-wave band similar to the perovskite absorption band (500-1100nm).

[0060] In some embodiments, the edge perovskite edge clearing region subjected to laser patterning is the transparent conductive electrode and the transparent glass substrate region after edge clearing.

[0061] In the present invention, one or more of picosecond ultraviolet, nanosecond ultraviolet, and femtosecond ultraviolet can be used for laser patterning. Transparent conductive electrodes have poor infrared absorption, and in laser patterning, transparent conductive electrodes that absorb ultraviolet light better can be used for laser processing.

[0062] In the present invention, the process parameters of the laser patterning treatment may be: laser wavelength of 300-400 nm; frequency of 250-350 kHz; power of 20-50 W.

[0063] In some embodiments, picosecond ultraviolet laser treatment is performed with a laser wavelength of 300-400 nm, a pulse width of 8-12 ps, a frequency of 250-350 kHz, a power of 20-50 W, and an energy density of 0.2-0.8 J / cm 2 , the spot size is 15-25μm, the line width is 20-30μm, and the heat affected zone is <5μm.

[0064] In some embodiments, nanosecond ultraviolet laser treatment is performed with a laser wavelength of 300-400 nm, a pulse width of 1-500 ns, such as 5-50 ns, 80-200 ns, or 250-450 ns, a repetition rate of 250-350 kHz, a power of 20-50 W, and an energy density of 0.2-0.8 J / cm 2, spot size is 15-25μm, line width is 30-80μm, and heat affected zone is <50μm.

[0065] In some embodiments, femtosecond ultraviolet laser treatment is used with a laser wavelength of 300-400 nm, a pulse width of 800 fs-5 ps, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , spot size is 15-25μm, line width is 30-80μm, and heat affected zone is <50μm.

[0066] In the present invention, there is no particular limitation on the shape of the pattern after laser processing, as long as it can achieve the goal of making the edge perovskite clear edge area after laser patterning processing become a filter to filter out the short-wave band similar to the perovskite absorption band, including but not limited to indirect vertical stripe type, concentric elliptical type, etc.

[0067] In some embodiments, the method for preparing the perovskite solar cell comprises the following steps:

[0068] S1. On a transparent glass substrate, a transparent conductive electrode, a hole transport layer, a perovskite active layer (perovskite light absorbing layer), an electron transport layer and a top electrode are sequentially arranged to obtain a perovskite solar cell, and the perovskite solar cell is subjected to edge cleaning treatment to obtain an edge perovskite clear edge region;

[0069] S2. Perform laser patterning on the edge of the perovskite clear edge area, and use the interference and diffraction characteristics of light to make this part a filter to filter out the short-wave band similar to the perovskite absorption band (500-1100nm).

[0070] In the present invention, the laser patterning process is as described above.

[0071] In the present invention, the preparation of the transparent conductive electrode is not particularly limited, and conventional methods for preparing transparent conductive electrodes in the art, such as magnetron sputtering, can be used. The process parameters can be adjusted according to the target thickness of the transparent conductive electrode.

[0072] In some embodiments, a transparent glass substrate covered with a transparent conductive electrode can be subjected to a first laser scribe. The first laser scribe line separates the bottom hole transport layer and the transparent conductive electrode without damaging the glass substrate. In some embodiments, the width of the first laser scribe line is 20-50 μm, such as 30 μm, and the depth of the first laser scribe line is 300-800 nm, such as 500 nm.

[0073] In the present invention, the preparation of the hole transport layer is not particularly limited, and conventional methods for preparing the hole transport layer in the art, such as sputtering, can be used. The process parameters can be adjusted according to the target thickness of the hole transport layer.

[0074] In the present invention, the preparation of the perovskite active layer is not particularly limited. A perovskite precursor solution can be applied to the hole transport layer to form the perovskite light-absorbing layer by a coating method such as spin coating, doctor blade coating, evaporation, printing, spray coating, spray pyrolysis, or slot coating. The coating process parameters are not particularly limited and can be adjusted based on the target thickness of the perovskite active layer.

[0075] In the present invention, the preparation of the electron transport layer is not particularly limited and can be performed using conventional methods for preparing electron transport layers in the art, including but not limited to one or more of spin coating, spray coating, spray pyrolysis, slit coating, and atomic layer deposition. Process parameters can be adjusted based on the target thickness of the electron transport layer.

[0076] In some embodiments, a second laser scribing can be performed on the hole transport layer, the perovskite active layer, and the electron transport layer. The second laser scribing line is a scribing line for etching the hole transport layer, the perovskite active layer, and the electron transport layer, exposing the transparent conductive electrode layer so that the top electrode prepared in the next step is in contact with the transparent conductive electrode layer to form a current path. In some embodiments, the width of the second laser scribing line is 50-200 μm, such as 70 μm. In some embodiments, the depth of the second laser scribing is 300-800 nm, such as 600 nm. In some embodiments, the spacing between the first laser scribing line and the second laser scribing line is 200 μm-300 μm.

[0077] In the present invention, the preparation of the top electrode is not particularly limited, and conventional methods for preparing transparent conductive electrodes in the art, such as magnetron sputtering, can be used. The process parameters can be adjusted according to the target thickness of the top electrode.

[0078] In some embodiments, a third laser scribe may be performed on the hole transport layer, perovskite active layer, electron transport layer, and top electrode. The third laser scribe line separates the metal electrodes of adjacent subcells. The third laser scribe line completely removes the top electrode. In some embodiments, the width of the third laser scribe line is 30-100 μm. In some embodiments, the depth of the third laser scribe line is 200-800 nm, such as 200-400 nm.

[0079] In some embodiments, the laser light sources used for the first laser scribing line, the second laser scribing line, the third laser scribing line and edge cleaning include but are not limited to nanosecond infrared, picosecond green light, picosecond infrared, picosecond ultraviolet, femtosecond green light and femtosecond infrared, etc.

[0080] Perovskite-crystalline silicon tandem solar cells

[0081] The present invention provides a perovskite-crystalline silicon tandem solar cell, which includes a perovskite solar cell and a crystalline silicon cell. The edge perovskite clear edge region of the perovskite solar cell contains a pattern after laser patterning, so that the edge perovskite clear edge region becomes a filter, filtering out a short-wave band of 500-1100nm (similar to the perovskite absorption band).

[0082] In some embodiments, the edge perovskite cleaned region may be the transparent conductive electrode and the transparent glass substrate region after edge cleaning.

[0083] In some embodiments, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region is ≤30%. In some embodiments, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region is <10% in the wavelength range of 500-700 nm and 800-1100 nm. In some embodiments, the difference in light transmittance between the laser patterned edge perovskite cleaned region and the perovskite light absorbing layer region is ≤30% in the wavelength range of 700-800 nm.

[0084] In some embodiments, the pattern may be in the form of indirect vertical stripes and / or concentric ellipses, etc.

[0085] In some embodiments, the area of ​​the crystalline silicon cell is equal to the total area of ​​the perovskite solar cell. The total area of ​​the perovskite solar cell includes the active area of ​​the perovskite solar cell and the area of ​​the edge perovskite clear area after laser patterning.

[0086] In some embodiments, the perovskite-crystalline silicon tandem solar cell is a four-terminal perovskite-crystalline silicon tandem solar cell.

[0087] Crystalline silicon cells suitable for the present invention include but are not limited to PERC (emitter and back passivation cell), TOPCon (tunneling oxide passivation contact cell), HJT (heterojunction cell), BC (back contact cell), TBC (tunneling silicon oxide / doped polysilicon + full back contact cell), HBC (heterojunction back contact cell), HPBC (composite passivation back contact cell), etc.

[0088] In some embodiments, an adhesive film is disposed between the perovskite solar cell and the crystalline silicon solar cell. Suitable materials for the adhesive film include, but are not limited to, POE (polyolefin elastomer), EVA (ethylene-vinyl acetate copolymer), UV-curable adhesive (epoxy resin), and thermally curable adhesive. In some embodiments, the adhesive film is a POE film.

[0089] Preparation method of perovskite-crystalline silicon tandem solar cell

[0090] The present invention provides a method for preparing a perovskite-crystalline silicon tandem solar cell, which comprises the following steps:

[0091] S1. Laser patterning is performed on the perovskite edge area of ​​the perovskite solar cell. The interference and diffraction properties of light are used to make this area a filter, filtering out the short-wave band similar to the perovskite absorption band (500-1100nm);

[0092] S2. Placing the adhesive film between the perovskite solar cell and the crystalline silicon cell for lamination to obtain a perovskite-crystalline silicon stacked solar cell.

[0093] In the present invention, the preparation of the perovskite solar cell can be as described above.

[0094] In the present invention, the edge cleaning process and the laser patterning process may be as described above.

[0095] In the present invention, an adhesive film is provided to isolate the perovskite solar cell from the crystalline silicon cell, and then a laminating device is used to encapsulate the device to complete the preparation of the battery assembly.

[0096] The present invention will be described below by way of specific examples. It should be understood that these examples are merely illustrative and are not intended to limit the scope of the present invention. The methods, reagents, and materials used in the examples are, unless otherwise stated, conventional methods, reagents, and materials in the art. The starting compounds in the examples can all be purchased from commercial sources.

[0097] Example 1

[0098] (1) A FTO layer (transparent conductive electrode) with a thickness of 600 nm was prepared on a transparent glass substrate by magnetron sputtering.

[0099] (2) Using a nanosecond infrared laser to perform a first laser scribing on the FTO-coated glass. The first laser scribing line is a line that separates the hole transport layer and the transparent conductive electrode at the bottom without damaging the glass substrate. The width of the line is 30 μm and the depth is 500 nm.

[0100] (3) NiOx (hole transport layer) was prepared by sputtering with a thickness of 30 nm;

[0101] (4) Depositing the perovskite light absorbing layer Cs on the NiOx layer by a one-step spin coating method 0.25 FA 0.75 Pb(I 0.8 Br 0.2 )3, band gap is about 1.68eV, thickness is 500nm;

[0102] (5) Preparation of C by thermal evaporation 60layer (first electron transport layer), with a thickness of 20 nm;

[0103] (6) SnO2 (second electron transport layer) was prepared by atomic layer deposition with a thickness of 15 nm;

[0104] (7) Using picosecond green light for the second laser scribing, the second laser scribing line is the scribing line for etching the hole transport layer, the perovskite active layer and the electron transport layer, exposing the transparent conductive electrode layer, so that the top electrode prepared in the next step contacts the transparent conductive electrode layer to form a current path with a width of 70 μm and a depth of 600 nm;

[0105] (8) The ITO top electrode was prepared by magnetron sputtering with a total thickness of 200 nm, and the electrode preparation was completed first;

[0106] (9) Perform a third laser scribing using picosecond green light. The third laser scribing line is the scribing line that separates the metal electrodes of adjacent sub-cells. The third laser scribing line completely removes the top electrode and has a width of 70 μm and a depth of 600 nm.

[0107] (10) Nanosecond infrared laser is used for edge cleaning to remove the hole transport layer, perovskite layer, electron transport layer and top electrode in the non-effective power generation area of ​​the battery to obtain the edge perovskite clear edge area.

[0108] (11) After the edge cleaning treatment, picosecond UV (power 15W, frequency 300Khz, pulse width 10ps) is used to engrave an indirect vertical stripe pattern on the edge perovskite edge cleaning area (the transparent conductive electrode and transparent glass substrate area after edge cleaning).

[0109] The structure of the prepared perovskite solar cell is as follows Figure 1 As shown, 1 is the top electrode, 2 is the second electron transport layer (SnO2 layer), 3 is the first electron transport layer (C 60 layer), 4 is a perovskite light-absorbing layer, 5 is a hole transport layer, 6 is a transparent conductive electrode, 7 is a transparent glass substrate, 10 is an edge perovskite clearing area, P1 is a first laser-scribed line, P2 is a second laser-scribed line, and P3 is a third laser-scribed line. Figure 2 This is the main structural view of the prepared perovskite solar cell.

[0110] (12) The POE film was placed between the perovskite solar cell and the TOPCon crystalline silicon cell prepared above, and lamination was performed at 100°C for 30 minutes to complete the preparation of the perovskite-crystalline silicon stacked solar cell, wherein the area of ​​the crystalline silicon cell was equal to the total area of ​​the perovskite (including the edge perovskite clearing area after laser patterning).

[0111] The structure of the prepared four-terminal perovskite-crystalline silicon tandem solar cell is as follows Figure 3As shown, 1 is the top electrode, 2 is the second electron transport layer (SnO2 layer), 3 is the first electron transport layer (C 60 layer), 4 is a perovskite light-absorbing layer, 5 is a hole transport layer, 6 is a transparent conductive electrode, 7 is a transparent glass substrate, 8 is an adhesive film, and 9 is a crystalline silicon cell.

[0112] Example 2

[0113] The only difference between Example 2 and Example 1 is that nanosecond ultraviolet laser is used for pattern engraving, wherein the processing parameters of the nanosecond ultraviolet laser are power 15W, frequency 300Khz, and pulse width 10ns. Other operating conditions and steps are the same as those of Example 1.

[0114] Comparative Example 1

[0115] The only difference between Comparative Example 1 and Example 1 is that the laser patterning process is not performed on the edge perovskite clearing area. The other operating conditions and steps are the same as those in Example 1, except that the area of ​​the crystalline silicon cell is equal to the area of ​​the perovskite active area.

[0116] Test Example 1

[0117] The light transmittance of the perovskite light absorption layer region and the edge perovskite clear edge region after laser patterning treatment in Example 1 was tested using an ultraviolet-visible spectrophotometer. The testing process was as follows: the perovskite light absorption layer region prepared in the preparation process of Example 1 was first tested, and then the preparation in step (8) was performed; and the light transmittance of the edge perovskite clear edge region after laser patterning treatment was first tested, and then the preparation in step (12) was performed.

[0118] Transmittance T% = I t / I0, where I t is the transmitted light intensity, and I0 is the incident light intensity.

[0119] The measured results are as follows Figure 4 As shown. Figure 4 It can be seen that the light transmittance of the edge perovskite clear edge area and the perovskite light absorption layer area after laser patterning is consistent; the light transmittance difference in the wavelength range of 500-700nm and the wavelength range of 800-1100nm is less than 10%; the light transmittance difference in the wavelength range of 700-800nm ​​is ≤30%.

[0120] Test Example 2

[0121] The cell power of the perovskite-crystalline silicon tandem solar cells of Example 1, Example 2 and Comparative Example 1 was tested.

[0122] The test light intensity is AM1.5G standard light intensity, and the test temperature is 25±1°C. The crystalline silicon cell and the perovskite solar cell are tested separately, and the total power is the sum of the top cell perovskite solar cell power and the bottom cell crystalline silicon cell power.

[0123] The maximum output power of the crystalline silicon solar cell in Comparative Example 1 was measured to be 7.50 W, and the power of the perovskite solar cell was 10.30 W. The total maximum output power of the stacked cells was 17.80 W.

[0124] The maximum output power of the crystalline silicon cell in Example 1 was measured to be 8 W, and the power of the perovskite solar cell remained unchanged at 10.30 W. Compared with Comparative Example 1, the total maximum output power of the tandem cell in Example 1 increased by 0.5 W.

[0125] The maximum output power of the crystalline silicon cell in Example 2 was measured to be 7.95 W, and the power of the perovskite solar cell remained unchanged at 10.30 W. Compared with Comparative Example 1, the total maximum output power of the tandem cell in Example 3 increased to 0.45 W.

Claims

1. A perovskite solar cell, characterized in that The edge perovskite clear edge region of the perovskite solar cell contains a pattern processed by laser patterning, so that the edge perovskite clear edge region becomes a filter to filter short wavelengths of 500-1100 nm.

2. The perovskite solar cell according to claim 1, wherein The difference in light transmittance between the edge perovskite clear edge region and the perovskite light absorption layer region after the laser patterning process is within 30%.

3. The perovskite solar cell according to claim 2, wherein The difference in light transmittance between the laser patterned edge perovskite clear edge region and the perovskite light absorption layer region within the wavelength range of 500-700nm and the wavelength range of 800-1100nm is less than 10%; and / or, The difference in light transmittance between the edge perovskite clear edge region after laser patterning and the perovskite light absorption layer region within a wavelength range of 700-800 nm is ≤30%.

4. The perovskite solar cell according to claim 1, wherein The edge perovskite cleared edge area is the transparent conductive electrode and transparent glass substrate area after the edge is cleared.

5. The perovskite solar cell according to claim 1, wherein The perovskite solar cell includes a transparent glass substrate, a transparent conductive electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a top electrode which are arranged in sequence.

6. A method for preparing a perovskite solar cell according to any one of claims 1 to 5, characterized in that: The method includes the step of performing laser patterning on the edge perovskite clear edge area of ​​the perovskite solar cell. The laser patterning utilizes the interference and diffraction characteristics of light to make the area become a filter to filter short wavelengths of 500-1100 nm.

7. The method according to claim 6, wherein In the laser patterning process, the laser wavelength is 300-400nm, the frequency is 250-350kHz, and the power is 20-50W.

8. The method according to claim 6 or 7, wherein: Laser patterning is performed using one or more of picosecond ultraviolet, femtosecond ultraviolet and nanosecond ultraviolet.

9. The method according to claim 8, wherein The laser light source for the laser patterning process is picosecond ultraviolet, with a laser wavelength of 300-400nm, a pulse width of 8-12ps, a frequency of 250-350kHz, and an energy density of 0.2-0.8J / cm 2 , spot size is 15-25μm, line width is 20-30μm, heat affected zone is <5μm; Alternatively, nanosecond ultraviolet laser treatment is used with a laser wavelength of 300-400 nm, a pulse width of 1-500 ns, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , spot size is 15-25μm, line width is 30-80μm, heat affected zone is <50μm; Alternatively, femtosecond ultraviolet laser treatment is used with a laser wavelength of 300-400 nm, a pulse width of 800 fs-5 ps, a frequency of 250-350 kHz, and an energy density of 0.2-0.8 J / cm 2 , spot size is 15-25μm, line width is 30-80μm, and heat affected zone is <50μm.

10. A perovskite-crystalline silicon tandem solar cell, comprising a crystalline silicon cell and the perovskite solar cell according to any one of claims 1 to 5.

11. The perovskite-crystalline silicon tandem solar cell according to claim 10, wherein: The battery has one or more of the following characteristics: The crystalline silicon cell is selected from one or more of PERC, TOPCon, HJT, BC, TBC, HBC and HPBC; The area of ​​the crystalline silicon cell is equal to the total area of ​​the perovskite solar cell; the total area of ​​the perovskite solar cell includes the area of ​​the active area of ​​the perovskite solar cell and the area of ​​the edge perovskite cleared area after laser patterning; and The perovskite-crystalline silicon tandem solar cell is a four-terminal perovskite-crystalline silicon tandem solar cell.

12. A method for preparing a perovskite-crystalline silicon tandem solar cell, characterized in that: It includes the following steps: S1. Performing laser patterning on the edge of the perovskite solar cell in the clear edge area of ​​the perovskite solar cell. The laser patterning utilizes the interference and diffraction properties of light to make this area a filter to filter short wavelengths of 500-1100 nm. S2. Placing the adhesive film between the perovskite solar cell and the crystalline silicon cell for lamination to obtain a perovskite-crystalline silicon stacked solar cell.

13. The method according to claim 12, wherein: The laser patterning process is as described in any one of claims 6 to 9.

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