Display panel, control method thereof and display device

Abstract

The invention discloses a display panel, a control method thereof and a display device. The display panel includes: a driving back plate; the light emitting and spectrum sensing integrated layer is arranged on one side of the driving backboard and comprises a plurality of sub-pixels and a plurality of spectrum sensors, and the plurality of spectrum sensors and the plurality of sub-pixels are arranged in a one-to-one correspondence mode; the sub-pixels are micro light-emitting diodes; a groove is formed in the surface, away from the driving back plate, of each sub-pixel, and the depth of the groove is smaller than the thickness of the sub-pixel; the spectrum sensor is arranged in the groove, and the spectrum sensor is a gallium nitride-based miniature spectrum sensor; the optical gap layer is arranged on the surface, far away from the driving back plate, of the light-emitting and spectrum-sensing integrated layer, and the optical gap layer is a light-transmitting layer; the micro lens layer is arranged on the side, away from the driving backboard, of the optical gap layer and comprises a plurality of micro lenses, and the micro lenses and the sub-pixels are arranged in a one-to-one correspondence mode. Through the arrangement, the problem that the brightness and the chromaticity of the Micro LED display panel are not uniform after a large amount of Micro LEDs are transferred can be conveniently solved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a control method thereof, and a display device. Background Art

[0002] Micro LED (micro light-emitting diode) display panels are prone to uneven brightness and color after the Micro LED mass transfer process, and spots are prone to appear when displaying pure color images.

[0003] Related technologies typically use offline optical inspection, integrated photodiodes, or algorithm-driven compensation to compensate for the color or brightness of display panels. However, offline optical inspection and compensation struggle to meet production line cycle requirements, as external optical systems struggle to precisely align micron-level pixels, leading to significant inspection errors. Integrated photodiodes can easily reduce the pixel aperture ratio of display panels, leading to a loss in peak brightness. Even after compensation, uneven perception persists. Algorithm-driven compensation is ineffective against color shifts caused by wavelength differences and struggles to address optical crosstalk between adjacent pixels. Summary of the Invention

[0004] This application mainly provides a display panel and its control method, and a display device to solve the problem of uneven brightness and color in Micro LED display panels after mass transfer of Micro LEDs.

[0005] To solve the above technical problems, a technical solution adopted in this application is to provide a display panel, comprising: Driver backplane; A light-emitting and spectral sensing integrated layer is disposed on one side of the driving backplane and includes a plurality of sub-pixels and a plurality of spectral sensors, wherein the plurality of spectral sensors are disposed in a one-to-one correspondence with the plurality of sub-pixels; the sub-pixels are micro-light-emitting diodes; a groove is disposed on a surface of each sub-pixel away from the driving backplane, wherein the depth of the groove is less than the thickness of the sub-pixel; the spectral sensor is disposed in the groove and is a gallium nitride-based micro-spectral sensor; An optical gap layer is provided on a surface of the light emitting and spectrum sensing integrated layer away from the driving backplane; the optical gap layer is a light-transmitting layer; The microlens layer is arranged on a side of the optical gap layer away from the driving backplane, and includes a plurality of microlenses. The plurality of microlenses are arranged in a one-to-one correspondence with the plurality of sub-pixels.

[0006] In some embodiments, the subpixel includes a first n-type gallium nitride layer, an InGaN / GaN quantum well layer, and a first p-type gallium nitride layer stacked in sequence; the spectral sensor includes a light absorption layer and an electrode contact layer, the electrode contact layer includes a second n-type gallium nitride layer and a second p-type gallium nitride layer spaced apart, the light absorption layer is located between the second n-type gallium nitride layer and the second p-type gallium nitride layer, and the light absorption layer has an InGaN / GaN multi-quantum well structure; The groove is arranged close to the edge of the sub-pixel.

[0007] In some embodiments, the area of ​​the spectral sensor accounts for 0.5%-4.5% of the area of ​​the sub-pixel.

[0008] In some embodiments, the ratio of the diameter of the microlens to the diameter of the sub-pixel is greater than or equal to 0.1 and less than or equal to 0.3; the microlens is arranged corresponding to the center position of the sub-pixel; and / or, the refractive index of the microlens is n, n=1.53±0.02; and / or, the light transmittance of the microlens is greater than 99%; And / or, the material of the microlens is UV curable resin; And / or, the material of the optical gap layer is silicon nitride; and / or, the optical gap layer has a thickness of 4.9 μm to 5.1 μm; And / or, the roughness of the surface of the optical gap layer away from the driving backplate is less than 0.5 nanometers.

[0009] To solve the above technical problems, another technical solution adopted by the present application is to provide a display device comprising a control circuit and any of the display panels described above; wherein the control circuit comprises: A data acquisition module, configured to acquire in real time the spectral power distribution S(λ, x, y) and radiance value L(x, y) of a plurality of sub-pixels; wherein λ is the wavelength of the sub-pixel, λ being in the range of 380 nm to 780 nm, and (x, y) being the spatial coordinates of the sub-pixel; A data processing module, comprising a multi-dimensional compensation value generation module; the multi-dimensional compensation value generation module is used to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel based on the spectral power distribution S (λ, x, y) and the radiance value L (x, y), and respectively calculate the brightness compensation current component and the chromaticity compensation current component to generate a compensation current; The driving module includes a digital-to-analog converter, a pulse width modulation controller and a switching transistor; the digital-to-analog converter is used to convert the digital signal of the compensation current into an analog voltage signal and input it into the pulse width modulation controller, and the pulse width modulation controller is used to convert the analog voltage signal into a pulse signal; the pulse signal is used to control the on-off state of the switching transistor, regulate the pixel current of the sub-pixel, and output the first frame display image.

[0010] In some embodiments, the display panel further includes a temperature sensor, which is disposed on the driving backplane and is used to collect the temperature value of the display panel; the temperature sensor is a four-channel temperature sensor; The data processing module further includes a temperature drift correction module; the temperature drift correction module is configured to calculate and correct the compensation current based on the acquired temperature value of the display panel, the brightness compensation current component, and the chromaticity compensation current component; The driving module further includes a level shifter, which is used to receive the pulse signal, convert the level of the pulse signal, and output the converted level to the switching transistor.

[0011] In some embodiments, the calculation formula of the CIE 1976 uniform chromaticity scale color coordinates is: ; ; in: ; ; ; in, is the main wavelength offset, =5nm; The calculation formula of the brightness compensation current component is: ; Where γ is the gamma coefficient, γ=2.2; L target is the brightness target value, L target =1000 nits; L max is the maximum brightness of the display panel, L max =1200 nits; K1 is the gain coefficient, K1=0.15 amps; The chromaticity compensation current component is: ; Where, K2=0.08 ampere; ; Among them, the reference color coordinates are ( , ), ( , ) is (0.198, 0.468); ; in, is the dominant wavelength of the pixel; the value of V(λ) follows the CIE standard; is the chromatic aberration sensitivity adjustment factor, when λ>570nm, =1.3; at λ<500 nm, =1.0; when 500 nm ≤ λ ≤ 570 nm, =1.1; The calculation formula for correcting the compensation current is: ; Among them, T ref is the reference temperature, T ref =25°C; T is the temperature value of the display panel obtained; I default is the default drive current, I default =10 mA; is the efficiency temperature coefficient of the sub-pixel, =-0.003 / Kelvin; The duty cycle of the pulse signal is: ; Among them, I max is the maximum allowable current, I max =20 mA; the frequency of the pulse signal is 4 kHz.

[0012] To solve the above technical problems, another technical solution adopted by the present application is to provide a method for controlling a display panel, which is applicable to any of the above-mentioned display panels; comprising: During a first time period, optically scan the plurality of sub-pixels of the display panel to obtain, in real time, spectral power distributions S(λ, x, y) and radiant brightness values ​​L(x, y) of the plurality of sub-pixels, and obtain, in real time, a temperature value of the display panel; wherein the first time period is from 0 milliseconds to 20 milliseconds; λ is the wavelength of the sub-pixel, which is in the range of 380 nanometers to 780 nanometers; and (x, y) is the spatial coordinate of the sub-pixel; In a second time period, a brightness compensation current component and a chromaticity compensation current component are calculated in parallel based on the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y), and a corrected compensation current is calculated based on the obtained temperature value of the display panel; wherein the second time period is from 21 milliseconds to 50 milliseconds; During the third time period, the data of the compensation current is obtained, the digital signal of the compensation current is converted into a pulse signal, and the on-off state of the switching transistor is controlled to regulate the pixel current of the plurality of sub-pixels, and output the first frame display image; wherein, the third time period is 51 milliseconds to 100 milliseconds.

[0013] In some embodiments, further comprising: After outputting the first frame display image, within each preset time period, the pixel current of the sub-pixel whose refresh change of the display panel is greater than a preset threshold is re-calibrated; wherein the preset time period is in the range of 50 seconds to 70 seconds, and the preset threshold is in the range of 1.5% to 2.5%.

[0014] In some embodiments, the first time period includes adjacent first and second sub-time periods; The step of optically scanning the plurality of sub-pixels of the display panel within the first time period, acquiring the spectral power distribution S(λ, x, y) and the radiant brightness value L(x, y) of the plurality of sub-pixels in real time, and acquiring the temperature value of the display panel in real time includes: During the first sub-period, the spectral power distribution S(λ, x, y) and the radiance value L(x, y) of the plurality of sub-pixels of the display panel are captured at a preset rate; wherein the preset rate is in a range of 950 frames per second to 1050 frames per second; and the first sub-period is 0 milliseconds to 18 milliseconds; In the second sub-time period, the temperature value of the display panel is acquired in real time; wherein the second sub-time period is from 19 milliseconds to 20 milliseconds; and / or, the second time period includes adjacent third sub-time period and fourth sub-time period; The step of calculating, in parallel, a brightness compensation current component and a chromaticity compensation current component according to the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y) during the second time period, and calculating a corrected compensation current according to the obtained temperature value of the display panel includes: In the third sub-time period, a brightness compensation current component and a chromaticity compensation current component are calculated in parallel based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y); wherein the third sub-time period is from 21 milliseconds to 45 milliseconds; In the fourth sub-time period, the compensation current is calculated and corrected according to the acquired temperature value of the display panel, the brightness compensation current component, and the chromaticity compensation current component; wherein the fourth sub-time period is 46 milliseconds to 50 milliseconds.

[0015] The beneficial effects of the present application are as follows: Different from the prior art, the present application discloses a display panel, a control method thereof, and a display device. The display panel includes: a driving backplane; a light-emitting and spectral sensing collection layer, which is arranged on one side of the driving backplane and includes a plurality of sub-pixels and a plurality of spectral sensors, and the plurality of spectral sensors are arranged in a one-to-one correspondence with the plurality of sub-pixels; the sub-pixels are micro-light-emitting diodes; a groove is provided on the surface of each sub-pixel away from the driving backplane, the depth of the groove is less than the thickness of the sub-pixel, the spectral sensor is arranged in the groove, and the spectral sensor is a gallium nitride-based micro-spectral sensor; an optical gap layer, which is provided on the surface of the light-emitting and spectral sensing collection layer away from the driving backplane, and is a light-transmitting layer; a microlens layer, which is provided on the side of the optical gap layer away from the driving backplane and includes a plurality of microlenses, and the plurality of microlenses are arranged in a one-to-one correspondence with the plurality of sub-pixels. Through the above arrangement, grooves are directly provided on the surface of the sub-pixel, and the spectral sensor is integrated into the groove of the sub-pixel. The spectral sensor is a gallium nitride-based micro spectral sensor, which can be prepared using the same process as the sub-pixel. The spectral sensor has little impact on the pixel aperture ratio, and the microlens size can accurately match the sub-pixel, which can achieve nano-level in-situ monitoring of the luminescence characteristics of each sub-pixel, making it easier to solve the problem of uneven brightness and color of the Micro LED display panel after the mass transfer of Micro LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. Those skilled in the art can also derive other drawings based on these drawings without inventive work, among which: Figure 1 is a cross-sectional schematic diagram of an implementation manner of a display panel provided in the first embodiment of the present application; Figure 2 yes Figure 1 A schematic diagram of the top view structure of the light emitting and spectral sensing integrated layer of the provided display panel; Figure 3 yes Figure 1 A schematic cross-sectional view of a sub-pixel and a spectral sensor of a provided display panel; Figure 4 is a structural diagram of an implementation of a display device provided in the second embodiment of the present application; Figure 5 1 is a flow chart of an implementation method of a display panel control method provided in the third embodiment of the present application; Figure 6 yes Figure 5 A flowchart of step S1 of a display panel control method is provided; Figure 7 yes Figure 5 A flowchart of step S2 of an embodiment of a method for controlling a display panel is provided.

[0017] Figure Number: 300, display device; 200, control circuit; 201, data acquisition module; 202, data processing module; 2021, multi-dimensional compensation value generation module; 2022, temperature drift correction module; 203, driver module; 2031, digital-to-analog converter; 2032, pulse width modulation controller; 2033, switching transistor; 2034, level shifter; 100, display panel; 1, driver backplane; 11, substrate; 12, driver circuit Layer; 2. Luminescence and spectral sensing collection layer; 21. Sub-pixel; 211. First n-type gallium nitride layer; 212. InGaN / GaN quantum well layer; 213. First p-type gallium nitride layer; 22. Spectral sensor; 221. Second n-type gallium nitride layer; 222. Light absorption layer; 223. Second p-type gallium nitride layer; 224. Electrode contact layer; 23. Groove; 3. Optical gap layer; 4. Microlens layer; 41. Microlens; 5. Temperature sensor. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0019] The terms "first", "second" and "third" in the embodiments of the present application are only used for descriptive purposes and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second" and "third" may explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally also include steps or units that are not listed, or may optionally also include other steps or units inherent to these processes, methods, products or devices.

[0020] References to "embodiments" herein mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0021] See Figures 1 to 3 , Figure 1 is a cross-sectional schematic diagram of an implementation of a display panel provided in the first embodiment of the present application, Figure 2 yes Figure 1 A schematic diagram of the top view structure of the light emitting and spectrum sensing integrated layer of the display panel is provided. Figure 3 yes Figure 1 A cross-sectional schematic diagram of a sub-pixel and a spectral sensor of a display panel is provided.

[0022] See also Figures 1 to 3 The first embodiment of the present application provides a display panel 100, which includes a driving backplane 1, a light-emitting and spectrum sensing integration layer 2, an optical gap layer 3 and a microlens layer 4 stacked in sequence.

[0023] Among them, the luminescence and spectrum perception integrated layer 2 is arranged on one side of the driving backplane 1. Specifically, the driving backplane 1 includes a substrate 11 and a driving circuit layer 12 arranged on one surface of the substrate 11. The luminescence and spectrum perception integrated layer 2 is arranged on the side of the driving circuit layer 12 away from the substrate 11.

[0024] The luminescence and spectral sensing integrated layer 2 includes multiple sub-pixels 21 and multiple spectral sensors 22. The multiple spectral sensors 22 are arranged in a one-to-one correspondence with the multiple sub-pixels 21. Specifically, a groove 23 is provided on the surface of each sub-pixel 21 away from the driving backplane 1. The depth of the groove 23 is less than the thickness of the sub-pixel 21. The multiple spectral sensors 22 are arranged in a one-to-one correspondence within the groove 23 of the multiple sub-pixels 21. In some embodiments, the spectral sensors 22 are gallium nitride-based micro spectral sensors.

[0025] In some embodiments, the sub-pixels 21 are micro-light-emitting diodes (Micro LEDs), and each of three adjacent sub-pixels 21 has a different color, namely a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The electrodes (not shown) of the sub-pixels 21 are electrically connected to the driver circuit layer 12 of the driver backplane 1 , so that the driver circuit layer 12 drives the sub-pixels 21 to emit light, thereby realizing the image display function.

[0026] The optical gap layer 3 is disposed on the surface of the luminescent and spectral sensing integrated layer 2 facing away from the driver backplane 1. The optical gap layer 3 is a light-transmitting layer. The microlens layer 4 is disposed on the side of the optical gap layer 3 facing away from the driver backplane 1. In some embodiments, the surface of the optical gap layer 3 facing away from the driver backplane 1 is planar, and the microlens layer 4 is disposed on the surface of the optical gap layer 3 facing away from the driver backplane 1. The microlens layer 4 includes a plurality of microlenses 41, which are arranged in a one-to-one correspondence with the plurality of sub-pixels 21. Specifically, the microlenses 41 can be spherical, with the convex surface of the microlenses 41 facing away from the driver backplane 1. The microlens layer 4 can convert the Lambertian divergent light field of the MicroLED (e.g., a 120° divergence angle) into a directional light beam.

[0027] It can be understood that through the above setting, a groove 23 is directly set on the surface of the sub-pixel 21, and the spectral sensor 22 is integrated in the groove 23 of the sub-pixel 21. The spectral sensor 22 is a gallium nitride-based micro spectral sensor. The spectral sensor 22 can be prepared using the same process as the sub-pixel 21. The spectral sensor 22 has a very small impact on the pixel aperture ratio, and the size of the microlens 41 can accurately match the sub-pixel 21, which can realize nano-level in-situ monitoring of the luminescence characteristics of each sub-pixel 21, which is convenient for solving the problem of uneven brightness and chromaticity of the Micro LED display panel 100 after the mass transfer of Micro LED.

[0028] In some embodiments, the sub-pixel 21 is a micro-light emitting diode, such as Figure 3 As shown, the sub-pixel 21 includes a first n-type gallium nitride layer 211, an InGaN / GaN quantum well layer 212, and a first p-type gallium nitride layer 213 stacked in sequence. Specifically, the thickness of the first n-type gallium nitride layer 211 can be in the range of 2.95 microns to 3.05 microns, and the Si doping concentration of the first n-type gallium nitride layer 211 is 5*10 18 cm -3 The InGaN / GaN quantum well layer 212 is a multi-quantum well structure. For example, the InGaN / GaN quantum well layer 212 may include twelve periods of InGaN grown alternately. 0.15 Ga 0.85 N / GaN quantum well structure, wherein the thickness of the potential well layer can be in the range of 2.4 nm to 2.6 nm, and the thickness of the barrier layer can be in the range of 9.5 nm to 10.5 nm. The thickness of the first p-type gallium nitride layer 213 can be in the range of 0.19 μm to 0.21 μm, and the Mg doping concentration of the first p-type gallium nitride layer 213 is 1*10 20 cm -3 .

[0029] In some embodiments, the groove 23 is arranged near the edge of the sub-pixel 21, and the spectral sensor 22 is arranged in the groove 23, which can more effectively avoid the influence of the spectral sensor 22 on the pixel aperture ratio of the sub-pixel 21 and ensure the luminous efficiency of the sub-pixel 21.

[0030] In some embodiments, the spectral sensor 22 includes a light absorption layer 222 and an electrode contact layer 224. The electrode contact layer 224 includes a second n-type gallium nitride layer 221 and a second p-type gallium nitride layer 223 spaced apart from each other. The light absorption layer 222 is located between the second n-type gallium nitride layer 221 and the second p-type gallium nitride layer 223. The second n-type gallium nitride layer 221 is located on the side of the light absorption layer 222 closer to the driver backplane 1. The light absorption layer 222 has an InGaN / GaN multi-quantum well structure, and the spectral sensor 22 is a PIN-type spectral sensor. The second n-type gallium nitride layer 221, the light absorption layer 222, and the second p-type gallium nitride layer 223 of the spectral sensor 22 can be fabricated using the same process within the same MOCVD (metal organic chemical vapor deposition) reaction chamber as the first n-type gallium nitride layer 211, the InGaN / GaN quantum well layer 212, and the first p-type gallium nitride layer 213 of the sub-pixel 21. By setting the spectral sensor 22 to the above setting, the influence of the spectral sensor 22 on the aperture ratio of the sub-pixel 21 can be more effectively avoided, thereby improving the display performance of the display panel 100. It is also easier to use the spectral sensor 22 to detect the spectral information of the sub-pixel 21, thereby making it easier to solve the problem of uneven brightness and color of the Micro LED display panel 100.

[0031] The response range of the spectral sensor 22 covers the visible light band from 380nm to 780nm. The resolution of the spectral sensor 22 reaches 5 nanometers, which can accurately analyze the main wavelength offset of the light and the color coordinate deviation of the sub-pixel 21. Specifically, the spectral sensor 22 can accurately analyze the main wavelength offset to ±0.8 nanometers and the color coordinate deviation of the sub-pixel 21 to ±0.001.

[0032] In some embodiments, the depth of the groove 23 disposed on the surface of the sub-pixel 21 away from the driving backplane 1 is in a range of 0.29 micrometers to 0.31 micrometers, thereby making it easier to form the spectral sensor 22 in the groove 23 .

[0033] In some embodiments, the thickness of the second n-type gallium nitride layer 221 of the spectral sensor 22 is 18 nanometers to 22 nanometers. The second n-type gallium nitride layer 221 is a heavily doped n-type gallium nitride semiconductor layer. Specifically, the Si doping concentration of the second n-type gallium nitride layer 221 is 5*10 18 cm -3 The light absorbing layer 222 may be In 0.3 Ga 0.7N multi-quantum well structure, the thickness of the light absorption layer 222 can be set to be in the range of 190 nanometers to 210 nanometers. The thickness of the second p-type gallium nitride layer 223 is 18 nanometers to 22 nanometers. The second p-type gallium nitride layer 223 is a heavily doped p-type gallium nitride semiconductor layer. Specifically, the Mg doping concentration of the second p-type gallium nitride layer 223 is 3*10 19 cm -3 .

[0034] In some embodiments, optical gap layer 3 is made of silicon nitride (Si3N4) and / or has a thickness of 4.9 to 5.1 microns. In one specific embodiment, optical gap layer 3 has a thickness of 5.0 microns. When optical gap layer 3 is made of silicon nitride and has a thickness within the aforementioned range, both structural stability and optical performance are achieved.

[0035] In some embodiments, the roughness of the surface of the optical gap layer 3 away from the driving backplane 1 is less than 0.5 nanometers, so that the surface of the optical gap layer 3 away from the driving backplane 1 is a relatively flat plane, which is beneficial to ensuring the processing accuracy of the microlens 41 arranged on the surface of the optical gap layer 3 away from the driving backplane 1, and is more beneficial to solving the problem of uneven brightness and chromaticity of the Micro LED display panel 100, thereby facilitating improving the display effect of the display panel 100.

[0036] In some embodiments, the material of microlens 41 is a UV-curable resin, and / or the refractive index of microlens 41 is n, where n=1.53±0.02, and / or the transmittance of microlens 41 is greater than 99%. Microlens 41 can be made of a high-transmittance UV-curable resin and formed using a nanoimprint process on the surface of optical gap layer 3 away from the driving backplane 1. Setting the transmittance and refractive index of microlens 41 within the above ranges can ensure that microlens 41 has good optical performance and ensures the utilization of light emitted by sub-pixels 21.

[0037] In some embodiments, the area of ​​the spectral sensor 22 accounts for 0.5%-4.5% of the area of ​​the sub-pixel 21. For example, the sub-pixel 21 may have a length of 20 microns and a width of 10 microns, while the spectral sensor 22 may have a length and width of 1 micron. The spectral sensor 22 is positioned close to the edge of the sub-pixel 21 to more effectively prevent the spectral sensor 22 from affecting the pixel aperture ratio of the sub-pixel 21.

[0038] In other embodiments, the specific sizes of the spectral sensor 22 and the sub-pixel 21 can be designed as needed, as long as the area of ​​the spectral sensor 22 occupies 0.5%-4.5% of the area of ​​the sub-pixel 21, thereby reducing the impact of the spectral sensor 22 on the pixel aperture ratio.

[0039] In some embodiments, the ratio between the diameter of the microlens 41 and the diameter of the sub-pixel 21 is greater than or equal to 0.1 and less than or equal to 0.3, and the microlens 41 is disposed corresponding to the center position of the sub-pixel 21. It will be appreciated that by setting the diameter of the microlens 41 and the diameter of the sub-pixel 21 within the above range, it is possible to achieve both light collection efficiency and crosstalk suppression. Specifically, the light collection efficiency of the microlens 41 can reach greater than 85%, and the crosstalk suppression ratio can reach less than -30 dB. This allows the microlens 41 to better convert the light from the sub-pixel 21, converting the Lambertian divergent light field of the sub-pixel 21 into a directional light beam, effectively resolving the optical path crosstalk problem between adjacent sub-pixels 21, and significantly improving the detection signal-to-noise ratio, thereby further improving the display effect of the display panel 100. In one specific embodiment, the ratio between the diameter of the microlens 41 and the diameter of the sub-pixel 21 is 0.2. For example, the diameter of the sub-pixel 21 is 20 microns and the diameter of the microlens 41 is 4 microns. This can achieve the best focusing efficiency and crosstalk suppression ratio, thereby more effectively improving the focusing and crosstalk suppression effects of the microlens 41.

[0040] In some embodiments, the luminescence and spectral perception collection layer 2 and the optical gap layer 3 of the display panel 100 are synchronously transferred to the driving backplane 1 of the display panel 100 through the same mass transfer process. Specifically, after the luminescence and spectral perception collection layer 2 and the optical gap layer 3 are prepared on the sapphire substrate, the mass transfer process is used to transfer the multiple sub-pixels 21 and the corresponding spectral sensors 22 of the luminescence and spectral perception collection layer 2 and the corresponding optical gap layer 3 to the side of the driving circuit layer 12 of the driving backplane 1 away from the substrate 11, and then the microlens layer 4 is prepared on the side of the transferred optical gap layer 3 away from the driving backplane 1.

[0041] In some embodiments, a sapphire substrate is used to sequentially construct a Micro LED epitaxial layer, a spectral sensor 22, and an optical gap layer 3 through metal organic chemical vapor deposition (MOCVD) and plasma enhanced chemical vapor deposition (PECVD).

[0042] In one specific embodiment, first, a Micro LED epitaxial layer is grown on a sapphire substrate. Specifically, the sapphire substrate is placed in a MOCVD equipment reaction chamber. 50 standard milliliters per minute (sccm) of trimethyl gallium (TMGa) as a gallium source, 200 sccm of ammonia (NH3) as a nitrogen source, and 5 sccm of silane (SiH4) as an n-type dopant are introduced at a constant temperature of 1050°C. The reaction chamber pressure is controlled at 300 mbar. First, a first n-type gallium nitride layer 211 with a thickness of 3.0 microns is grown. The Si doping concentration of the first n-type gallium nitride layer 211 is 5*10 18 cm -3Then switch to the multi-quantum well growth stage, introduce 10sccm trimethylindium (TMIn) and adjust the temperature to 750℃, alternately grow twelve cycles of In 0.15 Ga 0.85 N / GaN quantum well structure, forming InGaN / GaN quantum well layer 212, wherein the potential well layer thickness is 2.5 nanometers, and the barrier layer thickness is 10 nanometers; finally, a first p-type gallium nitride layer 213 with a thickness of 0.2 microns is grown at 950°C, and the Mg doping concentration of the first p-type gallium nitride layer 213 is 1*10 20 cm -3 , completing the preparation of the Micro LED epitaxial layer.

[0043] Next, the spectral sensor 22 is integrated. Specifically, a photoresist is spin-coated on the surface of the wafer on which the Micro LED epitaxial layer is prepared. For example, the photoresist is AZ 5214E, the thickness of the spin-coated photoresist is 1.2 microns, and a hollow pattern is formed in the area of ​​the preset spectrum sensor 22 through a photolithography process, for example, the length of the hollow pattern is 1 micron and the width is 1 micron; an inductively coupled plasma (ICP) etching system is used to etch and remove the first p-type gallium nitride layer 213 and the InGaN / GaN quantum well layer 212 in the area of ​​the preset spectrum sensor 22 at a pressure of 5 mTorr using a Cl2 / BCl3 mixed gas (the flow ratio of Cl2 to BCl3 is 3:1) to form a groove 23, specifically, the etching depth of the groove 23 is 0.3 microns; then, the photoresist is removed. After removing the photoresist, the wafer is placed in an MOCVD reaction chamber for the second time, and TMIn / TMGa / NH3 (the flow ratio of TMIn, TMGa and NH3 is 1:1:200) is introduced under the conditions of 850°C and 100 mBar, and multiple Micro A plurality of spectral sensors 22 are grown in the grooves 23 of the LED epitaxial layer. Specifically, the structure of the spectral sensors 22 grown in the grooves 23 includes a second n-type gallium nitride layer 221, a light absorbing layer 222, and a second p-type gallium nitride layer 223. For example, the thickness of the second n-type gallium nitride layer 221 is 20 nanometers, and the Si doping concentration of the second n-type gallium nitride layer 221 is 5*10 18 cm -3 ; The light absorbing layer 222 may be In 0.3 Ga 0.7 N multi-quantum well structure, the thickness of the light absorption layer 222 is 200 nanometers; the thickness of the second p-type gallium nitride layer 223 is 20 nanometers, and the Mg doping concentration of the second p-type gallium nitride layer 223 is 3*10 19 cm -3 By growing a plurality of spectral sensors 22 correspondingly in the grooves 23 of the plurality of Micro LED epitaxial layers, a light emitting and spectral sensing integrated layer 2 is formed.

[0044] Next, the optical gap layer 3 is formed. Specifically, a silicon nitride film is deposited on the surface of the luminescent and spectral sensing integrated layer 2 using a PECVD device at 300°C. The reactant gases are silane (SiH4) and ammonia (NH3), with a silane feed rate of 50 sccm and an ammonia feed rate of 200 sccm. The RF power is 350 W and the deposition rate is 60 nm / min, until the deposited silicon nitride film reaches a thickness of 5.0 microns. After the silicon nitride film is deposited, the surface of the optical gap layer 3 away from the Micro LED epitaxial layer is polished using a chemical mechanical polishing (CMP) process. Specifically, Dow Chemical IC1010 polishing liquid is used at a pressure of 3 psi to achieve a surface roughness of less than 0.5 nm on the optical gap layer 3, ensuring the molding accuracy of the microlenses 41 subsequently formed on the surface of the optical gap layer 3.

[0045] After the optical gap layer 3 is prepared, the luminescent and spectral sensing integrated layer 2 and the optical gap layer 3 are simultaneously transferred to the driving circuit layer 12 side of the driving backplane 1 using a mass transfer process, and the Micro LEDs in the luminescent and spectral sensing integrated layer 2 are electrically connected to the driving circuit layer 12. For example, the mass transfer process can be completed using ASM's AMICRA M300 mass transfer equipment, whose robotic arm positioning accuracy is controlled within ±0.8 microns. The transfer process is carried out in a dust-free environment with a cleanliness level of Class 1000. After the transfer, the electrical connection between the Micro LED electrodes and the driving circuit layer 12 is achieved through eutectic welding. Specifically, the welding temperature is 380°C, the pressure is 5 Newtons, and the duration is 15 seconds.

[0046] Next, a microlens layer 4 is prepared on the side of the optical gap layer 3 away from the driving backplane 1. Specifically, a negative UV photoresist is spin-coated on the surface of the optical gap layer 3 away from the driving backplane 1 at a speed of 1500 rpm for 30 seconds to form a photoresist layer with a thickness of 15.0±0.2 microns. The photoresist layer is then soft-baked on a 90°C hot plate for 120 seconds to remove the solvent in the photoresist layer. A nanoimprinting device, specifically an EVG 520, is used to press a prefabricated silicon mold onto the surface of the photoresist layer at a pressure of 0.8 MPa. After maintaining the pressure for 180 seconds, the mold is irradiated with a 365 nm UV lamp (with an energy density of 350 mJ / cm 2 ) irradiation curing. Specifically, a plurality of pits are etched in an array on the surface of the silicon mold. These pits correspond one-to-one with the plurality of sub-pixels 21, and are distributed corresponding to the center positions of the sub-pixels 21. Each pit has a diameter of 4 microns, a radius of curvature of 3.2 microns, and an aspect ratio of 0.45. After demolding, microlenses 41 are formed on the surface of the optical gap layer 3 through a reactive ion etching (RIE) process. Specifically, the etching gas is a CF4 / O2 mixture, and the shape of microlenses 41 is spherical cap.

[0047] In some embodiments, the display panel 100 further includes a temperature sensor 5, which is disposed on the driver backplane 1. The temperature sensor 5 is used to detect and collect the temperature value of the display panel 100 in real time, so as to dynamically track the temperature changes of the display panel 100. This facilitates real-time correction and compensation of the brightness and color of the display panel 100 based on the temperature value of the display panel 100. This is more conducive to solving the problems of uneven brightness and color drift that occur in the Micro LED display panel 100 after mass transfer, avoiding the appearance of mura on the display panel 100, and thus improving the display effect of the display panel 100. In one specific embodiment, the temperature sensor 5 is a four-channel temperature sensor 5. The four-channel temperature sensor 5 can simultaneously measure the temperature of four different locations. The arithmetic average of the multiple temperature values ​​collected by the four-channel temperature sensor 5 can be used as the temperature value of the display panel 100.

[0048] See also Figure 4 , Figure 4 It is a structural diagram of an implementation of a display device provided in the second embodiment of the present application.

[0049] See also Figure 4 The second embodiment of the present application provides a display device 300. Specifically, the display device 300 includes a display panel 100 and a control circuit 200. The display panel 100 can be any display panel 100 as described above. The control circuit 200 is electrically connected to the display panel 100 and is used to control the display panel 100 to realize the light-emitting function and compensate for the brightness and chromaticity of the display panel 100.

[0050] Specifically, the control circuit 200 includes a data acquisition module 201, a data processing module 202, and a driving module 203. The data acquisition module 201 is configured to acquire, in real time, the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels 21 of the display panel 100. Here, λ is the wavelength of the sub-pixel 21, which is within the range of 380 nanometers to 780 nanometers, and (x, y) is the spatial coordinate of the sub-pixel 21.

[0051] In some embodiments, the data processing module 202 includes a multi-dimensional compensation value generation module 2021. The multi-dimensional compensation value generation module 2021 is configured to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel 21 based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y), and to respectively calculate the brightness compensation current component and the chromaticity compensation current component to generate a compensation current to compensate for the brightness and chromaticity of the display panel 100, thereby resolving the problems of uneven brightness and chromaticity drift of the display panel 100.

[0052] In some embodiments, the display panel 100 includes a temperature sensor 5, which is a four-channel temperature sensor 5 that can read multiple temperature values ​​collected by the four-channel temperature sensor 5 and take an arithmetic average as the temperature value of the display panel 100. The data processing module 202 also includes a temperature drift correction module 2022. The temperature drift correction module 2022 is configured to calculate a corrected compensation current based on the acquired temperature value of the display panel 100 and the calculated brightness compensation current component and color compensation current component, so as to correct the compensation current of the display panel 100 in real time according to the temperature change of the display panel 100, thereby reducing the impact of temperature changes on the brightness and color of the display panel 100.

[0053] Specifically, after the data acquisition module 201 obtains the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 of the display panel 100, the spectral power distribution S(λ, x, y) and radiance value L(x, y) are quantized by a 12-bit analog-to-digital converter and transmitted to the data processing module 202. The data processing module 202 first numerically integrates the spectral power distribution S(λ, x, y) data of the sub-pixel 21, performs a convolution operation based on the CIE 1931 standard colorimetric observer function, and calculates the tristimulus values ​​of the CIEXYZ system. Specifically, the tristimulus value calculation formula is: ; ; .

[0054] in, is the main wavelength offset, =5nm.

[0055] Next, the data processing module 202 calculates the CIE 1976 Uniform Chromaticity Scale (UCS) color coordinates of the sub-pixel 21 based on the calculated tristimulus values. Specifically, the calculation formula of the CIE 1976 Uniform Chromaticity Scale color coordinates is: ; .

[0056] After calculating the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel 21, the data processing module 202 calculates the brightness compensation current component and the chromaticity compensation current component, respectively, and calculates the corrected compensation current based on the acquired temperature value of the display panel 100 and the calculated brightness compensation current component and chromaticity compensation current component. Specifically, the calculation formula for the brightness compensation current component is: .

[0057] Wherein, γ is the gamma coefficient. In some embodiments, γ=2.2, L target is the brightness target value, L target =1000 nits; L max is the maximum brightness of the display panel 100, L max =1200 nits; K1 is the gain coefficient, which is determined to be K1=0.15 amperes through previous calibration.

[0058] Specifically, the calculation formula of the chromaticity compensation current component is: .

[0059] Where, K2=0.08 ampere, is the dominant wavelength of the pixel. ΔE is the Euclidean distance between the current color coordinate and the target value, specifically: ; Among them, the reference color coordinates are ( , ), ( , ) is (0.198, 0.468).

[0060] In terms of chromaticity compensation, the physiological characteristics of human vision are innovatively incorporated, and physiological optical weighting is performed using the CIE 1931 photopic spectral luminous efficiency function V (λ), where the weighting function is defined as: .

[0061] Among them, the value of V(λ) follows the CIE standard; is the color difference sensitivity adjustment factor. When λ>570 nanometers (red light band), =1.3; when λ<500 nm (blue light band), =1.0; when 500 nm ≤ λ ≤ 570 nm (green light band), =1.1. It can be understood that by embedding the CIE 1931 photopic spectral luminous efficiency function V(λ), physiological optical level compensation can be achieved, which can solve the problem of uneven human eye perception that still exists after compensation.

[0062] In some embodiments, based on the acquired temperature value of the display panel 100 and the calculated brightness compensation current component and chromaticity compensation current component, the calculation formula for the modified compensation current is: .

[0063] Among them, T ref is the reference temperature, T ref=25°C; T is the acquired temperature value of the display panel 100, I default is the default drive current, I default =10 mA; is the efficiency temperature coefficient of sub-pixel 21, =-0.003 / Kelvin. The temperature sensor 5 collects the temperature of the display panel 100, and the data processing module 202 can dynamically modify the output compensation current based on the temperature change of the display panel 100. Even if the temperature of the display panel 100 fluctuates, it will not affect the brightness and color compensation of the display panel 100, thereby better solving the problem of uneven brightness and color of the display panel 100.

[0064] In some embodiments, the driving module 203 includes a digital-to-analog converter 2031, a pulse width modulation controller 2032, and a switching transistor 2033. The digital-to-analog converter 2031 is used to convert the digital signal of the compensation current into an analog voltage signal and input it to the pulse width modulation controller 2032. The pulse width modulation controller 2032 is used to convert the analog voltage signal into a pulse signal. The pulse signal is used to control the on-off state of the switching transistor 2033. Specifically, the pulse signal can be used to control the degree of opening of the switching transistor 2033, thereby controlling the magnitude of the output compensation current, thereby facilitating the regulation of the pixel current of the sub-pixel 21 to output the first frame of the display image. The switching transistor 2033 can be a MOSFET.

[0065] In some embodiments, the driving module 203 further includes a level shifter 2034 , which is configured to receive the pulse signal generated by the pulse width modulation controller 2032 , convert the level of the pulse signal, and output the converted pulse signal to the switching transistor 2033 .

[0066] Specifically, the drive module 203 uses a hybrid control mode of pulse width modulation (PWM) and current amplitude modulation (AM). The compensation current calculated by the data processing module 202 is a digital signal, which is converted into an analog voltage signal by a 16-bit digital-to-analog converter 2031. The analog voltage signal is input to the pulse width modulation (PWM) controller, which converts the analog voltage signal of the compensation current into a pulse signal with an adjustable duty cycle. Specifically, the duty cycle (δ) of the pulse signal is: .

[0067] Among them, I max is the maximum allowable current, I max= 20 mA; the frequency of the pulse signal is set to 4 kHz. The pulse signal output by the pulse width modulation controller 2032 is converted by the level shifter 2034 and then output to the switching transistor 2033 to drive the switching transistor 2033 to complete the regulation of the pixel current.

[0068] The display device 300 provided in the embodiment of the present application can perform real-time compensation for the chromaticity and brightness of the display panel 100. The display device 300 greatly reduces the loss of pixel aperture rate through in-situ optical perception combined with a visual optimization algorithm, and completes pixel-level correction within milliseconds. It supports uniform display of the first frame of the screen when the power is turned on, significantly improves display uniformity and reduces production costs, and solves the problems of uneven brightness and chromaticity, and the appearance of spots on the display panel 100 in related technologies.

[0069] See Figures 5 to 7 , Figure 5 1 is a flow chart of an implementation method of a display panel control method provided in the third embodiment of the present application. Figure 6 yes Figure 5 A flow chart of step S1 of an embodiment of a method for controlling a display panel is provided. Figure 7 yes Figure 5 A flowchart of step S2 of an embodiment of a method for controlling a display panel is provided.

[0070] See also Figure 5 The third embodiment of the present application provides a method for controlling a display panel 100. Specifically, the method for controlling the display panel 100 includes: S1: In a first time period, optically scan the multiple sub-pixels 21 of the display panel 100 to obtain the spectral power distribution S (λ, x, y) and radiant brightness value L (x, y) of the multiple sub-pixels 21 in real time, and obtain the temperature value of the display panel 100 in real time.

[0071] Specifically, within a first time period, the multiple sub-pixels 21 of the display panel 100 are optically scanned, and the spectral power distribution S (λ, x, y) and the radiation brightness value L (x, y) of the multiple sub-pixels 21 are obtained in real time, wherein the first time period is 0 milliseconds to 20 milliseconds, λ is the wavelength of the sub-pixel 21, λ is in the range of 380 nanometers to 780 nanometers, and (x, y) is the spatial coordinate of the sub-pixel 21.

[0072] At the same time, during this time period, the temperature value of the display panel 100 detected by the temperature sensor 5 is acquired in real time. In one specific embodiment, the temperature sensor 5 is a four-channel temperature sensor 5 that can acquire multiple temperature values. The arithmetic average of the multiple temperature values ​​acquired by the four-channel temperature sensor 5 can be taken as the temperature value of the display panel 100. That is, the first time period is the optical scanning phase, during which the multiple sub-pixels 21 of the display panel 100 are optically scanned immediately after the display panel 100 is powered on.

[0073] In some embodiments, during the first time period, data can be preprocessed based on the acquired spectral power distribution S(λ, x, y) and radiance value L(x, y) of the plurality of sub-pixels 21 to complete the calculation of the tristimulus values ​​of the CIE XYZ system and the conversion of the 1976 Uniform Chromaticity Scale (UCS) color coordinates, thereby obtaining the CIE 1976 Uniform Chromaticity Scale color coordinates of the sub-pixel 21.

[0074] Specifically, in some embodiments, the first time period includes adjacent first and second sub-time periods. The steps of optically scanning the plurality of sub-pixels 21 of the display panel 100 within the first time period, acquiring the spectral power distribution S(λ, x, y) and radiance values ​​L(x, y) of the plurality of sub-pixels 21 in real time, and acquiring the temperature value of the display panel 100 in real time in step S1 include: S11 : within a first sub-period, capturing the spectral power distribution S (λ, x, y) and the radiance value L (x, y) of the plurality of sub-pixels 21 of the display panel 100 at a preset rate.

[0075] Specifically, during a first sub-period, the spectral power distribution S(λ, x, y) and the radiance values ​​L(x, y) of the plurality of sub-pixels 21 of the display panel 100 are captured at a preset rate. The first sub-period is from 0 milliseconds to 18 milliseconds, and the preset rate is in a range from 950 frames per second to 1050 frames per second. In one specific embodiment, the preset rate is 1000 frames per second.

[0076] S12: In the second sub-time period, the temperature value of the display panel 100 is acquired in real time.

[0077] Specifically, during the second sub-period, the temperature value of the display panel 100 collected by the temperature sensor 5 is acquired in real time. The second sub-period is from 19 milliseconds to 20 milliseconds, and the temperature value of the display panel 100 is read 2 milliseconds before the end of the optical scanning phase. The acquisition of the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels 21 is performed in a time-sharing manner with the acquisition of the temperature value of the display panel 100, thereby reducing energy consumption.

[0078] S2: In the second time period, based on the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y), the brightness compensation current component and the chromaticity compensation current component are calculated in parallel, and the corrected compensation current is calculated based on the obtained temperature value of the display panel 100.

[0079] Specifically, within the second time period, the brightness compensation current component and the chromaticity compensation current component are calculated in parallel based on the spectral power distribution S(λ, x, y) and the radiation brightness value L(x, y) obtained in step S1, and the corrected compensation current is calculated based on the temperature value of the display panel 100 obtained in step S1, wherein the second time period is from 21 milliseconds to 50 milliseconds.

[0080] Specifically, the calculation method of the brightness compensation current component and the chromaticity compensation current component, and the method of calculating the corrected compensation current based on the obtained temperature value of the display panel 100 are the same as the calculation method in the second embodiment of the present application. You can refer to the relevant description in the above-mentioned second embodiment and will not repeat them here.

[0081] In some embodiments, the second time period includes adjacent third and fourth sub-time periods. The step of calculating the brightness compensation current component and the chromaticity compensation current component in parallel according to the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y) during the second time period in step S2, and calculating the corrected compensation current according to the acquired temperature value of the display panel 100, includes: S21: In a third sub-time period, according to the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y), a brightness compensation current component and a chromaticity compensation current component are calculated in parallel.

[0082] Specifically, during the third sub-period, the luminance compensation current component and the chrominance compensation current component are calculated in parallel based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y). The third sub-period is from 21 milliseconds to 45 milliseconds. The specific calculation methods of the luminance compensation current component and the chrominance compensation current component refer to the relevant description of the second embodiment above and are not repeated here.

[0083] S22: In a fourth sub-period, a corrected compensation current is calculated according to the acquired temperature value of the display panel 100 , and the brightness compensation current component and the chromaticity compensation current component.

[0084] Specifically, during the fourth sub-time period, a corrected compensation current is synthesized and calculated based on the acquired temperature value of the display panel 100 and the brightness compensation current component and the chromaticity compensation current component calculated in step S21 to reduce the impact of temperature changes of the display panel 100 on the brightness and chromaticity of the display panel 100. The compensation current after temperature drift correction is the final output compensation current. The calculation method of the corrected compensation current can be referred to the relevant description of the second embodiment and will not be repeated here.

[0085] By time-sharing the calculation process of the brightness compensation current component and the chromaticity compensation current component and the calculation process of the correction compensation current for temperature drift correction, the amount of calculation and energy consumption can be reduced.

[0086] S3: In the third time period, the compensation current data is obtained, the digital signal of the compensation current is converted into a pulse signal, and the on-off state of the switching transistor 2033 is controlled to regulate the pixel current of the plurality of sub-pixels 21, and the first frame display image is output.

[0087] Specifically, within the third time period, the data of the compensation current calculated and generated in step S2 is obtained, the digital signal of the compensation current is PWM modulated, and the digital signal of the compensation current is converted into a pulse signal with an adjustable duty cycle. Specifically, the third time period is 51 milliseconds to 100 milliseconds. The setting method of the duty cycle of the pulse signal can refer to the relevant description in the second embodiment and will not be repeated here. The on-off state of the switching transistor 2033 is controlled by the pulse signal to regulate the pixel current of multiple sub-pixels 21 and output the first frame display image. In some embodiments, the level of the pulse signal can also be converted and then output to the switching transistor 2033 to drive the switching transistor 2033 to complete the regulation of the pixel current, thereby completing the compensation of the brightness and chromaticity of the sub-pixel 21.

[0088] By adopting the control method of the display panel 100 provided in the embodiment of the present application, the time from detection to compensation completion can be achieved in less than or equal to 100 milliseconds, which supports uniform display of the first frame of the screen when the power is turned on, and is more conducive to solving the problem of uneven brightness and color of the display panel 100.

[0089] In some embodiments, the method for controlling the display panel 100 further includes: After the first frame of display image is output, the pixel current of the sub-pixel 21 of the display panel 100 whose refresh variation is greater than a preset threshold is recalibrated in each preset time period.

[0090] Specifically, the pixel current of the sub-pixels 21 of the display panel 100 is continuously optimized, and incremental recalibration is performed in the background within each preset time period. Specifically, after outputting the first display frame, the pixel current of the sub-pixels 21 of the display panel 100 whose refresh change is greater than a preset threshold is recalibrated within each preset time period, where the preset time period is in the range of 50 seconds to 70 seconds, and the preset threshold is in the range of 1.5% to 2.5%.

[0091] In a specific embodiment, the preset time period is 60 seconds and the preset threshold is 2%, that is, within every 60 seconds, the sub-pixels 21 with a refresh change greater than 2% are incrementally recalibrated to continuously optimize the pixel currents of the multiple sub-pixels 21 of the display panel 100, thereby continuously compensating for the brightness and chromaticity of the display panel 100, improving the display uniformity of the display panel 100, and more effectively solving the problem of uneven brightness and chromaticity of the display panel 100.

[0092] To verify the performance of the display provided by this application, the inventors conducted systematic testing on five prototypes under comparable experimental conditions. Specifically, the experimental conditions were: a temperature of 25°C ± 0.5°C and a relative humidity of 60% ± 5%, using a Konica Minolta CA-410 imaging colorimeter to perform the systematic testing on the five prototypes. The tests strictly adhere to international display measurement standards: Brightness uniformity testing follows ANSI / NAPM IT7.228-1997. When displaying a pure white image (D65 white point), the luminance values ​​at 81 evenly distributed points on the screen are measured, and the percentage ratio of minimum luminance to average luminance is calculated. Color uniformity testing follows IEC 62341-7, measuring the color coordinates of 81 points using the CIE 1976 uniform chromaticity scale and calculating the maximum color difference. Response time testing uses a high-speed digital storage oscilloscope (Tektronix DPO7104) to capture the interval from system power-up to the first stable frame, triggered by the rising edge of the power switch. Temperature adaptability testing follows MIL-STD-810H Method 503.6, conducted in a -20°C to 85°C temperature cycle chamber. Brightness fluctuations are measured after 30 minutes of 10°C intervals.

[0093] Measured data clearly shows that in brightness uniformity testing, the average value of the five prototypes reached 98.7%, exceeding the industry-recognized excellent threshold of 95%. The worst prototype's brightness uniformity was 97.3%. In terms of color uniformity, the maximum color difference across the entire screen was 0.0023, far below the stringent industry requirement of 0.005. In particular, in the red display state (CIE x=0.680, y=0.320), the edge color shift common in traditional solutions was completely eliminated. In response time testing, the average time from power on to output of the first compensated frame was 89 milliseconds, with a standard deviation of ±5 milliseconds, meeting the design target of less than or equal to 100 milliseconds. Temperature adaptability testing showed that under extreme conditions ranging from -20°C to 85°C, the brightness fluctuation was only 1.2%, and the color temperature offset ΔCCT was less than 50K, significantly improving the brightness fluctuation level of >5% for existing technologies. Power consumption testing showed that the average added power consumption of the compensation system when operating was 53 milliwatts (at an input voltage of 5V), less than 3% of the total power consumption of the display panel. These data fully verify the comprehensive breakthrough of the display panel 100 provided in this application in terms of optical performance, environmental adaptability and energy efficiency.

[0094] The above description is merely an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A display panel, characterized in that: include: Driver backplane; A light-emitting and spectral sensing integrated layer is disposed on one side of the driving backplane and includes a plurality of sub-pixels and a plurality of spectral sensors, wherein the plurality of spectral sensors are disposed in a one-to-one correspondence with the plurality of sub-pixels; the sub-pixels are micro-light-emitting diodes; a groove is disposed on a surface of each sub-pixel away from the driving backplane, wherein the depth of the groove is less than the thickness of the sub-pixel; the spectral sensor is disposed in the groove and is a gallium nitride-based micro-spectral sensor; An optical gap layer is provided on a surface of the light emitting and spectrum sensing integrated layer away from the driving backplane; the optical gap layer is a light-transmitting layer; The microlens layer is arranged on a side of the optical gap layer away from the driving backplane, and includes a plurality of microlenses. The plurality of microlenses are arranged in a one-to-one correspondence with the plurality of sub-pixels.

2. The display panel according to claim 1, wherein: The sub-pixel includes a first n-type gallium nitride layer, an InGaN / GaN quantum well layer, and a first p-type gallium nitride layer stacked in sequence; the spectral sensor includes a light absorption layer and an electrode contact layer, the electrode contact layer includes a second n-type gallium nitride layer and a second p-type gallium nitride layer spaced apart, the light absorption layer is located between the second n-type gallium nitride layer and the second p-type gallium nitride layer, and the light absorption layer has an InGaN / GaN multi-quantum well structure; The groove is arranged close to the edge of the sub-pixel.

3. The display panel according to claim 2, wherein: The area of ​​the spectral sensor accounts for 0.5%-4.5% of the area of ​​the sub-pixel.

4. The display panel according to claim 1, wherein: The ratio between the diameter of the microlens and the diameter of the sub-pixel is greater than or equal to 0.1 and less than or equal to 0.3; the microlens is arranged corresponding to the center position of the sub-pixel; and / or, the refractive index of the microlens is n, n=1.53±0.02; and / or, the light transmittance of the microlens is greater than 99%; And / or, the material of the microlens is UV curable resin; And / or, the material of the optical gap layer is silicon nitride; and / or, the optical gap layer has a thickness of 4.9 μm to 5.1 μm; And / or, the roughness of the surface of the optical gap layer away from the driving backplate is less than 0.5 nanometers.

5. A display device, characterized in that: A display panel comprising a control circuit and any one of claims 1 to 4; wherein the control circuit comprises: a data acquisition module, configured to acquire in real time the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the plurality of sub-pixels; wherein λ is the wavelength of the sub-pixel, λ being in the range of 380 nm to 780 nm, and (x, y) being the spatial coordinates of the sub-pixel; A data processing module, comprising a multi-dimensional compensation value generation module; the multi-dimensional compensation value generation module is used to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel based on the spectral power distribution S (λ, x, y) and the radiance value L (x, y), and respectively calculate the brightness compensation current component and the chromaticity compensation current component to generate a compensation current; The driving module includes a digital-to-analog converter, a pulse width modulation controller and a switching transistor; the digital-to-analog converter is used to convert the digital signal of the compensation current into an analog voltage signal and input it into the pulse width modulation controller, and the pulse width modulation controller is used to convert the analog voltage signal into a pulse signal; the pulse signal is used to control the on-off state of the switching transistor, regulate the pixel current of the sub-pixel, and output the first frame display image.

6. The display device according to claim 5, wherein: The display panel further includes a temperature sensor, which is disposed on the driving backplane and is used to collect the temperature value of the display panel; the temperature sensor is a four-channel temperature sensor; The data processing module further includes a temperature drift correction module; the temperature drift correction module is configured to calculate and correct the compensation current based on the acquired temperature value of the display panel, the brightness compensation current component, and the chromaticity compensation current component; The driving module further includes a level shifter, which is used to receive the pulse signal, convert the level of the pulse signal, and output the converted level to the switching transistor.

7. The display device according to claim 6, wherein: The calculation formula of the CIE 1976 uniform chromaticity scale color coordinates is: ； ； in: ； ； ； in, is the main wavelength offset, =5nm; The calculation formula of the brightness compensation current component is: ； Where γ is the gamma coefficient, γ=2.2; L target is the brightness target value, L target =1000 nits; L max is the maximum brightness of the display panel, L max =1200 nits; K1 is the gain coefficient, K1=0.15 amps; The chromaticity compensation current component is: ； Where, K2=0.08 ampere; ； Among them, the reference color coordinates are ( , ), ( , ) is (0.198, 0.468); ； in, is the dominant wavelength of the pixel; the value of V(λ) follows the CIE standard; is the chromatic aberration sensitivity adjustment factor, when λ>570nm, =1.3; at λ<500 nm, =1.0; when 500 nm ≤ λ ≤ 570 nm, =1.1; The calculation formula for correcting the compensation current is: ； Among them, T ref is the reference temperature, T ref =25°C; T is the temperature value of the display panel obtained; I default is the default drive current, I default =10 mA; is the efficiency temperature coefficient of the sub-pixel, =-0.003 / Kelvin; The duty cycle of the pulse signal is: ； Among them, I max is the maximum allowable current, I max =20 mA; the frequency of the pulse signal is 4 kHz.

8. A method for controlling a display panel, applied to the display panel according to any one of claims 1 to 4; characterized in that: include: During a first time period, optically scan the plurality of sub-pixels of the display panel to obtain, in real time, spectral power distributions S(λ, x, y) and radiant brightness values ​​L(x, y) of the plurality of sub-pixels, and obtain, in real time, a temperature value of the display panel; wherein the first time period is from 0 milliseconds to 20 milliseconds; λ is the wavelength of the sub-pixel, which is in the range of 380 nanometers to 780 nanometers; and (x, y) is the spatial coordinate of the sub-pixel; In a second time period, a brightness compensation current component and a chromaticity compensation current component are calculated in parallel based on the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y), and a corrected compensation current is calculated based on the obtained temperature value of the display panel; wherein the second time period is from 21 milliseconds to 50 milliseconds; During the third time period, the data of the compensation current is obtained, the digital signal of the compensation current is converted into a pulse signal, and the on-off state of the switching transistor is controlled to regulate the pixel current of the plurality of sub-pixels, and output the first frame display image; wherein, the third time period is 51 milliseconds to 100 milliseconds.

9. The method for controlling a display panel according to claim 8, wherein: Also includes: After outputting the first frame display image, within each preset time period, the pixel current of the sub-pixel whose refresh change of the display panel is greater than a preset threshold is re-calibrated; wherein the preset time period is in the range of 50 seconds to 70 seconds, and the preset threshold is in the range of 1.5% to 2.5%.

10. The method for controlling a display panel according to claim 8, wherein: The first time period includes a first sub-time period and a second sub-time period that are adjacent to each other; The step of optically scanning the plurality of sub-pixels of the display panel within the first time period, acquiring the spectral power distribution S(λ, x, y) and the radiant brightness value L(x, y) of the plurality of sub-pixels in real time, and acquiring the temperature value of the display panel in real time includes: During the first sub-period, the spectral power distribution S(λ, x, y) and the radiance value L(x, y) of the plurality of sub-pixels of the display panel are captured at a preset rate; wherein the preset rate is in a range of 950 frames per second to 1050 frames per second; and the first sub-period is 0 milliseconds to 18 milliseconds; In the second sub-time period, the temperature value of the display panel is acquired in real time; wherein the second sub-time period is from 19 milliseconds to 20 milliseconds; and / or, the second time period includes adjacent third sub-time period and fourth sub-time period; The step of calculating, in parallel, a brightness compensation current component and a chromaticity compensation current component according to the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y) during the second time period, and calculating a corrected compensation current according to the obtained temperature value of the display panel includes: In the third sub-time period, a brightness compensation current component and a chromaticity compensation current component are calculated in parallel based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y); wherein the third sub-time period is from 21 milliseconds to 45 milliseconds; In the fourth sub-time period, the compensation current is calculated and corrected according to the acquired temperature value of the display panel, the brightness compensation current component, and the chromaticity compensation current component; wherein the fourth sub-time period is 46 milliseconds to 50 milliseconds.

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