Chip aging test socket and test method

Abstract

The application discloses a chip aging test seat and a test method. The chip aging test seat comprises a base assembly, a temperature control assembly, a cover assembly and a first heat dissipation assembly. The base assembly comprises a limiting piece and a probe piece, and the chip is connected with a test circuit board through the probe piece. The upper end surface of the temperature control assembly is attached to the chip, and the probe piece can be arranged in the temperature control assembly. The cover assembly comprises a test cover and a top piece, and the lower end of the top piece can abut against the upper end of the chip. The first heat dissipation assembly comprises a first heat dissipation piece and a second heat dissipation piece, and the lower end of the first heat dissipation piece can abut against the upper end of the chip. The first heat dissipation assembly is driven to move away from or close to the chip. When the chip needs to be cooled, the chip is attached. When the chip needs to be heated, the first heat dissipation piece is driven to move away from the chip, so that the chip is heated conveniently. The first heat dissipation assembly is driven to meet the requirement of cyclic heating of the chip, and the chip test efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of chip testing technology, and in particular to a chip aging test socket and testing method. Background Technology

[0002] High-temperature aging tests on chips involve heating the chip to its operating temperature or higher to test its resilience and reliability, thereby detecting chip failures at an early stage. This is of great significance for product quality supervision and the selection of high-quality chips.

[0003] The existing test socket mainly includes: a top cover, a rotating ring, a base, and a chip clamping block. The top cover is hinged to one side of the base, the rotating ring is rotatably mounted on the top cover, the base is used to load the chip, and the chip clamping block has a heating rod inside for heating. The chip clamping block contacts the upper surface of the chip through its bottom to perform heating tests on the chip.

[0004] However, some shortcomings still exist in the testing of certain chip aging test sockets: heat dissipation is difficult during long-term operation. When temperature cycling aging tests are required, the chip needs to be cooled cyclically. Because heat dissipation is difficult during long-term operation of the chip aging test socket, the cooling time is long, resulting in low testing efficiency during temperature cycling aging tests. Summary of the Invention

[0005] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes a chip aging test socket that can quickly dissipate heat from the chip, thereby improving the efficiency of chip aging tests.

[0006] The present invention also proposes a chip aging test method applied to the above-mentioned chip aging test socket.

[0007] According to a first aspect of the present invention, the chip aging test socket includes: A base assembly is mounted on a test circuit board via a base plate. The base assembly includes a limiting member and a probe member. The inner side of the limiting member is used to place a chip, and the chip is connected to the test circuit board through the probe member. A temperature control component is floatingly disposed in the base assembly. The temperature control component is located below the limiting member. The upper end surface of the temperature control component is in contact with the chip. The probe can be inserted into the temperature control component. A cover assembly, capable of covering the base assembly, includes a test cover and a stop member, the stop member being movably disposed within the test cover, the lower end of the stop member abutting the upper end of the chip; and A first heat dissipation component is movably disposed within the abutment member. The first heat dissipation component includes a first heat dissipation element and a second heat dissipation element. The first heat dissipation element and the second heat dissipation element are connected. The lower end of the first heat dissipation element can abut against the upper end of the chip. The lower end of the second heat dissipation element is connected to the upper end of the first heat dissipation element. The upper end of the second heat dissipation element is disposed at the upper end of the cover assembly.

[0008] The chip aging test fixture according to a first aspect embodiment of the present invention has at least the following beneficial effects: by driving the first heat dissipation component away from or close to the chip, it can be attached to the chip when cooling is required, thereby enabling rapid cooling of the chip using the first and second heat dissipation components; conversely, when the chip needs heating, the first heat dissipation component can be driven away from the chip, facilitating chip heating. Driving the first heat dissipation component can quickly meet the requirements of cyclic heating of the chip, thereby improving the efficiency of chip aging testing.

[0009] According to some embodiments of the present invention, the first heat dissipation assembly further includes a first driving part and a first sleeve. The first driving part is disposed at the upper end of the first sleeve, the first heat dissipation component and the second heat dissipation component are fixedly disposed in the first sleeve, the first heat dissipation component is located at the lower end of the first sleeve, and the first sleeve is movably inserted into the abutment component.

[0010] According to some embodiments of the present invention, a plurality of second heat sinks are provided, the lower ends of the plurality of second heat sinks are all connected to the upper end face of the first heat sink, the length direction of the plurality of second heat sinks extends along the axial direction of the first sleeve, the outer shell of the first heat sink is connected to the outer shell of the second heat sink, and the interior of the first heat sink and the interior of the second heat sink are interconnected to form a heat dissipation channel.

[0011] According to some embodiments of the present invention, the first heat dissipation assembly further includes a third heat dissipation component, the third heat dissipation component being disposed in the first sleeve and connected to the inner side wall of the first sleeve, and the second heat dissipation component passing through the third heat dissipation component and contacting and connecting with the third heat dissipation component.

[0012] According to some embodiments of the present invention, the abutment is threadedly connected to the test cover. The abutment includes a second driving part, a second sleeve, and an abutment top. The second driving part is connected to the abutment top through the second sleeve, driving the second driving part to rotate so that the abutment top approaches and abuts the upper end of the chip.

[0013] According to some embodiments of the present invention, a second heat dissipation component is further included, which is disposed at the upper end of the first heat dissipation component, and the lower end of the second heat dissipation component abuts against the upper end of the second heat dissipation component and / or the third heat dissipation component.

[0014] According to some embodiments of the present invention, the temperature control component includes a microcapsule PCM structure layer and a resistance wire heating layer, wherein the resistance wire heating layer is embedded in the microcapsule PCM structure layer, the probe can be inserted into the microcapsule PCM structure layer, and the upper end surface of the microcapsule PCM structure layer is attached to the lower end surface of the chip through a thermally conductive adhesive layer.

[0015] According to a second aspect of the present invention, a chip aging test method is applied to a chip aging test socket described in the first aspect of the present invention. The chip aging test method includes the following steps: Step 1: Place the chip in the base assembly, close the cover assembly, and use the abutment to press the chip against the temperature control assembly; Step 2: Heat the temperature control component to a preset temperature and use the temperature control component to heat the chip; Step 3: Use the first heat dissipation component to cool the chip, and at the same time control the temperature control component to reduce the temperature. Step 4: Use the temperature control component to heat the chip again, while controlling the first heat dissipation component to stop cooling the chip. The cyclic test is performed by repeating steps three and four in sequence, so that the chip aging test socket performs cyclic tests on the chip until the preset number of cyclic tests is reached.

[0016] The chip aging test method according to the second aspect of the present invention has at least the following beneficial effects: the chip aging test method has all the beneficial effects brought about by applying the chip aging test socket provided in the first aspect of the present invention, which will not be repeated here.

[0017] According to some embodiments of the present invention, the chip aging test socket further includes a second heat dissipation component, the second heat dissipation component is disposed above the first heat dissipation component, the lower end of the second heat dissipation component abuts against the upper end of the second heat dissipation component, and step three further includes the following step: using the second heat dissipation component to dissipate heat from the first heat dissipation component.

[0018] According to some embodiments of the present invention, the temperature control component includes a microcapsule PCM structure layer and a resistance wire heating layer. The resistance wire heating layer can be embedded in the microcapsule PCM structure layer, and the probe can be inserted into the microcapsule PCM structure layer. The upper end face of the microcapsule PCM structure layer is attached to the lower end face of the chip through a thermally conductive adhesive layer. Step four further includes the following steps: raising the temperature of the resistance wire heating layer to heat the microcapsule PCM structure layer, thereby heating the chip.

[0019] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein: Figure 1 This is a schematic diagram of the structure of the chip aging test socket according to the first aspect of the present invention; Figure 2 for Figure 1 The diagram shown is an exploded view of the chip aging test socket. Figure 3 for Figure 2 A cross-sectional view of the first heat dissipation component of the chip aging test socket is shown. Figure 4 for Figure 1 The diagram shows a half-section of the chip aging test socket.

[0021] Icon labels: Chip aging test socket 1; Chip 2; Test circuit board 3; Base assembly 10; limiting component 11; base plate 12; probe holder 13; Temperature control component 20; Cover assembly 30; test cover 31; abutment 32; second drive unit 321; second sleeve 322; abutment top 323; First heat dissipation assembly 40; first heat dissipation component 41; second heat dissipation component 42; first driving part 43; first sleeve 44; third heat dissipation component 45; Second heat dissipation component 60. Detailed Implementation

[0022] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0023] In the description of this invention, the use of "first" and "second" is for the purpose of distinguishing technical features only, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of the technical features indicated.

[0024] In the description of this invention, unless otherwise explicitly defined, terms such as "setting," "installing," and "connecting" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0025] Reference Figures 1 to 4 According to a first aspect of the present invention, the chip aging test socket 1 includes a base assembly 10, a temperature control assembly 20, a cover assembly 30, and a first heat dissipation assembly 40. The base assembly 10 is mounted on the test circuit board 3 via a base plate 12. The base assembly 10 includes a limiting member 11 and a probe (not shown in the figure). The inner side of the limiting member 11 is used to place the chip 2, and the chip 2 is connected to the test circuit board 3 via the probe. The temperature control assembly 20 is floatingly disposed within the base assembly 10, located below the limiting member 11. The upper end face of the temperature control assembly 20 is in contact with the lower end face of the chip 2, and the probe can pass through the temperature control assembly 20. The cover assembly 30 is disposed above the base assembly 10. The device includes a test cover 31 and a stop member 32. The stop member 32 is movably disposed in the test cover 31, and the lower end of the stop member 32 can abut against the upper end of the chip 2. A first heat dissipation component 40 is movably disposed in the stop member 32. The first heat dissipation component 40 includes a first heat dissipation component 41 and a second heat dissipation component 42. The first heat dissipation component 41 and the second heat dissipation component 42 are connected. The lower end of the first heat dissipation component 41 can abut against the upper end of the chip 2. The lower end of the second heat dissipation component 42 is connected to the upper end of the first heat dissipation component 41, and the upper end of the second heat dissipation component 42 is disposed at the upper end of the cover assembly 30.

[0026] The chip aging test socket 1 of this invention effectively solves the problems of poor heat dissipation during long-term operation and low efficiency of temperature cycling aging test in the prior art through the collaborative innovative design of multiple components, resulting in a significant heat dissipation effect.

[0027] Regarding chip 2 testing and heating, the limiting member 11 of the base assembly 10 provides a stable and precise placement position for chip 2, ensuring that chip 2 will not shift during testing and guaranteeing test accuracy. The probe can pass through the temperature control assembly 20 and is conductive to both chip 2 and the test circuit board 3, achieving a reliable electrical connection between chip 2 and the test circuit board 3, enabling accurate transmission of test signals. The temperature control assembly 20 is floatingly positioned within the base assembly 10 and below the limiting member 11, with its upper surface in close contact with chip 2. This close contact design ensures that heat can be efficiently and evenly transferred to chip 2, thereby accurately simulating the high-temperature environment of chip 2 in actual working scenarios and ensuring the reliability of high-temperature aging tests.

[0028] Regarding chip 2 fixation and pressure control, the test cover 31 of the cover assembly 30 is positioned above the base assembly 10, providing a closed and stable protection for the entire testing environment. The abutment 32 is movably disposed within the test cover 31, with its lower end abutting against the upper end of the chip 2. By adjusting the position and pressure of the abutment 32, the pressure borne by the chip 2 can be flexibly controlled to meet the testing needs of different chips 2, ensuring good contact between the chip 2 and the probe and temperature control assembly 20 during testing, while preventing damage to the chip 2 due to excessive pressure.

[0029] Regarding the improvement of heat dissipation performance, the first heat dissipation component 40 is movably inserted into the abutment component 32, which is one of the core innovations of this invention. The lower end of the first heat dissipation component 41 abuts against the upper end of the chip 2, and can directly absorb the heat generated by the chip 2; the second heat dissipation component 42 is connected to the first heat dissipation component 41, with its lower end connected to the upper end of the first heat dissipation component 41, and its upper end inserted into the upper end of the cover component 30. When the chip 2 generates heat during the high-temperature aging test, the heat is first absorbed by the first heat dissipation component 41, and then quickly conducted to the outside of the test socket through the connected first heat dissipation component 41 and second heat dissipation component 42, forming an efficient heat dissipation channel. This heat dissipation method can quickly reduce the temperature of the chip 2 and its surrounding environment, greatly shortening the heat dissipation time. During temperature cycling aging tests, the heating and heat dissipation process of the chip 2 can be completed quickly, significantly improving test efficiency, reducing test costs, and also reducing damage to the test socket itself caused by prolonged high temperatures, thus extending the service life of the test socket.

[0030] Specifically, the chip aging test socket 1 in this embodiment mainly consists of a base assembly 10, a temperature control assembly 20, a cover assembly 30, and a first heat dissipation assembly 40. The components cooperate with each other to complete the high-temperature aging test and temperature cycle aging test of the chip 2.

[0031] The base assembly 10 is fixedly mounted on the test circuit board 3 via the base plate 12, ensuring a stable connection between the entire test socket and the test circuit board 3. The base assembly 10 includes a limiting member 11 and probe members. The limiting member 11 is a high-precision machined metal frame, the internal shape of which matches the shape of the chip 2 under test, accurately limiting the position of the chip 2 and preventing the chip 2 from moving during the test. The probe members are high-precision elastic probes, evenly distributed inside the limiting member 11. The lower end of the probe members is connected to the pads on the test circuit board 3 by welding or pressing, and the upper end can pass through the temperature control component 20. When the chip 2 is placed inside the limiting member 11, the probe members are in close contact with the test points on the chip 2, realizing the electrical connection between the chip 2 and the test circuit board 3, ensuring that the test signal can be transmitted accurately.

[0032] The temperature control component 20 is mounted in the base assembly 10 using a floating installation method. Specifically, the temperature control component 20 is connected to the base assembly 10 via an elastic support (such as a spring), allowing it to float up and down within a certain range. The temperature control component 20 is located below the limiting member 11, and its upper surface is made of a material with high thermal conductivity (such as copper alloy or thermally conductive adhesive) and is precision-machined to ensure surface flatness, achieving a tight fit with the lower surface of the chip 2. The temperature control component 20 contains a heating element (such as a heating wire or heating film), powered by an external power source, which can quickly heat the chip 2 to the required operating temperature or a temperature higher than the operating temperature. Probes pass through pre-drilled holes on the side or bottom of the temperature control component 20, maintaining electrical connection with the chip 2 and the test circuit board 3, ensuring that the electrical connection is not affected during heating.

[0033] The cover assembly 30 is positioned above the base assembly 10 and consists of a test cover 31 and a stop member 32. The test cover 31 is made of high-strength plastic or metal, providing excellent sealing and insulation to ensure reliable protection for the testing environment. The stop member 32 is movably mounted within the test cover 31 and can be a sliding metal rod sleeve. The lower end of the metal rod sleeve is flat and polished to minimize damage to the surface of the chip 2. The stop member 32 and the test cover 31 are connected via a threaded connection or a guide groove structure. By rotating or pushing the stop member 32, the pressure of the lower end of the stop member 32 on the upper end of the chip 2 can be precisely adjusted, ensuring good contact between the chip 2 and the probe and temperature control assembly 20 during testing, while preventing damage to the chip 2 due to excessive pressure.

[0034] The first heat dissipation component 40 is movably inserted into the top member 32, and includes a first heat dissipation component 41 and a second heat dissipation component 42. The first heat dissipation component 41 is a heat spreader structure (or a copper heat sink column), with a planar structure at its lower end, directly contacting the upper end of the chip 2, and can quickly absorb the heat generated by the chip 2. The first heat dissipation component 41 has multiple tiny heat dissipation channels inside, increasing the heat dissipation area and improving heat dissipation efficiency. The second heat dissipation component 42 is a hollow metal conduit, communicating with the interior of the first heat dissipation component 41. The lower end of the second heat dissipation component 42 is tightly connected to the upper end of the first heat dissipation component 41 by welding or threaded connection, ensuring smooth heat conduction. The upper end of the second heat dissipation component 42 is inserted into the upper end of the cover assembly 30, extending to the outside of the test socket. In actual use, when the chip 2 generates heat during the high-temperature aging test, the heat is first absorbed by the first heat dissipation component 41, then conducted to the second heat dissipation component 42 through the heat dissipation channels inside the first heat dissipation component 41, and finally dissipated into the air outside the test socket through the second heat dissipation component 42. To further improve heat dissipation, a cooling fan or heat sink can be installed on the upper end of the second heat sink 42, or heat sink fins (such as the third heat sink 45) can be installed around the second heat sink 42 to accelerate heat dissipation.

[0035] During the high-temperature aging test of chip 2, the chip to be tested is first placed within the limiting member 11 of the base assembly 10 to ensure proper contact between chip 2 and the probe member. Then, the cover assembly 30 is placed on top of the base assembly 10, and the position of the abutment member 32 is adjusted so that its lower end abuts against the upper end of chip 2, applying appropriate pressure. Next, the temperature control assembly 20 is activated to heat chip 2 to the required operating temperature or higher for the high-temperature aging test. During the cyclic test, the heat generated by chip 2 is quickly dissipated to the outside of the test socket through the first heat dissipation assembly 40, ensuring the temperature stability of chip 2 and its surrounding environment. When a temperature cycling aging test is required, after the high-temperature test phase is completed, the temperature control assembly 20 is turned off. The first heat dissipation assembly 40 cyclically contacts chip 2, rapidly reducing the temperature of chip 2 to the set low temperature value. Then, the temperature control assembly 20 is restarted to raise the temperature, and this cycle is repeated to complete the temperature cycling aging test. Due to the efficient heat dissipation performance of the first heat dissipation assembly 40, the heat dissipation time is greatly shortened, improving the efficiency of the temperature cycling aging test.

[0036] Therefore, it can be understood that the chip aging test socket 1 according to the first aspect embodiment of the present invention has at least the following beneficial effects: by driving the first heat dissipation component 40 away from or close to the chip 2, it can be attached to the chip 2 when the chip 2 needs to be cooled, thereby enabling rapid cooling of the chip 2 using the first heat dissipation component 41 and the second heat dissipation component 42; and when the chip 2 needs to be heated, the first heat dissipation component 41 can be driven away from the chip 2, thereby facilitating the heating of the chip 2. By driving the first heat dissipation component 40, the requirements for cyclic heating of the chip 2 can be quickly met, thereby improving the efficiency of the chip aging test.

[0037] Furthermore, referring to Figures 2 to 4 In some embodiments of the present invention, the first heat dissipation assembly 40 further includes a first driving part 43 and a first sleeve 44. The first driving part 43 is disposed at the upper end of the first sleeve 44, and the first heat dissipation component 41 and the second heat dissipation component 42 are fixedly disposed in the first sleeve 44. The first heat dissipation component 41 is located at the lower end of the first sleeve 44, and the first sleeve 44 is movably inserted into the abutment component 32.

[0038] In the chip aging test socket 1 of this embodiment, the first heat dissipation component 40 further includes a first driving part 43 and a first sleeve 44. The first sleeve 44 is made of a high-strength metal alloy material with certain heat insulation properties, such as stainless steel or aluminum alloy, which can ensure the stability of the structure and reduce the interference of external heat on the heat dissipation process inside the sleeve. The first sleeve 44 can be tightly and smoothly inserted into the abutment 32, ensuring that there will be no shaking or jamming during the movement, thereby maintaining the stability of the overall structure of the test socket. The second heat dissipation component 42 and the first heat dissipation component 41 are firmly fixed inside the first sleeve 44. Specifically, the fixing method is to provide several evenly distributed slots or protrusions (not shown in the figure) on the inner wall of the first sleeve 44, and at the same time, matching buckles or grooves are machined at corresponding positions on the outer surface of the second heat dissipation component 42. During installation, the second heat dissipation component 42 is slowly pushed in along the axial direction of the first sleeve 44, so that the buckles and slots or protrusions and grooves are precisely engaged, realizing a reliable mechanical connection. This fixing method not only ensures the stable position of the first heat sink 41 and the second heat sink 42 within the first sleeve 44, preventing displacement due to vibration or external forces during testing, but also facilitates the disassembly, replacement, or maintenance of the second heat sink 42 when necessary. The second heat sink 42 remains a hollow metal conduit, preferably made of a copper alloy with excellent thermal conductivity, to accelerate heat transfer from the first heat sink 41 to the external environment.

[0039] The first drive unit 43 is disposed at the upper end of the first sleeve 44, enabling the first heat dissipation assembly 40 to be adjusted within the abutment 32. The first drive unit 43 may be a linear drive device with a push rod, which is firmly fixed to the upper end of the first sleeve 44 by welding. The drive rod of the first drive unit 43 is connected to the moving parts (such as push rods or sliders) inside the first sleeve 44. When the first drive unit 43 receives an external control signal (such as an electrical signal or pneumatic signal from a test control system), the drive rod will move linearly along the axis of the first sleeve 44, thereby driving the first sleeve 44 to move up and down within the abutment 32. Alternatively, when the first sleeve 44 is screwed into the abutment 32, the first drive unit 43 may also be configured as a horizontally positioned push rod. By pushing the horizontal push rod, the push rod rotates horizontally around the axis of the first sleeve 44, thereby driving the first sleeve 44 to rotate within the abutment 32, and thus causing the first sleeve 44 to move up and down within the abutment 32.

[0040] In practical applications, when chip 2 is in the high-temperature aging test stage, the first driving unit 43 adjusts the first sleeve 44 to a suitable position according to the preset program or the real-time monitored temperature of chip 2. When chip 2 reaches the preset temperature and needs to be cooled, the lower end of the first heat sink 41 is tightly attached to the upper surface of chip 2 to efficiently absorb the heat generated by chip 2 and quickly dissipate it to the outside of the test socket through the second heat sink 42. When the heating stage of the temperature cycling aging test is required, the first driving unit 43 responds quickly and drives the first sleeve 44 to move upward a certain distance, causing the first heat sink 41 to temporarily separate from the upper surface of chip 2 to prevent the first heat sink 41 from dissipating heat from chip 2. At this time, the abutment 32 presses against chip 2, making it contact the temperature control component 20. After the temperature of chip 2 rises to the set value, the first driving unit 43 acts again to move the first sleeve 44 downward, so that the first heat sink 41 is attached to the upper surface of chip 2 again, and the chip 2 can be cooled again.

[0041] Reference Figures 2 to 4 In some embodiments of the present invention, multiple second heat sinks 42 are provided, and the lower ends of the multiple second heat sinks 42 are all connected to the upper end face of the first heat sink 41. The length direction of the multiple second heat sinks 42 extends along the axial direction of the first sleeve 44. The outer shell of the first heat sink 41 is connected to the outer shell of the second heat sink 42. The interior of the first heat sink 41 and the interior of the second heat sink 42 are interconnected to form a heat dissipation channel (not shown in the figure).

[0042] In the chip aging test socket 1 of this embodiment, the specific implementation is further as follows: Multiple second heat sinks 42 are provided, and these second heat sinks 42 are evenly distributed and connected to the upper end face of the first heat sink 41. For example, 3 to 6 second heat sinks 42 can be provided according to actual heat dissipation requirements and space layout. The lower end of each second heat sink 42 is securely connected to the upper end face of the first heat sink 41 through a suitable connection method, such as welding or using a threaded connection with a sealing ring, ensuring good sealing at the connection point and preventing leakage of the heat transfer medium. The length direction of the multiple second heat sinks 42 extends along the axial direction of the first sleeve 44. This design allows the second heat sinks 42 to fully utilize the space inside the first sleeve 44, maximizing the heat dissipation length within a limited space, thereby improving heat dissipation efficiency. Simultaneously, the arrangement of multiple second heat sinks 42 extending along the axial direction of the first sleeve 44 also facilitates uniform heat dissipation and avoids localized overheating. The outer shell of the first heat sink 41 and the outer shell of the second heat sink 42 are connected through an integral molding process or a subsequent welding process. The unibody molding process allows the outer shells of the first heat sink 41 and the second heat sink 42 to be manufactured as a single unit, reducing connection gaps and improving structural stability and sealing. The welding process, on the other hand, allows the outer shells of the first heat sink 41 and the second heat sink 42 to be joined together through precise welding after they have been manufactured separately, ensuring a strong and airtight connection. The interiors of the first heat sink 41 and the second heat sink 42 are interconnected, forming a heat dissipation channel. In practical applications, the heat dissipation channel is in a vacuum state and can be filled with a thermally conductive medium (such as pure water) and a capillary structure. When the chip 2 generates heat, the first heat sink 41 absorbs the heat, the pure water vaporizes upon heating, and is rapidly conducted to the second heat sink 42 through the capillary structure. The heat is then transferred to each of the second heat sinks 42 through the thermally conductive medium. Because the second heat sink 42 has a large heat dissipation area and a good heat dissipation structure (such as internal fins, spiral channels, or a vapor chamber structure), it can quickly dissipate heat to the external environment. For example, during the high-temperature aging test, the temperature of chip 2 rises, the heat-conducting medium vaporizes and circulates in the heat dissipation channel formed by the first heat sink 41 and the second heat sink 42, continuously carrying away the heat of chip 2. Finally, it condenses into pure water at the cold end of the second heat sink 42 and flows back to the first heat sink 41 to continue to dissipate heat for chip 2, ensuring that the temperature of chip 2 is always kept within a suitable range, thereby improving the accuracy and reliability of the chip 2 aging test, and also ensuring the safety of chip 2 during the test process, avoiding damage to chip 2 due to overheating.

[0043] Reference Figures 2 to 4In some embodiments of the present invention, the first heat dissipation assembly 40 further includes a third heat dissipation component 45, which is disposed in the first sleeve 44 and connected to the inner side wall of the first sleeve 44. The second heat dissipation component 42 passes through the third heat dissipation component 45 and is in contact with the third heat dissipation component 45.

[0044] Specifically, in the chip aging test socket 1 of this embodiment, the first heat dissipation assembly 40, in addition to including the first heat sink 41, the second heat sink 42, and the first sleeve 44, also includes a third heat sink 45. The third heat sink 45 is disposed within the first sleeve 44 and is tightly connected to the inner wall of the first sleeve 44. This connection can be achieved by an interference fit, where the outer diameter of the third heat sink 45 is slightly larger than the inner diameter of the first sleeve 44, and the third heat sink 45 is securely installed on the inner wall of the first sleeve 44 by compression; alternatively, welding can be used to weld the third heat sink 45 to the inner wall of the first sleeve 44 to ensure a strong connection. The second heat sink 42 passes through the third heat sink 45 and is in contact with it. During installation, the third heat sink 45 is pre-set with through holes matching the number and size of the second heat sink 42, through which the second heat sink 42 passes. To ensure a good contact connection, the through holes of the second heat sink 42 and the third heat sink 45 can be tightly fitted, or thermally conductive materials such as thermal grease can be applied to the contact area between the second heat sink 42 and the third heat sink 45 to reduce contact thermal resistance and improve heat transfer efficiency.

[0045] The third heat sink 45 can be made of a metal material with good thermal conductivity and be arranged in a sheet-like form, such as copper or aluminum sheets. The third heat sink 45 can serve as the heat dissipation fins of the second heat sink 42, arranged at intervals within the first sleeve 44 to increase the heat dissipation area of ​​the second heat sink 42. Furthermore, the internal structure of the third heat sink 45 can be designed according to heat dissipation requirements. For example, multiple heat dissipation fins (not shown in the figure) can be arranged inside the third heat sink 45. These fins can be distributed along the extension direction of the second heat sink 42 to increase the heat dissipation area and improve the heat dissipation effect. When the chip 2 generates heat, the heat is first absorbed by the first heat sink 41 and then transferred to the second heat sink 42 through the thermal medium. Simultaneously, since the second heat sink 42 and the third heat sink 45 are in contact, some heat is also directly transferred to the third heat sink 45. The third heat sink 45, through its connection with the inner wall of the first sleeve 44, further dissipates heat into the air surrounding the first sleeve 44, or transfers heat to the first sleeve 44 through contact with it, and then the heat is dissipated by the first sleeve 44. This multi-stage heat dissipation structure design greatly enhances the heat dissipation capacity of the first heat dissipation component 40, which can more effectively dissipate the heat generated by the chip 2, ensuring that the chip 2 is always in a suitable temperature environment during the aging test, improving the stability and reliability of the chip 2 aging test, and helping to more accurately evaluate the performance and reliability of the chip 2.

[0046] Furthermore, referring to Figures 2 to 4 In some embodiments of the present invention, the abutment 32 is threadedly connected to the test cover 31. The abutment 32 includes a second driving part 321, a second sleeve 322 and an abutment 323. The second driving part 321 is connected to the abutment 323 through the second sleeve 322, driving the second driving part 321 to rotate so that the abutment 323 approaches and abuts the upper end of the chip 2.

[0047] Specifically, in the chip aging test socket 1 of this embodiment, the abutment 32 is installed inside the test cover 31 via a threaded connection. This design allows the abutment 32 to flexibly and precisely adjust the pressure applied to the chip 2 to meet the needs of different chip 2 testing scenarios. The specific structure, connection method, and working process of each component of the abutment 32 are described in detail below.

[0048] The test cover 31 has a pre-machined internal threaded hole with a specific pitch and depth at the position corresponding to the abutment 32. The abutment 32 is a sleeve structure, and its outer surface is machined with external threads that match the internal threaded hole of the test cover 31. During installation, the external threaded end of the abutment 32 is aligned with the internal threaded hole of the test cover 31, and the abutment 32 is rotated to gradually screw it into the test cover 31 until it reaches the appropriate initial position. This threaded connection method is not only convenient to install, but also ensures the stability of the connection between the abutment 32 and the test cover 31, preventing loosening due to vibration or external forces during testing and ensuring the stability of the testing environment.

[0049] The second drive unit 321 is the power source for the abutment 32. Its principle is similar to that of the first drive unit 43 in the aforementioned embodiment; both can use a micro motor (not shown in the figure) or manual drive as the drive core. Taking a manual drive nut as an example, the drive nut is installed on the upper end of the second sleeve 322, and can be connected by screws or integral molding to ensure that the micro motor does not shake or shift during operation. Rotating the drive nut drives the abutment 32 to move up and down, thereby driving the abutment top 323 to move up and down. The second sleeve 322 has a hollow structure; its upper end is fixedly connected to the second drive unit 321, and its lower end is connected to the abutment top 323. When the second drive unit 321 is rotated, the second sleeve 322 will move linearly along its own axis, thereby driving the abutment top 323 to move up and down. The abutment top 323 is the component that directly contacts the chip 2; its shape and material selection are crucial to the testing effect and safety of the chip 2. The abutment 323 adopts a circular structure with a diameter slightly larger than that of chip 2 to ensure that pressure can be applied evenly to the four corners of chip 2. The abutment 323 is made of a high-strength, low-friction engineering plastic, such as polytetrafluoroethylene (PTFE). This material ensures that the abutment 323 has sufficient strength to withstand pressure without scratching or damaging the surface of chip 2. The abutment 323 is fixedly connected to a nut via bolts or a snap-fit ​​structure. When the nut moves up and down within the second sleeve 322, it drives the abutment 323 to move synchronously. The lower end face of the abutment 323 is finely polished to form a smooth plane and coated with a thin layer of thermally conductive silicone grease. The thermally conductive silicone grease fills the tiny gaps between the abutment 323 and the surface of chip 2, improving heat conduction efficiency and also providing a certain degree of cushioning to reduce the impact force on chip 2.

[0050] During the high-temperature aging test of chip 2, chip 2 is first placed within the limiting member 11 of the base assembly 10 to ensure proper contact between chip 2 and the probe member. Then, the second drive unit 321 is activated via the external control system, and the second drive unit 321 begins to rotate forward, pushing the top plate 323 downward. As the top plate 323 approaches chip 2, the pressure value exerted on chip 2 is monitored in real time by the test system. When the pressure value reaches a preset appropriate range, the external control system controls the micro motor to stop rotating, keeping the top plate 323 in that position and applying stable pressure to chip 2. At this time, the temperature control component 20 starts working to heat chip 2, while the first heat dissipation component 40 is ready to dissipate heat at any time.

[0051] When the heat dissipation stage of the temperature cycling aging test is required, the external control system controls the second drive unit 321 to rotate in the reverse direction, driving the top abutment 323 upward. This causes the top abutment 323 to briefly separate from the upper surface of the chip 2, reducing the pressure on the chip 2 and creating better conditions for heat dissipation. Once the temperature of the chip 2 drops to the set value, the micro motor rotates in the forward direction again, driving the top abutment 323 downward, reapplying appropriate pressure to the chip 2 for the next temperature rise test. This precise drive control allows for flexible adjustment of the position of the top abutment 323, enabling precise control of the pressure exerted on the chip 2 according to different test requirements, thus improving the accuracy and reliability of the chip 2 aging test.

[0052] Furthermore, referring to Figures 2 to 4 In some embodiments of the present invention, the chip aging test socket 1 further includes a second heat dissipation component 60, which is disposed at the upper end of the first heat dissipation component 40, and the lower end of the second heat dissipation component 60 abuts against the upper end of the third heat dissipation component 45 and / or the upper end of the second heat dissipation component 42.

[0053] In the chip aging test socket 1 of this embodiment, the second heat dissipation component 60 is made entirely of a metal material with high thermal conductivity and good heat dissipation area, preferably aluminum alloy, which is lightweight, cost-effective, and has excellent heat dissipation performance. This component mainly includes three parts: a heat dissipation substrate (not shown in the figure), heat dissipation fins (not shown in the figure), and a heat dissipation mechanism (not shown in the figure). The heat dissipation substrate is a rectangular metal plate of uniform thickness, and its dimensions are customized according to the installation space at the upper end of the first heat dissipation component 40 to ensure that it can fully cover the upper end of the second heat dissipation component 42 and achieve good thermal contact. The surface of the heat dissipation substrate undergoes fine polishing, with roughness controlled to an extremely low level to improve the heat conduction efficiency between it and the contacting components.

[0054] The heat dissipation fins are evenly and densely distributed on the side of the heat dissipation base away from the contact surface. The fins are thin and designed in a wavy or serrated shape; this special shape effectively increases the heat dissipation area and promotes air convection between the fins, accelerating heat dissipation. The heat dissipation fins and the heat dissipation base are manufactured using a one-piece molding process, extruded through a precision mold, ensuring that there is no contact interface with high thermal resistance between them, allowing heat to be rapidly conducted from the heat dissipation base to the heat dissipation fins. Furthermore, the surface of the heat dissipation fins undergoes anodizing treatment, forming a dense aluminum oxide protective film, which not only improves the corrosion resistance of the heat dissipation fins but also enhances their radiative heat dissipation capacity.

[0055] The heat dissipation mechanism is installed on the upper end of the heat sink fins. This mechanism accelerates airflow and enhances heat dissipation. The heat dissipation mechanism can employ a cooling fan, which is mounted on the heat sink substrate or near the heat sink fins using a suitable fixing structure. The fan speed and airflow can be adjusted according to actual heat dissipation requirements. During chip aging testing, when chip 2 generates heat, the heat is transferred through the first heat dissipation component 40 to the second heat sink 42 and / or the third heat sink 45, and then absorbed by the lower end of the second heat dissipation component 60 and transferred to the heat sink substrate. The heat sink substrate conducts the heat to the heat sink fins, and simultaneously, the cooling fan starts, accelerating airflow between the heat sink fins and rapidly dissipating the heat to the external environment. This multi-stage heat dissipation structure design further improves the heat dissipation capacity of the chip aging test socket, ensuring that chip 2 maintains a stable temperature during high-temperature aging testing, improving the accuracy and reliability of the test, and extending the chip's lifespan. It should be emphasized that the heat dissipation mechanism can also employ water cooling to quickly dissipate heat from the heat sink fins and heat sink substrate to the external environment. Therefore, in this embodiment, the specific heat dissipation structure of the second heat sink component 60 is not specifically limited.

[0056] Therefore, based on actual heat dissipation requirements and the internal space layout of the test fixture, the second heat dissipation component 60 has three installation methods.

[0057] Installed on the upper end of the third heat sink 45: When the second heat sink 60 is installed on the upper end of the third heat sink 45, the lower end of the heat sink substrate of the second heat sink 60 is tightly attached to the surface of the third heat sink 45 by using thermally conductive silicone grease with high thermal conductivity. The thermally conductive silicone grease can fill the tiny gaps between the heat sink substrate and the third heat sink 45, reducing thermal resistance and allowing the heat from the third heat sink 45 to be transferred to the heat sink substrate quickly and efficiently. Installed on the upper end of the second heat sink 42: If the second heat sink 60 is installed on the upper end of the first heat sink 40, the lower end of its heat sink substrate is in close contact with the upper end of the second heat sink 42. Thermally conductive silicone grease is also used as the heat conduction medium to ensure that heat can be smoothly transferred from the second heat sink 42 to the second heat sink 60. In terms of fixing method, by designing a special positioning groove and fixing hole inside the test holder, the second heat sink 60 is accurately placed in the positioning groove, and then it is firmly fixed with bolts or clips to ensure that the second heat sink 60 will not shift during the test. Simultaneously installed on the upper ends of the second heat sink 42 and the third heat sink 45: When the second heat sink 60 is selected to simultaneously abut the upper ends of the second heat sink 42 and the third heat sink 45, the second heat sink 60 can conduct heat through the second heat sink 42 and the third heat sink 45 at the same time, which is more conducive to the heat dissipation of the first heat sink 40.

[0058] During the high-temperature aging test of chip 2, the heat generated by chip 2 is first absorbed and partially dissipated by the first heat dissipation component 40. When the heat is transferred to the second heat dissipation component 42, if the second heat dissipation component 60 is installed on top of the first heat dissipation component 40, the heat on the second heat dissipation component 42 will be quickly conducted to the heat dissipation fins through the heat dissipation substrate. The heat dissipation fins, with their large heat dissipation area and special shape design, accelerate heat exchange with the surrounding air and dissipate the heat to the external environment of the test socket.

[0059] Furthermore, referring to Figure 2 as well as Figure 4 In some embodiments of the present invention, the base assembly 10 further includes a probe seat 13, which is disposed on the upper end surface of the base plate 12 and located below the temperature control assembly 20. The probe is disposed in the probe seat 13, and the upper end of the probe is movably inserted through the temperature control assembly 20. The temperature control assembly 20 is buoyantly disposed on the base plate 12 by means of an elastic element (not shown in the figure).

[0060] In this chip aging test socket 1, the design of the probe holder 13 and the floating temperature control component 20 ensures accurate and stable contact between the probe and the chip 2, while also taking into account the effective heating of the chip 2 by the temperature control component 20 and the adaptive adjustment during the test process. The specific structure, installation method and working principle are described in detail below.

[0061] The probe holder 13 is made entirely of high-strength, high-insulation engineering plastics, such as polyetheretherketone (PEEK). This material not only possesses excellent mechanical strength, capable of withstanding certain pressure and vibration, but also exhibits good electrical insulation, effectively preventing electrical interference between probes and between probes and other metal components of the base assembly 10. The probe holder 13 is rectangular or cubic in shape, and its dimensions are customized according to the number and layout of the probes to ensure stable installation of all probes. The lower end face of the probe holder 13 is fixed to the upper end face of the base plate 12 by multiple locating pins and bolts. The locating pins are inserted into pre-machined locating holes on the base plate 12 and the probe holder 13 to achieve precise positioning of the probe holder 13, ensuring the positional accuracy of the probes and corresponding pads on the chip 2. The bolts further securely fix the probe holder 13 to the base plate 12, preventing the probe holder 13 from moving or shaking during testing. On the upper end face of the probe holder 13, there are multiple probe mounting holes evenly distributed. The diameter and depth of these mounting holes are precisely machined according to the external dimensions of the probe component to ensure that the probe component can be accurately and stably installed in the probe holder 13.

[0062] The probe is a flexible metal probe, typically made of beryllium copper alloy. This material has high elasticity, good conductivity, and wear resistance, maintaining stable electrical performance during repeated insertion and removal. The lower end of the probe is inserted into the mounting hole of the probe holder 13 and fixed by interference fit or a small amount of thermally conductive adhesive to ensure a tight connection between the probe and the probe holder 13, while ensuring good thermal conductivity so that the heat generated by the chip 2 can be transferred to the probe holder 13 and the base plate 12 in a timely manner. The upper end of the probe extends from the mounting hole of the probe holder 13 and is movably inserted into the temperature control assembly 20. Corresponding to the position of the probe, the temperature control assembly 20 has through holes with a diameter matching that of the probe. The upper end of the probe passes through these through holes, and there is a small gap between the probe and the through holes. This gap ensures that the probe can float freely up and down under pressure, while preventing excessive horizontal wobbling that could affect the contact accuracy with the chip 2. To further enhance the contact stability between the probe and chip 2, gold plating was applied to the upper surface of the probe. The gold plating layer can reduce contact resistance, improve signal transmission quality, and prevent oxidation of the probe surface, thus extending its service life.

[0063] The temperature control component 20 is buoyantly mounted on the base plate 12 via elastic elements. These elastic elements are multiple evenly distributed helical springs made of stainless steel, possessing good elasticity and corrosion resistance, and maintaining stable elastic performance during long-term use. Multiple spring mounting posts are fixed on the base plate 12 around the mounting area of ​​the probe holder 13 and the temperature control component 20, with threaded holes machined at the top of each post. Spring mounting holes are provided at corresponding positions on the edges of the temperature control component 20. During installation, the lower end of the helical spring is fitted onto the spring mounting post, and a nut is used to secure it, preventing it from falling off during use. Then, the temperature control component 20 is placed on top of the helical spring, with the upper end of the spring inserted into the spring mounting hole of the temperature control component 20. At this point, the temperature control component 20 is suspended under the support of the helical springs, allowing it to float up and down within a certain range relative to the base plate 12.

[0064] When chip 2 is placed on temperature control component 20, the weight of chip 2 itself and any external forces applied during the test will cause temperature control component 20 to compress the helical spring downwards, moving it a certain distance downwards along a direction perpendicular to base plate 12. During this process, the probe element, because it is movably inserted through temperature control component 20 and its lower end is fixed to probe holder 13, will extend upwards relative to temperature control component 20, thus making close contact with the pads of chip 2. The elasticity of the helical spring allows temperature control component 20 to automatically adjust its height according to the thickness and placement of chip 2, ensuring good contact pressure between the probe element and chip 2 at all times, and avoiding test signal distortion or test failure due to poor contact.

[0065] Meanwhile, during the test, if chip 2 experiences slight expansion or deformation due to heat, the temperature control component 20 can adaptively adjust itself under the action of the helical spring, always maintaining stable contact between the probe and chip 2. This floating temperature control component 20 design not only improves the reliability and accuracy of chip 2 aging tests, but also effectively protects chip 2 and the probe, preventing damage caused by excessive compression.

[0066] In the actual chip 2 aging test, the collaborative work of the probe holder 13, the probe elements, and the floating temperature control assembly 20 played a crucial role. The probe holder 13 provided a stable mounting base for the probe elements, ensuring their positional accuracy. The probe elements, moving through the temperature control assembly 20, maintained good contact with the chip 2 even when the assembly was floating, achieving accurate electrical connection and data transmission. The floating design of the temperature control assembly 20 adapted to different states of the chip 2 and changes during the testing process, ensuring effective heating of the chip 2 while avoiding damage caused by mechanical stress. This design allows the chip aging test socket 1 to meet the testing needs of different types and sizes of chips 2, improving the versatility and adaptability of the test socket and providing strong support for the high-quality production and performance evaluation of the chip 2.

[0067] Furthermore, referring to Figure 2 as well as Figure 4 In some embodiments of the present invention, the temperature control component 20 includes a microcapsule PCM structure layer (not shown in the figure) and a resistance wire heating layer (not shown in the figure). The resistance wire heating layer is embedded in the microcapsule PCM structure layer, and the probe can be inserted into the microcapsule PCM structure layer. The upper end surface of the microcapsule PCM structure layer is attached to the lower end surface of the chip 2 through a thermally conductive adhesive layer.

[0068] In this chip aging test socket 1, the temperature control component 20 adopts an innovative design combining a microcapsule PCM structure layer and a resistance wire heating layer. Leveraging the characteristics of the microcapsule phase change material (PCM) and the precise heating of the resistance wire, it achieves efficient, stable, and uniform heating of the chip 2. Simultaneously, it works in conjunction with the probe components to ensure smooth testing. The specific structure, installation method of each component, and working principle are described in detail below.

[0069] The microcapsule PCM structure layer is a core component of the temperature control component 20, prepared by encapsulating phase change material (PCM) using microcapsule encapsulation technology. The PCM is a paraffin-based organic phase change material with a suitable phase change temperature range (selected based on the actual temperature requirements of the chip 2 aging test). During the phase change process, it can absorb or release a large amount of latent heat, effectively stabilizing the temperature of the temperature control component 20 and reducing temperature fluctuations. The shell material of the microcapsules is urea-formaldehyde resin, which has good chemical stability and mechanical strength, preventing leakage of the PCM during the phase change process and ensuring the structural integrity of the microcapsules during long-term use. The microcapsule PCM structure layer is prepared by spray drying or interfacial polymerization of a mixed solution containing the PCM and the shell material. The prepared microcapsule PCM structure layer has a uniform sheet-like structure, and its thickness can be adjusted according to heating requirements, generally controlled between 2 and 5 mm. The interior of this structure layer is filled with a large number of tiny microcapsule particles, which are evenly distributed, allowing the PCM to function uniformly throughout the entire structure layer.

[0070] The resistance wire heating layer is embedded in the interlayer of the microcapsule PCM structure layer, providing basic heating energy. The resistance wire is made of nickel-chromium alloy, a material with high resistivity, good oxidation resistance, and corrosion resistance, enabling long-term stable operation at high temperatures. The diameter of the resistance wire is selected based on the heating power and the size of the structure layer, typically between 0.1 and 0.3 mm. During fabrication, the resistance wire is first wound into a specific helical shape to increase its length, thereby achieving greater heating power at the same voltage. Then, the wound resistance wire is uniformly embedded into the interlayer of the microcapsule PCM structure layer using a special mold and process. During embedding, it is ensured that the resistance wire is evenly distributed within the microcapsule PCM structure layer to avoid localized overheating or uneven heating. The two ends of the resistance wire extend from the edge of the microcapsule PCM structure layer for connection to an external power source.

[0071] The probe can be inserted into the microcapsule PCM structure layer. To ensure smooth insertion without affecting the performance of the microcapsule PCM structure layer, a through-hole with a diameter slightly larger than the probe's diameter is pre-machined on the microcapsule PCM structure layer at the corresponding probe position. The through-hole is machined using laser drilling, a process that ensures dimensional accuracy and surface quality while minimizing damage to the internal structure of the microcapsule PCM structure layer. During installation, the probe is inserted into the through-hole from the lower end face of the microcapsule PCM structure layer and exits from the upper end face. A gap exists between the probe and the through-hole, which is sealed and enhanced for thermal conductivity by filling with thermally conductive silicone grease. The thermally conductive silicone grease fills the tiny gap between the probe and the through-hole, reducing thermal resistance and allowing heat generated by chip 2 to be quickly conducted to the microcapsule PCM structure layer through the probe, while also preventing leakage of the phase change material within the microcapsule PCM structure layer.

[0072] The upper surface of the microcapsule PCM structure layer is bonded to the lower surface of chip 2 via a thermally conductive adhesive layer. The thermally conductive adhesive is a high-thermal-conductivity silicone adhesive, which can quickly conduct the heat generated by the resistance wire heating layer and the heat released or absorbed by the microcapsule PCM structure layer during phase transition to chip 2, ensuring that chip 2 can quickly reach and stabilize at the set aging test temperature. During the bonding process, an appropriate amount of silicone thermally conductive adhesive is first evenly applied to the upper surface of the microcapsule PCM structure layer, with the thickness controlled between 0.1 and 0.2 mm to ensure good thermal conductivity and bonding strength. Then, chip 2 is carefully placed on the microcapsule PCM structure layer coated with thermally conductive adhesive, and appropriate pressure is applied to ensure a tight bond between chip 2 and the microcapsule PCM structure layer, and to remove air bubbles from the thermally conductive adhesive. Finally, the entire temperature control component 20 and chip 2 assembly is placed in a constant temperature and humidity environment to allow the silicone thermally conductive adhesive to fully cure and form a strong thermally conductive adhesive layer.

[0073] During the aging test of chip 2, when the external power is turned on, the resistance wire heating layer begins to heat up, transferring heat to the microcapsule PCM structure layer. The phase change material in the microcapsule PCM structure layer absorbs the heat generated by the resistance wire heating layer, and the temperature gradually rises. When the temperature reaches the phase change temperature of the phase change material, the phase change material begins to undergo a phase change (e.g., from solid to liquid). During the phase change process, it absorbs a large amount of latent heat from the resistance wire heating layer, thus keeping the temperature of the microcapsule PCM structure layer relatively stable and avoiding a rapid temperature rise. At the same time, the microcapsule PCM structure layer evenly conducts heat to chip 2 through the thermally conductive adhesive layer, causing the temperature of chip 2 to gradually rise to the set aging test temperature. During the test, if the temperature of chip 2 fluctuates due to its own heating or external environmental factors, the phase change material in the microcapsule PCM structure layer will release or absorb heat through a reverse phase change (e.g., from liquid to solid), automatically adjusting the temperature and maintaining the temperature stability of chip 2.

[0074] It is understandable that the aforementioned temperature control component 20 can also employ metal-ceramic (MCH) technology, where tungsten or molybdenum-manganese paste is printed onto a ceramic cast blank, hot-pressed and then sintered at high temperature. This structure gives the heating element good electrical and thermal conductivity, while the ceramic substrate provides good insulation. Alternatively, thermocouple heater technology can be used. The thermocouple heater itself does not directly generate heat; instead, it uses a thermocouple as a temperature sensor, combined with a heating element (such as a resistance wire or ceramic heating element) to form a closed-loop temperature control system. The thermocouple converts the temperature signal into an electrical signal, which is fed back to the temperature controller. The temperature controller adjusts the power of the heating element based on the difference between the set temperature and the actual temperature, thereby achieving precise temperature control. Therefore, it should be noted that in this embodiment, the heating method and structure of the temperature control component 20 are not specifically limited; as long as it can heat the chip 2, it is acceptable.

[0075] The chip aging test method according to a second aspect of the present invention is applied to the chip aging test socket 1 of the first aspect of the present invention described above. The chip aging test method includes the following steps: Step 1: Place the chip 2 to be tested in the base assembly 10, close the cover assembly 30, and use the abutment 32 to press the chip 2 against the temperature control assembly 20; Step 2: Heat the temperature control component 20 to the preset temperature and use the temperature control component 20 to heat the chip 2; Step 3: Use the first heat dissipation component 40 to cool down the chip 2, and at the same time control the temperature control component 20 to reduce the temperature. Step 4: Use the temperature control component 20 to heat the chip 2 again, while controlling the first heat dissipation component 40 to stop cooling the chip 2. The cycle test is repeated sequentially from step three to step four, so that the chip aging test socket 1 performs a cycle test on the chip 2 until the preset number of cycle tests is reached.

[0076] Specifically, the chip 2 aging test method is implemented based on the chip aging test socket 1 of the first aspect embodiment described above. By precisely controlling the temperature change of chip 2 during the heating and cooling process, it simulates the complex temperature environment that chip 2 may experience in actual use, thereby comprehensively and efficiently completing the aging test of chip 2. The specific implementation details of each step of this test method are described in detail below.

[0077] Step 1: Before starting the chip 2 aging test, the chip 2 to be tested must be correctly installed in the base assembly 10 of the chip aging test socket 1. First, the operator opens the cover assembly 30, which is connected to the base assembly 10 by a hinge, allowing for flexible opening and closing. After opening the cover assembly 30, place the chip 2 stably in the receiving cavity inside the limiting member 11, positioning it above the temperature control assembly 20, ensuring that the position of the chip 2's solder pads accurately corresponds to the position of the probe. Care should be taken to avoid scratching or contaminating the surface of the chip 2 during placement to ensure the accuracy of the test. After the chip 2 is placed, slowly close the cover assembly 30. During the closing process of the cover assembly 30, the abutment 32 on the cover assembly 30 will gradually approach the chip 2. The abutment 32 is made of elastic rubber, with a flat lower end surface, allowing for uniform contact with the upper surface of the chip 2. Once the cover assembly 30 is fully closed, the abutment 32, under its own elasticity and the appropriate pressure applied by the cover assembly 30, firmly presses the chip 2 against the temperature control assembly 20, ensuring good thermal and electrical contact between the chip 2 and the temperature control assembly 20, as well as between the chip 2 and the probe. Simultaneously, the high-temperature resistant elastic rubber abutment 32 also acts as a buffer, preventing mechanical damage to the chip 2 due to excessive pressure.

[0078] Step Two: After chip 2 is installed, the temperature control component 20 is activated to heat chip 2. Since the temperature control component 20 includes a microcapsule PCM structure layer and a resistance wire heating layer embedded within it, the test system first energizes the resistance wire heating layer. Upon energization, the resistance wire heating layer rapidly generates heat and transfers it to the microcapsule PCM structure layer. The phase change material in the microcapsule PCM structure layer begins to absorb the heat generated by the resistance wire heating layer, and the temperature gradually rises. During the heating process, temperature changes are monitored in real time by temperature sensors located near the temperature control component 20 or on chip 2. The temperature sensors use high-precision thermocouples or platinum resistance temperature sensors, with a measurement accuracy of ±0.1℃, accurately reflecting the actual temperature of chip 2. The test system compares the preset temperature value (set according to the aging test requirements of chip 2, for example, 125℃) with the actual temperature fed back by the temperature sensor, and controls the heating rate by adjusting the heating power of the resistance wire heating layer.

[0079] Specifically, if the actual temperature is lower than the preset temperature, the test system will increase the duty cycle of the PWM controller output pulse, increasing the conduction time of the power switch transistor, thereby increasing the heating power of the resistance wire heating layer and accelerating the heating rate. If the actual temperature is close to the preset temperature, the test system will gradually decrease the duty cycle of the PWM controller output pulse, reducing the heating power of the resistance wire heating layer to achieve stable heating and avoid temperature overshoot. The specific control method is to gradually reduce the heating power of the resistance wire heating layer, until the power supply is stopped. After the power supply is stopped, the phase change material in the microcapsule PCM structure layer begins to undergo a reverse phase change (such as from liquid to solid), releasing the previously absorbed heat during the phase change process, further assisting the heating of chip 2. When the actual temperature fed back by the temperature sensor reaches the preset temperature, the resistance wire heating layer maintains the current heating power or stops the power supply, causing the released phase change material to undergo a reverse phase change, releasing the latent heat of the previously absorbed resistance wire, keeping the temperature control component 20 at the preset temperature, and providing a stable aging test temperature environment for chip 2.

[0080] Step 3: After chip 2 has completed its heating and aging process at a preset temperature for a certain period of time, it needs to be cooled down, i.e., the deheating step. First, the first heat dissipation component 40 is activated to cool chip 2. The first heat dissipation component 40 is usually a small vapor chamber heat sink, a heat pipe heat sink, or a multi-dimensional heat sink combining a vapor chamber and heat pipes (specifically, a planar vapor chamber combined with vertically connected heat pipes, along with heat dissipation fins to form a multi-dimensional heat sink), and is installed close to chip 2. After the first heat dissipation component 40 is activated, the first heat sink 41 (specifically a planar heat spreader combined with a vertically arranged heat pipe) of the first heat dissipation component 40 is tightly attached to the chip 2, so that the heat is first absorbed by the first heat sink 41, and then conducted to the second heat sink 42 (i.e., the vertically arranged heat pipe) through the heat dissipation channel inside the first heat sink 41. Furthermore, the second heat sink 42 can also transfer the heat to the third heat sink 45 (heat dissipation fins). Finally, the heat is dissipated into the air outside the test socket through the second heat sink 42 and the third heat sink 45. In order to further improve the heat dissipation effect, a cooling fan, water-cooled radiator or heat sink (i.e., the second heat dissipation component 60) can be installed on the upper end of the second heat sink 42, or heat dissipation fins (i.e., the third heat sink 45) can be set on the periphery of the second heat sink 42 to accelerate the heat dissipation and accelerate the cooling process of the chip 2. At the same time, the test system controls the temperature control component 20 to cool the chip 2 in a coordinated manner. The specific control method is as follows: the temperature control component 20 stops supplying power, the resistance wire stops heating, and the phase change material in the microcapsule PCM structure layer begins to undergo a reverse phase change. During this process, the previously absorbed heat is released to continuously heat the chip 2. The chip 2 then enters the deheating stage in conjunction with the first heat dissipation component 40, continuously heating the chip 2. This prevents thermal stress damage caused by a sudden drop in temperature due to heat dissipation from the first heat dissipation component 40. Therefore, the temperature control component 20 can assist the first heat dissipation component 40 in cooling the chip 2. This combination of heat release from the phase change material of the temperature control component 20 and forced convection cooling from the first heat dissipation component 40 can quickly and uniformly reduce the temperature of the chip 2, reducing the impact of temperature gradients on the performance of the chip 2.

[0081] During the deheating process, the temperature sensor continuously monitors the temperature of chip 2. The testing system dynamically adjusts the speed of the cooling fan at the upper end of the second heat sink 42 or the power of the water-cooled heat sink (i.e., the second heat dissipation component 60) based on the difference between the preset cooling target temperature (e.g., 85°C) and the actual temperature. For example, when the actual temperature differs significantly from the target temperature, the cooling fan operates at a higher speed to accelerate heat dissipation; when the actual temperature approaches the target temperature, the cooling fan speed gradually decreases to achieve stable cooling and prevent thermal stress damage to chip 2 caused by a sudden temperature drop.

[0082] Step Four: Once the temperature of chip 2 drops to the preset cooling target temperature, the secondary heating step begins. At this time, the test system restarts the temperature control component 20 to heat chip 2, while simultaneously controlling the first heat dissipation component 40 to stop cooling chip 2. The heating process of the temperature control component 20 is similar to that in Step Two. By adjusting the heating power of the resistance wire heating layer, the temperature of the temperature control component 20 gradually increases, thereby transferring heat to chip 2 and raising its temperature. During the secondary heating process, the temperature of chip 2 is monitored in real time by a temperature sensor. Based on the difference between the preset secondary heating target temperature (which can be the same as the initial preset temperature or adjusted according to test requirements, such as returning to 125℃) and the actual temperature, the heating power of the resistance wire heating layer is precisely controlled to ensure that chip 2 can quickly and stably reach the secondary heating target temperature.

[0083] Cyclic Testing: After completing the secondary heating step, steps three and four are repeated sequentially to form a complete temperature cycle. During each cycle, chip aging test socket 1 continuously performs various performance tests on chip 2, including but not limited to electrical performance tests (such as leakage current, threshold voltage, output current, etc.) and functional tests (such as the correctness of chip 2's internal logic circuits, the accuracy of signal transmission, etc.). The test system records various performance parameters of chip 2 during each cycle and compares them with the initial test data or preset pass / fail standards. Simultaneously, the test system pre-sets the number of cycle tests, which is set according to the chip 2's aging test standards or customer requirements, for example, 1000 cycles. The cyclic test ends when the preset number of repetitions of steps three and four is reached. After the cyclic test is completed, the test system analyzes and processes all recorded test data to generate a detailed test report. The test report includes the performance change curve of chip 2 during each cycle, information on whether performance degradation or failure occurred, etc., providing a scientific basis for chip 2 quality assessment and reliability analysis. This cyclic testing method can fully simulate the repeated temperature changes that chip 2 may experience in actual use, effectively detect the stability and reliability of chip 2 during long-term use, and improve the quality of chip 2 products.

[0084] Furthermore, in some embodiments of the second aspect of the present invention, the chip aging test socket 1 further includes a second heat dissipation component 60, the second heat dissipation component 60 is disposed at the upper end of the first heat dissipation component 40, the lower end of the second heat dissipation component 60 abuts against the upper end of the second heat dissipation component 42, and step three further includes the following steps: using the second heat dissipation component 60 to dissipate heat from the first heat dissipation component 40.

[0085] In some embodiments, step three may further include the following steps: connecting the second heat dissipation component 60 to a thermoelectric component (not shown in the figure), using the thermoelectric component to generate electricity from the heat dissipated by the second heat dissipation component 60, and storing the power generated by the thermoelectric component in an energy storage module (not shown in the figure) after energy processing. Specifically, the thermoelectric component can be placed in the external environment of the chip aging test socket 1. The thermoelectric component is connected to the heat dissipation end of the second heat dissipation component 60, and the heat dissipated by the second heat dissipation component 60 can be transferred to the thermoelectric component, thereby converting heat into electricity. In step three, the component is activated to remove heat from the chip 2 through forced convection, while simultaneously dissipating heat into the surrounding environment. The thermoelectric component uses a Seebeck effect-based thermoelectric generator, which consists of multiple P-type and N-type semiconductor thermocouples connected in series, and has the ability to directly convert heat energy into electrical energy. To ensure efficient operation of the thermoelectric component, a suitable temperature difference needs to be formed on both sides. In step three, the hot air discharged from the second heat dissipation component 60 blows directly onto the hot end of the thermoelectric component, raising its temperature. Meanwhile, the cold end of the thermoelectric component receives auxiliary heat dissipation from other heat dissipation components, maintaining its temperature at a relatively low level. Generally, by designing a reasonable heat dissipation structure, a temperature difference of 50 to 100°C can be created between the hot and cold ends of the thermoelectric component. This temperature difference range ensures that the thermoelectric component has high power generation efficiency. The electrical energy processed by the energy processing circuit is transmitted through wires to the energy storage module on the test circuit board 3 for storage. The energy storage module is a supercapacitor bank, capable of rapidly absorbing and releasing electrical energy, storing the energy recovered by the thermoelectric component. In subsequent testing, the electrical energy stored in the energy storage module can be used to power the heating layer of the resistance wire, assisting the external power supply in maintaining the aging test temperature of the chip 2, thereby reducing dependence on the external power supply.

[0086] Furthermore, in some embodiments of the second aspect of the present invention, the temperature control component 20 includes a microcapsule PCM structure layer and a resistance wire heating layer. The resistance wire heating layer can be embedded in the microcapsule PCM structure layer, and the probe can be inserted into the microcapsule PCM structure layer. The upper end face of the microcapsule PCM structure layer is attached to the lower end face of the chip 2 through a thermally conductive adhesive layer. Step four further includes the following steps: raising the temperature of the resistance wire heating layer so that the resistance wire heating layer heats the microcapsule PCM structure layer, and the microcapsule PCM structure layer heats the chip 2.

[0087] In some embodiments, step four may further include the following steps: controlling the resistance wire heating layer to utilize the power supply in the energy storage module to heat the microcapsule PCM structure layer, thereby heating the chip 2 through the microcapsule PCM structure layer. After completing the thermoelectric recovery in step three, the energy storage module (supercapacitor bank) has stored a certain amount of electrical energy. If the energy storage module has sufficient power, the test system sends a start signal to the power supply control circuit of the resistance wire heating layer. The power supply control circuit mainly consists of a power switch (such as an IGBT), a drive circuit, and a protection circuit. The drive circuit receives the control signal from the test system, converts it into a level signal suitable for driving the power switch, turns on the power switch, and connects the power supply in the energy storage module to the resistance wire heating layer, forming a current path. The protection circuit monitors the current and voltage in real time to prevent damage to the resistance wire heating layer and the energy storage module caused by abnormal conditions such as overcurrent or overvoltage. Once an abnormality is detected, the protection circuit will quickly cut off the circuit and issue an alarm signal. When the resistance wire heating layer receives electrical energy from the energy storage module, the resistance wire begins to heat up. The heat generated by the resistance wire heating layer is first transferred to the microcapsule PCM structure layer in close contact with it. Under the heat of the resistance wire heating layer, the phase change material in the microcapsule PCM structure layer begins to absorb heat, and the temperature gradually rises. When the temperature reaches the phase change temperature of the phase change material, the phase change material undergoes a solid-liquid phase change, absorbing a large amount of heat while maintaining a relatively constant temperature, and uniformly storing the heat. With continuous heat input, the overall temperature of the microcapsule PCM structure layer rises, and the heat is transferred to chip 2 through thermal conduction. Due to the good thermal uniformity of the microcapsule PCM structure layer, it can ensure that all parts of chip 2 are heated evenly, avoiding local overheating or damage to chip 2 due to excessive temperature gradients. In addition, the heat absorption and release characteristics of the microcapsule PCM structure layer during the phase change process can also play a certain temperature buffering role, making the temperature change of chip 2 more stable during heating, which is beneficial to improving the accuracy and reliability of chip 2 aging tests.

[0088] In step four, the testing system monitors temperature changes in real time using temperature sensors located on the surface of chip 2 and in the microcapsule PCM structure layer. The temperature sensors employ high-precision thermistors or digital temperature sensors, capable of accurately measuring temperature and transmitting data to the testing system. The testing system dynamically adjusts the heating power of the resistance wire heating layer based on the difference between the preset secondary heating target temperature (set according to the aging test requirements of chip 2, e.g., 125℃) and the actual temperature. Specifically, the testing system uses a PID (Proportional-Integral-Derivative) control algorithm to adjust the duty cycle of the PWM controller's output pulse in real time. When the actual temperature is lower than the target temperature, the PID controller increases the duty cycle of the PWM controller's output pulse according to the magnitude and trend of the temperature deviation, increasing the conduction time of the power switch and thus increasing the heating power of the resistance wire heating layer, accelerating the heating rate. When the actual temperature approaches the target temperature, the PID controller gradually decreases the duty cycle of the PWM controller's output pulse, reducing the heating power of the resistance wire heating layer to achieve stable heating and avoid temperature overshoot. Simultaneously, the testing system will determine the phase transition state of the microcapsule PCM structure layer based on feedback data from the temperature sensor. When the microcapsule PCM structure layer completes the phase transition and the temperature begins to rise rapidly, the testing system will further precisely control the heating power to ensure that the temperature of chip 2 can accurately and stably reach the target temperature and maintain it at that temperature for aging testing.

[0089] By implementing thermoelectric utilization in step four, the effective use of recovered electrical energy in the energy storage module is achieved, forming a complete energy recycling system. On the one hand, this reduces dependence on external power sources, lowering testing costs and energy consumption. On the other hand, utilizing the phase change characteristics of the microcapsule PCM structure layer to heat chip 2 improves heating uniformity and stability, better simulating the temperature environment of chip 2 during actual operation, and thus more accurately assessing the reliability and performance changes of chip 2 under long-term high-temperature environments. Furthermore, this energy utilization method helps reduce heat waste during testing and minimizes the impact of the test setup on the surrounding environment, aligning with the concept of green and environmentally friendly development.

[0090] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0091] Of course, the present invention is not limited to the above-described embodiments. Those skilled in the art can make equivalent modifications or substitutions without departing from the spirit of the present invention. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A chip burn-in socket, comprising: include: A base assembly is mounted on a test circuit board via a base plate. The base assembly includes a limiting member and a probe member. The inner side of the limiting member is used to place a chip, and the chip is connected to the test circuit board through the probe member. A temperature control component is floatingly disposed in the base assembly. The temperature control component is located below the limiting member. The upper end surface of the temperature control component is in contact with the lower end surface of the chip. The probe can be inserted into the temperature control component. A cover assembly, capable of covering the base assembly, includes a test cover and a stop member, the stop member being movably disposed within the test cover, the lower end of the stop member abutting the upper end of the chip; and A first heat dissipation component is movably disposed within the abutment member. The first heat dissipation component includes a first heat dissipation element and a second heat dissipation element. The first heat dissipation element and the second heat dissipation element are connected. The lower end of the first heat dissipation element can abut against the upper end of the chip. The lower end of the second heat dissipation element is connected to the upper end of the first heat dissipation element. The upper end of the second heat dissipation element is disposed within the upper end of the cover assembly. The first heat dissipation assembly further includes a first driving part and a first sleeve. The first driving part is disposed at the upper end of the first sleeve. The first heat dissipation component and the second heat dissipation component are disposed in the first sleeve. The first heat dissipation component is located at the lower end of the first sleeve. The first sleeve can be movably inserted into the abutment component. When the chip is in the high-temperature aging test stage, the first driving unit adjusts the first sleeve to a suitable position according to the preset program or the real-time monitored temperature of the chip. When the chip reaches the preset temperature and needs to be cooled, the lower end of the first heat sink is made to adhere to the upper surface of the chip to absorb the heat generated by the chip, and the heat is dissipated to the outside of the test socket through the second heat sink. When the heating stage in the temperature cycling aging test is required, the first driving unit drives the first sleeve to move upward a preset distance, so that the first heat sink is separated from the upper surface of the chip to prevent the first heat sink from dissipating heat from the chip. At this time, the chip is pressed against by the abutment, so that it comes into contact with the temperature control component.

2. The chip burn-in socket according to claim 1, wherein, The second heat sink is provided in multiple ways, and the lower ends of the multiple second heat sinks are all connected to the upper end face of the first heat sink. The length direction of the multiple second heat sinks extends along the axis of the first sleeve. The outer shell of the first heat sink is connected to the outer shell of the second heat sink. The interior of the first heat sink and the interior of the second heat sink are interconnected to form a heat dissipation channel.

3. The chip aging test socket according to claim 2, characterized in that, The first heat dissipation assembly further includes a third heat dissipation component, which is disposed in the first sleeve and connected to the inner side wall of the first sleeve. The second heat dissipation component can pass through the third heat dissipation component and contact the third heat dissipation component.

4. The chip aging test socket according to claim 1, characterized in that, The abutment is threadedly connected to the test cover. The abutment includes a second driving part, a second sleeve, and an abutment top. The second driving part is connected to the abutment top through the second sleeve, driving the second driving part to rotate so that the abutment top approaches and abuts the upper end of the chip.

5. The chip aging test socket according to claim 3, characterized in that, It also includes a second heat dissipation component, which is disposed above the first heat dissipation component, and the lower end of the second heat dissipation component abuts against the upper end of the second heat dissipation component and / or the third heat dissipation component.

6. The chip aging test socket according to claim 1, characterized in that, The temperature control component includes a microcapsule PCM structure layer and a resistance wire heating layer. The resistance wire heating layer can be embedded in the microcapsule PCM structure layer, and the probe can be inserted into the microcapsule PCM structure layer. The upper surface of the microcapsule PCM structure layer is attached to the lower surface of the chip through a thermally conductive adhesive layer.

7. A chip aging test method, characterized in that, The method, applied to the chip aging test socket according to any one of claims 1 to 4, comprises the following steps: Step 1: Place the chip in the base assembly, close the cover assembly, and use the abutment to press the chip against the temperature control assembly; Step 2: Heat the temperature control component to a preset temperature and use the temperature control component to heat the chip; Step 3: Use the first heat dissipation component to cool the chip, and at the same time control the temperature control component to reduce the temperature. Step 4: Use the temperature control component to heat the chip again, while simultaneously controlling the first heat dissipation component to stop cooling the chip; The cyclic test is performed by repeating steps three and four in sequence, so that the chip aging test socket performs cyclic tests on the chip until the preset number of cyclic tests is reached.

8. The chip aging test method according to claim 7, characterized in that, The chip aging test socket also includes a second heat dissipation component, which is disposed above the first heat dissipation component. The lower end of the second heat dissipation component abuts against the upper end of the second heat dissipation component. Step three also includes the following step: using the second heat dissipation component to dissipate heat from the first heat dissipation component.

9. A chip aging test method according to claim 8, characterized in that, The temperature control component includes a microcapsule PCM structure layer and a resistance wire heating layer. The resistance wire heating layer can be embedded in the microcapsule PCM structure layer, and the probe can be inserted into the microcapsule PCM structure layer. The upper end face of the microcapsule PCM structure layer is attached to the lower end face of the chip through a thermally conductive adhesive layer. Step four further includes the following steps: raising the temperature of the resistance wire heating layer so that the resistance wire heating layer heats the microcapsule PCM structure layer, and the microcapsule PCM structure layer heats the chip.

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