Display device

Abstract

The invention discloses a display device which comprises a backlight module and a display panel arranged on the light emitting side of the backlight module, the display panel comprises a display area, the display area comprises a first area and a second area, the first area comprises a light compensation sub-pixel, the light compensation sub-pixel comprises a light supplementing unit, and the light supplementing unit is arranged on the side, close to a liquid crystal layer, of a first substrate; the thin film transistor layer further comprises a light compensation transistor, the light supplementing unit is electrically connected with the light compensation transistor, the semi-transparent and semi-reflecting layer is arranged in the second area, and the light supplementing unit can provide a light compensation effect in a weak light environment; therefore, the brightness of the semi-transparent and semi-reflective liquid crystal display device under the weak light condition can be effectively improved, the image quality is improved, and meanwhile, the backlight power consumption is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display device. BACKGROUND

[0002] The mainstream liquid crystal display (LCD) is mainly a transmissive display with backlight transmission as the working mode. In order to have a good display effect, it is generally required that the ambient brightness should be lower than the luminous brightness of the display screen. In a bright environment, especially in a strong sunlight outdoor environment, a reflective display can be used to achieve better visibility and energy saving by making full use of the amount of light in the environment to realize display. The transflective liquid crystal display (TR-LCD) structure formed by combining the two can use different display modes in different brightness environments and achieve seamless switching effect.

[0003] The display area of the transflective liquid crystal display device can be divided into a reflective area and a transmissive area. In a strong light outdoor environment, external ambient light is reflected by the reflective area to provide a display light source for the transflective liquid crystal display device to display an image. In an environment without light or with weak light, the outgoing light of the backlight source in the transflective liquid crystal display device passes through the transmissive area to provide a display light source for the transflective liquid crystal display device to display an image.

[0004] However, when the backlight source of the transflective liquid crystal display device is turned on in a weak light environment, the images in the transmissive area and the reflective area can be seen at the same time, which leads to the problem of reducing the sharpness of the picture quality and the display defect problem of glare caused by strong backlight. When the backlight source is turned off, the problem of insufficient reflected light and dark brightness occurs. SUMMARY

[0005] The embodiments of the present application provide a display device which can improve the brightness of the transflective liquid crystal display device in a weak light condition, improve the picture quality, and reduce the backlight power consumption to solve the above technical problems.

[0006] In order to achieve the above purpose, the present application provides a display device, which comprises a backlight module and a display panel arranged on the light emitting side of the backlight module, and the display panel comprises:

[0007] An array substrate comprising a first substrate and a thin film transistor layer, wherein the thin film transistor layer is arranged on the side of the first substrate away from the backlight module;

[0008] A transflective layer arranged on the side of the array substrate away from the backlight module;

[0009] a liquid crystal layer disposed on a side of the transflective layer away from the array substrate; and

[0010] a color filter substrate disposed on a side of the liquid crystal layer away from the transflective layer;

[0011] The display panel includes a display area, the display area includes a first area and a second area adjacent to the first area, the first area includes a light compensation sub-pixel, and the second area includes at least one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0012] The light compensation sub-pixel includes a light compensation unit disposed on a side of the first substrate close to the liquid crystal layer, the thin film transistor layer includes a light compensation transistor, the light compensation unit is electrically connected to the light compensation transistor, and the transflective layer is disposed in the second area.

[0013] In some embodiments, the light compensation unit includes an electroluminescent layer, a first electrode, and a second electrode, the first electrode and the second electrode are located on two sides of the electroluminescent layer and are connected to the electroluminescent layer.

[0014] In some embodiments, the light compensation transistor includes a light sensing layer, a third electrode, and a fourth electrode, the third electrode and the fourth electrode are located on a side of the light sensing layer away from the first substrate and are connected to the light sensing layer.

[0015] The third electrode is electrically connected to one of the first electrode and the second electrode, and the fourth electrode is electrically connected to the other of the first electrode and the second electrode.

[0016] In some embodiments, the thin film transistor layer further includes at least one first thin film transistor and a plurality of second thin film transistors.

[0017] The display panel further includes a first transparent electrode and a second transparent electrode, the first transparent electrode is disposed on a side of the liquid crystal layer close to the thin film transistor layer and is located in the first area, and the second transparent electrode is disposed on a side of the liquid crystal layer away from the thin film transistor layer and is located in the first area and the second area.

[0018] The first thin film transistor is electrically connected to the first transparent electrode, and the second thin film transistor is electrically connected to the transflective layer.

[0019] In some embodiments, the display device includes a transmissive display mode, a light compensation reflective display mode, and a reflective display mode.

[0020] In a dark environment, the backlight module is turned on, the light compensation transistor is turned off, the first thin film transistor is turned on, and the display device is in a transmissive display mode.

[0021] In a weak light environment, the backlight module is turned off, the light compensation transistor is turned on, the first thin film transistor is turned on, and the display device is in a light compensation reflective display mode.

[0022] In a strong light environment, the backlight module is turned off, the light compensation transistor is turned on, the first thin film transistor is turned off, and the display device is in a reflective display mode.

[0023] In some embodiments, the thin film transistor layer comprises:

[0024] The first metal layer comprises a gate electrode;

[0025] The second metal layer is disposed on the side of the first metal layer away from the first substrate;

[0026] The second metal layer comprises a source / drain electrode and the first electrode, the second electrode, the third electrode, and the fourth electrode.

[0027] In some embodiments, the thin film transistor layer further comprises a semiconductor layer disposed on the side of the first metal layer away from the first substrate;

[0028] The semiconductor layer comprises an active layer and the light sensing layer.

[0029] In some embodiments, the color filter substrate comprises a light transmission portion and a color filter portion;

[0030] The light transmission portion is located in the first area, and the light transmission portion comprises a transparent color resist;

[0031] The color filter portion is located in the second area, and the color filter portion comprises at least one of a red color resist, a green color resist, and a blue color resist.

[0032] In some embodiments, the display panel further comprises a non-display area, the non-display area is disposed adjacent to the display area, and the light compensation transistor is disposed in the non-display area.

[0033] In some embodiments, the electroluminescent layer emits white light.

[0034] The display device provided by the application is a transflective liquid crystal display device, compared with the transflective liquid crystal display device in the prior art, the display device provided by the application is additionally provided with a first area (equivalent to a light compensation area), the first area is provided with a light compensation sub-pixel, the light compensation sub-pixel comprises a light compensation unit, in addition, the thin film transistor layer is further provided with a light compensation transistor, the light compensation transistor is electrically connected with the light compensation unit to control the light compensation unit to emit light, therefore, by using the display device provided by the application, the light compensation unit can be turned on in a weak light environment to improve the brightness of the display device, meanwhile, the backlight source can be turned off to avoid the display problems such as glare caused by the transflective layer under strong backlight, and the power consumption of the backlight module can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art.

[0036] In order to more completely understand the application and its beneficial effects, the following will be described in conjunction with the drawings, wherein the same reference numerals in the following description represent the same parts.

[0037] Figure 1 is a cross-sectional structure schematic diagram of a display device provided in an exemplary embodiment of the application;

[0038] Figure 2 is a light compensation transistor top view schematic diagram of a display device provided in an exemplary embodiment of the application;

[0039] Figure 3 is a partial top view schematic diagram of a display device provided in an exemplary embodiment of the application;

[0040] Figure 4 is a structure schematic diagram of step S11 of a preparation method of a display device provided in an exemplary embodiment of the application;

[0041] Figure 5 is a structure schematic diagram of step S12 of a preparation method of a display device provided in an exemplary embodiment of the application;

[0042] Figure 6 is a structure schematic diagram of step S13 of a preparation method of a display device provided in an exemplary embodiment of the application;

[0043] Figure 7FIG. 14 is a structural schematic diagram of step S14 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0044] Figure 8 FIG. 15 is a structural schematic diagram of step S15 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0045] Figure 9 FIG. 16 is a structural schematic diagram of step S16 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0046] Figure 10 FIG. 17 is a structural schematic diagram of step S17 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0047] Figure 11 FIG. 18 is a structural schematic diagram of step S21 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0048] Figure 12 FIG. 19 is a structural schematic diagram of step S22 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0049] Figure 13 FIG. 20 is a structural schematic diagram of step S23 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0050] Figure 14 FIG. 21 is a structural schematic diagram of step S24 of a method for manufacturing a display device according to an exemplary embodiment of the present application;

[0051] Figure 15 FIG. 22 is a structural schematic diagram of step S3 of a method for manufacturing a display device according to an exemplary embodiment of the present application.

[0052] BRIEF DESCRIPTION OF THE DRAWINGS

[0053] 10, display device; 11, display panel; 12, backlight module; 100, array substrate; 110, first substrate; 120, thin film transistor layer; 121, first thin film transistor; 122, second thin film transistor; 123, first metal layer; 1231, gate; 1232, data line; 1233, scan line; 1234, metal connection line; 124, second metal layer; 1241, source / drain electrode; 125, semiconductor layer; 1251, active layer; 126, gate insulating layer; 127, protection layer; 130, light compensation unit; 131, electroluminescent layer; 132, first electrode; 133, second electrode; 140, light compensation transistor; 141, photosensitive layer; 142, third electrode; 143, fourth electrode; 200, semi-transmission and semi-reflection layer; 300, liquid crystal layer; 310, spacer column; 321, first liquid crystal subpart; 322, second liquid crystal subpart; 323, third liquid crystal subpart; 324, fourth liquid crystal subpart; 400, color filter substrate; 410, second substrate; 420, light transmission part; 430, color filter part; 431, red color resistance; 432, green color resistance; 433, blue color resistance; 440, black matrix; 510, first transparent electrode; 520, second transparent electrode; 600, upper polarizer; 700, cover plate;

[0054] AA, display area; NA, non-display area; A1, first area; A2, second area. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by a person skilled in the art without creative effort belong to the protection scope of the present application.

[0056] The present application provides a display device 10, please refer to Figure 1The display device 10 comprises a backlight module 12 and a display panel 11 arranged on the light emitting side of the backlight module 12. The display panel 11 comprises an array substrate 100, a semi-transmission and semi-reflection layer 200, a liquid crystal layer 300 and a color film substrate 400. The array substrate 100 comprises a first substrate 110 and a thin film transistor layer 120, and the thin film transistor layer 120 is arranged on the side of the first substrate 110 away from the backlight module 12. The semi-transmission and semi-reflection layer 200 is arranged on the side of the array substrate 100 away from the backlight module 12. The liquid crystal layer 300 is arranged on the side of the semi-transmission and semi-reflection layer 200 away from the array substrate 100. The color film substrate 400 is arranged on the side of the liquid crystal layer 300 away from the semi-transmission and semi-reflection layer 200. The display panel 11 comprises a display area AA, and the display area AA comprises a first area A1 and a second area A2. The first area A1 comprises light compensation sub-pixels, and the second area A2 comprises at least one of red sub-pixels (R), green sub-pixels (G) and blue sub-pixels (B). The light compensation sub-pixel comprises a light compensation unit 130 arranged on the side of the first substrate 110 close to the liquid crystal layer 300. The thin film transistor layer 120 comprises a light compensation transistor 140, and the light compensation unit 130 is electrically connected to the light compensation transistor 140. The semi-transmission and semi-reflection layer 200 is arranged on the second area A2.

[0057] In the present application, the display panel 11 comprises a display area AA and a non-display area NA adjacent to the display area AA. The display area AA comprises a first area A1 and a second area A2. The second area A2 is a conventional R / G / B display area comprising at least one of red sub-pixels, green sub-pixels and blue sub-pixels. The first area A1 is equivalent to a light compensation area and does not contain R / G / B sub-pixels but comprises light compensation sub-pixels. The light compensation sub-pixel comprises a light compensation unit 130 which can emit light and achieve light compensation effect. The light compensation unit 130 is electrically connected to the light compensation transistor 140. The light compensation transistor 140 serves as a switch of the circuit connected to the light compensation unit 130 and controls whether the light compensation unit 130 emits light. For example, when the light compensation transistor 140 is turned on, the light compensation unit 130 emits light, and thus the first area A1 of the display panel 11 emits light, thereby effectively improving the overall display brightness of the display device 10. When the light compensation transistor 140 is turned off, the light compensation unit 130 does not emit light, and thus the first area A1 of the display panel 11 does not emit light. Specifically, whether the light compensation unit 130 emits light can be set according to the actual needs of the display device 10.

[0058] In some embodiments, please refer to Figure 1The light supplementing unit 130 includes an electroluminescent layer 131, a first electrode 132 and a second electrode 133, the first electrode 132 and the second electrode 133 are located on two sides of the electroluminescent layer 131 and are connected with the electroluminescent layer 131. Similar to the organic light-emitting diode, the electroluminescent layer 131 can realize light emission under the action of the first electrode 132 and the second electrode 133, wherein the material of the electroluminescent layer 131 can be quantum dots, perovskite, electroluminescent material, etc., but is not limited thereto.

[0059] In some embodiments, referring to Figures 1-2 The light compensation transistor 140 includes a photosensitive layer 141, a third electrode 142 and a fourth electrode 143, the third electrode 142 and the fourth electrode 143 are located on a side of the photosensitive layer 141 away from the first substrate 110 and are connected with the photosensitive layer 141; wherein one of the third electrode 142 and the fourth electrode 143 is an input electrode and the other is an output electrode, the third electrode 142 is electrically connected with one of the first electrode 132 and the second electrode 133, and the fourth electrode 143 is electrically connected with the other of the first electrode 132 and the second electrode 133. For example, the third electrode 142 can be electrically connected with the first electrode 132 through a metal trace, and the fourth electrode 143 can be electrically connected with the second electrode 133 through a metal trace, in this circuit structure, the light compensation transistor 140 is equivalent to a switch, which controls the light emission of the electroluminescent layer 131.

[0060] Wherein the material of the photosensitive layer 141 can be a semiconductor material, such as a-Si, metal oxide (such as IGZO), Poly-Si or a stack of the above materials, but is not limited thereto. The photosensitive layer 141 has stimulated absorption effect under light, and the electrons induced under the driving of external voltage have directional movement to form current, thereby realizing the opening or closing of the light compensation transistor 140. For example, in a dark environment, the light compensation transistor 140 is closed, and the electroluminescent layer 131 does not emit light; in a weak light or strong light environment, the light compensation transistor 140 is opened, and the electroluminescent layer 131 emits light.

[0061] Further, the light compensation transistor 140 can be arranged in the non-display area NA to avoid affecting the aperture ratio and display effect of the display area AA.

[0062] In some embodiments, referring to Figure 1The color film substrate 400 includes a second substrate 410, a light transmission portion 420 and a color filter portion 430 located on the side of the second substrate 410 close to the liquid crystal layer 300, the light transmission portion 420 is located in the first area A1, and the color filter portion 430 is located in the second area A2. The light transmission portion 420 includes a transparent color resist to facilitate the light emitted by the light compensation unit 130; further, the light compensation unit 130 can emit white light to facilitate improving the brightness of the display device 10, while not affecting the display of the sub-pixels in the second area A2. The color filter portion 430 includes at least one of a red color resist 431, a green color resist 432, and a blue color resist 433. The red color resist 431, the green color resist 432, the blue color resist 433, and the transparent color resist are further provided with a black matrix 440.

[0063] Please refer to Figure 1 For example, the color filter portion 430 includes a red color resist 431, a green color resist 432, and a blue color resist 433, that is, the display device 10 includes a red sub-pixel (R), a green sub-pixel (G), a blue sub-pixel (B), and a light compensation sub-pixel (W), one red sub-pixel (R), one green sub-pixel (G), one blue sub-pixel (B), and one light compensation sub-pixel (W) constitute a pixel unit, and the display device 10 can include a plurality of pixel units arranged in an array.

[0064] In some embodiments, please refer to Figure 1 The liquid crystal layer 300 includes liquid crystal and a plurality of isolation columns 310, the plurality of isolation columns 310 are located between the array substrate 100 and the color film substrate 400 and separate the liquid crystal layer 300 into a plurality of liquid crystal sub-portions. For example, the liquid crystal layer 300 can include a first liquid crystal sub-portion 321, a second liquid crystal sub-portion 322, a third liquid crystal sub-portion 323, and a fourth liquid crystal sub-portion 324, wherein the first liquid crystal sub-portion 321 is located in the first area A1 and corresponds to the light transmission portion 420, the second liquid crystal sub-portion 322, the third liquid crystal sub-portion 323, and the fourth liquid crystal sub-portion 324 are located in the second area A2 and correspond to the red color resist 431, the green color resist 432, and the blue color resist 433 one by one, and different liquid crystal sub-portions can be independently controlled by thin film transistors to achieve independent control of each sub-pixel.

[0065] In some embodiments, please refer to Figure 1The thin-film transistor layer 120 further comprises at least one first thin-film transistor 121 and a plurality of second thin-film transistors 122. The first thin-film transistor 121 is electrically connected to the first liquid crystal sub-section 321 in the first area A1 to control the deflection of the liquid crystal in the first liquid crystal sub-section 321. The plurality of second thin-film transistors 122 are respectively electrically connected to the second liquid crystal sub-section 322, the third liquid crystal sub-section 323 and the fourth liquid crystal sub-section 324 in the second area A2, i.e., the second liquid crystal sub-section 322, the third liquid crystal sub-section 323 and the fourth liquid crystal sub-section 324 are respectively provided with one second thin-film transistor 122 to independently control the deflection of the liquid crystal. The first thin-film transistor 121 and the second thin-film transistor 122 each comprise a gate 1231, an active layer 1251 and a source-drain electrode 1241.

[0066] Further, the display panel 11 further comprises a first transparent electrode 510 and a second transparent electrode 520. The first transparent electrode 510 is arranged on the side of the liquid crystal layer 300 close to the thin-film transistor layer 120 and is located in the first area A1. The second transparent electrode 520 is arranged on the side of the liquid crystal layer 300 away from the thin-film transistor layer 120 and is located in the first area A1 and the second area A2, i.e., the second transparent electrode 520 is an integral film layer. The first thin-film transistor 121 is electrically connected to the first transparent electrode 510, and the second thin-film transistor 122 is electrically connected to the semi-transparent and semi-reflective layer 200. In this embodiment, the first liquid crystal sub-section 321 is controlled by the first thin-film transistor 121, and the liquid crystal in the first liquid crystal sub-section 321 is deflected under the electric field action of the first transparent electrode 510 and the second transparent electrode 520 to make the light emitted by the light supplementing unit 130 pass through or not pass through. The second liquid crystal sub-section 322 / third liquid crystal sub-section 323 / fourth liquid crystal sub-section 324 is controlled by the second thin-film transistor 122, and the liquid crystal in the second liquid crystal sub-section 322 / third liquid crystal sub-section 323 / fourth liquid crystal sub-section 324 is deflected under the electric field action of the semi-transparent and semi-reflective layer 200 and the second transparent electrode 520 to make the light emitted by the backlight module 12 or the light reflected by the semi-transparent and semi-reflective layer 200 pass through or not pass through, wherein the semi-transparent and semi-reflective layer 200 comprises a conductive material.

[0067] The material of the first transparent electrode 510 and the second transparent electrode 520 can be ITO, IZO, etc., but is not limited thereto.

[0068] The semi-transparent and semi-reflective layer 200 comprises a reflective area and a transmission area. The reflective area is used to reflect ambient light, and the transmission area is used to transmit the light emitted by the backlight module 12. The material of the reflective area can be a stack of ITO or IZO and Ag, such as ITO / Ag / ITO, IZO / Ag / IZO, etc., but is not limited thereto.

[0069] In the present application, the display device 10 comprises the transflective layer 200 and the backlight module 12, and belongs to the transflective liquid crystal display device 10. The backlight module 12 can provide a backlight source, and the transflective layer 200 can reflect part of light and transmit part of light. When the backlight module 12 is turned on, the transflective layer 200 transmits the backlight, and the transmissive display can be realized; when the backlight module 12 is turned off, the transflective layer 200 reflects ambient light, and the reflective display can be realized.

[0070] In some embodiments, the display device 10 comprises a transmissive display mode, a light compensation reflective display mode and a reflective display mode.

[0071] In a dark environment, the backlight module 12 is turned on, the light compensation transistor 140 is turned off, the first thin film transistor 121 is turned on, and the display device 10 is in the transmissive display mode. In the dark environment, the backlight source is mainly provided by the backlight module 12, so the backlight module 12 is turned on at this time, and the light compensation unit 130 does not need to perform light compensation, so the light compensation transistor 140 is turned off, the light compensation unit 130 does not emit light, that is, the light compensation sub-pixel does not emit light, and the first thin film transistor 121 is turned on, the liquid crystal of the first liquid crystal sub-unit 321 is deflected, and the backlight can be transmitted.

[0072] In a weak light environment, the backlight module 12 is turned off, the light compensation transistor 140 is turned on, the first thin film transistor 121 is turned on, and the display device 10 is in the light compensation reflective display mode. In the weak light environment, the backlight module 12 is turned off, which can avoid the problem that the image of the transmissive area and the image of the reflective area are simultaneously seen, resulting in the reduction of the picture brightness, and can also save the power consumption of the backlight module 12. However, when the backlight module 12 is turned off, the reflected light is insufficient due to the weak ambient light, which can cause the brightness to be dark, so the light compensation transistor 140 is turned on in the weak light environment, the light compensation unit 130 emits light, the first thin film transistor 121 is turned on, the light emitted by the light compensation unit 130 is allowed to transmit through the first liquid crystal sub-unit 321, the light compensation sub-pixel emits light, the light compensation effect is realized, and the brightness of the display device 10 is improved. At the same time, the glare and other display defects caused by the transflective layer 200 in the strong backlight can be avoided.

[0073] In strong light environment, the backlight module 12 is turned off, the light compensation transistor 140 is turned on, and the first thin film transistor 121 is turned off. The display device 10 is in reflective display mode. In strong light environment, the ambient light can be reflected by the semi-transmissive and semi-reflective layer 200 to realize display, so the backlight module 12 does not need to be turned on. At this time, the light compensation transistor 140 is turned on because the light compensation transistor 140 is a photosensitive transistor. In order to reduce the requirement for the material of the photosensitive layer 141, the light compensation transistor 140 is consistent with that in weak light environment. At this time, the light compensation unit 130 emits light, but the first thin film transistor 121 is turned off, the liquid crystal of the first liquid crystal sub-unit 321 does not deflect, and the light emitted by the light compensation unit 130 cannot exit through the liquid crystal layer 300, that is, the light compensation sub-pixel does not emit light and does not affect the display of the sub-pixels in the second area A2.

[0074] In the above-mentioned transmissive display mode, light compensation reflective display mode, and reflective display mode, the red sub-pixel (R), green sub-pixel (G), and blue sub-pixel (B) in the second area A2 are controlled by the second thin film transistor 122 respectively, and normal display is realized.

[0075] In some embodiments, the backlight module 12 can also be controlled by a photosensitive transistor, but the opening logic of the photosensitive transistor is opposite to that of the light compensation transistor 140. That is, when the photosensitive transistor is turned on, the backlight module 12 is turned off, the backlight module 12 does not emit light, when the photosensitive transistor is turned off, the backlight module 12 is turned on, and the backlight module 12 emits light. Specifically, the opening and closing logic of the backlight module 12 and the light compensation unit 130 can be opposite through circuit design. The photosensitive transistor can be arranged in the non-display area NA or integrated on a chip, which is not limited in the present application.

[0076] In some embodiments, please refer to Figure 1 The thin film transistor layer 120 includes a first metal layer 123 and a second metal layer 124. The first metal layer 123 includes a gate 1231. The semiconductor layer 125 is arranged on the side of the first metal layer 123 away from the first substrate 110, and includes an active layer 1251 and a photosensitive layer 141. The second metal layer 124 is arranged on the side of the active layer 1251 away from the first substrate 110, and the second metal layer 124 includes a source / drain 1241, a first electrode 132, a second electrode 133, a third electrode 142, and a fourth electrode 143. In the present embodiment, the active layer 1251 and the photosensitive layer 141 are arranged in the same layer by the same process, and the source / drain 1241, the first electrode 132, the second electrode 133, the third electrode 142, and the fourth electrode 143 are arranged in the same layer by the same process, which can simplify the process and reduce the cost.

[0077] In some embodiments, please refer to Figure 1 and Figure 3The first metal layer 123 further includes scan lines 1233 and data lines 1232, which are arranged in a cross manner to define a plurality of sub-pixels. Further, the first metal layer 123 further includes a metal connecting line 1234, the second electrode 133 of the light compensation unit 130 is electrically connected to the metal connecting line 1234 through a via hole on the gate insulating layer 126, and the metal connecting line 1234 is connected to the fourth electrode 143 of the light compensation transistor 140, that is, the second electrode 133 and the fourth electrode 143 are electrically connected through the metal connecting line 1234; the first electrode 132 of the light compensation unit 130 is electrically connected to the data line 1232, and the data line 1232 is connected to the third electrode 142 of the light compensation transistor 140, that is, the first electrode 132 and the third electrode 142 are electrically connected through the data line 1232. Thus, the circuit connection between the light compensation unit 130 and the light compensation transistor 140 is realized, and the control of the light compensation transistor 140 on the light compensation unit 130 is realized.

[0078] In some embodiments, the thin film transistor layer 120 further includes a gate insulating layer 126, which is arranged between the first metal layer 123 and the semiconductor layer 125.

[0079] The thin film transistor layer 120 further includes a protective layer 127, which is arranged on a side of the second metal layer 124 away from the semiconductor layer 125. The protective layer 127 can include one or more film layers. For example, the protective layer 127 can include a first inorganic insulating layer, a planarization layer, and a second inorganic insulating layer. The first inorganic insulating layer is arranged on a side of the second metal layer 124 away from the semiconductor layer 125, the planarization layer is arranged on a side of the first inorganic insulating layer away from the second metal layer 124, and the second inorganic insulating layer is arranged on a side of the planarization layer away from the first inorganic insulating layer.

[0080] In some embodiments, the display device 10 further includes an upper polarizer 600 and a cover plate 700. The upper polarizer 600 is arranged on a side of the color film substrate 400 away from the liquid crystal layer 300, and the cover plate 700 is arranged on a side of the upper polarizer 600 away from the color film substrate 400.

[0081] The present application also provides a preparation method of the display device 10, which includes:

[0082] S1, preparation of the array substrate 100;

[0083] S11, referring to Figure 4 A first substrate 110 is provided, a first metal material is deposited on the first substrate 110, and a first metal layer 123 is formed by patterning. The first metal layer 123 includes a gate 1231, a metal connecting line 1234, scan lines 1233, and data lines 1232.

[0084] The first substrate 110 can be a glass substrate or a flexible substrate, the first metal material is deposited by a physical vapor deposition method, and the first metal layer 123 is patterned by a photolithography process, and the thickness of the first metal layer 123 is 0.1-0.8 μm.

[0085] S12, please refer to Figure 5 The gate insulating layer 126 and the initial semiconductor layer are sequentially formed above the first metal layer 123.

[0086] The material of the gate insulating layer 126 can be SiNx, SiOx, SiOxNx or a stack of the above materials, and the thickness of the gate insulating layer 126 is 0.1-0.5 μm. The material of the initial semiconductor layer can be a-Si, metal oxide (such as IGZO), Poly-Si or a stack of the above materials, and the gate insulating layer 126 and the initial semiconductor layer are deposited by a chemical vapor deposition method.

[0087] S13, please refer to Figure 6 The initial semiconductor layer is patterned to form the semiconductor layer 125, and the semiconductor layer 125 includes the active layer 1251 and the photosensitive layer 141.

[0088] The initial semiconductor layer is patterned by a photolithography process, and the active layer 1251 and the photosensitive layer 141 are formed by dry etching, and the etching gas can be NF3, SF6 or CF x .

[0089] S14, please refer to Figure 7 The second metal material is deposited above the semiconductor layer 125 and the gate insulating layer 126, and the second metal layer 124 is patterned to form the source-drain electrode 1241, the first electrode 132, the second electrode 133, the third electrode 142 and the fourth electrode 143.

[0090] The second metal material is deposited by a physical vapor deposition method, and the second metal layer 124 is patterned by a photolithography process, and the thickness of the first metal layer 123 is 0.1-0.3 μm.

[0091] S15, please refer to Figure 8 The electroluminescent layer 131 is formed above the gate insulating layer 126, and the electroluminescent layer 131 is located in the first area A1.

[0092] The material of the electroluminescent layer 131 can be quantum dots, perovskite, electroluminescent material, and the electroluminescent layer 131 is formed by an inkjet printing, screen printing, coating process and a yellow light process+dry etching method.

[0093] S16, please refer to Figure 9Then, a first inorganic insulating layer, a planar layer and a second inorganic insulating layer are sequentially formed and are patterned to form a via hole, and the first inorganic insulating layer, the planar layer and the second inorganic insulating layer constitute a protective layer 127.

[0094] The material of the first inorganic insulating layer and the second inorganic insulating layer can be SiNx, SiOx, SiOxNx or a stack of the above materials; and the material of the planar layer can be a high-transmittance organic photoresist.

[0095] S17, please refer to Figure 10 A first transparent electrode 510 and a semi-transparent and semi-reflective layer 200 are formed on the second inorganic insulating layer, the first transparent electrode 510 is located in the first area A1, and the semi-transparent and semi-reflective layer 200 is located in the second area A2.

[0096] The semi-transparent and semi-reflective layer 200 is formed by a physical vapor deposition method, the thickness of the semi-transparent and semi-reflective layer 200 is 0.1 μm-0.3 μm, the semi-transparent and semi-reflective layer 200 includes a reflective area and a transmission area, the material of the reflective area can be ITO / Ag / ITO, IZO / Ag / IZO or the like, and the material of the transmission area can be ITO, IZO or the like transparent conductive material; by a half-tone photoetching process, the reflective layer such as Ag located in the first area A1 is removed, and the transparent electrode part is reserved as the first transparent electrode 510.

[0097] S2, preparation of the color film substrate 400;

[0098] S21, please refer to Figure 11 A second substrate 410 is provided, and a black matrix 440 is formed on the second substrate 410.

[0099] The black matrix 440 is formed by coating, exposure, development and baking, and the material of the black matrix 440 is black organic photoresist.

[0100] S22, please refer to Figure 12 Red color resist 431, green color resist 432, blue color resist 433 and transparent color resist are formed between the black matrix 440, the transparent color resist is located in the first area A1, and the red color resist 431, the green color resist 432 and the blue color resist 433 are located in the second area A2.

[0101] S23, please refer to Figure 13 A second transparent electrode 520 is formed on the red color resist 431, the green color resist 432, the blue color resist 433 and the transparent color resist.

[0102] The second transparent electrode 520 is formed by a physical vapor deposition method, and is crystallized by baking to improve the conductivity, and the material of the second transparent electrode 520 can be ITO.

[0103] S24, please refer to Figure 14 The isolation column 310 is formed on the second transparent electrode 520.

[0104] The isolation column 310 is formed by coating, exposure, development and baking.

[0105] S3, please refer to Figure 15 After the array substrate 100 and the color film substrate 400 are oriented and assembled, liquid crystal is injected to form the display panel 11.

[0106] S4, please refer to Figure 1 The polarizer 600 is attached to the surface of the display panel 11, and the display device 10 is assembled with the backlight module 12, the connecting member, the peripheral circuit for control and driving, the PCB circuit board and the structural member.

[0107] The display device provided by the application is a transflective liquid crystal display device, compared with the transflective liquid crystal display device in the prior art, the display device provided by the application is additionally provided with a first area (equivalent to a light compensation area), the first area is provided with a light compensation sub-pixel, the light compensation sub-pixel comprises a light compensation unit, in addition, the thin film transistor layer is further provided with a light compensation transistor, the light compensation transistor is electrically connected with the light compensation unit to control the light compensation unit to emit light, therefore, by using the display device provided by the application, the light compensation unit can be turned on in a weak light environment to improve the brightness of the display device, meanwhile, the backlight source can be turned off to avoid the display defects such as glare caused by the transflective layer under strong backlight, and the power consumption of the backlight module can be reduced.

[0108] In the description of the application, the terms "first", "second" are only used for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0109] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0110] The application embodiments, implementation manners and related technical features can be combined or replaced with each other without conflict.

[0111] The above are only the preferred embodiments of the present application, and do not limit the present application in any form, but any simple modification, equivalent change and modification made to the above embodiments without departing from the technical solution of the present application and according to the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A display device, characterized in that: It includes a backlight module and a display panel arranged on the light-emitting side of the backlight module, and the display panel includes: An array substrate comprising a first substrate and a thin film transistor layer, wherein the thin film transistor layer is arranged on a side of the first substrate away from the backlight module; a semi-transmissive and semi-reflective layer, disposed on a side of the array substrate away from the backlight module; a liquid crystal layer, disposed on a side of the transflective layer away from the array substrate; and A color filter substrate is provided on a side of the liquid crystal layer away from the semi-transmissive and semi-reflective layer; The display panel includes a display area, the display area includes a first area and a second area adjacent to the first area, the first area includes a light compensation sub-pixel, and the second area includes at least one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel; The light compensation sub-pixel includes a fill light unit, which is arranged on a side of the first substrate close to the liquid crystal layer. The thin film transistor layer includes a light compensation transistor, and the fill light unit is electrically connected to the light compensation transistor. The semi-transmissive and semi-reflective layer is arranged in the second area.

2. The display device according to claim 1, wherein The light-filling unit includes an electroluminescent layer, a first electrode and a second electrode. The first electrode and the second electrode are located on both sides of the electroluminescent layer and are connected to the electroluminescent layer.

3. The display device according to claim 2, wherein: The light compensation transistor includes a photosensitive layer, a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are located on a side of the photosensitive layer away from the first substrate and are connected to the photosensitive layer; The third electrode is electrically connected to one of the first electrode and the second electrode, and the fourth electrode is electrically connected to the other of the first electrode and the second electrode.

4. The display device according to claim 3, wherein: The thin film transistor layer further includes at least one first thin film transistor and a plurality of second thin film transistors; The display panel further includes a first transparent electrode and a second transparent electrode, wherein the first transparent electrode is disposed on a side of the liquid crystal layer close to the thin film transistor layer and located in the first area, and the second transparent electrode is disposed on a side of the liquid crystal layer away from the thin film transistor layer and located in the first area and the second area; The first thin film transistor is electrically connected to the first transparent electrode, and the second thin film transistor is electrically connected to the semi-transmissive and semi-reflective layer.

5. The display device according to claim 4, wherein: The display device includes a transmissive display mode, a light-compensating reflective display mode, and a reflective display mode; In a dark environment, the backlight module is turned on, the light compensation transistor is turned off, the first thin film transistor is turned on, and the display device is in a transmissive display mode; In a weak light environment, the backlight module is turned off, the light compensation transistor is turned on, the first thin film transistor is turned on, and the display device is in a light compensation reflective display mode; In a strong light environment, the backlight module is turned off, the light compensation transistor is turned on, the first thin film transistor is turned off, and the display device is in a reflective display mode.

6. The display device according to claim 3, wherein: The thin film transistor layer includes: a first metal layer including a gate; a second metal layer, disposed on a side of the first metal layer away from the first substrate; The second metal layer includes a source and a drain as well as the first electrode, the second electrode, the third electrode and the fourth electrode.

7. The display device according to claim 6, wherein: The thin film transistor layer further includes a semiconductor layer, which is arranged on a side of the first metal layer away from the first substrate; Wherein, the semiconductor layer includes an active layer and the photosensitive layer.

8. The display device according to claim 1, wherein The color filter substrate includes a light-transmitting portion and a color filter portion; The light-transmitting portion is located in the first area, and the light-transmitting portion includes a transparent color resist; The color filter portion is located in the second area, and the color filter portion includes at least one of a red color resist, a green color resist, and a blue color resist.

9. The display device according to claim 1, wherein The display panel further includes a non-display area, the non-display area is adjacent to the display area, and the light compensation transistor is disposed in the non-display area.

10. The display device according to claim 2, wherein The electroluminescent layer emits white light.

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