Magnetic storage unit and device based on signal time delay

Abstract

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a magnetic storage unit and device based on signal time delay. BACKGROUND

[0002] Magnetic random access memory (MRAM) takes a magnetic tunnel junction (MTJ) as a core device, has the advantages of low power consumption, non-volatile storage, and fast writing speed, and is expected to become the next generation of general-purpose memory and thus solve the above performance bottleneck. The third generation of MRAM adopts a spin orbit torque (SOT) writing technology, which can solve the problems existing in the spin-transfer torque (STT) writing technology of STT-MRAM. The SOT-MTJ is not easy to break down, has high reliability, and has separated read and write paths, which can be optimized independently. In particular, for the magnetic tunnel junction with perpendicular magnetic anisotropy (PMA) commonly used at present, the writing speed of SOT-MRAM is expected to reach sub-nanosecond level.

[0003] When data is written, in order to achieve deterministic flipping of the MTJ by using SOT, an external magnetic field is usually needed for assistance, and the use of the magnetic field will make the design of the MRAM circuit more complicated and cause additional area and power consumption overhead. SUMMARY

[0004] One object of the present application is to provide a magnetic storage unit based on signal time delay, which can achieve deterministic writing of a magnetic tunnel junction without an external auxiliary magnetic field, simplify the device structure, and reduce the area and power consumption overhead. Another object of the present application is to provide a magnetic storage device.

[0005] In order to achieve the above objects, one aspect of the present application discloses a magnetic storage unit based on signal time delay, comprising a first spin orbit torque layer and a first magnetic tunnel junction disposed on the first spin orbit torque layer.

[0006] The distance between the first magnetic tunnel junction and the first spin orbit torque layer at both ends is a first distance and a second distance, respectively, and the first distance and the second distance are not equal.

[0007] A first pulse signal and a second pulse signal are input from both ends of the first spin orbit torque layer along the first distance and the second distance, respectively.

[0008] The first pulse signal and the second pulse signal form a first write spin transfer torque current at the first magnetic tunnel junction due to signal time delay to make the first magnetic tunnel junction free layer magnetic moment flip under the action of the first write spin transfer torque current.

[0009] Optionally, the first distance is greater than the second distance.

[0010] When the first pulse signal is positive and the second pulse signal is negative, the first magnetic tunnel junction forms two spin transfer torque currents of negative and positive in sequence, and the positive spin transfer torque current is the first write spin transfer torque current.

[0011] When the first pulse signal is negative and the second pulse signal is positive, the first magnetic tunnel junction forms two spin transfer torque currents of positive and negative in sequence, and the negative spin transfer torque current is the first write spin transfer torque current.

[0012] Optionally, further comprising a second magnetic tunnel junction.

[0013] The second magnetic tunnel junction and the first spin orbit torque layer have a third distance and a fourth distance between the two ends, respectively.

[0014] The first distance is greater than the second distance, and the third distance is less than the fourth distance.

[0015] The polarities of the first pulse signal and the second pulse signal are opposite, and the first pulse signal and the second pulse signal form first write spin transfer torque currents of opposite polarities at the first magnetic tunnel junction and the second magnetic tunnel junction due to signal time delay.

[0016] Optionally, the potential difference between the top end and the bottom end of the first magnetic tunnel junction is 0.

[0017] Optionally, the polarities of the first pulse signal and the second pulse signal are opposite, and the ratio of the first pulse signal and the second pulse signal is the same as the ratio of the corresponding first distance and the second distance.

[0018] Optionally, the top of the first magnetic tunnel junction is connected to a preset voltage, and the voltage value of the preset voltage is obtained based on the first pulse signal and the second pulse signal.

[0019] Optionally, the voltages of the first pulse signal and the second pulse signal at the first magnetic tunnel junction are first voltage and second voltage, respectively.

[0020] The voltage value of the preset voltage is the difference between the first voltage and the second voltage.

[0021] Optionally, a second spin-orbit torque layer is further included, and the first magnetic tunnel junction is arranged at the intersection of the first spin-orbit torque layer and the second spin-orbit torque layer.

[0022] The first magnetic tunnel junction and the two ends of the second spin-orbit torque layer are respectively a fifth distance and a sixth distance, and the fifth distance and the sixth distance are not equal.

[0023] Optionally, a third pulse signal and a fourth pulse signal with opposite polarities are input from the two ends of the second spin-orbit torque layer along the fifth distance and the sixth distance, respectively.

[0024] The second write spin transfer torque current formed at the first magnetic tunnel junction due to signal time delay and the first write spin transfer torque current have opposite polarities.

[0025] The application also discloses a magnetic storage device comprising the signal time delay-based magnetic storage unit.

[0026] The signal time delay-based magnetic storage unit comprises a first spin-orbit torque layer and a first magnetic tunnel junction arranged on the first spin-orbit torque layer. The first magnetic tunnel junction and the two ends of the first spin-orbit torque layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal. Then, a first pulse signal and a second pulse signal are input from the two ends of the first spin-orbit torque layer along the first distance and the second distance, respectively, to form a first write spin transfer torque current at the first magnetic tunnel junction due to signal time delay. The combination of SOT and STT realizes the deterministic flipping of the free layer magnetic moment of the first magnetic tunnel junction, and data writing is completed. The data writing of the magnetic storage unit does not need the assistance of an external magnetic field, does not need to arrange a complex peripheral circuit, simplifies the device structure, and reduces the overhead of area and power consumption. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description only constitute some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0028] Figure 1 The schematic diagram of the specific embodiment of the signal time delay-based magnetic storage unit is shown.

[0029] Figure 2 The schematic diagram of the signal time delay-based magnetic storage unit is shown.

[0030] Figure 3 Fig. 1 shows a schematic diagram of a signal time delay based magnetic memory cell embodiment SOT and STT of the present application;

[0031] Figure 4 Fig. 2 shows a schematic diagram of a signal time delay based magnetic memory cell embodiment STT instrument test results of the present application;

[0032] Figure 5 Fig. 3 shows a schematic diagram of a signal time delay based magnetic memory cell embodiment SOT and STT of the present application;

[0033] Figure 6 Fig. 4 shows a schematic diagram of a signal time delay based magnetic memory cell embodiment setting a predetermined voltage of the present application;

[0034] Figure 7 Fig. 5 shows a schematic diagram of a signal time delay based magnetic memory cell embodiment setting a second spin orbit moment layer of the present application;

[0035] Figure 8 Fig. 6 shows a schematic diagram of a computer device comprising an embodiment of the present application.

[0036] Reference signs:

[0037] 1, reference layer, 2, barrier layer, 3, free layer, 4, first end, 5, second end, 6, first spin orbit moment layer, 7, second spin orbit moment layer, 8, third end, 9, fourth end. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be apparently and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work belong to the protection scope of the present application.

[0039] It should be noted that the terms "first", "second" and the like in the description and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented. In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device comprising a series of steps or units does not necessarily limit to those clearly listed steps or units, but can include other steps or units not clearly listed or inherent to the process, method, product or device.

[0040] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not intended to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0041] The positional relationship such as "parallel" or "perpendicular" not only includes the positional relationship of complete "parallel" or "perpendicular", but also includes the positional relationship within a preset deviation range relative to the angle of complete "parallel" or "perpendicular".

[0042] In addition, in addition to being used to indicate the orientation or positional relationship, the above-mentioned partial terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those skilled in the art, the specific meaning of these terms in the present application can be understood according to the specific situation.

[0043] In addition, the terms "mount", "set", "provided with", "connected", "connected", "sleeved" should be broadly understood. For example, it can be fixedly connected, detachably connected, or integrally constructed; it can be mechanically connected or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or internal communication between two devices, elements or components. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific situation.

[0044] It should be noted that in one or more embodiments of the present application, STT refers to spin transfer torque, a technology that can cause the magnetic moment of a magnetic tunnel junction device to flip. SOT refers to spin orbit torque, a technology that has a layer of heavy metal under the magnetic tunnel junction, and the current flowing through the heavy metal layer causes the magnetic moment of the magnetic tunnel junction to flip, which generally requires an external magnetic field to assist.

[0045] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0046] According to one aspect of the present application, the present embodiment discloses a magnetic storage unit based on signal delay. As shown in Figure 1 In the present embodiment, the magnetic storage unit includes a first spin orbit torque layer 6 and a first magnetic tunnel junction MTJ1 disposed on the first spin orbit torque layer 6.

[0047] The first magnetic tunnel junction MTJ1 is apart from the first spin orbit torque layer 6 by a first distance L1 and a second distance L2, the first distance L1 and the second distance L2 are not equal; a first pulse signal ISOT1 and a second pulse signal ISOT2 are input from the two ends of the first spin orbit torque layer 6 along the first distance L1 and the second distance L2 respectively; the first pulse signal ISOT1 and the second pulse signal ISOT2 form a first write spin transfer torque current ISTT at the first magnetic tunnel junction MTJ1 due to signal time delay to make the magnetic moment of the free layer 3 of the first magnetic tunnel junction MTJ1 flip deterministically under the action of the first write spin transfer torque current ISTT.

[0048] The magnetic storage unit based on signal time delay includes a first spin orbit torque layer 6 and a first magnetic tunnel junction MTJ1 arranged on the first spin orbit torque layer 6. The first magnetic tunnel junction MTJ1 is apart from the first spin orbit torque layer 6 by a first distance L1 and a second distance L2, the first distance L1 and the second distance L2 are not equal; a first pulse signal ISOT1 and a second pulse signal ISOT2 are input from the two ends of the first spin orbit torque layer 6 along the first distance L1 and the second distance L2 respectively. The first pulse signal ISOT1 and the second pulse signal ISOT2 form a SOT current input to the first spin orbit torque layer 6. Due to the difference between the first distance L1 and the second distance L2, the first pulse signal ISOT1 and the second pulse signal ISOT2 will form two longitudinal spin transfer torque currents at the first magnetic tunnel junction MTJ1 when the first pulse signal arrives and disappears due to the different time of arrival at the first magnetic tunnel junction MTJ1. The second longitudinal spin transfer torque current plays a decisive role in the flip of the free layer 3 of the magnetic tunnel junction, that is, the first write spin transfer torque current ISTT to make the magnetic moment of the free layer 3 of the first magnetic tunnel junction MTJ1 flip deterministically. The data writing of the magnetic storage unit of the application does not need the assistance of external magnetic field, does not need to set complex peripheral circuit, simplifies the device structure, reduces the area and power consumption.

[0049] Wherein, it can be understood that the first magnetic tunnel junction MTJ1 on the magnetic storage unit is at a first distance L1 from the first end 4 of the first spin-orbit torque layer 6 and at a second distance L2 from the second end 5, and the first distance L1 is not the same as the second distance L2. Assuming that the first distance L1 is greater than the second distance L2, since the second end 5 is closer to the first magnetic tunnel junction MTJ1, the second pulse signal ISOT2 input by the second end 5 first reaches the first magnetic tunnel junction MTJ1, and the first pulse signal ISOT1 reaches the first magnetic tunnel junction MTJ1 after a time delay. Wherein, when only the second pulse signal ISOT2 reaches the first magnetic tunnel junction MTJ1, a first spin transfer torque current in the longitudinal direction is formed at the first magnetic tunnel junction MTJ1, and the polarity of the first spin transfer torque current is the same as that of the second pulse signal ISOT2. When the second pulse signal ISOT2 disappears, the first pulse signal ISOT1 has not disappeared due to the time delay, at this time, only the first pulse signal ISOT1 is present at the first magnetic tunnel junction MTJ1, and a second spin transfer torque current is formed at the first magnetic tunnel junction MTJ1 under the action of the first pulse signal ISOT1, and the polarity of the second spin transfer torque current is the same as that of the first pulse signal ISOT1. Conversely, if the first distance L1 is less than the second distance L2, the polarity of the first spin transfer torque current is the same as that of the first pulse signal ISOT1, and the polarity of the second spin transfer torque current is the same as that of the second pulse signal ISOT2.

[0050] It can be understood that the magnetic tunnel junction generally includes a reference layer 1, a barrier layer 2 and a free layer 3 arranged in sequence from top to bottom. The bottom surface of the free layer 3 is fixedly connected with the spin-orbit torque layer. The resistance of the magnetic tunnel junction depends on the magnetization direction of the reference layer 1 and the free layer 3, and the magnetization direction of the free layer 3 and the reference layer 1 is determined by the magnetic moment direction. Wherein, when the magnetic moment directions of the reference layer 1 and the free layer 3 are the same, the magnetic tunnel junction is in a low resistance state (low resistance state), and when the magnetic moment directions of the reference layer 1 and the free layer 3 are opposite, the magnetic tunnel junction is in a high resistance state (high resistance state). The high resistance state and the low resistance state of the magnetic tunnel junction can be pre-corresponded to different data respectively, for example, the high resistance state is pre-set to correspond to data "1", and the low resistance state is pre-set to correspond to data "0", then the current or voltage is input to the magnetic tunnel junction through the reading circuit, and according to the change of the current or voltage, it can be determined whether the resistance state of the magnetic tunnel junction is the high resistance state or the low resistance state, and according to the resistance state of the magnetic tunnel junction, it can be determined whether the data stored in the magnetic tunnel junction is "1" or "0". Wherein, the range of the high resistance state and the low resistance state is determined as a common technical means in the art, and those skilled in the art can determine the resistance value range of the high resistance state and the low resistance state of the magnetic tunnel junction according to the common knowledge, which will not be described herein.

[0051] The first application of the SOT current formed by the first pulse signal ISOT1 and the second pulse signal ISOT2 is conducive to faster nucleation of the magnetic domain in the magnetic free layer 3, and the delayed removal of the STT current after the end of the SOT pulse produces a sharp pulse at the MTJ, which is conducive to the stability of the state of the magnetic moment in the free layer 3 to achieve deterministic writing, so the staggered application of the SOT and STT currents is conducive to reducing the switching current while improving the switching probability, and efficient field-free.

[0052] In an optional embodiment, the first distance L1 is greater than the second distance L2. When the first pulse signal ISOT1 is positive and the second pulse signal ISOT2 is negative, two spin transfer torque currents of negative and positive are formed in the first magnetic tunnel junction MTJ1 in sequence, and the positive spin transfer torque current is the first write spin transfer torque current ISTT. When the first pulse signal ISOT1 is negative and the second pulse signal ISOT2 is positive, two spin transfer torque currents of positive and negative are formed in the first magnetic tunnel junction MTJ1 in sequence, and the negative spin transfer torque current is the first write spin transfer torque current ISTT.

[0053] In a specific example, as shown in the figure, the first distance L1 is greater than the second distance L2, and the first magnetic tunnel junction MTJ1 is arranged on the right side of the first spin orbit torque layer 6, that is, the distance between the first magnetic tunnel junction MTJ1 and the second end 5 of the first spin orbit torque layer 6 is closer. Figure 1

[0054] It is assumed that the direction from left to right is positive, and vice versa. When the input first pulse signal ISOT1 is positive and the second pulse signal ISOT2 is negative, the second pulse signal ISOT2 first reaches the first magnetic tunnel junction MTJ1, first forming a negative spin transfer torque current, and the first pulse signal ISOT1 disappears after a time delay after the second pulse signal ISOT2 disappears, forming a positive spin transfer torque current at the first magnetic tunnel junction MTJ1, which is the first write spin transfer torque current ISTT that determines the final direction of the magnetic moment of the free layer 3.

[0055] Conversely, when the input first pulse signal ISOT1 is negative and the second pulse signal ISOT2 is positive, the second pulse signal ISOT2 first reaches the first magnetic tunnel junction MTJ1, first forming a positive spin transfer torque current, and the first pulse signal ISOT1 disappears after a time delay after the second pulse signal ISOT2 disappears, forming a negative spin transfer torque current at the first magnetic tunnel junction MTJ1, which is the first write spin transfer torque current ISTT that determines the final direction of the magnetic moment of the free layer 3.

[0056] ​It should be noted that in some embodiments, the polarities of the first pulse signal ISOT1 and the second pulse signal ISOT2 can also be positive at the same time or negative at the same time, and the polarity of the spin transfer torque current at the first magnetic tunnel junction MTJ1 can be determined according to the signal time delay according to the same principle, which will not be described here.

[0057] In an optional embodiment, as shown in Figure 2 The magnetic storage unit also includes a second magnetic tunnel junction MTJ2. The second magnetic tunnel junction MTJ2 is spaced apart from the first spin orbit torque layer 6 by a third distance L3 and a fourth distance L4. The first distance L1 is greater than the second distance L2, and the third distance L3 is less than the fourth distance L4. The polarities of the first pulse signal ISOT1 and the second pulse signal ISOT2 are opposite, and the first pulse signal ISOT1 and the second pulse signal ISOT2 form first write spin transfer torque currents ISTT of opposite polarities at the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 due to signal time delay.

[0058] Specifically, in order to improve the storage density of the magnetic storage unit, two or more second magnetic tunnel junctions MTJ2 can be provided on a first spin orbit torque layer 6. The third distance L3 and the fourth distance L4 between the second magnetic tunnel junction MTJ2 and the first spin orbit torque layer 6 are also not equal, so that the second magnetic tunnel junction MTJ2 can also realize the deterministic flipping of the free layer 3 magnetic moment through the longitudinal spin transfer torque current formed at the second magnetic tunnel junction MTJ2 due to the time delay of the pulse signals input from both ends of the first spin orbit torque layer 6.

[0059] In this optional embodiment, the third distance L3 between the second magnetic tunnel junction MTJ2 and the first spin orbit torque layer 6 is less than the fourth distance L4, and the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are arranged on the two sides close to the two ends of the first spin orbit torque layer 6. When the polarities of the first pulse signal ISOT1 and the second pulse signal ISOT2 are opposite, the first pulse signal ISOT1 and the second pulse signal ISOT2 are simultaneously input from the first end 4 and the second end 5 of the first spin orbit torque layer 6. The polarities of the pulse signals first reaching the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are opposite, i.e. the polarities of the first write spin transfer torque currents ISTT formed at the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are opposite.

[0060] The final magnetic moment direction of the two magnetic tunnel junction free layers 3 under the action of the first write spin transfer torque current ISTT with opposite polarities and the magnetic moment direction of the reference layer 1 can be set to realize the writing of different data pair combinations. For example, under the action of the first write spin transfer torque current ISTT with opposite polarities, the magnetic moments of the free layers 3 of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 are opposite after the deterministic flipping, the magnetic moment directions of the reference layer 1 are the same, and the opposite resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 can be changed by the first pulse signal ISOT1 and the second pulse signal ISOT2, so that the opposite data pair combinations are written into the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2, for example, (0, 1); when the magnetic moment directions of the reference layer 1 are opposite, the magnetic moment directions of the free layers 3 after writing are also opposite, and the resistance states of the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 can be made the same by the first pulse signal ISOT1 and the second pulse signal ISOT2, so that the purpose of writing the opposite data pair combinations into the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2 is achieved, for example, (0, 0).

[0061] In an optional embodiment, the potential difference between the top end and the bottom end of the first magnetic tunnel junction MTJ1 is 0. In order to avoid the damage to the magnetic tunnel junction caused by the excessive longitudinal voltage formed by the first pulse signal ISOT1 and the second pulse signal ISOT2 at the first magnetic tunnel junction MTJ1, the polarity of the first pulse signal ISOT1 and the second pulse signal ISOT2 is opposite, and the voltage is adjusted, so that the voltage at the magnetic tunnel junction is 0 when the first pulse signal ISOT1 and the second pulse signal ISOT2 act; or the voltage at the top of the first magnetic tunnel junction MTJ1, the polarity of the first pulse signal ISOT1 and the second pulse signal ISOT2, and the voltage are combined to make the potential difference of the magnetic tunnel junction in the longitudinal direction 0.

[0062] In an optional embodiment, the polarity of the first pulse signal ISOT1 and the second pulse signal ISOT2 is opposite, and the ratio of the first pulse signal ISOT1 and the second pulse signal ISOT2 is the same as the ratio of the corresponding first distance L1 and the second distance L2.

[0063] Specifically, in order to make the potential difference between the top end and the bottom end of the magnetic tunnel junction 0, the polarity of the first pulse signal ISOT1 and the second pulse signal ISOT2 is opposite, and the voltage of the first pulse signal ISOT1 and the second pulse signal ISOT2 is set, so that the voltage superimposed by the first pulse signal ISOT1 and the second pulse signal ISOT2 at the first magnetic tunnel junction MTJ1 is 0.

[0064] For example, for Figure 1The magnetic storage unit can be set with the first pulse signal ISOT1 being positive and the second pulse signal ISOT2 being negative, and the ratio of the first pulse signal ISOT1 to the second pulse signal ISOT2 is equal to the ratio of the first distance L1 and the second distance L2. Then, according to the voltage divider principle, the voltage at the first magnetic tunnel junction MTJ1 is 0.

[0065] In this embodiment, since the first distance L1 is greater than the second distance L2, the first pulse signal ISOT1 is greater than the second pulse signal ISOT2, and the polarities of the first pulse signal ISOT1 and the second pulse signal ISOT2 are opposite. Therefore, in this embodiment, the SOT current and STT current only exist in two cases: one is that the positive first pulse signal ISOT1 and the negative second pulse signal ISOT2 form a positive SOT current, and the negative and positive spin-transfer torque currents are formed sequentially at the first magnetic tunnel junction MTJ1 over time, such as... Figure 3 As shown, the instrument test results are as follows: Figure 4 As shown; another method involves a negative first pulse signal ISOT1 and a positive second pulse signal ISOT2 forming a negative SOT current, which in turn generates positive and negative spin-transfer torque currents at the first magnetic tunnel junction MTJ1 over time, as shown. Figure 5 As shown.

[0066] In another alternative implementation, such as Figure 6 As shown, a preset voltage V3 is connected to the top of the first magnetic tunnel junction MTJ1. The voltage value of the preset voltage V3 is obtained based on the first pulse signal ISOT1 and the second pulse signal ISOT2.

[0067] Specifically, to ensure that the potential difference between the top and bottom of the magnetic tunnel junction is zero, a preset voltage V3 can be applied to the top of the first magnetic tunnel junction MTJ1. This preset voltage V3 is made the same as the voltage difference formed at the first magnetic tunnel junction MTJ1 by the first pulse signal ISOT1 and the second pulse signal ISOT2, thus ensuring that the potential difference between the top and bottom of the first magnetic tunnel junction MTJ1 is zero and preventing damage to the magnetic tunnel junction. In this embodiment, the first pulse signal ISOT1 and the second pulse signal ISOT2 do not need to be set to opposite polarities, and the magnitude of the voltage is not limited. This allows for the selection of more forms of the first pulse signal ISOT1 and the second pulse signal ISOT2 according to actual conditions, reducing application limitations, facilitating flexible configuration of peripheral circuits, and enabling data writing under different SOT and STT synergistic effects.

[0068] In an optional embodiment, the voltages of the first pulse signal ISOT1 and the second pulse signal ISOT2 at the first magnetic tunnel junction MTJ1 are a first voltage V1 and a second voltage V2, respectively; the voltage value of the preset voltage V3 is the difference between the first voltage V1 and the second voltage V2.

[0069] Specifically, the voltage value and polarity of the preset voltage V3 can be determined based on the voltage difference between the first pulse signal ISOT1 and the second pulse signal ISOT2. Furthermore, the duration of the preset voltage V3 needs to match the duration of the first pulse signal ISOT1 and the second pulse signal ISOT2 to protect the magnetic tunnel junction from damage and to avoid affecting data writing.

[0070] In alternative implementations, such as Figure 7 As shown, the magnetic storage cell further includes a second spin-orbit layer 7. The first magnetic tunnel junction MTJ1 is disposed at the intersection of the first spin-orbit layer 6 and the second spin-orbit layer 7; the two ends of the first magnetic tunnel junction MTJ1 and the second spin-orbit layer 7 are respectively a fifth distance L5 and a sixth distance L6, and the fifth distance L5 and the sixth distance L6 are not equal.

[0071] Specifically, the first magnetic tunnel junction MTJ1 is located at the intersection of the first spin-orbit moment layer 6 and the second spin-orbit moment layer 7 in two different directions. The writing of the first magnetic tunnel junction MTJ1 can be achieved by inputting the first pulse signal ISOT1 and the second pulse signal ISOT2 into one of the spin-orbit moment layers 6 and 7.

[0072] In some embodiments, if at least one second magnetic tunnel junction (MTJ2) is also provided on the first spin orbital layer 6, the input of the first pulse signal ISOT1 and the second pulse signal ISOT2 will simultaneously affect the data stored in the first magnetic tunnel junction MTJ1 and the second magnetic tunnel junction MTJ2.

[0073] In this embodiment, a second spin-orbit moment layer 7 is provided, and the fifth distance L5 and the sixth distance L6 are not equal. Data can still be written using a combined SOT and STT method. When a pulse signal is input through the second spin-orbit moment layer 7, data can be written to the first magnetic tunnel junction MTJ1 without affecting the data stored in the second magnetic tunnel junction MTJ2. The magnetic storage unit can write data to multiple magnetic tunnel junctions sharing a common spin-orbit moment layer through the first spin-orbit moment layer 6, and write data to a single magnetic tunnel junction through the second spin-orbit moment layer 7. By combining the writing methods of the first spin-orbit moment layer 6 and the second spin-orbit moment layer 7, various combinations of data pairs that need to be stored can be obtained.

[0074] In optional embodiments, a third pulse signal and a fourth pulse signal with opposite polarities are input from two ends of the second spin-orbit torque layer 7 along the fifth distance L5 and the sixth distance L6 respectively.

[0075] The second write spin transfer torque current formed by signal time delay of the third pulse signal and the fourth pulse signal at the first magnetic tunnel junction MTJ1 is opposite in polarity to the first write spin transfer torque current ISTT.

[0076] Specifically, in some embodiments, in order to make the voltage at the first magnetic tunnel junction MTJ1 be 0, the polarity and voltage size of the first pulse signal ISOT1 and the second pulse signal ISOT2 need to be limited, and the combination of generated SOT and STT has only two cases. Then on the second spin-orbit torque layer 7, if the first magnetic tunnel junction MTJ1 is at a fifth distance L5 from one end of the second spin-orbit torque layer 7 inputting a positive pulse signal, the size of the fifth distance L5 and the sixth distance L6 is opposite to the first distance L1 and the second distance L2, more SOT and STT combination cases can be achieved.

[0077] For example, for Figure 7 The magnetic storage unit shown, with respect to the first magnetic tunnel junction MTJ1, the direction of the first end 4 to the second end 5 of the first spin-orbit torque layer 6 is positive, and the direction of the third end 8 to the fourth end 9 of the second spin-orbit torque layer 7 is positive, then the distance from the first end 4 to the first magnetic tunnel junction MTJ1 is the first distance L1, the distance from the second end 5 to the first magnetic tunnel junction MTJ1 is the second distance L2, the distance from the third end 8 to the second magnetic tunnel junction MTJ2 is the fifth distance L5, and the distance from the fourth end 9 to the second magnetic tunnel junction MTJ2 is the sixth distance L6.

[0078] When the first distance L1 is greater than the second distance L2 and the fifth distance L5 is less than the sixth distance L6, the first end 4 inputs the first pulse signal ISOT1 in the positive direction, the second end 5 inputs the second pulse signal ISOT2 in the negative direction, and the spin transfer torque current in the negative direction and the positive direction is formed in the first magnetic tunnel junction MTJ1 in turn; the first end 4 inputs the first pulse signal ISOT1 in the negative direction, the second end 5 inputs the second pulse signal ISOT2 in the positive direction, and the spin transfer torque current in the positive direction and the negative direction is formed in the first magnetic tunnel junction MTJ1 in turn; the fifth end inputs the third pulse signal in the positive direction, and the second end 5 inputs the fourth pulse signal in the negative direction, and the spin transfer torque current in the negative direction and the positive direction is formed in the first magnetic tunnel junction MTJ1 in turn; the fifth end inputs the third pulse signal in the negative direction, and the sixth end inputs the fourth pulse signal in the positive direction, and the spin transfer torque current in the positive direction and the negative direction is formed in the first magnetic tunnel junction MTJ1 in turn. Thus, the first write spin transfer torque current ISTT formed by the first pulse signal ISOT1 and the second pulse signal ISOT2 is opposite in polarity to the second write spin transfer torque current formed by the third pulse signal and the fourth pulse signal.

[0079] It should be noted that if the first magnetic tunnel junction MTJ1 is multiple, each first magnetic tunnel junction MTJ1 can be correspondingly provided with the second spin orbit moment layer 7, and the distance between the first magnetic tunnel junction MTJ1 and the second spin orbit moment layer 7 can be set according to requirements. If there is at least one second magnetic tunnel junction MTJ2, the second magnetic tunnel junction MTJ2 is similar to the first magnetic tunnel junction MTJ1 in terms of the setting of the second spin orbit moment layer 7, that is, each second magnetic tunnel junction MTJ2 can be correspondingly provided with the second spin orbit moment layer 7, and the distance between the second magnetic tunnel junction MTJ2 and the second spin orbit moment layer 7 can be set according to requirements. The other structure of the second magnetic tunnel junction MTJ2 can refer to the description of the first magnetic tunnel junction MTJ1, and will not be described here.

[0080] Based on the same principle, the application also discloses a magnetic storage device, which comprises the signal time delay based magnetic storage unit as described in the embodiment.

[0081] Since the principle of solving the problem of the device is similar to that of the unit, the implementation of the device can refer to the implementation of the unit, and will not be described here.

[0082] In some embodiments, the layout design of the device is allowed to be matched with the common source waveguide.

[0083] In some embodiments, the write transistor and / or the read transistor can be connected in series with the calibration resistor. The order of the transistor and the calibration resistor in the single path is not limited.

[0084] In some embodiments, the magnetic tunnel junction has anisotropy, including but not limited to perpendicular magnetic anisotropy, in-plane magnetic anisotropy, T-shaped design, and other anisotropies.

[0085] In some embodiments, the voltage is an external excitation capable of generating probabilistic behavior. In theory, temperature field, magnetic field, pressure control field, current, heat field, optical field such as laser, microwave field, and other excitation methods with energy input can also achieve the function.

[0086] In some embodiments, the magnetic tunnel junction has a shape capable of forming a shape anisotropy field (non-uniform demagnetization field) for providing the applied magnetic field. For example, the magnetic tunnel junction can adopt shapes such as rectangle, ellipse, and isosceles right triangle. Taking the ellipse as an example, the demagnetization field is weak in the long axis direction and strong in the short axis direction, which can be equivalent to an applied magnetic field. In some embodiments, the available shapes of the magnetic tunnel junction include but are not limited to ellipse, rhombus, rectangle, triangle, and other shapes. In some embodiments, the available shapes of the magnetic tunnel junction include shapes such as inclined semicircle and isosceles triangle that do not have x / y axis symmetry after being inclined.

[0087] In some embodiments, the spin-orbit torque layer as an electrode layer can select anti-ferromagnetic, two-dimensional material, van der Waals, topological insulator, and other carriers capable of generating probabilistic behavior or torque or providing an equivalent magnetic field, and adopt various material embedding, intercalation, doping, injection, annealing, and other process optimization.

[0088] In some embodiments, the spin-orbit torque layer as a bottom electrode can be located above the MTJ. If there are multiple MTJs, at least two of the multiple MTJs can be arranged on different planes of the spin-orbit torque layer.

[0089] In some embodiments, the magnetic tunnel junction can include multiple free layers 3, barrier layers 2, intercalation layers, seed layers, capping layers, and the like.

[0090] In some embodiments, the width of the bottom electrode at the location of different MTJs can be different; different MTJs have different sizes; different MTJs have different spacings; and multiple MTJs are placed on the same heavy metal layer.

[0091] In some embodiments, the spin-orbit torque layer as a bottom electrode can have a shape such as a strip, a cross, a Y-shaped fork, a 6P electrode, an 8P electrode, and the like.

[0092] In some embodiments, the actual connection is formed by a bottom via / hole or an upper via / hole of the SOT channel for inputting a signal.

[0093] In some embodiments, the SOT channel can be above the MTJ, i.e., from top to bottom, the SOT channel, the free layer 3, the barrier layer 2, the reference layer 1, and the pinned layer.

[0094] In some embodiments, the electronic device should also include read circuitry, write circuitry, and peripheral conversion circuitry (decoders, etc.).

[0095] In some embodiments, the spin Hall angle of the spin orbit torque layer material is different, and the polarization direction of the spin current generated is also different.

[0096] In some embodiments, a toggle type design can be used. The implementation carrier can be a toggle type MRAM.

[0097] In some embodiments, full-chip testing, board-level package testing, slice integration testing, bare chips, and software and hardware combinations are used to test the data generation device.

[0098] In some embodiments, a NAND type device constitutes a PUF array, which reduces the area compared to a single MTJ design. The array can be integrated with SOT-MRAM to reduce process difficulty and provide PUF function and improve storage security.

[0099] The application can be used to realize Ising machine, can be used to do Monte Carlo Markov sampling, also can be used for probability device. It can be used for random injection algorithm, random process, genetic algorithm, Ising machine, decision algorithm, Monte Carlo Markov chain sampling, probabilistic synapse in neuromorphic hardware, Bayesian inference, simulated annealing algorithm, Bayesian network and other algorithms requiring probability data or algorithms.

[0100] In the application, the magnetic tunnel junction includes a reference layer 1, a barrier layer 2 and a free layer 3 arranged in sequence from top to bottom, the material of the spin orbit torque layer is antiferromagnetic material, the spin orbit torque layer and the free layer 3 form an exchange bias field for providing the equivalent external magnetic field;

[0101] In optional embodiments, in order to adjust the perpendicular anisotropy of the magnetic tunnel junction and the smoothness of each layer and other characteristics, the magnetic tunnel junction can further include at least one of an insertion layer, a pinning layer, a seed layer, and a capping layer, and the like. The arrangement of each layer structure can be one or more layers according to actual needs, and the skilled in the art can arrange the order of each layer structure of the magnetic tunnel junction from top to bottom according to needs, which is not limited in the present application. In some embodiments, a top-pin structure can be used, and the structure order (from bottom to top) is in turn bottom electrode, free layer 3 (Free Layer), tunnel barrier layer 2 (MgO), reference layer 1 (Reference Layer), and pinned layer (Pinned Layer); a bottom-pin structure, and the structure order (from bottom to top) is in turn pinned layer (Pinned Layer), reference layer 1 (Reference Layer), tunnel barrier layer 2 (MgO), and free layer 3 (Free Layer).

[0102] In optional embodiments, a top electrode can be provided on the top of the magnetic tunnel junction, and a current input electrode and an output electrode can be respectively provided on the opposite sides of the spin-orbit torque layer for detecting the input of the current and the spin-orbit torque current. Preferably, the material of the electrode can be any one of tantalum Ta, aluminum Al, gold Au, or copper Cu.

[0103] Preferably, the material of the free layer 3 and the reference layer 1 can be a ferromagnetic metal, and the material of the barrier layer 2 can be an oxide. The ferromagnetic metal can be at least one of a mixed metal material formed by cobalt iron CoFe, cobalt iron boron CoFeB, or nickel iron NiFe, and the proportion of the mixed metal material can be the same or different. The oxide can be one of magnesium oxide MgO or aluminum oxide Al2O3, and the like, for generating a tunneling magnetoresistance effect. In actual applications, the ferromagnetic metal and the oxide can also use other feasible materials, which are not limited in the present application.

[0104] The free layer 3 of the magnetic tunnel junction is in contact with the spin-orbit torque layer and is fixed. The layers of the magnetic tunnel junction and the spin-orbit torque layer can be sequentially plated on the substrate in order from bottom to top by conventional ion beam epitaxy, atomic layer deposition, or magnetron sputtering, and the like, and then two or more magnetic tunnel junctions can be prepared and formed by conventional nanometer device processing technology such as photolithography and etching.

[0105] In a preferred embodiment, the spin-orbit torque layer is a heavy metal thin film, an anti-ferromagnetic thin film or other material. The top area of the heavy metal thin film or the anti-ferromagnetic thin film of each branch is preferably larger than the bottom area of the outline of all the magnetic tunnel junctions, so as to be able to set two or more magnetic tunnel junctions, and the bottom shape of the magnetic tunnel junctions is completely embedded in the top shape of the heavy metal thin film or the anti-ferromagnetic thin film. Preferably, the material of the spin-orbit torque layer can be selected from one of platinum (Pt), tantalum (Ta) or tungsten (W). In actual applications, the spin-orbit torque layer can also be formed by other feasible materials, which are not limited in the present application.

[0106] In the present embodiment, the magnetic tunnel junction includes a reference layer 1 at the top, a free layer 3 in contact with the spin-orbit torque layer, and a barrier layer 2 arranged between the reference layer 1 and the free layer 3. The magnetic tunnel junction is a three-layer structure and only includes one free layer 3. In other embodiments, the free layer 3 can be set to be multiple, i.e., two or more free layers 3. Then the magnetic tunnel junction includes a reference layer 1 at the top, multiple free layers 3, and a barrier layer 2 arranged between each adjacent two layers. The bottommost free layer 3 is arranged in contact with the spin-orbit torque layer. For example, in a specific example, when including two free layers 3, the magnetic storage unit structure can include a spin-orbit torque layer, a second free layer 3, a barrier layer 2, a first free layer 3, a barrier layer 2 and a reference layer 1 arranged in sequence on the spin-orbit torque layer.

[0107] The present application can be used to constitute a memory in a computer device or a readable medium, the memory including permanent and non-permanent, removable and non-removable media can be realized by any method or technology to store information. The information can be computer readable instructions, data structures, program modules or other data. Examples of applications of the multifunctional magnetic random memory include, but are not limited to, random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette, magnetic tape disk storage or other magnetic storage device or any other non-transmission medium, which can be used to store information that can be accessed by a computing device.

[0108] Since the principle of solving the problem of the multifunctional magnetic random memory is similar to that of the multifunctional magnetic random storage unit, the implementation of the multifunctional magnetic random memory can refer to the implementation of the multifunctional magnetic random storage unit described above, which will not be repeated here.

[0109] Based on the same principle, the present embodiment also discloses a computer device, which includes a memory, a processor and a computer program stored in the memory and executable on the processor.

[0110] The processor and / or the memory include the multifunctional magnetic random storage unit as described in the embodiments.

[0111] The multifunctional magnetic random storage unit as described in the embodiments above can be specifically provided in a product device having certain functions. A typical implementation device is a computer device, which can be specifically a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0112] In a typical example, the computer device specifically includes a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor and / or the memory including the multifunctional magnetic random storage unit as described in the embodiments.

[0113] Reference is made below to Figure 8 which shows a structural schematic diagram of a computer device 600 suitable for implementing the embodiments of the present application.

[0114] As shown in Figure 8 , the computer device 600 includes a central processing unit (CPU) 601, which can perform various appropriate operations and processes according to programs stored in a read-only memory (ROM) 602 or loaded from a storage section 608 into a random access memory (RAM) 603. Various programs and data required for the operation of the computer device 600 are also stored in the RAM 603. The CPU 601, the ROM 602, and the RAM 603 are connected to each other through a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0115] The following components are connected to the I / O interface 605: an input section 606 including a keyboard, a mouse, etc.; an output section 607 including a display such as a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 608 including a hard disk, etc.; and a communication section 609 including a network interface card such as a LAN card, a modem, etc. The communication section 609 performs communication processing via a network such as the Internet. A drive 610 is also connected to the I / O interface 605 as necessary. A removable recording medium 611 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc. is attached to the drive 610 as necessary, so that a computer program read therefrom is installed into the storage section 608 as necessary.

[0116] The embodiments of the present application are described with reference to the flowchart illustrations and / or block diagrams of the methods, apparatus (systems) and computer program products according to the embodiments of the present application. It is understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams.

[0117] These computer program instructions can also be stored in a computer- readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions which implement the functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams.

[0118] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams.

[0119] It should also be noted that the terms "comprising", "comprises", "including", "includes" or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article or apparatus. An element proceeded by "comprises a... " does not, without more constraints, exclude the existence of additional identical elements in the process, method, article or apparatus that comprises the element.

[0120] Those skilled in the art will appreciate that embodiments of the present application can be devised for a method, a system or a computer program product. Accordingly, the present application can take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application can take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROMs, optical storage devices, etc.) embodying computer readable program code thereon for use by or in connection with an instruction execution system.

[0121] The application can be described in the general context of computer- executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application can also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules can be located in local and remote computer storage media including memory storage devices.

[0122] The various embodiments in the specification are described progressively, and the same or similar parts between the embodiments can be referred to each other. Each embodiment focuses on the difference from other embodiments. In particular, the system embodiments are described simply because they are basically similar to the method embodiments, and the relevant parts can be referred to the description of the method embodiments.

[0123] The above only describes the embodiments of the present application and is not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the scope of claims of the present application.

Claims

1. A magnetic storage cell based on signal delay, characterized in that, It includes a first spin-orbit matrix and a first magnetic tunnel junction disposed on the first spin-orbit matrix; The distances between the first magnetic tunnel junction and the two ends of the first spin orbital moment layer are a first distance and a second distance, respectively, and the first distance and the second distance are not equal; A first pulse signal and a second pulse signal are input from both ends of the first spin orbital moment layer along the first distance and the second distance, respectively; The first pulse signal and the second pulse signal form a first write spin-transfer torque current at the first magnetic tunnel junction due to signal delay, so that the free layer magnetic moment of the first magnetic tunnel junction undergoes a deterministic flip under the action of the first write spin-transfer torque current.

2. The magnetic storage unit based on signal delay according to claim 1, characterized in that, The first distance is greater than the second distance; When the first pulse signal is positive and the second pulse signal is negative, two spin-transfer torque currents, one negative and one positive, are formed successively at the first magnetic tunnel junction. The positive spin-transfer torque current is the first written spin-transfer torque current. When the first pulse signal is negative and the second pulse signal is positive, two spin-transfer torque currents, one positive and one negative, are formed successively at the first magnetic tunnel junction. The negative spin-transfer torque current is the first written spin-transfer torque current.

3. The magnetic storage unit based on signal delay according to claim 1, characterized in that, It also includes a second magnetic tunnel junction; The distances between the second magnetic tunnel junction and the two ends of the first spin orbital moment layer are the third distance and the fourth distance, respectively; The first distance is greater than the second distance, and the third distance is less than the fourth distance; The first pulse signal and the second pulse signal have opposite polarities. Due to signal delay, the first pulse signal and the second pulse signal form a first write spin-transfer torque current with opposite polarities at the first magnetic tunnel junction and the second magnetic tunnel junction.

4. The magnetic storage unit based on signal delay according to claim 1, characterized in that, The potential difference between the top and bottom of the first magnetic tunnel junction is 0.

5. The magnetic storage unit based on signal delay according to claim 4, characterized in that, The first pulse signal and the second pulse signal have opposite polarities, and the ratio of the first pulse signal and the second pulse signal is the same as the ratio of the corresponding first distance and the second distance.

6. The magnetic storage unit based on signal delay according to claim 4, characterized in that, A preset voltage is applied to the top of the first magnetic tunnel junction, the voltage value of which is obtained based on the first pulse signal and the second pulse signal.

7. The magnetic storage unit based on signal delay according to claim 6, characterized in that, The voltages of the first pulse signal and the second pulse signal at the first magnetic tunnel junction are the first voltage and the second voltage, respectively; The preset voltage value is the difference between the first voltage and the second voltage.

8. The magnetic storage unit based on signal delay according to claim 1, characterized in that, It further includes a second spin-orbit moment layer, and the first magnetic tunnel junction is disposed at the intersection of the first spin-orbit moment layer and the second spin-orbit moment layer; The first magnetic tunnel junction and the second spin orbital moment layer are respectively a fifth distance and a sixth distance, and the fifth distance and the sixth distance are not equal.

9. The magnetic storage unit based on signal delay according to claim 8, characterized in that, A third pulse signal and a fourth pulse signal of opposite polarity are input from both ends of the second spin orbital moment layer along the fifth distance and the sixth distance, respectively; The second write spin-transfer torque current formed at the first magnetic tunnel junction due to signal delay of the third pulse signal and the fourth pulse signal has the opposite polarity to the first write spin-transfer torque current.

10. A magnetic storage device, characterized in that, Includes the magnetic storage unit based on signal delay as described in any one of claims 1-9.

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