Display device

Abstract

The display device includes a first anode electrode, a second anode electrode, and a third anode electrode on a pixel circuit layer and separated from each other; a first resonance auxiliary structure on the second anode electrode and having a first thickness; a second resonance auxiliary structure on the third anode electrode and having a second thickness; a first sub-anode electrode on and in contact with the first anode electrode; a second sub-anode electrode on the second anode electrode to cover the first resonance auxiliary structure, and in contact with the second anode electrode; a third sub-anode electrode on the third anode electrode to cover the second resonance auxiliary structure, and in contact with the third anode electrode; a cathode electrode on the first to third anode electrodes; and an emission stack layer between the cathode electrode and the first to third sub-anode electrodes, and including first to third emission layers sequentially stacked therein.

Description

[0001] This application claims priority to and all the benefits of Korean Patent Application No. 10-2024-0059850, filed May 7, 2024, the contents of which are incorporated herein by reference in their entirety. TECHNICAL FIELD

[0002] Embodiments of the disclosure relate to a display device. BACKGROUND

[0003] An organic light emitting display device is a self-emissive display device configured to display an image by using an organic light emitting diode that emits light.

[0004] Generally, an organic light emitting diode includes an anode electrode, a cathode electrode facing the anode electrode, and at least one organic emission layer disposed between the anode electrode and the cathode electrode. In such an organic light emitting diode, holes supplied from the anode electrode and electrons supplied from the cathode electrode recombine within the organic emission layer to form excitons. The organic light emitting diode generates light by using energy generated when the excitons drop to a ground state. SUMMARY

[0005] A microcavity can be used as a method for improving light efficiency by effectively extracting light generated from the organic emission layer. The microcavity uses a principle that a strong interference effect is generated when light is repeatedly reflected by a first layer (e.g., an anode electrode) and a second layer (e.g., a cathode electrode) that are separated from each other by a preset interval. In this case, light having a certain wavelength can be amplified, and light having other wavelengths can be canceled.

[0006] Embodiments of the disclosure provide a display device using the above-described microcavity.

[0007] A display device according to an embodiment of the disclosure includes a first anode electrode, a second anode electrode, and a third anode electrode disposed on a pixel circuit layer and spaced apart from each other; a first resonance auxiliary structure disposed on the second anode electrode and having a first thickness; a second resonance auxiliary structure disposed on the third anode electrode and having a second thickness greater than the first thickness; a first sub-anode electrode disposed on the first anode electrode and in electrical contact with the first anode electrode; a second sub-anode electrode disposed on the second anode electrode to cover the first resonance auxiliary structure and in electrical contact with the second anode electrode; a third sub-anode electrode disposed on the third anode electrode to cover the second resonance auxiliary structure and in electrical contact with the third anode electrode; a cathode electrode disposed on the first anode electrode to the third anode electrode; and an emission stack layer disposed between the cathode electrode and the first sub-anode electrode to the third sub-anode electrode, wherein the emission stack layer includes a first emission layer, a second emission layer, and a third emission layer stacked one after another in order.

[0008] In an embodiment, the first resonance auxiliary structure and the second resonance auxiliary structure can each include an inorganic insulating material.

[0009] In an embodiment, the first to third sub-anode electrodes can each include a light-transmissive metal oxide.

[0010] In an embodiment, the first emission layer can be configured to emit light in a first waveband, the second emission layer can emit light in a second waveband different from the first waveband, and the third emission layer can emit light in a third waveband different from the first and second wavebands.

[0011] In an embodiment, the cathode electrode can include silver (Ag) doped with lithium (Li), and the silver (Ag) doped with lithium (Li) can include greater than about 5 mass percent (mass %) and less than about 50 mass % of lithium (Li), based on a total mass of the silver (Ag) doped with lithium (Li).

[0012] In an embodiment, the display device can further include a dam structure disposed between two adjacent anode electrodes among the first to third anode electrodes.

[0013] In an embodiment, the dam structure can include the same material as a material of the first and second resonance auxiliary structures.

[0014] In an embodiment, the dam structure can be in contact with a top surface of each of the two adjacent anode electrodes.

[0015] In an embodiment, the display device can further include a first common layer disposed between the emission stack and the first to third sub-anode electrodes, wherein a portion of the first common layer on a top surface of the dam structure can be disconnected from a portion of the first common layer on a side surface of the dam structure.

[0016] In an embodiment, the emission stack can be continuously disposed between the cathode electrode and the first to third sub-anode electrodes.

[0017] A display device according to an embodiment of the disclosure includes: a first anode electrode and a second anode electrode disposed on a pixel circuit layer and spaced apart from each other; a first resonance auxiliary structure disposed on the second anode electrode and having a first thickness; a first sub-anode electrode disposed on the first anode electrode and in electrical contact with the first anode electrode; a second sub-anode electrode disposed on the second anode electrode to cover the first resonance auxiliary structure and in electrical contact with the second anode electrode; a cathode electrode disposed on the first anode electrode and the second anode electrode; and an emission stack disposed between the cathode electrode and the first sub-anode electrode and the second sub-anode electrode, wherein the emission stack includes a first emission layer and a second emission layer stacked one after another in order, and the first emission layer emits first light having a wavelength in a range of about 440 nanometers (nm) to about 480 nm.

[0018] In an embodiment, the first anode electrode can include a first reflective electrode, and a first optical distance between a top surface of the first reflective electrode and a bottom surface of the cathode electrode can be in a range of about 700 angstroms (A) to about 800 A.

[0019] In an embodiment, a first resonance distance between the top surface of the first reflective electrode and an emission center of the first emission layer can be in a range of about 250 A to about 300 A.

[0020] In an embodiment, the second emission layer can be configured to emit second light having a wavelength in a range of about 500 nm to about 540 nm.

[0021] In an embodiment, the first thickness can be in a range of about 150 A to about 350 A.

[0022] In an embodiment, the emission stack can further include a third emission layer disposed on the second emission layer, and the third emission layer can be configured to emit third light having a wavelength in a range of about 610 nm to about 650 nm.

[0023] In an embodiment, the display device can further include: a third anode electrode disposed on the pixel circuit layer and spaced apart from the first anode electrode and the second anode electrode; a second resonance auxiliary structure disposed on the third anode electrode and having a second thickness; and a third sub-anode electrode disposed on the third anode electrode to cover the second resonance auxiliary structure and in electrical contact with the third anode electrode.

[0024] In an embodiment, the second thickness can be in a range of about 400 A to about 600 A.

[0025] In an embodiment, the emission stack can be continuously disposed on the pixel circuit layer and the first sub-anode electrode and the second sub-anode electrode.

[0026] In an embodiment, the cathode electrode can include silver (Ag) doped with lithium (Li), and the silver (Ag) doped with lithium (Li) can include greater than about 5 mass% and less than about 50 mass% of lithium (Li) based on a total mass of the silver (Ag) doped with lithium (Li). BRIEF DESCRIPTION OF DRAWINGS

[0027] FIG. 1 is a block diagram illustrating a display device according to an embodiment of the disclosure.

[0028] FIG. 2 is a block diagram illustrating one of sub-pixels among sub-pixels included in the display device of FIG. 1 .

[0029] FIG. 3 is a plan view of a display panel constituting the display device of FIG. 1 .

[0030] FIG. 4 is a cross-sectional view of an embodiment of the display panel of FIG. 3 .

[0031] FIG. 5 is a cross-sectional view of another embodiment of the display panel of FIG. 3 .

[0032] FIG. 6 is a plan view of one of pixels among pixels included in the display panel of FIG. 3 .

[0033] FIG. 7 is a cross-sectional view taken along line I1-I2 of FIG. 6 .

[0034] FIG. 8 is an enlarged cross-sectional view of region AR1 of FIG. 7 .

[0035] FIG. 9 and FIG. 10 are graphs illustrating intensity of light emitted from the first emission layer as the optical distance in the first sub-pixel varies.

[0036] FIG. 11 is a cross-sectional view taken along line I2-I3 of FIG. 6 .

[0037] FIG. 12 is an enlarged cross-sectional view of region AR2 of FIG. 11 .

[0038] FIG. 13 and FIG. 14 are graphs illustrating intensity of light emitted from the second emission layer as the optical distance in the second sub-pixel varies.

[0039] FIG. 15 is a cross-sectional view taken along the line I3-I4 of FIG. 6

[0040] FIG. 16 is an enlarged cross-sectional view of the region AR3 of FIG. 15

[0041] FIG. 17 and FIG. 18 is a graph showing the intensity of light emitted from the third emission layer as a function of the optical distance in the third sub-pixel.

[0042] FIG. 19 is a graph showing the intensity of light emitted from a pixel comprising a first resonant auxiliary structure and a second resonant auxiliary structure as a function of each wavelength.

[0043] FIG. 20 is a graph showing the intensity of light emitted from a pixel not comprising a first resonant auxiliary structure and a second resonant auxiliary structure as a function of each wavelength.

[0044] FIG. 21 is a graph for describing the relationship between the light reflectance and the lithium content in the cathode electrode.

[0045] FIG. 22 is a graph for describing the relationship between the light absorption and the lithium content in the cathode electrode.

[0046] FIG. 23 to FIG. 28 is a cross-sectional view showing an embodiment of a method of manufacturing a pixel of FIG. 6

[0047] FIG. 29 is a block diagram showing a display system according to an embodiment.

[0048] FIG. 30 to FIG. 33 is a perspective view showing an application example of a display system of FIG. 29 DETAILED DESCRIPTION

[0049] The present application will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. The present application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the application to those skilled in the art. Like reference numerals refer to like elements throughout.

[0050] ​​​​It will be understood that when an element is referred to as being "on" another element, it can be directly on that other element, or there can be an intervening element between them. Conversely, when an element is referred to as being "directly on" another element, there is no intervening element. It will be understood that when a part is referred to as being "connected to" another part, it can be "directly connected to" the other part, or "indirectly connected to" the other part, with an intervening part in between.

[0051] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or part from another. Therefore, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part without departing from the teachings of this document.

[0052] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, “a,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both singular and plural. Thus, a reference to an element “a” in the claims (followed by a reference to the element “the”) includes one element and multiple elements. For example, unless the context clearly indicates otherwise, “element” has the same meaning as “at least one element.” “At least one” should not be construed as a limiting “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. The expression “at least one of X, Y, and Z” or “selected from at least one of X, Y, and Z” can be interpreted as one X, one Y, one Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XY, YZ, XZ, etc.). It will be further understood that when the terms “comprising” or “including” are used in this specification, they indicate the presence of the stated features, areas, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components and / or groups thereof.

[0053] Spatially relative terms can be used to describe one element's or feature's relationship to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation, dependent on the particular viewpoint. For example, if a device depicted in the figures is turned over, elements described as "below" other elements or features would then be oriented "above" the other elements or features. Accordingly, the term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0054] The term "about" or "approximately," as used herein when used in connection with a quantity, includes the stated value and means the stated value plus or minus the acceptable variation determined by one of ordinary skill in the art. For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0056] Embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are expected. Thus, embodiments described herein are not to be construed as limited to the particular shapes illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, a region illustrated or described as flat can often have rough and / or nonlinear features. Additionally, an illustrated sharp corner can often be rounded. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims to a precise region shape. Embodiments described herein can be implemented in hardware, software, firmware, middleware, microcode, or any combination thereof. For a hardware implementation, the processing units can be implemented within one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, other electronic units designed to perform the functions described herein, or a combination thereof.

[0057] FIG. 1 is a block diagram illustrating a display device according to an embodiment of the present disclosure.

[0058] Referring to FIG. 1 An embodiment of the display device DD can include a display panel DP, a gate driver 120, a data driver 130, a voltage generator 140, and a controller 150.

[0059] The display panel DP can include subpixels SP. The subpixels SP can be connected to the gate driver 120 through the first to m-th gate lines GL1 to GLm. The subpixels SP can be connected to the data driver 130 through the first to n-th data lines DL1 to DLn. Here, n and m are natural numbers greater than 0.

[0060] The subpixels SP can generate a plurality of lights of two or more colors. In an embodiment, for example, the subpixels SP can generate lights of red, green, blue, cyan, magenta, yellow, etc.

[0061] Two or more subpixels among the subpixels SP can constitute one pixel PXL. In an embodiment, for example, as shown in FIG. 1B, the pixel PXL can include three subpixels SP. Depending on a combination of a plurality of lights emitted from the subpixels SP included in the pixel PXL, the pixel PXL can emit a plurality of lights of various colors and various brightnesses. FIG. 1

[0062] The gate driver 120 can be connected to the subpixels SP arranged in a row direction through the first to m-th gate lines GL1 to GLm. The gate driver 120 can output gate signals to the first to m-th gate lines GL1 to GLm in response to a gate control signal GCS. In an embodiment, the gate control signal GCS can include a horizontal synchronization signal, a start signal indicating a start of each frame, etc.

[0063] The gate driver 120 can be disposed at one side of the display panel DP. However, embodiments are not limited thereto. In an embodiment, for example, the gate driver 120 can be divided into two or more physically and / or logically separated drivers. Such drivers can be disposed at one side of the display panel DP and another side of the display panel DP opposite to the one side. In an embodiment, the gate driver 120 can be arranged around the display panel DP in various shapes according to embodiments.

[0064] The data driver 130 can be connected to the subpixels SP arranged in a column direction through the first to n-th data lines DL1 to DLn. The data driver 130 receives image data DATA and a data control signal DCS from the controller 150. The data driver 130 operates in response to the data control signal DCS. In an embodiment, the data control signal DCS can include a source start signal, a source shift clock, a source output enable signal, etc.

[0065] ​The data driver 130 can receive a voltage from the voltage generator 140. The data driver 130 can apply a data signal having a gray voltage corresponding to the image data DATA to the first to nth data lines DL1 to DLn by using the received voltage. When a gate signal is applied to each of the first to mth gate lines GL1 to GLm, a data signal corresponding to the image data DATA can be applied to the first to nth data lines DL1 to DLn. Accordingly, the sub-pixel SP can generate light corresponding to the data signal, and the display panel DP can display an image.

[0066] In an embodiment, the gate driver 120 and the data driver 130 can include complementary metal-oxide semiconductor (CMOS) circuit elements.

[0067] The voltage generator 140 can operate in response to a voltage control signal VCS from the controller 150. The voltage generator 140 can be configured to generate a plurality of voltages and provide the generated voltages to components such as the gate driver 120, the data driver 130, and the controller 150 of the display apparatus DD. The voltage generator 140 can generate the plurality of voltages by receiving an input voltage from the outside of the display apparatus DD and adjusting the received voltage.

[0068] The voltage generator 140 can generate a first power voltage and a second power voltage. In an embodiment, the generated first and second power voltages can be provided to the sub-pixel SP through a power line PL. In another embodiment, at least one of the first and second power voltages can be provided from the outside of the display apparatus DD.

[0069] In an embodiment, the voltage generator 140 can provide various voltages and / or signals. In an embodiment, for example, the voltage generator 140 can provide one or more initialization voltages to be applied to the sub-pixel SP. In an embodiment, for example, during a sensing operation of sensing electrical characteristics of a transistor and / or a light emitting device of the sub-pixel SP, a specific reference voltage can be applied to the first to nth data lines DL1 to DLn, and the voltage generator 140 can generate the reference voltage and transmit the generated reference voltage to the data driver 130. In an embodiment, for example, during a display operation of displaying an image on the display panel DP, a common pixel control signal can be applied to the sub-pixel SP, and the voltage generator 140 can generate the pixel control signal. In an embodiment, the voltage generator 140 can provide the pixel control signal to the sub-pixel SP through a pixel control line PXCL. In an embodiment, as described above, the voltage generator 140 can generate a plurality of voltages and provide the generated voltages to the display apparatus DD. FIG. 1As shown in FIG. 1, the pixel control line PXCL can be connected between the voltage generator 140 and the display panel DP, but embodiments are not limited thereto. In another embodiment, for example, the pixel control line PXCL can be connected between the gate driver 120 and the display panel DP. In such an embodiment, the pixel control signal can be transmitted from the voltage generator 140 to the pixel control line PXCL through the gate driver 120.

[0070] The controller 150 can control overall operations of the display apparatus DD. The controller 150 can receive the input image data IMG and the corresponding control signal CTRL from the outside. The controller 150 can provide the gate control signal GCS, the data control signal DCS, and the voltage control signal VCS in response to the control signal CTRL.

[0071] The controller 150 can convert the input image data IMG into image data DATA suitable for the display apparatus DD or the display panel DP, and output the image data DATA. In an embodiment, the controller 150 can output the image data DATA by rearranging the input image data IMG so as to be suitable for the sub-pixel SP in a row unit.

[0072] Two or more components among the data driver 130, the voltage generator 140, and the controller 150 can be mounted on one integrated circuit. In an embodiment, as shown in FIG. 1, the data driver 130, the voltage generator 140, and the controller 150 can be included in the driver integrated circuit DIC. In such an embodiment, the data driver 130, the voltage generator 140, and the controller 150 can be functionally separate components within one driver integrated circuit DIC. In other embodiments, at least one selected from the data driver 130, the voltage generator 140, and the controller 150 can be provided as a component separate from the driver integrated circuit DIC. FIG. 1

[0073] FIG. 2 is a block diagram illustrating one sub-pixel among sub-pixels included in the display apparatus of FIG. 1 . FIG. 2 illustrates a sub-pixel SPij among the sub-pixels SP of FIG. 1 .

[0074] Referring to FIG. 2 , an embodiment of the sub-pixel SPij can include a sub-pixel circuit SPC and a light emitting device LD.

[0075] ​The light emitting device LD can be connected between a first power supply voltage node VDDN and a second power supply voltage node VSSN. The first power supply voltage node VDDN can be connected to one of the power lines PL of FIG. 1 and receive a first power supply voltage. The second power supply voltage node VSSN can be connected to another of the power lines PL of FIG. 1 and receive a second power supply voltage. The first power supply voltage can have a higher voltage level than the second power supply voltage.

[0076] The light emitting device LD can be connected between an anode electrode AE and a cathode electrode CE. The anode electrode AE can be connected to the first power supply voltage node VDDN through the sub-pixel circuit SPC. In embodiments, for example, the anode electrode AE can be connected to the first power supply voltage node VDDN through one or more transistors included in the sub-pixel circuit SPC. The cathode electrode CE can be connected to the second power supply voltage node VSSN. The light emitting device LD is configured to emit light according to a current flowing from the anode electrode AE to the cathode electrode CE.

[0077] The sub-pixel circuit SPC can be connected to an i-th gate line GLi among the first gate line GL1 to the m-th gate line GLm of FIG. 1 and a j-th data line DLj among the first data line DL1 to the n-th data line DLn of FIG. 1 In response to a gate signal received through the i-th gate line GLi, the sub-pixel circuit SPC can control the light emitting device LD to emit light corresponding to a data signal received through the j-th data line DLj. In embodiments, the sub-pixel circuit SPC can be further connected to a pixel control line PXCL of FIG. 1 In such embodiments, the sub-pixel circuit SPC can further control the light emitting device LD in response to a pixel control signal received through the pixel control line PXCL.

[0078] For these operations, the sub-pixel circuit SPC can include circuit elements such as transistors and one or more capacitors.

[0079] The transistors of the sub-pixel circuit SPC can include P-type transistors and / or N-type transistors. In embodiments, the transistors of the sub-pixel circuit SPC can include metal oxide semiconductor field effect transistors (MOSFETs). In embodiments, for example, the transistors of the sub-pixel circuit SPC can include at least one selected from amorphous silicon semiconductors, single crystal silicon semiconductors, polycrystalline silicon semiconductors, and oxide semiconductors.

[0080] FIG. 3 is a plan view of a display panel constituting a display device of FIG. 1

[0081] Reference is made to FIG. 3 ​An embodiment of the display panel DP can include a display area DA and a non-display area NDA. The display panel DP can display an image through the display area DA. The non-display area NDA can be disposed around the display area DA.

[0082] The display panel DP can include sub-pixels SP disposed in the display area DA. The sub-pixels SP can be disposed (or arranged) in a first direction DR1 and a second direction DR2 intersecting the first direction DR1. In an embodiment, for example, the sub-pixels SP can be disposed in a matrix form in the first direction DR1 and the second direction DR2. In another embodiment, for example, the sub-pixels SP can be disposed in a zigzag form in the first direction DR1 and the second direction DR2. The arrangement of the sub-pixels SP can vary depending on the embodiment. The first direction DR1 can be a row direction, and the second direction DR2 can be a column direction.

[0083] Two or more sub-pixels among the sub-pixels SP can constitute one pixel PXL. In an embodiment, as shown in FIG. 1A, the pixel PXL can include three sub-pixels SP1, SP2, and SP3, but the embodiment is not limited thereto. In another embodiment, for example, the pixel PXL can include two sub-pixels. Hereinafter, for convenience of description, an embodiment in which the pixel PXL includes first to third sub-pixels SP1, SP2, and SP3 will be mainly described. FIG. 3

[0084] Each of the first to third sub-pixels SP1, SP2, and SP3 can include at least one light emitting device (see the light emitting device LD of FIG. 1B) configured to generate light and a sub-pixel circuit (see the sub-pixel circuit SPC of FIG. 1B). In an embodiment, for example, the light emitting devices of the first to third sub-pixels SP1, SP2, and SP3 can generate blue light, green light, and / or red light. FIG. 2 FIG. 2 The sub-pixel circuit (see the sub-pixel circuit SPC of FIG. 1B) can include a driving circuit (see the driving circuit DC of FIG. 1B) configured to drive the light emitting device (see the light emitting device LD of FIG. 1B) and a compensation circuit (see the compensation circuit CC of FIG. 1B) configured to compensate for a voltage drop of the driving circuit.

[0085] The components for controlling the sub-pixels SP can be disposed in the non-display area NDA in which the sub-pixels SP are not disposed. Lines (for example, the first to m-th gate lines GL1 to GLm, the first to n-th data lines DL1 to DLn, and the power line PL and the pixel control line PXCL of FIG. 1C) connected to the sub-pixels SP can be disposed in the non-display area NDA. FIG. 1

[0086] The components for controlling the sub-pixels SP can be selected from among a gate driver, a data driver, a power supply, and a pixel control circuit. FIG. 1 ​​​At least one of the gate driver 120, the data driver 130, the voltage generator 140, and the controller 150 can be disposed in the non-display area NDA of the display panel DP. In an embodiment, the gate driver 120 can be disposed in the non-display area NDA. In such an embodiment, the data driver 130, the voltage generator 140, and the controller 150 can be implemented as a driver integrated circuit DIC, and the driver integrated circuit DIC can be connected to the wires disposed in the non-display area NDA. In other embodiments, the gate driver 120 can be implemented together with the data driver 130, the voltage generator 140, and the controller 150 as a single integrated circuit separate from the display panel DP. FIG. 1

[0087] In an embodiment, the display area DA can have various shapes. The display area DA can have a closed loop shape including straight sides and / or curved sides. In an embodiment, for example, the display area DA can have one of various shapes such as a polygonal shape, a circular shape, a semi-circular shape, or an elliptical shape.

[0088] In an embodiment, the display panel DP can have a flat display surface. In other embodiments, the display panel DP can have a display surface that is at least partially arc-shaped. In an embodiment, the display panel DP can be bendable, foldable, or rollable. In such an embodiment, the substrate of the display panel DP and / or the display panel DP can include a material having a flexible characteristic.

[0089] FIG. 4 is FIG. 3 a cross-sectional view of an embodiment of the display panel.

[0090] Referring to FIG. 4 , an embodiment of the display panel DP can include a substrate SUB and a pixel circuit layer PCL, a display element layer DPL, and a light function layer LFL sequentially stacked on the substrate SUB in a third direction DR3 crossing the first direction DR1 and the second direction DR2. Here, the third direction DR3 can be a thickness direction of the display panel DP or the substrate SUB.

[0091] The substrate SUB can include an insulating material such as glass or resin. In an embodiment, for example, the substrate SUB can include a glass substrate. In another embodiment, for example, the substrate SUB can include a polyimide (PI) substrate. In another embodiment, for example, the substrate SUB can include a silicon wafer substrate formed by using a semiconductor process.

[0092] ​In an embodiment, the substrate SUB can include a flexible material to be bendable or foldable, and can have a single-layer structure or a multi-layer structure. In an embodiment, for example, the flexible material can include at least one selected from polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyether sulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, embodiments are not limited thereto.

[0093] The pixel circuit layer PCL can be disposed on the substrate SUB. The pixel circuit layer PCL can include insulating layers and semiconductor patterns and conductive patterns disposed between the insulating layers. The conductive patterns of the pixel circuit layer PCL can function as or define circuit elements, lines, etc.

[0094] The circuit elements of the pixel circuit layer PCL can form sub-pixel circuits SPC of the sub-pixels SP. FIG. 3 In other words, the circuit elements of the pixel circuit layer PCL can be provided as transistors and one or more capacitors of the sub-pixel circuits SPC.

[0095] The lines of the pixel circuit layer PCL can include lines connected to the sub-pixels SP. The lines of the pixel circuit layer PCL can include various signal lines and / or voltage lines for driving the display element layer DPL.

[0096] The display element layer DPL can be disposed on the pixel circuit layer PCL. The display element layer DPL can include light emitting devices of the sub-pixels SP.

[0097] The light function layer LFL can be disposed on the display element layer DPL. The light function layer LFL can include a light conversion pattern having color conversion particles and / or scattering particles. In an embodiment, for example, the color conversion particles can include quantum dots. The quantum dots can change the wavelength (or color) of light emitted from the display element layer DPL. The light function layer LFL can further include a light scattering pattern having scattering particles. In an embodiment, the light conversion pattern and the light scattering pattern can be omitted.

[0098] The light function layer LFL can further include a color filter layer including a color filter. The color filter can selectively transmit light of a specific wavelength (or a specific color). In other embodiments, the color filter layer can be omitted.

[0099] A window (not shown) can be provided on the light functional layer LFL to protect an exposed surface (or top surface) of the display panel DP. The window can protect the display panel DP from external impact. The window can be bonded to the light functional layer LFL by an optically transparent bonding member. The window can have a multi-layer structure selected from a glass substrate, a plastic film, and a plastic substrate. The multi-layer structure can be formed by a continuous process or a bonding process using a bonding layer. All or a portion of the window can be flexible.

[0100] FIG. 5 is a cross-sectional view of another embodiment of a display panel including FIG. 3

[0101] Referring to FIG. 5 , an embodiment of the display panel DP’ can include a substrate SUB, a pixel circuit layer PCL, a display element layer DPL, an input sensing layer ISL, and a light functional layer LFL. The substrate SUB, the pixel circuit layer PCL, the display element layer DPL, and the light functional layer LFL can be configured substantially the same (or similar) as the substrate SUB, the pixel circuit layer PCL, the display element layer DPL, and the light functional layer LFL already described with reference to FIG. 4 . Accordingly, any repetitive detailed description thereof will be omitted.

[0102] The input sensing layer ISL can detect a user input on a top surface (or display surface) of the display panel DP’. The input sensing layer ISL can include a component suitable for detecting an external object such as a user’s hand, a pen, or the like. In an embodiment, for example, the input sensing layer ISL can include a touch electrode.

[0103] FIG. 6 is a plan view of an embodiment of a pixel included in the display panel of FIG. 3

[0104] Referring to FIG. 6 , in an embodiment, the pixel PXL can include first to third sub-pixels SP1, SP2, and SP3. In an embodiment, the first to third sub-pixels SP1, SP2, and SP3 can be disposed or arranged in a first direction DR1. However, the arrangement of the first to third sub-pixels SP1, SP2, and SP3 is not limited thereto and can vary depending on the embodiment. In another embodiment, for example, the first to third sub-pixels SP1, SP2, and SP3 can be arranged in a zigzag form.

[0105] The first to third anode electrodes AE1, AE2, and AE3 can be disposed in the first to third sub-pixels SP1, SP2, and SP3, respectively. The first anode electrode AE1 can function as a sub-pixel circuit (see FIG. 2 ​​anode electrode (see FIG. 2 of the second sub-pixel SP2. The second anode electrode AE2 can function as an anode electrode of a sub-pixel circuit (see FIG. 2 of the second sub-pixel SP2. The second anode electrode AE2 can function as an anode electrode of a sub-pixel circuit (see FIG. 2 of the third sub-pixel SP3. The third anode electrode AE3 can function as an anode electrode of a sub-pixel circuit (see FIG. 2 of the third sub-pixel SP3. The third anode electrode AE3 can function as an anode electrode of a sub-pixel circuit (see FIG. 2 of the third sub-pixel SP3. The third anode electrode AE3 can function as an anode electrode of a sub-pixel circuit (see

[0106] The first resonance auxiliary structure RALa can be provided on the second anode electrode AE2. In a plan view or when viewed in the third direction DR3, the first resonance auxiliary structure RALa can completely overlap with a portion of the second anode electrode AE2. The first resonance auxiliary structure RALa can function to improve the light efficiency of the pixel PXL by introducing a microcavity of a specific wavelength of light. This will be described in more detail later with reference to FIG. 11 to FIG. 14 .

[0107] The second resonance auxiliary structure RALb can be provided on the third anode electrode AE3. In a plan view, the second resonance auxiliary structure RALb can completely overlap with a portion of the third anode electrode AE3. The second resonance auxiliary structure RALb can function to improve the light efficiency of the pixel PXL by introducing a microcavity of a specific wavelength of light. This will be described in more detail later with reference to FIG. 15 to FIG. 18 .

[0108] FIG. 7 is a cross-sectional view taken along the line I1-I2 of FIG. 6 . FIG. 7 is a cross-sectional view of the first sub-pixel SP1 of FIG. 6 .

[0109] With reference to FIG. 6 and FIG. 7 , in an embodiment, the pixel circuit layer PCL, the display element layer DPL, and the light function layer LFL can be sequentially provided on the substrate SUB.

[0110] The pixel circuit layer PCL can include insulating layers, semiconductor patterns, and conductive patterns stacked on the substrate SUB. The semiconductor patterns and the conductive patterns can be provided between the insulating layers. The conductive patterns can include, for example, at least one selected from copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).

[0111] The sub-pixel circuit (see FIG. 2The sub-pixel circuit SPC can include transistors and one or more capacitors. The semiconductor pattern and the conductive pattern of the pixel circuit layer PCL can function as the transistors and the capacitors of the sub-pixel circuit SPC. In addition, the conductive pattern of the pixel circuit layer PCL can also function as (or define) the first to m-th gate lines GL1 to GLm, the first to n-th data lines DL1 to DLn, and the power line PL and the pixel control line PXCL in the display element layer DPL, for example. FIG. 1

[0112] The display element layer DPL can be disposed on the pixel circuit layer PCL. The display element layer DPL can include a first anode electrode AE1, a first sub-anode electrode SAE1, a dam structure DAM, a first common layer CML1, an emission stack ESTK, a second common layer CML2, a cathode electrode CE, a capping layer CPL, and a sealing layer TFE.

[0113] The first anode electrode AE1 can be disposed on the pixel circuit layer PCL. The first anode electrode AE1 can be electrically connected to at least one of the transistors of the sub-pixel circuit SPC constituting the first sub-pixel SP1.

[0114] The first anode electrode AE1 can include a first lower transparent electrode LE1, a first reflective electrode RE1, and a first upper transparent electrode UE1, which are sequentially stacked one after another in the third direction DR3.

[0115] The first lower transparent electrode LE1 and the first upper transparent electrode UE1 can be configured to be substantially transparent or semi-transparent to satisfy a certain light transmittance. In an embodiment, for example, the first lower transparent electrode LE1 and the first upper transparent electrode UE1 can each include a light-transmitting metal oxide. In an embodiment, for example, the first lower transparent electrode LE1 and the first upper transparent electrode UE1 can each include at least one selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO). However, the materials of the first lower transparent electrode LE1 and the first upper transparent electrode UE1 are not limited thereto.

[0116] The first reflective electrode RE1 can include a conductive material having a certain reflectance. In an embodiment, for example, the first reflective electrode RE1 can include an opaque metal. The opaque metal can include at least one selected from silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and any alloy thereof. However, the material of the first reflective electrode RE1 is not limited thereto.

[0117] ​The first sub-anode electrode SAE1 may be disposed on the first upper transparent electrode UE1. The first sub-anode electrode SAE1 may be in direct contact with the first upper transparent electrode UE1. The first sub-anode electrode SAE1 may be configured to be substantially transparent or translucent to meet a specific light transmittance. In embodiments, for example, the first sub-anode electrode SAE1 may comprise the same material as the first lower transparent electrode LE1 or the first upper transparent electrode UE1. However, the material of the first sub-anode electrode SAE1 is not limited thereto.

[0118] In a plan view, the dam structure DAM can be positioned between two adjacent anode electrodes. In an embodiment, for example, the dam structure DAM can be positioned between the first anode electrode AE1 and the second anode electrode AE2.

[0119] In such an embodiment, the dam structure DAM can be configured to be... FIG. 6 The edges of the first anode electrode to the third anode electrodes AE1, AE2, and AE3, as illustrated in the figure, overlap at least some of them. In one embodiment, for example, the dam structure DAM may be configured to overlap with and surround the edge of the first anode electrode AE1 in a plan view. In another embodiment, for example, the dam structure DAM may be configured to overlap only a portion of the edge of the first anode electrode AE1.

[0120] In the region where the dam structure DAM is provided, the dam structure DAM may cover the side surface of the first anode electrode AE1. In an embodiment, for example, the dam structure DAM may directly cover the side surfaces of the first lower transparent electrode LE1, the first reflective electrode RE1, and the first upper transparent electrode UE1.

[0121] In the region where the dam structure DAM is provided, the dam structure DAM can be in direct contact with the top surface of the first anode electrode AE1. In an embodiment, for example, the dam structure DAM can be in direct contact with a portion of the top surface of the first upper transparent electrode UE1. In such an embodiment, the first sub-anode electrode SAE1 can be provided entirely on another portion of the top surface of the first upper transparent electrode UE1 that is not in contact with (or exposed through) the dam structure DAM.

[0122] The dam structure DAM can be used to disconnect the first common layer CML1 between two adjacent anode electrodes. Accordingly, it is possible to prevent a lateral leakage current from occurring between two adjacent anode electrodes through the first common layer CML1. To this end, the dam structure DAM can have a proper taper angle and a proper thickness. In an embodiment, for example, a taper angle ANG between a side surface of the dam structure DAM and a top surface of the first upper transparent electrode UE1 which is in contact with the dam structure DAM can be in a range of about 45 degrees to about 60 degrees. In addition, a thickness in the third direction DR3 from the top surface of the first upper transparent electrode UE1 to the top surface of the dam structure DAM can be about 300 angstroms or more. However, the taper angle and the thickness of the dam structure DAM are not limited thereto.

[0123] The dam structure DAM can include an inorganic insulating material. In an embodiment, for example, the dam structure DAM can include at least one selected from silicon nitride, silicon oxide, and silicon oxynitride. However, the material of the dam structure DAM is not limited thereto.

[0124] The first common layer CML1 can be disposed between the first sub-anode electrode SAE1 and the emission stack ESTK. The first common layer CML1 can include various functional layers for improving the efficiency of light emitted from the emission stack ESTK. In an embodiment, for example, the first common layer CML1 can include a hole injection layer HIL and a hole transport layer HTL which are sequentially stacked in the third direction DR3. However, the type of the functional layer included in the first common layer CML1 is not limited thereto.

[0125] The first common layer CML1 can be entirely disposed on the first sub-anode electrode SAE1 and the dam structure DAM. In an embodiment, the first common layer CML1 can be disconnected above the dam structure DAM, that is, a portion of the first common layer CML1 on the top surface of the dam structure DAM is disconnected from a portion of the first common layer CML1 on the side surface of the dam structure DAM. In an embodiment, for example, a first portion of the first common layer CML1 disposed on the first sub-anode electrode SAE1 and a second portion of the first common layer CML1 disposed on the top surface of the dam structure DAM can be spaced apart from each other.

[0126] The emission stack ESTK can be disposed on the first common layer CML1. The emission stack ESTK can be continuously disposed to cover components disposed below the emission stack ESTK. The emission stack ESTK can include a first emission layer EML1, a first light buffering layer EBUF1, a second emission layer EML2, a third emission layer EML3, and a second light buffering layer EBUF2 which are sequentially stacked one after another in the third direction DR3.

[0127] The first emission layer EML1 can be configured to emit first light in a first waveband. In an embodiment, for example, the first emission layer EML1 can be configured to emit light having a wavelength in a range of about 440 nm to about 480 nm (or light in a wavelength range of about 440 nm to about 480 nm). In this case, the first light can be blue light.

[0128] The first light buffer layer EBUF1 can be disposed between the first emission layer EML1 and the second emission layer EML2. The first light buffer layer EBUF1 can include various types of functional layers for improving light efficiency of the emission stack layer ESTK. Depending on the embodiment, the first light buffer layer EBUF1 can be omitted.

[0129] The second emission layer EML2 can be configured to emit second light in a second waveband. In an embodiment, for example, the second emission layer EML2 can be configured to emit light having a wavelength in a range of about 500 nm to about 540 nm. In this case, the second light can be green light.

[0130] The third emission layer EML3 can be configured to emit third light in a third waveband. In an embodiment, for example, the third emission layer EML3 can be configured to emit light having a wavelength in a range of about 610 nm to about 650 nm. In this case, the third light can be red light.

[0131] The second light buffer layer EBUF2 can be disposed on the third emission layer EML3. The second light buffer layer EBUF2 can include various types of functional layers for improving light efficiency of the emission stack layer ESTK. Depending on the embodiment, the second light buffer layer EBUF2 can be omitted.

[0132] The second common layer CML2 can be disposed between the emission stack layer ESTK and the cathode electrode CE. The second common layer CML2 can include various functional layers for improving efficiency of light emitted from the emission stack layer ESTK. In an embodiment, for example, the second common layer CML2 can include an electron transport layer ETL and an electron injection layer EIL sequentially stacked in the third direction DR3. However, the type of functional layer included in the second common layer CML2 is not limited thereto.

[0133] The first common layer CML1, the emission stack layer ESTK, and the second common layer CML2 can define a light emitting device of the first sub-pixel SP1 (see FIG. 2 The first sub-pixel SP1 can be provided in a series structure including two or more emission layers configured to emit a plurality of lights having different wavebands.

[0134] A cathode electrode CE can be disposed on the second common layer CML2. The cathode electrode CE can be configured to be substantially semi-transparent. In an embodiment, the cathode electrode CE can include lithium (Li)-doped silver (Ag). The lithium (Li)-doped silver (Ag) can include greater than about 5 mass percent (mass %) and less than about 50 mass % (e.g., about 10 mass % or greater and about 30 mass % or less) of lithium (Li), based on a total mass of the lithium (Li)-doped silver (Ag). Since the cathode electrode CE includes the above-described material, the cathode electrode CE can have an appropriate reflectance to introduce a microcavity of light emitted from the emission stack layer ESTK. In addition, it is possible to effectively prevent light emitted from the emission stack layer ESTK from being excessively absorbed by the cathode electrode CE. This will be described in more detail later with reference to FIGS. 10A and 10B. FIG. 21 and FIG. 22 This will be described in more detail.

[0135] A capping layer CPL can be disposed on the cathode electrode CE. The capping layer CPL can function to protect components below the capping layer CPL. In addition, the capping layer CPL can help light generated in the emission stack layer ESTK to be effectively emitted to the outside. The capping layer CPL can be provided as or defined by a single layer or a plurality of layers including an organic insulating material and / or an inorganic insulating material.

[0136] A packaging layer TFE can be disposed on the capping layer CPL. The packaging layer TFE can function to protect components below the packaging layer TFE from impurities (e.g., moisture and / or gas). In an embodiment, for example, the packaging layer TFE can include a first inorganic packaging layer, an organic packaging layer, and a second inorganic packaging layer stacked one after another in the third direction DR3.

[0137] A light function layer LFL can be disposed on the packaging layer TFE. The light function layer LFL can include a color filter layer including a color filter and / or a light conversion pattern having color conversion particles and / or scattering particles. In an embodiment, in a region in which the first sub-pixel SP1 is provided, the light function layer LFL can include a blue color filter that selectively transmits blue light. However, the light function layer LFL is not limited thereto.

[0138] FIG. 8 is an enlarged cross-sectional view of the region AR1 of FIG. 7 is a graph showing intensity of light emitted from the first emission layer as an optical distance in the first sub-pixel changes. FIG. 9 and FIG. 10 is a graph showing intensity of light emitted from the first emission layer as an optical distance in the first sub-pixel changes.

[0139] Reference is made to FIG. 7 and FIG. 8The first sub-pixel SP1 of the present disclosure can have a first optical distance OD1. The first optical distance OD1 can be a distance in which light generated in the emission stack layer ESTK is reflected from a reflection interface and resonates. The reflection interface can be defined on a top surface of the first reflective electrode RE1 and a bottom surface of the cathode electrode CE. The first optical distance OD1 can be defined by a physical distance from an interface between the first reflective electrode RE1 and a layer (e.g., the first upper transparent electrode UE1) in contact with the first reflective electrode RE1 to an interface between the cathode electrode CE and a layer (e.g., the electron injection layer EIL) in contact with the cathode electrode CE, and refractive indexes of the components UE1, SAE1, CML1, ESTK, and CML2 between the first reflective electrode RE1 and the cathode electrode CE. For example, the first optical distance OD1 can satisfy Equation 1-1 below.

[0140] [Equation 1-1]

[0141] OD1 = (N UE1 × T UE1 ) + (N SAE1 × T SAE1 ) + (N CML1 × T CML1 ) + (N ESTK × T ESTK )

[0142] + (N CML2 × T CML2 )

[0143] In Equation 1-1 above, N UE1 , N SAE1 , N CML1 , N ESTK , and N CML2 denote the refractive indexes of the first upper transparent electrode UE1, the first sub-anode electrode SAE1, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2, respectively.

[0144] In Equation 1-1 above, T UE1 , T SAE1 , T CML1 , T ESTK , and T CML2 denote the thicknesses of the first upper transparent electrode UE1, the first sub-anode electrode SAE1, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2 in the third direction DR3, respectively.

[0145] In an embodiment, the first sub-pixel SP1 can have a first resonance distance CD1 corresponding to the first emission layer EML1. The first resonance distance CD1 can be a distance at which light generated at a center of emission of the first emission layer EML1 is reflected from a top surface of the first reflective electrode RE1 as a reflection interface and resonates. The center of emission of the first emission layer EML1 can correspond to a center portion at which light generated in the first emission layer EML1 is emitted. In an embodiment, for example, the center of emission of the first emission layer EML1 can be a point that is half of a thickness of the first emission layer EML1. The first resonance distance CD1 can be defined by a physical distance from the center of emission of the first emission layer EML1 to the top surface of the first reflective electrode RE1 and refractive indexes of the elements UE1, SAE1, CML1, and EML1 between the center of emission of the first emission layer EML1 and the first reflective electrode RE1. For example, the first resonance distance CD1 can satisfy the following Equation 1-2.

[0146] [Equation 1-2]

[0147] CD1 = (N UE1 × T UE1 ) + (N SAE1 × T SAE1 ) + (N CML1 × T CML1 ) + (N EML1 × 0.5T EML1 )

[0148] In Equation 1-2, N UE1 , N SAE1 , N CML1 , T UE1 , T SAE1 , and T CML1 are the same as those in Equation 1-1.

[0149] In Equation 1-2, N EML1 denotes a refractive index of the first emission layer EML1, and T EML1 denotes a thickness of the first emission layer EML1 in the third direction DR3.

[0150] Referring to FIG. 8 and FIG. 9 , a first first graph (hereinafter, to be referred to as "1-1 graph") PL11 is illustrated in FIG. 9 . In the 1-1 graph PL11, a horizontal axis denotes the first optical distance OD1, and a vertical axis denotes an intensity of first light of a first waveband generated in the first emission layer EML1. In FIG. 9 , the 1-1 graph PL11 exemplarily illustrates a variation in intensity of blue light in an embodiment.

[0151] The light emitted from the first emitting layer EML1 has a peak intensity at each specific first optical distance OD1. This peak intensity corresponds to the resonant state of the light emitted from the first emitting layer EML1 and tends to decrease as the first optical distance OD1 increases. When the length with peak intensity is set to the first optical distance OD1, high light extraction efficiency of the light emitted from the first emitting layer EML1 can be ensured.

[0152] In embodiments of this disclosure, the first optical distance OD1 can be approximately 700 angstroms or greater and approximately 800 angstroms or less. This can be substantially the same (or similar) as the length at which the first peak intensity appears in the 1-1 curve PL11. Accordingly, in embodiments where the first optical distance OD1 satisfies the above-described numerical range, high light extraction efficiency of the light emitted from the first emitting layer EML1 can be ensured.

[0153] refer to FIG. 8 and FIG. 10 ,exist FIG. 10 The second first curve (hereinafter referred to as "Curve 1-2") PL12 is shown. In Curve 1-2 PL12, the horizontal axis represents the first resonant distance CD1, and the vertical axis represents the intensity of the first light of the first band generated in the first emitting layer EML1. FIG. 10 In the example, graph PL12 (1-2) illustrates the variation in the intensity of blue light in the embodiment.

[0154] By controlling the first resonant distance CD1, there is essentially no intensity difference, but a resonant distance with peak intensity can be designed. As mentioned above, since the first optical distance OD1 is set to approximately 700 angstroms or greater and approximately 800 angstroms or less, it is expected that the first resonant distance CD1 will be set to be substantially smaller than the first optical distance OD1.

[0155] In embodiments of this disclosure, the first resonant distance CD1 can be approximately 250 angstroms or greater and approximately 300 angstroms or less. This can be a length substantially the same (or similar) to the length at which the first peak intensity appears in the 1-2 curve PL12. Accordingly, in embodiments where the first resonant distance CD1 satisfies the above-described numerical range, high light extraction efficiency of the light emitted from the first emitting layer EML1 can be ensured.

[0156] FIG. 11 It is along FIG. 6 The cross-sectional view taken from line I2-I3. FIG. 11 It is shown FIG. 6 A cross-sectional view of the second sub-pixel SP2.

[0157] refer to FIG. 6 and FIG. 11In an embodiment, the pixel circuit layer PCL, the display element layer DPL, and the light functional layer LFL can be sequentially disposed on the substrate SUB.

[0158] The pixel circuit layer PCL can be substantially the same (or similar) to the pixel circuit layer PCL described above with reference to FIG. 1. FIG. 7 In an embodiment, for example, the pixel circuit layer PCL can include various components constituting the sub-pixel circuit (see FIG. 1) of the second sub-pixel SP2. FIG. 2

[0159] The display element layer DPL can be disposed on the pixel circuit layer PCL. The display element layer DPL can include the second anode electrode AE2, the first resonance auxiliary structure RALa, the second sub-anode electrode SAE2, the dam structure DAM, the first common layer CML1, the emission stack ESTK, the second common layer CML2, the cathode electrode CE, the cap layer CPL, and the encapsulation layer TFE.

[0160] The second anode electrode AE2 can be disposed on the pixel circuit layer PCL. The second anode electrode AE2 can be electrically connected to at least one transistor among the transistors constituting the sub-pixel circuit SPC of the second sub-pixel SP2.

[0161] The second anode electrode AE2 can include the second lower transparent electrode LE2, the second reflective electrode RE2, and the second upper transparent electrode UE2, which are sequentially stacked in the third direction DR3. The second lower transparent electrode LE2, the second reflective electrode RE2, and the second upper transparent electrode UE2 can be configured to be substantially the same (or similar) to the first lower transparent electrode LE1, the first reflective electrode RE1, and the first upper transparent electrode UE1, which have been described above with reference to FIG. 1. Therefore, any repetitive detailed description thereof will be omitted. FIG. 7

[0162] The first resonance auxiliary structure RALa can be disposed on the second anode electrode AE2. In an embodiment, for example, a bottom surface of the first resonance auxiliary structure RALa can be in direct contact with a top surface of the second upper transparent electrode UE2. The first resonance auxiliary structure RALa can have a first thickness in the third direction DR3. In such an embodiment, a high light extraction efficiency of light emitted from the second emission layer EML2 can be ensured by the first resonance auxiliary structure RALa. This will be described in more detail later with reference to FIG. 6. FIG. 12 to FIG. 14

[0163] ​​​The second sub-anode electrode SAE2 can be disposed on the second anode electrode AE2 to cover the first resonance auxiliary structure RALa. The second sub-anode electrode SAE2 can be in electrical contact with the second anode electrode AE2. In an embodiment, for example, the second sub-anode electrode SAE2 can be in electrical contact with a non-overlapped surface of a top surface of the second upper transparent electrode UE2 that is not overlapped with the dam structure DAM and the first resonance auxiliary structure RALa. In such an embodiment, an outer peripheral surface of the first resonance auxiliary structure RALa can be directly covered by the second sub-anode electrode SAE2 and the second upper transparent electrode UE2. The second sub-anode electrode SAE2 can be configured to be substantially transparent or translucent to satisfy a certain light transmittance. In an embodiment, for example, the second sub-anode electrode SAE2 can include the same material as that of the first sub-anode electrode SAE1.

[0164] In an embodiment, the second sub-anode electrode SAE2 is disposed to cover the first resonance auxiliary structure RALa so that a sufficient contact area between the second sub-anode electrode SAE2 and the first common layer CML1 can be secured. Accordingly, the driving efficiency of the second sub-pixel SP2 can be improved. In a case where the second sub-anode electrode SAE2 is omitted, or when the first resonance auxiliary structure RALa is disposed on the second sub-anode electrode SAE2, the driving efficiency of the second sub-pixel SP2 can be degraded.

[0165] The dam structure DAM can be substantially the same (or similar) as the dam structure DAM described above with reference to FIG. 7 In an embodiment, for example, the dam structure DAM can be configured to overlap an edge of the second anode electrode AE2 and surround the second anode electrode AE2. In another embodiment, for example, the dam structure DAM can be configured to overlap a portion of an edge of the second anode electrode AE2. In a region where the dam structure DAM is provided, the dam structure DAM can cover a side surface of the second anode electrode AE2. In a region where the dam structure DAM is provided, the dam structure DAM can be in direct contact with a top surface of the second anode electrode AE2.

[0166] The first common layer CML1 can be substantially the same (or similar) as the first common layer CML1 described above with reference to FIG. 7 The first common layer CML1 can be disposed between the second sub-anode electrode SAE2 and the emission stack ESTK. The first common layer CML1 can be continuously disposed in an entire region where the first sub-pixel SP1 and the second sub-pixel SP2 are provided, but can be discontinuous over the dam structure DAM.

[0167] The emission stack ESTK can be substantially the same (or similar) as the emission stack ESTK described above with reference to FIG. 7The emission stack layer ESTK described above can be substantially the same (or similar). The emission stack layer ESTK can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided.

[0168] The second common layer CML2 described above can be substantially the same (or similar). The second common layer CML2 can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided. FIG. 7 The second common layer CML2 described above can be substantially the same (or similar). The second common layer CML2 can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided.

[0169] The first common layer CML1, the emission stack layer ESTK, and the second common layer CML2 can define a light emitting device of the second sub-pixel SP2 (see FIG. 2 The second sub-pixel SP2 can be provided in a series structure including two or more emission layers configured to emit a plurality of light having different wavebands.

[0170] The cathode electrode CE described above can be substantially the same (or similar). The cathode electrode CE can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided. FIG. 7 The cathode electrode CE described above can be substantially the same (or similar). The cathode electrode CE can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided.

[0171] The cap layer CPL and the encapsulation layer TFE described above can be substantially the same (or similar). The cap layer CPL and the encapsulation layer TFE can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided. FIG. 7 The cap layer CPL and the encapsulation layer TFE described above can be substantially the same (or similar). The cap layer CPL and the encapsulation layer TFE can be continuously disposed in the entire area where the first sub-pixel SP1 and the second sub-pixel SP2 are provided.

[0172] The light function layer LFL can be disposed on the encapsulation layer TFE. The light function layer LFL can include a color filter layer including a color filter and / or a light conversion pattern having color conversion particles and / or scattering particles. In an embodiment, in an area where the second sub-pixel SP2 is provided, the light function layer LFL can include a green color filter that selectively transmits green light. However, the light function layer LFL is not limited thereto.

[0173] FIG. 16 is FIG. 15 is a magnified cross-sectional view of the area AR2 of FIG. 17 and FIG. 18 is a graph showing intensity of light emitted from the second emission layer as an optical distance in the second sub-pixel varies.

[0174] Referring to FIG. 15 and FIG. 16In an embodiment, the second sub-pixel SP2 can have a second optical distance OD2. The second optical distance OD2 can be a distance in which light generated in the emission stack layer ESTK is reflected from a reflection interface and resonates. The reflection interface can be defined on a top surface of the second reflective electrode RE2 and a bottom surface of the cathode electrode CE. The second optical distance OD2 can be defined by a physical distance from the top surface of the second reflective electrode RE2 to the bottom surface of the cathode electrode CE and refractive indexes of the components UE2, RALa, SAE2, CML1, ESTK, and CML2 between the second reflective electrode RE2 and the cathode electrode CE. For example, the second optical distance OD2 can satisfy Equation 2-1 below.

[0175] [Equation 2-1]

[0176] OD2 = (N UE2 × T UE2 ) + (N RALa × T RALa ) + (N SAE2 × T SAE2 ) + (N CML1 × T CML1 )

[0177] + (N ESTK × T ESTK ) + (N CML2 × T CML2 )

[0178] In Equation 2-1 above, N UE2 , N RALa , N SAE2 , N CML1 , N ESTK , and N CML2 denote the refractive indexes of the second upper transparent electrode UE2, the first resonance auxiliary structure RALa, the second sub-anode electrode SAE2, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2, respectively.

[0179] In Equation 2-1 above, T UE2 , T RALa , T SAE2 , T CML1 , T ESTK , and T CML2 denote the thicknesses of the second upper transparent electrode UE2, the first resonance auxiliary structure RALa, the second sub-anode electrode SAE2, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2 in the third direction DR3, respectively.

[0180] Here, T RALa may be the first thickness THK_RALa which will be described later.

[0181] In an embodiment, the second sub-pixel SP2 may have a second resonant distance CD2 corresponding to the second emitting layer EML2. The second resonant distance CD2 may be the distance at which light generated at the emission center of the second emitting layer EML2 is reflected and resonates from the top surface of the second reflective electrode RE2, which serves as a reflective interface. The emission center of the second emitting layer EML2 may correspond to the central portion of the light emitted at that location in the second emitting layer EML2. For example, the emission center of the second emitting layer EML2 may be a point that is half the thickness of the second emitting layer EML2. The second resonant distance CD2 may be defined by the physical distance from the emission center of the second emitting layer EML2 to the top surface of the second reflective electrode RE2 and the refractive indices of the elements UE2, RALa, SAE2, CML1, EML1, EBUF1, and EML2 between the emission center of the second emitting layer EML2 and the second reflective electrode RE2. For example, the second resonant distance CD2 may satisfy the following equation 2-2.

[0182] [Equation 2-2]

[0183] CD2=(N UE2 ×T UE2 )+(N RALa ×T RALa )+(N SAE2 ×T SAE2 )+(N CML1 ×T CML1 )

[0184] +(N EML1 ×T EML1 )+(N EBUF1 ×T EBUF1 )+(N EML2 ×0.5T EML2 )

[0185] In equation 2-2 above, N UE2 N RALa N SAE2 N CML1 T UE2 T RALa T SAE2 and T CML1 The same as those in Equation 2-1 above.

[0186] In equation 2-2, N EML1 N EBUF1 and N EML2 These represent the refractive indices of the first emitting layer EML1, the first optical buffer layer EBUF1, and the second emitting layer EML2, respectively.

[0187] In equation 2-2, T EML1 TEBUF1 and T EML2 These represent the thicknesses of the first emission layer EML1, the first optical buffer layer EBUF1, and the second emission layer EML2 on the third-direction DR3, respectively.

[0188] refer to FIG. 16 and FIG. 17 ,exist FIG. 17 The diagram shows the first and second curves (hereinafter referred to as the "2-1 curve") PL21. In the 2-1 curve PL21, the horizontal axis represents the second optical distance OD2, and the vertical axis represents the intensity of the second light in the second band generated in the second emitting layer EML2. FIG. 17 In the example, graph PL21 (2-1) illustrates the variation in the intensity of green light in the embodiment.

[0189] The light emitted from the second emitting layer EML2 has a peak intensity at each specific second optical distance OD2. This peak intensity corresponds to the resonant state of the light emitted from the second emitting layer EML2 and tends to decrease as the second optical distance OD2 increases. When the length with the peak intensity is set to the second optical distance OD2, excellent light extraction efficiency of the light emitted from the second emitting layer EML2 can be ensured.

[0190] The length of the first peak intensity in the 2-1 curve PL21 can be greater than that in the 1-1 curve (see...). FIG. 9 The length of the first peak intensity appearing in the 2-1 curve PL21. In embodiments of this disclosure, the second optical distance OD2 can be set to be substantially the same (or similar) to the length of the first peak intensity appearing in the 2-1 curve PL21. In such an embodiment, the first resonant auxiliary structure RALa can be disposed between the second sub-anode electrode SAE2 and the second anode electrode AE2. The first resonant auxiliary structure RALa can have a first thickness THK_RALa on the third-direction DR3. Accordingly, the first resonant auxiliary structure RALa can compensate for the second optical distance OD2 in the region providing the second sub-pixel SP2 by the first thickness THK_RALa. Accordingly, in embodiments, the second optical distance OD2 can be set to be substantially the same (or similar) to the length of the first peak intensity appearing in the 2-1 curve PL21.

[0191] refer to FIG. 13 and FIG. 12 ,exist FIG. 16 The second 2-2 plot (hereinafter referred to as the "2-2 plot") PL22 is shown. In the 2-2 plot PL22, the horizontal axis represents the second resonant distance CD2, and the vertical axis represents the intensity of the second light in the second band generated in the second emitting layer EML2. FIG. 18In the embodiment, the 2-2 graph PL22 exemplarily illustrates a change in intensity of green light in the embodiment.

[0192] By controlling the second resonant distance CD2, there is substantially no intensity difference, but a resonant distance having a peak intensity can be designed. The length at which the first peak intensity occurs in the 2-2 graph PL22 can be greater than the length at which the first peak intensity occurs in the 1-2 graph (see FIG. 18 PL12). In the embodiment of the disclosure, the second resonant distance CD2 can be set to be substantially the same (or similar) as the length at which the first peak intensity occurs in the 2-2 graph PL22. To this end, the first resonant auxiliary structure RALa can be disposed between the second sub-anode electrode SAE2 and the second anode electrode AE2. The first resonant auxiliary structure RALa can have a first thickness THK_RALa in the third direction DR3. Accordingly, in the embodiment, the first resonant auxiliary structure RALa can compensate for the second resonant distance CD2 by the first thickness THK_RALa in the region in which the second sub-pixel SP2 is provided. Accordingly, the second resonant distance CD2 can be set to be substantially the same (or similar) as the length at which the first peak intensity occurs in the 2-2 graph PL22.

[0193] Referring to FIG. 18 As described above, the first resonant auxiliary structure RALa can compensate for each of the second optical distance OD2 and the second resonant distance CD2 by the first thickness THK_RALa. Accordingly, in the embodiment, the second optical distance OD2 can be set to be substantially the same (or similar) as the length at which the first peak intensity occurs in the 2-1 graph PL21. In addition, the second resonant distance CD2 can be set to be substantially the same (or similar) as the length at which the first peak intensity occurs in the 2-2 graph PL22. Accordingly, in the embodiment, it is possible to secure a high light extraction efficiency of light emitted from the second emission layer EML2.

[0194] In the embodiment, the first thickness THK_RALa can be about 150 angstroms or more and about 350 angstroms or less. In such an embodiment, an optimal second optical distance OD2 and an optimal second resonant distance CD2 can be set.

[0195] FIG. 10 is a cross-sectional view taken along a line I3-I4 of FIG. 14 is a cross-sectional view taken along a line I3-I4 of FIG. 12 is a cross-sectional view taken along a line I3-I4 of FIG. 16 to FIG. 18 is a cross-sectional view taken along a line I3-I4 of

[0196] Referring to FIG. 19 and FIG. 20In an embodiment, the pixel circuit layer PCL, the display element layer DPL, and the light functional layer LFL can be sequentially disposed on the substrate SUB.

[0197] The pixel circuit layer PCL can be substantially the same (or similar) to the pixel circuit layer PCL described above with reference to FIG. 19 In an embodiment, for example, the pixel circuit layer PCL can include various components that constitute the sub-pixel circuit (see FIG. 6 to FIG. 18 of the third sub-pixel SP3.

[0198] The display element layer DPL can be disposed on the pixel circuit layer PCL. The display element layer DPL can include the third anode electrode AE3, the second resonance auxiliary structure RALb, the third sub-anode electrode SAE3, the dam structure DAM, the first common layer CML1, the emission stack ESTK, the second common layer CML2, the cathode electrode CE, the cap layer CPL, and the encapsulation layer TFE.

[0199] The third anode electrode AE3 can be disposed on the pixel circuit layer PCL. The third anode electrode AE3 can be electrically connected to at least one transistor among the transistors that constitute the sub-pixel circuit SPC of the third sub-pixel SP3.

[0200] The third anode electrode AE3 can include a third lower transparent electrode LE3, a third reflective electrode RE3, and a third upper transparent electrode UE3, which are sequentially stacked in the third direction DR3. The third lower transparent electrode LE3, the third reflective electrode RE3, and the third upper transparent electrode UE3 can be substantially the same (or similar) to the first lower transparent electrode LE1, the first reflective electrode RE1, and the first upper transparent electrode UE1 described above with reference to FIG. 19 Therefore, any repetitive detailed description thereof will be omitted.

[0201] The second resonance auxiliary structure RALb can be disposed on the third anode electrode AE3. In an embodiment, for example, a bottom surface of the second resonance auxiliary structure RALb can be in direct contact with a top surface of the third upper transparent electrode UE3. The second resonance auxiliary structure RALb can have a second thickness in the third direction DR3. In such an embodiment, high light extraction efficiency of light emitted from the third emission layer EML3 can be ensured by the second resonance auxiliary structure RALb. This will be described in more detail later with reference to FIG. 20

[0202] ​The third sub-anode electrode SAE3 can be disposed on the third anode electrode AE3 to cover the second resonance auxiliary structure RALb. The third sub-anode electrode SAE3 can be in electrical contact with the third anode electrode AE3. In an embodiment, for example, the third sub-anode electrode SAE3 can be in electrical contact with a non-overlapped surface of a top surface of the third upper transparent electrode UE3 that is not overlapped with the dam structure DAM and the second resonance auxiliary structure RALb. In such an embodiment, an outer peripheral surface of the second resonance auxiliary structure RALb can be directly covered by the third sub-anode electrode SAE3 and the third upper transparent electrode UE3. The third sub-anode electrode SAE3 can be configured to be substantially transparent or translucent to satisfy a certain light transmittance. In an embodiment, for example, the third sub-anode electrode SAE3 can include the same material as that of the first sub-anode electrode SAE1.

[0203] In an embodiment, in a case where the third sub-anode electrode SAE3 is disposed to cover the second resonance auxiliary structure RALb, a sufficient contact area between the third sub-anode electrode SAE3 and the first common layer CML1 can be secured. Accordingly, a driving efficiency of the third sub-pixel SP3 can be improved.

[0204] The dam structure DAM can be substantially the same (or similar) as the dam structure DAM described above with reference to FIG. 20 In an embodiment, for example, the dam structure DAM can be configured to overlap with an edge of the third anode electrode AE3 and surround the third anode electrode AE3. In another embodiment, for example, the dam structure DAM can be configured to overlap with a portion of an edge of the third anode electrode AE3. In a region where the dam structure DAM is provided, the dam structure DAM can cover a side surface of the third anode electrode AE3. In a region where the dam structure DAM is provided, the dam structure DAM can be in direct contact with a top surface of the third anode electrode AE3.

[0205] The first common layer CML1 can be substantially the same (or similar) as the first common layer CML1 described above with reference to FIG. 21 The first common layer CML1 can be disposed between the third sub-anode electrode SAE3 and the emission stack ESTK. The first common layer CML1 can be continuously disposed in an entire region where the first to third sub-pixels SP1, SP2, and SP3 are provided, but can be discontinuous over the dam structure DAM.

[0206] The emission stack ESTK can be substantially the same (or similar) as the emission stack ESTK described above with reference to FIG. 22 The emission stack ESTK can be continuously disposed in an entire region where the first to third sub-pixels SP1, SP2, and SP3 are provided.

[0207] The second common layer CML2 can be substantially the same (or similar) as the second common layer CML2 described above with reference toFIG. 21 The second common layer CML2 is substantially the same (or similar) as described above with reference to the first common layer CML1. The second common layer CML2 can be continuously disposed in the entire area providing the first to third sub-pixels SP1, SP2 and SP3.

[0208] The first common layer CML1, the emission stack layer ESTK and the second common layer CML2 can define the light emitting device of the third sub-pixel SP3 (see FIG. 1A). FIG. 22 The third sub-pixel SP3 can be provided in a series structure including two or more emission layers configured to emit a plurality of light having different wavebands.

[0209] The cathode electrode CE can be substantially the same (or similar) as described above with reference to the cathode electrode CE. FIG. 21 The cathode electrode CE can be continuously disposed in the entire area providing the first to third sub-pixels SP1, SP2 and SP3.

[0210] The capping layer CPL and the encapsulation layer TFE can be substantially the same (or similar) as described above with reference to the capping layer CPL and the encapsulation layer TFE. FIG. 22 The capping layer CPL and the encapsulation layer TFE can be continuously disposed in the entire area providing the first to third sub-pixels SP1, SP2 and SP3.

[0211] The light function layer LFL can be disposed on the encapsulation layer TFE. The light function layer LFL can include a color filter layer including a color filter and / or a light conversion pattern having color conversion particles and / or scattering particles. In an embodiment, in the area providing the third sub-pixel SP3, the light function layer LFL can include a red color filter selectively transmitting red light. However, the light function layer LFL is not limited thereto.

[0212] FIG. 23 to FIG. 28 is a magnified cross-sectional view of the area AR3 of FIG. 6 FIG. 23 and FIG. 24 is a graph showing the intensity of light emitted from the third emission layer as the optical distance in the third sub-pixel changes.

[0213] Referring to FIG. 25 and FIG. 26 ​The third sub-pixel SP3 of the present disclosure can have a third optical distance OD3. The third optical distance OD3 can be a distance in which light generated in the emission stack layer ESTK is reflected from a reflection interface and resonates. The reflection interface can be defined on a top surface of the third reflection electrode RE3 and a bottom surface of the cathode electrode CE. The third optical distance OD3 can be defined by a physical distance from the top surface of the third reflection electrode RE3 to the bottom surface of the cathode electrode CE and refractive indexes of the components UE3, RALb, SAE3, CML1, ESTK, and CML2 between the third reflection electrode RE3 and the cathode electrode CE. For example, the third optical distance OD3 can satisfy Equation 3-1 below.

[0214] [Equation 3-1]

[0215] OD3 = (N UE3 × T UE3 ) + (N RALb × T RALb ) + (N SAE3 × T SAE3 ) + (N CML1 × T CML1 )

[0216] + (N ESTK × T ESTK ) + (N CML2 × T CML2 )

[0217] In Equation 3-1 above, N UE3 , N RALb , N SAE3 , N CML1 , N ESTK , and N CML2 denote the refractive indexes of the third upper transparent electrode UE3, the second resonance auxiliary structure RALb, the third sub-anode electrode SAE3, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2, respectively.

[0218] In Equation 3-1, T UE3 , T RALb , T SAE3 , T CML1 , T ESTK , and T CML2 denote the thicknesses of the third upper transparent electrode UE3, the second resonance auxiliary structure RALb, the third sub-anode electrode SAE3, the first common layer CML1, the emission stack layer ESTK, and the second common layer CML2 in the third direction DR3, respectively.

[0219] Here, T RALb may be the second thickness THK_RALb which will be described later.

[0220] In an embodiment, the third sub-pixel SP3 can have a third resonance distance CD3 corresponding to the third emission layer EML3. The third resonance distance CD3 can be a distance at which light generated at an emission center of the third emission layer EML3 is reflected from a top surface of the third reflective electrode RE3 as a reflection interface and resonates. The emission center of the third emission layer EML3 can correspond to a center portion at which light generated in the third emission layer EML3 is emitted. In an embodiment, for example, the emission center of the third emission layer EML3 can be a point that is half of a thickness of the third emission layer EML3. The third resonance distance CD3 can be defined by a physical distance from the emission center of the third emission layer EML3 to the top surface of the third reflective electrode RE3 and refractive indexes of elements UE3, RALb, SAE3, CML1, EML1, EBUF1, EML2, and EML3 between the emission center of the third emission layer EML3 and the third reflective electrode RE3. For example, the third resonance distance CD3 can satisfy Equation 3-2 below.

[0221] [Equation 3-2]

[0222] CD3 = (N UE3 × T UE3 ) + (N RALb × T RALb ) + (N SAE3 × T SAE3 ) + (N CML1 × T CML1 )

[0223] + (N EML1 × T EML1 ) + (N EBUF1 × T EBUF1 ) + (N EML2 × T EML2 ) + (N EML3 × 0.5T EML3 )

[0224] In Equation 3-2, N UE3 , N RALb , N SAE3 , N CML1 , T UE3 , T RALb , T SAE3 , and T CML1 are the same as those in Equation 3-1 above.

[0225] In Equation 3-2, N EML1 , N EBUF1 , N EML2 , and N EML3nEML1, nEBUF1, nEML2, and nEML3 respectively denote the refractive indexes of the first emission layer EML1, the first light buffering layer EBUF1, the second emission layer EML2, and the third emission layer EML3.

[0226] In Equation 3-2, T EML1 , T EBUF1 , T EML2 , and T EML3 denote the thicknesses of the first emission layer EML1, the first light buffering layer EBUF1, the second emission layer EML2, and the third emission layer EML3 in the third direction DR3, respectively.

[0227] Referring to FIG. 27 and FIG. 28 , a first third graph (hereinafter, will be referred to as a “3-1 graph”) PL31 is illustrated in FIG. 7 . In the 3-1 graph PL31, the horizontal axis denotes the third optical distance OD3, and the vertical axis denotes the intensity of the third light of the third wavelength band generated in the third emission layer EML3. In FIG. 11 , the 3-1 graph PL31 exemplarily illustrates the variation of the intensity of red light in the embodiment.

[0228] The light emitted from the third emission layer EML3 has a peak intensity at each specific third optical distance OD3. The peak intensity can correspond to a resonant state of the light emitted from the third emission layer EML3, and tends to decrease as the third optical distance OD3 increases. In an embodiment in which the length having the peak intensity is set as the third optical distance OD3, high light extraction efficiency of the light emitted from the third emission layer EML3 can be ensured.

[0229] The length at which the first peak intensity appears in the 3-1 graph PL31 can be greater than the length at which the first peak intensity appears in the 1-1 graph (see the PL11 of FIG. 15 ). The length at which the first peak intensity appears in the 3-1 graph PL31 can be greater than the length at which the first peak intensity appears in the 2-1 graph (see the PL21 of FIG. 29 ). In the present disclosure, the third optical distance OD3 can be set to be substantially the same (or similar) as the length at which the first peak intensity appears in the 3-1 graph PL31. To this end, a second resonant auxiliary structure RALb can be disposed between the third sub-anode electrode SAE3 and the third anode electrode AE3. The second resonant auxiliary structure RALb can have a second thickness THK_RALb in the third direction DR3. The second thickness THK_RALb can be greater than the first thickness (see the PL11 of FIG. 29(THK_RALa). Accordingly, in the embodiment, in the region providing the third sub-pixel SP3, the second resonant auxiliary structure RALb can compensate for the third optical distance OD3 by the second thickness THK_RALb. Accordingly, the third optical distance OD3 can be set to be substantially the same (or similar) as the length at which the first peak intensity appears in the 3-1 curve PL31.

[0230] refer to FIG. 1 and FIG. 1 ,exist FIG. 30 to FIG. 33 The second and third curves (hereinafter referred to as the "3-2 curve") PL32 are shown. In the 3-2 curve PL32, the horizontal axis represents the third resonant distance CD3, and the vertical axis represents the intensity of the third light in the third band generated in the third emission layer EML3. FIG. 29 In the example, graph PL32 in section 3-2 illustrates the variation in the intensity of red light in the embodiment.

[0231] By controlling the third resonant distance CD3, there is essentially no intensity difference, but a resonant distance with peak intensity can be designed. The length at which the first peak intensity appears in curve PL32 (3-2) can be greater than the length at which the first peak intensity appears in curve 1-2 (see...). FIG. 30 The length of the first peak intensity appearing in PL12). The length of the first peak intensity appearing in PL32 in the 3-2 curve can be greater than the length of the first peak intensity appearing in the 2-2 curve (see PL12). FIG. 29 The length appearing in PL22). In embodiments of this disclosure, the third resonant distance CD3 can be set to be substantially the same (or similar) to the length of the first peak intensity appearing in the 3-2 curve PL32. In such an embodiment, the second resonant auxiliary structure RALb can be disposed between the third sub-anode electrode SAE3 and the third anode electrode AE3. The second resonant auxiliary structure RALb can have a second thickness THK_RALb on the third directional DR3. The second thickness THK_RALb can be greater than the first thickness (see PL22). FIG. 31 (THK_RALa). Accordingly, in the region providing the third sub-pixel SP3, the second resonant auxiliary structure RALb can compensate for the third resonant distance CD3 by the second thickness THK_RALb. Accordingly, the third resonant distance CD3 can be set to be substantially the same (or similar) as the length at which the first peak intensity appears in the 3-2 curve PL32.

[0232] refer to FIG. 29As described above, the second resonance auxiliary structure RALb can compensate for each of the third optical distance OD3 and the third resonance distance CD3 by the second thickness THK_RALb. Accordingly, the third optical distance OD3 can be set to be substantially the same (or similar) as a length at which a first peak intensity occurs in the 3-1 graph PL31. In addition, the third resonance distance CD3 can be set to be substantially the same (or similar) as a length at which a first peak intensity occurs in the 3-2 graph PL32. Accordingly, high light extraction efficiency of light emitted from the third emission layer EML3 can be secured.

[0233] In an embodiment, the second thickness THK_RALb can be about 400 angstroms or more and about 600 angstroms or less. In such an embodiment, an optimal third optical distance OD3 and an optimal third resonance distance CD3 can be set.

[0234] FIG. 32 is a graph illustrating intensity of light emitted from a pixel including a first resonance auxiliary structure and a second resonance auxiliary structure with respect to each wavelength. FIG. 29 is a graph illustrating intensity of light emitted from a pixel not including a first resonance auxiliary structure and a second resonance auxiliary structure with respect to each wavelength.

[0235] Reference FIG. 33 In the graph PLE, intensity of light emitted from a pixel (see FIG. 29 PXL) including a first resonance auxiliary structure RALa and a second resonance auxiliary structure RALb with respect to each wavelength is illustrated. Referring to the graph PLE, ​ it can be confirmed that intensity of light having a first wavelength W1 (e.g., blue light) is substantially the same (or similar) as intensity of light having a second wavelength W2 (e.g., green light). In addition, it can be confirmed that intensity of light having a third wavelength W3 (e.g., red light) is not excessively low.

[0236] Reference ​ In the graph PLC, intensity of light emitted from a pixel not including a first resonance auxiliary structure RALa and a second resonance auxiliary structure RALb with respect to each wavelength is illustrated. Referring to the graph PLC, ​ it can be confirmed that intensity of light having a second wavelength W2 and intensity of light having a third wavelength W3 are very low compared to intensity of light having a first wavelength W1. Accordingly, it can be confirmed that light efficiency of light having a second wavelength W2 and light having a third wavelength W3 emitted from the pixel PXL is deteriorated when the first resonance auxiliary structure RALa and the second resonance auxiliary structure RALb are omitted.

[0237] ​ is a graph illustrating a relationship between light reflectance and lithium content in a cathode electrode. ​This is a graph showing the relationship between light absorption rate and lithium content in the cathode electrode.

[0238] refer to ​ and ​ In an embodiment, the cathode electrode CE may comprise lithium (Li)-doped silver (Ag). Based on the total mass of the lithium (Li)-doped silver (Ag), the lithium (Li)-doped silver (Ag) may comprise more than about 5% by mass and less than about 50% by mass (e.g., about 10% by mass or more and about 30% by mass or less) of lithium (Li). Furthermore, the cathode electrode CE may be provided with a thickness of about 10 angstroms or more and about 20 angstroms or less.

[0239] When the lithium (Li) content in lithium-doped silver (Ag) meets the above-mentioned numerical range, such as ​ As shown, regarding the first to third rays L1, L2, and L3 emitted from the first to the third emitting layers EML1, EML2, and EML3 respectively, the cathode electrode CE can have a specific level or higher reflectivity. Accordingly, the first to third rays L1, L2, and L3 can effectively resonate between the cathode electrode CE and the first to third reflecting electrodes RE1, RE2, and RE3. Here, the first ray L1 can be blue light, the second ray L2 can be green light, and the third ray L3 can be red light.

[0240] Additionally, when the lithium (Li) content in lithium-doped silver (Ag) meets the above-mentioned numerical range, such as ​ As shown, the cathode electrode CE can have a relatively low light absorptivity for the first to third light beams L1, L2, and L3 emitted from the first to the third emitting layers EML1, EML2, and EML3, respectively. Accordingly, it is possible to effectively prevent the first to third light beams L1, L2, and L3 from being absorbed and lost by the cathode electrode CE.

[0241] ​ It shows the manufacturing process. ​ A cross-sectional view of an embodiment of the pixel method.

[0242] refer to ​ In an embodiment of the method for manufacturing pixels, after forming a pixel circuit layer PCL on a substrate SUB, a first anode electrode to a third anode electrode AE1, AE2 and AE3 may be formed on the pixel circuit layer PCL.

[0243] In this operation, the first to third lower transparent electrodes LE1, LE2 and LE3 can be formed by substantially the same formation process as each other, the first to third reflective electrodes RE1, RE2 and RE3 can be formed by substantially the same formation process as each other, and the first to third upper transparent electrodes UE1, UE2 and UE3 can be formed by substantially the same formation process as each other.

[0244] In an embodiment, for example, a first transparent electrode layer formed of a material constituting the first to third lower transparent electrodes LE1, LE2 and LE3, a reflective electrode layer formed of a material constituting the first to third reflective electrodes RE1, RE2 and RE3, and a second transparent electrode layer formed of a material constituting the first to third upper transparent electrodes UE1, UE2 and UE3 are sequentially formed on the pixel circuit layer PCL, and then, the first transparent electrode layer, the reflective electrode layer and the second transparent electrode layer can be patterned.

[0245] Referring to ​ An inorganic insulating layer IIL can be formed on the pixel circuit layer PCL. The inorganic insulating layer IIL can cover the first to third anode electrodes AE1, AE2 and AE3.

[0246] Referring to ​ The inorganic insulating layer IIL can be partially etched. In an embodiment, in a region overlapping with a portion of a region in which the third sub-pixel SP3 is provided, the inorganic insulating layer IIL can be substantially not etched. In such an embodiment, the inorganic insulating layer IIL can be etched to have a relatively low thickness in a region other than the above-mentioned region overlapping with a portion of a region in which the third sub-pixel SP3 is provided.

[0247] Referring to ​ The inorganic insulating layer IIL can be partially etched to form the dam structure DAM, the first resonance auxiliary structure RALa and the second resonance auxiliary structure RALb. Accordingly, the dam structure DAM, the first resonance auxiliary structure RALa and the second resonance auxiliary structure RALb can be formed by substantially the same formation process as each other.

[0248] Referring to ​ The transparent electrode layer ITO can be completely formed. The transparent electrode layer ITO can be formed by, for example, a sputtering method.

[0249] Referring to ​ The transparent electrode layer ITO can be partially etched. Accordingly, the first to third sub-anode electrodes SAE1, SAE2 and SAE3 can be formed. Accordingly, the first to third sub-anode electrodes SAE1, SAE2 and SAE3 can be formed by substantially the same formation process as each other.

[0250] Subsequently, the first common layer CML1, the emission stack layer ESTK, the second common layer CML2, and the cathode electrode CE described above with reference to ​ , ​ , ​ , etc. can be sequentially formed. In this process, the first common layer CML1, the emission stack layer ESTK, the second common layer CML2, and the cathode electrode CE can be provided over the entire surface by using a blanket deposition process.

[0251] ​ is a block diagram illustrating a display system according to an embodiment.

[0252] Referring to ​ , an embodiment of the display system 1000 can include a processor 1100 and a display device 1200.

[0253] The processor 1100 can perform various tasks and calculations. In an embodiment, the processor 1100 can include an application processor, a graphic processor, a microprocessor, a central processing unit (CPU), etc. The processor 1100 can be connected to other components of the display system 1000 through a bus system and control the components of the display system 1000.

[0254] The processor 1100 can transmit image data IMG and a control signal CTRL to the display device 1200. The display device 1200 can display an image based on the image data IMG and the control signal CTRL. The display device 1200 can be configured similarly to the display device DD described with reference to ​ . In this case, the image data IMG and the control signal CTRL can be provided as the input image data IMG and the control signal CTRL of ​ , respectively.

[0255] The display system 1000 can include a computing system providing an image display function such as a smart watch, a mobile phone, a smart phone, a portable computer, a tablet personal computer, a watch phone, a car display, smart glasses, a portable multimedia player (PMP), a navigation system, or an ultra-mobile personal computer (UMPC). In addition, the display system 1000 can include at least one selected from a head-mounted display (HMD), a virtual reality (VR) device, a mixed reality (MR) device, and an augmented reality (AR) device.

[0256] ​ is a perspective view illustrating an application example of the display system of ​ .

[0257] Referring to ​ , ​The display system 1000 according to an embodiment of the disclosure can be applied to a smart watch 2000 including a display unit 2100 and a band portion 2200.

[0258] The smart watch 2000 can be a wearable electronic device. For example, the smart watch 2000 can have a structure in which the band portion 2200 is mounted on a wrist of a user. Here, the display system 1000 and / or the display device 1200 can be applied to the display unit 2100, and can provide image data including time information to the user.

[0259] Referring to FIG. 2, ​ , ​ The display system 1000 according to an embodiment of the disclosure can be applied to a car display system 3000. Here, the car display system 3000 can include a computing system provided inside and / or outside a vehicle to provide image data.

[0260] For example, the display system 1000 and / or the display device 1200 can be applied to at least one of an infotainment panel 3100, an instrument panel 3200, a co-driver display 3300, a head-up display 3400, a side mirror display 3500, and a rear seat display 3600 provided in a vehicle.

[0261] Referring to FIG. 3, ​ , ​ The display system 1000 according to an embodiment of the disclosure can be applied to smart glasses 4000. The smart glasses 4000 can be a wearable electronic device that can be worn on a head of a user. For example, the smart glasses 4000 can be a wearable device for augmented reality.

[0262] The smart glasses 4000 can include a frame 4100 and a lens unit 4200. The frame 4100 can include a housing 4110 supporting the lens unit 4200 and a leg portion 4120 wearable on a user. The leg portion 4120 can be connected to the housing 4110 through a hinge, and can be folded or unfolded with respect to the housing 4110.

[0263] The frame 4100 can have a battery, a touch pad, a microphone, a camera, etc. embedded therein. In addition, the frame 4100 can include a projector outputting light, a processor controlling a light signal, etc. embedded therein.

[0264] The lens unit 4200 can include an optical member transmitting or reflecting light. For example, the lens unit 4200 can include glass, transparent synthetic resin, etc.

[0265] To enable the user's eyes to recognize visual information, the lens unit 4200 can reflect an image generated from an optical signal transmitted from the projector of the frame 4100 to a rear surface (e.g., a surface facing the user's eyes) of the lens unit 4200. For example, the user can recognize visual information such as time and date displayed on the lens unit 4200. In such an embodiment, the projector and / or the lens unit 4200 can be a kind of display apparatus. The display apparatus 1200 can be applied to the projector and / or the lens unit 4200.

[0266] Reference ​ , ​ The display system 1000 of the related art can be applied to the HMD apparatus 5000.

[0267] The HMD apparatus 5000 can be a wearable electronic apparatus that can be worn on the head of a user. For example, the HMD apparatus 5000 can be a wearable apparatus for virtual reality or mixed reality.

[0268] The HMD apparatus 5000 can include a head-mounted band (or headband) 5100 and a display apparatus storage case 5200. The head-mounted band 5100 can be connected to the display apparatus storage case 5200. The head-mounted band 5100 can include a horizontal band and / or a vertical band for fixing the HMD apparatus 5000 to the head of a user. The horizontal band can be configured to surround the side of the head of the user, and the vertical band can be configured to surround the upper portion of the head of the user. However, embodiments are not limited thereto. For example, the head-mounted band 5100 can be implemented in the form of a spectacle frame, a helmet, or the like.

[0269] The display apparatus storage case 5200 can accommodate the display system 1000 and / or the display apparatus 1200.

[0270] A display apparatus according to an embodiment of the disclosure can include a resonance-assisting structure disposed between an anode electrode and a sub-anode electrode. In such an embodiment, the resonance-assisting structure can serve to provide an optical distance (or resonance distance) to effectively resonate light in a specific waveband. Accordingly, the display apparatus including the resonance-assisting structure can have a high light extraction efficiency.

[0271] The present application should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the concept of the present application to those skilled in the art.

[0272] While the present application has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details can be made therein without departing from the spirit or scope of the application as defined by the appended claims.

Claims

1. A display device comprising: a first anode electrode, a second anode electrode, and a third anode electrode disposed on a pixel circuit layer and spaced apart from each other; a first resonance assist structure disposed on the second anode electrode and having a first thickness; a second resonance assist structure disposed on the third anode electrode and having a second thickness greater than the first thickness; a first sub-anode electrode disposed on the first anode electrode and in electrical contact with the first anode electrode; a second sub-anode electrode disposed on the second anode electrode to cover the first resonance assist structure and in electrical contact with the second anode electrode; a third sub-anode electrode disposed on the third anode electrode to cover the second resonance assist structure and in electrical contact with the third anode electrode; a cathode electrode disposed on the first anode electrode through the third anode electrode; and an emission stack disposed between the cathode electrode and the first sub-anode electrode through the third sub-anode electrode, wherein the emission stack includes a first emission layer, a second emission layer, and a third emission layer stacked sequentially one after another. The first resonance assist structure and the second resonance assist structure each include an inorganic insulating material.

2. The display device according to claim 1, wherein The first sub-anode electrode through the third sub-anode electrode each include a light-transmissive metal oxide.

3. The display device according to claim 1, wherein The first emission layer emits light in a first waveband, 4. The display device according to claim 1, wherein The second emission layer emits light in a second waveband different from the first waveband, and The third emission layer emits light in a third waveband different from the first waveband and the second waveband. The cathode electrode includes lithium-doped silver, and 5. The display device according to claim 1, wherein The lithium-doped silver includes greater than 5 mass% and less than 50 mass% of lithium, based on a total mass of the lithium-doped silver.

6. The display device of claim 1, further comprising: a dam structure disposed between two adjacent anode electrodes among the first anode electrode through the third anode electrode. The dam structure includes a same material as materials of the first resonance assist structure and the second resonance assist structure.

7. The display device of claim 6, wherein, The dam structure is in contact with a top surface of each of the two adjacent anode electrodes.

8. The display device of claim 6, wherein, 9. The display device of claim 6, further comprising: a first common layer disposed between the emission stack and the first sub-anode electrode through the third sub-anode electrode, wherein a portion of the first common layer on a top surface of the dam structure is disconnected from a portion of the first common layer on a side surface of the dam structure. The emission stack is continuously disposed between the cathode electrode and the first sub-anode electrode through the third sub-anode electrode.

10. The display device according to any one of claims 1 to 9, wherein, 11. A display device comprising: a first anode electrode and a second anode electrode disposed on a pixel circuit layer and spaced apart from each other; a first resonance assist structure disposed on the second anode electrode and having a first thickness; a first sub-anode electrode disposed on the first anode electrode and in electrical contact with the first anode electrode; ​ a second sub-anode electrode disposed on the second anode electrode to cover the first resonance auxiliary structure and in electrical contact with the second anode electrode; a cathode electrode disposed on the first anode electrode and the second anode electrode; and a first sub-anode electrode disposed on the first anode electrode to cover the first resonance auxiliary structure and in electrical contact with the first anode electrode. The first anode electrode includes a first reflective electrode, and a first optical distance between a top surface of the first reflective electrode and a bottom surface of the cathode electrode is in a range from 700 angstroms to 800 angstroms.

12. The display device of claim 11, wherein, a first resonance distance between the top surface of the first reflective electrode and a center of emission of the first emissive layer is in a range from 250 angstroms to 300 angstroms. The second emissive layer is configured to emit second light having a wavelength in a range from 500 nm to 540 nm.

13. The display device of claim 12, wherein, The first thickness is in a range from 150 angstroms to 350 angstroms.

14. The display device of claim 13, wherein, The emissive stack further includes a third emissive layer disposed on the second emissive layer, and 15. The display device of claim 14, wherein, The third emissive layer emits third light having a wavelength in a range from 610 nm to 650 nm.

16. The display device of claim 13, wherein, 17. The display device of claim 16, further comprising: a third anode electrode disposed on the pixel circuit layer and spaced apart from the first anode electrode and the second anode electrode; a second resonance auxiliary structure disposed on the third anode electrode and having a second thickness; and a third sub-anode electrode disposed on the third anode electrode to cover the second resonance auxiliary structure and in electrical contact with the third anode electrode. The second thickness is in a range from 400 angstroms to 600 angstroms. The emissive stack is disposed continuously on the pixel circuit layer and the first sub-anode electrode and the second sub-anode electrode. The cathode electrode includes lithium-doped silver, and 18. The display device of claim 17, wherein, The lithium-doped silver includes greater than 5 mass% and less than 50 mass% of lithium, based on a total mass of the lithium-doped silver.

19. The display device of claim 11, wherein, ​ 20. A display device according to any one of claims 11-19, wherein, ​ ​

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