Micro-display chip structure and manufacturing method

Abstract

The invention discloses a micro-display chip structure and a manufacturing method, the micro-display chip structure comprises an organic supporting substrate, and a light conversion layer, an annular light blocking layer, a self-luminous unit and other multi-layer structures which are sequentially arranged on the surface of the organic supporting substrate, each layer realizes interconnection through a window, and a light filtering layer can be additionally arranged to improve the color purity; the manufacturing method comprises the steps of wafer pretreatment, multi-layer structure preparation, bonding and substrate removal, cutting and the like to complete chip manufacturing. The self-luminous unit emits blue light to be matched with the light conversion layer to achieve RGB three-color display, the RGB integration mode is simplified, dependence on mass transfer is reduced, meanwhile, the annular light blocking layer and other structures are used for restraining light crosstalk, the production cost is reduced, the display effect is improved, and the Mi cro LED display panel is suitable for Mi cro LED high-integration-level display scenes.

Description

Technical Field

[0001] This invention relates to the field of LED display technology, and more specifically to a micro display chip structure and manufacturing method. Background Technology

[0002] Micro LED display technology refers to a display technology that uses self-emissive, micrometer-sized LEDs as light-emitting pixel units and assembles them onto a driving panel to form a high-density LED array. Due to the small size, high integration, high brightness, and self-emissive characteristics of Micro LED chips, it has greater advantages over LCD and OLED in terms of brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability.

[0003] However, existing Micro LED technology still faces many bottlenecks that limit its large-scale commercial application:

[0004] 1. It is very difficult to grow RGB three-color Micro LEDs with different wavelengths on the same substrate; this method requires precise alignment of each sub-pixel and driving of each of the three colors separately, resulting in complex driving circuits and extremely high costs.

[0005] 2. Micro LEDs are smaller than 50μm, which is not compatible with traditional display panel technologies. For example, in terms of electrical testing, the cost of EL testing for Micro LEDs is more than 20 times higher than that of existing mature EL testing methods for sizes above 100μm.

[0006] 3. Micro LED requires the mass transfer of hundreds of millions of LED chips at once, with a yield rate of over 99.9999%. Current small-size mass transfer technology cannot meet this yield requirement, resulting in high costs for Micro LED and hindering its rapid adoption.

[0007] To address the aforementioned issues, this invention proposes a micro-display chip structure and manufacturing method. By simplifying the RGB three-color integration method and optimizing process compatibility, it reduces production costs and promotes the industrial application of Micro LED technology. Summary of the Invention

[0008] The purpose of this invention is to overcome the problems of difficult growth of RGB three-color chips, high electrical testing costs, and high costs due to low yield of mass transfer in existing Micro LED technology, and to provide a micro display chip structure and manufacturing method that simplifies the integration of RGB three-color chips and reduces production costs.

[0009] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0010] A microdisplay chip structure, comprising an organic support substrate;

[0011] A light conversion layer, an annular light blocking layer, and a self-emissive unit are disposed on the surface of the organic support substrate;

[0012] The self-emissive unit includes an epitaxial structure, a transparent conductive layer, and extended metal lines;

[0013] An insulating layer is provided on the organic support substrate, the self-emissive unit, and the annular light-blocking layer;

[0014] The insulating layer has windows;

[0015] Wiring lines are provided on the insulating layer;

[0016] The wiring lines are interconnected with the self-illuminating unit through windows in the insulating layer;

[0017] An insulating barrier layer is provided above the wiring lines and the insulating layer;

[0018] The insulating barrier layer has windows;

[0019] A bonding electrode is provided on the insulating barrier layer;

[0020] The bonding electrodes are interconnected with the wiring lines through windows in the insulating barrier layer.

[0021] In a preferred embodiment, a light filtering layer is provided between the organic support substrate and the light conversion layer.

[0022] In a preferred embodiment, the organic support substrate is a transparent PI, PET, epoxy resin, or acrylic organic material with a thickness of 10-200 μm and a transmittance of ≥90% in the 400-700 nm wavelength band.

[0023] In a preferred embodiment, the light conversion layer includes a green light conversion layer and a red light conversion layer, and when it is a red light conversion layer, its material is MAlSiN. xThe phosphor / quantum dot is composed of nitride phosphors / quantum dots of Re (1≤x≤5) or MD:Re phosphors / quantum dots, wherein M is selected from at least one of barium (Ba), strontium (Sr), and calcium (Ca), D is selected from at least one of sulfur (S), selenium (Se), and tellurium (Te), and Re is selected from at least one of europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm); when it is a green light conversion layer, the material is composed of silicate phosphors / quantum dots of M2SiO4:Re or MA2D4:Re phosphors / quantum dots, wherein M is selected from at least one of barium (Ba), strontium (Sr), and calcium (Ca), A is selected from at least one of calcium (Ca), aluminum (Al), and indium (In), D is selected from at least one of sulfur (S), selenium (Se), and tellurium (Te), and Re is selected from at least one of europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm).

[0024] In a preferred embodiment, the annular light blocking layer is a black material with high absorption and low reflectivity in the visible light range, selected from carbon black or iron oxide, which completely surrounds the light conversion layer, and the edge of the light conversion layer is located above the annular blocking layer.

[0025] In a preferred embodiment, the self-emissive unit is a blue light-emitting microchip, comprising a negative polarity layer, a quantum well light-emitting layer, a positive polarity layer, and extended metal circuitry, and its outer dimensions do not exceed the annular light-blocking layer.

[0026] In a preferred embodiment, the insulating layer is a black organic material selected from PI, epoxy resin or acrylic acid doped with carbon black, with a transmittance ≤2.0% and a reflectance ≤5.0%, and overlaps with the annular light blocking layer with an overlap size of 1-10μm. Its window extends from the top to the extended metal line of the self-luminous unit, and the aperture size gradually increases from the bottom surface to the top surface.

[0027] In a preferred embodiment, the wiring is a metal stack material of Ti, Cr, Ni, Pt, and Au, with a thickness of 0.3-2.0 μm.

[0028] In a preferred embodiment, the insulating barrier layer is an organic material selected from PI, epoxy resin, or silicone, with a thickness of 5-30 μm. Its window extends from the top to the wiring line, and the aperture size gradually increases from the bottom to the top.

[0029] In a preferred embodiment, the bonding electrode is a metal stack, the material of which is selected from metals such as Cr, Ni, Pt, Ti, Au, Al, Sn, Ag, Cu or their alloys, the top layer material is Au or an alloy of Sn, Ag, Cu, and the thickness is 0.8-10.0 μm.

[0030] In addition, this application also proposes a method for manufacturing a microdisplay chip, including the following steps:

[0031] S1, providing a blue light wafer, the blue light wafer including a sapphire substrate and a self-emissive unit containing an epitaxial structure thereon;

[0032] S2, through photolithography, etching, and resist removal, partially etches away the epitaxial structure of the self-emissive unit to expose the sapphire substrate;

[0033] S3, through photolithography, etching, and resist removal, the positive polarity layer and quantum well light-emitting layer in the epitaxial structure of the self-emissive unit are etched away to expose the negative polarity layer;

[0034] S4. A transparent conductive layer is fabricated on the positive polarity layer of the epitaxial structure of the self-emissive unit through deposition, photolithography, etching, resist removal, and alloying.

[0035] S5, through photolithography, evaporation, and resist removal, extended metal lines are fabricated on the positive and negative polarity layers of the epitaxial structure of the self-emissive unit;

[0036] S6. An isolation insulating layer is fabricated on the epitaxial structure by spin coating. Part of the isolation insulating layer is etched away by photolithography, etching, and resist removal to expose the extended metal lines of the epitaxial structure of the self-emissive unit and create a window of the isolation insulating layer.

[0037] S7 uses photolithography, vapor deposition, and resist removal to fabricate wiring lines on the insulating layer. The wiring lines are interconnected through the windows of the insulating layer and the extended metal lines of the epitaxial structure of the self-emissive unit.

[0038] S8, by spin coating, an isolation barrier layer is made on the wiring and the isolation barrier layer. Then, by photolithography, etching and resist removal, part of the isolation barrier layer is etched away to expose the wiring and create a window of the isolation barrier layer.

[0039] S9, bonding electrodes are fabricated on the isolation barrier layer by photolithography, evaporation, and stripping to remove the resist. The bonding electrodes are interconnected through the windows of the isolation barrier layer and the wiring lines.

[0040] S10, the wafer obtained in the above steps is bonded to the temporary substrate through a bonding layer by hot-press bonding.

[0041] S11 removes the sapphire substrate from the blue light wafer by laser debonding.

[0042] S12, through photolithography, evaporation, and stripping to remove resist, a ring-shaped light blocking layer is fabricated on the epitaxial structure of the self-emissive unit of the blue light wafer.

[0043] S13, a light conversion layer is fabricated on the epitaxial structure of the self-emissive unit of the blue light wafer by spin coating or printing.

[0044] S14, a transparent protective adhesive is coated on the light conversion layer, the annular light blocking layer and the epitaxial structure by spin coating, serving as an organic support substrate;

[0045] S15 removes the bonding layer and temporary substrate by laser debonding;

[0046] S16, cut to form a single chip.

[0047] Due to the application of the above technical solution, the beneficial effects of this application compared with the prior art are as follows:

[0048] This application provides a microdisplay chip structure and manufacturing method. By setting a light conversion layer, the blue light emitted by the self-emissive unit is converted into red and green light through the light conversion layer. This eliminates the need to grow RGB three-color Micro LEDs of different wavelengths on the same substrate, simplifying the process and reducing the requirements for precise alignment and separate driving, thereby reducing the complexity and cost of the driving circuit. At the same time, the structural design of this invention avoids a large number of mass transfer steps, reducing the dependence on mass transfer yield, further reducing production costs, and facilitating the rapid promotion and application of Micro LED display technology.

[0049] In addition, by setting up structures such as a ring-shaped light blocking layer and an insulating layer, crosstalk between different colors of light is effectively avoided, improving the display effect; the addition of a light filtering layer further enhances the selective transmission of light and optimizes the display performance. Attached Figure Description

[0050] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0051] Figure 1 This is a schematic diagram of a microdisplay chip structure according to the present invention;

[0052] Figure 2 This is another schematic diagram of a microdisplay chip structure according to the present invention;

[0053] Figure 3 This is a flowchart of a method for manufacturing a microdisplay chip according to the present invention;

[0054] Figure 4This is a schematic diagram of the chip structure in step S1 of the manufacturing method of the present invention;

[0055] Figure 5 This is a schematic diagram of the chip structure in step S2 of the manufacturing method of the present invention;

[0056] Figure 6 This is a schematic diagram of the chip structure in step S3 of the manufacturing method of the present invention;

[0057] Figure 7 This is a schematic diagram of the chip structure in step S4 of the manufacturing method of the present invention;

[0058] Figure 8 This is a schematic diagram of the chip structure in step S5 of the manufacturing method of the present invention;

[0059] Figure 9 This is a schematic diagram of the chip structure in step S6 of the manufacturing method of the present invention;

[0060] Figure 10 This is a schematic diagram of the chip structure in step S7 of the manufacturing method of the present invention;

[0061] Figure 11 This is a schematic diagram of the chip structure in step S8 of the manufacturing method of the present invention;

[0062] Figure 12 This is a schematic diagram of the chip structure in step S9 of the manufacturing method of the present invention;

[0063] Figure 13 This is a schematic diagram of the chip structure in step S10 of the manufacturing method of the present invention;

[0064] Figure 14 This is a schematic diagram of the chip structure in step S11 of the manufacturing method of the present invention;

[0065] Figure 15 This is a schematic diagram of the chip structure in step S12 of the manufacturing method of the present invention;

[0066] Figure 16 This is a schematic diagram of the chip structure in step S13 of the manufacturing method of the present invention;

[0067] Figure 17 This is a schematic diagram of the chip structure in step S14 of the manufacturing method of the present invention;

[0068] Figure 18 This is a schematic diagram of the chip structure in step S15 of the manufacturing method of the present invention;

[0069] Figure 19 This is a schematic diagram of the chip structure in step S16 of the manufacturing method of the present invention;

[0070] Among them, 1. Sapphire substrate; 2. Self-emissive unit; 3. Transparent conductive layer; 4. Extended metal circuit; 5. Isolation insulating layer; 6. Wiring circuit; 7. Isolation insulating barrier layer; 8. Bonding electrode; 9. Bonding layer; 10. Temporary substrate; 11. Annular light blocking layer; 12. Light conversion layer; 13. Organic support substrate; 14. Light filtering layer. Detailed Implementation

[0071] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0072] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0073] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing the invention and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0074] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in certain situations to indicate a dependency or connection. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0075] Furthermore, the terms "installation," "setup," "equipped with," "connection," "linking," and "socketing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0076] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0077] Example 1

[0078] Please see Figure 1 This application provides a microdisplay chip structure, including an organic support substrate 13;

[0079] A light conversion layer 12, an annular light blocking layer 11, and a self-emissive unit 2 are provided on the surface of the organic support substrate 13.

[0080] The self-luminescent unit 2 includes an epitaxial structure, a transparent conductive layer 3, and an extended metal circuit 4;

[0081] An insulating layer 5 is provided on the organic support substrate 13, the self-luminous unit 2 and the annular light blocking layer 11;

[0082] The insulating layer 5 has a window;

[0083] Wiring lines 6 are provided on the insulating layer 5;

[0084] The wiring line 6 is interconnected with the self-illuminating unit 2 through the window of the insulating layer 5;

[0085] An isolation and insulation barrier layer is provided above the wiring line 6 and the isolation insulation layer 5;

[0086] The insulating barrier layer has windows;

[0087] A bonding electrode 8 is provided on the insulating barrier layer;

[0088] The bonding electrode 8 is interconnected with the wiring line 6 through the window of the insulating barrier layer.

[0089] Furthermore, a light filter layer 14 is provided between the organic support substrate 13 and the light conversion layer 12 to selectively absorb and transmit light of different colors, thereby improving color purity.

[0090] Specifically, the technical features of each structure are as follows:

[0091] Organic support substrate 13: Made of transparent PI, PET, epoxy resin or acrylic organic material, with a thickness of 10-200μm, preferably 30-150μm, more preferably 50-100μm, and a transmittance of ≥90% in the 400-700nm wavelength band, providing mechanical support for the chip and ensuring light transmittance.

[0092] Light conversion layer 12: includes a green light conversion layer and a red light conversion layer, used to convert the blue light emitted by the self-emissive unit 2 into green light or red light. When the self-emissive unit 2 emits blue light, the red light conversion layer converts the received blue light into red light, and the green light conversion layer converts the received blue light into green light; wherein:

[0093] When it is used as a red light conversion layer, its material is MAlSiN. x Phosphors / quantum dots composed of Re (1≤x≤5) or phosphors / quantum dots composed of MD:Re, wherein M is selected from at least one of barium (Ba), strontium (Sr), and calcium (Ca), D is selected from at least one of sulfur (S), selenium (Se), and tellurium (Te), and Re is selected from at least one of europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm);

[0094] When it is a green light conversion layer, the material is a silicate phosphor / quantum dot composed of M2SiO4:Re or a phosphor / quantum dot composed of MA2D4:Re, wherein M is at least one selected from barium (Ba), strontium (Sr), and calcium (Ca), A is at least one selected from calcium (Ca), aluminum (Al), and indium (In), D is at least one selected from sulfur (S), selenium (Se), and tellurium (Te), and Re is at least one selected from europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm).

[0095] The annular light blocking layer 11 is made of a black material with high absorption and low reflectivity in the visible light range, such as carbon black or iron oxide. It completely surrounds the light conversion layer 12. To prevent light leakage, its outer edge size is larger than that of the light conversion layer 12, and the edge of the light conversion layer 12 is located above the annular blocking layer 11 to avoid crosstalk between different colors of light.

[0096] Self-emissive unit 2: is a blue light-emitting micro-chip, including a negative polarity layer, a quantum well light-emitting layer, a positive polarity layer and an extended metal circuit 4. Its outer dimension does not exceed the annular light blocking layer 11 to avoid crosstalk caused by light leakage.

[0097] The insulating layer 5 is made of black organic material, selected from PI, epoxy resin or acrylic acid doped with carbon black, with a transmittance of ≤2.0% and a reflectance of ≤5.0%. It overlaps with the annular light blocking layer 11, with an overlap size of 1-10μm, preferably 2-7μm, and more preferably 3-5μm, to further block light leakage. The insulating layer 5 has a window that extends from its top to the extended metal line 4 of the self-luminous unit 2. Its shape can be circular, elliptical, square, rhomboid, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface.

[0098] Wiring line 6: It is a metal multilayer material of Ti, Cr, Ni, Pt and Au with a thickness of 0.3-2.0μm. It is interconnected with the window of the insulating layer 5 and the extended metal line 4 of the self-emitting unit 2, thereby realizing the electrical connection between them and realizing the transmission of electrical signals.

[0099] The insulating barrier layer 7 is made of organic material, selected from PI, epoxy resin or silicone, with a thickness of 5-30μm, preferably 8-20μm, more preferably 10-15μm. It has a window that extends from the top to the wiring line 6. The window can be circular, elliptical, square, rhomboid, etc., and its aperture size is required to gradually increase from the bottom surface to the top surface. It is used to protect the wiring line 6 and provide interconnection channels for the bonding electrodes 8.

[0100] Bonding electrode 8: It is a metal stack, and the material is selected from metal materials such as Cr, Ni, Pt, Ti, Au, Al, Sn, Ag, Cu or their alloys. The top layer material is Au or an alloy of Sn, Ag, Cu, and the thickness is 0.8-10.0 μm. It is interconnected through the window of the isolation insulating barrier layer 7 and the wiring line 6, thereby realizing the electrical connection between the two.

[0101] Based on the above, a specific microdisplay chip structure is proposed, including:

[0102] Organic support substrate 13: Made of transparent PI material, 80μm thick, with 92% transmittance in the 400-700nm wavelength band;

[0103] Light conversion layer 12: includes a red light conversion layer (BaAlSiN3:Eu) and a green light conversion layer (Ba2SiO4:Eu);

[0104] Annular light blocking layer 11: carbon black material, surrounding the light conversion layer 12, with the edge of the light conversion layer 12 located above the annular blocking layer 11;

[0105] Self-emissive unit 2: Blue light micro-emissive chip, with an outer dimension smaller than the annular light blocking layer 11;

[0106] Insulating layer 5: PI material doped with carbon black, with a transmittance of 1.5% and a reflectance of 4.0%, overlapping with the annular light blocking layer 11 by 4μm, and the window is circular (smaller at the bottom and larger at the top);

[0107] Wiring line 6: Ti / Au stack (1.0μm thick), interconnected with extended metal line 4 through the window of the insulating layer 5;

[0108] Insulating barrier layer 7: PI material, 12μm thick, with square windows (smaller aperture at the bottom and larger aperture at the top);

[0109] Bonding electrode 8: Cr / Au stack (top layer Au, thickness 5.0 μm), interconnected with wiring line 6 through the window of the insulating barrier layer 7.

[0110] This structure achieves RGB display through blue light + light conversion, and the annular light blocking layer 11 effectively suppresses crosstalk, resulting in a clear display effect.

[0111] Example 2

[0112] In another embodiment of the present invention, a light filtering layer 14 is added between the organic support substrate 13 and the light conversion layer 12, such as... Figure 2 As shown.

[0113] The light filter layer 14 uses a color filter to completely cover the light conversion layer 12 below it. When the area below it is a blue light emitting area, it transmits blue light and absorbs other colors of light; when the area below it is a green light emitting area, it transmits green light and absorbs other colors of light; when the area below it is a red light emitting area, it transmits red light and absorbs other colors of light, thereby improving color purity.

[0114] The rest of the structure is the same as in Example 1, but this structure displays purer colors.

[0115] Example 3

[0116] Please see Figure 3-14 This application also proposes a method for manufacturing a microdisplay chip, comprising the following steps:

[0117] S1, a blue light-emitting wafer is provided, the blue light-emitting wafer comprising a sapphire substrate 1 and a self-emissive unit 2 having an epitaxial structure thereon; the epitaxial structure includes a negative polarity layer, a quantum well light-emitting layer, and a positive polarity layer; as shown in the attached figure. Figure 4 As shown;

[0118] S2, through photolithography (coating, exposure, development), etching (dry or wet etching), and resist removal (plasma or chemical resist removal), part of the epitaxial structure of the self-emissive unit 2 is etched away, exposing the sapphire substrate 1 for subsequent process positioning; as shown in the attached figure. Figure 5 As shown;

[0119] S3, through photolithography, etching, and resist removal, the positive polarity layer and quantum well light-emitting layer in the epitaxial structure of the self-emissive unit 2 are etched away, exposing the negative polarity layer, which facilitates subsequent electrode interconnect fabrication; as shown in the attached figure. Figure 6 As shown;

[0120] S4. A transparent conductive layer 3 (such as ITO) is fabricated on the positive polarity layer of the epitaxial structure of the self-emissive unit 2 through deposition (such as magnetron sputtering, electron beam evaporation), photolithography, etching, resist removal, and alloying (high-temperature annealing to form ohmic contacts) to improve the uniformity of current diffusion; as shown in the attached figure. Figure 7 As shown;

[0121] S5, through photolithography, evaporation, and resist removal, extended metal lines 4 are fabricated on the positive and negative polarity layers of the epitaxial structure of the self-emissive unit 2 to reduce electrode contact resistance; as shown in the attached figure. Figure 8 As shown;

[0122] S6. An insulating layer 5 is fabricated on the epitaxial structure by spin coating. Part of the insulating layer 5 is then etched away using photolithography, etching, and resist removal to expose the extended metal circuitry 4, thus creating a window for the insulating layer 5; as shown in the attached figure. Figure 9 As shown;

[0123] S7. Wiring lines 6 are fabricated on the insulating layer 5 using photolithography, vapor deposition, and resist removal. The wiring lines 6 are interconnected through windows in the insulating layer 5 and extended metal lines 4; as shown in the attached figure. Figure 10 As shown;

[0124] S8, an isolation barrier layer 7 is fabricated on the wiring line 6 and the isolation barrier layer 5 by spin coating. Then, part of the isolation barrier layer 7 is etched away by photolithography, etching, and resist removal to expose the wiring line 6, creating a window of the isolation barrier layer 7; as shown in the attached figure. Figure 11 As shown;

[0125] S9, bonding electrodes 8 are fabricated on the insulating barrier layer 7 by photolithography, evaporation, and resist removal. The bonding electrodes 8 are interconnected through the windows of the insulating barrier layer 7 and the wiring lines 6; as shown in the attached figure. Figure 12 As shown;

[0126] S10, the wafer obtained in the above steps is bonded to the temporary substrate 10 through the bonding layer 9 (such as UV adhesive) by hot-press bonding (temperature 100-300℃, pressure 1-10MPa), providing mechanical support; as shown in the attached figure. Figure 13 As shown;

[0127] S11, the sapphire substrate 1 of the blue light wafer is removed by laser debonding (using a laser with a wavelength of 355nm or 266nm to irradiate the interface between the sapphire substrate 1 and the epitaxial structure), exposing the bottom surface of the epitaxial structure of the self-emissive unit 2; as shown in the attached figure. Figure 14 As shown;

[0128] S12, a ring-shaped light-blocking layer 11 is fabricated on the epitaxial structure of the self-emissive unit 2 of the blue light wafer through photolithography, evaporation, and resist removal, surrounding the area of ​​the subsequent light conversion layer 12; as shown in the attached figure. Figure 15 As shown;

[0129] S13, a light conversion layer 12 (red light conversion layer or green light conversion layer) is fabricated on the epitaxial structure of the self-emissive unit 2 of the blue light wafer by spin coating (suitable for large areas) or printing (such as inkjet printing, suitable for patterning). The material is a phosphor or a mixture of quantum dots and organic adhesive; as shown in the attached figure. Figure 16 As shown;

[0130] S14, an organic support substrate 13 with a thickness of 10-200 μm is formed on the light conversion layer 12, the annular light blocking layer 11, and the epitaxial structure by spin-coating a transparent protective adhesive, which provides mechanical support after curing; see attached. Figure 17 As shown;

[0131] S15, by laser debonding (irradiating the bonding layer 9 to make it de-adhesive), the bonding layer 9 and the temporary substrate 10 are removed, completing the chip structure flipping; as shown in the attached figure. Figure 18 As shown;

[0132] S16, through laser cutting (wavelength 1064nm) or blade cutting, cuts the wafer into individual chips to complete the manufacturing process, as shown in the attached diagram. Figure 19 As shown.

[0133] Based on the above manufacturing method, a specific method for manufacturing a microdisplay chip is proposed, which manufactures the chip of Example 1 according to the following steps:

[0134] S1 provides a blue light epitaxial wafer (containing a negative polarity layer, a quantum well light-emitting layer, and a positive polarity layer) on a sapphire substrate 1;

[0135] S2, Dry etching of epitaxial structure after photolithography to expose sapphire substrate 1;

[0136] S3, after photolithography, the positive polarity layer and the quantum well light-emitting layer are etched to expose the negative polarity layer;

[0137] S4, magnetron sputtering of ITO, photolithography etching to form a transparent conductive layer 3, annealed at 300℃;

[0138] S5, Cr / Au vapor deposited, after peeling to form extended metal lines 4;

[0139] S6, spin-coated carbon black-doped PI, photolithography etching to create windows (exposing extended metal lines 4);

[0140] S7, Ti / Au vapor deposited, stripped to form wiring line 6, which is interconnected with extended metal line 4;

[0141] S8, spin-coated PI, photolithography etching to create windows (exposing wiring lines 6);

[0142] S9, Cr / Au vapor deposited, and bonded electrode 8 formed after peeling;

[0143] S10, hot-press bonded (200℃, 5MPa) to glass temporary substrate 10 (bonding layer 9 is UV adhesive);

[0144] S11, 355nm laser irradiation of sapphire substrate 1 to remove substrate;

[0145] S12, vapor-deposited carbon black, after peeling, forms an annular light-blocking layer 11;

[0146] S13, inkjet printing red / green light conversion material (BaAlSiN3:Eu and Ba2SiO4:Eu mixed with PI);

[0147] S14, spin-coating PI to form an organic support substrate 13 (thickness 80μm), curing at 250℃;

[0148] S15, Laser irradiation of UV adhesive bonding layer 9, removal of temporary substrate 10;

[0149] S16 is cut into individual chips using a 1064nm laser.

[0150] The yield of chips produced by this method is over 95%, and the cost is reduced by 40% compared to traditional Micro LEDs.

[0151] Finally, it should be noted that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A microdisplay chip structure, characterized in that, Including organic support substrates; A light conversion layer, an annular light blocking layer, and a self-emissive unit are disposed on the surface of the organic support substrate; The self-emissive unit includes an epitaxial structure, a transparent conductive layer, and extended metal lines; An insulating layer is provided on the organic support substrate, the self-emissive unit, and the annular light-blocking layer; The insulating layer has windows; Wiring lines are provided on the insulating layer; The wiring lines are interconnected with the self-illuminating unit through windows in the insulating layer; An insulating barrier layer is provided above the wiring lines and the insulating layer; The insulating barrier layer has windows; A bonding electrode is provided on the insulating barrier layer; The bonding electrodes are interconnected with the wiring lines through windows in the insulating barrier layer.

2. The microdisplay chip structure according to claim 1, characterized in that, A light filter layer is provided between the organic support substrate and the light conversion layer.

3. The microdisplay chip structure according to claim 1, characterized in that, The organic support substrate is a transparent PI, PET, epoxy resin or acrylic organic material with a thickness of 10-200μm and a transmittance of ≥90% in the 400-700nm wavelength band.

4. The microdisplay chip structure according to claim 1, characterized in that, The light conversion layer includes a green light conversion layer and a red light conversion layer. When it is a red light conversion layer, its material is MAlSiN. x The phosphor / quantum dot is composed of nitride phosphors / quantum dots of Re (1≤x≤5) or MD:Re phosphors / quantum dots, wherein M is selected from at least one of barium (Ba), strontium (Sr), and calcium (Ca), D is selected from at least one of sulfur (S), selenium (Se), and tellurium (Te), and Re is selected from at least one of europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm); when it is a green light conversion layer, the material is composed of silicate phosphors / quantum dots of M2SiO4:Re or MA2D4:Re phosphors / quantum dots, wherein M is selected from at least one of barium (Ba), strontium (Sr), and calcium (Ca), A is selected from at least one of calcium (Ca), aluminum (Al), and indium (In), D is selected from at least one of sulfur (S), selenium (Se), and tellurium (Te), and Re is selected from at least one of europium (Eu), yttrium (Y), lanthanum (La), cerium (Ce), neodymium (Nd), promethium (Pm), and samarium (Sm).

5. The microdisplay chip structure according to claim 1, characterized in that, The annular light blocking layer is a black material with high absorption and low reflectivity in the visible light range, selected from carbon black or iron oxide, which completely surrounds the light conversion layer, and the edge of the light conversion layer is located above the annular blocking layer.

6. The microdisplay chip structure according to claim 1, characterized in that, The self-emissive unit is a blue light-emitting micro-chip, comprising a negative polarity layer, a quantum well light-emitting layer, a positive polarity layer, and extended metal circuitry, and its outer dimensions do not exceed the annular light-blocking layer.

7. The microdisplay chip structure according to claim 1, characterized in that, The insulating layer is a black organic material selected from PI, epoxy resin or acrylic acid doped with carbon black, with a transmittance of ≤2.0% and a reflectance of ≤5.0%. It overlaps with the annular light blocking layer with an overlap size of 1-10μm. Its window extends from the top to the extended metal line of the self-luminous unit, and the aperture size gradually increases from the bottom to the top.

8. The microdisplay chip structure according to claim 1, characterized in that, The wiring is a metal stack material of Ti, Cr, Ni, Pt and Au, with a thickness of 0.3-2.0 μm.

9. The microdisplay chip structure according to claim 1, characterized in that, The insulating barrier layer is an organic material selected from PI, epoxy resin or silicone, with a thickness of 5-30μm. Its window extends from the top to the wiring line, and the aperture size gradually increases from the bottom to the top.

10. A method for manufacturing a microdisplay chip, characterized in that, Includes the following steps: S1, providing a blue light wafer, the blue light wafer including a sapphire substrate and a self-emissive unit containing an epitaxial structure thereon; S2, through photolithography, etching, and resist removal, partially etches away the epitaxial structure of the self-emissive unit to expose the sapphire substrate; S3, through photolithography, etching, and resist removal, the positive polarity layer and quantum well light-emitting layer in the epitaxial structure of the self-emissive unit are etched away to expose the negative polarity layer; S4. A transparent conductive layer is fabricated on the positive polarity layer of the epitaxial structure of the self-emissive unit through deposition, photolithography, etching, resist removal, and alloying. S5, through photolithography, evaporation, and resist removal, extended metal lines are fabricated on the positive and negative polarity layers of the epitaxial structure of the self-emissive unit; S6. An isolation insulating layer is fabricated on the epitaxial structure by spin coating. Part of the isolation insulating layer is etched away by photolithography, etching, and resist removal to expose the extended metal lines of the epitaxial structure of the self-emissive unit and create a window of the isolation insulating layer. S7 uses photolithography, vapor deposition, and resist removal to create wiring lines on the insulating layer. The wiring lines are interconnected through the windows of the insulating layer and the extended metal lines of the epitaxial structure of the self-emissive unit. S8, by spin coating, an isolation barrier layer is made on the wiring and the isolation barrier layer. Then, by photolithography, etching and resist removal, part of the isolation barrier layer is etched away to expose the wiring and create a window of the isolation barrier layer. S9, bonding electrodes are fabricated on the isolation barrier layer by photolithography, evaporation, and stripping to remove the resist. The bonding electrodes are interconnected through the windows of the isolation barrier layer and the wiring lines. S10, the wafer obtained in the above steps is bonded to the temporary substrate through a bonding layer by hot-press bonding. S11 removes the sapphire substrate from the blue light wafer by laser debonding. S12, through photolithography, evaporation, and stripping to remove resist, a ring-shaped light blocking layer is fabricated on the epitaxial structure of the self-emissive unit of the blue light wafer. S13, a light conversion layer is fabricated on the epitaxial structure of the self-emissive unit of the blue light wafer by spin coating or printing. S14, a transparent protective adhesive is coated on the light conversion layer, the annular light blocking layer and the epitaxial structure by spin coating, serving as an organic support substrate; S15 removes the bonding layer and temporary substrate by laser debonding; S16, cut to form a single chip.

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