Topological dark state-based optical device and optical element therefor

Abstract

The invention relates to the field of nano photonics, and relates to an optical device. The optical device comprises a light source having a wavelength in the spectrum of [lambda] 1s, where the light source is implemented as an image projector, and an optical element which is a plane in the (x, y) plane, the normal of which forms an angle of [theta] 1s to the optical axis of the light source. The optical element comprises at least a first optically transparent dielectric layer having a thickness d1 and a dielectric permeability [epsilon] 1, a second absorptive two-dimensional material layer having a thickness d2 < = 100 nm and a dielectric permeability [epsilon] 2, and an optically transparent substrate having a dielectric permeability [epsilon] 3. The layers and the substrate are configured to form topological dark state points. The technical result consists in providing the possibility of producing planar optics for ultra-thin structures with high image quality.

Description

Technical Field

[0001] This invention relates to the field of nanophotonics, and more particularly to projection optical devices based on planar diffractive optical elements, which can be used to create virtual images of objects in a field of view when forming virtual, augmented or extended reality (VR / AR / XR), and can also be used to form other optical elements, such as optical differentiators, lenses, optical objectives, etc. Background Technology

[0002] Prior art discloses an optical device for forming augmented reality (AR), comprising optical elements in the form of a transparent holographic screen (e.g., a vehicle windshield) and a projection device that focuses an image from a transmitter onto a 3-D hologram (see publications US2015362734A1, cl. G02B27 / 01, G02B5 / 32, G02C7 / 04, G03H1 / 02, G03H1 / 04, G03H1 / 18, published December 17, 2015). Disadvantages of this prior art design include manufacturing complexity, relatively low diffraction efficiency of the holographic display, inability to manufacture flexible devices, and a large thickness of the holographic screen.

[0003] Prior art discloses a semi-transparent optical element comprising a first optically transparent layer having a nanostructured glass surface (a portion of the nanoplane forms an angle of 10-90° with the plane of the layer) and a second discontinuous metal layer with a thickness of 1 to 50 nm (which at least covers a portion of the nanoplane) (see publications AU2014292323A1, cl. B82Y20 / 00, B82Y30 / 00, G02B5 / 18, G02B5 / 20 published January 7, 2016). In the prior art optical element, the second layer is produced by partially metallizing the nanostructured surface through vapor deposition, sputtering, printing, casting, or stamping, while using shadow mask or photoresist techniques to prevent the surface from being completely covered by metal. Such elements can be used to modify sunlight transmission (e.g., through a window) while maintaining their transparency. The disadvantages of the prior art are the complexity of the process for generating metal nanoplanes at an angle to the substrate (only metal structures at a 90° angle are relatively easy to generate), and the insufficient periodicity of such nanostructures (roughness of 5-10 nm for a deposited metal layer thickness of 1-75 nm). Furthermore, such optical elements affect the transmission spectrum across all wavelengths, and the resulting structure cannot be transferred to another surface.

[0004] In terms of technical substance, the closest invention to this claim is a planar optical device based on two-dimensional planar materials (e.g., atomically thin transition metal dichalcogenide compounds), which makes it possible to realize topological dark state effects (see Georgy Ermolaev, Kirill Voronin, Denis G. Baranov, Vasyl Kravets, Gleb Tselikov, Yury Stebunov, Dmitry Yakubovsky, Sergey Novikov, Andrey Vyshnevyy, Arslan Mazitov, Ivan Kruglov, Sergey Zhukov, Roman Romanov, Andrey M. Markeev, Aleksey Arsenin, Kostya S. Novoselov, Alexander N. Grigorenko and Valentyn Volkov, Topological phasesingularities in atomically thin high-refractive-index materials / NATURECOMMUNICATIONS | (2022) 13:2049 | (https: / / doi.org / 10.1038 / s41467-022-29716-4). Such thin optical elements can serve as a basis for developing ultra-compact tunable optical devices compatible with complementary metal-oxide-semiconductor (CMOS) structures. In this context, the topological approach (using a null space protected by a topology with a simple heterostructure) opens up new possibilities for the efficient application of atomically thin materials with high refractive indices and non-zero optical losses as phase materials in photonics. The main drawbacks of the prior art are the opacity of the substrate (silicon oxide on silicon) used, its rigidity, and the necessity of operating within the null space in the dissipation channel, which limits its application and prevents it from being used for the image bending required for AR / VR / XR applications. Furthermore, the structures of the prior art cannot be used in conjunction with projection systems, nor can they be transferred to arbitrary surfaces.

[0005] The technical problem is to eliminate the above-mentioned drawbacks and generate a technical solution based on the topological dark state effect that can be used for virtual image projection and processing. Summary of the Invention

[0006] The technological advantage lies in expanding the functionality of planar optical devices used in ultra-thin structures.

[0007] The setup issues related to the optical device have been resolved, and the technical effect has been achieved because the optical device contains wavelengths of λ in the spectrum. 1s A light source implemented as an image projector, and a plane in the (x,y) plane whose normal is at an angle θ to the optical axis of the light source. 1s An optical element comprising at least a first optically transparent dielectric layer with a thickness of d1 and a dielectric conductivity of ε1, a second absorbing two-dimensional material layer with a thickness of d2 < 100 nm and a dielectric conductivity of ε2, and an optically transparent substrate with a dielectric conductivity of ε3, wherein the layers and the substrate are configured to form a topological dark state point A(λ0, θ0), wherein the complex scattering amplitude of incident light with wavelength λ and angle θ on the optical element is within the closed-circuit boundary. L The absolute value of the phase φ integral over the given area is: [Mathematical Expression 1] in L Centered on point A(λ0, θ0), with semi-axis λ L =10 nm and θ L An ellipse with a radius of 5° ds It is the differential in space λ, θ, and the λ of the light source 1s and θ 1s Located within the closed enclosure line L The thickness of the first and / or second layer is spatially modulated: d2 = d2(x,y). The second layer is preferably made of gold, copper, silver, or aluminum, and its thickness does not exceed 30 nm. Furthermore, the second layer can be made of ZnO, TiO2, ZnS, MgO, BeO, PbF2, CsI, HfO2, Sc2O3, SiN, GaP, CsPbBr3, CsPbCl3, CsPbI3, GaN, YVO4, MgAlO, YAlO, LuAlO, AlSb, GaSb, InSb, AlAs, GaAs, InAs, BC, SiC, TiC, VC, CsCl, CuCl, BaF, CeF3, LaF3, LiF , SrF2, LiI, KI, RbI, CaMoO4, SrMoO4, PbMoO4, LiNbO3, KNbO3, VN, ZrO2, GeO2, TeO2, WO3, Fe2O3, Y2O3, Lu2O3, Nb2O5, Ta2O5, Fe3O4, InP, CdSe, PbSe, ZnSe, AgGaS2, CdGa2S4, CdS, CuGaS2, CdTe, Te, ZnTe, BaTiO3, Bi4Ti3O 12PbTiO3, SrTiO3, diamond, graphite, graphene, graphene oxide, MoS2, WS2, MoSe2, WSe2, Cd3As2, Cd3Sb2, Cr2AlC, Cr2C, Mn2AlC, Mo2C, Mo2Ga2C, Mo3AlC2, Nb2AlC, Nb2C, Nb4AlC3, Nb4C3, Ta2C, Ta4AlC3, Ti2AlC, Ti2Al N, Ti2C, Ti2N, Ti3AlC2, Ti3C2, Ti3CN, Ti3SiC2, Ti4N3, V2AlC, V2C, V4AlC3, V4C3, SnS2, SnSe2, ReS2, ReSe2, hBN, GaSe, Sb2Te3, PdS2, PdSe2, PtS2, PtSe2, GaS, GaTe, Ca(OH)2, K(FeMg)3Si3AlO 10 (OH)2, Mg(OH)2, MnO2, MoO3, Sb2O3, Sb2OS2, Sb2Se3, Sb2S3, As2S3, As2Te3, Bi2O2Se, Bi2Se3, Bi2TeO2, BiSbTe3, Bi2S 3. Bi2Te3, AsP, CdI2, CdPS3, CuS, CoPS3, Cr2Ge2Te6, Cr2S3, CrBr3, CrCl3, CrGeTe3, CrPS4, CrSeBr, CuCrP2S6, CuIn7Se 11 , FeCl2, FePS3, FePSe3, MoTe2, GaGeTe, GaInS3, GaSeTe, GaSSe, GaPS4, GaSTe, GeAs, GeSe, GeS, GeS2, GeTe, HfSe2, HfS2, HfTe2, In2S3, In2Se3, InSe, InTe, InGaSe2, InSeBr, InSnSe, MnPS3, MnPSe3, MoSSe, MoWSe2, MoWS2, MoWTe2, MoNbSe2, MoO 2.5 Cl 0.5, MoReS2, MoTaSe2, MoVSe2, Na2Co2TeO6, Nb2SiTe4, NbReS2, NbReSe2, NbS3, Ni2SiTe4, Ni3TeO6, NiCl2, NiI2, NiPS3, PbI2, PbTe, PtTe2, ReMoS2, ReNbS2, ReN bSe2, ReSSe, SbAsS3, SbSe, SbSI, SiP, SnPSe3, SnS, Ta2NiS5, TaS2, TaS3, TaSe2, TaWSe2, TlSe, TiBr3, SnTe2, TiS3, TlGaS2, TlGaSe2, TlGaTe2, TlInS2, WTe2, WSSe, WNbSe2, WReSe2, ZrS2, ZnIn2S4, ZnPS3, ZnPSe3, ZrGeTe4, ZrS3, ZrSe2, ZrSe3, ZrTe2, ZrTe3, Cr2Si2Te6, Cr2Te3, CrI3, CrSBr, CrTe2, Fe3GeTe2, Fe4Ge Te2, TaCo2Te2, VS2, VSe2, VTe2, BiSbTeSe, BiTe, CuFeTe, HfTe5, FeSe, FeTeSe, FeTe, NbS2, NbSe2, NbTe2, NbTe4, NiTe2, PdBi2, PdTe2, SnTaS2, TaTe2, TiTe2, Tl2Ba2CaCu2O8, ZrSiS, CdAs2, CuSi2P3, NbAs2, PbTaSe2, Ta2NiSe5, Ta2NiTe5, Ta2Se8I, TaNi2Te3, TiS2, TiSe2, WNbTe2, ZnAs2, ZrTe5, LaTe2, NbSe3, Bi2SeTe2, Bi2Te2S, BiInTe3, Bi2Se 1.5 Te 1.5 Bi4Te 1.5 S 1.5 The light source is made of GeBi₂Te₄, PbBi₂Te₄, SnBi₄Te₇, SnSb₂Te₄, NiTe, SbTe, SiTe₂, BiTeI, InSSe, PbSnS₂, TlGaS₃, C₃N₄, Cu₂Te, GeSeTe, MnTe, As₂Se₃, CrPS₃, SnSe, WReS₂, TiBr, BaTiS₃, Al₂O₃, BiFeO₃, Ag₃AsS₃, HgS, bismuth, strontium, calcium, copper oxide, black arsenic, or black phosphorus. The light source is preferably linearly polarized and monochromatic, with a center wavelength of λ. 1s The phase φ can be the phase of the complex scattering amplitude of the light in the reflection channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization [Mathematical Expression 2] , in r 0123 It is the reflectivity of optical elements. [Mathematical Expression 3] –For s-polarization, [Mathematical Expression 4] , –For p-polarization, [Mathematical Expression 5] , [Mathematical Expression 6] [Mathematical Expression 7] i , j It is the layer index number, ε i It is the first i The dielectric conductivity of the layer, d i It is the first i The thickness of the layer, ε0, is the permittivity of the medium from which the light originates. Alternatively, the phase φ is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization [Mathematical Expression 8] , Where t 0123 It refers to the transmittance of optical components. [Mathematical Expression 9] –For s-polarization, [Mathematical Expression 10] , –For p-polarization, [Mathematical Expression 11] , [Mathematical Expression 6] [Mathematical Expression 7] i , jIt is the layer index number, ε i It is the first i The dielectric conductivity of the layer, d i εi is the thickness of the i-th layer, and ε0 is the permittivity of the medium from which the light originates.

[0008] The setup problems associated with the optical device have been solved, and the technical effect has been achieved because the optical device comprises at least a first optically transparent dielectric layer with a thickness of d1 and a dielectric conductivity of ε1 and a second absorbing material layer with a thickness of d2 and a dielectric conductivity of ε2 arranged sequentially, and additionally provides an adhesive layer deposited on the free surface of the first or second layer, wherein the layer is configured to form topological dark states by making the first layer a polymer film with a thickness of d1 = 0.01-100 µm and ε1 = 1.7-4.0, and the second layer made of a metal with a thickness of d2 ≤ 30 nm and |ε2| = 1-10. The second layer is preferably made of gold, copper, silver, or aluminum, and its thickness is spatially modulated, for example, manufactured in the form of a diffraction grating. Attached Figure Description

[0009] Figure 1 [ Figure 1 [This is a general schematic diagram of the disclosed optical device;] Figure 2 [ Figure 2 ] is an example of the phase distribution around a topological dark state point A(λ0,θ0) in the parameter space of wavelength λ and incident angle θ; Figure 3 [ Figure 3 [ ] is a diagram used to determine the phase distribution on the plane (x,y) of an optical element using an elliptic polarimeter. Detailed Implementation

[0010] The disclosed optical device represents a light source 1 and an optical element 2 that is planar in the (x,y) plane, which are rigidly fixed relative to each other.

[0011] For example, light source 1 can be a broadband multicolor image projector based on an RGB LED matrix or a light source with a center wavelength of λ. ls The image is represented by a linearly polarized and monochromatic laser image projector. Light source 1 is mounted such that its optical axis forms an angle θ with the normal n of optical element 2. ls horn.

[0012] Optical element 2 itself is fabricated as a heterogeneous structure, which includes at least a first optically transparent dielectric layer 3 along axis z (in [ Figure 1 In: thickness d1, dielectric conductivity ε1), second absorbent two-dimensional material layer 4 (in [ Figure 1 In the [section]: thickness d2 < 100 nm, dielectric conductivity ε2) and optically transparent substrate 5 (dielectric conductivity ε3). The thickness of the absorbing two-dimensional material layer 4 is capped at 100 nm to ensure that its transparency condition is met. For some applications, the heterostructure may contain a greater number of layers arranged in various orders: the outer layer may be represented by both the dielectric layer 3 and the absorbing layer 4 (i.e., the terms "first" and "second" used herein do not define the order of layer arrangement).

[0013] Prepare the layer of the heterostructure (for the selected substrate 5 material) to form a λ that approximates the light source 1 used. ls and θ ls The topological dark state point A(λ0, θ0) is obtained. This means that due to the topological structure (layer composition and thickness), optical element 2 has zero amplitude in one of the dissipation channels, such as in the reflection or transmission channel (reflection and transmission as specific cases of dissipation are described in, for example, the publication "Temporalcoupled-mode theory for the Fano resonance in optical resonators," Shanhui Fan, Wonjoo Suh, and JD Joannopoulos, Journal of the Optical Society of America, Vol. 20, Issue 3, pp. 569-572, 2003, DOI: 10.1364 / JOSAA.20.000569). This results in a significant increase in diffraction efficiency in the other channel (up to 10%), making it possible to produce a sufficiently bright virtual image using optical element 2 that is completely transparent in the range of 300 nm to 2 µm.

[0014] The topological dark state point of optical element 2 will be point A(λ0, θ0) that satisfies the following condition: for this point, the complex scattering amplitude of incident light with wavelength λ and angle θ on the optical element is within the closed bounding line. L The absolute value of the phase φ integral over the given area is: [Mathematical Expression 1] in L Centered on point A(λ0, θ0), with semi-axis λ L =10 nm and θ L An ellipse with a radius of 5° ds It is the differential in space λ, θ. And the λ of the light source 1sand θ 1s Located within the closed enclosure line L Inside.

[0015] The ellipse L defines the operating range of the wavelength and angle for efficient operation of the disclosed optical device. The value of the semi-axis of the ellipse L was chosen based on simulation and experimental results: λ L and θ L A larger value of λ (a looser matching condition) results in a weaker topological dark state effect and a significant decrease in the intensity of light entering the desired dissipation channel (e.g., when light from the projector to the user's eye is bent), while λ... L and λ L The lower the value (the stricter the matching condition), the more the working time of adjusting the device (positioning the light source 1 relative to the optical element 2) increases significantly.

[0016] In other words, the topological dark state point A of optical element 2 will be represented by the values ​​of wavelength λ0 and incident angle θ0. Near these values, the phase φ of the scattered light changes very rapidly, that is, the phase difference between relative points of ellipse L is not less than π / 2.

[0017] The phase φ distribution of optical element 2 can be determined using the elliptic polarization method. Figure 3 The phase φ of the polarized light reflected from the sample is determined in the reflection / transmission / dissipation mode. For multiple wavelengths λ and incident angles θ around point A in the singularity study of sample source 7, the method allows direct measurement of the phase φ of the polarized light reflected from the sample using detector 6. If in space (λ, θ) with point A as the center and principal half-axis λ... L =10 nm and θ L If an ellipse with a gradient of φ = 5° contains an ellipse whose absolute value of the phase gradient integral is greater than π, then that point can be considered a phase singularity, i.e., a topological dark state point. Therefore, to generate an optical device based on the optical element 2, a corresponding light source 1, i.e., λ, is required. 1s and θ 1s Located within the closed enclosure line L An image projector inside.

[0018] The parameters of optical element 2 can be calculated based on the following considerations.

[0019] If the phase φ is the phase of the complex scattering amplitude of the light in the reflection channel, then in order to achieve the topological dark state effect, optical element 2 must meet the following conditions: –For s-polarization or p-polarization [Mathematical Expression 2] , in r 0123 It is the reflectance factor of optical element 2, and the other formula components are defined as follows: [Mathematical Expression 3] [Mathematical Expression 4] , According to [Mathematical Formula 4], r ij It is the reflection factor at the interface between materials i and j (for s-polarization). [Mathematical Expression 5] , According to [Mathematical Formula 5], r ij It is the reflection factor at the interface between materials i and j (for p-polarization). [Mathematical Expression 6] [Mathematical Expression 7] i , j It is the layer index number (in the direction from the outside to the inside, towards the substrate of optical element 2). ε i It is the first i The dielectric conductivity of the layer, d i It is the thickness of the i-th layer. ε0 is the permittivity of the medium from which the light originates.

[0020] However, if the phase φ is the phase of the complex scattering amplitude of the light in the transmission channel, then in order to achieve the topological dark state effect, optical element 2 must meet the following conditions: –For s-polarization or p-polarization [Mathematical Expression 8] , in t 0123 It is the overall transmittance of optical element 2. [Mathematical Expression 9] [Mathematical Expression 10] , According to [Mathematical Formula 10], r ij It is the reflection factor at the interface between materials i and j (for s-polarization). [Mathematical Expression 11] , According to [Mathematical Formula 11], r ij Yes, the reflection factor of the interface between materials i and j (for p-polarization). [Mathematical Expression 6] [Mathematical Expression 7] i , j It is the layer index number (in the direction from the outside to the inside, towards the substrate of optical element 2). ε i It is the first i The dielectric conductivity of the layer, d i It is the thickness of the i-th layer. ε0 is the permittivity of the medium from which the light originates.

[0021] In practice, to achieve transparency, materials such as metals (gold, copper, silver, or aluminum) or other high-refractive-index materials (ZnO, TiO2, ZnS, MgO, BeO, PbF2, CsI, HfO2, Sc2O3, SiN, GaP, CsPbBr3, CsPbCl3, CsPbI3, GaN, YVO4, MgAlO, YAlO, LuAlO, AlSb, GaSb, InSb, AlAs, GaAs, InAs, BC, SiC, TiC, VC, CsCl, CuCl, BaF) are used. , CeF3, LaF3, LiF, SrF2, LiI, KI, RbI, CaMoO4, SrMoO4, PbMoO4, LiNbO3, KNbO3, VN, ZrO2, GeO2, TeO2, WO3, Fe2O3, Y2O3 , Lu2O3, Nb2O5, Ta2O5, Fe3O4, InP, CdSe, PbSe, ZnSe, AgGaS2, CdGa2S4, CdS, CuGaS2, CdTe, Te, ZnTe, BaTiO3, Bi4Ti3O 12PbTiO3, SrTiO3, diamond, graphite, graphene, graphene oxide, MoS2, WS2, MoSe2, WSe2, Cd3As2, Cd3Sb2, Cr2AlC, Cr2C, Mn2AlC, Mo2C, Mo2Ga2C, Mo3AlC2, Nb2AlC, Nb2C, Nb4AlC3, Nb4C3, Ta2C, Ta4AlC3, Ti2AlC, Ti2Al N, Ti2C, Ti2N, Ti3AlC2, Ti3C2, Ti3CN, Ti3SiC2, Ti4N3, V2AlC, V2C, V4AlC3, V4C3, SnS2, SnSe2, ReS2, ReSe2, hBN, GaSe, Sb2Te3, PdS2, PdSe2, PtS2, PtSe2, GaS, GaTe, Ca(OH)2, K(FeMg)3Si3AlO 10 (OH)2, Mg(OH)2, MnO2, MoO3, Sb2O3, Sb2OS2, Sb2Se3, Sb2S3, As2S3, As2Te3, Bi2O2Se, Bi2Se3, Bi2TeO2, BiSbTe3, Bi2S 3. Bi2Te3, AsP, CdI2, CdPS3, CuS, CoPS3, Cr2Ge2Te6, Cr2S3, CrBr3, CrCl3, CrGeTe3, CrPS4, CrSeBr, CuCrP2S6, CuIn7Se 11 , FeCl2, FePS3, FePSe3, MoTe2, GaGeTe, GaInS3, GaSeTe, GaSSe, GaPS4, GaSTe, GeAs, GeSe, GeS, GeS2, GeTe, HfSe2, HfS2, HfTe2, In2S3, In2Se3, InSe, InTe, InGaSe2, InSeBr, InSnSe, MnPS3, MnPSe3, MoSSe, MoWSe2, MoWS2, MoWTe2, MoNbSe2, MoO 2.5 Cl 0.5, MoReS2, MoTaSe2, MoVSe2, Na2Co2TeO6, Nb2SiTe4, NbReS2, NbReSe2, NbS3, Ni2SiTe4, Ni3TeO6, NiCl2, NiI2, NiPS3, PbI2, PbTe, PtTe2, ReMoS2, ReNbS2, ReN bSe2, ReSSe, SbAsS3, SbSe, SbSI, SiP, SnPSe3, SnS, Ta2NiS5, TaS2, TaS3, TaSe2, TaWSe2, TlSe, TiBr3, SnTe2, TiS3, TlGaS2, TlGaSe2, TlGaTe2, TlInS2, WTe2, WSSe, WNbSe2, WReSe2, ZrS2, ZnIn2S4, ZnPS3, ZnPSe3, ZrGeTe4, ZrS3, ZrSe2, ZrSe3, ZrTe2, ZrTe3, Cr2Si2Te6, Cr2Te3, CrI3, CrSBr, CrTe2, Fe3GeTe2, Fe4Ge Te2, TaCo2Te2, VS2, VSe2, VTe2, BiSbTeSe, BiTe, CuFeTe, HfTe5, FeSe, FeTeSe, FeTe, NbS2, NbSe2, NbTe2, NbTe4, NiTe2, PdBi2, PdTe2, SnTaS2, TaTe2, TiTe2, Tl2Ba2CaCu2O8, ZrSiS, CdAs2, CuSi2P3, NbAs2, PbTaSe2, Ta2NiSe5, Ta2NiTe5, Ta2Se8I, TaNi2Te3, TiS2, TiSe2, WNbTe2, ZnAs2, ZrTe5, LaTe2, NbSe3, Bi2SeTe2, Bi2Te2S, BiInTe3, Bi2Se 1.5 Te 1.5 Bi4Te 1.5 S 1.5 It is reasonable to manufacture an absorber layer 4 with a thickness not exceeding 30 nm using materials such as GeBi2Te4, PbBi2Te4, SnBi4Te7, SnSb2Te4, NiTe, SbTe, SiTe2, BiTeI, InSSe, PbSnS2, TlGaS3, C3N4, Cu2Te, GeSeTe, MnTe, As2Se3, CrPS3, SnSe, WReS2, TiBr, BaTiS3, Al2O3, BiFeO3, Ag3AsS3, HgS, bismuth strontium calcium copper oxide, black arsenic or black phosphorus.

[0022] In this case, dielectric layer 3 can be prepared using any available polymer, such as polyvinyl alcohol, hydroxyethyl methacrylate, polydimethylsiloxane, polylactic acid, polymethyl methacrylate, polymethylpentene, polycarbonate, polyetherimide, etc.

[0023] To facilitate the manufacturing of the screen for the projection optics, the optical element 2 can be manufactured and supplied as a thin, flexible film without the substrate 5. Then, for usability, it is provided with an adhesive layer 6, allowing it to be bonded to any existing transparent substrate (glass, vehicle windshields, windows, etc.). In this case, the optimal solution is to produce the first layer 3 as a polymer film with a thickness d1 = 0.01-100 µm and ε1 = 1.7-4.0, and the second layer 4 from a metal with a thickness d2 ≤ 30 nm and |ε2| = 1-10. Now, in the preferred embodiment, the order of the layers plays a crucial role. These parameters ensure that the aforementioned topological dark-state conditions are satisfied for almost all known transparent surfaces (made of glass, plastic, etc.).

[0024] To further improve diffraction efficiency, the thickness of the dielectric layer 3 and / or the absorption layer 4 (preferably) can be spatially modulated: d2=d2(x,y), that is, it can in fact represent a diffraction grating.

[0025] Due to the described features, the disclosed optical devices and corresponding optical elements can be used as the basis for forming a new generation of ultrathin virtual, augmented, or extended reality (VR / AR / XR) devices. By changing the parameters of the disclosed optical elements within given limits, it is possible to produce, for example, optical differentiators (i.e., structures that reflect only the boundaries of image elements), lenses or optical objectives (e.g., by forming Fresnel zone plates with two-dimensional material thicknesses above and below topological points), and many other optical elements.

[0026] Example Example 1. The optical device includes a wavelength-λ-based... 1s An image projector using a 655 nm laser, the laser being at an angle θ to the normal of an optical element taking the form of a transparent screen. 1s Mounted at a 75° angle, the optical element has a structure that provides a topological dark state around a point (655 nm, 75°), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 100 nm and a gold modulation layer with a thickness of 13 nm on BK7 optical glass.

[0027] The optical element structure is obtained in the following manufacturing cycle. A 13 nm gold layer is deposited on BK7 optical glass using electron beam deposition. Then, a 100 nm polymethyl methacrylate layer is deposited from above using spin coating. This structure acts as an optical differentiator, where the ratio of the reflection intensity at the image element boundary to the intensity of the image itself is approximately 100. It should be noted that the optical differentiator will only be used to polarize the perpendicularly incident plane of light, i.e., the disclosed optical element exhibits polarization selectivity. The projector will form a clearly visible image of the boundaries of the image elements projected by the projector on a screen of the optical element.

[0028] Example 2. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of an optical element having the structure described in Embodiment 1 and taking the form of a transparent screen. 1s Install at a 75° angle.

[0029] This structure acts as an optical differentiator, reflecting image boundaries with a center wavelength of 655 nm and a half-width of 10 nm (i.e., the structure also acts as a filter for the 650-660 nm wavelength range), where the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector will form a clearly visible image of the boundaries of the image elements on the screen.

[0030] Example 3. The optical device includes an image projector based on a 655 nm wavelength laser, the laser being polarized perpendicular to the plane of incidence so as to form an angle θ with the normal of an optical element having the structure described in Embodiment 1 and taking the form of a transparent screen. 1s Install at a 75° angle.

[0031] This structure acts as an optical differentiator, meaning it reflects image boundaries where the ratio of the intensity of the reflected image element boundaries to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector forms a clearly visible image of the boundaries of the image elements on the screen, where, unlike embodiments 1 and 2, this image will not have any additional wavelengths or polarization.

[0032] Example 4. The optical device includes a wavelength-λ-based... 1s An image projector using a 655 nm laser (the light must be polarized perpendicular to the plane of incidence for optimal visibility), the laser being at an angle θ to the normal of an optical element taking the form of a transparent screen. 1sMounted at a 75° angle, the optical element has a structure that provides a topological dark state around a point (655 nm, 75°), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 100 nm and a gold modulation layer with a thickness of 13 nm on BK7 optical glass.

[0033] The optical element structure is obtained in the following manufacturing cycle. A 13 nm gold layer is deposited on BK7 optical glass using electron beam deposition. The gold layer is patterned into a diffraction grating with a period of 648 nm using electron beam lithography. Then, a 100 nm polymethyl methacrylate layer is deposited from above using a spin-coating method.

[0034] The obtained structure has a diffraction efficiency exceeding 4.5% and a transparency exceeding 70%. In this case, the projector forms a clearly visible image on the screen with an intensity of approximately 4.5% of the projector's light intensity (the intensity entering the desired diffraction channel is determined by the diffraction efficiency).

[0035] Example 5. The optical device includes a wavelength-λ-based... 1s An image projector using a 655 nm laser (the light must be polarized perpendicular to the plane of incidence for optimal visibility), the laser being at an angle θ to the normal of an optical element taking the form of a transparent screen. 1s Mounted at a 75° angle, the optical element has a structure that provides a topological dark state around a point (655 nm, 75°), and the structure represents a modulated polymer layer of polymethyl methacrylate with a thickness of 100 nm and a uniform gold layer with a thickness of 13 nm on BK7 optical glass.

[0036] The optical element structure was obtained in the following manufacturing cycle. A 13 nm gold layer was deposited on BK7 optical glass using electron beam deposition. Then, a 100 nm polymethyl methacrylate layer was deposited from above using spin coating. The polymethyl methacrylate layer was patterned into a diffraction grating with a period of 648 nm using electron beam lithography.

[0037] The obtained structure has a diffraction efficiency exceeding 4.3% and a transparency exceeding 70%. In this case, the projector forms a clearly visible image on the screen with an intensity approximately 4.3% of the projector's light intensity.

[0038] Example 6. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of the optical element which takes the form of a transparent screen. 1sMounted at an angle of 74°, the optical element has a structure that provides a topological dark state around a point (547 nm, 74°), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 92 nm and a uniform aluminum layer with a thickness of 4 nm on BK7 optical glass.

[0039] The optical element structure was obtained in the following manufacturing cycle. A 4 nm aluminum layer was deposited on BK7 optical glass using electron beam deposition. Then, a 92 nm polymethyl methacrylate layer was deposited from above using a spin-coating method.

[0040] This structure acts as an optical differentiator, reflecting image boundaries with a center wavelength of 547 nm and a half-width of 10 nm (i.e., the structure also acts as a filter for the 542-552 nm wavelength range), where the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector will form a clearly visible image of the boundaries of the image elements on the screen.

[0041] Example 7. Same as in Example 6, but using a projector based on a laser with a center wavelength of λ=530 nm that is polarized perpendicular to the plane of light incidence.

[0042] This structure acts as an optical differentiator, meaning it reflects image boundaries where the ratio of the intensity of the reflected image element boundaries to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector forms a clearly visible image of the boundaries of the image elements on the screen, where, unlike in Embodiment 6, this image will not have any additional wavelengths or polarization.

[0043] Example 8. Same as in Example 7, but using electron beam lithography to pattern the aluminum layer into a diffraction grating with a period of 1274 nm.

[0044] The obtained structure has a diffraction efficiency exceeding 3.8% and a transparency exceeding 70%. In this case, the projector forms a clearly visible image on the screen with an intensity approximately 3.8% of the projector's light intensity.

[0045] Example 9. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of the optical element which takes the form of a transparent screen. 1sMounted at an angle of 76°, the optical element has a structure that provides a topological dark state around a point (615 nm, 76°), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 95 nm, a uniform gold layer with a thickness of 15 nm, and a uniform polymer layer of polydimethylsiloxane with a thickness of 30 nm on BK7 optical glass.

[0046] The optical element structure is obtained in the following manufacturing cycle. A 30 nm polydimethylsiloxane layer is coated on the optical glass using a spin-coating method, followed by a 15 nm gold layer being coated on the same layer using electron beam deposition, and then a 100 nm polymethyl methacrylate layer is deposited using a spin-coating method.

[0047] This structure acts as an optical differentiator, reflecting image boundaries with a center wavelength of 615 nm and a half-width of 10 nm (i.e., the structure also acts as a filter for the 610-620 nm wavelength range), where the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector will form a clearly visible image of the boundaries of the image elements on the screen.

[0048] Example 10. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of the optical element which takes the form of a transparent screen. 1s Mounted at an angle of 51°, the optical element has a structure that provides topological dark states around points (420 nm, 51°), (459 nm, 42°), and (525 nm, 56°), and the structure represents a uniform polymer layer of polymethyl methacrylate with a thickness of 67 nm, a uniform gold layer with a thickness of 14 nm, and a uniform polymer layer of polydimethylsiloxane with a thickness of 50 nm on BK7 optical glass.

[0049] The optical element structure is obtained in the following manufacturing cycle. A 50 nm polydimethylsiloxane layer is coated on the optical glass using a spin-coating method, followed by a 14 nm gold layer being coated on the same layer using electron beam deposition, and then a 67 nm polymethyl methacrylate layer is deposited using a spin-coating method.

[0050] This structure acts as an optical differentiator, reflecting image boundaries with a center wavelength of 420 nm and a half-width of 10 nm (i.e., the structure also acts as a filter for the 415-425 nm wavelength range), where the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector will form a clearly visible image of the boundaries of image elements formed by the projector on the screen. This embodiment differs from other embodiments in that the range of the projector's operating wavelength and angle is increased due to the three topological points.

[0051] Example 11. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of the optical element which takes the form of a transparent screen. 1s Mounted at an angle of 60°, the optical element has a structure that provides a topological dark state around a point (450 nm, 59°), and the structure represents a uniform gold layer with a thickness of 3 nm and a polymer layer of polymethyl methacrylate with a thickness of 300 nm on sapphire.

[0052] The optical element structure was obtained in the following manufacturing cycle. A 300 nm polymethyl methacrylate layer was deposited on a sapphire substrate using a spin-coating method. A 3 nm gold layer was then deposited on this layer using electron beam deposition.

[0053] This structure acts as an optical differentiator, reflecting image boundaries with a center wavelength of 450 nm and a half-width of 10 nm (i.e., the structure also acts as a filter for the 445-455 nm wavelength range), where the ratio of the intensity of the image element boundary reflection to the intensity of the image itself is approximately 100 at these wavelengths. In other words, the projector will form a clearly visible image of the boundaries of the image elements on the screen.

[0054] Example 12. The optical device includes an image projector based on an RGB LED matrix, wherein the projector is at an angle θ to the normal of the optical element taking the form of a hydrogel contact lens. 1s Mounted at an angle of 70°, the optical element has a structure that provides a topological dark state around a point (650 nm, 70°), and the structure is generated by forming a 640 nm periodic diffraction grating from a polymer layer of polymethyl methacrylate with a thickness of 95 nm and a uniform gold layer with a thickness of 15 nm on the outer surface of the lens.

[0055] The obtained structure has a diffraction efficiency exceeding 4.7% and a transparency exceeding 70% (for wavelengths of 645-655 nm). In this case, the projector forms a clearly visible image on the screen with an intensity approximately 4.7% of the projector's light intensity.

[0056] Example 13. The optical element is fabricated as a polymethyl methacrylate polymer film with a dielectric conductivity of 2.25 and a thickness of 80 nm. An 18 nm thick gold film with a dielectric conductivity of 2.25 is coated onto the polymer film using electron beam deposition. A graphene-based adhesive layer is deposited on the gold side using a liquid transfer method. The resulting structure exhibits a diffraction efficiency exceeding 2% and a transparency exceeding 80%.

[0057] Such optical elements can be mounted on any solid surface and can act as optical differentiators (the operating range of wavelength and angle will vary slightly depending on the surface on which they are deposited), where the ratio of image boundary reflection intensity to image intensity is approximately 100. That is, the projector will form a clearly visible image on the screen of the boundaries of the image elements formed by the projector.

[0058] Example 14. The optical element is fabricated as a polymethyl methacrylate polymer film with a dielectric conductivity of 2.25 and a thickness of 80 nm. An 18 nm thick gold film with a dielectric conductivity of 2.25 is deposited on the polymer film using electron beam deposition. The film is then patterned into a diffraction grating with a period of 648 nm using electron beam lithography. A binder layer in the form of graphene is deposited on the gold side using a liquid transfer method. The resulting structure exhibits a diffraction efficiency exceeding 3.8% and a transparency exceeding 70%. Such optical elements can be mounted on any robust surface and provide a 65° bend of 630 nm wavelength light from a light source configured at a 65° angle (for the case where the structure is deposited on BK7 optical glass; for other surfaces, the values ​​of the operating wavelength and angle will vary, but not significantly, within ±20 nm and ±10°). Claims (as amended under Article 19 of the Treaty) 1. An optical device comprising a spectrum with wavelength λ 1s A light source implemented as an image projector, and a plane in the (x,y) plane whose normal is at an angle θ to the optical axis of the light source. 1sAn optical element comprising at least a first optically transparent dielectric layer with a thickness of d1 and a dielectric conductivity of ε1; a second absorbing two-dimensional material layer with a thickness of d2 < 100 nm and a dielectric conductivity of ε2; and an optically transparent substrate with a dielectric conductivity of ε3, wherein the layers and the substrate are configured to form a topological dark state point A(λ0, θ0), wherein the complex scattering amplitude of incident light with wavelength λ and angle θ on the optical element is within the closed-circuit boundary. L The absolute value of the phase φ integral over the given area is: , in L Centered on point A(λ0, θ0), with semi-axis λ L =10 nm and θ L An ellipse with a radius of 5° ds It is the differential in space λ, θ. And the λ of the light source 1s and θ 1s Located within the closed enclosure line L Inside. 2. The optical device according to claim 1, wherein the thickness of the first layer and / or the second layer is spatially modulated: d2 = d2(x,y). 3. The optical device according to claim 1, wherein the thickness of the second layer does not exceed 30 nm. 4. The optical device according to claim 3, wherein the second layer is made of gold, copper, silver or aluminum. 5. The optical device according to claim 3, characterized in that the second layer is composed of ZnO, TiO2, ZnS, MgO, BeO, PbF2, CsI, HfO2, Sc2O3, SiN, GaP, CsPbBr3, CsPbCl3, CsPbI3, GaN, YVO4, MgAlO, YAlO, LuAlO, AlSb, GaSb, InSb, AlAs, GaAs, InAs, BC, SiC, TiC, VC, CsCl, CuCl, BaF, CeF3 , LaF3, LiF, SrF2, LiI, KI, RbI, CaMoO4, SrMoO4, PbMoO4, LiNbO3, KNbO3, VN, ZrO2, GeO2, TeO2, WO3, Fe2O3, Y2O3, L u2O3, Nb2O5, Ta2O5, Fe3O4, InP, CdSe, PbSe, ZnSe, AgGaS2, CdGa2S4, CdS, CuGaS2, CdTe, Te, ZnTe, BaTiO3, Bi4Ti3O 12PbTiO3, SrTiO3, diamond, graphite, graphene, graphene oxide, MoS2, WS2, MoSe2, WSe2, Cd3As2, Cd3Sb2, Cr2AlC, Cr2C, Mn2AlC, Mo2C, Mo2Ga2C, Mo3AlC2, Nb2AlC, Nb2C, Nb4AlC3, Nb4C3, Ta2C, Ta4AlC3, Ti2AlC, Ti2Al N, Ti2C, Ti2N, Ti3AlC2, Ti3C2, Ti3CN, Ti3SiC2, Ti4N3, V2AlC, V2C, V4AlC3, V4C3, SnS2, SnSe2, ReS2, ReSe2, hBN, GaSe, Sb2Te3, PdS2, PdSe2, PtS2, PtSe2, GaS, GaTe, Ca(OH)2, K(FeMg)3Si3AlO 10 (OH)2, Mg(OH)2, MnO2, MoO3, Sb2O3, Sb2OS2, Sb2Se3, Sb2S3, As2S3, As2Te3, Bi2O2Se, Bi2Se3, Bi2TeO2, BiSbTe3, Bi2S 3. Bi2Te3, AsP, CdI2, CdPS3, CuS, CoPS3, Cr2Ge2Te6, Cr2S3, CrBr3, CrCl3, CrGeTe3, CrPS4, CrSeBr, CuCrP2S6, CuIn7Se 11 , FeCl2, FePS3, FePSe3, MoTe2, GaGeTe, GaInS3, GaSeTe, GaSSe, GaPS4, GaSTe, GeAs, GeSe, GeS, GeS2, GeTe, HfSe2, HfS2, HfTe2, In2S3, In2Se3, InSe, InTe, InGaSe2, InSeBr, InSnSe, MnPS3, MnPSe3, MoSSe, MoWSe2, MoWS2, MoWTe2, MoNbSe2, MoO 2.5 Cl 0.5, MoReS2, MoTaSe2, MoVSe2, Na2Co2TeO6, Nb2SiTe4, NbReS2, NbReSe2, NbS3, Ni2SiTe4, Ni3TeO6, NiCl2, NiI2, NiPS3, PbI2, PbTe, PtTe2, ReMoS2, ReNbS2, ReN bSe2, ReSSe, SbAsS3, SbSe, SbSI, SiP, SnPSe3, SnS, Ta2NiS5, TaS2, TaS3, TaSe2, TaWSe2, TlSe, TiBr3, SnTe2, TiS3, TlGaS2, TlGaSe2, TlGaTe2, TlInS2, WTe2, WSSe, WNbSe2, WReSe2, ZrS2, ZnIn2S4, ZnPS3, ZnPSe3, ZrGeTe4, ZrS3, ZrSe2, ZrSe3, ZrTe2, ZrTe3, Cr2Si2Te6, Cr2Te3, CrI3, CrSBr, CrTe2, Fe3GeTe2, Fe4Ge Te2, TaCo2Te2, VS2, VSe2, VTe2, BiSbTeSe, BiTe, CuFeTe, HfTe5, FeSe, FeTeSe, FeTe, NbS2, NbSe2, NbTe2, NbTe4, NiTe2, PdBi2, PdTe2, SnTaS2, TaTe2, TiTe2, Tl2Ba2CaCu2O8, ZrSiS, CdAs2, CuSi2P3, NbAs2, PbTaSe2, Ta2NiSe5, Ta2NiTe5, Ta2Se8I, TaNi2Te3, TiS2, TiSe2, WNbTe2, ZnAs2, ZrTe5, LaTe2, NbSe3, Bi2SeTe2, Bi2Te2S, BiInTe3, Bi2Se 1.5 Te 1.5 Bi4Te 1.5 S 1.5 It is made from GeBi2Te4, PbBi2Te4, SnBi4Te7, SnSb2Te4, NiTe, SbTe, SiTe2, BiTeI, InSSe, PbSnS2, TlGaS3, C3N4, Cu2Te, GeSeTe, MnTe, As2Se3, CrPS3, SnSe, WReS2, TiBr, BaTiS3, Al2O3, BiFeO3, Ag3AsS3, HgS, bismuth, strontium, calcium, copper oxides, black arsenic, or black phosphorus. 6. The optical device according to claim 1, wherein the light source is linearly polarized and monochromatic, and the center wavelength is λ. 1s . 7. The optical device according to claim 1, characterized in that the phase φ is the phase of the complex scattering amplitude of the light in the reflection channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization , in r 0123 It is the reflectivity of optical elements. , –For s-polarization, , –For p-polarization, , , i , j It is the layer index number. ε i It is the first i The dielectric conductivity of the layer, d i It is the first i The thickness of the layer, ε0 is the permittivity of the medium from which the light originates. 8. The optical device according to claim 1, characterized in that the phase φ is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization , Where t 0123 It refers to the transmittance of optical components. , –For s-polarization, , –For p-polarization, , , i and j are the layer index numbers. ε i It is the dielectric conductivity of the i-th layer. d i It is the thickness of the i-th layer. ε0 is the permittivity of the medium from which the light originates. 9. An optical element comprising a first optically transparent dielectric layer of thickness d1 and dielectric conductivity ε1 and a second absorbing material layer of thickness d2 and dielectric conductivity ε2 arranged sequentially, characterized in that it is provided with an adhesive layer deposited on a free surface of the first layer or the second layer, wherein the layer is configured to form topological dark states by making the first layer a polymer film of thickness d1 = 0.01-100 µm and ε1 = 1.7-4.0, and the second layer being made of a metal of thickness d2 ≤ 30 nm and |ε2| = 1-10. 10. The optical element according to claim 9, wherein the second layer is made of gold, copper, silver or aluminum. 11. The optical element according to claim 9, wherein the thickness of the second layer is spatially modulated. 12. The optical element according to claim 11, wherein the second layer is manufactured in the form of a diffraction grating.

Claims

1. An optical device comprising a spectrum with wavelength λ 1s A light source implemented as an image projector, and a plane in the (x,y) plane whose normal is at an angle θ to the optical axis of the light source. 1s An optical element for an angle, wherein the optical element comprises at least a first optically transparent dielectric layer with a thickness of d1 and a dielectric conductivity of ε1, a second absorbing two-dimensional material layer with a thickness of d2 < 100 nm and a dielectric conductivity of ε2, and an optically transparent substrate with a dielectric conductivity of ε3, wherein the layers and the substrate are configured to form a topological dark state point A(λ0, θ0), wherein... The complex scattering amplitude of incident light with wavelength λ and angle θ on the optical element is within the closed loop. L The absolute value of the phase φ integral over the given area is: ， in L Centered on point A(λ0, θ0), with semi-axis λ L =10 nm and θ L An ellipse with a radius of 5° ds It is the differential in space λ, θ. And the λ of the light source 1s and θ 1s Located within the closed enclosure line L Inside.

2. The optical device according to claim 1, characterized in that... The thickness of the first layer and / or the second layer is spatially modulated: d2=d2(x,y).

3. The optical device according to claim 1, characterized in that... The thickness of the second layer does not exceed 30 nm.

4. The optical device according to claim 3, characterized in that... The second layer is made of gold, copper, silver or aluminum.

5. The optical device according to claim 3, characterized in that... The second layer is composed of ZnO, TiO2, ZnS, MgO, BeO, PbF2, CsI, HfO2, Sc2O3, SiN, GaP, CsPbBr3, CsPbCl3, CsPbI3, GaN, YVO4, M gAlO, YAlO, LuAlO, AlSb, GaSb, InSb, AlAs, GaAs, InAs, BC, SiC, TiC, VC, CsCl, CuCl, BaF, CeF3, LaF3, LiF, S rF2, LiI, KI, RbI, CaMoO4, SrMoO4, PbMoO4, LiNbO3, KNbO3, VN, ZrO2, GeO2, TeO2, WO3, Fe2O3, Y2O3, Lu2O3, N b2O5, Ta2O5, Fe3O4, InP, CdSe, PbSe, ZnSe, AgGaS2, CdGa2S4, CdS, CuGaS2, CdTe, Te, ZnTe, BaTiO3, Bi4Ti3O 12 PbTiO3, SrTiO3, diamond, graphite, graphene, graphene oxide, MoS2, WS2, MoSe2, WSe2, Cd3As2, Cd3Sb2, Cr2AlC, Cr2C, Mn2AlC, Mo2C, Mo2Ga2C, Mo3AlC2, Nb2AlC, Nb2C, Nb4AlC3, Nb4C3, Ta2C, Ta4AlC3, Ti2AlC, Ti2Al N, Ti2C, Ti2N, Ti3AlC2, Ti3C2, Ti3CN, Ti3SiC2, Ti4N3, V2AlC, V2C, V4AlC3, V4C3, SnS2, SnSe2, ReS2, ReSe2, hBN, GaSe, Sb2Te3, PdS2, PdSe2, PtS2, PtSe2, GaS, GaTe, Ca(OH)2, K(FeMg)3Si3AlO 10 (OH)2, Mg(OH)2, MnO2, MoO3, Sb2O3, Sb2OS2, Sb2Se3, Sb2S3, As2S3, As2Te3, Bi2O2Se, Bi2Se3, Bi2TeO2, BiSbTe3, Bi2S 3. Bi2Te3, AsP, CdI2, CdPS3, CuS, CoPS3, Cr2Ge2Te6, Cr2S3, CrBr3, CrCl3, CrGeTe3, CrPS4, CrSeBr, CuCrP2S6, CuIn7Se 11 、FeCl2、FePS3、FePSe3、MoTe2、GaGeTe、GaInS3、GaSeTe、GaS Se、GaPS4、GaSTe、GeAs、GeSe、GeS、GeS2、GeTe、HfSe2、HfS2、 HfTe2, In2S3, In2Se3, InSe, InTe, InGaSe2, InSeBr, InSnSe, MnPS3, MnPSe3, MoSSe, MoWSe2, MoWS2, MoWTe2, MoNbSe2, MoO2 2.5 Cl 0.5 、MoReS2、MoTaSe2、MoVSe2、Na2Co2TeO6、Nb2SiTe4、NbReS2、NbReSe2、NbS3、Ni 2SiTe4、Ni3TeO6、NiCl2、NiI2、NiPS3、PbI2、PbTe、PtTe2、ReMoS2、ReNbS2、ReN bSe2、ReSSe、SbAsS3、SbSe、SbSI、SiP、SnPSe3、SnS、Ta2NiS5、TaS2、TaS3、TaSe 2、TaWSe2、TlSe、TiBr3、SnTe2、TiS3、TlGaS2、TlGaSe2、TlGaTe2、TlInS2、WTe2、 WSSe、WNbSe2、WReSe2、ZrS2、ZnIn2S4、ZnPS3、ZnPSe3、ZrGeTe4、ZrS3、ZrSe2、Z rSe3、ZrTe2、ZrTe3、Cr2Si2Te6、Cr2Te3、CrI3、CrSBr、CrTe2、Fe3GeTe2、Fe4Ge Te2, TaCo2Te2, VS2, VSe2, VTe2, BiSbTeSe, BiTe, CuFeTe, HfTe5, FeSe, FeSe 、FeTe、NbS2、NbSe2、NbTe2、NbTe4、NiTe2、PdBi2、PdTe2、SnTaS2、TaTe2、TiTe2、 Tl2Ba2CaCu2O8、ZrSiS、CdAs2、CuSi2P3、NbAs2、PbTaSe2、Ta2NiSe5、Ta2NiTe5、Ta2Se8I、TaN i2Te3、TiS2、TiSe2、WNbTe2、ZnAs2、ZrTe5、LaTe2、NbSe3、Bi2SeTe2、Bi2Te2S、BiInTe3、Bi2Se 1.5 Tea 1.5 、Bi4Te 1.5 S 1.5 It is made from GeBi2Te4, PbBi2Te4, SnBi4Te7, SnSb2Te4, NiTe, SbTe, SiTe2, BiTeI, InSSe, PbSnS2, TlGaS3, C3N4, Cu2Te, GeSeTe, MnTe, As2Se3, CrPS3, SnSe, WReS2, TiBr, BaTiS3, Al2O3, BiFeO3, Ag3AsS3, HgS, bismuth, strontium, calcium, copper oxides, black arsenic, or black phosphorus.

6. The optical device according to claim 1, characterized in that... The light source is linearly polarized and monochromatic, with a center wavelength of λ. 1s .

7. The optical device according to claim 1, characterized in that... The phase φ is the phase of the complex scattering amplitude of the light in the reflection channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization ， in r 0123 It is the reflectivity of optical elements. ， –For s-polarization, ， –For p-polarization, ， ， i , j It is the layer index number. ε i It is the first i The dielectric conductivity of the layer, d i It is the first i The thickness of the layer, ε0 is the permittivity of the medium from which the light originates.

8. The optical device according to claim 1, characterized in that... The phase φ is the phase of the complex scattering amplitude of the light in the transmission channel, and the optical element is manufactured according to the following conditions: –For s-polarization or p-polarization ， Where t 0123 It refers to the transmittance of optical components. ， –For s-polarization, ， –For p-polarization, ， ， i and j are the layer index numbers. ε i It is the dielectric conductivity of the i-th layer. d i It is the thickness of the i-th layer. ε0 is the permittivity of the medium from which the light originates.

9. An optical element comprising a first optically transparent dielectric layer of thickness d1 and dielectric conductivity ε1 and a second absorbing material layer of thickness d2 and dielectric conductivity ε2, arranged sequentially, characterized in that... It is provided with an adhesive layer deposited on the free surface of the first layer or the second layer, wherein the layer is configured to form topological dark state points by making the first layer a polymer film with a thickness d1=0.01-100 µm and ε1=1.7-4.0, and the second layer made of a metal with a thickness d2≤30nm and |ε2|=1-10.

10. The optical element according to claim 9, characterized in that... The second layer is made of gold, copper, silver or aluminum.

11. The optical element according to claim 9, characterized in that... The thickness of the second layer is spatially modulated.

12. The optical element according to claim 11, characterized in that... The second layer is fabricated in the form of a diffraction grating.

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