Mass transfer device and mass transfer method thereof

Abstract

A mass transfer device (100) and a mass transfer method thereof are provided. The mass transfer device (100) comprises a bearing part (110), a pick-and-place part (120), a detection part (130) and a control part (140). The bearing part (110) is used for fixing at least one of the first substrate (SUB1) and the second substrate (SUB2). The taking and placing part (120) is used for taking a target object (CP) from the first substrate (SUB1) or placing the target object (CP) on the second substrate (SUB2) through control. The detection part (130) is used for detecting the relative position of at least one of the first substrate (SUB1) and the second substrate (SUB2) and the pick-and-place part (120), and is used for generating relative position information for controlling the movement of the bearing part (110) and the pick-and-place part (120). The control part (140) is coupled to the bearing part (110), the pick-and-place part (120) and the detection part (130), and is used for controlling the operation of the bearing part (110) and the pick-and-place part (120) according to the relative position information. When the pick-and-place part (120) places the target (CP) on the second substrate (SUB2), the bearing part outputs energy to the second substrate (SUB2) through control, so that the adhesive force of the target (CP) to the second substrate (SUB2) is larger than that of the target (CP) to the pick-and-place part (120).

Description

Mass transfer device and mass transfer method thereof Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a mass transfer device and a mass transfer method thereof. Background Art

[0002] The size of LEDs varies depending on their application. Large-sized LEDs can be used in lighting or disinfection (such as UV LEDs), while small-sized LEDs (such as mini-LEDs or micro-LEDs) can be used in display backlight modules or directly used as pixels in display panels (such as self-luminous display panels such as OLEDs).

[0003] For small LED chips, especially micro-LEDs, the lattice matching of the materials and the differences in substrate size necessitate a micro-LED thin film transfer process after the epitaxial growth process to transfer the millions of micron-sized micro-LEDs to the display substrate. This process of transferring micro-LEDs to the display substrate is known as mass transfer technology. Within the field of mass transfer technology, if the transfer process cannot be completed efficiently and within a reasonable timeframe, mass production is impossible.

[0004] Furthermore, while various mass transfer technologies have been introduced, no solution can simultaneously meet the requirements for high transfer volume and high precision. Consequently, commercialization of mass transfer technology still faces numerous challenges. For example, after mass-transferring multiple LED chips onto the display substrate of a display panel, defects (such as damage or short circuits) can occur due to inherent LED chip defects or errors during transfer, thereby reducing the display panel's manufacturing yield.

[0005] To improve the yield of display panels, chip inspection and repair processes are necessary after mass transfer. During chip inspection, defective LED chips are identified and then removed through repair. Afterward, new LED chips are installed in the same locations, completing the display substrate repair.

[0006] However, in existing repair processes, removing defective LED chips and replacing them with new ones is extremely time-consuming. This process can also damage surrounding LED chips while removing the defective chip, potentially causing other LED chips around the original defective chip to become defective as well. This increases the cost of display panel production. Furthermore, the equipment used to remove and place LED chips during the repair process, as well as the solder used for reflow soldering, often face various limitations when applied to small-sized LEDs, making repair difficult.

[0007] Furthermore, because the number of chips involved in mass transfer is orders of magnitude greater than in traditional applications, defective products generated during the mass transfer and placement process are a key concern, necessitating electrical testing of these defective products. However, in the current micro-LED device manufacturing process, electrical testing requires access to the circuitry connecting the components, and therefore is typically performed only in the final stages before shipment.

[0008] On the other hand, after multiple LED chips are arranged in the same direction on a row of substrates during the mass transfer process, if the chip bodies of the multiple LED chips are located at the bottom of the slots of the row of substrates and are not exposed, in order to fix them to the target substrate with the chip bodies facing upward, it is an important issue for technicians in this field to accurately and quickly flip the multiple LED chips with the chip bodies located at the bottom of the slots of the row of substrates so that they can be fixed to the target substrate in subsequent processes. In particular, it is important to prevent the multiple LED chips from falling during the flipping process.

[0009] Furthermore, after flipping over the multiple LED chips, how to quickly and smoothly fix them to the target substrate with the chip bodies facing upward is also an important issue for those skilled in the art.

[0010] Summary of the Invention

[0011] One of the objectives of the present disclosure is to provide a display panel that can effectively improve the efficiency of chip repair operations after mass production.

[0012] One of the objectives of the present disclosure is to provide a mass transfer device and a mass transfer method thereof, which can effectively improve the success rate of picking up and placing target objects.

[0013] The present disclosure aims to provide an electrical testing device and an electrical testing method, which can effectively improve the efficiency and precision of transfer.

[0014] The presently disclosed embodiment provides a mass transfer device, which includes a carrying portion, a pick-and-place portion, a detection portion, and a control portion. The carrying portion is used to fix at least one of a first substrate and a second substrate, and to adjust the position of at least one of the first substrate and the second substrate. The pick-and-place portion is arranged relative to the carrying portion, and is used to control the removal of a target object from the first substrate, or to place the target object on the second substrate. The detection portion is arranged relative to the carrying portion and the pick-and-place portion, and is used to detect the relative position of at least one of the first substrate and the second substrate and the pick-and-place portion, and is used to generate relative position information for controlling the movement of the carrying portion and the pick-and-place portion. The control portion is coupled to the carrying portion, the pick-and-place portion, and the detection portion, and is used to control the operation of the carrying portion and the pick-and-place portion according to the relative position information. When the pick-and-place portion places the target object on the second substrate, the carrying portion is controlled to output energy to the second substrate so that the adhesion force of the target object to the second substrate is greater than the adhesion force of the target object to the pick-and-place portion.

[0015] The present disclosure provides a mass transfer device comprising a supporting portion, a loading and unloading portion, a detection portion, a control portion, and an alignment portion. The supporting portion is adapted to support an array of substrates. The alignment portion is disposed on the supporting portion and is configured to apply a force to the array of substrates on the supporting portion, thereby aligning the LED chips on the array of substrates to corresponding positions on the array of substrates.

[0016] The present disclosure provides a mass transfer device comprising a pick-and-place unit and an adhesive substrate. The pick-and-place unit is configured to pick up and place multiple objects. The adhesive substrate is disposed within the pick-and-place unit. The adhesive substrate comprises a rigid layer and an adhesive layer. The adhesive layer is disposed on a substrate body. The adhesive layer comprises one or more first protrusions configured to contact the objects for pick-and-place.

[0017] The present disclosure provides a mass transfer method applicable to the mass transfer device described above, wherein the mass transfer device further comprises a carrying portion. The carrying portion is used to carry a first column of substrates and a second column of substrates, and is characterized in that it comprises the following steps: applying a force to a plurality of targets so that the plurality of targets fall onto the first column of substrates in a first direction; controlling the pick-and-place portion to obtain the plurality of targets from the first column of substrates; controlling the pick-and-place portion to place the obtained plurality of targets on the second column of substrates; applying a force to the plurality of targets on the second column of substrates via the second column of substrates so that the adhesion force of the plurality of targets to the second column of substrates is greater than the adhesion force of the targets to the pick-and-place portion, so that the plurality of targets are transferred from the pick-and-place portion to the second column of substrates.

[0018] In some embodiments of the present disclosure, the adhesive layer further includes a second protruding structure, the second protruding structure being disposed on the substrate body, and the first protruding structure being disposed on the second protruding structure.

[0019] In some embodiments of the present disclosure, the second protruding structure is in the shape of a cuboid, a cylinder, or a triangle.

[0020] In some embodiments of the present disclosure, the shape of the first protruding structure is the same as the shape of the second protruding structure.

[0021] In some embodiments of the present disclosure, the shape of the first protruding structure is different from the shape of the second protruding structure.

[0022] In some embodiments of the present disclosure, a cross-sectional area of ​​the first protrusion structure is smaller than a cross-sectional area of ​​the second protrusion structure.

[0023] In some embodiments of the present disclosure, the sum of the cross-sectional areas of the first protrusion structures disposed on the same second protrusion structure is smaller than the cross-sectional area of ​​the second protrusion structure.

[0024] In some embodiments of the present disclosure, the first protruding structure is in the shape of a cuboid, a cylinder, or a triangle.

[0025] The present disclosure provides an entire array of substrates, comprising a main body and a plurality of slots formed on the main body, wherein at least one of the slots comprises the following structure: a first sidewall, a second sidewall, a first bottom surface, and a second bottom surface. The first sidewall surrounds the periphery of the first bottom surface, and the bottom of the first sidewall is connected to the first bottom surface. One side of the second bottom surface is connected to the top of the first sidewall. The second sidewall surrounds the periphery of the second bottom surface, and the bottom of the second sidewall is connected to the other side of the second bottom surface. The total height of the first sidewall and the second sidewall is greater than the width of the first bottom surface.

[0026] The presently disclosed embodiment provides a substrate array, comprising a main body, a plurality of slots formed on the main body, and a plurality of microporous structures, wherein at least one of the slots comprises the following structures: a first bottom surface and a first sidewall. The first sidewall surrounds the periphery of the first bottom surface, and the bottom of the first sidewall is connected to the first bottom surface. The plurality of microporous structures are respectively configured to correspond to the slots and are formed between the first bottom surface and the bottom of the main body. Each of the microporous structures has a first opening and a second opening, the first opening being exposed to the first bottom surface, and the second opening being exposed to the bottom of the main body.

[0027] The present disclosure provides an array substrate comprising a body and a plurality of slots formed in the body, wherein at least one of the slots comprises the following structure: a first bottom surface and a first sidewall. The first sidewall surrounds the first bottom surface, and the bottom of the first sidewall is connected to the first bottom surface, wherein at least one side of the first sidewall is not perpendicular to the first bottom surface.

[0028] The presently disclosed embodiment proposes a mass transfer method, which is applicable to a mass transfer device comprising a pick-and-place portion and a carrying portion, wherein the carrying portion is used to carry a first substrate and a second substrate, and is characterized in that it comprises the following steps: performing position detection on at least one of the first substrate and the second substrate to obtain relative position information; adjusting the relative position of the pick-and-place portion and the carrying portion according to the relative position information; controlling the pick-and-place portion to obtain a target object from the first substrate; controlling the pick-and-place portion to place the obtained target object on the second substrate; and outputting energy to the second substrate so that the adhesion force of the target object to the second substrate is greater than the adhesion force of the target object to the pick-and-place portion.

[0029] The presently disclosed embodiment proposes a mass transfer method, which is applicable to a mass transfer device comprising a pick-and-place portion and a carrying portion, wherein the carrying portion is used to carry a first column of substrates and a second column of substrates, and is characterized in that it comprises the following steps: applying a force to a plurality of target objects so that the plurality of target objects fall onto the first column of substrates respectively in a first direction; controlling the pick-and-place portion to obtain the plurality of target objects from the first column of substrates; controlling the pick-and-place portion to place the obtained plurality of target objects on the second column of substrates; applying a force to the plurality of target objects on the second column of substrates through the second column of substrates so that the adhesion force of the plurality of target objects to the second column of substrates is greater than the adhesion force of the target objects to the pick-and-place portion, so that the plurality of target objects are transferred from the pick-and-place portion to the second column of substrates.

[0030] In some embodiments of the present disclosure, the first entire array of substrates includes a body and a plurality of slots formed on the body, wherein at least one of the plurality of slots has a trapezoidal cross-sectional structure.

[0031] In some embodiments of the present disclosure, the second entire array substrate includes a body, a plurality of slots formed on the body, and a plurality of microporous structures, wherein the force applied to the plurality of targets is applied through the plurality of microporous structures.

[0032] In some embodiments of the present disclosure, the mass transfer method further includes the following step: performing electrical detection on the targets in the plurality of slots through a second entire row of substrates.

[0033] The present disclosure provides a substrate array comprising a substrate body, a plurality of slots, a plurality of material receiving portions, and a curable magnetic material. The plurality of slots are arranged in the substrate body, each of which accommodates a plurality of LED chips. The plurality of material receiving portions are formed at the bottoms of the slots. The curable magnetic material is disposed in the plurality of material receiving portions and cured to form a magnetic structure. The magnetic properties of the curable magnetic material correspond to the magnetic properties of the plurality of LED chips.

[0034] In some embodiments of the present disclosure, the support portion includes a plurality of support platforms for respectively securing the first substrate and the second substrate, and the pick-and-place portion includes a multi-axis motion control mechanism and a clamping mechanism. The multi-axis motion control mechanism is configured to be controlled to move in three-dimensional space, wherein the multi-axis motion control mechanism has a first motion mode during movement, and when the multi-axis motion control mechanism moves in the first motion mode, its three-dimensional coordinates are simultaneously changed. The clamping mechanism is connected to the multi-axis motion mechanism and is driven by the movement of the multi-axis motion control mechanism.

[0035] In some embodiments of the present disclosure, the supporting portion further includes an adhesive substrate. The adhesive substrate is configured to be fixed to the clamping mechanism and has an adhesive layer arranged in a first direction. When the multi-axis movement control mechanism moves to align with at least one of the first and second substrates based on the relative position information, the first direction is a direction toward the one of the substrates.

[0036] In some embodiments of the present disclosure, the adhesive substrate has a comb-like structure.

[0037] In some embodiments of the present disclosure, the curable magnetic material is injected into the plurality of material receiving portions in an uncured state before being cured.

[0038] In some embodiments of the present disclosure, the curable magnetic material is a magnetic fluid.

[0039] In some embodiments of the present disclosure, components of the curable magnetic material include: carbon (C), oxygen (O), and iron (Fe).

[0040] In some embodiments of the present disclosure, the curable magnetic material has a carbon content (C) of 42.8%, an oxygen content (O) of 19.5%, and an iron content (Fe) of 37.7%.

[0041] In some embodiments of the present disclosure, the material receiving portion is a hole or a groove, and corresponds to the lower bottom side of the LED chip.

[0042] In some embodiments of the present disclosure, when the material receiving portion is a hole, the hole is a bottomed hole or a through hole.

[0043] In some embodiments of the present disclosure, the material accommodating portion is configured to have a certain distance from the inner side wall of the corresponding slot.

[0044] In some embodiments of the present disclosure, when looking down at the substrate body, the cross-sectional area of ​​the material accommodating portion is smaller than the bottom area of ​​the LED chip.

[0045] The embodiment of the present disclosure proposes an LED chip, comprising: a light-emitting layer, a first electrode, a second electrode, a third electrode, an insulating layer, a sacrificial layer, and a giant transfer layer. The first electrode and the second electrode are arranged on one side of the light-emitting layer, and the third electrode is arranged on the other side opposite to the light-emitting layer. The insulating layer is arranged on the same side as the first electrode and the second electrode, and is formed between the first electrode and the second electrode. The sacrificial layer is formed on the surface of the light-emitting layer on the side where the third electrode is arranged and extends to the side of the light-emitting layer and the first electrode / the second electrode. The giant transfer layer is formed on the sacrificial layer and the third electrode, and is electrically connected to the third electrode, wherein the giant transfer layer has an asymmetric cross-sectional structure.

[0046] The embodiment of the present disclosure proposes a display panel, comprising: a display substrate, a plurality of LED chips, and a plurality of signal lines. The plurality of LED chips are arranged on the display substrate. The plurality of signal lines are formed on the display substrate and are electrically connected to the plurality of LED chips. The display substrate comprises a plurality of configuration areas and a plurality of spare areas. The plurality of configuration areas are arranged in an array on the display substrate, wherein the plurality of LED chips are respectively arranged in the plurality of configuration areas. The plurality of spare areas are arranged in an array on the display substrate, and are arranged in an alternating pattern with at least part of the configuration areas, wherein the plurality of spare areas are used to receive LED chips.

[0047] In some embodiments of the present disclosure, when one of the plurality of spare areas is configured with an LED chip, the LED chip in the spare area and the LED chip in the adjacent configuration area are electrically connected to the same signal line.

[0048] In some embodiments of the present disclosure, when an LED chip in one of the plurality of configuration areas is in a defective state, the LED chip is configured in a spare area adjacent to the one of the configuration areas.

[0049] In some embodiments of the present disclosure, the plurality of configuration areas include: a plurality of first configuration areas, in which the plurality of LED chips having a first wavelength are configured; a plurality of second configuration areas, in which the plurality of LED chips having a second wavelength are configured; and a plurality of third configuration areas, in which the plurality of LED chips having a third wavelength are configured. The plurality of first configuration areas, the plurality of second configuration areas, and the plurality of third configuration areas are sequentially arranged on the display substrate.

[0050] In some embodiments of the present disclosure, the multiple spare areas include: multiple first spare areas, each located between two adjacent first configuration areas, and suitable for receiving LED chips with the first wavelength; multiple second spare areas, each located between two adjacent second configuration areas, and suitable for receiving LED chips with the second wavelength; and multiple third spare areas, each located between two adjacent third configuration areas, and suitable for receiving LED chips with the third wavelength.

[0051] The presently disclosed embodiment proposes a mass transfer method, which is applicable to a mass transfer device comprising a pick-up and placement portion and a carrying portion, wherein the carrying portion is used to carry a first substrate, a redirecting substrate, and a second substrate, and is characterized in that it comprises the following steps: controlling the pick-up and placement portion to obtain the multiple targets from the first substrate; controlling the pick-up and placement portion to place the obtained multiple targets on the redirecting substrate; moving and flipping the redirecting substrate so that the multiple targets face the carrying portion; moving the surface of the redirecting substrate on which the multiple targets are adhered toward the second substrate, and causing the multiple targets to contact the target substrate; and outputting energy so that the adhesion force of the multiple targets to the second substrate is greater than the adhesion force of the multiple targets to the redirecting substrate.

[0052] In some embodiments of the present disclosure, the second substrate includes a connecting layer, and the connecting layer has a thickness of 1.0 to 5.0 μm.

[0053] In some embodiments of the present disclosure, the connecting layer has an adhesion force of 400 to 1000 KPa.

[0054] In some embodiments of the present disclosure, the redirecting substrate includes an adhesive layer, wherein the adhesive layer is composed of heat-resistant polyester and adhesive materials are disposed on both sides thereof.

[0055] In some embodiments of the present disclosure, the thickness of the heat-resistant polyester of the adhesive layer may be between 17 μm and 33 μm, and the thickness of the adhesive material may be between 14 μm and 26 μm.

[0056] In some embodiments of the present disclosure, the adhesive force of the adhesive material is between 0.2 N / 25 mm and 20.5 N / 25 mm.

[0057] The present disclosure provides a display panel comprising: a display substrate, a plurality of LED chips, and a plurality of signal lines. The plurality of LED chips are disposed on the display substrate. The plurality of signal lines are formed on the display substrate and electrically connected to the plurality of LED chips. The display substrate comprises a plurality of pixel configuration areas arranged in an array on the display substrate, wherein the plurality of LED chips are respectively configured within the plurality of pixel configuration areas; and each of the pixel configuration areas comprises: a first chip configuration area configured to accommodate two LED chips having a first wavelength in each row and column; two second chip configuration areas configured to accommodate two LED chips having a second wavelength in each row and column, with two adjacent sides of the first chip configuration area corresponding to one side of each of the two second chip configuration areas; and a third chip configuration area configured to accommodate two LED chips having a third wavelength in each row and column, with two adjacent sides of the third chip configuration area corresponding to the other side of each of the two second chip configuration areas, wherein one side of each second chip configuration area is adjacent to the other side, and the first chip configuration area and any of the second chip configuration areas are located on the same imaginary line.

[0058] In some embodiments of the present disclosure, the display panel further includes: a color gamut control unit, which is electrically connected to the plurality of LED chips via the plurality of signal lines to adjust the brightness of at least one of the plurality of LED chips.

[0059] The disclosed embodiment provides an electrical detection device, which includes a substrate and a fixture portion. The substrate is used to carry a plurality of targets after mass transfer. The electrical detection device is used to perform electrical detection on the targets. The fixture portion is arranged relative to the substrate. The fixture portion includes a light-transmitting upper electrode fixture. During the electrical detection, the upper electrode fixture is connected to a plurality of targets, and the substrate serves as the lower electrode of the plurality of targets. When the upper electrode fixture and the lower electrode are energized, a voltage difference is generated to drive the target to emit light. After the light beam passes through the fixture portion, the electrical detection device performs electrical detection on the target.

[0060] In some embodiments of the present disclosure, the fixture portion further includes a light-transmitting substrate, and the upper electrode fixture is disposed on the light-transmitting substrate.

[0061] In some embodiments of the present disclosure, the upper electrode fixture is arranged corresponding to the light-emitting layers of multiple targets.

[0062] In some embodiments of the present disclosure, the multiple targets are vertical Micro LED chips.

[0063] In some embodiments of the present disclosure, the electrical testing device further includes a testing unit, a power supply unit, and a control unit. The testing unit is disposed relative to the substrate and the fixture unit so that the testing range covers at least a portion of the substrate and the fixture unit. The testing unit is configured to capture images of the substrate and the fixture unit. The power supply unit is configured to supply voltage and current to the upper electrode fixture and the substrate during electrical testing. The control unit is coupled to the substrate, the fixture unit, the testing unit, and the power supply unit. The control unit is configured to control the operation of the testing unit and the power supply unit.

[0064] The disclosed embodiments provide an electrical testing method for LED chips, applicable to an electrical testing device including a fixture. The electrical testing method includes: performing position detection on an LED chip placed on a substrate after mass transfer to obtain position information; adjusting the upper electrode fixture of the fixture to the corresponding position of the LED chip based on the position information; supplying voltage and current to the LED chip to perform a lighting test; capturing images of the substrate and fixture during the lighting test; and analyzing the captured test data to determine whether the LED chip is lit. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] 1A and 1B are schematic diagrams of mass transfer devices according to different embodiments of the present disclosure;

[0066] 2A and 2B are flowcharts of the steps of a mass transfer method according to different embodiments of the present disclosure;

[0067] 3A to 3C are schematic diagrams of configurations of mass transfer devices according to different embodiments of the present disclosure;

[0068] 4A and 4B are schematic diagrams of configurations of adhesive substrates according to some embodiments of the present disclosure;

[0069] 5A to 5C are schematic diagrams of a process of performing mass transfer by a mass transfer apparatus according to some embodiments of the present disclosure;

[0070] 6A to 6F are schematic diagrams of a process of performing mass transfer by a mass transfer apparatus according to some embodiments of the present disclosure;

[0071] 7A to 7L are schematic diagrams of a process of performing mass transfer by a mass transfer apparatus according to some embodiments of the present disclosure;

[0072] 8A to 8K are schematic diagrams of a process of performing mass transfer by a mass transfer apparatus according to some embodiments of the present disclosure;

[0073] 9A to 9G are schematic diagrams of a process of performing mass transfer by a mass transfer apparatus according to some embodiments of the present disclosure;

[0074] 10A to 10C are schematic diagrams of the structural configuration of an entire array of substrates according to different embodiments of the present disclosure;

[0075] 11A to 11H are schematic cross-sectional views of an entire array of substrates according to different embodiments of the present disclosure;

[0076] FIG12 is a schematic diagram of the structural configuration of LED chips according to some embodiments of the present disclosure;

[0077] 13A to 13I are schematic diagrams of the manufacturing process of LED chips according to some embodiments of the present disclosure;

[0078] 14A to 14D are schematic diagrams of the structural configuration of display panels according to some embodiments of the present disclosure;

[0079] 15A to 15C are schematic diagrams of the structural configuration of display panels according to some embodiments of the present disclosure;

[0080] FIG16 is a schematic diagram of an electrical detection device according to an embodiment of the present disclosure;

[0081] 17A and 17B are schematic structural diagrams of a fixture portion according to an embodiment of the present disclosure;

[0082] 18A to 18C are schematic diagrams of the testing process of electrical testing devices according to different embodiments of the present disclosure; and

[0083] FIG19 is a flowchart of the steps of the electrical detection method according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0084] To make the above-mentioned objectives, features, and advantages of this technical solution more clearly understood, specific embodiments of the proposed technical solution are described in detail below with reference to the accompanying drawings. The following descriptions of the various embodiments of the technical solution of the present invention are for illustrative purposes only and are not intended to be all embodiments of the present invention or to limit the present invention to specific embodiments. Based on the embodiments disclosed herein, all other embodiments obtained by persons of ordinary skill in the art without creative effort should fall within the scope of protection of the present invention.

[0085] It should be noted that when a component is referred to as being "disposed on" another component, it may be directly on the other component or there may also be a central component. When a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a central component at the same time. The terms "vertical", "horizontal", "left", "right", "up", "down" and similar expressions used herein are only intended to indicate relative positional relationships based on the accompanying drawings, and do not limit the components using the terms to being implemented only in a representative manner. When the absolute position of the object being described changes, the description of the relative position may also change accordingly.

[0086] The descriptions of "substantially", "substantially", "approximately" and so on in this article are used to recognize the error range implied by possible unintended effects and deviations in the manufacturing process or material selection. The error range may include a range of changes that do not significantly change the material structure, configuration, characteristics, and effects, such as a range of 0% to 10% deviation, wherein the error range is clear to those skilled in the art. For example, it is described that "two objects are substantially parallel", and in fact, if it is observed that there is a slight height difference between the two objects, but this height difference is negligible relative to the size of the objects themselves (for example, less than 10%) and does not affect the effect, then the relative configuration between the two objects observed will still be interpreted as being within the range of "substantially parallel" described in this article.

[0087] All descriptions of specific numerical values ​​herein, even when not explicitly stated, include the meaning of "approximately" or "substantially." This means that these specific values ​​include a possible range of numerical errors to account for possible unintended effects and deviations in the manufacturing process or material selection. This numerical error range may include variations that do not significantly alter the material structure, properties, or effects, such as a range of 0% to 10%. This error range is well understood by those skilled in the art.

[0088] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. The terms used herein in the specification of this disclosure are intended only to describe specific embodiments and are not intended to limit this disclosure. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0089] FIG1A is a schematic diagram of a mass transfer device according to some embodiments of the present disclosure. Referring to FIG1A , this embodiment relates to a mass transfer device 100 for transferring at least one target object CP on a first substrate SUB1 to a second substrate SUB2. The target object CP may be, for example, a small-sized electronic component such as an LED chip, specifically, a sub-micron light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED), but the present disclosure is not limited thereto. In other embodiments, the mass transfer device 100 may also be used to transfer other types of target objects CP in addition to LED chips. In some embodiments, the first substrate SUB1 may be a source substrate for carrying the target object CP, a column substrate for adjusting the arrangement of the target object CP, or a redirection substrate for changing the configuration direction of the target object CP, and the second substrate SUB2 may be the column substrate, the intermediate substrate, or a target substrate for carrying the transferred target object CP. In other words, the mass transfer device 100 of this embodiment may be capable of transferring between any of the types of the first substrate SUB1 described above and any of the types of the second substrate SUB2 described above. For example, the target object CP transfer is performed between a source substrate and a target substrate, between a source substrate and an array of substrates, between a source substrate and an intermediate substrate, between an array of substrates and an intermediate substrate, between an array of substrates and a target substrate, or between an intermediate substrate and a target substrate, but the present disclosure is not limited thereto. In some embodiments, based on the material and structure, the target substrate may be, for example, a semiconductor substrate (e.g., a silicon substrate), a photoelectric conversion substrate (e.g., an organic photoelectric conversion layer), a semiconductor on insulator (SOI) substrate, a glass substrate, or a flexible substrate, but the present disclosure is not limited thereto. Based on the function and purpose, the target substrate may be, for example, a display substrate.

[0090] In some embodiments, the semiconductor substrate may also be: an elemental semiconductor including germanium; a compound semiconductor including gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs) and / or indium antimonide (InSb); an alloy semiconductor including a silicon germanium (SiGe) alloy; or a combination thereof.

[0091] In some embodiments, the SOI substrate may include a base plate, a buried oxide (BOX) layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide layer.

[0092] In some embodiments, the glass substrate may include, for example, a plurality of thin film transistors (TFTs), and the TFTs may be N-type or P-type transistors.

[0093] In some embodiments, the flexible substrate may be formed of materials such as polyimide (PI) or polyethylene terephthalate (PET).

[0094] The mass transfer apparatus 100 of this embodiment includes a carrier 110, a pick-and-place unit 120, a detection unit 130, and a control unit 140. In this embodiment, the carrier 110 is used to fix the first substrate SUB1 and / or the second substrate SUB2 and to adjust the position of the first substrate SUB1 and / or the second substrate SUB2.

[0095] The pick-up and placement portion 120 is arranged relative to the supporting portion 110, and is used to control the acquisition of the target object CP from the first substrate SUB1, or to place the acquired target object CP on the second substrate SUB2. In some embodiments, the pick-up and placement portion 120 may include an adhesive substrate (not shown, and further examples will be given in subsequent embodiments) and a clamping mechanism. The adhesive substrate may be a rigid substrate, and one side of which is configured to have an adhesive force (or referred to as an adhesive surface). The clamping mechanism can be used to fix the adhesive substrate, and when the pick-up and placement portion 120 takes an object from the first substrate SUB1, the adhesive substrate is driven to move toward the first substrate SUB1 under control, and the adhesive surface of the adhesive substrate is brought into contact with the target object CP on the first substrate SUB1. Then, the clamping mechanism can drive the adhesive substrate away from the first substrate SUB1 and return to a preset position (or other position that does not contact the first substrate SUB1). At this time, the target object CP on the first substrate SUB1 is attached to the adhesive substrate due to the adhesive force of the adhesive substrate and leaves the first substrate SUB1 , thus completing the operation of the pick-and-place unit 120 to obtain the target object CP from the first substrate SUB1 .

[0096] The inspection unit 130 is disposed relative to the carrier unit 110 and the pick-and-place unit 120 such that its inspection range covers at least a portion of the carrier unit 110 and the pick-and-place unit 120. The inspection unit 130 is configured to detect the relative position of the first substrate SUB1 and / or the second substrate SUB2 disposed on the carrier unit 110 and the pick-and-place unit 120, thereby generating relative position information PDT for controlling the movement of the carrier unit 110 and the pick-and-place unit 120. In some embodiments, the inspection unit 130 may include one or more image capture devices, such as an optical microscope, a charge coupled device (CCD) image sensor, a complementary metal-oxide semiconductor (CMOS) image sensor, and an industrial camera, or a combination thereof, although this disclosure is not limited thereto.

[0097] The control unit 140 is coupled to the carrier unit 110, the pick-and-place unit 120, and the detection unit 130, and is configured to control the operations of the carrier unit 110 and the pick-and-place unit 120 based on the relative position information PDT. In some embodiments, the control unit 140 can be implemented using hardware, firmware, or software, and is not necessarily located within the mass transfer apparatus 100. For example, the control unit 140 can be implemented using an external computer, which can transmit signals to various modules in the mass transfer apparatus 100 via a specific transmission interface to achieve control.

[0098] In this embodiment, when the pick-and-place unit 120 places the target object CP on the second substrate SUB2, the support unit 110 is controlled to output energy to the second substrate SUB2 so that the adhesion of the target object CP to the second substrate SUB2 is greater than the adhesion of the target object CP to the pick-and-place unit 120, thereby transferring the target object CP from the pick-and-place unit 120 to the second substrate SUB2. The support unit 110 outputting energy to the second substrate SUB2 may, for example, heat the second substrate SUB2 to reduce the adhesion between the target object CP and the pick-and-place unit 120, or apply a contact or non-contact force to the second substrate SUB2 to improve the adhesion of the target object CP to the second substrate SUB2.

[0099] Specifically, the configuration of the mass transfer apparatus 100 described above enables the transfer of all (or at least a portion of) the target objects on the first substrate SUB1 to the second substrate SUB2 in a single operation, without the need for separate pick-and-place transfers of individual target objects CP. This significantly reduces the time required for mass transfer. Furthermore, the mass transfer apparatus 100 described above allows the target objects CP to be arranged during the transfer process by an entire array of substrates to a spacing and / or number that matches the final target transfer substrate. This allows the mass transfer apparatus 100 to transfer all the target objects CP on the entire array of substrates to the target substrate at once, effectively improving transfer efficiency.

[0100] The mass transfer apparatus 100 can be operated by a mass transfer method as shown in FIG2A , wherein FIG2A is a flowchart of the steps of the mass transfer method according to an embodiment of the present disclosure. Referring to FIG1A and FIG2A , the mass transfer method according to this embodiment includes: detecting the position of the first substrate SUB1 / the second substrate SUB2 to obtain relative position information PDT (step S110); adjusting the relative position of the pick-and-place unit 120 and the carrier unit 110 based on the relative position information PDT (step S120); controlling the pick-and-place unit 120 to obtain a target object CP from the first substrate SUB1 (step S130); controlling the pick-and-place unit 120 to place the obtained target object CP on the second substrate SUB2 (step S140); outputting energy to the second substrate SUB2 so that the adhesion force of the target object CP to the second substrate SUB2 is greater than the adhesion force of the target object CP to the pick-and-place unit 120 (step S150); and removing the pick-and-place unit 120 to separate the pick-and-place unit 120 from the target object CP (step S160).

[0101] Specifically, before performing the above steps, the adhesive substrate (not shown) of the pick-and-place unit 120 may be secured to a clamping mechanism (not shown). In step S110, the detection unit 130 detects the alignment mark on the first substrate SUB1 / second substrate SUB2 and / or the distance between the pick-and-place unit 120 and the first substrate SUB1 / second substrate SUB2 to confirm the relative positional relationship between the adhesive substrate and the first substrate SUB1 / second substrate SUB2, and generates relative position information PDT based on the alignment mark. The alignment mark may be, for example, a dummy region on the first substrate SUB1 / second substrate SUB2, or a specific pattern or object within the dummy region, but the present disclosure is not limited thereto. The relative position information PDT may include, for example, the relative displacement between the adhesive substrate and the first substrate SUB1 / second substrate SUB2 on a plane, as well as the distance between the adhesive substrate and the first substrate SUB1 / second substrate SUB2, but the present disclosure is not limited thereto.

[0102] For example, the detection unit 130 can obtain the relative displacement of the adhesive substrate and the first substrate SUB1 / the second substrate SUB2 on a plane by detecting the alignment marks of the adhesive substrate and the first substrate SUB1 / the second substrate SUB2, and obtain the spacing information between the adhesive substrate and the first substrate SUB1 / the second substrate SUB2 by recording the displacement data of the placement unit 120 moving to contact the first substrate SUB1 / the second substrate SUB2.

[0103] Next, in step S120, the control unit 140 may control the carrier 110 and / or the pick-and-place unit 120 to move in two or three dimensions based on the relative position information PDT, so that the adhesive substrate of the pick-and-place unit 120 is aligned with the first substrate SUB1 on the carrier 110 before the pick-and-place unit 120 picks and places the substrate (i.e., pre-aligned). For example, the control unit 140 may control the carrier 110 and the pick-and-place unit 120 to translate relative to each other at fixed intervals, so that the area on the first substrate SUB1 where the target object CP is disposed faces the adhesive substrate of the pick-and-place unit 120.

[0104] After pre-alignment is complete, in step S130, the control unit 140 controls the pick-and-place unit 120 to move toward the first substrate SUB1 on the carrier 110 until the adhesive surface of the adhesive substrate contacts the target object CP on the first substrate SUB1, causing the adhesive force of the adhesive substrate to act on the target object CP to be transferred. The control unit 140 then controls the pick-and-place unit 120 to move away from the first substrate SUB1, causing the target object CP, which is subject to the adhesive force, to move away from the first substrate SUB1 along with the adhesive substrate, thereby completing the process of removing the target object CP from the first substrate SUB1.

[0105] After acquiring the target object CP, in step S140, the control unit 140 further controls the pick-and-place unit 120 to move toward the second substrate SUB2 on the carrier unit 110, so that the target object CP contacts the second substrate SUB2. When the target object CP is placed on the second substrate SUB2, the control unit 110 further controls the carrier unit 110 to output energy to the second substrate SUB2. The output energy acts on the adhesive substrate and / or the second substrate SUB2, thereby increasing the adhesion of the second substrate SUB2 to the target object CP and / or reducing the adhesion of the adhesive substrate to the target object CP, thereby enabling the target object CP to be transferred from the adhesive substrate to the second substrate SUB2.

[0106] In some embodiments, a bonding layer may be provided on the surface of the second substrate SUB2 that contacts the target object CP. The bonding layer may be made of a heat-curable material, such as conductive silver paste. In step S150, the carrier 110 heats the second substrate SUB2 while the target object CP is placed on the second substrate SUB2 to cure the bonding layer in contact with the target object CP, thereby improving the adhesion of the target object CP to the second substrate SUB2.

[0107] In some embodiments, the second substrate SUB2, serving as the array substrate, may be provided with microporous structures corresponding to the respective objects. In step S150, when the objects CP are placed on the second substrate SUB2, the carrier 110 extracts air from the microporous structures to establish a vacuum between the second substrate SUB2 and the respective objects CP, thereby enhancing the adhesion of the objects CP to the second substrate SUB2. This structural configuration will be further described in the subsequent embodiments of the array substrate.

[0108] In some embodiments, the second substrate SUB2, serving as the array substrate, includes a magnetic structure. The magnetic structure can be controlled to generate a magnetic force in a specific direction, so that the target object CP falls into the slots of the array substrate in the same direction in response to the magnetic force. This structural configuration will be further described in subsequent embodiments of the array substrate.

[0109] FIG1B is a schematic diagram of a mass transfer apparatus according to another embodiment of the present disclosure. Referring to FIG1B , the mass transfer apparatus 100 ′ of this embodiment is substantially identical to the mass transfer apparatus 100 of the embodiment of FIG1A , including a carrier 110 , a pick-and-place unit 120 , a detection unit 130 , and a control unit 140 . The description of each component can be found in the embodiment of FIG1A , and will not be repeated here.

[0110] The main difference between this embodiment and the aforementioned embodiment is that the mass transfer device 100' of this embodiment may include one or more intermediate transfer processes in the process of transferring the target object CP on the first substrate SUB1 to the second substrate SUB2. For example, the mass transfer device 100' of this embodiment may first use the pick-and-place unit 120 to transfer the target object CP of the source substrate to the alignment substrate for alignment, and then transfer the aligned target object CP to the redirection substrate. After the target object CP is redirected by the redirection substrate, the target object CP is transferred from the redirection substrate to the target substrate. In other words, in this embodiment, the predetermined direction in which the target object CP is arranged on the alignment substrate is opposite to the predetermined direction in which the target object CP is arranged on the redirection substrate. For example, the target object CP may have a first side and a second side opposite the first side. The predetermined orientation of the target object CP within the array of substrates may be, for example, with the first side facing upward and the second side facing the bottom surface of the slots within the array of substrates. The predetermined orientation of the target object CP within the redirection substrate may be, for example, with the second side facing upward and the first side facing the redirection substrate body. However, the present disclosure is not limited thereto.

[0111] The mass transfer device 100' can be operated by a mass transfer method as shown in FIG2B, wherein FIG2B is a flow chart of the steps of the mass transfer method of another embodiment of the present disclosure. Please refer to FIG1B and FIG2B simultaneously. The mass transfer method of this embodiment includes: performing position detection on the first substrate SUB1 / the redirected substrate SUBm / the second substrate SUB2 to obtain relative position information PDT (step S210); adjusting the relative position of the pick-and-place unit 120 and the carrier unit 110 according to the relative position information PDT (step S220); controlling the pick-and-place unit 120 to obtain the target object CP from the first substrate SUB1 (step S230); controlling the pick-and-place unit 120 to place the obtained target object CP on the redirected substrate SUBm (step S240). S240); moving and flipping the redirecting substrate SUBm so that the target object CP faces the supporting portion (step S250); controlling the pick-and-place portion 120 to move the redirecting substrate SUBm toward the second substrate SUB2 and causing the target object CP to contact the second substrate SUB2 (step S260); outputting energy so that the adhesion force of the target object CP to the second substrate SUB2 is greater than the adhesion force of the target object CP to the redirecting substrate SUBm (step S270); and removing the redirecting substrate SUBm to separate the redirecting substrate SUBm from the target object CP (step S280).

[0112] Specifically, steps S210 to S230 described above can refer to steps S110 to S140 of the embodiment of FIG. 2A , and are not repeated here. In this embodiment, the first substrate SUB1 can be, for example, a column substrate for adjusting the arrangement of the target objects CP, and the second substrate can be, for example, a target substrate for carrying the transferred target objects CP, and the target objects CP can be, for example, LED chips.

[0113] In step S240, the control unit 140 controls the pick-and-place unit 120 to move toward the adhesive redirecting substrate SUBm on the carrier 110, and brings the target object CP into contact with the redirecting substrate SUBm. In this embodiment, the side of the redirecting substrate SUBm used to place the target object CP may have a certain adhesive strength, and the adhesive strength of the redirecting substrate SUBm may be greater than the adhesive strength of the adhesive substrate 223. When the target object CP is placed on the redirecting substrate SUBm and the adhesive substrate 223 is moved away, the target object CP is removed from the adhesive substrate 223 and remains on the redirecting substrate SUBm.

[0114] In step S250 , the mass transfer apparatus 100 ′ may control the pick-and-place unit 120 through the control unit 140 to flip the redirected substrate SUBm, or may use other components to do so, and the present disclosure is not limited thereto.

[0115] In step S260, the control unit 140 further controls the redirecting substrate SUBm to move the side carrying the target object CP toward the second substrate SUB2 on the supporting unit 110, so that the target object CP contacts the second substrate SUB2. When the target object CP is placed on the second substrate SUB2, in step S270, the control unit 110 further controls the supporting unit 110 to output energy to the second substrate SUB2. The output energy acts on the redirecting substrate SUBm and / or the second substrate SUB2, thereby increasing the adhesion of the second substrate SUB2 to the target object CP and / or reducing the adhesion of the redirecting substrate SUBm to the target object CP, thereby allowing the target object CP to be transferred from the redirecting substrate SUBm to the second substrate SUB2.

[0116] In step S280, the control unit further controls the pick-and-place unit 120 to remove the redirecting substrate SUBm, thereby separating the redirecting substrate SUBm from the target object CP. After the target object CP is transferred to the second substrate SUB2, the redirecting substrate SUBm is separated from the target object CP attached to the second substrate SUB2 by moving the redirecting substrate SUBm away from the second substrate SUB2.

[0117] Compared to the mass transfer process of FIG. 1A , this embodiment can further optimize the arrangement and / or configuration direction of the target objects CP to a state suitable for transfer, thereby improving the transfer yield and efficiency.

[0118] Specific implementation examples of a mass transfer device are described below using the structures of Figures 3A to 3C , where Figures 3A to 3C are schematic diagrams of the configurations of mass transfer devices according to various embodiments of the present disclosure. Referring first to Figure 3A , the mass transfer device 200 of this embodiment includes a carrier 210, a pick-and-place unit 220, a detection unit 230, and a control unit 240. The carrier 210 includes a first motion control mechanism 211, a carrier platform 212, and a heating assembly 213; and the pick-and-place unit 220 includes a second motion control mechanism 221, a clamping mechanism 222, and an adhesive substrate 223. The detection unit 230 of this embodiment includes a CCD sensor, and the target object CP to be transferred is, for example, an LED chip (hereinafter referred to as "LED chip CP"), but the present disclosure is not limited thereto.

[0119] Specifically, in the carrying portion 210, a carrying platform 212 is disposed on the first movement control mechanism 211 and is used to carry a substrate SUB (which may be a substrate to be transferred or a target substrate). Although the figures illustrate only a single carrying platform 212 as an example, the present disclosure is not limited thereto. In some embodiments, the carrying portion 210 may also include multiple carrying platforms, each for carrying a substrate to be transferred (such as the aforementioned first substrate SUB1 or the redirected substrate SUBm) and a target substrate (such as the aforementioned second substrate SUB2). This will be further described in subsequent embodiments.

[0120] The first movement control mechanism 211 can be controlled by the control unit 240 or manually to drive the carrier platform 212 to move (translationally or rotationally) in the xz plane. The heating assembly 213 contacts the carrier platform 212 and is controlled by the control unit 240 to heat the carrier platform 212 so that heat can be transferred from the carrier platform 212 to the substrate SUB.

[0121] In the pick-and-place portion 220, the clamping mechanism 222 is arranged on the second movement control mechanism 221 and is used to fix the adhesive substrate 223 so that the adhesive substrate 223 and the carrying platform 212 are roughly parallel. The clamping mechanism 222 fixes the adhesive substrate 223 by using a specific structural configuration to engage the adhesive substrate 223, or by using adsorption or adhesion to fix the adhesive substrate 223 on the clamping mechanism 222.

[0122] The second movement control mechanism 221 can be arranged on the same xz plane as the first movement control mechanism 211 and can be controlled by the control unit 240 or manually to drive the clamping mechanism 222 and the adhesive substrate 223 to move on the xz plane. In other words, by controlling the first movement control mechanism 211 and the second movement control mechanism 221, the substrate SUB and the adhesive substrate 223 can be relatively displaced.

[0123] The clamping mechanism 222 can also be moved along the y-axis perpendicular to the xz plane by the control unit 240 or manually controlled, so that the adhesive substrate 223 can be moved closer to or away from the carrying platform 212. In other words, the clamping mechanism 222 can control the movement of the adhesive substrate in three directions through the configuration of the second movement control mechanism 221 and the clamping mechanism 222.

[0124] The adhesive substrate 223 may include a rigid layer and an adhesive layer disposed on one side of the rigid layer. The rigid layer may be, for example, a glass substrate, and the adhesive layer may be, for example, a polydimethylsiloxane (PDMS) film. Furthermore, the adhesive layer of the adhesive substrate 223 may be configured as a comb-like structure (i.e., having protrusions arranged at regular intervals) as shown in FIG. 3A , where the protrusions are configured to contact the LED chips CP on the substrate SUB. However, the adhesive substrate 223 of the present disclosure is not limited to this structure.

[0125] The CCD sensor of the detection unit 230 is configured to capture images facing the carrier platform 212 so that when the substrate SUB is placed on the carrier platform 212, it is within the image sensing range of the CCD sensor. The image information captured by the CCD sensor is transmitted to the control unit 240 as relative position information PDT.

[0126] In some embodiments, the mass transfer apparatus 100 / 200 may further include an alignment unit, exemplified by the alignment unit 250 shown in FIG3A . The alignment unit 250 may be disposed on the carrier 210 to apply force to the substrate SUB and the LED chips CP on the substrate SUB, thereby aligning the LED chips CP to corresponding positions on the substrate SUB. In this embodiment, the alignment unit 250 may be disposed at the bottom of the carrier platform 212, and when the alignment unit 250 is in operation, the force is applied to the substrate SUB via the carrier platform 212, but the present disclosure is not limited thereto.

[0127] Specifically, when the entire array of substrates is placed on the supporting platform 212, the LED chips CP may be scattered on the entire array of substrates and not fall into the corresponding slots. In this case, the array action part 250 can provide a force to make the LED chips CP fall into the corresponding slots. The force provided by the array action part 250 can be, for example, vibration, vacuum suction, etc. For example, in the example where the array action part 250 provides vibration as the force, the array action part 250 can be, for example, a plurality of vibration mechanisms (such as voice coil motors), which can provide multi-dimensional vibration force to make the LED chips CP scattered on the entire array of substrates fall into the slots.

[0128] In some embodiments, the entire array action portion 250 may, for example, include at least three vibration mechanisms, wherein one of the three vibration mechanisms causes vibration in a first direction, another of the three vibration mechanisms causes vibration in a second direction, and the remaining vibration mechanisms cause vibration in a third direction. Any of the first to third directions may be roughly parallel to the normal direction of the plane formed by the remaining two directions. For example, the three vibration mechanisms may be, for example, a first vibration mechanism (not shown), a second vibration mechanism (not shown), and a third vibration mechanism (not shown), wherein the first vibration mechanism causes up and down vibration, the second vibration mechanism causes left and right vibration, and the third vibration mechanism causes front and back vibration. In this way, the LED chip CP can be more easily shaken into the slot of the entire array substrate through multi-dimensional vibration.

[0129] In some embodiments, the supporting platform 212 may also be provided with a plurality of grooves connected to the array action part 250, wherein the array action part 250 can adsorb the substrate SUB and / or the LED chip CP on the substrate SUB onto the supporting platform 212 by vacuuming the grooves of the supporting platform 212.

[0130] In some embodiments, the alignment function unit 250 may include an electromagnetic control module (not shown), which can be used to supply power to the electromagnetic generating components in the alignment substrate, so that during the alignment process, each slot of the alignment substrate generates a directional magnetic force, thereby causing the LED chips CP provided with magnetic components to fall into the slots of the alignment substrate in the same direction.

[0131] Figures 3B and 3C illustrate specific implementation examples of mass transfer devices according to other embodiments of the present disclosure, wherein Figure 3B is a top view of the mass transfer device 300, and Figure 3C is a partial side view of the mass transfer device 300. Referring to Figures 3B and 3C together, the mass transfer device 300 of this embodiment includes a carrying portion 310, a pick-and-place portion 320, a detection portion 330, and a control portion (not shown). The carrying portion 310 includes a plurality of carrying platforms 312a-312d; the pick-and-place portion 320 includes a multi-axis motion control mechanism 321, a clamping mechanism 322, and an adhesive substrate 323; and the detection portion 330 includes a CCD sensor 331.

[0132] Specifically, in the carrying portion 310 , the carrying platforms 312 a - 312 d are fixedly mounted on a base and are used to carry substrates to be transferred (such as the aforementioned first substrate SUB1 or redirected substrate SUBm) and target substrates (such as the aforementioned second substrate SUB2 ).

[0133] In the pick-and-place portion 320, the clamping mechanism 322 is arranged on the multi-axis movement control mechanism 321, and is used to fix the adhesive substrate 323 so that the adhesive substrate 323 and the supporting platforms 312a~312d are roughly parallel. The clamping mechanism 322 fixes the adhesive substrate 323 by using a specific structural configuration to engage the adhesive substrate 323, or by using adsorption or adhesion to fix the adhesive substrate 323 on the clamping mechanism 322.

[0134] The multi-axis motion control mechanism 321 can be configured on a base (which can be the same as or different from the supporting platforms 312a-312d) and can respond to displacement information from the control unit to drive the clamping mechanism 322 and the adhesive substrate 323 to move in three-dimensional space. In other words, in addition to being able to move in the xz plane, the multi-axis motion control mechanism 321 can also move on the y-axis, which is perpendicular to the xz plane. Compared to the second motion control mechanism 221 of the pick-and-place unit 220 in Figure 3A, the multi-axis motion control mechanism 321 can move between any coordinates in the three-dimensional coordinate system. That is, when it moves, it can drive the clamping mechanism 322 to move and position along a non-linear trajectory.

[0135] In other words, the adhesive substrate 323 driven by the clamping mechanism 322 can be displaced linearly between any coordinate points in three-dimensional space, without being restricted to first displacing on the xz plane and then on the y axis, which can further shorten the placement time.

[0136] On the other hand, the multi-axis motion control mechanism 321 can be moved arbitrarily on the three-dimensional coordinate points, so it is easier to adjust / correct the tilt angle of the clamping mechanism 322 and the adhesive substrate 323, so that the pick-and-place unit 320 can have a better pick-and-place success rate when picking and placing.

[0137] The configuration of the adhesive substrate 323 is similar to the adhesive substrate 223 in the embodiment of FIG. 3A , so the relevant parts may refer to the contents of the above embodiment and will not be repeated here.

[0138] In the detection part 330, the CCD sensor 331 will be configured to face the direction of the carrying part 310, so that the multi-axis movement control mechanism 321 can capture images of the substrates configured on the carrying platforms 312a~312d when it moves to the corresponding carrying platforms 312a~312d, and the image information captured by the CCD sensor 331 will be transmitted to the control part as relative position information, so that the control part controls the multi-axis movement control mechanism 321 based on the relative position information to drive the clamping mechanism 322 and the adhesive substrate 323 to align the substrates on the carrying platforms 312a~312d, and perform the pick-up and placement action after the alignment is completed.

[0139] In some embodiments, the substrates disposed on the carrying platforms 312a to 312d may be provided with alignment marks, and the multi-axis motion control mechanism 321 may drive the clamping mechanism 322 and the adhesive substrate 323 to move to positions aligned with the alignment marks, so that the adhesive substrate 323 and the substrate positions are aligned.

[0140] In some embodiments, the detection unit 330 may also include a height sensor 332, which can be used to sense the distance between the clamping mechanism 322 / adhesive substrate 323 and the supporting platform 312a~312d or the substrate thereon, and transmit the distance information to the control unit, so that the control unit can control the displacement of the multi-axis motion control mechanism 321 on the z-axis based on the distance information, thereby achieving higher precision pick-and-place actions.

[0141] In some embodiments, the mass transfer device 300 may also include an alignment unit (not shown) as in the aforementioned embodiment. The alignment unit may be disposed on one or more of the supporting platforms 312a-312d and applies a force to the substrate and its LED chips CP on the corresponding supporting platforms 312a-312d to neatly align the LED chips CP to corresponding positions on the substrate. For details regarding the alignment unit, please refer to the aforementioned embodiment and will not be repeated here.

[0142] In this embodiment, the substrates disposed on the carrying platforms 312 a - 312 d may be, for example, a source substrate, an alignment substrate, a redirection substrate, and a target substrate, respectively.

[0143] The specific structure of adhesive substrate 223 is further described below. During mass transfer, the use of the adhesive substrate 223 structure disclosed herein can improve the success rate of picking and placing LED chips CP. Figure 4A is a cross-sectional schematic diagram of the adhesive substrate structure according to an embodiment of the present disclosure, and Figure 4B is a side schematic diagram of the adhesive substrate structure according to an embodiment of the present disclosure. Referring to Figures 4A and 4B , the adhesive substrate 223 according to this embodiment includes a rigid layer 2231 and an adhesive layer 2232.

[0144] The adhesive layer 2232 includes one or more first protruding structures PS1 and second protruding structures PS2, wherein the first protruding structure PS1 is used to contact the LED chip through its cross-section S1, and the second protruding structure PS2 is used to support the first protruding structure PS1 through its cross-section S2. Specifically, the second protruding structure PS2 is arranged in an array on the rigid layer 2231, and the first protruding structure PS1 is arranged on the second protruding structure PS2. The shapes of the first protruding structure PS1 and the second protruding structure PS2 can be a cuboid, a cylinder or a triangle. The shapes of the first protruding structure PS1 and the second protruding structure PS2 can be the same or different, and the present disclosure is not limited thereto. In this embodiment, the area of ​​the cross-section S1 of the first protruding structure PS1 will be smaller than the area of ​​the cross-section S2 of the second protruding structure PS2. In some embodiments, the area of ​​the cross-section S1 of the first protruding structure PS1 may be, for example, between 9 μm 2 to 2025μm 2 , and the cross-sectional area S2 of the second protruding structure PS2 may be, for example, between 100 μm 2 Up to 22500μm 2 , but the present disclosure is not limited thereto. In addition, those skilled in the art will understand that the selection of the cross-sectional area of ​​the first / second protrusion structure illustrated above will only be achieved in a reasonable manner in different embodiments. For example, if the cross-sectional area S1 of the first protrusion structure PS1 is 2000 μm 2 , then those skilled in the art will understand that the cross-sectional area S2 of the second protruding structure PS2 will only be greater than 2000 μm 2 The range is not between 100μm 2 Up to 2000μm 2 between.

[0145] In some embodiments, the adhesive layer 2232 may also include only the first protruding structure PS1, and the first protruding structure PS1 is directly disposed on the rigid layer 2231. In some embodiments, the adhesive layer 2232 may also have a seal hollow structure, which is not limited in the present disclosure.

[0146] Taking the protruding structures as cylindrical, for example, the cross-sectional shape S1 of the first protruding structure PS1 and the cross-sectional shape S2 of the second protruding structure PS2 are circular. The cross-sectional shape S2 of the second protruding structure PS2 is used to position one or more first protruding structures PS1. The cross-sectional shape S1 of the first protruding structure PS1 is used to contact the LED chip CP for placement and removal of the LED chip CP. To ensure that the first protruding structures PS1 can be positioned on the second protruding structure PS2, the cross-sectional area S1 of each first protruding structure PS1 is smaller than the cross-sectional area S2 of the second protruding structure PS2. Moreover, the sum of the cross-sectional areas S1 of multiple first protruding structures PS1 positioned on the same second protruding structure PS2 is also smaller than the cross-sectional area S2 of the second protruding structure PS2. In FIG4B , four cylindrical first protruding structures PS1 are positioned on a single cylindrical second protruding structure PS2. However, the shape, number, and arrangement of the first and second protruding structures PS1 and PS2 are not intended to limit the present disclosure. The first protrusion structure PS1 reduces the contact area between the adhesive layer 2232 and the LED chip CP, allowing for successful pickup of the LED chip CP and smooth release of the LED chip CP to the target substrate. Therefore, using the adhesive substrate 223 structure disclosed herein can improve the success rate of picking and placing LED chips CP during mass transfer.

[0147] The method for making the adhesive substrate 223 is, for example, to first prepare a silicon disc mold, then inject a silicone stock solution into the mold to solidify it into a film, and finally demold and cut it. The mold uses an etching method to etch small holes corresponding to the LED chips CP that need to be transferred on the flat silicon disc. In some embodiments, the precision error of the mold can be less than ±2μm to ensure that the film-forming adhesive layer 2232 corresponds to the actual arrangement position of the LED chip CP. During the film making process, the film thickness can be controlled to control costs by controlling parameters such as the stock solution ratio, vacuum pressure, and temperature. In addition, the position of the adhesive layer 2232 can be kept from shifting according to the film shrinkage law. During the demolding process, the integrity of the silicon disc mold can be ensured while the adhesive layer 2232 is successfully peeled off from the silicon disc mold one by one, without causing damage to the mold. The above-mentioned manufacturing method is not intended to limit the present disclosure.

[0148] Figures 5A through 5C illustrate the process of transferring LED chips CP from a material carrier tray to a target substrate using adhesive substrate 223 during a mass transfer process. Referring to Figures 5A through 5C, the material carrier tray can be, for example, a source substrate. Figure 5A illustrates the steps before adhesive substrate 223 picks up an LED chip CP. Figure 5B illustrates the steps after adhesive substrate 223 picks up an LED chip CP. Figure 5C illustrates the steps after adhesive substrate 223 releases the LED chip CP.

[0149] In FIG5A , the adhesive layer 2232 (e.g., an elastic stamp transfer head) prepared on the rigid layer 2231 corresponds one-to-one with the LED chip CP to ensure positioning accuracy, and then utilizes the flexibility of the adhesive layer 2232 in the vertical direction (e.g., the Z axis) to ensure that each LED chip CP is picked up and transferred during the pressing process. The adhesive layer 2232 is not a plane, but has multiple protruding first protruding structures PS1. In FIG5B , when the adhesive layer 2232 contacts the LED chip CP and applies a certain force, the top plane of the first protruding structure PS1 (i.e., the cross-section S1) contacts the LED chip CP and is compressed in response to the force (i.e., the top collapses), thereby allowing the adhesive force of the adhesive layer 2232 to fully act on the LED chip CP and pick up the LED chip CP. When the LED chip CP is placed on the adhesive layer 2232, the first protrusions PS1 on the adhesive layer 2232 will recover their deformation after a period of time. At this point, only the top of the first protrusions PS1 is in contact with the LED chip CP, resulting in a relatively small force between the adhesive layer 2232 and the LED chip CP. In Figure 5C , the LED chip CP is again placed in contact with the target substrate and then slowly removed, successfully transferring the LED chip CP to the target substrate. Therefore, using the adhesive substrate 223 structure disclosed herein can improve the success rate of placing and removing LED chips CP during mass transfer.

[0150] The following describes the specific processes for operating the mass transfer apparatus 200 / 300 to perform mass transfer in various embodiments, using Figures 6A to 6F, 7A to 7L, 8A to 8K, and 9A to 9G. Figures 6A to 6F illustrate the operation of the mass transfer apparatus 200 / 300 to transfer LED chips directly from a source substrate to a target substrate. Figures 7A to 7L and 8A to 8K illustrate the operation of the mass transfer apparatus 200 / 300 to transfer LED chips from a source substrate to an array of substrates, and then to transfer the LED chips on the array of substrates to a target substrate. Figures 9A to 9G illustrate the operation of the mass transfer apparatus 200 to transfer LED chips from an array of substrates to a redirecting substrate, and then to transfer the LED chips on the redirecting substrate to a target substrate. For ease of explanation, the following embodiments will primarily describe the mass transfer apparatus 200 of Figure 3A, but the present disclosure is not limited thereto.

[0151] Please first refer to Figure 3A and Figures 6A to 6F, where Figures 6A to 6F are schematic diagrams of the process flow of mass transfer performed by the mass transfer device of some embodiments of the present disclosure. As shown in Figure 6A, the source substrate SUBs of this embodiment is configured with a 3×3 array of slots CAV as an example (but the present disclosure is not limited to this), wherein each slot CAV can accommodate one LED chip CP. In other words, the LED chips CP will be arranged in a 3×3 array on the source substrate SUBs. On the other hand, the comb-shaped protrusion structure on the adhesive substrate 223 will also be arranged in a 3×3 array corresponding to the slots CAV.

[0152] When the mass transfer device 200 begins operation, the carrier unit 210 and the pick-and-place unit 220 perform pre-alignment to determine the horizontal displacement W1 between the protrusions on the adhesive substrate 223 and the corresponding slots CAV in the xz plane, as well as the vertical spacing L1 between the adhesive substrate 223 and the source substrate SUBs on the y-axis. This determination of the horizontal displacement W1 is achieved by detecting alignment marks on the source substrate SUBs and adhesive substrate 223 using the CCD sensor of the detection unit 230. The vertical spacing L1 is determined by moving the adhesive substrate 223 to a redundant area of ​​the source substrate SUBs and controlling the clamping mechanism 222 to move the adhesive substrate 223 toward the redundant area of ​​the source substrate SUBs until it contacts the redundant area. The recorded movement data is then used to calculate the vertical spacing L1 between the source substrate SUBs and adhesive substrate 223 on the y-axis.

[0153] After obtaining relative position information such as the horizontal displacement W1 and the vertical distance L1, as shown in FIG6B , the source substrate SUBs and the adhesive substrate 223 are relatively moved to a position where the LED chips CP are aligned with the corresponding protrusions on the adhesive substrate 223. Next, as shown in FIG6C , the adhesive substrate 223 is moved toward the source substrate SUBs based on the detected vertical distance L1 so that the protrusions contact the corresponding LED chips CP.

[0154] At this time, the adhesive force of the adhesive substrate 223 acts on the LED chips CP, causing the LED chips CP to adhere to the adhesive substrate 223 and, when the adhesive substrate 223 moves away from the source substrate SUBs, removes the LED chips CP from the source substrate SUBs. In other words, the LED chips CP on the source substrate SUBs are transferred to the adhesive substrate 223.

[0155] As shown in FIG6D , the position of the adhesive substrate 223 is recalibrated to align with the target substrate SUBt. The calibration process can be similar to the pre-alignment process described in FIG6A and FIG6B , but the present disclosure is not limited thereto. In this embodiment, the target substrate SUBt includes, for example, a support layer SL and a bonding layer BL disposed on the support layer SL. The bonding layer BL can be made of a heat-curable material, such as conductive silver paste. When the target substrate SUBt is placed on the carrier platform 212, the bonding layer BL is located on the side closest to the adhesive substrate 223.

[0156] In some embodiments, the control unit 240 can also calculate the vertical distance L2 based on previously pre-aligned data based on input parameters of the target substrate SUBt. For example, the user can pre-enter the thickness of the LED chip CP and the bonding layer BL. Therefore, when performing alignment correction between the adhesive substrate 223 and the target substrate SUBt, the displacement of the adhesive substrate 223 (equal to vertical distance L1 - LED chip thickness - bonding layer BL thickness) can be calculated based on the pre-aligned vertical distance L1 and the thickness of the LED chip CP and bonding layer BL, i.e., the vertical distance L2.

[0157] As shown in Figure 6E , once the position of the adhesive substrate 223 has been adjusted, the clamping mechanism 222 moves the adhesive substrate 223 toward the target substrate SUBt, allowing the LED chip CP to contact the bonding layer BL of the target substrate SUBt. After the LED chip CP contacts the target substrate SUBt, the heating assembly 213 is activated to heat the target substrate SUBt via the carrier platform 212. The heated bonding layer BL gradually solidifies, increasing the adhesion of the LED chip CP to the target substrate SUBt.

[0158] After a set heating period, the clamping mechanism 222 drives the adhesive substrate 223 to move away from the target substrate SUBt, as shown in FIG6F . At this point, because the LED chip CP has a stronger adhesion to the target substrate SUBt than to the adhesive substrate 223, the LED chip CP is released from the adhesive substrate 223 and transferred to the target substrate SUBt, completing the transfer process.

[0159] In some embodiments, the heating temperature set by the heating component 213 may be, for example, 120° C., and the set heating time may be, for example, 30 minutes, but the present disclosure is not limited thereto.

[0160] Through the above-mentioned mass transfer process, the mass transfer apparatus 200 can use the adhesive substrate 223 to transfer all LED chips CP on the source substrate SUBt to the target substrate SUBt at one time, thereby effectively improving the efficiency of mass transfer.

[0161] Please refer to Figures 3A and 7A to 7L, where Figures 7A to 7L are schematic diagrams of the mass transfer process performed by the mass transfer apparatus according to other embodiments of the present disclosure. The primary difference between this embodiment and the aforementioned embodiment of Figures 6A to 6F is that the mass transfer apparatus 200 in this implementation first transfers the LED chips CP from the source substrate SUBs to a row of substrates SUBa corresponding in size to the target substrate SUBt, and then transfers all of the LED chips CP from the row of substrates SUBa to the target substrate SUBt at once. This allows the LED chips CP to be transferred from the smaller source substrates SUBs to the larger target substrate SUBt.

[0162] Specifically, in this embodiment, the placement unit 220 includes a plurality of replaceable adhesive substrates 223_1 and 223_2, wherein the adhesive substrate 223_1 is used to transfer the LED chip CP between the source substrate SUBs and the entire array substrate SUBa, and the adhesive substrate 223_2 is used to transfer the LED chip CP between the entire array substrate SUBa and the target substrate SUBt.

[0163] As shown in Figure 7A , the source substrate SUBs of this embodiment is configured with a 5×3 array of slots CAV1 (although the present disclosure is not limited thereto). Each slot CAV1 can accommodate a single LED chip CP. In other words, the LED chips CP are arranged in a 5×3 array on the source substrate SUBs. Meanwhile, the comb-shaped protrusions on the first adhesive substrate 223_1 corresponding to the source substrate SUBs are arranged in a 3×3 array.

[0164] When the mass transfer apparatus 200 begins operation, the carrier unit 210 and the pick-and-place unit 220 perform pre-alignment to determine the horizontal displacement W1 between the protrusion on the first adhesive substrate 223_1 and the corresponding groove CAV1 in the xz plane, as well as the vertical distance L1 between the adhesive substrate 223 and the source substrate SUBs on the y-axis. This determination of the horizontal displacement W1 is achieved by detecting alignment marks on the source substrate SUBs and the first adhesive substrate 223_1 using a CCD sensor in the detection unit 230. The vertical distance L1 is determined by moving the first adhesive substrate 223_1 to a redundant area of ​​the source substrate SUBs and controlling the clamping mechanism 222 to move the first adhesive substrate 223_1 toward the redundant area of ​​the source substrate SUBs until it contacts the redundant area. The recorded movement data is then used to calculate the vertical distance L1 between the source substrate SUBs and the first adhesive substrate 223_1 on the y-axis.

[0165] After obtaining relative position information such as the horizontal displacement W1 and the vertical distance L1, as shown in FIG7B , the source substrate SUBs and the first adhesive substrate 223_1 are relatively moved to a position where the LED chips CP are aligned with the corresponding protrusions on the adhesive substrate 223. Next, as shown in FIG7C , the first adhesive substrate 223_1 is moved toward the source substrate SUBs based on the detected vertical distance L1 so that the protrusions contact the corresponding LED chips CP.

[0166] At this point, as shown in FIG7D , the adhesive force of the first adhesive substrate 223_1 acts on some of the LED chips CP on the source substrate SUBs, causing the LED chips CP contacting the first adhesive substrate 223_1 to adhere to the adhesive substrate 223. As the first adhesive substrate 223_1 moves away from the source substrate SUBs, these LED chips CP are removed from the source substrate SUBs. In other words, some of the LED chips CP on the source substrate SUBs are transferred to the first adhesive substrate 223_1.

[0167] Next, as shown in Figures 7E and 7F , the first adhesive substrate 223_1 is repositioned to align with the array substrate SUBa and moved toward the array substrate SUBa to place the LED chips CP in the corresponding slots CAV2 of the array substrate SUBa. In this embodiment, the array substrate SUBa is configured with a 9×9 array of slots CAV2. Each slot CAV2 can accommodate a single LED chip CP, but the present disclosure is not limited to this configuration. Figure 7F illustrates the first adhesive substrate 223_1 placing LED chips CP arranged in a 3×3 array in the 3×3 empty slots in the upper left corner of the array substrate SUBa.

[0168] In this embodiment, the carrier 210 applies a suction or adhesive force to the slots CAV2 where the LED chips CP are placed, so that the adhesion of the LED chips CP to the entire array of substrates SUBa is greater than the adhesion of the LED chips CP to the first adhesive substrate 223_1. The first adhesive substrate 223_1 then moves away from the entire array of substrates SUBa, and the LED chips CP originally located on the first adhesive substrate 223_1 are transferred to the corresponding slots CAV2 of the entire array of substrates SUBa.

[0169] Next, the mass transfer device 200 repeats the operations of Figures 7A to 7F to transfer the LED chips CP on multiple source substrates SUBs to the empty slots CAV2 of the entire column substrate SUBa one by one until all the slots CAV2 of the entire column substrate SUBa are filled with LED chips CP, as shown in Figure 7G.

[0170] After all the LED chips CP are transferred to the entire array substrate SUBa, the first adhesive substrate 223_1 of the placement portion 220 is replaced with a second adhesive substrate 223_2 having a comb-shaped protrusion structure arranged in a 9×9 array, and a step process similar to that of Figures 7A to 7D above is performed to transfer all the LED chips CP on the entire array substrate SUBa to the second adhesive substrate 223_2, as shown in Figure 7I.

[0171] Next, as shown in FIG7J , the position of the second adhesive substrate 223_2 is recalibrated to align with the target substrate SUBt. The calibration process can be similar to the pre-alignment process described in FIG6A and FIG6B , but the present disclosure is not limited thereto. In this embodiment, the configuration of the target substrate SUBt is similar to that of the previous embodiment, differing only in size, and a detailed description thereof will not be repeated here.

[0172] As shown in Figure 7K , once the position of the second adhesive substrate 223_2 has been adjusted, the clamping mechanism 222 moves the second adhesive substrate 223_2 toward the target substrate SUBt, allowing the LED chip CP to contact the bonding layer BL of the target substrate SUBt. After the LED chip CP contacts the target substrate SUBt, the heating assembly 213 is activated to heat the target substrate SUBt via the carrier platform 212. The heated bonding layer BL gradually solidifies, increasing the adhesion of the LED chip CP to the target substrate SUBt.

[0173] After a set heating period, the clamping mechanism 222 moves the second adhesive substrate 223_2 away from the target substrate SUBt, as shown in FIG7L . At this point, because the LED chip CP has a stronger adhesion to the target substrate SUBt than to the second adhesive substrate 223_2, the LED chip CP detaches from the second adhesive substrate 223_2 and is transferred and fixed to the target substrate SUBt, completing the transfer process.

[0174] Please refer to Figures 3A and 8A to 8K , where Figures 8A to 8K are schematic diagrams illustrating a mass transfer process performed by a mass transfer apparatus according to another embodiment of the present disclosure. The primary difference between this embodiment and the aforementioned embodiment of Figures 7A to 7L is that the array of substrates SUBa in this embodiment has a different array structure and operational process to optimize transfer reliability between the source substrates SUBs / target substrates SUBt and the array of substrates SUBa.

[0175] Specifically, in this embodiment, the LED chip CP is designed to have a trapezoidal cross-section, narrow at the top and wide at the bottom. For example, the electrodes of the LED chip CP are positioned at the top and bottom, but this disclosure is not limited to this. Furthermore, the alignment substrate used in the transfer process of this embodiment includes a primary alignment substrate SUBa for aligning the LED chips CP, and a secondary alignment substrate SUBa' for inspection, repair, and precise alignment.

[0176] As shown in FIG8A , the array substrate SUBa of this embodiment is configured with a 3×3 array of slots CAV1 as an example (but the present disclosure is not limited thereto), wherein the shape of each slot CAV1 corresponds to the design of an LED chip CP having a trapezoidal cross-section structure to accommodate one LED chip CP. Before the mass transfer device 200 begins operation, the LED chips CP may be placed upside down on the array substrate SUBa in a scattered manner. In this case, the LED chips CP will not fall neatly into the slots CAV1 of the array substrate SUBa. When the mass transfer device 200 begins operation, the array action portion 250 generates a force or controls the array substrate SUBa to generate a force, so that the LED chips CP fall into the slots CAV1 in response to the force.

[0177] In some embodiments, the alignment portion 250 generates vibration as a force to drive the supporting platform 212 and the alignment substrate SUBa, thereby causing the LED chips CP to fall into the slots CAV1 in response to the vibration.

[0178] In some embodiments, the alignment substrate SUBa further includes an electromagnetic generating component (e.g., an electromagnet), and each LED chip CP is provided with a magnetic component. During LED chip alignment, the alignment unit 250 provides power to the electromagnetic generating component in the alignment substrate SUBa to generate a magnetic force. This force causes the magnetic components on the LED chips CP to fall into the same direction into the slots CAV1.

[0179] In some embodiments, because the slots CAV1 of the entire array of substrates SUBa are designed as an inverted trapezoidal structure (as shown in FIG8A ), narrow at the bottom and wide at the top, corresponding to the size of the LED chips CP, the LED chips CP, when falling into the slots CAV1 in response to vibration, will only fall into the slots CAV1 with the bottom facing downward. Furthermore, in some embodiments, by providing a magnetic structure on the entire array of substrates SUBa, the directional characteristics of the magnetic force can be used to ensure that the LED chips CP fall into the entire array of substrates SUBa in the same direction.

[0180] Then, as shown in Figures 8B and 8C, after the supporting part 210 and the pick-up and placement part 220 complete the pre-alignment (the specific process refers to the aforementioned embodiment and will not be repeated here), the entire column substrate SUBa and the adhesive substrate 223 will be moved relative to each other to align the LED chip CP with the corresponding protrusion on the adhesive substrate 223, and the adhesive substrate 223 will move toward the entire column substrate SUBa based on the detected vertical spacing so that the protrusion contacts the corresponding LED chip CP.

[0181] At this point, the adhesive force of the adhesive substrate 223 acts on the LED chips CP on the entire array of substrates SUBa, causing the LED chips CP in contact with the adhesive substrate 223 to adhere to the adhesive substrate 223. As the adhesive substrate 223 moves away from the entire array of substrates SUBa, the LED chips CP are carried away from the entire array of substrates SUBa. In other words, the LED chips CP on the entire array of substrates SUBa are transferred to the adhesive substrate 223. The position of the adhesive substrate 223 is then realigned to align with the entire array of substrates SUBa', as shown in FIG8D .

[0182] In this embodiment, the entire array of substrates SUBa' can be designed, for example, with a corresponding microporous structure VH at the bottom of each slot CAV2. The supporting platform 212 has vacuum channels 2122 corresponding to the positions of the microporous structures VH. The vacuum channels 2122 and the microporous structures VH form a closed conduit, allowing the array action unit 250 to apply suction through the conduit.

[0183] Next, as shown in Figures 8E and 8F, the adhesive substrate 223 moves toward the alignment substrate SUBa' to place the LED chips CP in the corresponding slots CAV2 of the alignment substrate SUBa'. In this embodiment, the alignment substrate SUBa is configured as a 3×3 array of slots CAV2, each of which can accommodate a single LED chip CP. However, the present disclosure is not limited to this embodiment. In this embodiment, the alignment portion 250 applies suction to the slots CAV2 containing the LED chips CP through a closed conduit formed by the microporous structure VH and the vacuum channel 2122, ensuring that the adhesion of the LED chips CP to the alignment substrate SUBa' is greater than their adhesion to the adhesive substrate 223. The adhesive substrate 223 then moves away from the alignment substrate SUBa', transferring the LED chips CP previously located on the adhesive substrate 223 to the corresponding slots CAV2 of the alignment substrate SUBa'.

[0184] In some embodiments, after the LED chips CP are transferred to the entire array of substrates SUBa', the electrodes of the LED chips CP contact the conductive layer CL on the entire array of substrates SUBa'. Therefore, the LED chips CP on the entire array of substrates SUBa' can be electrically tested by applying a test voltage TV to the conductive layer CL to confirm whether they can illuminate normally, as shown in FIG8G . During the electrical test, if a damaged LED chip CP is found (e.g., the second LED chip CP in FIG8G does not illuminate during the test), the damaged LED chip CP can be removed from the entire array of substrates SUBa' using a repair adhesive substrate 223r, and a new LED chip CP can be placed in the slot CAV2 originally occupied by the damaged LED chip CP, as shown in FIG8H to FIG8K .

[0185] The transfer process from the entire array of substrates SUBa′ to the target substrate may refer to the processes of FIG. 7G to FIG. 7L , and will not be repeated here.

[0186] Compared to the mass transfer process of Figures 7A to 7L, this embodiment can use a variety of different alignment substrates to perform preliminary and subsequent precise alignment arrangements, and can also implement electrical testing on the secondary alignment substrate SUBa' during the mass transfer process to promptly repair / replace defective LED chips, thereby avoiding the problem of discovering problems only when the LED chips are fixed on the target substrate and cannot be repaired, resulting in a decrease in product quality.

[0187] It should be noted that the above-described process of replacing damaged LED chips CP using the repair adhesive substrate 223r after electrical testing is merely an example. In other embodiments, users may employ different placement mechanisms, and the present disclosure is not limited thereto. The repair adhesive substrate 223r may be made of a similar material to the adhesive substrate 223, but with protrusions located only in specific locations, rather than an array of protrusions corresponding to the slots.

[0188] Please refer to Figures 3A and 9A to 9G, where Figures 9A to 9G are schematic diagrams of the mass transfer process performed by the mass transfer apparatus according to other embodiments of the present disclosure. The main difference between this embodiment and the previous embodiments is that a transfer process for adjusting the orientation of the LED chips CP is added between the transfer process of the entire array of substrates SUBa and the target substrate SUBt. This allows the LED chips CP to be transferred and arranged on the target substrate SUBt in the correct orientation at one time.

[0189] Specifically, in this embodiment, the LED chip CP is similar to the embodiment shown in Figures 8A to 8K above, and is designed to have a trapezoidal cross-section structure that is narrow at the top and wide at the bottom. For example, the electrodes of the LED chip CP are positioned at the top bottom, but the present disclosure is not limited to this. Furthermore, in this embodiment, the mass transfer apparatus utilizes a primary alignment substrate SUBa for aligning the LED chips CP, as an example. However, the present disclosure is not limited to this. In some embodiments, this embodiment can also be combined with the aforementioned embodiment to utilize a secondary alignment substrate SUBa' for inspection, repair, and precise alignment to perform mass transfer.

[0190] As shown in FIG9A , the entire array of substrates SUBa in this embodiment has multiple slots CAV1 . Each slot CAV1 is shaped to correspond to an LED chip CP having a trapezoidal cross-section, thereby accommodating a single LED chip CP. The process for properly fitting an LED chip CP into a slot CAV1 can be found in the description of the embodiment shown in FIG8A , and will not be repeated here.

[0191] After the carrying part 210 and the pick-up and placement part 220 complete pre-alignment (the specific process refers to the aforementioned embodiment and will not be repeated here), the entire array of substrates SUBa and the adhesive substrate 223 will be moved relative to each other to align the LED chip CP with the corresponding protrusion on the adhesive substrate 223, and the adhesive substrate 223 will move toward the entire array of substrates SUBa on the carrying platform 212 based on the detected vertical spacing so that the protrusion contacts the corresponding LED chip CP.

[0192] It should be noted that the plurality of LED chips CP on the array substrate SUBa include chip bodies cb. The LED chips CP are arranged in the array substrate SUBa such that the chip bodies cb are located at the bottom of the slots in the array substrate SUBa and are not exposed. Therefore, the adhesive surface of the adhesive substrate 223 contacts the surfaces of the plurality of LED chips CP on the array substrate SUBa that do not include the chip bodies cb.

[0193] At this time, the adhesive force of the adhesive substrate 223 acts on the LED chips CP on the entire array of substrates SUBa, causing the LED chips CP in contact with the adhesive substrate 223 to adhere to the adhesive substrate 223. When the adhesive substrate 223 moves away from the entire array of substrates SUBa, the LED chips CP are carried away from the entire array of substrates SUBa. In other words, the LED chips CP on the entire array of substrates SUBa are transferred to the adhesive substrate 223.

[0194] Next, as shown in Figures 9B and 9C , the adhesive substrate 223 is repositioned to align with the redirection substrate SUBm on the carrier platform 212. The adhesive substrate 223 then moves toward the redirection substrate SUBm to place the LED chip CP on the redirection substrate SUBm. In this embodiment, because the redirection substrate SUBm can be made of a material with higher adhesion than the adhesive substrate 223, the adhesion of the LED chip CP to the redirection substrate SUBm is greater than the adhesion of the LED chip CP to the adhesive substrate 223. Therefore, as the adhesive substrate 223 moves away from the redirection substrate SUBm, the LED chip CP previously located on the adhesive substrate 223 is transferred to the redirection substrate SUBm.

[0195] In some embodiments, the redirecting substrate SUBm may, for example, include an adhesive layer STL. The adhesive layer STL may, for example, be composed of a heat-resistant polyester and adhesive materials disposed on both sides thereof, wherein the thickness of the heat-resistant polyester may be between 17 μm and 33 μm, specifically, for example, 25 μm; and the thickness of the adhesive materials may be between 14 μm and 26 μm, specifically, for example, 20 μm. The above configuration enables the redirecting substrate SUBm to have the required adhesiveness. Furthermore, in order to prevent the LED chip CP adhered to the redirecting substrate SUBm from falling when flipping, while ensuring that the LED chip CP can be smoothly transferred to the second substrate SUB2, the adhesive force (peeling force) of the adhesive layer STL of the redirecting substrate SUBm may be, for example, between 0.2 N / 25 mm and 20.5 N / 25 mm, specifically, for example, 0.20 N / 25 mm, 0.83 N / 25 mm, 1.85 N / 25 mm, or 20.11 N / 25 mm, but the present disclosure is not limited thereto.

[0196] Next, as shown in Figures 9D and 9E , after the LED chips CP are transferred to the redirection substrate SUBm, the mass transfer device flips the redirection substrate SUBm, with the multiple LED chips CP attached, so that the LED chips CP, previously facing upward, now face downward. The position of the redirection substrate SUBm is then realigned to align with the target substrate SUBt. This alignment process can be similar to the pre-alignment process described in Figures 6A and 6B , but the present disclosure is not limited thereto. In this embodiment, the configuration of the target substrate SUBt is similar to that of the previous embodiment and will not be repeated here.

[0197] Next, as shown in Figures 9F and 9G , once the position of the redirecting substrate SUBm has been adjusted, the clamping mechanism 222 moves the redirecting substrate SUBm toward the target substrate SUBt, allowing the LED chip CP to contact the bonding layer BL of the target substrate SUBt. After the LED chip CP contacts the target substrate SUBt, the heating assembly 213 is activated to heat the target substrate SUBt via the carrier platform 212. The heated bonding layer BL gradually solidifies, improving the adhesion of the LED chip CP to the target substrate SUBt.

[0198] After a set heating period, the redirection substrate SUBm is removed. In some embodiments, the bonding layer BL between the LED chip CP and the target substrate SUBt can have an adhesion strength of 400-1000 kPa and a thickness of 1.0-5.0 μm. This adhesion is greater than the peeling force of the adhesive material of the adhesive layer STL of the redirection substrate SUBm. Therefore, when the redirection substrate SUBm and LED chip CP are separated, the LED chip CP does not fall off the target substrate SUBt. In other words, the LED chip CP separates from the adhesive layer STL of the redirection substrate SUBm and remains on the bonding layer BL on the target substrate SUBt.

[0199] In some embodiments, the set heating temperature may be, for example, 100° C., and the set heating time may be, for example, 10 minutes to complete the curing, but the present disclosure is not limited thereto.

[0200] In other words, at this time, since the adhesion of the LED chip CP to the target substrate SUBt is greater than the adhesion to the redirection substrate SUBm, the LED chip CP will be separated from the redirection substrate SUBm and transferred to the target substrate SUBt, thus completing the transfer process.

[0201] Therefore, in the application of LED chip transfer, the mass transfer process of the above-mentioned embodiments of Figures 9A to 9G can achieve the beneficial effect of accurately and quickly flipping multiple grains at one time without affecting the grains that have been neatly arranged and facing the same direction on the entire column of substrates, while also achieving the beneficial effect of smoothly fixing the flipped grains to the target backplane.

[0202] In addition, in the cross-sectional structures illustrated in the embodiments of Figures 6A to 9G above, in order to clearly illustrate the relative configuration relationship between the LED chip CP and the source substrate SUBs / the entire array substrate SUBa / the redirection substrate SUBm / the target substrate SUBt, the structure is illustrated as the LED chip CP protruding from the source substrate SUBs / the entire array substrate SUBa / the redirection substrate SUBm / the target substrate SUBt, but the present disclosure is not limited to this. In actual applications, according to the structural design of the source substrate SUBs / the entire column substrate SUBa / the redirecting substrate SUBm / the target substrate SUBt, the LED chip CP can also be configured to have the same height as the source substrate SUBs / the entire column substrate SUBa / the redirecting substrate SUBm / the target substrate SUBt (that is, the top of the LED chip CP is roughly in the same plane as the top surface of the source substrate SUBs / the entire column substrate SUBa / the redirecting substrate SUBm / the target substrate SUBt), or be configured to be slightly lower than the height of the source substrate SUBs / the entire column substrate SUBa / the redirecting substrate SUBm / the target substrate SUBt (that is, the top of the LED chip CP is slightly lower than the top surface of the source substrate SUBs / the entire column substrate SUBs / the redirecting substrate SUBm / the target substrate SUBt), wherein the top surface of the source substrate SUBs / the entire column substrate SUBa / the redirecting substrate SUBm / the target substrate SUBt refers to the surface away from the side of the carrying platform 212.

[0203] It should be mentioned here that although the mass transfer process of the above embodiments is described in conjunction with the mass transfer device 200 of the embodiment of Figure 3A, the present disclosure is not limited to this. In other embodiments, the above mass transfer process can also be implemented in conjunction with the mass transfer device 300 of Figures 3B and 3C. When the mass transfer device 300 is used for implementation, the source substrate SUBs, the array substrates SUBa and SUBa', the redirected substrate SUBm, and the target substrate SUBt mentioned in the above embodiments can be respectively configured on the carrying platforms 312a~312d, and are sequentially picked up, placed, and transferred between the two carrying platforms 312a~312d through the multi-axis motion control device 321.

[0204] FIG10A is a schematic diagram of the structural configuration of the entire array substrate of some embodiments of the present disclosure, wherein the upper half of FIG10A is a schematic diagram of the top view of the entire array substrate SUBa, and the lower half of FIG10A is a schematic diagram of the cross-sectional structure of the entire array substrate SUBa on the section line AA'. Referring to FIG10A , the entire array substrate SUBa of this embodiment includes a substrate body BD and a plurality of slots CAV formed on the substrate body BD and arranged in an array, wherein the size of each slot CAV is designed to roughly correspond to the size of a single LED chip CP. From the appearance, the slot CAV is a recessed accommodating space on the substrate body BD. When the LED chip CP is placed in the slot CAV, the bottom or top of the LED chip CP can be roughly flat against the bottom surface of the slot CAV. In other words, when the LED chip CP is placed in the slot CAV, the bottom surface of the slot CAV will be roughly parallel to the bottom or top of the LED chip CP.

[0205] Figure 10B illustrates the structural configuration of an entire array substrate according to other embodiments of the present disclosure. The upper portion of Figure 10B shows a top view of the entire array substrate SUBa', while the lower portion shows a cross-sectional view of the entire array substrate SUBa' along section line AA'. Referring to Figure 10B , the entire array substrate SUBa' of this embodiment is similar to the entire array substrate SUBa of the aforementioned embodiment, similarly comprising a substrate body BD and a plurality of array-arranged slots CAV formed therein. Therefore, similar structural descriptions may be referred to the aforementioned embodiments and will not be repeated here.

[0206] The main difference between these two embodiments is that in this embodiment, each slot CAV of the array substrate SUBa' also has a corresponding microporous structure VH. One end of the microporous structure VH can be exposed to the bottom surface of the slot CAV, and the other end of the microporous structure VH is connected to the array action part (such as 250). During the transfer process, the array action part can apply vacuum suction to the LED chips in the slot CAV through the microporous structure VH, so that the adhesion of the LED chips to the array substrate SUBa is greater than the adhesion of the adhesive substrate (such as 223_1 / 223_2), thereby achieving the transfer of the LED chips between the substrates.

[0207] In some embodiments, the supporting platform 212 may include, for example, a platform body 2121 and a vacuum channel 2122 disposed within the platform body 2121. When the array of substrates SUBa' is disposed on the supporting platform 212, the position of the microporous structure VH in each slot CAV corresponds to the position of the vacuum channel 2122, thereby forming a closed conduit through which the array of active components can apply suction to the LED chips within the slots CAV. It should be noted that the term "closed conduit" means that when the array of active components applies suction, gaps in the conduit do not prevent the application of suction to the LED chips, and does not necessarily require the conduit to be completely sealed and gapless.

[0208] In some embodiments, the vacuum channels 2122 of the support platform 212 can be configured to have staggered first comb-shaped channels 2122a and second comb-shaped channels 2122b, wherein the first comb-shaped channels 2122a are configured at positions corresponding to odd-numbered rows of slots CAV, and the second comb-shaped channels 2122b are configured at positions corresponding to even-numbered rows of slots CAV. This configuration allows the suction force applied by the array of action units 250 to be evenly distributed across the platform body 2121, thereby preventing the platform body 2121 from collapsing or other abnormalities when the array of action units 250 applies suction.

[0209] In some embodiments, a raised support wall SPW may be formed on the platform body 2121 in the area between the first comb-shaped channels 2122a and the second comb-shaped channels 2122b. The support wall SPW can be used to prevent the surrounding areas of the first comb-shaped channels 2122a and the second comb-shaped channels 2122b from collapsing when the array action portion 250 applies suction, thereby improving the lifespan and reliability of the support platform 212.

[0210] Figure 10C is a schematic diagram of the structural configuration of the entire column substrate of other embodiments of the present disclosure, wherein the upper half of Figure 10C is a schematic diagram of the top-down structure of the entire column substrate SUBa", and the lower half of Figure 10C is a schematic diagram of the cross-sectional structure of the entire column substrate SUBa" on the section line AA'. Referring to Figure 10C, the entire column substrate SUBa" of this embodiment is similar to the entire column substrate SUBa' of the aforementioned embodiment, and also includes a substrate body BD and a plurality of slots CAV arranged in an array formed on the substrate body BD. Therefore, similar structural descriptions can refer to the aforementioned embodiments and will not be repeated here.

[0211] The main difference between this embodiment and the previous embodiment is that each slot CAV of the entire array of substrates SUBa' in this embodiment also has a corresponding magnetic structure MI, and the bottom of each slot CAV has a corresponding material receiving portion MA. The magnetic structure MI can, for example, fill the material receiving portion MA. In some embodiments, the material receiving portion MA can be a groove or a microporous structure VH similar to the embodiment of FIG10B , but this disclosure is not limited thereto.

[0212] In some embodiments, the LED chip CP includes a chip body (not shown, i.e., the portion containing the light-emitting layer) and a magnetic component (not shown). The chip body is disposed on one side of the LED chip CP, and the magnetic component is disposed on the opposite side of the LED chip CP. During the transfer of such LED chips CP, the magnetic components on the LED chips CP can fall into the slots CAV of the entire array of substrates SUBa in the same direction in response to the magnetic force provided by the magnetic structure MI.

[0213] For example, the magnetic structure MI and the magnetic components on the LED chip CP can be set to point in a mutually attractive magnetic direction, so that when the LED chip CP falls into the slot CAV, the side on which the magnetic components are provided will face the magnetic structure MI. In other words, the side of the LED chip CP on which the chip body is provided will be exposed upward. Through the above-mentioned configuration of the entire array of substrates SUBa / SUBa' / SUBa”, the LED chips CP can be made to fall into the corresponding slots CAV facing the same direction, so as to achieve neat arrangement of the LED chips CP. The structural design of the entire array of substrates SUBa / SUBa' / SUBa" in different embodiments is further illustrated below with reference to Figures 11A to 11H.

[0214] Figures 11A to 11H are schematic cross-sectional views of the various embodiments of the present disclosure, wherein each drawing depicts the structural configuration of a single slot as an example. Those skilled in the art will appreciate that the slot configurations described in each embodiment can be applied to at least some / all slots of the entire array of substrates. Furthermore, the various embodiments of the entire array of substrates described below are primarily described using two-dimensional cross-sectional structures. Therefore, only the width (horizontal distance of the drawing; i.e., the x-direction distance) and height (vertical distance of the drawing; i.e., the y-direction distance) of the LED chip / slot are depicted on the drawings. However, those skilled in the art will appreciate that the design considerations for the length (normal distance of the drawing; i.e., the z-direction distance) of the LED chip / slot are similar to those for the width of the LED chip / slot. Therefore, although the description of the subsequent embodiments focuses on width, those skilled in the art will appreciate the design considerations for the length of the LED chip / slot based on the relevant descriptions.

[0215] Referring first to FIG11A , in this embodiment, a cubic groove CAV is formed on the substrate body of the entire array substrate SUBa1. The cubic groove CAV can be used to accommodate a cubic LED chip CPa, where the LED chip CPa has a width Wcp and a height Hcp, and the groove CAV has a width Wa and a depth Ha.

[0216] In this embodiment, the width Wa of the groove CAV is designed to be slightly larger than the width Wcp of the LED chip CPa, and the depth Ha of the groove CAV is designed to be slightly larger than the height Hcp of the LED chip CPa.

[0217] In some embodiments, the width Wa of the slot CAV is designed to be between 101% and 140% of the width Wcp of the LED chip CPa to prevent multiple LED chips CPa from falling within the same slot CAV. Because LED chips CPa of different emission wavelengths may have different sizes, the width Wcp of the LED chip CPa described herein may be determined based on the LED chip CPa with the largest width, but this disclosure is not limited to this.

[0218] In some embodiments, the depth Ha of the slot CAV is designed to be between 101% and 140% of the height Hcp of the LED chip CPa, preferably between 101% and 110%. This prevents an LED chip CPa that falls into the slot CAV from subsequently being shaken or otherwise impacted and moving out of the slot CAV, or two LED chips CPa from entering the same slot. Similarly to the above, the height Hcp of the LED chip CPa described herein can be determined based on the LED chip CP with the greatest height, but this disclosure is not limited thereto.

[0219] For example, if the width Wcp / height Hcp of the LED chip CPa is 5 μm, the width Wa / depth Ha of the trench CAV can be designed to be between 5.25 μm and 6.5 μm.

[0220] Referring to Figure 11B , this embodiment illustrates an exemplary implementation of an array substrate SUBa2 having another CAV structure. In this embodiment, the CAVs on the array substrate SUBa2 are designed to accommodate a double-layer LED chip CPb. Specifically, the double-layer LED chip CPb comprises a first portion P1 and a second portion P2. Both portions P1 and P2 can be, for example, cubic structures, with the first portion P1 formed on one side (the upper side in the figure) of the second portion P2.

[0221] In this embodiment, the width Wcp1 of the first portion P1 is smaller than the width Wcp2 of the second portion P2, and the sum of the height Hcp1 of the first portion P1 and the height Hcp2 of the second portion P2 (i.e., the height of the LED chip CPb) is greater than the width Wcp1 of the first portion P1. In other words, the LED chip CPb has a "convex"-shaped structure.

[0222] On the other hand, the slot CAV of this embodiment corresponds to the double-layer structure of the LED chip CPb, wherein the slot CAV includes a first side wall SW1, a second side wall SW2, a first bottom surface BS1 and a second bottom surface BS2. The first side wall SW1 surrounds the periphery of the first bottom surface BS1, and the bottom of the first side wall SW1 is connected to the first bottom surface BS1. The space defined by the first side wall SW1 and the first bottom surface BS1 (hereinafter referred to as the first accommodating space) is used to accommodate the first part P1 of the LED chip CPb, wherein the height of the first side wall SW1 is Ha1, and the width defined by the first bottom surface BS1 is Wa1. One side of the second bottom surface BS2 is connected to the top of the first side wall SW1. The second side wall SW2 surrounds the periphery of the second bottom surface BS2, and the bottom of the second side wall SW2 is connected to the other side of the second bottom surface BS2. The space defined jointly by the second side wall SW2, the first bottom surface BS1 and the second bottom surface BS2 (i.e., the space in the slot CAV that does not overlap with the first accommodating space, hereinafter referred to as the second accommodating space) is used to accommodate the second part P2 of the LED chip CPb, wherein the height of the second side wall SW2 is Ha2, and the sum of the widths of the first bottom surface BS1 and the second bottom surface BS2 is Wa2.

[0223] Specifically, the slot CAV of this embodiment forms a recess corresponding to the "convex"-shaped double-layer LED chip CPb, wherein the width Wa1 is smaller than the width Wa2. In some embodiments, the width Wa2 is 110% to 200% of the width Wa1, but the present disclosure is not limited to this. Furthermore, in this embodiment, the sum of the heights Ha1 and Ha2 (i.e., the depth of the slot CAV) is designed to be greater than the width Wa1, so that the LED chip CPb can only properly fall into the slot CAV when the first portion P1 is facing the first receiving space (i.e., the first portion P1 is located in the first receiving space, and the second portion P2 is located in the second receiving space).

[0224] In some embodiments, the width Wa1 / Wa2 of the groove CAV can be 101% to 140% of the width Wcp1 / Wcp2 of the LED chip CPb, and the depth Ha1 / Ha2 of the groove CAV can be 101% to 140% of the height Hcp1 / Hcp2 of the LED chip CPb, but the present disclosure is not limited to this.

[0225] In some embodiments, the width Wa2 may be, for example, selected from a numerical range greater than 5 μm and less than 100 μm, but the present disclosure is not limited thereto.

[0226] Through the above-mentioned structural configuration, if the LED chip CPb falls into the slot CAV at an angle where the first part P1 is not facing the first accommodating space, it will be easily shaken out of the slot CAV during the action of the entire column force, thereby preventing the LED chip CPb from being placed in the slot CAV of the entire column substrate in an unexpected manner, causing subsequent mass transfer failure. On the other hand, once the LED chip CPb falls into the slot CAV correctly, the LED chip CPb will be more easily restricted by the side walls SW1 / SW2 and the bottom surface BS1 / BS2 during vibration or other forces, and will not easily break away from the slot CAV and be shaken out again, thereby ensuring the success rate of the entire column substrate. In summary, the mass transfer device and mass transfer method proposed in the embodiment of the present disclosure can utilize a sticky substrate configuration having a rigid layer and a sticky layer to realize a single action to transfer the target object on the source substrate to the target substrate, thereby effectively improving the efficiency of the mass transfer. Furthermore, by utilizing an intermediate alignment substrate, the mass transfer apparatus of the disclosed embodiment can first arrange the target objects on the source substrate according to the desired target substrate size, and then simultaneously transfer all the target objects aligned by the alignment substrate to the target substrate, further improving the efficiency of mass transfer between substrates of different sizes. Furthermore, the alignment substrate proposed in the disclosed embodiment can form a slot structure that can accommodate LED chips with a double-layer structure, allowing the LED chips to correctly fall into the corresponding slots during the alignment process and be less likely to be shaken out after falling into the slots, thereby improving the success rate of alignment.

[0227] Referring to Figure 11C , this embodiment illustrates an exemplary implementation of an array substrate SUBa3 having another CAV structure. In this embodiment, the CAVs on the array substrate SUBa3 are designed to accommodate trapezoidal LED chips CPc. Specifically, the trapezoidal LED chips CPc have an upper base width Wcp1, a lower base width Wcp2, and a height Hcp. The chip body and electrodes may be positioned near the upper base, for example, but this disclosure is not limited thereto.

[0228] On the other hand, the slot CAV of this embodiment is arranged to correspond to the trapezoidal structure of the LED chip CPC, wherein the bottom width of the slot CAV is Wa1, the opening width at the top of the slot CAV is Wa2, and the depth of the slot CAV is Ha. In this embodiment, the bottom width Wa1 of the slot CAV can be designed to be between 101% and 140% of the upper base width Wcp1 of the LED chip CPC, and the top opening width Wa2 of the slot CAV can be designed to be between 101% and 140% of the lower base width Wcp2 of the LED chip CPC, so that the slot shape CAV generally conforms to the volume of the LED chip CPC and is slightly larger than the volume of the LED chip CPC, but the present disclosure is not limited to this.

[0229] From another perspective, the trapezoidal structure of the slot CAV on the entire array of substrates SUBa3 is formed by a bottom surface BS1 and a side wall SW1, wherein the bottom surface BS1 is located at the bottom of the slot CAV, and the side wall SW1 surrounds the periphery of the bottom surface BS1, and the bottom of the side wall SW1 is connected to the bottom surface BS1. In this embodiment, at least one side of the side wall SW1 is not perpendicular to the bottom surface BS1. If the side wall SW1 is cylindrical, the at least one side may refer to a cross-section of the cylinder. In other words, as long as the cross-sectional structure of the slot CAV along a section line (such as AA') has a structural feature in which the side wall SW1 and the bottom surface BS1 are not perpendicular, it belongs to the trapezoidal structure.

[0230] Referring to Figure 11D , this embodiment illustrates an exemplary embodiment of an array substrate SUBa4 having another CAV structure. In this embodiment, a cube-shaped CAV is formed on the substrate body of the array substrate SUBa4. The CAV accommodates a similarly cube-shaped LED chip CPa, where the LED chip CPa has a width Wcp and a height Hcp. The CAV also has a width Wa and a depth Ha.

[0231] In this embodiment, a microporous structure VH is also provided at the bottom of the slot CAV. One end of the microporous structure VH is exposed on the bottom surface of the slot CAV, and the other end is exposed on the bottom surface of the entire array substrate SUBa4. With this arrangement, the entire array of active parts can absorb the LED chips placed in the slot CAV through the microporous structure VH.

[0232] Referring to Figure 11E , this embodiment illustrates an exemplary implementation of an array substrate SUBa5 having another CAV structure. This embodiment is similar to the embodiment shown in Figure 11D , with the primary difference being that the array substrate SUBa5 further includes a conductive layer CL. This conductive layer CL is located at the bottom of the CAV. When an LED chip CPa is placed within the CAV, at least one electrode on the LED chip CPa is electrically connected to the conductive layer CL. Consequently, by energizing the conductive layer CL, electrical and luminescence testing of the LED chips CPa can be performed on the array substrate SUBa5.

[0233] Please refer to Figure 11F. This embodiment illustrates an implementation example of an entire array substrate SUBa6 having another slot CAV structure. In this embodiment, a cubic slot CAV is formed on the substrate body of the entire array substrate SUBa6. The cubic slot CAV can be used to accommodate an LED chip CPd having a trapezoidal structure. Specifically, the upper base width of the LED chip CPd having a trapezoidal structure is Wcp1, the lower base width is Wcp2, and the height is Hcp. In this embodiment, the width Wa of the slot CAV can be designed to be slightly larger than the lower base width Wcp2 of the LED chip CPd, so that the LED chip CPd can be configured in such a way that the lower bottom contacts the bottom surface BS of the slot CAV when it falls into the slot CAV.

[0234] In addition, the entire array substrate SUBa6 further includes an electromagnetic generating component EM, which can be controlled by the power provided by the entire array action part to generate a magnetic force with a specific directionality. The electromagnetic generating component EM is, for example, an electromagnet.

[0235] The LED chip CPd includes a chip body cb and a magnetic assembly MU. The chip body cb may be, for example, positioned near the upper base, and the magnetic assembly MU may be, for example, a permanent magnet positioned near the lower base, but the present disclosure is not limited thereto. During mass transfer using the alignment substrate SUBa6, the LED chip CPd is dropped into the slot CAV of the alignment substrate SUBa6 by the force applied by the alignment action portion (e.g., 250). Simultaneously, the alignment action portion provides power to drive the electromagnetic generating assembly EM, causing it to generate a magnetic force that attracts / repulses the magnetic assembly MU.

[0236] In some embodiments, the electromagnetic generating assembly EM generates a magnetic force that attracts the magnetic assembly MU during the alignment process, so that the LED chip CPd that falls into the slot CAV with its lower bottom side facing the bottom of the slot CAV can be stably adsorbed in the slot CAV in response to the magnetic force. On the other hand, if the LED chip CPd falls into the slot CAV with its upper bottom (i.e., the side with the chip body cb) facing the bottom of the slot CAV, the electromagnetic generating assembly EM will generate a repulsive force on the magnetic assembly MU, thereby causing the LED chip CPd to flip to a configuration with its lower bottom side facing the bottom of the slot CAV during the alignment process. In this way, the misaligned chips can be flipped, so that all LED chips CPd can face the same direction after the alignment is completed.

[0237] In some embodiments, the electromagnetic generating component EM can also generate a magnetic force that repels the magnetic component MU during the alignment process, so that only when the bottom side above the LED chip CPd falls into the slot CAV toward the bottom of the slot CAV, it can be stably adsorbed in the slot CAV and will not be affected by the force of the alignment and flipped again.

[0238] Specifically, when manufacturing an array substrate SUBa6 with an electromagnetic generator EM, a stacked coil is typically wrapped around an iron core to create an electromagnet whose magnetic force can be controlled by electricity. The electromagnet is then placed at the bottom of the slot CAV in the array substrate SUBa6, thereby achieving an array substrate SUBa6 structure capable of attracting LED chips CPd. However, to achieve the magnetic alignment function, the LED chips CPd must be customized with embedded magnets, and the electromagnetic generator EM must also be embedded in the array substrate SUBa6, which results in high costs for mass transfer.

[0239] In addition, the use of electromagnetic generating components EM for row control requires repeated experimental testing to adjust the magnetic parameters of the row substrate SUBa6 so that the entire row of LED chips CPd can be smoothly turned over to face the same direction, while at the same time avoiding the situation where the magnetic LED chips CPd are attracted to each other and cannot be aligned.

[0240] Furthermore, the electromagnetic generating element (EM) formed by coils requires adjusting the magnetic parameters by varying the number of coils, the current level, and the material of the central conductor. Therefore, adjusting the magnetic parameters during experimental testing is relatively complex and time-consuming, hindering the smooth progress of the production process.

[0241] Please refer to Figure 11G. This embodiment illustrates an implementation example of an entire array substrate SUBa7 having another slot CAV structure. In this embodiment, a cubic slot CAV is formed on the substrate body of the entire array substrate SUBa7. The cubic slot CAV can be used to accommodate an LED chip CPC having a trapezoidal structure. Specifically, the upper base width of the LED chip CPC having a trapezoidal structure is Wcp1, the lower base width is Wcp2, and the height is Hcp. In this embodiment, the width Wa of the slot CAV can be designed to be slightly larger than the lower base width Wcp2 of the LED chip CPC, so that the LED chip CPC can be configured in such a way that the lower bottom contacts the bottom surface BS of the slot CAV when it falls into the slot CAV.

[0242] In this embodiment, the array substrate SUBa7 includes a substrate body BD, a plurality of slots CAV arranged in an array, material receiving portions MA corresponding to the slots CAV, and a magnetic structure MI. The cube-shaped slots CAV are used to accommodate LED chips CPc having a trapezoidal structure. The trapezoidal LED chips CPc have an upper base width Wcp1, a lower base width Wcp2, and a height Hcp.

[0243] In this embodiment, the LED chip CPc is made of a material containing ferromagnetic elements (such as iron or nickel). For example, the LED chip CPc can be a micro-LED chip made of a copper magnetic wafer (CMW).

[0244] In this embodiment, the width Wa of the groove CAV can be designed to be slightly larger than the bottom width Wcp2 of the LED chip CPC, so that the LED chip CPC can be configured in a manner that the bottom contacts the bottom surface BS of the groove CAV when it falls into the groove CAV. Material accommodating portions MA are respectively formed at the bottom of the groove CAV of the substrate body BD, wherein the material accommodating portion MA can be a perforation or a groove, and the material accommodating portion MA corresponds to the bottom side of the LED chip CPC (that is, the side away from the chip body cb). As shown in Figure 7G, the material accommodating portion MA of this embodiment takes a perforation as an example, but the present disclosure is not limited to this. In this embodiment, the magnetic structure MI can be formed, for example, of a curable magnetic material and is arranged in the material accommodating portion MA.

[0245] Specifically, during the manufacturing process of the entire array substrate SUBa7, magnetic material in an unsolidified state (eg, a flowable state) can be injected into the material receiving portion MA within each slot CAV, and a magnetic structure MI can be formed after the magnetic material is solidified.

[0246] The so-called uncured state is not particularly limited, as long as the curable magnetic material can be injected into the material receiving portion MA. In other words, the curable magnetic material can be fluid. From the perspective of material viscosity, the curable magnetic material can be viscous enough to remain in the material receiving portion MA during curing. Regarding curing, any method that can cure the curable magnetic material, whether air-drying, air-drying, or other methods, is not limited by this disclosure.

[0247] Furthermore, the curable magnetic material injected into the material receiving portion MA can be any material having magnetic properties, such as a magnetic fluid. The curable magnetic material preferably comprises carbon (C), oxygen (O), and iron (Fe), with the carbon (C) content being 42.8%, the oxygen (O) content being 19.5%, and the iron (Fe) content being 37.7%, but the curable magnetic material is not limited thereto. The contents of the aforementioned components may be varied as long as the curable magnetic material exhibits magnetic properties.

[0248] After the curable magnetic material injected into the material receiving portion MA is cured to form the magnetic structure MI, the bottom of the groove CAV of the substrate body BD may be magnetic.

[0249] When the user uses the alignment substrate SUBa7 of this embodiment to align the LED chips CPC, the magnetic structure MI of the alignment substrate SUBa7 can effectively adsorb the ferromagnetic substrate of the LED chip CPC to the bottom of the slot CAV, thereby achieving the effect of making all the LED chips CPC face in the same direction.

[0250] In this embodiment, since the material receiving portion MA is a perforated structure, the amount of curable magnetic material can be easily increased or decreased to adjust the magnetic parameters of the entire array substrate SUBa7 during testing. For example, when reducing the amount of curable magnetic material, the curable magnetic material can be allowed to flow out from the bottom of the material receiving portion MA; when increasing the amount of curable magnetic material, it can be injected from the top of the material receiving portion MA. By increasing or decreasing the amount of curable magnetic structure MI in the above manner, the magnetic force of the final magnetic structure MI can be quickly controlled, and the magnetic parameters of the entire array substrate SUBa7 can be quickly changed, thereby reducing the manufacturing and testing costs of the entire array substrate SUBa7.

[0251] Furthermore, because the magnetic structure MI is only located at the bottom of the arrayed slots CAV, the rest of the substrate body BD is non-magnetic except for the bottom of the slots CAV. Furthermore, in some embodiments, the material receiving portion MA can be positioned at a certain distance from the inner sidewall SW of the corresponding slot CAV. This allows the LED chips CPc to fit as closely as possible to the bottom surface BS of the slots CAV during alignment, effectively preventing the LED chips CPc from being accommodated skewed within the slots CAV.

[0252] In some embodiments, when viewing the substrate body BD from above, the cross-sectional area of ​​the material accommodation portion MA is smaller than the bottom area of ​​the LED chip CPC. In other words, when the LED chip CPC is placed into the slot CAV and attracted by the magnetic structure MI, it covers the entire material accommodation portion MA. This ensures that the LED chip CPC conforms as closely as possible to the bottom surface BS of the slot CAV, effectively preventing the LED chip CPC from being accommodated skewed within the slot CAV.

[0253] Referring to Figure 11H , this embodiment illustrates an exemplary implementation of an array substrate SUBa8 having another CAV structure. In this embodiment, a cube-shaped CAV is formed on the substrate body of the array substrate SUBa8. The cube-shaped CAV can be used to accommodate LED chips CPc having a trapezoidal structure.

[0254] Specifically, this embodiment is substantially identical to the embodiment shown in FIG. 11G . The primary difference between the two is that the material receiving portion MA in this embodiment is structured as a recessed groove, meaning that the bottom of the substrate body is not penetrated. Other identical or similar features and / or advantages can be found in the description of the aforementioned embodiment and will not be repeated here.

[0255] Through the embodiments disclosed herein, an entire array of substrates can be easily made magnetic, thereby allowing a plurality of ferromagnetic LED chips arranged in random directions to be flipped to face the same direction and arranged in an array in the slots of the substrate body. Furthermore, since the entire array of substrates is a material receiving portion disposed with a curable magnetic material in a material receiving portion located at the bottom of the slot, the dosage of the curable magnetic material can be easily adjusted before the magnetic material is cured, thereby achieving the effect of rapidly changing the magnetic parameters of the entire array of substrates.

[0256] Figure 11 is a schematic diagram of the structural configuration of an LED chip according to some embodiments of the present disclosure. Referring to Figure 11 , the LED chip 10 described in this embodiment can be applied to the embodiments described in Figures 8A to 8K and 11C above, but is not limited thereto. In this embodiment, the LED chip 10 includes a light-emitting layer 11, a first electrode 12, a second electrode 13, a third electrode 14, an insulating layer 15, a sacrificial layer 16, and a giant transfer layer 17. The first and second electrodes 12 and 13 are disposed on one side of the light-emitting layer 11, and the third electrode 14 is disposed on the opposite side of the light-emitting layer 11. The insulating layer 15 is disposed on the same side as the first and second electrodes 12 and 13 and is formed between the first and second electrodes 12 and 13. The sacrificial layer 16 is formed on the surface of the light-emitting layer 11 on the side where the third electrode 14 is disposed and extends to the sides of the light-emitting layer 11 and the first and second electrodes 12 and 13. The giant transfer layer 17 is formed on the sacrificial layer 16 and the third electrode 14 and is electrically connected to the third electrode 14. Its thickness can be determined by the trench depth of the entire substrate array.

[0257] In this embodiment, the first electrode 12 and the second electrode 13 can be configured as, for example, a U-shaped electrode, wherein the hollow portion in the middle of the U-shaped electrode can facilitate electrical lighting testing during the mass transfer process to prevent the light emitted by the light-emitting layer 11 from being blocked, but the present disclosure is not limited to this. The third electrode 14 can be configured as a circular electrode, for example, but the present disclosure is also not limited to this. In addition, in addition to serving as conductive interfaces themselves, the first electrode 12, the second electrode 13, and the third electrode 14 can also play a supporting role during the subsequent mass transfer process.

[0258] The insulating layer 15 is used to electrically isolate the first electrode 12 from the second electrode 13 , wherein the insulating layer 15 may be a transparent insulating layer to prevent the light emitting layer 11 from being blocked during an electrical test during a subsequent giant rotation process.

[0259] The sacrificial layer 16 is formed of a material that is easy to remove, such as an organic material, an organic polymer, etc., wherein the sacrificial layer 16 is used to connect the interface between the macro transfer layer 17 and the light-emitting layer 11 during the mass transfer process, and can be removed by chemical methods or other methods after the mass transfer is completed.

[0260] The giant transfer layer 17 can be set to a trapezoidal shape or other shapes that can be used to identify the direction (such as an asymmetric cross-sectional structure). Taking the example of a trapezoidal configuration as shown in Figure 12, the upper base width of the giant transfer layer 17 will be set corresponding to the thickness of the light-emitting layer 11 / sacrificial layer 16, and the lower base width of the giant transfer layer 17 will be designed to be larger than the upper base width to form a trapezoidal structure. During the mass transfer process, the giant transfer layer 17 corresponding to the shape of the slots of the entire column of substrates can enable the LED chip 10 to fall into the slot in the set direction, so as to avoid the problem of inconsistent directions of the LED chips 10 in different slots. In this embodiment, the giant transfer layer 17 can be made of a conductive material, such as an iron-nickel alloy. In this way, when performing electrical testing, the electrical signal can be applied to the third electrode 13 through the giant transfer layer 17.

[0261] It should be noted that the trapezoidal structure may be configured to be removable along with the sacrificial layer 16 during the subsequent manufacturing process. Therefore, this structural feature may not necessarily be directly observable in the final product after the transfer. However, as long as the structure described in this disclosure is employed during the transfer or manufacturing process, even if the structure ultimately does not exist, it should still fall within the trapezoidal structure defined in this disclosure. Furthermore, the vertically asymmetric cross-sectional structure may, for example, be characterized by the giant transfer layer 17 having a different bottom width than the top width.

[0262] From another perspective, the LED chip 10 includes a light-emitting portion (i.e., the light-emitting layer 11, the first electrode 12, the second electrode 13, the third electrode 14, and the insulating layer 15) that remains after the mass transfer is completed, and a macro-rotation portion (i.e., the sacrificial layer 16 and the macro-rotation layer 17) that is removed after the mass transfer is completed. The macro-rotation portion serves as a contact interface for pick-and-place during the mass transfer process. In other words, when the LED chip 10 is placed in an end product on a target substrate, the macro-rotation portion is not observable.

[0263] Figures 13A to 13I are schematic diagrams illustrating the manufacturing process for LED chips according to some embodiments of the present disclosure. The manufacturing process for the LED chips described in this embodiment can be used to manufacture the LED chip 10 described in the embodiment of Figure 12 . Referring first to Figure 13A , in the LED chip manufacturing process, a plurality of first electrodes 12 and second electrodes 13 are firstly disposed on a substrate 5 at intervals. The substrate can be made of a semiconductor material such as a silicon substrate.

[0264] After forming the first electrodes 12 and the second electrodes 13 , a transparent insulating layer 15 is formed on the substrate 5 and filled between the first electrodes 12 and the second electrodes 13 to electrically isolate the electrodes, as shown in FIG13B .

[0265] Next, as shown in FIG13C , a light-emitting layer 11 is formed on the first electrode 12 , the second electrode 13 and the insulating layer 15 . Those skilled in the art will appreciate that the light-emitting layer 11 may have different structural configurations depending on the selected manufacturing process and the desired color.

[0266] After forming the light-emitting layer 11, the third electrode 14 is disposed on the light-emitting layer 11, as shown in Figure 13D . Next, as shown in Figure 13E , the excess light-emitting layer 11 and insulating layer 15 are removed, resulting in a light-emitting portion 10L of multiple LED chips. After the light-emitting portion 10L is formed, a removable sacrificial layer 16 is formed on the light-emitting portion 10L, and a giant transfer layer 17 is formed on the sacrificial layer 16, as shown in Figure 13F .

[0267] Next, as shown in Figures 13G and 13I , after removing the substrate 5 and excess sacrificial layer 16, the macro-transfer layer 17 can be shaped to have a trapezoidal cross-section, using laser cutting, etching, or other methods, to align with the slots of the entire array of substrates. This completes the fabrication of the LED chips 10. Each LED chip 10 can then undergo subsequent post-processing, such as mixed cleaning, to remove residual adhesive and other foreign matter. Once cleaning is complete, the subsequent mass transfer process can begin.

[0268] In the embodiment of the present disclosure, the LED chips (such as CP, 10) transferred and set on the target substrate can be LED chips with the same wavelength range, or they can be multi-color LED chips with different wavelength ranges, such as blue light wavelength range, red light wavelength range and green light wavelength range.

[0269] After the mass transfer process is complete, the LED chips are moved to specific locations on a target substrate (e.g., a display substrate), forming an end product (e.g., a display panel) or a semi-finished product. The transferred LED chips are then inspected and repaired during the manufacturing process. Figures 14A through 14D illustrate various structural configurations of display panels after mass transfer, and further explain the inspection and repair processes for these different configurations.

[0270] 14A, which shows a schematic diagram of the structure of a display substrate SUBd serving as a target substrate. In this embodiment, the display substrate SUBd has a plurality of signal lines DL formed thereon and includes a plurality of allocation areas RA and a plurality of standby areas BA.

[0271] The multiple allocation areas RA and spare areas BA are arranged in an array on the display substrate SUBd and are used to receive the LED chips being transferred in bulk. In this embodiment, the spare areas BA are arranged in an alternating pattern with the allocation areas RA. For example, as shown in Figure 14A , in the display substrate SUBd, each allocation area RA is adjacent to a spare area BA in the column direction. That is, in the column direction, a spare area BA is located between each allocation area RA.

[0272] It should be noted that while this embodiment depicts a spare area BA having a shorter spacing from one of the two adjacent allocation areas RA, the present disclosure is not limited to this. Taking FIG. 14A as an example, each spare area BA is adjacent to the upper allocation area RA but has a spacing from the lower allocation area RA. In other embodiments, the spare area BA may also be configured to be adjacent to both the upper and lower allocation areas RA (as further described in subsequent embodiments).

[0273] In addition, while FIG. 14A illustrates the spare areas BA interleaved with the configuration areas RA in a one-to-one arrangement along the column direction, the present disclosure is not limited thereto. In some embodiments, the spare areas BA may be located only in the peripheral or central areas of the display substrate SUBd. In practice, they can be located in areas more prone to failures, depending on the designer's needs.

[0274] Figures 14B and 14C illustrate an embodiment of the structural configuration of a display panel formed after a display substrate SUBd receives mass-transferred LED chips CP, wherein the display panel 50n of Figure 14B shows a state in which none of the LED chips CP have failed after the mass transfer, and the display panel 50d of Figure 14C shows a state in which some LED chips CP have failed after the mass transfer and have been repaired using the spare area BA.

[0275] Referring first to Figure 14B , in this embodiment, the LED chips CP include a red LED chip CPr, a green LED chip CPg, and a blue LED chip CPb. Therefore, the configuration area RA in this embodiment can be configured to include three types of configuration areas: a plurality of blue configuration areas RAb, a plurality of red configuration areas RAr, and a plurality of green configuration areas RAg. The blue configuration areas RAb are used to receive the blue LED chips CPb, the red configuration areas RAr are used to receive the red LED chips CPr, and the green configuration areas RAg are used to receive the green LED chips CPg. As previously described, the plurality of blue configuration areas RAb, the plurality of red configuration areas RAr, and the plurality of green configuration areas RAg are also arranged separately on the display substrate SUBd.

[0276] Incidentally, the red LED chip CPr, green LED chip CPg and blue LED chip mentioned here can also be understood as LED chips whose emission wavelengths are respectively in the red wavelength range, green wavelength range and blue wavelength range, which needs to be explained here first.

[0277] When an arrangement area RA receives LED chips CP emitting light of different colors, three adjacent arrangement areas RA receiving LED chips CP emitting light of different colors can be referred to as a pixel arrangement area. The three adjacent LED chips CP emitting light of different colors within this pixel arrangement area are considered a pixel. In other words, each pixel includes a blue LED chip CPb, a red LED chip CPr, and a green LED chip CPg, but this is not limited to this. In other embodiments, a pixel may include more than three LED chips CP.

[0278] Multiple spare areas BA are disposed on the display substrate SUBd and are adjacent to the configuration areas RA. As shown in FIG14B , each spare area BA is disposed below each configuration area RA. However, this embodiment is not limited thereto. Each spare area BA may also be disposed above each configuration area RA (not shown). The spare areas BA may also be electrically connected to the LED chips CP.

[0279] In an embodiment where the configuration area RA is used to receive LED chips CP emitting different colors of light, the multiple spare areas BA also include the following three types of configuration areas: multiple blue spare areas BAb, multiple red spare areas BAr, and multiple green spare areas BAg. The blue spare areas BAb are adjacent to the blue configuration area RAb and are used to receive blue LED chips CPb. The red spare areas BAr are adjacent to the red configuration area RAr and are used to receive red LED chips CPr. The green spare areas BAg are adjacent to the green configuration area RAg and are used to receive green LED chips CPg. Therefore, each pixel configuration area has three spare areas BAr, BAg, and BAb corresponding to the three configuration areas RAr, RAg, and RAb.

[0280] In FIG14B , since the LED chips CP on the display substrate SUBd are determined to be free of LED chip failure or damage after passing through a mass detection process, all LED chips CP on the display panel 50n are configured within the configuration area RA and are electrically connected to the corresponding signal lines DL through the configuration area RA.

[0281] On the other hand, referring to FIG. 14C , if some LED chips CP are detected to be damaged during the inspection process, and such LED chips CP are identified as being in a defective state, the LED chips identified as being in a defective state are indicated by the symbol "BCP". Subsequently, through a repair process, a new LED chip (indicated by the symbol "NCP") will be configured in the spare area BA adjacent to the configuration area RA where the defective LED chip BCP exists to replace the defective LED chip BCP.

[0282] For example, as shown in Figure 14C , if the defective LED chips BCP are green LED chips BCPg and red LED chips BCPr, during the repair process, a new green LED chip NCPg and a new red LED chip NCPr are placed in the corresponding green spare area BAg and red spare area BAr, respectively. This eliminates the need to remove defective LED chips and allows new LED chips to be directly installed on the target substrate, achieving the beneficial effect of rapid repair.

[0283] FIG14D illustrates another structural configuration of a display panel according to an embodiment of the present disclosure. Referring to FIG14D , the primary difference between this embodiment and the aforementioned FIG14B and FIG14C is that each spare area BAr, BAg, and BAb in the display panel 60d of this embodiment is adjacent to the two nearest configuration areas RAr, RAg, and RAb, respectively, along the column direction. In other words, two adjacent configuration areas RAr / RAg / RAb receiving LED chips CPr / CPg / CPb emitting the same color light share a spare area BAr / BAg / BAb. In other words, two adjacent pixel configuration areas share three spare areas BAr, BAg, and BAb. Specifically, as shown in FIG14D , a blue spare area BAb is located between two blue configuration areas RAb arranged along the column direction on the display substrate SUBd'; a red spare area BAr is located between two red configuration areas RAr arranged along the column direction on the display substrate SUBd'; and a green spare area BAg is located between two green configuration areas RAg arranged along the column direction on the display substrate SUBd'. However, the present embodiment is not limited to this configuration.

[0284] Therefore, through the configuration of this embodiment, the LED chips can be arranged more densely on the display substrate SUBd, thereby reducing the size of the display panel.

[0285] To summarize, through the structural configuration of the display panel and its display substrate of the embodiment of the present invention, regardless of whether there is an LED chip BCP in a defective state in the configuration area RA located above or below a spare area BA, a new LED chip NCP can be received by the adjacent spare area BA to replace the LED chip BCP in a defective state, thereby eliminating the process of removing the LED chip in a defective state and directly installing the corresponding new LED chip on the target substrate, thereby achieving the beneficial effect of quick repair and reducing the size design of the target substrate by sharing the spare area.

[0286] As previously mentioned, the transferred LED chips undergo further inspection and repair processes during the manufacturing process. However, the equipment used to handle and place LED chips and the solder used for reflow soldering often face limitations when applied to small-sized LEDs, making repair difficult. Figures 15A through 15C illustrate various structural configurations of display panels after mass transfer. These configurations ensure that even defective LED chips can continue to emit light, avoiding the difficulty of repair.

[0287] 15A and 15B , this embodiment illustrates a schematic structural configuration diagram of a display substrate SUBd serving as a target substrate. In this embodiment, a plurality of signal lines DL are formed on the display substrate SUBd″, and the display substrate SUBd″ includes a plurality of pixel configuration areas PRA.

[0288] A plurality of pixel configuration areas PRA are arranged in an array on the display substrate SUBd", and are used to receive a plurality of LED chips CP that are transferred in large quantities. Specifically, each of the pixel configuration areas PRA is configured with a plurality of LED chips CP. Moreover, the so-called pixel configuration area PRA is an area for receiving three LED chips CP that emit light of different colors. Three adjacent LED chips CP that emit light of different colors within the pixel configuration area PRA are regarded as one pixel. In other words, each pixel includes at least one blue LED chip CPb, at least one red LED chip CPr, and at least one green LED chip CPg, but is not limited to this.

[0289] Each pixel configuration area PRA has the following three types of configuration areas: the first chip configuration area CRA1, the second chip configuration area CRA2, and the third chip configuration area CRA3. The first chip configuration area CRA1 can be configured to accommodate two LED chips CP with a first wavelength in each row, the second chip configuration area CRA2 can be configured to accommodate two LED chips CP with a second wavelength in each row, and the third chip configuration area CRA3 can be configured to accommodate two LED chips CP with a third wavelength in each row. Specifically, in FIG15B , the first chip configuration area CRA1 has two LED chips CP with a first wavelength arranged horizontally and two LED chips CP with a first wavelength arranged vertically; in FIG15B , the second chip configuration area CRA2 has two LED chips CP with a second wavelength arranged horizontally and two LED chips CP with a second wavelength arranged vertically; and in FIG15B , the third chip configuration area CRA3 has two LED chips CP with a third wavelength arranged horizontally and two LED chips CP with a third wavelength arranged vertically.

[0290] Each pixel arrangement area PRA includes a first chip arrangement area CRA1, two second chip arrangement areas CRA2, and a third chip arrangement area CRA3. Two adjacent sides CRA1S1 and CRA1S2 of the first chip arrangement area CRA1 correspond to one side CRA2S1 of the two second chip arrangement areas CRA2, respectively. Two adjacent sides CRA3S1 and CRA3S2 of the third chip arrangement area CRA3 correspond to the other side CRA2S2 of the two second chip arrangement areas CRA2, respectively. Specifically, taking FIG. 15A as an example, one side CRA2S1 of each second chip arrangement area CRA2 is adjacent to the other side CRA2S2. The first chip arrangement area CRA1 and any second chip arrangement area CRA2 are located on the same imaginary line IL. The first chip arrangement area CRA1 and the third chip arrangement area CRA3 are arranged diagonally, and the two second chip arrangement areas CRA2 are also arranged diagonally.

[0291] Depending on the technology of LEDs, the number of LED chips CP that emit different colors of light may also vary. Taking FIG15B as an example, each of the pixel configuration areas PRA of the display panel 70d of this embodiment may be configured with eight blue LED chips CPb, four red LED chips CPr, and four green LED chips CPg. Taking FIG15C as an example, each of the pixel configuration areas PRA of the display panel 80d of this embodiment may be configured with four blue LED chips CPb, eight red LED chips CPr, and four green LED chips CPg.

[0292] In Figure 15B, the LED chip CP with the first wavelength is the red light receiving LED chip CPr, so the first chip configuration area CRA1 is also called the red light chip configuration area, the LED chip CP with the second wavelength is the blue light receiving LED chip CPb, so the second chip configuration area CRA2 is also called the blue light chip configuration area, and the LED chip CP with the third wavelength is the green light receiving LED chip CPg, so the third chip configuration area CRA3 is also called the green light chip configuration area.

[0293] In FIG15B , the LED technology used is to produce white light by exciting three-primary color phosphors (RGB QD powder) with UV LEDs. Due to the poor conversion efficiency of quantum dot blue (QD Blue), the second chip configuration area CRA2, which has a larger number of pixels in the pixel configuration area PRA, is used as the blue light chip configuration area to increase the number of blue light LED chips CPb, thereby improving the problem of poor conversion efficiency of quantum dot blue (QD Blue).

[0294] In Figure 15C, the LED chip CP with the first wavelength is the blue light receiving LED chip CPb, so the first chip configuration area CRA1 is also called the blue light chip configuration area, the LED chip CP with the second wavelength is the red light receiving LED chip CPr, so the second chip configuration area CRA2 is also called the red light chip configuration area, and the LED chip CP with the third wavelength is the green light receiving LED chip CPg, so the third chip configuration area CRA3 is also called the green light chip configuration area.

[0295] In FIG15C , the LED technology used is RGB LED. Since the miniaturization efficiency of red LEDs is relatively low, the second chip configuration area CRA2, which has a larger number in the pixel configuration area PRA, is used as the red chip configuration area to increase the number of red LED chips CPr, thereby improving the problem of poor miniaturization efficiency of red LEDs.

[0296] It should be noted that although the present embodiment shows that each pixel arrangement area PRA has the same pitch, the present disclosure is not limited thereto and the pitch can be adjusted according to user needs.

[0297] Figure 15A shows an embodiment of the structural configuration of the pixel configuration area PRA on the display substrate SUBd". Figures 15B and 15C show an embodiment of the structural configuration of the display panel formed after the display substrate SUBd" receives the massively transferred LED chips CP. The display panel in the figure shows a state in which none of the LED chips CP after the massive transfer have failed.

[0298] As mentioned above, the red LED chip CPr, green LED chip CPg and blue LED chip CPb described herein can also be understood as LED chips whose emission wavelengths are respectively in the red, green and blue wavelength ranges.

[0299] In FIG. 15B and FIG. 15C , all LED chips CP are respectively arranged in a pixel arrangement region PRA on a display substrate SUBd″, and are electrically connected to corresponding signal lines DL through the pixel arrangement region PRA.

[0300] If the LED chip CP is detected to be damaged during the inspection process and the LED chip CP is identified as being in a bad state, the remaining good LED chips in the same chip configuration area as the LED chip CP identified as being in a bad state can still assist in emitting light, thereby eliminating the removal process and the repair process. Therefore, since there is no need to use equipment for taking and placing LED chips, and no need for reflow soldering, problems that are difficult to repair are avoided. For example, although not shown in the figure, assuming that there is a LED chip CP with a first wavelength (receiving red light LED chip CPr) in the first chip configuration area CRA1 (red light chip configuration area) in Figure 15B that fails, even if the failed LED chip CP is not replaced, the other three good LED chips CP with a first wavelength (receiving red light LED chip CPr) in the same first chip configuration area CRA1 can still assist in emitting light. Therefore, the same applies even if it occurs in the second chip configuration area CRA2 or the third chip configuration area CRA3.

[0301] Furthermore, the display panel in Figures 15B and 15C may further include a color gamut control unit gc, which electrically connects the plurality of LED chips CP via a plurality of signal lines DL to adjust the brightness of at least one of the plurality of LED chips CP. Specifically, if an LED chip CP is detected damaged during the inspection process, resulting in the LED chip CP being deemed defective, the color gamut control unit gc can still control the brightness (e.g., increase the brightness) of the remaining good LED chips located in the same chip configuration area as the defective LED chip CP to assist in illumination, thereby eliminating the need for removal and repair processes. Thus, since equipment for removing and placing LED chips is not required, and reflow soldering is not required, the problem of difficult repairs is avoided.

[0302] To sum up, through the structural configuration of the display panel and its display substrate in the embodiment of the present invention, no matter which LED chip CP located in the pixel configuration area PRA is identified as being in a bad state, the remaining LED chips in a good state located in the same chip configuration area as the LED chip CP identified as being in a bad state can be used to assist in emitting light, eliminating the process of removing the LED chips in a bad state and directly utilizing the LED chips originally configured on the display substrate, thereby achieving the beneficial effect of quick repair and avoiding the occurrence of problems that are difficult to repair.

[0303] Figure 16 is a schematic diagram of an electrical detection device according to an embodiment of the present disclosure. Referring to Figure 16, the present embodiment relates to an electrical detection device 400, which is used to detect the electrical properties (such as current characteristics, voltage characteristics and / or lighting characteristics, etc.) of at least one target object on a substrate 410. The target object CP may be, for example, a small-sized electronic component such as an LED chip, specifically, a sub-micron light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED), but the present disclosure is not limited to this. The electrical detection device 400 of this embodiment is particularly suitable for electrical detection of vertical Micro LED chips in the manufacturing process (especially the stage between mass transfer and mounting the Micro LED chip on the substrate). In other embodiments, the electrical detection 400 can also be used to detect the electrical properties of other types of target objects CP besides LED chips. In one embodiment, the substrate 410 may be a target substrate for carrying the transferred target object CP.

[0304] The electrical testing device 400 of this embodiment includes a substrate 410, a fixture 420, a testing unit 430, a control unit 440, and a power supply unit 450. In this embodiment, the substrate 410 is used to support a plurality of transferred target objects CP, such as vertical Micro LED chips (hereinafter referred to as LED chips). Therefore, the electrical testing device 400 can be used to test the electrical properties of a large number of transferred vertical Micro LED chips.

[0305] The fixture 420 is positioned opposite the substrate 410 and has a light-transmissive conductive structure. During electrical testing, the fixture 420, in conjunction with the substrate 410 serving as the lower electrode, applies a test voltage to generate a voltage differential between the upper and lower electrodes of the LED chip, thereby driving the LED chip.

[0306] The detection part 430 is arranged relative to the substrate 410 and the fixture part 420 so that the detection range can cover at least a portion of the substrate 410 and the fixture part 420, wherein the detection part 430 is used to capture the electrical characteristics of the substrate 410 and the fixture part 420. In some embodiments, the detection part 430 may include one or more image capture devices. During the electrical detection process, a normal LED chip will be illuminated in response to the detection voltage, so that the light beam can pass from the fixture part 120 toward the detection part 430. The detection part 430 can capture the brightness data of the LED chip as a basis for detection judgment. In other words, the electrical characteristics may be, for example, the luminous brightness of the LED chip after it is illuminated in response to the detection voltage.

[0307] In some embodiments, the image capture device may be, for example, an optical microscope, a charge coupled device (CCD) image sensor, a complementary metal-oxide semiconductor (CMOS) image sensor, and an industrial camera, or a combination thereof, and the present disclosure is not limited thereto.

[0308] The control unit 440 is coupled to the substrate 410, the fixture unit 420, the testing unit 430, and the power supply unit 450, and is used to control the operation of the testing unit 430 and the power supply unit 450. In some embodiments, the control unit 440 can be implemented using hardware, firmware, or software, and is not necessarily located within the electrical testing device 400. For example, the control unit 440 can be implemented using an external computer, which can transmit signals to the various modules in the electrical testing device 400 via a specific transmission interface to achieve control.

[0309] In this embodiment, the fixture part 420 is connected to the power supply part 450, and the power supply part 450 supplies the input of the detection voltage and current. When the electrical detection device 400 performs electrical detection on the LED chip (such as lighting test), the fixture part 420 can be used with a conductive substrate 410 (as a lower electrode) that carries a large number of transferred LED chips. Specifically, during the lighting test, the electrical detection device 400 captures the image through the detection part 430. The detection part 430 is set on one side of the transparent fixture part 420 (for example, the position above the figure), and the light source of the LED chip after being illuminated can pass through the transparent fixture part 420 and be captured by the detection part 430. The captured detection data can be analyzed by the control part 440. For example, the control part 140 sets the grayscale value of the image within a unit area, and judges whether the LED chip is illuminated by the difference in grayscale value.

[0310] The following describes an embodiment of the fixture and the structure of the vertical Micro LED chip disclosed herein.

[0311] Figures 17A and 17B are schematic diagrams of the structure of the fixture portion of an embodiment of the present disclosure, with Figure 17A being a top-down schematic diagram of the fixture portion, and Figure 17B being a cross-sectional schematic diagram of the fixture portion. Referring to both Figures 17A and 17B, the fixture portion 420 of this embodiment is, for example, a probe unit PU. Structurally, the probe unit PU comprises a contact portion CT and a conductive portion CON. The contact portion CT has a plurality of raised structures PS, the arrangement of which corresponds to the arrangement of the LED chips on the substrate 410. When the contact portion CT contacts the LED chip, each raised structure PS electrically connects to the upper electrode of the corresponding LED chip. The conductive portion CON is disposed in the peripheral area of ​​the contact portion CT to transmit / conduct the detection voltage received from the power supply to the contact portion CT.

[0312] From the configuration point of view, the fixture unit PU includes a light-transmitting substrate 422 and a light-transmitting upper electrode fixture 424. The raised structure PS is located on the side of the upper electrode fixture 424 close to the LED chip, wherein the upper electrode fixture 424 can be used to electrically connect to the upper electrode of the LED chip. The upper electrode of each LED chip and its position can be customized to the light-transmitting upper electrode fixture 424. The electrical detection device 400 can generate a voltage difference between the upper and lower electrodes by energizing the fixture part 420 and the lower electrode, thereby driving the LED chip to emit light. After the light beam passes through the top of the fixture part 420, the brightness of the LED chip after the mass transfer is detected by the detection part 430. In some embodiments, the light-transmitting substrate 422 is, for example, a glass substrate, which is not limited by the present disclosure.

[0313] More specifically, in the upper electrode jig 424, each protrusion structure PS may be composed of, for example, a photoresist material 4241 and a conductive film 4242. The photoresist material 4241 is formed at a certain thickness on one side of the transparent substrate 422, and the conductive film 4242 covers the photoresist material 4241 and the surface of the transparent substrate 422. The photoresist material 4241 and the conductive film 4242 covering it form the protrusion structure PS. In some embodiments, the conductive film 4242 may be, for example, a high-transmittance ITO conductive film, but the present disclosure is not limited thereto.

[0314] FIG18A to FIG18C are schematic diagrams of the detection process of the electrical detection device according to different embodiments of the present disclosure. Please first refer to FIG18A , which shows that a plurality of vertical Micro LED chips 20a (hereinafter referred to as LED chips 20a) are arranged on a substrate 410a after mass transfer, wherein the substrate 410a may be, for example, the target substrate SUBt of the aforementioned embodiment, but the present disclosure is not limited thereto. The LED chip 20a, for example, includes a light-emitting layer 21, a plurality of metal layers 22-24, and a connecting layer 25. The metal layer 22 is arranged on one side of the light-emitting layer 21 (the upper side in this embodiment) and serves as the upper electrode of the LED chip 20a (hereinafter referred to as the upper electrode 22). The metal layer 23 is arranged on the other side opposite to the light-emitting layer 21, and is connected to the metal layer 24 on the side away from the light-emitting layer 21 through the connecting layer 25. When the LED chip 20a is placed on the substrate 410a after mass transfer, the metal layer 24 of the LED chip 20a is electrically connected to the substrate 410a, so that the substrate 410a can be regarded as the lower electrode of the LED chip 20a. In this embodiment, the upper electrode 22 is, for example, an N-pole, and the lower electrode is, for example, a P-pole, but the present disclosure is not limited to this.

[0315] Since the upper electrode 22 of the LED chip 20a cannot be electrically tested after mass transfer, the fixture unit PU as described in the embodiments of Figures 17A and 17B must be used in the electrical testing process, and the electrical connection with the upper electrode 22 of the LED chip 20a is achieved through the protruding structure PS. After the protruding structure PS of the upper electrode fixture 424 contacts the upper electrode 22 and is energized, it can be combined with the substrate 410a serving as the lower electrode to generate a voltage difference between the two electrodes of the LED chip 20a, thereby achieving electrical testing of the LED chip 20a.

[0316] In some embodiments, the metal layer 23 may be composed of multiple layers of different metal materials. These metal materials may be, for example, indium, silver, or one or more other metal materials with similar or similar properties, but the present disclosure is not limited thereto. Furthermore, in embodiments where the metal layer 23 is composed of multiple layers of metal materials, the different metal materials may have different cross-sectional areas and different stacking orders.

[0317] In some embodiments, the connection layer 25 may be made of ITO material, but the present disclosure is not limited thereto.

[0318] Referring next to FIG. 18B , FIG. 18B shows a plurality of vertical Micro LED chips 20b (hereinafter referred to as LED chips 20b) disposed on a substrate 410b after mass transfer. The substrate 410b may be, for example, the entire array substrate SUBa of the aforementioned embodiment, but the present disclosure is not limited thereto. The LED chip 20b includes, for example, a light-emitting layer 21 and a plurality of metal layers 22 and 23. The metal layer 22 is disposed on one side of the light-emitting layer 21 (the upper side in this embodiment) and serves as the upper electrode of the LED chip 20b (hereinafter referred to as the upper electrode 22). The metal layer 23 is disposed on the opposite side of the light-emitting layer 21. When the LED chip 20b is placed on the substrate 410b after mass transfer, the metal layer 23 of the LED chip 20b contacts the bottom surface of the corresponding slot of the substrate 410b. The portion of the substrate 410b that contacts the metal layer 23 can be considered the lower electrode of the LED chip 20b. In this embodiment, the upper electrode 22 is, for example, an N-pole, and the lower electrode is, for example, a P-pole, but the present disclosure is not limited thereto.

[0319] In the process of performing electrical testing on the LED chip 20b of this embodiment, by using the fixture unit PU as described in the embodiments of Figures 17A and 17B, electrical connection with the upper electrode 22 of the LED chip 20 can be achieved through the protruding structure PS, wherein the upper electrode fixture 424, after contacting the upper electrode 22 and being energized, can be combined with the substrate 410b serving as the lower electrode to generate a voltage difference between the two electrodes of the LED chip 20b, thereby achieving electrical testing of the LED chip 20b.

[0320] Furthermore, in this embodiment, a conductive layer CL is provided on the substrate 410b. The conductive layer CL is continuously formed on the surface of the substrate 410b (including the surface within the slot), so that when the LED chip 20b is placed in the slot, the conductive layer CL can be electrically connected to the metal layer 23. Therefore, during electrical testing, a voltage can be applied to the fixture unit PU and the substrate 410b to generate a voltage difference between the two electrodes of the chip 20b. In some embodiments, the conductive layer CL can be, for example, ITO or IZO formed on the surface of the substrate 410b, but the present disclosure is not limited thereto.

[0321] In this embodiment, the metal layer 23 may include a first metal layer 231 and a second metal layer 232 arranged in a stacked manner, wherein the first metal layer 231 is located on a side close to the light-emitting layer 21. In some embodiments, the first metal layer 231 may be, for example, copper or other metal materials with high thermal conductivity, and the second metal layer 232 may be, for example, a magnetic material such as iron or nickel, but the present disclosure is not limited thereto.

[0322] 18C , which shows that a plurality of LED chips 20 b are disposed on a substrate 410 c after mass transfer, wherein the substrate 410 c may be, for example, the entire array substrate SUBa of the aforementioned embodiment, but the present disclosure is not limited thereto.

[0323] This embodiment is substantially similar to the embodiment shown in FIG18B , so similar portions can be referred to the description of the aforementioned embodiment and will not be repeated here. The primary difference between this embodiment and the embodiment shown in FIG18B is that substrate 410c in this embodiment has a microporous structure VH similar to that shown in FIG11E . The conductive layer CL in this embodiment is formed at the bottom of the grooves in substrate 410c and extends through the microporous structure VH to the back surface of substrate 410b. This increases the flexibility of the externally controlled electrical connection configuration of the conductive layer CL.

[0324] It should be noted that Figures 11E, 18B, and 18C illustrate the configurations of the conductive layer CL according to various embodiments of the present disclosure, but the present disclosure is not limited thereto. The aforementioned embodiments demonstrate that, in the full array substrate structure proposed in the present disclosure, the conductive layer CL can be formed only on a portion of the substrate surface, or exposed only on a portion of the substrate surface, to electrically connect to the corresponding LED chips in the slots and / or to external power supply circuits.

[0325] The electrical testing device 400 can be operated using an electrical testing method as shown in FIG19 , wherein FIG19 is a flowchart of the steps of the electrical testing method according to an embodiment of the present disclosure. Referring to FIG16 and FIG19 , the electrical testing of this embodiment includes: performing position detection on a target object CP (e.g., the LED chip 20a shown in FIG18A or the LED chip 20b shown in FIG18B and FIG18C ) on a substrate 410 to obtain position information (step S310); adjusting the fixture portion 420 to the corresponding position of the target object CP based on the position information (step S320); controlling the power supply portion 450 to supply voltage and current to the upper and lower electrodes of the target object CP to perform an electrical test (step S330); during the electrical test, capturing electrical characteristics by the detection portion 430 (step S340); and analyzing the captured detection data by the control portion 440 to determine the operating status of the target object CP (step S350).

[0326] More specifically, the process of performing electrical testing on the LED chips 20a / 20b of Figures 18A to 18C using the jig unit PU of Figures 17A and 17B is used as an example. In step S310, after the LED chips 20a / 20b are placed on the substrates 410a / 410b / 410c via mass transfer, the position of the LED chips 20a / 20b is detected to obtain position information. In step S320, the top electrode jig 424 of the jig unit 420 is adjusted to the corresponding position of the LED chips 20a / 20b based on the position information, so that the protrusions PS on the top electrode jig 424 are electrically connected to the top electrodes 22 of the LED chips 20a / 20b. In step S330, power is supplied to the conductive portion CON and substrates 410a / 410b / 410c of the fixture unit PU via the power supply unit 450. This power is applied to the upper electrodes 22 of the LED chips 20a / 20b through the conductive portion CON and the protrusions PS. Power is also applied to the lower electrodes 410a / 410b / 410c, thereby illuminating the LED chips 20a / 20b. In steps S340 and S350, after the detection unit 430 captures an image, the control unit 440 analyzes the captured image data and determines whether the LED chips 20a / 20b are illuminated.

[0327] In summary, the electrical testing device disclosed herein can be used to test the electrical properties of vertical Micro LED chips after mass transfer. Existing technologies do not specifically test the electrical properties of vertical Micro LED chips after mass transfer. This device utilizes a light-transmitting upper electrode fixture, which, when powered, generates a voltage difference with the lower electrode to drive the vertical Micro LED chips to emit light. After the light beam passes through the fixture, the testing unit performs brightness testing on the vertical Micro LED chips after mass transfer.

[0328] Although the present disclosure has been disclosed using the above-mentioned embodiments, they are not intended to limit the present disclosure. Any changes and modifications made by any person skilled in the art relative to the above-mentioned embodiments without departing from the spirit and scope of the present disclosure still fall within the technical scope protected by the present disclosure. Therefore, the scope of protection of the present disclosure shall be based on the definition of the attached claims.

Claims

1. A mass transfer device, characterized in that: Include: A carrying portion, used for carrying the first substrate and the second substrate; A pick-and-place portion, disposed opposite to the carrying portion, for taking a target object from the first substrate or placing the target object on the second substrate through control; A detection unit, arranged relative to the carrying unit and the pick-and-place unit, for detecting a relative position between at least one of the first substrate and the second substrate and the pick-and-place unit, and for generating relative position information for controlling the movement of the carrying unit and the pick-and-place unit; A control unit, coupled to the carrying unit, the placing unit and the detection unit, and configured to control the operation of the carrying unit and the placing unit according to the relative position information; as well as The action parts are arranged in an array to apply an action force to at least one of the first substrate and the second substrate on the carrying part, so as to adjust the position of the target object on the substrate to which the action force is applied.

2. The mass transfer device according to claim 1, characterized in that: When the pick-and-place unit places the target object on the second substrate, the carrying unit is controlled to output energy to the second substrate so that the adhesion force of the target object to the second substrate is greater than the adhesion force of the target object to the pick-and-place unit.

3. The mass transfer device according to claim 1, wherein: The alignment action portion applies suction to the target object on one of the substrates through a closed channel formed by the carrying portion and one of the substrates.

4. The mass transfer device according to claim 1, wherein: The bearing portion comprises: A carrying platform, used for carrying at least one of the first substrate and the second substrate; as well as A heating component contacts the carrying platform and is controlled by the control unit to heat the carrying platform.

5. The mass transfer device according to claim 4, characterized in that: The bearing portion further comprises: The movement control mechanism is connected to the carrying platform and is used to drive the carrying platform to move on the first plane.

6. The mass transfer device according to claim 1, wherein: The pick-and-place unit comprises: A movement control mechanism for moving in three-dimensional space under control; a clamping mechanism driven by the movement of the movement control mechanism; and an adhesive substrate configured to be secured to a clamping mechanism, When the pick-and-place unit is controlled to obtain the target object from the first substrate, the movement control mechanism moves to a position aligned with the first substrate according to the relative position information, and drives the adhesive substrate to contact the target object on the first substrate.

7. The mass transfer device according to claim 6, characterized in that: The adhesive substrate comprises: Rigid layer; as well as The adhesive layer is disposed on the rigid layer, and the side away from the rigid layer faces the bearing part, wherein the adhesive layer has a plurality of first protrusion structures arranged at intervals, and each of the first protrusion structures has a first cross section for contacting the target object.

8. The mass transfer device according to claim 7, wherein: The adhesive layer further has a plurality of second protrusion structures which are arranged at intervals and arranged in an array on the rigid layer, wherein each of the second protrusion structures has a second cross section for supporting the first protrusion structure.

9. The mass transfer device according to claim 8, characterized in that: The area of ​​the first cross section is smaller than the area of ​​the second cross section.

10. The mass transfer device according to claim 6, wherein: The movement control mechanism is a multi-axis movement control mechanism, wherein the multi-axis movement control mechanism has a first movement mode when moving, and when the multi-axis movement control mechanism moves in the first movement mode, its three-dimensional coordinates are changed simultaneously.

11. The mass transfer device according to claim 1, wherein: The arranging action part comprises: A plurality of vibration mechanisms are used to cause vibrations in different directions, wherein at least two of the different directions are not parallel.

12. The mass transfer device according to claim 11, wherein: The plurality of vibration mechanisms include: A first vibration mechanism, for causing vibration in a first direction; A second vibration mechanism, for causing vibration in a second direction; and The third vibration mechanism is used to cause vibration in the third direction. Wherein, any one of the first to third directions is substantially parallel to the normal direction of the plane formed by the other two directions.

13. The mass transfer device according to claim 1, wherein: The arranging action part comprises: The electromagnetic control module is used for providing electric power to at least one of the first substrate and the second substrate, so that the at least one substrate generates magnetic force based on the electric power.

14. The mass transfer device according to claim 1, wherein: One of the first substrate and the second substrate is a full-column substrate, and the full-column substrate comprises a body and a plurality of slots formed on the body and arranged in an array.

15. The mass transfer device according to claim 14, wherein: At least one of the plurality of slots comprises the following structure: first bottom surface; A first side wall surrounds the first bottom surface, and a bottom of the first side wall is connected to the first bottom surface; A second bottom surface, one side of which is connected to the top of the first side wall; as well as a second side wall surrounding the periphery of the second bottom surface, and a bottom of the second side wall connected to the other side of the second bottom surface, Wherein, the sum of the heights of the first side wall and the second side wall is greater than the width of the first bottom surface.

16. The mass transfer device according to claim 14, wherein: At least one of the plurality of slots comprises the following structure: a first bottom surface; and A first side wall surrounds the first bottom surface, and a bottom of the first side wall is connected to the first bottom surface; as well as A plurality of micro-hole structures are respectively arranged corresponding to the slots and formed between the first bottom surface and the bottom of the body. Each of the microporous structures has a first opening and a second opening, the first opening is exposed to the first bottom surface, and the second opening is exposed to the bottom of the body.

17. The mass transfer device according to claim 14, wherein: At least one of the plurality of slots comprises the following structure: a first bottom surface; and The first side wall surrounds the first bottom surface, and the bottom of the first side wall is connected to the first bottom surface, wherein at least one side of the first side wall is not perpendicular to the first bottom surface.

18. The mass transfer device according to claim 14, wherein: The entire array of substrates further comprises: A plurality of material receiving portions are respectively formed at the bottom of the slots; and The magnetic structure is arranged in the plurality of material accommodating parts, and the magnetic properties of the curable magnetic material correspond to the magnetic properties of the plurality of LED chips.

19. The mass transfer device according to claim 15, wherein: The magnetic structure is formed by curing the magnetic material after injecting it into the material receiving portion.

20. The mass transfer device according to claim 14, wherein: The other of the first substrate and the second substrate is a redirecting substrate, and the predetermined direction in which the target object is arranged on the array substrate is opposite to the predetermined direction in which the target object is arranged on the redirecting substrate.

21. A mass transfer method, applicable to a mass transfer device comprising a pick-and-place unit and a carrier unit, wherein the carrier unit is used to carry a first substrate and a second substrate, characterized in that: The mass transfer method comprises: Applying a first force through the carrying portion to make the multiple targets fall into the multiple slots of the first substrate respectively; Controlling the pick-and-place unit to obtain the plurality of targets from the first substrate; Controlling the pick-and-place unit to place the obtained multiple targets on the second substrate; as well as A second force is applied through the carrying portion to make the adhesion force of the multiple targets to the second substrate greater than the adhesion force of the targets to the pick-and-place portion, so that the multiple targets are transferred from the pick-and-place portion to the second substrate.

22. The method for mass transfer according to claim 21, wherein: After the step of controlling the pick-and-place unit to obtain the plurality of target objects from the first substrate, the method further includes the following steps: Controlling the pick-and-place unit to place the obtained multiple targets on the redirection substrate; Moving and flipping the redirecting substrate so that the plurality of targets face the carrying portion; and The pick-and-place unit controls the redirection substrate to move toward the second substrate, and makes the plurality of targets contact the second substrate.

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