Chip bonding method, system, electronic device, and storage medium

By acquiring the pressure and position information of the bonding head, and combining it with the bonding material property database and sensor configuration, the pressure output and lifting motion of the bonding head are adjusted to achieve smooth and gradual pressure release. This solves the problem of stress concentration during the bonding process and improves bonding quality and product yield.

CN121054502BActive Publication Date: 2026-06-09GUANGZHOU AIFO LIGHT COMM TECH CO LTD
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Patent Information

Application Number
CN202511268072.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-05
Publication Date
2026-06-09
Estimated Expiration
2045-09-05

AI Technical Summary

Technical Problem

In existing technologies, stress concentration caused by the instantaneous release of bonding pressure during chip bonding can lead to material cracking or deformation and uneven bonding interfaces, affecting bonding quality and product yield.

Method used

By acquiring the pressure and position information of the bonding head, the pressure output and lifting motion of the bonding head are adjusted to release pressure according to a preset pressure reduction curve. Combined with the bonding material characteristic database and sensor configuration, a smooth and gradual pressure release is achieved.

Benefits of technology

This effectively avoids stress concentration, improves bonding quality and product yield, and ensures the uniformity of the bonding interface.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application provides a chip bonding method and system, electronic equipment and storage medium, and relates to the technical field of semiconductors. The current pressure information and position information of the bonding head are acquired, and the pressure output and lifting movement of the bonding head are adjusted according to the information, so that the bonding head releases pressure according to a preset pressure release curve. The method effectively solves the problems of stress concentration, material cracking or deformation of the bonding area and uneven bonding interface caused by instantaneous release of bonding pressure in the prior art. By introducing the preset pressure release curve, the application can realize smooth and gradual release of the bonding pressure, thereby significantly reducing the risk of stress concentration in the bonding process and improving the uniformity of the bonding interface and the bonding quality.
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Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a chip bonding method, system, electronic device, and storage medium. Background Technology

[0002] In semiconductor manufacturing, chip bonding is a critical process, widely used in silicon wafer bonding (such as bonding silicon wafers to silicon wafers or silicon wafers to other materials), microelectronic packaging (such as chip-to-substrate bonding), and MEMS device manufacturing (such as multilayer structure bonding). In these applications, bonding quality directly affects the performance and reliability of the final product. However, existing technologies generally suffer from a significant problem during bonding: if the bonding pressure is released instantaneously when the bonding head contacts the bonding material, it can lead to severe stress concentration in the bonding area. This stress concentration not only increases the risk of material cracking or deformation but also causes uneven bonding interfaces, thus seriously affecting bonding quality and product yield. Therefore, it is necessary to research a chip bonding method that avoids stress concentration in the bonding area caused by the instantaneous release of bonding pressure, thereby preventing problems that affect bonding quality.

[0003] There is currently no effective technical solution to the above problems. Summary of the Invention

[0004] The purpose of this application is to provide a chip bonding method, system, electronic device and storage medium, which aims to solve the problems of stress concentration, material cracking or deformation and uneven bonding interface caused by instantaneous release of bonding pressure in the prior art, thereby improving bonding quality and product yield.

[0005] This application provides a chip bonding method, including the following steps:

[0006] S1. Obtain the current pressure and position information of the bonding head;

[0007] S2. Based on the current pressure information and position information, adjust the pressure output and lifting movement of the bonding head so that the bonding head releases pressure according to a preset pressure reduction curve.

[0008] This technical solution can effectively avoid stress concentration caused by the instantaneous release of bonding pressure, thereby improving bonding quality and product yield.

[0009] Optionally, step S1 includes:

[0010] Obtain a pre-constructed database of bonding material properties, which includes the mechanical parameters, thermal parameters, and surface morphology characteristics of different bonding materials, as well as the pressure response characteristics and positional deformation characteristics of the bonding head when in contact with different bonding materials. The mechanical parameters, thermal parameters, and surface morphology characteristics directly determine the pressure response characteristics and positional deformation characteristics of the bonding head when in contact with different bonding materials.

[0011] The pressure response characteristics and positional deformation characteristics of the bonding head when in contact with different bonding materials are obtained from the bonding material property database.

[0012] Based on the pressure response characteristics and the position deformation characteristics, the configuration parameters of the pressure sensor and the position sensor adapted to different bonding materials are determined;

[0013] Based on the configuration parameters, the current pressure information and position information of the bonding head are obtained.

[0014] This technical solution enables the adaptive configuration of sensor parameters based on the characteristics of different bonding materials, thereby improving the accuracy of pressure and position information acquisition and ensuring precise control of the subsequent pressure release process.

[0015] Optionally, the configuration parameters include the pressure sensor's range, pressure sensor's sensitivity, pressure sensor's sampling frequency, position sensor's resolution, and position sensor's measurement range.

[0016] Optionally, the step of determining the configuration parameters of the pressure sensor and position sensor adapted to different bonding materials based on the pressure response characteristics and the position deformation characteristics includes:

[0017] Based on the pressure response characteristics and the position deformation characteristics, the configuration parameters of pressure sensors and position sensors adapted to different bonding materials are determined through a preset parameter table.

[0018] This technical solution simplifies the process of determining sensor configuration parameters, improves operational efficiency, and ensures configuration accuracy.

[0019] Optionally, the pre-generation step of the pressure drop curve includes:

[0020] Based on the bonding material property database, determine the type of pressure reduction curve that matches the bonding material properties;

[0021] Based on the aforementioned pressure reduction curve type, a preset pressure reduction curve is generated.

[0022] Optionally, the types of blood pressure reduction curves include: linear blood pressure reduction curves, exponential blood pressure reduction curves, piecewise blood pressure reduction curves, and S-shaped blood pressure reduction curves.

[0023] Optionally, step S2 includes:

[0024] Based on the current pressure information and position information, the contact state parameters between the bonding head and the bonding material are obtained. The contact state parameters include the contact area, contact pressure distribution, and material deformation rate.

[0025] Based on the contact state parameters and the preset pressure reduction curve, determine the adjustment amount of the bonding head pressure output and the adjustment amount of the lifting motion.

[0026] The pressure output and lifting motion of the bonding head are adjusted according to the adjustment amount of the pressure output and the adjustment amount of the lifting motion.

[0027] Secondly, this application provides a chip bonding system, including a pressure sensor array, a position sensor, a speed reduction device, a lifting motor, and a bonding head, all of which are respectively connected to a controller;

[0028] The pressure sensor array is used to measure the pressure information of the bonding head in real time and send the pressure information to the controller;

[0029] The position sensor is used to measure the position information of the bonding head in real time and send the position information to the controller;

[0030] The controller is used to receive the pressure information and the position information;

[0031] The deceleration device is installed in the lifting motor, which is connected to the bonding head. The lifting motor is used to drive the lifting movement of the bonding head. The controller is also used to adjust the pressure output and lifting movement of the bonding head according to the current pressure information and position information, so that the bonding head releases pressure according to a preset pressure reduction curve.

[0032] Thirdly, this application provides an electronic device including a processor and a memory, the memory storing computer-readable instructions that, when executed by the processor, perform the steps of a chip bonding method as described in any of the preceding claims.

[0033] Fourthly, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the steps of a chip bonding method as described in any of the preceding claims.

[0034] As described above, the chip bonding method, system, electronic device, and storage medium provided in this application acquire the current pressure and position information of the bonding head, and adjust the pressure output and lifting movement of the bonding head according to this information, so that the bonding head releases pressure according to a preset pressure reduction curve. This method effectively solves the problems of stress concentration, material cracking or deformation, and uneven bonding interface caused by instantaneous release of bonding pressure in the prior art. By introducing a preset pressure reduction curve, this application can achieve a smooth and gradual release of bonding pressure, thereby significantly reducing the risk of stress concentration during the bonding process and improving the uniformity of the bonding interface and the bonding quality.

[0035] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing embodiments of this application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings. Attached Figure Description

[0036] Figure 1 This is a flowchart of a chip bonding method provided in an embodiment of this application.

[0037] Figure 2 This is a schematic diagram of the chip bonding system provided in an embodiment of this application.

[0038] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0039] Labeling explanations: 21. Controller; 22. Pressure sensor array; 23. Position sensor; 24. Speed ​​reducer; 25. Lifting motor; 26. Bonding head; 3. Electronic equipment; 301. Processor; 302. Memory; 303. Communication bus. Detailed Implementation

[0040] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0041] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0042] Please refer to Figures 1-3 This application provides a chip bonding method, system, electronic device, and storage medium. By precisely controlling the pressure release during the bonding process, it effectively avoids the stress concentration problem caused by instantaneous pressure release in traditional methods, thereby significantly improving bonding quality and product yield.

[0043] This application provides a chip bonding method, including the following steps:

[0044] S1. Obtain the current pressure and position information of the bonding head 26;

[0045] S2. Based on the current pressure and position information, adjust the pressure output and lifting motion of the bonding head 26 so that the bonding head 26 releases pressure according to the preset pressure reduction curve.

[0046] Here, "pressure information" refers to the real-time pressure value that the bonding head 26 experiences or applies during the bonding process. "Position information" refers to the real-time position data of the bonding head 26 in the vertical direction, typically used to indicate the distance or contact depth between the bonding head 26 and the bonding material. "Pressure drop curve" refers to a pre-set trajectory used to guide the pressure change of the bonding head 26 over time or position during the bonding process, with the aim of achieving smooth and controlled pressure release.

[0047] Specifically, during the bonding process, when the bonding head 26 contacts the bonding material, the real-time pressure and position of the bonding head 26 are monitored. These data are compared with a preset pressure reduction curve. If the real-time pressure is higher than the expected value of the pressure reduction curve, the controller 21 issues a command to reduce the pressure output of the bonding head 26. Simultaneously, if the real-time position does not match the position corresponding to the pressure reduction curve, the lifting and lowering movement of the bonding head 26 is adjusted (e.g., slowly raising the bonding head 26 or slowing its descent) to ensure a smooth and gradual release of pressure. This coordinated adjustment mechanism ensures that the pressure release process of the bonding head 26 remains under control throughout the entire bonding process, thereby avoiding instantaneous impacts and stress concentration.

[0048] Compared with existing technologies, the core innovation of this application lies in the introduction of the concept of a "preset pressure reduction curve" and the realization of coordinated adjustment of the pressure output and lifting motion of the bonding head 26 through real-time feedback control, so as to accurately follow the pressure reduction curve. Traditional bonding methods often use simple pressure release mechanisms, such as directly withdrawing the bonding head 26 or instantly releasing the pressure, which can easily lead to stress concentration in the bonding area, thereby affecting bonding quality and product yield. This application obtains the current pressure and position information of the bonding head 26 and dynamically adjusts the pressure output and lifting motion of the bonding head 26 based on this information, making the pressure release process smooth and controllable. This method can significantly reduce stress concentration during the bonding process, improve the uniformity of the bonding interface, and thus improve bonding quality and product yield. For example, when bonding brittle materials, the method of this application can effectively avoid material cracking through a gentle pressure reduction curve, which is difficult to achieve with traditional methods. Therefore, the solution of this application can effectively avoid the stress concentration problem caused by instantaneous pressure release in traditional methods, thereby significantly improving bonding quality and product yield.

[0049] In some implementations, step S1 includes:

[0050] Obtain a pre-built database of bonding material properties. The database contains the mechanical parameters, thermal parameters, and surface morphology characteristics of different bonding materials, as well as the pressure response characteristics and position deformation characteristics of the bonding head 26 when it comes into contact with different bonding materials. The mechanical parameters, thermal parameters, and surface morphology characteristics directly determine the pressure response characteristics and position deformation characteristics of the bonding head 26 when it comes into contact with different bonding materials.

[0051] The pressure response characteristics and positional deformation characteristics of the bonding head 26 when in contact with different bonding materials are obtained from the bonding material property database.

[0052] Based on the pressure response characteristics and position deformation characteristics, the configuration parameters of the pressure sensor and position sensor 23 adapted to different bonding materials are determined;

[0053] Based on the configuration parameters, obtain the current pressure and position information of the bonding head 26.

[0054] Specifically, the bonding material property database can be understood as a pre-established set of information used to store and manage the properties of various bonding materials. This database aims to provide key parameters required during the bonding process to support accurate prediction and control of the behavior of the bonding head 26. These parameters include mechanical parameters such as the material's elastic modulus, Poisson's ratio, and yield strength, which directly affect the material's deformation behavior under pressure; thermal parameters such as the material's coefficient of thermal expansion, thermal conductivity, and specific heat capacity, which affect the material's dimensional stability and heat transfer efficiency under temperature changes; and surface morphology characteristics such as the material's surface roughness, smoothness, and microstructure, which affect the actual contact area and frictional characteristics between the bonding head 26 and the material. These parameters collectively determine the pressure response and positional deformation characteristics exhibited by the bonding head 26 when in contact with different bonding materials. For example, softer materials may experience greater deformation under the same pressure, while rougher surfaces may require higher initial pressure to establish effective contact.

[0055] Furthermore, obtaining the pressure response characteristics and positional deformation characteristics of the bonding head 26 when in contact with different bonding materials based on the bonding material characteristic database refers to obtaining the relationship between the pressure change of a specific bonding material and the output pressure of the bonding head 26 when in contact with it, as well as the relationship between the positional change of the bonding head 26 and the actual deformation of the material, by querying or analyzing the data stored in the database. These characteristics form the basis for subsequent sensor configuration.

[0056] Therefore, based on the pressure response characteristics and position deformation characteristics, the configuration parameters of the pressure sensor and position sensor 23 adapted to different bonding materials can be determined. These configuration parameters aim to optimize the sensor's measurement performance, enabling it to accurately and reliably capture minute pressure and position changes in different materials during the bonding process. For example, for materials with large deformation, a higher resolution position sensor 23 may be required; for materials with a wide pressure variation range, a pressure sensor with a wider measurement range may be required.

[0057] Finally, based on the configuration parameters, the current pressure and position information of the bonding head 26 can be obtained. This means that the sensor will be customized according to the material properties to ensure that the acquired data can accurately reflect the interaction between the bonding head 26 and the material, providing precise input for subsequent pressure output and lifting motion adjustment.

[0058] This application's solution effectively solves the problem of inaccurate data acquisition due to differences in material properties in traditional methods by introducing a bonding material property database and dynamically adjusting the configuration parameters of the pressure sensor and position sensor 23 based on this database. Specifically, the bonding material property database provides detailed behavioral patterns of different bonding materials under stress, heat, and surface contact, thus enabling the prediction of the pressure response and positional deformation when the bonding head 26 contacts a specific material. It is precisely this predictive capability that allows the system to select or adjust the sensor's range, sensitivity, and resolution configuration parameters based on these characteristics (this process can be performed by the operator by replacing the corresponding bonding head 26, each bonding head 26 integrating pressure and position sensors 23 with different configuration parameters), thereby ensuring that the sensors can always acquire data in optimal condition when facing different materials. This adaptive sensor configuration mechanism ensures higher accuracy and reliability of the acquired pressure and position information, laying a solid foundation for the precise control of the subsequent pressure output and lifting motion of the bonding head 26.

[0059] In some preferred embodiments, a specific example is given below. Suppose that two different types of chips need to be bonded: one is a silicon-based chip, which has high rigidity and a low coefficient of thermal expansion; the other is a gallium arsenide (GaAs)-based chip, which is relatively soft and has a high coefficient of thermal expansion.

[0060] Before bonding begins, the system first queries a pre-built bonding material property database for the mechanical, thermal, and surface morphology properties of silicon and gallium arsenide. For example, the database records that silicon has a Young's modulus of 130 GPa, a coefficient of thermal expansion of 2.6 ppm / K, and a surface roughness Ra of 0.5 nm; while gallium arsenide has a Young's modulus of 85 GPa, a coefficient of thermal expansion of 5.7 ppm / K, and a surface roughness Ra of 1.5 nm. Based on these parameters, the bonding material property database further provides typical pressure response curves (e.g., steep pressure-deformation curves) and positional deformation characteristics when the bonding head 26 contacts silicon, and typical pressure response curves (e.g., gentler pressure-deformation curves) and positional deformation characteristics when in contact with gallium arsenide.

[0061] When the chip to be bonded is identified as silicon, the system determines a set of configuration parameters for a pressure sensor and a position sensor 23 suitable for silicon based on the pressure response characteristics and position deformation characteristics of silicon in its database. For example, it might select a pressure sensor with a range of 0-100N and a sensitivity of 0.1N / mV, and a position sensor 23 with a resolution of 0.1μm and a measurement range of 0-500μm. The operator then selects a suitable bonding head 26 based on these configuration parameters.

[0062] When the system identifies that the chip to be bonded is gallium arsenide (GaAs), it determines another set of sensor configuration parameters suitable for GaAs based on the pressure response and position deformation characteristics of GaAs in the database. For example, it might select a pressure sensor with a range of 0-50N and a sensitivity of 0.05N / mV (to accommodate its relatively soft characteristics), and a position sensor 23 with a resolution of 0.05μm and a measurement range of 0-1000μm (to accommodate its potentially larger deformation). The operator then selects a suitable bonding head 26 based on these configuration parameters.

[0063] In this way, regardless of the bonding material, the pressure sensor and position sensor 23 can operate in the optimal configuration, thereby ensuring that the current pressure and position information of the bonding head 26 is highly accurate and reliable, providing a solid data foundation for the precise adjustment of the subsequent pressure output and lifting movement of the bonding head 26.

[0064] In some implementations, the configuration parameters include the pressure sensor's range, the pressure sensor's sensitivity, the pressure sensor's sampling frequency, the position sensor 23's resolution, and the position sensor 23's measurement range.

[0065] The range of a pressure sensor refers to the maximum and minimum pressure range that the sensor can accurately measure. The sensitivity of a pressure sensor refers to the degree to which its output signal changes with the input pressure; higher sensitivity helps to capture minute pressure changes, thus enabling finer pressure control. The sampling frequency of a pressure sensor refers to the number of times the sensor collects data per second; a higher sampling frequency provides more real-time pressure data, which is crucial for dynamic pressure adjustment.

[0066] Furthermore, the resolution of the position sensor 23 refers to the smallest position change that the position sensor 23 can distinguish. A high-resolution position sensor 23 can achieve precise control over the lifting and lowering movement of the bonding head 26, ensuring that the bonding head 26 moves along a preset trajectory. The measurement range of the position sensor 23 refers to the maximum and minimum distances that the position sensor 23 can measure.

[0067] In some embodiments, the step of determining the configuration parameters of the pressure sensor and position sensor 23 adapted to different bonding materials, based on pressure response characteristics and position deformation characteristics, includes:

[0068] Based on the pressure response characteristics and position deformation characteristics, the configuration parameters of the pressure sensor and position sensor 23 adapted to different bonding materials are determined through a preset parameter table.

[0069] This application's solution introduces a preset parameter table, enabling the pressure response and position deformation characteristics of a specific bonding material to be quickly and accurately matched to the current bonding material characteristics without complex real-time calculations or dynamic adjustments during the bonding process. This method leverages pre-accumulated knowledge and experience, transforming the complex parameter determination process into a simple lookup process, thereby ensuring optimal sensor operation under different material conditions.

[0070] The preset parameter table contains the correspondence between the pressure response characteristics and positional deformation characteristics of different bonding materials and the configuration parameters of the corresponding pressure sensor and position sensor 23. This preset parameter table can be constructed through offline experiments, simulation, or accumulation of empirical data.

[0071] In some implementations, the pre-generation step of the pressure drop curve includes:

[0072] Based on the bonding material property database, determine the type of pressure reduction curve that matches the bonding material properties;

[0073] Generate a preset pressure reduction curve based on the pressure reduction curve type.

[0074] Specifically, the bonding material property database stores the mechanical parameters, thermal parameters, and surface morphology characteristics of different bonding materials, as well as the pressure response and positional deformation characteristics of the bonding head 26 when in contact with different bonding materials. When determining the pressure reduction curve type that matches the bonding material properties, the most suitable pressure reduction curve form for the current bonding material can be selected based on these detailed material property data, using preset rules, algorithms, or lookup tables. For example, for brittle materials, a curve type that provides a smoother pressure release may be needed; for ductile materials, a faster pressure release may be permitted. Once the pressure reduction curve type is determined, a specific, preset pressure reduction curve can be generated based on that type and the specific bonding material parameters using mathematical models or parameterization methods. This curve will guide the bonding head 26 in releasing pressure during subsequent bonding processes.

[0075] In some preferred embodiments, a specific example is given below. Suppose that two chip materials with different properties need to be bonded: one is a high-hardness, brittle ceramic material, and the other is a flexible polymer material.

[0076] First, when bonding ceramic materials, the system queries a database of bonding material properties. This database records the mechanical, thermal, and surface morphology characteristics of the ceramic materials. Based on these characteristics, the system determines the type of pressure drop curve that matches the properties of the ceramic material. For example, due to the brittleness of ceramic materials, an S-shaped or exponential pressure drop curve might be selected to ensure slow and smooth pressure release, avoiding stress concentration that could lead to cracking. Subsequently, based on the selected S-shaped or exponential pressure drop curve type and the specific parameters of the ceramic material, a preset pressure drop curve with a specific slope and inflection point is generated.

[0077] When bonding polymer materials, the system queries the bonding material property database again. The database records the polymer material's low hardness and good ductility. Based on these properties, the system may determine whether a linear or segmented pressure drop curve is more suitable, as the polymer material can withstand relatively rapid pressure release. Then, according to the selected linear or segmented pressure drop curve type, a preset pressure drop curve suitable for the polymer material is generated. In this way, this application can dynamically generate the most suitable pressure drop curve based on the unique properties of different bonding materials, thereby ensuring the accuracy and reliability of the bonding process.

[0078] In some implementations, the types of blood pressure reduction curves include: linear blood pressure reduction curves, exponential blood pressure reduction curves, segmented blood pressure reduction curves, and S-shaped blood pressure reduction curves.

[0079] Specifically, a linear pressure drop curve refers to a pressure output of the bonding head 26 decreasing linearly with time or the distance the bonding head 26 descends. This is suitable for bonding materials with low sensitivity to pressure changes or requiring a stable pressure release process. An exponential pressure drop curve refers to a pressure output of the bonding head 26 decreasing exponentially. This curve typically provides rapid pressure release in the initial stage, followed by a gradual slowdown in the pressure drop rate. It is suitable for bonding materials that require rapid release of initial high pressure but then a smooth transition. A segmented pressure drop curve divides the entire pressure drop process into multiple stages, each using a different pressure drop rate or mode. For example, linear pressure drop can be used first, then switched to exponential pressure drop, or a constant pressure can be maintained at a specific pressure point for a period of time. This type of curve can more flexibly adapt to the multi-stage mechanical response characteristics of complex bonding materials. An S-shaped pressure drop curve refers to a pressure output change that follows an S-shape. This curve changes gently at the beginning and end of the pressure drop, with a faster change in the middle stage. It provides a smoother pressure transition, effectively avoiding damage to the bonding material or chip due to sudden pressure changes, and is particularly suitable for bonding precision devices sensitive to impact. By providing these diverse curve types, the system can select the most suitable pressure relief path according to actual needs, thereby optimizing the formation of the bonding interface.

[0080] In some implementations, step S2 includes:

[0081] Based on the current pressure and position information, obtain the contact state parameters between the bonding head 26 and the bonding material. The contact state parameters include the contact area, contact pressure distribution, and material deformation rate.

[0082] Based on the contact state parameters and the preset pressure drop curve, determine the adjustment amount of the pressure output and the adjustment amount of the lifting and lowering motion of the bonding head 26.

[0083] Adjust the pressure output and lifting motion of the key head 26 according to the adjustment amount of the pressure output and the adjustment amount of the lifting motion.

[0084] For calculating the contact area, a geometric model and a material deformation model of the bonding head 26 can be pre-established. When the bonding head 26 is pressed down, the actual contact area between the bonding head 26 and the material is estimated through finite element analysis or a lookup table method, based on the geometry of the bonding head 26 and the elastic modulus of the material, combined with real-time pressure and position information.

[0085] For calculating the contact pressure distribution, a multi-point pressure sensor array 22 can be used to acquire pressure data at different locations on the bonding interface, and a numerical method (such as the least squares method) can be used to fit the pressure distribution function on the interface.

[0086] For calculating the deformation rate of the material, the instantaneous descent or rise rate of the bonding head 26 relative to the material can be calculated using the position information of the bonding head 26 obtained at continuous time points, through differential operation or Kalman filtering, i.e., the deformation rate of the material.

[0087] Specifically, the pressure drop curve is a preset ideal pressure release trajectory. It defines how the pressure applied to the material by the bonding head should change with time or the position of the bonding head during the bonding process. During the contact between the bonding head 26 and the bonding material, the contact state parameters between the bonding head 26 and the bonding material can be accurately calculated using real-time pressure and position information. After obtaining these contact state parameters, the controller compares these real-time calculated contact state parameters with the preset pressure drop curve. The pressure drop curve has a corresponding ideal pressure value and ideal deformation state at each time point or position point. The system can then combine the preset pressure drop curve to accurately determine the adjustment amount of the pressure output and the adjustment amount of the lifting and lowering motion of the bonding head 26. For example, if the calculated contact pressure distribution is uneven, it means that the actual pressure distribution deviates from the uniform or specific distribution requirements implied by the pressure drop curve. To approximate the ideal pressure distribution, the controller determines, based on the deviation, whether to adjust the orientation of the bonding head 26 (e.g., by fine-tuning the tilt angle of the bonding head 26) or the local pressure output (e.g., by controlling multiple independent pressure units within the bonding head 26). This allows for a more uniform pressure distribution, conforming to the pressure drop curve requirements. If the material deformation rate is too fast or too slow, it means the actual deformation rate deviates from the expected deformation rate of the pressure drop curve. Since pressure and deformation are interrelated, for example, if the deformation rate is too fast, the speed of the lifting and lowering motion may need to be slowed to allow the material more time for stress relaxation, resulting in a smoother pressure release and better adherence to the pressure drop curve. If the deformation rate is too slow, the speed of the lifting and lowering motion may need to be increased to ensure that the target pressure point of the pressure drop curve is reached within a predetermined time. Thus, based on these calculated adjustments, the pressure output and lifting and lowering motion of the bonding head 26 are adjusted in real time, achieving fine-grained control of the bonding process. Therefore, the pressure drop curve, as the target trajectory, provides a benchmark for adjusting the pressure output and lifting and lowering motion of the bonding head 26. By monitoring the actual contact state parameters in real time and comparing them with the pressure reduction curve, the system can calculate the necessary adjustment amount to correct the deviation and ensure that the bonding process always proceeds along the preset ideal pressure reduction path, thereby achieving smooth and uniform pressure release, avoiding stress concentration, and improving bonding quality.

[0088] This application's solution addresses the problem of insufficient control precision in the bonding process in traditional methods by introducing real-time calculation of contact state parameters between the bonding head 26 and the bonding material. The ability to acquire and analyze key parameters such as contact area, contact pressure distribution, and material deformation rate allows the system to gain a deeper understanding of the material's actual response during bonding. Based on this, by comparing these real-time parameters with a preset pressure reduction curve, the precise adjustment amounts for the pressure output and lifting motion of the bonding head 26 are determined. This enables refined control of the bonding process.

[0089] In a second aspect, this application provides a chip bonding system, including a pressure sensor array 22, a position sensor 23, a speed reduction device 24, a lifting motor 25, and a bonding head 26, all of which are connected to a controller 21.

[0090] The pressure sensor array 22 is used to measure the pressure information of the bonding head 26 in real time and send the pressure information to the controller 21;

[0091] Position sensor 23 is used to measure the position information of bonding head 26 in real time and send the position information to controller 21;

[0092] Controller 21 is used to receive pressure information and position information;

[0093] The speed reduction device 24 is installed in the lifting motor 25, which is connected to the bonding head 26. The lifting motor 25 is used to drive the lifting and lowering movement of the bonding head 26. The controller 21 is also used to adjust the pressure output and lifting and lowering movement of the bonding head 26 according to the current pressure information and position information, so that the bonding head 26 releases pressure according to the preset pressure reduction curve.

[0094] The chip bonding system proposed in this application aims to effectively solve problems such as stress concentration, uneven bonding interface, and limited material selection caused by instantaneous pressure release in traditional bonding processes through integrated hardware components and intelligent control logic. This system senses the pressure and position of the bonding head 26 in real time, and the controller 21 performs precise calculations and outputs commands to collaboratively drive the lifting motor 25 and the reduction gear 24. This allows for precise adjustment of the pressure output and lifting motion of the bonding head 26, ensuring that the pressure release during the bonding process strictly follows a preset pressure reduction curve, thereby significantly improving bonding quality and product yield.

[0095] The pressure sensor array 22 can be integrated inside or near the bonding head 26, for example, using piezoresistive, piezoelectric, or capacitive sensors, to monitor pressure changes in real time when the bonding head 26 comes into contact with the bonding material. The position sensor 23 can be mounted on the bonding head 26, for example, using an optical encoder, laser displacement sensor, or eddy current sensor, to acquire the vertical position of the bonding head 26 in real time.

[0096] The bonding head 26 is the component that directly contacts and applies pressure to the bonding material. The bonding head 26 is typically made of wear-resistant and high-temperature-resistant materials, such as ceramics or special alloys. The bonding head 26 can be designed with different geometries to accommodate the size and morphology of different chips or bonding materials.

[0097] In some embodiments, the bonding head 26 may integrate a heating element to heat the bonding area during the bonding process, thereby promoting the flow and curing of the bonding material. The pressure output of the bonding head 26 may be adjusted by an internal pressure actuator (e.g., a pneumatic cylinder, hydraulic cylinder, or electromagnetic actuator), which is also controlled by the controller 21.

[0098] Please refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device 3 includes a processor 301 and a memory 302. The processor 301 and the memory 302 are interconnected and communicate with each other via a communication bus 303 and / or other connection mechanisms (not shown). The memory 302 stores computer-readable instructions executable by the processor 301. When the electronic device is running, the processor 301 executes these computer-readable instructions to perform any of the optional implementations of the above embodiments, thereby achieving the following functions: acquiring the current pressure information and position information of the bonding head 26; adjusting the pressure output and lifting / lowering movement of the bonding head 26 according to the current pressure information and position information, so that the bonding head 26 releases pressure according to a preset pressure reduction curve.

[0099] This application provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it performs the method in any optional implementation of the above embodiments to achieve the following functions: acquiring the current pressure information and position information of the bonding head 26; adjusting the pressure output and lifting movement of the bonding head 26 according to the current pressure information and position information, so that the bonding head 26 releases pressure according to a preset pressure reduction curve. The computer-readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read Only Memory (EPROM), Programmable Red-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0100] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and there may be other division methods in actual implementation. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interface; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0101] Furthermore, the units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0102] Furthermore, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0103] In this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying any such actual relationship or order between these entities or operations.

[0104] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A chip bonding method, characterized in that, Including the following steps: S1. Obtain the current pressure and position information of the bonding head (26); S2. Based on the current pressure information and position information, adjust the pressure output and lifting movement of the bonding head (26) so that the bonding head (26) releases pressure according to the preset pressure reduction curve; Step S1 includes: Obtain a pre-constructed database of bonding material properties, which includes the mechanical parameters, thermal parameters, and surface morphology characteristics of different bonding materials, as well as the pressure response characteristics and position deformation characteristics of the bonding head (26) when in contact with different bonding materials. The mechanical parameters, thermal parameters, and surface morphology characteristics directly determine the pressure response characteristics and position deformation characteristics of the bonding head (26) when in contact with different bonding materials. The pressure response characteristics and positional deformation characteristics of the bonding head (26) when in contact with different bonding materials are obtained from the bonding material property database. Based on the pressure response characteristics and the position deformation characteristics, the configuration parameters of the pressure sensor and position sensor (23) adapted to different bonding materials are determined; Based on the configuration parameters, obtain the current pressure information and position information of the bonding head (26); The pre-generation step of the pressure drop curve includes: Based on the bonding material property database, a pressure drop curve type matching the bonding material properties is determined; the pressure drop curve type includes an exponential pressure drop curve and an S-shaped pressure drop curve. An exponential pressure drop curve provides rapid pressure release in the initial stage, followed by a gradual slowdown in the pressure drop rate. An S-shaped pressure drop curve exhibits a gradual change at the beginning and end of the pressure drop, with a faster change in the middle stage. Based on the aforementioned pressure reduction curve type, a preset pressure reduction curve is generated; Step S2 includes: Based on the current pressure information and position information, obtain the contact state parameters between the bonding head (26) and the bonding material, including the contact area, contact pressure distribution and material deformation rate; Based on the contact state parameters and the preset pressure reduction curve, determine the adjustment amount of the pressure output of the bonding head (26) and the adjustment amount of the lifting motion; The pressure output and lifting motion of the bonding head (26) are adjusted according to the adjustment amount of the pressure output and the adjustment amount of the lifting motion.

2. The chip bonding method according to claim 1, characterized in that, The configuration parameters include the range of the pressure sensor, the sensitivity of the pressure sensor, the sampling frequency of the pressure sensor, the resolution of the position sensor (23), and the measurement range of the position sensor (23).

3. The chip bonding method according to claim 2, characterized in that, The step of determining the configuration parameters of the pressure sensor and position sensor (23) adapted to different bonding materials based on the pressure response characteristics and the position deformation characteristics includes: Based on the pressure response characteristics and the position deformation characteristics, the configuration parameters of the pressure sensor and position sensor (23) adapted to different bonding materials are determined by using a preset parameter table.

4. A chip bonding system, characterized in that, It includes a pressure sensor array (22), a position sensor (23), a speed reduction device (24), a lifting motor (25), and a bonding head (26) that are respectively connected to the controller (21); The pressure sensor array (22) is used to measure the pressure information of the bonding head (26) in real time and send the pressure information to the controller (21); The position sensor (23) is used to measure the position information of the bonding head (26) in real time and send the position information to the controller (21); The controller (21) is used to receive the pressure information and the position information; The deceleration device (24) is installed in the lifting motor (25), which is connected to the bonding head (26). The lifting motor (25) is used to drive the lifting motion of the bonding head (26). The controller (21) is also used to adjust the pressure output and lifting motion of the bonding head (26) according to the current pressure information and the position information, so that the bonding head (26) releases pressure according to the preset pressure reduction curve. The controller (21) is used to, when receiving the pressure information and the position information, also specifically perform the following: Obtain a pre-constructed database of bonding material properties, which includes the mechanical parameters, thermal parameters, and surface morphology characteristics of different bonding materials, as well as the pressure response characteristics and position deformation characteristics of the bonding head (26) when in contact with different bonding materials. The mechanical parameters, thermal parameters, and surface morphology characteristics directly determine the pressure response characteristics and position deformation characteristics of the bonding head (26) when in contact with different bonding materials. The pressure response characteristics and positional deformation characteristics of the bonding head (26) when in contact with different bonding materials are obtained from the bonding material property database. Based on the pressure response characteristics and the position deformation characteristics, the configuration parameters of the pressure sensor and position sensor (23) adapted to different bonding materials are determined; Based on the configuration parameters, obtain the current pressure information and position information of the bonding head (26); The pre-generation step of the pressure drop curve includes: Based on the bonding material property database, a pressure drop curve type matching the bonding material properties is determined; the pressure drop curve type includes an exponential pressure drop curve and an S-shaped pressure drop curve. An exponential pressure drop curve provides rapid pressure release in the initial stage, followed by a gradual slowdown in the pressure drop rate. An S-shaped pressure drop curve exhibits a gradual change at the beginning and end of the pressure drop, with a faster change in the middle stage. Based on the aforementioned pressure reduction curve type, a preset pressure reduction curve is generated; The controller (21) is also used to adjust the pressure output and lifting movement of the bonding head (26) according to the current pressure information and the position information so that the bonding head (26) releases pressure according to the preset pressure reduction curve, specifically performing the following: Based on the current pressure information and position information, obtain the contact state parameters between the bonding head (26) and the bonding material, including the contact area, contact pressure distribution and material deformation rate; Based on the contact state parameters and the preset pressure reduction curve, determine the adjustment amount of the pressure output of the bonding head (26) and the adjustment amount of the lifting motion a; The pressure output and lifting motion of the bonding head (26) are adjusted according to the adjustment amount of the pressure output and the adjustment amount of the lifting motion.

5. An electronic device, characterized in that, It includes a processor and a memory, the memory storing computer-readable instructions, which, when executed by the processor, perform the steps of a chip bonding method as described in any one of claims 1-3.

6. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it performs the steps of a chip bonding method as described in any one of claims 1-3.

Citation Information

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