Light emitting diode and preparation method thereof
By employing a composite reflective structure in the light-emitting diode (LED), the problems of leakage and insufficient brightness caused by improper reflective layer thickness were solved, resulting in a high-yield and high-brightness LED.
CN121218752APending Publication Date: 2025-12-26HC SEMITEK ZHEJIANG CO LTD
Patent Information
- Application Number
- CN202511096287.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-06
- Publication Date
- 2025-12-26
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Figure CN121218752A_ABST
Abstract
The invention provides a light emitting diode and a preparation method thereof. The light-emitting diode comprises an epitaxial structure and a composite reflection structure, the composite reflection structure comprises a first insulation reflection sub-layer, a metal reflection sub-layer and a second insulation reflection sub-layer; the first insulating reflection sub-layer is located on one side of the epitaxial structure, the metal reflection sub-layer is located on the side, away from the epitaxial structure, of the first insulating reflection sub-layer, and the second insulating reflection sub-layer covers the side, away from the first insulating reflection sub-layer, of the metal reflection sub-layer and covers the peripheral wall of the metal reflection sub-layer. And the edge of the second insulating reflection sub-layer is connected with the first insulating reflection sub-layer.
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Citation Information
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