Slotted patch antennas and antenna arrays with high sidelobe suppression

By designing a slotted patch antenna with high sidelobe suppression and combining it with stacked metasurfaces and a non-uniform feed network, the problem of high sidelobe level in millimeter-wave band filter antennas was solved, realizing wide bandwidth and high gain millimeter-wave applications suitable for 5G communication.

CN121332158BActive Publication Date: 2026-06-30CHINA UNIV OF MINING & TECH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHINA UNIV OF MINING & TECH
Filing Date
2025-11-06
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing millimeter-wave band filtered antenna designs suffer from high sidelobe levels, especially in the E-plane or H-plane where it is difficult to achieve low sidelobe levels. Moreover, most designs are only effective at lower frequencies, limiting their application in the millimeter-wave band.

Method used

A slotted patch antenna design with high sidelobe suppression is adopted, which combines a stacked metasurface structure and a non-uniform feed network. By introducing metal vias and arrow-shaped stub strips at the four corners of the square ring, the radiation null point is enhanced. An antenna array is formed using unequal power dividers and equal power dividers to achieve high sidelobe suppression.

Benefits of technology

High out-of-band rejection and wide impedance bandwidth were achieved in the millimeter-wave band. The antenna array had a gain of 16.2 dBi at 28 GHz, an out-of-band rejection of about 18 dB, and the E-plane and H-plane sidelobe levels were suppressed to below -17.2 dB and -19 dB, respectively. The structure was simple and easy to fabricate.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121332158B_ABST
    Figure CN121332158B_ABST
Patent Text Reader

Abstract

This invention discloses a slotted patch antenna and antenna array with high sidelobe suppression. The upper surface of the first dielectric substrate of the slotted patch antenna has four square rings, and the lower surface of the first dielectric substrate has four rectangular patches. The square rings and rectangular patches are connected by metal pillars to form a stacked metasurface structure. The upper surface of the second dielectric substrate has four arrow-shaped stub strips, and the upper surface of the third dielectric substrate is a metal ground with a rectangular slot etched in the center. The lower surface of the third dielectric substrate is the feed structure, employing a bifurcated microstrip feed network. The first dielectric substrate and the intermediate dielectric substrate are connected by a first adhesive layer, and the second and third dielectric substrates are connected by a second adhesive layer. Based on a fusion design method, this invention improves the sidelobe suppression capability of the slotted patch antenna without occupying additional area due to the added parasitic structure. Therefore, this invention has potential application value in improving communication stability in millimeter-wave systems.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to the field of radio frequency and microwave technology, and in particular to a slotted patch antenna with a filter grid and a type of antenna array, which has high sidelobe suppression. Background Technology

[0002] Millimeter-wave bands have attracted significant interest in 5G wireless communication due to their ability to provide ultra-high-speed data rates and extensive spectrum resources. With the rapid development of millimeter-wave communication systems, multifunctional and miniaturized devices are receiving increasing attention. Antennas and filters, as fundamental components of the RF front-end, are typically interconnected via matching networks. This approach obviously complicates the design process and introduces additional transmission losses, which are exacerbated at millimeter-wave frequencies. To overcome these limitations, filtered antennas can integrate filtering and radiation functions into a single structure. Meanwhile, metasurfaces, as two-dimensional analogues of metamaterials, have attracted increasing attention due to their ability to effectively manipulate the amplitude and phase of electromagnetic waves. In particular, metasurfaces have been widely used to enhance antenna bandwidth while maintaining a low profile. Therefore, combining filtered antennas with metasurface structures is of great significance for advancing the miniaturization and performance improvement of millimeter-wave systems.

[0003] Low sidelobe levels are ideal for filtered antennas in millimeter-wave communication systems because they further suppress interference signals in the spatial domain, thereby improving system stability. However, many existing filtered antenna designs still exhibit relatively high sidelobes, mainly due to the use of equal-power feed networks. To alleviate this problem, the integration of non-equal-power feed networks has been proposed as a solution to enhance sidelobe suppression. However, most designs can only achieve low sidelobe levels in the E-plane or H-plane, which inevitably limits their practical implementation. Furthermore, most of these low-sidelobe filtered antennas are designed to operate in lower frequency bands. Therefore, designing low-sidelobe filtered antennas in the millimeter-wave band is of great research value. Summary of the Invention

[0004] This invention aims to at least partially address one of the technical problems in related art. To this end, the invention provides a slotted patch antenna with a filtered grid and high sidelobe suppression, characterized by its compact structure and low sidelobe level, showing significant potential for millimeter-wave applications.

[0005] The second objective of this invention is to provide an antenna array.

[0006] This invention proposes a slotted patch antenna with high sidelobe suppression, comprising: a first dielectric substrate, a first adhesive layer, a second dielectric substrate, a second adhesive layer, and a third dielectric substrate arranged sequentially from top to bottom; wherein,

[0007] The upper surface of the first dielectric substrate has four identical square rings at its center, and the four square rings are arranged in a 2×2 array.

[0008] The lower surface of the first dielectric substrate has four identical rectangular patches at its center, and the four rectangular patches are arranged in a 2×2 array.

[0009] The outer ring size of the square ring is the same as the size of the rectangular patch and their vertical positions correspond. Each square ring and the corresponding rectangular patch are connected by four metal pillars to form a stacked metasurface structure.

[0010] The second dielectric substrate has four identical arrow-shaped branch strips at the center of its upper surface, and the four arrow-shaped branch strips are arranged in a 2×2 array;

[0011] A metal ground structure is provided on the upper surface of the third dielectric substrate, and a rectangular slit is etched at the center of the metal ground structure.

[0012] A power feeding structure is provided on the lower surface of the third dielectric substrate. The power feeding structure is a bifurcated microstrip power feeding structure, and the bifurcation of the power feeding structure is perpendicular to the rectangular gap.

[0013] The first dielectric substrate and the second dielectric substrate are connected by the first adhesive layer;

[0014] The second dielectric substrate and the third dielectric substrate are connected by the second adhesive layer.

[0015] Furthermore, the slotted patch antenna with high sidelobe suppression according to the above embodiments of the present invention may also have the following additional technical features:

[0016] According to one embodiment of the present invention, the four square rings are centrally symmetrical about the geometric center point of the upper surface of the first dielectric substrate, and the spacing between adjacent square rings is the same.

[0017] According to one embodiment of the present invention, the four rectangular patches are centrally symmetrical about the geometric center point of the lower surface of the first dielectric substrate, and the spacing between adjacent rectangular patches is the same.

[0018] According to one embodiment of the present invention, the metal pillars are of the same size, and the four metal pillars between each square ring and the corresponding rectangular patch constitute a metal pillar group. The spacing between adjacent metal pillars in each metal pillar group is the same, and the spacing between adjacent metal pillar groups is the same.

[0019] According to one embodiment of the present invention, the arrow-shaped branch strip includes two vertical strips and a strip located between the two vertical strips. The four arrow-shaped branch strips are centrally symmetrical about the geometric center point of the lower surface of the second dielectric substrate, and the spacing between adjacent arrow-shaped branch strips is the same.

[0020] According to one embodiment of the present invention, the rectangular slots are longitudinally distributed at the center of the metal ground and are centrally symmetrical about the geometric center point of the metal ground.

[0021] According to one embodiment of the present invention, the feeding structure includes a first microstrip line, a first transition structure, a second transition structure, and two second microstrip lines connected in sequence; wherein,

[0022] The first microstrip line is laterally distributed at the geometric center point on the lower surface of the third dielectric substrate. One end of the first microstrip line is connected to the center position of the first transition structure. The first transition structure is connected to the center position of the second transition structure. The two second microstrip lines are respectively connected to the two ends of the second transition structure, and the two second microstrip lines are connected to the rectangular gap.

[0023] According to one embodiment of the present invention, the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are made of Rogers RO4003C, with a dielectric constant of 3.38, a relative permeability of 1 and a loss tangent of 0.0027.

[0024] According to one embodiment of the present invention, the materials of the first adhesive layer and the second adhesive layer are Rogers RO4450F, with a dielectric constant of 3.52, a relative permeability of 1, and a loss tangent of 0.004.

[0025] According to one embodiment of the present invention, the stacked metasurface structure, the arrow-shaped branch strip, the metal ground, and the power supply structure are all made of copper, silver, or gold, the same material used in printed circuits.

[0026] To achieve the above objectives, a second aspect of the present invention provides an antenna array comprising: a plurality of slotted patch antennas with high sidelobe suppression according to claims 1-8, wherein the plurality of slotted patch antennas with high sidelobe suppression form a 4×4 array; wherein the antenna array is divided into four antenna groups, each antenna group comprising two antenna elements, each antenna element comprising a 2×1 array of slotted patch antennas with high sidelobe suppression, the feeding structures of the two slotted patch antennas with high sidelobe suppression in each antenna element being connected by an unequal power divider, the two antenna elements in each antenna group being connected by the unequal power divider; two adjacent antenna groups being connected by an equal power divider to form two antenna subarrays; and the two antenna subarrays being connected by the equal power divider.

[0027] According to one embodiment of the present invention, the equal power frequency divider has a T-shaped connection structure and a triangular groove that is symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection; the unequal power frequency divider has a T-shaped connection structure and a triangular groove that is not symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection.

[0028] Compared with the prior art, the present invention has the following technical effects:

[0029] Traditional low-sidelobe filter antennas are mostly designed to operate in lower frequency bands. Some low-sidelobe filter antennas deployed in the millimeter-wave band, such as slotted antennas, result in relatively narrow bandwidths. This invention proposes a compact filter metasurface antenna based on a fusion method. The stacked metasurface radiators have four metal vias at the four corners of a square ring, which not only widens the impedance bandwidth but also enhances the upper stopband suppression level. Simultaneously, four arrow-shaped stub strips are introduced, generating radiation nulls at the lower edges of the same strip, further improving the roll-off rate. Furthermore, a non-uniform feed network based on a Taylor distribution is used to excite the antenna elements, improving the sidelobe suppression performance of the filter metasurface array.

[0030] The antenna has a maximum gain of 8.4 dBi at 28 GHz and an out-of-band rejection level of approximately 20.3 dB.

[0031] When the antenna is arrayed, the maximum gain is 16.2 dBi, the out-of-band rejection level is about 18 dB, and the sidelobe levels of the E-plane and H-plane are suppressed to below -17.2 dB and -19 dB, respectively.

[0032] The antenna has a simple structure, is easy to manufacture, and has relatively low cost and weight.

[0033] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of a slotted patch antenna with high sidelobe suppression according to an embodiment of the present invention.

[0035] Figure 2 This is a top view of the upper surface of a first dielectric substrate according to an embodiment of the present invention;

[0036] Figure 3 This is a top view of the lower surface of a first dielectric substrate according to an embodiment of the present invention;

[0037] Figure 4 This is a top view of the upper surface of a second dielectric substrate according to an embodiment of the present invention;

[0038] Figure 5 This is a top view of the lower surface of a third dielectric substrate according to an embodiment of the present invention;

[0039] Figure 6 This is a schematic diagram of the antenna array according to an embodiment of the present invention;

[0040] Figure 7 This is a schematic diagram of the feeding structure of an antenna array according to an embodiment of the present invention;

[0041] Figure 8 This is a schematic diagram of an equal-power frequency divider according to an embodiment of the present invention;

[0042] Figure 9 This is a schematic diagram of an unequal power frequency divider according to an embodiment of the present invention;

[0043] Figure 10 The S-parameter curve of an antenna array according to an embodiment of the present invention;

[0044] Figure 11 This is a gain curve of an antenna array according to an embodiment of the present invention.

[0045] Figure 12 This is a normalized E-plane radiation pattern of an antenna array at its center frequency of 28 GHz, according to an embodiment of the present invention.

[0046] Figure 13 This is a normalized H-plane radiation pattern of an antenna array at its center frequency of 28 GHz, according to an embodiment of the present invention.

[0047] Figure label:

[0048] 1. First dielectric substrate; 11. Square ring; 12. Metal pillar; 13. Rectangular patch; 2. Second dielectric substrate; 21. Arrow-shaped branch strip; 3. Third dielectric substrate; 31. Rectangular slot; 32. Feed structure; 321. First microstrip line; 322. First transition structure; 323. Second transition structure; 324. Two second microstrip lines; 4. First adhesive layer; 5. Second adhesive layer; 101. Unequal power divider; 102. Equal power divider. Detailed Implementation

[0049] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0050] The following description, with reference to the accompanying drawings, describes an embodiment of the present invention of a slotted patch antenna with high sidelobe suppression and an antenna array.

[0051] like Figures 1 to 5 As shown, the filter grid slotted patch antenna with high sidelobe suppression according to an embodiment of the present invention includes: a first dielectric substrate 1, a first adhesive layer 4, a second dielectric substrate 2, a second adhesive layer 5, and a third dielectric substrate 3 arranged sequentially from top to bottom; wherein, four identical square rings 11 are disposed at the center of the upper surface of the first dielectric substrate 1, the square rings 11 are annular metal patches, and the four square rings 11 are arranged in a 2×2 array; four identical rectangular patches 13 are disposed at the center of the lower surface of the first dielectric substrate 1, the rectangular patches 13 are rectangular metal patches, and the four rectangular patches 13 are arranged in a 2×2 array; the outer ring size of the square rings 11 is the same as the size of the rectangular patches 13 and their upper and lower positions correspond, and each square ring 11 and the corresponding rectangular patch 13 are connected by four metal pillars 12 to form a stacked metasurface structure.

[0052] Four identical arrow-shaped branch strips 21 are provided at the center of the upper surface of the second dielectric substrate 2, and the four arrow-shaped branch strips 21 are arranged in a 2×2 array. A metal ground structure is provided on the upper surface of the third dielectric substrate 3, and a rectangular slit 31 is etched at the center of the metal ground structure; a feeding structure 32 is provided on the lower surface of the third dielectric substrate, and the feeding structure 32 is a bifurcated microstrip feeding structure, with the bifurcation of the feeding structure 32 perpendicular to the rectangular slit 31. The first dielectric substrate 1 and the second dielectric substrate 2 are connected by a first adhesive layer 4, and the second dielectric substrate 2 and the third dielectric substrate 3 are connected by a second adhesive layer 5.

[0053] This invention employs a traditional bifurcated microstrip feed network to directly excite a double-layer metasurface radiating element. Initially, a stacked configuration is used primarily to enhance the operating bandwidth of the filtering antenna, but this does not exhibit significant filtering characteristics. To improve the upper stopband suppression level, several blind holes are introduced at the four corners of the square ring 11. This results in a suppression level greater than 18 dB at the radiation null point of the upper stopband because the surface current at this radiation null point is mainly concentrated on the inner side of the antenna and within the square ring structure formed by the blind holes, while other areas of the metasurface show almost no current distribution. This indicates that a strong resonance is excited at the square ring 11 structure, hindering energy transfer to the metasurface and further enhancing the suppression effect on the upper stopband. Conversely, at the center frequency, the surface current is uniformly distributed and consistently oriented on the metasurface, contributing to superior radiation performance.

[0054] However, changing the size of the square ring 11 at this point cannot effectively enhance the lower stopband level. To solve this problem, this invention adds an arrow-shaped stub strip 21. Due to the perfect symmetry of the arrow-shaped stub strip structure, its resonance characteristics are studied using even-mode and odd-mode analysis methods. Under even-mode excitation, the plane of symmetry of the arrow-shaped strip is an open circuit, and under odd-mode excitation, it is a short circuit. At this point, the two radiation zeros generated in the lower stopband under odd-mode analysis can be determined.

[0055] According to one embodiment of the present invention, such as Figure 2 As shown, the four square rings 11 are centrally symmetrical about the geometric center point of the upper surface of the first dielectric substrate 1, and the spacing between adjacent square rings 11 is the same.

[0056] According to one embodiment of the present invention, such as Figure 3 As shown, the four rectangular patches 13 are centrally symmetrical about the geometric center point of the lower surface of the first dielectric substrate 1, and the spacing between adjacent rectangular patches 13 is the same.

[0057] According to one embodiment of the present invention, the metal pillars 12 are of the same size, and the four metal pillars 12 between each square ring 11 and the corresponding rectangular patch 14 constitute a metal pillar group. The spacing between adjacent metal pillars 12 in each metal pillar group is the same, and the spacing between adjacent metal pillar groups is the same.

[0058] According to one embodiment of the present invention, the arrow-shaped branch strip 21 includes two vertical strips and a strip located between the two vertical strips. The four arrow-shaped branch strips 21 are centrally symmetrical about the geometric center point of the lower surface of the second dielectric substrate 2, and the spacing between adjacent arrow-shaped branch strips 21 is the same.

[0059] According to one embodiment of the present invention, the rectangular slots 21 are longitudinally distributed at the center of the metal ground and are centrally symmetrical about the geometric center point of the metal ground.

[0060] According to one embodiment of the present invention, the power feeding structure 32 includes a first microstrip line 321, a first transition structure 322, a second transition structure 323, and two second microstrip lines 324 connected in sequence; wherein, the first microstrip line 321 is laterally distributed at the geometric center point on the lower surface of the third dielectric substrate 3, one end of the first microstrip line 321 is connected to the center position of the first transition structure 322, the first transition structure 322 is connected to the center position of the second transition structure 323, the two second microstrip lines 324 are respectively connected to the two ends of the second transition structure 323, and the two second microstrip lines 324 are connected to the rectangular gap 31.

[0061] According to one embodiment of the present invention, the first dielectric substrate 1, the second dielectric substrate 2 and the third dielectric substrate 3 are made of Rogers RO4003C, with a dielectric constant of 3.38, a relative permeability of 1 and a loss tangent of 0.0027.

[0062] In one example, the first dielectric substrate 1 is made of Rogers RO4003C with a dielectric constant of 3.38, a relative permeability of 1, a loss tangent of 0.0027, and a thickness of 0.813 mm; the second dielectric substrate 2 is made of Rogers RO4003C with a dielectric constant of 3.38, a relative permeability of 1, a loss tangent of 0.0027, and a thickness of 0.203 mm; the third dielectric substrate 3 is made of Rogers RO4003C with a dielectric constant of 3.38, a relative permeability of 1, a loss tangent of 0.0027, and a thickness of 0.203 mm.

[0063] According to one embodiment of the present invention, the first adhesive layer 4 is made of Rogers RO4450F, with a dielectric constant of 3.52, a relative permeability of 1, a loss tangent of 0.004, and a thickness of 0.2 mm; the second adhesive layer 5 is made of Rogers RO4450F, with a dielectric constant of 3.52, a relative permeability of 1, a loss tangent of 0.004, and a thickness of 0.2 mm.

[0064] According to one embodiment of the present invention, the square ring 11, the metal pillar 12, the rectangular patch 13, the arrow-shaped branch strip 21, the metal ground and the power supply structure 32 are all made of copper, silver or gold, the same material as printed circuits.

[0065] The following is for reference. Figures 1 to 9 This invention provides a detailed description of a metasurface filter antenna with high out-of-band suppression according to a specific embodiment.

[0066] The main dimensions of the antenna are as follows: On the upper surface 11 of the first dielectric substrate 1, the outer ring of a single square ring 11 has a length lp1 of 2.02 mm and a width wp1 of 2.02 mm; the inner ring of a single square ring 11 has a length lp2 of 1.22 mm and a width wp2 of 1.22 mm; the spacing ws1 between any two adjacent square rings 11 is 0.16 mm; the diameter dvia of the metal pillar 12 in the first dielectric substrate 1 is 0.2 mm; the spacing pvia between any two metal pillars 12 on a square ring 11 is 1.62 mm; on the lower surface of the first dielectric substrate 1, a single rectangular patch 13 has a length lp3 of 2.02 mm and a width wp3 of 2.02 mm; adjacent rectangular patches 13... The spacing between any two arrow-shaped branch strips 21 is ws2, which is 0.16 mm. On the upper surface of the second dielectric substrate 2, the length lt1 of the two perpendicular sides of the arrow-shaped branch strips 21 is 1.71 mm, and the width wt1 is 0.3 mm. The length lt2 of the middle of the arrow-shaped branch strips 21 is 1.78 mm, and the width wt2 is 0.23 mm. The spacing between any two adjacent arrow-shaped branch strips 21 is ws3, which is 0.15 mm. On the metal ground surface of the upper surface of the third dielectric substrate 3, the etched rectangular slot 31 has a length ls4 of 2.9 m. m, width ws4 is 0.3mm, on the feed structure 32 on the lower surface of the third dielectric substrate 3, the length lg1 of the first microstrip line 321 is 4.75mm and the width wg1 is 0.42mm, the length lg4 of the second microstrip line 324 below the rectangular slot 31 is 1.45mm and the width wg4 is 0.12mm; the length lg2 of the first transition structure 322 is 0.2mm and the width wg2 is 0.92mm, the length lg3 of the second transition structure 323 is 0.3mm and the width wg3 is 2.3mm.

[0067] Corresponding to the above embodiments, the present invention also proposes an antenna array.

[0068] like Figure 6 and Figure 7 As shown, the antenna array of this embodiment includes: a plurality of high sidelobe suppression filtered grid slotted patch antennas as described above, the plurality of high sidelobe suppression filtered grid slotted patch antennas forming a 4×4 array; wherein, the antenna array is divided into four antenna groups, each antenna group including two antenna elements, each antenna element including a 2×1 array of high sidelobe suppression filtered grid slotted patch antennas, the feeding structure of the two high sidelobe suppression filtered grid slotted patch antennas in each antenna element is connected by an unequal power frequency divider 101, the two antenna elements of each antenna group are connected by an unequal power frequency divider 101; two adjacent antenna groups are connected by an equal power frequency divider 102 to form two antenna subarrays; the two antenna subarrays are connected by an equal power frequency divider 102.

[0069] like Figures 7 to 9As shown, according to one embodiment of the present invention, the equal power frequency divider 102 has a T-shaped connection structure and a triangular groove that is symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection; the unequal power frequency divider 101 has a T-shaped connection structure and a triangular groove that is not symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection.

[0070] For example, such as Figure 8 As shown, the equal power frequency divider 102 has a triangular groove symmetrical about the axis of symmetry of the T-connection structure at the T-connection. Half the length of the bottom of the triangular groove, wc1, is 0.4 mm, the height, wc2, is 1.1 mm, and the width of the transition structure, wc3, is 0.7 mm. Figure 9 As shown, the unequal power frequency divider 101 has a triangular groove at the T-connection that is not symmetrical about the axis of symmetry of the T-connection structure. The bottom of the triangular groove has a wc4 of 0.2 mm on one side and a wc7 of 0.17 mm on the other side, a height of wc5 of 1.15 mm, and a transition structure width of wc6 of 0.67 mm.

[0071] Combination Figure 10 It can be seen that the center frequency of this antenna array is 28 GHz, the operating frequency band is 25.6 - 31.1 GHz, and the in-band reflection coefficient |S11| is consistently below -15 dB within the 26.5 – 29.5 GHz range. The -10 dB bandwidth of this antenna array is 5.5 GHz, and the relative bandwidth is 19.6%. Figure 11 As can be seen, the antenna array has a maximum gain of 16.2 dBi at 28 GHz, indicating good radiation performance, and an out-of-band rejection level of approximately 18 dB, demonstrating good filtering performance. Figure 12 As can be seen, the sidelobe level is suppressed to below -17.2 dB in the E plane. Figure 13 As can be seen, the sidelobe level is suppressed to below -19dB in the H-plane. Given these characteristics, the proposed filtered antenna shows significant potential for millimeter-wave applications. Therefore, the proposed filtered grid slotted patch antenna and antenna array with high sidelobe suppression are well-suited for 5G millimeter-wave applications.

[0072] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0073] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0074] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0075] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A slotted patch antenna with a filter grid and high sidelobe suppression, characterized in that, include: The components arranged from top to bottom are: a first dielectric substrate, a first adhesive layer, a second dielectric substrate, a second adhesive layer, and a third dielectric substrate; wherein... The upper surface of the first dielectric substrate has four identical square rings at its center, and the four square rings are arranged in a 2×2 array. The lower surface of the first dielectric substrate has four identical rectangular patches at its center, and the four rectangular patches are arranged in a 2×2 array. The outer ring size of the square ring is the same as the size of the rectangular patch and their vertical positions correspond. Each square ring and the corresponding rectangular patch are connected by four metal pillars to form a stacked metasurface structure. The second dielectric substrate has four identical arrow-shaped branch strips at the center of its upper surface. The four arrow-shaped branch strips are arranged in a 2×2 array, and the arrowheads of the four arrow-shaped branch strips face the center of the substrate. A metal ground structure is provided on the upper surface of the third dielectric substrate, and a rectangular slit is etched at the center of the metal ground structure. A power feeding structure is provided on the lower surface of the third dielectric substrate. The power feeding structure is a bifurcated microstrip power feeding structure and is perpendicular to the rectangular gap. The first dielectric substrate and the second dielectric substrate are connected by the first adhesive layer; The second dielectric substrate and the third dielectric substrate are connected by the second adhesive layer.

2. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The four square rings are centrally symmetrical about the geometric center point of the upper surface of the first dielectric substrate, and the spacing between any two adjacent square rings is the same.

3. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The four rectangular patches are centrally symmetrical about the geometric center point of the lower surface of the first dielectric substrate, and the spacing between adjacent rectangular patches is the same.

4. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The metal pillars are all the same size. The four metal pillars between each square ring and the corresponding rectangular patch form a metal pillar group. The spacing between any two adjacent metal pillars in each metal pillar group is the same, and the spacing between any two adjacent metal pillar groups is also the same.

5. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The arrow-shaped branch strips include two vertical strips and a strip located between the two vertical strips. The four arrow-shaped branch strips are centrally symmetrical about the geometric center point of the upper surface of the second dielectric substrate, and the spacing between adjacent arrow-shaped branch strips is the same.

6. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The rectangular slots are longitudinally distributed at the center of the metal ground and are centrally symmetrical about the geometric center point of the metal ground.

7. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The power supply structure includes a first microstrip line, a first transition structure, a second transition structure, and two second microstrip lines connected in sequence; wherein... The first microstrip line is laterally distributed at the geometric center point on the lower surface of the third dielectric substrate. One end of the first microstrip line is connected to the center position of the first transition structure. The first transition structure is connected to the center position of the second transition structure. The two second microstrip lines are respectively connected to the two ends of the second transition structure, and the two second microstrip lines are perpendicular to the rectangular gap.

8. The slotted patch antenna with high sidelobe suppression according to claim 1, characterized in that, The stacked metasurface structure, the arrow-shaped branch strip, the metal ground, and the power supply structure are all made of copper, silver, or gold, metals commonly used in printed circuits.

9. An antenna array, characterized in that, include: Multiple slotted patch antennas with high sidelobe suppression according to claims 1-8, wherein the multiple slotted patch antennas with high sidelobe suppression are arranged in a 4×4 array; wherein, The antenna array is divided into four antenna groups, each antenna group including two antenna elements. Each antenna element includes a 2×1 array of the high sidelobe suppression filtered grid slotted patch antennas. The feeding structures of the two high sidelobe suppression filtered grid slotted patch antennas in each antenna element are connected by an unequal power frequency divider. The two antenna elements in each antenna group are connected by the unequal power frequency divider. Two adjacent antenna groups are connected by an equal power frequency divider to form two antenna subarrays. The two antenna subarrays are connected via the equal power frequency divider.

10. The antenna array according to claim 9, characterized in that, The equal power frequency divider has a T-shaped connection structure, and a triangular slot symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection; the unequal power frequency divider has a T-shaped connection structure, and a triangular slot not symmetrical about the axis of symmetry of the T-shaped connection structure is provided at the T-shaped connection.