Synchronous in-situ measurement system and method for high-temperature Raman spectrum and spectral emissivity

Abstract

The invention relates to a synchronous in-situ measurement system and method for high-temperature Raman spectrum and spectral emissivity, and the method comprises the steps: focusing continuous laser and near-infrared light on the surface of a to-be-measured sample at the same time based on a synchronous in-situ measurement task; acquiring a Raman spectrum signal, a thermal radiation spectrum signal, a near-infrared light reflection signal and a visible light reflection signal generated on the surface of the to-be-detected sample based on the continuous laser, the near-infrared light and the visible light; obtaining the surface appearance of the to-be-detected sample based on the visible light reflection signal; obtaining structural characteristics of the to-be-detected sample based on the Raman spectrum signal; and calculating the spectral emissivity and temperature of the to-be-measured sample by using the thermal radiation spectral signal and the near-infrared light reflection signal so as to complete a synchronous in-situ measurement task and obtain the spectral radiation thermal physical property and phase state of the to-be-measured sample at the same moment. Therefore, the technical problems that synchronous measurement of the spectral radiation thermophysical property and the phase state in the high-temperature state is lacked, and more accurate actual sample performance is difficult to obtain at the high temperature are solved.

Description

Technical Field

[0001] This application relates to the field of measurement technology, and in particular to a synchronous in-situ measurement system and method for high-temperature Raman spectroscopy and spectral emissivity. Background Technology

[0002] High-temperature phase transitions are complex physical processes that occur in materials under high-temperature conditions. Spectroscopic radiation thermophysical parameters serve as fundamental data for high-temperature non-contact measurement and radiation heat transfer analysis. Studying the influence of high-temperature phase transitions on the radiation properties of materials has engineering guiding value for the high-temperature applications of materials in fields such as energy, power, aerospace, and more.

[0003] To elucidate the relationship between the high-temperature phase structure and radiative thermal properties of materials, it is necessary to develop in-situ, real-time phase structure characterization methods. Among these techniques, in-situ X-ray diffraction and Raman spectroscopy are the main experimental methods. Raman spectroscopy, in particular, has advantages such as high spatiotemporal resolution and high sensitivity, and is widely used in the quantitative analysis of lattice dynamics, chemical bond vibration modes, and phase composition evolution characteristics. In the study of the high-temperature radiation properties of materials, various high-temperature spectral emissivity measurement systems have been established for different material types, temperature ranges, measurement spectra, heating methods, and temperature measurement methods.

[0004] However, for the measurement of spectral radiation thermophysical properties during high-temperature phase transitions, the relevant technologies face the following problems: (1) High-temperature phase transitions are multi-timescale evolution phenomena. Phase transitions may be reversible or irreversible, or steady-state or transient processes. Therefore, it is necessary to measure spectral radiation thermophysical properties and phase state simultaneously. However, there is currently a lack of technical solutions for simultaneous in-situ measurement of Raman spectra and spectral emissivity at high temperatures. (2) Since Raman spectroscopy and thermal radiation spectroscopy measurements only obtain surface information of the sample, and the sample has significant thermal resistance along the thickness direction, and the incident laser in Raman measurement will also induce a temperature rise effect in the micro-region of the upper surface, this will cause the temperature of the sample upper surface obtained by directly measuring the temperature of the heated thermocouple to deviate from the actual sample temperature, making it difficult to obtain accurate measurement results. This will affect subsequent research on the relationship between high-temperature phase structure and radiation thermophysical properties, which urgently needs improvement. Summary of the Invention

[0005] This application provides a synchronous in-situ measurement system and method for high-temperature Raman spectroscopy and spectral emissivity to solve the technical problem in related technologies that lack synchronous measurement of spectral radiation thermal properties and phase state under high temperature conditions, and that it is difficult to obtain more accurate actual sample performance at high temperatures.

[0006] The first aspect of this application provides a synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity, comprising: a laser modulation module for generating continuous laser light; a near-infrared monochromatic light source irradiation module for emitting near-infrared light; a high-temperature heating module for fixing and heating the sample to be tested; a microscopic confocal optical path module for transmitting light from the continuous laser light and the near-infrared light, such that the continuous laser light and the near-infrared light are simultaneously focused on the surface of the sample to be tested, and simultaneously transmitting light from the Raman spectral signal, thermal radiation spectral signal, and near-infrared light reflection signal generated on the surface of the sample to be tested; a visible light imaging module for emitting monochromatic visible light, such that the surface of the sample to be tested generates the visible light reflection signal based on the monochromatic visible light, and receiving the visible light reflection signal to obtain the surface morphology of the sample to be tested; a Raman spectroscopy measurement module for receiving the Raman spectral signal to obtain the structural characteristics of the sample to be tested based on the Raman spectral signal; and a thermal radiation spectroscopy measurement module for receiving the thermal radiation spectral signal to calculate the spectral emissivity and temperature of the sample to be tested using the thermal radiation spectral signal and the near-infrared light reflection signal.

[0007] A second aspect of this application provides a method for simultaneous in-situ measurement of high-temperature Raman spectroscopy and spectral emissivity, comprising the following steps: based on a simultaneous in-situ measurement task, simultaneously focusing continuous laser light and near-infrared light onto the surface of a sample to be tested; acquiring Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated by the surface of the sample to be tested based on the continuous laser light, the near-infrared light, and visible light; obtaining the surface morphology of the sample to be tested based on the visible light reflection signal; obtaining the structural characteristics of the sample to be tested based on the Raman spectral signals; and calculating the spectral emissivity and temperature of the sample to be tested using the thermal radiation spectral signals and the near-infrared light reflection signals to complete the simultaneous in-situ measurement task and obtain the spectral radiation thermal properties and phase state of the sample to be tested at the same moment.

[0008] Optionally, in one embodiment of this application, the step of calculating the spectral emissivity and temperature of the sample under test using the thermal radiation spectral signal and the near-infrared light reflection signal includes: obtaining the broadband radiation spectral intensity of the sample surface under the near-infrared light off condition; and inputting the broadband radiation spectral intensity and the surface temperature of the sample surface into a pre-constructed spectral emissivity calculation expression to obtain the spectral emissivity.

[0009] Optionally, in one embodiment of this application, before inputting the effective surface radiant intensity and the current surface temperature of the sample under test into a pre-constructed spectral emissivity calculation expression, the method further includes: determining the directional-directional spectral reflectance of the sample under test at a target wavelength and surface temperature using the bidirectional reflectance distribution function of the sample under test surface, the incident angle and azimuth angle of the near-infrared light; measuring the directional-hemispherical reflectance of the sample under test surface reflecting the near-infrared light at the target wavelength and surface temperature; calculating the ratio of the directional-directional spectral reflectance to the directional-hemispherical reflectance of the near-infrared light; obtaining the equivalent radiation formed by the near-infrared light incident on the sample under test surface at the target wavelength and surface temperature based on the ratio and the spectral radiant intensity, and obtaining the incident effective radiant intensity of the sample under test surface under the near-infrared light on-condition using the equivalent radiation; and constructing the spectral emissivity calculation expression using the incident effective radiant intensity.

[0010] Optionally, in one embodiment of this application, the expression for the incident effective light radiation intensity is: , in, , This represents the directional-directional spectral reflectance. This represents the directional-hemispherical reflectivity. This indicates the ratio. This indicates the equivalent radiation.

[0011] Optionally, in one embodiment of this application, before inputting the effective light radiation intensity and the current surface temperature of the sample under test into a pre-constructed spectral emissivity calculation expression, the method further includes: measuring the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation at the target wavelength; calculating the calibrated spectral emissivity of the sample under test at the target wavelength and the surface temperature using the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation; and retrieving the surface temperature using the calibrated spectral emissivity.

[0012] Optionally, in one embodiment of this application, the calculation expression for the calibration spectral emissivity is: , in, This indicates the emissivity of the calibrated spectrum. This indicates the incident effective light radiation intensity. This indicates the intensity of the unincident effective light radiation.

[0013] Optionally, in one embodiment of this application, the surface temperature is calculated using the following expression: , in, T This indicates the surface temperature. This represents the blackbody spectral radiation intensity distribution at the target wavelength.

[0014] A third aspect of this application provides a synchronous in-situ measurement device for high-temperature Raman spectroscopy and spectral emissivity, comprising: a focusing module for simultaneously focusing continuous laser light and near-infrared light onto the surface of a sample to be measured based on a synchronous in-situ measurement task; a first acquisition module for acquiring Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated by the surface of the sample to be measured based on the continuous laser light, the near-infrared light, and visible light; a second acquisition module for obtaining the surface morphology of the sample to be measured based on the visible light reflection signal; a third acquisition module for obtaining the structural characteristics of the sample to be measured based on the Raman spectral signals; and a calculation module for calculating the spectral emissivity and temperature of the sample to be measured using the thermal radiation spectral signals and near-infrared light reflection signals, thereby completing the synchronous in-situ measurement task and obtaining the spectral radiation thermophysical properties and phase state of the sample to be measured at the same moment.

[0015] Optionally, in one embodiment of this application, the calculation module includes: an acquisition unit for acquiring the broadband radiation spectral intensity of the surface of the sample under the near-infrared light off condition; and a first calculation unit for inputting the broadband radiation spectral intensity and the surface temperature of the sample surface into a pre-constructed spectral emissivity calculation expression to obtain the spectral emissivity.

[0016] Optionally, in one embodiment of this application, the calculation module further includes: a determination unit, used to determine the orientation-oriented spectral reflectance of the sample surface at a target wavelength and surface temperature using the bidirectional reflectance distribution function of the sample surface, the incident angle and directional angle of the near-infrared light; a first measurement unit, used to measure the orientation-hemispherical reflectance of the sample surface reflecting the near-infrared light at the target wavelength and surface temperature; a second calculation unit, used to calculate the ratio of the orientation-oriented spectral reflectance to the orientation-hemispherical reflectance of the near-infrared light; a third calculation unit, used to obtain the equivalent radiation formed by the near-infrared light incident on the sample surface at the target wavelength and surface temperature based on the ratio and the spectral radiation intensity, and to obtain the incident effective light radiation intensity of the sample surface under the near-infrared light on-condition using the equivalent radiation; and a fourth calculation unit, used to construct the spectral emissivity calculation expression using the incident effective light radiation intensity.

[0017] Optionally, in one embodiment of this application, the expression for the incident effective light radiation intensity is: , in, , This represents the directional-directional spectral reflectance. This represents the directional-hemispherical reflectivity. This indicates the ratio. This indicates the equivalent radiation.

[0018] Optionally, in one embodiment of this application, the calculation module further includes: a second measurement unit for measuring the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation at the target wavelength; a fifth calculation unit for calculating the calibration spectral emissivity of the sample under test at the target wavelength and the surface temperature using the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation; and an inversion unit for inverting the surface temperature using the calibration spectral emissivity.

[0019] Optionally, in one embodiment of this application, the calculation expression for the calibration spectral emissivity is: , in, This indicates the emissivity of the calibrated spectrum. This indicates the incident effective light radiation intensity. This indicates the intensity of the unincident effective light radiation.

[0020] Optionally, in one embodiment of this application, the surface temperature is calculated using the following expression: , in, T This indicates the surface temperature. This represents the blackbody spectral radiation intensity distribution at the target wavelength.

[0021] A fourth aspect of this application provides an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity as described in the above embodiments.

[0022] A fifth aspect of this application provides a computer-readable storage medium storing computer instructions for causing the computer to perform the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity as described in the above embodiments.

[0023] A sixth aspect of this application provides a computer program product, including a computer program, which, when executed, is used to implement the above-mentioned method for synchronous in-situ measurement of high-temperature Raman spectra and spectral emissivity.

[0024] This application embodiment utilizes a simultaneous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity to achieve simultaneous in-situ measurement of the high-temperature Raman spectrum and spectral emissivity of the sample under test. During actual measurement, a microscopic confocal optical path module is used to transmit the emitted light, allowing continuous laser and near-infrared light to be simultaneously focused onto the surface of the sample. Simultaneously, Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated by the emitted light are transmitted to the sample surface. The visible light reflection signal is used to obtain the surface morphology of the sample, the Raman spectral signal to obtain its structural characteristics, and the thermal radiation spectral signal and near-infrared light reflection signal to calculate the spectral emissivity of the sample. This provides a more accurate understanding of the sample's surface morphology, structural characteristics, and spectral emissivity, enabling simultaneous in-situ measurement of phase structure and spectral emissivity under high-temperature and atmospheric / vacuum conditions. This facilitates subsequent research on the relationship between high-temperature phase structure and radiative thermal properties. This solves the technical problem in related technologies that lacks simultaneous measurement of spectral radiation thermophysical properties and phase state under high temperature conditions, and makes it difficult to obtain more accurate actual sample performance at high temperatures.

[0025] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0026] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 This is a schematic diagram of the structure of a synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity provided according to an embodiment of this application; Figure 2 This is a flowchart of a method for simultaneous in-situ measurement of high-temperature Raman spectroscopy and spectral emissivity according to an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity according to another embodiment of this application; Figure 4 This is a schematic diagram of the structure of a ceramic heating cavity according to an embodiment of this application; Figure 5 This is a schematic diagram of the structure of a ceramic heating chamber and a top cover according to an embodiment of this application; Figure 6 This is a schematic diagram of the top cover and high-temperature heating table base provided according to an embodiment of this application; Figure 7 This is a schematic diagram of the principle of a synchronous in-situ measurement device for high-temperature Raman spectroscopy and spectral emissivity provided in an embodiment of this application; Figure 8 This is a schematic diagram of the structure of an electronic device provided according to an embodiment of this application.

[0027] Among them, 1-Synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity, 1-Laser modulation module, 2-Near-infrared monochromatic light source irradiation module, 3-High-temperature heating module, 4-Microscopic confocal optical path module, 5-Visible light imaging module, 6-Raman spectroscopy measurement module, 7-Thermal radiation spectroscopy measurement module, 8-First reflecting mirror, 9-First dichroic mirror, 10-Second dichroic mirror, 11-Beam splitter, 12-Second reflecting mirror, 13-Third dichroic mirror, 14-Third reflecting mirror, 15-Laser, 16-Mechanical shutter, 17-Neutral attenuator, 18-Beam expander, 19-Visible light imaging sensor, 20-First flange, 21-Second flange, 22-Third flange, 23-Fourth flange, 24-Fifth flange, 25-Microscope, 2 6-Visible light source, 27-High temperature heating stage, 28-Sample to be tested, 29-First lens, 30-Spectrometer, 31-Second lens, 32-Near-infrared monochromatic light source, 33-Third lens, 34-Raman spectrometer, 35-Ceramic heating cavity, 36-Thermocouple, 37-Sample chamber, 38-Top cover, 39-Quartz optical window, 40-Cold channel and purge gas path, 41-High temperature heating stage base, 42-Gas path channel, 43-Double-layer metal heat shield; 200-Synchronous in-situ measurement device for high temperature Raman spectroscopy and spectral emissivity, 201-Focusing module, 202-First acquisition module, 203-Second acquisition module, 204-Third acquisition module, 205-Calculation module; 801-Memory, 802-Processor, 803-Communication interface. Detailed Implementation

[0028] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0029] The following describes a synchronous in-situ measurement system and method for high-temperature Raman spectroscopy and spectral emissivity according to embodiments of this application, with reference to the accompanying drawings. Addressing the technical problems mentioned in the background art, such as the lack of synchronous measurement of spectral radiation thermophysical properties and phase state at high temperatures, and the difficulty in obtaining more accurate actual sample performance at high temperatures, this application provides a synchronous in-situ measurement method for high-temperature Raman spectroscopy and spectral emissivity. In this method, a synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity can be used to simultaneously measure the high-temperature Raman spectrum and spectral emissivity of the sample under test. During actual measurement, a microscopic confocal optical path module is used to transmit the emitted light, so that continuous laser and near-infrared light are simultaneously focused on the surface of the sample under test, and simultaneously... The test sample surface transmits light based on Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated by light emission. The surface morphology of the test sample is obtained using the visible light reflection signal, the structural characteristics are obtained using the Raman spectral signal, and the spectral emissivity is calculated using the thermal radiation spectral signal and the near-infrared light reflection signal. This allows for more accurate determination of the surface morphology, structural characteristics, and spectral emissivity of the test sample. It enables simultaneous in-situ measurement of phase structure and spectral emissivity under high temperature and atmospheric / vacuum conditions, facilitating subsequent research on the relationship between high-temperature phase structure and radiation thermophysical properties. This solves the technical problem in related technologies of lacking simultaneous measurement of spectral radiation thermophysical properties and phase state at high temperatures, and the difficulty in obtaining more accurate actual sample performance at high temperatures.

[0030] Specifically, Figure 1 This is a schematic diagram of the structure of a synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity provided in an embodiment of this application.

[0031] like Figure 1 As shown, the synchronous in-situ measurement system 100 for high-temperature Raman spectroscopy and spectral emissivity includes: a laser modulation module 1, a near-infrared monochromatic light source irradiation module 2, a high-temperature heating module 3, a microscopic confocal optical path module 4, a visible light imaging module 5, a Raman spectroscopy measurement module 6, and a thermal radiation spectroscopy measurement module 7.

[0032] Specifically, laser modulation module 1 is used to generate continuous laser light.

[0033] In actual implementation, the embodiments of this application can use the laser modulation module 1 to generate continuous laser. The laser wavelength can be set according to the actual measurement requirements, and the laser energy and laser duty cycle can be adjusted. The laser emitted by the laser modulation module 1 can be expanded and transmitted through the confocal optical path module 4, and finally focused onto the upper surface of the sample to be tested to generate a Raman signal.

[0034] Near-infrared monochromatic light source irradiation module 2 is used to emit near-infrared light.

[0035] The spectral range of the near-infrared monochromatic light source can be selected according to the actual situation. The light source can be an LED light source or a laser source. After emitting near-infrared light, the light is transmitted through the confocal optical path module 4 and finally focused onto the upper surface of the sample to be tested. The measurement of the spectral reflectance of the sample surface provides the irradiation conditions of the light source.

[0036] The high-temperature heating module 3 is used to fix the sample to be tested and to heat the sample to be tested.

[0037] The high-temperature heating module 3 can be used to fix the sample to be tested and adjust the position of the sample to be tested, so that the high-temperature heating stage of the high-temperature heating module 3 can be positioned and cooperate with the microscopic confocal optical path module 4. After the position is adjusted, the sample to be tested can be heated to facilitate subsequent measurement.

[0038] The high-temperature heating module 3 may include a high-temperature heating stage and a displacement stage. The displacement stage is used to adjust the position so that the high-temperature heating stage can be positioned and coordinated with the microscope in the microscopic confocal imaging optical path module 4.

[0039] At the center of the high-temperature heating stage is a ceramic heating chamber, inside which resistance heating wires are arranged, and the heating temperature is controlled by thermocouples and a PID circuit. The sample chamber is located in the upper middle area of ​​the ceramic heating chamber and is used to fix the sample. The upper part of the ceramic heating chamber is a cover, with a water-cooling channel and a purge gas path integrated in the middle. A quartz optical window is located in the center of the cover, and the quartz window is coaxial with the microscope lens. The lower part of the ceramic heating chamber is the base of the high-temperature heating stage, equipped with a water-cooling system and a gas path for introducing protective gas or evacuating. The outer side of the ceramic heating chamber is equipped with a double-layer metal heat shield.

[0040] The microscopic confocal optical path module 4 is used to transmit continuous laser and near-infrared light, so that the continuous laser and near-infrared light are simultaneously focused on the surface of the sample to be tested, and the Raman spectral signal, thermal radiation spectral signal and near-infrared light reflection signal generated on the surface of the sample to be tested are transmitted simultaneously.

[0041] To achieve multi-module, multi-modal measurement, this application employs a confocal optical path design to perform confocal imaging using Raman incident laser light, Raman scattered light, thermal radiation light, visible imaging light, and near-infrared irradiation light. The confocal optical path is coupled through a series of dichroic mirrors, reflecting mirrors, and beam splitters, using the sample under test in the high-temperature heating module 3 as the measurement object for confocal imaging.

[0042] The visible light imaging module 5 is used to emit monochromatic visible light so that the surface of the sample under test generates a visible light reflection signal based on the monochromatic visible light, and to receive the visible light reflection signal to obtain the surface morphology of the sample under test.

[0043] Furthermore, in this embodiment, the visible light source of the visible light imaging module 5 can be placed in the field of view of the optical path between the microscope and the sample to be tested. The visible light reflection signal of the sample surface is collected by the microscope and then transmitted through the microscopic confocal optical path module 4. After passing through the dichroic mirror DM3 and the reflector, it is transmitted to the visible light imaging sensor to realize in-situ observation of the sample surface morphology.

[0044] Raman spectroscopy measurement module 6 is used to receive Raman spectral signals to obtain the structural characteristics of the sample under test based on the Raman spectral signals.

[0045] The Raman spectral signal generated on the surface of the high-temperature sample is collected by a microscope, transmitted through the microscopic confocal optical path module 4, focused by a lens, and coupled to the Raman spectrometer via optical fiber. The Raman spectra are then acquired by the CCD sensor configured in the Raman spectrometer.

[0046] The thermal radiation spectroscopy measurement module 7 is used to receive thermal radiation spectral signals and near-infrared light reflection signals, so as to calculate the spectral emissivity and temperature of the sample under test using the thermal radiation spectral signals.

[0047] One possible approach is to collect the thermal radiation spectral signal from the surface of a high-temperature sample using a microscope, transmit the light through a confocal optical path module 4, and then sequentially pass through a dichroic mirror and a semi-transparent, semi-reflective beam splitter before coupling it to a spectrometer via a lens for thermal radiation emission signal acquisition. By measuring the thermal radiation spectral signal from the sample surface, the spectral emissivity of the sample can be determined.

[0048] Based on this, such as Figure 2 As shown, the method for simultaneous in-situ measurement of high-temperature Raman spectroscopy and spectral emissivity in embodiments of this application may include the following steps: In step S201, based on the synchronous in-situ measurement task, continuous laser and near-infrared light are simultaneously focused onto the surface of the sample to be tested.

[0049] In actual implementation, the embodiments of this application can acquire synchronous in-situ measurement tasks to determine the sample to be tested and related measurement parameters.

[0050] In step S202, Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated on the surface of the sample under test based on continuous laser, near-infrared light, and visible light are acquired.

[0051] As one possible way to achieve this, utilizing, for example Figure 1The synchronous in-situ measurement system 100 for high-temperature Raman spectroscopy and spectral emissivity shown in this application embodiment can focus the continuous laser generated by the laser modulation module 1 and the near-infrared light emitted by the near-infrared monochromatic light source irradiation module 2 onto the surface of the sample to be tested through the microscopic confocal imaging optical path module 4, and transmit the Raman spectral signal and thermal radiation spectral signal generated on the surface of the sample to be tested, so that the Raman spectroscopy measurement module 6 can receive the Raman spectral signal and the thermal radiation spectroscopy measurement module 7 can receive the thermal radiation spectral signal.

[0052] The visible light imaging module 5 can also emit monochromatic visible light to generate a visible light reflection signal on the surface of the sample under test based on the monochromatic visible light, and receive the visible light reflection signal.

[0053] In step S203, the surface morphology of the sample to be tested is obtained based on the visible light reflection signal.

[0054] Based on the visible light reflection signal, the embodiments of this application can utilize the visible light imaging module 5 to conduct in-situ observations of the sample surface morphology.

[0055] In step S204, the structural characteristics of the sample to be tested are obtained based on the Raman spectral signal.

[0056] Based on the Raman spectral signal, the embodiments of this application can use the Raman spectral measurement module 6 to obtain the laser emission information of the laser modulation module 1, so as to use the laser emission information to synchronize the Raman spectral signal and the continuous laser. For example, the timing CCD sensor, the laser and the signal controller can be connected to realize the synchronization of Raman spectral signal acquisition and laser to obtain the structural characteristics of the sample to be tested.

[0057] In step S205, the spectral emissivity and temperature of the sample under test are calculated using thermal radiation spectral signals and near-infrared light reflection signals to complete the synchronous in-situ measurement task and obtain the spectral radiation thermal properties and phase state of the sample under test at the same moment.

[0058] Based on the thermal radiation spectrum signal, the embodiments of this application can use the thermal radiation spectrum measurement module 7 to calculate the spectral emissivity and temperature, so as to combine the previously obtained surface morphology and structural characteristics to obtain the spectral radiation thermal properties and phase state of the sample under test at the same moment.

[0059] Optionally, in one embodiment of this application, the spectral emissivity and temperature of the sample under test are calculated using thermal radiation spectral signals and near-infrared light reflection signals, including: obtaining the broadband radiation spectral intensity of the sample surface under near-infrared light off conditions; and inputting the broadband radiation spectral intensity and the surface temperature of the sample surface into a pre-constructed spectral emissivity calculation expression to obtain the spectral emissivity.

[0060] As one possible approach, embodiments of this application can pre-construct a spectral emissivity calculation expression, and input the data obtained during actual testing into the calculation expression to obtain the spectral emissivity.

[0061] Optionally, in one embodiment of this application, before inputting the effective surface radiant intensity and the current surface temperature of the sample surface to be tested into the pre-constructed spectral emissivity calculation expression, the method further includes: determining the directional-directional spectral reflectance of the sample surface at the target wavelength and surface temperature using the bidirectional reflectance distribution function of the sample surface, the incident angle and orientation angle of near-infrared light; measuring the directional-hemispherical reflectance of the sample surface reflecting near-infrared light at the target wavelength and surface temperature; calculating the ratio of the directional-directional spectral reflectance to the directional-hemispherical reflectance of near-infrared light; obtaining the equivalent radiation formed by near-infrared light incident on the sample surface at the target wavelength and surface temperature based on the ratio and spectral radiant intensity, and obtaining the incident effective radiant intensity of the sample surface under near-infrared light-on conditions using the equivalent radiation; and constructing the spectral emissivity calculation expression using the incident effective radiant intensity, wherein the expression for the incident effective radiant intensity is: , in, , Indicates directional-directional spectral reflectance. Indicates directional-hemispherical reflectivity. Indicates the ratio. It represents equivalent radiation.

[0062] In actual implementation, the center wavelength is... A monochromatic radiation source, after passing through a mirror and a microscope, is focused onto the surface of a high-temperature sample. The effective spectral radiation intensity of the sample surface is measured in both "on" and "off" states of the radiation source. , They are represented as follows: (1) (2) in, At temperature T The center wavelength of the irradiation source ,direction r The directional spectral emissivity of the sample under the following conditions; It is the distribution of blackbody spectral radiation intensity at the same temperature and wavelength; It is the spectral radiation intensity of a monochromatic radiation source incident on the sample surface; The angle between the incident direction and the normal; The solid angle of the incident radiation; The bidirectional reflectance distribution function of the sample surface (i The incident direction, r (where the reflection direction is), and since the bidirectional reflection distribution function is reciprocal, it can be written as... .

[0063] Based on the definition of the bidirectional reflectance distribution function, directional-directional spectral reflectance , They are represented as follows: (3) parameter Defined as directional-directional spectral reflectance With directional-hemispherical reflectivity The ratio: (4) Based on formulas (3) and (4), formula (1) can be rewritten as: (5) in, Defined as the equivalent radiation incident on the sample surface from a monochromatic radiation source. Under sample room temperature conditions, the effective radiation (i.e., reflected radiation) of the sample surface can be obtained by measuring the known directional hemispherical reflectivity and the effective radiation of the sample surface. It is considered as measuring a known quantity.

[0064] Optionally, in one embodiment of this application, before inputting the effective light radiation intensity and the current surface temperature of the sample to be tested into a pre-constructed spectral emissivity calculation expression, the method further includes: measuring the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation at the target wavelength; calculating the calibrated spectral emissivity at the target wavelength and surface temperature of the sample to be tested using the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation; and inverting the surface temperature using the calibrated spectral emissivity, wherein the calculation expression for the calibrated spectral emissivity is: , in, Indicates the calibrated spectral emissivity. Indicates the incident effective light radiation intensity. This indicates the intensity of the effective light radiation that was not incident.

[0065] The expression for calculating the surface temperature is as follows: , in, T Indicates surface temperature. This represents the distribution of blackbody spectral radiation intensity at the target wavelength.

[0066] Combining formulas (2) and (5), by measuring wavelength Radiation intensity measurement Calculations obtained at temperature T ,wavelength Spectral emissivity at the following levels: (6) Specific wavelength The determination of the spectral emissivity provides a calibration basis for radiation thermometry. Substituting the obtained spectral emissivity data into formula (2) allows the inverse calculation of the surface temperature of the high-temperature sample. (7) The above describes the basic principle of the non-contact temperature measurement method for micro-regions of samples according to embodiments of this application.

[0067] In the thermal radiation measurement module 7, the intensity of the radiation spectrum can be measured across a wide spectral band. The measurement, under the known temperature of the sample to be measured T Under the given conditions, combined with formula (8), the sample temperature is calculated. T The spectral emissivity under high temperature phase transition is measured to achieve in-situ measurement of spectral emissivity during high temperature phase transition.

[0068] (8) Furthermore, embodiments of this application can also evaluate the measurement results.

[0069] In this application, the embodiments can be based on the wavelength of a monochromatic light source. Radiation intensity below Measurement uncertainty According to formula (7) and uncertainty propagation theory, the surface temperature of the sample to be measured is... T Measurement uncertainty Represented as: (9) in, (10) Based on temperature T and radiation intensity Measurement uncertainty According to formula (8) and uncertainty propagation theory, the measurement uncertainty of spectral emissivity is... Represented as: (11) in, (12) Combination Figures 3 to 6As shown, the working principle of the synchronous in-situ measurement system 100 for high-temperature Raman spectroscopy and spectral emissivity of this application is explained in detail with reference to one embodiment.

[0070] like Figures 3-6 As shown, the synchronous in-situ measurement system 100 for high-temperature Raman spectroscopy and spectral emissivity according to an embodiment of this application may include: a laser modulation module 1, a near-infrared monochromatic light source irradiation module 2, a high-temperature heating module 3, a microscopic confocal optical path module 4, a visible light imaging module 5, a Raman spectroscopy measurement module 6, a thermal radiation spectroscopy measurement module 7, a first reflecting mirror 8, a first dichroic mirror 9, a second dichroic mirror 10, a beam splitter 11, a second reflecting mirror 12, a third dichroic mirror 13, a third reflecting mirror 14, a laser 15, a mechanical shutter 16, a neutral density filter 17, and a beam expander 18. Visible light imaging sensor 19, first flange 20, second flange 21, third flange 22, fourth flange 23, fifth flange 24, microscope 25, visible light source 26, high-temperature heating stage 27, sample to be tested 28, first lens 29, spectrometer 30, second lens 31, near-infrared monochromatic light source 32, third lens 33, Raman spectrometer 34, ceramic heating cavity 35, thermocouple 36, sample chamber 37, top cover 38, quartz optical window 39, cold channel and purge gas path 40, high-temperature heating stage base 41, gas path channel 42 and double-layer metal heat shield 43.

[0071] The laser modulation module 1 may include a laser 15, a mechanical shutter 16, a neutral density filter 17, a beam expander 18, and a first flange 20. The laser 15 can generate continuous laser light with a wavelength of 532 nm. The laser energy can be adjusted by the neutral density filter 17, and the laser duty cycle can be adjusted by the mechanical shutter 16. The laser 15 is connected to the microscopic confocal optical path module 4 via the flange 20. The emitted laser light is excited, expanded by the beam expander 18, and then transmitted through the microscopic confocal optical path module 4. Finally, it is focused by the microscope 25 onto the upper surface of the sample 28 to be tested in the high-temperature heating module 7 to generate a Raman signal.

[0072] The near-infrared monochromatic light source irradiation module 2 may include: a fourth flange 23, a second lens 31, and a near-infrared monochromatic light source 32. The spectral range of the near-infrared monochromatic light source 32 is selected to be 800-1000nm, preferably 850nm or 900nm, with a half-bandwidth <20nm. It can be an LED light source or a laser source. The near-infrared monochromatic light source 32 is connected to the microscopic confocal optical path module 4 through the fourth flange 23. The emitted near-infrared light first passes through the second lens 31, and then is transmitted through the microscopic confocal optical path module 4. It then passes sequentially through the second reflecting mirror 12, the beam splitter 11, and the dichroic mirror (9, 10), and is finally focused by the microscope 25 onto the upper surface of the sample 28 to be tested in the high-temperature heating module 3. This provides the light source irradiation conditions for measuring the spectral reflectance of the sample surface and enables the determination of the sample surface temperature.

[0073] The high-temperature heating module 3 may include a high-temperature heating stage 27 for fixing the sample 28 to be tested, and may also include a displacement stage for position adjustment, so that the high-temperature heating stage 27 can be positioned and engaged with the microscope 25 of the confocal imaging optical path module 4. At the center of the high-temperature heating stage 27 is a ceramic heating cavity 35, inside which resistance heating wires are arranged, and the heating temperature is controlled by a thermocouple 36 and a PID circuit. The sample chamber 37 is located in the upper middle area of ​​the ceramic heating cavity 35 and is used to fix the sample 28. The upper part of the ceramic heating cavity is a cover 38, which integrates a water cooling channel and a purge gas path. A quartz optical window 39 is located at the center of the cover, and the quartz window is coaxial with the lens of the microscope 25. The lower part of the ceramic heating cavity 35 is the high-temperature heating stage base 41, equipped with a water cooling system and a gas path for introducing protective gas or evacuating. The outer side of the ceramic heating cavity has a double-layer metal heat shield.

[0074] The microscopic confocal optical path module 4 includes: a first reflecting mirror 8, a first dichroic mirror 9, a second dichroic mirror 10, a beam splitter 11, a second reflecting mirror 12, a third dichroic mirror 13, a third reflecting mirror 14, and a microscope 25. To achieve multi-module, multi-modal measurement, this embodiment adopts a confocal optical path design to perform confocal imaging using Raman incident laser light, Raman scattered light, near-infrared irradiation light, thermal radiation light, and visible imaging light. The confocal optical path is coupled through a series of dichroic mirrors (9, 10, 13), reflecting mirrors (8, 12, 14), and beam splitter 11. The sample 28 in the high-temperature heating module 3 is used as the measurement object for confocal imaging. The microscope 25 can be used for focusing and signal collection.

[0075] The visible light imaging module 5 may include: a visible light source 26, a visible light imaging sensor 19, and a second flange 21. The visible light source 26 is placed in the field of view of the optical path between the microscope 25 and the sample 28. The visible light reflection signal of the sample surface is collected by the microscope 25 and transmitted through the microscopic confocal optical path module 4. After passing through the first dichroic mirror 9 and the first reflecting mirror 8, the light is transmitted to the visible light imaging sensor 19, so as to realize the in-situ observation of the surface morphology of the sample.

[0076] The Raman spectroscopy measurement module 6 may include a third flange 22, a third lens 33, and a Raman spectrometer 34. The Raman spectral signal generated on the surface of the high-temperature sample 28 is collected by the microscope 25 and transmitted through the microscopic confocal optical path module 4. It then passes through dichroic mirrors (9, 10, 13) and the third reflecting mirror 14, and is then focused by the lens 33 and coupled to the Raman spectrometer 34 via optical fiber. The Raman spectra are then acquired by the CCD sensor configured in the Raman spectrometer 34. The CCD sensor, laser 15, and signal controller are connected to achieve synchronization between Raman spectral signal acquisition and laser operation.

[0077] The thermal radiation spectral measurement module 7 may include a fifth flange 24, a first lens 29, and a spectrometer 30. The thermal radiation spectral signal from the surface of the high-temperature sample 28 is collected by the microscope 25, transmitted through the microscopic confocal optical path module 4, and sequentially transmitted through the first dichroic mirror 9, the second dichroic mirror 10, and the semi-transparent, semi-reflective beam splitter 11 before being coupled to the spectrometer 30 via the first lens 29 for thermal radiation emission signal acquisition. The spectral emissivity of the sample is determined by measuring the thermal radiation spectral signal from its surface.

[0078] In summary, the embodiments of this application employ multimodal confocal microscopy imaging measurement technology, and the established system is suitable for synchronous in-situ measurement of Raman spectra and spectral emissivity during high-temperature phase transitions. Furthermore, a non-contact measurement method for high-temperature microscopic regions based on online calibration of emissivity at a specific wavelength has been established, solving the problem in related technologies where the high-temperature temperature of microscopic regions on the sample surface is difficult to measure or cannot be accurately measured. This enables precise measurement of the high-temperature spectral emissivity of microscopic regions of samples.

[0079] According to the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity proposed in the embodiments of this application, the synchronous in-situ measurement of the high-temperature Raman spectrum and spectral emissivity of the sample under test can be achieved using a synchronous in-situ measurement system of high-temperature Raman spectroscopy and spectral emissivity. In actual measurement, the emitted light is transmitted using a microscopic confocal optical path module, so that continuous laser and near-infrared light are simultaneously focused on the surface of the sample under test. At the same time, the Raman spectral signal, thermal radiation spectral signal, near-infrared light reflection signal and visible light reflection signal generated by the emitted light are transmitted to the surface of the sample under test. Then, the surface morphology of the sample under test is obtained using the visible light reflection signal, the structural characteristics of the sample under test are obtained using the Raman spectral signal, and the spectral emissivity of the sample under test is calculated using the thermal radiation spectral signal and the near-infrared light reflection signal, so as to obtain a more accurate surface morphology, structural characteristics and spectral emissivity of the sample under test. This method realizes synchronous in-situ measurement of phase structure and spectral emissivity under high temperature and atmosphere / vacuum conditions, which facilitates subsequent research on the relationship between high-temperature phase structure and radiation thermophysical properties. This solves the technical problem in related technologies that lacks simultaneous measurement of spectral radiation thermophysical properties and phase state under high temperature conditions, and makes it difficult to obtain more accurate actual sample performance at high temperatures.

[0080] Next, referring to the accompanying drawings, a synchronous in-situ measurement device for high-temperature Raman spectroscopy and spectral emissivity according to an embodiment of this application is described.

[0081] Figure 7 This is a schematic diagram of the structure of the synchronous in-situ measurement device for high-temperature Raman spectroscopy and spectral emissivity according to an embodiment of this application.

[0082] like Figure 7 As shown, the synchronous in-situ measurement device 200 for high-temperature Raman spectroscopy and spectral emissivity includes: a focusing module 201, a first acquisition module 202, a second acquisition module 203, a third acquisition module 204, and a calculation module 205.

[0083] Specifically, the focusing module 201 is used to simultaneously focus continuous laser light and near-infrared light onto the surface of the sample to be measured based on a synchronous in-situ measurement task.

[0084] The first acquisition module 202 is used to acquire Raman spectral signals, thermal radiation spectral signals, near-infrared light reflection signals, and visible light reflection signals generated on the surface of the sample to be tested based on continuous laser, near-infrared light, and visible light.

[0085] The second acquisition module 203 is used to obtain the surface morphology of the sample to be tested based on the visible light reflection signal.

[0086] The third acquisition module 204 is used to obtain the structural characteristics of the sample under test based on the Raman spectral signal.

[0087] The calculation module 205 is used to calculate the spectral emissivity and temperature of the sample under test using thermal radiation spectral signals and near-infrared light reflection signals, so as to complete the synchronous in-situ measurement task and obtain the spectral radiation thermal properties and phase state of the sample under test at the same moment.

[0088] Optionally, in one embodiment of this application, the calculation module 205 includes: an acquisition unit and a first calculation unit.

[0089] The acquisition unit is used to acquire the broadband radiation intensity of the sample surface under near-infrared light off conditions.

[0090] The first calculation unit is used to input the broadband radiation spectral intensity and the surface temperature of the sample surface to be measured into a pre-constructed spectral emissivity calculation expression to obtain the spectral emissivity.

[0091] Optionally, in one embodiment of this application, the calculation module 205 further includes: a determination unit, a first measurement unit, a second calculation unit, a third calculation unit, and a fourth calculation unit.

[0092] The determining unit is used to determine the orientation-orientation spectral reflectance of the sample surface at the target wavelength and surface temperature by utilizing the bidirectional reflectance distribution function of the sample surface, the incident angle and orientation angle of near-infrared light.

[0093] The first measurement unit is used to measure the directional-hemispherical reflectivity of the sample surface reflecting near-infrared light at the target wavelength and surface temperature.

[0094] The second calculation unit is used to calculate the ratio of directional-directional spectral reflectance to near-infrared directional-hemispherical reflectance.

[0095] The third calculation unit is used to obtain the equivalent radiation formed by near-infrared light incident on the surface of the sample under the target wavelength and surface temperature based on the ratio and spectral radiation intensity, and to obtain the incident effective light radiation intensity of the sample surface under the near-infrared light on condition using the equivalent radiation.

[0096] The fourth calculation unit is used to construct an expression for calculating spectral emissivity using the incident effective light radiation intensity.

[0097] Optionally, in one embodiment of this application, the expression for the incident effective light radiation intensity is: , in, , Indicates directional-directional spectral reflectance. Indicates directional-hemispherical reflectivity. Indicates the ratio. It represents equivalent radiation.

[0098] Optionally, in one embodiment of this application, the calculation module 205 further includes: a second measurement unit, a fifth calculation unit, and an inversion unit.

[0099] The second measurement unit is used to measure the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation at the target wavelength.

[0100] The fifth calculation unit is used to calculate the calibrated spectral emissivity of the sample at the target wavelength and surface temperature using the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation.

[0101] Inversion unit, used to invert surface temperature using calibrated spectral emissivity.

[0102] Optionally, in one embodiment of this application, the expression for calculating the calibrated spectral emissivity is: , in, Indicates the calibrated spectral emissivity. Indicates the incident effective light radiation intensity. This indicates the intensity of the effective light radiation that was not incident.

[0103] Optionally, in one embodiment of this application, the expression for calculating the surface temperature is: , in, T Indicates surface temperature. This represents the distribution of blackbody spectral radiation intensity at the target wavelength.

[0104] It should be noted that the explanation of the above-mentioned embodiment of the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity also applies to the synchronous in-situ measurement device of high-temperature Raman spectroscopy and spectral emissivity in this embodiment, and will not be repeated here.

[0105] Figure 8 A schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device may include: The memory 801, the processor 802, and the computer program stored on the memory 801 and capable of running on the processor 802.

[0106] When the processor 802 executes the program, it implements the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity provided in the above embodiments.

[0107] Furthermore, electronic devices also include: Communication interface 803 is used for communication between memory 801 and processor 802.

[0108] The memory 801 is used to store computer programs that can run on the processor 802.

[0109] The memory 801 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0110] If the memory 801, processor 802, and communication interface 803 are implemented independently, then the communication interface 803, memory 801, and processor 802 can be interconnected via a bus to complete communication between them. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized into address buses, data buses, control buses, etc. For ease of representation, Figure 8 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0111] Optionally, in a specific implementation, if the memory 801, processor 802, and communication interface 803 are integrated on a single chip, then the memory 801, processor 802, and communication interface 803 can communicate with each other through an internal interface.

[0112] The processor 802 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application.

[0113] This embodiment also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method for synchronous in-situ measurement of high-temperature Raman spectra and spectral emissivity.

[0114] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the synchronous in-situ measurement method for high-temperature Raman spectroscopy and spectral emissivity provided in this embodiment of the invention.

[0115] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0116] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0117] Any process or method described in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or N executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0118] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable medium may be paper or other suitable media on which the program can be printed, since the program can be obtained electronically by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0119] It should be understood that the various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0120] Those skilled in the art will understand that all or part of the steps of the methods described in the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it includes one or a combination of the steps of the method embodiments.

[0121] Furthermore, the functional units in the various embodiments of this application can be integrated into a processing module, or each unit can exist physically separately, or two or more units can be integrated into a module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0122] The storage medium mentioned above can be a read-only memory, a disk, or an optical disk, etc. Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of this application.

Claims

1. A synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity, characterized in that, include: Laser modulation module, used to generate continuous laser light; Near-infrared monochromatic light source irradiation module, used to emit near-infrared light; A high-temperature heating module is used to fix the sample to be tested and to heat the sample to be tested; The microscopic confocal optical path module is used to transmit light from the continuous laser and the near-infrared light, so that the continuous laser and the near-infrared light are simultaneously focused on the surface of the sample to be tested, and simultaneously transmit light from the Raman spectral signal, thermal radiation spectral signal and near-infrared light reflection signal generated on the surface of the sample to be tested. A visible light imaging module is used to emit monochromatic visible light so that the surface of the sample under test generates a visible light reflection signal based on the monochromatic visible light, and to receive the visible light reflection signal to obtain the surface morphology of the sample under test; A Raman spectroscopy measurement module is used to receive the Raman spectral signal in order to obtain the structural characteristics of the sample under test based on the Raman spectral signal. A thermal radiation spectroscopy measurement module is used to receive the thermal radiation spectral signal and calculate the spectral emissivity and temperature of the sample under test using the thermal radiation spectral signal and the near-infrared light reflection signal.

2. A method for simultaneous in-situ measurement of high-temperature Raman spectroscopy and spectral emissivity, characterized in that, The synchronous in-situ measurement system for high-temperature Raman spectroscopy and spectral emissivity as described in claim 1 is used, wherein the method includes the following steps: Based on the synchronous in-situ measurement task, continuous laser and near-infrared light are simultaneously focused onto the surface of the sample to be measured; The Raman spectral signal, thermal radiation spectral signal, near-infrared light reflection signal, and visible light reflection signal generated on the surface of the sample under test based on the continuous laser, the near-infrared light, and the visible light are acquired. The surface morphology of the sample under test is obtained based on the visible light reflection signal. The structural characteristics of the sample under test are obtained based on the Raman spectral signal. The spectral emissivity and temperature of the sample under test are calculated using the thermal radiation spectrum signal and the near-infrared light reflection signal to complete the synchronous in-situ measurement task and obtain the spectral radiation thermal properties and phase state of the sample under test at the same moment.

3. The method according to claim 2, characterized in that, The calculation of the spectral emissivity and temperature of the sample under test using the thermal radiation spectral signal and the near-infrared light reflectance signal includes: Obtain the broadband radiation intensity of the surface of the sample under test under the near-infrared light off condition; The broadband radiation intensity and the surface temperature of the sample under test are input into a pre-constructed spectral emissivity calculation expression to obtain the spectral emissivity.

4. The method according to claim 3, characterized in that, Before inputting the effective light radiation intensity of the surface and the current surface temperature of the sample to be tested into the pre-constructed spectral emissivity calculation expression, the following steps are also included: The orientation-orientation spectral reflectance of the sample surface at the target wavelength and surface temperature is determined using the bidirectional reflectance distribution function of the sample surface, the incident angle and the orientation angle of the near-infrared light. The directional-hemispherical reflectivity of the surface of the sample under test reflecting near-infrared light at the target wavelength and the surface temperature is measured. Calculate the ratio of the directional-directional spectral reflectance to the directional-hemispherical reflectance of the near-infrared light; Based on the ratio and the spectral radiation intensity, the equivalent radiation formed by the near-infrared light incident on the surface of the sample under the target wavelength and the surface temperature is obtained, and the effective incident light radiation intensity of the sample surface under the near-infrared light on condition is obtained using the equivalent radiation. The spectral emissivity calculation expression is constructed using the incident effective light radiation intensity.

5. The method according to claim 4, characterized in that, The expression for the incident effective light radiation intensity is: ， in, , This represents the directional-directional spectral reflectance. This represents the directional-hemispherical reflectivity. This indicates the ratio. This indicates the equivalent radiation.

6. The method according to claim 4, characterized in that, Before inputting the effective light radiation intensity of the surface and the current surface temperature of the sample to be tested into the pre-constructed spectral emissivity calculation expression, the following steps are also included: Measure the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation at the target wavelength; The calibrated spectral emissivity of the sample under test at the target wavelength and the surface temperature is calculated using the incident effective light radiation intensity, the non-incident effective light radiation intensity, and the equivalent radiation. The surface temperature is inverted using the calibrated spectral emissivity.

7. The method according to claim 6, characterized in that, The formula for calculating the calibrated spectral emissivity is as follows: ， in, This indicates the emissivity of the calibrated spectrum. This indicates the incident effective light radiation intensity. This indicates the intensity of the unincident effective light radiation.

8. The method according to claim 6, characterized in that, The expression for calculating the surface temperature is: ， in, T This indicates the surface temperature. This represents the blackbody spectral radiation intensity distribution at the target wavelength.

9. An electronic device, characterized in that, include: The memory, the processor, and the computer program stored in the memory and executable on the processor, the processor executing the program to implement the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity as described in any one of claims 2-8.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, The program is executed by the processor to implement the synchronous in-situ measurement method of high-temperature Raman spectroscopy and spectral emissivity as described in any one of claims 2-8.

Images