Measurement and control method and device for bonding wave

Abstract

The invention discloses a bonding wave measurement and control method and a bonding wave measurement and control device, which are used for realizing accurate control on the position of a bonding wave, so that the bonding wave is uniformly diffused and the bonding quality is improved. The method comprises the steps that first distance measuring sensors, adjacent to the center of a wafer, of a chuck in all directions serve as starting points, and vacuum at the first distance measuring sensors is released firstly; in the bonding wave diffusion process, combining all real-time difference values from the current distance measuring sensor to the outermost distance measuring sensor in each direction into an array; respectively calculating correlation coefficients of all other directions and the reference direction by taking the set direction as the reference direction; calculating the vacuum adsorption values of the current distance measuring sensors in all other directions according to the correlation coefficient and the vacuum adsorption value around each distance measuring sensor in the reference direction; adjusting the vacuum of the corresponding adsorption points in other directions according to the vacuum adsorption value, and releasing the vacuum when the bonding wave reaches the current position of the distance measuring sensor; and the bonding wave is diffused to the next distance measuring sensor, and the next distance measuring sensor is used as the current distance measuring sensor to return to the step 2 until the distance measuring sensor on the outermost side is processed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing and wafer bonding, and particularly to the technology for monitoring and controlling bonding wave in wafer bonding process. BACKGROUND

[0002] Wafer bonding is a technology of sticking two or more wafers together through a specific process to form an integrated structure.

[0003] In mainstream wafer bonding technology, one of them is direct bonding technology, that is, without using any intermediate material, relying on the chemical bond between the atoms on the wafer surface to realize the combination, the bonding strength is high, and the interface is clean. In direct bonding, bonding does not occur instantaneously on the entire wafer surface, but starts from the center of the wafer and spreads to the four corners of the wafer in the form of a "wave" during the wafer bonding process, and finally completes the combination of the entire interface. This "wave" is called "bonding wave".

[0004] The core of the bonding wave is the dynamic process of the wafer interface from "local contact" to "full contact". When bonding, the center regions of the two wafers are usually aligned and an initial pressure is applied, so that the atoms in the center can first reach a close enough distance to form an initial chemical bond. After the initial bonding is formed, the chemical bonds of the interface release energy, and at the same time, the tiny bubbles or water vapor adsorbed on the wafer surface are squeezed out, pushing the surrounding non-contacting areas to gradually fit, forming a similar advancing front of the bonding wave. When the bonding wave spreads to the edge of the wafer, the interface of the entire wafer forms stable chemical bonds, and the bonding process is declared complete.

[0005] The bonding wave is not only an intuitive phenomenon of the bonding process, but also an important basis for judging the bonding quality: if the bonding wave spreads uniformly and without interruption, it means that the wafer surface has high cleanliness and good flatness, and the bonding interface will be more uniform and have higher strength. If the bonding wave spreads and stops or appears abnormally, it usually means that there are contaminants or large particles on the interface or the wafer is warped, which may cause bonding failure or defects.

[0006] In the existing wafer bonding method, most of them use an upper set of needle system to apply a certain pressure to the upper wafer, so that the wafer is partially deformed, the center of the upper wafer is in contact with the lower wafer, and then the vacuum in the region is released from inside to outside, so that the wafers are bonded due to van der Waals force.

[0007] In order to further improve the bonding quality, the industry has been researching bonding wave monitoring means and bonding wave control methods. SUMMARY

[0008] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0009] The purpose of the present application is to solve the above problems, and provide a bonding wave measurement and control method and device, which can realize accurate control of the bonding wave position, so that the bonding wave can be uniformly diffused, and the bonding quality is improved.

[0010] The technical scheme of the present application is as follows: the present application discloses a bonding wave measurement and control method, which comprises the following steps:

[0011] Step 1: the first distance measuring sensor adjacent to the center of the wafer in all directions of the chuck is taken as the starting point, the vacuum at the first distance measuring sensor is released first, and the bonding wave is diffused from the first distance measuring sensor to the second distance measuring sensor in all directions;

[0012] Step 2: during the diffusion of the bonding wave, all real-time differences from the current distance measuring sensor to the outermost distance measuring sensor in each direction are respectively combined into an array;

[0013] Step 3: a set direction is taken as the reference direction, and the correlation coefficients of all other directions with the reference direction are calculated respectively;

[0014] Step 4: according to the correlation coefficients and the vacuum suction values of the distance measuring sensors around the reference direction, the vacuum suction values of the corresponding suction points of the current distance measuring sensors in all other directions are calculated;

[0015] Step 5: according to the calculated vacuum suction values in all other directions, the vacuum of the corresponding suction points in other directions is adjusted, and when the bonding wave reaches the position of the current distance measuring sensor, the vacuum at the current distance measuring sensor in all directions is released;

[0016] Step 6: the bonding wave is diffused to the next distance measuring sensor, and the next distance measuring sensor is taken as the current distance measuring sensor to return to step 2 until the outermost distance measuring sensor is processed.

[0017] According to an embodiment of the bonding wave measurement and control method of the present application, the current distance measuring sensors in each direction form a ring, and all distance measuring sensors form multiple rings, wherein the centers of all rings coincide with the center of the wafer.

[0018] According to an embodiment of the bonding wave measurement and control method of the present application, the ring comprises an inner ring, at least one middle ring and an outer ring from inside to outside.

[0019] In one embodiment of the bonding wave measurement and control method according to the present invention, in all directions, each adjacent direction is spaced by the same angle.

[0020] In one embodiment of the bonding wave measurement and control method according to the present invention, the reference direction is the 0° direction.

[0021] According to an embodiment of the bonding wave measurement and control method of the present invention, the real-time difference of the ranging sensor is the difference between the real-time value of the sensor and the initial value of the sensor, which represents the deformation of the wafer at the adsorption point monitored by the sensor.

[0022] According to an embodiment of the bonding wave measurement and control method of the present invention, in step 3, the correlation coefficient between each direction to be calculated in all other directions and the reference direction is... The calculation formula is:

[0023]

[0024] in, Represents the reference direction array, Represents the first in the reference direction array A number, ranging from 1 to the number of values ​​in the array. This represents the average value of all values ​​in the reference direction array. This represents the array of directions to be calculated. This represents the first direction in the array to be calculated. A number, ranging from 1 to the number of values ​​in the array. This represents the average value of all values ​​in the direction array to be calculated, and ∑ represents the summation operation.

[0025] According to an embodiment of the bonding wave measurement and control method of the present invention, in step 4, the vacuum adsorption value of the adsorption point corresponding to the current ranging sensor in each of all other directions is... The calculation method is as follows:

[0026]

[0027] in, This represents the vacuum adsorption value at the adsorption point corresponding to the current ranging sensor in the reference direction. This represents the vacuum adsorption value at the adsorption point corresponding to the current ranging sensor in the direction to be calculated. The correlation coefficient between the direction to be calculated and the reference direction is given. This represents the real-time difference between the current ranging sensors in the direction to be calculated. This is the real-time difference between the current ranging sensor values ​​in the reference direction.

[0028] The application also discloses a control device for bonded wave, comprising:

[0029] a memory; and

[0030] a processor connected to the memory and configured to implement the control method for bonded wave.

[0031] The application also discloses a computer readable storage medium, which stores computer instructions, and the computer instructions are executed by a processor to implement the control method for bonded wave.

[0032] The application has the following beneficial effects compared with the prior art:

[0033] 1. Improving the monitoring precision of bonded wave:

[0034] The precise correlation between the deformation variable and the bonded wave state is realized, the dynamic data of the bonded wave diffusion is obtained in real time through the multi-direction high-precision ranging sensor of the upper chuck, and the wafer topography change and the bonded wave cannot be accurately corresponded.

[0035] 2. Fine adsorption condition control:

[0036] The independent regulation and control of the directional / area vacuum adsorption port is realized, the abnormal area of the monitored deformation variable is accurately matched with the vacuum value adjustment of the corresponding adsorption port, and the dynamic adjustment of the adsorption condition is realized.

[0037] 3. Optimizing the diffusion uniformity of bonded wave:

[0038] Through the closed-loop control of real-time deformation variable monitoring-dynamic adsorption adjustment, the diffusion speed of the bonded wave in each direction is ensured to be consistent, the bubbles and interface defects caused by uneven diffusion are reduced, and the bonding yield is improved.

[0039] 4. Enhancing the process adaptability:

[0040] The standardized deformation variable-adsorption value adjustment process is established, the dependence on the experience of engineers is reduced, the wafer bonding requirements of different sizes and different rigidities are adapted, and the process stability is improved. BRIEF DESCRIPTION OF DRAWINGS

[0041] The above features and advantages of the present application can be better understood after reading the detailed description of embodiments of the present application in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and the components having similar related properties or features can have the same or similar reference numerals.

[0042] Figure 1 A schematic diagram of a wafer bonding device is shown.

[0043] Figure 2A top view of a wafer bonding apparatus is shown.

[0044] Figure 3 A flow chart of an embodiment of a method of controlling a bonding wave of the present application is shown.

[0045] Figure 4 A top view of a wafer bonding apparatus is shown. Figure 3 A top view of a chuck's suction surface involved in the method embodiment shown.

[0046] Figure 5 A process flow chart of a wafer bonding process method of the present application is shown. DETAILED DESCRIPTION

[0047] The specific embodiments of the present application will exemplify the implementation of the present application, and other advantages and effects of the present application can be easily understood by those skilled in the art from the disclosure. Although the description of the present application will be introduced in combination with the preferred embodiments, this does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0048] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0049] In addition, in the following description, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only used for convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation on the present application.

[0050] It will be understood that, although the terms "first", "second", "third", etc. can be used herein to describe various components, regions, layers and / or sections, these components, regions, layers and / or sections should not be limited by these terms. These terms are simply used to distinguish one component, region, layer or section from another. Thus, terms describing the first component, region, layer and / or section discussed below could also be those of the second component, region, layer and / or section without departing from some embodiments of the present application.

[0051] Figure 1 The structure of wafer bonding equipment is shown. The wafer bonding equipment includes an upper chuck 1, a lower chuck 2, a top pin 7, a vacuum system, and a bonding wave monitoring system. The upper chuck 1 and the lower chuck 2 each have a fixed surface and a suction surface. The bottom surface of the upper chuck 1 suctions an upper wafer 3, and the top surface of the lower chuck 2 suctions a lower wafer 4. There is a through hole in the center of the upper chuck 1, and the top pin 7 moves longitudinally in the through hole under the driving of a pneumatic cylinder.

[0052] Combination Figure 2 As shown, the bonding wave monitoring system is composed of a plurality of high-precision distance measuring sensors 5. The distance measuring sensors 5 are used to detect the vacuum degree of the suction point at the position. A total of n hole positions are distributed in uniformly spaced m directions on the upper chuck, wherein n / m hole positions are distributed in each direction, and m, n and n / m are natural numbers. A high-precision distance measuring sensor 5 is installed at each hole position. The ith hole position in all directions forms the ith ring, wherein i is a natural number from 1 to n / m. For example, 32 hole positions are distributed in 8 directions from 0° to 315° on the upper chuck, and 4 hole positions are distributed in each direction. A high-precision distance measuring sensor 5 is installed at each hole position. Figure 2 As shown, the 8 hole positions formed by the 1st hole positions in all 8 directions form the inner ring, the 8 hole positions formed by the 2nd hole positions in all 8 directions form the first middle ring, the 8 hole positions formed by the 3rd hole positions in all 8 directions form the second middle ring, and the 8 hole positions formed by the 4th hole positions in all 8 directions form the outer ring. The number of distance measuring sensors, the number of hole positions, the distribution of hole positions on the upper chuck, and the arrangement of rings are only examples in this embodiment, and other modifications and extensions can be made, which do not limit the protection scope of the present application.

[0053] The vacuum system is composed of a plurality of vacuum pipelines 6. A vacuum pipeline 6 is arranged around each distance measuring sensor 5, and any vacuum pipeline 6 can independently control the vacuum degree of the suction point monitored by the corresponding distance measuring sensor 5.

[0054] Take the above example of 8-direction 32-hole site as an example to illustrate that under the action of the cylinder, the pin 7 moves downward, driving the upper chuck 1 to move downward, pressing the upper wafer 3, so that the center of the upper wafer 3 is partially deformed to contact the center of the lower wafer 4, and partial bonding occurs at the center position of the upper and lower wafers.

[0055] Under the action of Van der Waals force, the inner ring of the upper wafer 3 also starts to contact the lower wafer 4, at this time, the inner ring in 8 directions (0°, 45°, 90°, 135°, 180°, 225°, 270°, 315° shown in the figure) simultaneously releases the vacuum of the inner ring through the vacuum pipeline, so that the bonding area expands from the center position to the inner ring area.

[0056] The high-precision distance measuring sensor 5 in the 8 directions monitors the deformation amount of the upper wafer at the inner ring position in real time (i.e. the difference between the real-time value of the sensor and the initial value of the sensor), when the deformation amount is greater than or equal to the gap threshold value between the upper and lower wafers, it means that the bonding wave has spread to the inner ring position. At this time, according to the array of the deformation amount combination of the first middle ring, the second middle ring and the outer ring in 8 directions, the vacuum adsorption value of all hole sites in 8 directions at the first middle ring is calculated, so that the diffusion speed of the bonding wave is relatively consistent from the inner ring to the first middle ring. For example, the vacuum adsorption value of the first middle ring in 0° direction is 100bar, the correlation coefficient calculated at the first middle ring in 90° direction is 0.9 and the deformation amount at the first middle ring in 90° direction is greater than that in 0° direction, which means that the diffusion speed from the inner ring area in 90° direction to the first middle ring is faster, so the vacuum adsorption value of the first middle ring in 0° direction needs to be appropriately increased to slow down the diffusion speed of the bonding wave in 90° direction. Similarly, the diffusion from the first middle ring to the second middle ring in each direction, and the diffusion from the second middle ring to the outer ring, also controls the vacuum adsorption value of each hole site on the second middle ring or the outer ring according to this principle to control the diffusion speed of the bonding wave in the corresponding area, so that the bonding wave uniformly diffuses from the center of the wafer to the entire wafer surface, and the bonding between the upper and lower wafers is completed.

[0057] Figure 3 The flow of an embodiment of the bonding wave measurement and control method of the present application is shown. Figure 4 The Figure 3 The adsorption surface of the chuck involved in the method embodiment is shown. Please refer to Figure 3 and Figure 4 The implementation steps of the bonding wave measurement and control method of the present embodiment are described as follows.

[0058] Step 1: The first distance sensor adjacent to the wafer center in all directions of the chuck adsorption surface is the starting point, and the vacuum is released through the corresponding first vacuum pipeline. The bonding wave spreads from the first distance sensor to the second distance sensor in all directions, and the second distance sensor in each direction is taken as the current distance sensor first.

[0059] Step 2: During the spreading of the bonding wave, all real-time differences between the current distance sensor in each direction and the outermost distance sensor are respectively combined into an array, wherein each array corresponds to a direction. The real-time difference of the distance sensor is the difference between the real-time value of the sensor and the initial value of the sensor, representing the deformation amount of the wafer of the adsorption point monitored by the sensor.

[0060] Step 3: Taking a set direction as the reference direction, the correlation coefficient of all other directions with the reference direction is calculated respectively.

[0061] The correlation coefficient of each to-be-calculated direction with the reference direction is calculated according to the following formula:

[0062]

[0063] wherein, represents the reference direction array, represents the first number value in the reference direction array, and the value is 1 to the number of values in the array, represents the average value of all values in the reference direction array, represents the to-be-calculated direction array, represents the first number value in the to-be-calculated direction array, and the value is 1 to the number of values in the array, represents the average value of all values in the to-be-calculated direction array, and ∑ represents the summation operation. Step 4: According to the correlation coefficient and the vacuum adsorption value of each distance sensor around the reference direction, the vacuum adsorption value of the current distance sensor corresponding to the adsorption point in all other directions is calculated.

[0064] The calculation method of the vacuum adsorption value of the current distance sensor corresponding to the adsorption point in each direction is as follows:

[0065]

[0066]

[0067] wherein, is the vacuum adsorption value of the current distance sensor corresponding to the adsorption point in the reference direction, is the vacuum adsorption value of the current distance sensor corresponding to the adsorption point in the to-be-calculated direction, ​​​​a real-time difference value of the current ranging sensor in the direction to be calculated, a real-time difference value of the current ranging sensor in the direction to be calculated, a real-time difference value of the current ranging sensor in the direction to be calculated.

[0068] Step 5: According to the vacuum suction values in all other directions, the vacuum in the corresponding suction points in other directions is adjusted in real time through the corresponding vacuum pipes, so that the bonding waves in all directions reach the position of the current ranging sensor at the same time at a uniform speed, and the vacuum at the current ranging sensor in all directions is released.

[0069] Step 6: The bonding wave spreads to the next ranging sensor, and the next ranging sensor is taken as the current ranging sensor to return to step 2 until the processing of the outermost ranging sensor is completed, indicating that the bonding wave has spread to the outermost side of the wafer.

[0070] Figure 5 The flow of an embodiment of the wafer bonding process method of the present application is shown. Referring to Figure 5 The process flow of the wafer bonding process method of the present embodiment is as follows, taking the above-mentioned example of 8-direction 32-hole sites.

[0071] Step 1: Confirm the initial vacuum suction values of the inner circle, the middle circle (including the first middle circle and the second middle circle) and the outer circle of the upper wafer in 8 directions from 0° to 360°, ensure that the vacuum suction values of the suction points at the same position in each annular suction area before bonding are the same; record the initial values R0 of all high-precision ranging sensors before bonding; set the gap threshold G between the upper and lower wafers, which is related to the position of the bonding wave during bonding, and is generally a percentage of the gap value between the upper and lower wafers before bonding.

[0072] Specifically, the vacuum suction values at the same position in 8 directions remain the same, for example, the vacuum suction values of the inner circle in 8 directions are all set to -50kpa, the first middle circle is set to -60kpa, the second middle circle is set to -80kpa, and the outer circle is set to -80kpa. The specific values used here have no reference significance and only serve to illustrate by example; record the initial values R0 of all high-precision ranging sensors, and record the difference R2 obtained by subtracting the initial value R0 from the real-time value R1 during the bonding process. If the difference value R2 of the ranging sensor at a certain position in a certain direction during the bonding process is greater than or equal to the gap threshold G between the upper and lower wafers, it can be considered that the bonding wave has reached that position, and the determination formula is: R2≥G, wherein R2 is the difference value obtained by subtracting the initial value R0 from the real-time value R1 of the ranging sensor at a specified position in a certain direction; G is the gap threshold between the upper and lower wafers set before bonding.

[0073] Step 2: the bonding starts, the needle is pressed down, all inner rings are vacuum adsorbed in 8 directions, and the bonding wave spreads from the inner ring to the periphery of the wafer. The real-time differences of the three ranging sensors from the first middle ring to the outer ring in 8 directions form 8 arrays A0-A7 respectively. Take the array A0 in the 0° direction as the reference array, and calculate the correlation coefficients of the arrays in the other 7 directions with the array in the 0° direction According to the correlation coefficients , the adjustable vacuum adsorption value of the first middle ring is calculated.

[0074] Specifically, the array A0 in the 0° direction is composed of [R22, R23, R24], where R22 represents the real-time difference of the second ranging sensor in the 0° direction, R23 represents the real-time difference of the third ranging sensor in the 0° direction, and R24 represents the real-time difference of the fourth ranging sensor in the 0° direction. Similarly, the array A1 in the 45° direction, the array A2 in the 90° direction, the array A3 in the 135° direction, the array A4 in the 180° direction, the array A5 in the 225° direction, the array A6 in the 270° direction, and the array A7 in the 315° direction are composed of [R22, R23, R24]. The correlation coefficients of the arrays A1-A7 in the other 7 directions with the array A0 in the 0° direction are calculated respectively, and the 45°-0° correlation coefficient , the 90°-0° correlation coefficient , the 135°-0° correlation coefficient , the 180°-0° correlation coefficient , the 225°-0° correlation coefficient , the 270°-0° correlation coefficient , and the 315°-0° correlation coefficient are obtained.

[0075] The correlation coefficient formula is:

[0076]

[0077] In the above formula, is the correlation coefficient between the array Ay and the array Ax, is the i-th measurement value in the array Ax, is the i-th measurement value in the array Ay, is the average value of all measurement values in the array Ax, is the average value of all measurement values in the array Ay, and ∑ is the summation operator.

[0078] Further, according to the correlation coefficient calculated in any direction, the vacuum adjustment value of the first middle ring in this direction is calculated:​​

[0079]

[0080] In the above formula, P is the vacuum suction value of the adsorption point at the first middle circle in the direction to be calculated, C is the correlation coefficient of the array in the first middle circle in the direction to be calculated relative to the array at the first middle circle in the 0° direction, R1 is the real-time difference value of the distance sensor at the first middle circle in the direction to be calculated, and R0 is the real-time difference value of the distance sensor at the first middle circle in the 0° direction.

[0081] The vacuum suction value of the first middle circle in the 7 directions calculated above needs to be adjusted. The direction with slow bonding wave velocity reduces the vacuum suction in the corresponding direction of the first middle circle, and the direction with fast bonding wave velocity increases the vacuum suction in the corresponding direction of the first middle circle. By adjusting the vacuum suction value of the first middle circle in 7 directions in real time, the diffusion speed of the bonding wave reaching the first middle circle in 8 directions is effectively controlled, and to some extent, it is ensured that the bonding wave in 8 directions can reach the position of the first middle circle in each direction at the same time.

[0082] Step 3: After the bonding wave reaches the position of the first middle circle in all 8 directions, release the vacuum suction of all the first middle circles in 8 directions. The difference values of the two distance sensors from the second middle circle to the outer circle in 8 directions form 8 arrays. Take the array in the 0° direction as the reference, calculate the correlation coefficients of the arrays in the other 7 directions relative to the 0° direction. According to the correlation coefficients, calculate the vacuum suction value of the second middle circle in the other 7 directions that needs to be adjusted.

[0083] The calculation formula of the correlation coefficient and the vacuum suction value is referred to step 2 and will not be repeated here.

[0084] Step 4: After the bonding wave reaches the position of all the second middle circles in 8 directions, release the vacuum suction of all the second middle circles in 8 directions. The difference values of the distance sensors of the outer circle in 8 directions form 8 arrays. Take the array in the 0° direction as the reference, calculate the correlation coefficients of the arrays in the other 7 directions relative to the 0° direction. According to the correlation coefficients, calculate the vacuum suction value of the second middle circle in the other 7 directions that needs to be adjusted.

[0085] The calculation formula of the correlation coefficient and the vacuum suction value is referred to step 2 and will not be repeated here.

[0086] Step 5: After the vacuum adjustment of the outer circle in each direction, when the distance sensor difference value R of the outer circle position is greater than or equal to the gap threshold G, it indicates that the bonding wave has reached the position, and the vacuum suction of the outer circle is released. The complete bonding wave has diffused from the center of the wafer to the edge of the wafer.

[0087] The application also discloses a control device for bonded waves, comprising a memory and a processor connected to the memory and configured to implement the control method for bonded waves according to the foregoing embodiments.

[0088] The application also discloses a computer readable storage medium, which stores computer instructions, and the computer instructions are executed by a processor to implement the control method for bonded waves according to the foregoing embodiments.

[0089] Although the above-described methods are illustrated and described as a series of acts for the sake of simplicity, it should be understood and appreciated that the methods are not limited by the order of the acts, as some acts can, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that shown and described herein or described herein but not shown. As examples of changes, two sequentially depicted acts can be executed concurrently, and / or an act can occur before, after, or as part of an act described herein but not necessarily shown. Further, the acts described herein can be implemented across a plurality of devices.

[0090] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for controlling a bonded wave, characterized by, The method comprises: Step 1: The first ranging sensor adjacent to the center of the wafer in all directions of the chuck is taken as a starting point, the vacuum at the first ranging sensor is released first, and the bonding wave spreads from the first ranging sensor in all directions to the second ranging sensor; Step 2: During the spreading of the bonding wave, all real-time differences from the current ranging sensor to the outermost ranging sensor in each direction are respectively combined into an array; Step 3: A set direction is taken as a reference direction, and the correlation coefficients of all other directions with the reference direction are respectively calculated; Step 4: According to the correlation coefficients and the vacuum suction values of the ranging sensors around the reference direction, the vacuum suction values of the corresponding suction points of the current ranging sensors in all other directions are calculated; Step 5: According to the calculated vacuum suction values in all other directions, the vacuum of the corresponding suction points in other directions is adjusted, and when the bonding wave reaches the position of the current ranging sensor, the vacuum at the current ranging sensor in all directions is released; Step 6: The bonding wave spreads to the next ranging sensor, and the next ranging sensor is taken as the current ranging sensor to return to step 2 until the outermost ranging sensor is processed.

2. The bonded-wave control method according to claim 1, wherein, The current ranging sensors in each direction form a ring, and all the ranging sensors form multiple rings, wherein the centers of all the rings coincide with the center of the wafer.

3. The bonded-wave control method according to claim 2, wherein The rings are respectively an inner ring, at least one middle ring and an outer ring from inside to outside.

4. The bonded-wave control method according to claim 1, wherein, In the all directions, each adjacent direction is separated by the same angle.

5. The bonded-wave control method according to claim 4, wherein The reference direction is the 0° direction.

6. The bonded-wave method of claim 1, wherein, The real-time difference of the ranging sensor is the difference between the real-time value of the sensor and the initial value of the sensor, which represents the deformation amount of the wafer of the suction point monitored by the sensor.

7. The bonded-wave method of claim 1, wherein, In step 3, the correlation coefficient of each direction to be calculated in all other directions with the reference direction is calculated The formula for calculating the correlation coefficient is: wherein, represents an array of reference directions, represents the i-th value in the array of reference directions, represents the number of values in the array of reference directions, represents the average of all values in the array of reference directions, represents an array of directions to be computed, represents the i-th value in the array of directions to be computed, represents the number of values in the array of directions to be computed, represents the average of all values in the array of directions to be computed, ∑ represents the summation operation.

8. The bonded-wave method of claim 7, wherein, In step 4, the current ranging sensor in each of the other directions corresponds to the vacuum suction value of the adsorption point The calculation method is as follows: wherein, is a vacuum suction value of a current ranging sensor corresponding to an adsorption point in a reference direction, is a vacuum suction value of a current ranging sensor corresponding to an adsorption point in a direction to be calculated, is a correlation coefficient of the direction to be calculated and the reference direction, is a real-time difference value of a current ranging sensor in the direction to be calculated, is a real-time difference value of a current ranging sensor in the reference direction.

9. A device for controlling and measuring a bonded wave, characterized by It comprises: a memory; and a processor connected to the memory and configured to implement the measurement and control method of the bonding wave as claimed in any one of claims 1 to 8.

10. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions are executed by the processor to implement the measurement and control method of the bonding wave as claimed in any one of claims 1 to 8.

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