Solar cells and photovoltaic modules
By controlling the resistivity change along the solar cell cutting path, a stress buffer structure and a smooth resistivity transition are formed, solving the problem of high fragmentation rate during the cutting process and improving battery performance and production efficiency.
CN121442833BActive Publication Date: 2026-07-03LONGI GREEN ENERGY TECHNOLOGY CO LTD XIXIAN NEW DISTRICT BRANCH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- LONGI GREEN ENERGY TECHNOLOGY CO LTD XIXIAN NEW DISTRICT BRANCH
- Filing Date
- 2025-09-09
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
The high fragmentation rate during the cutting process of existing solar cells leads to a decrease in production efficiency and cell performance.
Method used
By controlling the resistivity variation along the dicing path of the semiconductor substrate, especially the resistivity difference and rate of change between the first and second edges, a significant stress buffer structure and a smooth resistivity transition are formed, reducing stress concentration at the dicing surface and abrupt changes in the potential barrier during carrier transport.
Benefits of technology
It effectively reduces the breakage rate of solar cells, improves the fill factor and cell performance, while maintaining optimized production efficiency and process costs.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN121442833B_ABST
Abstract
The application provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell comprises a semiconductor substrate, a first doped layer and a second doped layer with different doping types arranged on the semiconductor substrate, and a surface passivation layer located on the side of the first doped layer and the second doped layer away from the semiconductor substrate. The semiconductor substrate comprises two opposite long side edges, namely a first edge and a second edge. The first edge and the second edge each comprise a center position and an edge position. The resistivity of the center position of the first edge is R1, the resistivity of the edge position of the first edge is R2, and the resistivity difference is Δ1=R2-R1. The resistivity of the center position of the second edge is R3, the resistivity of the edge position of the second edge is R4, and the resistivity difference is Δ2=R4-R3. Δ1>Δ2. The application takes into account the fragment rate and the fill factor, and improves the performance of the solar cell.
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