LED display device and manufacturing method of LED display device

Abstract

The invention discloses an LED display device and a manufacturing method of the LED display device. The LED display device comprises a driving substrate, a first light-emitting assembly and a second light-emitting assembly. The driving substrate comprises a plurality of first pixel power supply electrodes and second pixel power supply electrodes; the first light-emitting component comprises a first light-emitting layer group, a first pixel defining electrode and a second pixel defining electrode, and the first pixel defining electrode is matched with the first light-emitting layer group and the second pixel defining electrode to form a first pixel; the second light-emitting component comprises a second light-emitting layer group, a third pixel defining electrode and a fourth pixel defining electrode, the third pixel defining electrode is matched with the second light-emitting layer group and the fourth pixel defining electrode to form a second pixel, and the second pixel and the first pixel are staggered in the stacking direction of the first light-emitting component and the second light-emitting component. Through the arrangement, the preparation difficulty of the LED chip can be reduced, and the finished product yield of the LED chip is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to display technology, in particular to an LED display device and a manufacturing method of the LED display device. BACKGROUND

[0002] LED (Light Emitting Diode) is a kind of solid-state semiconductor device capable of converting electrical energy into visible light, which can directly convert electricity into light. When the current is applied to the LED semiconductor wafer through the wire, the electrons and holes in the LED semiconductor wafer will recombine and emit energy in the form of photons, thereby realizing light emission.

[0003] An LED chip usually has multiple pixel points, and a high-density pixel point integrated LED array can realize accurate control of the display effect of the LED chip. At present, the method for setting multiple pixel points is usually etching, and the etching process of the LED chip is not only difficult to prepare, but also easy to damage the LED chip, thereby resulting in a low yield of the finished product of the LED chip. In order to realize colorization, multiple colors of LED are stacked and repeatedly etched on the basis of etching to form pixels, which further increases the difficulty and complexity of the process, and it is difficult to realize mass production of high-yield and low-cost colorized LED display chips. SUMMARY

[0004] Embodiments of the present application provide an LED display device and a manufacturing method of the LED display device, which can reduce the preparation difficulty of the LED chip and improve the yield of the finished product of the LED chip.

[0005] To solve the above technical problems, one technical solution adopted by the present application is to provide an LED display device, which comprises a driving substrate, a first light emitting assembly and a second light emitting assembly.

[0006] The driving substrate comprises a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes.

[0007] The first light emitting assembly comprises a first light emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode and a plurality of first pixel transfer electrodes, the first pixel defining electrodes and the second pixel defining electrode are located on both sides of the first light emitting layer group, the first pixel defining electrode is located on the side of the first light emitting layer group facing the driving substrate, and the first pixel defining electrode and the second pixel defining electrode cooperate with the first light emitting layer group to form a first pixel, wherein the first pixel defining electrode is conductively connected with the corresponding first pixel power supply electrode, and the first pixel transfer electrode penetrates the first light emitting layer group.

[0008] The second light-emitting component is arranged in a stacked manner on a side of the first light-emitting component away from the driving substrate, and comprises a second light-emitting layer group and a plurality of third pixel defining electrodes and at least one fourth pixel defining electrode located on two sides of the second light-emitting layer group, the third pixel defining electrodes are located on a side of the second light-emitting layer group facing the first light-emitting component, and form second pixels in cooperation with the second light-emitting layer group and the fourth pixel defining electrodes respectively, projections of the second pixels in a stacking direction of the first light-emitting component and the second light-emitting component are staggered with the first pixels, and the third pixel defining electrodes are conductively connected with corresponding second pixel supply electrodes through corresponding first pixel transfer electrodes.

[0009] To solve the above technical problems, another technical solution adopted by the present application is to provide a manufacturing method of an LED display device, which comprises:

[0010] Providing a driving substrate, wherein the driving substrate comprises a plurality of first pixel supply electrodes and a plurality of second pixel supply electrodes;

[0011] Arranging a first light-emitting component in a stacked manner on the driving substrate, wherein the first light-emitting component comprises a first light-emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode, and a first pixel transfer electrode, the first pixel defining electrodes and the second pixel defining electrode are located on two sides of the first light-emitting layer group, the first pixel defining electrodes are located on a side of the first light-emitting layer group facing the driving substrate, and form first pixels in cooperation with the first light-emitting layer group and the second pixel defining electrodes respectively, wherein the first pixel defining electrodes are conductively connected with corresponding first pixel supply electrodes, and the first pixel transfer electrode penetrates the first light-emitting layer group;

[0012] Arranging a second light-emitting component in a stacked manner on a side of the first light-emitting component away from the driving substrate, wherein the second light-emitting component comprises a second light-emitting layer group and a plurality of third pixel defining electrodes and at least one fourth pixel defining electrode located on two sides of the second light-emitting layer group, the third pixel defining electrodes are located on a side of the second light-emitting layer group facing the first light-emitting component, and form second pixels in cooperation with the second light-emitting layer group and the fourth pixel defining electrodes respectively, projections of the second pixels in a stacking direction of the first light-emitting component and the second light-emitting component are staggered with the first pixels, and the third pixel defining electrodes are conductively connected with corresponding second pixel supply electrodes through the first pixel transfer electrode.

[0013] The beneficial effects of the present application are: different from the prior art, the present application stacks the first and second light-emitting components in multiple layers on the driving substrate, so as to arrange the first and second pixels in different planes, thereby reducing the manufacturing difficulty brought by the high-density pixel array in the same plane, so that the display pixel density of the LED display device can be ensured while the manufacturing difficulty of the LED display device is reduced, and the damage of the LED display device caused by excessive etching in the same plane component can be reduced, thereby improving the yield of the LED chip. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a structural schematic diagram of an embodiment of the LED display device of the present application;

[0015] Figure 2 is a partial region O of the LED display device shown in Figure 1 is an enlarged schematic diagram of the partial region O of the LED display device shown in

[0016] Figure 3 is a partial region P of the LED display device shown in Figure 1 is an enlarged schematic diagram of the partial region P of the LED display device shown in

[0017] Figure 4 is a partial component structural schematic diagram of an embodiment of the LED display device of the present application;

[0018] Figure 5 is a structural schematic diagram of another embodiment of the LED display device of the present application;

[0019] Figure 6 is a partial region Q of the LED display device shown in Figure 4 is an enlarged schematic diagram of the partial region Q of the LED display device shown in

[0020] Figure 7 is a manufacturing process schematic diagram of the manufacturing method of an embodiment of the LED display device of the present application;

[0021] Figure 8 is another manufacturing process schematic diagram of the manufacturing method of an embodiment of the LED display device of the present application;

[0022] Figure 9 is still another manufacturing process schematic diagram of the manufacturing method of an embodiment of the LED display device of the present application;

[0023] Figure 10 is a manufacturing process schematic diagram of the LED display device shown in Figure 1

[0024] is still another manufacturing process schematic diagram of the LED display device shown in Figure 11 Figure 1 ​​

[0025] Figure 12 is Figure 1 Another preparation process schematic diagram of the LED display device shown in FIG. 7;

[0026] Figure 13 is Figure 1 Still another preparation process schematic diagram of the LED display device shown in FIG. 8;

[0027] Figure 14 is Figure 1 Still another preparation process schematic diagram of the LED display device shown in FIG. 9;

[0028] Figure 15 is a structure schematic diagram of still another embodiment of the LED display device of the present application;

[0029] Figure 16 is Figure 4 A preparation process schematic diagram of the LED display device shown in FIG. 10;

[0030] Figure 17 is Figure 4 Still another preparation process schematic diagram of the LED display device shown in FIG. 11;

[0031] Figure 18 is Figure 4 Another preparation process schematic diagram of the LED display device shown in FIG. 12;

[0032] Figure 19 is Figure 4 Still another preparation process schematic diagram of the LED display device shown in FIG. 13. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without any creative work, shall fall within the scope of protection of the present application.

[0034] The present application discloses an LED display device and a manufacturing method thereof.

[0035] The following embodiments of the LED display device of the present application describe exemplary structures of the LED display device.

[0036] The LED display device 1 is a device capable of forming a plurality of display pixels inside to generate light, and the generated light can be emitted from one side of the LED display device 1 to illuminate or display various information such as text, images, videos, etc. For example, the LED display device 1 can be an LED digital vehicle lamp chip, a digital lamp strip chip, an LED display screen chip, etc.

[0037] As shown in Figure 1 , the LED display device 1 can include a driving substrate 100, a first light emitting assembly 200, and a second light emitting assembly 300.

[0038] The driving substrate 100 is electrically connected to the first light emitting assembly 200 and the second light emitting assembly 300. The driving substrate 100 is configured to provide driving current to the first light emitting assembly 200 and the second light emitting assembly 300, and the first light emitting assembly 200 and the second light emitting assembly 300 are configured to receive the driving current from the driving substrate 100 and realize display and light emitting functions. Optionally, the driving substrate 100, the first light emitting assembly 200, and the second light emitting assembly 300 can be sequentially stacked. The stacking direction can be as shown by the arrow in Figure 1 .

[0039] In some embodiments, the first light emitting assembly 200 can be fixed to the driving substrate 100 in a metal bonding manner or a hybrid bonding manner, and the second light emitting assembly 300 can also be fixed to the side of the first light emitting assembly 200 away from the driving substrate 100 in a metal bonding manner or a hybrid bonding manner.

[0040] Optionally, the parts of the first light emitting component 200 and the second light emitting component 300 in contact with the driving substrate 100 can be made of metal, so that the metal atoms of the first light emitting component 200, the metal atoms of the second light emitting component 300 and the metal atoms of the driving substrate 100 are combined with each other, thereby realizing the metal bonding between the metals, which can facilitate the good electrical conductivity and thermal conductivity between the first light emitting component 200, the second light emitting component 300 and the driving substrate 100.

[0041] The hybrid bonding is a bonding mode in which the dielectric layer and the dielectric layer are bonded in some areas, the metal and the metal are bonded in some areas, and the two materials are hybrid bonded, thereby forming the interconnection permanent bonding. Such hybrid bonding can not only realize the face-to-face bonding of the wafer, but also increase the strength, density and reliability of the bonding. The hybrid bonding can facilitate the face-to-face connection and bonding of the first light emitting component 200 and the second light emitting component 300 to the driving substrate 100.

[0042] Of course, in other embodiments, other bonding modes can be used to bond the first light emitting component 200, the second light emitting component 300 and the driving substrate 100, which are not limited in the present embodiment.

[0043] Further, the driving substrate 100 can include a plurality of first pixel power electrodes 110 and a plurality of second pixel power electrodes 120. The plurality of first pixel power electrodes 110 can correspond to and be connected to the first light emitting component 200 to deliver driving current to the first light emitting component 200. The plurality of second pixel power electrodes 120 can correspond to and be connected to the second light emitting component 300 to deliver driving current to the second light emitting component 300.

[0044] Optionally, the driving substrate 100 can include a plurality of switching devices (not shown in the figure) arranged in an array, which correspond to and are conductively connected to the plurality of first pixel power electrodes 110 and the plurality of second pixel power electrodes 120. By conductively connecting the switching devices to the first pixel power electrodes 110 and the second pixel power electrodes 120, the individual control of the display pixels in the LED display device 1 can be further realized.

[0045] Further, the first light emitting component 200 can include a first light emitting layer group 210, a plurality of first pixel defining electrodes 220, at least one second pixel defining electrode 230 and a plurality of first pixel transfer electrodes 240.

[0046] The first pixel defining electrode 220 and the second pixel defining electrode 230 can be located on both sides of the first light emitting layer group 210, the first pixel defining electrode 220 is located on the side of the first light emitting layer group 210 facing the driving substrate 100, and the first pixel defining electrode 220 and the second pixel defining electrode 230 cooperate to form a first pixel. The first pixel defining electrode 220 can be conductively connected to the corresponding first pixel power supply electrode 110, and the first pixel transfer electrode 240 can penetrate the first light emitting layer group 210.

[0047] Specifically, the first light emitting layer group 210 can be an epitaxial layer capable of recombining electrons and holes to emit light under the support of a driving current. The first light emitting layer group 210 can include a P-type semiconductor and an N-type semiconductor, and the first pixel defining electrode 220 and the second pixel defining electrode 230 can be P and N electrodes of the first pixel, respectively. The first pixel defining electrode 220 and the second pixel defining electrode 230 can form an ohmic contact with the first light emitting layer group 210 on both sides of the first light emitting layer group 210 to provide a current to the P-type semiconductor and the N-type semiconductor of the first light emitting layer group 210, so that the first light emitting layer group 210 can display a plurality of first pixels under the cooperation of the first pixel defining electrode 220, the second pixel defining electrode 230 and the first light emitting layer group 210.

[0048] The plurality of first pixel defining electrodes 220 can be arranged in an array on the side of the first light emitting layer group 210 facing the driving substrate 100 according to the required position of the first pixel, and the positions of the plurality of first pixel power supply electrodes 110 correspond one-to-one to the positions of the plurality of first pixel defining electrodes 220, so that the first light emitting layer group 210 can receive the driving current transmitted by the first pixel defining electrode 220 at the positions corresponding to the plurality of first pixel defining electrodes 220, thereby enabling the first light emitting layer group 210 to display a plurality of first pixels at specific positions.

[0049] The plurality of first pixel transfer electrodes 240 penetrate the first light emitting assembly 200 in the stacking direction of the first light emitting assembly 200 and the second light emitting assembly 300, and are exposed at both ends of the first light emitting assembly 200. One end of the first pixel transfer electrode 240 is in contact with the driving substrate 100, and the other end is in contact with the second light emitting assembly 300. The plurality of first pixel transfer electrodes 240 are used to transmit the driving current of the driving substrate 100 to the second light emitting assembly 300.

[0050] The second light emitting assembly 300 can be stacked on the side of the first light emitting assembly 200 away from the driving substrate 100, and can include a second light emitting layer group 310 and a plurality of third pixel defining electrodes 320 and at least one fourth pixel defining electrode 330 located on both sides of the second light emitting layer group 310.

[0051] The third pixel defining electrode 320 can be located on the side of the second light emitting layer group 310 facing the first light emitting component 200, and cooperates with the second light emitting layer group 310 and the fourth pixel defining electrode 330 to form a second pixel. The projection of the second pixel in the stacking direction of the first light emitting component 200 and the second light emitting component 300 is staggered with the first pixel, and the third pixel defining electrode 320 is conductively connected with the corresponding second pixel supply electrode 120 via the corresponding first pixel transfer electrode 240.

[0052] Similarly, the second light emitting layer group 310 can be an epitaxial layer capable of realizing light emission by supporting the recombination of electrons and holes under the driving current. The second light emitting layer group 310 can also include a P-type semiconductor and an N-type semiconductor, and the third pixel defining electrode 320 and the fourth pixel defining electrode 330 can be the P electrode and the N electrode of the second pixel, respectively, and can form an ohmic contact with the second light emitting layer group 310 on both sides of the second light emitting layer group 310, so that the second light emitting layer group 310 can display a plurality of second pixels under the cooperation of the third pixel defining electrode 320, the fourth pixel defining electrode 330 and the second light emitting layer group 310.

[0053] Alternatively, a plurality of third pixel defining electrodes 320 can be arranged in an array on the side of the second light emitting layer group 310 facing the driving substrate 100 according to the required position of the second pixel, and the positions of the plurality of second pixel supply electrodes 120 correspond one-to-one to the positions of the plurality of second pixel defining electrodes 230, so that the second light emitting layer group 310 can receive the driving current transmitted by the second pixel defining electrode 230 through the first pixel transfer electrode 240 at the position corresponding to the plurality of second pixel defining electrodes 230, so that the second light emitting layer group 310 can display a plurality of second pixels at a specific position.

[0054] Alternatively, the first pixel defining electrode 220 and the third pixel defining electrode 320 can be formed of conductive materials such as ITO metal, Ag metal or Ni metal, and the first pixel supply electrode 110, the second pixel supply electrode 120 and the first pixel transfer electrode 240 can be formed of conductive materials such as Cu, Au and Al. Therefore, alternatively, the first pixel defining electrode 220 can form a metal bonding structure of Ni / Al / Pt / Au, ITO / Ag / Ti / Pt / Au, etc. with the first pixel supply electrode 110, and the first pixel transfer electrode 240 can form a metal bonding structure of Ni / Al / Pt / Au, ITO / Ag / Ti / Pt / Au, etc. at both ends thereof with the second pixel supply electrode 120 and the third pixel defining electrode 320, respectively.

[0055] In some embodiments, the first light-emitting layer group 210 can be provided with an insulating region (not shown in the figure) formed by ion bombardment at the periphery of the first pixel transfer electrode 240. In this way, the current in the first pixel transfer electrode 240 can not leak to the first light-emitting layer group 210 to affect the first pixel, thereby reducing the electrical cross-talk between display pixels, so that the driving substrate 100 can accurately control the third pixel defining electrode 320 through the first pixel transfer electrode 240 to control the display effect of the second pixel.

[0056] Alternatively, as shown in FIG. 2B, the first light-emitting layer group 210 can include a first semiconductor layer 211, a first active layer 212, and a second semiconductor layer 213 which are sequentially stacked, and the first semiconductor layer 211 is located on the side of the first active layer 212 facing the driving substrate 100. Figures 1-2 The first semiconductor layer 211 can be electrically connected to the first pixel defining electrode 220 as a P-type semiconductor of the first light-emitting layer group 210, the second semiconductor layer 213 can be electrically connected to the second pixel defining electrode 230 as an N-type semiconductor of the first light-emitting layer group 210, and the first active layer 212 is a multi-layer quantum well light-emitting layer, and the combination of electrons and holes of the first semiconductor layer 211 can emit light in the first active layer 212. The first semiconductor layer 211 and the second semiconductor layer 213 of the second semiconductor layer 213 can be doped with semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, AlGaInP, etc.

[0057] Specifically, the thickness and resistivity of the first semiconductor layer 211 are set such that, when the LED display device 1 is normally working, the lateral current diffusion length of the first semiconductor layer 211 satisfies where Ls is the lateral current diffusion length of the first semiconductor layer 211, and D1 is the shortest distance between the edge of the part of the first pixel transfer electrode 240 located in the first light-emitting layer group 210 and the edge of the adjacent first pixel defining electrode 220.

[0058] where the lateral current diffusion length Ls of the first semiconductor layer 211 is calculated by the following formula:

[0059]

[0060] Where k is Boltzmann constant, T is thermodynamic temperature, e is electron charge, t is thickness of first semiconductor layer 211, ρ is resistivity of first semiconductor layer 211, and J0 is current density within the first current diffusion layer covered by first pixel defining electrode 220 when LED display device 1 is operating normally. It can be seen that the lateral current diffusion length Ls decreases with decreasing thickness t of first semiconductor layer 211 and decreases with increasing resistivity ρ of first semiconductor layer 211. Therefore, the lateral current diffusion length Ls can be reduced to prevent the operating current of the display pixel corresponding to each first pixel defining electrode 220 from diffusing to the position of adjacent first pixel transition electrode 240, thereby achieving self-isolation between each first pixel and the first pixel transition electrode 240, and further reducing electrical crosstalk between the first pixel and the second pixel.

[0061] Or, such as Figures 1-3 As shown, a through hole 2411 can be provided on the first light-emitting layer group 210, and the first pixel transfer electrode 240 passes through the through hole 2411. An insulating layer 2412 can be provided on the hole wall of the through hole 2411. The insulating layer 2412 can be made of silicon dioxide, silicon nitride, aluminum oxide or other insulating materials. The insulating layer 2412 can directly separate the first pixel transfer electrode 240 from the first light-emitting layer group 210, and the preparation process is simple. It can reduce the cost of the LED display device 1 while reducing electrical crosstalk between the first pixel and the second pixel.

[0062] In some embodiments, in the vertical direction of the stacking direction, the distance from the edge of the portion of the first pixel transition electrode 240 located within the first light-emitting layer group 210 to the edge of the first pixel defining electrode 220 may be greater than or equal to one-quarter of the vertical dimension of the first pixel defining electrode 220.

[0063] And / or, in the vertical direction of the stacking direction, the distance from the edge of the portion of the first pixel transition electrode 240 located within the first light-emitting layer group 210 to the edge of the second pixel defining electrode 230 is greater than or equal to one-quarter of the dimension of the second pixel defining electrode 230 in the vertical direction.

[0064] For example, such as Figure 1 As shown, the stacking direction of the first light-emitting component 200 and the second light-emitting component 300 is as follows: Figure 1 As shown by the middle arrow A, the vertical direction of the stacking direction is as follows: Figure 1 As shown by arrow B, the distance from the edge of the portion of the first pixel transition electrode 240 located within the first light-emitting layer group 210 to the edge of the second pixel defining electrode 230 can be represented by distance D in the figure. The vertical dimension of the second pixel defining electrode 230 can be represented by distance E in the figure, where D is greater than or equal to E / 4.

[0065] With the above settings, the first pixel transfer electrode 240 is less likely to leak current to the position of the first pixel, thereby further reducing electrical crosstalk between the first pixel and the second pixel, improving the reliability and yield of the LED display device 1, and reducing the probability of leakage.

[0066] In some implementations, such as Figure 1 As shown, the first light-emitting component 200 may further include a first interlayer insulating layer 250, a second interlayer insulating layer 260, and a first pixel lead-out electrode 270. The first interlayer insulating layer 250 may cover the side of the first light-emitting layer group 210 facing the driving substrate 100 and the first pixel defining electrode 220. One end of the first pixel lead-out electrode 270 is conductively connected to the first pixel defining electrode 220, and the other end of the first pixel lead-out electrode 270 is exposed from the side of the first interlayer insulating layer 250 facing the driving substrate 100. The first pixel lead-out electrode 270 is bonded to the first pixel power supply electrode 110. The second interlayer insulating layer 260 may cover the side of the first light-emitting layer group 210 away from the driving substrate 100 and the second pixel defining electrode 230. The first pixel transition electrode 240 further penetrates the first interlayer insulating layer 250 and the second interlayer insulating layer 260.

[0067] The first pixel lead-out electrode 270 can be made of conductive materials such as Cu, Au, and Al, and can form copper, indium, gold, or tin metal bonding with the first pixel power supply electrode 110. Of course, in other embodiments, hybrid bonding of insulating materials and metal materials can also be achieved by means such as SiO2 / Cu, PI / Cu, or BCB / Cu, and this application does not make specific limitations here.

[0068] Specifically, the first pixel lead-out electrode 270 can be embedded in the first interlayer insulating layer 250. The side of the first pixel lead-out electrode 270 facing the driving substrate 100 can be flush with the side of the first interlayer insulating layer 250 facing the driving substrate 100, so that after the dielectric layer is bonded, it can be bonded to the first pixel lead-out electrode 270 and the first pixel power supply electrode 110 after high-temperature annealing and diffusion.

[0069] The first interlayer insulating layer 250 is provided to cover the side of the first light-emitting layer group 210 facing the driving substrate 100 and the first pixel defining electrode 220, which can further fix the first pixel defining electrode 220, the first pixel lead-out electrode 270 and the first pixel transfer electrode 240, so as to further stabilize the position of the first pixel and the second pixel, thereby making the structure of the LED display device 1 more compact.

[0070] The first interlayer insulating layer 250 and the second interlayer insulating layer 260 can be made of silicon dioxide, BCB, PI, or other insulating materials. This arrangement can reduce the leakage and the crosstalk between the display pixels, and the first interlayer insulating layer 250 can also serve as a mask film and a protective layer to prevent impurities from diffusing into the LED display device 1 and affecting the operation of the LED display device 1.

[0071] Specifically, the second interlayer insulating layer 260 is made of transparent insulating material. When the first light-emitting layer group is powered to emit light, the light emitted from the first light-emitting layer group passes through the second interlayer insulating layer 260 and is emitted outward. Therefore, the second interlayer insulating layer 260 is made of transparent insulating layer to reduce the loss of light, thereby increasing the light-emitting efficiency of the LED display device 1.

[0072] Similarly, in some embodiments, the second light-emitting assembly 300 can further include a third interlayer insulating layer 340 covering the second light-emitting layer group 310 and the third pixel defining electrode 320 on the side of the second light-emitting layer group 310 facing the first light-emitting layer group 210, and a second pixel lead electrode 350 having one end electrically connected to the third pixel defining electrode 320 and the other end exposed from the third interlayer insulating layer 340 on the side of the third interlayer insulating layer 340 facing the first light-emitting layer group 210, and the second pixel lead electrode 350 is bonded to the first pixel transfer electrode 240.

[0073] Specifically, the second pixel lead electrode 350 is embedded in the third interlayer insulating layer 340, and the side of the second pixel lead electrode 350 facing the first light-emitting assembly 200 can be flush with the side of the third interlayer insulating layer 340 facing the first light-emitting assembly 200. The first pixel transfer electrode 240 is exposed on the side of the second interlayer insulating layer 260 facing the second light-emitting layer group 310, and can be flush with the side of the second interlayer insulating layer 260 facing the second light-emitting layer group 310, thereby facilitating the stacking of the first light-emitting assembly 200 and the second light-emitting assembly 300, and facilitating the bonding of the second pixel lead electrode 350 and the first pixel transfer electrode 240.

[0074] Similarly, the second pixel lead electrode 350 can be made of Cu, Au, Al, or other conductive materials, and the second pixel lead electrode 350 can be bonded to the first pixel transfer electrode 240 by copper, indium, gold, or tin. The third interlayer insulating layer 340 can also be made of silicon dioxide, PI, BCB, or other transparent and insulating materials, so that the light emitted by the first pixel and the second pixel can pass through the third interlayer insulating layer 340 and be emitted from the LED display device 1.

[0075] In some embodiments, as shown in FIG. 2, the first light-emitting assembly 200 can further include a first pixel defining electrode 220 and a first pixel transfer electrode 240. The first pixel defining electrode 220 is arranged on the side of the first light-emitting layer group 210 facing the second light-emitting layer group 310, and the first pixel transfer electrode 240 is arranged on the side of the first interlayer insulating layer 250 facing the second light-emitting layer group 310. Figure 1As shown, the first pixel supply electrode 110 can include a first pixel supply portion 111 and a second pixel supply portion 112 connected to each other, and the first pixel lead electrode 270 can include a first pixel lead portion 271 and a second pixel lead portion 272 connected to each other.

[0076] In the vertical direction of the stacking direction, the size of the first pixel supply portion 111 can be greater than the size of the second pixel supply portion 112, the size of the first pixel lead portion 271 can be greater than the size of the second pixel lead portion 272, the first pixel supply portion 111 and the first pixel lead portion 271 are bonded to each other, and the second pixel supply portion 112 is conductively connected to the first pixel defining electrode 220. The contact area of the portion where the first pixel supply electrode 110 and the first pixel lead electrode 270 are bonded to each other is increased, a double-layered Damascus structure can be formed, and the first pixel supply electrode 110 and the first pixel lead electrode 270 can be bonded to each other, thereby achieving a higher strength connection.

[0077] Similarly, in some embodiments, the second pixel lead electrode 350 can include a third pixel lead portion 351 and a fourth pixel lead portion 352 connected to each other, and the first pixel adapter electrode 240 includes a first pixel adapter portion 241 and a second pixel adapter portion 242 connected to each other. In the vertical direction of the stacking direction, the size of the first pixel adapter portion 241 is greater than the size of the second pixel adapter portion 242, the size of the third pixel lead portion 351 is greater than the size of the fourth pixel lead portion 352, the first pixel adapter portion 241 and the third pixel lead portion 351 are bonded to each other, and the fourth pixel lead portion 352 is conductively connected to the third pixel defining electrode 320.

[0078] Of course, in other embodiments, the first pixel supply electrode 110 and the first pixel supply electrode 110, the first second pixel lead electrode 350 and the first pixel adapter portion 241 can also be provided as a structure of the same size, i.e. a single-layered Damascus structure, which is not specifically limited in the present embodiment.

[0079] In some embodiments, the second pixel lead portion 272 and the first pixel defining electrode 220, the fourth pixel lead portion 352 and the third pixel defining electrode 320, and the second pixel adapter portion 242 and the second pixel supply electrode 120 can be conductively connected by deposition, respectively. In other words, the second pixel lead portion 272 can be formed in the first light emitting assembly 200 by deposition and conductively connected to the first pixel defining electrode 220. Similarly, the fourth pixel lead portion 352 is formed in the second light emitting assembly 300 by deposition and conductively connected to the third pixel defining electrode 320. And the second pixel adapter portion 242 is formed in the first light emitting assembly 200 by deposition and conductively connected to the second pixel supply electrode 120.

[0080] The second pixel lead-out portion 272, the fourth pixel lead-out portion 352, and the second pixel transfer portion 242 can be formed by deposition, which can reduce the difficulty of manufacturing the LED display device 1 and can enhance the conductive connection between the second pixel lead-out portion and the first pixel defining electrode 220, between the fourth pixel lead-out portion 352 and the third pixel defining electrode 320, and between the second pixel transfer portion 242 and the second pixel supply electrode 120.

[0081] In some embodiments, as shown in FIG. 2B, the number of the second pixel defining electrodes 230 can correspond to the number of the first pixel defining electrodes 220, and the first light-emitting assembly 200 can further include a first interconnection electrode 280 for electrically connecting the plurality of second pixel defining electrodes 230. Figures 1-4 Specifically, the plurality of second pixel defining electrodes 230 correspond to the plurality of first pixel defining electrodes 220 one by one, and the plurality of second pixel defining electrodes 230 and the first interconnection electrode 280 together form a common N electrode of the first light-emitting layer group 210. The first interconnection electrode 280 is a grid-shaped interconnection electrode that connects all the second pixel defining electrodes 230 and can cooperate with the first light-emitting layer group 210 to form the first pixel.

[0082] The first interconnection electrode 280 is configured to connect the plurality of second pixel defining electrodes 230, so that the reference voltage can be provided to all the second pixel defining electrodes 230 by providing the reference voltage to the first interconnection electrode 280, thereby achieving unified control of the plurality of second pixel defining electrodes 230 to control the display of the first pixel by the LED display device 1.

[0083] In addition, the number of the fourth pixel defining electrodes 330 can correspond to the number of the third pixel defining electrodes 320, and the second light-emitting assembly 300 can further include a second interconnection electrode 360 for electrically connecting the plurality of fourth pixel defining electrodes 330. Similarly, the second interconnection electrode 360 is configured to connect the plurality of fourth pixel defining electrodes 330 corresponding to the plurality of second pixel defining electrodes, so as to achieve unified control of the plurality of fourth pixel defining electrodes 330 to control the display of the second pixel by the LED display device 1.

[0084] Optionally, as shown in FIG. 2B, the first interconnection electrode 280 can be arranged in a grid shape and partially cover the second pixel defining electrodes 230 along the edges of the second pixel defining electrodes 230. Such an arrangement not only can save the manufacturing cost of the LED display device 1, but also can prevent the first interconnection electrode 280 from being in contact with the first pixel transfer electrode 240 to cause leakage, thereby ensuring the feasibility and yield of the LED display device 1. Figure 4

[0085] ​In some embodiments, the reflectivity of the second pixel defining electrode 230 may be less than that of the first pixel defining electrode 220, and the thickness of the first light-emitting layer may be controlled to form a first resonant cavity from the side of the second pixel defining electrode 230.

[0086] This configuration allows the light emitted by the first light-emitting layer group 210 to be reflected by the first pixel defining electrode 220 with higher reflectivity and emitted from the second pixel defining electrode 230 with lower reflectivity when the first light-emitting layer group 210 emits light under the action of the driving voltage and the reference voltage. This makes the light emitted from the first pixel more collimated, thereby improving the light emission efficiency of the LED display device 1.

[0087] And / or, similarly, the reflectivity of the fourth pixel defining electrode 330 can be less than that of the third pixel defining electrode 320, and the thickness of the second light-emitting layer can be controlled to form a second resonant cavity from the side of the fourth pixel defining electrode 330. The second interconnect electrode 360 ​​can be arranged in a grid pattern and partially cover the fourth pixel defining electrode 330 along the edge of the fourth pixel defining electrode 330.

[0088] In some implementations, for example, the first pixel defining electrode 220 and the third pixel defining electrode 320 can be made of highly reflective materials such as metallic silver or aluminum, and the second pixel defining electrode 230 and the fourth pixel defining electrode 330 can be made of materials such as Al, Ti, or Ni, or they can be made of a dielectric layer DBR (distributed Bragg mirror).

[0089] This configuration ensures the collimation of light output from each pixel of the LED display device 1 and reduces leakage current, thereby improving the light output efficiency and yield of the LED display device 1.

[0090] Optionally, such as Figure 1 As shown, a transparent electrode layer 221 can be disposed between the first pixel defining electrode 220 and the first light-emitting layer group 210. The transparent electrode layer 221 and the first light-emitting layer group 210 form an ohmic contact, and the first pixel defining electrode 220 and the transparent electrode layer 221 also form an ohmic contact, together serving as the P electrode of the first pixel. The transparent electrode layer 221 can be made of materials such as ITO electrodes. Other display pixels can also be configured in this way, so that the transparent electrode layer 221 acts as the main P electrode to transmit current to the first light-emitting layer group 210, facilitating the selection of a highly reflective material as the first pixel defining electrode 220.

[0091] In some embodiments, the output light wavelength of the first light emitting component 200 can be greater than the output light wavelength of the second light emitting component 300. For example, the first light emitting component 200 can emit green light, and the second light emitting component 300 can emit blue light, where the green light wavelength is greater than the output light wavelength of the blue light. By setting the output light wavelength of the first light emitting component 200 and the second light emitting component 300 to be inconsistent, the LED display device 1 can obtain display pixels capable of displaying different colors, thereby enriching the display effect of the LED display device 1.

[0092] In some embodiments, the LED display device 1 can add other display pixels in reference to the structure of the second pixel.

[0093] For example, in some embodiments, as shown in FIG. 1, the driving substrate 100 can further include a plurality of third pixel power supply electrodes 130, the first light emitting component 200 can further include a second pixel transfer electrode 290 penetrating the first light emitting layer group 210, and the second light emitting component 300 can further include a third pixel transfer electrode 370 penetrating the second light emitting layer group 310 and being in butt joint with the second pixel transfer electrode 290. Figure 1

[0094] The LED display device 1 can further include a third light emitting component 400. The third light emitting component 400 can be arranged in a stacked manner on the side of the second light emitting component 300 away from the first light emitting component 200, and include a third light emitting layer group 410, a plurality of fifth pixel defining electrodes 420 located on both sides of the third light emitting layer group 410, and at least one sixth pixel defining electrode 430.

[0095] The third pixel can be staggered with the first pixel and the second pixel in the projection in the stacking direction. The fifth pixel defining electrode 420 is conductively connected with the corresponding third pixel power supply electrode 130 via the second pixel transfer electrode 290 and the third pixel transfer electrode 370.

[0096] Optionally, the output light wavelength of the first light emitting component 200 can be greater than the output light wavelength of the second light emitting component 300, and the output light wavelength of the first light emitting component 200 can be less than the output light wavelength of the third light emitting component 400. For example, the output light of the first light emitting component 200 can be green light, the output light of the second light emitting component 300 can be blue light, and the output light of the third light emitting component 400 can be red light, where the wavelength of the red light is greater than the wavelength of the green light, and the wavelength of the green light is greater than the wavelength of the blue light. In this way, the display effect of the LED display device 1 can be further enriched.

[0097] ​Through the above arrangement, the display pixels of different output light wavelengths are arranged on different planes in a stacked manner, so as to reduce the difficulty in manufacturing caused by the high-density pixel array in the same plane, thereby reducing the manufacturing difficulty of the LED display device 1 of multiple colors while ensuring the display pixel density of the LED display device 1. Moreover, this can also reduce the damage of the LED display device 1 caused by excessive etching in the same plane assembly, thereby improving the yield of the LED chip.

[0098] Optionally, in the stacking direction of the third light-emitting assembly 400 and the second light-emitting assembly 300, the sixth pixel defining electrode 430, the fifth pixel defining electrode 420, the third pixel transfer electrode 370, the second pixel transfer electrode 290, and the third pixel power supply electrode 130 are projected and overlapped and stacked in sequence and are conductively connected to each other, so that the fifth pixel defining electrode 420 can receive the driving current provided by the third pixel power supply electrode 130 to drive the third pixel to emit light.

[0099] Similarly, the specific structure of the third light-emitting assembly 400 layer can refer to the structure of the second light-emitting assembly 300, which will not be described here in this embodiment.

[0100] In some embodiments, an insulating layer can be added on the side of the second light-emitting assembly 300 away from the first light-emitting assembly 200 to cover the second interconnection electrode 360 and the fourth pixel electrode 330. Then, a hole can be formed at the position corresponding to the third pixel power supply electrode by deep etching, and the second pixel transfer electrode 290 and the third pixel transfer electrode 370 can be added by deposition or electroplating. The third light-emitting assembly 400 can also be fixed to the side of the second light-emitting assembly 300 away from the first light-emitting assembly 200 by metal bonding or hybrid bonding, so that the second pixel transfer electrode 290 and the third pixel transfer electrode 370 are conductively connected to fix the third light-emitting assembly 400 to the second light-emitting assembly 300.

[0101] In other embodiments, the common N electrode of the display pixels of the LED display device 1 can be arranged at other positions.

[0102] For example, as shown in FIG. 1, the common N electrode of the display pixels of the LED display device 1 can be arranged on the driving substrate 100. Figure 5 In addition, as shown in FIG. 2, the common N electrode of the display pixels of the LED display device 1 can be arranged on the first light-emitting assembly 200. Figure 6 As shown in FIG. 3, the common N electrode of the display pixels of the LED display device 1 can be arranged on the second light-emitting assembly 300.

[0103] Optionally, the first light-emitting layer group 210 can include a first semiconductor layer 211, a first active layer 212 and a second semiconductor layer 213 which are sequentially stacked, and the first semiconductor layer 211 is located at the side of the first active layer 212 facing the driving substrate 100. The specific description of the first semiconductor layer 211, the first active layer 212 and the second semiconductor layer 213 can be found in the above, and the present embodiment will not be described here again.

[0104] The second light-emitting layer group 310 can also include a third semiconductor layer 311, a second active layer 312 and a fourth semiconductor layer 313 which are sequentially stacked, and the third semiconductor layer 311 is located at the side of the second active layer 312 facing the first light-emitting component 200. The specific description of the third semiconductor layer 311, the second active layer 312 and the fourth semiconductor layer 313 can be referred to the first semiconductor layer 211, the first active layer 212 and the second semiconductor layer 213, and the present embodiment will not be described here again.

[0105] The first common lead electrode 201 can penetrate the first semiconductor layer 211 and the first active layer 212 and be conductively connected with the second semiconductor layer 213 and / or the second pixel defining electrode 230, and the first common lead electrode 201 and the first common lead electrode 202 penetrate the first light-emitting layer group 210, and the first common lead electrode 201 and the first common lead electrode 202 are respectively conductively connected with the common power supply electrode 140.

[0106] Specifically, the common power supply electrode 140 can provide a reference voltage to the second semiconductor layer 213 and / or the second pixel defining electrode 230 through the first common lead electrode 201, so that the first common lead electrode 201 can serve as a common N electrode of the first light-emitting layer group 210 and form an ohmic contact with the second semiconductor layer 213 as an N-type semiconductor, and further form a current path between the common power supply electrode 140, the first common lead electrode 201, the first light-emitting layer group 210, the first pixel defining electrode 220 and the first pixel power supply electrode 110, so that the LED display device 1 can realize the control of the first pixel by controlling the common power supply electrode 140 and the first pixel power supply electrode 110.

[0107] Similarly, the second common lead-out electrode 301 can penetrate the third semiconductor layer 311 and the second active layer 312, and be electrically connected to the fourth semiconductor layer 313 and / or the fourth pixel defining electrode 330. The second common lead-out electrode 301 can be electrically connected to the common power supply electrode 140 via the first common transition electrode 202. The second common lead-out electrode 301 can also form an ohmic contact with the fourth semiconductor layer 313 and / or the fourth pixel defining electrode 330, so that a current path can be formed between the common power supply electrode 140, the first common transition electrode 202, the second light-emitting layer group 310, the third pixel defining electrode 320, and the second pixel power supply electrode 120, allowing the LED display device 1 to control the second pixel by controlling the common power supply electrode 140 and the second pixel power supply electrode 120.

[0108] The first common electrode 201 may be insulated from the first semiconductor layer 211 and the first active layer 212, and the second common electrode 301 may be insulated from the third semiconductor layer 311 and the second active layer 312. For example, the gap between the first common electrode 201 and the first semiconductor layer 211 and the first active layer 212 may be filled with a first interlayer insulating layer 250, and the gap between the second common electrode 301 and the third semiconductor layer 311 and the second active layer 312 may be filled with a third interlayer insulating layer 340, thereby achieving insulation.

[0109] Furthermore, the first common transfer electrode 202 and the first light-emitting component 200 can also be insulated to reduce the occurrence of leakage current from the first common transfer electrode 202 to the first light-emitting component 200 during power-on use.

[0110] For example, such as Figure 6 As shown, a first insulating layer 2023 can be added between the first common transfer electrode 202 and the first light-emitting component 200. The first insulating layer 2023 can be an insulating layer made of silicon dioxide, silicon nitride, aluminum oxide or other insulating materials.

[0111] Alternatively, in other embodiments, the portion of the first light-emitting component 200 near the first common transfer electrode 202 can be bombarded with ions to form an insulating region in the first light-emitting component 200. Of course, other methods can also be used to create an insulating arrangement between the first common transfer electrode 202 and the first light-emitting component 200, which will not be specifically listed here.

[0112] Optionally, the common power supply electrode 140, the first common lead-out electrode 201, the first common transfer electrode 202 and the second common lead-out electrode 301 can all be formed of a conductive material such as Cu, Cr, Ti, Ni metal or Au metal. Moreover, a metal bonding structure or a hybrid bonding structure can be formed between the first common lead-out electrode 201 and the common power supply electrode 140 and between the first common transfer electrode 202 and the second common lead-out electrode 301. For example, the bonding structure can be In-In bonding, Au-Au bonding or Cu-Cu bonding, or a hybrid bonding structure such as Cu / SiO2-Cu / SiO2 hybrid bonding, Cu / BCB-Cu / BCB hybrid bonding, Cu / PI-Cu / PI hybrid bonding. The metal bonding structure or the hybrid bonding structure can make the connection between components more secure and ensure the conductive effect between components.

[0113] Of course, in other embodiments, other fixing methods can be used to fix the first common lead-out electrode 201 and the common power supply electrode 140 and the first common transfer electrode 202 and the second common lead-out electrode 301.

[0114] In some embodiments, as shown in FIGS. 1A and 1B, the first common lead-out electrode 201 can include a first common lead-out portion 2011 and a second common lead-out portion 2012 connected to each other. Figure 5 Figure 6 Optionally, the first common lead-out electrode 201 can include a first common lead-out portion 2011 and a second common lead-out portion 2012 connected to each other. In the vertical direction of the stacking direction, the size of the first common lead-out portion 2011 is greater than the size of the second common lead-out portion 2012. The first common lead-out portion 2011 is bonded to the common power supply electrode 140, and the second common lead-out portion 2012 is conductively connected to the second semiconductor layer 213 and / or the second pixel defining electrode 230. In this way, the contact area of the first common lead-out electrode 201 and the common power supply electrode 140 can be increased, thereby facilitating the bonding of the first common lead-out portion 2011 to the common power supply electrode 140.

[0115] Optionally, the second common lead-out electrode 301 can also include a third common lead-out portion 3011 and a fourth common lead-out portion 3012 connected to each other. In the vertical direction of the stacking direction, the size of the third common lead-out portion 3011 is greater than the size of the fourth common lead-out portion 3012. The third common lead-out portion 3011 is bonded to the first common transfer electrode 202. Optionally, the fourth common lead-out portion 3012 is conductively connected to the fourth semiconductor layer 313 and / or the fourth pixel defining electrode 330.

[0116] ​In some embodiments, the first common adapter electrode 202 may include a first common adapter portion 2021 and a second common adapter portion 2022 connected to each other. In the direction perpendicular to the stacking direction, the size of the first common adapter portion 2021 is larger than the size of the second common adapter portion 2022. The third common lead-out portion 3011 is bonded to the first common adapter portion 2021, and the second common adapter portion 2022 is electrically connected to the common power supply electrode 140. Similarly, this arrangement can increase the contact area between the third common lead-out portion 3011 and the first common adapter electrode 202, thereby facilitating the bonding connection between the third common lead-out portion 3011 and the first common adapter electrode 202.

[0117] Optionally, the first common lead electrode 201 and the fourth common lead portion 3012 can be formed by deposition, which facilitates the fabrication of the LED display device 1.

[0118] In some embodiments, the common power supply electrode 140, the first common lead-out electrode 201, the first common transition electrode 202, and the second common lead-out electrode 301 can be configured in a ring surrounding the plurality of first pixel defining electrodes 220 and the plurality of second pixel defining electrodes 230. This arrangement facilitates the connection of the common power supply electrode 140 to an external reference voltage, simplifying the wiring of the LED display device 1. It also allows the plurality of first pixel defining electrodes 220 and the plurality of second pixel defining electrodes 230 to receive the voltage transmitted from the common power supply electrode 140 more evenly, thereby increasing the stability of the LED display device 1.

[0119] In some implementations, such as Figures 5-6 As shown, if the LED display device 1 includes a third light-emitting component 400, the third light-emitting component 400 may include a third common lead electrode 440. The LED display device 1 also includes a second common transfer electrode 441. The second common transfer electrode 441 can pass through the second light-emitting component 300 and the first light-emitting component 200, and one end can be conductively connected to the common power supply electrode 140. The other end can be conductively connected to the third common lead electrode 440 to transmit the reference voltage provided by the common power supply electrode 140 to the third common lead electrode 440.

[0120] Optionally, the second common transfer electrode 441 can include a first transfer electrode part 4411 and a second transfer electrode part 4412. The first transfer electrode part 4411 penetrates the first light emitting assembly 200 and is conductively connected to the common power supply electrode 140 at one end, and the second transfer electrode part 4412 penetrates the second light emitting assembly 300 and is conductively connected to the first transfer electrode part 4411 at one end and is conductively connected to the third common lead-out electrode 440 at one end. The specific structure of the first transfer electrode part 4411 and the second transfer electrode part 4412 can refer to the first common transfer electrode 202, which will not be described in detail herein.

[0121] The third lead-out electrode penetrates the P-type semiconductor and the active layer of the third light emitting assembly 400 and is in contact with the N-type semiconductor at one end away from the common power supply electrode 140, so that the third lead-out electrode can transmit the reference voltage to the N-type semiconductor.

[0122] The second common transfer electrode 441 is insulated from the second light emitting assembly 300 and the first light emitting assembly 200, and the third common lead-out electrode 440 is insulated from the P-type semiconductor and the active layer in the third light emitting assembly 400, so as to reduce the occurrence of current leakage. The specific insulation of the second common transfer electrode 441 and the third common lead-out electrode 440 will be described below with reference to the description of the second common lead-out part 2012 and the first common transfer electrode 202, which will not be described in detail herein.

[0123] The preparation process of the LED display device 1 is described below with reference to the structure of the LED display device 1.

[0124] As shown in FIG. 1, the LED display device 1 includes a driving substrate 100, a first light emitting assembly 200, a second light emitting assembly 300, and a third light emitting assembly 400. Figures 7-19 As shown in FIG. 1, the LED display device 1 includes a driving substrate 100, a first light emitting assembly 200, a second light emitting assembly 300, and a third light emitting assembly 400. Figures 7-9 The manufacturing method of the LED display device 1 in the embodiment of the present application is shown in FIG. 2, Figures 10-14 The manufacturing method of the LED display device 1 in the embodiment of the present application is shown in FIG. 2, Figures 7-9 The manufacturing method of the LED display device 1 in the embodiment of the present application is shown in FIG. 2,

[0125] S100: providing a driving substrate, wherein the driving substrate includes a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes.

[0126] Specifically, the positions of the plurality of first pixel supply electrodes 110 and the plurality of second pixel supply electrodes 120 can be placed on the substrate body 150 of the driving substrate one by one corresponding to the positions of the first pixels and the second pixels, and then the insulating medium layer 160 can be filled in the gaps of the plurality of first pixel supply electrodes 110 and the plurality of second pixel supply electrodes 120 to fix the positions of the plurality of first pixel supply electrodes 110 and the plurality of second pixel supply electrodes 120. Further, the side of the insulating medium layer 160 opposite to the substrate body can be polished by CMP to expose the plurality of first pixel supply electrodes 110 and the plurality of second pixel supply electrodes 120, and to make the plurality of first pixel supply electrodes 110 and the plurality of second pixel supply electrodes 120 flat with the surface of the insulating medium layer 160.

[0127] In some embodiments, if the LED display device 1 includes a plurality of third pixels, the driving substrate 100 can include a plurality of third pixel supply electrodes 130 corresponding to the positions of the required third pixels. The plurality of first pixel supply electrodes 110, the plurality of second pixel supply electrodes 120, and the plurality of third pixel supply electrodes 130 are arranged according to their required position intervals.

[0128] S200: laminating a first light-emitting component on a driving substrate, wherein the first light-emitting component includes a first light-emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode, and a first pixel transfer electrode, the first pixel defining electrodes and the second pixel defining electrode are located on both sides of the first light-emitting layer group, the first pixel defining electrode is located on the side of the first light-emitting layer group facing the driving substrate, and respectively cooperates with the first light-emitting layer group and the second pixel defining electrode to form a first pixel, wherein the first pixel defining electrode is respectively conductively connected with a corresponding first pixel supply electrode, and the first pixel transfer electrode penetrates the first light-emitting layer group.

[0129] Specifically, this step can be divided into the following steps:

[0130] S210: forming a first light-emitting layer group on a first temporary substrate, and forming a plurality of first pixel defining electrodes on the side of the first light-emitting layer group away from the first temporary substrate.

[0131] Specifically, this step can include steps S211-S214:

[0132] S211: providing a first temporary substrate.

[0133] The first temporary substrate 500 can be a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, or a substrate made of ceramic, glass, a PCB substrate, etc. In this embodiment, the first temporary substrate 500 is a silicon substrate, which has excellent electrical insulation, high thermal conductivity, high adhesion strength, high strength, shape stability, and easy removal, and is compatible with semiconductor process equipment and processes, and is suitable for high-yield display pixel preparation processes.

[0134] S212: The first light-emitting layer group can be formed on the first temporary substrate by a growth method.

[0135] The first semiconductor layer 211 of the first light-emitting layer group 210 is away from the first temporary substrate 500, and the second semiconductor layer 213 of the first light-emitting layer group 210 is close to the first temporary substrate 500.

[0136] Alternatively, the first light-emitting layer group 210 can be fixed on the first temporary substrate 500 by a transfer method, or other methods can also be used, which will not be listed one by one in this embodiment.

[0137] S213: Forming a first pixel defining electrode on the side of the first light-emitting layer group away from the first temporary substrate.

[0138] Specifically, an annealing process can be used to cover the first light-emitting layer group 210 with a transparent electrode layer 2211 and a first metal electrode layer 222 on the side away from the first temporary substrate 500. After the annealing process, the transparent electrode layer 2211 can form an ohmic contact with the first light-emitting layer group 210, and the transparent electrode layer 2211 can form an ohmic contact with the first metal electrode layer 222. Then, the transparent electrode layer 2211 and the first metal electrode layer 222 are etched to obtain a transparent electrode layer 221 and a plurality of first pixel defining electrodes 220. The positions of the plurality of first pixel defining electrodes 220 correspond one-to-one to the positions of the first pixels. Alternatively, the transparent electrode layer 221 and the first pixel defining electrodes 220 can be formed by a Liftoff method, which is not limited here.

[0139] S214: Forming a first interlayer insulating layer on the side of the first pixel defining electrode away from the first light-emitting layer group.

[0140] Further, the first interlayer insulating layer 250 can be formed on the side of the first pixel defining electrode 220 opposite to the first light emitting layer group 210. The material of the first interlayer insulating layer 250 can be silicon oxide, silicon nitride, BCB, PI or other materials, which are not limited herein. Further, the first via hole 2711 can be formed on the position of the first interlayer insulating layer 250 corresponding to the first pixel defining electrode 220 by twice exposure, development and etching process. Further, the first pixel lead electrode 270 can be formed in the first via hole 2711 by deposition, so that the second pixel lead electrode 350 is conductively connected with the first pixel defining electrode 220. Of course, in other embodiments, the first pixel lead electrode 270 can also be formed by other methods such as magnetron sputtering, electron beam evaporation, electroplating, etc., which are not limited herein.

[0141] Alternatively, in other embodiments, the first pixel lead electrode 270 can be fixed first so that the first pixel lead electrode 270 is conductively connected with the first pixel defining electrode 220, and then the first interlayer insulating layer 250 is filled to fix the first pixel lead electrode 270 and the first pixel defining electrode 220.

[0142] Optionally, the first interlayer insulating layer 250 and the first pixel lead electrode 270 opposite to the first light emitting layer group 210 can be made flat and maintain nanoscale flatness by chemical mechanical polishing (CMP) process, and the first pixel lead electrode 270 is exposed to the first interlayer insulating layer 250.

[0143] Optionally, when the thermal expansion coefficient of the first interlayer insulating layer 250 is greater than the thermal expansion coefficient of the first pixel lead electrode 270, the first pixel lead electrode 270 can be slightly concave on the surface of the first interlayer insulating layer 250, for example, the first pixel lead electrode 270 can be 3 nm lower than the surface of the first interlayer insulating layer 250. Such arrangement can prepare for the subsequent connection and bonding with the driving substrate 100, and facilitate the expansion of the first pixel lead electrode 270 during subsequent bonding. Optionally, when the thermal expansion coefficient of the first interlayer insulating layer 250 is close to the thermal expansion coefficient of the first pixel lead electrode 270, the first pixel lead electrode 270 can be flush with the surface of the first interlayer insulating layer 250. Such arrangement can prepare for the subsequent connection and bonding with the driving substrate 100.

[0144] S220: transferring the first light emitting layer group to the driving substrate, and conductively connecting the first pixel defining electrode with the corresponding first pixel power supply electrode respectively.

[0145] Optionally, one side of the driving substrate 100 provided with the first pixel supply electrode 110 and the first pixel lead-out electrode 270 exposed in the first light-emitting assembly 200 is subjected to plasma activation or chemical treatment, and then the first light-emitting assembly 200 is placed on the driving substrate 100 in a manner that the first pixel lead-out electrode 270 faces the first pixel supply electrode 110 of the driving substrate 100, and a bonding device can be used to precisely align and place the first pixel lead-out electrode 270 and the first pixel supply electrode 110. Then, a TCB (Thermal Compression Bonding) process can be further used to heat and bond the first pixel lead-out electrode 270 and the first pixel supply electrode 110, or a normal-temperature bonding process can be used to bond the first pixel lead-out electrode 270 and the first pixel supply electrode 110 to each other, so as to realize high-strength connection between the driving substrate 100 and the first light-emitting layer group 210.

[0146] Further, the first temporary substrate 500 can be removed by grinding, chemical etching, laser lift-off (LLO) or other processes, so as to expose the first light-emitting layer group 210, and the first light-emitting layer group 210 can be further etched by ICP or ground by CMP to a desired thickness.

[0147] S230: forming a second pixel defining electrode on the side of the first light-emitting layer group away from the driving substrate, and forming a first pixel transfer electrode penetrating through the first light-emitting layer group and conductively connected to the second pixel supply electrode.

[0148] Specifically, the second pixel defining electrode 230 can be formed on the side of the first light-emitting layer group 210 away from the driving substrate 100 by electroplating, deposition, photolithography, etching or the like, and the position of the second pixel defining electrode 230 corresponds to the position of the first pixel defining electrode 220, and the second pixel defining electrode 230 forms ohmic contact with the second semiconductor layer 213 of the first light-emitting layer group 210 to realize conductive connection. The reflectivity of the second pixel defining electrode 230 is less than that of the first pixel defining electrode 220, so that the first light-emitting layer group 210 forms a first resonant cavity. Optionally, the number of the second pixel defining electrode 230 can correspond to the number of the first pixel defining electrode 220, so as to form a plurality of first pixels.

[0149] Further, the first interconnection electrode 280 can be disposed on the side of the second pixel supply electrode 120 opposite to the first light emitting layer group 210, and the first interconnection electrode 280 is conductively connected to the plurality of second pixel defining electrodes 230. The first interconnection electrode 280 can be in a grid shape surrounding the second pixel defining electrodes 230, and one end of the first interconnection electrode 280 is disposed at the edge of the first light emitting layer group 210, so that the first interconnection electrode 280 can be connected to an external power supply to deliver a reference voltage to the second pixel defining electrodes 230, and the second pixel defining electrodes 230 can uniformly receive the reference voltage provided by the first interconnection electrode 280.

[0150] In addition, the first interconnection electrode 280 is disposed at a position different from the positions of other display pixels, so that the first interconnection electrode 280 does not affect the electrode connection of other display pixels.

[0151] Further, a second interlayer insulating layer 260 is filled on the side of the first light emitting layer group 210 away from the driving substrate 100, and the second interlayer insulating layer 260 covers the first light emitting layer group 210, the second pixel defining electrodes 230, and the first interconnection electrode 280.

[0152] Optionally, the first light emitting assembly 200 is deeply etched at positions corresponding to the second pixel supply electrodes 120 to form a plurality of through holes 2411 on the first light emitting layer group 210. The second pixel supply electrodes 120 can be exposed in the corresponding through holes 2411.

[0153] Optionally, in the vertical direction of the stacking direction, the distance from the edge of the portion of the first light emitting layer group 210 where the through hole 2411 is located to the edge of the first pixel defining electrode 220 is greater than or equal to one quarter of the size of the first pixel defining electrode 220 in the vertical direction. And / or, the distance from the edge of the portion of the first light emitting layer group 210 where the first pixel transfer electrode 240 is located to the edge of the second pixel defining electrode 230 is greater than or equal to one quarter of the size of the second pixel defining electrode 230 in the vertical direction. By limiting the distance of the through hole 2411 to the first pixel defining electrode 220 and the second pixel defining electrode 230 in this way, the current leakage of the first pixel to the first pixel transfer electrode 240 can be reduced, and the mutual interference can be reduced.

[0154] In some embodiments, an insulating region can be formed on the inner wall of the through hole 2411 of the first light emitting layer group 210 by ion bombardment, or a hole wall insulating layer 2412 can be disposed on the hole wall of the through hole 2411, so that the current in the first light emitting layer group 210 is not easy to leak from the through hole 2411, and mutual crosstalk is not easy to occur.

[0155] Optionally, the first pixel transfer electrode 240 can be disposed in the first via hole 2411 by deposition, electroplating or other methods, so that the first pixel transfer electrode 240 is conductively connected with the second pixel power supply electrode 120. Of course, in other embodiments, the first pixel transfer electrode 240 can also be disposed by electroplating, electron beam evaporation, magnetron sputtering or other methods.

[0156] In some embodiments, if the LED display device 1 includes a plurality of third pixels, the first light emitting assembly 200 needs to be etched in depth at the positions of the plurality of third pixel power supply electrodes 130 to form a plurality of second via holes 291 on the first light emitting layer group 210, and the third pixel power supply electrodes 130 are also exposed in the corresponding second via holes 291. Further, in some embodiments, an insulating region formed by ion bombardment can be provided on the inner wall of the second via hole 291 of the first light emitting layer group 210, or an insulating layer can be provided on the hole wall of the second via hole 291, so that the current in the first light emitting layer group 210 is not easy to leak from the second via hole 291, and mutual crosstalk between the two is not easy to occur.

[0157] Optionally, the second pixel transfer electrode 290 is also disposed in the second via hole 291, so that the second pixel transfer electrode 290 is conductively connected with the third pixel power supply electrode 130.

[0158] Then the second interlayer insulating layer 260 and the surface of the second pixel transfer electrode 290 can be flattened by ICP etching, grinding, chemical mechanical polishing (CMP) process or other methods.

[0159] S300: The second light emitting assembly is disposed on the side of the first light emitting assembly away from the driving substrate, wherein the second light emitting assembly includes a second light emitting layer group and a plurality of third pixel defining electrodes and at least one fourth pixel defining electrode located on both sides of the second light emitting layer group, the third pixel defining electrode is located on the side of the second light emitting layer group facing the first light emitting assembly, and respectively cooperates with the second light emitting layer group and the fourth pixel defining electrode to form a second pixel, the projection of the second pixel in the stacking direction of the first light emitting assembly and the second light emitting assembly is staggered with the first pixel, and the third pixel defining electrode is conductively connected with the corresponding second pixel power supply electrode via the first pixel transfer electrode.

[0160] Specifically, this step can be divided into the following steps:

[0161] S310: Forming a second light emitting layer group on the second temporary substrate, and forming a plurality of third pixel defining electrodes on the side of the second light emitting layer group away from the second temporary substrate.

[0162] Optionally, a second temporary substrate 600 is provided, wherein the second temporary substrate 600 can be a substrate made of sapphire, silicon, silicon carbide, ceramic, glass, PCB substrate or other materials.

[0163] Further, the second light emitting layer group 310 can be formed on the first temporary substrate 500 in a growing manner, and the thickness of the second light emitting layer group 310 can be controlled.

[0164] Then, a plurality of third pixel defining electrodes 320 corresponding to the second pixels are formed by an annealing and etching process. Then, a third interlayer insulating layer 340 is formed on the second light emitting layer group 310 and the side of the third pixel defining electrodes 320 opposite to the second temporary substrate 600, and the second pixel lead electrodes 350 are formed by twice exposure, development and etching of the third interlayer insulating layer 340 corresponding to the plurality of third pixel defining electrodes 320, so that the second pixel lead electrodes 350 are in conductive contact with the third pixel defining electrodes 320. Then, the side of the third interlayer insulating layer 340 opposite to the second light emitting layer group 310 is polished by a chemical mechanical polishing process to be flat,

[0165] Specifically, the detailed steps can refer to step S210, and the embodiment and the drawing will not be described in detail.

[0166] S320: transferring the second light emitting layer group to the side of the first light emitting layer group away from the driving substrate, and electrically connecting the third pixel defining electrodes to the corresponding first pixel transfer electrodes respectively.

[0167] Optionally, the side of the first light emitting layer group 210 exposed to the first pixel transfer electrodes 240 and the side of the second light emitting layer group 310 exposed to the second pixel lead electrodes 350 can be treated by plasma activation or chemical treatment, and then the second light emitting layer group 310 is transferred to the side of the first light emitting layer group 210 away from the driving substrate 100 with the second pixel lead electrodes 350 facing the first light emitting layer group 210, and the bonding equipment can be used to accurately align and place the second pixel lead electrodes 350 and the first pixel transfer electrodes 240.

[0168] Further, the TCB process can be used to heat and bond the second pixel lead electrodes 350 and the first pixel transfer electrodes 240, so that the second pixel lead electrodes 350 and the first pixel transfer electrodes 240 are bonded to each other, thereby realizing high-strength connection between the first light emitting layer group 210 and the second light emitting layer group 310.

[0169] Optionally, the second temporary substrate 600 can be removed by grinding, chemical etching or laser lift-off (LLO) process, so that the second light emitting layer group 310 is exposed, and the first light emitting layer group 210 can be further thinned to control the thickness of the first light emitting layer group 210.

[0170] Specifically, the fourth pixel defining electrode 330 can be formed on the side of the second light emitting layer group 310 facing away from the first light emitting assembly 200 by plating, deposition or the like, and the position of the fourth pixel defining electrode 330 corresponds to the position of the third pixel defining electrode 320. The second pixel defining electrode 230 is in conductive connection with the second semiconductor layer 213 of the first light emitting layer group 210.

[0171] Similarly, the reflectivity of the fourth pixel defining electrode 330 is less than that of the third pixel defining electrode 320, so that the second light emitting layer group 310 forms a second resonant cavity. Optionally, the number of fourth pixel defining electrodes 330 can correspond to the number of third pixel defining electrodes 320 to form a plurality of first pixels.

[0172] Further, a second interconnection electrode 360 can be arranged on the side of the fourth pixel defining electrode 330 facing away from the second light emitting layer group 310. The second interconnection electrode 360 is in conductive connection with a plurality of fourth pixel defining electrodes 330, so that the second interconnection electrode 360 and the plurality of fourth pixel defining electrodes 330 together form an N electrode of the second light emitting layer group 310. The second interconnection electrode 360 can surround the fourth pixel defining electrode 330 in a grid shape, and one end of the second interconnection electrode 360 is arranged at the edge of the second light emitting layer group 310. The second interconnection electrode 360 can be connected to an external power supply to deliver a reference voltage to the fourth pixel defining electrode 330, and the fourth pixel defining electrode 330 can uniformly receive the reference voltage provided by the second interconnection electrode 360.

[0173] Moreover, the arrangement position of the second interconnection electrode 360 is also staggered with the arrangement position of other display pixels, so that the second interconnection electrode 360 is less likely to affect the electrode connection of other display pixels.

[0174] In some embodiments, if the LED display device 1 further includes a third pixel, a third light emitting assembly 400 for the third pixel needs to be stacked on the side of the second light emitting layer group 310 facing away from the first light emitting layer group 210.

[0175] S330: A fourth interlayer insulating layer is filled on the side of the second light emitting layer group facing away from the first light emitting layer group.

[0176] Further, a fourth interlayer insulating layer 380 is filled on the side of the second light emitting layer group 310 facing away from the first light emitting layer group 210. The fourth interlayer insulating layer 380 covers the second light emitting layer group 310, the fourth pixel defining electrode 330 and the second interconnection electrode 360.

[0177] Optionally, the second light emitting layer group 310 is etched in depth at positions corresponding to the third pixel supply electrode 130 to form a plurality of third through holes 371 in the second light emitting layer group 310, the plurality of third through holes 371 correspond to the plurality of second through holes 291 formed on the first light emitting layer group 210 to expose the second pixel transfer electrode 290.

[0178] Further, in some embodiments, an insulating region can be formed on the inner wall of the third through hole 371 of the second light emitting layer group 310 by ion bombardment, or an insulating layer can be provided on the hole wall of the third through hole 371, so that the current in the second light emitting layer group 310 is not easy to leak from the third through hole 371, and the mutual crosstalk between the two is not easy to occur.

[0179] Optionally, the third pixel transfer electrode 370 can be disposed in the third through hole 371 by deposition, electroplating or the like, so that the second pixel transfer electrode 290 and the third pixel transfer electrode 370 are conductively connected.

[0180] Then the fourth interlayer insulating layer 380 and the surface of the third pixel transfer electrode 370 can be flattened by ICP etching, grinding, chemical mechanical polishing (CMP) process or the like.

[0181] S400: The third light emitting component is stacked on the side of the second light emitting component away from the first light emitting component, wherein the third light emitting component includes a third light emitting layer group and a plurality of fifth pixel defining electrodes and at least one sixth pixel defining electrode located on both sides of the third light emitting layer group, the fifth pixel defining electrode is located on the side of the third light emitting layer group facing the second light emitting component, and respectively forms a third pixel with the third light emitting layer group and the sixth pixel defining electrode, the projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel, and the fifth pixel defining electrode is conductively connected with the corresponding third pixel supply electrode through the second pixel transfer electrode and the third pixel transfer electrode.

[0182] Specifically, the third light emitting component 400 is provided, and the preparation process of the third light emitting component 400 can be divided into the following steps:

[0183] S410: Forming a third light emitting layer group on the third temporary substrate, and forming a plurality of fifth pixel defining electrodes on the side of the third light emitting layer group away from the third temporary substrate.

[0184] Similarly, the third temporary substrate 700 is provided, wherein the third temporary substrate 700 can be a substrate made of sapphire, silicon, silicon carbide, ceramic, glass, PCB substrate or the like. Further, the third light emitting layer group 410 can be formed on the first temporary substrate 500 by growth, and the thickness of the third light emitting layer group 410 is controlled. Then, a plurality of fifth pixel defining electrodes 420 are formed at positions corresponding to the third pixel by etching after annealing.

[0185] Further, a fifth interlayer insulating layer 450 is formed on the side of the third light emitting layer group 410 and the fifth pixel defining electrode 420 opposite to the third temporary substrate 700, and the fifth interlayer insulating layer 450 is exposed twice for exposure and etching to add a third pixel lead electrode 460, so that the third pixel lead electrode 460 is in conductive contact with the fifth pixel defining electrode 420.

[0186] Then, the side of the third interlayer insulating layer 340 opposite to the second light emitting layer group 310 is polished by a chemical mechanical polishing (CMP) process to make it flat.

[0187] Specifically, the detailed details of this step can refer to step S210, and the embodiment will not be specifically described here.

[0188] S420: Transfer the third light emitting layer group to the side of the second light emitting layer group away from the first light emitting layer group, and conductively connect the fifth pixel defining electrode to the corresponding third pixel transfer electrode.

[0189] Optionally, the side of the second light emitting layer group 310 exposed to the third pixel transfer electrode 370 and the side of the third light emitting layer group 410 exposed to the third pixel lead electrode 460 can be treated by plasma activation or chemical treatment, and then the third light emitting layer group 410 is transferred to the side of the second light emitting layer group 310 away from the first light emitting layer group 210 with the third pixel lead electrode 460 facing the second light emitting layer group 310, and the bonding equipment can be used to accurately align and place the third pixel lead electrode 460 and the third pixel transfer electrode 370.

[0190] Further, the TCB process can be used to heat and bond the third pixel lead electrode 460 and the third pixel transfer electrode 370, so that the third pixel lead electrode 460 and the third pixel transfer electrode 370 are bonded to each other, thereby realizing high-strength connection between the second light emitting layer group 310 and the third light emitting layer group 410.

[0191] Optionally, the third temporary substrate 700 can be removed by grinding, chemical etching or laser lift-off (LLO) process, so that the third light emitting layer group 410 is exposed, and the third light emitting layer group 410 can be further thinned to control the thickness of the third light emitting layer group 410.

[0192] S430: Form a sixth pixel defining electrode on the side of the third light emitting layer group away from the second light emitting group.

[0193] Optionally, a sixth pixel defining electrode 430 can be formed on the side of the first light emitting layer group 210 away from the driving substrate 100 by plating, deposition or the like, and the position of the sixth pixel defining electrode 430 corresponds to the position of the fifth pixel defining electrode 420. The sixth pixel defining electrode 430 is in conductive connection with the second semiconductor layer 213 of the third light emitting layer group 410 to form a plurality of third pixels.

[0194] The reflectivity of the sixth pixel defining electrode 430 is less than that of the fifth pixel defining electrode 420, so that the third light emitting layer group 410 forms a resonant cavity. Optionally, the number of the sixth pixel defining electrode 430 can correspond to the number of the fifth pixel defining electrode 420.

[0195] Further, a third interconnection electrode 470 can be arranged on the side of the sixth pixel defining electrode 430 away from the third light emitting layer group 410. The third interconnection electrode 470 is also in conductive connection with a plurality of sixth pixel defining electrodes 430. The third interconnection electrode 470 can surround the sixth pixel defining electrode 430 in a grid shape, and one end of the third interconnection electrode 470 is arranged at the edge of the third light emitting layer group 410, so that the third interconnection electrode 470 can be connected to an external power supply to deliver a reference voltage to the third pixel defining electrode 320.

[0196] Moreover, the arrangement position of the third interconnection electrode 470 is staggered with the arrangement position of other display pixels, so that the third interconnection electrode 470 does not easily affect the electrode connection of other display pixels.

[0197] By the above method, an LED display device 1 with three kinds of pixels can be obtained. The wavelength of the first pixel is different from that of the second pixel and the third pixel, so that the first pixel, the second pixel and the third pixel can emit light of different colors.

[0198] In other embodiments, after the LED display device 1 is prepared, other process steps can be added according to requirements. For example, as shown in FIG. 6, a plurality of microlenses can be added to the LED display device 1. The plurality of microlenses are arranged on the side opposite to the driving substrate 100 and correspond to the positions of the respective pixels to form a microlens array to further control the light pattern of the outgoing light. Figure 15

[0199] In other embodiments, other ways can also be used to arrange the common N electrode of the LED display device 1.

[0200] For example, as shown in FIG. 7, a common N electrode can be arranged at the outer position of the LED display device 1 and connected to the first light emitting layer group 210, the second light emitting layer group 310 and the third light emitting layer group 410. The specific steps can be as shown in the following description. Figures 16-19

[0201] ​​Optionally, a driving substrate 100 is provided. The driving substrate 100 can further include a common power supply electrode 140.

[0202] Optionally, a first light emitting component 200 and a second light emitting component 300 are provided. The first light emitting component 200 further includes a first common lead-out electrode 201, the first light emitting component 200 further includes a second common lead-out electrode 301, a first light emitting layer group 210 includes a first semiconductor layer 211, a first active layer 212 and a second semiconductor layer 213 which are sequentially stacked, the first semiconductor layer 211 is located at a side of the first active layer 212 facing the driving substrate 100, a second light emitting layer group 310 includes a third semiconductor layer 311, a second active layer 312 and a fourth semiconductor layer 313 which are sequentially stacked, the third semiconductor layer 311 is located at a side of the second active layer 312 facing the first light emitting component 200.

[0203] The first common lead-out electrode 201 penetrates the first semiconductor layer 211 and the first active layer 212, and is conductively connected with the second semiconductor layer 213 and / or the second pixel defining electrode 230, the second common lead-out electrode 301 penetrates the third semiconductor layer 311 and the second active layer 312, and is conductively connected with the fourth semiconductor layer 313 and / or the fourth pixel defining electrode 330.

[0204] Optionally, as shown in FIG. 2B, the process of preparing the second light emitting component 300 can refer to S210, but after step S213, the following steps are further included: Figure 15

[0205] S510: A first common lead-out electrode is arranged at a side of the first light emitting layer group facing away from the first temporary substrate.

[0206] Optionally, after the plurality of first pixel defining electrodes 220 are formed, etching treatment is performed at positions corresponding to the first common lead-out electrode 201, and a first recessed area 214 is formed penetrating the first semiconductor layer 211 and the first active layer 212. The first recessed area 214 can present a ring shape at a side of the first semiconductor layer 211 facing away from the active layer, and surround an area of each first pixel electrode. Moreover, the depth of the first recessed area 214 can be less than the thickness of the first light emitting layer group 210, and the first recessed area 214 can expose the second semiconductor layer 213.

[0207] ​Further, the first interlayer insulating layer 250 can be provided, and a hole, a deep etching, or the like can be formed in a position corresponding to the first recessed area 214 and a position of the plurality of first pixel defining electrodes 220, so as to form a first via hole 2711 exposing the plurality of first pixel defining electrodes 220 and a hole corresponding to the first common electrode 201. Then, the first common electrode 201 and the plurality of first pixel electrodes 270 can be provided by deposition or electroplating, and the like, and electrically connected to the second semiconductor layer 213.

[0208] In other embodiments, the first common electrode 201 can be provided in the first recessed area 214, so as to be electrically connected to the second semiconductor layer 213 and / or the second pixel defining electrode 230, and then the first interlayer insulating layer 250 can be filled.

[0209] Then, the third interlayer insulating layer 340 is polished by a chemical mechanical polishing (CMP) process to be flat on a side opposite to the second light emitting layer group 310.

[0210] In the preparation of the second light emitting assembly 300, the second common electrode 301 can also be provided on a side of the second light emitting layer group 310 opposite to the second temporary substrate. This step can refer to step S510, and the present embodiment will not be repeated.

[0211] In the preparation of the third light emitting assembly 400, the third common electrode 440 can also be provided on a side of the third light emitting layer group 410 opposite to the third temporary substrate. This step can also refer to step S510, and the present embodiment will not be repeated.

[0212] Therefore, in some embodiments, as shown in FIG. 2, the step of stacking the first light emitting assembly 200 on the driving substrate 100 further includes: Figure 17

[0213] S511: electrically connecting the first common electrode to the common power supply electrode, and forming a first common transfer electrode, wherein the first common transfer electrode penetrates the first light emitting layer group and is electrically connected to the common power supply electrode.

[0214] ​Specifically, when the first light emitting layer group 210 is transferred to the side of the first light emitting layer group 210 away from the driving substrate 100, the first common lead electrode 201 corresponds to the common power supply electrode 140, and the first pixel defining electrode 220 corresponds to the first pixel power supply electrode 110, respectively. Then, the first pixel lead electrode 270 and the first pixel power supply electrode 110, the first common lead electrode 201 and the common power supply electrode 140 can be further bonded (or room temperature bonded) by using the TCB process to make the first pixel lead electrode 270 and the first pixel power supply electrode 110 bonded to each other, and the first common lead electrode 201 and the common power supply electrode 140 bonded to each other.

[0215] Further, the first temporary substrate 500 can be removed by grinding, chemical etching or laser lift-off (LLO) process, etc. to expose the first light emitting layer group 210, and the first light emitting layer group 210 can be further thinned to the required thickness.

[0216] Optionally, the second pixel defining electrode 230 and the second interlayer insulating layer 260 can be formed, at this time, the second pixel defining electrode 230 only serves as a mirror to form a resonant cavity without electrical connection. Then, the first light emitting layer group 210 can be etched in depth at the positions corresponding to the second common lead electrode 301 and the positions corresponding to the plurality of second pixel power supply electrodes 120 to form a plurality of holes corresponding to the second common lead electrode 301 and a plurality of through holes 2411 on the first light emitting layer group 210. The holes corresponding to the second common lead electrode 301 penetrate the first light emitting layer group 210 and expose the common power supply electrode 140, and the through holes 2411 expose the second pixel power supply electrode 120.

[0217] Optionally, a first insulating layer 2023 can be added to the inner wall of the annular hole, or the inner wall of the annular hole can be ion bombarded to form an insulating region. Further, the first common transfer electrode 202 can be added to the annular hole by electroplating, deposition or the like, and the first pixel transfer electrode 240 can be arranged in the through hole 2411 to make the first common transfer electrode 202 conductively connected to the common power supply electrode 140 and the first pixel transfer electrode 240 conductively connected to the second pixel power supply electrode 120.

[0218] If the LED display device 1 includes a third light-emitting component 400, the third light-emitting component 400 can include a third common lead electrode 440, at which time the first light-emitting component 200 can be subjected to deep etching at a position corresponding to the third common lead electrode 440 and a position corresponding to a third pixel to respectively expose the common power supply electrode 140 and the third pixel power supply electrode 130, and a corresponding insulating layer can be provided on the inner wall of the hole. Further, a first transfer electrode part 4411 and a second pixel transfer electrode 290 can be respectively added in the corresponding hole by electroplating, deposition or the like, so that the first transfer electrode part 4411 is in conductive connection with the common power supply electrode 140, and the second pixel transfer electrode 290 is in conductive connection with the third pixel power supply electrode 130.

[0219] Alternatively, as shown in FIG. 4B, the step of stacking the second light-emitting component 300 on the side of the first light-emitting component 200 away from the driving substrate 100 includes: Figure 18

[0220] S521: The second common lead electrode is in conductive connection with the first common transfer electrode.

[0221] Specifically, the second light-emitting layer group 310 is transferred to the side of the first light-emitting layer group 210 away from the driving substrate 100 in a manner that the second common lead electrode 301 is aligned with the first common transfer electrode 202 and the third pixel defining electrode 320 is respectively corresponding to the first pixel transfer electrode 240. Similarly, the TCB process can be further used to heat and bond the third pixel defining electrode 320 and the first pixel transfer electrode 240, and the second common lead electrode 301 and the first common transfer electrode 202.

[0222] Further, the second temporary substrate 600 can be removed by grinding, chemical etching or laser lift-off (LLO) process, so that the second light-emitting layer group 310 is exposed, and the second light-emitting layer group 310 can be further thinned to the required thickness.

[0223] If the LED display device 1 includes a third light-emitting component 400, the second light-emitting component 300 can be subjected to deep etching at a position corresponding to the third common lead electrode 440 and a position corresponding to a third pixel to form a hole exposing the first transfer electrode part 4411 and the second pixel transfer electrode 290, and a corresponding insulating layer can be added on the inner wall of the hole. Then, a second transfer electrode part 4412 and a third pixel transfer electrode 370 can be respectively added in the corresponding hole by electroplating, deposition or the like, so that the second transfer electrode part 4412 is in conductive connection with the first transfer electrode part 4411, and the third pixel transfer electrode 370 is in conductive connection with the second pixel transfer electrode 290.

[0224] ​Optionally, the specific steps of bonding the third common lead-out electrode 440 in the third light emitting assembly 400 with the second adapter electrode part 4412 and bonding the third pixel adapter electrode 370 with the fifth pixel defining electrode 420 can refer to the steps S400, steps S521 and the specific description of the figures 5A and 5B. Figure 19 The present embodiment will not be specifically described here.

[0225] By the above-mentioned manner, the common N electrode of each light emitting assembly can be arranged at the edge position of each light emitting assembly, so that the light emitting surface of each light emitting assembly is more uniform and flat, so as to improve the light emitting efficiency of the LED display device 1, and also can reduce the preparation difficulty of the LED display device 1 and improve the yield.

[0226] Similarly, in other embodiments, functional layers can also be added on the side of the LED display device 1 away from the driving substrate 100, for example, adding microlenses for each pixel electrode, etc.

[0227] In summary, the present application stacks the multi-layer first light emitting assembly 200 and the second light emitting assembly 300 on the driving substrate 100, so as to arrange the first pixel and the second pixel on different planes, thereby reducing the preparation difficulty caused by the high-density pixel point integrated array in the same plane, so that the display pixel point density of the LED display device 1 can be ensured while the preparation difficulty of the LED display device 1 is reduced. Moreover, in this way, the damage of the LED display device 1 caused by excessive etching in the same plane assembly can be reduced, thereby improving the yield of the LED chip.

[0228] The above is only an embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent flow transformation using the content of the present application specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An LED display device, characterized by, The LED display device comprises: a driving substrate comprising a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes; a first light-emitting assembly comprising a first light-emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode, and a plurality of first pixel transfer electrodes, the first pixel defining electrodes and the second pixel defining electrode being located on both sides of the first light-emitting layer group, the first pixel defining electrodes being located on a side of the first light-emitting layer group facing the driving substrate and cooperating with the first light-emitting layer group and the second pixel defining electrode to form first pixels respectively, wherein the first pixel defining electrodes are conductively connected to corresponding first pixel power supply electrodes respectively, and the first pixel transfer electrodes penetrate the first light-emitting layer group; a second light-emitting assembly being stacked on a side of the first light-emitting assembly away from the driving substrate and comprising a second light-emitting layer group and a plurality of third pixel defining electrodes and at least one fourth pixel defining electrode located on both sides of the second light-emitting layer group, the third pixel defining electrodes being located on a side of the second light-emitting layer group facing the first light-emitting assembly and cooperating with the second light-emitting layer group and the fourth pixel defining electrode to form second pixels respectively, a projection of the second pixels in a stacking direction of the first light-emitting assembly and the second light-emitting assembly being staggered with the first pixels, and the third pixel defining electrodes being conductively connected to corresponding second pixel power supply electrodes via corresponding first pixel transfer electrodes respectively.

2. The LED display device of claim 1, wherein, In a direction perpendicular to the stacking direction, a distance from an edge of a portion of the first pixel transfer electrodes located in the first light-emitting layer group to an edge of the first pixel defining electrode is greater than or equal to one fourth of a dimension of the first pixel defining electrode along the perpendicular direction, and / or In the direction perpendicular to the stacking direction, a distance from an edge of the portion of the first pixel transfer electrodes located in the first light-emitting layer group to an edge of the second pixel defining electrode is greater than or equal to one fourth of a dimension of the second pixel defining electrode along the perpendicular direction.

3. The LED display device of claim 1, wherein, The first light-emitting layer group is provided with an insulating region formed by ion bombardment at a periphery of the first pixel transfer electrodes; or The first light-emitting layer group comprises a first semiconductor layer, a first active layer and a second semiconductor layer which are sequentially stacked, the first semiconductor layer is located at a side of the first active layer facing the driving substrate, and thickness and resistivity of the first semiconductor layer are set so that a transverse current diffusion length of the first semiconductor layer satisfies wherein Ls is the transverse current diffusion length of the first semiconductor layer, and D1 is the shortest distance between an edge of a portion of the first pixel transfer electrode located in the first light-emitting layer group and an edge of the first pixel boundary electrode arranged adjacently; or The first light-emitting layer group is provided with a through hole, the first pixel transfer electrodes penetrating the through hole, and a hole wall insulating layer being provided on a hole wall of the through hole.

4. The LED display device of claim 1, wherein, The first light-emitting assembly is fixed to the driving substrate in a metal bonding manner or a hybrid bonding manner, and the second light-emitting assembly is fixed to a side of the first light-emitting assembly away from the driving substrate in a metal bonding manner or a hybrid bonding manner.

5. The LED display device of claim 4, wherein, The first light-emitting component further comprises a first interlayer insulating layer, a second interlayer insulating layer and a first pixel lead electrode, the first interlayer insulating layer covers one side of the first light-emitting layer group facing the driving substrate and the first pixel defining electrode, one end of the first pixel lead electrode is in conductive connection with the third pixel defining electrode, the other end of the first pixel lead electrode is exposed from the third interlayer insulating layer towards the side of the first light-emitting layer group, the first pixel lead electrode and the first pixel transfer electrode are in bonding connection with each other. The second light-emitting component further comprises a third interlayer insulating layer and a second pixel lead electrode, the third interlayer insulating layer covers one side of the second light-emitting layer group facing the first light-emitting layer group and the third pixel defining electrode, one end of the second pixel lead electrode is in conductive connection with the third pixel defining electrode, the other end of the second pixel lead electrode is exposed from the third interlayer insulating layer towards the side of the first light-emitting layer group, the second pixel lead electrode and the first pixel transfer electrode are in bonding connection with each other.

6. The LED display device of claim 5, wherein, The first pixel supply electrode comprises a first pixel supply part and a second pixel supply part connected to each other, the first pixel lead electrode comprises a first pixel lead part and a second pixel lead part connected to each other, in the vertical direction of the stacking direction, the size of the first pixel supply part is greater than the size of the second pixel supply part, the size of the first pixel lead part is greater than the size of the second pixel lead part, the first pixel supply part and the first pixel lead part are in bonding connection with each other, the second pixel supply part is in conductive connection with the first pixel defining electrode. The second pixel lead electrode comprises a third pixel lead part and a fourth pixel lead part connected to each other, the first pixel transfer electrode comprises a first pixel transfer part and a second pixel transfer part connected to each other, in the vertical direction of the stacking direction, the size of the first pixel transfer part is greater than the size of the second pixel transfer part, the size of the third pixel lead part is greater than the size of the fourth pixel lead part, the first pixel transfer part and the third pixel lead part are in bonding connection with each other, the fourth pixel lead part is in conductive connection with the third pixel defining electrode.

7. The LED display device of claim 6, wherein, The second pixel lead part and the first pixel defining electrode, the fourth pixel lead part and the third pixel defining electrode, and the second pixel transfer part and the second pixel supply electrode are respectively in conductive connection in a deposition manner.

8. The LED display device of claim 1, wherein, The number of the second pixel defining electrodes corresponds to the number of the first pixel defining electrodes, the first light-emitting component further comprises a first interconnection electrode in conductive connection with the plurality of second pixel defining electrodes, and / or, The fourth pixel defining electrode corresponds to a plurality of the third pixel defining electrodes, and the second light emitting component further includes a second interconnection electrode electrically connecting the plurality of fourth pixel defining electrodes.

9. The LED display device of claim 8, wherein, The second pixel defining electrode has a reflectivity less than that of the first pixel defining electrode, and a thickness of the first light emitting layer group is controlled to form a first resonant cavity for light emission from a side of the second pixel defining electrode, and the first interconnection electrode is arranged in a grid shape and partially covers the second pixel defining electrode along an edge of the second pixel defining electrode; and / or The fourth pixel defining electrode has a reflectivity less than that of the third pixel defining electrode, and a thickness of the second light emitting layer group is controlled to form a second resonant cavity for light emission from a side of the fourth pixel defining electrode, and the second interconnection electrode is arranged in a grid shape and partially covers the fourth pixel defining electrode along an edge of the fourth pixel defining electrode.

10. The LED display device of claim 1, wherein, The driving substrate further includes a common power supply electrode, the first light emitting component further includes a first common lead-out electrode and a first common transfer electrode, the second light emitting component further includes a second common lead-out electrode, the first light emitting layer group includes a first semiconductor layer, a first active layer and a second semiconductor layer arranged in sequence, the first semiconductor layer is located on a side of the first active layer facing the driving substrate, the second light emitting layer group includes a third semiconductor layer, a second active layer and a fourth semiconductor layer arranged in sequence, the third semiconductor layer is located on a side of the second active layer facing the first light emitting component, wherein the first common lead-out electrode penetrates the first semiconductor layer and the first active layer and is electrically connected with the second semiconductor layer and / or the second pixel defining electrode, the first common transfer electrode penetrates the first light emitting layer group, the first common lead-out electrode and the first common transfer electrode are respectively electrically connected with the common power supply electrode, the second common lead-out electrode penetrates the third semiconductor layer and the second active layer and is electrically connected with the fourth semiconductor layer and / or the fourth pixel defining electrode, and the second common lead-out electrode is electrically connected with the common power supply electrode via the first common transfer electrode.

11. The LED display device of claim 10, wherein, The first common lead-out electrode includes a first common lead-out portion and a second common lead-out portion connected with each other, in a direction perpendicular to the stacking direction, a size of the first common lead-out portion is greater than a size of the second common lead-out portion, the first common lead-out portion is in a key connection with the common power supply electrode, and the second common lead-out portion is in electrical connection with the second semiconductor layer and / or the second pixel defining electrode. The second common lead-out electrode includes a third common lead-out portion and a fourth common lead-out portion connected with each other, in a direction perpendicular to the stacking direction, a size of the third common lead-out portion is greater than a size of the fourth common lead-out portion, the third common lead-out portion is in a key connection with the first common transfer electrode, and the fourth common lead-out portion is in electrical connection with the fourth semiconductor layer and / or the fourth pixel defining electrode.

12. The LED display device of claim 11, wherein, The first common transfer electrode includes a first common transfer portion and a second common transfer portion connected to each other, a size of the first common transfer portion is greater than a size of the second common transfer portion in a direction perpendicular to the stacking direction, the third common lead portion is bonded to the first common transfer portion, and the second common transfer portion is conductively connected to the common power supply electrode.

13. The LED display device of claim 10, wherein, The common power supply electrode, the first common lead electrode, the first common transfer electrode, and the second common lead electrode are arranged in a ring shape around the periphery of the plurality of first pixel defining electrodes and the plurality of second pixel defining electrodes.

14. The LED display device of claim 1, wherein, The output light wavelength of the first light emitting assembly is greater than the output light wavelength of the second light emitting assembly.

15. The LED display device of claim 1, wherein, The driving substrate further includes a plurality of third pixel power supply electrodes, the first light emitting assembly further includes a second pixel transfer electrode penetrating through the first light emitting layer group, and the second light emitting assembly further includes a third pixel transfer electrode penetrating through the second light emitting layer group and being in abutment with the second pixel transfer electrode. The LED display device further includes a third light emitting assembly, the third light emitting assembly is arranged in a stacking manner on a side of the second light emitting assembly away from the first light emitting assembly, and includes a third light emitting layer group, a plurality of fifth pixel defining electrodes, and at least one sixth pixel defining electrode located on both sides of the third light emitting layer group, the fifth pixel defining electrodes are located on a side of the third light emitting layer group facing the second light emitting assembly, and respectively form third pixels in cooperation with the third light emitting layer group and the sixth pixel defining electrode, a projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel, and the fifth pixel defining electrode is conductively connected to the corresponding third pixel power supply electrode through the second pixel transfer electrode and the third pixel transfer electrode.

16. The LED display device of claim 15, wherein, The third light emitting assembly is fixed to the side of the second light emitting assembly away from the first light emitting assembly in a metal bonding manner or a hybrid bonding manner, the output light wavelength of the first light emitting assembly is greater than the output light wavelength of the second light emitting assembly, and the output light wavelength of the second light emitting assembly is greater than the output light wavelength of the third light emitting assembly.

17. A method of manufacturing an LED display device, characterized by, The manufacturing method includes: providing a driving substrate, wherein the driving substrate includes a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes; arranging a first light emitting assembly in a stacking manner on the driving substrate, wherein the first light emitting assembly includes a first light emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode, and a first pixel transfer electrode, the first pixel defining electrodes and the second pixel defining electrodes are located on both sides of the first light emitting layer group, the first pixel defining electrodes are located on a side of the first light emitting layer group facing the driving substrate, and respectively form first pixels in cooperation with the first light emitting layer group and the second pixel defining electrode, the first pixel defining electrodes are respectively conductively connected to the corresponding first pixel power supply electrodes, and the first pixel transfer electrode penetrates through the first light emitting layer group; The second light-emitting component is arranged on the side of the first light-emitting component away from the driving substrate, wherein the second light-emitting component comprises a second light-emitting layer group and a plurality of third pixel defining electrodes and at least one fourth pixel defining electrode located on both sides of the second light-emitting layer group, the third pixel defining electrodes are located on the side of the second light-emitting layer group facing the first light-emitting component, and each of the third pixel defining electrodes cooperates with the second light-emitting layer group and the fourth pixel defining electrode to form a second pixel, the projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel, and the third pixel defining electrode is conductively connected with the corresponding second pixel power supply electrode through the first pixel transfer electrode.

18. The manufacturing method according to claim 17, wherein The driving substrate further comprises a plurality of third pixel power supply electrodes, the first light-emitting component further comprises a second pixel transfer electrode penetrating the first light-emitting layer group, and the second light-emitting component further comprises a third pixel transfer electrode penetrating the second light-emitting layer group and being in butt joint with the second pixel transfer electrode. The method further comprises: The third light-emitting component is arranged on the side of the second light-emitting component away from the first light-emitting component, wherein the third light-emitting component comprises a third light-emitting layer group and a plurality of fifth pixel defining electrodes and at least one sixth pixel defining electrode located on both sides of the third light-emitting layer group, the fifth pixel defining electrodes are located on the side of the third light-emitting layer group facing the second light-emitting component, and each of the fifth pixel defining electrodes cooperates with the third light-emitting layer group and the sixth pixel defining electrode to form a third pixel, the projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel, and the fifth pixel defining electrode is conductively connected with the corresponding third pixel power supply electrode through the second pixel transfer electrode and the third pixel transfer electrode.

19. The manufacturing method according to claim 17, wherein The step of arranging the first light-emitting component on the driving substrate comprises: forming a first light-emitting layer group on a first temporary substrate, and forming a plurality of first pixel defining electrodes on the side of the first light-emitting layer group away from the first temporary substrate; transferring the first light-emitting layer group to the driving substrate, and conductively connecting the first pixel defining electrodes with the corresponding first pixel power supply electrodes, respectively; forming the second pixel defining electrodes on the side of the first light-emitting layer group away from the driving substrate, and forming the first pixel transfer electrode penetrating the first light-emitting layer group and conductively connecting the second pixel power supply electrodes; The step of arranging the second light-emitting component on the side of the first light-emitting component away from the driving substrate comprises: forming a second light-emitting layer group on a second temporary substrate, and forming a plurality of third pixel defining electrodes on the side of the second light-emitting layer group away from the second temporary substrate; transferring the second light-emitting layer group to the side of the first light-emitting layer group away from the driving substrate, and conductively connecting the third pixel defining electrodes with the corresponding first pixel transfer electrodes, respectively; forming the fourth pixel defining electrodes on the side of the second light-emitting layer group away from the first light-emitting component.

20. The manufacturing method according to claim 19, wherein The driving substrate further comprises a plurality of third pixel supply electrodes, and the step of layering the first light emitting component on the driving substrate further comprises: forming second pixel transfer electrodes penetrating through the first light emitting layer group and electrically connecting the third pixel supply electrodes; The step of layering the second light emitting component on the side of the first light emitting component away from the driving substrate comprises: forming third pixel transfer electrodes penetrating through the second light emitting layer group and being in butt joint with the second pixel transfer electrodes; The method further comprises: forming a third light emitting layer group on a third temporary substrate, and forming a plurality of fifth pixel defining electrodes on the side of the third light emitting layer group away from the third temporary substrate; transferring the third light emitting layer group to the side of the second light emitting layer group away from the first light emitting layer group, and electrically connecting the fifth pixel defining electrodes with the corresponding third pixel transfer electrodes respectively; forming sixth pixel defining electrodes on the side of the third light emitting layer group away from the second light emitting component.

21. The manufacturing method according to claim 17, wherein The driving substrate further comprises a common supply electrode, the first light emitting component further comprises a first common lead electrode, the first light emitting component further comprises a second common lead electrode, the first light emitting layer group comprises a first semiconductor layer, a first active layer and a second semiconductor layer which are sequentially layered, the first semiconductor layer is located on the side of the first active layer facing the driving substrate, the second light emitting layer group comprises a third semiconductor layer, a second active layer and a fourth semiconductor layer which are sequentially layered, the third semiconductor layer is located on the side of the second active layer facing the first light emitting component, wherein the first common lead electrode penetrates through the first semiconductor layer and the first active layer, and is electrically connected with the second semiconductor layer and / or the second pixel defining electrode, the second common lead electrode penetrates through the third semiconductor layer and the second active layer, and is electrically connected with the fourth semiconductor layer and / or the fourth pixel defining electrode; The step of layering the first light emitting component on the driving substrate further comprises: electrically connecting the first common lead electrode with the common supply electrode, and forming a first common transfer electrode, wherein the first common transfer electrode penetrates through the first light emitting layer group, and is electrically connected with the common supply electrode; The step of layering the second light emitting component on the side of the first light emitting component away from the driving substrate comprises: electrically connecting the second common lead electrode with the first common transfer electrode. The driving substrate further comprises a common supply electrode, the first light emitting component further comprises a first common lead electrode, the first light emitting component further comprises a second common lead electrode, the first light emitting layer group comprises a first semiconductor layer, a first active layer and a second semiconductor layer which are sequentially layered, the first semiconductor layer is located on the side of the first active layer facing the driving substrate, the second light emitting layer group comprises a third semiconductor layer, a second active layer and a fourth semiconductor layer which are sequentially layered, the third semiconductor layer is located on the side of the second active layer facing the first light emitting component, wherein the first common lead electrode penetrates through the first semiconductor layer and the first active layer, and is electrically connected with the second semiconductor layer and / or the second pixel defining electrode, the second common lead electrode penetrates through the third semiconductor layer and the second active layer, and is electrically connected with the fourth semiconductor layer and / or the fourth pixel defining electrode; The step of layering the first light emitting component on the driving substrate further comprises: electrically connecting the first common lead electrode with the common supply electrode, and forming a first common transfer electrode, wherein the first common transfer electrode penetrates through the first light emitting layer group, and is electrically connected with the common supply electrode; The step of layering the second light emitting component on the side of the first light emitting component away from the driving substrate comprises: electrically connecting the second common lead electrode with the first common transfer electrode.

Images