Image forming apparatus

Abstract

There is provided an imaging device including: a plurality of pixel units each including a first photoelectric conversion portion and a second photoelectric conversion portion having different light receiving sensitivities, and a node disposed between the first photoelectric conversion portion and the second photoelectric conversion portion; and a connection portion that electrically connects the node of one of the pixel units to the node of another of the pixel units.

Description

Technical Field

[0001] This disclosure relates to an imaging device. Background Technology

[0002] There has always been a need for an imaging device capable of expanding the illumination range (i.e., dynamic range) of an imaged object in order to enable hierarchical imaging of the object. Here, as described in Patent Document 1 below, a technique is proposed that expands the dynamic range by changing the area of ​​a pair of photodiodes constituting a pixel unit and detecting the same color light in a planar view, thereby intentionally providing different light-receiving sensitivities between the pair of photodiodes. Citation List Patent documents

[0003] Patent Document 1: JP 2023-11858 A Summary of the Invention Technical issues

[0004] In recent years, there has been a growing demand for imaging devices with increased pixel counts (maximum pixel count) in order to obtain higher-resolution images. However, in imaging devices, as the number of pixels increases, the output data also increases, and decreases in readout and processing speeds, increases in power consumption, and increases in data rates are inevitable.

[0005] This disclosure presents an imaging device that achieves improved readout and processing speeds, reduced power consumption, and suppression of data rate increases without reducing the number of pixels. Solution to the problem

[0006] According to this disclosure, an imaging apparatus is provided, comprising: a plurality of pixel units, each pixel unit including a first photoelectric conversion section and a second photoelectric conversion section having different light-receiving sensitivities and a node disposed between the first photoelectric conversion section and the second photoelectric conversion section; and a connecting section that electrically connects the node of one pixel unit to the node of another pixel unit. Attached Figure Description

[0007] Figure 1 This is an explanatory diagram showing an example of the construction of an imaging apparatus 10 according to an embodiment of the present disclosure. Figure 2 It is an equivalent circuit diagram based on pixel unit 100a of the comparative example. Figure 3A This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100a according to the comparative example. Figure 3BThis is an explanatory diagram showing an example of the cross-sectional structure of the main components of the pixel unit 100a according to the comparative example. Figure 4 This is a (first) explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a first embodiment of the present disclosure. Figure 5 This is a (second) explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to the first embodiment of the present disclosure. Figure 6 This is an explanatory diagram showing an example of the stacked structure of the imaging apparatus 10 according to a first embodiment of the present disclosure. Figure 7A This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a second embodiment of the present disclosure. Figure 7B This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a second embodiment of the present disclosure. Figure 8A This is a (first) explanatory diagram showing a planar construction example of the main components of the pixel unit 100 according to a third embodiment of the present disclosure. Figure 8B This is a (first) equivalent circuit diagram of the main components of the pixel unit 100 according to the third embodiment of this disclosure. Figure 9A This is a (second) explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a third embodiment of the present disclosure. Figure 9B This is a (second) equivalent circuit diagram of the main components of the pixel unit 100 according to the third embodiment of this disclosure. Figure 10A This is a (third) explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a third embodiment of the present disclosure. Figure 10B This is a (third) equivalent circuit diagram of the main components of the pixel unit 100 according to the third embodiment of this disclosure. Figure 11A This is a fourth explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a third embodiment of the present disclosure. Figure 11B This is a (fourth) equivalent circuit diagram of the main components of the pixel unit 100 according to the third embodiment of this disclosure. Figure 12A This is a fifth explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to a third embodiment of the present disclosure. Figure 12B This is a (fifth) equivalent circuit diagram of the main components of the pixel unit 100 according to the third embodiment of this disclosure. Figure 13A This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the fourth embodiment of this disclosure. Figure 13B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the fourth embodiment of this disclosure. Figure 14A This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the fifth embodiment of this disclosure. Figure 14B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the fifth embodiment of this disclosure. Figure 15A This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the sixth embodiment of the present disclosure. Figure 15B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to the sixth embodiment of the present disclosure. Figure 16 This is an explanatory diagram illustrating a schematic example of the functional construction of a camera. Figure 17 This is a block diagram illustrating a schematic example of the functional construction of a smartphone. Figure 18 This is a block diagram illustrating a schematic example of the construction of a vehicle control system. Figure 19 This diagram illustrates the installation locations of the vehicle exterior information detection unit and the imaging unit. Detailed Implementation

[0008] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. Note that in this specification and drawings, components with substantially the same functional structure are denoted by the same reference numerals, and repeated descriptions are omitted. Furthermore, in this specification and drawings, multiple components with substantially the same or similar functional structures can be distinguished from each other by adding different letters after the same reference numerals. However, when it is not necessary to specifically distinguish multiple components with substantially the same or similar functional structures, only the same reference numerals are assigned.

[0009] Furthermore, the accompanying drawings referenced in the following description are for explaining embodiments of this disclosure and to aid in understanding it. For ease of understanding, the shapes and dimensions shown in the drawings may differ from actual shapes and dimensions. Moreover, the description of a particular shape in the following description refers not only to shapes in terms of geometry but also to shapes similar to a particular shape, and such particular shape may vary (errors or distortions) within permissible limits during the manufacture and use of the imaging device. For example, in the following description, the expression "substantially circular shape" is not limited to a perfect circle but also refers to shapes similar to a perfect circle, such as an ellipse. Furthermore, the device design shown in the drawings can be appropriately modified in consideration of the following description and known techniques.

[0010] Furthermore, in the following description, "electrical connection" refers to a direct connection of multiple components or an indirect connection via another component.

[0011] Furthermore, in the following description, "shared" means that different components (e.g., photodiodes and pixel units) use another component (e.g., on-chip lenses and floating diffusers) in a shared manner.

[0012] 1. Schematic structure of the imaging device 1.1 Imaging Device 1.2 pixel unit 2. Development Background of the Embodiments of this Disclosure 3. First Embodiment 4. Second Embodiment 5. Third embodiment 6. Fourth Embodiment 7. Fifth Embodiment 8. Sixth Embodiment 9. Summary 10. Application Examples 10.1 Application Examples on Cameras 10.2 Examples of applications on smartphones 10.3 Application Examples on Moving Bodies 11. Supplement

[0013] 1. Schematic structure of the imaging device 1.1 Imaging Device Reference Figure 1 A schematic configuration of the imaging apparatus 10 according to an embodiment of the present disclosure is described. Figure 1 This is an explanatory diagram showing an example of a planar structure of the imaging apparatus 10 according to an embodiment of the present disclosure. Figure 1 As shown, the imaging apparatus 10 according to an embodiment of this disclosure includes, for example, a pixel array section 33 in which a plurality of pixel units 100 are arranged in a matrix on a semiconductor substrate 15 made of silicon; and a peripheral circuit section disposed around the pixel array section 33. Furthermore, the imaging apparatus 10 also includes a column signal processing circuit section 34, a vertical drive circuit section 35, a horizontal drive circuit section 36, an output circuit section 38, and a control circuit section 40, etc., as peripheral circuit sections. The various modules included in the imaging apparatus 10 will be described in detail below.

[0014] Pixel array section 33 Pixel array portion 33 includes a plurality of pixel units 100, which are arranged along the row direction ( Figure 1 (X direction) and column direction ( Figure 1The pixels are arranged two-dimensionally on the semiconductor substrate 15 in the Y direction. Each pixel unit 100 includes: a photodiode (photoelectric conversion unit) (not shown) for performing photoelectric conversion on incident light to generate charge; and a plurality of pixel transistors (e.g., metal-oxide-semiconductor (MOS) transistors (not shown). Examples of pixel transistors include MOS transistors such as transfer transistors, selection transistors, reset transistors, and amplification transistors. The pixel unit 100 will be described in detail later.

[0015] Column signal processing circuit section 34 The column signal processing circuit unit 34 is arranged for each pixel unit 100 and performs signal processing, such as noise cancellation, on a column-by-column basis on the pixel signals output from a row of pixel units 100. For example, the column signal processing circuit unit 34 performs signal processing such as correlated double sampling (CDS) for eliminating pixel-specific fixed-pattern noise and analog-to-digital (AD) conversion.

[0016] Vertical drive circuit section 35 The vertical driving circuit section 35, for example, is composed of a shift register. It selects the pixel driving line 42, provides pulses to the selected pixel driving line 42 for driving the pixel unit 100, and drives the pixel unit 100 row by row. That is, the vertical driving circuit section 35 drives the pixel unit 100 row by row in the vertical direction. Figure 1 The pixel array section 33 sequentially and selectively scans each pixel unit 100 in the pixel array section 33 in the Y direction, and provides the pixel signal based on the signal charge generated according to the amount of light received by the photodiode of each pixel unit 100 to the column signal processing circuit section 34, which will be described later, via the vertical signal line 44.

[0017] Horizontal drive circuit section 36 The horizontal drive circuit section 36 is, for example, composed of a shift register. It sequentially selects the column signal processing circuit section 34 by sequentially outputting horizontal scan pulses, and outputs pixel signals from each column signal processing circuit section 34 to the horizontal signal line 46.

[0018] Output circuit section 38 The output circuit section 38 performs signal processing on the pixel signals sequentially provided from the column signal processing circuit section 34 via the horizontal signal line 46, and outputs the processed signal. The output circuit section 38 can, for example, function as a buffering unit, or perform various processing such as black level adjustment, column change correction, and various types of digital signal processing. Note that buffering refers to temporarily storing pixel signals to compensate for differences in processing speed and transmission speed when exchanging pixel signals. Furthermore, the input / output terminal 48 is a terminal for exchanging signals with external devices.

[0019] Control circuit section 40 The control circuit unit 40 receives input clock and data for indicating operating modes, and outputs data such as internal information of the imaging device 10. Specifically, based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, the control circuit unit 40 generates clock and control signals as operating references for the vertical drive circuit unit 35, the column signal processing circuit unit 34, and the horizontal drive circuit unit 36. The control circuit unit 40 outputs the generated clock and control signals to the vertical drive circuit unit 35, the column signal processing circuit unit 34, and the horizontal drive circuit unit 36.

[0020] Note that in the embodiments of this disclosure, the imaging device 10 is not limited to... Figure 1 The pattern shown can be changed to various other patterns.

[0021] 1.2 pixel unit Next, we will refer to Figure 2 The detailed construction of pixel unit 100a according to the comparative example is explained. Figure 2 This is an equivalent circuit diagram of pixel unit 100a according to the comparative example. Here, the comparative example refers to pixel unit 100a that the inventors of this invention studied before developing the disclosed embodiments of this invention.

[0022] like Figure 2 As shown, pixel unit 100a includes photodiodes (photoelectric conversion units) PD1 and PD2, serving as photoelectric conversion elements that convert light into electrical charge. Pixel unit 100a includes, for example, transistors AMP, FCG, FDG, RST, SEL, TGL, and TGS, serving as pixel transistors. Pixel unit 100a also includes a capacitor element FC and a floating diffusion unit (charge accumulation unit) FD. Figure 2 In the example shown, transistors AMP, FCG, FDG, RST, SEL, TGL, and TGS are n-type MOS transistors.

[0023] exist Figure 2 The example shown illustrates control lines FCGL, FDGL, TGLL, and TGSL, the reset signal line RSTL, the select line SELL, and the signal line SGL. Control line TGLL is horizontal (…). Figure 1The vertical drive circuit 35 extends along the X direction and applies the signal STGL to the control line TGLL. The control line FDGL extends horizontally and applies the signal SFDG to the control line FDGL. The reset signal line RSTL extends horizontally and applies the signal SRST to the reset signal line RSTL. The control line FCGL extends horizontally and applies the signal SFCG to the control line FCGL. The control line TGSL extends horizontally and applies the signal STGS to the control line TGSL. The select line SELL extends horizontally and applies the signal SSEL to the select line SELL. The signal line SGL extends vertically (in the X direction). Figure 1 It extends in the Y direction and is electrically connected to the above-mentioned column signal processing circuit section 34.

[0024] Photodiodes PD1 and PD2 are photoelectric conversion elements (photoelectric conversion sections) capable of generating and accumulating charge corresponding to the amount of received light. Specifically, photodiodes PD1 and PD2 include a photoelectric conversion region containing a first conductivity type (e.g., n-type) impurity, which is disposed in a second conductivity type (e.g., p-type) impurity region formed in a semiconductor substrate 15, for example, made of silicon. For example, in the comparative example, the light-receiving area of ​​photodiode PD1 is larger than that of photodiode PD2. Therefore, the light-receiving sensitivity of photodiode PD1 is higher than that of photodiode PD2. In other words, the pixel unit 100a according to the comparative example includes a pair of photodiodes PD1 and PD2 that detect light of the same color, and intentionally provides a difference in light-receiving sensitivity between the pair of photodiodes PD1 and PD2. That is, the pixel unit 100a according to the comparative example has a sub-pixel structure.

[0025] like Figure 2 As shown, the anode of photodiode PD1 is grounded, and the cathode of photodiode PD1 is electrically connected to one of the source and drain of transistor TGL. Furthermore, the anode of photodiode PD2 is grounded, and the cathode of photodiode PD2 is electrically connected to one of the source and drain of transistor TGS.

[0026] Furthermore, the gate of transistor TGL is connected to the control line TGLL, one of the source and drain of transistor TGL is electrically connected to the cathode of photodiode PD1, and the other of the source and drain of transistor TGL is electrically connected to the floating diffuser FD. Therefore, transistor TGL turns on according to the voltage applied to its gate and transfers the charge generated in photodiode PD1 to the floating diffuser FD. That is, transistor TGL functions as a transfer transistor.

[0027] Furthermore, for example, the floating diffusion section FD accumulates the charge from photodiodes PD1 and PD2, and is formed using an impurity diffusion layer formed on the front surface of the semiconductor substrate 15. Figure 2 In the diagram, the floating diffuser FD is represented by a capacitor element.

[0028] Furthermore, the floating diffuser FD is electrically connected to the gate of transistor AMP; transistor AMP is an amplifying transistor that converts charge into voltage and outputs the voltage as a signal. One of the source and drain of transistor AMP is electrically connected to one of the source and drain of transistor SEL; transistor SEL is a selection transistor that outputs the signal obtained through conversion to signal line SGL according to the selection signal. The other of the source and drain of transistor AMP is electrically connected to the power supply circuit (power supply potential VDD).

[0029] One of the source and drain terminals of transistor SEL is electrically connected to signal line SGL, which transmits the converted voltage as a signal, and is also electrically connected to the column signal processing circuit section 34 described above. Furthermore, the gate of transistor SEL is electrically connected to selection line SELL, which selects the row of the signal to be output, and is also electrically connected to the vertical drive circuit section 35 described above. That is, under the control of transistor SEL, the charge accumulated in the floating diffuser FD is converted into voltage (pixel signal) by transistor AMP and output to signal line SGL.

[0030] like Figure 2 As shown, the floating diffuser FD is electrically connected to one of the drain and source terminals of transistor RST via transistor FDG; transistor RST is a reset transistor used to reset accumulated charge. The gate of transistor RST is electrically connected to the reset signal line RSTL and also electrically connected to the aforementioned vertical drive circuit section 35. The other of the drain and source terminals of transistor RST is electrically connected to the power supply circuit (power supply potential VDD). Therefore, transistor RST turns on according to the voltage applied to its gate and can reset the accumulated charge in the floating diffuser FD (releasing the charge to the power supply circuit (power supply potential VDD)).

[0031] Furthermore, one of the source and drain of transistor TGS is electrically connected to the cathode of photodiode PD2, and the gate of transistor TGS is connected to the control line TGSL. Transistor TGS turns on according to the voltage applied to its gate and can transfer the charge generated in photodiode PD2 to the floating diffusion section FD, etc. That is, transistor TGS is used as a transport transistor.

[0032] The source and drain of transistor TGS are electrically connected to one end of capacitor element FC and the source and drain of transistor FCG.

[0033] One end of capacitor FC is electrically connected to the other of the source and drain of transistor TGS and one of the source and drain of transistor FCG, and one end of capacitor FC is electrically connected to the power supply circuit (power supply potential VDD).

[0034] The gate of transistor FCG is connected to the control line FCGL, and one of the source and drain of transistor FCG is electrically connected to one end of capacitor element FC and the other of the source and drain of transistor TGS. In addition, the other of the source and drain of transistor FCG is electrically connected to one of the source and drain of transistor RST and one of the source and drain of transistor FDG.

[0035] The gate of transistor FDG is connected to the control line FDGL, one of the source and drain of transistor FDG is electrically connected to one of the source and drain of transistor RST and the other of the source and drain of transistor FCG, and the other of the source and drain of transistor FDG is electrically connected to the floating diffuser FD.

[0036] When the signal SFDG is applied to the gate of transistor FDG, transistor FDG turns on, thus forming a combined capacitance between the floating diffuser FD and transistor FDG. Because the capacitance value increases in this way, the conversion efficiency of charge to voltage signal can be reduced. That is, transistor FDG acts as a switching transistor for switching transmission efficiency.

[0037] Furthermore, when signal SFDG is applied to the gate of transistor FDG and signal SFCG is applied to the gate of transistor FCG, transistors FDG and FCG are turned on. Therefore, transistors FDG and FCG form a combined capacitance with the capacitor element FC, and the charge generated in photodiode PD2 can accumulate. That is, transistor FCG acts as a capacitor-connected transistor connected to the capacitor element FC.

[0038] In the comparative example, as described above, the light-receiving area of ​​photodiode PD1 is larger than that of photodiode PD2. Therefore, when imaging an object with a certain illumination level at a certain exposure time, the charge generated in photodiode PD1 is greater than the charge generated in photodiode PD2. That is, since photodiode PD1 generates a larger amount of charge, it can be said to be an imaging element that can image an object even under low illumination.

[0039] Therefore, when the charges generated in photodiode PD1 and photodiode PD2 are transferred to the floating diffuser FD, and a charge-to-voltage conversion is performed on each charge, the voltage change before and after the charge generated in photodiode PD1 is transferred to the floating diffuser FD is greater than the voltage change before and after the charge generated in photodiode PD2 is transferred to the floating diffuser FD. Therefore, when comparing photodiodes PD1 and PD2, it can be said that photodiode PD1 is more sensitive than photodiode PD2.

[0040] On the other hand, photodiode PD2 has a smaller light-receiving area than photodiode PD1, and therefore generates less charge. Thus, even with a highly illuminated imaging object, the charge generated in photodiode PD2 is less likely to saturate the floating diffuser FD. Even when high-illuminance light is incident on photodiode PD2, generating a charge exceeding its saturation point, photodiode PD2 can accumulate this excess charge in components such as capacitor FC. Therefore, when performing charge-to-voltage conversion on the charge generated in photodiode PD2, the accumulated charge in photodiode PD2 can be added to the accumulated charge in components such as capacitor FC before the conversion is performed. Therefore, compared to photodiode PD1, photodiode PD2 can capture grayscale images over a wider illumination range. In other words, photodiode PD2 can capture images with a wide dynamic range.

[0041] Therefore, in the imaging apparatus 10 according to the comparative example, two images can be obtained: a high-sensitivity image imaged using photodiode PD1 and a wide dynamic range image imaged using photodiode PD2. Then, for example, in an image signal processing circuit provided inside the imaging apparatus 10 or in an externally connected image signal processing device, the two images are combined into one image by a wide dynamic range image combining process for combining the two images into one image.

[0042] Note that the equivalent circuit of pixel unit 100a according to the comparative example is not limited to... Figure 2 The example shown. The equivalent circuit may include other elements, for example, and there are no particular limitations.

[0043] Next, we will refer to Figure 3A and Figure 3B The detailed construction of pixel unit 100a according to the comparative example is explained. Figure 3A This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100a according to the comparative example. Figure 3A In Figure 3, the on-chip lens 106 is not shown. Furthermore, in Figure 3, "R" represents a photodiode PD for detecting red light, "B" represents a photodiode PD for detecting blue light, and "G" represents a photodiode PD for detecting green light (this also applies to the figures referenced below). Figure 3B This is an explanatory diagram showing an example of the cross-sectional structure of the main components of the pixel unit 100a according to the comparative example, and corresponding to the... Figure 3A The cross-sectional view taken by line A-A' is shown.

[0044] In the comparative example, multiple photodiodes (PDs) are arranged in the pixel array section 33 according to a predetermined rule. Specifically, in the comparative example, such as... Figure 3A As shown, photodiode PD1 has an octagonal shape in the plan view, and photodiode PD2 has a quadrilateral shape in the plan view. A pair of photodiodes PD1 and PD2 arranged adjacent to each other constitute pixel unit 100a and have the same type (same color) color filter 104 for transmitting light with wavelengths within a predetermined band. Furthermore, photodiodes PD1 and PD2 each include an on-chip lens 106, which has a substantially circular shape in the plan view (see [reference]). Figure 3B ).

[0045] In addition, such as Figure 3B As shown, in the comparative example, photodiodes PD1 and PD2 constituting a pixel unit 100a each mainly include, for example, an on-chip lens 106, a color filter 104, and a light-shielding portion 108. Photodiodes PD1 and PD2 also each include a photoelectric conversion region 102 disposed in the semiconductor substrate 15.

[0046] Specifically, such as Figure 3B As shown, photodiodes PD1 and PD2 each include an on-chip lens 106, which is disposed above the light incident surface of the semiconductor substrate 15 and converges the incident light onto the photoelectric conversion region 102. In a comparative example, the incident light converged by the on-chip lens 106 passes through a color filter 104 disposed below the on-chip lens 106 and is incident onto the photoelectric conversion region 102. The color filter 104 may be, for example, a color filter that transmits light with a red wavelength component, a color filter that transmits light with a green wavelength component, or a color filter that transmits light with a blue wavelength component, etc.

[0047] like Figure 3BAs shown, a light-shielding portion 108 is disposed on the light-incident surface of the semiconductor substrate 15 and surrounds the color filter 104. The light-shielding portion 108 is disposed between adjacent photodiodes PD1 and PD2, thereby providing light shielding between the adjacent photodiodes PD1 and PD2. Although in Figure 3B Although not shown, an interlayer insulating film may be provided between the semiconductor substrate 15 and the color filter 104.

[0048] Furthermore, in comparative examples, such as Figure 3B As shown, in a semiconductor substrate 15 having a second conductivity type (e.g., p-type), photoelectric conversion regions 102 containing impurities of a first conductivity type (e.g., n-type) are respectively provided for photodiodes PD1 and PD2. The photoelectric conversion regions 102 can absorb light with red wavelength components, light with green wavelength components, and light with blue wavelength components incident through the color filter 104, and generate charges.

[0049] Furthermore, component isolation walls (not shown) may be provided in the semiconductor substrate 15 to surround and physically isolate the photoelectric conversion regions 102 respectively provided for photodiodes PD1 and PD2. Component isolation walls may be formed, for example, by deep trench isolation (DTI). DTI is formed by forming trenches that extend from the light incident surface of the semiconductor substrate 15 through the semiconductor substrate 15 until they extend along the thickness direction of the semiconductor substrate 15 to a certain point, or through the entire semiconductor substrate 15; and embedding a material formed of an oxide film or a metal film in the trench.

[0050] Furthermore, for example, the charge generated in the photoelectric conversion region 102 is transferred through a pixel transistor (not shown) disposed on the side of the semiconductor substrate 15 opposite to the light incident surface to a floating diffusion section FD disposed in an impurity diffusion region having a first conductivity type (e.g., n-type) located in the semiconductor substrate 15.

[0051] Note that the construction of pixel unit 100a according to the comparative example is not limited to... Figure 3A and Figure 3B The examples shown may include other elements, and there are no particular limitations.

[0052] 2. Development Background of the Embodiments of this Disclosure Next, before describing the embodiments of this disclosure, the background that led the inventors to develop the embodiments of this disclosure will be explained.

[0053] As described above, in the comparative example, in order to further expand the illumination range (i.e., dynamic range) of the imaging object capable of grayscale imaging, the surface areas of photodiodes PD1 and PD2, which detect the same color light, are changed in the planar view to intentionally provide a difference in light-receiving sensitivity between photodiodes PD1 and PD2. That is, the pixel unit 100a of the imaging device 10 according to the comparative example has a sub-pixel structure; in this structure, a difference in light-receiving sensitivity is intentionally provided between the pair of photodiodes PD1 and PD2 that detect the same color light.

[0054] In recent years, there has been a strong demand to increase the number of pixels (maximum number of pixels), i.e., the number of pixel units 100a, in order to obtain higher resolution images. However, since the imaging device 10 according to the comparative example has a sub-pixel structure, when the number of pixel units 100a increases, the output data increases, and the decrease in readout and processing speed, the increase in power consumption, and the increase in data rate are inevitable.

[0055] In view of this situation, the inventors have developed embodiments of this disclosure to achieve improved readout and processing speeds, reduced power consumption, and suppression of data rate increases without reducing the number of pixel units 100 (pixel count). In embodiments of this disclosure, the floating diffuser portions FD of the pixel units 100 are connected via connecting portions (e.g., transistors), and the floating diffuser portions FD are shared among multiple pixel units 100. Furthermore, embodiments of this disclosure provide a mode in which the output signals of the multiple pixel units 100 connected via the aforementioned connecting portions are summed within the imaging apparatus 10. In this manner, according to embodiments of this disclosure, improved readout and processing speeds, reduced power consumption, and suppression of data rate increases can be achieved without reducing the number of pixel units 100 (pixel count). Furthermore, according to embodiments of this disclosure, since the output signals of the multiple pixel units 100 connected via the connecting portions are summed, the signal-to-noise ratio (S / N ratio) of the signal finally output from the imaging apparatus 10 can be improved.

[0056] The details of the embodiments of this disclosure developed by the inventors will now be described in sequence.

[0057] 3. First Embodiment First, refer to Figures 4 to 6 The first embodiment of this disclosure is described. Figure 4 and Figure 5 This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to this embodiment. Figure 4 and Figure 5 In the diagram, the on-plate lens 106 is not shown, and in Figure 4 and Figure 5In the diagram, "R" represents a photodiode PD that detects red light, "B" represents a photodiode PD that detects blue light, and "G" represents a photodiode PD that detects green light (this also applies to the accompanying figures referenced in the following description). Furthermore, Figure 6 This is an explanatory diagram illustrating an example of the stacked structure of the imaging apparatus 10 according to this embodiment. Note that in the following description, it is assumed that the embodiments of this disclosure are applied to the imaging apparatus 10 having a sub-pixel structure.

[0058] In this embodiment, multiple photodiodes (PDs) are arranged in the pixel array section 33 according to a predetermined rule. Specifically, as shown... Figure 4 As shown, pixel units 100, each comprising a pair of photodiodes PD1 and PD2 arranged adjacent to each other and detecting light of the same color, are arranged on a semiconductor substrate 15 along the row direction. Figure 4 (X direction) and column direction ( Figure 4 The Y-direction in the matrix is ​​arranged into a matrix.

[0059] Specifically, such as Figure 4 As shown, the plurality of pixel units 100 includes, for example, pairs of photodiodes PD1 and PD2 that generate charge using light with a red wavelength component (e.g., wavelengths from 620 nm to 750 nm), pairs of photodiodes PD1 and PD2 that generate charge using light with a green wavelength component (e.g., wavelengths from 495 nm to 570 nm), and pairs of photodiodes PD1 and PD2 that generate charge using light with a blue wavelength component (e.g., wavelengths from 450 nm to 495 nm). Furthermore, the plurality of pixel units 100 are arranged, for example, in a two-dimensional Bayer array. Here, the Bayer array is an array pattern in which the pixel units 100 containing the pairs of photodiodes PD1 and PD2 for detecting green light are arranged in a checkerboard pattern, and in the remaining portions, the pixel units 100 containing the pairs of photodiodes PD1 and PD2 for detecting red light and the pixel units 100 containing the pairs of photodiodes PD1 and PD2 for detecting blue light are alternately arranged in each column. Note that in this embodiment, the array of the plurality of pixel units 100 is not limited to a Bayer array.

[0060] In this embodiment, photodiode PD1, which has higher light sensitivity than photodiode PD2 (second photoelectric conversion unit), has an approximately octagonal shape in the plan view, and its light-receiving area is larger than that of photodiode PD2. That is, in this embodiment, the sensitivity of photodiode PD1 is higher than that of photodiode PD2. Photodiode PD2 has an approximately quadrilateral shape in the plan view. Pairs of photodiodes PD1 and PD2, arranged adjacent to each other and detecting the same color of light, constitute a pixel unit 100. Note that in this embodiment, the shape of the photodiode PD is not limited to the shape described above.

[0061] Furthermore, the paired photodiodes PD1 and PD2, which detect the same color, each include a color filter 104 of the same type (same color) for transmitting light with wavelengths within a predetermined band. Specifically, the color filter 104 may be a color filter that transmits light with a red wavelength component (e.g., wavelengths from 620 nm to 750 nm), a color filter that transmits light with a green wavelength component (e.g., wavelengths from 495 nm to 570 nm), or a color filter that transmits light with a blue wavelength component (e.g., wavelengths from 450 nm to 495 nm), etc. In this embodiment, the color filter 104 is not limited to a color filter having any of the above-mentioned colors, and may be a color filter that transmits light with wavelength components of other colors. The color filter 104 may be formed from a material obtained by dispersing pigments or dyes in a transparent binder such as silicone resin.

[0062] Furthermore, each of the paired photodiodes PD1 and PD2 includes a circular on-chip lens 106 (not shown). Note that the cross-sections of photodiodes PD1 and PD2 in this embodiment are different from those of the photodiodes PD1 and PD2. Figure 3B The cross-sectional views of the comparative examples shown are the same, so their descriptions are omitted here.

[0063] exist Figure 4 In the example shown, the light-receiving area of ​​photodiode PD1 is larger than that of photodiode PD2, therefore, the light-receiving sensitivity of photodiode PD1 is higher than that of photodiode PD2. However, this embodiment is not limited to providing a difference in light-receiving sensitivity between photodiodes PD1 and PD2 that detect the same color light by providing a difference in surface area between the light-receiving areas. In this embodiment, for example, the color filters 104 of the pair of photodiodes PD1 and PD2 may have different refractive indices or different transmittances. In this way, the ease with which light is guided to the photoelectric conversion region 102 varies, and a difference in light-receiving sensitivity occurs between the pair of photodiodes PD1 and PD2 that detect the same color light.

[0064] Furthermore, the pixel unit 100 according to this embodiment includes a node electrically connected to a pair of photodiodes PD1 and PD2, and this node is electrically connected to the floating diffuser FD via other components. Note that this node will be described in detail later.

[0065] Furthermore, in this embodiment, such as Figure 4As shown, a connection portion 250 is provided, which electrically connects the node to a node of another pixel unit 100 that detects light of the same color. The connection portion 250 includes, for example, wiring or transistors, and can electrically connect to the floating diffuser FD of the pixel unit 100 that detects light of the same color. In other words, the connection portion 250 can connect multiple pixel units 100 that contain a color filter 104 of the same color. In this way, the floating diffuser FD can be shared among multiple pixel units 100 that detect light of the same color.

[0066] For example, in Figure 4 In the example shown, the four pixel units 100 detecting the same color light are not adjacent to each other on the semiconductor substrate 15, but are electrically connected to each other via connection portions 250. In this embodiment, the number of pixel units 100 connected via connection portions 250 is not particularly limited, as long as there are two or more. Figure 4 In the example shown, the number of pixel units 100 that detect the same color of light connected by a single connection 250 is the same as the number of four pixel units 100 for each of the red, green, and blue colors, but this embodiment is not limited to this. For example, depending on the required specifications of the imaging device 10 or the light sensitivity of each color of light, the connection 250 may connect a different number of pixel units 100 for each color.

[0067] Furthermore, this embodiment is not limited to Figure 4 The example shown can be... Figure 5 The form shown. Specifically, as Figure 5 As shown, photodiode PD1, which has higher light sensitivity than photodiode PD2, has a basically L-shaped shape in the plan view, and its light-receiving area is wider than that of photodiode PD2. Furthermore, photodiode PD2 has a basically quadrilateral shape in the plan view. Additionally, in... Figure 5 In the example shown, the paired photodiodes PD1 and PD2 constituting a pixel unit 100 can share a generally circular on-chip lens 106 (not shown). Note that the cross-sections of photodiodes PD1 and PD2 in this embodiment are different from those of the photodiodes PD1 and PD2. Figure 3B The cross-sectional views of the comparative examples shown are the same, so their descriptions are omitted here.

[0068] Similarly, in Figure 5 In the example shown, pixel unit 100 includes a node electrically connected to a pair of photodiodes PD1 and PD2, and this node is electrically connected to the floating diffuser FD via other components. Furthermore, similarly, in Figure 5In the example shown, a connection portion 250 is also provided, which electrically connects the node to a node of another pixel unit 100 that detects light of the same color. The connection portion 250 is formed of, for example, wiring or a transistor, and can be electrically connected to the floating diffuser FD of the pixel unit 100 that detects light of the same color. In other words, the connection portion 250 can connect multiple pixel units 100 that contain a color filter 104 of the same color. In this way, the floating diffuser FD can be shared among multiple pixel units 100 that detect light of the same color. More specifically, in Figure 5 In the example shown, four pixel units 100 that detect the same color light are electrically connected via a connection part 250.

[0069] Furthermore, in this embodiment, the imaging device 10 can be made compact by employing a stacked structure. For example, in Figure 6 In the example shown, a substrate 60 with the aforementioned peripheral circuitry, a substrate 50 with the aforementioned pixel transistors, and a semiconductor substrate 15 with photodiodes PD1 and PD2, etc., are stacked together. Furthermore, a connection portion 250 formed by wiring, etc., can be provided on the substrate 50. Note that in... Figure 6 In the example shown, the above-mentioned Figure 5 Photodiodes PD1 and PD2, as shown, are disposed on the semiconductor substrate 15. However, in this embodiment, the form of photodiodes PD1 and PD2 disposed on the semiconductor substrate 15 is not limited to... Figure 5 The example shown, and for example, could be Figure 4 As shown in the figure.

[0070] Furthermore, in this embodiment, the substrate 50 is not limited to having all the pixel transistors disposed thereon, and at least some of the pixel transistors need to be disposed thereon. The remaining pixel transistors may be disposed on the substrate 60 or the semiconductor substrate 15, etc. Additionally, if the connection portion 250 includes a transistor (as described later), then that transistor may be disposed on the substrate 50, etc. In this embodiment, the imaging device 10 is not limited to a stacked structure of three substrates, and may be a stacked structure of two or more substrates or may be composed of a single substrate.

[0071] As described above, in this embodiment, multiple pixel units 100 that detect the same color light are connected via a connection portion 250, thereby sharing a floating diffuser FD among the multiple pixel units 100. In this way, in this embodiment, the pixel signals of the multiple pixel units 100 can be added while maintaining color reproducibility. Therefore, according to this embodiment, since the pixel signals can be added, improvements in readout and processing speeds, reductions in power consumption, and suppression of data rate increases can be achieved without reducing the number of pixel units 100. Furthermore, according to this embodiment, since the pixel signals output from the multiple pixel units 100 connected via the connection portion 250 are added, the signal-to-noise ratio (S / N ratio) of the final output signal of the imaging device 10 can be improved.

[0072] Note that the construction of the pixel unit 100 and the imaging device 10 according to this embodiment is not limited to... Figures 4 to 6 The example shown.

[0073] 4. Second Embodiment Next, we will refer to Figure 7A and Figure 7B The second embodiment of this disclosure is described below. Figure 7A This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to this embodiment, and Figure 7B This is an explanatory diagram showing an example of the planar structure of the main components of the pixel unit 100 according to this embodiment.

[0074] In the first embodiment described above, among the plurality of pixel units 100 arranged in a Bayer array, four pixel units 100 that are not adjacent to each other on the semiconductor substrate 15 and detect the same color light are electrically connected by a connection portion 250. However, in this disclosure, the combination of the plurality of pixel units 100 connected by the connection portion 250 is not limited to this form. Here, in this embodiment, a variation of the plurality of pixel units 100 connected by the connection portion 250 will be described.

[0075] exist Figure 7A In the example shown, for instance, as in the first embodiment, pixel units 100 comprising pairs of photodiodes PD1 and PD2 arranged adjacent to each other and detecting the same color of light are arranged in a two-dimensional Bayer array. Furthermore, four pixel units 100 arranged adjacent to each other on the semiconductor substrate 15 and detecting different colors of light are electrically connected to each other via connection portions 250. In other words, the plurality of pixel units 100 connected via connection portions 250 include color filters 104 of different colors. In this embodiment, the number of pixel units 100 connected via connection portions 250 is not particularly limited, as long as there are two or more.

[0076] As described above, in this embodiment, multiple pixel units 100 that detect different colors of light are connected via a connecting portion 250, thereby allowing multiple pixel units 100 to share a floating diffuser FD. In this way, since the shape of the connecting portion 250 can be simplified and shortened in this embodiment, the pixel signals of multiple pixel units 100 can be added while facilitating manufacturing and suppressing increases in wiring resistance, etc. Therefore, according to this embodiment, since the pixel signals can be added, improvements in readout and processing speeds, reductions in power consumption, and suppression of data rate increases can be achieved without reducing the number of pixel units 100. Furthermore, according to this embodiment, since the pixel signals output from the multiple pixel units 100 connected via the connecting portion 250 are added, the signal-to-noise ratio (S / N ratio) of the signal finally output from the imaging device 10 can be improved. In this embodiment, since the multiple pixel units 100 that detect different colors of light are interconnected, the color reproduction is worse than in the first embodiment, but it can be effective in applications where sensitivity is more important than color reproduction, such as image monitoring in dark environments.

[0077] Next, I will explain Figure 7B The example shown. In Figure 7B In the example shown, along the row direction ( Figure 7B Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 7B Four pixel units 100 arranged in two columns (in the Y direction) include color filters 104 of the same color. Then, multiple units are arranged in a Bayer array, treating these four pixel units 100 as a single unit. Note that a Bayer array arranging four pixel units 100 as a single unit is called a quad Bayer array. Furthermore, four pixel units 100 disposed adjacent to each other on the semiconductor substrate 15 and detecting light of the same color are electrically connected to each other via a connection portion 250. In other words, multiple pixel units 100 connected via the connection portion 250 include color filters 104 of the same color. In this embodiment, the number of pixel units 100 connected via the connection portion 250 is not particularly limited, as long as there are two or more.

[0078] As described above, in this embodiment, in the quad Bayer array, multiple pixel units 100 arranged adjacent to each other and detecting the same color light are connected by a connecting portion 250, so that multiple pixels 100 share a floating diffuser FD. In this way, in this embodiment, since the form of the connecting portion 250 can be simplified and shortened, the pixel signals of multiple pixel units 100 can be added while facilitating manufacturing and suppressing the increase in wiring resistance, etc. Furthermore, according to this embodiment, since the pixel signals can be added while maintaining color reproducibility, it is possible to improve readout and processing speed, reduce power consumption, and suppress the increase in data rate without reducing the number of pixel units 100. In addition, according to this embodiment, since the pixel signals output from the multiple pixel units 100 connected by the connecting portion 250 are added, the S / N ratio of the pixel signal finally output from the imaging device 10 can be improved.

[0079] Note that the construction of the pixel unit 100 according to this embodiment is not limited to... Figure 7A and Figure 7B The example shown.

[0080] 5. Third embodiment Next, the following will refer to Figures 8A to 12B The third embodiment of this disclosure is described below. Figure 8A , Figure 9A , Figure 10A , Figure 11A and Figure 1 Figure A is an explanatory diagram showing a planar construction example of the main components of the pixel unit 100 according to this embodiment. In these figures, only the connection portion 250 connecting the plurality of pixel units 100 for detecting red light is shown, and the illustration of the connection portion 250 connecting the plurality of pixel units 100 for detecting other colors of light is omitted. Furthermore, Figure 8B , Figure 9B , Figure 10B , Figure 11B and Figure 12B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to this embodiment.

[0081] In the first and second embodiments described above, four pixel units 100 arranged in two rows along the row direction (X direction in the figure) and two columns along the column direction (Y direction in the figure) are electrically connected by the connecting portion 250. However, in this disclosure, the number and arrangement of the plurality of pixel units 100 connected by the connecting portion 250 are not limited to this form. In view of this, in this embodiment, variations in the number and arrangement of the plurality of pixel units 100 connected by the connecting portion 250 will be described.

[0082] For example, in Figure 8AIn the example shown, as in the first embodiment, the plurality of pixel units 100 are arranged, for example, in a two-dimensional Bayer array. Furthermore, in Figure 8A In the example shown, they are spaced apart from each other along the row direction ( Figure 8A Arranged in a row along the X direction and along the column direction (in the X direction) Figure 8A Two red light-detecting pixel units 100 arranged in two columns (in the Y direction) are connected to each other via a connecting portion 250. As described above, in this embodiment, two red light-detecting pixel units 100 arranged in one row and two columns on the semiconductor substrate 15 are connected to each other via a connecting portion 250, so that the floating diffuser FD can be shared between the two pixel units 100.

[0083] Figure 8A The structure of the pixel unit 100 connected by the connecting portion 250 shown can be illustrated as follows: Figure 8B The equivalent circuit shown.

[0084] As described above, the pixel unit 100 according to this embodiment has a sub-pixel structure. Specifically, as in the comparative example, the pixel unit 100 includes photodiodes (photoelectric conversion units) PD1 and PD2. The pixel unit 100 includes, for example, transistors AMP, FCG, FDG, RST, SEL, TGL, and TGS as pixel transistors. The pixel unit 100 also includes a capacitor element FC and a floating diffusion unit (charge accumulation unit) FD. Figure 8B In the example shown, transistors AMP, FCG, FDG, RST, SEL, TGL, and TGS are n-type MOS transistors.

[0085] Then, as in the comparative example, in this embodiment, the light-receiving area of ​​photodiode (first photoelectric conversion unit) PD1 is larger than the light-receiving area of ​​photodiode (second photoelectric conversion unit) PD2. Therefore, the light-receiving sensitivity of photodiode PD1 is higher than that of photodiode PD2.

[0086] Furthermore, as in the comparative example, in this embodiment, such as Figure 8B As shown, the anode of photodiode PD1 is grounded, and the cathode of photodiode PD1 is electrically connected to one of the source and drain of transistor TGL. Furthermore, the anode of photodiode PD2 is grounded, and the cathode of photodiode PD2 is electrically connected to one of the source and drain of transistor TGS.

[0087] Furthermore, the gate of transistor (first transmission transistor) TGL is connected to control line TGLL (not shown), one of the source and drain of transistor TGL is electrically connected to the cathode of photodiode PD1, and the other of the source and drain of transistor TGL is electrically connected to floating diffusion section FD.

[0088] Furthermore, the floating diffuser FD accumulates charge from photodiodes PD1 and PD2, and in Figure 8B The floating diffuser FD is illustrated using the symbol for a capacitor element.

[0089] Furthermore, the floating diffuser FD is electrically connected to the gate of the transistor (amplifier transistor) AMP. Additionally, one of the source and drain of the transistor AMP is electrically connected to one of the source and drain of the transistor (selector transistor) SEL. The other of the source and drain of the transistor AMP is electrically connected to the power supply circuit (power supply potential VDD).

[0090] Furthermore, the other of the source and drain of transistor SEL is electrically connected to the aforementioned signal line SGL, and is also electrically connected to the aforementioned column signal processing circuit section 34. Additionally, the gate of transistor SEL is electrically connected to the select line SELL (not shown), and is also electrically connected to the aforementioned vertical drive circuit section 35.

[0091] In addition, such as Figure 8B As shown, the floating diffusion section FD is electrically connected to one of the drain and source terminals of the transistor (reset transistor) RST via the transistor FDG. The gate of the transistor RST is electrically connected to the reset signal line RSTL (not shown) and also to the aforementioned vertical drive circuit section 35. Furthermore, the other of the drain and source terminals of the transistor RST is electrically connected to the power supply circuit (power supply potential VDD).

[0092] Furthermore, one of the source and drain of transistor (second transfer transistor) TGS is electrically connected to the cathode of photodiode PD2, and the gate of transistor TGS is connected to control line TGSL (not shown). Additionally, the other of the source and drain of transistor TGS is electrically connected to one end of capacitor element FC and one of the source and drain of transistor FCG.

[0093] One end of capacitor FC is electrically connected to the other of the source and drain of transistor TGS and one of the source and drain of transistor FCG, and one end of capacitor FC is electrically connected to the power supply circuit (power supply potential VDD).

[0094] Furthermore, the gate of transistor FCG (capacitor-connected transistor) is connected to control line FCGL (not shown), and one of the source and drain of transistor FCG is electrically connected to one end of capacitor element FC and the other of the source and drain of transistor TGS. Additionally, the other of the source and drain of transistor FCG is electrically connected to one of the source and drain of transistor RST and one of the source and drain of transistor FDG.

[0095] The gate of transistor (switching transistor) FDG is connected to the control line FDGL. One of the source and drain of transistor FDG is electrically connected to one of the source and drain of transistor RST and the other of the source and drain of transistor FCG. The other of the source and drain of transistor FDG is electrically connected to the floating diffuser FD.

[0096] In addition, such as Figure 8B As shown, in pixel unit 100, two photodiodes PD1 and PD2 are electrically connected via node ND and through at least one of the plurality of pixel transistors included in pixel unit 100. For example, as Figure 8B As shown, node ND is located between transistor RST and transistor FDG.

[0097] Furthermore, in this embodiment, the connection portion 250 is electrically connected to the node ND of each pixel unit 100, thereby electrically connecting the pixel unit 100. In this embodiment, the connection portion 250 may include one or more connection transistors FDL. For example, in Figure 8B In the example shown, the connection portion 250 includes a connection transistor FDL, and the connection transistor FDL is an n-type MOS transistor. Figure 8B In the example shown, by controlling the connection transistor FDL, the individual pixel signals of the multiple pixel units 100 connected through the connection section 250 can be read.

[0098] In this embodiment, the nodes directly electrically connected via the connection portion 250 are preferably nodes that are not directly connected to the photodiode PD1 and are far away from the photodiode PD1, for example... Figure 8BThe node ND is shown. As described above, photodiode PD1 is an imaging element that can image the object even in low light conditions. If the connection transistor FDL of connection portion 250 is directly connected to photodiode PD1, the noise of connection transistor FDL is superimposed on the pixel signal from photodiode PD1. Therefore, in imaging objects in low light conditions where photodiode PD1 is mainly used, the S / N ratio of the pixel signal deteriorates. Therefore, in this embodiment, the node directly electrically connected by connection portion 250 is preferably a node that is not directly connected to photodiode PD1 and is far away from photodiode PD1. On the other hand, in this embodiment, the node directly electrically connected by connection portion 250 is preferably located closer to photodiode PD2 than to photodiode PD1. In other words, in this embodiment, for example, the routing length of the wiring between photodiode PD1 and node ND can be shorter than the routing length of the wiring between photodiode PD1 and node ND. For example, even when the connection transistor FDL of the connection portion 250 is electrically connected to the node, and the noise of the connection transistor FDL is superimposed on the pixel signal from the photodiode PD2, the impact of noise on the pixel signal is smaller compared to the above situation when the photodiode PD2 is mainly used for imaging high-illuminance objects. Therefore, in this embodiment, the node directly electrically connected to the connection portion 250 can be located closer to the photodiode PD2 than to the photodiode PD1.

[0099] Note that in this embodiment, the nodes that are directly electrically connected by the connecting part 250 are preferably of the form described above, but are not limited to the form described above, depending on the required specifications of the imaging device 10.

[0100] In addition, for example, in Figure 9A In the example shown, multiple pixel units 100 are arranged in a two-dimensional Bayer array. Furthermore, in Figure 9A In the example shown, red light is detected and spaced apart from each other along the row direction ( Figure 9A Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 9A Two pixel units 100 arranged in a row (in the Y direction) are connected to each other via a connecting portion 250. As described above, in this embodiment, two pixel units 100 arranged in two rows and one column on the semiconductor substrate 15 and detecting red light are connected to each other via a connecting portion 250, so that the floating diffuser FD can be shared between the two pixel units 100.

[0101] also, Figure 9A The structure of the pixel unit 100 connected by the connecting portion 250 shown can be illustrated as follows: Figure 9B The equivalent circuit is shown. Note that the equivalent circuit of pixel unit 100 is the same as... Figure 8B The equivalent circuit shown is the same, therefore its description is omitted here. Figure 9B In the example shown, the connection portion 250 may include two connection transistors FDL respectively disposed for the pixel unit 100. Furthermore, in Figure 9B In the example shown, by controlling each connection transistor FDL, the individual pixel signals of the multiple pixel units 100 connected through the connection section 250 can be read out.

[0102] In addition, for example, in Figure 10A In the example shown, multiple pixel units 100 are arranged in a two-dimensional Bayer array. Furthermore, in Figure 10A In the example shown, red light is detected and spaced apart from each other along the row direction ( Figure 10A Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 10A Four pixel units 100 arranged in two columns (in the Y direction) are interconnected by a connecting portion 250. As described above, in this embodiment, four pixel units 100 arranged in two rows and two columns on the semiconductor substrate 15 and detecting red light are interconnected by a connecting portion 250, so that the floating diffuser FD can be shared among the four pixel units 100.

[0103] Figure 10A The structure of the pixel unit 100 connected by the connecting portion 250 shown can be illustrated as follows: Figure 10B The equivalent circuit is shown. Note that the equivalent circuit of pixel unit 100 is the same as... Figure 8B The equivalent circuit shown is the same, therefore its description is omitted here. Figure 10B In the example shown, the connection portion 250 may include four connection transistors FDL, each disposed for a pixel unit 100. Furthermore, in Figure 10B In the example shown, by controlling each connection transistor FDL, the individual pixel signals of the multiple pixel units 100 connected through the connection section 250 can be read out.

[0104] In addition, for example, in Figure 11A In the example shown, in addition, Figure 11A In the example shown, red light is detected and spaced apart from each other along the row direction ( Figure 11A Arranged in three rows (in the X direction) and along the column direction ( Figure 11A Nine pixel units 100 arranged in three columns (in the Y direction) are interconnected by a connecting portion 250. As described above, in this embodiment, nine pixel units 100 arranged in three rows and three columns on the semiconductor substrate 15 and detecting red light are interconnected by a connecting portion 250, so that the floating diffusion portion FD can be shared among the nine pixel units 100.

[0105] Figure 11A The structure of the pixel unit 100 connected by the connecting portion 250 shown can be illustrated as follows: Figure 11B The equivalent circuit is shown. Note that the equivalent circuit of pixel unit 100 is the same as... Figure 8B The equivalent circuit shown is the same, therefore its description is omitted here. Figure 11B In the example shown, the connection portion 250 may include nine connection transistors FDL, each disposed for a pixel unit 100. Furthermore, in Figure 11B In the example shown, by controlling each connection transistor FDL, the individual pixel signals of the multiple pixel units 100 connected through the connection section 250 can be read out.

[0106] Additionally, for example, in Figure 12A In the example shown, red light is detected and spaced apart from each other along the row direction ( Figure 12A Arranged in four rows (in the X direction) and along the column direction (in the X direction) Figure 12A Sixteen pixel units 100 arranged in four columns (in the Y direction) are interconnected by a connecting portion 250. As described above, in this embodiment, nine pixel units 100 arranged in four rows and four columns on the semiconductor substrate 15 and detecting red light are interconnected by a connecting portion 250, so that the floating diffusion portion FD can be shared among the sixteen pixel units 100.

[0107] Figure 12A The structure of the pixel unit 100 connected by the connecting portion 250 can be shown as follows: Figure 12B The equivalent circuit is shown. Note that the equivalent circuit of pixel unit 100 is the same as... Figure 8B The equivalent circuit shown is the same, therefore its description is omitted here. Figure 12B In the example shown, the connection portion 250 may include sixteen connection transistors FDL, each disposed for a pixel unit 100. Furthermore, in Figure 12B In the example shown, by controlling each connection transistor FDL, the individual pixel signals of the multiple pixel units 100 connected through the connection section 250 can be read out.

[0108] Note that the structure and circuit configuration of the pixel unit 100 according to this embodiment are not limited to... Figures 8A to 12B The example shown. In this embodiment, for example, a number of pixel units 100 other than the number described above can be connected by the connecting portion 250, or pixel units 100 arranged in an array other than the array described above can be connected by the connecting portion 250.

[0109] 6. Fourth Embodiment Next, we will refer to Figure 13A and Figure 13B The fourth embodiment of this disclosure is described below. Figure 13A and Figure 13B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to this embodiment.

[0110] In the third embodiment described above, the connection portion 250 includes connection transistors FDL respectively provided for each pixel unit 100, wherein the number of connection transistors FDL is the same as the number of pixel units 100. However, in this disclosure, the number of connection transistors FDL included in the connection portion 250 is not limited to this form. Therefore, in this embodiment, variations in the number of connection transistors FDL included in the connection portion 250 will be described.

[0111] For example, in Figure 13A In the example shown, the connector 250 is electrically connected along the row direction ( Figure 13A Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 13A The four pixel units 100 (arranged in two columns along the Y direction) are for detecting the same color light. Specifically, the connection section 250 includes a connection transistor FDL, and the connection transistor FDL is only disposed between pixel units 100 located in different rows. Figure 13A In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same row at different timings.

[0112] In addition, for example, in Figure 13B In the example shown, the connector 250 is electrically connected along the row direction ( Figure 13B Arranged in three rows (in the X direction) and along the column direction ( Figure 13B Nine pixel units 100 (arranged in three columns along the Y direction) detect the same color of light. Specifically, the connection section 250 includes two connection transistors FDL, and the connection transistors FDL are only disposed between pixel units 100 located in different rows. Furthermore, in Figure 13B In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same row at different timings.

[0113] Note that the circuit structure of the pixel unit 100 according to this embodiment is not limited to... Figure 13A and Figure 13B As shown in the example, and for example, the connection portion 250 can electrically connect sixteen pixel units 100 arranged in four rows along the row direction and four columns along the column direction, and which detect the same color light. In this case, the connection portion 250 may include three connection transistors FDL, and the connection transistors FDL may be disposed only between pixel units 100 located in different rows.

[0114] 7. Fifth Embodiment Next, we will refer to Figure 14Aand Figure 14B The fifth embodiment of this disclosure is described below. Figure 14A and Figure 14B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to this embodiment. In this embodiment, a variation on the number of connection transistors FDL included in the connection portion 250 will be described.

[0115] For example, in Figure 14A In the example shown, the connector 250 is electrically connected along the row direction ( Figure 14A Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 14A The four pixel units 100 (arranged in two columns along the Y direction) are for detecting the same color light. Specifically, the connection section 250 includes a connection transistor FDL, and the connection transistor FDL is only disposed between pixel units 100 located in different columns. Furthermore, in Figure 14A In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same column at different timings.

[0116] For example, in Figure 14B In the example shown, the connector 250 is electrically connected along the row direction ( Figure 14B Arranged in three rows (in the X direction) and along the column direction ( Figure 14B Nine pixel units 100 (arranged in three columns along the Y direction) detect the same color of light. Specifically, the connection section 250 includes two connection transistors FDL, and the connection transistors FDL are only disposed between pixel units 100 located in different columns. Furthermore, in Figure 14B In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same column at different timings.

[0117] Note that the circuit structure of the pixel unit 100 according to this embodiment is not limited to... Figure 14A and Figure 14B As shown in the example, and for example, the connection portion 250 may electrically connect sixteen pixel units 100 arranged in four rows along the row direction and four columns along the column direction, and which detect the same color light. In this case, the connection portion 250 may include three connection transistors FDL, and the connection transistors FDL may be disposed only between pixel units 100 located in different columns. Furthermore, in embodiments of this disclosure, the number and position of the connection transistors FDL are not limited to the number and position described in the fourth and fifth embodiments, and various forms may be selected according to the readout control of the pixel units 100.

[0118] 8. Sixth Embodiment Next, we will refer to Figure 15A and Figure 15B The sixth embodiment of this disclosure is described below. Figure 15A and 15B This is an equivalent circuit diagram of the main components of the pixel unit 100 according to this embodiment.

[0119] In the third to fifth embodiments described above, the connection portion 250 includes a connection transistor FDL. However, this disclosure is not limited to the configuration in which the connection portion 250 includes a connection transistor FDL. Here, in this embodiment, a form in which the connection portion 250 does not include a connection transistor FDL will be described.

[0120] For example, in Figure 15A In the example shown, the connector 250 is electrically connected along the row direction ( Figure 15A Arranged in two rows (in the X direction) and along the column direction (in the X direction) Figure 15A Four pixel units 100 (arranged in two columns along the Y direction) are used to detect light of the same color. Specifically, in Figure 15A In the configuration shown, the connection portion 250 does not include the connection transistor FDL. Figure 15A In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same column and between the pixel units 100 located in the same row at different timings.

[0121] In addition, for example, in Figure 15B In the example shown, the connector 250 is electrically connected along the row direction ( Figure 15B Arranged in three rows (in the X direction) and along the column direction ( Figure 15B Nine pixel units 100 (arranged in three columns along the Y direction) are used to detect light of the same color. Specifically, in Figure 15B In the configuration shown, the connection portion 250 does not include the connection transistor FDL. Figure 15B In the example shown, the individual pixel signals of the multiple pixel units 100 connected by the connection part 250 can be read out by reading out the pixel signals between the pixel units 100 located in the same column and between the pixel units 100 located in the same row at different timings.

[0122] Note that the circuit structure of the pixel unit 100 according to this embodiment is not limited to... Figure 15A and Figure 15B As shown in the example, and for example, the connection portion 250 can electrically connect sixteen pixel units 100 arranged in four rows along the row direction and four columns along the column direction, and which detect the same color light. In this case, the connection portion 250 may not include the connection transistor FDL.

[0123] 9. Summary As described above, in each embodiment of this disclosure, multiple pixel units 100 are interconnected via connection portions 250, thereby allowing the floating diffuser FD to be shared among the multiple pixel units 100. In this manner, in this embodiment, the pixel signals of the multiple pixel units 100 can be added together. Therefore, according to this embodiment, since the pixel signals can be added together, improvements in readout and processing speeds, reductions in power consumption, and suppression of data rate increases can be achieved without reducing the number of pixel units 100. Furthermore, according to this embodiment, since the pixel signals output from the multiple pixel units 100 connected via connection portions 250 are added together, the signal-to-noise ratio (S / N ratio) of the signal finally output from the imaging device 10 can be improved.

[0124] Furthermore, in the above embodiments of this disclosure, the application of this disclosure to a back-illuminated complementary MOS (CMOS) image sensor structure has been described, but the embodiments of the present invention are not limited thereto and can be applied to other structures.

[0125] Note that in the above embodiments of this disclosure, a photodiode (PD) with an n-type first conductivity type, a p-type second conductivity type, and using electrons as signal charges has been described. However, the embodiments of this disclosure are not limited to this example. For instance, this embodiment can be applied to a photodiode (PD) with a p-type first conductivity type, an n-type second conductivity type, and using holes as signal charges.

[0126] Furthermore, in the embodiments described above in this disclosure, the semiconductor substrate 15 is not necessarily a silicon substrate, and may be other substrates (e.g., silicon-on-insulator (SOI) substrates or SiGe substrates, etc.). Additionally, the semiconductor substrate 15 may be any of various substrates on which semiconductor structures are formed.

[0127] Furthermore, the imaging apparatus 10 according to embodiments of this disclosure is not limited to an imaging apparatus that detects the light quantity distribution of incident light as visible light and images such distribution as an image. Moreover, this embodiment can also be applied to imaging apparatuses that images the light quantity distribution of incident light such as infrared rays, X-rays, or particles, or to imaging apparatuses (physical quantity distribution detection apparatuses) that detect the distribution of other physical quantities such as pressure or electrostatic capacitance and images such distribution as an image, such as fingerprint detection sensors.

[0128] Furthermore, in this embodiment, the imaging fabrication can be performed using methods, equipment, and conditions for manufacturing general semiconductor devices. In other words, in this embodiment, existing semiconductor device manufacturing processes can be used.

[0129] Note that examples of the methods mentioned above include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Examples of PVD methods include vacuum deposition, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, electron cyclotron resonance (ECR) sputtering, directed target sputtering, high-frequency sputtering, etc.), ion plating, laser beam ablation, molecular epitaxy (MBE), and laser transmission. Furthermore, examples of CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and photoCVD. In addition, examples of other methods include electroplating, electroless plating, spin coating, dip coating, casting, microcontact printing, drop casting, various printing methods (e.g., screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing), embossing, spraying, and various coating methods (e.g., air blade coating, doctor blade coating, bar coating, doctor blade coating, extrusion coating, reverse roller coating, transfer roller coating, gravure coating, kiss coating, casting coating, spraying, slotted hole coating, and calendering coating). Furthermore, examples of patterning methods include chemical etching such as shadow masking, laser transfer, and photolithography, as well as physical etching using ultraviolet light, lasers, etc. Additionally, examples of planarization techniques include chemical mechanical polishing (CMP), laser planarization, and reflow.

[0130] 10. Application Examples 10.1 Application Examples on Cameras The technology disclosed herein (the technology) can also be applied to various products. For example, the technology disclosed herein can be applied to cameras, etc. Reference will be made herein. Figure 16 This section describes a construction example of a camera 700, which is an electronic device using this technology. Figure 16 This is an explanatory diagram illustrating a schematic functional construction example of a camera 700 to which the technology (the present technology) can be applied.

[0131] like Figure 16As shown, the camera 700 includes an imaging device 702, an optical lens 710, a shutter mechanism 712, a drive circuit unit 714, and a signal processing circuit unit 716. The optical lens 710 captures image light (incident light) from the object being imaged and forms an image on the imaging surface of the imaging device 702. Therefore, signal charge accumulates in the pixel units 100 of the imaging device 702 for a certain period of time. The shutter mechanism 712 controls the illumination period and the shading period of the imaging device 702 by opening and closing. The drive circuit unit 714 provides drive signals to the imaging device 702 and the shutter mechanism 712, etc., for controlling the signal transmission operation of the imaging device 702 and the shutter operation of the shutter mechanism 712, etc. That is, the imaging device 702 performs signal transmission based on the drive signals (timing signals) provided from the drive circuit unit 714. The signal processing circuit unit 716 performs various signal processing operations. For example, the signal processing circuit unit 716 outputs the processed video signal to a storage medium such as a memory (not shown), or outputs the video signal to a display unit (not shown).

[0132] Specifically, for example, the technology disclosed herein can be applied to imaging device 702.

[0133] The above describes a construction example of camera 700. Each of the above components can be made of general-purpose parts, or it can be made of hardware specifically designed to implement the function of each component. This construction can be appropriately modified according to the level of technology available at the time of implementation.

[0134] 10.2 Examples of applications on smartphones For example, the technology according to this disclosure can be applied to smartphones, etc. Reference will be made herein. Figure 17 This section describes a construction example of a smartphone 900, which is an electronic device using this technology. Figure 17 This is a block diagram illustrating a schematic example of the functional construction of a smartphone 900 to which the technology (the present technology) can be applied.

[0135] like Figure 17 As shown, the smartphone 900 includes a central processing unit (CPU) 901, a read-only memory (ROM) 902, and a random access memory (RAM) 903. The smartphone 900 also includes a storage device 904, a communication module 905, and a sensor module 907. Furthermore, the smartphone 900 includes an imaging device 909, a display device 910, a speaker 911, a microphone 912, an input device 913, and a bus 914. Additionally, the smartphone 900 may include processing circuitry, such as a digital signal processor (DSP), to replace or supplement the CPU 901.

[0136] The CPU 901 functions as an arithmetic processing and control unit, controlling all or part of the operation of the smartphone 900 according to various programs recorded in the ROM 902, RAM 903, or storage device 904. The ROM 902 stores the programs and processing parameters to be used by the CPU 901. The RAM 903 temporarily stores the programs used by the CPU 901 during execution or parameters that change appropriately during execution. The CPU 901, ROM 902, and RAM 903 are interconnected via a bus 914. Furthermore, the storage device 904 is a data storage device constructed as an example of the storage section of the smartphone 900. The storage device 904 may be composed of, for example, a magnetic storage device such as a hard disk drive (HDD), a semiconductor storage device, or an optical storage device. The storage device 904 stores the programs executed by the CPU 901, various data, and various data acquired from external sources.

[0137] Communication module 905 is, for example, a communication interface comprised of communication devices for connecting to communication network 906. Communication module 905 can be, for example, a communication card for wired or wireless local area networks (LANs), Bluetooth (registered trademark), or Wireless USB (WUSB). Furthermore, communication module 905 can be a router for optical communication, a router for asymmetric digital subscriber line (ADSL), or a modem for various communications. Communication module 905 uses predetermined protocols such as Transmission Control Protocol / Internet Protocol (TCP / IP) to send / receive signals to / from, for example, the Internet or other communication devices. Communication network 906 connected to communication module 905 is a network connected in a wired or wireless manner, and is, for example, the Internet, a home LAN, infrared communication, or satellite communication.

[0138] The sensor module 907 includes any of a variety of sensors such as motion sensors (e.g., accelerometers, gyroscopes, or geomagnetic sensors), biometric sensors (e.g., pulse sensors, blood pressure sensors, or fingerprint sensors), and position sensors (e.g., Global Navigation Satellite System (GNSS) receivers).

[0139] An imaging device 909 is disposed on the front surface of a smartphone 900 and can image objects located in front of or behind the smartphone 900. Specifically, the imaging device 909 may include an imaging element (not shown) such as a complementary MOS (CMOS) image sensor to which the technology according to this disclosure (this technology) can be applied, and a signal processing circuit (not shown) that performs imaging signal processing on the signal obtained by photoelectric conversion through the imaging element. Furthermore, the imaging device 909 may also include an optical system mechanism (not shown) including an imaging lens, a zoom lens, or a focusing lens, and a drive system mechanism (not shown) for controlling the operation of the optical system mechanism. The imaging element converges incident light from the object into an optical image, and the signal processing circuit can perform photoelectric conversion on the formed optical image at the pixel level, read out the signal of each upward-facing imaging signal, and perform image processing to obtain an image.

[0140] The display device 910 is disposed on the front surface of the smartphone 900, and may be a display device such as a liquid crystal display (LCD) or an organic electroluminescent display (EL). The display device 910 may display an operation screen and an image acquired by the imaging device 909.

[0141] For example, the speaker 911 can output voice and accompanying sound of the video content displayed by the display device 910 to the user.

[0142] For example, microphone 912 can collect the user's voice during calls, including the sound of commands used to activate functions of smartphone 900, as well as sounds from the environment surrounding smartphone 900.

[0143] Input device 913 is, for example, a user-operated device such as a button, keyboard, touch panel, or mouse. Input device 913 includes input control circuitry that generates input signals based on user input and outputs these signals to CPU 901. By operating input device 913, the user can input various data into smartphone 900 or instruct smartphone 900 to perform processing operations.

[0144] Specifically, for example, the technology disclosed herein can be applied to imaging device 909.

[0145] The above illustrates a construction example of a smartphone 900. Each of the aforementioned components can be made up of general-purpose parts, or it can be made up of hardware specifically designed to implement the function of each component. This construction can be appropriately modified according to the level of technology available at the time of implementation.

[0146] 10.3 Application Examples on Moving Bodies The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device mounted on any type of mobile body; the mobile body is, for example, a vehicle, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

[0147] Figure 18 This is a block diagram illustrating a schematic construction example of a vehicle control system, which is an example of a mobile body control system to which the technology according to embodiments of the present disclosure can be applied.

[0148] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 18 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as functional components of the integrated control unit 12050.

[0149] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is used as a control device for devices such as: a drive force generating device (e.g., an internal combustion engine, drive motor, etc.) for generating vehicle driving force, a drive force transmission mechanism for transmitting driving force to the wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating vehicle braking force.

[0150] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 serves as a control device for devices such as keyless entry systems, smart key systems, power windows, or various lights such as headlights, reversing lights, brake lights, turn signals, or fog lights. In this case, radio waves or signals from various switches transmitted from a portable device that serves as a key alternative can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locking devices, power windows, or lights, etc.

[0151] The exterior information detection unit 12030 detects information about the exterior of the vehicle, including the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to the imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to image the exterior of the vehicle and receives the image. Based on the received image, the exterior information detection unit 12030 can perform processing for detecting objects such as people, vehicles, obstacles, signs, or characters on the road surface, or processing for detecting their distance.

[0152] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output an electrical signal as an image or an electrical signal as distance measurement information. Furthermore, the light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0153] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver state detection unit 12041 for detecting the driver's state. The driver state detection unit 12041 includes, for example, a camera for imaging the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or it can determine whether the driver is dozing off.

[0154] The microcomputer 12051 can calculate target control values ​​for the drive force generating device, steering mechanism, or braking device based on information about the vehicle's interior and exterior obtained by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control to achieve functions of advanced driver assistance systems (ADAS), including collision avoidance or shock absorption, following distance-based driving, speed maintenance driving, collision warning, or lane departure warning.

[0155] In addition, based on the environmental information about the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform coordinated control for autonomous driving by controlling the drive force generating device, steering mechanism or braking device, etc., which enables the vehicle to drive automatically without relying on the driver's operation.

[0156] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12030 based on information about the vehicle's exterior obtained by the exterior information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control aimed at preventing glare by controlling the headlights to switch from high beams to low beams, for example, based on the position of the vehicle ahead or oncoming vehicle detected by the exterior information detection unit 12030.

[0157] The sound / image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying vehicle occupants or the outside of the vehicle. Figure 18 In the example, audio speaker 12061, display unit 12062, and instrument panel 12063 are shown as output devices. Display unit 12062 may include, for example, at least one of a vehicle display and a head-up display.

[0158] Figure 19 This is a diagram showing an example of the mounting position of the imaging unit 12031.

[0159] exist Figure 19 In the imaging unit 12031, there are imaging units 12101, 12102, 12103, 12104 and 12105.

[0160] Imaging units 12101, 12102, 12103, 12104, and 12105 are, for example, arranged in positions such as the front nose, rearview mirrors, rear bumper, rear door, and upper part of the interior windshield of vehicle 12100. Imaging unit 12101 at the front nose and imaging unit 12105 at the upper part of the interior windshield primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 at the rearview mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 at the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 at the upper part of the interior windshield is mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes ahead.

[0161] Notice, Figure 19 Examples of the imaging ranges of imaging units 12101 to 12104 are shown. Imaging range 12111 represents the imaging range of imaging unit 12101 located at the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 located at the rearview mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 located at the rear bumper or rear door. For example, a bird's-eye view image of vehicle 12100 is obtained by overlaying image data captured by imaging units 12101 to 12104.

[0162] At least one of the imaging units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0163] For example, the microcomputer 12051 can determine the distance and time-varying distance (relative speed to the vehicle 12100) of each three-dimensional object within the imaging range 12111 to 12114 based on distance information obtained from the imaging units 12101 to 12104, and extract the nearest three-dimensional object as the preceding vehicle, specifically existing on the driving path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). Furthermore, the microcomputer 12051 can pre-set a following distance to be maintained in front of the preceding vehicle and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. Therefore, coordinated control for autonomous driving can be performed, enabling the vehicle to drive automatically without relying on driver operation, etc.

[0164] For example, microcomputer 12051 can classify three-dimensional object data of three-dimensional objects into two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from imaging units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic obstacle avoidance. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that can be visually recognized by the driver of vehicle 12100 and obstacles that are difficult to visually recognize by the driver of vehicle 12100. Then, microcomputer 12051 determines a collision risk to indicate the risk of collision with each obstacle. If the collision risk is equal to or higher than a set value and therefore there is a possibility of collision, microcomputer 12051 outputs a warning to the driver through audio speaker 12061 or display unit 12062, and executes forced deceleration or evasive steering through driving system control unit 12010. Microcomputer 12051 can thus assist driving to avoid collisions.

[0165] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. This pedestrian identification is performed, for example, by extracting feature points from the images captured by the imaging units 12101 to 12104, which are infrared cameras; and by performing pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to overlay a square outline for emphasis on the identified pedestrian. In addition, the sound / image output unit 12052 can control the display unit 12062 to display icons or the like for indicating pedestrians at a desired location.

[0166] The above describes an example of a vehicle control system to which the technology according to this disclosure can be applied. In the above configuration, for example, the technology according to this disclosure can be applied to the imaging unit 12031.

[0167] 11. Supplement Although preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, the scope of the present disclosure is not limited to these examples. It will be apparent to those skilled in the art that various changes or modifications can be conceived within the scope of the technical concept set forth in the claims, and it should be understood that such changes or modifications naturally also fall within the scope of the present disclosure.

[0168] Furthermore, the effects described in this specification are illustrative or exemplary only and are not restrictive. That is, the technology according to this disclosure can exhibit other effects, together with or in lieu of the above effects, that would be apparent to those skilled in the art based on the description in this specification.

[0169] This technology can be constructed as described below. (1) An imaging device comprising: Multiple pixel units, each pixel unit including a first photoelectric conversion unit and a second photoelectric conversion unit with different light-receiving sensitivities, and a node disposed between the first photoelectric conversion unit and the second photoelectric conversion unit; and A connecting part that electrically connects the node of one pixel unit to the node of another pixel unit. (2) The imaging apparatus according to (1) above, wherein the plurality of pixel units electrically connected by the connecting portion share a charge accumulation portion, the charge accumulation portion being configured to accumulate the charge generated in the first photoelectric conversion portion and the second photoelectric conversion portion. (3) The imaging apparatus according to (2) above, wherein the connecting portion electrically connects a plurality of nodes of two or more of the pixel units. (4) The imaging device according to (3) above, wherein the plurality of pixel units are arranged in a matrix along the row and column directions on the semiconductor substrate. (5) The imaging device according to (4) above, wherein the connecting part connects the plurality of pixel units arranged in one row and two columns, two rows and one column, two rows and two columns, three rows and three columns or four rows and four columns. (6) The imaging apparatus according to (4) above, wherein the connection portion includes one or more connection transistors. (7) The imaging apparatus according to (6) above, wherein the connection transistor is provided for each of the plurality of pixel units electrically connected through the connection portion. (8) The imaging apparatus according to (6) above, wherein the connecting transistor is disposed between the pixel units located in different rows. (9) The imaging apparatus according to (6) above, wherein the connecting transistor is disposed between the pixel units located in different columns. (10) The imaging apparatus according to (2) or (3) above, wherein the plurality of pixel units electrically connected by the connecting portion include color filters of the same color. (11) The imaging apparatus according to (10) above, wherein the plurality of pixel units electrically connected by the connecting portion are disposed adjacent to each other on a semiconductor substrate. (12) The imaging apparatus according to (10) above, wherein the plurality of pixel units electrically connected by the connecting portion are not disposed adjacent to each other on the semiconductor substrate. (13) The imaging apparatus according to (2) or (3) above, wherein the plurality of pixel units electrically connected by the connecting portion include color filters of different colors. (14) An imaging apparatus according to any one of (2) to (13) above, wherein the light-receiving area of ​​the first photoelectric conversion unit is larger than the light-receiving area of ​​the second photoelectric conversion unit. (15) According to the imaging device described in (14) above, in a plan view, the light-receiving area of ​​the first photoelectric conversion unit has a generally octagonal shape, and the light-receiving area of ​​the second photoelectric conversion unit has a generally quadrilateral shape. (16) According to the imaging device described in (14) above, in a plan view, the light-receiving area of ​​the first photoelectric conversion unit has a generally L-shaped shape, and the light-receiving area of ​​the second photoelectric conversion unit has a generally quadrilateral shape. (17) The imaging apparatus according to any one of (2) to (16) above, wherein, Each pixel unit further includes a plurality of pixel transistors configured to drive the first photoelectric conversion unit and the second photoelectric conversion unit, and The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to the node through at least one of the plurality of pixel transistors. (18) The imaging device according to (17) above, wherein the node is located closer to the second photoelectric conversion unit than to the first photoelectric conversion unit. (19) The imaging apparatus according to (17) or (18) above, wherein, Each pixel unit includes the following elements as the plurality of pixel transistors. A first transfer transistor, electrically connected to a terminal of the first photoelectric conversion unit, is configured to transfer the charge to the charge accumulation unit. The second transmission transistor is electrically connected to a terminal of the second photoelectric conversion unit and is configured to transfer the charge to the charge accumulation unit. An amplifying transistor, electrically connected to the charge accumulation section, is configured to convert the charge from the charge accumulation section into a pixel signal. A selection transistor, electrically connected to the amplifying transistor, is configured to select the pixel signal to be output. A switching transistor, disposed between the first and second transmission transistors, is configured to switch the conversion efficiency of each pixel unit. A reset transistor, which is electrically connected to the charge accumulation section via the switching transistor, and is configured to reset the charge accumulation section. A capacitor element is disposed between the second transmission transistor and the reset transistor, and A capacitor-connected transistor is disposed between the capacitor element and the switching transistor, and is configured to control the connection with the capacitor element. The node is located between the reset transistor and the switching transistor. (20) An imaging apparatus according to any one of (17) to (19) above, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are disposed in different stacked layers with at least a portion of the pixel transistors among the plurality of pixel transistors. List of reference numerals

[0170] 10 Imaging Devices 15 Semiconductor substrate 33-pixel array 34-column signal processing circuit section 35 Vertical Drive Circuit Section 36 Horizontal Drive Circuit Section 38 Output Circuit Section 40 Control Circuit Section 42-pixel driving wiring 44 Vertical signal lines 46 Horizontal Signal Line 48 Input / Output Terminals 50, 60 substrate 100, 100a pixel unit 102 Photoelectric Conversion Zone 104 Color Filter 106 on-chip lenses 108 shading part 250 Connecting part AMP, FCG, FDG, RST, SEL, TGL, TGS transistors FC capacitor element FCGL, FDGL, TGLL, TGSL control lines FD floating diffuser FDL Connecting Transistors ND node PD, PD1, PD2 photodiodes RSTL reset signal line SELL Select Line SGL signal line VDD power supply potential

Claims

1. An imaging device comprising: Multiple pixel units, each pixel unit including a first photoelectric conversion unit and a second photoelectric conversion unit with different light-receiving sensitivities, and a node disposed between the first photoelectric conversion unit and the second photoelectric conversion unit; as well as A connecting part that electrically connects the node of one pixel unit to the node of another pixel unit.

2. The imaging device according to claim 1, wherein, The plurality of pixel units electrically connected by the connection portion share a charge accumulation portion, which is configured to accumulate the charge generated in the first photoelectric conversion portion and the second photoelectric conversion portion.

3. The imaging device according to claim 2, wherein, The connecting part electrically connects multiple nodes of two or more of the pixel units.

4. The imaging device according to claim 3, wherein, The plurality of pixel units are arranged in a matrix along the row and column directions on the semiconductor substrate.

5. The imaging apparatus according to claim 4, wherein, The connecting part connects the plurality of pixel units arranged in one row and two columns, two rows and one column, two rows and two columns, three rows and three columns, or four rows and four columns.

6. The imaging apparatus according to claim 4, wherein, The connection portion includes one or more connection transistors.

7. The imaging apparatus according to claim 6, wherein, The connection transistor is provided for each of the plurality of pixel units electrically connected through the connection portion.

8. The imaging apparatus according to claim 6, wherein, The connecting transistors are disposed between the pixel units located in different rows.

9. The imaging apparatus according to claim 6, wherein, The connecting transistors are disposed between the pixel units located in different columns.

10. The imaging apparatus according to claim 2, wherein, The plurality of pixel units electrically connected by the connecting portion include color filters of the same color.

11. The imaging apparatus according to claim 10, wherein, The plurality of pixel units electrically connected by the connecting portion are disposed adjacent to each other on the semiconductor substrate.

12. The imaging apparatus according to claim 10, wherein, The plurality of pixel units electrically connected by the connecting portion are disposed on the semiconductor substrate without being adjacent to each other.

13. The imaging apparatus according to claim 2, wherein, The plurality of pixel units electrically connected by the connecting part include color filters of different colors.

14. The imaging apparatus according to claim 2, wherein, The light-receiving area of ​​the first photoelectric conversion unit is larger than the light-receiving area of ​​the second photoelectric conversion unit.

15. The imaging apparatus according to claim 14, wherein, In the plan view, The light-receiving area of ​​the first photoelectric conversion unit has a generally octagonal shape, and The light-receiving area of ​​the second photoelectric conversion unit has a generally quadrilateral shape.

16. The imaging apparatus according to claim 14, wherein, In the plan view, The light-receiving area of ​​the first photoelectric conversion unit has a generally L-shaped shape, and The light receiving area of ​​the second photoelectric conversion unit has a generally quadrilateral shape.

17. The imaging apparatus according to claim 2, wherein, Each pixel unit further includes a plurality of pixel transistors configured to drive the first photoelectric conversion unit and the second photoelectric conversion unit, and The first photoelectric conversion unit and the second photoelectric conversion unit are electrically connected to the node through at least one of the plurality of pixel transistors.

18. The imaging apparatus according to claim 17, wherein, The node is positioned closer to the second photoelectric conversion unit than to the first photoelectric conversion unit.

19. The imaging apparatus according to claim 17, wherein, Each pixel unit includes the following elements as the plurality of pixel transistors. A first transfer transistor, electrically connected to a terminal of the first photoelectric conversion unit, is configured to transfer the charge to the charge accumulation unit. The second transmission transistor is electrically connected to a terminal of the second photoelectric conversion unit and is configured to transfer the charge to the charge accumulation unit. An amplifying transistor, electrically connected to the charge accumulation section, is configured to convert the charge from the charge accumulation section into a pixel signal. A selection transistor, electrically connected to the amplifying transistor, is configured to select the pixel signal to be output. A switching transistor, disposed between the first and second transmission transistors, is configured to switch the conversion efficiency of each pixel unit. A reset transistor, which is electrically connected to the charge accumulation section via the switching transistor, and is configured to reset the charge accumulation section. A capacitor element is disposed between the second transmission transistor and the reset transistor, and A capacitor-connected transistor is disposed between the capacitor element and the switching transistor, and is configured to control the connection with the capacitor element. The node is located between the reset transistor and the switching transistor.

20. The imaging apparatus according to claim 17, wherein, The first photoelectric conversion unit and the second photoelectric conversion unit are disposed in different stacked layers from at least a portion of the pixel transistors among the plurality of pixel transistors.

Images