Atomic layer deposition apparatus

Abstract

The application discloses an atomic layer deposition equipment, which comprises a reaction chamber, a reaction module and a heating module. The reaction chamber is provided with an inlet and an outlet at two ends respectively. The heating module is located in the reaction chamber and is arranged at one end of the reaction module facing the inlet and one end of the reaction module facing the outlet. The heating module can release heat. The areas close to the inlet and the outlet of the reaction chamber are heated by the heating module to overcome the defect that the temperature of the outlet area is relatively low due to fast heat dissipation, make up for the heat loss of the outlet area, and the heat released by the heating module can be transmitted to the substrate entering the reaction chamber, so that the temperature of each area of the substrate during the movement process is consistent, the uniformity of the film thickness of the substrate is improved, and the film forming quality is improved. And under the heating action of the heating module on the outlet area, the temperature of the outlet area is increased, and the process gas of the outlet area is not easy to condense with the movement of the substrate, so that the probability of the process gas forming powder particles to pollute the substrate is reduced.

Description

Technical Field

[0001] This invention relates to the field of atomic deposition technology, and more particularly to an atomic layer deposition apparatus. Background Technology

[0002] Atomic layer deposition (ALD) equipment typically includes a reaction module located inside a reaction chamber. The substrate enters and exits the reaction chamber at a certain speed through the inlet and outlet. The part of the reaction module near the inlet and outlet is connected to the external space, resulting in rapid heat dissipation and uneven temperature distribution on the substrate. Deposition begins before the substrate reaches the preset temperature, and the temperature consistency of the substrate cannot be guaranteed during its movement. This can easily lead to inconsistencies in film formation between the initial and middle sections of the substrate, resulting in poor film quality and uneven film thickness. Furthermore, process gases inside the reaction chamber can easily escape with the substrate, condense at the inlet and outlet, and form powder particles that contaminate the substrate, affecting the quality of the deposited film. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes an atomic layer deposition apparatus that can improve the uniformity of film formation on substrates and the quality of thin film deposition.

[0004] An atomic layer deposition apparatus according to an embodiment of the present invention is used to form a thin film on a substrate surface, comprising a reaction chamber, a reaction module, and a heating module. The reaction chamber has an inlet and an outlet at its two ends, respectively. The reaction module is located in the reaction chamber and defines a reaction space for the substrate to pass through. The two ends of the reaction space are connected to the inlet and the outlet, respectively. The reaction module is capable of releasing process gas to the substrate. The heating module is located in the reaction chamber and is disposed at one end of the reaction module facing the inlet and the other end of the reaction module facing the outlet.

[0005] The atomic layer deposition apparatus according to embodiments of the present invention has at least the following beneficial effects:

[0006] In the atomic layer deposition apparatus of this invention, a heating module is disposed at one end of the reaction module facing the inlet and the other end facing the outlet. The heating module can release heat, thereby heating the areas near the inlet and outlet of the reaction chamber to overcome the defect of the outlet area having a lower temperature due to rapid heat dissipation and to compensate for the heat loss in the outlet area. The heat released by the heating module can be transferred to the substrate entering the reaction chamber, so that the temperature of each area of ​​the substrate remains consistent during its movement, thereby improving the uniformity of the film thickness and the film quality of the substrate. Furthermore, under the heating effect of the heating module on the outlet area, the temperature of the outlet area increases, and the process gas moving with the substrate to the outlet area is less likely to condense at the outlet, thereby reducing the probability of the process gas forming powder particles that contaminate the substrate.

[0007] According to some embodiments of the present invention, the heating module includes a heating body and a heating element, wherein the heating element is disposed inside the heating body;

[0008] The heating body has a purge channel that extends to the side of the heating body facing the reaction space, and the purge channel is used to release purge gas into the reaction space.

[0009] According to some embodiments of the present invention, the purge channel is arranged around the heating element;

[0010] And / or, multiple heating elements are provided, and the purging channels are located between adjacent heating elements;

[0011] And / or, the heating element and the purge channel are arranged alternately along the extension direction of the reaction space;

[0012] According to some embodiments of the present invention, the heating module includes a heating body and a heating element, the heating element being disposed inside the heating body; the reaction module includes a spray plate, the spray plate being provided with a plurality of gas channels spaced apart along the extension direction of the reaction space, the gas channels being used to release reaction gases into the reaction space;

[0013] The heating element is formed at the end of the spray plate; or the heating element is spliced ​​to the end of the spray plate.

[0014] According to some embodiments of the present invention, the reaction module includes a spray plate for releasing process gas into the reaction space, and the heating module includes a heating body and a heating element, the heating element being disposed inside the heating body, and the end of the spray plate forming the heating body;

[0015] The spray plate is provided with multiple temperature control zones arranged sequentially along the extension direction of the reaction space. The temperature control zone including the heating module is the first temperature control zone, and the heating module is used to heat the first temperature control zone. The temperature control zone that is different from the first temperature control zone is the second temperature control zone. The reaction module also includes multiple independent temperature control components, each of which corresponds to a second temperature control zone and is used to heat the corresponding second temperature control zone.

[0016] According to some embodiments of the present invention, the reaction chamber includes a cover, the reaction module includes a spray plate for releasing reaction gas into the reaction space, the cover is located on the side of the spray plate facing away from the reaction space, and an exhaust chamber is provided between the cover and the spray plate; the reaction module includes an exhaust section, the exhaust section protruding relative to the spray plate toward the cover, the exhaust section having an exhaust channel communicating the reaction space and the exhaust chamber, the exhaust channel communicating with the exhaust chamber through an exhaust port;

[0017] The exhaust port is located on the periphery of the exhaust section; or, the exhaust port is located at one end of the exhaust section facing the cover. The reaction module also includes a baffle, which is located on the side of the spray plate facing the cover and blocks the exhaust port.

[0018] According to some embodiments of the present invention, the exhaust port is disposed at one end of the exhaust section facing the cover, and the reaction module further includes a baffle, the baffle is located on the side of the spray plate facing the cover, and blocks the exhaust port of the exhaust channel communicating with the exhaust chamber; the baffle is recessed towards the cover and forms a cavity, and part of the exhaust section is inserted into the cavity.

[0019] According to some embodiments of the present invention, the reaction module further includes a gas equalization plate, which is located between the exhaust port and the cover, and the gas equalization plate is provided with a plurality of through-holes; the reaction chamber is provided with an exhaust port, which is located on the side of the gas equalization plate facing the cover.

[0020] And / or, the reaction chamber further includes a heating system disposed on the side of the cover facing away from the spray plate, the heating system being used to heat the cover.

[0021] According to some embodiments of the present invention, at least one of the spray plate facing the cover, the spray plate facing the reaction space, and the outer peripheral side of the exhaust section is detachably provided with a liner.

[0022] According to some embodiments of the present invention, the reaction module further includes a plurality of partitions, the partitions being arranged at intervals along the extension direction of the reaction space, and the two ends of the partitions being respectively connected to the cover and the spray plate, so as to divide the exhaust chamber into a plurality of mutually isolated isolation chambers;

[0023] The spray plate is provided with a plurality of gas channels arranged at intervals along the extension direction of the reaction space. The gas channels and the exhaust section are arranged alternately along the extension direction of the reaction space. Along the extension direction of the reaction space, the gas channels are sequentially configured as reaction gas channels and purge gas channels, and the isolation chambers are sequentially configured as a first isolation chamber and a second isolation chamber. The reaction gas channels and the exhaust sections located on both sides of the reaction gas channels are located in the first isolation chamber, and the purge gas channels are located in the second isolation chamber.

[0024] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0025] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0026] Figure 1 This is a schematic diagram of one embodiment of the atomic layer deposition apparatus of the present invention;

[0027] Figure 2 for Figure 1 Enlarged view of point A in the middle;

[0028] Figure 3 This is a schematic diagram of the fit between the baffle and the exhaust port in one embodiment;

[0029] Figure 4 This is a schematic diagram of the exhaust port in another embodiment;

[0030] Figure 5 This is a schematic diagram showing the distribution of one embodiment of the partition.

[0031] Figure label:

[0032] Substrate 10;

[0033] The reaction chamber is 100, the inlet is 110, the outlet is 120, the cover is 130, the exhaust chamber is 140, the isolation chamber is 141, the first isolation chamber is 141a, the second isolation chamber is 141b, the exhaust port is 150, and the heating system is 160.

[0034] The reaction module 200, reaction space 210, spray plate 220, gas channel 221, reaction gas channel 221a, purging gas channel 221b, heater 230, first temperature control zone 240, second temperature control zone 250, exhaust channel 260, exhaust port 261, exhaust part 270, baffle 280, cavity 281, opening 282, gas equalization plate 290, liner 201, partition 202;

[0035] Heating module 300, heating body 310, heating element 320, purging channel 330. Detailed Implementation

[0036] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0037] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0038] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0039] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0040] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0041] Atomic layer deposition (ALD) equipment typically includes a reaction module located inside a reaction chamber. A substrate enters and exits the reaction chamber at a certain speed through the inlet and outlet. As the substrate passes through the reaction module, process gases released from the module deposit onto the substrate surface to form a thin film. The portion of the reaction module near the inlet and outlet, connected to the external space of the reaction chamber, experiences rapid heat dissipation, leading to uneven temperature distribution across the substrate. Deposition begins before the substrate reaches the preset temperature, and temperature consistency cannot be guaranteed during its movement. This can easily result in inconsistent film formation between the initial and middle sections of the substrate, leading to poor film quality and uneven film thickness. Furthermore, process gases inside the reaction chamber can easily escape with the substrate, condensing at the inlet and outlet and forming powder particles that contaminate the substrate, affecting the quality of the deposited thin film.

[0042] An embodiment of the present invention provides an atomic layer deposition apparatus for forming a thin film on the surface of a substrate 10. (See reference...) Figure 1 The atomic layer deposition (ALD) apparatus includes a reaction chamber 100, a reaction module 200, and a heating module 300. The reaction chamber 100 has an inlet 110 and an outlet 120 at its two ends. The substrate 10 can enter the reaction chamber 100 through the inlet 110 and exit through the outlet 120. The reaction module 200 and the heating module 300 are both located inside the reaction chamber 100. The reaction module 200 defines a reaction space 210 for the substrate 10 to pass through. The two ends of the reaction space 210 are connected to the inlet 110 and the outlet 120, respectively. The substrate 10 can enter the reaction chamber 10 through the inlet 110... Inside the reaction space 210, the reaction module 200 releases process gas to the substrate 10 that has entered the reaction space 210. The process gas reacts and deposits on the surface of the substrate 10, thereby forming a thin film. After passing through the reaction space 210, the substrate 10 is removed from the reaction chamber 100 through the outlet 120. In some embodiments, the substrate 10 reciprocates. In this case, the substrate 10 enters the reaction chamber 100 through the inlet 110 and is removed from the reaction chamber 100 through the outlet 120. It can then re-enter the reaction chamber 100 through the outlet 120 and be removed from the reaction chamber through the inlet 110.

[0043] The heating module 300 is located at one end of the reaction module 200 facing the inlet 110 and the other end facing the outlet 120. The heating module 300 can release heat, so that the areas in the reaction chamber 100 near the inlet 110 and the outlet 120 are heated by the heating module 300 to overcome the defect of low temperature in the inlet and outlet areas due to rapid heat dissipation and to make up for the heat loss in the inlet and outlet areas. The heat released by the heating module 300 can be transferred to the substrate 10 entering the reaction chamber 100, so that the temperature of each area of ​​the substrate 10 remains consistent during its movement, thereby improving the uniformity of film thickness and film formation quality of the substrate 10. Furthermore, under the heating effect of the heating module 300 on the outlet 120 area, the temperature of the outlet 120 area rises. During the reciprocating movement of the substrate 10, the process gas can flow to the inlet 110 along with the forward movement of the substrate 10, or flow to the outlet 120 along with the reverse movement of the substrate 10. The process gas that moves to the inlet and outlet areas with the substrate 10 is less likely to condense at the outlet 120, thereby reducing the probability of the process gas forming powder particles that contaminate the substrate 10.

[0044] Understandably, during the process of the substrate 10 entering the reaction space 210 from outside the reaction chamber 100, there may be situations where the initial section of the substrate 10 is not heated or there is heat loss during the journey. This can easily cause the substrate 10 to begin deposition before reaching the process temperature, resulting in inconsistent film formation between the initial and middle sections of the substrate 10, and uneven film thickness. In this application, before the substrate 10 enters the reaction space 210, the heating module 300 can preheat the substrate 10. All areas of the substrate 10 are heated by the heating module 300 at the inlet 110, preheating the substrate 10 to the preset process temperature. In this way, the deposition temperature of all areas of the substrate 10 is consistent, and the process gas is deposited at the process temperature, which can improve the film deposition quality of the substrate 10.

[0045] It should be noted that the reaction module 200 includes a spray plate 220, which has multiple gas channels 221 arranged at intervals along the extension direction of the reaction space 210. The gas channels 221 extend to the side of the spray plate 220 facing the reaction space 210 and are used to release process gases to the substrate 10. Further, along the extension direction of the reaction space 210, the gas channels 221 are sequentially configured as a reaction gas channel 221a and a purge gas channel 221b. The reaction gas channel 221a is used to release process gases to the substrate 10, and the purge gas channel 221b is used to release purge gases, such as inert gases like nitrogen and argon. The purge gases are used to isolate different types of reaction gases, purge reaction products and unreacted gases within the reaction space 210, so as to avoid the formation of byproducts such as powder particles that contaminate the substrate 10 and the reaction chamber 100.

[0046] For the case of single-sided coating of substrate 10, the atomic layer deposition equipment may include one reaction module 200, in which the spray plate 220 and the stage of substrate 10 define a reaction space 210; or, the atomic layer deposition equipment may include two reaction modules 200, in which the reaction space 210 is defined on opposite sides of the two spray plates 220, with one spray plate 220 of one reaction module 200 releasing process gas to substrate 10, and the spray plate 220 of the other reaction module 200 releasing inert gas to reaction space 210, so that substrate 10 is suspended in reaction space 210, avoiding friction between substrate 10 and spray plate 220, thus achieving single-sided coating of substrate 10. For the case of double-sided coating of substrate 10, such as... Figure 1 As shown, the atomic layer deposition (ALD) apparatus includes two reaction modules 200. In this case, the two spray plates 220 define a reaction space 210 on opposite sides. The two spray plates 220 release process gases to opposite sides of the substrate 10, achieving double-sided coating of the substrate 10. It should be noted that, in the case where the ALD apparatus includes two reaction modules 200, the gas channels 221 of the two spray plates 220 are arranged vertically to ensure that the upper and lower surfaces of the substrate 10 are subjected to the same airflow, maintaining balance and thus suspending it within the reaction space 210.

[0047] Reference Figure 2 The heating module 300 includes a heating body 310 and heating elements 320. The heating elements 320 are disposed inside the heating body 310. The heating elements 320 are not limited to halogen heating tubes, stainless steel armored heating wires, etc. The heat generated by the heating elements 320 is dissipated into the reaction chamber 100 through the heating body 310. It is understood that the heating elements 320 can be disposed on the side of the heating body 310 facing the reaction space 210 to accelerate the heating rate of the inlet and outlet areas by the heating module 300. To improve the heating efficiency of the heating module 300, multiple heating elements 320 can be disposed, and multiple heating elements 320 can release heat simultaneously. Multiple heating elements 320 can also be disposed along the traveling direction of the substrate 10 to increase the heat dissipation area of ​​the heating module 300, so that the substrate 10 in the inlet and outlet areas can be heated over a large area, and the deposition temperature of each area of ​​the substrate 10 remains consistent.

[0048] In one embodiment, the heating module 300 and the reaction module 200 are spliced ​​together. Specifically, the heating body 310 is spliced ​​to the end of the spray plate 220. The splicing method between the heating body 310 and the spray plate 220 is not limited to welding, threaded connection, snap-fit, etc. Because the heating module 300 and the reaction module 200 are spliced ​​together, the combination of the heating module 300 and the reaction module 200 is more convenient, which is beneficial to the disassembly, assembly, and subsequent maintenance of the heating module 300 or the reaction module 200. In addition, according to process requirements, heating modules 300 and reaction modules 200 with different heating areas, different heating intensities, or different heating powers can be selected for splicing. It should be noted that the side of the heating body 310 facing the reaction space 210 is aligned with the side of the spray plate 220 facing the reaction space 210, and there are no protruding structures on the travel path of the substrate 10, reducing the probability of the substrate 10 being scratched.

[0049] In another embodiment, the reaction module 200 and the heating module 300 are configured as an integral structure, and the end of the spray plate 220 forms a heating body 310. Specifically, two heating bodies 310 are formed at the two ends of the spray plate 220 facing the inlet 110 and the outlet 120, respectively. In this way, the end of the reaction module 200 near the outlet 120 has a built-in heating function, which can make up for the heat loss on both sides of the outlet 120 and keep the temperature of the two sides and the middle area of ​​the substrate 10 consistent.

[0050] Given that process gases can easily overflow into the inlet and outlet areas along with the substrate 10 and condense at the outlet 120 to form contaminants such as powder particles, in one embodiment of the present invention, a purge channel 330 is further provided within the heating body 310. The purge channel 330 extends to the side of the heating body 310 facing the reaction space 210. The purge channel 330 is used to release purge gas into the reaction space 210. The purge gas is not limited to inert gases such as nitrogen or argon. Since the purge gas has been heated to the preset process value before entering the purge channel 330, and the purge gas is further heated by the heating element 320 during its passage through the purge channel 330, the purge gas is further heated by the heating element 320. The purge gas, heated to a certain high temperature, comes into contact with the substrate 10. Under the dual heating effect of the heat released by the heating element 320 and the purge gas, the portion of the substrate 10 in the inlet and outlet areas heats up rapidly, ensuring the temperature uniformity of all areas of the substrate 10. At the same time, it raises the temperature of the inlet and outlet areas of the reaction chamber 100, thereby preventing the process gas from condensing and forming powder particles. In addition, the purge gas can also remove unreacted and reaction byproducts from the surface of the substrate 10, preventing unreacted process gas from condensing and forming powder particles on the surface after the substrate 10 is removed from the reaction chamber 100, which would affect the film quality of the substrate 10.

[0051] Furthermore, in order to increase the heating rate of the purge gas as it passes through the purge channel 330, in one embodiment of the present invention, multiple heating elements 320 are provided, and the purge channel 330 is disposed between adjacent heating elements 320; in this way, the heat generated by the multiple heating elements 320 can be released simultaneously into the purge channel 330 to heat the purge gas in the purge channel 330, so as to rapidly raise the temperature of the purge gas.

[0052] Alternatively, in another embodiment, multiple heating elements 320 and purge channels 330 are provided, and the multiple heating elements 320 and purge channels 330 are arranged alternately along the extension direction of the reaction space 210, so that each purge channel 330 can receive heat transfer from at least one heating element 320. On the one hand, the multiple purge channels 330 simultaneously blow purge gas, which can increase the purge area and heating efficiency of the purge gas on the substrate 10, and ensure that the gas that has not been completely reacted on the surface of the substrate 10 is removed more thoroughly. On the other hand, it can increase the heat dissipation area of ​​the heating module 300 and the heat-receiving area of ​​the substrate 10, so that the part of the substrate 10 in the inlet and outlet area heats up quickly.

[0053] Alternatively, in another embodiment, the purge channel 330 is arranged around the heating element 320, so that the purge channel 330 can maximize the use of the heat released by the heating element 320 to heat the passing purge gas, and at the same time lengthen the flow path of the purge gas before it is blown out, so that the temperature rise of the purge gas is more complete. Understandably, a part of the purge channel 330 can be configured as an arc shape, a zigzag shape, a curve shape, etc., to surround the periphery of the heating element 320; in addition, the purge channel 330 can surround one or more heating elements 320.

[0054] Understandably, the reaction gas channel 221a and the purge gas channel 221b are arranged alternately along the extension direction of the reaction space 210. Adjacent reaction gas channels 221a are used to release different types of reaction gases. The different types of reaction gases react and deposit on the surface of the substrate 10. The spray plate 220 includes multiple process circulation groups, each of which includes multiple gas channels 221. The multiple process circulation groups are arranged sequentially along the extension direction of the reaction space 210. For example, a process circulation group includes four gas channels 221, of which two gas channels 221 are reaction gas channels 221a and the other two gas channels 221 are purge gas channels 221b. The two reaction gas channels 221a release different types of process gases respectively. When the substrate 10 moves in the reaction space 210, it will pass through different process circulation groups in sequence. The different process circulation groups release gases to the surface of the substrate 10 in sequence to achieve cyclic coating of the substrate 10 and improve the coating rate.

[0055] Reference Figure 3The reaction module 200 includes a heater 230 for heating the spray plate 220. The heat from the spray plate 220 is released into the reaction space 210, so that the substrate 10 passing through the reaction space 210 is heated to the process temperature, and the process gas can be deposited on the substrate 10 at the process temperature. In some embodiments, the heater 230 may be disposed on the side of the spray plate 220 away from the reaction space 210, or disposed on the side of the spray plate 220 close to the reaction space 210.

[0056] As the number of coating cycles and the size of the substrate 10 increase, the size of the spray plate 220 also increases, making the temperature difference between the central area and the edge area of ​​the spray plate 220 more pronounced, affecting the quality and uniformity of the coating on the substrate 10. Based on this, in one embodiment of the present invention, referring to... Figure 1 The spray plate 220 has multiple temperature control zones arranged sequentially along the extension direction of the reaction space 210. The temperature control zone including the heating module 300 is the first temperature control zone 240, which is used to heat the first temperature control zone 240. Other temperature control zones, distinct from the first temperature control zone 240, are the second temperature control zones 250. Thus, along the extension direction of the reaction space 210, the arrangement of the temperature control zones is: first temperature control zone 240 - n second temperature control zones 250 - first temperature control zone 240, where n ≥ 2. The heater 230 of the reaction module 200 includes multiple independent temperature control components, each corresponding to a second temperature control zone 250 and used to heat the corresponding second temperature control zone 250. That is, each second temperature control zone 250 is independently controlled by one temperature control component. Understandably, there is also a situation where heat dissipation is fast on both sides along the travel direction of the substrate 10, resulting in a temperature difference between the central area of ​​the substrate 10 and the edge areas on the left and right sides. Based on this, each temperature control zone can be provided with multiple temperature control units along the width direction of the substrate 10, thereby realizing independent control of different areas in the width direction of the substrate 10, thereby reducing the temperature difference between different areas of the substrate 10, making the temperature of each part of the substrate 10 more uniform, and improving the coating quality of the substrate 10.

[0057] By setting multiple independent temperature control components and heating modules 300, the first temperature control zone 240 and the second temperature control zone 250 are independently temperature controlled. When the temperature of a certain temperature control zone is lower than the preset temperature, the corresponding temperature control component or heating module 300 can perform corresponding temperature compensation to keep the temperature of each temperature control zone consistent, eliminate the temperature difference between different areas of the spray plate 220, and when the substrate 10 passes through the reaction space 210 corresponding to different temperature control zones, the temperature environment is consistent, which can improve the quality and uniformity of the coating of the substrate 10.

[0058] Understandably, the reaction module 200 also includes a temperature detection element and a control unit. The temperature detection element is used to detect the temperature of each temperature control zone. The control unit sends a heating command to the corresponding temperature control component based on the comparison result between the temperature detected value and the preset temperature value. This causes the temperature control component to heat the second temperature control zone 250, which is below the preset temperature, or causes the heating module 300 to heat the first temperature control zone 240, which is below the preset temperature. It should be noted that the preset temperature value can be a specific temperature value or a temperature range.

[0059] Reference Figure 3 and Figure 4 The reaction chamber 100 also includes a cover 130, which can be disposed on the top of the reaction chamber 100. In one embodiment, the cover 130 is located on the side of the spray plate 220 facing away from the reaction space 210. An exhaust chamber 140 is provided between the cover 130 and the spray plate 220. An exhaust hole 150 is provided on the side wall of the reaction chamber 100, and the exhaust hole 150 communicates with the exhaust chamber 140. The spray plate 220 is also provided with an exhaust channel 260, which extends to the side of the spray plate 220 facing away from the reaction space 210. On one side of the reaction space 210, the exhaust channel 260 connects the exhaust chamber 140 and the reaction space 210; the reaction chamber 100 is connected to a negative pressure system at the exhaust port 150 so that negative pressure is generated in the exhaust chamber 140 and the exhaust channel 260 through the exhaust port 150. The unreacted gas and reaction by-products in the reaction space 210 enter the exhaust channel 260 under the action of negative pressure, and are discharged into the exhaust chamber 140 through the exhaust port 261, and then discharged to the outside of the reaction chamber 100 through the exhaust port 150.

[0060] Because the cover 130 is far from the heater 230 of the reaction module 200 and is connected to the outside, the cover 130 dissipates heat quickly. Therefore, the temperature of the cover 130 is lower than the process temperature. When the exhaust gas comes into contact with the inner surface of the cover 130, it is easy to condense and form powder particles due to the temperature difference. Or, because the film layer is thick due to long-term operation, dust particles, debris, and other contaminants are easily shed under vibration and other factors. These contaminants fall onto the substrate 10 through the exhaust channel 260, which can easily cause damage to the substrate 10 or defects such as poor film deposition quality. Based on this, in one embodiment of the present invention, referring to... Figure 4The reaction module 200 includes an exhaust section 270, which protrudes toward the cover 130 relative to the spray plate 220. An exhaust channel 260 is disposed inside the exhaust section 270, and an exhaust port 261 is disposed on the periphery of the exhaust section 270. The end of the exhaust section 270 facing the cover 130 is closed. In this way, the gas in the exhaust channel 260 can be discharged into the exhaust chamber 140 through the exhaust port 261 on the side of the exhaust port 261. Since the end of the exhaust section 270 facing the cover 130 is closed, dust particles and debris falling from the inner surface of the cover 130 will not enter the exhaust channel 260, thus preventing pollutants from contaminating the substrate 10 through the exhaust channel 260.

[0061] In another embodiment, reference is made to Figure 3 The exhaust port 261 is located at the end of the exhaust section 270 facing the cover 130. The reaction module 200 also includes a baffle 280, which is located on the side of the spray plate 220 facing the cover 130 and blocks the exhaust port 261. There is a gap between the baffle 280 and the end of the exhaust section 270. The gas in the exhaust channel 260 can flow directly along the extension direction of the exhaust channel 260 and be discharged into the exhaust chamber 140 through the exhaust port 261. The exhaust efficiency is high. Since the baffle 280 blocks the exhaust port 261, it can prevent dust particles and debris falling from the inner surface of the cover 130 from entering the exhaust channel 260, thereby preventing pollutants from contaminating the substrate 10 through the exhaust channel 260.

[0062] It should be noted that, for the method of using the baffle 280 to block the exhaust port 261, the surfaces of the baffle 280 facing and away from the cover 130 are both surface treated so that the baffle 280 can adsorb dust particles, is not easy to shed, and extends the maintenance time. The surface treatment of the baffle 280 is not limited to sandblasting, etching, chemical modification, etc.

[0063] The baffle 280 can be configured as a flat plate, spaced apart from the exhaust portion 270, and positioned on the side of the exhaust portion 270 facing the cover 130. The baffle 280 can also be configured as a curved surface, arc surface, or polygonal surface, to wrap around the end of the exhaust portion 270, thus more comprehensively covering the exhaust port 261. For example... Figure 3 As shown, the baffle 280 is recessed toward the cover 130, forming a cavity 281. Part of the exhaust portion 270 is inserted into the cavity 281, so that the exhaust port 261 is located inside the cavity 281. The baffle 280 surrounds the exhaust portion 270, improving the shielding effect of the baffle 280 on the exhaust port 261.

[0064] Furthermore, the end of the baffle 280 facing the exhaust section 270 forms an opening 282, which connects to the cavity 281. The exhaust section 270 is inserted into the cavity 281 through the opening. The opening of the opening 282 can be changed according to the exhaust demand of the exhaust channel 260 to adjust the exhaust capacity of the exhaust channel 260.

[0065] In one embodiment, reference is made to Figure 5 The reaction chamber 100 also includes a heating system 160, which is located on the side of the cover 130 facing away from the spray plate 220. The heating system 160 is used to heat the cover 130 to compensate for the heat loss of the cover 130, so that the temperature of the cover 130 is the same as the process temperature, reducing the condensation of residual gas on the cover 130, thereby reducing the probability of dust particles being generated on the surface of the cover 130.

[0066] like Figure 5 As shown, the reaction module 200 also includes a gas equalization plate 290, which is located between the exhaust port 261 and the cover 130. The gas equalization plate 290 has multiple through-holes, and the exhaust port 150 is located on the side of the gas equalization plate 290 facing the cover 130. The gas discharged through the exhaust port 261 is discharged into the space between the gas equalization plate 290 and the cover 130 through the holes on the gas equalization plate 290, and then discharged outside the reaction chamber 100 through the exhaust port 150. The gas equalization plate 290 can adjust the uniformity of the gas discharged in the exhaust chamber 140, thereby ensuring uniform exhaust in different areas of the entire width of the substrate 10 and optimizing the film formation quality of the substrate 10. It should be noted that the uniformly distributed perforated plate 290 may have uniformly distributed perforations or non-uniformly distributed perforations; for example, the perforations in the area of ​​the uniformly distributed perforated plate 290 closer to the exhaust hole 150 are densely distributed, while the perforations in the area of ​​the uniformly distributed perforated plate 290 farther from the exhaust hole 150 are sparsely distributed.

[0067] Additionally, refer to Figure 3 At least one of the following locations—the side of the spray plate 220 facing the cover 130, the side of the spray plate 220 facing the reaction space 210, and the outer periphery of the exhaust section 270—is detachably provided with a liner 201. The liner 201 undergoes surface treatment to absorb dust particles, preventing lint shedding and extending the maintenance cycle of the spray plate 220, exhaust section 270, etc. The surface treatment of the liner 201 is not limited to sandblasting, etching, or chemical modification. The liner 201 is detachably connected to the spray plate 220 or the exhaust section 270, making its disassembly, assembly, and maintenance convenient. It should be noted that, in the case where the liner 201 is provided on the side of the spray plate 220 facing the cover 130, the heater 230 of the reaction module 200 is located between the liner 201 and the spray plate 220, so that the liner 201 shields the heater 230, preventing dust particles from falling onto the surface of the heater 230.

[0068] The reaction module 200 also includes multiple partitions 202, which are spaced apart along the extension direction of the reaction space 210. The two ends of each partition 202 are connected to the cover 130 and the spray plate 220, respectively, to divide the exhaust chamber 140 into multiple mutually isolated isolation chambers 141. Gas channels 221 and exhaust sections 270 are alternately arranged along the extension direction of the reaction space 210. Along the extension direction of the reaction space 210, the isolation chambers 141 are sequentially configured as a first isolation chamber 141a and a second isolation chamber 141b; wherein the reaction gas channel 221a and the exhaust sections 270 located on both sides of the reaction gas channel 221a are located in the first isolation chamber. Inside 141a, the purge gas passage 221b is located inside the second isolation chamber 141b; thus, a certain type of reaction gas is concentrated and discharged into a first isolation chamber 141a, and the gas can be discharged simultaneously using two exhaust passages 260. The discharge spaces of different types of reaction gases are independent and separated from each other. As a result, unreacted and reaction byproducts in different types of reaction gases are separated by the partition 202 and then discharged through independent isolation chambers 141 respectively. This prevents different types of reaction gases from cross-mixing and reacting to form powder particles on the side of the spray plate 220 away from the reaction space 210, thus extending the maintenance cycle.

[0069] Understandably, the gas equalization plate 290 can be provided in multiple sections, with each section of the gas equalization plate 290 located between adjacent partitions 202. The gas discharged into the isolation chamber 141 by the exhaust channel 260 flows through the gas equalization plate 290 to the exhaust port 150, and then is discharged to the outside of the reaction chamber 100.

[0070] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. Atomic layer deposition apparatus for forming a thin film on a substrate surface, characterized in that The utility model relates to a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment.

2. The atomic layer deposition apparatus of claim 1, wherein The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment.

3. An atomic layer deposition apparatus according to claim 2, characterised in that, The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment.

4. The atomic layer deposition apparatus of claim 1, wherein The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment.

5. The atomic layer deposition apparatus of claim 1, wherein The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, and belongs to the technical field of substrate processing equipment. The utility model discloses a reaction chamber, reaction module and heating module for processing substrate, 6. The atomic layer deposition apparatus of claim 1, wherein The reaction module further comprises a uniform gas hole plate between the exhaust port and the cover, the uniform gas hole plate being provided with a plurality of through holes; the reaction chamber is provided with an exhaust hole on the side of the uniform gas hole plate facing the cover; The reaction chamber further comprises a heating system provided on the side of the cover away from the shower plate, the heating system being used for heating the cover.

7. The atomic layer deposition apparatus of claim 1, wherein At least one of the side of the shower plate facing the cover, the side of the shower plate facing the reaction space, and the outer circumferential side of the exhaust portion is detachably provided with a lining plate.

8. The atomic layer deposition apparatus of claim 1, wherein, The reaction module further comprises a plurality of partitions arranged at intervals along the extension direction of the reaction space, two ends of each partition being connected to the cover and the shower plate respectively to divide the exhaust cavity into a plurality of isolated chambers. The shower plate is provided with a plurality of gas channels arranged at intervals along the extension direction of the reaction space, the gas channels and the exhaust portions being arranged alternately along the extension direction of the reaction space, the gas channels being sequentially arranged as reaction gas channels and purge gas channels along the extension direction of the reaction space, the isolated chambers being sequentially arranged as first isolated chambers and second isolated chambers; wherein the reaction gas channels and the exhaust portions located on both sides of the reaction gas channels are located in the first isolated chambers, and the purge gas channels are located in the second isolated chambers.

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