Low-noise amplifier, radio frequency front-end module and electronic equipment

Abstract

The invention discloses a low-noise amplifier, a radio frequency front-end module and electronic equipment, the low-noise amplifier comprises a device area, a metal layer and a connecting structure, and the device area is provided with a first switch tube, a second switch tube and a first amplifier tube. The metal layer is stacked on the device region, the connecting structure is connected between the device region and the metal layer, and the connecting structure is configured to connect the second end of the first switch tube to a first switch port in the metal layer and connect the second end of the second switch tube to a second switch port in the metal layer; and connecting the output end of the first amplifier tube to a first signal port in the metal layer. Wherein one of the first switch port and the second switch port is connected with the first signal port, and the other one of the first switch port and the second switch port is not connected into a circuit of the low-noise amplifier. According to the low-noise amplifier, the circuit of the low-noise amplifier can be flexibly adjusted, so that the chip design of the low-noise amplifier is more flexible, and the application scene of the low-noise amplifier is enriched.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, and more particularly, to a low noise amplifier, a radio frequency front-end module and an electronic device. BACKGROUND

[0002] At present, the radio frequency front-end module has been widely applied in the fields of wireless communication, Internet of Things, smart home, etc., and it can include radio frequency switches, low noise amplifiers, filters, duplexers, power amplifiers and other devices to realize the receiving and transmitting tasks of radio frequency signals.

[0003] In the existing radio frequency front-end module, the radio frequency chip (for example, a low noise amplifier chip) inside it has the problem of single application scenario. SUMMARY

[0004] The embodiments of the present application provide a low noise amplifier, a radio frequency front-end module and an electronic device.

[0005] According to a first aspect of the present application, the embodiments of the present application provide a low noise amplifier, which comprises a device region, a metal layer and a connecting structure, wherein the device region is provided with a first switch tube, a second switch tube and a first amplifier tube, a first end of the first switch tube is connected to a circuit of a first low noise power amplifier module, and a first end of the second switch tube is connected to a circuit of a second low noise power amplifier module; an input end of the first amplifier tube is used for inputting a first radio frequency signal. The metal layer is stacked on the device region, and the connecting structure is connected between the device region and the metal layer; the connecting structure is configured to connect a second end of the first switch tube to a first switch port in the metal layer, connect a second end of the second switch tube to a second switch port in the metal layer, and connect an output end of the first amplifier tube to a first signal port in the metal layer. One of the first switch port and the second switch port is connected to the first signal port, and the other of the first switch port and the second switch port is not connected to the circuit of the low noise amplifier.

[0006] The embodiment of the present application provides a low noise amplifier, which can comprise a device region, a metal layer and a connecting structure. Since the two switch tubes (i.e., the first switch tube and the second switch tube) are arranged in advance in the device region of the low noise amplifier, the first ends of the two switch tubes are connected to the two low noise power amplifier modules respectively, and the second ends of the two switch tubes are connected to the two switch ports (i.e., the first switch port and the second switch port) in the metal layer, so that the output end of the first amplification tube can be connected to one of the two switch ports to connect the first amplification tube to the corresponding low noise power amplifier module by modifying the metal layer according to the actual circuit architecture of the low noise amplifier. Therefore, the circuit of the low noise amplifier can be flexibly adjusted, the chip design of the low noise amplifier is more flexible, and the application scenarios of the low noise amplifier are enriched.

[0007] Further, during the adjustment of the circuit of the low noise amplifier, only the connection position and the connection mode of the connection wire in the metal layer need to be adjusted, and the transistors in the device region do not need to be rearranged (for example, new transistors are added or transistors are deleted, the connection mode of the transistor in the device region is modified, etc.), so that the design cost of the low noise amplifier can be saved and the development cycle of the low noise amplifier can be shortened.

[0008] According to the second aspect of the present application, the embodiment of the present application further provides a low noise amplifier, which comprises a device region, a metal layer and a connecting structure. The device region is provided with a first amplification tube, and the input end of the first amplification tube is used for inputting a first radio frequency signal. The metal layer is stacked on the device region, and the metal layer is provided with a first signal port, a first switch port and a second switch port. The connecting structure is connected between the device region and the metal layer, and the connecting structure is configured to connect the output end of the first amplification tube to the first signal port in the metal layer. One of the first switch port and the second switch port is connected to the first signal port, and the other of the first switch port and the second switch port is not connected to the circuit of the low noise amplifier.

[0009] The embodiment of the present application further provides a low noise amplifier, which can comprise a device region, a metal layer and a connecting structure. Since the two switch ports (i.e., the first switch port and the second switch port) are arranged in advance in the metal layer of the low noise amplifier, the output end of the first amplification tube can be connected to one of the two switch ports. Therefore, the circuit of the low noise amplifier can be flexibly adjusted, the chip design of the low noise amplifier is more flexible, and the application scenarios of the low noise amplifier are enriched.

[0010] Further, in the process of adjusting the circuit of the low noise amplifier, only the connection position and connection mode of the connection wire in the metal layer need to be adjusted, without re-arranging the transistors in the device region (for example, adding or deleting transistors, modifying the connection mode of the transistors in the device region, etc.), which can save the design cost of the low noise amplifier and shorten the development cycle of the low noise amplifier.

[0011] According to a third aspect of the present application, the embodiments of the present application further provide a low noise amplifier, comprising a device region, a metal layer and a connection structure, wherein the device region is provided with a first amplification transistor, a second amplification transistor, a first switch transistor, a second switch transistor and a third switch transistor; an input end of the first amplification transistor is used for inputting a first radio frequency signal, and an input end of the second amplification transistor is used for inputting a second radio frequency signal; a first end of the first switch transistor, a first end of the second switch transistor and a first end of the third switch transistor are connected to the circuit of the low noise amplifier. The metal layer is stacked on the device region, and the connection structure is connected between the device region and the metal layer; the connection structure is configured to connect a second end of the first switch transistor to a first switch port in the metal layer, connect a second end of the second switch transistor to a second switch port in the metal layer, connect a second end of the third switch transistor to a third switch port in the metal layer, connect an output end of the first amplification transistor to a first signal port in the metal layer, and connect an output end of the second amplification transistor to a second signal port in the metal layer. Among them, two of the first switch port, the second switch port and the third switch port are connected to the first signal port and the second signal port one by one, and the remaining one of the first switch port, the second switch port and the third switch port is not connected to the circuit of the low noise amplifier.

[0012] The embodiment of the present application also provides a low noise amplifier, which can comprise a device region, a metal layer and a connecting structure. Since the three switch transistors (i.e., the first switch transistor, the second switch transistor and the third switch transistor) are arranged in advance in the device region of the low noise amplifier, the first ends of the three switch transistors can be connected to three low noise power amplifier modules respectively, and the second ends of the three switch transistors are connected to three switch ports (i.e., the first switch port, the second switch port and the third switch port) in the metal layer respectively, so that the first signal port connected to the output end of the first amplification transistor can be connected to one of the three switch ports to connect the first amplification transistor to the corresponding low noise power amplifier module, and the first signal port connected to the output end of the second amplification transistor can be connected to another one of the three switch ports to connect the second amplification transistor to the corresponding low noise power amplifier module, and the second amplification transistor and the first amplification transistor are connected to different low noise power amplifier modules respectively. Therefore, the circuit of the low noise amplifier can be adjusted flexibly, the chip design of the low noise amplifier is more flexible, and the application scenarios of the low noise amplifier are enriched.

[0013] Further, during the adjustment of the circuit of the low noise amplifier, only the connection position and the connection mode of the connecting wires in the metal layer need to be adjusted, and the transistors in the device region do not need to be rearranged (for example, the transistors are added or deleted, or the connection mode of the transistors in the device region is modified), so that the design cost of the low noise amplifier can be saved and the development cycle of the low noise amplifier can be shortened.

[0014] According to a fourth aspect of the present application, the embodiment of the present application also provides a radio frequency front end module, which comprises the low noise amplifier.

[0015] According to a fifth aspect of the present application, the embodiment of the present application also provides an electronic device, which comprises the radio frequency front end module. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0017] Figure 1 is a structural schematic diagram of a low noise amplifier provided by the embodiment of the present application.

[0018] Figure 2 isFigure 1 A cross-sectional structure diagram of the low noise amplifier shown.

[0019] Figure 3 Figure 1 Another cross-sectional structure diagram of the low noise amplifier shown.

[0020] Figure 4 Another structure diagram of the low noise amplifier provided by the embodiments of the present application.

[0021] Figure 5 Figure 1 An arrangement mode diagram of the first switch tube and the second switch tube in the low noise amplifier shown.

[0022] Figure 6 Figure 1 A structure diagram of the first switch tube in the low noise amplifier shown.

[0023] Figure 7 Figure 1 A corresponding circuit structure diagram of the low noise amplifier shown.

[0024] Figure 8 Figure 4 A corresponding circuit structure diagram of the low noise amplifier shown.

[0025] Figure 9 Another structure diagram of the low noise amplifier provided by the embodiments of the present application.

[0026] Figure 10 Figure 9 A cross-sectional structure diagram of the low noise amplifier shown.

[0027] Figure 11 A structure block diagram of the electronic device provided by the embodiments of the present application. DETAILED DESCRIPTION

[0028] In order to enable persons skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by persons skilled in the art without creative labor fall within the scope of protection of the present application.

[0029] ​​​​​​The embodiment of the present application provides a kind of low noise amplifier 100, low noise amplifier 100 (Low-Noise Amplifier, LNA) is a kind of device for amplifying weak signal, it can under the premise of reducing as far as possible the noise introduced by itself, weak input signal (for example, radio frequency signal) is power amplified, to enable subsequent processing circuit to be handled to power amplified signal successfully, to improve the signal-to-noise ratio of signal.

[0030] Please refer to Figures 1 to 4 , low noise amplifier 100 can include device area 20, metal layer 30 and connecting structure 40, device area 20 can be equipped with first switch tube 211, second switch tube 212 and first amplifying tube 231, the first end (not shown in the figure) of first switch tube 211 is connected into the circuit of first low noise power amplifier module 101, the first end (not shown in the figure) of second switch tube 212 is connected into the circuit of second low noise power amplifier module 102. Wherein, the input end (not shown in the figure) of first amplifying tube 231 is used to input first radio frequency signal, and is used to power amplify first radio frequency signal.

[0031] Here, "first low noise power amplifier module 101" and "second low noise power amplifier module 102" can be regarded as two functional modules with independent input and output, and the two can power amplify input radio frequency signal and output corresponding radio frequency signal respectively.

[0032] In other possible embodiments, first switch tube 211 and second switch tube 212 can also be connected into the circuit of the same low noise power amplifier module and serve as switches on two different output paths in the circuit respectively.

[0033] Metal layer 30 is stacked on device area 20, and connecting structure 40 is connected between device area 20 and metal layer 30. Wherein, connecting structure 40 is configured to connect the second end (not shown in the figure) of first switch tube 211 to first switch port 301 in metal layer 30, connect the second end (not shown in the figure) of second switch tube 212 to second switch port 302 in metal layer 30, and connect the output end (not shown in the figure) of first amplifying tube 231 to first signal port 321 in metal layer 30.

[0034] Here, "switch port" and "signal port" are essentially metal ports (Pad) in metal layer 30, for the convenience of readers, the metal port connected with switch tube is called switch port, and the metal port connected with amplifying tube is called signal port.

[0035] Exemplarily, the connection structure 40 can include a metal via, which can be connected between the device region 20 and the metal layer 30 to connect the XX end of the XX tube to the XX port. Further, the connection structure 40 can also include a metal trace, one end of the metal via can be connected to the XX end of the XX tube, the other end of the metal via can be connected to a metal bump provided on the metal layer 30, and the metal trace is connected between the metal bump and the XX port, that is, the XX end of the XX tube can be connected to the XX port through the metal via and the metal trace in sequence. Further, the number of metal vias and metal traces can be multiple, so that the implementation of the connection structure 40 can be more flexible.

[0036] It should be noted here that "connecting the XX end of the XX tube to the XX port in the metal layer 30" can be directly connected through a metal via, a metal trace or the like. In addition, they can also be indirectly connected, for example, other components such as a capacitor can be connected between them.

[0037] Specifically, one of the first switch port 301 and the second switch port 302 is connected to the first signal port 321, and the other of the first switch port 301 and the second switch port 302 is not connected to the circuit of the low-noise amplifier 100. Figure 1 In the example shown, the first switch port 301 is connected to the first signal port 321, and the second switch port 302 is not connected to the circuit of the low-noise amplifier 100. Figure 4 In the example shown, the second switch port 302 is connected to the first signal port 321, and the first switch port 301 is not connected to the circuit of the low-noise amplifier 100.

[0038] "not connected" here means that one of the first switch port 301 and the second switch port 302 does not exist between the circuit architecture of the low-noise amplifier 100, that is, when the low-noise amplifier 100 is working normally, if the switch port connected to the switch tube is not connected to the circuit of the low-noise amplifier 100, it means that the switch tube is in "idle state" and cannot work.

[0039] That is, for the circuit architecture of the low-noise amplifier 100, in the scenario shown in Figure 1 the existence of the switch tube (the second switch tube 212) is redundant. Of course, in the scenario shown in Figure 4 the switch port connected to the switch tube (the second switch tube 212) is connected to the circuit of the low-noise amplifier 100, that is, connected to the first signal port 321 of the first amplification tube 231. In this case, for the circuit architecture of the radio frequency chip 100, the switch tube is in working state.

[0040] In some possible embodiments, the other one of the first switch port 301 and the second switch port 302 is not connected to all circuits included in the low-noise amplifier 100. It is not difficult to understand that, for the same low-noise amplifier 100, in addition to the first low-noise power amplifier module 101 and the second low-noise power amplifier module 102, other circuits with independent functions, such as a power supply circuit, a matching circuit, and the like, can be included in the low-noise amplifier 100. In this case, the other one of the first switch port 301 and the second switch port 302 not being connected to all circuits included in the low-noise amplifier 100 means that, regardless of any circuit in the low-noise amplifier 100 being in a working state, the radio frequency signal cannot pass through the switch tube in the circuit of the low-noise amplifier 100 that is not connected, and the switch tube is completely in an idle state and cannot turn on or turn off the signal branch.

[0041] The embodiment of the present application is provided with two switch tubes (i.e., the first switch tube 211 and the second switch tube 212) in the device region 20 of the low-noise amplifier 100, the first ends of the two switch tubes are connected to the two low-noise power amplifier modules respectively, and the second ends of the two switch tubes are connected to the two switch ports (i.e., the first switch port 301 and the second switch port 302) in the metal layer 30, so that the output end of the first amplification tube 231 can be connected to one of the two switch ports by modifying the metal layer 30 according to the actual circuit architecture of the low-noise amplifier 100, to connect the first amplification tube 231 to the corresponding low-noise power amplifier module. Therefore, the embodiment of the present application can flexibly adjust the circuit of the low-noise amplifier 100, so that the chip design of the low-noise amplifier 100 is more flexible, to enrich the application scenarios of the low-noise amplifier 100.

[0042] Further, in the process of adjusting the circuit of the low-noise amplifier 100, only the connection position and connection mode of the connection wires in the metal layer 30 need to be adjusted, and the transistors in the device region 20 do not need to be rearranged (for example, new transistors are added or old transistors are deleted, the connection mode of the transistors in the device region 20 is modified, and the like), which can save the design cost of the low-noise amplifier 100 and shorten the development cycle of the low-noise amplifier 100.

[0043] It should be noted that, in the related art, if a radio frequency signal (for example, the first radio frequency signal in the embodiment) needs to be switchably input into the first low-noise power amplifier module 101 or the second low-noise power amplifier module 102, a switching switch (for example, a single-pole double-throw switch, or two independent switches) is usually arranged. In this case, the switching switch of one branch is always in the off state, for example, when the first low-noise power amplifier module 101 is used to amplify the power of the first radio frequency signal, the switching switch in the second low-noise power amplifier module 102 is fixed in the off state, which is equivalent to a parasitic capacitor, affecting the normal transmission of the radio frequency signal.

[0044] In the present application, by placing the switching port connected to the switching tube in the circuit not connected to the low-noise amplifier 100 in an idle state, it is difficult to form a parasitic capacitor, thereby improving the isolation of the radio frequency signal and ensuring the transmission efficiency of the radio frequency signal.

[0045] The specific implementation of the low-noise amplifier 100 is described below.

[0046] In the embodiment, the device region 20 refers to the region of the low-noise amplifier 100 for layout of active devices (for example, the first switching tube 211, the second switching tube 212, and the first amplification tube 231). For example, the device region 20 can grow a semiconductor thin film on a substrate material (for example, a silicon substrate, a sapphire substrate, etc.) by epitaxial growth technology. For example, a gallium arsenide (GaAs) thin film is grown on a silicon substrate. Then, the structure of the active region is formed by photolithography etching technology, and specific impurity atoms (such as boron, phosphorus, etc.) are doped in the active region by ion implantation or diffusion process to form P-type or N-type semiconductor regions, and finally a plurality of functional poles corresponding to the transistors are prepared.

[0047] As an example, the first switching tube 211, the second switching tube 212, and the first amplification tube 231 can all be field effect tubes and are arranged in the device region 20. For the switching tube, the first end of the switching tube (for example, the first switching tube 211, the second switching tube 212) can be the drain of the field effect tube, the second end of the switching tube can be the source of the field effect tube, and the control end of the switching tube can be the gate of the field effect tube. Therefore, by applying a control signal to the control end of the switching tube, the signal branch between the first end and the second end of the switching tube can be turned on or off.

[0048] For the amplifying tube, the input end of the amplifying tube (e.g., the first amplifying tube 231) can be the gate of the field effect tube, the output end of the amplifying tube can be the drain of the field effect tube, and the ground end of the amplifying tube can be the source of the field effect tube. Exemplarily, the field effect tube can be a junction field effect transistor (JFET), a metal-oxide-semiconductor field effect transistor (MOSFET), or the like, and the present example is not limited in this regard.

[0049] As another example, the first switch tube 211, the second switch tube 212, and the first amplifying tube 231 can all be bipolar tubes and be arranged in the device region 20. For the switch tube, the first end of the switch tube (e.g., the first switch tube 211 and the second switch tube 212) can be the emitter of the bipolar tube, the second end of the switch tube can be the collector of the bipolar tube, and the control end of the switch tube can be the base of the bipolar tube. Therefore, by applying a control signal to the control end of the switch tube, the signal branch between the first end and the second end of the switch tube can be turned on or off.

[0050] For the amplifying tube, the input end of the amplifying tube (e.g., the first amplifying tube 231) can be the gate of the field effect tube, the output end of the amplifying tube can be the drain of the field effect tube, and the ground end of the amplifying tube can be the source of the field effect tube. Exemplarily, the field effect tube can be a junction field effect transistor (JFET), a metal-oxide-semiconductor field effect transistor (MOSFET), or the like, and the present example is not limited in this regard.

[0051] Specifically, in the description below, the first switch tube 211, the second switch tube 212, and the first amplifying tube 231 are all taken as examples of field effect tubes (MOS tubes).

[0052] In the present embodiment, the device region 20 can be provided with a plurality of transistors, and the first switch tube 211, the second switch tube 212, and the first amplifying tube 231 are three of the plurality of transistors. The plurality of transistors can be arranged in the device region 20 in a spaced manner. Specifically, the number of transistors can be greater than or equal to 2, for example, the number of transistors can be 2, 3, 5, 8, 10, 15, 20, or the like. Of course, the plurality of transistors can be arranged in an M*N manner on the device region 20, and the present embodiment does not limit the arrangement manner of the plurality of transistors.

[0053] In the present embodiment, please refer to Figure 5The interval d between the first switch tube 211 and the second switch tube 212 is greater than or equal to 5 um. As an example, the interval d can be greater than or equal to 5 um and less than 10 um; as another example, the interval d can be greater than or equal to 10 um and less than 20 um. Exemplarily, the interval d can be 5 um, 8 um, 10 um, 15 um, 20 um, etc., and the embodiment is not limited specifically.

[0054] It should be noted that the switch tube not connected to the low noise amplifier 100 in the embodiment and the dummy tube in the related art which plays a circuit protection role are not the same. In one aspect, the switch tube not connected to the low noise amplifier 100 is connected to the port provided in the metal layer 30 through the connection structure 40; in another aspect, the switch tube not connected to the low noise amplifier 100 is also arranged at intervals with other transistors connected to the low noise amplifier 100, and the interval therebetween is greater than or equal to 5 um.

[0055] For the dummy tube, the dummy tube is not connected to the port in the metal layer 30, and the dummy tube is "close" to the transistor arrangement, and the interval therebetween is almost 0. Therefore, whether it is the arrangement mode of the transistor or the connection mode of the transistor, the switch tube not connected to the low noise amplifier 100 in the embodiment and the dummy tube are not the same.

[0056] It should be emphasized that the switch tube not connected to the low noise amplifier 100 in the embodiment plays a "pre-setting" role. If the low noise amplifier 100 needs to adjust the circuit architecture in the subsequent process, the amplification tube can be connected to the switch tube pre-set in other low noise power amplifier modules by modifying the metal layer 30, so that the corresponding radio frequency signal can be power amplified through other low noise power amplifier modules, so that the chip design of the low noise amplifier 100 is more flexible, to enrich the application scenarios of the low noise amplifier 100, and shorten the development cycle of the low noise amplifier 100.

[0057] In the embodiment, the first switch tube 211 has a first specified direction X1, and the first specified direction X1 is the extension direction of the straight line where the first end and the second end of the first switch tube 211 are located. The second switch tube 212 has a second specified direction X2, and the second specified direction X2 is the extension direction of the straight line where the first end and the second end of the second switch tube 212 are located. In the embodiment, the first specified direction X1 is the same as the second specified direction X2. Figure 5 In the (a) region, the first specified direction X1 is the same as the second specified direction X2, and the first switch tube 211 and the second switch tube 212 are arranged in parallel to save the layout space of the device region 20, so that the layout of the low noise amplifier 100 is more compact.

[0058] In the (b) region, the first specified direction X1 is different from the second specified direction X2, and the first switch tube 211 and the second switch tube 212 are arranged at an angle to save the layout space of the device region 20, so that the layout of the low noise amplifier 100 is more compact. Figure 5In the (b) region, the included angle between the first specified direction X1 and the second specified direction X2 is an acute angle or a right angle, so that the arrangement of the first switch tube 211 and the second switch tube 212 on the device region 20 can be more flexible, so as to reduce the layout difficulty of the low noise amplifier 100. For example, the included angle between the two can be greater than or equal to 15 degrees and less than or equal to 90 degrees. As an example, the included angle between the two can be greater than or equal to 15 degrees and less than 45 degrees; as another example, the included angle between the two can be greater than or equal to 45 degrees and less than 60 degrees; as still another example, the included angle between the two can be greater than or equal to 60 degrees and less than or equal to 90 degrees. Exemplarily, the included angle between the two can be 15 degrees, 20 degrees, 26 degrees, 30 degrees, 45 degrees, 50 degrees, 60 degrees, 75 degrees, 82 degrees, 90 degrees, and the like, which is not limited in the embodiment.

[0059] It should be noted that for the dummy tube, the dummy tube is "close" to the transistor arrangement, and the two are in parallel relationship, while in the (b) region, the dummy tube is not "close" to the transistor arrangement, and the two are not in parallel relationship. Figure 5 In the (b) region, the switch tube not connected to the low noise amplifier 100 and the switch tube connected to the low noise amplifier 100 can be arranged at a certain included angle, that is, in the arrangement of the transistors, the switch tube not connected to the low noise amplifier 100 and the dummy tube in the embodiment are not the same.

[0060] Please refer to Figure 6 The first switch tube 211 can include a first comb finger 2111 and a second comb finger 2112, and the first comb finger 2111 and the second comb finger 2112 are arranged at intervals, wherein the first comb finger 2111 is used to connect one of the source and the drain, and the second comb finger 2112 is used to connect the other of the source and the drain. Specifically, the first comb finger 2111 and the second comb finger 2112 respectively play a role of shunting the current of the first switch tube 211, so as to ensure that the functional transistor 210 can work normally in the scene of large current.

[0061] Specifically, the first comb finger 2111 and the second comb finger 2112 can respectively include a plurality of comb electrodes 2113, the plurality of comb electrodes 2113 included by the first comb finger 2111 and the plurality of comb electrodes 2113 included by the second comb finger 2112 are arranged at intervals in a preset direction P in turn and alternately, and the plurality of comb electrodes 2113 included by the same comb finger are connected to each other.

[0062] In the embodiment, the number of the comb finger electrodes 2113 included in the same comb finger piece is greater than or equal to 5. That is, the number of the comb finger electrodes 2113 included in the first comb finger piece 2111 is greater than or equal to 5, and the number of the comb finger electrodes 2113 included in the second comb finger piece 2112 is greater than or equal to 5. As an example, the number of the comb finger electrodes 2113 can be greater than or equal to 5 and less than 10; as another example, the number of the comb finger electrodes 2113 can be greater than or equal to 10 and less than or equal to 20. Exemplarily, the number of the comb finger electrodes 2113 can be 5, 8, 10, 12, 15, 18, 20, and the like, which is not limited in the embodiment.

[0063] Similarly, the second switch tube 212 can include a third comb finger piece and a fourth comb finger piece (not shown in the figure), and the third comb finger piece and the fourth comb finger piece can respectively include a plurality of comb finger electrodes (not shown in the figure), and the number of the comb finger electrodes included in the same comb finger piece is greater than or equal to 5. The related description of the third comb finger piece and the fourth comb finger piece can be referred to the description of the first comb finger piece 2111 and the second comb finger piece 2112 in the foregoing description, which is not described herein.

[0064] It should be noted that, for the dummy tube, the size of the dummy tube is usually small, and the number of the comb finger electrodes 2113 included in the dummy tube is usually less than 5, for example, the number can be equal to 3, 4, and the like. In the present application, the number of the comb finger electrodes of the first switch tube 211 and the second switch tube 212 is greater than or equal to 5, that is, it can be explained that the switch tube and the dummy tube in the embodiment which are not connected to the low noise amplifier 100 are different in the device structure of the transistor.

[0065] Please refer to Figure 2 and Figure 3 , the metal layer 30 is stacked on the device area 20, which is used to set the metal trace, the passive device (for example, the primary side trace and the secondary side trace of the transformer or the balun, the capacitor, the inductor, the resistor, and the like). In addition, the metal layer 30 is also used to set the connection port (for example, the first switch port 301, the second switch port 302, and the first signal port 321, and the like). Specifically, the metal layer 30 can be a copper layer, or an aluminum-copper alloy (AlCu) layer, and the like, which is not limited in the embodiment.

[0066] As an example, the number of the metal layer 30 can be one, so that the overall layout of the low noise amplifier 100 is more simple and compact.

[0067] As another example, as Figure 2 and Figure 3As shown, there can be multiple metal layers 30, which are stacked sequentially on the device area 20 to make the overall wiring layout of the low-noise amplifier 100 more flexible. Specifically, the number of metal layers 30 can be 2, 3, 4, 5, etc., and this embodiment does not impose a specific limitation.

[0068] Furthermore, when there are multiple metal layers 30, an insulating dielectric layer 32 is provided between two adjacent metal layers 30. On one hand, the insulating dielectric layer 32 can provide mechanical support for the different metal layers 30, ensuring the stability of the entire chip structure and providing electrical isolation. On the other hand, the insulating dielectric layer 32 can be used to set metal vias to connect passive devices located on different metal layers 30, ensuring normal transmission of radio frequency signals. Specifically, the insulating dielectric layer 32 can be a silicon-based organic material (SiCOH) layer, a silicon dioxide (SiO2) layer, etc., and this embodiment does not impose specific limitations.

[0069] In some possible embodiments, the first switch port 301, the second switch port 302, and the first signal port 321 are all located in the same metal layer 30. In this case, if it is necessary to adjust the actual circuit architecture of the low-noise amplifier 100 to connect the first signal port 321, which is connected to the output of the first amplifying tube 231, to the other of the two switch ports, only the layout of the connection traces in a single metal layer 30 needs to be modified, which can reduce the design difficulty and cost of the low-noise amplifier 100.

[0070] As an example, the plurality of metal layers 30 may include a first metal layer 310, which is the metal layer 30 with the largest distance from the device region 20 among the plurality of metal layers 30. Figure 2 In the example shown, the first switch port 301, the second switch port 302, and the first signal port 321 ( Figure 2 (Not shown) are all located in the first metal layer 310. Since the first metal layer 310 is the top metal layer of the low noise amplifier 100, it is basically exposed on the outer surface of the low noise amplifier 100 before the low noise amplifier 100 is packaged. Setting the first switch port 301, the second switch port 302 and the first signal port 321 in the first metal layer 310 makes it easier to modify the layout of the connection traces of the metal layer 30.

[0071] It is easy to understand that since the first switch port 301, the second switch port 302 and the first signal port 321 are located on the first metal layer 310, the metal connection structure located on other metal layers 30 (other metal layers located between the first metal layer 310 and the device area 20) does not need to be modified or adjusted, which can further reduce the difficulty of modifying the low noise amplifier 100.

[0072] As another example, the plurality of metal layers 30 can include a second metal layer 320, which is a metal layer 30 of the plurality of metal layers 30 adjacent to the device region 20, i.e., the second metal layer 320 is a metal layer 30 of the plurality of metal layers 30 closest to the device region 20. Specifically, the first switch port 301, the second switch port 302, and the first signal port 321 are all located in the second metal layer 320. Of course, in other possible examples, the first switch port 301, the second switch port 302, and the first signal port 321 can all be located in other metal layers 30 between the first metal layer 310 and the second metal layer 320.

[0073] In some other possible embodiments, at least two of the first switch port 301, the second switch port 302, and the first signal port 321 can be located in different metal layers 30, so that the layout of the connection ports can be more flexible. Specifically, if it is necessary to connect the first signal port 321 connected to the output end of the first amplifier tube 231 with another of the two switch ports, it is necessary to simultaneously modify the layout of the connection wires of at least two metal layers 30, so that the overall wire layout of the low-noise amplifier 100 can be adjusted more flexibly, and the case of difficult adjustment can be avoided in the case of adjusting the layout of the connection wires of a single metal layer 30.

[0074] Specifically, the present embodiment does not limit the setting positions of the first switch port 301, the second switch port 302, and the first signal port 321.

[0075] In Figure 1 In the embodiment shown, the metal layers 30 can include a first connection wire 341 connected between the first switch port 301 and the first signal port 321. Specifically, in the case where the first switch port 301 and the first signal port 321 are connected, the first low-noise power amplifier module 101 is configured to perform power amplification on the first radio frequency signal. In this case, the second switch port 302 is in an idle state.

[0076] As an implementation, the first switch port 301, the first signal port 321, and the first connection wire 341 can all be located in the first metal layer 310, which can reduce the difficulty of modifying the layout of the connection wires of the metal layers 30.

[0077] In addition, since the first metal layer 310 is a metal layer 30 located at the top layer of the low-noise amplifier 100, its thickness is much greater than that of other metal layers 30 between the first metal layer 310 and the device region 20 (for example, the second metal layer 320), so that the first metal layer 310 can be more easily modified. Figure 2The thickness of the first metal layer 310 can be greater than or equal to 2.5um, for example, the thickness of the first metal layer 310 can be 2.5um, 3um, 3.5um, 4um, 4.2um, 4.5um, 4.6um, 4.8um, 5.2um, 5.5um, 6um, etc. The thickness of the other metal layer 30 can be less than or equal to 1um, for example, the thickness of the other metal layer 30 can be 1um, 0.85um, 0.72um, 0.6um, 0.53um, 0.4um, 0.32um, 0.21um, 0.16um, etc. In some possible examples, the first metal layer 310 can be a ReDistribution Layer (RDL) layer, which is usually an aluminum layer, and the thickness of the RDL layer can be greater than or equal to 1.4um, for example, 1.4um, 1.8um, 2um, etc.

[0078] In some possible embodiments, the radio frequency chip 100 includes at least three metal layers arranged from top to bottom, wherein the first metal layer 310 arranged at the top can be a ReDistribution Layer (RDL) layer, and at least one of the second metal layer and the third metal layer arranged below the first metal layer 310 (RDL layer) can be a thick metal layer. The thickness of the second metal layer (thick metal layer 1) and / or the third metal layer (thick metal layer 2) is greater than that of the other metal layers below.

[0079] Therefore, the first switch port 301, the first signal port 321 and the first connection wire 341 are arranged in the first metal layer 310 in the present embodiment, which can improve the connection convenience of the first connection wire 341 and reduce the difficulty of layout and modification of the wire in one aspect, and can ensure the transmission efficiency of the first radio frequency signal and reduce the signal transmission loss due to the large thickness of the first metal layer 310 in another aspect.

[0080] In Figure 4 In the embodiment shown in the figure, the metal layer 30 can include a second connection wire 342 connected between the second switch port 302 and the first signal port 321. Specifically, when the second switch port 302 and the first signal port 321 are connected, the second low-noise power amplifier module 102 is configured to perform power amplification on the first radio frequency signal. In this case, the first switch port 301 is in an idle state.

[0081] As an implementation, the second switch port 302, the first signal port 321 and the second connection wire 342 can all be located in the first metal layer 310, which can reduce the difficulty of modifying the layout of the connection wire of the metal layer 30. In addition, since the thickness of the first metal layer 310 is large, the transmission efficiency of the first radio frequency signal can be ensured, and the signal transmission loss can be reduced.

[0082] It should be noted that, in order to facilitate the reader to understand, the layout positions of the plurality of transistors in Figure 1 and Figure 4 are only schematic, and cannot be directly understood as the actual layout positions in the device region 20. For example, in the actual layout in the device region 20, the first switch transistor 211, the second switch transistor 212 and the first amplifier transistor 231 can be arranged in sequence in a one-dimensional direction. In addition, in Figure 1 and Figure 4 , the structures (for example, the first connection wire 341 and the second connection wire 342) corresponding to the “solid line” can be located in the first metal layer 310; the structures corresponding to the “dashed line” can be located in the device region 20, or in other metal layers 30 between the first metal layer 310 and the device region 20.

[0083] In the embodiment, the connection structure 40 is connected between the device region 20 and the metal layer 30, and the “connection structure 40” herein should be understood as the overall structure for connecting the plurality of functional transistors 210 and the plurality of connection ports in the metal layer 30. The connection structure 40 is configured to connect the second end of the first switch transistor 211 to the first switch port 301 in the metal layer 30, connect the second end of the second switch transistor 212 to the second switch port 302 in the metal layer 30, and connect the output end of the first amplifier transistor 231 to the first signal port 321 in the metal layer 30.

[0084] In some possible embodiments, the first end of the first switch transistor 211 can also be connected to the circuit of the first low-noise power amplifier module 101 through the connection structure 40, and the first end of the second switch transistor 212 can also be connected to the circuit of the second low-noise power amplifier module 102 through the connection structure 40. The specific connection mode of the first end of the first switch transistor 211 and the first end of the second switch transistor 212 is not limited in the embodiment.

[0085] Please refer to Figure 2 and Figure 3The connecting structure 40 can include a first connecting unit 410, a second connecting unit 420, and a third connecting unit 430. The first connecting unit 410 is configured to connect the second end of the first switch tube 211 to the first switch port 301 in the metal layer 30. The second connecting unit 420 is configured to connect the second end of the second switch tube 212 to the second switch port 302 in the metal layer 30. The third connecting unit 430 is configured to connect the output end of the first amplification tube 231 to the first signal port 321 in the metal layer 30.

[0086] The first connecting unit 410, the second connecting unit 420, and the third connecting unit 430 in the embodiment are independent of each other in hardware structure, so as to connect the corresponding switch tube or amplification tube to the corresponding connecting port in the metal layer 30, avoiding signal leakage.

[0087] In some possible embodiments, the first connecting unit 410 can include a first metal via (not shown in the figure), and the second end of the first switch tube 211 is connected to the first switch port 301 in the metal layer 30 through the first metal via. Specifically, the first metal via can be located between the device region 20 and the insulating medium layer 32 in the metal layer 30, and penetrates the insulating medium layer 32. The number of the first metal via can be one or multiple, which is not limited in the embodiment. For example, the second end of the first switch tube 211 can be directly connected to the first switch port 301 through the first metal via.

[0088] In other possible embodiments, the first connecting unit 410 can include at least one first metal via and at least one first metal trace (neither of which is shown in the figure), and the second end of the first switch tube 211 is connected to the first switch port 301 through the at least one first metal via and the at least one first metal trace. Therefore, the presence of the first metal trace can make the position of the first switch port 301 on the metal layer 30 more flexible, so as to flexibly adjust the layout position of the first switch port 301 on the metal layer 30. For example, the second end of the first switch tube 211 can be connected to the first switch port 301 through the first metal via and the first metal trace in sequence. Specifically, the number of the first metal via can be one or multiple, and the number of the first metal trace can be one or multiple.

[0089] As an example, the second end of the first switch tube 211 is connected to a first metal bump in the metal layer 30 through at least one first metal via, and the first metal bump is connected to the first switch port 301 through at least one first metal trace. Here, the “metal bump” refers to a bump structure in the metal layer 30, which can play a role of metal connection.

[0090] Specifically, the number of the first metal vias can be multiple, and the multiple first metal vias are respectively located in different insulating dielectric layers 32. The first metal vias located in different insulating dielectric layers 32 can be directly connected, or the first metal vias located in different insulating dielectric layers 32 can be connected through a connection trace located on the intermediate metal layer, so as to connect the second end of the first switch tube 211 to the first metal block. The number of the first metal traces can be multiple, and the multiple first metal traces are sequentially connected, so as to connect the first metal block to the first switch port 301, and the connection between the first metal block and the first switch port 301 can be more flexible. For example, the second end of the first switch tube 211 can be sequentially connected to the first switch port 301 through the first metal via, the connection trace, and the first metal via and the first metal trace.

[0091] As another example, the number of the first metal vias can be multiple, and the multiple first metal vias are respectively located in different insulating dielectric layers 32. The first metal vias located in different insulating dielectric layers 32 are connected through a first metal trace located on the intermediate metal layer, so as to connect the second end of the first switch tube 211 to the first switch port 301. For example, the second end of the first switch tube 211 can be sequentially connected to the first switch port 301 through the first metal via, the first metal trace, and the first metal via. Specifically, the embodiment is not limited to the specific implementation of the first connection structure 410.

[0092] In some possible embodiments, the second connection unit 420 can include a second metal via (not labeled in the figure), and the second end of the second switch tube 212 is connected to the second switch port 302 in the metal layer 30 through the second metal via. Specifically, the second metal via can be located in the insulating dielectric layer 32 between the device region 20 and the metal layer 30, and penetrates the insulating dielectric layer 32. The number of the second metal via can be one or multiple, and the embodiment is not limited thereto. For example, the second end of the second switch tube 212 can be directly connected to the second switch port 302 through the second metal via.

[0093] In some possible embodiments, the second connection unit 420 can include at least one second metal via and at least one second metal trace (neither of which is shown in the figure), and the second end of the second switch tube 212 is connected to the second switch port 302 through the at least one second metal via and the at least one second metal trace. Therefore, the presence of the second metal trace can make the position of the second switch port 302 on the metal layer 30 more flexible, so as to flexibly adjust the layout position of the second switch port 302 on the metal layer 30. For example, the second end of the second switch tube 212 can be connected to the second switch port 302 through the second metal via and the second metal trace in sequence. Specifically, the number of the second metal vias can be one or more, and the number of the second metal traces can be one or more.

[0094] For example, the second end of the second switch tube 212 is connected to the second metal block of the metal layer 30 through at least one second metal via, and the second metal block is connected to the second switch port 302 through at least one second metal trace.

[0095] Specifically, the number of the second metal vias can be multiple, and the multiple second metal vias are respectively located in different insulating medium layers 32, and the second metal vias located in different insulating medium layers 32 can be directly connected, or the second metal vias located in different insulating medium layers 32 can be connected through a connection trace located on an intermediate metal layer, so as to connect the second end of the second switch tube 212 to the second metal block. The number of the second metal traces can be multiple, and the multiple second metal traces are connected in sequence, so as to connect the second metal block to the second switch port 302, which can make the connection between the second metal block and the second switch port 302 more flexible. For example, the second end of the second switch tube 212 can be connected to the second switch port 302 through the second metal via, the connection trace, and the second metal via and the second metal trace in sequence.

[0096] For another example, the number of the second metal vias can be multiple, and the multiple second metal vias are respectively located in different insulating medium layers 32, and the second metal vias located in different insulating medium layers 32 are connected through a second metal trace located on an intermediate metal layer, so as to connect the second end of the second switch tube 212 to the second switch port 302. For example, the second end of the second switch tube 212 can be connected to the second switch port 302 through the second metal via, the second metal trace, and the second metal via in sequence. Specifically, the present embodiment does not limit the specific implementation of the second connection unit 420.

[0097] In some possible embodiments, the third connection unit 430 can include a third metal via (not shown in the figure), and the output end of the first amplifying tube 231 is connected to the first signal port 321 in the metal layer 30 through the third metal via. Specifically, the third metal via can be located in the insulating medium layer 32 between the device region 20 and the metal layer 30, and penetrates the insulating medium layer 32. The number of the third metal via can be one or multiple, which is not limited in the embodiment. For example, the output end of the first amplifying tube 231 can be directly connected to the first signal port 321 through the third metal via.

[0098] In some other possible embodiments, the third connection unit 430 can include at least one third metal via and at least one third metal trace (not shown in the figure), and the output end of the first amplifying tube 231 is connected to the first signal port 321 through the at least one third metal via and the at least one third metal trace. Therefore, the presence of the third metal trace can make the position of the first signal port 321 on the metal layer 30 more flexible, so as to flexibly adjust the layout position of the first signal port 321 on the metal layer 30. For example, the output end of the first amplifying tube 231 can be connected to the first signal port 321 through the third metal via and the third metal trace in sequence. Specifically, the number of the third metal via can be one or multiple, and the number of the third metal trace can be one or multiple.

[0099] For example, the output end of the first amplifying tube 231 is connected to a third metal block of the metal layer 30 through at least one third metal via, and the third metal block is connected to the first signal port 321 through at least one third metal trace.

[0100] Specifically, the number of the third metal via can be multiple, and the multiple third metal vias are respectively located in different insulating medium layers 32. The third metal vias located in different insulating medium layers 32 can be directly connected, or the third metal vias located in different insulating medium layers 32 can be connected through a connection trace located on an intermediate metal layer, so as to connect the output end of the first amplifying tube 231 to the third metal block. The number of the third metal trace can be multiple, and the multiple third metal traces are connected in sequence, so as to connect the third metal block to the first signal port 321, which can make the connection between the third metal block and the first signal port 321 more flexible. For example, the output end of the first amplifying tube 231 can be connected to the first signal port 321 through the third metal via, the connection trace, and the third metal via and the third metal trace in sequence.

[0101] As another example, there can be multiple third metal vias, each located in a different insulating dielectric layer 32. These third metal vias in different insulating dielectric layers 32 are connected by a third metal trace located on an intermediate metal layer to connect the output of the first amplifier tube 231 to the first signal port 321. Exemplarily, the output of the first amplifier tube 231 can be connected to the first signal port 321 sequentially via a third metal via, a third metal trace, and another third metal via. Specifically, this embodiment does not limit the specific implementation of the third connection structure 430.

[0102] The following is combined Figure 1 , Figure 4 , Figure 7 and Figure 8 The circuit structure of the low-noise amplifier 100 is described below. Figure 7 for Figure 1 The circuit structure corresponding to the low-noise amplifier 100 shown is as follows: Figure 8 for Figure 4 The circuit structure corresponding to the low-noise amplifier 100 is shown.

[0103] In this embodiment, the device area 20 may also include a third switch 213, a second amplifier 232, and a third amplifier 233, which are connected to the circuit of the first low-noise power amplifier module 101. The input terminal of the second amplifier 232 is used to input a second radio frequency signal, and the second radio frequency signal has a different frequency band than the first radio frequency signal.

[0104] Therefore, when the first switch port 301 and the first signal port 321 are connected, the first low-noise power amplifier module 101 is configured to amplify the power of the first radio frequency signal and the second radio frequency signal; when the second switch port 302 and the first signal port 321 are connected, the first low-noise power amplifier module 101 is configured to amplify the power of the second radio frequency signal.

[0105] Furthermore, when the first switch port 301 and the first signal port 321 are connected, the first switch transistor 211 and the third switch transistor 213 are respectively connected to the signal branches where the first radio frequency signal and the second radio frequency signal are located. Specifically, the first switch transistor 211 is used to turn on or off the signal branch where the first radio frequency signal is located, and the third switch transistor 213 is used to turn on or off the signal branch where the second radio frequency signal is located.

[0106] Specifically, the first terminal of the third switch 213 is connected to the first terminal of the first switch 211 to form a first connection terminal K1, and the second terminal of the third switch 213 is connected to the output terminal of the second amplifier 232. The input terminal of the third amplifier 233 is used to input the bias voltage signal Vb1, the ground terminal of the third amplifier 233 is connected to the first connection terminal K1, and the output terminal of the third amplifier 233 is used to output the radio frequency signal.

[0107] In some possible embodiments, the low-noise amplifier 100 may further include a first voltage port (not shown) for providing a bias voltage signal Vb1 to ensure that the third amplifier tube 233 operates in the linear region. Exemplarily, the first voltage port may be located on the first metal layer 310, and the input terminal of the third amplifier tube 233 is connected to the first voltage port. The amplitude of the bias voltage signal Vb1 may be greater than or equal to 0.9V and less than or equal to 2V; for example, the amplitude of the bias voltage signal Vb1 may be 0.9V, 1.2V, 1.5V, 1.8V, 2V, etc.

[0108] exist Figure 1 and Figure 4 In the illustrated embodiment, the low-noise amplifier 100 may further include a first input port 121, a second input port 122, and a first output port 123. The first input port 121 is used to input a first radio frequency (RF) signal, the second input port 122 is used to input a second RF signal, and the first output port 123 is used to output the RF signal amplified by the first low-noise power amplifier module 101. Exemplarily, the first input port 121, the second input port 122, and the first output port 123 may all be located on the first metal layer 310 to ensure RF signal transmission efficiency and reduce signal transmission loss. Specifically, the input terminal of the first amplifying tube 231 is connected to the first input port 121, and the ground terminal of the first amplifying tube 231 is grounded; the input terminal of the second amplifying tube 232 is connected to the second input port 122, and the ground terminal of the second amplifying tube 232 is grounded. The output terminal of the third amplifying tube 233 is connected to the first output port 123.

[0109] exist Figure 1 and Figure 4 In the illustrated embodiment, the low-noise amplifier 100 may further include a first power supply port 124 and a first inductor 102. The first power supply port 124 is used to provide a power supply voltage VDD1 to power the components within the first low-noise power amplifier module 101. The amplitude of the power supply voltage VDD1 may be greater than or equal to 1V and less than or equal to 5V. For example, the amplitude of the power supply voltage VDD1 may be 1V, 1.1V, 1.2V, 1.8V, 2.2V, 2.5V, 2.8V, 3V, 3.3V, 4.2V, 4.5V, 5V, etc.

[0110] Specifically, one end of the first inductor 102 is connected to the first power supply port 124, and the other end of the first inductor 102 is connected to the output terminal of the third amplifier tube 233. The first inductor 102 can serve to match impedance and filter high-frequency noise. For example, at least a portion of the first power supply port 124 and the first inductor 102 can be located in the first metal layer 310 to ensure power supply efficiency.

[0111] In some possible embodiments, there are multiple third switching transistors 213 and second amplifying transistors 232, each corresponding to the other. The multiple second amplifying transistors 232 are used to input second radio frequency signals of different frequency bands. For example, the number of third switching transistors 213 and second amplifying transistors 232 can be 2, 3, 4, etc. In this case, the first low-noise power amplifier module 101 can amplify the power of multiple radio frequency signals of different frequency bands, thereby enriching the application scenarios of the low-noise amplifier 100.

[0112] Specifically, the first ends of multiple third switching transistors 213 are connected to the first end of the first switching transistor 211 to form a first connection terminal K1, and the second ends of multiple third switching transistors 213 are connected to the output terminals of multiple second amplifying transistors 232 in a one-to-one correspondence.

[0113] In this embodiment, the device area 20 may also include a fourth switch 214, a fourth amplifier 234, and a fifth amplifier 235, which are connected to the circuit of the second low-noise power amplifier module 102. The input terminal of the fourth amplifier 234 is used to input a third radio frequency signal, which has a different frequency band than the first radio frequency signal.

[0114] Therefore, when the first switch port 301 and the first signal port 321 are connected, the second low-noise power amplifier module 102 is configured to amplify the power of the third radio frequency signal; when the second switch port 302 and the first signal port 321 are connected, the second low-noise power amplifier module 102 is configured to amplify the power of both the first radio frequency signal and the third radio frequency signal.

[0115] Furthermore, when the second switch port 302 and the first signal port 321 are connected, the second switch transistor 212 and the fourth switch transistor 214 are respectively connected to the signal branches containing the first radio frequency signal and the third radio frequency signal. Specifically, the second switch transistor 212 is used to turn on or off the signal branch containing the first radio frequency signal, and the fourth switch transistor 214 is used to turn on or off the signal branch containing the third radio frequency signal.

[0116] Specifically, the first terminal of the fourth switch 214 is connected to the first terminal of the second switch 212 to form the second connection terminal K2, and the second terminal of the fourth switch 214 is connected to the output terminal of the fourth amplifier 234. The input terminal of the fifth amplifier 235 is used to input the bias voltage signal Vb2, the ground terminal of the fifth amplifier 235 is connected to the second connection terminal K2, and the output terminal of the fifth amplifier 235 is used to output the radio frequency signal.

[0117] In some possible embodiments, the low-noise amplifier 100 may further include a second voltage port (not shown) for providing a bias voltage signal Vb2 to ensure that the fifth amplifier tube 235 operates in the linear region. Exemplarily, the second voltage port may be located on the first metal layer 310, and the input terminal of the fifth amplifier tube 235 may be connected to the second voltage port. The amplitude of the bias voltage signal Vb2 may be greater than or equal to 0.9V and less than or equal to 2V; for example, the amplitude of the bias voltage signal Vb2 may be 0.9V, 1.2V, 1.5V, 1.8V, 2V, etc.

[0118] exist Figure 1 and Figure 4 In the illustrated embodiment, the low-noise amplifier 100 may further include a third input port 125 and a second output port 126. The third input port 125 is used to input a third radio frequency (RF) signal, and the second output port 126 is used to output the RF signal after power amplification by the second low-noise power amplifier module 102. Exemplarily, both the third input port 125 and the second output port 126 may be located on the first metal layer 310 to ensure RF signal transmission efficiency and reduce signal transmission loss. Specifically, the input terminal of the fourth amplifier tube 234 is connected to the third input port 125, and the ground terminal of the fourth amplifier tube 234 is grounded. The output terminal of the fifth amplifier tube 235 is connected to the second output port 126.

[0119] exist Figure 1 and Figure 4 In the illustrated embodiment, the low-noise amplifier 100 may further include a second power supply port 127 and a second inductor 104. The second power supply port 127 is used to provide a power supply voltage VDD2 to power the components within the second low-noise power amplifier module 102. The amplitude of the power supply voltage VDD2 may be greater than or equal to 1V and less than or equal to 5V. For example, the amplitude of the power supply voltage VDD2 may be 1V, 1.1V, 1.2V, 1.8V, 2.2V, 2.5V, 2.8V, 3V, 3.3V, 4.2V, 4.5V, 5V, etc.

[0120] It should be noted that the "supply voltage VDD2" here can be the same as the "supply voltage VDD1" mentioned above. In this case, the second power supply port 127 and the first power supply port 124 can be the same port, or connected to the same external power supply. Of course, "supply voltage VDD2" and "supply voltage VDD1" can also be provided by two independent power supplies, ensuring the independence of power supply to the first low-noise power amplifier module 101 and the second low-noise power amplifier module 102.

[0121] Specifically, one end of the second inductor 104 is connected to the second power supply port 127, and the other end of the second inductor 104 is connected to the output terminal of the fifth amplifier tube 235. The second inductor 104 can serve to match impedance and filter high-frequency noise. For example, at least a portion of the second power supply port 127 and the second inductor 104 can be located in the first metal layer 310 to ensure power supply efficiency.

[0122] In some possible embodiments, there are multiple fourth switching transistors 214 and fourth amplifying transistors 234, each corresponding to the other. The multiple fourth amplifying transistors 234 are used to input third radio frequency signals of different frequency bands. For example, the number of fourth switching transistors 214 and fourth amplifying transistors 234 can be 2, 3, 4, etc. In this case, the second low-noise power amplifier module 102 can amplify the power of multiple radio frequency signals of different frequency bands, thereby enriching the application scenarios of the low-noise amplifier 100.

[0123] Specifically, the first ends of the plurality of fourth switching transistors 214 are connected to the first ends of the second switching transistors 212 to form a second connection terminal K2, and the second ends of the plurality of fourth switching transistors 214 are connected one-to-one to the output terminals of the plurality of fourth amplifying transistors 234.

[0124] It should be noted that, in the process of adjusting the connection position and connection method of the connecting traces in the metal layer 30 to connect the first signal port 321 to the other of the two switch ports (i.e., the first switch port 301 and the second switch port 302), the trace length of at least one of the first inductor 102 and the second inductor 104 can be adjusted simultaneously, thereby flexibly adjusting the inductance values ​​of the first inductor 102 and the second inductor 104, making the chip design of the low noise amplifier 100 more flexible and enriching the application scenarios of the low noise amplifier 100.

[0125] Please see Figure 9 The metal layer 30 may also be provided with multiple passive devices 50. Each passive device 50 has a first terminal and a second terminal, which should be understood as the two connection terminals of the passive device 50. Specifically, the passive device 50 may be a resistor, capacitor, inductor, etc.

[0126] In this embodiment, the connection structure 40 is further configured to connect a first end of the passive device 50 to a first connection port 306 in the metal layer 30, and a second end of the passive device 50 to a second connection port 307 in the metal layer 30. At least one of the first connection port 306 and the second connection port 307 to which at least one passive device 50 is connected is not connected to the circuitry of the low-noise amplifier 100.

[0127] Therefore, in this embodiment, multiple passive devices 50 are pre-configured in the metal layer 30 of the low-noise amplifier 100, and connection ports corresponding to the passive devices 50 (i.e., the first connection port 306 and the second connection port 307) are reserved in the metal layer 30. This allows for the selective connection of some passive devices 50 to the circuit of the low-noise amplifier 100, while leaving others unconnected, based on the actual circuit architecture of the low-noise amplifier 100. Taking a resistor as an example, the resistance values ​​of the multiple resistors can be different. Resistors with target resistance values ​​can be selectively connected to the circuit of the low-noise amplifier 100 according to its circuit requirements, making the chip design of the low-noise amplifier 100 more flexible and enriching its application scenarios.

[0128] Specifically, the connection structure 40 may include a fourth connection unit and a fifth connection unit (neither shown in the figure). The fourth connection unit is configured to connect the first end of the passive device 50 to the first connection port 306 in the metal layer 30; the fifth connection unit is configured to connect the second end of the passive device 50 to the second connection port 307 in the metal layer 30. For details on the implementation of the fourth and fifth connection units, please refer to the description of the first connection structure 410 above in the specification; further elaboration will not be provided here.

[0129] As an example, the first connection port 306 and the second connection port 307 are both located in the same metal layer 30, for example, in the first metal layer 310. As another example, the first connection port 306 and the second connection port 307 may be located in different metal layers 30.

[0130] As one example, the multiple first connection ports 306 connected to the multiple passive devices 50 are all different. As another example, at least two passive devices 50 are connected to the same first connection port 306.

[0131] As one example, the multiple passive devices 50 are connected to different second connection ports 307. As another example, at least two passive devices 50 are connected to the same second connection port 307.

[0132] Specifically, this embodiment does not limit the configuration of the first connection port 306 and the second connection port 307.

[0133] Please see Figure 10 There are multiple metal layers 30, which are stacked sequentially on the device region 20. The multiple metal layers 30 may include a first metal layer 310 and a third metal layer 330. The first metal layer 310 is the metal layer 30 with the largest distance from the device region 20. The third metal layer 330 is located between the first metal layer 310 and the device region 20. Multiple passive devices 50 are disposed on the third metal layer 330. For example, a passive device 50 may be a resistor disposed on one of the third metal layers 330; or a passive device 50 may be a capacitor with its two plates disposed on two different third metal layers 330.

[0134] Specifically, the connection structure 40 is also connected between the third metal layer 330 and the first metal layer 310, and the connection structure 40 is also configured to: connect the first end of the passive device 50 to the first connection port 306 in the first metal layer 310; and connect the second end of the passive device 50 to the second connection port 307 in the first metal layer 310.

[0135] Since both the first connection port 306 and the second connection port 307 in this embodiment are located on the first metal layer 310, and the first metal layer 310 is the top metal layer of the low-noise amplifier 100, if it is necessary to add or reduce the number of passive devices 50 in the low-noise amplifier 100, or to adjust the series-parallel relationship of the passive devices 50, only the layout of the connection traces of a single metal layer 30 (i.e., the first metal layer 310) needs to be modified, which can reduce the design difficulty and cost of the low-noise amplifier 100.

[0136] Please refer to it again. Figure 9 The multiple passive devices 50 may include a first resistor 510 and a second resistor 520. The first resistor 510 is not connected to the circuit of the low-noise amplifier 100, while the second resistor 520 is connected to the circuit of the low-noise amplifier 100. The resistance value of at least one first resistor 510 and the resistance value of at least one second resistor 520 are different. Therefore, according to the circuit requirements of the low-noise amplifier 100, resistors with target resistance values ​​can be selectively connected to the circuit of the low-noise amplifier 100, making the chip design of the low-noise amplifier 100 more flexible and enriching its application scenarios.

[0137] Specifically, the first resistor 510 and the second resistor 520 can be located in the same third metal layer 330 or in different third metal layers 330. In this embodiment, the location of the first resistor 510 and the second resistor 520 is not limited.

[0138] As an example, the first connection port 306 and the second connection port 307, which are connected to the same first resistor 510, are connected to short-circuit the first resistor 510 to prevent it from being mistakenly connected to the low-noise amplifier 100 and causing malfunction, thus ensuring the normal operation of the low-noise amplifier 100. Specifically, the low-noise amplifier 100 may have a ground port (not shown in the figure), and the first connection port 306 and the second connection port 307, which are connected to the same first resistor 510, are both connected to the ground port to prevent radio frequency signals from leaking from the connection port of the first resistor 510, thus ensuring the normal operation of the low-noise amplifier 100.

[0139] Of course, in other possible embodiments, the first connection port 306 and the second connection port 307 connected to the same first resistor 510 can be in an "unused state", that is, both the first connection port 306 and the second connection port 307 are in an open state.

[0140] exist Figure 9 In the illustrated embodiment, the second resistor 520 may include a first voltage divider resistor 5210 and a second voltage divider resistor 5220. The first connection port 306 to which the first voltage divider resistor 5210 is connected is used to input the supply voltage VDD. The second connection port 307 to which the first voltage divider resistor 5210 is connected is connected to the first connection port 306 to which the second voltage divider resistor 5220 is connected to form a voltage divider port (not shown in the figure). The second connection port 307 to which the second voltage divider resistor 5220 is connected is grounded. The input terminal (i.e., the gate) of the first amplifier transistor 231 is connected to the voltage divider port.

[0141] In this embodiment, the first voltage divider resistor 5210 and the second voltage divider resistor 5220 divide the supply voltage VDD to form a bias voltage, which is then output to the gate of the first amplifier transistor 231. Therefore, different values ​​of the second resistor 520 can be selected to be connected to the circuit of the low-noise amplifier 100 to adjust the resistance values ​​of the first voltage divider resistor 5210 and the second voltage divider resistor 5220, thereby adjusting the amplitude of the bias voltage and enriching the application scenarios of the low-noise amplifier 100.

[0142] It should be noted that the first voltage divider resistor 5210 can be a single resistor or a resistor unit formed by connecting multiple second resistors 520 in series or parallel; the second voltage divider resistor 5220 can be a single resistor or a resistor unit formed by connecting multiple second resistors 520 in series or parallel, and this embodiment does not impose specific limitations. Furthermore, for the reader's convenience, in Figure 9The layout of the first resistor 510 and the multiple second resistors 520 is only schematic and should not be directly interpreted as their actual layout in the metal layer 30.

[0143] Furthermore, the voltage divider structure formed by the first voltage divider resistor 5210 and the second voltage divider resistor 5220 can not only adjust the bias voltage of the first amplifier tube 231, but also adjust the bias voltages of the second amplifier tube 232, the third amplifier tube 233, the fourth amplifier tube 234, etc. For example, the second resistor 520 may also include a third voltage divider resistor and a fourth voltage divider resistor. The third voltage divider resistor and the fourth voltage divider resistor are used to divide the supply voltage VDD, and the formed voltage divider port can be connected to the input terminal of the second amplifier tube 232 to flexibly adjust the bias voltage of the second amplifier tube 232.

[0144] This application provides a low-noise amplifier 100, which may include a device region 20, a metal layer 30, and a connection structure 40. The device region 20 may be provided with a first switching transistor 211, a second switching transistor 212, and a first amplifying transistor 231. The first terminal of the first switching transistor 211 is connected to the circuit of a first low-noise power amplifier module 101, and the first terminal of the second switching transistor 212 is connected to the circuit of a second low-noise power amplifier module 102. The input terminal of the first amplifying transistor 231 is used to input a first radio frequency signal and to amplify the power of the first radio frequency signal.

[0145] A metal layer 30 is stacked on the device region 20, and a connection structure 40 is connected between the device region 20 and the metal layer 30. The connection structure 40 is configured to connect the second end of the first switching transistor 211 to the first switching port 301 in the metal layer 30, connect the second end of the second switching transistor 212 to the second switching port 302 in the metal layer 30, and connect the output end of the first amplifying transistor 231 to the first signal port 321 in the metal layer 30. Specifically, one of the first switching port 301 and the second switching port 302 is connected to the first signal port 321, while the other of the first switching port 301 and the second switching port 302 is not connected to the circuitry of the low-noise amplifier 100.

[0146] In this embodiment, two switching transistors (i.e., a first switching transistor 211 and a second switching transistor 212) are pre-configured in the device area 20 of the low-noise amplifier 100. The first ends of the two switching transistors are respectively connected to two low-noise power amplifier modules, and the second ends of the two switching transistors are respectively connected to two switching ports (i.e., a first switching port 301 and a second switching port 302) located in the metal layer 30. This allows the first signal port 321 connected to the output of the first amplifying transistor 231 to one of the two switching ports to connect the first amplifying transistor 231 to the corresponding low-noise power amplifier module, based on the actual circuit architecture of the low-noise amplifier 100, by modifying the metal layer 30. Therefore, this embodiment allows for flexible adjustment of the circuit of the low-noise amplifier 100, making the chip design of the low-noise amplifier 100 more flexible and enriching the application scenarios of the low-noise amplifier 100.

[0147] Furthermore, during the adjustment of the circuit of the low-noise amplifier 100, only the connection position and connection method of the connection traces in the metal layer 30 need to be adjusted. There is no need to rearrange the transistors in the device area 20 (e.g., add or delete transistors, modify the connection method of transistors in the device area 20, etc.), which can save the design cost of the low-noise amplifier 100 and shorten the development cycle of the low-noise amplifier 100.

[0148] This application embodiment also provides a low noise amplifier 100, which may include a device region 20, a metal layer 30 and a connection structure 40. The device region 20 is provided with a first amplification tube 231. The input terminal of the first amplification tube 231 is used to input a first radio frequency signal and to amplify the power of the first radio frequency signal.

[0149] A metal layer 30 is stacked on the device region 20. The metal layer 30 has a first signal port 321, a first switch port 301, and a second switch port 302. A connection structure 40 is connected between the device region 20 and the metal layer 30. The connection structure 40 is configured to connect the output terminal of the first amplifying tube 231 to the first signal port 321 in the metal layer 30. One of the first switch port 301 and the second switch port 302 is connected to the first signal port 321, while the other of the first switch port 301 and the second switch port 302 is not connected to the circuitry of the low-noise amplifier 100.

[0150] In this embodiment, two switching ports (i.e., a first switching port 301 and a second switching port 302) are pre-configured in the metal layer 30 of the low-noise amplifier 100. This allows for subsequent connection of the first signal port 321, connected to the output of the first amplifying transistor 231, to one of the two switching ports by modifying the metal layer 30, according to the actual circuit architecture of the low-noise amplifier 100. Therefore, this embodiment allows for flexible adjustment of the circuit of the low-noise amplifier 100, making the chip design of the low-noise amplifier 100 more flexible and enriching its application scenarios.

[0151] Furthermore, during the adjustment of the circuit of the low-noise amplifier 100, only the connection position and connection method of the connection traces in the metal layer 30 need to be adjusted. There is no need to rearrange the transistors in the device area 20 (e.g., add or delete transistors, modify the connection method of transistors in the device area 20, etc.), which can save the design cost of the low-noise amplifier 100 and shorten the development cycle of the low-noise amplifier 100.

[0152] In some possible embodiments, the low-noise amplifier 100 may include a first low-noise power amplifier module 101 and a second low-noise power amplifier module 102, with a first switch port 301 connected to the first low-noise power amplifier module 101 and a second switch port 302 connected to the second low-noise power amplifier module 102. When the first signal port 321 and the first switch port 301 are connected, the first low-noise power amplifier module 101 is configured to amplify the power of a first radio frequency signal; when the first signal port 321 and the second switch port 302 are connected, the second low-noise power amplifier module 102 is configured to amplify the power of the first radio frequency signal.

[0153] In some possible embodiments, device region 20 is further provided with a first switch 211 and a second switch 212. The first end of the first switch 211 is connected to the circuit of the first low-noise power amplifier module 101, and the first end of the second switch 212 is connected to the circuit of the second low-noise power amplifier module 102. The connection structure 40 is also configured to connect the second end of the first switch 211 to the first switch port 301 and the second end of the second switch 212 to the second switch port 302.

[0154] Specifically, the details and implementation methods of the device region 20, metal layer 30, and connection structure 40 can be found in the detailed descriptions in the embodiments above, and will not be repeated here. Where there is no conflict, other technical features and related technical solutions in the embodiments above can be incorporated into this embodiment; however, to save space, they will not be elaborated upon here.

[0155] This application embodiment also provides a low-noise amplifier 100, which may include a device region 20, a metal layer 30, and a connection structure 40. The device region 20 is provided with a first amplifying transistor, a second amplifying transistor, a first switching transistor, a second switching transistor, and a third switching transistor. The input terminal of the first amplifying transistor is used to input a first radio frequency signal, and the input terminal of the second amplifying transistor is used to input a second radio frequency signal. The first terminals of the first switching transistor, the first terminals of the second switching transistor, and the first terminals of the third switching transistor are connected to the circuit of the low-noise amplifier 100.

[0156] For a detailed introduction and implementation of the “XX amplifying transistor” mentioned above, please refer to the detailed introduction of the “XX amplifying transistor” in the above embodiments. For a detailed introduction and implementation of the “XX switching transistor” mentioned above, please refer to the detailed introduction of the “XX switching transistor” in the above embodiments. To save space, we will not go into details here.

[0157] A metal layer 30 is stacked on the device region 20, and a connection structure 40 is connected between the device region 20 and the metal layer 30. The connection structure 40 is configured to: connect the second terminal of the first switching transistor to the first switching port in the metal layer 30; connect the second terminal of the second switching transistor to the second switching port in the metal layer 30; connect the second terminal of the third switching transistor to the third switching port in the metal layer 30; connect the output terminal of the first amplifying transistor to the first signal port in the metal layer 30; and connect the output terminal of the second amplifying transistor to the second signal port in the metal layer 30. Two of the first, second, and third switching ports are connected to the first and second signal ports respectively, and the remaining one of the first, second, and third switching ports is not connected to the circuitry of the low-noise amplifier 100.

[0158] In this embodiment, three switching transistors (i.e., a first switching transistor, a second switching transistor, and a third switching transistor) are pre-configured in the device region 20 of the low-noise amplifier 100. The first terminals of the three switching transistors can be connected to three low-noise power amplifier modules, and the second terminals of the three switching transistors are connected to three switching ports (i.e., a first switching port, a second switching port, and a third switching port) located on the metal layer 30. This allows for subsequent adjustments based on the actual circuit architecture of the low-noise amplifier 100. By modifying the metal layer 30, the first signal port connected to the output terminal of the first amplifying transistor can be connected to one of the three switching ports, thus connecting the first amplifying transistor to the corresponding low-noise power amplifier module; similarly, the first signal port connected to the output terminal of the second amplifying transistor can be connected to the other of the three switching ports, connecting the second amplifying transistor to the corresponding low-noise power amplifier module. Furthermore, the second amplifying transistor and the first amplifying transistor can be connected to different low-noise power amplifier modules. Therefore, this embodiment allows for flexible adjustments to the circuit of the low-noise amplifier 100, making the chip design of the low-noise amplifier 100 more flexible and enriching its application scenarios.

[0159] Furthermore, during the adjustment of the circuit of the low-noise amplifier 100, only the connection position and connection method of the connection traces in the metal layer 30 need to be adjusted. There is no need to rearrange the transistors in the device area 20 (e.g., add or delete transistors, modify the connection method of transistors in the device area 20, etc.), which can save the design cost of the low-noise amplifier 100 and shorten the development cycle of the low-noise amplifier 100.

[0160] In some possible embodiments, the low-noise amplifier 100 may include a first low-noise power amplifier module, a second low-noise power amplifier module, and a third low-noise power amplifier module. A first switch port is connected to the first low-noise power amplifier module, a second switch port is connected to the second low-noise power amplifier module, and a third switch port is connected to the third low-noise power amplifier module. Here, the "first low-noise power amplifier module," "second low-noise power amplifier module," and "third low-noise power amplifier module" can be regarded as three functional modules with independent inputs and outputs. Each of them can amplify the power of the input radio frequency signal and output the corresponding radio frequency signal.

[0161] Specifically, when the first signal port and the first switch port are connected, the first low-noise power amplifier module is configured to amplify the power of the first radio frequency signal; when the first signal port and the second switch port are connected, the second low-noise power amplifier module is configured to amplify the power of the first radio frequency signal; when the first signal port and the third switch port are connected, the third low-noise power amplifier module is configured to amplify the power of the first radio frequency signal. When the second signal port and the first switch port are connected, the first low-noise power amplifier module is configured to amplify the power of the second radio frequency signal; when the second signal port and the second switch port are connected, the second low-noise power amplifier module is configured to amplify the power of the second radio frequency signal; when the second signal port and the third switch port are connected, the third low-noise power amplifier module is configured to amplify the power of the second radio frequency signal.

[0162] Specifically, the details and implementation methods of the device region 20, metal layer 30, and connection structure 40 can be found in the detailed descriptions in the embodiments above, and will not be repeated here. Where there is no conflict, other technical features and related technical solutions in the embodiments above can be incorporated into this embodiment; however, to save space, they will not be elaborated upon here.

[0163] Please see Figure 11 This application also provides a radio frequency (RF) front-end module 600 and an electronic device 700 configured with the RF front-end module 600. The RF front-end module 600 is a component that integrates two or more discrete devices such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into an independent module, thereby improving integration and hardware performance, and miniaturizing the size. Specifically, the RF front-end module 600 may include the aforementioned low-noise amplifier 100.

[0164] The electronic device 700 can be a 4G or 5G communication device such as a smartphone, tablet, or smartwatch. Specifically, the electronic device 700 may include the radio frequency front-end module 600 in the above embodiments to realize the reception and transmission of radio frequency signals. In addition, with the development of 5G technology, the performance requirements of the radio frequency front-end module are becoming increasingly higher. The technical solution of this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication devices.

[0165] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0166] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0167] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0168] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0169] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0170] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A low-noise amplifier, characterized in that, include: The device area includes a first switching transistor, a second switching transistor, and a first amplifying transistor. The first terminal of the first switching transistor is connected to the circuit of the first low-noise power amplifier module, and the first terminal of the second switching transistor is connected to the circuit of the second low-noise power amplifier module. The input terminal of the first amplifying transistor is used to input a first radio frequency signal. A metal layer is stacked on the device region; as well as A connection structure is provided between the device region and the metal layer; the connection structure is configured to: connect the second end of the first switching transistor to a first switching port in the metal layer, connect the second end of the second switching transistor to a second switching port in the metal layer; and connect the output end of the first amplifying transistor to a first signal port in the metal layer. One of the first switch port and the second switch port is connected to the first signal port, while the other of the first switch port and the second switch port is not connected to the circuit of the low-noise amplifier.

2. The low-noise amplifier according to claim 1, characterized in that, The other of the first and second switch ports is not connected to the entire circuitry included in the low-noise amplifier.

3. The low-noise amplifier according to claim 1, characterized in that, The metal layer includes a first connection trace, which connects the first switch port and the first signal port; or The metal layer includes a second connection trace, which connects the second switch port and the first signal port.

4. The low-noise amplifier according to claim 1, characterized in that, When the first switch port and the first signal port are connected, the first low-noise power amplifier module is configured to amplify the power of the first radio frequency signal. When the second switch port and the first signal port are connected, the second low-noise power amplifier module is configured to amplify the power of the first radio frequency signal.

5. The low-noise amplifier according to claim 1, characterized in that, The connection structure includes a first connection unit, a second connection unit, and a third connection unit; The first connection unit is configured to connect the second end of the first switching transistor to a first switching port in the metal layer; the second connection unit is configured to connect the second end of the second switching transistor to a second switching port in the metal layer. The third connection unit is configured to connect the output of the first amplifier tube to the first signal port in the metal layer.

6. The low-noise amplifier according to claim 5, characterized in that, The first connection unit includes a first metal via, and the second end of the first switching transistor is connected to a first switching port in the metal layer through the first metal via; or / and The second connection unit includes a second metal via, and the second end of the second switching transistor is connected to a second switching port in the metal layer through the second metal via; or / and The third connection unit includes a third metal via, and the output end of the first amplifier tube is connected to the first signal port in the metal layer through the third metal via.

7. The low-noise amplifier according to claim 5, characterized in that, The first connection unit includes at least one first metal via and at least one first metal trace, and the second end of the first switch tube is connected to the first switch port through at least one first metal via and at least one first metal trace; or / and The second connection unit includes at least one second metal via and at least one second metal trace, and the second end of the first switch tube is connected to the second switch port through at least one second metal via and at least one second metal trace; or / and The third connection unit includes at least one third metal via and at least one third metal trace, and the output end of the first amplifier tube is connected to the first signal port through at least one of the third metal vias and at least one of the third metal traces.

8. The low-noise amplifier according to claim 7, characterized in that, The second end of the first switching transistor is connected to the first metal block of the metal layer through at least one first metal via, and the first metal block is connected to the first switching port through at least one first metal trace. or / and The second end of the second switch tube is connected to the second metal block of the metal layer through at least one second metal via, and the second metal block is connected to the second switch port through at least one second metal trace; or / and The output terminal of the first amplifier tube is connected to the third metal block of the metal layer through at least one of the third metal vias, and the third metal block is connected to the first signal port through at least one of the third metal traces.

9. The low-noise amplifier according to claim 1, characterized in that, The distance between the first switch and the second switch is greater than or equal to 5 μm.

10. The low-noise amplifier according to claim 1, characterized in that, The first switch transistor has a first specified direction, which is the extension direction of the straight line containing the first end and the second end of the first switch transistor. The second switch has a second specified direction, which is the extension direction of the straight line containing the first end and the second end of the second switch; wherein the angle between the first specified direction and the second specified direction is an acute angle or a right angle.

11. The low-noise amplifier according to claim 1, characterized in that, The first switching transistor includes a plurality of comb-finger electrodes, wherein the number of the comb-finger electrodes is greater than or equal to 5; or / and The second switching transistor includes a plurality of comb-finger electrodes, wherein the number of comb-finger electrodes is greater than or equal to 5.

12. The low-noise amplifier according to any one of claims 1 to 11, characterized in that, The number of metal layers is multiple, and the multiple metal layers are stacked sequentially in the device region; The first switch port, the second switch port, and the first signal port are all located in the same metal layer.

13. The low-noise amplifier according to claim 12, characterized in that, The plurality of metal layers include a first metal layer, which is the metal layer with the largest distance from the device region among the plurality of metal layers; the first switch port, the second switch port and the first signal port are all located in the first metal layer; or The plurality of metal layers includes a second metal layer, which is the metal layer adjacent to the device region among the plurality of metal layers; the first switch port, the second switch port and the first signal port are all located in the second metal layer.

14. The low-noise amplifier according to any one of claims 1 to 11, characterized in that, The metal layer is further provided with a plurality of passive devices, each passive device having a first end and a second end; The connection structure is further configured to connect a first end of the passive device to a first connection port in the metal layer, and a second end of the passive device to a second connection port in the metal layer. Wherein, at least one of the first connection port and the second connection port to which at least one of the passive devices is connected is not connected to the circuit of the low-noise amplifier.

15. The low-noise amplifier according to claim 14, characterized in that, There are multiple metal layers, and the multiple metal layers are stacked sequentially on the device region; The plurality of metal layers include a first metal layer and a third metal layer, wherein the first metal layer is the metal layer with the largest distance from the device region among the plurality of metal layers, and the third metal layer is located between the first metal layer and the device region; the plurality of passive devices are disposed on the third metal layer; The connection structure is also connected between the third metal layer and the first metal layer; the connection structure is also configured to: connect the first end of the passive device to a first connection port in the first metal layer; and connect the second end of the passive device to a second connection port in the first metal layer.

16. The low-noise amplifier according to claim 14, characterized in that, The passive devices include a first resistor and a second resistor, wherein the first resistor is not connected in the circuit of the low-noise amplifier, and the second resistor is connected in the circuit of the low-noise amplifier. Wherein, the resistance value of at least one of the first resistors and the resistance value of at least one of the second resistors are not the same.

17. The low-noise amplifier according to claim 14, characterized in that, The passive devices include a second resistor connected in the circuitry of the low-noise amplifier; The second resistor includes a first voltage divider resistor and a second voltage divider resistor. The first connection port to which the first voltage divider resistor is connected is used to input the power supply voltage. The second connection port to which the first voltage divider resistor is connected is connected to the first connection port to which the second voltage divider resistor is connected to form a voltage divider port. The second connection port to which the second voltage divider resistor is connected is grounded. The input terminal of the first amplifier tube is connected to the voltage divider port.

18. The low-noise amplifier according to any one of claims 1 to 11, characterized in that, The device area is further provided with a third switch, a second amplifier, and a third amplifier, which are connected to the circuit of the first low-noise power amplifier module; wherein, the input terminal of the second amplifier is used to input a second radio frequency signal; The first end of the third switching transistor is connected to the first end of the first switching transistor to form a first connection end, and the second end of the third switching transistor is connected to the output end of the second amplifying transistor. The input terminal of the third amplifier tube is used to input a bias voltage signal, the ground terminal of the third amplifier tube is connected to the first connection terminal, and the output terminal of the third amplifier tube is used to output a radio frequency signal.

19. The low-noise amplifier according to claim 18, characterized in that, The number of the third switching transistor and the second amplifying transistor is multiple, and they correspond one-to-one with each other; wherein, the multiple second amplifying transistors are used to input second radio frequency signals of different frequency bands; The first ends of the plurality of third switching transistors are connected to the first ends of the first switching transistors to form a first connection end, and the second ends of the plurality of third switching transistors are connected one-to-one to the output ends of the plurality of second amplifying transistors.

20. The low-noise amplifier according to any one of claims 1 to 11, characterized in that, The device area is also provided with a fourth switching transistor, a fourth amplifying transistor, and a fifth amplifying transistor. The fourth switching transistor, the fourth amplifying transistor, and the fifth amplifying transistor are connected to the circuit of the second low-noise power amplifier module. The input terminal of the fourth amplifying transistor is used to input a third radio frequency signal. The first end of the fourth switching transistor is connected to the first end of the second switching transistor to form a second connection end, and the second end of the fourth switching transistor is connected to the output end of the fourth amplifying transistor. The input terminal of the fifth amplifier tube is used to input a bias voltage signal, the ground terminal of the fifth amplifier tube is connected to the second connection terminal, and the output terminal of the fifth amplifier tube is used to output a radio frequency signal.

21. The low-noise amplifier according to claim 20, characterized in that, There are multiple fourth switching transistors and multiple fourth amplifying transistors, and they correspond one-to-one with each other; wherein, multiple fourth amplifying transistors are used to input third radio frequency signals of different frequency bands; The first ends of the plurality of fourth switching transistors are connected to the first ends of the second switching transistors to form a second connection end, and the second ends of the plurality of fourth switching transistors are connected one-to-one to the output ends of the plurality of fourth amplifying transistors.

22. A low-noise amplifier, characterized in that, include: The device area includes a first amplifier tube; the input terminal of the first amplifier tube is used to input a first radio frequency signal. A metal layer is stacked on the device area; the metal layer is provided with a first signal port, a first switch port and a second switch port; as well as A connection structure is provided between the device region and the metal layer; the connection structure is configured to connect the output terminal of the first amplifier tube to a first signal port in the metal layer. One of the first switch port and the second switch port is connected to the first signal port, while the other of the first switch port and the second switch port is not connected to the circuit of the low-noise amplifier.

23. The low-noise amplifier according to claim 22, characterized in that, The low-noise amplifier includes a first low-noise power amplifier module and a second low-noise power amplifier module, with the first switch port connected to the first low-noise power amplifier module and the second switch port connected to the second low-noise power amplifier module. When the first signal port and the first switch port are connected, the first low-noise power amplifier module is configured to amplify the power of the first radio frequency signal. When the first signal port and the second switch port are connected, the second low-noise power amplifier module is configured to amplify the power of the first radio frequency signal.

24. The low-noise amplifier according to claim 22, characterized in that, The device area is further provided with a first switching transistor and a second switching transistor; the first end of the first switching transistor is connected to the circuit of the first low-noise power amplifier module, and the first end of the second switching transistor is connected to the circuit of the second low-noise power amplifier module. The connection structure is further configured to connect the second end of the first switching transistor to the first switching port, and connect the second end of the second switching transistor to the second switching port.

25. A low-noise amplifier, characterized in that, include: The device area includes a first amplifying transistor, a second amplifying transistor, a first switching transistor, a second switching transistor, and a third switching transistor. The input terminal of the first amplifying transistor is used to input a first radio frequency signal, and the input terminal of the second amplifying transistor is used to input a second radio frequency signal; the first terminals of the first switching transistor, the first terminals of the second switching transistor, and the first terminals of the third switching transistor are connected to the circuit of the low-noise amplifier. A metal layer is stacked on the device region; as well as A connection structure is provided between the device region and the metal layer; the connection structure is configured to connect a second terminal of the first switching transistor to a first switching port in the metal layer. Connect the second terminal of the second switching transistor to the second switching port in the metal layer; connect the second terminal of the third switching transistor to the third switching port in the metal layer; connect the output terminal of the first amplifying transistor to the first signal port in the metal layer; connect the output terminal of the second amplifying transistor to the second signal port in the metal layer. Specifically, two of the first switch port, the second switch port, and the third switch port are connected to the first signal port and the second signal port in a one-to-one correspondence, and the remaining one of the first switch port, the second switch port, and the third switch port is not connected to the circuit of the low-noise amplifier.

26. The low-noise amplifier according to claim 25, characterized in that, The low-noise amplifier includes a first low-noise power amplifier module, a second low-noise power amplifier module, and a third low-noise power amplifier module. The first switch port is connected to the first low-noise power amplifier module, the second switch port is connected to the second low-noise power amplifier module, and the third switch port is connected to the third low-noise power amplifier module. When the first signal port and the first switch port are connected, the first low-noise power amplifier module is configured to amplify the power of the first radio frequency signal. When the first signal port and the second switch port are connected, the second low-noise power amplifier module is configured to amplify the power of the first radio frequency signal; With the first signal port and the third switch port connected, the third low-noise power amplifier module is configured to amplify the power of the first radio frequency signal; When the second signal port and the first switch port are connected, the first low-noise power amplifier module is configured to amplify the power of the second radio frequency signal; When the second signal port and the second switch port are connected, the second low-noise power amplifier module is configured to amplify the power of the second radio frequency signal; When the second signal port and the third switch port are connected, the third low-noise power amplifier module is configured to amplify the power of the second radio frequency signal.

27. A radio frequency front-end module, characterized in that, include: The low-noise amplifier as described in any one of claims 1 to 26.

28. An electronic device, characterized in that, include: The radio frequency front-end module as described in claim 27.

Images