Electric field sensor manufacturing method based on vertical vibration structure and electric field sensor

Abstract

The invention discloses an electric field sensor manufacturing method based on a vertical vibration structure and an electric field sensor. The method comprises the steps that a substrate layer is flatly laid on a tool table top, and an insulating material layer is flatly laid on the upper surface of the substrate layer; growing and preparing a strain metal material layer on the upper surface of the device layer; performing electrode etching on the electrode etching area to obtain a plurality of metal electrodes; metal material removal is carried out on the area except the electrode etching area on the device layer; performing electrode etching on the device layer to obtain a fixed driving electrode, a movable driving electrode and a supporting beam, and performing protective material coating on the upper surface of the device layer to form a protective material layer; performing structure etching on the bottom surface of the groove to remove the device layer material of the part; and removing the protective material layer to obtain the electric field sensor based on the vertical vibration structure. The strain material is integrated on the movable driving electrode through the optimized supporting beam design, so that efficient vertical electrostatic driving is realized, and the sensitivity and the stability of the sensor are improved.

Description

Technical Field

[0001] This invention relates to the technical field of electrical equipment, and in particular to a method for manufacturing an electric field sensor based on a vertical vibration structure and the electric field sensor itself. Background Technology

[0002] To meet the wide-area voltage measurement requirements of smart grids, existing electric field sensor technologies have primarily developed non-invasive measurement methods based on the "field-source inversion" principle. The core of these methods is to utilize MEMS electric field sensors to sense the electric field around transmission lines that is linearly related to voltage. However, traditional voltage transformers, with their inherent drawbacks of bulkiness, high cost, and inconvenient installation, are no longer suitable for wide-area deployment. In the more promising MEMS technology route, the electrostatic horizontal drive mode is strictly limited by the distance between the sensing and shielding electrodes, making it difficult to increase the vibration amplitude and thus limiting the sensitivity of the electric field sensor. The piezoelectric vertical drive mode, which can overcome amplitude limitations, suffers from poor repeatability and consistency of the core PZT thin film piezoelectric coefficient, as well as complex overall processing technology and high cost. Summary of the Invention

[0003] This invention provides a method for fabricating an electric field sensor based on a vertical vibration structure and an electric field sensor, aiming to solve the problem of poor stability in the sensing process of electric field sensors in existing technologies.

[0004] In a first aspect, embodiments of the present invention disclose a method for fabricating an electric field sensor based on a vertical vibration structure, comprising: laying a substrate layer flat on a tooling table and laying an insulating material layer flat on the upper surface of the substrate layer; laying a device layer flat on the upper surface of the insulating material layer and growing a strained metal material layer on the upper surface of the device layer; setting an electrode etching region on the device layer and etching the electrode etching region to obtain a plurality of metal electrodes; removing metal material from the area outside the electrode etching region on the device layer; etching the device layer to obtain a fixed driving electrode, a movable driving electrode, and a support beam, and coating the upper surface of the device layer with a protective material to form a protective material layer; structurally etching the substrate layer to obtain a bottom groove, with the bottom surface of the device layer serving as the bottom surface of the groove; structurally etching the bottom surface of the groove to remove the device layer material in this portion; and removing the protective material layer to obtain an electric field sensor based on a vertical vibration structure.

[0005] Furthermore, before structural etching is performed on the substrate layer to obtain a bottom groove, with the bottom surface of the device layer serving as the bottom surface of the groove, the method includes electrode etching on the device layer to obtain a shielding electrode and a sensitive electrode.

[0006] Furthermore, the shielding electrode is connected to the movable drive electrode.

[0007] Furthermore, after etching the device layer to obtain the shielding electrode and the sensitive electrode, the method includes performing structural parameter tests on the fixed driving electrode and the movable driving electrode, and determining whether the strain metal material layer meets the preset sensitive structure amplitude conditions based on the test results; if the strain metal material layer does not meet the preset deformation amplitude conditions, the strain metal material layer is subjected to adjustment etching to obtain a strain metal material layer with new dimensional parameters.

[0008] Furthermore, if the strained metal material layer does not meet the preset deformation amplitude condition, after adjusting the etching of the strained metal material layer, the method includes determining whether the deformation amplitude of the current fixed driving electrode and the movable driving electrode meets the preset sensitive structure amplitude condition; if the deformation amplitude of the current fixed driving electrode and the movable driving electrode does not meet the preset sensitive structure amplitude condition, the amplitude parameter of the sensitive electrode is adjusted.

[0009] Furthermore, after etching the device layer to obtain the fixed driving electrode, the movable driving electrode, and the support beam, the method includes testing the induction intensity of the fixed driving electrode and the movable driving electrode, and adjusting the support strength of the support beam based on the test results.

[0010] Furthermore, the protective material is made of photoresist material, which includes positive photoresist and negative photoresist.

[0011] Furthermore, the electrode etching method used to obtain several metal electrodes by etching the electrode etching area is photolithographic patterning etching.

[0012] Furthermore, the strain metal material layer is made of elemental aluminum.

[0013] Secondly, embodiments of the present invention also disclose an electric field sensor, which is prepared using the above-described method for fabricating an electric field sensor based on a vertical vibration structure.

[0014] The aforementioned method for fabricating an electric field sensor based on a vertical vibration structure and the electric field sensor itself induces initial vertical warping on the movable driving electrode, thereby overcoming the amplitude limitations of traditional horizontal electrostatic driving. This large-amplitude vertical vibration mode significantly enhances the electric field modulation depth of the sensing electrode, directly improving the sensor's sensitivity and signal-to-noise ratio. It avoids the problems of complex and inconsistent PZT piezoelectric thin film processes, and can be achieved solely using mature semiconductor MEMS processes. Therefore, it combines the advantages of low cost, high consistency, and ease of mass production, ensuring the long-term reliability of the electric field sensor. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Figure 1 This is a schematic diagram of the fabrication method of an electric field sensor based on a vertical vibration structure provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the electric field sensor structure provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the electric field sensor structure provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of another part of the structure of the electric field sensor provided in an embodiment of the present invention.

[0016] Icon labels: 1. Substrate layer; 2. Device layer; 3. Insulating layer; 4. Fixed driving electrode; 5. Movable driving electrode; 6. Strain material layer; 7. Shielding electrode; 8. Sensitive electrode; 9. Support beam; 10. Metal electrode. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0019] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0020] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0021] like Figure 1 As shown, Figure 1 This is a flowchart of a method for fabricating an electric field sensor based on a vertically vibrating structure. The method provided in this embodiment includes steps S110 to S180.

[0022] S110. Lay the substrate 1 flat on the tooling table and lay the insulating material layer flat on the upper surface of the substrate 1.

[0023] S120. The device layer 2 is laid flat on the upper surface of the insulating material layer, and a strained metal material layer is grown on the upper surface of the device layer 2.

[0024] S130. An electrode etching region is set on the device layer 2, and electrode etching is performed on the electrode etching region to obtain a number of metal electrodes 10.

[0025] S140. Remove metal material from the area outside the electrode etching area on device layer 2.

[0026] S150. Electrode etching is performed on device layer 2 to obtain fixed drive electrode 4, movable drive electrode 5 and support beam 9, and protective material is coated on the upper surface of device layer 2 to form a protective material layer.

[0027] S160. Perform structural etching on substrate layer 1 to obtain a bottom groove, with the bottom surface of device layer 2 serving as the bottom surface of the groove.

[0028] S170. Perform structural etching on the bottom surface of the groove to remove the material of device layer 2 in this part.

[0029] S180. Remove the protective material layer to obtain an electric field sensor based on a vertical vibration structure.

[0030] In a specific embodiment, in the field of wide-area voltage monitoring of smart grids, traditional electromagnetic voltage transformers are insufficient in size, cost, and installation flexibility, making it difficult to meet the needs of large-scale deployment. Therefore, a novel electric field sensor solution is needed that can achieve large-amplitude vertical vibration to improve sensitivity, while also possessing process compatibility and cost advantages. In this solution, a strain material (such as metallic Au or dielectric material Si3N4) with a significant stress difference from the underlying silicon material is grown on the surface of the movable electrode constituting the driving electrode pair. Due to stress mismatch, the movable electrode will undergo static warping upwards or downwards, causing it to be out of plane with the fixed driving electrode 4, forming an initial vertical displacement. When an AC voltage is applied between the fixed driving electrode 4 and the movable driving electrode 5, the generated electrostatic force will drive the pre-warped movable electrode to perform large-amplitude periodic vibrations in the vertical direction. This sensor is built on an SOI (Silicon-On-Insulator) wafer, with substrate layer 1 serving as the mechanical support and handle. Insulating layer 3 serves as a sacrificial layer for subsequent release of the movable structure, and device layer 2 is used to fabricate the mechanical and electrode structures of the sensor. A fixed driving electrode 4 is located on device layer 2 and is used to apply a driving voltage. A movable driving electrode 5, selectively grown with strained material on the upper surface of device layer 2, is the core component that generates vertical vibration. A shielding electrode 7 is mechanically connected to the movable driving electrode 5 and grounded, moving vertically along with it. The sensing electrode is fixed and used to sense the external electric field. A support beam 9 connects the movable structure and the fixed part, providing mechanical elasticity. An AC voltage with the same natural frequency as the movable structure is applied to the fixed driving electrode 4, driving the movable shielding electrode 7 to vibrate vertically. The periodic up-and-down movement of the shielding electrode 7 generates a periodic electric field shielding effect on the adjacent sensing electrode. When an external electric field is present, this shielding effect causes a periodic change in the induced charge on the surface of the sensing electrode. By detecting this change in charge, the strength of the external electric field can be reflected, and the voltage value on the transmission line can be calculated. An SOI wafer containing a substrate layer 1, an insulating layer 3, and a device layer 2 is selected as the starting material. A strained metal material is deposited on the surface of device layer 2, and through photolithography and etching processes, it is retained only in the predetermined area of ​​the movable driving electrode 5. The pattern of all electrodes and support beams 9 is defined again by photolithography. Device layer 2 is etched using deep reactive ion etching (DRIE) to form the fixed / movable drive electrodes 5, shielding electrodes 7, sensing electrodes, and support beams 9. Photoresist and other protective materials are spin-coated onto the surface of device layer 2 to protect the fine structure. The wafer is flipped to perform photolithography and DRIE etching from the back of substrate layer 1, forming grooves until the insulating layer 3 is exposed. The exposed insulating layer 3 is removed by wet etching (such as HF acid) to form cavities, releasing the movable structure. The protective material on the front side is removed, and the wafer is diced to obtain the individual sensor chips.The vertical vibration mode achieved through stress-induced vibration is not limited by the horizontal gap between electrodes, resulting in a much larger vibration amplitude than traditional horizontal drive. This larger amplitude means deeper electric field modulation of the sensing electrode, generating a stronger induced charge change signal, thus directly improving the sensor's sensitivity and signal-to-noise ratio. This scheme employs a mature electrostatic drive principle, avoiding the complex and inconsistent fabrication processes of PZT piezoelectric thin films. The strain materials used (such as Au, Si3N4) and process steps (photolithography, etching, thin film deposition) are standard technologies in the semiconductor and MEMS fields, facilitating large-scale, low-cost, and highly consistent mass production. The entire drive and sensing structure is based on single-crystal silicon, ensuring stable and reliable mechanical properties. The optimized support beam 9 design ensures the structure's stability under long-term vibration. Based on the stress-induced vertical vibration micro electric field sensor and its fabrication method, by integrating strain materials on the movable drive electrode 5, highly efficient vertical electrostatic drive is cleverly achieved. This significantly improves sensor sensitivity while maintaining high compatibility with standard CMOS / MEMS processes, providing a feasible technical path for developing high-performance, low-cost electric field sensors suitable for wide-area monitoring in smart grids.

[0031] In summary, the above method induces initial vertical warping on the movable driving electrode 5, thereby overcoming the amplitude limitation of traditional horizontal electrostatic driving. This large-amplitude vertical vibration mode can significantly enhance the electric field modulation depth of the sensing electrode, directly improving the sensor's sensitivity and signal-to-noise ratio. It avoids the problems of complex and inconsistent PZT piezoelectric thin film processes, and can be achieved using only mature semiconductor MEMS processes. Therefore, it has the advantages of low cost, high consistency, and ease of mass production, ensuring the long-term reliability of the sensor.

[0032] like Figures 2 to 4 As shown, further, before the bottom groove is obtained by structural etching of the substrate layer 1 and the bottom surface of the device layer 2 is used as the bottom surface of the groove, the method includes electrode etching of the device layer 2 to obtain the shielding electrode 7 and the sensitive electrode 8.

[0033] Furthermore, the shielding electrode 7 is connected to the movable drive electrode.

[0034] Furthermore, after etching the device layer 2 to obtain the shielding electrode 7 and the sensitive electrode 8, the method includes performing structural parameter tests on the fixed driving electrode 4 and the movable driving electrode, and determining whether the strain metal material layer meets the preset sensitive structure amplitude conditions based on the test results; if the strain metal material layer does not meet the preset deformation amplitude conditions, the strain metal material layer is subjected to adjustment etching to obtain a strain metal material layer with new dimensional parameters.

[0035] Specifically, before etching the back side of substrate 1 to form grooves, patterning etching of all key structures must be completed on device layer 2. This step not only defines the fixed driving electrode 4 and the movable driving electrode 5, but also simultaneously forms the shielding electrode 7 and the independent sensitive electrode 8, which are mechanically connected to them. The shielding electrode 7 and the movable driving electrode 5 are designed as an integrated movable structure to ensure that they can move vertically synchronously during driving. After completing the above electrode structure etching, the method introduces an online parameter testing and feedback adjustment step. Specifically, structural parameter testing is performed on the formed fixed driving electrode 4 and the movable driving electrode 5, focusing on measuring the static warpage height or natural vibration frequency induced by the strained metal material layer. The test results are compared with the preset sensitive structure amplitude conditions. If the deformation amplitude caused by the strained metal material layer does not meet the design requirements, an adjustment etching procedure is initiated. This procedure precisely adjusts the thickness or width and other dimensional parameters of the strained metal material layer by performing micro-etching and selective etching on the layer itself. The change in size will directly correct the stress matching relationship between it and the device layer 2, so that the initial warpage of the movable drive electrode 5 reaches the preset target, ensuring the consistency and sensitivity of the final sensor.

[0036] Furthermore, if the strained metal material layer does not meet the preset deformation amplitude condition, after adjusting the etching of the strained metal material layer, the method includes determining whether the deformation amplitude of the current fixed driving electrode 4 and the movable driving electrode 5 meets the preset sensitive structure amplitude condition; if the deformation amplitude of the current fixed driving electrode 4 and the movable driving electrode 5 does not meet the preset sensitive structure amplitude condition, the amplitude parameter of the sensitive electrode 8 is adjusted.

[0037] Specifically, after the adaptive etching of the strained metal material layer, the method also includes a secondary verification and compensation step. Specifically, it is necessary to re-determine whether the deformation amplitudes of the current fixed driving electrode 4 and the movable driving electrode 5 meet the preset sensitive structure amplitude conditions. If the current deformation amplitude still does not meet the preset conditions, a compensation adjustment mechanism is activated. This mechanism does not physically change the sensitive electrode 8 but compensates for signal attenuation caused by the driving amplitude not reaching the ideal value by adjusting the sensor's back-end signal processing parameters or calibration coefficients. For example, when a small amplitude is detected, the system can automatically increase the signal amplification factor or update the calibration curve to ensure that the final output electric field measurement value remains accurate. This ensures that even with unavoidable process deviations in the strained material layer 6, the sensor can still achieve the expected measurement accuracy and performance consistency, greatly improving product yield and reliability.

[0038] Furthermore, after etching the device layer 2 to obtain the fixed driving electrode 4, the movable driving electrode 5, and the support beam 9, the method includes testing the induction intensity of the fixed driving electrode and the movable driving electrode, and adjusting the support strength of the support beam 9 based on the test results.

[0039] Furthermore, the protective material is made of photoresist material, which includes positive photoresist and negative photoresist.

[0040] Specifically, after etching device layer 2 to form mechanical structures such as the fixed driving electrode 4, the movable driving electrode 5, and the support beam 9, this method introduces a crucial online mechanical performance testing and calibration step. At this point, the mechanical resonance characteristics of the driving structure are tested (such as resonant frequency and quality factor Q value), which directly reflect the actual support stiffness of the support beam 9. Based on the test results, the system performs personalized calibration for each sensor: for example, precisely locking the driving frequency to the measured resonant frequency, or recording the sensor's characteristic parameters for subsequent signal compensation. This calibration mechanism ensures that even with minor geometric deviations during manufacturing, each sensor can still operate in its optimal mechanical state, thus guaranteeing the consistency and reliability of product performance. Furthermore, after completing the front-side structure etching, a protective material is coated onto its surface to protect these delicate mechanical structures from damage during subsequent back-side etching and other processes. This protective material is preferably photoresist, which can be either positive or negative photoresist. Photoresist is well-suited as a temporary protective layer in this process step due to its advantages such as good coating uniformity, mature technology, easy removal, and low cost.

[0041] Furthermore, the electrode etching method used to obtain several metal electrodes 10 by etching the electrode etching area is photolithographic patterning etching.

[0042] Specifically, in the step of patterning the strained metal material layer grown on device layer 2 to form a precise metal electrode 10, the electrode etching method used is photolithographic patterning etching. This method specifically includes two core steps: First, a predetermined electrode pattern is defined in the photoresist covering the strained metal material layer using photolithography; then, etching techniques (such as wet etching or dry etching) are used to remove the metal material in the areas not protected by the photoresist, ultimately obtaining a precisely shaped metal electrode 10 structure on device layer 2 that is completely consistent with the design layout. This process method is a standard technology in semiconductor manufacturing for achieving micron- and nanometer-level patterning, ensuring the accuracy of electrode dimensions and the consistency of batch production.

[0043] Furthermore, the strained metal material layer is made of gold and / or aluminum.

[0044] Secondly, this case discloses an electric field sensor, which is prepared by the above-mentioned method for manufacturing an electric field sensor based on a vertical vibration structure.

[0045] This invention discloses a method for fabricating an electric field sensor based on a vertical vibration structure and the electric field sensor itself. The method includes: laying a substrate layer 1 flat on a tooling table and laying an insulating material layer flat on the upper surface of the substrate layer 1; laying a device layer 2 flat on the upper surface of the insulating material layer and growing a strained metal material layer on the upper surface of the device layer 2; setting electrode etching regions on the device layer 2 and etching the electrode etching regions to obtain a plurality of metal electrodes 10; removing metal material from the areas on the device layer 2 outside the electrode etching regions; etching the device layer 2 to obtain a fixed driving electrode 4, a movable driving electrode 5, and a support beam 9, and coating the upper surface of the device layer 2 with a protective material to form a protective material layer; structurally etching the substrate layer 1 to obtain a bottom groove, with the bottom surface of the device layer 2 serving as the bottom surface of the groove; structurally etching the bottom surface of the groove to remove the material of this portion of the device layer 2; and removing the protective material layer to obtain an electric field sensor based on a vertical vibration structure. The above method addresses the technical problems of small amplitude in existing horizontal electrostatic drives and high cost and complex processes in piezoelectric vertical drives by proposing a micro electric field sensor based on stress-induced vertical vibration. This involves selectively growing a strain material compatible with semiconductor processes on the surface of the movable drive electrode 5, utilizing stress mismatch to induce vertical warping, thus forming a non-coplanar structure with the fixed drive electrode 4. Through patterning processes such as photolithography, a layer of strain material highly compatible with semiconductor processes (such as metal Au or dielectric material Si3N4) is selectively deposited on the surface of the movable drive electrode 5 in the drive electrode pair. Utilizing the stress mismatch between the two materials, the movable drive electrode 5 undergoes a controllable pre-warping in the vertical direction, thereby forming a non-coplanar structure with the fixed drive electrode 4. Based on this, only an AC voltage needs to be applied to the fixed drive electrode 4 to drive the pre-warped movable structure to perform large-amplitude vertical vibration using electrostatic force. This movable structure drives the connected shielding electrode 7 to move synchronously, generating a periodic electric field shielding effect on the adjacent fixed sensing electrode. By detecting the periodic changes in charge on the surface of the sensing electrode, the external electric field strength can be accurately inferred. This method eliminates the need for piezoelectric material preparation, achieving large-amplitude vertical vibration to significantly improve sensor sensitivity, while also offering advantages such as low preparation cost, simple process, and high reliability.

[0046] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for fabricating an electric field sensor based on a vertical vibrating structure, characterized in that, The method comprises the following steps: laying a substrate layer on a workbench and laying an insulating material layer on the upper surface of the substrate layer; laying a device layer on the upper surface of the insulating material layer and preparing a strain metal material layer on the upper surface of the device layer; setting an electrode etching area on the device layer and performing electrode etching on the electrode etching area to obtain a plurality of metal electrodes; removing metal material from the area on the device layer other than the electrode etching area; performing electrode etching on the device layer to obtain a fixed driving electrode, a movable driving electrode and a support beam, and coating a protective material on the upper surface of the device layer to form a protective material layer; performing structure etching on the substrate layer to obtain a bottom groove, and the bottom surface of the device layer serving as the bottom surface of the groove; performing structure etching on the bottom surface of the groove to remove the device layer material in this part; removing the protective material layer to obtain an electric field sensor based on a vertical vibration structure.

2. The method of claim 1, wherein the method further comprises: Before the step of performing structure etching on the substrate layer to obtain a bottom groove and the bottom surface of the device layer serving as the bottom surface of the groove, the method comprises: performing electrode etching on the device layer to obtain a shielding electrode and a sensitive electrode.

3. The method of claim 2, wherein the method further comprises: The shielding electrode is connected with the movable driving electrode.

4. The method of claim 2, wherein the vertical vibration structure-based electric field sensor is fabricated by the steps of: After the step of performing electrode etching on the device layer to obtain a shielding electrode and a sensitive electrode, the method comprises: performing structure parameter testing on the fixed driving electrode and the movable driving electrode, and determining whether the strain metal material layer meets a preset sensitive structure amplitude condition according to the testing result information; if the strain metal material layer does not meet the preset deformation amplitude condition, performing adjustment etching on the strain metal material layer to obtain the strain metal material layer with new size parameters.

5. The method of claim 4, wherein the method further comprises: After the step of performing adjustment etching on the strain metal material layer if the strain metal material layer does not meet the preset deformation amplitude condition, the method comprises: determining whether the deformation amplitude of the current fixed driving electrode and the movable driving electrode meets the preset sensitive structure amplitude condition; if the deformation amplitude of the current fixed driving electrode and the movable driving electrode does not meet the preset sensitive structure amplitude condition, performing amplitude parameter adjustment on the sensitive electrode.

6. The method of claim 3, wherein the vertical vibration structure-based electric field sensor is fabricated by the steps of: After the step of performing electrode etching on the device layer to obtain a fixed driving electrode, a movable driving electrode and a support beam, the method comprises: testing the induction intensity of the fixed driving electrode and the movable driving electrode, and adjusting the support strength of the support beam according to the testing result information.

7. The method of claim 3, wherein the method further comprises: The protective material is made of photoresist material, and the photoresist includes positive photoresist and negative photoresist.

8. The method of claim 1, wherein the method further comprises: The electrode etching method used in the step of performing electrode etching on the electrode etching area to obtain a plurality of metal electrodes is a photoetching patterning etching method.

9. The method of claim 1, wherein the method further comprises: The strain metal material layer is made of aluminum single element material.

10. An electric field sensor, characterized by The electric field sensor is prepared by using the method for manufacturing an electric field sensor based on a vertical vibration structure according to any one of claims 1-9.

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