A fully optically modulated photoelectric synaptic device, its fabrication method and application

CN121586378BActive Publication Date: 2026-05-26ZHEJIANG UNIV
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Patent Information

Application Number
CN202610107035.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-01-27
Publication Date
2026-05-26
Estimated Expiration
2046-01-27

AI Technical Summary

Technical Problem

Existing optically controlled synaptic devices struggle to simulate the complex bidirectional plasticity of biological synapses, especially the non-monotonic photocurrent variations in the ultraviolet to visible light range.

Method used

By employing indium gallium zinc oxide nanofibers and poly(3-hexylthiophene) heterojunction structures, nonlinear photoelectric coupling is achieved through a combination of ultraviolet and visible light irradiation, simulating the behavior of biological synapses.

Benefits of technology

It achieves non-monotonic photoelectric response in the ultraviolet and visible light bands, simulates the complex plasticity of biological synapses, and provides multimodal sensing and dynamic regulation capabilities.

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Abstract

This invention discloses a fully optically modulated photoelectric synaptic device, its fabrication method, and its applications. This device successfully simulates the synaptic behavior of nerve cells within the ultraviolet to visible light spectrum. Furthermore, the device exhibits positive responses to both ultraviolet and visible light, with an increase in photocurrent. However, when irradiated with ultraviolet light first and then with visible light, the visible light inhibits the photocurrent generated by the ultraviolet light, causing a rapid decrease in photocurrent.
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Citation Information

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