An electrode device

Abstract

This invention provides an electrode device relating to the field of vacuum imaging. The electrode device includes: two support components disposed opposite to each other in a first direction, each support component having a first mounting groove and a second mounting groove spaced apart in a second direction orthogonal to the first direction; two flat plate electrodes, one flat plate electrode having its two ends respectively inserted into the two first mounting grooves, and the other flat plate electrode having its two ends respectively inserted into the two second mounting grooves; wherein the parallelism of the first mounting groove and the second mounting groove is configured to be <0.005 mm, and the flatness of the inner walls of the first mounting groove and / or the second mounting groove facing each other along the second direction is configured to be <0.005 mm, so that a uniform electric field can be generated between the two flat plate electrodes after energization, and the uniform electric field is used to modulate the quantum state of the qubit located between the two flat plate electrodes.

Description

Technical Field

[0001] This invention relates to the fields of vacuum mechanics and optical imaging, and particularly to an electrode device. Background Technology

[0002] The fabrication, manipulation, and detection of qubits (such as ultracold Rydberg atoms and polar molecules) in a vacuum is an important technological approach for quantum computing and quantum simulation. One key technique is to use electrode rods and plate electrodes to generate electric fields to modulate long-range interactions between Rydberg atoms and polar molecules.

[0003] In the ultracold Rydberg atom system, its quantum states are particularly sensitive to external electric fields, requiring shielding against interference from the ambient electric field. Electrodes with controllable voltages can be placed around it to effectively reduce the noise impact of the ambient electric field. On the other hand, the long-range interaction between Rydberg atoms can be modulated by the electric field to adjust the Stark energy shift. When tuned to the Forster resonance state, the energy coupling rate of the dipole interaction between two Rydberg states reaches its maximum value, which can be used to fabricate logic gates with high fidelity. This is the cornerstone of realizing quantum computing.

[0004] In polar molecular systems, there is significant inelastic loss between molecules, which limits the effective working time of molecular quantum computing and quantum simulations. Applying a uniform, large electric field induces polarization in molecules, effectively reducing inelastic collision losses and increasing the lifetime of molecules within the system. This technique can effectively extend the coherence time of polar molecular quantum computing and quantum simulation systems, thereby constructing a stable quantum computing platform. To achieve a long lifetime, electric field-induced collision shielding can be used, typically requiring a uniform electric field on the order of kV / cm.

[0005] Currently, mainstream ultracold Rydberg atomic and polar molecular platforms internationally generally employ intracavity rod-shaped electrodes to generate the controllable electric field. However, the large curvature of the electric field generated by such electrodes can disrupt the uniformity of quantum state energies in atomic or molecular arrays, thus limiting the scalability of quantum computing and simulation platforms. To address the uniformity issue, some research groups have placed planar electrodes outside the vacuum cavity. While this design provides a more uniform electric field, it presents new limitations: first, when a strong electric field is required, the cavity glass generates a significant induced electric dipole moment, leading to instability of the electric field at atomic positions; second, the low breakdown voltage of the air dielectric between the electrodes limits the upper limit of the applicable electric field. These issues collectively make it difficult for this approach to achieve precise and robust quantum state control. Summary of the Invention

[0006] In view of this, the present invention provides an electrode device installed in the vacuum chamber of a quantum computing device, characterized in that the electrode device comprises:

[0007] Two support components are arranged opposite each other in a first direction. Each support component has a first mounting groove and a second mounting groove spaced apart in a second direction orthogonal to the first direction. The projections of the first mounting grooves of the two support components in the first direction coincide, and the projections of the second mounting grooves of the two support components in the first direction coincide.

[0008] Two flat plate electrodes, one of which has its two ends inserted into the two first mounting slots respectively, and the other of which has its two ends inserted into the two second mounting slots respectively.

[0009] The parallelism of the first mounting groove and the second mounting groove is configured to be <0.005mm, and the flatness of the side surface of the first mounting groove and / or the second mounting groove along the second direction is configured to be <0.005mm, so that a uniform electric field can be generated between the two plate electrodes after energization. The uniform electric field is used to control the quantum state of the quantum bit located between the two plate electrodes.

[0010] According to an embodiment of the present invention, in a first direction, the two aforementioned support components respectively form a first channel to allow an external first laser to be incident between the two planar electrodes;

[0011] At least one of the two aforementioned planar electrodes has a first surface and a second surface that are opposite to each other in a second direction, and a second channel that penetrates the first surface and the second surface, the second channel being adapted to allow an external second laser to pass through along the second direction;

[0012] An external third laser is incident between the two planar electrodes along a third direction, which is orthogonal to the first direction and the second direction, respectively.

[0013] The first laser, the second laser, and the third laser described above are suitable for forming an optical lattice, which is used to trap the aforementioned qubits.

[0014] According to an embodiment of the present invention, multiple pairs of first mounting posts are formed on the two aforementioned support components, each pair of first mounting posts having overlapping projections in a first direction and located between a first mounting groove and a second mounting groove in a second direction;

[0015] One of the first mounting posts in each pair is mounted on one support assembly, and the other first mounting post is mounted on the other support assembly;

[0016] The aforementioned electrode device also includes:

[0017] Multiple first rod-shaped electrodes are respectively disposed on multiple pairs of first mounting posts, and the multiple first rod-shaped electrodes are suitable for adjusting the electric field of the aforementioned quantum bits.

[0018] According to an embodiment of the present invention, the projection of the second channel onto a preset plane is located at the center of the projection of the plurality of first rod-shaped electrodes onto the preset plane, and the preset plane is the plane where the plate electrode is located.

[0019] According to an embodiment of the present invention, the first rod-shaped electrode is misaligned with the first laser, the second laser, and the third laser.

[0020] According to an embodiment of the present invention, the above-mentioned support component includes:

[0021] First Installation Department;

[0022] The second mounting portion protrudes from the first mounting portion in a second direction. The first channel, the first mounting groove, and the second mounting groove are respectively formed in the second mounting portion, and in the second direction, the first channel is located between the first mounting groove and the second mounting groove.

[0023] The aforementioned qubits generate fluorescence signals under the action of an external fourth laser, and an external imaging device images the aforementioned qubits based on the fluorescence signals.

[0024] The parallelism between the mounting surface of the first mounting part and the second mounting groove is configured to enable an external imaging device to distinguish individual fluorescence signals.

[0025] According to an embodiment of the present invention, the electrode device further includes:

[0026] Two second rod-shaped electrodes, each corresponding one-to-one with two flat plate electrodes;

[0027] The second mounting portion has a first mounting surface and a second mounting surface that are opposite to each other in a first direction. The first mounting surfaces of the two second mounting portions face each other in a first direction. A second mounting post is formed on the second mounting surface of one of the second mounting portions. The first end of the second rod-shaped electrode passes through the second mounting post and is connected to the conductive portion of the corresponding flat plate electrode to supply power to the flat plate electrode.

[0028] According to an embodiment of the present invention, the first mounting post penetrates the second mounting portion, and both ends of the first rod-shaped electrode extend from a pair of mounting posts respectively;

[0029] The aforementioned electrode device also includes:

[0030] Multiple fixed rings are spaced apart, and multiple third mounting posts are arranged circumferentially on the fixed rings;

[0031] The first rod-shaped electrode includes a first part located between the two plate electrodes and a second part extending to the support assembly and toward the fixing ring, the second part being connected to a third mounting post.

[0032] And / or, the second end of the second rod-shaped electrode, which is opposite to the first end, is connected to one of the third mounting posts.

[0033] According to an embodiment of the present invention, the above-mentioned support component further includes:

[0034] Multiple pairs of fixing parts are disposed on the end face of the support component facing another support component. Each pair of fixing parts includes at least two fixing parts. The at least two fixing parts are disposed on both sides of the first mounting groove or the second mounting groove, and the flat plate electrode abuts against the opposite end faces of the at least two fixing parts.

[0035] According to an embodiment of the present invention, the above-mentioned planar electrode includes:

[0036] Transparent substrate;

[0037] Two antireflective coating layers are disposed on both sides of the transparent substrate;

[0038] A transparent conductive film layer is disposed on one of the aforementioned antireflective film layers.

[0039] According to an embodiment of the present invention, by controlling the parallelism of the first mounting slot and the second mounting slot, the two plate electrodes are precisely aligned. After being energized, a uniform electric field can be formed between each plate electrode, which can stably control the quantum state of the quantum bit and avoid quantum state manipulation errors caused by uneven electric field. At the same time, it can also meet the high sensitivity requirements of quantum systems such as ultracold Rydberg atoms and polar molecules. Attached Figure Description

[0040] The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0041] Figure 1 A perspective view of an electrode device provided according to an embodiment of the present invention is shown.

[0042] Figure 2 A perspective view of a support component provided according to an embodiment of the present invention is shown.

[0043] Figure 3 A perspective view of a support component provided according to another embodiment of the present invention is shown.

[0044] Figure 4 A schematic diagram of an optical lattice provided according to an embodiment of the present invention is shown.

[0045] Figure 5 A schematic diagram of the installation of the electrode device according to an embodiment of the present invention in a vacuum chamber is shown.

[0046] Figure 6 A front view of a planar electrode provided according to an embodiment of the present invention is shown.

[0047] Figure 7 A perspective view of a planar electrode provided according to an embodiment of the present invention is shown.

[0048] Figure 8 A perspective view of a first rod-shaped electrode provided according to an embodiment of the present invention is shown.

[0049] Figure 9 A perspective view of a second rod-shaped electrode provided according to an embodiment of the present invention is shown.

[0050] Figure 10 A perspective view of a fixing ring provided according to an embodiment of the present invention is shown.

[0051] Explanation of reference numerals in the attached figures

[0052] 1-Support assembly; 11-First mounting slot; 12-Second mounting slot; 13-First channel; 14-First mounting post; 15-First mounting part; 151-Optical mounting surface; 16-Second mounting part; 17-Second mounting post; 18-Fixing part; 2-Plate electrode; 21-Second channel; 22-Transparent substrate; 23-Antireflective coating layer; 24-Transparent conductive film layer; 25-Groove; 3-First rod electrode; 4-Second rod electrode; 41-First end; 5-Fixing ring; 51-Third mounting post; 52-Through hole; 6-M4 vacuum perforated screw; 8-Objective lens; 9-Flange; 10-Window. Detailed Implementation

[0053] According to embodiments of the invention, placing the planar electrode inside a vacuum chamber presents significant challenges. On one hand, securing the planar electrode is difficult; if glue is used, its evaporation and gasification will affect the ultra-high vacuum environment inside the chamber. On the other hand, before quantum computing, the vacuum chamber of the quantum computing device requires a series of operations, including sealing, evacuation, and baking. If welding or other methods are used to assemble the planar electrode, stress will be generated during the welding of the support components, sealing the vacuum chamber, evacuating the chamber, and baking the vacuum chamber, leading to deformation of the planar electrode. Therefore, to ensure uniform electric fields and high-resolution optical imaging under ultra-high vacuum, special design and strict size and material limitations are required for the support components and the planar electrode, ensuring that the mechanically fitted planar electrode can withstand vacuum evacuation and baking.

[0054] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the invention for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0055] Figure 1 A perspective view of an electrode device provided according to an embodiment of the present invention is shown.

[0056] Figure 2 A perspective view of a support component provided according to an embodiment of the present invention is shown.

[0057] like Figures 1-2 As shown, the electrode device is installed in the vacuum chamber of a quantum computing device. The electrode device includes two support components 1 and two flat plates 2 arranged opposite each other in a first direction. Each support component 1 has a first mounting groove 11 and a second mounting groove 12 spaced apart in a second direction orthogonal to the first direction. The projections of the first mounting grooves 11 of the two support components 1 in the first direction coincide, and the projections of the second mounting grooves 12 of the two support components 1 in the first direction also coincide. The two ends of one flat plate electrode 2 are respectively inserted into the two first mounting grooves 11, and the two ends of the other flat plate electrode 2 are respectively inserted into the two second mounting grooves 12. The parallelism of the first mounting grooves 11 and the second mounting grooves 12 is configured to be <0.005 mm, and the flatness of the inner walls of the first mounting grooves 11 and / or the second mounting grooves 12 facing each other along the second direction is configured to be <0.005 mm, so that a uniform electric field can be generated between the two flat plate electrodes 2 after energization. This uniform electric field is used to modulate the quantum state of the qubit located between the two flat plate electrodes 2.

[0058] According to an embodiment of the present invention, by controlling the parallelism of the first mounting groove 11 and the second mounting groove 12, and the flatness of the inner walls of the first mounting groove 11 and / or the second mounting groove 12 facing each other along the second direction, it can be ensured that the parallelism angle tolerance between the first mounting groove 11 and the second mounting groove 12 is less than 80 arcsec. The projections of the first mounting grooves 11 of the two support components 1 in the first direction coincide, and the projections of the second mounting grooves 12 of the two support components 1 in the first direction coincide, ensuring that the two plate electrodes 2 are aligned and kept parallel, so as to ensure that a uniform electric field can be formed between the two plate electrodes 2 after energization. In this way, the quantum state of the qubit can be stably controlled by the uniform electric field, avoiding the manipulation error of the quantum state caused by the non-uniform electric field. At the same time, it can also adapt to the high sensitivity requirements of quantum systems such as ultracold Rydberg atoms and polar molecules.

[0059] According to an embodiment of the present invention, the surface of the plate electrode 2 is conductive. Furthermore, the parallelism of the two opposing surfaces of the plate electrode 2 in a free state is <10 arcsec, and the thickness tolerance of the plate electrode 2 is 0 to -0.005 mm. This plate electrode 2 is, for example, a commercially available product or can be obtained through commercial channels.

[0060] According to an embodiment of the present invention, the thickness of the flat plate electrode 2 must be consistent with the height of the first mounting groove 11 and the second mounting groove 12 in the second direction. The thickness of the flat plate electrode 2 can be, for example, 1 mm. The flat plate electrode 2 is fixed by insertion into the first mounting groove 11 and the second mounting groove 12 without the need for glue or welding, thus avoiding the evaporation of glue gas that pollutes the vacuum environment, ensuring the stability of the vacuum degree inside the vacuum chamber, and avoiding deformation of the flat plate electrode 2 caused by assembly stress.

[0061] According to an embodiment of the present invention, the above-mentioned support component further includes: a plurality of pairs of fixing parts 18, disposed on the end face of the support component 1 facing another support component 1, each pair of fixing parts 18 including at least two fixing parts 18, the at least two fixing parts 18 being disposed on both sides of the first mounting groove 11 or the second mounting groove 12, and the flat plate electrode 2 abutting against the opposite end faces of the at least two fixing parts 18.

[0062] Multiple pairs of fixing parts 18 are symmetrically arranged on both sides of the first mounting groove 11 or the second mounting groove 12, which can support the flat plate electrode 2. Together with the support assembly 1, they further ensure the parallelism of the two flat plate electrodes 2, laying the structural foundation for the generation of a uniform electric field between the two flat plate electrodes 2. The dimensional tolerance range of the first mounting groove 11, the second mounting groove 12 and the fixing parts 18 is all +0.005~0mm, so that the two flat plate electrodes 2 can be smoothly installed on the two support assemblies 1, and the stability of the two flat plate electrodes 2 on the two support assemblies 1 can also be guaranteed.

[0063] Figure 3 A perspective view of a support component provided according to another embodiment of the present invention is shown.

[0064] Combination Figure 1 , Figure 2 and Figure 3 As shown, the support component 1 includes a first mounting portion 15 and a second mounting portion 16. The second mounting portion 16 protrudes from the first mounting portion 15 in a second direction. A first channel 13, a first mounting groove 11, and a second mounting groove 12 are respectively formed in the second mounting portion 16, and in the second direction, the first channel 13 is located between the first mounting groove 11 and the second mounting groove 12. Schematably, the first mounting groove 11 and the second mounting groove 12 are each approximately 5 mm from the center of the second mounting portion 16. At this size, an electric field on the order of kV / cm can be easily generated, meeting the control requirements of qubits.

[0065] According to embodiments of the present invention, reference continues. Figure 1 , Figure 2 and Figure 3 In the first direction, the two support components 1 respectively form a first channel 13 to allow an external first laser to be incident between the two planar electrodes. It should be noted that the second mounting portion 16 forms an optical channel at each end along the third direction, and the first laser can also enter between the two planar electrodes 2 from the optical channels at both ends of the second mounting portion 16 along the third direction. At least one of the two planar electrodes 2 has a first surface and a second surface opposite to each other in the second direction, and a second channel 21 penetrating the first surface and the second surface. The second channel 21 is adapted to allow an external second laser to pass through along the second direction. An external third laser is incident between the two planar electrodes 2 along the third direction, which is orthogonal to the first direction and the second direction, respectively. The first laser, the second laser, and the third laser are adapted to form an optical lattice, which is used to achieve the trapping of qubits.

[0066] Figure 4 A schematic diagram of an optical lattice provided according to an embodiment of the present invention is shown.

[0067] like Figure 4 As shown, the optical lattice L consists of multiple lattice points M, each of which traps a qubit H.

[0068] According to embodiments of the present invention, please continue to refer to Figure 1 , Figure 2 and Figure 3 The laser power used to form the optical lattice is generally relatively high. The projection of the first channel 13 onto the target plane can be, for example, a quincunx shape. The quincunx shape has more optical paths and is also beneficial for the passage of the first laser with high power and strong focusing ability. The target plane is a plane perpendicular to the first direction. A second channel 21 is formed on at least one plate electrode 2. The second channel 21 allows an external second laser with higher power to pass along the second channel 21, which can avoid the thermal deformation of the plate electrode 2 caused by absorbing laser energy when the second laser directly penetrates the plate electrode 2, thus avoiding affecting the flatness of the surface of the plate electrode 2.

[0069] The periodic optical field structure (i.e., optical lattice) formed by the interference of the first, second, and third lasers can confine microscopic particles such as ultracold Rydberg atoms and polar molecules using the optical field gradient force, arranging them periodically according to the lattice. Its core function is to provide a stable single-particle confinement platform for the manipulation of qubits (microscopic particles such as ultracold Rydberg atoms and polar molecules), thereby meeting the needs of manipulating individual qubits in quantum computing.

[0070] According to an embodiment of the present invention, the projection of the second channel 21 onto the target plane can be, for example, a circle. The diameter of the circle needs to be slightly larger than twice the beam diameter of the second laser to prevent the second channel from trunculating the second laser. Simultaneously, the diameter of the circle should not be too large, otherwise it will affect the electric field uniformity between the two plate electrodes 2. Schematic, when the diameter of the circle is set to 1 mm, finite element simulation calculations verify that under an electrostatic field environment of 4 kV / cm, with the center of the two second channels 21 as the center, within a diameter range of 100 μm, the electric field variation is less than 4 mV / cm (i.e., 1 ppm), fully meeting the requirements of quantum computing for electric field uniformity.

[0071] To effectively detect the evolved quantum state of qubits in quantum computing, spatially resolved (optically high-resolution) imaging of individual qubits within a vacuum chamber is also required. In optically high-resolution imaging of qubits, in addition to using the first, second, and third lasers to form an optical lattice to localize (trap) the qubits, an additional fourth laser is needed. Specifically, the principle of achieving optically high-resolution imaging is as follows: the qubits generate fluorescence signals under the action of the external fourth laser, and the external imaging device images the fluorescence signals, thereby achieving resolution of individual qubits. In the optical lattice, the distance between two adjacent qubits is on the order of hundreds of nanometers. Therefore, to achieve this high-resolution imaging, the electrode device needs to meet three main conditions: first, the numerical aperture of the electrode device must exceed 0.6; second, the parallelism between the plate electrode 2 and the window surface of the vacuum chamber must be less than 100 arcsec; and third, the peak-to-valley difference of the transmitted wavefront phase difference of the plate electrode 2 after installation must be less than λ1 / 4, where λ1 is the wavelength of the fluorescence, which can be, for example, 589 nm or 780 nm. The following will provide a detailed explanation of each of the three points mentioned above.

[0072] According to an embodiment of the present invention, the numerical aperture of the electrode device is related to the imaging numerical aperture (NA) at the center of the plate electrode 2. The main factors affecting the imaging numerical aperture at the center of the plate electrode 2 include: the center distance between the plate electrode 2 and the second mounting portion 16, the length of the plate electrode 2 along the first direction, and the length and width of the plate electrode 2. Specifically, the fluorescence signal emitted by the qubit will pass through one of the plate electrodes 2, which requires that the length of the plate electrode 2 along the first direction and the width along the third direction be greater than the numerical aperture of a single fluorescence signal. The shorter the center distance between the plate electrode 2 and the second mounting portion 16, the smaller the length and width of the plate electrode 2 can be.

[0073] According to an embodiment of the present invention, the center distance between the flat plate electrode 2 and the second mounting part 16 is 5 mm, the length of the flat plate electrode 2 along the first direction is 62 mm, and the length along the third direction is 22 mm, which can achieve an imaging numerical aperture (NA) greater than 0.75 at the center of the two flat plate electrodes 2. This imaging numerical aperture can meet the requirement that the numerical aperture of the electrode device exceeds 0.6.

[0074] Figure 5 A schematic diagram of the installation of the electrode device according to an embodiment of the present invention in a vacuum chamber is shown.

[0075] like Figure 1 , Figure 2 and Figure 5 As shown, the window 10 of the vacuum chamber is mounted on the flange 9, which can be, for example, a CF125. Two support assemblies 1 are located on both sides of the window 10 in the radial direction, and the two support assemblies 1 support the two flat electrode 2 on the window 10. The first mounting part 15 of the support assembly 1 is mounted on the flange 9 by an M4 vacuum perforated screw 6. The first mounting part has an optical mounting surface 151, which is the surface that contacts the flange 9. The contact surface between the flange 9 and the first mounting part 15 is the flange 9 connection surface. The fluorescence signal generated by the qubit is collected by the objective lens 8. It should be noted that the diameter of the window needs to be larger than the numerical aperture of the fluorescence signal, and the window 10 also needs to ensure that the peak-to-valley difference of the transmitted wavefront phase difference is less than λ1 / 4, and the numerical aperture (NA) of the objective lens is greater than 0.6 to meet the requirements of high-resolution imaging.

[0076] Please refer to Figure 1 and Figure 2 and Figure 5 In order to achieve a parallelism of less than 100 arcsec between the flat plate electrode 2 and the window surface of the vacuum chamber, it is necessary to ensure that the parallelism between the optical mounting surface 151 and the second mounting groove 12 is less than 0.005mm, the parallelism between the optical mounting surface 151 and the window surface is less than 100 arcsec, and the projection of the second mounting groove 12 in the first direction coincides.

[0077] According to an embodiment of the present invention, to ensure that the peak-to-valley difference of the transmitted wavefront phase difference of the plate electrode 2 after installation is <λ1 / 4, it is necessary to avoid deformation of the plate electrode 2 after installation. If the plate electrode 2 deforms after installation, it will cause large wavefront distortion and aberration introduction in the fluorescence signal, resulting in blurred imaging details and a sharp drop in resolution, making it difficult to meet the requirements of high-resolution imaging. To avoid deformation of the plate electrode 2 after installation, the flatness of the inner wall of the second mounting groove 12 facing each other along the second direction is configured to be <0.005mm, and the projections of the second mounting grooves 12 of the two support components coincide in the first direction. In addition, the plate electrode 2 also needs to have a specific structure and size and use specific materials, which are described below in conjunction with Figure 6 and Figure 7 Please provide a detailed explanation.

[0078] Figure 6 A front view of a planar electrode provided according to an embodiment of the present invention is shown.

[0079] Figure 7 A perspective view of a planar electrode provided according to an embodiment of the present invention is shown.

[0080] like Figures 6-7 As shown, the planar electrode 2 includes: a transparent substrate 22, an antireflective coating layer 23, and a transparent conductive coating layer 24. The thickness of the transparent substrate 22 is approximately 0.995 mm, with a thickness tolerance of +0 to -0.005 mm, providing a margin for depositing the antireflective coating layer 23 and the transparent conductive coating layer 24.

[0081] The transparent substrate 22 can be made of materials such as Corning HPFS 7980 fused silica, which has minimal light absorption and birefringence, meeting high vacuum requirements and is often used as a window material for vacuum chambers. The transparent substrate 22 can also be made of other materials with high optical transmittance, low birefringence, easy surface flatness, and the ability to be used in ultra-high vacuum rings.

[0082] According to an embodiment of the present invention, the surface parallelism of the transparent substrate 22 of the planar electrode 2 in its free state is <10 arcsec. With the center of the transparent substrate 22 as the center, within a 15mm diameter region, the peak-to-valley difference in the surface flatness of the transparent substrate 22 is <λ² / 10, where λ² is 632nm (the standard test wavelength of the interferometer); the surface roughness of the transparent substrate 22 is <10nm RMS, and the surface quality is 20-10. The transparent substrate 22 is, for example, a commercially available product or can be obtained through commercial channels. Its peak-to-valley difference in surface flatness at the time of manufacture can be measured using an interferometer to ensure that this parameter meets <λ² / 10. Specifically, the peak-to-valley difference in surface flatness obtained from factory testing is 0.08λ². This measurement result indicates that it can meet the requirements of quantum computing.

[0083] Antireflection coating 23 is disposed on both sides of the transparent substrate 22. For the fluorescence signal excited by the fourth laser used for high-resolution imaging, the antireflection coating 23 is configured to meet the following condition: when the fourth laser is incident on the antireflection coating 23 at an incident angle of 0 to 50 degrees, the difference in reflectivity of the antireflection coating 23 at different incident angles is less than 1%, thereby ensuring the spatial uniformity of the fluorescence signal intensity as much as possible and providing stable optical conditions for high-resolution imaging of a single quantum bit.

[0084] It should be noted that the antireflective coating 23 can be deposited by a commercial organization. The antireflective coating 23 needs to ensure that the wavefront difference of the transmitted test light is less than λ3 / 10, where λ3 is the wavelength of the test light used in the factory test, and λ3 is 632 nm. After the antireflective coating 23 is deposited, the total thickness of the two antireflective coatings 23 is approximately 3 μm. Testing shows that its transmittance for test light exceeds 99.3%, meeting the requirements for high-resolution optical imaging.

[0085] According to an embodiment of the present invention, the flatness of the inner wall facing each other along the second direction of the second mounting groove 12 is configured to be <0.005mm, the projections of the second mounting grooves 12 of the two support components coincide in the first direction, and the plate electrode 2 needs to have a specific structure and size and use a specific material, which can ensure the locking of the optical wavefront phase during the transmission of fluorescence signals, and realize that the peak-valley difference of the wavefront phase difference transmitted by the plate electrode 2 is <λ1 / 4, laying the foundation for clear imaging of a single quantum bit.

[0086] According to an embodiment of the present invention, a transparent conductive film layer 24 is disposed on one of the antireflection film layers 23. The transparent conductive film layer 24 serves as the conductive portion of the planar electrode. The material of the transparent conductive film layer 24 is indium tin oxide (ITO). The antireflection film layer 23 includes a tantalum oxide layer and a silicon dioxide layer. The silicon dioxide layer is in contact with the transparent conductive film layer 24, which can prevent the transparent conductive film layer 24 from reacting chemically with the tantalum oxide layer, thereby avoiding any impact on the ultra-high vacuum of the vacuum chamber.

[0087] It should be noted that if the planar electrode adopts a structure in which the transparent conductive film layer 24 is directly formed on the transparent substrate 22, its transmittance to incident light is typically only around 90%. To meet the requirements of high-resolution imaging, it is necessary to improve the signal-to-noise ratio of a single fluorescence signal. Therefore, the transmittance of the planar electrode 2 to incident light needs to be further increased to over 98%. To achieve this goal, an antireflection film layer 23 needs to be formed between the transparent substrate 22 and the transparent conductive film layer 24. The antireflection film layer 23 needs to ensure that the transmittance to incident light exceeds 98%.

[0088] The thickness of the transparent conductive film layer 24 was set to 10 nm, and the final measured sheet resistance was approximately [value missing]. The fact that the optical transmittance of the transparent conductive film layer 24 did not decrease in either of the two tests indicates that it balances both conductivity and optical transmittance. It is the unit symbol for sheet resistance.

[0089] It should be noted that before assembling the flat plate electrode 2 into the vacuum chamber, considering that the vacuum chamber needs to be baked as a whole, and that the sheet resistance of the transparent conductive film 24 may change due to deoxidation under ultra-high vacuum conditions, the flat plate electrode 2 needs to be pre-baked: it is placed in a rough vacuum environment with a pressure of <0.1 atmospheres and baked at 180°C for 1 day, and then cooled slowly at a rate of 1°C / min to ensure the stability of the film performance.

[0090] After pre-baking and annealing, the surface profile of the plate electrode 2 was measured using an interferometer, and its sheet resistance change was simultaneously detected. The final measured surface profile met the following conditions: the peak-to-valley difference on the surface of the plate electrode 2 was 0.11λ², and the sheet resistance was approximately... All requirements were met. Offline assembly and verification showed that using 589nm light from fiber optic output as the fourth laser, and employing a high-resolution objective lens to image the qubits inside the two planar electrodes, the imaging resolution reached 490nm, and the Strehl ratio of the point spread function exceeded 0.8, fully meeting the core requirement of quantum computing for high-resolution imaging.

[0091] The electrode device of this invention is placed in a vacuum chamber, sealed, evacuated, and then baked to achieve the final vacuum effect. The vacuum level reached an ultra-high level of millibar. Simultaneously, the parallelism of the two planar electrodes was measured to be less than 100 arcsec using laser testing. A high-power laser was then injected into the vacuum cavity to form an optical lattice. After the qubits were loaded onto the lattice points, imaging of a single qubit between the two planar electrodes was achieved using an imaging device outside the vacuum. During this imaging process, the fluorescence emitted by the qubits had a wavelength of 780 nm, achieving an imaging resolution of 680 nm.

[0092] According to an embodiment of the present invention, the material of the support component 1 can be, for example, a machinable glass-ceramic. The reasons for selecting this material may specifically include the following aspects: First, its porosity is 0%, which meets the requirements of ultra-high vacuum. Second, its dielectric strength is 129 kV / mm, making it resistant to breakdown under high voltage. Third, its Young's modulus is as high as 66.9 GPa, and contact stress has little effect on its deformation. Fourth, it has good machinability, and the peak-to-valley difference in surface flatness after machining can be less than 0.5 μm, allowing for good fit with the machined flat plate electrode 2.

[0093] According to embodiments of the present invention, reference continues. Figure 2Multiple pairs of first mounting posts 14 are formed on the two support components 1. The projections of each pair of first mounting posts 14 coincide in a first direction and are located between the first mounting groove 11 and the second mounting groove 12 in a second direction. One of the first mounting posts 14 in each pair is disposed on one support component 1, and the other first mounting post 14 is disposed on the other support component 1.

[0094] Figure 8 A perspective view of a first rod-shaped electrode provided according to an embodiment of the present invention is shown.

[0095] Please refer to Figure 1 , Figure 2 and Figure 8 The electrode device further includes: multiple first rod-shaped electrodes 3, each passing through multiple pairs of first mounting posts 14. The first mounting posts 14 penetrate the second mounting portion 16, and both ends of the first rod-shaped electrodes 3 extend from a pair of mounting posts. The first rod-shaped electrodes 3 can generate a gradient electric field, suitable for adjusting the electric field on the qubit, thereby further increasing the degree of freedom in controlling the electric field of the qubit and providing flexible support for the subsequent precise manipulation of the qubit. A three-dimensional view of the first rod-shaped electrodes 3 is shown below. Figure 8 As shown.

[0096] Figure 9 A perspective view of a second rod-shaped electrode provided according to an embodiment of the present invention is shown.

[0097] According to an embodiment of the present invention, please refer to Figure 1 and Figure 3 and Figure 9 The aforementioned electrode device further includes two second rod-shaped electrodes 4, each corresponding to one of the two flat plate electrodes 2. The second mounting portion 16 has a first mounting surface and a second mounting surface that are opposite to each other in a first direction. The first mounting surfaces of the two second mounting portions 16 face each other in the first direction. A second mounting post 17 is formed on the second mounting surface of one of the second mounting portions 16. The first end 41 of the second rod-shaped electrode 4 passes through the second mounting post 17 and is connected to the conductive portion of the corresponding flat plate electrode to supply power to the flat plate electrode 2. It should be noted that, as... Figure 7 As shown, slots 25 can be formed at both ends of the flat plate electrode 2 along the first direction, and the first end 41 of the second rod electrode 4 extends into the slots 25 to connect with the conductive part of the flat plate electrode 2.

[0098] It should be noted that when installing the flat plate electrode 2 and the second rod-shaped electrode 4 onto the support assembly 1, it is necessary to perform assembly and adaptation tests on the flat plate electrode 2 and multiple second rod-shaped electrodes 4 with the support assembly 1. For example, second rod-shaped electrodes 4 with a certain frictional force but capable of being fully inserted into the slot 25 are selected as reserve parts. This initial screening method can effectively reduce the risk of incomplete connection due to incomplete assembly constraints, while avoiding severe deformation of the flat plate electrode 2 surface caused by excessive stress, thus ensuring the stability of subsequent use. According to an embodiment of the present invention, the two rod-shaped electrodes can be connected to the wires using a vacuum-specific wire connector, and the wires can be led to the vacuum feedthrough to achieve power supply to the first rod-shaped electrode 3 and the flat plate electrode 2 outside the vacuum.

[0099] According to an embodiment of the present invention, the design of the first mounting post 14 penetrating through the second mounting part 16, combined with the assembly method in which the two ends of the first rod-shaped electrode 3 extend from a pair of mounting posts, can precisely define the mounting position of the first rod-shaped electrode 3, ensure its relative position with the flat plate electrode 2, and guarantee the symmetry of the electric field gradient distribution of the flat plate electrode 2.

[0100] According to embodiments of the present invention, reference continues. Figure 1 The first rod-shaped electrode 3 is staggered with the first, second, and third lasers to prevent the first rod-shaped electrode from blocking the formation of the optical lattice by the first, second, and third lasers. The number of first rod-shaped electrodes 3 can be, for example, 3, 4, 5, or 6, etc. Furthermore, the first rod-shaped electrodes 3 are symmetrically distributed among the flat plate electrodes 2. Figure 1 The diagram shows four first rod-shaped electrodes. During quantum computing, the laser beam input between the two plate electrodes 2 may include multiple beams simultaneously, and these beams may propagate in different directions. By arranging the first rod-shaped electrodes 3 parallel to each other, the obstruction of the laser input between the two plate electrodes 2 can be minimized.

[0101] According to an embodiment of the present invention, by setting the spacing between the two flat plate electrodes and the relative mounting positions of the first rod electrode 3 and the flat plate electrode 2, the numerical aperture of the electrode device is required to exceed 0.6 to achieve high-resolution imaging.

[0102] According to an embodiment of the present invention, the first rod-shaped electrode 3 and the second rod-shaped electrode 4 can be made of, for example, tungsten. The first rod-shaped electrode 3 and the second rod-shaped electrode 4 are obtained by bending pure tungsten rods. Pure tungsten has a Young's modulus of approximately 400 GPa, making it less prone to deformation compared to 316 stainless steel and TC4 titanium alloy. Tungsten rods are commonly used in vacuum feedthroughs and ion trap electrodes, meeting the requirements of ultra-high vacuum. The raw material for the tungsten rod is required to have a diameter greater than 1 mm, a length greater than 300 mm, and a purity of 99.98%. To prevent excessive tip discharge in the ultra-high vacuum environment, the surface of the tungsten rod needs to be polished. To fix the first rod-shaped electrode 3 and the second rod-shaped electrode 4 to the support assembly 1 and avoid gap misalignment or tilting, the tungsten rod needs to be finely polished to a precise diameter to ensure a perfect fit with the first mounting post 14 and / or the second mounting post 17. The basic process for grinding and bending tungsten rods includes: rough grinding of the outer diameter, straightening, medium grinding of the outer diameter, straightening, fine grinding of the outer diameter, straightening, controlling the overall length, bending and shaping, processing the flattened ends, and solidification. Throughout the process, contact with non-hydrophilic grinding fluids is strictly prohibited; only pure alcohol is used for cleaning, followed by rapid air drying to avoid affecting the ultra-high vacuum.

[0103] After the above process, the first rod-shaped electrode 3 and the second rod-shaped electrode 4 were tested with a laser instrument. The test results showed that their diameter tolerance was +0~-0.005mm, the roughness test showed Ra0.025, and the marble platform showed no light transmission. The electrodes passed smoothly through the ceramic parts without jamming, which ensured that the rod-shaped electrodes could be firmly fixed in the vacuum environment without severe bending. The parallelism tolerance between the first rod-shaped electrodes 3 and between the first rod-shaped electrode 3 and the flat plate electrode 2 was below 80 arcsec.

[0104] According to an embodiment of the present invention, the projection of the second channel 21 onto a preset plane is located at the center of the projection of the plurality of first rod-shaped electrodes onto the preset plane, and the preset plane is the plane where the plate electrode is located.

[0105] According to an embodiment of the present invention, the projection of the second channel 21 onto a preset plane is located at the center of the projections of the plurality of first rod-shaped electrodes 3 onto the preset plane, and the second channel 21 is located at the center of the plate electrode 2. This design is primarily for the convenience of electric field control and the aesthetics of the device. Secondly, the second channel 21 is located at the center of the plate electrode 2, ensuring that the qubits captured between the two plate electrodes 2 are simultaneously on the symmetry axis of the four rod-shaped electrodes. Furthermore, it is necessary to ensure that the second channels 21 of the two plate electrodes 2 are symmetrical about the centers of the two plate electrodes 2, and that their respective positional tolerances are within +0.05 to -0.05 mm. This ensures that the second laser passes perpendicularly through the center of the plate electrode 2 without obstruction, and maintains the symmetry of the electric field control of the qubits by the plurality of first rod-shaped electrodes 3.

[0106] According to an embodiment of the present invention, the electrode device further includes a plurality of fixed rings 5 ​​spaced apart.

[0107] Figure 10 A perspective view of a fixing ring provided according to an embodiment of the present invention is shown.

[0108] refer to Figure 1 and Figure 10 The fixing ring 5 has a plurality of third mounting posts 51 arranged circumferentially. The first rod-shaped electrode 3 includes a first part located between two flat plates 2 and a second part extending to the support assembly and facing the fixing ring 5, the second part being connected to a third mounting post 51; and / or, the second end of the second rod-shaped electrode 4, away from the first end, is connected to a third mounting post 51. The fixing ring 5 is also provided with a plurality of through holes 52 for winding excessively long wires.

[0109] Multiple spaced fixing rings 5 ​​and circumferentially arranged third mounting posts 51 can form multiple limits on the second part of the first rod electrode (the part extending to the support assembly and facing the fixing ring) and / or the second end of the second rod electrode. Combined with the constraint of the support assembly 1, this further ensures the installation stability of the first rod electrode 3 and the second rod electrode 4, avoids displacement or deformation during ultra-high vacuum baking and vacuuming, and ensures the accuracy of electric field control.

[0110] Schematic, there are four first rod-shaped electrodes 3, which are used to provide an additional electric field gradient to the qubit between the two plates in addition to the uniform electric field. Figure 1 The number of fixing rings given is two, and the two fixing rings 5 ​​are arranged along the second direction in order of distance from the support component 1 from near to far, namely the first fixing ring and the second fixing ring. The second parts of the four first rod-shaped electrodes 3 and the second ends of the second rod-shaped electrodes are fixed by the first fixing ring and the second fixing ring respectively. There can be six third mounting posts 51 on each fixing ring, and the six third mounting posts 51 are evenly distributed along the axial direction on the fixing ring 5. The projection of the third mounting posts 51 onto the plane where the fixing ring is located can be, for example, a regular hexagon.

[0111] The diameter tolerance range of the central through hole of the third mounting post 51 is +0.005~0mm. The third mounting post 51 is used to achieve a stable fixation of each rod-shaped electrode.

[0112] According to an embodiment of the present invention, the material of the fixing ring 5 can be, for example, ceramic. The outer diameter of the fixing ring 5 is not specifically limited in the embodiments of the present invention, and can be flexibly adjusted according to the specifications of the vacuum chamber wall in the actual application scenario to meet the assembly requirements of different vacuum chambers.

[0113] The following is a detailed description of the process of installing the electrode device into the vacuum chamber of the quantum computing device according to an embodiment of the present invention.

[0114] Step A: Parts Preparation and Pretreatment. Prepare the required flat plate electrode 2, support assembly 1, fixing ring 5, and two types of rod-shaped electrodes. Clean the two types of rod-shaped electrodes and support assembly 1 with anhydrous ethanol and then quickly air dry them to avoid contamination that could affect the ultra-high vacuum environment of the vacuum chamber.

[0115] Step B: Insert one end of each of the two coated flat plate electrodes 2 into the first mounting groove 11 and the second mounting groove 12 of a support component 1, respectively, ensuring that the transparent conductive film layers of the two flat plate electrodes 2 face each other. Install the other ends of the two flat plate electrodes 2 into the first mounting groove 11 and the second mounting groove 12 of another support component 1. The two flat plate electrodes 2 are precisely positioned and fixed on the support component 1 through the first mounting groove 11, the second mounting groove 12, and multiple pairs of fixing parts 18.

[0116] Step C: Insert the first ends 41 (flattened ends) of the two second rod-shaped electrodes 4 into the first mounting posts 14, ensuring that the flattened surfaces of the flattened ends are in close contact with the conductive film layer 24 of the flat plate electrode 2. Then, insert the four first rod-shaped electrodes 3 through the four pairs of first mounting posts 14 of the two support components 1. Finally, use two fixing rings with third mounting posts 51 to sequentially fix the second parts of all the first rod-shaped electrodes 3 and the second ends of the second rod-shaped electrodes 4, and install the fixed electrode assembly in the vacuum chamber. It should be noted that during the above assembly process, it is necessary to ensure a transition fit between the support component 1 and the flat plate electrode 2 and rod-shaped electrodes. That is, after the flat plate electrode 2 and rod-shaped electrodes are installed in the support component 1, they still maintain a certain frictional force with the support component 1. This avoids deviations caused by incomplete connections and prevents assembly stress from causing deformation of the surface of the flat plate electrode 2, ensuring the parallelism accuracy between the two flat plate electrodes 2.

[0117] Step D: Install the support assembly 1 on the flange 9 (e.g., CF125 window flange) of the vacuum chamber, so that the flat plate electrode 2 is as close as possible to the window 10, to create close-range light receiving conditions for the imaging components (e.g., window and objective lens 8) outside the vacuum chamber, and ensure that the numerical aperture of the light received by the imaging components reaches 0.6 or higher.

[0118] Step E: At the end of the two rod-shaped electrodes near the fixing ring 5, the two rod-shaped electrodes can be connected to the wire using a vacuum-specific wire connector, and the wire is led to the vacuum feedthrough to achieve power supply to the first rod-shaped electrode 3 and the flat plate electrode 2 from outside the vacuum. After the vacuum chamber is sealed and leak-tested, the vacuum chamber is vacuum-baked at 150℃ (for 1-2 weeks), then slowly cooled to room temperature. Afterward, the angle valve is closed and the ion pump is turned on, finally obtaining the ultra-high vacuum environment required for quantum computing experiments. Before and after the vacuum chamber is baked, the capacitance between the electrodes needs to be tested using a bridge instrument. If there is no significant change in capacitance, it indicates that the two electrodes can be used normally.

[0119] Step F: After the vacuum level in the vacuum chamber reaches the required standard, the first, second, and third lasers can be incident into the vacuum chamber to form an optical lattice, thereby trapping the qubits within each lattice point of the optical lattice. The optical lattice formed in the vacuum device is as follows: Figure 4 As shown, after further cooling of the vacuum cavity, individual qubits can be fabricated within each lattice point. By applying a voltage to the plate electrode 2 to generate a target electric field strength, the Stark shift of the qubit can be modulated. Simultaneously, applying a voltage to the first rod electrode 3 allows it to form the desired electric field strength gradient and curvature. Finally, the objective lens 8 is used to detect the qubits of specific quantum states within the lattice point, completing the entire process of quantum state preparation, manipulation, and readout required for quantum computing and quantum simulation.

[0120] It should be noted that the size of the electrode device can be flexibly adjusted according to the actual application scenario. For example, if the numerical aperture requirement of the emitted light from the two plate electrodes 2 is low and a high electric field strength is not required in a certain application scenario, the distance between the two plate electrodes 2 can be increased while the area of ​​the two plate electrodes 2 can be reduced to meet the requirements.

[0121] Currently, no related technologies have been reported to include an electrode device that can simultaneously meet the requirements of high-resolution imaging of qubits, local single-qubit quantum control, and generate a uniform large electric field. Such devices need to control the interactions between qubits to achieve precise manipulation of qubits in quantum computing. The electrode device fabricated in this invention can simultaneously place a flat plate electrode 2 and a rod-shaped electrode within a vacuum chamber, generating a uniform large electric field while possessing high-resolution optical imaging capabilities, achieving the resolution of a single qubit within an optical lattice.

[0122] In this embodiment of the invention, the dimensions of each part of the support structure are limited, strengthening the constraint on the parallelism between the two plate electrodes 2. This ensures that the plate electrodes 2 maintain good parallelism and surface stability even after undergoing a series of vacuum operations such as sealing, vacuuming, and baking, meeting the stringent requirements of high-resolution imaging and electric field control. Furthermore, this embodiment of the invention forms a second channel 21 on the two plate electrodes 2. This ensures the uniformity of the electric field in the region between the second channels 21 of the two plate electrodes while also providing an optical path for high-power lasers. Finally, this embodiment of the invention specifies an antireflection film of a particular material and applies a coating method to the transparent electrode plate with the antireflection film layer inside and the transparent conductive layer outside. After pre-annealing, the transmittance of the plate electrodes 2 coated using the above method does not change significantly and meets the requirements of an ultra-high vacuum environment. Finally, a high-power laser is incident between the two plate electrodes 2, forming an optical lattice. Simultaneously, the fluorescence signal of a single qubit is accurately detected by a high-resolution imaging system, achieving the core objective of the quantum computing experiment.

[0123] The embodiments of the present invention have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of the invention. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of the invention is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the invention, and all such substitutions and modifications should fall within the scope of the invention.

Claims

1. An electrode device, wherein the electrode device is installed in the vacuum chamber of a quantum computing device, characterized in that, The electrode device includes: Two support components are arranged opposite each other in a first direction. Each support component has a first mounting slot and a second mounting slot spaced apart in a second direction orthogonal to the first direction. The projections of the first mounting slots of the two support components in the first direction coincide, and the projections of the second mounting slots of the two support components in the first direction also coincide. Two flat plate electrodes, one of which is inserted into two first mounting slots at both ends, and the other of which is inserted into two second mounting slots at both ends. Wherein, the parallelism of the first mounting groove and the second mounting groove is configured to be <0.005mm, and the flatness of the inner walls of the first mounting groove and / or the second mounting groove facing each other along the second direction is configured to be <0.005mm, so that after the two plate electrodes are energized, a uniform electric field can be generated between the two plate electrodes, and the uniform electric field is used to control the quantum state of the quantum bit located between the two plate electrodes. In a first direction, the two support components each form a first channel to allow an external first laser to be incident between the two planar electrodes; at least one of the two planar electrodes has a first surface and a second surface opposite to each other in a second direction, and a second channel penetrating the first surface and the second surface, the second channel being adapted to allow an external second laser to pass through along the second direction; an external third laser is incident between the two planar electrodes along a third direction, the third direction being orthogonal to the first direction and the second direction, respectively; The first laser, the second laser, and the third laser are suitable for forming an optical lattice, which is used to trap the qubit. Multiple pairs of first mounting posts are formed on the two support components. The projections of each pair of first mounting posts coincide in a first direction and are located between a first mounting groove and a second mounting groove in a second direction. One of the first mounting posts in each pair is disposed on one support component, and the other first mounting post is disposed on the other support component. The electrode device further includes: Multiple first rod-shaped electrodes are respectively disposed on multiple pairs of first mounting posts, and the multiple first rod-shaped electrodes are suitable for adjusting the electric field of the quantum bit; First Installation Department; A second mounting portion protrudes from the first mounting portion in a second direction. The first channel, the first mounting groove, and the second mounting groove are respectively formed in the second mounting portion, and in the second direction, the first channel is located between the first mounting groove and the second mounting groove. The qubit generates a fluorescence signal under the action of an external fourth laser, and an external imaging device images the qubit based on the fluorescence signal. The parallelism between the optical mounting surface of the first mounting portion and the second mounting groove is configured such that the external imaging device can resolve a single fluorescence signal. Two second rod-shaped electrodes are provided, each corresponding to one of the two flat plate electrodes. The second mounting portion has a first mounting surface and a second mounting surface that are opposite to each other in a first direction. The first mounting surfaces of the two second mounting portions face each other in a first direction. A second mounting post is formed on the second mounting surface of one of the second mounting portions. The first end of the second rod-shaped electrode passes through the second mounting post and is connected to the conductive portion of the corresponding flat plate electrode to supply power to the flat plate electrode.

2. The electrode device according to claim 1, characterized in that, The projection of the second channel onto the preset plane is located at the center of the projection of the plurality of first rod-shaped electrodes onto the preset plane, which is the plane where the flat plate electrode is located.

3. The electrode device according to claim 1, characterized in that, The first rod-shaped electrode is misaligned with the first laser, the second laser, and the third laser.

4. The electrode device according to claim 1, characterized in that, The first mounting post penetrates the second mounting portion, and the two ends of the first rod-shaped electrode extend from a pair of mounting posts respectively; The electrode device further includes: Multiple fixed rings are spaced apart, and multiple third mounting posts are arranged circumferentially on the fixed rings; The first rod-shaped electrode includes a first portion located between the two flat plate electrodes, and a second portion extending to the support assembly and toward the fixing ring, the second portion being connected to one of the third mounting posts; And / or, the second end of the second rod-shaped electrode, away from the first end, is connected to one of the third mounting posts.

5. The electrode device according to claim 1, characterized in that, The support components also include: Multiple pairs of fixing parts are disposed on the end face of the support component facing another support component. Each pair of fixing parts includes at least two fixing parts. The at least two fixing parts are disposed on both sides of the first mounting groove or the second mounting groove, and the flat plate electrode abuts against the opposite end faces of the at least two fixing parts.

6. The electrode device according to claim 1, characterized in that, The plate electrode includes: Transparent substrate; Two antireflective coating layers are disposed on both sides of the transparent substrate; A transparent conductive film layer is disposed on one of the antireflective film layers.

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