Method and device for removing ceramic coating on surface of carbon material and computer equipment

Abstract

The invention discloses a method and device for removing a ceramic coating on the surface of a carbon material and computer equipment, and relates to the technical field of carbon material processing. The method for removing the ceramic coating on the surface of the carbon material comprises the steps that a reaction cavity provided with a workpiece to be treated is vacuumized, the pressure in the reaction cavity is made to be initial pressure, and the temperature in the reaction cavity is increased to the target temperature; increasing the initial pressure to a target pressure, and introducing a process gas capable of reacting with the ceramic coating into the reaction cavity in a pulse circulation or continuous pressure manner, so that the process gas performs chemical digestion on the ceramic coating; introducing inert gas into the reaction cavity to replace by-product gas in the reaction cavity; and detecting the removal condition of the ceramic coating, and cleaning the to-be-treated workpiece from which the ceramic coating is completely removed. Through the method, the removal efficiency of the ceramic coating is improved, and the production cost of the carbon-carbon composite material is reduced.

Description

Technical Field

[0001] This application relates to the field of carbon material processing technology, and in particular to a method, apparatus and computer equipment for removing ceramic coatings from the surface of carbon materials. Background Technology

[0002] Carbon-carbon composites (C / C composites, hereinafter referred to as "materials") are susceptible to corrosion in complex atmospheric environments (O2-, NH4+, ion beams). Corroded areas may become contaminated with dust or experience a decrease in the overall mechanical strength of the material. Therefore, to address the corrosion problem in complex atmospheric environments, a ceramic coating that is resistant to atmospheric corrosion and high temperatures is typically applied to the surface.

[0003] Insufficient precision in ceramic coating processing can occur due to factors such as equipment accuracy, manufacturing processes, and human error, resulting in uneven coating coverage on certain areas of the material surface. Therefore, it is necessary to remove the ceramic coating from these unevenly coated materials and then apply a new coating. However, due to the high hardness, strong adhesion, and complex shape of ceramic coatings, precise and complete removal is difficult, leading to significant material loss during processing. Since the coating process is at the end of material production, if the material is scrapped during coating removal, production costs will increase dramatically. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the purpose of this application is to provide a method, apparatus, and computer equipment for removing ceramic coatings from the surface of carbon materials, which can improve the removal efficiency of ceramic coatings and reduce the production cost of carbon-carbon composite materials.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] In a first aspect, this application provides a method for removing a ceramic coating from the surface of a carbon material, comprising:

[0007] The reaction chamber containing the workpiece to be processed is evacuated to bring the pressure in the reaction chamber to the initial pressure, and the temperature in the reaction chamber is raised to the target temperature; wherein, the surface of the workpiece to be processed has a ceramic coating;

[0008] The initial pressure is increased to the target pressure, and a process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulse cycle or in a continuous pressure manner, so that the process gas chemically decomposes the ceramic coating; wherein, the highest pressure in the reaction chamber during each pulse cycle is the target pressure, and the lowest pressure is the initial pressure; continuous pressure means that the pressure in the reaction chamber is maintained at the target pressure;

[0009] An inert gas is introduced into the reaction chamber to replace the byproduct gas in the reaction chamber;

[0010] The removal of the ceramic coating is inspected, and the workpiece to be treated after the ceramic coating has been completely removed is cleaned.

[0011] In some embodiments, an inert gas is introduced into the reaction chamber to replace the byproduct gas in the reaction chamber, including:

[0012] The pressure inside the reaction chamber is reduced to the initial pressure, and an inert gas is introduced.

[0013] The pressure inside the reaction chamber is increased to a preset pressure, and the reaction chamber undergoes at least one pressure cycle from the preset pressure to the initial pressure to displace the by-product gas inside the reaction chamber. During each pressure cycle, when the pressure inside the reaction chamber is the initial pressure, an inert gas is introduced. The preset pressure is greater than the initial pressure and less than the target pressure.

[0014] In some embodiments, an inert gas is introduced into the reaction chamber to replace the byproduct gas in the reaction chamber, including:

[0015] An inert gas at a temperature below the preset temperature is pulsed into the reaction chamber to quench the surface of the workpiece to be treated.

[0016] After a preset delay, the pressure inside the reaction chamber is adjusted to the initial pressure to replace the byproduct gas inside the reaction chamber.

[0017] In some embodiments, a process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed, cyclic manner, including:

[0018] During a pulse cycle, when the pressure inside the reaction chamber reaches the target pressure, process gas is introduced to allow the process gas to react with the ceramic coating.

[0019] Collect the byproduct gas generated by the reaction of process gas and ceramic coating to determine the characteristic peak intensity of the target substance in the byproduct gas;

[0020] The concentration of the target substance in the byproduct gas is determined based on the characteristic peak intensity of the target substance. When the concentration drops to the target concentration, the reaction between the process gas and the ceramic coating is considered complete.

[0021] In some embodiments, the process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed, cyclic manner, further comprising:

[0022] The etching rate of the ceramic coating is determined based on the characteristic peak intensity of the target material during pulse cycling.

[0023] Based on the etching rates in two adjacent pulse cycles, the etching rate curves of two adjacent pulse cycles are determined.

[0024] If the curvature of the etching rate curve is lower than the preset curvature threshold, reduce the pressure and / or temperature in the reaction chamber in the next pulse cycle, and / or introduce a process gas mixed with inert gas in the next pulse cycle to allow the process gas to react with the ceramic coating.

[0025] In some embodiments, the process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed, cyclic manner, further comprising:

[0026] The etching rate of the ceramic coating is determined based on the characteristic peak intensity of the target material during pulse cycling.

[0027] If the etching rate of multiple consecutive pulse cycles is lower than the preset rate threshold, the pressure and / or temperature in the reaction chamber is increased in the next pulse cycle to allow the process gas to react with the ceramic coating.

[0028] In some embodiments, the process gas is chlorine or a chlorinated halide.

[0029] In some embodiments, when the process gas is chlorine, the target temperature ranges from 1000°C to 2000°C.

[0030] Secondly, this application also provides a device for removing ceramic coatings from the surface of carbon materials, comprising a reactor, a control unit, a replacement unit, and a detection unit. The reactor forms a reaction chamber for receiving the workpiece to be treated, wherein the surface of the workpiece to be treated has a ceramic coating. The control unit is used to evacuate the reaction chamber containing the workpiece to be treated, so that the pressure in the reaction chamber is the initial pressure, and to control the temperature in the reaction chamber to rise to the target temperature. The control unit is also used to raise the initial pressure to the target pressure, and to introduce process gas capable of reacting with the ceramic coating into the reaction chamber in a pulse cycle or pressure continuous manner, so that the process gas chemically digests the ceramic coating. The highest pressure in the reaction chamber during each pulse cycle is the target pressure, and the lowest pressure is the initial pressure. Pressure continuous means that the pressure in the reaction chamber is maintained at the target pressure. The replacement unit is used to receive inert gas and introduce inert gas into the reaction chamber to replace the by-product gas in the reaction chamber. The detection unit is used to detect the removal status of the ceramic coating and to clean the workpiece to be treated after the ceramic coating has been completely removed.

[0031] Thirdly, this application also provides a computer device, which includes a memory and a processor. The memory stores a computer program, and when the computer program is executed by the processor, the processor performs any of the above-mentioned methods for removing the ceramic coating on the surface of carbon materials.

[0032] The method for removing ceramic coatings from carbon materials provided in this application does not require manual or mechanical processing. It allows the process gas to react with the ceramic coating while preventing the substrate from reacting with the process gas, thus achieving precise and comprehensive removal of the ceramic coating and avoiding substrate scrap. On the one hand, it reduces material loss during processing, thereby reducing the production cost of carbon-carbon composite materials. On the other hand, removing the ceramic coating through chemical reaction is more convenient than physical removal, improving the removal efficiency of the ceramic coating. Attached Figure Description

[0033] Figure 1 This is a flowchart illustrating the method for removing the ceramic coating on the surface of carbon materials in the embodiments of this application;

[0034] Figure 2 This is a flowchart illustrating the process gas introduced via pulse circulation in an embodiment of this application;

[0035] Figure 3 This is a flowchart illustrating the process of determining the end of the reaction in the embodiments of this application;

[0036] Figure 4 This is a flowchart illustrating the adjustment of reaction parameters in an embodiment of this application;

[0037] Figure 5 This is a flowchart of the first embodiment of the replacement of by-product gas in this application;

[0038] Figure 6 This is a flowchart of the second embodiment of the replacement of by-product gas in this application;

[0039] Figure 7 This is a schematic diagram of the apparatus for removing the ceramic coating on the surface of carbon materials in the embodiments of this application;

[0040] Figure 8 This is a schematic diagram of a computer device in an embodiment of this application.

[0041] Reference numerals: 100 for removing ceramic coating on carbon material surface, 11 for reactor, 12 for control unit, 13 for replacement unit, 14 for detection unit, 200 for computer equipment, 21 for memory, 22 for processor, 23 for communication interface, and 24 for bus. Detailed Implementation

[0042] To enable those skilled in the art to better understand the present application, the technical solutions in specific embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0043] It should be noted that the terms "first," "second," and similar terms used in this application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. "A plurality" or "several" indicates at least two. "Comprising" or "including" and similar terms mean that the elements or objects preceding "comprising" or "including" encompass the elements or objects listed following "comprising" or "including" and their equivalents, and do not exclude other elements or objects. "Connected" or "linked" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0044] Vacuum processing systems are crucial in chemical material processing, comprising reaction equipment, pumping equipment, and gas delivery equipment. The reaction equipment forms a reaction chamber to contain the material; the temperature within the chamber is adjustable, creating a high-temperature processing environment. The pumping equipment, connected to the reaction equipment, removes gas from the reaction chamber, creating a low-pressure or vacuum processing environment. The gas delivery equipment, also connected to the reaction equipment, introduces process gas into the reaction chamber, causing a chemical reaction between the process gas and the material, thus achieving the processing of the material.

[0045] Vacuum machining systems can be applied to process workpieces that have a substrate and a ceramic coating on their surface. The substrate is made of graphite, and the ceramic coating is made of SiC (silicon carbide), covering the outer surface of the substrate. The ceramic coating on the workpiece may have certain defects, including but not limited to uneven coating thickness, discoloration, and breakage. These defects can affect the performance of the carbon material, thus requiring removal and recoating.

[0046] like Figure 1 As shown in the embodiments of this application, a method for removing ceramic coatings from the surface of carbon materials (hereinafter referred to as the removal method) is provided.

[0047] In some implementations, physical contaminants on the surface of the workpiece are first removed before the removal method is executed to prevent them from hindering the reaction between the workpiece and the process gas during the removal process. The process gas is chlorine or chlorinated halides, such as CFCs (chlorofluorocarbons) and HCFCs (hydrochlorofluorocarbons). The process gas reacts chemically with the ceramic coating, peeling the ceramic coating off the substrate.

[0048] Physical contaminants on the surface of workpieces are removed by ultrasonic cleaning. The workpiece is immersed in a cleaning tank filled with pure water, and ultrasonic vibrations are used to peel off physical contaminants such as dust and oil adhering to its surface. After ultrasonic cleaning, the workpiece is dried to avoid the generation of corrosive gases caused by the reaction of moisture adhering to the workpiece with process gases during ceramic coating removal, and to prevent localized pressure fluctuations due to water vapor evaporation from affecting the stability of the reaction during the removal process.

[0049] For example, the ultrasonic cleaning time is from 1 min to 120 min, and the drying temperature is from 100°C to 200°C.

[0050] By cleaning the physical contaminants on the surface of the workpiece as described above, the stability of the reaction during subsequent removal processes is ensured.

[0051] like Figure 1 As shown, in this embodiment, the removal method includes the following steps:

[0052] Step S101: Vacuum the reaction chamber containing the workpiece to be processed to bring the pressure in the reaction chamber to the initial pressure and raise the temperature in the reaction chamber to the target temperature.

[0053] It should be noted that the initial pressure is the pressure under vacuum conditions after the reaction chamber has been evacuated. Based on the pressure range, vacuum conditions include low vacuum, medium vacuum, and high vacuum, with low vacuum having a pressure range of 10... 5 ~10 2 Pa, the pressure range of medium vacuum is 10. 2 ~10 -1 Pa, the pressure range of high vacuum is 10. -1 ~10 -5 In this embodiment, the vacuum state is medium vacuum.

[0054] In some implementations, while raising the temperature in the reaction chamber to the target temperature, a small amount of inert gas for protection is introduced into the reaction chamber. This serves two purposes: firstly, it prevents the residual gas in the reaction chamber after vacuuming from reacting with the workpiece during the heating process (e.g., oxidation C + O2 → CO2, 2SiC + 3O2 → 2SiO2 + 2CO), and maintains the pressure inside the reaction chamber to prevent oxygen- and nitrogen-containing air from seeping back into the reaction chamber; secondly, the inert gas evenly conducts heat, preventing the workpiece from cracking due to thermal stress caused by local temperature differences.

[0055] For example, the target temperature ranges from 800°C to 2300°C, and the initial pressure is less than 5 Pa.

[0056] Step S102: Increase the initial pressure to the target pressure, and introduce process gas that can react with the ceramic coating into the reaction chamber in a pulsed cycle or continuous pressure manner, so that the process gas chemically digests the ceramic coating.

[0057] In this context, "introducing process gas into the reaction chamber via pulse cycles" refers to introducing process gas into the reaction chamber and precisely controlling the pressure within the chamber through periodic or instantaneous pressure fluctuations. The highest pressure within the reaction chamber during each pulse cycle is the target pressure, and the lowest pressure is the initial pressure. "Introducing process gas into the reaction chamber via continuous pressure" refers to maintaining the pressure within the reaction chamber at the target pressure while continuously introducing process gas.

[0058] In some implementations, the process gas is CFC, which is continuously introduced into the reaction chamber under pressure. When the initial pressure is increased to the target pressure, CFC is continuously introduced into the reaction chamber at a volumetric flow rate of 10 slm for a reaction time of 180 min, so that the CFC chemically decomposes the ceramic coating, avoiding interruption of chemical decomposition due to CFC consumption.

[0059] For example, when the process gas is continuously introduced under pressure, the reaction time required for chemical digestion is 10 min to 600 min, the target temperature is 1800 °C, and the target pressure is 50 kPa. Since the bond energies of the C-Cl covalent bond and the CF covalent bond in CFC molecules (such as CCl3F (trichlorofluoromethane) and C2Cl2F4 (dichlorotetrafluoroethane)) are 330 kJ / mol and 485 kJ / mol, respectively, the thermal energy at 1800 °C can exceed the bond energy threshold, thereby causing the C-Cl covalent bond and the CF covalent bond to break, generating Cl (highly reactive chlorine radical) and F (fluorine radical).

[0060] Under a target temperature of 1800℃, a target pressure of 50kPa, and the protection of an inert gas, the Cl produced by the decomposition of CFC reacts with SiC as follows:

[0061] SiC + 4Cl → SiCl4↑ + C

[0062] The generated SiCl4 has a boiling point of only 57.6℃. At 1800℃, SiCl4 separates from the workpiece in gaseous form, breaking the reaction equilibrium and promoting the continuous decomposition of the coating.

[0063] Under a target temperature of 1800℃, a target pressure of 50kPa, and the protection of an inert gas, the F produced by CFC decomposition reacts with SiC as follows:

[0064] SiC + 4F → SiF4↑ + C

[0065] The generated SiF4 has a boiling point of only -86℃. Compared with SiCl4, SiF4 is more volatile at 1800℃, which further accelerates the separation of the coating from the substrate.

[0066] It should be noted that at 1800℃, the activation energy of C in SiC is relatively high, making it difficult for Cl and F to react. In contrast, the activation energy of Si is relatively low, making it easier to react with Cl and F. This allows for the removal of the ceramic coating while avoiding damage to the substrate.

[0067] In addition, a target pressure of 50 kPa can increase the collision frequency between CFC molecules and the ceramic coating, thereby improving the removal efficiency of the ceramic coating.

[0068] In the above implementation method, CFC is continuously introduced into the high-temperature and high-pressure reaction chamber, causing the C-Cl covalent bonds and CF covalent bonds in the CFC to break, so as to generate Cl and F. Both Cl and F can react with Si in SiC without reacting with C in SiC, thereby removing the ceramic coating while avoiding damage to the substrate.

[0069] like Figure 2 As shown, in some implementations, the process gas is Cl2 (chlorine gas), and the process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed cycle, including the following steps:

[0070] Step S201: Adjust the pressure inside the reaction chamber to the initial pressure and adjust the temperature inside the reaction chamber to the target temperature.

[0071] Step S202: Introduce Cl2 into the reaction chamber at a preset volumetric flow rate.

[0072] In some implementations, when the process gas is chlorine, the target temperature ranges from 1000°C to 2000°C. At this target temperature, Cl2 reacts as follows with both the ceramic coating, whose main component is SiC, and the substrate, whose main component is graphite:

[0073] SiC(s)+2Cl2(g)→SiCl4(g)+C(s);

[0074] C(s) + 2Cl2(g) → CCl4(g).

[0075] The generated SiCl4 and CCl4 are both gases that can be rapidly detached from the substrate surface.

[0076] Specifically, although the bond energy of the Si-C covalent bond in SiC is 450 kJ / mol, there are a large number of structural defects in SiC (such as vacancies, dislocations, and grain boundaries). The Si or C atoms at these defects are uncoordinated and have high chemical activity, which causes the Si-C covalent bond to break at the target temperature, generating Si and C atoms. Both Si and C atoms can quickly combine with Cl atoms to form stable Si-Cl and C-Cl covalent bonds.

[0077] Compared to SiC, graphite has a more stable structure. In graphite, each C atom is bonded to three adjacent C atoms. Since the Cl2 molecule must first dissociate into a highly reactive Cl radical and break a C=C bond to form a C-Cl covalent bond, and the bond energy of the Cl-Cl covalent bond is 243 kJ / mol, the bond energy of the C=C covalent bond is 345 kJ / mol, and the bond energy of the C-Cl covalent bond is 327 kJ / mol, the energy barrier for the formation of the C-Cl covalent bond is very high. This results in the reaction rate of graphite with Cl2 being several orders of magnitude slower than that of SiC with Cl2, thus achieving the removal of the ceramic coating while avoiding damage to the matrix.

[0078] Among them, the reaction energy barrier is the smallest energy obstacle that reactants must overcome to transform into products in a chemical reaction. It reflects the energy difference that the system needs to cross from the initial state to the transition state on the potential energy surface.

[0079] It should be noted that if the target temperature is too high, on the one hand, the energy consumption will be too high, leading to an increase in removal costs, and on the other hand, the thermal expansion coefficient of graphite will increase, leading to the risk of deformation and scrapping of the matrix; if the target temperature is too low, the reaction rate between SiC and Cl2 will be low, resulting in low removal efficiency.

[0080] By following the steps above, the removal efficiency can be improved and the removal cost can be reduced while avoiding the risk of substrate spoilage.

[0081] Step S203: Determine whether the pressure inside the reaction chamber has reached the target pressure. If yes, proceed to step S204; if no, proceed to step S203.

[0082] It should be noted that, due to the introduction of Cl2 into the reaction chamber in step S202, the gas content in the reaction chamber increases, and the pressure increases accordingly. Increasing the pressure in the reaction chamber can increase the density and collision frequency of Cl2 molecules, allowing Cl2 molecules to fully diffuse into the micropores and defects of the ceramic coating, thereby improving the removal effect of the ceramic coating.

[0083] For example, the target pressure is 20 kPa.

[0084] Step S204: Stop feeding Cl2 into the reaction chamber and maintain the state inside the reaction chamber for a first preset time.

[0085] Maintaining the state inside the reaction chamber means not artificially changing the temperature and pressure inside the reaction chamber.

[0086] Step S205: Adjust the pressure inside the reaction chamber to the initial pressure and maintain the state inside the reaction chamber for a second preset time.

[0087] In some implementations, while adjusting the pressure in the reaction chamber to the initial pressure, an inert gas at a temperature lower than the preset temperature is pulsed into the reaction chamber to quench the surface of the workpiece to be treated, thereby generating pressure disturbance on the surface of the workpiece to be treated, breaking the gas diffusion boundary layer attached to the surface of the workpiece to be treated, preventing by-product gas from adhering to the surface of the workpiece to be treated, and improving the removal effect on ceramic coatings.

[0088] Repeat steps S202 to S205 until the ceramic coating is completely removed.

[0089] Through the above steps, Cl2 is introduced into the reaction chamber in a pulsed cycle, and the pressure in the reaction chamber is repeatedly changed to peel off the by-product gas adhering to the surface of the workpiece to be treated. This avoids the risk of substrate scrapping while improving the removal efficiency of ceramic coating.

[0090] like Figure 3 As shown, in some implementations, a process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed cycle, including the following steps:

[0091] Step S301: During one pulse cycle, when the pressure in the reaction chamber reaches the target pressure, process gas is introduced to react with the ceramic coating.

[0092] For example, the process gas is Cl2.

[0093] Step S302: Collect the byproduct gas generated by the reaction of process gas and ceramic coating to determine the characteristic peak intensity of the target substance in the byproduct gas.

[0094] When the process gas is Cl2, the byproduct gases are SiCl4 and CCl4. The characteristic peak intensities of SiCl4 (m / z = 169, 171, 173) and CCl4 (m / z = 117, 119, 121) are monitored in real time using a tail gas spectrometer. Here, m / z represents the mass-to-charge ratio, a core parameter in mass spectrometry analysis, indicating the ratio of ion mass to charge number. The meanings of each mass-to-charge ratio are as follows:

[0095] m / z = 169: corresponds to 4 Cl-35 (28.09 + 4 × 34.97 ≈ 169.0).

[0096] m / z = 171: corresponds to 3 Cl-35 + 1 Cl-37 (28.09 + 3 × 34.97 + 36.97 ≈ 171.0).

[0097] m / z = 173: corresponds to 2 Cl-35 + 2 Cl-37 (28.09 + 2 × 34.97 + 2 × 36.97 ≈ 173.0).

[0098] m / z = 117: corresponds to 3 Cl-35 (12 + 3 × 34.97 ≈ 117.0).

[0099] m / z = 119: corresponds to 2 Cl-35 + 1 Cl-37 (12 + 2 × 34.97 + 36.97 ≈ 119.0).

[0100] m / z = 121: corresponds to 1 Cl-35 + 2 Cl-37 (12 + 34.97 + 2 × 36.97 ≈ 121.0).

[0101] Step S303: Determine the concentration data of the target substance in the by-product gas based on the characteristic peak intensity of the target substance. When the concentration data drops to the target concentration, determine that the reaction between the process gas and the ceramic coating has ended.

[0102] When the concentration data drops to the target concentration, it can be determined that the surface of the workpiece to be treated is temporarily covered by by-product gas and / or the concentration of process gas in the reaction chamber is insufficient, thus determining that the reaction between the process gas and the ceramic coating has ended.

[0103] For example, the target concentration is 30% of the peak concentration of the characteristic peak.

[0104] By following the steps above, the reaction between the process gas and the ceramic coating is determined based on the intensity of the characteristic peak, thus avoiding the problem of reaction cessation and removal pause caused by fixed time intervals, thereby improving the removal efficiency.

[0105] like Figure 4 As shown, in some implementations, the process gas capable of reacting with the ceramic coating is introduced into the reaction chamber in a pulsed cycle, and the following steps are also included:

[0106] Step S401: Determine the etching rate of the ceramic coating based on the characteristic peak intensity of the target material during the pulse cycle.

[0107] The etching amount of the Si signal over time is determined by integrating the change over time, and the etching rate is then determined by comparing the etching amount with the duration of the pulse cycle. Alternatively, the etching rate of the ceramic coating can be determined by monitoring the concentration of SiF4.

[0108] Step S402: Determine the etching rate curve of two adjacent pulse cycles based on the etching rates of the two adjacent pulse cycles.

[0109] If the etching rate is lower than the preset rate in multiple pulse cycles, the ceramic coating is determined to be abnormally dense. In the next pulse cycle, the target pressure and / or the target temperature are increased to enhance the reaction intensity between the process gas and the ceramic coating, thereby improving the efficiency of ceramic coating removal.

[0110] Step S403: If the curvature of the etching rate curve is lower than the preset curvature threshold, reduce the pressure and / or temperature in the reaction chamber in the next pulse cycle, and / or introduce a process gas mixed with inert gas in the next pulse cycle to react the process gas with the ceramic coating.

[0111] It should be noted that if the curvature of the etching rate curve is lower than the preset curvature threshold, it is determined that the ceramic coating is about to be etched through. If the next pulse cycle is continued at the current temperature and pressure, it will cause damage to the substrate. Therefore, by reducing the pressure and / or temperature in the reaction chamber, and / or by mixing inert gas into the process gas, the reaction intensity between the process gas and the workpiece to be treated is reduced, thereby achieving precise and comprehensive removal of the ceramic coating.

[0112] Step S103: Inert gas is introduced into the reaction chamber to replace the byproduct gas in the reaction chamber.

[0113] Inert gases include argon and nitrogen. Inert gases do not react with the workpiece, byproduct gases, or process gases, thus replacing byproduct gases in the reaction chamber while ensuring stability. For example... Figure 5 As shown, in some implementations, an inert gas is introduced into the reaction chamber to replace the byproduct gas in the reaction chamber, including the following steps:

[0114] Step S501: Reduce the pressure in the reaction chamber to the initial pressure and introduce inert gas.

[0115] Since introducing process gas into the reaction chamber requires increasing the pressure in the reaction chamber, reducing the pressure in the reaction chamber to the initial pressure is to avoid the pressure in the reaction chamber being too high, which would prevent the inert gas from being introduced into the reaction chamber.

[0116] Step S502: Increase the pressure in the reaction chamber to the preset pressure, and make the reaction chamber achieve at least one pressure cycle from the preset pressure to the initial pressure.

[0117] The preset pressure is greater than the initial pressure but less than the target pressure.

[0118] In each pressure cycle, inert gas is introduced when the pressure inside the reaction chamber is at the initial pressure. When the pressure inside the reaction chamber rises to the preset pressure, the reaction chamber is connected to the external space, allowing the byproduct gas inside the reaction chamber to be expelled under the instantaneous increase in pressure. As the pressure inside the reaction chamber decreases from the preset pressure to the initial pressure, inert gas can be introduced into the reaction chamber to begin the next pressure cycle.

[0119] If several pressure cycles are required, steps S501 and S502 are repeated. As the pressure in the reaction chamber decreases from the preset pressure to the initial pressure and then increases from the initial pressure to the preset pressure, the byproduct gas that remains on the surface of the workpiece to be processed, such as the gaps and dead corners of the workpiece, can be discharged from the reaction chamber. After several pressure cycles, the byproduct gas is completely discharged from the reaction chamber.

[0120] By changing the pressure inside the reaction chamber through the above steps, inert gas is introduced into the reaction chamber, and by-product gas is discharged from the reaction chamber under pressure, thus achieving pressure circulation and replacing the by-product gas.

[0121] like Figure 6 As shown, in some other implementations, an inert gas is introduced into the reaction chamber to replace the byproduct gas within the reaction chamber, including the following steps:

[0122] Step S601: Pulsively introduce inert gas below the preset temperature into the reaction chamber to quench the surface of the workpiece to be treated.

[0123] Specifically, because the temperature of the inert gas is low, it can rapidly cool down the by-product gas, thereby enhancing its adsorption capacity. On the other hand, it can instantly stop the reaction on the surface of the workpiece to be treated, avoiding excessive reaction that could lead to the scrapping of the workpiece.

[0124] In this context, instantaneous cessation of reaction refers to a reaction rate constant decreasing exponentially, with the reaction rate approaching cessation instantaneously.

[0125] In some possible implementations, a cooling system for cooling can be installed in the reaction chamber, and the surface of the workpiece to be treated can be quenched either by the cooling system alone or in combination with argon gas at a lower temperature.

[0126] Step S602: After a preset delay, adjust the pressure in the reaction chamber to the initial pressure.

[0127] Specifically, as the temperature of the byproduct gas decreases in step S601, the enhanced adsorption of the byproduct gas can be discharged by adjusting the pressure in the reaction chamber to the initial pressure, thereby achieving the replacement of the byproduct gas.

[0128] In some possible implementations, since the reaction on the surface of the workpiece stops instantly when an inert gas below a preset temperature is introduced into the reaction chamber, the pressure in the reaction chamber can be adjusted to the initial pressure at the same time as the inert gas is introduced, which can also achieve the replacement of the by-product gas in the reaction chamber.

[0129] It should be noted that, in order to completely replace the byproduct gas in the reaction chamber, steps S601 and S602 are usually repeated multiple times.

[0130] Through the above steps, an inert gas at a temperature lower than the preset temperature is pulsed in, or the surface of the workpiece to be treated is quenched by a cooling system. By reducing the pressure in the reaction chamber, the adsorption of by-product gas is enhanced, and the by-product gas is discharged from the reaction chamber under the action of gas pressure, thereby achieving the replacement of by-product gas in the reaction chamber.

[0131] Step S104: Detect the removal of the ceramic coating and clean the workpiece to be treated after the ceramic coating has been completely removed.

[0132] In some implementations, the ceramic coating is considered to have been completely removed when the concentration of byproduct gas in the gas displaced from the reaction chamber is below the etching threshold and this continues for several pulse cycles.

[0133] The workpiece to be treated is cleaned by dilute hydrochloric acid or ultrasound to remove the small amount of residual reaction byproducts adhering to the surface of the workpiece. The cleaned workpiece is then dried to facilitate the recoating of the ceramic coating.

[0134] The above method eliminates the need for manual or mechanical processing, allowing the process gas to react with the ceramic coating while preventing the substrate from reacting with the process gas. This achieves precise and comprehensive removal of the ceramic coating, avoiding substrate waste. On one hand, it reduces material loss during processing, thereby lowering the production cost of carbon-carbon composite materials. On the other hand, removing the ceramic coating through chemical reaction is more convenient than physical removal, improving the removal efficiency of the ceramic coating.

[0135] This application also provides a device 100 for removing ceramic coatings from the surface of carbon materials, which includes a reactor 11, a control unit 12, a replacement unit 13, and a detection unit 14.

[0136] The reactor 11 has a reaction chamber for receiving the workpiece to be processed. The reactor 11 has several openings for gas to enter and / or for evacuating the reaction chamber. All of the openings can be closed.

[0137] The control unit 12 is used to evacuate the reaction chamber containing the workpiece to be processed, so that the pressure in the reaction chamber is the initial pressure, and control the temperature in the reaction chamber to rise to the target temperature, and raise the initial pressure to the target pressure. It also introduces process gas that can react with the ceramic coating into the reaction chamber in a pulse cycle or pressure continuous manner, so that the process gas chemically digests the ceramic coating.

[0138] Exemplarily, the control unit 12 includes a central processing unit, a temperature sensor, a temperature controller, a pressure sensor, and a pressure controller. The temperature sensor detects the temperature within the reaction chamber and generates a temperature detection signal. The pressure sensor detects the pressure within the reaction chamber and generates a pressure detection signal. The central processing unit receives the temperature and pressure detection signals and generates a first control signal representing the adjustment of the temperature within the reaction chamber and a second control signal representing the adjustment of the pressure within the reaction chamber. The temperature controller adjusts the temperature within the reaction chamber according to the first control signal. The pressure controller adjusts the pressure within the reaction chamber according to the second control signal.

[0139] The replacement unit 13 is used to receive inert gas and introduce inert gas into the reaction chamber to replace the by-product gas in the reaction chamber.

[0140] The detection unit 14 is used to detect the removal of the ceramic coating and to clean the workpiece to be processed after the ceramic coating has been completely removed.

[0141] For example, the detection unit 14 includes a tail gas spectrometer, which determines the removal status of the ceramic coating by detecting the concentration of by-product gas in the tail gas. When the concentration of by-product gas in the tail gas remains below the etching threshold for several pulse cycles, it is determined that the ceramic coating has been completely removed.

[0142] The detection unit 14 also includes an ultrasonic cleaning tank, which uses pure water to ultrasonically clean the workpiece to be treated after the ceramic coating has been completely removed.

[0143] The device 100 for removing ceramic coatings from carbon materials provided in this application controls the pressure, temperature, and gas flow into and out of the reaction chamber via a control unit 12, causing the ceramic coating to react chemically with the process gas. The byproduct gas in the reaction chamber is replaced by a replacement unit 13, and the removal status of the ceramic coating is detected by a detection unit 14. The workpiece to be treated with the ceramic coating completely removed is then cleaned. This device achieves precise and comprehensive removal of the ceramic coating without manual or mechanical processing, avoiding substrate scrapping, reducing the production cost of carbon-carbon composite materials, and improving the removal efficiency of the ceramic coating.

[0144] This application also provides a computer device 200, which includes a memory 21 and a processor 22. The memory 21 stores a computer program. When the computer program is executed by the processor 22, the processor 22 performs the above-mentioned method for removing the ceramic coating on the surface of carbon materials. For example, the processor 22 controls the control unit 12 to perform vacuuming and / or changing the pressure and temperature in the reaction chamber and / or introducing process gas into the reaction chamber; controls the replacement unit 13 to introduce inert gas into the reaction chamber to replace the by-product gas in the reaction chamber; and controls the detection unit 14 to detect the removal of the ceramic coating and clean the workpiece to be treated after the ceramic coating has been completely removed.

[0145] Specifically, processor 22 may include a central processing unit, or an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement embodiments of the present invention.

[0146] In some implementations, memory 21 may include a large-capacity memory for data or instructions.

[0147] For example, memory 21 includes a hard disk drive (HDD), a floppy disk drive, flash memory, optical disk, magneto-optical disk, Universal Serial Bus (USB) drive, or any combination of the above-mentioned memory.

[0148] For example, memory 21 may be located inside or outside the computer device 200.

[0149] In some possible implementations, the computer device 200 also includes a communication interface 23 and a bus 24. The processor 22, memory 21, and communication interface 23 are connected to the bus 24 and communicate with each other.

[0150] The communication interface 23 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0151] Bus 24 includes hardware and / or software that couples components of computer device 200 together. For example, and not to limit, bus 24 may include an accelerated graphics port or other graphics bus, an enhanced industry standard architecture bus, a front-side bus, a low pin count bus, a memory bus, or other suitable bus or any combination of the above buses.

[0152] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the method for removing the ceramic coating on the surface of the carbon material described above.

[0153] Computer-readable storage media include, but are not limited to, electronic, magnetic, optical, infrared, or other physical storage devices or apparatuses that may contain or store information such as executable instructions, data, etc. More specific examples of computer-readable storage media include electrical connections based on one or more wires, RAM (Random Access Memory), volatile memory, non-volatile memory, flash memory, storage drives (such as hard disk drives), SSDs (Solid State Disks), any type of storage disk (such as optical discs), or similar memory, or any suitable combination of the foregoing.

[0154] It should be noted that, in order to avoid repetition and improve the conciseness of the manual, the descriptions of the same or substantially similar technical features, structures or method steps in different implementations may be simplified or omitted.

[0155] It should be understood that those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for removing a surface ceramic coating of a carbon material, characterized by, The method comprises the following steps: vacuumizing a reaction chamber provided with a workpiece to be processed, so that the pressure in the reaction chamber is an initial pressure, and the temperature in the reaction chamber is raised to a target temperature; wherein the surface of the workpiece to be processed has a ceramic coating; raising the initial pressure to a target pressure, and introducing a process gas capable of reacting with the ceramic coating into the reaction chamber in a pulse cycle or pressure duration manner, so that the process gas chemically digests the ceramic coating; wherein the highest pressure in the reaction chamber in each pulse cycle is the target pressure, and the lowest pressure is the initial pressure; the pressure duration means that the pressure in the reaction chamber is maintained at the target pressure; introducing an inert gas into the reaction chamber to replace the byproduct gas in the reaction chamber; detecting the removal of the ceramic coating, and cleaning the workpiece to be processed with the ceramic coating completely removed.

2. The method according to claim 1, wherein the step of introducing the inert gas into the reaction chamber to replace the byproduct gas in the reaction chamber comprises: lowering the pressure in the reaction chamber to the initial pressure, and introducing the inert gas; raising the pressure in the reaction chamber to a preset pressure, and realizing at least one pressure cycle from the preset pressure to the initial pressure in the reaction chamber to replace the byproduct gas in the reaction chamber; in each pressure cycle, the inert gas is introduced when the pressure in the reaction chamber is the initial pressure; wherein the preset pressure is greater than the initial pressure and less than the target pressure.

3. The method according to claim 1, wherein the step of introducing the inert gas into the reaction chamber to replace the byproduct gas in the reaction chamber comprises: pulsively introducing the inert gas below a preset temperature into the reaction chamber to quench the surface of the workpiece to be processed; after a preset time, adjusting the pressure in the reaction chamber to the initial pressure to replace the byproduct gas in the reaction chamber.

4. The method according to claim 1, wherein the step of introducing the process gas capable of reacting with the ceramic coating into the reaction chamber in a pulse cycle comprises: in one pulse cycle, introducing the process gas when the pressure in the reaction chamber is the target pressure, so that the process gas reacts with the ceramic coating; collecting the byproduct gas generated by the reaction of the process gas with the ceramic coating to determine the characteristic peak intensity of a target substance in the byproduct gas; determining the concentration data of the target substance in the byproduct gas according to the characteristic peak intensity of the target substance, and determining that the reaction of the process gas with the ceramic coating is completed when the concentration data drops to a target concentration.

5. The method according to claim 4, wherein the step of introducing the process gas capable of reacting with the ceramic coating into the reaction chamber in a pulse cycle further comprises: determining the etching rate of the ceramic coating according to the characteristic peak intensity of the target substance in the pulse cycle. ​ ​ ​ ​ determining an etching rate curve of the adjacent two pulse cycles based on the respective etching rate in the adjacent two pulse cycles; if the curvature of the etching rate curve is lower than a preset curvature threshold, reducing the pressure and / or temperature in the reaction chamber in the next pulse cycle, and / or introducing the process gas mixed with the inert gas in the next pulse cycle, so that the process gas reacts with the ceramic coating.

6. The removal method of claim 4, wherein, the process gas introduced into the reaction chamber in the pulse cycle is capable of reacting with the ceramic coating, further comprising: determining the etching rate of the ceramic coating according to the characteristic peak intensity of the target substance in the pulse cycle; if the etching rate of the pulse cycle is lower than a preset rate threshold, increasing the pressure and / or temperature in the reaction chamber in the next pulse cycle, so that the process gas reacts with the ceramic coating.

7. The removal method of claim 1, wherein, the process gas is chlorine or chlorine-containing halide.

8. The removal method of claim 7, wherein, when the process gas is chlorine, the target temperature ranges from 1000℃ to 2000℃.

9. An apparatus for removing a surface ceramic coating of a carbon material, characterized by including: a reaction furnace (11) formed with a reaction chamber for accommodating a workpiece to be processed; wherein the surface of the workpiece to be processed has a ceramic coating; a control unit (12) for performing vacuumizing treatment on the reaction chamber provided with the workpiece to be processed, so that the pressure in the reaction chamber is an initial pressure, and controlling the temperature in the reaction chamber to increase to a target temperature; the control unit (12) is also used to increase the initial pressure to a target pressure, and introduce a process gas capable of reacting with the ceramic coating into the reaction chamber in a pulse cycle or pressure-continuous manner, so that the process gas chemically digests the ceramic coating; wherein the highest pressure in the reaction chamber in each pulse cycle is the target pressure, and the lowest pressure is the initial pressure; the pressure-continuous means that the pressure in the reaction chamber is maintained at the target pressure; a replacement unit (13) for receiving an inert gas and introducing the inert gas into the reaction chamber to replace the byproduct gas in the reaction chamber; a detection unit (14) for detecting the removal of the ceramic coating, and cleaning the workpiece to be processed with the ceramic coating completely removed.

10. A computer device, comprising: a memory (21) and a processor (22), the memory (21) stores a computer program, and the computer program is executed by the processor (22) to make the processor (22) execute the removal method of the ceramic coating on the surface of the carbon material as claimed in any one of claims 1-8.

Images