Positive photosensitive organic insulating film composition with high heat resistance

Abstract

The invention relates to a high-heat-resistance positive photosensitive organic insulating film composition. The invention belongs to the technical field of photoresist, and discloses acrylic copolymer resin which comprises an acrylic monomer AA containing a phthalimide derivative, an acrylic monomer AB containing an epoxy group and an acrylic monomer AC containing carboxyl. The invention also discloses a positive photosensitive organic insulating film composition containing the acrylic copolymer resin as a main component, and a photoresist formed by curing the acrylic copolymer resin has very high heat resistance, relatively high hardness and adhesive force, can be used for preparing a thin film transistor in liquid crystal display and the like, and has a wide application prospect.

Description

Technical Field

[0001] This invention belongs to the field of photoresist technology and relates to a photoresist composition, specifically a high heat-resistant positive photosensitive organic insulating film composition. Background Technology

[0002] In modern display technology, photosensitive organic insulating film (photoresist) is a crucial material, primarily used in the fabrication of thin-film transistors (TFTs). The main functions of photosensitive organic insulating film (photoresist) include planarization, reduction of parasitic capacitance, and increase of aperture ratio. The performance of the photosensitive organic insulating film directly affects the performance of the TFT and the display effect. Core performance characteristics of photosensitive organic insulating film include photosensitivity, resolution, residual film rate, transmittance, and adhesion.

[0003] In the field of photoresist, the focus is mainly on performance indicators such as photosensitivity, resolution, residual film rate, and transmittance, while heat resistance is often overlooked. The main component of photosensitive organic insulating films, the photosensitive resin, is an acrylic resin such as polymethyl methacrylate (PMMA) or a copolymer resin containing PMMA. Conventional acrylic monomers have limited heat resistance. Other types of photosensitive resins include polybenzoxazole derivatives (see patent documents with publication numbers WO2012 / 172793A1, WO2017 / 134701A1, and CN116149140A) and alkali-soluble polyimide resins (see publication number WO2013 / 048069). Patent documents A1 and CN117806124A), phenolic hydroxyl polyamide resin (see patent document CN115220305A), polyamide-b-amide acid polymer (see patent document CN115433358A), benzocyclobutene (see patent document CN105575930A), and our previously developed acrylic copolymer resin (see patent document CN119805865A), etc.

[0004] Photosensitive polyimide (PI), polybenzodioxazole (PBO), and benzocyclobutene (BCB) are currently the most widely used photosensitive polymers. Each of these three materials has its advantages and disadvantages, but they also have some drawbacks in practical applications: photosensitive polyimide materials have high water absorption and significant film thickness loss during post-curing; benzocyclobutene materials have poor tensile properties, and in some applications, they cannot solve the material stability problem caused by long-term thermal expansion and contraction leading to device deformation; photosensitive polybenzodioxazole cannot solve the problem of significant film thickness loss during processing. Therefore, photosensitive compositions containing polyimide, polybenzodioxazole, and benzocyclobutene require further improvement.

[0005] Existing photosensitive organic insulating film materials generally lack sufficient heat resistance. Although polyamide-β-amic acid polymers have high heat resistance, they are expensive, have low transmittance, and the hardness and adhesion of the photoresist formed after curing are limited. The heat resistance of the photoresist directly affects the thermal stability of the aperture CD (critical dimension) after exposure. Organic insulating films with low heat resistance will experience aperture deformation during post-baking, which seriously affects product performance. Summary of the Invention

[0006] To address the aforementioned technical problems, we conceived a novel structure by introducing heat-resistant groups into acrylic copolymer resins. Through numerous comparative experiments, we developed a positive photosensitive organic insulating film composition exhibiting high heat resistance, high hardness, and strong adhesion. Specifically, this invention includes the following technical solutions.

[0007] Another aspect of the present invention is to provide an acrylic copolymer resin A, the molecular structure of which is shown below, comprising the following structural units, more preferably mainly composed of the following structural units: an acrylic monomer AA containing a phthalimide group as the first structural unit, an acrylic monomer AB containing an epoxy group as the second structural unit, and an acrylic monomer AC containing a carboxyl group as the third structural unit:

[0008]

[0009] Where X represents the side chain structure of AA1 and AA2 in the first structural unit; Y represents the side chain structure of AB1-AB6 in the second structural unit; and Z represents methyl or hydrogen.

[0010] Those skilled in the art will readily understand that the term "composed of" is not an absolute coverage and also includes the presence of substances added as needed or necessary by design, such as other comonomers, polymerization initiator components, or residues.

[0011] In the acrylic copolymer resin A, the first structural unit AA is selected from the molecular structural formula AA1 or AA2 represented by the following chemical formula 1:

[0012] [Chemical Formula 1]

[0013] ,

[0014] Wherein, the substituent R1 in AA1 can be any one of the following structural formulas:

[0015]

[0016] ,

[0017] Substituent R2 is a group consisting of an aliphatic chain comprising one or more carbon atoms (C) and one or more oxygen atoms (O), wherein the aliphatic chain is selected from methyl, ethyl, propyl, butyl, pentyl, hexyl, cyclohexyl, etc.

[0018] The substituents R3, R4, R5, R6, and R7 in AA2 are each independently selected from the following molecular structural formulas:

[0019]

[0020] The second structural unit AB is selected from one of the molecular structural formulas AB1 to AB6 represented by the following chemical formula 6:

[0021] [Chemical Formula 6]

[0022] ,

[0023] The third structural unit AC is selected from either the molecular structural formula AC1 or AC2 represented by chemical formula 7:

[0024] [Chemical Formula 7]

[0025] .

[0026] In one embodiment, the first structural unit AA1 is selected from one of the molecular structural formulas AA1-1 to AA1-72:

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[0050] In one embodiment, the first structural unit AA2 is selected from one of the molecular structural formulas AA2-1 to AA2-72:

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[0075] Preferably, in the above-mentioned acrylic copolymer resin A, the monomer AA represented by chemical formula 1 has a weight fraction of 5%-50%; the monomer AB represented by chemical formula 6 has a weight fraction of 5%-80%; and the monomer AC represented by chemical formula 7 has a weight fraction of 5%-50%.

[0076] Furthermore, the weight-average molecular weight Mw (mol / g) of the aforementioned acrylic copolymer resin A is 2000-50000.

[0077] A second aspect of the present invention is to provide a method for preparing acrylic copolymer resin A as described above, comprising the following steps: placing monomers AA, AB, and AC, an initiator azo compound such as azobisisobutyronitrile (AIBN), and a solvent PGMEA in a reaction vessel, purging with nitrogen for protection, heating to 60-75°C, stirring and reacting to obtain a resin A solution.

[0078] In one embodiment, the above method includes the following steps: placing about 5.0 parts by weight of monomer AA, about 10.0 parts by weight of AB, about 5.0 parts by weight of AC, about 0.5 parts by weight of initiator azobisisobutyronitrile, and about 80.0 parts by weight of solvent PGMEA in a jacketed reactor, introducing nitrogen to remove oxygen, heating to 65°C, and reacting for 24 hours with stirring to obtain resin A solution.

[0079] Unless otherwise defined, in describing numerical characteristics, the terms “about,” “approximately,” or “around” refer to a range that reasonably fluctuates around the stated value. The range of numerals used in this document includes the numeral itself and any number within that range.

[0080] A third aspect of the present invention is to provide a positive photosensitive organic insulating film composition (positive photoresist composition), which includes, as described above, an acrylic copolymer resin A, a diazonaphthoquinone photosensitizer B, a sensitizer C, a silane coupling agent D, a leveling agent E, an organic solvent F, etc.

[0081] Acrylic copolymer resin A is the main component of the composition.

[0082] Preferably, in the above-described positive photosensitive organic insulating film composition, the diazonoquinone photosensitizer B is selected from one or a mixture of two or more compounds shown in Formulas 8-1 to 8-5 of the following group:

[0083]

[0084] Formula 8-1 Formula 8-2 Formula 8-3

[0085]

[0086] Equation 8-4, Equation 8-5,

[0087] In this configuration, the substituents D may be the same or different, and each is independently selected from hydrogen atoms, groups shown in Formula 8-6 or Formula 8-7, and at least one D is not a hydrogen atom.

[0088]

[0089] Formula 8-6 Formula 8-7.

[0090] In one embodiment, the diazonoquinone compound is selected from one or more of 1,2-diazonaphthoquinone-4-sulfonate, 1,2-diazonaphthoquinone-5-sulfonate, and 1,2-diazonaphthoquinone-6-sulfonate.

[0091] For example, 1,2-diazonaphthoquinone-5-sulfonate includes one or more of the following: 2,3,4'-trihydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate prepared by esterification of trihydroxybenzophenone and 2-diazo-1-naphthoquinone-5-sulfonate; 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate prepared by esterification of tetrahydroxybenzophenone and 2-diazo-1-naphthoquinone-5-sulfonate; compounds prepared by esterification of polyhydroxybenzophenone and 1,2-diazonaphthoquinone; and compounds prepared by esterification of polyhydroxybenzophenone and 1,2-diazonaphthoquinone and 2-diazo-1-naphthoquinone-5-sulfonate.

[0092] In some embodiments, the mass ratio of diazonaphthoquinone photosensitizer B to acrylic copolymer resin is 0.01-0.4:1, preferably 0.1-0.3:1. Such a mass ratio is beneficial for the formation and development of patterns after exposure of the positive photoresist composition.

[0093] Preferably, in the above-described positive photosensitive organic insulating film composition, the sensitizer C is selected from one or a mixture of two or more compounds shown in Formulas 9-1 to 9-5 of the following group:

[0094]

[0095] Equation 9-1 Equation 9-2 Equation 9-3

[0096]

[0097] Equation 9-4 Equation 9-5.

[0098] In one embodiment, the mass ratio of sensitizer C to acrylic copolymer resin A is 0~0.3:1.

[0099] Preferably, in the above-mentioned positive photosensitive organic insulating film composition, the silane coupling link D is selected from one or a mixture of two or more members of the following group: trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetylsilane, vinyltrimethoxysilane, γ-isocyanate propyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, and 2-(3',4'-epoxycyclohexyl)ethyltrimethoxysilane.

[0100] In one embodiment, the mass ratio of silane coupling agent D to acrylic copolymer resin A is 0-0.1:1, preferably 0.001-0.05:1, which is beneficial to improving the adhesion between the positive photoresist composition and the substrate;

[0101] Further, the leveling agent E mentioned above is selected from one or a mixture of two or more members of the following group: BYK-333 (manufactured by BYKCHEMIE Co., Ltd.), R-08 (manufactured by DIC Corporation), R-475 (manufactured by DIC Corporation), R-30 (manufactured by DIC Corporation), BM-1000 (manufactured by BMCHEMIE Corporation), BM-1100 (manufactured by BMCHEMIE Corporation), FLUORADE FC-135 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-170C (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-430 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-431 (manufactured by Sumitomo 3M Co., Ltd.), SAFLON S-112 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-113 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-131 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-141 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-145 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-382 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-101 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-102 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-103 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-104 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-105 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-106 (manufactured by Asahi Glass Co., Ltd.), SH-28PA (manufactured by Toray Silicone Co., Ltd.), SH-190 (manufactured by Toray Silicone Co., Ltd.), SH-193 (manufactured by Toray Silicone Co., Ltd.), SZ-6032 (manufactured by Toray Silicone Co., Ltd.), SF-8428 (manufactured by Toray Silicone Co., Ltd.), DC-57 (manufactured by Toray Silicone Co., Ltd.), DC190 (manufactured by Toray Silicone Co., Ltd.);

[0102] In one embodiment, the mass ratio of leveling agent E to acrylic copolymer resin A is 0.001-0.05:1, preferably 0.001-0.02:1, which facilitates the coating of the positive photoresist composition on the substrate.

[0103] Optionally, the organic solvent F is selected from one or more members of the following group: propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and methyl methoxypropionate.

[0104] In one embodiment, the above-mentioned positive photosensitive organic insulating film composition is prepared by a method comprising the following steps: mixing acrylic copolymer resin A, diazonaphthoquinone photosensitizer B, sensitizer C, silane coupling agent D, and leveling agent E, and then adding organic solvent F to obtain a mixture, controlling the viscosity of the mixture to be 3 cPs-20 cPs, for example, 3 cPs, 5 cPs, 8 cPs, 10 cPs, 13 cPs, 15 cPs, 18 cPs, 20 cPs or any combination thereof, to obtain a positive organic insulating film (photoresist) composition.

[0105] A fourth aspect of the present invention is to provide the use of the positive photosensitive organic insulating film composition (positive photoresist composition) as described above in the preparation of electronic devices such as thin-film transistors (TFTs) in liquid crystal displays (LCDs), surface passivation protective films in integrated circuit manufacturing and packaging, and interlayer insulating films in multilayer metal interconnect circuits.

[0106] In one embodiment, the positive photosensitive organic insulating film composition (positive photoresist composition) described above is spin-coated onto the surface of a structural substrate, such as a thin-film transistor (TFT) substrate in a liquid crystal display (LCD), to form an organic insulating film.

[0107] Furthermore, the organic insulating film is sequentially exposed, developed, and then baked, wherein the developer includes an alkaline solution.

[0108] In practice, after the positive photoresist composition is shaped and exposed, it is developed with an alkaline developer. The exposed part of the positive photoresist composition is dissolved and removed after the alkaline developer reacts with the acid and alkali, leaving the positive image of the unexposed part.

[0109] A fifth aspect of the present invention is to provide an electronic device, wherein the surface of the substrate of the electronic device comprises an organic insulating film formed by curing the positive photosensitive organic insulating film composition as described above. The electronic device is, for example, a preform such as a thin-film transistor (TFT) in a liquid crystal display (LCD).

[0110] This invention develops a novel photosensitive resin, an acrylic copolymer resin, and further develops a novel positive photosensitive organic insulating film (positive photoresist) composition. Through the synthesis of the acrylic resin, a special heat-resistant group—phthalimide derivative group—is introduced. Compared with existing technologies, this significantly improves the heat resistance of the organic insulating film, reduces deformation of the aperture pattern after exposure and development, and is beneficial to the thermal stability of the aperture pattern after exposure. Moreover, compared with existing technologies, it has higher hardness and adhesion, making it particularly suitable for the fabrication of thin-film transistors (TFTs) in liquid crystal displays (LCDs), with broad application prospects. Attached Figure Description

[0111] Figure 1 The Fourier transform infrared (FT-IR) spectrum of the synthetic example A-1 resin of the present invention is shown. In the IR spectrum, 3350 cm⁻¹... -1 The broad peak is the absorption peak of the OH stretching vibration; 2936 cm⁻¹ -1 It is the absorption peak of the CH stretching vibration; 1850-1700 cm⁻¹ -1 The absorption peaks are those of the C=O stretching vibration of acrylate and the NC=O absorption peak of imide, with some overlap; 1614 cm⁻¹ -1 It is the absorption peak of the skeletal vibration of the benzene ring; 1300-1000 cm⁻¹ -1 The broad peak is the absorption peak of the CO stretching vibration. This indicates that the synthetic resin contains structures such as acrylate, benzene ring, imide, epoxy, and carboxylic acid.

[0112] Figure 2 The proton nuclear magnetic resonance spectrum of the synthetic example A-1 resin of the present invention is shown. 1 The 1H NMR spectrum was obtained using deuterated DMSO (d-DMSO) as the solvent. In the 1H NMR spectrum, peaks at 6-8 ppm indicate the presence of benzene ring groups and o-benzoimide groups, representing the AA1 monomer component; 4-5 ppm indicates the presence of epoxy monomers, representing the AB1 monomer component; and 9-10 ppm represents the carboxylic acid peak, representing the AC1 monomer component. These peak information indicate that the resin synthesis was effective.

[0113] Figure 3 The gel permeation chromatogram (GPC) showing the weight-average molecular weight of the synthetic example A-1 resin of the present invention is displayed, with tetrahydrofuran (THF) as the mobile phase.

[0114] Figure 4 The images show photographs evaluating the heat resistance of the photoresist of Example 1 and Comparative Example 1 of the present invention. The upper image is of Example 1, and the lower image is of Comparative Example 1. In the upper image (Example 1), the left side is a microscope photograph, and the right side is a scanning electron microscope (SEM) image; after heat resistance treatment, the opening remains rectangular. In the lower image (Comparative Example 1), the left side is a microscope photograph, and the right side is a scanning electron microscope (SEM) image; after heat resistance treatment, due to poor heat resistance, the opening becomes rounded and elliptical.

[0115] Figure 5 The images show hardness evaluation photographs of the photoresist of Example 1 and Comparative Example 1 of the present invention. The upper image is an image of the photoresist surface of Example 1 scratched with a pencil, and the lower image is an image of the photoresist surface of Comparative Example 1 scratched with a pencil. In the upper image (Example 1), no scratches were found when using a pencil with a hardness of 3H; in the lower image (Comparative Example 1), the left side shows no scratches when using a pencil with a hardness of H, while the right side shows scratches when using a pencil with a hardness of 2H.

[0116] Figure 6The images show substrate adhesion evaluation photographs of the photoresist of Example 1 and Comparative Example 1 of the present invention. The left image shows adhesion of Example 1 at 5B; the right image shows adhesion of Comparative Example 1 at 2B. Detailed Implementation

[0117] This invention is the first to synthesize an acrylic resin containing phthalimide derivative groups, which improves the heat resistance of positive photosensitive organic insulating films, i.e., photoresists. It can be applied to the fabrication process of thin-film transistors (TFTs) in liquid crystal displays (LCDs), which is beneficial to improving the thermal stability of aperture size and thus improving product yield.

[0118] The photoresist composition provided by this invention can form a highly heat-resistant organic insulating film (photoresist) on the surface of a substrate through curing. As used herein, the term "high heat resistance" means "high thermal stability," referring to the photoresist's resistance to deformation at temperatures above 210°C, preferably above 220°C, more preferably above 230°C, even more preferably above 240°C, and for example above 250°C. For example, at temperatures above 230°C, a 10μm CD square hole formed in the photoresist will not become rounded due to thermal softening.

[0119] The physicochemical properties of photosensitive resins directly determine the mechanical properties of organic insulating films (photoresists). The special chemical structure of acrylic copolymer resin A developed in this invention endows positive photosensitive organic insulating films (photoresists) with good thermal stability, hardness, and substrate adhesion.

[0120] For ease of description, the "positive photosensitive organic insulating film composition" of the present invention is sometimes referred to as "positive (type) photosensitive insulating film composition", "positive photosensitive insulating film composition", "photosensitive resin composition", "positive photoresist composition", etc., or simply as "photoresist composition". They all have the same meaning and can be used interchangeably.

[0121] In addition to acrylic copolymer resin A, the positive photosensitive organic insulating film composition also contains at least diazonaphthoquinone photosensitizer B, sensitizer C, silane coupling agent D, leveling agent E, and organic solvent F.

[0122] In the positive photosensitive organic insulating film composition (positive photoresist composition) provided by the present invention, the diazonaquinone photosensitizer B includes a diazonaquinone compound. In specific embodiments, the diazonaquinone compound specifically includes one or more of the compounds shown in Formulas 8-1 to 8-5 above, such as one or two of the compounds shown in Formulas 8-6 and 8-7.

[0123] Generally, diazonoquinone compounds are obtained by esterification of diazonoquinone sulfonate halides and phenolic compounds under a weakly alkaline environment.

[0124] Specifically, phenolic compounds include 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,2' or 4,4'-tetrahydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4,2'-tetrahydroxy4'-methylbenzophenone, 2,3,4,4'-tetrahydroxy3'-methoxybenzophenone, 2,3,4,2' or 2,3,4,6'-pentahydroxybenzophenone, 2,4,6,3', 2,4,6,4' or 2,4,6,5'-hexahydroxybenzophenone, 3,4,5,3', 3,4... One or more of the following: 5,4' or 3,4,5,5'-hexahydroxybenzophenone, bis(2,4-dihydroxybenzene)methane, bis(p-hydroxybenzene)methane, tri(p-hydroxybenzene)methane, 1,1,1-tri(p-hydroxybenzene)ethane, bis(2,3,4-trihydroxybenzene)methane, 2,2-bis(2,3,4-trihydroxybenzene)propane, 1,1,3-tris(2,5-dimethyl4-hydroxybenzene)-3-phenylpropane, 4,4'-[1-[4-[1-[4-hydroxybenzene]-1-methylethyl]phenyl]ethylidene]bisphenol, and bis(2,5-dimethyl4-hydroxybenzene)-2-hydroxybenzane.

[0125] In specific implementation, the diazononaphthoquinone compound includes one or more of 1,2-diazonaphthoquinone-4-sulfonate, 1,2-diazonaphthoquinone-5-sulfonate, and 1,2-diazonaphthoquinone-6-sulfonate.

[0126] For example, 1,2-diazonaphthoquinone-5-sulfonate includes one or more of the following: 2,3,4'-trihydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate prepared by esterification of trihydroxybenzophenone and 2-diazo-1-naphthoquinone-5-sulfonate; 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazonaphthoquinone-5-sulfonate prepared by esterification of tetrahydroxybenzophenone and 2-diazo-1-naphthoquinone-5-sulfonate; compounds prepared by esterification of polyhydroxybenzophenone and 1,2-diazonaphthoquinone; and compounds prepared by esterification of polyhydroxybenzophenone and 1,2-diazonaphthoquinone and 2-diazo-1-naphthoquinone-5-sulfonate.

[0127] Generally, diazonazone compounds are obtained by esterification of diazonazone sulfonic acid halides and phenolic compounds under a weakly alkaline environment. The degree of esterification of diazonazone compounds refers to the ratio of the number of hydroxyl groups in the phenolic compounds used to prepare diazonazone compounds to the total number of hydroxyl groups before esterification, that is, the ratio of the number of ester groups in diazonazone compounds to the total number of ester groups and hydroxyl groups.

[0128] In some embodiments, the degree of esterification of the diazonoquinone compound is 50% to 85%, for example, 50%, 60%, 65%, 70%, 75%, 80%, 85%, or any combination thereof, which is beneficial for improving the residual film yield and storage stability of the positive photoresist composition.

[0129] In some embodiments, the positive photoresist composition satisfies the following condition: 0 < a ≤ 0.4, where a is the mass ratio of the photosensitizer to the acrylic copolymer resin, for example, a range of 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.20, 0.25, 0.30, 0.35, 0.40 or any combination thereof, preferably 0.1 ≤ a ≤ 0.3, which is beneficial for the formation and development of patterns after exposure of the positive photoresist composition.

[0130] Generally, sensitizer C contains hydroxyphenyl groups, specifically including compounds shown in Formulas 9-1 to 9-5 above, which is beneficial for increasing the photosensitivity of positive photoresist compositions.

[0131] In practice, the mass ratio of the sensitizer to the acrylic copolymer resin is 0 to 0.3, for example, 0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.15, 0.2, 0.25, 0.3, or any combination thereof.

[0132] Generally, silane coupling agent D includes one or more of the following: silane coupling agent with a carboxyl group, silane coupling agent with a methylpropyl acyl group, silane coupling agent with an isocyanate group, and silane coupling agent with an epoxy group. Specifically, it includes one or more of the following: trimethoxysilylbenzoic acid, γ-methacryloyloxypropyltrimethoxysilane, vinyltriacetylsilane, vinyltrimethoxysilane, γ-isocyanatepropyltriethoxysilane, γ-epoxypropoxypropyltrimethoxysilane, and 2-(3',4'-epoxycyclohexyl)ethyltrimethoxysilane.

[0133] The mass ratio of silane coupling agent to acrylic copolymer resin is 0 to 0.1, preferably 0.001 to 0.05, for example, 0.001, 0.002, 0.003, 0.004, 0.005, 0.01, 0.02, 0.03, 0.04, 0.05, or any combination thereof, which is beneficial to improving the adhesion between the positive photoresist composition and the substrate.

[0134] Generally, leveling agents E include one or more of fluorinated surfactants and silicone surfactants, specifically including BYK-333 (manufactured by BYKCHEMIE Co., Ltd.), R-08 (manufactured by DIC Corporation), R-475 (manufactured by DIC Corporation), R-30 (manufactured by DIC Corporation), BM-1000 (manufactured by BMCHEMIE Corporation), BM-1100 (manufactured by BMCHEMIE Corporation), FLUORADE FC-135 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-170C (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-430 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-431 (manufactured by Sumitomo 3M Co., Ltd.), SAFLON S-112 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-113 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-131 (manufactured by Asahi Glass Co., Ltd.), SAFLON... S-141 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-145 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-382 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-101 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-102 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-103 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-104 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-105 (manufactured by Asahi Glass Co., Ltd.), SAFLON One or more of the following: SC-106 (manufactured by Asahi Glass Co., Ltd.), SH-28PA (manufactured by Toray Silicone Co., Ltd.), SH-190 (manufactured by Toray Silicone Co., Ltd.), SH-193 (manufactured by Toray Silicone Co., Ltd.), SZ-6032 (manufactured by Toray Silicone Co., Ltd.), SF-8428 (manufactured by Toray Silicone Co., Ltd.), DC-57 (manufactured by Toray Silicone Co., Ltd.), and DC190 (manufactured by Toray Silicone Co., Ltd.).

[0135] Furthermore, a mass ratio of leveling agent to acrylic copolymer resin of 0.001 to 0.05, preferably 0.001 to 0.02, such as 0.001, 0.002, 0.003, 0.004, 0.005, 0.01, 0.02 or any combination thereof, is beneficial for coating the positive photoresist composition onto the substrate.

[0136] Generally, organic solvent F includes one or more of the following: propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, methyl methoxypropionate, etc.

[0137] In specific implementation, the mixed monomer raw materials AA, AB, and AC are copolymerized under the action of an initiator to obtain an acrylic copolymer resin; the acrylic copolymer resin, photosensitizer, sensitizer, and leveling agent are mixed, and a solvent is added to obtain a mixture. The viscosity of the mixture is controlled to be 3 cPs-20 cPs, for example, 3 cPs, 5 cPs, 8 cPs, 10 cPs, 13 cPs, 15 cPs, 18 cPs, 20 cPs, or any combination thereof, to obtain a positive organic insulating film (photoresist) composition.

[0138] Initiators include azo compounds, specifically azobisisobutyronitrile (AIBN).

[0139] Those skilled in the art will readily understand that, in addition to the essential components described above, the positive photosensitive organic insulating film composition may also contain other auxiliary ingredients, such as corrosion inhibitors, tackifiers, solubilizers, solvent inhibitors, and other chemical products that can be used to prepare photoresists, to meet specific performance requirements. The principle for adding these auxiliary agents is that they will not substantially impair the basic physical properties of the final cured film of the present invention, and the addition of these auxiliary agents often improves the processing properties of the material or enhances certain characteristics of the final cured film, thus making it more suitable for certain processes.

[0140] For example, the role of the corrosion inhibitor is to suppress discoloration and stability reduction caused by copper corrosion when the photosensitive resin composition of the present invention is applied to a copper or copper alloy substrate. At least one compound containing a triazole ring, an imidazole ring, and a thiazole ring containing carbon and nitrogen atoms can be added to the composition.

[0141] The function of the tackifier is to improve the adhesion between the cured film formed from the photosensitive resin composition of the present invention and the substrate. Adhesive additives (tackifiers) can be arbitrarily mixed into the photosensitive resin composition. Tackifiers can be organosilane compounds or aluminum-based adhesive additives such as tris(ethylacetoacetyl)aluminum, tris(acetylacetone)aluminum, and ethylaluminum diisopropyl acetoacetate. From the perspective of improving adhesion to substrates such as copper, organosilane compounds are preferred.

[0142] The function of a solubility accelerator is to increase the dissolution rate of the exposed portion in a photosensitive resin composition, thereby improving the contrast of the micro-pattern. Examples of solubility accelerators include compounds having hydroxyl or carboxyl groups. Examples of compounds having hydroxyl groups include p-isopropylphenylphenol, resorcinols, bisphenols, linear or non-linear phenolic compounds, phenolic derivatives of diphenylmethane with 2 to 5 substituted groups, and phenolic derivatives of 3,3-diphenylpropane with 1 to 5 substituted groups.

[0143] The function of a solvent inhibitor is to suppress the dissolution of photosensitive resin. There are no particular limitations on the solvent inhibitor component, as long as it reduces the dissolution rate of the photosensitive resin in alkaline aqueous solutions. Solvent inhibitors adjust development time and film thickness loss by reducing the solubility of the photosensitive resin in the darker areas of exposure. Commonly used compounds as solvent inhibitors include diphenyliodonium tetrafluoroborate, diphenyliodonium nitrate, diphenyliodonium tetrafluorophosphate, diphenyliodonium tetrafluoroarsenate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium trifluoroacetate, diphenyliodonium-p-toluenesulfonate, 4-methoxyphenylphenyliodonium tetrafluoroborate, 4-methoxyphenylphenyliodonium hexafluorophosphonate, 4-methoxyphenylphenyliodonium hexafluoroarsenate, 4-methoxyphenylphenyliodonium hexafluoroarsenate, 4-methoxyphenylphenyliodonium hexafluoroarsenate, etc. Oxyphenylphenyliodonium trifluoromethanesulfonate, 4-methoxyphenylphenyliodonium trifluoroacetate, 4-methoxyphenylphenyliodonium p-toluenesulfonate, bis(4-tert-butylphenyl)iodonium tetrafluoroborate, bis(4-tert-butylphenyl)iodonium hexafluoroarsenate, bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, bis(4-tert-butylphenyl)iodonium trifluoroacetate, bis(4-tert-butylphenyl)iodonium-p-toluenesulfonate, etc.

[0144] The positive organic insulating film (photoresist) composition of the present invention is used in the following steps, for example: coating the positive photoresist composition on the surface of a substrate such as a thin-film transistor (TFT) in an electronic device such as a liquid crystal display (LCD), and drying it into a film as needed to obtain an organic insulating film, i.e., a photosensitive resin layer; exposing the organic insulating film to exposure, development and post-baking in sequence; wherein the developer includes an alkaline solution.

[0145] As a coating method, methods commonly used for coating photosensitive resin compositions can be used, such as coating with a spin coater, bar coater, doctor blade coater, curtain coater, screen printing machine, etc., or spray coating with a spray coater.

[0146] As needed, coatings formed from positive organic insulating film (photoresist) compositions can be dried. Drying methods include air drying, drying with an oven or heating plate, and vacuum drying.

[0147] Examples of suitable substrates include glass, semiconductors, metal oxide insulators such as TiO2 and SiO2, silicon nitride, copper, and copper alloys.

[0148] In practice, after the positive photoresist composition is shaped and exposed, it is developed with an alkaline developer. The exposed part of the positive photoresist composition is dissolved and removed after the alkaline developer reacts with the acid and alkali, leaving the positive image of the unexposed part.

[0149] To make the present invention more apparent and understandable, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0150] Example

[0151] The embodiments involve the addition amount, content and concentration of various substances. Unless otherwise specified, the "parts" mentioned therein refer to "parts by weight"; unless otherwise specified, the percentage content refers to the mass percentage content.

[0152] In the embodiments described herein, unless otherwise specified, the temperature generally refers to room temperature (15-35°C).

[0153] Performance evaluation of photosensitive resin compositions:

[0154] 1. Heat resistance evaluation

[0155] After spin-coating the positive photoresist composition solutions of the examples and comparative examples onto a transparent substrate, the coated surface was pre-dried by heating (pre-drying at 100°C for 90 seconds) to form a thin film. The formed film was then exposed through a photomask with a 10 μm pattern. After exposure, it was developed in a tetramethylammonium hydroxide (TMAH) aqueous solution at 25°C for 90 seconds, rinsed with pure water for 1 minute, and then heated in an oven at 230°C for 30 minutes to form a pattern. A 10 μm CD with square openings is considered to have good heat resistance. Photoresist with poor heat resistance will cause square openings to become rounded due to thermal softening.

[0156] 2. Hardness Evaluation

[0157] Except for the absence of a photomask, the cured film follows the same steps as the pattern described above. The hardness of the cured film is then tested using a pencil hardness tester. The hardness is measured by scratching the film with a standard pencil (Mitsubishi Pencil / uni: 1~6H, HB, 1~6B) under a load of 750g. The hardness is indicated by comparing the pencil without scratch marks to the result. A hardness of 3H or higher is considered good.

[0158] 3. Substrate adhesion evaluation

[0159] Except for the absence of a photomask, the curing process is identical to the pattern described above. The adhesion between the cured film and the flexible substrate is tested using a cross-cut adhesion test. Using the ATSM-D3359 method, 100 checkerboard markings are formed on the cured film using a corner cutter, followed by peeling with 3M tape. An adhesion of 5B across the 100 peel marks is considered good.

[0160] Example 1: Synthesis of acrylic copolymers

[0161] [Synthesis Example A-1] Synthesis

[0162] 5.0g of AA1-1, 10.0g of AB1, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-1 resin solution.

[0163] The Fourier Transmission Infrared Spectrum (FT-IR) of Resin A-1 is as follows: Figure 1 As shown; 1H NMR spectrum ( 1 H NMR) such as Figure 2 As shown; the weight-average molecular weight, measured by GPC (gel permeation chromatography), is 11550 g / mol. Figure 3 As shown.

[0164] [Synthesis Example A-2] Synthesis

[0165] 5.0g of AA1-3, 10.0g of AB1, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-2 resin solution.

[0166] [Synthesis Example A-3] Synthesis

[0167] AA1-5 5.0g, AB1 10.0g, AC1 5.0g, initiator azobisisobutyronitrile 0.5g, and solvent PGMEA 80.0g were placed in a jacketed reactor, nitrogen gas was introduced to remove oxygen, the temperature was raised to 65℃, and the reaction was carried out for 24h with stirring to obtain A-3 resin solution.

[0168] [Synthesis Example A-4] Synthesis

[0169] 5.0g of AA1-49, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-4 resin solution.

[0170] [Synthesis Example A-5] Synthesis

[0171] 5.0g of AA1-51, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-5 resin solution.

[0172] [Synthesis Example A-6] Synthesis

[0173] 5.0g of AA1-53, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-6 resin solution.

[0174] [Synthesis Example A-7] Synthesis

[0175] 5.0g of AA2-1, 10.0g of AB1, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-7 resin solution.

[0176] [Synthesis Example A-8] Synthesis

[0177] 5.0g of AA2-3, 10.0g of AB1, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 0.0g of solvent PGMEA8 were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-8 resin solution.

[0178] [Synthesis Example A-9] Synthesis

[0179] 5.0g of AA2-5, 10.0g of AB1, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-9 resin solution.

[0180] [Synthesis Example A-10] Synthesis

[0181] 5.0g of AA2-49, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-10 resin solution.

[0182] [Synthesis Example A-11] Synthesis

[0183] 5.0g of AA2-51, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-11 resin solution.

[0184] [Synthesis Example A-12] Synthesis

[0185] 5.0g of AA2-53, 10.0g of AB2, 5.0g of AC1, 0.5g of initiator azobisisobutyronitrile, and 80.0g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65℃. The reaction was carried out for 24 hours with stirring to obtain A-12 resin solution.

[0186] [Comparative Synthesis Example MMA-1] Synthesis

[0187] 5.0 g of methyl methacrylate (MMA), 10.0 g of AB1, 5.0 g of AC1, 0.5 g of initiator azobisisobutyronitrile (AIBN), and 80.0 g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65°C. The reaction was carried out for 24 h with stirring to obtain MMA-1 resin solution.

[0188] [Comparative Synthesis Example MMA-2] Synthesis

[0189] 5.0 g of methyl methacrylate (MMA), 10.0 g of AB2, 5.0 g of AC1, 0.5 g of initiator azobisisobutyronitrile (AIBN), and 80.0 g of solvent PGMEA were placed in a jacketed reactor. Nitrogen gas was introduced to purge oxygen, and the temperature was raised to 65°C. The reaction was carried out for 24 h with stirring to obtain an MMA-2 resin solution.

[0190] [Comparative Synthesis Example St-1] Synthesis

[0191] Styrene St 5.0g, AB1 10.0g, AC1 5.0g, initiator azobisisobutyronitrile 0.5g, and solvent PGMEA 80.0g were placed in a jacketed reactor, nitrogen gas was introduced to remove oxygen, the temperature was raised to 65℃, and the reaction was carried out for 24h with stirring to obtain St-1 resin solution.

[0192] [Comparative Synthesis Example St-2] Synthesis

[0193] Styrene St 5.0g, AB2 10.0g, AC1 5.0g, initiator azobisisobutyronitrile 0.5g, and solvent PGMEA 80.0g were placed in a jacketed reactor, nitrogen gas was introduced to remove oxygen, the temperature was raised to 65℃, and the reaction was carried out for 24h with stirring to obtain St-2 resin solution.

[0194] Example 2: Preparation of a positive photoresist resin composition

[0195] 100 parts by weight (solids) of the acrylic copolymers obtained in Synthetic Examples 1-12 and Comparative Synthetic Examples 1-4 were added to a mixing tank equipped with a light-shielding agent and a stirrer. 25 parts by weight of a photosensitizer [B] of Formula 8, wherein two of the three D groups are diazonaphthoquinone sulfonic acid groups on average and the remaining one is hydrogen-substituted, 10 parts by weight of a sensitizer [C] of Formula 9, wherein all D groups are hydrogen-substituted, 1 part by weight of the silane coupling agent γ-glycidoxypropyltrimethoxysilane [D] as one of the other additives, and 0.5 parts by weight of BYK-333 [E] as a leveling agent were added. Propylene glycol monomethyl ether acetate [F] was added as a solvent while stirring. The solvent amount was adjusted so that the viscosity of the composition was 10 cPs. After the above components were mixed evenly, the mixture was filtered through a microporous filter with a pore size of 0.1 μm to prepare a positive photoresist composition.

[0196] The specific components and their proportions of the positive photoresist resin compositions in Examples 1-12 and Comparative Examples 1-4 are summarized in Table 1.

[0197] Table 1. Composition of positive photoresist resin compositions in Examples 1-12 and Comparative Examples 1-4

[0198]

[0199] Wherein, [B]: photosensitizer; [C]: sensitizer; [D]: silane coupling agent (γ-glycidoxypropyltrimethoxysilane, product name: XIAMETER™ OFS-6040 Silane, DOW); [E]: leveling agent (product name: BYK-333, BYKCHEMIE (co.k.)); [F]: solvent (propylene glycol monomethyl ether acetate).

[0200] Example 3: Evaluation of Photoresist Performance

[0201] The photoresists formed by curing the positive photoresist resin compositions of Examples 1-12 and Comparative Examples 1-4 were evaluated for the following three performance indicators: heat resistance, hardness, and substrate adhesion. The evaluation results are listed in Table 2.

[0202] Table 2. Results of Photoresist Performance Evaluation

[0203]

[0204] Among them, ◎: excellent, ●: good, ▲X: poor.

[0205] In the heat resistance evaluation, a 10μm CD that can be made into a square hole is considered to have good heat resistance. The square hole of the photoresist with poor heat resistance will become round due to thermal softening; in the hardness evaluation, a hardness of 3H or above is considered good; in the substrate adhesion evaluation, an adhesion of 5B is considered good.

[0206] Figure 4-6 Comparative images of heat resistance, hardness, and adhesion of photoresist Example 1 and photoresist Comparative Example 1 are shown respectively.

[0207] The results in Table 2 show that, compared with Comparative Examples 1-4 which belong to the prior art, the positive photosensitive organic insulating film (photoresist) of the present invention significantly improves heat resistance, has higher hardness and adhesion.

[0208] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Based on the above embodiments, any modifications, equivalent substitutions, or improvements made by those skilled in the art within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An acrylic copolymer resin, characterized in that, The molecular structure is shown below, and it contains the following structural units: acrylic monomer AA containing a phthalimide group as the first structural unit, acrylic monomer AB containing an epoxy group as the second structural unit, and acrylic monomer AC containing a carboxyl group as the third structural unit: Where X represents the side chain structures of AA1 and AA2 in the first structural unit; Y represents the side chain structures of AB1-AB6 in the second structural unit; and Z represents methyl or hydrogen. The first structural unit AA is selected from the molecular structural formula AA1 or AA2 represented by the following chemical formula 1: [Chemical Formula 1] ， The substituent R1 in AA1 and AA2 can be any one of the following structural formulas: ， Substituent R2 is a group consisting of an aliphatic chain comprising one or more carbon atoms (C) and one or more oxygen atoms (O), wherein the aliphatic chain is selected from methyl, ethyl, propyl, butyl, pentyl, hexyl, and cyclohexyl. The substituents R3, R4, R5, R6, and R7 in AA2 are each independently selected from the following molecular structural formulas: The second structural unit AB is selected from one of the molecular structural formulas AB1 to AB6 represented by the following chemical formula 6: [Chemical Formula 6] , The third structural unit AC is selected from either the molecular structural formula AC1 or AC2 represented by chemical formula 7: [Chemical Formula 7] 。 2. The acrylic copolymer resin according to claim 1, characterized in that, The first structural unit AA1 is selected from one of the molecular structural formulas AA1-1 to AA1-72; the first structural unit AA2 is selected from one of the molecular structural formulas AA2-1 to AA2-72.

3. The acrylic copolymer resin according to claim 1 or 2, characterized in that, The monomer AA represented by chemical formula 1 has a weight fraction of 5%-50%; the monomer AB represented by chemical formula 6 has a weight fraction of 5%-80%; and the monomer AC represented by chemical formula 7 has a weight fraction of 5%-50%.

4. A method for preparing an acrylic copolymer resin as described in any one of claims 1-3, characterized in that, The process includes the following steps: placing monomers AA, AB, and AC, an initiator azo compound, and solvent PGMEA in a reaction vessel, purging with nitrogen for protection, heating to 60-75°C, stirring to react, and obtaining a resin solution.

5. A positive photosensitive organic insulating film composition, i.e., a positive photoresist composition, characterized in that, It includes the acrylic copolymer resin as described in any one of claims 1-3, the diazonaphthoquinone photosensitizer, the sensitizer, the silane coupling agent, the leveling agent, and the organic solvent.

6. The positive photosensitive organic insulating film composition as described in claim 5, characterized in that, The diazonoquinone photosensitizer is selected from one or a mixture of two or more compounds shown in Formulas 8-1 to 8-5 of the following group: Formula 8-1 Formula 8-2 Formula 8-3 Equation 8-4, Equation 8-5, In this configuration, the substituents D may be the same or different, and each is independently selected from hydrogen atoms, groups shown in Formula 8-6 or Formula 8-7, and at least one D is not a hydrogen atom. Formula 8-6 Formula 8-7.

7. The positive photosensitive organic insulating film composition as described in claim 5, characterized in that, The sensitizer is selected from one or a mixture of two or more compounds shown in Formulas 9-1 to 9-5 of the following group: Equation 9-1 Equation 9-2 Equation 9-3 Equation 9-4 Equation 9-5.

8. The positive photosensitive organic insulating film composition as described in claim 5, characterized in that, The silane coupling is selected from one or more members of the group below: trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetylsilane, vinyltrimethoxysilane, γ-isocyanate propyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, and 2-(3',4'-epoxycyclohexyl)ethyltrimethoxysilane; The leveling agent is selected from one or more members of the following group: BYK-333 (manufactured by BYKCHEMIE Co., Ltd.), R-08 (manufactured by DIC Corporation), R-475 (manufactured by DIC Corporation), R-30 (manufactured by DIC Corporation), BM-1000 (manufactured by BMCHEMIE Corporation), BM-1100 (manufactured by BMCHEMIE Corporation), FLUORADE FC-135 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-170C (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-430 (manufactured by Sumitomo 3M Co., Ltd.), FLUORADE FC-431 (manufactured by Sumitomo 3M Co., Ltd.), SAFLON S-112 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-113 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-131 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-141 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-145 (manufactured by Asahi Glass Co., Ltd.), SAFLON S-382 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-101 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-102 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-103 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-104 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-105 (manufactured by Asahi Glass Co., Ltd.), SAFLON SC-106 (manufactured by Asahi Glass Co., Ltd.), SH-28PA (manufactured by Toray Silicone Co., Ltd.), SH-190 (manufactured by Toray Silicone Co., Ltd.), SH-193 (manufactured by Toray Silicone Co., Ltd.), SZ-6032 (manufactured by Toray Silicone Co., Ltd.), SF-8428 (manufactured by Toray Silicone Co., Ltd.), DC-57 (manufactured by Toray Silicone Co., Ltd.), DC190 (manufactured by Toray Silicone Co., Ltd.); and / or The organic solvent is selected from one or more members of the group below: propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and methyl methoxypropionate.

9. The use of the positive photosensitive organic insulating film composition, i.e., the positive photoresist composition, as described in any one of claims 5-8, in the preparation of the following electronic devices: thin film transistors in liquid crystal displays, surface passivation protective layers in integrated circuit manufacturing and packaging, and interlayer insulating layers in multilayer metal interconnect circuits.

10. An electronic device, characterized in that, The substrate surface of the electronic device includes an organic insulating film cured from the positive photosensitive organic insulating film composition as described in any one of claims 6-8.

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