Insulating film surface voltage estimation method and device, electronic equipment and storage medium

Abstract

The embodiment of the invention relates to the field of insulating materials, in particular to an insulating film surface voltage estimation method and device, electronic equipment and a storage medium, a plurality of partial discharge parameters are determined according to an application scene of a target insulating film, and the partial discharge parameters comprise a creepage distance, a tangential electric field peak value and a feature position. And determining the initial field intensity of partial discharge on the surface of the target insulating film according to the creepage distance and the feature position. And according to the tangential electric field peak value, the initial field intensity and the applied voltage for generating partial discharge, determining the initial voltage of partial discharge on the surface of the target insulating film. According to the embodiment of the invention, the process period of estimating the initial voltage is short, the calculation is simple, the calculation amount is small, the efficiency of the initial voltage estimation process is improved, and the precision of an estimation result is ensured through accurate calculation.

Description

Technical Field

[0001] This application relates to the field of insulating materials, and includes, but is not limited to, a method and apparatus for estimating the surface voltage of an insulating film, an electronic device, and a storage medium. Background Technology

[0002] During operation, electrical equipment, including its insulating materials, is subjected to multiple stresses, including electrical, thermal, mechanical, and environmental stresses, leading to gradual performance degradation and ultimately affecting the reliability of the equipment. Surface partial discharge (PD) is one of the main factors causing insulation material aging, and accurately estimating the PD initiation voltage (PDIV) is crucial for assessing the reliability of insulation systems. However, current technologies typically employ experimental testing to directly detect partial discharge signals on the insulating material surface to determine the initiation voltage. This method is costly, time-consuming, and inefficient. Summary of the Invention

[0003] In view of this, the method, apparatus, electronic device and storage medium for estimating the surface voltage of insulating films provided in the embodiments of this application improve the efficiency and cost of detecting the partial discharge initiation voltage on the surface of insulating films, and ensure the accuracy of the detection results.

[0004] The insulating film surface voltage estimation method, apparatus, electronic device, and storage medium provided in this application are implemented as follows: One aspect of this application provides a method for estimating the surface voltage of an insulating film, the method comprising: Several partial discharge parameters are determined based on the application scenario of the target insulating film. These partial discharge parameters include creepage distance, peak tangential electric field, and characteristic location. The initial field strength of partial discharge on the surface of the target insulating film is determined based on the creepage distance and characteristic location; The initiation voltage of partial discharge on the surface of the target insulating film is determined based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate partial discharge.

[0005] In one possible implementation, multiple partial discharge parameters are determined based on the application scenario of the target insulating film, including: A physical simulation model is obtained by performing a physical simulation model based on the application scenario of the target insulating film. The physical simulation model includes the target insulating film and high-voltage electrodes and grounding electrodes arranged opposite to each other on both sides of the target insulating film. Multiple partial discharge parameters of the target insulating film were determined based on a physical simulation model.

[0006] In one possible implementation, multiple partial discharge parameters of the target insulating film are determined based on a physical simulation model, including: The creepage distance is determined as the side length of the target insulating film surface in the physical simulation model.

[0007] In one possible implementation, multiple partial discharge parameters of the target insulating film are determined based on a physical simulation model, including: A voltage is applied to the surface of the target insulating film based on a high-voltage electrode and a grounding electrode; The tangential electric field distribution curve on the surface of the target insulating film under the condition of the applied voltage; The peak value of the tangential electric field is determined based on the extreme values ​​of the tangential electric field distribution.

[0008] In one possible implementation, multiple partial discharge parameters of the target insulating film are determined based on a physical simulation model, including: The target electric field peak value is obtained by multiplying the peak value of the tangential electric field with the preset value. The two positions corresponding to the peak value of the target electric field in the tangent electric field curve are identified as characteristic positions.

[0009] In one possible implementation, the initial field strength of the partial discharge on the surface of the target insulating film is determined based on the creepage distance and characteristic location, including: According to the formula Calculate the initial field strength of partial discharge on the surface of the target insulating film, where p is the atmospheric pressure of the application scenario of the target insulating film. l represents the creepage distance, and l2 and l1 are characteristic locations.

[0010] In one possible implementation, the initiation voltage of the partial discharge on the surface of the target insulating film is determined based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge, including: According to the formula Calculate the initiation voltage of partial discharge on the surface of the target insulating film, where V s To apply voltage, E ps =0.95E max E max E is the peak value of the tangential electric field. s This represents the initial field strength.

[0011] Another aspect of the embodiments of this application provides an insulating film surface voltage estimation device, the device comprising: The parameter acquisition module is used to determine multiple partial discharge parameters based on the application scenario of the target insulating film. The partial discharge parameters include creepage distance, peak value of tangential electric field, and characteristic location. The field strength calculation module is used to determine the initial field strength of partial discharge on the surface of the target insulating film based on the creepage distance and characteristic location. The voltage calculation module is used to determine the initiation voltage of partial discharge on the surface of the target insulating film based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate partial discharge.

[0012] In one possible implementation, the parameter acquisition module is further used for: A physical simulation model is obtained by performing a physical simulation model based on the application scenario of the target insulating film. The physical simulation model includes the target insulating film and high-voltage electrodes and grounding electrodes arranged opposite to each other on both sides of the target insulating film. Multiple partial discharge parameters of the target insulating film were determined based on a physical simulation model.

[0013] In one possible implementation, the parameter acquisition module is further used for: The creepage distance is determined as the side length of the target insulating film surface in the physical simulation model.

[0014] In one possible implementation, the parameter acquisition module is further used for: A voltage is applied to the surface of the target insulating film based on a high-voltage electrode and a grounding electrode; The tangential electric field distribution curve on the surface of the target insulating film under the condition of the applied voltage; The peak value of the tangential electric field is determined based on the extreme values ​​of the tangential electric field distribution.

[0015] In one possible implementation, the parameter acquisition module is further used for: The target electric field peak value is obtained by multiplying the peak value of the tangential electric field with the preset value. The two positions corresponding to the peak value of the target electric field in the tangent electric field curve are identified as characteristic positions.

[0016] In one possible implementation, the field strength calculation module is further used for: According to the formula Calculate the initial field strength of partial discharge on the surface of the target insulating film, where p is the atmospheric pressure of the application scenario of the target insulating film. l represents the creepage distance, and l2 and l1 are characteristic locations.

[0017] In one possible implementation, the voltage calculation module is further used for: According to the formula Calculate the initiation voltage of partial discharge on the surface of the target insulating film, where V s To apply voltage, E ps =0.95E max E max E is the peak value of the tangential electric field. s This represents the initial field strength.

[0018] The electronic device provided in this application includes a memory and a processor. The memory stores a computer program that can run on the processor. When the processor executes the program, it implements the method described in this application.

[0019] The computer-readable storage medium provided in this application embodiment stores a computer program thereon, which, when executed by a processor, implements the method provided in this application embodiment.

[0020] In this embodiment, multiple partial discharge parameters are determined based on the application scenario of the target insulating film. These parameters include creepage distance, peak tangential electric field, and characteristic location. The initial field strength of the partial discharge on the surface of the target insulating film is determined based on the creepage distance and characteristic location. The initial voltage of the partial discharge on the surface of the target insulating film is determined based on the peak tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge. This embodiment of the application features a short estimation process for the initial voltage, simple calculations, and low computational load, improving the efficiency of the initial voltage estimation process. Simultaneously, precise calculations ensure the accuracy of the estimation results. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A flowchart illustrating a method for estimating the surface voltage of an insulating film according to an embodiment of this application is shown. Figure 2 A schematic diagram of an electric field simulation model according to an embodiment of this application is shown; Figure 3 A schematic diagram showing the tangential electric field distribution according to an embodiment of this application is provided. Figure 4 A schematic diagram of an insulating film surface voltage estimation device according to an embodiment of this application is shown; Figure 5 A schematic diagram of an electronic device according to an embodiment of this application is shown. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the specific technical solutions of this application will be further described in detail below with reference to the accompanying drawings of the embodiments of this application. The following embodiments are used to illustrate this application, but are not intended to limit the scope of this application.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0025] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0026] It should be noted that the terms "first, second, third" used in the embodiments of this application are used to distinguish similar or different objects and do not represent a specific order of objects. It can be understood that "first, second, third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein.

[0027] The method for estimating the surface voltage of the insulating film according to the embodiments of this application can be executed by any electronic device, including but not limited to mobile phones, wearable devices (such as smartwatches, smart bracelets, smart glasses, etc.), tablet computers, laptops, vehicle terminals, PCs (Personal Computers), etc. The function implemented by this method can be implemented by a processor in the electronic device calling program code. Of course, the program code can be stored in a computer storage medium. It can be seen that the electronic device includes at least a processor and a storage medium.

[0028] The surface voltage estimation method for insulating films according to the embodiments of this application can be used in application scenarios for estimating the initial voltage of any type of insulating material. For example, the embodiments of this application can be applied to the application scenario of estimating the initial voltage of Nomex insulating films made of aramid fiber paper. Alternatively, it can also be applied to the application scenario of estimating the initial voltage of single or composite insulating films such as polyester films, polyimide films, and polyester film-polyester fiber paper composite materials.

[0029] The relevant technologies mainly rely on experimental testing methods to determine the initiation voltage on the surface of the insulating film. In layman's terms, this involves gradually applying voltage to the insulating sample in the laboratory until a partial discharge signal is detected to determine the initiation voltage. This method obviously suffers from drawbacks such as high cost, long cycle time, and low efficiency.

[0030] Therefore, the technical problem solved by the embodiments of this application is how to reduce detection costs, shorten the detection cycle, and improve detection efficiency while ensuring the accuracy of the initial voltage detection results on the surface of the insulating film.

[0031] The following describes in detail the surface voltage estimation scheme for insulating films according to embodiments of this application, with reference to the accompanying drawings.

[0032] Figure 1 A flowchart illustrating a method for estimating the surface voltage of an insulating film according to an embodiment of this application is shown. Figure 1 As shown, the method for estimating the surface voltage of the insulating film in this application embodiment may include the following steps S10-S20.

[0033] For ease of description, the method for estimating the surface voltage of the insulating film in this application is described using an electronic device as the executing entity. It should be understood that the executing entity in this application embodiment can also be a processor or chip in an electronic device, and this application embodiment does not impose any limitations.

[0034] Step S10: Determine multiple partial discharge parameters based on the application scenario of the target insulating film.

[0035] In one possible implementation, when an electronic device needs to determine the partial discharge initiation voltage on the surface of a target insulating film, it first determines multiple partial discharge parameters of the target insulating film in its application scenario. The application scenario of the target insulating film can include applications in generators, transformers, and reactors, etc. After determining the application scenario of the target insulating film, the electronic device can extract the partial discharge parameters required to determine the initiation voltage based on the characteristics of the application scenario, the inherent material properties of the target insulating film, and the electric field distribution characteristics.

[0036] In some embodiments, the partial discharge parameters required for the electronic device to calculate the partial discharge initiation voltage on the surface of the target insulating film are multiple parameters that are directly or indirectly used to calculate the initiation voltage, which may include creepage distance, peak tangential electric field, and characteristic location. Optionally, the partial discharge parameters may also include atmospheric pressure, which can be determined according to the application scenario.

[0037] Optionally, the method for determining the aforementioned multiple partial discharge parameters in this application embodiment may include first obtaining the parameters of the dual-electrode structure in the application scenario of the target insulating film, including but not limited to the geometry and size of the high-voltage electrode, the geometry and size of the grounding electrode, and the thickness and dielectric constant of the target insulating film sandwiched between them. After obtaining the above information, an electric field simulation is performed based on the above parameters, and multiple partial discharge parameters are determined based on the simulation results. The electric field simulation can be performed by directly building a model simulating the application scenario in the laboratory, or by using simulation modeling software to perform physical simulation modeling to obtain a physical simulation model for electric field simulation.

[0038] Figure 2 A schematic diagram of an electric field simulation model according to an embodiment of this application is shown. Figure 2As shown, the electric field simulation model can be a model built directly in the laboratory to simulate the application scenario, or it can be a physical simulation model obtained by using simulation modeling software. In this embodiment of the application, when simulating the electric field by establishing a physical simulation model, the physical simulation model includes a target insulating film, and a high-voltage electrode and a grounding electrode arranged opposite each other on both sides of the target insulating film. The geometry and size of the high-voltage electrode, the geometry and size of the grounding electrode, and the thickness and dielectric constant of the target insulating film sandwiched between them can be predetermined according to the application scenario.

[0039] Optionally, in embodiments of this application, after simulating the application scenario by constructing a physical model architecture or physical simulation model, multiple partial discharge parameters of the target insulating film can be determined directly or indirectly based on the physical simulation model. Among these, the partial discharge parameters that the electronic device can directly determine after simulating the application scenario may include determining the creepage distance; for example, the electronic device can directly determine the side length of the target insulating film surface in the physical simulation model or physical model architecture as the creepage distance *l*. Alternatively, the electronic device can also simultaneously determine the atmospheric pressure *p* under the application scenario.

[0040] In other embodiments, after performing application scenario simulation, the electronic device can also use the finite element method to simulate the electric field, obtaining the tangential electric field distribution curve on the surface of the target insulating film, and further calculate other partial discharge parameters based on the tangential electric field distribution curve. Specifically, after simulating the electric field using the finite element method, the model can be based on applying a voltage to the surface of the target insulating film using a high-voltage electrode and a ground electrode. The electronic device can obtain the tangential electric field distribution curve on the surface of the target insulating film under the applied voltage condition. Then, the peak value E of the tangential electric field is determined based on the extreme values ​​of the tangential electric field distribution. max Furthermore, the target electric field peak value ωE can also be obtained by multiplying the peak value of the tangential electric field with a preset value ω. max And determine the peak value ωE of the target electric field in the tangential electric field curve. max The two corresponding positions are feature positions l1 and l2.

[0041] Figure 3 A schematic diagram showing the tangential electric field distribution according to an embodiment of this application is provided. Figure 3 As shown, the electronic device's electric field is simulated using the finite element method. The horizontal axis of the tangential electric field distribution curve represents the location, and the vertical axis represents the tangential field strength. Therefore, the maximum value of the tangential electric field distribution can be directly determined for the electronic device as the peak tangential electric field E. max With a preset value of 0.95, the target electric field peak value is 0.95E. max The electronic equipment determines the vertical axis to be 0.95E. max The two positions are feature positions l1 and l2, respectively.

[0042] Step S20: Determine the initial field strength of the partial discharge on the surface of the target insulating film based on the creepage distance and the characteristic location.

[0043] In one possible implementation, after determining multiple partial discharge parameters corresponding to the target insulating film, including creepage distance, peak tangential electric field, and characteristic location, the electronic device can determine the initial field strength of the partial discharge on the surface of the target insulating film based on the creepage distance and characteristic location.

[0044] Optionally, the electronic device can determine the initial field strength of partial discharge on the surface of the target insulating film based on the creepage distance and characteristic location using the formula... Calculate the initial field strength of partial discharge on the surface of the target insulating film, where p is the atmospheric pressure of the application scenario of the target insulating film. is the scaling factor of the electric field distribution, l is the creepage distance, and l2 and l1 are characteristic locations.

[0045] The above method for calculating the initial field strength reflects the impact of the environment on the discharge of the application scenario through atmospheric pressure p. The method integrates the field strength distribution with the surface characteristics of the material to ensure that the calculation results are compatible with the dielectric properties of the target insulating film.

[0046] Step S30: Determine the initiation voltage of the partial discharge on the surface of the target insulating film based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge.

[0047] In one possible implementation, after determining multiple partial discharge parameters corresponding to the target insulating film, including creepage distance, peak tangential electric field, and characteristic location, and determining the initial field strength of the partial discharge on the surface of the target insulating film based on the creepage distance and characteristic location, the electronic device can determine the initiation voltage of the partial discharge on the surface of the target insulating film based on the peak tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge.

[0048] Alternatively, the starting voltage can be estimated using a proportional relationship, i.e., according to the formula... Calculate the initiation voltage of partial discharge on the surface of the target insulating film, where V s To apply voltage, E ps =0.95E max E max E is the peak value of the tangential electric field. s This represents the initial field strength.

[0049] Furthermore, to avoid abrupt changes in calculation results from a single experiment, this embodiment of the application can perform multiple electric field simulations using the above method, and calculate the corresponding initiation voltage based on the partial discharge parameters collected after each electric field simulation. Finally, the average value of each initiation voltage is calculated to obtain the detection result.

[0050] Based on the above technical features, the embodiments of this application detect the initiation voltage of partial discharge of the target insulating film through parameter calculation, which is simple and fast. This greatly improves the efficiency of obtaining the initiation voltage while maintaining accuracy, and solves the problems of long cycle, high cost and time-consuming and labor-intensive acquisition of the initiation voltage in the prior art.

[0051] It should be understood that although the steps in the above flowcharts are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the above flowcharts may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the sub-steps or stages of other steps.

[0052] Based on the foregoing embodiments, this application provides an insulating film surface voltage estimation device. The device includes various modules and units included in each module, which can be implemented by a processor; of course, it can also be implemented by specific logic circuits. In the implementation process, the processor can be a central processing unit (CPU), microprocessor (MPU), digital signal processor (DSP), or field programmable gate array (FPGA), etc.

[0053] Figure 4 A schematic diagram of an insulating film surface voltage estimation device according to an embodiment of this application is shown. Figure 4 As shown, the insulating film surface voltage estimation device in this application includes: The parameter acquisition module 40 is used to determine multiple partial discharge parameters according to the application scenario of the target insulating film. The partial discharge parameters include creepage distance, peak value of tangential electric field and characteristic location. Field strength calculation module 41 is used to determine the initial field strength of partial discharge on the surface of the target insulating film based on the creepage distance and characteristic location; The voltage calculation module 42 is used to determine the starting voltage of partial discharge on the surface of the target insulating film based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate partial discharge.

[0054] In one possible implementation, the parameter acquisition module 40 is further used for: A physical simulation model is obtained by performing a physical simulation model based on the application scenario of the target insulating film. The physical simulation model includes the target insulating film and high-voltage electrodes and grounding electrodes arranged opposite to each other on both sides of the target insulating film. Multiple partial discharge parameters of the target insulating film were determined based on a physical simulation model.

[0055] In one possible implementation, the parameter acquisition module 40 is further used for: The creepage distance is determined as the side length of the target insulating film surface in the physical simulation model.

[0056] In one possible implementation, the parameter acquisition module 40 is further used for: A voltage is applied to the surface of the target insulating film based on a high-voltage electrode and a grounding electrode; The tangential electric field distribution curve on the surface of the target insulating film under the condition of the applied voltage; The peak value of the tangential electric field is determined based on the extreme values ​​of the tangential electric field distribution.

[0057] In one possible implementation, the parameter acquisition module 40 is further used for: The target electric field peak value is obtained by multiplying the peak value of the tangential electric field with the preset value. The two positions corresponding to the peak value of the target electric field in the tangent electric field curve are identified as characteristic positions.

[0058] In one possible implementation, the field strength calculation module 41 is further used for: According to the formula Calculate the initial field strength of partial discharge on the surface of the target insulating film, where p is the atmospheric pressure of the application scenario of the target insulating film. l represents the creepage distance, and l2 and l1 are characteristic locations.

[0059] In one possible implementation, the voltage calculation module 42 is further used for: According to the formula Calculate the initiation voltage of partial discharge on the surface of the target insulating film, where V s To apply voltage, E ps =0.95E max E max E is the peak value of the tangential electric field. s This represents the initial field strength.

[0060] The descriptions of the above device embodiments are similar to those of the above method embodiments, and have similar beneficial effects. For technical details not disclosed in the device embodiments of this application, please refer to the descriptions of the method embodiments of this application for understanding.

[0061] It should be noted that, in the embodiments of this application... Figure 4 The module division of the insulating film surface voltage estimation device shown is illustrative and represents only one logical functional division; in actual implementation, other division methods may be used. Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, exist as separate physical units, or be integrated into one unit by two or more units. The integrated units described above can be implemented in hardware, as software functional units, or in a combination of both.

[0062] It should be noted that, in the embodiments of this application, if the above-described methods are implemented as software functional modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this application, or the parts that contribute to related technologies, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause an electronic device to execute all or part of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), magnetic disks, or optical disks. Thus, the embodiments of this application are not limited to any specific hardware and software combination.

[0063] Figure 5 A schematic diagram of an electronic device according to an embodiment of this application is shown. For example... Figure 5 As shown in the figure, this application provides an electronic device, which can be a server, and its internal structure diagram can be as follows. Figure 5 As shown, the electronic device includes a processor 520, a memory, and a transceiver 540 connected via a system bus 510. The processor 520 provides computing and control capabilities. The memory includes a non-volatile storage medium 531 and internal memory 532. The non-volatile storage medium 531 stores an operating system, computer programs, and a database. The internal memory 532 provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium 531. The database stores data. The transceiver 540 communicates with external terminals via a network connection. When the computer program is executed by the processor 520, it implements the methods described above.

[0064] This application provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor 520, implements the steps of the method provided in the above embodiments.

[0065] This application provides a computer program product containing instructions that, when run on a computer, cause the computer to perform the steps in the method provided in the above-described method embodiments.

[0066] Those skilled in the art will understand that Figure 5 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the electronic device to which the present application is applied. The specific electronic device may include more or fewer components than shown in the figure, or combine certain components, or have different component arrangements.

[0067] In one possible implementation, the shooting prompting device provided in this application can be implemented as a computer program, which can be configured as follows: Figure 5 The device operates on the electronic device shown. The memory of the electronic device can store various program modules that make up the above-described apparatus. The computer program composed of the various program modules causes the processor 520 to execute the steps of the methods in the various embodiments of this application described in this specification.

[0068] It should be noted that the descriptions of the storage medium and device embodiments above are similar to the descriptions of the method embodiments above, and have similar beneficial effects. For technical details not disclosed in the storage medium, storage medium, and device embodiments of this application, please refer to the descriptions of the method embodiments of this application for understanding.

[0069] It should be understood that the phrases "one embodiment," "an embodiment," or "some embodiments" mentioned throughout the specification mean that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this application. Therefore, phrases such as "in one possible implementation," "in one embodiment," or "in some embodiments" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this application, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application. The sequence numbers of the above-described embodiments are merely for descriptive purposes and do not represent the superiority or inferiority of the embodiments. The descriptions of the various embodiments above tend to emphasize the differences between the various embodiments; their similarities or commonalities can be referred to mutually, and for the sake of brevity, they will not be repeated here.

[0070] In this article, the term "and / or" is merely a description of the relationship between related objects, indicating that there can be three kinds of relationships. For example, object A and / or object B can represent three situations: object A exists alone, object A and object B exist simultaneously, and object B exists alone.

[0071] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0072] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The embodiments described above are merely illustrative. For example, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple modules or components can be combined, or integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the various components shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or modules can be electrical, mechanical, or other forms.

[0073] The modules described above as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules. They may be located in one place or distributed across multiple network units. Some or all of the modules may be selected to achieve the purpose of this embodiment according to actual needs.

[0074] In addition, each functional module in the various embodiments of this application can be integrated into one processing unit, or each module can be a separate unit, or two or more modules can be integrated into one unit; the integrated modules can be implemented in hardware or in the form of hardware plus software functional units.

[0075] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium includes various media that can store program code, such as mobile storage devices, read-only memory (ROM), magnetic disks, or optical disks.

[0076] Alternatively, if the integrated units described above are implemented as software functional modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this application, or the parts that contribute to related technologies, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause an electronic device to execute all or part of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as mobile storage devices, ROMs, magnetic disks, or optical disks.

[0077] The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0078] The features disclosed in the several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0079] The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0080] The above description is merely an embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for estimating the surface voltage of an insulating thin film, characterized in that, The method includes: Multiple partial discharge parameters are determined based on the application scenario of the target insulating film. These partial discharge parameters include creepage distance, peak tangential electric field, and characteristic location. The initial field strength of the partial discharge on the surface of the target insulating film is determined based on the creepage distance and the characteristic location. The initiation voltage of the partial discharge on the surface of the target insulating film is determined based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge.

2. The method according to claim 1, characterized in that, The determination of multiple partial discharge parameters based on the application scenario of the target insulating film includes: A physical simulation model is obtained by performing a physical simulation model based on the application scenario of the target insulating film. The physical simulation model includes the target insulating film, as well as a high-voltage electrode and a grounding electrode arranged opposite to each other on both sides of the target insulating film. Based on the physical simulation model, several partial discharge parameters of the target insulating film are determined.

3. The method according to claim 2, characterized in that, The determination of multiple partial discharge parameters of the target insulating film based on the physical simulation model includes: The edge length of the target insulating film surface in the physical simulation model is determined as the creepage distance.

4. The method according to claim 2, characterized in that, The determination of multiple partial discharge parameters of the target insulating film based on the physical simulation model includes: A voltage is applied to the surface of the target insulating film based on the high-voltage electrode and the grounding electrode; The tangential electric field distribution curve on the surface of the target insulating film under the condition of the applied voltage; The peak value of the tangential electric field is determined based on the extreme values ​​of the tangential electric field distribution.

5. The method according to claim 4, characterized in that, The determination of multiple partial discharge parameters of the target insulating film based on the physical simulation model includes: The target electric field peak value is obtained by multiplying the peak value of the tangential electric field with a preset value. The two positions corresponding to the peak value of the target electric field in the tangential electric field curve are identified as characteristic positions.

6. The method according to claim 1, characterized in that, Determining the initial field strength of partial discharge on the surface of the target insulating film based on the creepage distance and the characteristic location includes: According to the formula Calculate the initial field strength of partial discharge on the surface of the target insulating film, where p is the atmospheric pressure of the application scenario of the target insulating film. l represents the creepage distance, and l2 and l1 are characteristic positions, respectively.

7. The method according to claim 1, characterized in that, Determining the initiation voltage of the partial discharge on the surface of the target insulating film based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge includes: According to the formula Calculate the initiation voltage of partial discharge on the surface of the target insulating film, where V s For the applied voltage, E ps =0.95E max E max E is the peak value of the tangential electric field. s The initial field strength is given.

8. A device for estimating the surface voltage of an insulating film, characterized in that, The device includes: The parameter acquisition module is used to determine multiple partial discharge parameters based on the application scenario of the target insulating film. The partial discharge parameters include creepage distance, peak value of tangential electric field, and characteristic location. The field strength calculation module is used to determine the initial field strength of partial discharge on the surface of the target insulating film based on the creepage distance and the characteristic location. The voltage calculation module is used to determine the initiation voltage of the partial discharge on the surface of the target insulating film based on the peak value of the tangential electric field, the initial field strength, and the applied voltage used to generate the partial discharge.

9. An electronic device comprising a memory and a processor, the memory storing a computer program executable on the processor, characterized in that, When the processor executes the program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the method as described in any one of claims 1 to 7.

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