Passive refrigeration layer and product using same
By constructing a one-dimensional aperiodic photonic crystal structure using non-periodic stacked A, B, and C oxide layers, the problem of efficient heat dissipation of radiation-cooled materials on transparent surfaces was solved, enabling spontaneous cooling and improved imaging clarity in high-precision optical equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-01-15
- Publication Date
- 2026-03-17
AI Technical Summary
Existing technologies struggle to achieve efficient infrared radiation heat dissipation while maintaining high visible light transmittance, preventing radiation cooling materials from being applied to precision optical window scenarios with transparent or highly reflective surfaces.
A one-dimensional aperiodic photonic crystal structure is constructed by using three oxide layers, A, B, and C, stacked aperiodically. By matching the refractive index difference with the optical thickness, multiple interference and resonance effects are achieved in a wide spectral range from 0.3μm to 25μm, ensuring high transmission in the visible light band from 0.4μm to 0.7μm, high reflectivity in the ultraviolet band from 0.3μm to 0.4μm and the near-infrared band from 0.7μm to 2.5μm, and efficient radiative heat dissipation in the mid-far-infrared band from 2.5μm to 25μm.
Without relying on external energy input, it achieves spectral selective modulation and spontaneous cooling, maintains high transmittance in the visible light band to ensure imaging clarity, and efficiently reflects near-infrared radiation from the solar spectrum to suppress heat accumulation in the equipment, while maintaining high emissivity in the mid- and far-infrared bands.
Smart Images
Figure CN121677201A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of refrigeration technology, and in particular to a passive refrigeration layer and products using the passive refrigeration layer. Background Technology
[0002] Radiation cooling, a passive zero-energy cooling technology, dissipates heat from an object into outer space through atmospheric windows ranging from 8μm to 13μm in the form of infrared radiation. However, due to the difficulty of achieving efficient infrared radiation heat dissipation while maintaining high visible light transmittance, current technologies can only be applied to opaque or highly reflective surfaces such as textiles and buildings, and cannot be used in precision optical window scenarios such as camera lenses. Summary of the Invention
[0003] Therefore, it is necessary to provide a passive cooling layer and a product using the passive cooling layer to address the above problems. The passive cooling layer has high visible light transmittance, high reflectivity and high emissivity.
[0004] A passive cooling layer includes an A layer, a B layer, and a C layer stacked non-periodically, wherein the A layer is selected from an oxide layer with a refractive index of n1, 1.4≤n1≤1.43, the B layer is selected from an oxide layer with a refractive index of n2, 1.6≤n2≤1.9, and the C layer is selected from an oxide layer with a refractive index of n3, 2.1≤n3≤2.15, and the total number of the A layer, the B layer, and the C layer is greater than or equal to 90 layers.
[0005] In one embodiment, the total number of layers A, B, and C is 94 to 98.
[0006] In one embodiment, the total number of layers A is greater than or equal to 25.
[0007] And / or, the total number of layers in layer B is greater than or equal to 25;
[0008] And / or, the total number of layers in layer C is greater than or equal to 35;
[0009] And / or, the total number of layers in layer A, layer B, and layer C is less than or equal to 50% of the total number of passive cooling layers.
[0010] In one embodiment, the thickness of a single layer of layer A, layer B, and layer C is less than or equal to 1000 nm.
[0011] And / or, the thickness of a single layer of layer A, layer B and layer C is greater than or equal to 5 nm.
[0012] In one embodiment, the thickness of the passive cooling layer is greater than or equal to 10 μm.
[0013] In one embodiment, the total number of layers A, B, and C is 96.
[0014] In one embodiment, the passive cooling layer comprises: a first layer A with a thickness of 190 nm to 193 nm; a second layer B with a thickness of 27 nm to 30 nm; a third layer A with a thickness of 58 nm to 60 nm; a fourth layer C with a thickness of 5 nm to 6 nm; a fifth layer A with a thickness of 824 nm to 827 nm; a sixth layer B with a thickness of 49 nm to 51 nm; a seventh layer A with a thickness of 16 nm to 18 nm; an eighth layer C with a thickness of 118 nm to 120 nm; a ninth layer A with a thickness of 171 nm to 173 nm; a tenth layer C with a thickness of 100 nm to 102 nm; and an eleventh layer B with a thickness of 15 nm to 17 nm. The 12th layer is layer C, with a thickness of 10nm to 12nm; the 13th layer is layer A, with a thickness of 344nm to 346nm; the 14th layer is layer C, with a thickness of 26nm to 27nm; the 15th layer is layer B, with a thickness of 33nm to 35nm; the 16th layer is layer C, with a thickness of 31nm to 34nm; the 17th layer is layer A, with a thickness of 164nm to 166nm; the 18th layer is layer C, with a thickness of 100nm to 104nm; the 19th layer is layer A, with a thickness of 159nm to 162nm; the 20th layer is layer C, with a thickness of 107nm to 109nm; the 21st layer is layer A, with a thickness of 173nm to 175nm; the 22nd layer is layer C, with a thickness of 110nm to 112nm; Layer 23 is layer A, with a thickness of 172nm to 174nm; layer 24 is layer C, with a thickness of 104nm to 106nm; layer 25 is layer A, with a thickness of 157nm to 159nm; layer 26 is layer C, with a thickness of 105nm to 107nm; layer 27 is layer A, with a thickness of 199nm to 201nm; layer 28 is layer B, with a thickness of 105nm to 107nm; layer 29 is layer C, with a thickness of 119nm to 121nm; layer 30 is layer A, with a thickness of 178nm to 180nm; layer 31 is layer C, with a thickness of 217nm to 219nm; layer 32 is layer A, with a thickness of 175nm to 177nm; layer 33 is layer C, with a thickness of 115nm to 1... 17nm; Layer 34 is Layer A, with a thickness of 328nm to 332nm; Layer 35 is Layer C, with a thickness of 115nm to 117nm; Layer 36 is Layer A, with a thickness of 327nm to 329nm; Layer 37 is Layer C, with a thickness of 12nm to 14nm; Layer 38 is Layer B, with a thickness of 12nm to 13nm; Layer 39 is Layer C, with a thickness of 95nm to 97nm; Layer 40 is Layer A, with a thickness of 182nm to 184nm; Layer 41 is Layer B, with a thickness of 52nm to 54nm; Layer 42 is Layer A, with a thickness of 114nm to 116nm; Layer 43 is Layer B, with a thickness of 64nm to 66nm; Layer 44 is Layer C, with a thickness of 153nm to 155nm;Layer 45 is layer B, with a thickness of 20nm to 22nm; layer 46 is layer C, with a thickness of 30nm to 32nm; layer 47 is layer A, with a thickness of 188nm to 189nm; layer 48 is layer C, with a thickness of 129nm to 131nm; layer 49 is layer B, with a thickness of 12nm to 14nm; layer 50 is layer C, with a thickness of 99nm to 101nm; layer 51 is layer B, with a thickness of 24nm to 26nm; layer 52 is layer C, with a thickness of 16nm to 18nm; layer 53 is layer A, with a thickness of 316nm to 319nm; layer 54 is layer B, with a thickness of 43nm to 46nm; layer 55 is layer C, with a thickness of 95nm to 97nm; layer 56 is layer B, with a thickness of... The thickness of the first layer is 22nm to 24nm; the 57th layer is a C layer with a thickness of 10nm to 11nm; the 58th layer is an A layer with a thickness of 284nm to 286nm; the 59th layer is a B layer with a thickness of 43nm to 44nm; the 60th layer is a C layer with a thickness of 105nm to 107nm; the 61st layer is a B layer with a thickness of 65nm to 67nm; the 62nd layer is an A layer with a thickness of 241nm to 243nm; the 63rd layer is a B layer with a thickness of 57nm to 59nm; the 64th layer is a C layer with a thickness of 229nm to 231nm; the 65th layer is a B layer with a thickness of 24nm to 25nm; the 66th layer is a C layer with a thickness of 18nm to 20nm; and the 67th layer is an A layer with a thickness of 338nm to 342nm. The thickness of the layers is as follows: Layer 68 is layer C, with a thickness of 15nm to 17nm; Layer 69 is layer B, with a thickness of 21nm to 22nm; Layer 70 is layer C, with a thickness of 116nm to 117nm; Layer 71 is layer B, with a thickness of 6nm to 8nm; Layer 72 is layer C, with a thickness of 99nm to 101nm; Layer 73 is layer C, with a thickness of 5nm to 7nm; Layer 74 is layer B, with a thickness of 17nm to 19nm; Layer 75 is layer C, with a thickness of 11nm to 12nm; Layer 76 is layer B, with a thickness of 34nm to 36nm; Layer 77 is layer A, with a thickness of 263nm to 265nm; Layer 78 is layer B, with a thickness of 65nm to 67nm; Layer 79 is layer C, with a thickness of 12nm to 12nm. The thickness ranges from 9nm to 131nm; the 80th layer is a B layer with a thickness of 10nm to 11nm; the 81st layer is a C layer with a thickness of 101nm to 103nm; the 82nd layer is a B layer with a thickness of 20nm to 22nm; the 83rd layer is a C layer with a thickness of 18nm to 20nm; the 84th layer is an A layer with a thickness of 354nm to 356nm; the 85th layer is a C layer with a thickness of 18nm to 20nm; the 86th layer is a B layer with a thickness of 23nm to 25nm; the 87th layer is a C layer with a thickness of 192nm to 194nm; the 88th layer is a B layer with a thickness of 26nm to 28nm; the 89th layer is a C layer with a thickness of 18nm to 20nm; and the 90th layer is an A layer with a thickness of 377nm to 379nm.Layer 91 is layer C, with a thickness of 16nm to 18nm; layer 92 is layer B, with a thickness of 31nm to 33nm; layer 93 is layer C, with a thickness of 169nm to 171nm; layer 94 is layer B, with a thickness of 9nm to 11nm; layer 95 is layer C, with a thickness of 33nm to 35nm; layer 96 is layer A, with a thickness of 90nm to 92nm.
[0015] In one embodiment, layer A is selected from silicon oxide layer;
[0016] And / or, the B layer is selected from an alumina layer and / or a hafnium oxide layer;
[0017] And / or, the C layer is selected from titanium oxide layers.
[0018] A product that utilizes the passive cooling layer described above.
[0019] In one embodiment, the product is a camera.
[0020] In this invention, a one-dimensional aperiodic photonic crystal structure is constructed by non-periodically stacking three oxide layers with specific refractive indices to more than 90 layers. By utilizing the difference in refractive index between layers and matching the optical thickness, multiple interference and resonance effects are formed in a wide spectral range of 0.3μm to 25μm. This results in high transmission in the visible light band of 0.4μm to 0.7μm, high reflection in the ultraviolet band of 0.3μm to 0.4μm and the near-infrared band of 0.7μm to 2.5μm to block solar thermal radiation, and efficient radiative heat dissipation in the mid-far-infrared band of 2.5μm to 25μm. Ultimately, without relying on external energy input, the integrated function of spectral selective modulation and spontaneous cooling is achieved.
[0021] Therefore, when the passive cooling layer of the present invention is applied to the surface of precision optical windows such as cameras, infrared sensors, and automotive optical systems, it can not only maintain high transmittance in the visible light band, ensuring that the image clarity and color fidelity are not affected, but also efficiently reflect near-infrared radiation from the solar spectrum, suppressing the heat accumulation of the device itself. At the same time, it maintains high emissivity in the mid- and far-infrared bands, achieving spontaneous cooling. This effectively solves the technical contradiction that traditional radiation cooling materials cannot simultaneously achieve transparency and efficient heat dissipation, and promotes the application of radiation cooling technology in high-precision, highly integrated optical devices. Attached Figure Description
[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0023] Figure 1 This is the transmittance spectrum of the passive cooling layer in Embodiment 1 of the present invention;
[0024] Figure 2 This is the absorption spectrum of the passive cooling layer in Embodiment 1 of the present invention;
[0025] Figure 3 This is the transmittance spectrum of the passive cooling layer in Comparative Example 1 of the present invention;
[0026] Figure 4 This is the absorption spectrum of the passive cooling layer in Comparative Example 1 of the present invention;
[0027] Figure 5 This is the transmittance spectrum of the passive cooling layer in Comparative Example 2 of the present invention;
[0028] Figure 6 This is the absorption spectrum of the passive cooling layer in Comparative Example 2 of the present invention;
[0029] Figure 7 This is the transmittance spectrum of the passive cooling layer in Comparative Example 3 of the present invention;
[0030] Figure 8 This is the absorption spectrum of the passive cooling layer in Comparative Example 3 of the present invention. Detailed Implementation
[0031] To facilitate understanding of the present invention, it will be described in more detail below. However, it should be understood that the present invention can be implemented in many different forms and is not limited to the embodiments or examples described herein. Rather, these embodiments or examples are provided to make the disclosure of the present invention more thorough and complete.
[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments or examples only and is not intended to limit the invention. The optional scope of the term "and / or" as used herein includes any one of two or more of the related listed items, as well as any and all combinations of the related listed items, including any two related listed items, any more related listed items, or a combination of all related listed items.
[0033] In this invention, numerical ranges are involved. Unless otherwise specified, the numerical ranges are considered continuous and include the minimum and maximum values of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to integers, it includes every integer between the minimum and maximum values of the range. Additionally, when multiple ranges are provided to describe features or characteristics, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges to which they are included.
[0034] The passive cooling layer provided by this invention includes layers A, B, and C stacked in a non-periodic manner. It is understood that "non-periodic" means that the stacking order and / or thickness of layers A, B, and C do not exhibit a regular repetitive structure. For example, layers A, B, and C are not stacked in a repeating pattern such as A, B, C, A, B, C, or A, C, B, A, C, B, etc. The thicknesses of layers A, B, and C are not all equal, nor do they increase or decrease in a regular manner. Similarly, the thicknesses of all layers A, all layers B, or all layers C are not all equal, nor do they increase or decrease in a regular manner.
[0035] Wherein, layer A is selected from oxide layers with a refractive index of n1, 1.4≤n1≤1.43, layer B is selected from oxide layers with a refractive index of n2, 1.6≤n2≤1.9, layer C is selected from oxide layers with a refractive index of n3, 2.1≤n3≤2.15, and the total number of layers A, B and C is greater than or equal to 90.
[0036] Therefore, by selectively stacking three oxide layers with specific refractive indices aperiodically to more than 90 layers, a one-dimensional aperiodic photonic crystal structure can be constructed. Then, by utilizing the difference in refractive index between layers and matching the optical thickness, multiple interference and resonance effects are formed in a wide spectral range of 0.3μm to 25μm. This results in high transmission in the visible light band of 0.4μm to 0.7μm, high reflection in the ultraviolet band of 0.3μm to 0.4μm and the near-infrared band of 0.7μm to 2.5μm to block solar thermal radiation, and efficient radiative heat dissipation in the mid-far-infrared band of 2.5μm to 25μm. Ultimately, without relying on external energy input, the structure achieves an integrated function of spectral selective modulation and spontaneous cooling.
[0037] To achieve an effective selective reflection structure within the ultraviolet to near-infrared spectral band (0.3 μm to 2.5 μm) through sufficient refractive index alternation and interface interference, and to provide a sufficient basis for intrinsic material absorption and resonance modulation for high emission in the mid-to-far-infrared band (2.5 μm to 25 μm), in some embodiments, the total number of layers A is greater than or equal to 25, the total number of layers B is greater than or equal to 25, and the total number of layers C is greater than or equal to 35. Simultaneously, to avoid performance degradation in a particular band due to singular optical characteristics and to ensure a balanced and synergistic overall spectral response, the total number of layers A, B, and C is less than or equal to 50% of the total number of passive cooling layers.
[0038] To ensure that each layer in the passive cooling layer can effectively participate in optical interference over a wide spectral range, the thickness of each of the A, B, and C layers is greater than or equal to 5 nm and less than or equal to 1000 nm, while the thickness of the passive cooling layer is greater than or equal to 10 μm.
[0039] In some embodiments, the total number of layers A, B, and C can be 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, etc. In order to achieve the best balance between optical performance, fabrication efficiency, and structural stability, and to ensure the synergistic control effect of high visible light transmittance, high ultraviolet and near-infrared reflectance, and high mid- and far-infrared emissivity in a wide spectral range of 0.3 μm to 25 μm, the total number of layers A, B, and C is preferably 94 to 98, and more preferably 96.
[0040] When the total number of passive cooling layers is 96, in one embodiment, the first layer of the passive cooling layer is layer A, with a thickness of 190nm to 193nm; the second layer is layer B, with a thickness of 27nm to 30nm; the third layer is layer A, with a thickness of 58nm to 60nm; the fourth layer is layer C, with a thickness of 5nm to 6nm; the fifth layer is layer A, with a thickness of 824nm to 827nm; the sixth layer is layer B, with a thickness of 49nm to 51nm; the seventh layer is layer A, with a thickness of 16nm to 18nm; the eighth layer is layer C, with a thickness of 118nm to 120nm; the ninth layer is layer A, with a thickness of 171nm to 173nm; the tenth layer is layer C, with a thickness of 100nm to 102nm; the first... Layer 1 is layer B, with a thickness of 15nm to 17nm; layer 12 is layer C, with a thickness of 10nm to 12nm; layer 13 is layer A, with a thickness of 344nm to 346nm; layer 14 is layer C, with a thickness of 26nm to 27nm; layer 15 is layer B, with a thickness of 33nm to 35nm; layer 16 is layer C, with a thickness of 31nm to 34nm; layer 17 is layer A, with a thickness of 164nm to 166nm; layer 18 is layer C, with a thickness of 100nm to 104nm; layer 19 is layer A, with a thickness of 159nm to 162nm; layer 20 is layer C, with a thickness of 107nm to 109nm; layer 21 is layer A, with a thickness of 173nm to 175nm; layer 22 is... Layer C, with a thickness of 110nm to 112nm; Layer 23 is Layer A, with a thickness of 172nm to 174nm; Layer 24 is Layer C, with a thickness of 104nm to 106nm; Layer 25 is Layer A, with a thickness of 157nm to 159nm; Layer 26 is Layer C, with a thickness of 105nm to 107nm; Layer 27 is Layer A, with a thickness of 199nm to 201nm; Layer 28 is Layer B, with a thickness of 105nm to 107nm; Layer 29 is Layer C, with a thickness of 119nm to 121nm; Layer 30 is Layer A, with a thickness of 178nm to 180nm; Layer 31 is Layer C, with a thickness of 217nm to 219nm; Layer 32 is Layer A, with a thickness of 175nm to 177nm. The thickness of the layers is as follows: Layer 33 is layer C, with a thickness of 115nm to 117nm; Layer 34 is layer A, with a thickness of 328nm to 332nm; Layer 35 is layer C, with a thickness of 115nm to 117nm; Layer 36 is layer A, with a thickness of 327nm to 329nm; Layer 37 is layer C, with a thickness of 12nm to 14nm; Layer 38 is layer B, with a thickness of 12nm to 13nm; Layer 39 is layer C, with a thickness of 95nm to 97nm; Layer 40 is layer A, with a thickness of 182nm to 184nm; Layer 41 is layer B, with a thickness of 52nm to 54nm; Layer 42 is layer A, with a thickness of 114nm to 116nm; Layer 43 is layer B, with a thickness of 64nm to 66nm.Layer 44 is layer C, with a thickness of 153nm to 155nm; layer 45 is layer B, with a thickness of 20nm to 22nm; layer 46 is layer C, with a thickness of 30nm to 32nm; layer 47 is layer A, with a thickness of 188nm to 189nm; layer 48 is layer C, with a thickness of 129nm to 131nm; layer 49 is layer B, with a thickness of 12nm to 14nm; layer 50 is layer C, with a thickness of 99nm to 101nm; layer 51 is layer B, with a thickness of 24nm to 26nm; layer 52 is layer C, with a thickness of 16nm to 18nm; layer 53 is layer A, with a thickness of 316nm to 319nm; layer 54 is layer B, with a thickness of 43nm to 46nm; layer 55 is layer C. The thickness of the first layer is 95nm to 97nm; the 56th layer is layer B, with a thickness of 22nm to 24nm; the 57th layer is layer C, with a thickness of 10nm to 11nm; the 58th layer is layer A, with a thickness of 284nm to 286nm; the 59th layer is layer B, with a thickness of 43nm to 44nm; the 60th layer is layer C, with a thickness of 105nm to 107nm; the 61st layer is layer B, with a thickness of 65nm to 67nm; the 62nd layer is layer A, with a thickness of 241nm to 243nm; the 63rd layer is layer B, with a thickness of 57nm to 59nm; the 64th layer is layer C, with a thickness of 229nm to 231nm; the 65th layer is layer B, with a thickness of 24nm to 25nm; the 66th layer is layer C, with a thickness of 18nm to 20nm. nm; Layer 67 is layer A, with a thickness of 338nm to 342nm; Layer 68 is layer C, with a thickness of 15nm to 17nm; Layer 69 is layer B, with a thickness of 21nm to 22nm; Layer 70 is layer C, with a thickness of 116nm to 117nm; Layer 71 is layer B, with a thickness of 6nm to 8nm; Layer 72 is layer C, with a thickness of 99nm to 101nm; Layer 73 is layer C, with a thickness of 5nm to 7nm; Layer 74 is layer B, with a thickness of 17nm to 19nm; Layer 75 is layer C, with a thickness of 11nm to 12nm; Layer 76 is layer B, with a thickness of 34nm to 36nm; Layer 77 is layer A, with a thickness of 263nm to 265nm; Layer 78 is layer B, with a thickness of... Layer 65nm to 67nm; Layer 79 is a C layer with a thickness of 129nm to 131nm; Layer 80 is a B layer with a thickness of 10nm to 11nm; Layer 81 is a C layer with a thickness of 101nm to 103nm; Layer 82 is a B layer with a thickness of 20nm to 22nm; Layer 83 is a C layer with a thickness of 18nm to 20nm; Layer 84 is an A layer with a thickness of 354nm to 356nm; Layer 85 is a C layer with a thickness of 18nm to 20nm; Layer 86 is a B layer with a thickness of 23nm to 25nm; Layer 87 is a C layer with a thickness of 192nm to 194nm; Layer 88 is a B layer with a thickness of 26nm to 28nm; Layer 89 is a C layer with a thickness of 18nm to 20nm.Layer 90 is layer A, with a thickness of 377nm to 379nm; layer 91 is layer C, with a thickness of 16nm to 18nm; layer 92 is layer B, with a thickness of 31nm to 33nm; layer 93 is layer C, with a thickness of 169nm to 171nm; layer 94 is layer B, with a thickness of 9nm to 11nm; layer 95 is layer C, with a thickness of 33nm to 35nm; layer 96 is layer A, with a thickness of 90nm to 92nm. At this point, its visible light transmittance, ultraviolet and near-infrared reflectance, and mid- and far-infrared emissivity achieve a better match.
[0041] In some embodiments, layer A, with a refractive index n1 of 1.4 to 1.43, is selected from silicon oxide, layer B, with a refractive index n2 of 1.6 to 1.9, is selected from aluminum oxide and / or hafnium oxide, and layer C, with a refractive index n3 of 2.1 to 2.15, is selected from titanium oxide.
[0042] It is understood that the passive cooling layer of the present invention can be prepared by methods such as magnetron sputtering, and the present invention does not limit this.
[0043] The present invention also provides a product that applies the passive cooling layer described above. The product can be an optical window of a camera, infrared sensor, automotive optical system, etc., such as a camera lens.
[0044] When the passive cooling layer of this invention is used in a product, it can not only maintain high transmittance in the visible light band, ensuring that the image clarity and color fidelity are not affected, but also efficiently reflect near-infrared radiation from the solar spectrum, suppressing the heat accumulation of the device itself. At the same time, it maintains high emissivity in the mid- and far-infrared bands, achieving spontaneous cooling. This effectively solves the technical contradiction that traditional radiation cooling materials cannot simultaneously achieve transparency and efficient heat dissipation, and promotes the application of radiation cooling technology in high-precision, highly integrated optical devices.
[0045] The technical solution of the present invention will be further described below through specific embodiments. However, those skilled in the art will understand that the following embodiments are only for illustrating the present invention and should not be regarded as limiting the scope of the present invention. Unless otherwise specified, specific conditions in the embodiments are performed under conventional conditions or conditions recommended by the manufacturer. Reagents or instruments used without specified manufacturers are all commercially available conventional products.
[0046] Example 1
[0047] The PC substrate was ultrasonically cleaned with deionized water and ethanol, and then allowed to air dry. Afterward, the clean substrate was placed in a plasma cleaning machine for 10 minutes to complete the pretreatment. It was then placed in a magnetron vacuum chamber and evacuated to a vacuum level of 4.5 × 10⁻⁶. -4The working pressure was set to 1.0 Pa. Then, the power of the RF power supply for the silica target was set to 120 W, the power of the RF power supply for the alumina target was set to 110 W, and the power of the RF power supply for the titanium dioxide target was set to 120 W. Sputtering was then started separately. After sputtering was completed, the sample was taken out, and the final product was obtained.
[0048] The sputtering process controls the target material and thickness to achieve the following sputtering coating sequence: Layer 1 is a silicon dioxide layer with a thickness of 192 nm; Layer 2 is an aluminum oxide layer with a thickness of 28 nm; Layer 3 is a silicon dioxide layer with a thickness of 59 nm; Layer 4 is a titanium dioxide layer with a thickness of 5.5 nm; Layer 5 is a silicon dioxide layer with a thickness of 826 nm; Layer 6 is an aluminum oxide layer with a thickness of 50 nm; Layer 7 is a silicon dioxide layer with a thickness of 17 nm; Layer 8 is a titanium dioxide layer with a thickness of 119 nm; Layer 9 is a silicon dioxide layer with a thickness of 172 nm; Layer 10 is a titanium dioxide layer with a thickness of 101 nm; Layer 11 is an aluminum oxide layer with a thickness of 16 nm; ... Layer 12 is a titanium dioxide layer with a thickness of 11 nm; layer 13 is a silicon dioxide layer with a thickness of 345 nm; layer 14 is a titanium dioxide layer with a thickness of 26.5 nm; layer 15 is an aluminum oxide layer with a thickness of 34 nm; layer 16 is a titanium dioxide layer with a thickness of 33 nm; layer 17 is a silicon dioxide layer with a thickness of 165 nm; layer 18 is a titanium dioxide layer with a thickness of 102 nm; layer 19 is a silicon dioxide layer with a thickness of 161 nm; layer 20 is a titanium dioxide layer with a thickness of 108 nm; layer 21 is a silicon dioxide layer with a thickness of 174 nm; layer 22 is a titanium dioxide layer with a thickness of 111 nm; layer 23 is a titanium dioxide layer with a thickness of 173 nm. Layer 24 is a 105nm thick titanium dioxide layer; Layer 25 is a 158nm thick silicon dioxide layer; Layer 26 is a 106nm thick titanium dioxide layer; Layer 27 is a 200nm thick silicon dioxide layer; Layer 28 is a 106nm thick aluminum oxide layer; Layer 29 is a 120nm thick titanium dioxide layer; Layer 30 is a 179nm thick silicon dioxide layer; Layer 31 is a 218nm thick titanium dioxide layer; Layer 32 is a 176nm thick silicon dioxide layer; Layer 33 is a 116nm thick titanium dioxide layer; Layer 34 is a 330nm thick silicon dioxide layer; Layer 35 is a 116nm thick titanium dioxide layer; Layer 36 is a 330nm thick silicon dioxide layer; Layer 37 is a 200nm thick silicon dioxide layer; Layer 28 is a 106nm thick aluminum oxide layer; Layer 29 is a 120nm thick titanium dioxide layer; Layer 30 is a 179nm thick silicon dioxide layer; Layer 31 is a 218nm thick titanium dioxide layer; Layer 32 is a 176nm thick silicon dioxide layer; Layer 33 is a 116nm thick titanium dioxide layer; Layer 34 is a 330nm thick silicon dioxide layer; Layer 35 is a 116nm thick titanium dioxide layer; Layer 35 is a 116nm thick titanium dioxide layer; Layer 36 is a 330nm thick titanium dioxide layer; Layer 35 is a 116nm thick titanium dioxide layer; Layer 36 is a 330nm thick titanium dioxide layer; Layer 37 is a 330nm thick titanium dioxide layer; Layer 38 is a 116nm thick titanium dioxide layer; Layer 39 is a 116nm thick titanium dioxide layer; Layer 30 is a 116nm thick titanium dioxide layer; Layer 35 is a 116nm thick titanium dioxide layer; Layer 36 is a 116nm thick titanium dioxide layer Layer 36 is a 6nm thick titanium dioxide layer; layer 37 is a 13nm thick titanium dioxide layer; layer 38 is a 12.5nm thick aluminum oxide layer; layer 39 is a 96nm thick titanium dioxide layer; layer 40 is a 183nm thick silicon dioxide layer; layer 41 is a 53nm thick aluminum oxide layer; layer 42 is a 115nm thick silicon dioxide layer; layer 43 is a 65nm thick aluminum oxide layer; layer 44 is a 154nm thick titanium dioxide layer; layer 45 is a 21nm thick aluminum oxide layer; layer 46 is a 31nm thick titanium dioxide layer; layer 47 is a 188nm thick titanium dioxide layer.Layer 48 is a 5nm thick silicon dioxide layer; layer 49 is a 130nm thick titanium dioxide layer; layer 50 is a 100nm thick titanium dioxide layer; layer 51 is a 25nm thick aluminum oxide layer; layer 52 is a 17nm thick titanium dioxide layer; layer 53 is a 318nm thick silicon dioxide layer; layer 54 is a 44nm thick aluminum oxide layer; layer 55 is a 96nm thick titanium dioxide layer; layer 56 is a 23nm thick aluminum oxide layer; layer 57 is a 10.5nm thick titanium dioxide layer; layer 58 is a 285nm thick silicon dioxide layer; layer 59 is a 43.5nm thick titanium dioxide layer. The layers are: Alumina layer; Layer 60 is a titanium dioxide layer with a thickness of 106 nm; Layer 61 is an alumina layer with a thickness of 66 nm; Layer 62 is a silicon dioxide layer with a thickness of 242 nm; Layer 63 is an alumina layer with a thickness of 58 nm; Layer 64 is a titanium dioxide layer with a thickness of 230 nm; Layer 65 is an alumina layer with a thickness of 24.5 nm; Layer 66 is a titanium dioxide layer with a thickness of 19 nm; Layer 67 is a silicon dioxide layer with a thickness of 340 nm; Layer 68 is a titanium dioxide layer with a thickness of 16 nm; Layer 69 is an alumina layer with a thickness of 21.5 nm; Layer 70 is a titanium dioxide layer with a thickness of 116.5 nm; Layer 71 is an alumina layer with a thickness of 7 nm; Layer 72 is a 100nm thick titanium dioxide layer; layer 73 is a 6nm thick titanium dioxide layer; layer 74 is an 18nm thick aluminum oxide layer; layer 75 is an 11.5nm thick titanium dioxide layer; layer 76 is a 35nm thick aluminum oxide layer; layer 77 is a 264nm thick silicon dioxide layer; layer 78 is a 66nm thick aluminum oxide layer; layer 79 is a 130nm thick titanium dioxide layer; layer 80 is a 10.5nm thick aluminum oxide layer; layer 81 is a 102nm thick titanium dioxide layer; layer 82 is a 21nm thick aluminum oxide layer; layer 83 is a 19nm thick titanium dioxide layer; layer 84 is a 3nm thick titanium dioxide layer; layer 85 is a 11.5nm thick titanium dioxide layer; layer 86 is a 35nm thick aluminum oxide layer; layer 87 is a 264nm thick silicon dioxide layer; layer 88 is a 66nm thick aluminum oxide layer; layer 89 is a 130nm thick titanium dioxide layer; layer 80 is a 10.5nm thick aluminum oxide layer; layer 81 is a 102nm thick titanium dioxide layer; layer 82 is a 21nm thick aluminum oxide layer; layer 83 is a 19nm thick titanium dioxide layer; layer 84 is a 3nm thick titanium dioxide layer; layer 85 is a 11.5nm thick titanium dioxide layer; layer 86 is a 35nm thick titanium dioxide layer; layer 87 is a 264nm thick silicon dioxide layer; layer 88 is a 66nm thick aluminum oxide layer; layer 89 is a 130nm thick titanium dioxide layer; layer 80 is a 10.5nm thick aluminum oxide layer; layer 80 is a 102nm thick titanium dioxide layer; layer 81 is a 102nm thick titanium dioxide layer; layer 82 is a 21nm thick aluminum oxide layer; layer 83 is a 19nm thick The layers are as follows: Layer 85 is a 55nm thick silicon dioxide layer; Layer 85 is a 19nm thick titanium dioxide layer; Layer 86 is a 24nm thick aluminum oxide layer; Layer 87 is a 193nm thick titanium dioxide layer; Layer 88 is a 27nm thick aluminum oxide layer; Layer 89 is a 19nm thick titanium dioxide layer; Layer 90 is a 378nm thick silicon dioxide layer; Layer 91 is a 17nm thick titanium dioxide layer; Layer 92 is a 32nm thick aluminum oxide layer; Layer 93 is a 170nm thick titanium dioxide layer; Layer 94 is a 10nm thick aluminum oxide layer; Layer 95 is a 34nm thick titanium dioxide layer; and Layer 96 is a 91nm thick silicon dioxide layer.
[0049] The passive cooling layer obtained in this embodiment was tested, and the results are as follows: Figure 1 and Figure 2 As shown, from Figure 1It can be seen that the passive cooling layer has an average transmittance of less than 1% in the ultraviolet band (0.3μm to 0.4μm), an average transmittance of 88.9% in the visible light band (0.4μm to 0.7μm), and an average transmittance of less than 9% in the near-infrared band (0.7μm to 2.5μm). Meanwhile, from... Figure 2 It can be seen that the passive cooling layer has an average absorption of over 89% in the mid-to-far infrared band from 2.5μm to 25μm.
[0050] Comparative Example 1
[0051] The only difference between Comparative Example 1 and Example 1 is that the thickness of all silicon dioxide layers, aluminum oxide layers and titanium dioxide layers is 50 nm.
[0052] The passive cooling layer obtained in this comparative example was tested, and the results are as follows: Figure 3 and Figure 4 As shown, from Figure 3 It can be seen that the passive cooling layer has an average transmittance of less than 1% in the ultraviolet band (0.3μm to 0.4μm), an average transmittance of 24.7% in the visible light band (0.4μm to 0.7μm), and an average transmittance of 53.8% in the near-infrared band (0.7μm to 2.5μm). Meanwhile, from... Figure 4 It can be seen that the passive cooling layer has an average absorption of 76.4% in the mid-far infrared band from 2.5μm to 25μm.
[0053] Comparative Example 2
[0054] The only difference between Comparative Example 2 and Example 1 is that the coating is applied only up to the 48th layer.
[0055] The passive cooling layer obtained in this comparative example was tested, and the results are as follows: Figure 5 and Figure 6 As shown, from Figure 5 It can be seen that the passive cooling layer has an average transmittance of 1.5% in the ultraviolet band (0.3μm to 0.4μm), an average transmittance of 79.8% in the visible light band (0.4μm to 0.7μm), and an average transmittance of 20.8% in the near-infrared band (0.7μm to 2.5μm). Meanwhile, from... Figure 6 It can be seen that the passive cooling layer has an average absorption of 76.9% in the mid-far infrared band from 2.5μm to 25μm.
[0056] Comparative Example 3
[0057] The only difference between Comparative Example 3 and Example 1 is that the first to 96th layers were adjusted to be deposited in a periodic order of silicon dioxide, aluminum oxide and titanium dioxide, while the thickness remained unchanged according to the order of the first to 96th layers.
[0058] The passive cooling layer obtained in this comparative example was tested, and the results are as follows: Figure 7 and Figure 8 As shown, from Figure 7 It can be seen that the passive cooling layer has an average transmittance of 1% in the ultraviolet band (0.3μm to 0.4μm), an average transmittance of 19.5% in the visible light band (0.4μm to 0.7μm), and an average transmittance of 20.3% in the near-infrared band (0.7μm to 2.5μm). Meanwhile, from... Figure 8 It can be seen that the passive cooling layer has an average absorption of 66.4% in the mid-far infrared band from 2.5μm to 25μm.
[0059] Therefore, it is evident that only by non-periodicly depositing silicon dioxide, aluminum oxide, and titanium dioxide layers to more than 90 layers can high transmittance be achieved in the 0.4μm to 0.7μm visible light band, high reflectivity be formed in the 0.3μm to 0.4μm ultraviolet band and the 0.7μm to 2.5μm near-infrared band to block solar thermal radiation, and efficient radiative heat dissipation be achieved in the 2.5μm to 25μm mid-far-infrared band.
[0060] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0061] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.
Claims
1. A passive refrigeration layer, characterized in that, The passive refrigeration layer comprises A layers, B layers and C layers arranged in a non-periodic stack, wherein the A layers are selected from oxide layers having a refractive index n1, 1.4 ≤ n1 ≤ 1.43, the B layers are selected from oxide layers having a refractive index n2, 1.6 ≤ n2 ≤ 1.9, the C layers are selected from oxide layers having a refractive index n3, 2.1 ≤ n3 ≤ 2.15, and the total number of the A layers, the B layers and the C layers is greater than or equal to 90 layers.
2. The passive refrigeration layer of claim 1, wherein, The total number of the A layers, the B layers and the C layers is 94 layers to 98 layers.
3. The passive refrigeration layer of claim 1, wherein, The total number of the A layers is greater than or equal to 25 layers; and / or, the total number of the B layers is greater than or equal to 25 layers; and / or, the total number of the C layers is greater than or equal to 35 layers; and / or, the total number of the A layers, the total number of the B layers and the total number of the C layers are all less than or equal to 50% of the total number of layers of the passive refrigeration layer.
4. The passive refrigeration layer of claim 1, wherein, In the A layers, the B layers and the C layers, the thickness of a single layer is less than or equal to 1000 nm; and / or, in the A layers, the B layers and the C layers, the thickness of a single layer is greater than or equal to 5 nm.
5. The passive refrigeration layer of claim 1, wherein, The thickness of the passive refrigeration layer is greater than or equal to 10 μm.
6. The passive refrigeration layer according to any one of claims 1 to 5, wherein, The total number of the A layers, the B layers and the C layers is 96 layers.
7. The passive refrigeration layer of claim 6, wherein, The first layer of the passive refrigeration layer is an A layer with a thickness of 190-193 nm; the second layer is a B layer with a thickness of 27-30 nm; the third layer is an A layer with a thickness of 58-60 nm; the fourth layer is a C layer with a thickness of 5-6 nm; the fifth layer is an A layer with a thickness of 824-827 nm; the sixth layer is a B layer with a thickness of 49-51 nm; the seventh layer is an A layer with a thickness of 16-18 nm; the eighth layer is a C layer with a thickness of 118-120 nm; the ninth layer is an A layer with a thickness of 171-173 nm; the tenth layer is a C layer with a thickness of 100-102 nm; the eleventh layer is a B layer with a thickness of 15-17 nm; the twelfth layer is a C layer with a thickness of 10-12 nm; the thirteenth layer is an A layer with a thickness of 344-346 nm; the fourteenth layer is a C layer with a thickness of 26-27 nm; the fifteenth layer is a B layer with a thickness of 33-35 nm; the sixteenth layer is a C layer with a thickness of 31-34 nm; the seventeenth layer is an A layer with a thickness of 164-166 nm; the eighteenth layer is a C layer with a thickness of 100-104 nm; the nineteenth layer is an A layer with a thickness of 159-162 nm; the twentieth layer is a C layer with a thickness of 107-109 nm; the twenty-first layer is an A layer with a thickness of 173-175 nm; the twenty-second layer is a C layer with a thickness of 110-112 nm; the twenty-third layer is an A layer with a thickness of 172-174 nm; the twenty-fourth layer is a C layer with a thickness of 104-106 nm; the twenty-fifth layer is an A layer with a thickness of 157-159 nm; the twenty-sixth layer is a C layer with a thickness of 105-107 nm; the twenty-seventh layer is an A layer with a thickness of 199-201 nm; the twenty-eighth layer is a B layer with a thickness of 105-107 nm; the twenty-ninth layer is a C layer with a thickness of 119-121 nm; the thirtieth layer is an A layer with a thickness of 178-180 nm; the thirty-first layer is a C layer with a thickness of 217-219 nm; the thirty-second layer is an A layer with a thickness of 175-177 nm; the thirty-third layer is a C layer with a thickness of 115-117 nm; the thirty-fourth layer is an A layer with a thickness of 328-332 nm; the thirty-fifth layer is a C layer with a thickness of 115-117 nm; the thirty-sixth layer is an A layer with a thickness of 327-329 nm; the thirty-seventh layer is a C layer with a thickness of 12-14 nm; the thirty-eighth layer is a B layer with a thickness of 12-13 nm; the thirty-ninth layer is a C layer with a thickness of 95-97 nm; the fortieth layer is an A layer with a thickness of 182-184 nm; the forty-first layer is a B layer with a thickness of 52-54 nm; the forty-second layer is an A layer with a thickness of 114-116 nm; the forty-third layer is a B layer with a thickness of 64-66 nm; the forty-fourth layer is a C layer with a thickness of 153-155 nm; the forty-fifth layer is a B layer with a thickness of 20-22 nm;The 46th layer is a C layer, 30-32 nm in thickness; the 47th layer is an A layer, 188-189 nm in thickness; the 48th layer is a C layer, 129-131 nm in thickness; the 49th layer is a B layer, 12-14 nm in thickness; the 50th layer is a C layer, 99-101 nm in thickness; the 51st layer is a B layer, 24-26 nm in thickness; the 52nd layer is a C layer, 16-18 nm in thickness; the 53rd layer is an A layer, 316-319 nm in thickness; the 54th layer is a B layer, 43-46 nm in thickness; the 55th layer is a C layer, 95-97 nm in thickness; the 56th layer is a B layer, 22-24 nm in thickness; the 57th layer is a C layer, 10-11 nm in thickness; the 58th layer is an A layer, 284-286 nm in thickness; the 59th layer is a B layer, 43-44 nm in thickness; the 60th layer is a C layer, 105-107 nm in thickness; the 61st layer is a B layer, 65-67 nm in thickness; the 62nd layer is an A layer, 241-243 nm in thickness; the 63rd layer is a B layer, 57-59 nm in thickness; the 64th layer is a C layer, 229-231 nm in thickness; the 65th layer is a B layer, 24-25 nm in thickness; the 66th layer is a C layer, 18-20 nm in thickness; the 67th layer is an A layer, 338-342 nm in thickness; the 68th layer is a C layer, 15-17 nm in thickness; the 69th layer is a B layer, 21-22 nm in thickness; the 70th layer is a C layer, 116-117 nm in thickness; the 71st layer is a B layer, 6-8 nm in thickness; the 72nd layer is a C layer, 99-101 nm in thickness; the 73rd layer is a C layer, 5-7 nm in thickness; the 74th layer is a B layer, 17-19 nm in thickness; the 75th layer is a C layer, 11-12 nm in thickness; the 76th layer is a B layer, 34-36 nm in thickness; the 77th layer is an A layer, 263-265 nm in thickness; the 78th layer is a B layer, 65-67 nm in thickness; the 79th layer is a C layer, 129-131 nm in thickness; the 80th layer is a B layer, 10-11 nm in thickness; the 81st layer is a C layer, 101-103 nm in thickness; the 82nd layer is a B layer, 20-22 nm in thickness; the 83rd layer is a C layer, 18-20 nm in thickness; the 84th layer is an A layer, 354-356 nm in thickness; the 85th layer is a C layer, 18-20 nm in thickness; the 86th layer is a B layer, 23-25 nm in thickness; the 87th layer is a C layer, 192-194 nm in thickness; the 88th layer is a B layer, 26-28 nm in thickness; the 89th layer is a C layer, 18-20 nm in thickness; the 90th layer is an A layer, 377-379 nm in thickness; the 91st layer is a C layer, 16-18 nm in thickness;Layer 92 is a B layer with a thickness of 31-33 nm; layer 93 is a C layer with a thickness of 169-171 nm; layer 94 is a B layer with a thickness of 9-11 nm; layer 95 is a C layer with a thickness of 33-35 nm; and layer 96 is an A layer with a thickness of 90-92 nm.
8. The passive refrigeration layer according to any one of claims 1 to 5, wherein, The A layers are selected from silicon oxide layers; and / or, the B layers are selected from aluminum oxide layers and / or hafnium oxide layers; and / or, the C layers are selected from titanium oxide layers.
9. A product using the passive refrigeration layer according to any one of claims 1 to 8.
10. The product of claim 9, wherein, The product is a video camera.