Display panel and electronic device including the same

Abstract

The invention relates to a display panel and an electronic device including the same. The display panel includes: a substrate having an opening; an inorganic insulating structure on the substrate; a light emitting diode defining a display area extending around the opening; an encapsulation layer on the light emitting diode; a trench in the inorganic insulating structure and in a non-display area between the opening and the display area in the substrate; an insulating layer on one edge portion of the trench and having a recess defined therein; and a first metal layer and a second metal layer spaced apart from each other on the insulating layer. The first metal layer and the second metal layer respectively have a first overhang portion and a second overhang portion extending toward the groove, one of the light emitting diodes includes a pixel electrode, a counter electrode on the pixel electrode, and an intermediate layer, and an organic layer of the intermediate layer is separated into a plurality of portions by the first overhang portion and the second overhang portion.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0131094, filed on September 26, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The embodiments of this disclosure relate to a display panel and an electronic device including the display panel. Background Technology

[0004] Recently, the applications of display devices have diversified. Furthermore, as display devices have become thinner and lighter, their range of uses is expanding.

[0005] As the display area occupies more space within a display device, various functions are being added to or linked to the display device. As a way to both expand the area and increase functionality, display panels in which various components can be arranged within the display area are being researched. Summary of the Invention

[0006] Embodiments of this disclosure include a display panel having an opening region in which various types of components can be arranged, and a display device including the display panel. However, the above aspects and features are merely examples, and the scope of this disclosure is not limited thereto.

[0007] Other aspects and features will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practice of the embodiments described herein.

[0008] According to embodiments of this disclosure, a display panel includes: a substrate having an upper surface and a lower surface opposite to the upper surface, and an opening extending from the upper surface to the lower surface; an inorganic insulating structure including a plurality of inorganic insulating layers on the upper surface of the substrate; a plurality of light-emitting diodes on the upper surface of the inorganic insulating structure, defining a display area extending around the periphery of the opening; an encapsulation layer on the plurality of light-emitting diodes, including an inorganic encapsulation layer and an organic encapsulation layer; a trench in the inorganic insulating structure, located in a non-display area between the opening and the display area in the substrate; an insulating layer on an edge portion of the trench, having a recess defined therein; and a first metal layer and a second metal layer spaced apart from each other on the insulating layer. The first metal layer has a first overhanging portion extending toward the recess from a point where the lower surface of the first metal layer and the inner surface of the defined recess of the insulating layer intersect each other, and the first overhanging portion overlaps with the trench. The second metal layer has a second overhanging portion extending toward the recess from a point where the lower surface of the second metal layer and the inner surface of the defined recess of the insulating layer intersect each other. At least one of the plurality of light-emitting diodes includes a pixel electrode, a counter electrode on the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode, wherein the organic layer of the intermediate layer is separated into a plurality of portions by a first overhang portion and a second overhang portion.

[0009] The trench may have a first edge portion adjacent to an opening in the substrate and a second edge portion opposite to the first edge portion, and the insulating layer may overlap the second edge portion.

[0010] The insulating layer may include organic insulating materials.

[0011] The upper surface of the first overhanging portion can be substantially parallel to a virtual plane parallel to the substrate, or it can be tilted downwards.

[0012] A portion of the first metal layer on the opposite side of the first overhang can directly contact the bottom surface of the trench, and a portion of the second metal layer can directly contact the upper surface of the inorganic insulating structure.

[0013] The display panel may further include a protective layer on a first overhanging portion of the first metal layer.

[0014] The protective layer may be on the upper and side surfaces of the first overhang.

[0015] The display panel may further include a protective material layer on the bottom surface of the recess, and the protective material layer may include the same material as the protective layer.

[0016] The protective layer can be made of the same material as the pixel electrode.

[0017] The protective layer can extend above the bottom surface of the trench and can be in direct contact with the bottom surface of the trench.

[0018] The display panel may further include: a partition wall located in the non-display area and surrounding an opening in the substrate, and the partition wall may be between the trench and the display area.

[0019] The display panel may further include: a first insulating layer, spaced apart from and between the trench and the display area; and a pair of metal layers on the first insulating layer, each having a hanging portion. The hanging portion protrudes from the point where the lower surface of a corresponding metal layer of the pair of metal layers intersects with the inner surface of the defining groove of the first insulating layer toward the groove of the first insulating layer.

[0020] One of the metal layers in a pair of metal layers may include a portion opposite to the overhanging portion of that one metal layer in the pair of metal layers, and that portion of that one metal layer in the pair of metal layers may overlap with the partition wall.

[0021] The display panel may further include: an additional protective layer on the overhanging portion of one of a pair of metal layers.

[0022] An additional protective layer may extend over the upper surface of the overhanging portion of one of the pair of metal layers and may overlap with the partition wall.

[0023] According to embodiments of the present disclosure, the electronic device includes a display panel as described above and a component that overlaps with an opening area of ​​the display panel.

[0024] Components may include cameras or sensors. Attached Figure Description

[0025] The above and other aspects and features of the embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0026] Figure 1 This is a schematic perspective view of an electronic device according to an embodiment;

[0027] Figure 2 It is along Figure 1 A schematic cross-sectional view taken from line I-I' in the diagram;

[0028] Figure 3 This is a schematic plan view of the display panel according to an embodiment;

[0029] Figure 4A This is a schematic illustration of an equivalent circuit diagram of a light-emitting diode and a circuit connected to the light-emitting diode according to an embodiment.

[0030] Figure 4B This is a schematic illustration of an equivalent circuit diagram of a light-emitting diode and a circuit connected to the light-emitting diode according to an embodiment.

[0031] Figure 5 This is a plan view of a portion of the display panel according to an embodiment;

[0032] Figure 6 It is along Figure 5 A cross-sectional view taken from line VI-VI' in the diagram;

[0033] Figure 7 It is along Figure 5 A cross-sectional view taken from line VII-VII' in the diagram;

[0034] Figure 8 The display panel according to the embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone VIII in the diagram;

[0035] Figure 9 The display panel according to another embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone VIII in the diagram;

[0036] Figure 10A The display panel according to the embodiment and Figure 8 A cross-sectional view of the part corresponding to zone X in the diagram;

[0037] Figure 10B The display panel according to another embodiment and Figure 8 A cross-sectional view of the part corresponding to zone X in the diagram;

[0038] Figure 11 The display panel according to the embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone XI in the diagram;

[0039] Figure 12 The display panel according to another embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone XI in the diagram;

[0040] Figure 13 The display panel according to the embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone XIII in the diagram;

[0041] Figure 14 The display panel according to another embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone XIII in the diagram;

[0042] Figure 15 The display panel according to another embodiment and Figure 7 A cross-sectional view of the portion corresponding to zone XIII in the diagram;

[0043] Figures 16A to 16GThis is a cross-sectional view of the internal non-display area illustrating the manufacturing process steps of the display panel according to an embodiment; and

[0044] Figure 17 This is a cross-sectional view of a portion of a display panel according to another embodiment. Detailed Implementation

[0045] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings. In this regard, the described embodiments may take different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below only with reference to the figures to illustrate aspects and features of the present description.

[0046] Because this disclosure allows for various modifications and numerous embodiments, exemplary embodiments will be illustrated in the accompanying drawings and described in detail in the written description. Aspects and features of this disclosure, as well as ways of implementing them, will become apparent from the embodiments described in detail later with reference to the accompanying drawings. However, this disclosure is not limited to the following embodiments, but can be implemented in various forms.

[0047] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, the element or layer may be directly on, connected to, or coupled to that other element or layer, or one or more intermediary elements or layers may be present. When an element or layer is referred to as being "directly" on, directly connected to, or directly coupled to another element or layer, no intermediary element or layer is present. For example, when a first element is described as being "coupled" or "connected" to a second element, the first element may be directly coupled to or connected to the second element, or the first element may be indirectly coupled to or connected to the second element via one or more intermediary elements.

[0048] In the figures, the dimensions of various elements, layers, etc., may be exaggerated for clarity. The same reference numerals denote the same elements. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, when describing embodiments of this disclosure, the use of “may” refers to “one or more embodiments of this disclosure.” When following a list of elements, expressions such as “at least one of…” and “any one of…” modify the entire list of elements without modifying any individual element in the list. For example, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all or variations thereof. As used herein, the terms “using,” “being used,” and “being exploited” may be considered synonymous with the terms “utilizing,” “being exploited,” and “being exploited,” respectively. As used herein, the terms “substantially,” “about,” and similar terms are used as approximate terms rather than as terms of degree and are intended to describe inherent biases in measurements or calculations that will be recognized by one of ordinary skill in the art.

[0049] It will be understood that although the terms first, second, third, etc., may be used herein to describe various elements, components, areas, layers, and / or segments, these elements, components, areas, layers, and / or segments should not be limited by these terms. These terms are used to distinguish one element, component, area, layer, or segment from another element, component, area, layer, or segment. Therefore, without departing from the teachings of the exemplary embodiments, the first element, component, area, layer, or segment discussed below may be referred to as the second element, component, area, layer, or segment.

[0050] For ease of description, spatial relative terms such as “below,” “under,” “down,” “above,” and “above” may be used herein to describe the relationship of one element or feature as illustrated in the figures to another element(s). It will be understood that, in addition to the orientations depicted in the figures, spatial relative terms are intended to include different orientations of the device in use or operation. For example, if the device in the figures is flipped, the element described as “below” or “under” other elements or features will subsequently be oriented “above” or “above” other elements or features. Thus, the term “below” can include both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein should be interpreted accordingly.

[0051] The terminology used herein is for the purpose of describing embodiments of this disclosure and is not intended to limit this disclosure. As used herein, the singular form “a” is intended to include the plural form as well, unless the context clearly indicates otherwise. It will be further understood that, when used in this specification, the terms “comprising” and / or “including” and variations thereof specify the presence of stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof.

[0052] In view of this disclosure as a whole, those skilled in the art will understand that each suitable feature of the various embodiments of this disclosure may be combined in whole or in part or with one another and may be technically interconnected and operable in a variety of suitable ways, and unless otherwise stated or implied, each embodiment may be implemented independently of one another or in combination with one another in any suitable way.

[0053] Furthermore, any numerical range disclosed and / or recorded herein is intended to include all subranges with the same numerical precision within the recorded range. For example, the range “1.0 to 10.0” is intended to include all subranges between the recorded minimum of 1.0 and the recorded maximum of 10.0 (and including both the recorded minimum of 1.0 and the recorded maximum of 10.0), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit recorded herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit recorded in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to amend this specification (including the claims) to explicitly record any subranges contained within the range explicitly recorded herein. All such ranges are intended to be inherently described in this specification such that any amendments to explicitly record any such subranges will comply with the requirements of Chinese patent law.

[0054] When an embodiment can be implemented in a different manner, the process sequence may differ from the described sequence. For example, two processes described consecutively may be performed concurrently or substantially simultaneously, or they may be performed in the reverse order of their description.

[0055] Figure 1 This is a schematic perspective view of an electronic device 1 according to an embodiment.

[0056] refer to Figure 1Electronic device 1 may include means for displaying (e.g., configured to display) moving or still images, and can be used as a display screen for portable electronic devices such as mobile phones, smartphones, tablet PCs, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and ultra-mobile PCs (UMPCs), and also as a display screen for various products such as televisions, laptops, monitors, billboards, and Internet of Things (IoT) devices. Additionally, according to embodiments, electronic device 1 can be used in wearable devices such as smartwatches, watch phones, glasses-type displays, and head-mounted displays (HMDs). Furthermore, according to embodiments, electronic device 1 can be used as a central information display (CID) arranged on (or in) the dashboard, center instrument panel, or instrument panel of a vehicle; as an interior rearview mirror display replacing the side mirrors of a vehicle; or as a display arranged on the back of the front seats as an entertainment element for the rear seats of a vehicle. For ease of description, Figure 1 The example shown in the diagram is a smartphone.

[0057] Electronic device 1 can have a rectangular shape in a plan view. For example, as shown in the example... Figure 1 As illustrated, electronic device 1 can have a rectangular planar shape, having a shorter side in the x-direction and a longer side in the y-direction. The corners where the shorter side in the x-direction and the longer side in the y-direction of electronic device 1 intersect can be rounded to have curvature (e.g., a specific curvature) or formed at right angles. The flat shape of electronic device 1 is not limited to a rectangle and can have other polygonal, elliptical, or irregular shapes.

[0058] Electronic device 1 may have an open region (e.g., a first region or a first open region) OA and a display region (e.g., a second region) DA that at least partially surrounds the open region OA (e.g., extends at least partially around the periphery of the open region OA). Electronic device 1 may have a non-display region (e.g., a third region) MA (hereinafter referred to as the "inner non-display region MA") adjacent to the open region OA and located within the display region DA, and a non-display region outside the display region DA (e.g., a fourth region) PA (hereinafter referred to as the "outer non-display region PA"). The inner non-display region MA may have a closed loop shape in a plane (e.g., in a plan view) that completely surrounds the open region OA (e.g., extends completely around the periphery of the open region OA) and may be completely surrounded by the display region DA. The outer non-display region PA may completely surround the display region DA in a plane (e.g., in a plan view). In this specification, the phrase "in a plane" or "plan view" refers to the target portion viewed from above, and the phrase "section view" refers to a section formed by vertically cutting the target portion viewed from the side.

[0059] The opening region OA can be located within the display region DA. In an embodiment, for example... Figure 1 As illustrated, the opening region OA can be located in the upper center portion of the display region DA. However, the opening region OA can be positioned in various ways or locations (e.g., on the upper left side of the display region DA or on the upper right side of the display region DA). Figure 1 The embodiment illustrated in the figure has one opening region OA, but in another embodiment, multiple opening regions OA may be included.

[0060] Figure 2 This is a schematic cross-sectional view of an electronic device 1 according to an embodiment, and is along... Figure 1 The cross-sectional view taken from line I-I' in the diagram.

[0061] refer to Figure 2 The electronic device 1 may include a display panel 10 and a component 70 located in an opening region 0A of the display panel 10. The component 70 may be located below the display panel 10. The display panel 10 and the component 70 may be housed in a housing HS.

[0062] The display panel 10 may include an image generation layer 20, an input sensing layer 40, an optical function layer 50, and a cover window 60.

[0063] Image generation layer 20 may include display elements (e.g., light-emitting elements) that emit light to display an image. The display elements may include, for example, an organic light-emitting diode (OLED) comprising an organic emitting layer. In another embodiment, the OLED may be an inorganic OLED comprising inorganic materials. An inorganic OLED may include a PN junction diode comprising inorganic semiconductor materials. When a voltage is applied to the PN junction diode in the forward direction, holes and electrons are injected, and the energy generated by the recombination of holes and electrons is converted into light energy to emit light of a specific color. The inorganic OLED may have a width ranging from a few micrometers to several hundred micrometers or from a few nanometers to several hundred nanometers. In some embodiments, image generation layer 20 may include a quantum dot OLED. For example, the emitting layer of image generation layer 20 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0064] The input sensing layer 40 can obtain coordinate information based on external inputs such as touch events. The input sensing layer 40 may include sensing electrodes or touch electrodes and signal lines (e.g., traces) connected to the sensing electrodes or touch electrodes. The input sensing layer 40 may be disposed on the image generation layer 20. The input sensing layer 40 can detect external inputs using mutual capacitance methods and / or self-capacitance methods.

[0065] The input sensing layer 40 can be formed directly on the image generation layer 20, or it can be formed separately and then bonded to the image generation layer 20 by an adhesive layer such as an optically transparent adhesive. For example, the input sensing layer 40 can be formed continuously after the process of forming the image generation layer 20, in which case the adhesive layer may not be between the input sensing layer 40 and the image generation layer 20. Although Figure 2 The illustration shows an embodiment in which the input sensing layer 40 is located between the image generation layer 20 and the optical functional layer 50, but in another embodiment, the input sensing layer 40 may be arranged on the optical functional layer 50.

[0066] The optical functional layer 50 may include an anti-reflective layer. The anti-reflective layer can reduce the reflectivity of light (e.g., external light) incident from the outside toward the display panel 10 through the cover window 60. The anti-reflective layer may include a retarder and a polarizer. In some embodiments, the anti-reflective layer may include a black matrix and color filters. The color filters may be arranged taking into account the color of light emitted from each of the light-emitting diodes in the image generation layer 20.

[0067] To improve the transmittance of the opening region OA, the display panel 10 may have openings 10OP that penetrate (e.g., extend through) some of the layers constituting the display panel 10. The openings 10OP may include first to third openings 20OP, 40OP, and 50OP that respectively penetrate (e.g., extend through) the image generation layer 20, the input sensing layer 40, and the optical functional layer 50. The first opening 20OP in the image generation layer 20, the second opening 40OP in the input sensing layer 40, and the third opening 50OP in the optical functional layer 50 may overlap (e.g., may be aligned with each other) to form openings 10OP in the display panel 10.

[0068] Cover window 60 can be disposed on optical functional layer 50. Cover window 60 can be bonded to optical functional layer 50 by an adhesive layer such as optically clear adhesive (OCA). Cover window 60 can cover the first opening 20OP in image generation layer 20, the second opening 40OP in input sensing layer 40, and the third opening 50OP in optical functional layer 50.

[0069] The cover window 60 may include glass or plastic materials. The glass material may include ultra-thin glass. The plastic material may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

[0070] The opening area OA can be a type of component area (e.g., sensor area, camera area, speaker area, etc.) where the component 70 for adding various functions to the electronic device 1 is located.

[0071] Component 70 may include electronic elements. For example, component 70 may be an electronic element that utilizes (e.g., receives and / or outputs) light or sound. For example, the electronic element may include a light-utilizing sensor such as an infrared sensor, a camera that receives light and captures images, a sensor that outputs and detects light or sound to measure distance or identify fingerprints, a small light that outputs light, or a speaker that outputs sound. Light-utilizing electronic elements may utilize light of various wavelengths, such as visible light, infrared light, and / or ultraviolet light. The opening region OA corresponds to the area through which light and / or sound can pass from component 70 to the outside or from the outside toward the electronic element.

[0072] Figure 3 This is a schematic plan view of the display panel 10 according to an embodiment.

[0073] refer to Figure 3 The display panel 10 may have an opening area OA, a display area DA, an internal non-display area MA, and an external non-display area PA.

[0074] The display panel 10 may include a plurality of pixels PX arranged in a display area DA, and the display panel 10 may display an image by using light emitted from each pixel PX. Each pixel PX may emit red, green, or blue light by using a light-emitting diode. The light-emitting diode of each pixel PX may be electrically connected to a scan line SL and a data line DL.

[0075] In the external non-display area PA, a scan driver 2100 that provides scan signals to (e.g., outputs to) each pixel PX, a data driver 2200 that provides data signals to (e.g., outputs to) each pixel PX, and a first main power line and a second main power line that respectively provide a first power supply voltage and a second power supply voltage can be arranged. The scan drivers 2100 can be arranged on each opposite side of the display area DA. In such an embodiment, a pixel PX located on the left side relative to the opening area OA can be connected to the left-side scan driver 2100, and a pixel PX located on the right side relative to the opening area OA can be connected to the right-side scan driver 2100.

[0076] An internal non-display area MA may surround an opening area OA. The internal non-display area MA is an area where display elements such as light-emitting diodes are not disposed, but signal lines that provide signals to pixels PX provided around the opening area OA may pass through the internal non-display area MA. For example, data lines DL and / or scan lines SL may pass through the display area DA, but portions of the data lines DL and / or scan lines SL may pass along the edge of the opening 10OP formed in the opening area OA in the display panel 10 through the internal non-display area MA. Figure 3The embodiment illustrated includes a data line DL that passes through the display area DA in the y-direction, but some of the data line DL detours to partially surround an opening area OA in the inner non-display area MA. Scan lines SL may pass through the display area DA in the x-direction and may be spaced apart from each other, with the opening area OA between the scan lines SL.

[0077] Figure 3 The illustration shows an embodiment in which the data driver 2200 is positioned adjacent to one side of the substrate 100; however, according to another embodiment, the data driver 2200 may be located on a printed circuit board electrically connected to pads located on one side of the display panel 10. The printed circuit board may be flexible, and a portion of the printed circuit board may be bent to lie below the rear surface of the substrate 100.

[0078] Figure 4A and Figure 4B Each is a schematic illustration of an equivalent circuit diagram of a light-emitting diode (LED) and a pixel circuit PC connected to the LED according to an embodiment.

[0079] refer to Figure 4A and Figure 4B ,refer to Figure 3 As an example, the pixel PX can be illuminated by a light-emitting diode (LED), and the LED can be electrically connected to the pixel circuit PC.

[0080] The pixel circuit PC may include a first thin-film transistor T1, a second thin-film transistor T2, a third thin-film transistor T3, a fourth thin-film transistor T4, a fifth thin-film transistor T5, a sixth thin-film transistor T6, a seventh thin-film transistor T7, and a storage capacitor Cst.

[0081] Some of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 may include n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) (NMOS), and the remaining thin-film transistors may include p-channel MOSFETs (PMOS). In embodiments, such as... Figure 4A As illustrated, among the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7, the third thin-film transistor T3 and the fourth thin-film transistor T4 can be NMOS, and the remaining thin-film transistors can be PMOS. In another embodiment, as shown... Figure 4B As illustrated in the figure, among the first to the seventh thin-film transistors T1, T2, T3, T4, T5, T6 and T7, the fifth thin-film transistor T5 can be a PMOS, and the remaining thin-film transistors can be NMOS.

[0082] At least one of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 can be a transistor having a low-temperature polycrystalline silicon (LTPS) semiconductor layer, and at least one of the first to seventh thin-film transistors T1, T2, T3, T4, T5, T6, and T7 can be a transistor having an oxide semiconductor layer. In an embodiment, as... Figure 4A As illustrated, the third thin-film transistor T3 and the fourth thin-film transistor T4 may include an oxide semiconductor layer with low leakage current, and the first thin-film transistor T1, the second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 may include a semiconductor layer comprising polycrystalline silicon. In another embodiment, as shown... Figure 4B As illustrated, the fifth thin-film transistor T5 may include a semiconductor layer comprising polycrystalline silicon, and the first thin-film transistor T1, the second thin-film transistor T2, the third thin-film transistor T3, the fourth thin-film transistor T4, the sixth thin-film transistor T6 and the seventh thin-film transistor T7 may include an oxide semiconductor layer.

[0083] The second thin-film transistor T2 can be a data writing thin-film transistor connected to the scan line SL and the data line DL, and can be configured to transfer the data voltage (e.g., the data signal Dm) input from the data line DL to the first thin-film transistor T1 based on the switching voltage (e.g., the switching signal Sn) input from the scan line SL. A storage capacitor Cst can be connected to the first thin-film transistor T1 and the drive voltage line PL, and can store a voltage corresponding to the difference between the voltage received from the second thin-film transistor T2 and the first power supply voltage ELVDD supplied to the drive voltage line PL.

[0084] The first thin-film transistor T1 can be a driving thin-film transistor, connected to the driving voltage line PL and the storage capacitor Cst, and can control the driving current flowing from the driving voltage line PL through the light-emitting diode (LED) in response to the voltage value stored in the storage capacitor Cst. The LED can emit light with a brightness that varies according to the driving current. The second electrode (e.g., the cathode) of the LED can receive a common voltage ELVSS.

[0085] The third thin-film transistor T3 can be a compensation thin-film transistor, and its gate electrode can be connected to the scan line SL. The source electrode (or drain electrode) of the third thin-film transistor T3 can be connected to the drain electrode (or source electrode) of the first thin-film transistor T1, and can be connected to the first electrode of the light-emitting diode (LED) via the sixth thin-film transistor T6. The drain electrode (or source electrode) of the third thin-film transistor T3 can be connected to one electrode of the storage capacitor Cst, the source electrode (or drain electrode) of the fourth thin-film transistor T4, and the gate electrode of the first thin-film transistor T1. The third thin-film transistor T3 can be turned on according to the scan signal Sn received via the scan line SL to connect the gate electrode and drain electrode of the first thin-film transistor T1 to each other, thereby connecting the first thin-film transistor T1 as a diode.

[0086] As an initialization thin-film transistor, the gate electrode of the fourth thin-film transistor T4 can be connected to the previous scan line SL-1. The drain electrode (or source electrode) of the fourth thin-film transistor T4 can be connected to the initialization voltage line VL. The source electrode (or drain electrode) of the fourth thin-film transistor T4 can be connected to one electrode of the storage capacitor Cst, the drain electrode (or source electrode) of the third thin-film transistor T3, and the gate electrode of the first thin-film transistor T1. The fourth thin-film transistor T4 can be turned on according to the previous scan signal Sn-1 received through the previous scan line SL-1 to perform an initialization operation to initialize the voltage of the gate electrode of the first thin-film transistor T1 by transmitting the initialization voltage Vint to the gate electrode of the first thin-film transistor T1.

[0087] The fifth thin-film transistor T5 can be an operation control thin-film transistor, and its gate electrode can be connected to the emitter control line EL. The source electrode (or drain electrode) of the fifth thin-film transistor T5 can be connected to the drive voltage line PL. The drain electrode (or source electrode) of the fifth thin-film transistor T5 can be connected to the source electrode (or drain electrode) of the first thin-film transistor T1 and the drain electrode (or source electrode) of the second thin-film transistor T2.

[0088] The sixth thin-film transistor T6 can be an emitter control thin-film transistor, and its gate electrode can be connected to the emitter control line EL. The source electrode (or drain electrode) of the sixth thin-film transistor T6 can be connected to the drain electrode (or source electrode) of the first thin-film transistor T1 and the source electrode (or drain electrode) of the third thin-film transistor T3. The drain electrode (or source electrode) of the sixth thin-film transistor T6 can be electrically connected to the first electrode of the light-emitting diode (LED). The fifth thin-film transistor T5 and the sixth thin-film transistor T6 can be turned on concurrently (or simultaneously) according to the emitter control signal En received through the emitter control line EL to transmit the drive voltage ELVDD to the LED, so that the drive current flows to the LED.

[0089] The seventh thin-film transistor T7 can be an initialization thin-film transistor that initializes the first electrode of the light-emitting diode (LED). The gate electrode of the seventh thin-film transistor T7 can be connected to the next scan line SL+1. The source electrode (or drain electrode) of the seventh thin-film transistor T7 can be connected to the first electrode of the LED. The drain electrode (or source electrode) of the seventh thin-film transistor T7 can be connected to the initialization voltage line VL. The seventh thin-film transistor T7 can be turned on according to the next scan signal Sn+1 received through the next scan line SL+1 to initialize the first electrode of the LED.

[0090] exist Figure 4A and Figure 4B In one embodiment, the fourth thin-film transistor T4 and the seventh thin-film transistor T7 are connected to the previous scan line SL-1 and the next scan line SL+1, respectively. However, in another embodiment, both the fourth thin-film transistor T4 and the seventh thin-film transistor T7 can be connected to the previous scan line SL-1 and driven according to the previous scan signal Sn-1.

[0091] The other electrode of the storage capacitor Cst can be connected to the drive voltage line PL. Any one of the electrodes of the storage capacitor Cst can be connected together to the gate electrode of the first thin-film transistor T1, the drain electrode (or source electrode) of the third thin-film transistor T3, and the source electrode (or drain electrode) of the fourth thin-film transistor T4.

[0092] The second electrode (e.g., the cathode) of the light-emitting diode (LED) is supplied with a common voltage ELVSS. The LED receives a drive current from the first thin-film transistor T1 to emit light.

[0093] Figure 5 This is a plan view of a portion of the display panel 10 according to an embodiment.

[0094] refer to Figure 5 Pixels PX are arranged within the display area DA. The internal non-display area MA can be located between the opening area OA and the display area DA. Pixels PX adjacent to the opening area OA can be arranged on a plane, spaced apart from each other with the opening area OA as the center. Figure 5 On the plane shown, pixels PX can be arranged perpendicularly to each other with the opening region OA as the center, or they can be spaced apart on the left and right sides with the opening region OA as the center. Because each pixel PX emits red, green, and blue light emitted from the light-emitting diode, Figure 5The positions of pixels PX in the diagram correspond to the positions of the light-emitting diodes (LEDs). Therefore, pixels PX arranged on a plane and spaced apart from each other with respect to the opening region OA can represent LEDs arranged on a plane and spaced apart from each other with respect to the opening region OA. For example, on a plane, LEDs can be arranged perpendicularly to each other with respect to the opening region OA, or they can be spaced apart from each other on the left and right sides with respect to the opening region OA.

[0095] In the signal lines of the pixel circuit PC configured to supply signals to the light-emitting diodes of each pixel PX, the signal lines adjacent to the opening region OA may bypass the opening region OA and / or the opening 10OP. Some of the data lines DL passing through the display region DA may extend in the ±y direction to provide data signals to the pixels PX located above and below the opening region OA, respectively, and may bypass (e.g., may bend) the edges of the opening region OA and / or the opening 10OP in the inner non-display region MA.

[0096] In a data line DL, at least one data line DL's winding portion DL-C1 can be formed on a different layer from the extension portion DL-L1 that passes through the display area DA, and the winding portion DL-C1 and the extension portion DL-L1 can be connected to each other through a contact hole (e.g., a contact opening) CNT. In a data line DL, at least one data line DL's winding portion DL-C2 and the extension portion DL-L2 are located on the same layer, and can be formed as a single unit with the extension portion DL-L2 (e.g., can be integrally formed with the extension portion DL-L2).

[0097] The scan line SL can be separated or broken relative to the opening region OA, and as referenced above. Figure 3 As described above, Figure 3 As shown in the figure, the scan line SL arranged on the left side relative to the opening area OA can receive signals from the scan driver 2100 arranged on the left side relative to the display area DA, and the scan line SL arranged on the right side relative to the opening area OA can receive signals from the scan driver 2100 arranged on the right side relative to the display area DA.

[0098] The dangling structure OHS can be located between the area around which the data line DL of the internal non-display area MA passes and the opening area OA. In the plane, each of the dangling structures OHS can have a closed loop shape around the opening area OA (e.g., extending around the opening area OA), and the dangling structures OHS can be spaced apart from each other.

[0099] Figure 6 It is along Figure 5 The image shows a cross-sectional view of the display panel 10 according to an embodiment, taken from line VI-VI'. Figure 6The diagram shows one of a plurality of light-emitting diodes (hereinafter referred to as the first light-emitting diode) arranged in the display area DA, and a data line located in the inner non-display area MA.

[0100] refer to Figure 6 The display area DA shown herein may include a substrate 100 made of glass or a polymer resin. In an embodiment, the substrate 100 may have an alternating stacked structure comprising a base layer of polymer resin and a barrier layer comprising an inorganic insulating material such as silicon oxide or silicon nitride. The polymer resin may include polymer resins such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate.

[0101] The pixel circuit PC can be formed on the substrate 100, and light-emitting diodes such as organic light-emitting diodes (OLEDs) can be arranged on the pixel circuit PC.

[0102] Before forming the pixel circuit PC, a buffer layer 201 may be formed on the substrate 100 to prevent impurities from penetrating into the pixel circuit PC. The buffer layer 201 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0103] As referenced above Figure 4A or Figure 4B The pixel circuit PC may include a storage capacitor and multiple transistors. In this respect, Figure 6 The diagram illustrates the first thin-film transistor T1, the third thin-film transistor T3, and the storage capacitor Cst.

[0104] The first thin-film transistor T1 may include a semiconductor layer (hereinafter referred to as the first semiconductor layer A1) on a buffer layer 201 and a gate electrode (hereinafter referred to as the first gate electrode GE1) overlapping the channel region C1 of the first semiconductor layer A1. The first semiconductor layer A1 may include a silicon-based semiconductor material, such as polysilicon. The first semiconductor layer A1 may have a channel region C1 and a first region B1 and a second region D1 disposed on the opposite side of the channel region C1. The first region B1 and the second region D1 are regions having a higher concentration of impurities than the channel region C1, and one of the first region B1 and the second region D1 may correspond to a source region and the other may correspond to a drain region.

[0105] The first gate insulating layer 203 may be disposed between the first semiconductor layer A1 and the first gate electrode GE1. The first gate insulating layer 203 may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0106] The first gate electrode GE1 may include a conductive material comprising molybdenum (Mo), aluminum (Al), copper (Cu) and titanium (Ti), and may have a single-layer or multi-layer structure comprising the above materials.

[0107] The storage capacitor Cst may include a lower electrode CE1 and an upper electrode CE2 that overlap each other. In an embodiment, the lower electrode CE1 of the storage capacitor Cst may include a first gate electrode GE1. For example, the first gate electrode GE1 may include the lower electrode CE1 of the storage capacitor Cst. For example, the first gate electrode GE1 and the lower electrode CE1 of the storage capacitor Cst may be integrally formed.

[0108] The first interlayer insulating layer 205 can be disposed between the lower electrode CE1 and the upper electrode CE2 of the storage capacitor Cst. The first interlayer insulating layer 205 may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0109] The upper electrode CE2 of the storage capacitor Cst may include a low-resistance conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may have a single-layer or multi-layer structure including the above materials.

[0110] The second interlayer insulating layer 207 can be disposed on the storage capacitor Cst. The second interlayer insulating layer 207 may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0111] The semiconductor layer of the third thin-film transistor T3 (hereinafter referred to as the third semiconductor layer A3) may be disposed on the second interlayer insulating layer 207. The third semiconductor layer A3 may include an oxide semiconductor material. For example, the third semiconductor layer A3 may include zinc oxide materials such as zinc oxide, indium zinc oxide, indium gallium zinc oxide, etc. In some embodiments, the third semiconductor layer A3 may include an In-Ga-Zn-O (IGZO), In-Sn-Zn-O (ITZO), or In-Ga-Sn-Zn-O (IGTZO) semiconductor in which metals such as indium (In), gallium (Ga), and tin (Sn) are included in ZnO.

[0112] The third semiconductor layer A3 may have a channel region C3 and a first region B3 and a second region D3 disposed on the opposite side of the channel region C3. One of the first region B3 and the second region D3 may be a source region and the other may be a drain region.

[0113] The third thin-film transistor T3 may include a gate electrode (hereinafter referred to as the third gate electrode GE3) that overlaps with the channel region C3 of the third semiconductor layer A3. The third gate electrode GE3 may have a dual-gate structure including a lower gate electrode G3A disposed below the third semiconductor layer A3 and an upper gate electrode G3B disposed above the channel region C3.

[0114] The lower gate electrode G3A can be disposed on the same layer as the upper electrode CE2 of the storage capacitor Cst (e.g., on the first interlayer insulating layer 205). The lower gate electrode G3A can be made of the same material as the upper electrode CE2 of the storage capacitor Cst.

[0115] The upper gate electrode G3B may be disposed on the third semiconductor layer A3, and the second gate insulating layer 209 is located between the upper gate electrode G3B and the third semiconductor layer A3. The second gate insulating layer 209 may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0116] The third interlayer insulating layer 210 may be disposed on the upper gate electrode G3B. The third interlayer insulating layer 210 may include an inorganic insulating material such as silicon oxynitride, and may have a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0117] Figure 6 The above reference is illustrated in the diagram. Figure 4A The first thin-film transistor T1 and the third thin-film transistor T3 are described, and the first semiconductor layer A1 and the third semiconductor layer A3 are illustrated in different layers. Although not shown in Figure 6 The image in the middle is for reference only. Figure 4A The second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 described can be compared with the reference. Figure 6 The first thin-film transistor T1 described has the same structure. For example, the second thin-film transistor T2, the fifth thin-film transistor T5, the sixth thin-film transistor T6, and the seventh thin-film transistor T7 (see example...) Figure 4A The first thin-film transistor (TFT) may include a semiconductor layer disposed on the same layer (e.g., on buffer layer 201) as the first semiconductor layer A1 of the first TFT T1, and a gate electrode disposed on the same layer (e.g., on first gate insulating layer 203) as the first gate electrode GE1 of the first TFT T1. The second TFT T2, fifth TFT T5, sixth TFT T6, and seventh TFT T7 (see example...) Figure 4A The semiconductor layer of A1 can be integrally connected to the first semiconductor layer A1.

[0118] Figure 6The illustration shows an embodiment in which the first semiconductor layer A1 and the third semiconductor layer A3 are arranged in different layers, but this disclosure is not limited thereto. In another embodiment, when the first thin-film transistor T1 and the third thin-film transistor T3 are as follows... Figure 4B When using the same NMOS as shown, the first semiconductor layer A1 can be disposed on the same layer as the third semiconductor layer A3 (e.g., on the second interlayer insulating layer 207), and Figure 4B The semiconductor layer of the fifth thin-film transistor T5 shown can be disposed on the buffer layer 201 as a semiconductor layer including polysilicon. For ease of description, the following description describes an embodiment in which the first semiconductor layer A1 of the first thin-film transistor T1 includes polysilicon and the third semiconductor layer A3 of the third thin-film transistor T3 includes oxide semiconductor.

[0119] The first thin-film transistor T1 and the third thin-film transistor T3 can be electrically connected to each other via a node connection line 166. The node connection line 166 can be disposed on the third interlayer insulating layer 210. One side (or end) of the node connection line 166 can be connected to the first gate electrode GE1 of the first thin-film transistor T1, and the other side (or other end) of the node connection line 166 can be connected to the third semiconductor layer A3 of the third thin-film transistor T3.

[0120] The node connection line 166 may include aluminum (Al), copper (Cu), and / or titanium (Ti), and may have a single layer or multiple layers comprising the aforementioned materials. For example, the node connection line 166 may have a three-layer structure of titanium layer / aluminum layer / titanium layer.

[0121] The first organic insulating layer 211 may be disposed on the node connection line 166. The first organic insulating layer 211 may include an organic insulating material. The organic insulating material may include acrylic resin, benzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

[0122] The data line DL and the drive voltage line PL can be disposed on the first organic insulating layer 211 and can be covered by the second organic insulating layer 213. The data line DL and the drive voltage line PL can include aluminum (Al), copper (Cu), and / or titanium (Ti), and can have a single layer or multiple layers comprising the above materials. For example, the data line DL and the drive voltage line PL can have a three-layer structure of titanium layer / aluminum layer / titanium layer.

[0123] The second organic insulating layer 213 may include organic insulating materials such as acrylic resin, BCB, polyimide and / or HMDSO. Figure 6The illustration shows an embodiment in which the data line DL and the drive voltage line PL are formed on the first organic insulating layer 211, but this disclosure is not limited thereto. In another embodiment, the data line DL or the drive voltage line PL may be arranged on the same layer as the node connection line 166.

[0124] A light-emitting diode (e.g., an organic light-emitting diode OLED) can be disposed on the second organic insulating layer 213.

[0125] The pixel electrode 221 of an organic light-emitting diode (OLED) may include a reflective layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or mixtures thereof. In another embodiment, the pixel electrode 221 may further include a conductive oxide layer above and / or below the aforementioned reflective layer. The conductive oxide layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In an embodiment, the pixel electrode 221 may have a three-layer structure of ITO layer / Ag layer / ITO layer.

[0126] A dam layer 215 may be disposed on the pixel electrode 221. The dam layer 215 may have an opening that overlaps with the pixel electrode 221 and may cover the edge of the pixel electrode 221. The dam layer 215 may include an organic insulating material.

[0127] The intermediate layer 222 may include an emitting layer 222b. The intermediate layer 222 may include a first functional layer 222a disposed below the emitting layer 222b and / or a second functional layer 222c disposed above the emitting layer 222b. The emitting layer 222b may include a polymer or a low-molecular-weight organic material that emits light of a specific color. The first functional layer 222a may include a hole transport layer (HTL) and / or a hole injection layer (HIL). The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). Both the first functional layer 222a and the second functional layer 222c may include organic materials.

[0128] Counter electrode 223 may include a conductive material having a low work function. For example, counter electrode 223 may include a (semi-)transparent layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or alloys thereof. In another embodiment, counter electrode 223 may further include a layer such as ITO, IZO, ZnO, or In2O3 on a (semi-)transparent layer comprising the aforementioned material.

[0129] The emitting layer 222b may be formed in the display area DA to overlap with the pixel electrode 221 through an opening in the dam layer 215 (or in an opening in the dam layer 215). In some embodiments, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may extend to be located in the inner non-display area MA and the display area DA.

[0130] Spacer 217 may be formed on dam 215. Spacer 217 may be formed together with dam 215 in the same process, or it may be formed separately in a separate process. In embodiments, spacer 217 may comprise an organic insulating material such as polyimide.

[0131] An organic light-emitting diode (OLED) can be covered by an encapsulation layer 300. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. Figure 6 In the embodiment illustrated in the figure, the encapsulation layer 300 includes a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330.

[0132] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each comprise at least one inorganic material selected from the group consisting of alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may have a single-layer or multi-layer structure comprising the aforementioned materials. The organic encapsulation layer 320 may comprise a polymeric material. Polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene, etc. In an embodiment, the organic encapsulation layer 320 may comprise acrylates.

[0133] The thicknesses of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be different from each other. The thickness of the first inorganic encapsulation layer 310 may be greater than the thickness of the second inorganic encapsulation layer 330. In another embodiment, the thickness of the second inorganic encapsulation layer 330 may be greater than the thickness of the first inorganic encapsulation layer 310, or the thicknesses of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be the same as each other.

[0134] The display panel 10 may include a substrate 100, a circuit-diode layer 200 disposed on the substrate 100 and including pixel circuits and light-emitting diodes, and an image generation layer 20 including an encapsulation layer 300. (Refer to the above...) Figure 2 The input sensing layer 40 (see example) Figure 2 ) and optical functional layer 50 (see, for example) Figure 2 (e.g., can be further set on the image generation layer 20.)

[0135] refer to Figure 6 The internal non-display area MA shown in the figure may include the referenced above. Figure 5 The described data lines DL have winding sections DL-C1 and DL-C2 through the area they pass through.

[0136] The winding portions DL-C1 and DL-C2 of the data line DL can be arranged on different layers. One of the winding portions DL-C1 and DL-C2 of adjacent data lines DL can be arranged on the third interlayer insulation layer 210, and the other can be arranged on the first organic insulation layer 211.

[0137] When the winding portions DL-C1 and DL-C2 of the data line DL are arranged alternately and an insulating layer (e.g., a first planarization insulating layer such as the first organic insulating layer 211) is between them, the pitch Δd between the winding portions DL-C1 and DL-C2 of the data line DL can be reduced, and therefore its area in the internal non-display area MA can be effectively utilized.

[0138] Figure 7 It is along Figure 5 A cross-sectional view of the display panel 10 according to an embodiment, taken by line VII-VII'. (See reference...) Figure 5 and Figure 7 The display panel 10 may have an opening 10OP corresponding to the opening region OA, and the internal non-display region MA may include structures for preventing crack propagation and / or moisture penetration. The opening 10OP in the display panel 10 can be formed by penetrating several layers constituting the display panel 10. In this respect, Figure 7 The illustration shows an opening 100OP penetrating from a first surface (hereinafter, the upper surface) of substrate 100 to a second surface (hereinafter, the lower surface), an opening IL-OP penetrating from the upper surface of the inorganic insulating structure IL to the lower surface, and openings 310OP and 330OP respectively in the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. The inorganic insulating structure IL is a stacked structure comprising multiple inorganic insulating layers. As an example, such as Figure 7 As illustrated in the figure, the inorganic insulating structure IL may include a buffer layer 201, a first gate insulating layer 203, a first interlayer insulating layer 205, a second interlayer insulating layer 207, a second gate insulating layer 209, and a third interlayer insulating layer 210.

[0139] For ease of description, Figure 7 The diagram illustrates the stacked structure from substrate 100 to encapsulation layer 300. However, as referenced above... Figure 2The display panel 10 may further include an input sensing layer 40, an optical functional layer 50, and a cover window 60 on the encapsulation layer 300, and the input sensing layer 40 and the optical functional layer 50 may each have an opening corresponding to the opening region OA.

[0140] refer to Figure 5 and Figure 7 The trench TCH, the overhang structure OHS, and the first and second partition walls 510 and 520 can be arranged in the internal non-display area MA. The encapsulation layer 300 can extend to the internal non-display area MA and can overlap or cover the trench TCH, the overhang structure OHS, and the first and second partition walls 510 and 520.

[0141] The overhanging structures OHS can be arranged separately from each other in the internal non-display area MA. As an example, see reference... Figure 5 and Figure 7 A suspended structure OHS can be arranged between the first partition wall 510 and the display area DA (see example). Figure 5 Between the first partition wall 510 and the second partition wall 520, multiple hanging structures OHS (e.g., three hanging structures OHS) can be arranged between the second partition wall 520 and the opening 100OP in the substrate 100. In another embodiment, multiple hanging structures OHS can be arranged between the first partition wall 510 and the display area DA (see example...). Figure 5 Between the first partition wall 510 and the second partition wall 520. In another embodiment, two or more overhanging structures OHS may be arranged between the second partition wall 520 and the opening 100OP in the substrate 100. As another embodiment, one or more partition walls (hereinafter referred to as third partition walls) may be further arranged between the first partition wall 510 and the second partition wall 520, one or more overhanging structures OHS may be arranged between the first partition wall 510 and the third partition wall, and one or more overhanging structures OHS may be arranged between the third partition wall and the second partition wall 520. For ease of description, the following describes in more detail. Figure 7 The structure shown in the diagram.

[0142] like Figure 5As illustrated, each of the overhanging structures OHS can have a closed-loop shape surrounding the opening region OA (e.g., extending around the opening region OA). A planar element or structure "A" having a closed-loop shape surrounding the opening region OA can represent a planar element or structure "A" having a closed-loop shape surrounding the opening 100OP in the substrate 100. Therefore, a planar overhanging structure OHS that can have a closed-loop shape surrounding the opening region OA can represent planar overhanging structures OHS each having a closed-loop shape surrounding the opening 100OP in the substrate 100.

[0143] The overhanging structure OHS can be defined in a multilayer structure 1000 comprising a first layer 1100 and a second layer 1200 comprising different materials. The second layer 1200 can be located on the first layer 1100 and can have a thickness less than that of the first layer 1100. Each of the overhanging structures OHS can have a groove G defined in the first layer 1100 and an overhanging portion P suspended above the groove G to form an eaves structure. In an embodiment, each of the overhanging structures OHS can have, as shown in the example... Figure 7 The illustration shows a recess G defined in the first layer 1100 and two overhanging portions P extending toward each other over the recess G. In some embodiments, the multilayer structure 1000 may be separated from each other in the inner non-display area MA. (Reference) Figure 5 and Figure 7 Each of the multi-layer structure 1000 may have a closed loop shape in a plane (e.g., in a plan view) around an opening region OA (e.g., extending around the opening region OA).

[0144] The first layer 1100 may include an insulating material. In an embodiment, the first layer 1100 may include an organic insulating material. For example, the material of the first layer 1100 may be similar to that of a reference material. Figure 6 The first organic insulating layer 211 described is made of the same material. The groove G is a recessed portion along the thickness direction of the first layer 1100 (e.g., a portion where the thickness of the first layer 1100 decreases), and the depth of the groove G is less than the thickness of the first layer 1100.

[0145] The first layer 1100 can be arranged separately (or spaced apart) from each other in the internal non-display area MA. In a manner similar to the overhang structure OHS, the first layer 1100 can have a closed-loop shape in the plane surrounding the opening area OA and / or the opening 100OP in the substrate 100.

[0146] The second layer 1200 may include a conductive material. In an embodiment, the second layer 1200 may include a metal layer comprising a metallic material such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti). The second layer 1200 may have a single-layer or multi-layer structure comprising the above-mentioned materials. As an embodiment, the second layer 1200 may have a three-layer stacked structure of titanium layer / aluminum layer / titanium layer. For example, the second layer 1200 may be related to the above reference. Figure 6 The described data line DL and / or drive voltage line PL are formed in the same process and may include the same material as the data line DL and / or drive voltage line PL.

[0147] Two second layers 1200 can be arranged on either side of the groove G. The overhanging portion P of each of the two second layers 1200 can protrude from each other over the groove G to form an eaves shape. For example, two overhanging portions P arranged on opposite sides of the groove G can extend toward each other while maintaining the gap between them.

[0148] A second layer 1200 disposed on one first layer 1100 may be integrally connected to a second layer 1200 disposed on another adjacent first layer 1100. For example, a second layer 1200 may extend over two adjacent first layers 1100 and may have an overhang portion P extending over a groove G in each of the two first layers 1100. As described above, the second layer 1200 may contact the upper surface of the uppermost layer of the inorganic insulating structure IL exposed between the two adjacent first layers 1100 (e.g., an inorganic insulating layer directly below the first layer 1100).

[0149] A protective layer 1115 may be located on and protect the overhanging portion P. The protective layer 1115 may be located on the upper and side surfaces of each overhanging portion P. The protective layer 1115 may include a conductive material. In an embodiment, the protective layer 1115 may be referenced above... Figure 6 The pixel electrode 221 described includes the same material. The protective layer 1115 may have a three-layer structure of ITO layer / Ag layer / ITO layer. In the process of forming the protective layer 1115, a layer of the same material as the protective layer 1115 (hereinafter referred to as the protective material layer 1116) may be applied to the bottom surface of the groove G.

[0150] Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be shared in multiple light-emitting diode OLEDs. (See example...) Figure 6In the layers of the display panel 10, layers including organic materials (e.g., first functional layer 222a and / or second functional layer 222c) can be formed in the inner non-display area MA and the display area DA. In a comparative example, if they are formed continuously in the non-display area MA, the first functional layer 222a and the second functional layer 222c can provide a moisture permeation path for moisture to flow in through the opening 10OP in the display panel 10, and the organic light-emitting diode OLED (see, for example) Figure 6 It may be damaged by moisture.

[0151] However, according to embodiments of this disclosure, the first functional layer 222a and / or the second functional layer 222c, comprising organic materials, included in the layers of the light-emitting diode, are separated into multiple portions by a hanging structure OHS in the inner non-display region MA. Accordingly, the path of moisture inflow through the opening region OA is blocked, thereby preventing damage to the organic light-emitting diode OLED (see, for example...). Figure 6 Damage to the electrode 223. Similarly, the counter electrode 223 can also be separated into multiple parts by the overhanging structure OHS within the internal non-display area MA. In this respect, Figure 7 The illustration shows an embodiment in which the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are each separated into multiple parts in the internal non-display area MA. The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be separated into a portion disposed on the overhang portion P and a portion disposed on the bottom surface of the groove G, respectively.

[0152] The internal non-display area MA may have a trench area TRA relatively close to the opening area OA. The trench area TRA is the area where a trench TCH defined in the inorganic insulating structure IL is disposed, and the trench TCH may have a recessed shape in the thickness direction of the inorganic insulating structure IL. Because the display panel 10 includes the trench TCH defined in the inorganic insulating structure IL, it is possible to prevent the propagation of impacts that may occur during the manufacturing process of the display panel 10 (e.g., impacts that occur during the process of forming the opening 10OP in the display panel 10) and cracks caused by impacts on the display area DA.

[0153] The trench TCH can be located between the partition wall closest to the opening region OA and the opening region OA. In this respect, Figure 7 The illustration shows an embodiment where the trench TCH is located between the second partition wall 520 and the opening region OA. The width of the trench TCH can be greater than the width of the groove G in the first layer 1100. The depth of the trench TCH can be less than the sum of the thicknesses of the plurality of inorganic insulating layers of the inorganic insulating structure IL. In some embodiments, such as Figure 7As illustrated, the trench TCH passes through the upper and lower surfaces of the third interlayer insulating layer 210, the upper and lower surfaces of the second gate insulating layer 209, and the upper surface of the second interlayer insulating layer 207, but this disclosure is not limited thereto.

[0154] One of the overhang structures OHS can overlap with the trench TCH. For example, in the overhang structures OHS, the overhang structure OHS located closest to the opening region OA can overlap with the trench TCH.

[0155] In some embodiments, the first layer 1100 may be disposed on one of the peripheral portions of the opposite side of the trench TCH. The trench TCH may include a first edge portion relatively close to the opening region OA and a second edge portion opposite to the first edge portion, and the first layer 1100 may be disposed on the second edge portion of the two edge portions of the trench TCH relatively far from the opening region OA. The first layer 1100 may cover the step at the second edge portion on one side of the trench TCH.

[0156] The second layer 1200 on the first layer 1100 overlapping the groove TCH may include an overhanging portion P extending toward the groove G, and a portion of the second layer 1200 opposite to the overhanging portion P may extend over the side surface of the first layer 1100 and into the bottom surface of the groove TCH. This portion of the second layer 1200 may be in direct contact with the bottom surface of the groove TCH.

[0157] Encapsulation layer 300 can extend to the internal non-display area MA and the display area DA (see example). Figure 5 The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can be disposed on the trench TCH, the overhang structure OHS, the first partition wall 510, and the second partition wall 520, respectively. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can each extend through the trench region TRA toward the opening region OA. The first inorganic encapsulation layer 310 can continuously cover the upper surface, side surface, and bottom surface of the overhang portion P, as well as the inner surface of the defining groove G of the first layer 1100.

[0158] During the formation of the organic encapsulation layer 320, the spacers control the flow of monomers, and the organic encapsulation layer 320 can be coupled with some of the overhanging structure OHS (e.g., one of the spacers is coupled with the display area DA (see example)). Figure 5 The overhanging structures (OHS) overlap between the two. Figure 7 The embodiment illustrated in the middle includes a first partition wall 510 and a display area DA (see example...). Figure 5 The organic encapsulation layer 320 is an overhanging structure OHS overlapping between the two.

[0159] The first partition wall 510 and the display area DA (see example) Figure 5 The overhanging structure OHS between the two layers can overlap with the first inorganic encapsulation layer 310, the organic encapsulation layer 320, and the second inorganic encapsulation layer 330.

[0160] The second inorganic encapsulation layer 330 can directly contact the first inorganic encapsulation layer 310 in some areas of the internal non-display area MA. For example, the second inorganic encapsulation layer 330 can directly contact the first inorganic encapsulation layer 310 between the partition wall and the opening area OA. Figure 7 In the embodiment illustrated in the figure, a portion of the second inorganic encapsulation layer 330 may directly contact a portion of the first inorganic encapsulation layer 310 over the overhang structure OHS between the first partition wall 510 and the second partition wall 520, and over the overhang structure OHS and the trench TCH between the second partition wall 520 and the opening region OA. The second inorganic encapsulation layer 330 and the first inorganic encapsulation layer 310 may also directly contact each other on the partition walls. For example, a portion of the second inorganic encapsulation layer 330 on the first partition wall 510 and the second partition wall 520 may directly contact a portion of the first inorganic encapsulation layer 310.

[0161] The first partition wall 510 and the second partition wall 520 may each be located between adjacent overhanging structures OHS. The first partition wall 510 may cover the ends of each of the second layers 1200 disposed on opposite sides of the first partition wall 510, and may extend over the upper surface of the inorganic insulating structure IL and the ends of the protective layers 1115 disposed on each of the second layers 1200. The second partition wall 520 may cover the ends of each of the second layers 1200 disposed on opposite sides of the second partition wall 520, and extend over the upper surface of the inorganic insulating structure IL and the ends of the protective layers 1115 disposed on each of the second layers 1200. Each of the first partition wall 510 and the second partition wall 520 may have a closed curve shape in a plane surrounding the opening region OA. In an embodiment, the width of the first partition wall 510 may be greater than the width of the second partition wall 520.

[0162] Figure 8 This is a cross-sectional view of a portion of the display panel 10 according to an embodiment, and is Figure 7 A magnified view of section VIII in the image. Figure 9 This is a cross-sectional view of a portion of a display panel 10 according to another embodiment, and can be compared with... Figure 7 The enlarged view corresponds to section VIII in the text. Figure 8 and Figure 9 The overhanging structure OHS shown in the diagram is located between adjacent partition walls (e.g., between the first partition wall 510 and the second partition wall 520, see example). Figure 7 The overhanging structure OHS between ) )

[0163] refer to Figure 8 and Figure 9 The overhanging structure OHS can be located on the inorganic insulating structure IL. The overhanging structure OHS can be defined in a multilayer structure 1000, and the multilayer structure 1000 can include a first layer 1100 and a second layer 1200 comprising different materials and having different thicknesses. The first layer 1100 can include an insulating material, and the second layer 1200 can include a conductive material. In embodiments, the first layer 1100 can include an organic insulating material such as acrylic resin, BCB, polyimide, or HMDSO, and can be formed as a single layer or multiple layers comprising the aforementioned materials. The second layer 1200 can include aluminum (Al), copper (Cu), and / or titanium (Ti), and can be formed as a single layer or multiple layers comprising the aforementioned materials.

[0164] The first layer 1100 may be disposed on the uppermost layer of the inorganic insulating structure IL (e.g., the third interlayer insulation layer 210). The first layer 1100 may have a lower surface 1100b in contact with the upper surface of the third interlayer insulation layer 210, an inner surface 1100i defining the groove G, a side surface 1100s tapering in a forward direction relative to the upper surface of the third interlayer insulation layer 210 (e.g., tapering inward or toward its center), and an upper surface 1100u extending between the side surface 1100s and the inner surface 1100i.

[0165] The upper surface 1100u of the first layer 1100 can slope downwards from the outside towards the inside at the location where the groove G is positioned. Correspondingly, the first vertical distance H1 from the upper surface of the inorganic insulating structure IL to the point where the side surfaces 1100s and the upper surface 1100u of the first layer 1100 intersect can be greater than the second vertical distance H2 from the upper surface of the inorganic insulating structure IL to the point where the inner surface 1100i of the first layer 1100 and the bottom surface of the second layer 1200 intersect. Because the depth of the groove G is less than the thickness of the first layer 1100, the third vertical distance H3 from the upper surface of the inorganic insulating structure IL to the portion corresponding to the center of the groove G is less than the second vertical distance H2.

[0166] Two second layers 1200 can be arranged on either side of the groove G of the first layer 1100. The second layers 1200 arranged on opposite sides of the groove G can each include an overhang portion P suspended on the groove G.

[0167] The second layer 1200 located on one side of the groove G (e.g., the left side) may include an overhanging portion P extending toward (or overhanging) the groove G from the point where the lower surface of the second layer 1200 and the inner surface 1100i of the first layer 1100 intersect each other. Similarly, the second layer 1200 located on the other side of the groove G (e.g., the right side) may include an overhanging portion P extending toward (or overhanging) the groove G from the point where the lower surface of the second layer 1200 and the inner surface 1100i of the first layer 1100 intersect each other. The length L of the overhanging portion P (e.g., the length L from the point where the lower surface of the second layer 1200 and the inner surface 1100i of the first layer 1100 intersect each other to the edge (e.g., side) of the overhanging portion P may be in the range of about 0.2 micrometers to about 0.4 micrometers (0.2 μm ≤ L ≤ 0.4 μm).

[0168] The two second layers 1200 can each extend beyond the two side surfaces 1100s of the first layer 1100 to the upper surface of the inorganic insulating structure IL. Each second layer 1200 can be in direct contact with the side surfaces 1100s of the first layer 1100 and the upper surface of the inorganic insulating structure IL.

[0169] The upper surface Pu of the overhanging portion P can be located on an imaginary plane IPL parallel to the upper surface 100u of the substrate 100 or on a plane different from the imaginary plane IPL. The first angle θ between the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 and the upper surface Pu of each overhanging portion P can be in the range of approximately 0 degrees to approximately 40 degrees (0°≤θ≤40°).

[0170] In an embodiment, each second layer 1200 may be inclined downward toward the groove G. For example, the first angle θ between the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 and the upper surface Pu of each overhanging portion P may be in the range of approximately 0 degrees to approximately 40 degrees (0° < θ ≤ 40°). For example, as Figure 8 As illustrated in the figure, the first angle θ can be in the range of approximately 0 degrees to approximately 30 degrees (0° < θ ≤ 30°).

[0171] In another embodiment, such as Figure 9 As shown, the first angle θ can be approximately 0 degrees. For example, the upper surface Pu of the overhanging portion P can be arranged on an imaginary plane IPL parallel to the upper surface 100u of the substrate 100.

[0172] As described above, when the first angle θ is in the range of approximately 0 degrees to approximately 40 degrees (0° < θ ≤ 40°), the overhang portion P may not lift off the first layer 1100 and may separate from the first layer 1100. By preventing the overhang portion P from lifting off, the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be prevented from detaching.

[0173] A protective layer 1115 may be disposed on the second layer 1200. The protective layer 1115 may be disposed on and in direct contact with the overhang portion P. The protective layer 1115 may be located on the upper surface Pu and side surfaces Ps of the overhang portion P. The protective layer 1115 may extend to overlap with the side surfaces 1100s of the first layer 1100 and the upper surface of the inorganic insulating structure IL. The protective layer 1115 may prevent the length of the overhang portion P (e.g., eaves length) from intersecting with the display panel 10 (see example...). Figure 7 The manufacturing process of ) is shortened due to damage to the overhanging part P.

[0174] The protective layer 1115 may include, for example, the pixel electrode 221 (see example...) Figure 6 The same conductive material. The protective layer 1115 can be formed by a deposition process, and the material forming the protective layer 1115 can also be deposited inside the groove G, and as... Figure 8 and Figure 9 As shown, the same protective material layer 1116 as the protective layer 1115 can be on the bottom surface of the groove G.

[0175] As referenced above Figure 7 As described, the organic layers included in the organic light-emitting diode, such as the first functional layer 222a and the second functional layer 222c, can be separated into multiple parts by the overhanging structure OHS. For example... Figure 8 and Figure 9 As illustrated, each of the first functional layer 222a and the second functional layer 222c may include a portion disposed on the overhang portion P and a portion disposed inside the groove G. A portion of each of the first functional layer 222a and the second functional layer 222c may be disposed on the protective layer 1115 on the overhang portion P, and another portion of each of the first functional layer 222a and the second functional layer 222c may be disposed on the protective material layer 1116 disposed on the bottom surface of the groove G.

[0176] Similarly, the counter electrode 223 can also be separated into multiple parts. For example... Figure 8 and Figure 9As illustrated, the counter electrode 223 may include a portion disposed on the overhang portion P and a portion disposed in the groove G. A portion of the counter electrode 223 may be disposed on a portion of each of the first functional layer 222a and the second functional layer 222c on the overhang portion P, and another portion of the counter electrode 223 may be disposed on another portion of each of the first functional layer 222a and the second functional layer 222c disposed on the bottom surface of the groove G.

[0177] Because the first inorganic encapsulation layer 310 has excellent step coverage, therefore... Figure 8 and Figure 9 As illustrated, the first inorganic encapsulation layer 310 can extend continuously without being separated from the overhang structure OHS. For example, the first inorganic encapsulation layer 310 can extend continuously to overlap with the upper surface Pu, side surface Ps, and bottom surface Pb of the overhang portion P. In some embodiments, the upper surfaces of the first inorganic encapsulation layer 310 can contact each other between adjacent overhang portions P. In such embodiments, as Figure 8 The cross-section shown in the figure may indicate the presence of a cavity (CV). In another embodiment, as illustrated... Figure 9 As illustrated in the figure, depending on the thickness of the first inorganic encapsulation layer 310 and / or the gap between the overhang portions P, the cavity CV may not exist.

[0178] The second inorganic encapsulation layer 330 can also have excellent step coverage and can extend continuously without being separated by the overhanging structure OHS. For example... Figure 8 and Figure 9 As shown in the diagram, the second inorganic encapsulation layer 330 can... Figure 7 Some of the overhanging structures in the diagram are in direct contact with the first inorganic encapsulation layer 310.

[0179] Figure 10A This is a cross-sectional view of a portion of the display panel 10 according to an embodiment and is Figure 8 A magnified view of area XA in the middle, and Figure 10B This is a cross-sectional view of a portion of the display panel 10 according to another embodiment and is consistent with... Figure 10A The example corresponds to the modification.

[0180] refer to Figure 10A and Figure 10B The second layer 1200 may include first sublayers to third sublayers 1201, 1202 and 1203 containing different materials. For example, among the sublayers of the second layer 1200, the first sublayer 1201 may include a titanium layer, the second sublayer 1202 may include an aluminum layer and the third sublayer 1203 may include a titanium layer.

[0181] In the embodiment, reference Figure 10AThe protective layer 1115 can extend continuously from the upper surface Pu of the overhanging portion P toward the side surface Ps to cover the side surface Ps of the overhanging portion P of the second layer 1200 (e.g., the respective side surfaces of the first to third sub-layers 1201, 1202, 1203).

[0182] In another embodiment, because the etch selectivity of the first to third sublayers 1201, 1202, and 1203 is different from each other, therefore... Figure 10B As illustrated in the figure, during the formation process of the second layer 1200, unevenness may be formed on the side surface Ps of the overhang portion P. Due to the unevenness, the portion of the protective layer 1115 formed on the second layer 1200 (e.g., the portion located on the upper surface Pu of the overhang portion P) and a portion of the protective layer 1115 (e.g., the portion located on the side surface Ps of the overhang portion P) may be discontinuous.

[0183] Figure 11 This is a cross-sectional view of a portion of the display panel 10 according to an embodiment, and is Figure 7 An enlarged view of area XI in the image. Figure 11 The overhanging structure OHS illustrated in the middle shows the structure located closest to the display area DA (see example). Figure 5 The first partition wall 510 (see example) Figure 7 ) and display area DA (see example) Figure 5 The overhanging structure OHS between )

[0184] refer to Figure 11 Located in the first partition wall 510 (see example) Figure 7 ) and display area DA (see example) Figure 5 The overhang structure OHS between the two can be referenced above. Figure 8 The described structures have the same structure. The overhang structure OHS may include an overhang portion P suspended above the groove G of the first layer 1100.

[0185] In this embodiment, the upper surface 1100u of the first layer 1100 may extend toward the groove G, but may slope downwards. Accordingly, the first vertical distance H1 from the upper surface of the inorganic insulating structure IL to the point where the side surfaces 1100s and the upper surface 1100u of the first layer 1100 intersect each other may be greater than the second vertical distance H2 from the upper surface of the inorganic insulating structure IL to the point where the inner surface 1100i of the first layer 1100 and the bottom surface of the second layer 1200 intersect each other. Because the depth of the groove G is less than the thickness of the first layer 1100, the third vertical distance H3 from the upper surface of the inorganic insulating structure IL to the portion corresponding to the center of the groove G is less than the second vertical distance H2.

[0186] As referenced above Figure 8and Figure 9 The first angle θ between the upper surface Pu of the overhanging portion P of the second layer 1200 arranged on the first layer 1100 and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 can be in the range of approximately 0 degrees to approximately 40 degrees (0°≤θ≤40°). In an embodiment, the first angle θ between the imaginary plane IPL and the upper surface Pu of each overhanging portion P can be in the range of 0°≤θ≤30°.

[0187] Two second layers 1200 may be arranged on either side of the recess G of the first layer 1100. Each of the two second layers 1200 may include an overhanging portion P extending toward the recess G (e.g., over the recess G) from the point where the lower surface of the second layer 1200 and the inner surface 1100i of the first layer 1100 intersect each other. The length of the overhanging portion P may be in the range of approximately 0.2 micrometers to approximately 0.4 micrometers.

[0188] The protective layer 1115 can be disposed on the overhang portion P and can be in direct contact with the overhang portion P. The protective layer 1115 can be located on the upper surface Pu and the side surface Ps of the overhang portion P. The protective layer 1115 can extend to overlap with the side surface 1100s of the first layer 1100 and the upper surface of the inorganic insulating structure IL. The protective material layer 1116 comprises the same material as the protective layer 1115 and can be on the bottom surface of the groove G.

[0189] As referenced above Figure 7 As described, the organic layers included in the organic light-emitting diode, such as the first functional layer 222a and the second functional layer 222c, can be separated into multiple parts by the overhanging structure OHS. For example... Figure 8 and Figure 9 As illustrated, each of the first functional layer 222a and the second functional layer 222c may include a portion disposed on the overhang portion P and a portion disposed in the groove G. Similarly, the counter electrode 223 may also be separated into multiple portions.

[0190] The protective layer 1115, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 on the suspended portion P can be arranged on the upper surface Pu and the side surface Ps of the suspended portion P, and can be referenced as above. Figure 10A The description is continuous or as referenced. Figure 10B The above is discontinuous.

[0191] Because the first inorganic encapsulation layer 310 has excellent step coverage, therefore... Figure 11As illustrated, the first inorganic encapsulation layer 310 can extend continuously without being separated by the overhanging structure OHS. The organic encapsulation layer 320 can be disposed on the first inorganic encapsulation layer 310, within the non-display area MA, but as shown in the diagram... Figure 11 As shown in the diagram, it can overlap with the overhanging structure OHS.

[0192] Figure 12 This is a cross-sectional view of a portion of a display panel 10 according to another embodiment. Figure 12 Can be with Figure 7 The enlarged view of area XI corresponds to this. Except for the upper surface 1100u of the first layer 1100, which is essentially nonexistent (or essentially omitted), according to... Figure 12 The structure of the embodiment shown in the figure is the same as that described above. Figure 11 The structures of the described embodiments are substantially the same.

[0193] refer to Figure 12 The side surface 1100s of the first layer 1100 and the inner surface 1100i defining the groove G can intersect each other. The second layer 1200 can be disposed on the first layer 1100. (Refer to the above.) Figure 8 and Figure 9 The first angle θ between the upper surface Pu of the overhanging portion P of the second layer 1200 and the imaginary plane IPL parallel to the upper surface 100u of the substrate 100 can be in the range of approximately 0 degrees to approximately 40 degrees (0°≤θ≤40°). In some embodiments, the first angle θ can be in the range of 0°≤θ≤30°.

[0194] The protective layer 1115, the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are as described above. Figure 11 The first inorganic encapsulation layer 310 can extend continuously without being separated by the overhanging structure OHS. The organic encapsulation layer 320 can be arranged on the first inorganic encapsulation layer 310, within the internal non-display area MA, but as described above. Figure 11 As illustrated in the diagram, it can overlap with the overhanging OHS structure. Figure 12 For simplicity, features shown in the diagram above have been omitted from the references. Figure 11 Descriptions of those features that are the same or substantially similar.

[0195] Figure 13 This is a cross-sectional view of a portion of the display panel 10 according to an embodiment, and is Figure 7 A magnified view of section XIII in the image.

[0196] refer to Figure 13 A groove TCH with a recessed (e.g., indented) shape relative to the upper surface ILu of the inorganic insulating structure IL can be arranged in the internal non-display area MA. (See above reference.) Figure 7 The trench region TRA, in which the trench TCH is arranged as part of the internal non-display region MA, can be arranged close to the opening region OA. The trench TCH can have a closed-loop shape that completely surrounds the opening region OA in the plane.

[0197] The depth D of the trench TCH can be less than the sum T of the thicknesses of the multiple inorganic insulating layers in the inorganic insulating structure IL. Figure 13 In the embodiment illustrated, the trench TCH passes through the upper and lower surfaces of the third interlayer insulating layer 210, the upper and lower surfaces of the second gate insulating layer 209, and the upper surface of the second interlayer insulating layer 207 in the depth direction, and the bottom surface of the trench TCH is located between the upper and lower surfaces of the second interlayer insulating layer 207. However, this disclosure is not limited thereto. In another embodiment, when the depth D of the trench TCH is less than the sum T of the thicknesses of the plurality of inorganic insulating layers of the inorganic insulating structure IL, the trench TCH can be formed by removing a plurality of layers selected from those included in the inorganic insulating structure IL.

[0198] The first layer 1100 can be arranged to overlap with the trench TCH. The trench TCH can have a first edge portion and a second edge portion respectively arranged on opposite sides with respect to an imaginary line TCL passing through the center of the trench TCH in the width direction. The first edge portion (e.g., Figure 13 The left edge portion of the middle) can be relatively close to the opening region OA, and the second edge portion (e.g., Figure 13 The right edge portion of the image can be relatively close to the display area DA (see example). Figure 5 The first layer 1100 can be positioned opposite the first edge portion as a first edge portion. The first layer 1100 may be positioned relative to the display area DA of the trench TCH (see example...). Figure 5 The second edge of the ) overlaps.

[0199] The first layer 1100 may cover the step of the second edge portion (e.g., the step formed by the inner surface ILi and the upper surface ILu of the defining trench TCH of the inorganic insulating structure IL). The first layer 1100 may overlap with the point where the inner surface ILi and the upper surface ILu of the defining trench TCH of the inorganic insulating structure IL intersect each other. The groove G in the first layer 1100 may overlap with an edge portion of the trench TCH (e.g., Figure 13 The right edge of the middle part overlaps.

[0200] Two second layers 1200 may be arranged on the first layer 1100 and on opposite sides of the groove G of the first layer 1100. Each of the two second layers 1200 may have an overhanging portion P extending toward (or over the groove G) from the point where the lower surface of the second layer 1200 and the inner surface 1100i of the defining groove G of the first layer 1100 intersect each other. The length of the overhanging portion P may be in the range of approximately 0.2 micrometers to approximately 0.4 micrometers.

[0201] In an embodiment, the upper surface of the first layer 1100 may be inclined downward toward the groove G. For example, the first vertical distance H1' from the bottom surface of the groove TCH to the point where the side surfaces 1100s and the upper surface 1100u of the first layer 1100 intersect each other may be greater than the second vertical distance H2' from the bottom surface of the groove TCH to the point where the inner surface 1100i of the first layer 1100 and the bottom surface of the second layer 1200 intersect each other.

[0202] The overhanging portion P of the second layer 1200 can extend toward the groove G and can slope downwards, as shown in the reference above. Figure 8 and Figure 9 The upper surface of the overhanging portion P is substantially parallel to the upper surface of the substrate 100 or has an angle (e.g., a non-zero angle) relative to an imaginary plane parallel to the upper surface 100u of the substrate 100. Figure 13 In the embodiment illustrated in the figure, the overhanging portion P of the second layer 1200 extends toward the groove G, but slopes downward.

[0203] At least one of the overhanging portions P may overlap with the groove TCH. In an embodiment, it is arranged on one side of the groove G (e.g., Figure 13 The overhanging portion P on the left side of the groove G can overlap with the groove TCH and is provided on the other side of the groove G (e.g., Figure 13 The overhang P on the right side of the groove G in the groove may not overlap with the groove TCH. For example, the overhang P is located on the other side of the groove G (e.g., Figure 13 The edge of the groove G on the right side may not extend toward the groove G across the imaginary line IVL passing through the point where the inner surface ILi and the upper surface ILu of the inorganic insulating structure IL intersect each other. Arranged on the other side of the groove G (e.g., Figure 13 The overhanging portion P on the right side of the groove G in the middle can overlap with the upper surface ILu of the inorganic insulating structure IL.

[0204] Any one of the second layer 1200 arranged on the opposite side of the groove G (e.g., arranged in Figure 13The second layer 1200 on the left side of the groove G may include a portion located on the opposite side of the overhang portion P and extending toward the groove TCH. This portion may be in direct contact with the bottom surface of the groove TCH. Another portion of the second layer 1200 arranged on the opposite side of the groove G (e.g., arranged in...) Figure 13 A portion of the second layer (1200) on the right side of the groove G in the middle can directly contact the upper surface ILu of the inorganic insulating structure IL.

[0205] A protective layer 1115 may be disposed on the second layer 1200 to cover each overhang portion P. A portion of the protective layer 1115 disposed on the second layer 1200, which is arranged to overlap with the groove TCH, may be disposed on the upper and side surfaces of the overhang portion P, and another portion of the protective layer 1115 may extend further beyond the edge of the second layer 1200 to the bottom surface of the groove TCH and may be in direct contact with the bottom surface of the groove TCH. Accordingly, the side surfaces of the second layer 1200, which are positioned opposite to the overhang portion P, may overlap with (e.g., may be covered by) the protective layer 1115. When the protective layer 1115 is formed, a protective material layer 1116 may be disposed on the bottom surface of the groove G. The protective layer 1115 and the protective material layer 1116 may be separated from each other through the overhang portion P and may comprise the same material.

[0206] The first functional layer 222a and the second functional layer 222c can each be deposited in the internal non-display area MA, and each of the first functional layer 222a and the second functional layer 222c can be separated into multiple parts by the overhang portion P. For example... Figure 13 As illustrated, a portion of each of the first functional layer 222a and the second functional layer 222c may be disposed on the protective layer 1115 above each overhanging portion P, and another portion may be disposed on the protective material layer 1116 disposed on the bottom surface of the groove G. Arranged on one side of the groove G (e.g., Figure 13 A portion of the first functional layer 222a (on the left side of the groove G) can be in direct contact with the bottom surface of the groove TCH.

[0207] Because the first inorganic encapsulation layer 310 has excellent step coverage, therefore... Figure 8 and Figure 9 As illustrated in the figure, the first inorganic encapsulation layer 310 can extend continuously without being separated by the overhanging structure OHS.

[0208] According to the embodiments, such as Figure 13 As illustrated, because the display panel 10 has a trench TCH, it is possible to prevent the opening area OA (see example) from being formed during the manufacturing process of the display panel 10. Figure 7 Cracks appearing around the display area DA (see example) Figure 7The grooved TCH structure can prevent or minimize crack propagation. Furthermore, the second layer 1200 and / or the first layer 1100 overlapping the grooved TCH can absorb impact or minimize crack propagation toward the display area DA (see example). Figure 7 The crack propagates.

[0209] Figure 14 This is a cross-sectional view of a portion of a display panel 10 according to another embodiment. Figure 14 Can be with Figure 7 The magnified view corresponds to section XIII in the text.

[0210] In addition to the structure of the overhang portion P arranged on the right side of the groove G, according to Figure 14 The structure and reference of the embodiments shown in the figure Figure 13 The described embodiments are essentially the same. (See reference...) Figure 7 and Figure 14 In the overhang portion P on the trench TCH, relatively close to the display area DA (see example...) Figure 7 The overhanging portion P of the inorganic insulating structure IL can extend toward the groove G via an imaginary line IVL passing through the point where the inner surface ILi and the upper surface ILu of the inorganic insulating structure IL intersect each other. Other features and references besides the above-described structure Figure 13 The described features are the same or substantially similar, and therefore, repeated descriptions are omitted.

[0211] Figure 15 This is a cross-sectional view of a portion of a display panel 10 according to another embodiment. Figure 15 Can be with Figure 7 The magnified view corresponds to section XIII in the text.

[0212] In addition to the structure of the first layer 1100, according to Figure 15 The structure and reference of the embodiments shown in the figure Figure 13 The described embodiments are essentially the same. Figure 13 In the embodiment shown, the inner surface 1100i of the defining groove G of the first layer 1100 is located at the point where the inner surface ILi and the upper surface ILi of the inorganic insulating structure IL intersect each other, but this disclosure is not limited thereto. In another embodiment, as Figure 15 As illustrated, the point where the inner surface ILi and the upper surface ILi of the inorganic insulating structure IL intersect each other can be located on the same surface as the inner surface 1100i of the first layer 1100. In some embodiments, the first layer 1100 can be divided into two parts relative to the aforementioned point. Other features and references besides the above-described structure Figure 13 The described features are the same or substantially similar, and therefore, repeated descriptions are omitted.

[0213] Figures 16A to 16G This is a cross-sectional view of the internal non-display area MA, illustrating the steps of the manufacturing process of the display panel 10 according to an embodiment.

[0214] refer to Figure 16A An inorganic insulating structure IL is formed on the substrate 100. The inorganic insulating structure IL may include a buffer layer 201, a first gate insulating layer 203, a first interlayer insulating layer 205, and a second interlayer insulating layer 207. The inorganic insulating structure IL may be formed in the display area DA (see example...). Figure 5 ), within the internal non-display area MA and the opening area OA.

[0215] A portion of the inorganic insulating structure IL is removed to form a trench TCH in the inner non-display area MA. The trench region TRA where the trench TCH is disposed corresponds to the portion of the inner non-display area MA adjacent to the opening area OA. The depth of the trench TCH can be less than the sum of the thicknesses of the multiple inorganic insulating layers of the inorganic insulating structure IL. The trench TCH can completely surround the opening area OA in a plane.

[0216] refer to Figure 16B Multiple overhanging structures OHS are formed in the internal non-display area MA. The overhanging structures OHS can be formed in a multilayer structure 1000 including a first layer 1100 and a second layer 1200.

[0217] The first layers 1100 may be spaced apart from each other in the internal non-display area MA. Each of the first layers 1100 may have a recess G, and a second layer 1200 including a hanging portion P overhanging above the recess G may be arranged on the opposite side relative to the recess G. The second layer 1200 may pass through the side surface of the first layers 1100 and may directly contact the upper surface of the inorganic insulating structure IL (e.g., the upper surface of the third interlayer insulating layer 210).

[0218] The first layer 1100, overlapping the trench TCH, can be offset from an imaginary line passing through the center of the trench TCH to overlap with an edge portion of the trench TCH. The first layer 1100, the second layer 1200, and the overhang structure OHS on the trench TCH can be referenced above. Figures 13 to 15 The described embodiments are the same.

[0219] refer to Figure 16C A protective layer 1115 can be formed on the overhang portion P. The protective layer 1115 can be formed during the process of forming the pixel electrode 221. The protective layer 1115 and the pixel electrode 221 can comprise the same material. The material forming the protective layer 1115 can be deposited in the inner non-display area MA, and therefore, a protective material layer 1116, separated from the protective layer 1115 by the overhang portion P and comprising the same material as the protective layer 1115, can be formed in the groove G.

[0220] In the protective layer 1115, the protective layer 1115 located in the trench region TRA can extend beyond the edge of the second layer 1200 located in the trench region TRA to directly contact the bottom surface of the trench TCH.

[0221] refer to Figure 16D The first partition wall 510 and the second partition wall 520, which are spaced apart from each other, can be formed in the internal non-display area MA. Although Figure 16D The illustration shows an embodiment that includes two partition walls (first partition wall 510 and second partition wall 520), but in other embodiments, the internal non-display area MA may further include one or more partition walls between the first partition wall 510 and the second partition wall 520.

[0222] The first partition wall 510 and the second partition wall 520 can each completely surround the opening area OA in the plane. The first partition wall 510 can be relatively close to the display area DA (see example). Figure 5 Furthermore, the second partition wall 520 can be relatively close to the opening area OA.

[0223] The first partition wall 510 is located between the two overhanging structures OHS, but may overlap (or cover) the end of the second layer 1200. The first partition wall 510 may overlap (or cover) the end of the protective layer 1115 on the second layer 1200.

[0224] The second partition wall 520 may be located between the two overhanging structures OHS and may overlap with or cover the end of the second layer 1200. The second partition wall 520 may overlap with (or cover) the end of the protective layer 1115 on the second layer 1200.

[0225] The width of the second partition wall 520 may be smaller than the width of the first partition wall 510. Both the first partition wall 510 and the second partition wall 520 may each comprise an organic insulating material. Both the first partition wall 510 and the second partition wall 520 may each comprise, for example, a display area DA (see example...). Figure 5 The material of the embankment 215 and / or spacer 217.

[0226] refer to Figure 16E Organic light-emitting diodes (OLEDs) can be formed (see example). Figure 6The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 are provided. The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be formed by thermal deposition. Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be deposited in the inner non-display area MA. However, due to the roof structure of the overhang portion P formed in the inner non-display area MA, each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 can be separated into multiple parts. Accordingly, external moisture can be prevented from passing through the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 toward the organic light-emitting diode OLED (see, for example...). Figure 6 (Move)

[0227] Figure 16E The illustration shows each of a first functional layer 222a and a second functional layer 222c, which includes a portion located on the overhanging portion P and a portion located on the bottom surface of the groove G. Similarly, the counter electrode 223 may include a portion located on the overhanging portion P and a portion located on the bottom surface of the groove G.

[0228] refer to Figure 16F An encapsulation layer 300 can be formed. The first inorganic encapsulation layer 310 can be formed by chemical vapor deposition. Because the first inorganic encapsulation layer 310 has relatively excellent step coverage, it can continuously cover the overhang portion P without being separated from it. The first inorganic encapsulation layer 310 can continuously cover the upper surface, side surface, and lower surface of the overhang portion P. The first inorganic encapsulation layer 310 can continuously cover the side surface and upper surface of the first partition wall 510, and can also continuously cover the side surface and upper surface of the second partition wall 520.

[0229] Next, the monomer can be applied and cured to form the organic encapsulation layer 320. The first separator 510 and the second separator 520 control the flow of the monomer, and in embodiments, as shown... Figure 16F As illustrated, the edge of the organic encapsulation layer 320 may be located on one side of the first partition wall 510. In another embodiment, a portion of the organic encapsulation layer 320 may be present between the first partition wall 510 and the second partition wall 520.

[0230] The second inorganic encapsulation layer 330 can be formed on the organic encapsulation layer 320, and the second inorganic encapsulation layer 330 can directly contact the first inorganic encapsulation layer 310 in the internal non-display area MA.

[0231] refer to Figure 16F When a component located in the opening region OA is removed along the cutting line CL using a laser beam or similar method, such as... Figure 16GAs shown in the figure, the opening 10OP in the display panel 10 can be formed in the opening area OA.

[0232] Cracks may form around the opening region OA due to impacts generated during the cutting process used to remove components located in the opening region OA. These cracks or impacts can travel towards the display region DA, but because the display panel 10 includes a trench TCH structure, damage to the display panel 10 caused by these cracks or impacts can be prevented. The structure of the first layer 1100 and the second layer 1200 overlapping with the trench TCH, together with the trench TCH, can prevent damage to the display panel 10 due to cracks or impacts.

[0233] Figure 17 This is a cross-sectional view of a portion of a display panel 10 according to another embodiment.

[0234] According to the reference Figure 7 The described embodiment illustrates overlapping grooves (TCH) and overhanging structures (OHS), but this disclosure is not limited thereto. As another embodiment, such as... Figure 17 As illustrated, the display panel 10 includes a trench TCH, and the trench TCH and the overhang structure OHS do not overlap each other. This is in contrast to the trench TCH and the display area DA (see example...). Figure 5 The second layer 1200, corresponding to or corresponding to the overhang structure OHS between the trench TCH and the second partition wall 520, may extend to overlap a portion of the trench TCH.

[0235] The trench TCH may have a first edge portion and a second edge portion respectively arranged on opposite sides of an imaginary line TCL that passes through the center of the trench TCH in the width direction. The first edge portion (e.g., Figure 17 The left edge portion of the middle) can be relatively close to the opening region OA, and the second edge portion (e.g., Figure 17 The right edge portion of the image can be relatively close to the display area DA (see example). Figure 5 ( ) to serve as the opposite side of the first edge portion.

[0236] The second layer 1200 extending toward the trench TCH can cover the step, for example, on the inner surface ILi of the defined trench TCH of the inorganic insulating structure IL (see example). Figure 13 ) and the upper surface ILU of the inorganic insulating structure IL (see example) Figure 13 The steps formed between the two layers. The second layer 1200 can be in direct contact with a portion of the bottom surface of the trench TCH.

[0237] The protective layer 1115 on the second layer 1200 can extend toward the trench TCH and can directly contact a portion of the bottom surface of the trench TCH beyond the end of the second layer 1200.

[0238] Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223, separated by the overhang structure OHS closest to the trench TCH, can extend to the bottom surface of the trench TCH. In an embodiment, as... Figure 17 As illustrated, the edges of each of the first functional layer 222a, the second functional layer 222c, and the separation portion of the counter electrode 223 extending to the bottom surface of the trench TCH can be located within the trench TCH. In another embodiment, as shown... Figure 7 As illustrated, the separated portions of each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 extending to the bottom surface of the trench TCH can extend toward the opening region OA.

[0239] The structure of the grooved TCH can be used to block or minimize impacts or cracks applied during the manufacturing process in the opening region OA toward the display region DA (see example). Figure 5 The second layer 1200 and the protective layer 1115, each comprising conductive material, can, together with the structure of the trench TCH, block or reduce the travel of impacts or cracks.

[0240] The present disclosure has been described with reference to embodiments illustrated in the accompanying drawings, but these are merely examples. Those skilled in the art will understand that various modifications and variations can be made to the embodiments. Therefore, the technical scope of this disclosure should be determined by the technical spirit of the claims and their equivalents.

[0241] In the display panel according to the embodiment, problems such as cracks in non-display areas can be prevented. In the display panel according to the embodiment, the detachment of the inorganic encapsulation layer around the opening area can be prevented. According to the display panel according to the embodiment, damage to the display element caused by external impurities such as moisture due to the opening area can be prevented. However, the aspects and features of this disclosure described above are exemplary, and the aspects and features of this disclosure are not limited thereto.

[0242] It should be understood that the embodiments described herein are to be considered in a descriptive sense and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the figures, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the claims and their equivalents.

Claims

1. A display panel, comprising: A substrate having an upper surface and a lower surface opposite to the upper surface, and an opening from the upper surface to the lower surface; An inorganic insulating structure comprising a plurality of inorganic insulating layers on the upper surface of the substrate; A plurality of light-emitting diodes are located on the upper surface of the inorganic insulating structure and define a display area extending around the periphery of the opening. At least one of the plurality of light-emitting diodes includes a pixel electrode, a counter electrode on the pixel electrode, and an intermediate layer between the pixel electrode and the counter electrode. An encapsulation layer is provided on the plurality of light-emitting diodes and includes an inorganic encapsulation layer and an organic encapsulation layer; The trench is located in the inorganic insulating structure and in a non-display area between the opening in the substrate and the display area. An insulating layer is provided on one edge portion of the trench and has a groove defined therein; as well as The first metal layer and the second metal layer are spaced apart from each other on the insulating layer. The first metal layer has a first overhanging portion extending toward the groove from a point where the lower surface of the first metal layer and the inner surface of the insulating layer defining the groove intersect each other, the first overhanging portion overlapping the groove. The second metal layer has a second overhanging portion extending toward the groove from the point where the lower surface of the second metal layer and the inner surface of the insulating layer defining the groove intersect each other. The organic layer of the intermediate layer is separated into multiple parts by the first overhang portion and the second overhang portion.

2. The display panel according to claim 1, wherein, The trench has a first edge portion adjacent to the opening in the substrate and a second edge portion opposite to the first edge portion, and The insulating layer overlaps with the second edge portion.

3. The display panel according to claim 1, wherein, The insulating layer comprises organic insulating materials.

4. The display panel according to claim 1, wherein, The upper surface of the first overhanging portion is parallel to a virtual plane parallel to the substrate, or inclined downwards.

5. The display panel according to claim 1, wherein, The portion of the first metal layer on the opposite side of the first overhanging portion is in direct contact with the bottom surface of the trench, and A portion of the second metal layer is in direct contact with the upper surface of the inorganic insulating structure.

6. The display panel according to claim 1, further comprising: A protective layer on the first overhanging portion of the first metal layer.

7. The display panel according to claim 6, wherein, The protective layer is on the upper and side surfaces of the first overhanging portion.

8. The display panel according to claim 6, further comprising: A protective material layer is provided on the bottom surface of the groove, and the protective material layer comprises the same material as the protective layer.

9. The display panel according to claim 6, wherein, The protective layer and the pixel electrode are made of the same material.

10. The display panel according to claim 6, wherein, The protective layer extends above the bottom surface of the trench and is in direct contact with the bottom surface of the trench.

11. The display panel according to claim 1, further comprising: A partition wall, located in the non-display area and surrounding the opening in the substrate. The partition wall is located between the groove and the display area.

12. The display panel according to claim 11, further comprising: A first insulating layer is located between the trench and the display area, and is spaced apart from the insulating layer. as well as Each of the pair of metal layers on the first insulating layer has a hanging portion. The overhanging portion protrudes from the point where the lower surface of the corresponding metal layer of the pair of metal layers intersects with the inner surface of the defined groove of the first insulating layer toward the groove of the first insulating layer.

13. The display panel according to claim 12, wherein, One of the pair of metal layers includes a portion opposite to the overhanging portion of the other metal layer in the pair of metal layers, and Wherein, a portion of one of the pair of metal layers overlaps with the partition wall.

14. The display panel according to claim 13, further comprising: An additional protective layer is applied to the overhanging portion of one of the pair of metal layers. The additional protective layer extends over the upper surface of the portion of one of the pair of metal layers and overlaps with the partition wall.

15. An electronic device comprising: The display panel according to any one of claims 1-14, the display panel having an opening region and a display area extending around the periphery of the opening region; as well as The component overlaps with the opening area of ​​the display panel.

16. The electronic device according to claim 15, wherein, The components include cameras or sensors.

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