Front-end core filter chip for low-orbit satellite interconnection and 5G millimeter wave communication

Abstract

The invention provides a low-orbit satellite interconnection and 5G millimeter wave communication front-end core filter chip, a strip line resonator comprises a dielectric substrate, an upper grounding layer, a first resonance layer, a lower grounding layer and a first metalized through hole, the upper grounding layer, the first resonance layer, the lower grounding layer and the first metalized through hole are embedded in the dielectric substrate, and the first metalized through hole extends along the height direction; the first resonance layer comprises a distributed inductor and a distributed capacitor, the distributed inductor is a strip line, the equivalent area diameter of the distributed capacitor is at least two times of the width of the strip line, the upper end of the first metalized through hole is connected with the upper grounding layer, the lower end of the first metalized through hole is connected with the lower grounding layer, and the lower end of the first metalized through hole is connected with the lower grounding layer. The first end of the distributed inductor is connected with the distributed capacitor, and the second end of the distributed inductor is connected with the middle part of the first metalized through hole. The low-orbit satellite interconnection and 5G millimeter wave communication front-end core filter chip can consider the performance, the size and the frequency range of a microwave / millimeter wave filter.

Description

Technical Field

[0001] This invention relates to the fields of radio frequency microwave / millimeter wave engineering and advanced packaged integrated circuit technology, and in particular to the design of radio frequency front-end chips. Background Technology

[0002] With the rapid development of communication technology towards higher frequencies, higher speeds, and higher integration, satellite low-altitude interconnection and 5G millimeter-wave communication have become core supporting technologies for building future integrated air-space-ground networks.

[0003] In low Earth orbit (LEO) satellite communication systems, large-scale constellation deployments place higher demands on terminal equipment: it not only needs to achieve high-throughput, low-latency data transmission, but also needs to have wide-area coverage and fast handover capabilities. This necessitates the integration of high-performance, low-power key components into the radio frequency front-ends of both onboard and ground terminals within a limited space.

[0004] Meanwhile, 5G millimeter-wave communication utilizes high-frequency bands above 24 GHz (such as 28 GHz, 39 GHz, etc.), providing ultra-large bandwidths of several GHz, significantly improving data transmission rates. However, millimeter-wave signals are characterized by high propagation loss, weak penetration, and susceptibility to environmental interference, posing severe challenges to the purity and anti-interference capabilities of radio frequency links.

[0005] The aforementioned application scenarios all rely on a key fundamental component—high-performance microwave / millimeter-wave filters. Traditionally, two main types of filter structures are used: Cavity filters: Although they have high Q values ​​and good thermal stability, they are bulky and heavy, making it difficult to meet the miniaturization and integration requirements of modern systems; PCB-based microstrip filters, while offering advantages such as ease of fabrication and system integration, suffer from inherent drawbacks in the millimeter-wave band, including high dielectric loss, significant conductor loss, and low quality factor (Q value). These drawbacks result in high insertion loss and poor frequency selectivity, making them unsuitable for high-frequency, high-performance applications. Furthermore, these filters are relatively large, typically ranging from several centimeters to tens of centimeters in size, and are prone to generating electromagnetic radiation that can interfere with nearby devices, posing a significant challenge to the electromagnetic compatibility (EMC) design of the system.

[0006] Therefore, traditional filter architectures can no longer meet the combined requirements of high-frequency performance, miniaturization, low loss, and high reliability, and a new filter design scheme is urgently needed to break through the existing bottlenecks.

[0007] In addition, the industry has the following requirements for filter design: 1) Low Loss at High Frequency: Pain point: When operating in the millimeter-wave band, the dielectric loss and conductor loss of the material increase sharply, resulting in excessively high filter insertion loss, which severely erodes the link budget, especially fatal for power-constrained satellite terminals.

[0008] Requirements: A material with a small dielectric loss tangent and a high Q-value resonant structure are required.

[0009] 2) Extreme miniaturization and integration: Pain point: 5G array antenna (AiP) and LEO terminals require extremely miniaturized RF front-ends in order to be integrated with active chips in SiP (system-in-package).

[0010] Requirements: Traditional filters are too large; high-density multi-functional integration must be achieved at the chip level.

[0011] 3) High Rejection and Selectivity: Pain point: The interference between satellite communication and 5G sharing or adjacent spectrum is severe, requiring filters with extremely high out-of-band suppression capability and steep transition bands to distinguish and filter out clutter.

[0012] Requirement: Transmission zeros need to be introduced to enhance frequency selectivity.

[0013] 4) Environmental Robustness: Pain points: Satellite communication equipment must withstand extreme temperature changes and radiation in space; millimeter-wave base stations must withstand outdoor environments.

[0014] Requirements: The filter materials and structure must have a low thermal drift coefficient and high reliability.

[0015] In summary, existing filters have significant shortcomings in terms of high-frequency loss, size limitations, insufficient selectivity, and environmental adaptability, making it difficult to meet the comprehensive requirements of next-generation communication systems for "high performance, small size, easy integration, and high reliability." There is an urgent need for a novel filter chip technology that integrates advanced materials, innovative structures, and three-dimensional integration processes to provide core support for satellite low-altitude interconnection and 5G / 6G millimeter-wave communication. Summary of the Invention

[0016] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a stripline resonator, a coupling structure between resonators, and a filter chip to solve the problem that microwave / millimeter-wave filters in existing modern communication systems are difficult to balance in terms of performance, size, and frequency range.

[0017] To achieve the above and other related objectives, the present invention provides a stripline resonator having a length direction, a width direction, and a height direction. The stripline resonator includes a dielectric substrate, an upper ground layer embedded in the dielectric substrate, a first resonant layer, a lower ground layer, and a first metallized via. The first metallized via extends along the height direction. The first resonant layer includes a distributed inductor and a distributed capacitance. The distributed inductor is a stripline, and the equivalent area diameter of the distributed capacitance is at least twice the width of the stripline. The upper end of the first metallized via is connected to the upper ground layer, and the lower end of the first metallized via is connected to the lower ground layer. The first end of the distributed inductor is connected to the distributed capacitance, and the second end of the distributed inductor is connected to the middle of the first metallized via.

[0018] Preferably, the stripline resonator includes the following types: In an R1 type stripline resonator, the distributed capacitance is rectangular and the distributed inductance is a stripline extending along a straight line; at the connection between the distributed inductance and the distributed capacitance, one side of the distributed inductance is flush with one side of the distributed capacitance. In an R2 type stripline resonator, the distributed capacitor is rectangular in shape, and the distributed inductor is a stripline extending along a spiral. At the connection between the distributed inductor and the distributed capacitor, one side of the distributed inductor is flush with one side of the distributed capacitor. The R3 type stripline resonator has a rectangular distributed capacitor with an aspect ratio greater than 1.5, and a distributed inductor that is a stripline extending along a straight line. The distributed inductor is connected to the middle of the long side of the distributed capacitor, making the first resonant layer T-shaped overall.

[0019] To achieve the above and other related objectives, the present invention also provides a core filter chip for low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end, the core filter chip for low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end comprising: At least two stripline resonators are provided, and signals are transmitted between the two stripline resonators through inductive coupling, capacitive coupling, or electromagnetic hybrid coupling; each stripline resonator shares the same upper ground plane and each stripline resonator shares the same lower ground plane. An input coupling module, connected to one end of the stripline resonator along the length direction, is used to feed in an external signal; An output coupling module, connected to a stripline resonator at the other end in the length direction, is used to output the filtered signal.

[0020] Preferably, the inductive coupling includes the following types: In the KL1 type inductive coupling, the two first resonant layers of the two stripline resonators are located in the same plane, and the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling. The second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip. The strength of the magnetic field coupling can be adjusted by regulating the distance between the two distributed inductors. The smaller the distance between the two distributed inductors, the stronger the magnetic field coupling, thereby achieving a wider filter operating bandwidth.

[0021] In a KL2 type inductive coupling, the two first resonant layers of the two stripline resonators are located in the same plane. The two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling. The second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip. The first and second ends of the two distributed inductors of the two stripline resonators are connected to each other through a second conductive strip. The strength of the magnetic field coupling can be adjusted by changing the distance between the second and first conductive strips. The greater the distance between the second and first conductive strips, the weaker the magnetic field coupling.

[0022] Preferably, the capacitive coupling includes the following types: In a KC1 type capacitive coupling, the two first resonant layers of the two stripline resonators are located in the same plane, and the two distributed capacitors of the two stripline resonators are close to each other to generate electric field coupling. The strength of the electric field coupling can be adjusted by regulating the distance between the two distributed capacitors. The smaller the distance between the two distributed capacitors, the stronger the electric field coupling.

[0023] In a KC2 type capacitive coupling, the two first resonant layers of the two stripline resonators are located in the same plane. The two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip, with its two ends suspended above or below the two distributed capacitors, respectively. The strength of the electric field coupling can be adjusted by changing the distance and overlap area between the third conductive strip and the distributed capacitors. The smaller the distance between the third conductive strip and the distributed capacitors, the stronger the electric field coupling. The larger the overlap area between the third conductive strip and the distributed capacitors, the stronger the electric field coupling.

[0024] Preferably, the electromagnetic hybrid coupling includes the following types: In a KLC-type electromagnetic hybrid coupling, the two first resonant layers of the two stripline resonators are located in the same plane; the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; and the two distributed capacitances of the two stripline resonators are close to each other to generate electric field coupling.

[0025] In the KC3 type electromagnetic hybrid coupling, the two first resonant layers of the two stripline resonators are located in the same plane; the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; the two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip, the two ends of which are respectively suspended above or below the two distributed capacitors.

[0026] Preferably, the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end further includes an input electrode and an output electrode embedded in the dielectric substrate, wherein the input electrode and the output electrode are located on opposite sides of the dielectric substrate along its length; the input coupling module and / or the output coupling module adopt one of the following types: The IOA-type coupling module includes a second resonant layer and a second metallized via. The second resonant layer includes a distributed inductor and a distributed capacitance. The distributed capacitance of the second resonant layer is directly opposite to the distributed capacitance of a stripline resonator to generate electric field coupling. The upper end of the second metallized via is connected to the distributed inductor of the second resonant layer, and the lower end of the second metallized via is connected to the input electrode and / or the output electrode. The IOB type coupling module includes a fourth conductive strip and a third metallized via. The first end of the fourth conductive strip is connected to the distributed inductance of a stripline resonator, the second end of the fourth conductive strip is connected to the upper end of the third metallized via, and the lower end of the third metallized via is connected to the input electrode and / or the output electrode.

[0027] Preferably, the core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a fourth R2 type stripline resonator, a fifth R2 type stripline resonator, and a sixth R2 type stripline resonator. The first R2 type stripline resonator and the second R2 type stripline resonator are inductively coupled using KL2 type. The second R2 type stripline resonator and the third R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling; The third R2 type stripline resonator and the fourth R2 type stripline resonator are inductively coupled using KL2 type. The fourth R2 type stripline resonator and the fifth R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling. The fifth R2 type stripline resonator and the sixth R2 type stripline resonator are inductively coupled using KL2 type. The second R2 type stripline resonator and the fifth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOA type coupling module; The sixth R2 type stripline resonator is coupled to the output electrode using an IOA type coupling module.

[0028] Preferably, the core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a first R1 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a second R1 type stripline resonator, and a fourth R2 type stripline resonator. The first R2 type stripline resonator and the first R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling; The second R2 type stripline resonator and the third R2 type stripline resonator are inductively coupled using a KL1 type. The third R2 type stripline resonator and the second R1 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling. The second R1 type stripline resonator and the fourth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator is coupled to the output electrode using an IOB type coupling module.

[0029] Preferably, the core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a first R1 type stripline resonator, a second R1 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a third R1 type stripline resonator, a fourth R1 type stripline resonator, and a fourth R2 type stripline resonator. The first R2 type stripline resonator and the first R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R1 type stripline resonator are inductively coupled using a KL1 type. The second R1 type stripline resonator and the second R2 type stripline resonator are coupled using KC2 type capacitive coupling; The second R2 type stripline resonator and the third R2 type stripline resonator are inductively coupled using a KL1 type. The third R2 type stripline resonator and the third R1 type stripline resonator are coupled using KC2 type capacitive coupling; The third R1 type stripline resonator and the fourth R1 type stripline resonator are inductively coupled using KL1 type. The fourth R1 type stripline resonator and the fourth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The second R1 type stripline resonator and the third R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator is coupled to the output electrode using an IOB type coupling module.

[0030] As described above, the core filter chip for low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end of the present invention has at least one of the following beneficial effects: 1) The filter of this application has a closed resonant cavity. Compared with planar microstrip lines, the closed cavity structure can better confine the electromagnetic field within the low-loss ceramic dielectric, greatly reducing radiation loss and conductor loss, and achieving high Q value and ultra-low insertion loss. The closed structure naturally suppresses many higher-order modes and radiation, which helps to improve stopband performance.

[0031] 2) The filter of this application utilizes multi-layer wiring to precisely achieve hybrid coupling of electrical and magnetic coupling. By controlling the relative phase of the coupling paths (e.g., making the electrical and magnetic coupling cancel each other out), transmission zeros can be generated at the edges of the passband. The introduction of transmission zeros makes the transition band of the filter extremely steep, significantly improving frequency selectivity and effectively dealing with interference from adjacent channels.

[0032] 3) It is compatible with a variety of modern microfabrication processes, providing extremely high manufacturing flexibility. The optimal implementation path can be selected based on cost, performance, and integration requirements. Specific compatible processes include: Low Temperature Co-fired Ceramic (LTCC), High Temperature Co-fired Ceramic (HTCC), Multilayer PCB processes, 3D semiconductor integrated passive device (Si / GaAs IPD, etc.) processes, and 3D printing technology (including stereolithography SLA / DLP, etc.). Attached Figure Description

[0033] Figure 1 The diagram shown is a schematic of a stripline resonator according to an embodiment of the present invention.

[0034] Figure 2The diagram shown is a structural schematic of an R1 type stripline resonator according to an embodiment of the present invention.

[0035] Figure 3 The diagram shows the structure of the upper and lower ground planes according to an embodiment of the present invention.

[0036] Figure 4 The diagram shown is a structural schematic of an R2 type stripline resonator according to an embodiment of the present invention.

[0037] Figure 5 The diagram shown is a structural schematic of an R3 type stripline resonator according to an embodiment of the present invention.

[0038] Figure 6 The diagram shown is a schematic diagram of a two-stripline resonator with KL1-type inductive coupling according to an embodiment of the present invention.

[0039] Figure 7 The diagram shown illustrates the principle of inductive coupling according to an embodiment of the present invention.

[0040] Figure 8 The diagram shown is a schematic representation of a KL2-type inductively coupled two stripline resonators according to an embodiment of the present invention.

[0041] Figure 9 The diagram shown is a schematic representation of a two-stripline resonator with KL3-type inductive coupling according to an embodiment of the present invention.

[0042] Figure 10 The diagram shown is a schematic representation of a two-stripline resonator with KC1 capacitive coupling according to an embodiment of the present invention.

[0043] Figure 11 The diagram shown illustrates the principle of capacitive coupling according to an embodiment of the present invention.

[0044] Figure 12 The diagram shown is a schematic representation of a two-stripline resonator with KC2 capacitive coupling according to an embodiment of the present invention.

[0045] Figure 13 The diagram shown illustrates the principle of electromagnetic hybrid coupling according to an embodiment of the present invention.

[0046] Figure 14 The diagram shown is a schematic diagram of a two-stripline resonator employing KLC-type electromagnetic hybrid coupling according to an embodiment of the present invention.

[0047] Figure 15 The diagram shown is a schematic representation of a two-stripline resonator employing KC3-type electromagnetic hybrid coupling according to an embodiment of the present invention.

[0048] Figure 16 The diagram shown is a structural schematic of an IOA-type coupling module according to an embodiment of the present invention.

[0049] Figure 17 The diagram shown is a schematic of an IOA-type coupling module according to an embodiment of the present invention.

[0050] Figure 18 The diagram shown is a structural schematic of an IOB-type coupling module according to an embodiment of the present invention.

[0051] Figure 19 The diagram shown is a schematic of an IOB-type coupling module according to an embodiment of the present invention.

[0052] Figure 20 The diagram shown is a structural schematic of a core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end according to an embodiment of the present invention.

[0053] Figure 21 This is shown as an embodiment of the present invention. Figure 20 The coupling relationship diagram of the stripline resonator in the core filter chip of the low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0054] Figure 22 This is shown as an embodiment of the present invention. Figure 20 The schematic diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0055] Figure 23 This is shown as an embodiment of the present invention. Figure 20 S-parameter curves of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end.

[0056] Figure 24 This is shown as an embodiment of the present invention. Figure 20 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end from one perspective.

[0057] Figure 25 This is shown as an embodiment of the present invention. Figure 20 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication from another perspective.

[0058] Figure 26 The diagram shown is a structural schematic of a core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end according to an embodiment of the present invention.

[0059] Figure 27 This is shown as an embodiment of the present invention. Figure 26 The coupling relationship diagram of the stripline resonator in the core filter chip of the low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0060] Figure 28 This is shown as an embodiment of the present invention. Figure 26The schematic diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0061] Figure 29 This is shown as an embodiment of the present invention. Figure 26 S-parameter curves of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end.

[0062] Figure 30 This is shown as an embodiment of the present invention. Figure 26 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end from one perspective.

[0063] Figure 31 This is shown as an embodiment of the present invention. Figure 26 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication from another perspective.

[0064] Figure 32 The diagram shown is a structural schematic of a core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end according to an embodiment of the present invention.

[0065] Figure 33 This is shown as an embodiment of the present invention. Figure 32 The coupling relationship diagram of the stripline resonator in the core filter chip of the low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0066] Figure 34 This is shown as an embodiment of the present invention. Figure 32 The schematic diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front end.

[0067] Figure 35 This is shown as an embodiment of the present invention. Figure 32 S-parameter curves of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end.

[0068] Figure 36 This is shown as an embodiment of the present invention. Figure 32 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end from one perspective.

[0069] Figure 37 This is shown as an embodiment of the present invention. Figure 32 A packaging diagram of the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication from another perspective. Detailed Implementation

[0070] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0071] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0072] It should be noted that when a component is said to be "connected" to another component, it can be directly connected to the other component or it can be connected to a component in between. When a component is said to be "set on" another component, it can be directly set on the other component or it may be set to a component in between.

[0073] Please refer to Figure 1 A resonator consists of distributed inductance and distributed capacitance. The formula for calculating the resonant frequency is: in, Indicates the resonant frequency; The equivalent inductance representing distributed inductance; The equivalent capacitance represents the distributed capacitance.

[0074] Designing appropriate equivalent inductance and equivalent capacitance will produce the desired resonant frequency.

[0075] Please refer to Figure 2 In one embodiment, this application provides a resonator, which is a stripline resonator. The stripline resonator has a length direction L, a width direction W, and a height direction H. The stripline resonator includes a dielectric substrate t, an upper ground layer g1 embedded in the dielectric substrate t, a first resonant layer, a lower ground layer g2, and a first metallized via h1. The first metallized via h1 extends along the height direction. The first resonant layer includes a distributed inductance. and distributed capacitance Distributed inductance It is a stripline with distributed capacitance. The equivalent area diameter is at least twice the width of the stripline. The upper end of the first metallized via h1 is connected to the upper ground layer g1, and the lower end of the first metallized via h1 is connected to the lower ground layer g2. Distributed inductance. The first end is connected to the distributed capacitance. Distributed inductance The second end connects to the middle of the first metallized through-hole h1. The equivalent area diameter is the diameter of a circle with the same area as the target graphic.

[0076] The dielectric material used in the dielectric substrate t can be ceramic, PCB substrate material, intrinsic semiconductor material, etc. Other parts inside the dielectric substrate t, such as metallized vias and stripe patterns, are metallic. Different metallic properties can be selected depending on the process; for example, silver can be chosen for LTCC processes, heavily doped metal for semiconductor processes, and copper for PCB processes. The upper ground layer g1 and the lower ground layer g2 together form a closed electromagnetic shielding environment, confining energy within the structure, improving the resonator's quality factor, and reducing insertion loss.

[0077] Please refer to Figure 3 In one embodiment, the stripline resonator further includes an upper ground plane g3 and a lower ground plane g4, and a metallized via h connects the upper ground plane g3 and the lower ground plane g4.

[0078] In one embodiment, the upper ground layer g1 and the lower ground layer g2 are multiple layers. The more layers the upper ground layer g1 and the lower ground layer g2 have, the stronger the far-end suppression capability.

[0079] Please refer to Figure 2 In one embodiment, the stripline resonator is an R1 type stripline resonator. In the R1 type stripline resonator, the distributed capacitance... The shape is rectangular, with distributed inductance. It is a stripline extending along a straight line; with distributed inductance and distributed capacitance At the connection point, distributed inductance One side and distributed capacitance One side is flush with the edge.

[0080] For R1 type stripline resonators, the shape of the resonator can be adjusted according to different application requirements. Figure 2 Distributed capacitance in The larger the area, the corresponding Figure 1 equivalent capacitance in The larger the value, the lower the frequency of the resonator. Figure 2 Distributed inductance in The longer the length, the narrower the width, corresponding to Figure 1 Equivalent inductance in The larger the capacitance, the lower the resonator frequency. This can be achieved by increasing or decreasing the distributed capacitance. The area is used to control the equivalent capacitance of the capacitor. The size is determined by increasing or decreasing the distributed inductance. The length and width are used to control the equivalent inductance. The size of the resonator is adjusted to tune it to the desired specific operating frequency. Figure 2 Distributed capacitance in The shape can be a standard rectangle. Figure 2 Distributed capacitance in The shape can also be a shape obtained by chopping, rounding, or stepping one side or corner of a rectangle, used to suppress or offset unwanted parasitic resonance modes.

[0081] Please refer to Figure 4 In one embodiment, the stripline resonator is an R2 type stripline resonator. In the R2 type stripline resonator, the distributed capacitance... The shape is rectangular, with distributed inductance. It is a strip extending along a spiral; in the distributed inductance and distributed capacitance At the connection point, distributed inductance One side of it is flush with one side of the distributed capacitance.

[0082] exist Figure 4 In the middle, distributed inductance It includes a fifth conductive strip s5 and a sixth conductive strip s6. The fifth conductive strip s5 extends along the width direction, and the first end of the fifth conductive strip s5 is connected to the distributed capacitance. The second end of the fifth conductive strip s5 is connected to the sixth conductive strip s6, and one side of the fifth conductive strip s5 is connected to the distributed capacitance. One side is flush with the edge. The sixth conductive strip s6 extends along the length direction. The first end of the sixth conductive strip s6 is connected to the fifth conductive strip s5, and the second end of the sixth conductive strip s6 is connected to the middle of the first metallized through hole h1.

[0083] In one embodiment, the distributed capacitance of the R2 type stripline resonator The shape is the result of cutting, rounding, or stepping one side or corner of a rectangle.

[0084] The R2 type stripline resonator uses distributed inductance... Its shape is designed as a spiral, which enables a longer distributed inductance within the same area. The path makes the equivalent inductance It is higher, which makes it easier to achieve a miniaturized design.

[0085] The distributed inductance of the R1 type stripline resonator is not bent, resulting in a shorter inductance path. For the same dielectric constant and material dimensions, it has a smaller equivalent inductance, the least parasitic capacitance, and the highest resonant frequency. In contrast, the distributed inductance of the R2 type stripline resonator undergoes one or more 90° bends, increasing the current flow distance and thus enhancing the equivalent inductance, thereby lowering the resonant frequency.

[0086] Please refer to Figure 5 In one embodiment, the stripline resonator is an R3 type stripline resonator. In the R3 type stripline resonator, the distributed capacitance... The shape is rectangular, with an aspect ratio greater than 1.5, and the distributed inductance is... A stripline extending along a straight line; distributed inductance Connected to distributed capacitance The middle of the long side makes the first resonant layer T-shaped as a whole.

[0087] exist Figure 5 In the middle, distributed inductance The main line segment of the resonant layer is used to provide the main inductance distribution, corresponding to Figure 1 Equivalent inductance in Distributed capacitance The transverse branches of the resonant layer are used to generate local electric field concentration, corresponding to Figure 1 equivalent capacitance in .

[0088] The R3 type stripline resonator introduces lateral open-circuit stubs along the main stripline, allowing for additional capacitive loading while maintaining a constant physical length. This effectively extends the electrical length and lowers the resonant frequency. The stub dimensions are independently adjustable, enabling independent control of the resonant frequency and achieving a lower resonant point even when substrate size is limited.

[0089] Furthermore, the T-shaped junction formed by the main stripline and the branches alters the current distribution path and introduces additional inductance. The electric field concentration region at the open end of the branch further enhances the equivalent capacitive coupling. Together, these factors strengthen the coupling between the resonators, thus providing greater freedom in designing the filter bandwidth, transmission zeros, and passband shape.

[0090] In one embodiment, this application also provides a core filter chip for the front-end of low-Earth orbit satellite interconnection and 5G millimeter-wave communication. The core filter chip for the front-end of low-Earth orbit satellite interconnection and 5G millimeter-wave communication includes: In at least two or more embodiments, the stripline resonators transmit signals between the two stripline resonators through inductive coupling, capacitive coupling, or electromagnetic hybrid coupling; each stripline resonator shares the same upper ground plane and each stripline resonator shares the same lower ground plane. The input coupling module is connected to a stripline resonator at one end along the length direction for feeding in external signals; The output coupling module is connected to a stripline resonator at the other end of the length direction and is used to output the filtered signal.

[0091] Please refer to Figure 6 In one embodiment, the two stripline resonators are R1 type stripline resonators, and the coupling type between the two stripline resonators is KL1 type inductive coupling. The two first resonant layers of the two stripline resonators, which are inductively coupled by KL1 type, are located in the same plane. The two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling, and are interconnected through a first conductive strip s1.

[0092] Specifically, the two stripline resonators are a first R1-type stripline resonator and a second R1-type stripline resonator, respectively. The distributed capacitance of the first R1-type stripline resonator is... The distributed inductance of the first R1 type stripline resonator is The distributed capacitance of the second R1 type stripline resonator is The distributed inductance of the second R1 type stripline resonator is . and They are parallel and close to each other to generate magnetic field coupling. In the width direction W, and lie in and Between. The second ends of the two distributed inductances of the two stripline resonators are located on the same side of the distributed capacitance. Along the length direction L, lie in On the right side, lie in On the right side.

[0093] Figure 7 The schematic diagram is shown as an inductive coupling principle. In one embodiment, in... Figure 7 middle, This is the equivalent inductance of the first R1 type stripline resonator. This is the equivalent capacitance of the first R1 type stripline resonator. This is the equivalent inductance of the second R1 type stripline resonator. This is the equivalent capacitance of the second R1-type stripline resonator. Inductive coupling is equivalent to connecting a coupling inductor between the first and second R1-type stripline resonators. .

[0094] For KL1 type inductive coupling, the closer the two stripline resonators are, the stronger the coupling. However, due to process limitations, they cannot be brought infinitely close. Therefore, when a wider bandwidth is required, stronger magnetic coupling is needed, and simply moving them closer together is insufficient. To address this issue, this application proposes KL2 type inductive coupling.

[0095] Please refer to Figure 8 In one embodiment, the two stripline resonators are R1 type stripline resonators, and the coupling type between the two stripline resonators is KL2 type inductive coupling. The two first resonant layers of the two stripline resonators, coupled by KL2 type inductive coupling, are located in the same plane. The two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling. The second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip s1. The first and second ends of the two distributed inductors of the two stripline resonators are connected to each other through a second conductive strip s2. By adjusting the position of the second conductive strip s2 connected to the two distributed inductors, the strength of the inductive coupling can be adjusted; the farther the second conductive strip s2 is from the first metallized via h1, the stronger the inductive coupling.

[0096] Please refer to Figure 9 In one embodiment, the two stripline resonators are R2-type stripline resonators, and the coupling type between the two stripline resonators is KL3-type inductive coupling. The two first resonant layers of the two stripline resonators, coupled by KL3-type inductive coupling, are located in the same plane, and the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling. The second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip s1. The upper ground layer g1 and / or the lower ground layer g2 are provided with a first window at a position corresponding to the distributed inductor to allow the coupled magnetic field to pass through. This embodiment, by opening the first window, can reduce the shielding effect of the upper ground layer g1 and / or the lower ground layer g2 on the coupled magnetic field, thereby enhancing the inductive coupling strength between the two stripline resonators.

[0097] Please refer to Figure 10 In one embodiment, the two stripline resonators are R2 type stripline resonators, and the coupling type between the two stripline resonators is KC1 type capacitive coupling. The two first resonant layers of the two stripline resonators coupled by KC1 type capacitive coupling are located in the same plane, and the two distributed capacitances of the two stripline resonators are close to each other to generate electric field coupling.

[0098] Specifically, the two stripline resonators are a first R2-type stripline resonator and a second R2-type stripline resonator, respectively. The distributed capacitance of the first R2-type stripline resonator is... The distributed inductance of the first R2 type stripline resonator is The distributed capacitance of the second R2 type stripline resonator is The distributed inductance of the second R2 type stripline resonator is . and They are moving closer to each other. In the width direction W, and lie in and Between. Along the length direction L, The second end is located The front side, The second end is located The front side.

[0099] Figure 11 The schematic diagram is shown as a capacitive coupling. In one embodiment, in... Figure 11 middle, This is the equivalent inductance of the first R2 type stripline resonator. This is the equivalent capacitance of the first R2 type stripline resonator. This is the equivalent inductance of the second R2 type stripline resonator. This is the equivalent capacitance of the second R2-type stripline resonator. Capacitive coupling is equivalent to connecting a coupling capacitor between the first and second R2-type stripline resonators. .

[0100] By adjusting Figure 10 The spacing between the two resonators can control the capacitive coupling strength, and the spacing is negatively correlated with the coupling strength. Due to limitations in manufacturing processes, and It's impossible to get infinitely close. When a wider bandwidth is required, stronger magnetic coupling is needed, and simply being close in distance is insufficient. To address this issue, this application proposes a KC2-type capacitive coupling.

[0101] Please refer to Figure 12 In one embodiment, the two stripline resonators are R2 type stripline resonators, and the coupling type between the two stripline resonators is KC2 type capacitive coupling. The two first resonant layers of the two stripline resonators coupled by KC2 type capacitive coupling are located in the same plane; the two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip s3, and the two ends of the third conductive strip s3 are respectively suspended above or below the two distributed capacitors.

[0102] Specifically, the two stripline resonators are a first R2-type stripline resonator and a second R2-type stripline resonator, respectively. The distributed capacitance of the first R2-type stripline resonator is... The distributed inductance of the first R2 type stripline resonator is The distributed capacitance of the second R2 type stripline resonator is The distributed inductance of the second R2 type stripline resonator is . and They are moving closer to each other. In the width direction W, and lie in and Between. Along the length direction L, The second end is located The front side, The second end is located The front side. The first end of the third conductive strip s3 is suspended at... Above, the second end of the third conductive strip s3 is suspended. Above.

[0103] The third conductive strip s3 establishes a strong capacitive coupling channel between two initially weakly coupled resonators. The coupling strength can be controlled by adjusting the parameters of the third conductive strip s3; decreasing the perpendicular distance between s3 and the resonator increases the capacitance and strengthens the coupling. Increasing the perpendicular distance weakens the coupling. The coupling strength can also be adjusted by varying the overlap area between the third conductive strip s3 and the distributed capacitance; a larger overlap area results in stronger coupling. The electric field strength varies at different locations on the resonator; placing the metal strip above the open-circuit terminal of the distributed capacitance provides the strongest coupling.

[0104] When both inductive and capacitive coupling exist between two resonators, electromagnetic hybrid coupling is formed. Figure 13 The diagram shows the principle of electromagnetic hybrid coupling. Figure 13 middle, This is the equivalent inductance of the first R2 type stripline resonator. This is the equivalent capacitance of the first R2 type stripline resonator. This is the equivalent inductance of the second R2 type stripline resonator. This is the equivalent capacitance of the second R2-type stripline resonator. Electromagnetic hybrid coupling is equivalent to connecting parallel coupling inductors between the first and second R2-type stripline resonators. and coupling capacitor .

[0105] Please refer to Figure 14 In one embodiment, the two stripline resonators are R2-type stripline resonators, and the coupling type between the two stripline resonators is KLC-type electromagnetic hybrid coupling. The two distributed inductors of the two stripline resonators are brought close to each other to generate magnetic field coupling; the two distributed capacitances of the two stripline resonators are brought close to each other to generate electric field coupling.

[0106] Specifically, in Figure 14In the diagram, the two stripline resonators are a first R2-type stripline resonator and a second R2-type stripline resonator, respectively. The distributed capacitance of the first R2-type stripline resonator is... The distributed inductance of the first R2 type stripline resonator is The first metallized via of the first R2 type stripline resonator is h11. The distributed capacitance of the second R2 type stripline resonator is... The distributed inductance of the second R2 type stripline resonator is The second R2 type stripline resonator has another first metallized via, h12. h11 and h12 are located at opposite ends of the length direction L.

[0107] The distributed inductance of the first R2 type stripline resonator is: This includes a seventh conductive strip s7 and an eighth conductive strip s8. The seventh conductive strip s7 extends along its length, with its first end connected to h11 and its second end connected to the first end of the eighth conductive strip s8. The eighth conductive strip s8 extends to the right along its width, with its second end connected to the distributed capacitance. Distributed capacitance It extends from the second end of the eighth conductive strip s8 in the direction of h11.

[0108] The distributed inductance of the second R2 type stripline resonator is: This includes a ninth conductive strip s9 and a tenth conductive strip s10. The ninth conductive strip s9 extends along its length, with its first end connected to h12 and its second end connected to the first end of the tenth conductive strip s10. The tenth conductive strip s10 extends to the left along its width, with its second end connected to the distributed capacitance. Distributed capacitance It extends from the second end of the tenth conductive strip s10 in the direction of h12.

[0109] Please refer to Figure 15 In one embodiment, the two stripline resonators are R2 type stripline resonators, and the coupling type between the two stripline resonators is KC3 type electromagnetic hybrid coupling. The two first resonant layers of the two stripline resonators using KC3 type electromagnetic hybrid coupling are located in the same plane, and the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; the two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip s3, and the two ends of the third conductive strip s3 are respectively suspended above or below the two distributed capacitors.

[0110] Specifically, in Figure 15 In the diagram, the two stripline resonators are a first R2-type stripline resonator and a second R2-type stripline resonator, respectively. The distributed capacitance of the first R2-type stripline resonator is... The distributed inductance of the first R2 type stripline resonator is The distributed capacitance of the second R2 type stripline resonator is The distributed inductance of the second R2 type stripline resonator is .

[0111] The third conductive strip s3 forms an additional electric field coupling path with the resonator surface, thereby increasing the coupling capacitance. This structure mainly changes the capacitive coupling component and has little impact on the magnetic field distribution; therefore, it exhibits an overall capacitively coupled enhanced structure. The third conductive strip s3 can also be placed at an angle, with its two ends positioned directly above the capacitor portion of the resonator, to achieve even better capacitive coupling.

[0112] In one embodiment, the core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end also includes an input electrode and an output electrode embedded in a dielectric substrate, with the input electrode and output electrode located on opposite sides of the dielectric substrate along its length.

[0113] Please refer to Figure 16 In one embodiment, the input coupling module and / or output coupling module adopts an IOA-type coupling module. The IOA-type coupling module includes a second resonant layer and a second metallized via h2. The second resonant layer includes a distributed inductance. and distributed capacitance The distributed capacitance of the second resonant layer and the distributed capacitance of a stripline resonator The two are aligned vertically to generate electric field coupling; the upper end of the second metallized via h2 is connected to the distributed inductance of the second resonant layer. The lower end of the second metallized via h2 is connected to the input electrode e1 and / or the output electrode. The port feed line of the IOA-type coupling module is dielectrically isolated from the resonator conductor, with no direct electrical connection. Energy transfer between them is primarily achieved through the interaction of the electric field formed by the coupling gap between them.

[0114] Figure 17 The schematic diagram is shown as an IOA-type coupling. Figure 17 middle, This is the equivalent inductance of the stripline resonator. This is the equivalent capacitance of the stripline resonator. The core filter chip for the low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end, which uses an IOA-type input coupling module, is equivalent to connecting a coupling capacitor CS between the external power source and the stripline resonator at the input end.

[0115] Please refer to Figure 18In one embodiment, the input coupling module and / or output coupling module adopts an IOB-type coupling module. The IOB-type coupling module includes a fourth conductive strip s4 and a third metallized via h3. The first end of the fourth conductive strip s4 is connected to the distributed inductance of a stripline resonator. The second end of the fourth conductive strip s4 is connected to the upper end of the third metallized through hole h3, and the lower end of the third metallized through hole h3 is connected to the input electrode e1 and / or the output electrode.

[0116] In a filter employing an IOB-type coupling module, the fourth conductive strip s4 is positioned on the resonator. By adjusting the position of the connection point between the fourth conductive strip s4 and the resonator on the distributed inductance, the port coupling strength can be continuously adjusted, thereby controlling the absolute bandwidth and passband matching characteristics of the filter. When the fourth conductive strip s4 is positioned higher, the coupling is enhanced, resulting in a relatively wider bandwidth, suitable for broadband filters. When the fourth conductive strip s4 is positioned lower, the coupling is weakened, resulting in a relatively narrower bandwidth, suitable for narrowband filters.

[0117] Figure 19 The schematic diagram is shown as an I / O B-type coupling. Figure 19 middle, This is the equivalent inductance of the stripline resonator. This is the equivalent capacitance of the stripline resonator. The core filter chip for the low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end, which uses an IOB-type input coupling module, is equivalent to connecting a coupling inductor LS between the external power source and the stripline resonator at the input end.

[0118] Please refer to Figures 20-25In one embodiment, the core filter chip for the low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end includes a first R2-type stripline resonator 210, a second R2-type stripline resonator 220, a third R2-type stripline resonator 230, a fourth R2-type stripline resonator 240, a fifth R2-type stripline resonator 250, and a sixth R2-type stripline resonator 260. The first R2-type stripline resonator 210 and the second R2-type stripline resonator 220 are inductively coupled using a KL2 type; the second R2-type stripline resonator 220 and the third R2-type stripline resonator 230 are coupled using a KC3 type electromagnetic hybrid coupling; the third R2-type stripline resonator 230 and the fourth R2-type stripline resonator 240 are coupled using a KL2 type inductive coupling; and the fourth R2-type stripline resonator 240 and the fifth R2-type stripline resonator 250 are coupled using a KC3 type electromagnetic hybrid coupling. KC3 type electromagnetic hybrid coupling is used; KL2 type inductive coupling is used between the fifth R2 type stripline resonator 250 and the sixth R2 type stripline resonator 260; KC2 type capacitive coupling is used between the second R2 type stripline resonator 220 and the fifth R2 type stripline resonator 250; IOA type coupling module is used between the first R2 type stripline resonator 210 and the input electrode; IOA type coupling module is used between the sixth R2 type stripline resonator 260 and the output electrode.

[0119] The filter in this embodiment is a Ku-band narrowband microwave filter chip, operating in the frequency band of 16.8 GHz to 20.6 GHz (the communication frequency band for low-Earth orbit Starlink technology). It can be applied in the following scenarios: satellite communication and satellite internet terminals; radar and electronic warfare systems; next-generation wireless communication and point-to-point microwave relay; high-speed data links and remote sensing / telemetry systems.

[0120] Currently, the Ku-band filter market is largely dominated by LC or microstrip filters based on traditional PCB manufacturing processes. However, due to limitations in conductor and dielectric losses, these filters generally have low unloaded Q values. Consequently, filters composed of these structures not only have high insertion losses but also limited out-of-band rejection capabilities. Furthermore, these filters are relatively large in physical size, typically several centimeters or more, and their upper layers are open structures exposed to air, making them prone to electromagnetic radiation and interference with nearby devices, posing a significant challenge to the electromagnetic compatibility (EMC) design of the system.

[0121] The main coupling structure of the filter in this embodiment ensures the filter's fundamental bandpass response. The cross-coupling between the second R2-type stripline resonator and the fifth R2-type stripline resonator generates one or more transmission zeros near the passband. This significantly improves the filter's transition speed from the passband to the stopband, enhances selectivity, and also extends the stopband width.

[0122] The filter in this embodiment exhibits extremely low insertion loss and good matching characteristics within the passband: the insertion loss S21 at 16.8 GHz, 19.0 GHz, and 20.6 GHz is approximately -0.063 dB, -0.079 dB, and -0.070 dB, respectively. The typical passband insertion loss of less than 0.1 dB indicates extremely low energy loss and small amplitude fluctuation within the passband. At the same time, the return loss near the passband is good, reaching approximately -18.93 dB near 18.7 GHz, indicating excellent port matching. More notably, this embodiment exhibits a steep roll-off and wide stopband suppression out of band: the suppression depth reaches approximately 60.8 dB at 15.0 GHz on the low-frequency side and approximately 40.5 dB at 22.5 GHz on the high-frequency side; it also maintains strong suppression capabilities at higher frequency bands, approximately 35.9 dB at 42 GHz and approximately 32.0 dB at 49.7 GHz, demonstrating effective suppression of out-of-band interference and high-order spurious / harmonic waves, which can significantly improve the signal-to-noise ratio and anti-interference capability of communication / radar systems.

[0123] This embodiment of the filter utilizes LTCC multilayer ceramic dielectric and embedded metal conductors, with a standard surface-mount package offering excellent manufacturability and ease of assembly. Its device size can be as small as 3.2 mm × 4.3 mm × 0.95 mm, meeting the application requirements of miniaturized terminals and highly integrated RF front-ends. In summary, this embodiment, with its combined advantages of low insertion loss, high selectivity, wide stopband with strong suppression, and miniaturized packaging, not only replaces traditional PCB-based filter solutions on the market but is also suitable for applications with stringent performance requirements, such as satellite communication terminals, low-altitude economic UAV data links, and high-performance microwave / millimeter-wave front-ends.

[0124] Please refer to Figures 26-31 In one embodiment, the core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator 210, a first R1 type stripline resonator 110, a second R2 type stripline resonator 220, a third R2 type stripline resonator 230, a second R1 type stripline resonator 120, and a fourth R2 type stripline resonator 240. The first R2 type stripline resonator 210 and the first R1 type stripline resonator 110 are coupled by KC2 type capacitive coupling; The first R1 type stripline resonator 110 and the second R2 type stripline resonator 220 are coupled by KC3 type electromagnetic hybrid coupling. The second R2 type stripline resonator 220 and the third R2 type stripline resonator 230 are inductively coupled using a KL1 type. The third R2 type stripline resonator 230 and the second R1 type stripline resonator 120 are coupled by KC3 type electromagnetic hybrid coupling. The second R1 type stripline resonator 120 and the fourth R2 type stripline resonator 240 are coupled by KC2 type capacitive coupling. The first R1 type stripline resonator 110 and the second R1 type stripline resonator 120 are coupled by KC2 type capacitive coupling; The first R2 type stripline resonator 210 is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator 240 uses an IOB type coupling module between itself and the output electrode.

[0125] This embodiment provides a narrowband bandpass filter chip suitable for the 5G millimeter wave N257 band (26.5 GHz~29.5 GHz). It is implemented using LTCC (low temperature co-fired ceramic) technology, and the device size can be 3.2 mm × 2.5 mm × 0.5 mm. It can meet the application requirements of millimeter wave RF front-end for miniaturization and high performance. It is suitable for scenarios such as fixed wireless access terminals (FWA), point-to-point millimeter wave backhaul links, short-range high-speed data links, and low-altitude communication / sensing fusion subsystems.

[0126] refer to Figure 29 As shown in the S-parameter curves, the filter in this embodiment achieves a stable passband response within the N257 band (26.5 GHz to 29.5 GHz), exhibiting low passband insertion loss and flat transmission characteristics. Specifically, the insertion loss S21 at 26.5 GHz (m1) and 29.5 GHz (m2) is approximately -0.469 dB and -0.583 dB, respectively, with a typical passband insertion loss of less than 0.6 dB, indicating high signal transmission efficiency and low energy loss within the passband. Furthermore, the filter demonstrates good port matching characteristics within the passband, with return loss meeting millimeter-wave front-end matching requirements. At 27.82 GHz (m9), the return loss is approximately -17.59 dB, exhibiting low reflection and low standing wave ratio, which is beneficial for improving the stability of the transceiver link and system efficiency.

[0127] Furthermore, this embodiment forms a basic bandpass response through the main coupling of the resonators and introduces cross-coupling or source-load coupling between specific resonators, thereby generating transmission zeros or strong suppression points on both sides of the passband, significantly improving the steepness and selectivity of the transition from the passband to the stopband. Figure 29As can be seen, strong stopband suppression is achieved in the near-adjacent frequency regions on both the low-frequency and high-frequency sides of the passband: the suppression depth is approximately 31.33 dB at 25.15 GHz (m4) and approximately 38.72 dB at 23.195 GHz (m5); on the high-frequency side of the passband, the suppression depth is approximately 30.10 dB at 30.6 GHz (m3) and approximately 30.34 dB at 31.325 GHz (m6). These results demonstrate that this embodiment can rapidly form effective stopbands on both sides of the passband, improving the suppression capability against adjacent channel interference and out-of-band noise.

[0128] Furthermore, this embodiment maintains a certain out-of-band suppression capability at higher frequency bands to suppress higher-order spurious and harmonic components. It achieves approximately 29.64 dB suppression at 50.45 GHz (m7) and approximately 22.02 dB suppression at 57.4 GHz (m8), and exhibits a deeper stopband attenuation valley in the approximately 35–40 GHz range, demonstrating a wide high-frequency stopband suppression range. In summary, the filter in this embodiment achieves low insertion loss and good matching within the N257 passband, and forms strong suppression and a steep roll-off on both sides of the passband. It combines the advantages of miniaturization and high selectivity, making it suitable for 5G millimeter-wave RF modules and subsystems with size constraints and high out-of-band suppression requirements.

[0129] Please refer to Figures 32-37 In one embodiment, the core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator 210, a first R1 type stripline resonator 110, a second R1 type stripline resonator 120, a second R2 type stripline resonator 220, a third R2 type stripline resonator 230, a third R1 type stripline resonator 130, a fourth R1 type stripline resonator 140, and a fourth R2 type stripline resonator 240. The first R2 type stripline resonator 210 and the first R1 type stripline resonator 110 are coupled by KC2 type capacitive coupling; The first R1 type stripline resonator 110 and the second R1 type stripline resonator 120 are inductively coupled using a KL1 type. The second R1 type stripline resonator 120 and the second R2 type stripline resonator 220 are coupled by KC2 type capacitive coupling; The second R2 type stripline resonator 220 and the third R2 type stripline resonator 230 are inductively coupled using a KL1 type. The third R2 type stripline resonator 230 and the third R1 type stripline resonator 130 are coupled by KC2 type capacitive coupling. The third R1 type stripline resonator 130 and the fourth R1 type stripline resonator 140 are inductively coupled using a KL1 type. The fourth R1 type stripline resonator 140 and the fourth R2 type stripline resonator 240 are coupled by KC2 type capacitive coupling; The second R1 type stripline resonator 120 and the third R1 type stripline resonator 130 are coupled by KC2 type capacitive coupling. The first R2 type stripline resonator 210 is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator 240 uses an IOB type coupling module between itself and the output electrode.

[0130] The filter in this embodiment operates in the 5G millimeter-wave N258 band (operating frequency band: 24.25~27.50 GHz). It is implemented using LTCC (low-temperature co-fired ceramic) technology, and the device dimensions can be as small as 3.5 mm × 2.5 mm × 0.6 mm. It is suitable for millimeter-wave front-end subsystems that are sensitive to passband loss and port matching, and have clear performance constraints on adjacent frequency and spurious suppression.

[0131] The filter in this embodiment exhibits a stable passband response in the frequency range of 24.25 GHz to 27.50 GHz, with low passband insertion loss and flat transmission. At 24.25 GHz (m1), 26.00 GHz (m2), and 27.50 GHz (m4), the insertion loss S21 is approximately -0.463 dB, -0.441 dB, and -0.523 dB, respectively. The typical passband insertion loss is less than 0.6 dB, indicating low energy loss and high signal transmission efficiency within the passband, as well as minimal passband amplitude fluctuations, meeting the low-loss requirements of millimeter-wave communication links. Meanwhile, the filter in this embodiment has good port matching characteristics in the passband, and the return loss in the passband is at a relatively good level. The return loss is about -19.04 dB at 25.925 GHz (m6) and about -20.98 dB at 27.50 GHz (m7), indicating that the input and output ports have low reflection and low standing wave ratio, which can effectively improve the stability and power utilization of the transceiver link.

[0132] Furthermore, this embodiment forms a basic bandpass response through multi-resonator main coupling and introduces cross-coupling or source-load coupling between the resonators, resulting in transmission zeros or strong suppression points on both sides of the passband. This significantly improves the steepness of the transition from the passband to the stopband and enhances selectivity. As shown in the figure, the suppression depth is approximately 32.37 dB at 22.90 GHz (m3) on the low-frequency side of the passband and approximately 32.66 dB at 29.02 GHz (m5) on the high-frequency side of the passband. This indicates that this embodiment can quickly establish an effective stopband on both sides of the passband and has a strong suppression capability against adjacent channel interference and out-of-band noise. This embodiment still exhibits a wide stopband suppression range at higher frequencies and shows a significant deep suppression valley characteristic after the high-frequency side of the passband, which is beneficial for further suppressing higher-order spurious and harmonic components, thereby improving the system signal-to-noise ratio and anti-interference capability.

[0133] In summary, the filter in this embodiment, with its miniaturization advantages of LTCC technology and the combined characteristics of low passband loss, good matching, and strong out-of-band suppression, can effectively suppress out-of-band interference and spurious signals in 5G millimeter-wave communication transceivers, phased array modules, and highly integrated RF components, thereby improving system-level spectrum performance, anti-interference capability, and electromagnetic compatibility.

[0134] This application presents a core filter chip for the low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end. Through cross-band fusion design, advanced semiconductor processes, and structural innovation, it overcomes the performance limitations of traditional filters in the millimeter-wave band, providing a high-performance, miniaturized, and highly reliable filter chip solution for low-altitude satellite interconnection and 5G millimeter-wave communication. This technology not only helps promote the development of integrated air-space-ground networks and reduce equipment costs and complexity, but also lays the device foundation for future 6G communication, demonstrating significant industrial value and application prospects.

[0135] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered to be within the scope of this specification. When technical features of different embodiments are embodied in the same drawing, it can be regarded as the drawing also disclosing examples of combinations of the various embodiments involved.

[0136] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A stripline resonator, the stripline resonator having a length direction, a width direction, and a height direction, the stripline resonator comprising a dielectric substrate, an upper ground layer embedded in the dielectric substrate, a first resonant layer, a lower ground layer, and a first metallized via, the first metallized via extending along the height direction; the first resonant layer comprising distributed inductance and distributed capacitance, characterized in that, The distributed inductor is a stripline, and the equivalent area diameter of the distributed capacitor is at least twice the width of the stripline. The upper end of the first metallized via is connected to the upper ground layer, and the lower end of the first metallized via is connected to the lower ground layer. The first end of the distributed inductor is connected to the distributed capacitor, and the second end of the distributed inductor is connected to the middle of the first metallized via.

2. The stripline resonator according to claim 1, characterized in that, The stripline resonator includes the following types: The R1 type stripline resonator has a rectangular distributed capacitance and a stripline inductance that extends along a straight line. At the connection point of the distributed inductor and the distributed capacitor, one side of the distributed inductor is flush with one side of the distributed capacitor. In an R2 type stripline resonator, the distributed capacitor is rectangular in shape, and the distributed inductor is a stripline extending along a spiral. At the connection between the distributed inductor and the distributed capacitor, one side of the distributed inductor is flush with one side of the distributed capacitor. The R3 type stripline resonator has a rectangular distributed capacitor with an aspect ratio greater than 1.5, and a distributed inductor that is a stripline extending along a straight line. The distributed inductor is connected to the middle of the long side of the distributed capacitor, making the first resonant layer T-shaped overall.

3. A core filter chip for low-Earth orbit satellite interconnection and 5G millimeter-wave communication front-end, characterized in that, The core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front-end includes: At least two stripline resonators as described in claim 2, wherein the two stripline resonators transmit signals through inductive coupling, capacitive coupling, or electromagnetic hybrid coupling; each stripline resonator shares the same upper ground plane and each stripline resonator shares the same lower ground plane; An input coupling module, connected to one end of the stripline resonator along the length direction, is used to feed in an external signal; An output coupling module, connected to a stripline resonator at the other end in the length direction, is used to output the filtered signal.

4. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end as described in claim 3, characterized in that, The inductive coupling includes the following types: In KL1 type inductive coupling, the two first resonant layers of the two stripline resonators are located in the same plane, and the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; the second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip. In KL2 type inductive coupling, the two first resonant layers of the two stripline resonators are located in the same plane, and the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; the second ends of the two distributed inductors of the two stripline resonators are connected to each other through a first conductive strip; the first ends and the second ends of the two distributed inductors of the two stripline resonators are connected to each other through a second conductive strip.

5. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end as described in claim 4, characterized in that, The capacitive coupling includes the following types: In KC1 type capacitive coupling, the two first resonant layers of the two stripline resonators are located in the same plane, and the two distributed capacitances of the two stripline resonators are close to each other to generate electric field coupling. In the KC2 type capacitive coupling, the two first resonant layers of the two stripline resonators are located in the same plane; the two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip, and the two ends of the third conductive strip are respectively suspended above or below the two distributed capacitors.

6. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end as described in claim 5, characterized in that, The electromagnetic hybrid coupling includes the following types: In a KLC-type electromagnetic hybrid coupling, the two first resonant layers of the two stripline resonators are located in the same plane; the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; and the two distributed capacitances of the two stripline resonators are close to each other to generate electric field coupling. In the KC3 type electromagnetic hybrid coupling, the two first resonant layers of the two stripline resonators are located in the same plane; the two distributed inductors of the two stripline resonators are close to each other to generate magnetic field coupling; the two distributed capacitors of the two stripline resonators generate electric field coupling through a third conductive strip, the two ends of which are respectively suspended above or below the two distributed capacitors.

7. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end as described in claim 6, characterized in that, The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end also includes an input electrode and an output electrode embedded in the dielectric substrate, wherein the input electrode and the output electrode are located on opposite sides of the dielectric substrate along its length; the input coupling module and / or the output coupling module adopt one of the following types: The IOA-type coupling module includes a second resonant layer and a second metallized via. The second resonant layer includes a distributed inductor and a distributed capacitance. The distributed capacitance of the second resonant layer is directly opposite to the distributed capacitance of a stripline resonator to generate electric field coupling. The upper end of the second metallized via is connected to the distributed inductor of the second resonant layer, and the lower end of the second metallized via is connected to the input electrode and / or the output electrode. The IOB type coupling module includes a fourth conductive strip and a third metallized via. The first end of the fourth conductive strip is connected to the distributed inductance of a stripline resonator, the second end of the fourth conductive strip is connected to the upper end of the third metallized via, and the lower end of the third metallized via is connected to the input electrode and / or the output electrode.

8. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end as described in claim 7, characterized in that, The core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a fourth R2 type stripline resonator, a fifth R2 type stripline resonator, and a sixth R2 type stripline resonator. The first R2 type stripline resonator and the second R2 type stripline resonator are inductively coupled using KL2 type. The second R2 type stripline resonator and the third R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling; The third R2 type stripline resonator and the fourth R2 type stripline resonator are inductively coupled using KL2 type. The fourth R2 type stripline resonator and the fifth R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling. The fifth R2 type stripline resonator and the sixth R2 type stripline resonator are inductively coupled using KL2 type. The second R2 type stripline resonator and the fifth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOA type coupling module; The sixth R2 type stripline resonator is coupled to the output electrode using an IOA type coupling module.

9. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end according to claim 7, characterized in that, The core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a first R1 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a second R1 type stripline resonator, and a fourth R2 type stripline resonator. The first R2 type stripline resonator and the first R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R2 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling; The second R2 type stripline resonator and the third R2 type stripline resonator are inductively coupled using a KL1 type. The third R2 type stripline resonator and the second R1 type stripline resonator are coupled by KC3 type electromagnetic hybrid coupling. The second R1 type stripline resonator and the fourth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator is coupled to the output electrode using an IOB type coupling module.

10. The core filter chip for low-orbit satellite interconnection and 5G millimeter-wave communication front-end according to claim 7, characterized in that, The core filter chip for the low-orbit satellite interconnection and 5G millimeter-wave communication front end includes a first R2 type stripline resonator, a first R1 type stripline resonator, a second R1 type stripline resonator, a second R2 type stripline resonator, a third R2 type stripline resonator, a third R1 type stripline resonator, a fourth R1 type stripline resonator, and a fourth R2 type stripline resonator. The first R2 type stripline resonator and the first R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R1 type stripline resonator and the second R1 type stripline resonator are inductively coupled using a KL1 type. The second R1 type stripline resonator and the second R2 type stripline resonator are coupled using KC2 type capacitive coupling; The second R2 type stripline resonator and the third R2 type stripline resonator are inductively coupled using a KL1 type. The third R2 type stripline resonator and the third R1 type stripline resonator are coupled using KC2 type capacitive coupling; The third R1 type stripline resonator and the fourth R1 type stripline resonator are inductively coupled using KL1 type. The fourth R1 type stripline resonator and the fourth R2 type stripline resonator are coupled using KC2 type capacitive coupling; The second R1 type stripline resonator and the third R1 type stripline resonator are coupled using KC2 type capacitive coupling; The first R2 type stripline resonator is coupled to the input electrode using an IOB type coupling module; The fourth R2 type stripline resonator is coupled to the output electrode using an IOB type coupling module.

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