Display panel and display device

Abstract

The invention discloses a display panel and a display device. The display panel comprises pixel units arranged in an array mode, each pixel unit comprises at least three color sub-pixel areas, and each pixel unit comprises a first transparent electrode structure located in the first color sub-pixel area, a second transparent electrode structure located in the second color sub-pixel area and a third transparent electrode structure located in the third color sub-pixel area; the first pixel definition layer is arranged on the side, away from the substrate, of the transparent electrode layer, and the first pixel definition layer is provided with a first opening for exposing the first transparent electrode structure, a second opening for exposing the second transparent electrode structure and a third opening for exposing the third transparent electrode structure. According to the OLED display panel, the pixel definition layer opening larger than the transparent electrode layer opening is formed, the weak microcavity light emitting phenomenon in the edge area of the pixel unit is effectively removed, the OLED light emitting efficiency is improved, and high-brightness and high-color-gamut light emitting of the OLED display panel is achieved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display panel and a display device comprising the display panel. Background Technology

[0002] Compared to traditional AMOLED display technology, silicon-based OLED microdisplays use single-crystal silicon chips as a substrate and leverage mature CMOS technology to achieve smaller pixel sizes and higher integration, making them suitable for near-eye display products comparable to large-screen displays and thus attracting widespread attention.

[0003] However, current silicon-based OLEDs still suffer from low luminous efficiency. The causes of this problem can be mainly attributed to the following aspects: First, in terms of device structure, single-layer structures have limited exciton utilization efficiency, while the energy level matching between functional layers in traditional multilayer structures is not ideal, leading to low carrier injection and transport efficiency and the formation of quenching centers at interfaces, limiting the radiative recombination probability of excitons. Second, silicon-based CMOS driving backplanes face the inherent limitation of decreasing pixel aperture ratio when achieving high resolution. A large amount of incident light is absorbed or reflected by the blocking structures between pixels, resulting in a reduction in the actual effective light-emitting area. Simultaneously, the low optical coupling efficiency between the silicon substrate and the OLED functional layers means that some waveguide modes are confined in the organic layer or indium tin oxide (ITO) anode and cannot be effectively extracted, further weakening the light extraction efficiency. Furthermore, the fine pixel patterning process used to achieve high resolution may introduce edge defects, exacerbating nonradiative recombination and potentially disrupting the uniformity and continuity of the functional layer films. In summary, the luminous efficiency of silicon-based OLEDs is limited by multiple factors, including device structure design, optical loss of silicon-based driving backplane, and adaptability to micro-nano processes. It is urgent to optimize the luminous efficiency bottleneck through multi-dimensional collaboration, including material system, optical structure and process integration. Summary of the Invention

[0004] Objective of the Invention: The objective of this invention is to provide a display panel that solves the problem of how to convert the effective light-emitting area of ​​a pixel unit into a strong microcavity light-emitting area. Another objective of this invention is to provide a display device that solves the problem of how to improve the brightness and color gamut performance of the display device.

[0005] Technical solution: The present invention provides a display panel comprising an array of pixel units, each pixel unit comprising at least three color sub-pixel regions, the at least three color sub-pixel regions comprising a first color sub-pixel region, a second color sub-pixel region, and a third color sub-pixel region. The pixel unit includes: A transparent electrode layer, the transparent electrode layer comprising a first transparent electrode structure located in a first color sub-pixel region, a second transparent electrode structure located in a second color sub-pixel region, and a third transparent electrode structure located in a third color sub-pixel region; A first pixel definition layer is disposed on the side of the transparent electrode layer away from the substrate. The first pixel definition layer has a first opening that exposes the first transparent electrode structure, a second opening that exposes the second transparent electrode structure, and a third opening that exposes the third transparent electrode structure.

[0006] Preferably, the two edges of the projection of the first pixel definition layer with the first opening onto the substrate are the first edge and the second edge, respectively; The projection of the first transparent electrode structure onto the substrate has a third side close to the first side and a fourth side close to the second side; The horizontal distance between the first side and the third side is a first value; the horizontal distance between the second side and the fourth side is a second value, and both the first value and the second value are greater than 0.

[0007] Furthermore, both the first value and the second value are not less than 0.1 micrometers and not greater than 0.5 micrometers.

[0008] Furthermore, the first value is equal to the second value.

[0009] Similarly, the corresponding arrangement of the second opening and the second transparent electrode structure, and the third opening and the third transparent electrode structure, refers to the first opening and the first transparent electrode structure described above.

[0010] Preferably, the display panel further includes a second pixel definition layer, which is disposed between the transparent electrode layer and the first pixel definition layer; The second pixel definition layer has a fourth opening that exposes the first transparent electrode structure, a fifth opening that exposes the second transparent electrode structure, and a sixth opening that exposes the third transparent electrode structure; The fourth opening is larger than the first opening, the fifth opening is larger than the second opening, and the sixth opening is larger than the third opening.

[0011] Preferably, the thicknesses of the first transparent electrode structure, the second transparent electrode structure, and the third transparent electrode structure are all equal along the direction perpendicular to the substrate.

[0012] Furthermore, the display panel also includes a first dielectric layer; The first dielectric layer is disposed in the same layer as the transparent electrode layer, and the first dielectric layer is located between any two of the first transparent electrode structure, the second transparent electrode structure and the third transparent electrode structure.

[0013] Furthermore, the display panel also includes: The second dielectric layer is disposed on the side of the transparent electrode layer near the substrate; A metal electrode layer is disposed inside the second dielectric layer. The metal electrode layer includes a first metal electrode structure located in the first color sub-pixel region, a second metal electrode structure located in the second color sub-pixel region, and a third metal electrode structure located in the third color sub-pixel region. The upper surface of the first metal electrode structure is lower than the second metal electrode structure and higher than the third metal electrode structure.

[0014] Preferably, the thickness of the first transparent electrode, the second transparent electrode, and the third transparent electrode structure gradually increases along the direction perpendicular to the substrate.

[0015] Furthermore, the display panel further includes: a first dielectric layer, which is disposed in the same layer as the transparent electrode layer. The first dielectric layer includes a first dielectric structure disposed on both sides of the first transparent electrode and having the same thickness as the first transparent electrode, a second dielectric structure disposed on both sides of the second transparent electrode and having the same thickness as the second transparent electrode, and a third dielectric structure disposed on both sides of the third transparent electrode and having the same thickness as the third transparent electrode. A metal electrode layer is disposed on the side of the transparent electrode layer near the substrate; the metal electrode layer includes a first metal electrode structure located in the first color sub-pixel region, a second metal electrode structure located in the second color sub-pixel region, and a third metal electrode structure located in the third color sub-pixel region; the upper surfaces of the first metal electrode structure, the second metal electrode structure, and the third metal electrode structure are all located on the same plane; The fourth dielectric structure is disposed between any two of the first metal electrode structure, the second metal electrode structure, and the third metal electrode structure.

[0016] Preferably, the display panel further includes an organic light-emitting layer, a cathode layer, an encapsulation layer, a planarization layer, a filter layer, and a lens layer, which are sequentially disposed on the side of the first pixel definition layer away from the substrate.

[0017] Another aspect of the present invention provides a display device including the display panel described above.

[0018] Beneficial effects: Compared with the prior art, the present invention has the following significant advantages: In this invention, the projection edge of the pixel definition layer with an opening on the substrate is larger than the projection edge of the corresponding transparent electrode structure on the substrate. This structure can effectively eliminate the weak microcavity light emission phenomenon in the edge region of the pixel unit, and transform the effective light emission area of ​​the OLED pixel unit into strong microcavity light emission in the central region, thereby increasing the light emission efficiency of the OLED and realizing high brightness and high color gamut light emission of the OLED display panel. Attached Figure Description

[0019] Figure 1 A cross-sectional view of the opening region structure of an existing pixel unit; Figure 2 The spectral test results are for the center and edge regions of the existing pixel aperture. Figure 3 This is a cross-sectional view of the pixel unit structure in Example 1; Figure 4 This is a cross-sectional view of the display panel in Embodiment 1; Figure 5 This is a cross-sectional view of the pixel unit structure in Example 2; Figure 6 This is a cross-sectional view of the display panel in Embodiment 2; Figure 7 The results are the luminous intensity test results of the sub-pixel areas of Example 1 and existing display panels; Wherein, 1-pixel opening edge region, 2-pixel opening center region, 3-first pixel definition layer, 31-first opening, 32-second opening, 33-third opening, 4-second pixel definition layer, 51-first transparent electrode structure, 52-second transparent electrode structure, 53-third transparent electrode structure, 61-first metal connecting post, 62-second metal connecting post, 63-third metal connecting post, 71-first metal electrode structure, 72-second metal electrode structure, 73-third metal electrode structure, 8-first dielectric layer, 80-first dielectric structure, 81-second dielectric layer, 82-second dielectric structure, 83-third dielectric structure, 9-glass plate, 10-fourth dielectric structure, 11-cathode layer, 12-organic light-emitting layer, 13-encapsulation layer, 14-first planarization layer, 15-second planarization layer, 16-filter layer, 17-lens layer. Detailed Implementation

[0020] The technical solution of the present invention will be further described below with reference to the accompanying drawings.

[0021] The inventive concept includes: In current OLED designs, the pixel aperture is determined by the pixel definition layer (PDL), such as... Figure 1 As shown, due to the presence of PDL, there is a difference in OLED emission between the pixel aperture edge region 1 and the pixel aperture center region 2. The spectral characteristics of the pixel aperture center region 2 and the edge region are as follows. Figure 2 As shown, Figure 2 The solid line represents the emission spectrum of the central region, and the dashed line represents the emission spectrum of the edge region. Figure 1 and Figure 2It is evident that the central region 2 of the pixel aperture is a strong microcavity region with high luminous efficiency, while the edge region 1 of the pixel aperture has low luminous efficiency and exhibits a blue shift in the spectrum, reducing the brightness and color purity of the entire OLED luminous area. Therefore, how to avoid weak microcavity luminescence at the edge of the pixel unit and transform the effective luminous area of ​​the pixel unit into a strong microcavity luminous region has become an urgent technical problem to be solved.

[0022] Optionally, refer to Figure 3 and Figure 5 The display panel includes an array of pixel units, each pixel unit including at least three color sub-pixel areas, the at least three color sub-pixel areas including a first color sub-pixel area, a second color sub-pixel area and a third color sub-pixel area; the pixel unit includes a transparent electrode layer and a first pixel definition layer 3.

[0023] The transparent electrode layer includes a first transparent electrode structure 51 located in the first color sub-pixel region, a second transparent electrode structure 52 located in the second color sub-pixel region, and a third transparent electrode structure 53 located in the third color sub-pixel region.

[0024] The first pixel definition layer 3 is disposed on the side of the transparent electrode layer away from the substrate. The first pixel definition layer 3 has a first opening 31 that exposes the first transparent electrode structure 51, a second opening 32 that exposes the second transparent electrode structure 52, and a third opening 33 that exposes the third transparent electrode structure 53.

[0025] In this embodiment, since the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53 can be fully exposed from the first opening 31, the second opening 32, and the third opening 33 on the first pixel definition layer 3, compared with the pixel opening edge structure in the existing display panel, the horizontal distance between the edge of the projection of these transparent electrode structures on the substrate and the edge of the projection of the first pixel definition layer 3 with the corresponding opening on the substrate is effectively expanded. This avoids the problem of reduced light emission efficiency at the pixel unit opening edge caused by the small distance, so that the effective light emission area of ​​the OLED pixel unit becomes strong microcavity light emission.

[0026] Optional, see reference Figure 3 and Figure 5 The two edges of the projection of the first pixel definition layer 3 with the first opening 31 onto the substrate are the first edge and the second edge, respectively. The projection of the first transparent electrode structure 51 onto the substrate has a third side close to the first side and a fourth side close to the second side; The horizontal distance between the first side and the third side is a first value d1; the horizontal distance between the second side and the fourth side is a second value d2, and both the first value d1 and the second value d2 are greater than 0.

[0027] When both the first value d1 and the second value d2 are greater than 0, it can be ensured that the first transparent electrode structure 51 can be fully exposed from the first opening 31 on the first pixel definition layer 3 in the first color sub-pixel area, and the weak microcavity light emission of the pixel opening edge region 1 can be transformed into strong microcavity light emission by the design of the first value d1 and the second value d2 being greater than 0.

[0028] Optionally, both the first value d1 and the second value are not less than 0.1 micrometers and not greater than 0.5 micrometers.

[0029] When the first value d1 and the second value d2 are less than 0.1 μm, weak microcavity emission still exists in the effective light-emitting area of ​​the pixel unit; when the first value d1 and the second value d2 are greater than 0.5 μm, it will affect the pixel aperture and also reduce the light-emitting efficiency of the pixel unit. Therefore, when the values ​​of the first value d1 and the second value d2 are designed to be between 0.1 μm and 0.5 μm, it can convert all the weak microcavity emission in the light-emitting area into strong microcavity emission without affecting the overall light-emitting efficiency of the pixel unit.

[0030] Optionally, the first value d1 is equal to the second value d2. The equality of the first value d1 and the second value d2 ensures that the projection of the first transparent electrode structure 51 on the substrate is located in the center of the projection of the first pixel definition layer 3 with the first opening 31 on the substrate, thus ensuring that the entire light-emitting area is transformed into strong microcavity light emission.

[0031] Similarly, the corresponding arrangement of the second opening 32 with the second transparent electrode structure 52 and the third opening 33 with the third transparent electrode structure 53 is the same as that of the first opening 31 with the first transparent electrode structure 51 described above.

[0032] Optional, see reference Figure 3 and Figure 5 The display panel further includes a second pixel definition layer 4, which is disposed between the transparent electrode layer and the first pixel definition layer 3; The second pixel definition layer 4 has a fourth opening that exposes the first transparent electrode structure 51, a fifth opening that exposes the second transparent electrode structure 52, and a sixth opening that exposes the third transparent electrode structure 53; The fourth opening is larger than the first opening 31, the fifth opening is larger than the second opening 32, and the sixth opening is larger than the third opening 33.

[0033] The first pixel definition layer 3 and the second pixel definition layer 4 form an undercut structure, which is used to disconnect the film layers inside the OLED to prevent crosstalk of the light-emitting layer.

[0034] In one embodiment, such as Figure 3 and Figure 4 As shown, the thicknesses of the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53 are all equal along the direction perpendicular to the substrate.

[0035] Optional, see reference Figure 3 and Figure 4 The display panel further includes a first dielectric layer 8; The first dielectric layer 8 is disposed in the same layer as the transparent electrode layer, and the first dielectric layer 8 is located between any two of the first transparent electrode structure 51, the second transparent electrode structure 52 and the third transparent electrode structure 53.

[0036] The first dielectric layer 8 keeps the sidewalls of the transparent electrode non-conductive, while the bottom of the transparent electrode remains conductive to ensure normal operation.

[0037] Optional, see reference Figure 3 and Figure 4 The display panel further includes: The second dielectric layer 81 is disposed on the side of the transparent electrode layer near the substrate; A metal electrode layer is disposed inside the second dielectric layer 81. The metal electrode layer includes a first metal electrode structure 71 located in the first color sub-pixel region, a second metal electrode structure 72 located in the second color sub-pixel region, and a third metal electrode structure 73 located in the third color sub-pixel region. The upper surface of the first metal electrode structure 71 is lower than the second metal electrode structure 72 and higher than the third metal electrode structure 73.

[0038] In this structural design, the metal electrode layer is used to form a microcavity light-emitting structure with the cathode layer. The metal electrode layer is embedded in the second dielectric layer 81 to form a novel anode structure. Under the condition that the thickness of each transparent electrode is the same, the microcavity effect is adjusted by the thickness of the second dielectric layer 81 between the upper surface of each metal electrode and the lower surface of the corresponding transparent electrode.

[0039] In another embodiment, reference Figure 5 and Figure 6 The thickness of the first transparent electrode structure 51, the second transparent electrode structure 52 and the third transparent electrode structure 53 gradually increases along the direction perpendicular to the substrate.

[0040] Optional, see reference Figure 5 and Figure 6The display panel further includes: a first dielectric layer 8, which is disposed in the same layer as the transparent electrode layer. The first dielectric layer 8 includes a first dielectric structure 80 disposed on both sides of the first transparent electrode structure 51 and having the same thickness as the first transparent electrode structure 51, a second dielectric structure 82 disposed on both sides of the second transparent electrode structure 52 and having the same thickness as the second transparent electrode structure 52, and a third dielectric structure 83 disposed on both sides of the third transparent electrode structure 53 and having the same thickness as the third transparent electrode structure 53. A metal electrode layer is disposed on the side of the transparent electrode layer near the substrate; the metal electrode layer includes a first metal electrode structure 71 located in the first color sub-pixel region, a second metal electrode structure 72 located in the second color sub-pixel region, and a third metal electrode structure 73 located in the third color sub-pixel region; the upper surfaces of the first metal electrode structure 71, the second metal electrode structure 72, and the third metal electrode structure 73 are all located on the same plane. The fourth dielectric structure 10 is disposed between any two of the first metal electrode structure 71, the second metal electrode structure 72 and the third metal electrode structure 73.

[0041] In this design, both the first dielectric layer 8 and the fourth dielectric structure 10 are used to ensure non-conductivity between adjacent transparent electrodes or adjacent metal electrodes. The transparent electrodes are directly disposed on their corresponding metal electrodes, and the two are electrically connected. In this structure, all metal electrode structures have the same thickness, and the microcavity effect is achieved only by gradually increasing the thickness of the first transparent electrode, the second transparent electrode, and the third transparent electrode structure 53 along a direction perpendicular to the substrate.

[0042] Optional, see reference Figure 4 and Figure 6 The display panel further includes an organic light-emitting layer 12, a cathode layer 11, an encapsulation layer 13, a planarization layer (e.g., a first planarization layer 14 and a second planarization layer 15), a filter layer 16, and a lens layer 17, which are sequentially disposed on the side of the first pixel definition layer 3 away from the substrate.

[0043] Optionally, the above pixel unit structure, when combined with microlenses, can achieve higher brightness; the organic light-emitting layer 12, cathode layer 11, encapsulation layer 13, planarization layer, filter layer 16, and lens layer 17, which are disposed on the side of the first pixel definition layer 3 away from the substrate, can all be conventionally configured as needed.

[0044] Based on the above-described display panel, the present invention further discloses a display device including the above-described display panel.

[0045] Specifically, in one embodiment, the structure of the display panel is as follows: Pixel units are arranged in an array on a silicon substrate on which CMOS circuitry is fabricated. The composition of the pixel units is as follows: Figure 3 As shown, the device includes a second dielectric layer 81 disposed on a silicon substrate. The second dielectric layer 81 is made of a transparent insulating material, such as SiO or SiON. Within the second dielectric layer 81 are three non-connected metal electrode structures: a first metal electrode structure 71, a second metal electrode structure 72, and a third metal electrode structure 73. The upper surface of the first metal electrode structure 71 is lower than the second metal electrode structure 72 and higher than the third metal electrode structure 73. The first metal electrode structure 71, the second metal electrode structure 72, and the third metal electrode structure 73 are all made of materials such as Al, Ti, TiN, or Ag.

[0046] The second dielectric layer 81 is provided with a first dielectric layer 8, a first transparent electrode structure 51, a second transparent electrode structure 52, and a third transparent electrode structure 53 arranged horizontally on the same layer. The first dielectric layer 8 is disposed between any two of the first transparent electrode structures 51, the second transparent electrode structure 52, and the third transparent electrode structure 53. The material of the first dielectric layer 8 is the same as or similar to that of the second dielectric layer 81. The materials of the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53 are all transparent conductive materials, such as ITO and IZO. The thickness of the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53 is equal along the direction perpendicular to the silicon substrate.

[0047] A first metal electrode structure 71 is correspondingly located below the first transparent electrode structure 51, and the two are electrically connected through a first metal connecting post 61; a second metal electrode structure 72 is correspondingly located below the second transparent electrode structure 52, and the two are electrically connected through a first metal connecting post 61; a third metal electrode structure 73 is correspondingly located below the third transparent electrode structure 53, and the two are electrically connected through a first metal connecting post 61. The first metal connecting post 61, the second metal connecting post 62, and the third metal connecting post 63 are all located in connecting holes within the second dielectric layer 81.

[0048] Depend on Figure 3 As can be seen, the thickness of the second dielectric layer 81 between the lower surface of the first transparent electrode structure 51 and the upper surface of the first metal electrode structure 71 is greater than the thickness of the second dielectric layer 81 between the lower surface of the second transparent electrode structure 52 and the upper surface of the second metal electrode structure 72, but less than the thickness of the second dielectric layer 81 between the lower surface of the third transparent electrode structure 53 and the upper surface of the third metal electrode structure 73. The different thicknesses of the second dielectric layer 81 between the transparent electrode layer and the metal electrode layer are used to achieve the microcavity effect.

[0049] A first pixel definition layer 3 is provided on the side of the first dielectric layer 8 away from the silicon substrate. The first pixel definition layer 3 has a first opening 31 exposing the first transparent electrode structure 51, a second opening 32 exposing the second transparent electrode structure 52, and a third opening 33 exposing the third transparent electrode structure 53. The sizes of the first opening 31, the second opening 32, and the third opening 33 may be the same or different, and can be adjusted according to the electrode size required for each color. They are usually circular openings with a diameter of 2-4 μm.

[0050] The two edges of the projection of the first opening 31 onto the silicon substrate are the first edge and the second edge, respectively; the projection of the first transparent electrode structure 51 onto the substrate has a third edge near the first edge and a fourth edge near the second edge; the horizontal distance between the first edge and the third edge is a first value ( Figure 3 The distance shown in d1); the horizontal distance between the second side and the fourth side is the second value ( Figure 3 (as shown by d2 in the image). When the first and second values ​​are independently selected between 0.1 and 0.5 μm, weak cavity luminescence at the edge of the pixel unit can be avoided. When the first and second values ​​are too small, weak cavity luminescence exists in the effective light-emitting area of ​​the pixel unit; when the first and second values ​​are too large, it will affect the pixel opening.

[0051] Similarly, distances d3 and d4 are formed between the two edges of the projection of the second opening 32 onto the silicon substrate and the two edges of the projection of the second transparent electrode structure 52 onto the substrate, with d3 and d4 taking independent values ​​between 0.1 and 0.5 μm. Similarly, distances d5 and d6 are formed between the two edges of the projection of the third opening 33 onto the silicon substrate and the two edges of the projection of the third transparent electrode structure 53 onto the substrate, with d5 ​​and d6 taking independent values ​​between 0.1 and 0.5 μm.

[0052] A second pixel definition layer 4 is further provided between the first dielectric layer 8 and the first pixel definition layer 3. The second pixel definition layer 4 has a fourth opening that exposes the first transparent electrode structure 51, a fifth opening that exposes the second transparent electrode structure 52, and a sixth opening that exposes the third transparent electrode structure 53. The fourth opening is larger than the first opening 31, the fifth opening is larger than the second opening 32, and the sixth opening is larger than the third opening 33.

[0053] The first metal electrode structure 71, the first transparent electrode structure 51, the first opening 31, and the fourth opening (optional) configured as described above together constitute the first color sub-pixel region; the second metal electrode structure 72, the second transparent electrode structure 52, the second opening 32, and the fifth opening (optional) together constitute the second color sub-pixel region; the third metal electrode structure 73, the third transparent electrode structure 53, the third opening 33, and the sixth opening (optional) together constitute the third color sub-pixel region. The first color sub-pixel region, the second color sub-pixel region, and the third color sub-pixel region together constitute the pixel unit in this embodiment. More sub-pixel regions of different colors can be added to this pixel unit as needed, configured in a similar manner as described above.

[0054] like Figure 4 As shown, on the side of the first transparent electrode structure 51, the first dielectric layer 8, and the first pixel definition layer 3 away from the silicon substrate, an organic light-emitting layer 12, a cathode layer 11, an encapsulation layer 13, a first planarization layer 14, a filter layer 16, a lens layer 17, a second planarization layer 15, and a glass plate 9 are sequentially disposed. The filter layer 16 is composed of different color filters corresponding to the first, second, and third color sub-pixel regions, respectively, with different color filters disposed on the same layer. Each color filter is provided with a microlens, which can further improve the overall brightness of the OLED display panel. The second planarization layer 15 is disposed on the microlens, and the glass plate 9 is disposed on the second planarization layer 15.

[0055] The relationship between the emission wavelength of the OLED pixel and the transparent electrode layer and the second dielectric layer 81 is as follows: 2 × (Transparent electrode thickness × Transparent electrode refractive index + Second dielectric layer 81 thickness × Second dielectric layer 81 refractive index + Organic light-emitting layer 12 thickness × Organic light-emitting layer 12 refractive index) + Anode reflection phase shift + Cathode reflection phase shift = k × OLED emission wavelength; Where k is a positive integer, the transparent electrode is a first transparent electrode structure 51 or a second transparent electrode structure 52 or a third transparent electrode structure 53, and the OLED emission wavelength is 460nm, 530nm, 620nm, etc.

[0056] Based on this relationship and material, the thickness of the transparent electrode structure and the second dielectric layer 81 can be adjusted as needed.

[0057] In another embodiment, the display panel has the following structure: Pixel units are arranged in an array on a silicon substrate on which CMOS circuitry is fabricated. The composition of the pixel units is as follows: Figure 5As shown, the structure includes a first metal electrode structure 71, a second metal electrode structure 72, and a third metal electrode structure 73 disposed on a silicon substrate. The upper surfaces of the first metal electrode structure 71, the second metal electrode structure 72, and the third metal electrode structure 73 are all located on the same plane. The first metal electrode structure 71, the second metal electrode structure 72, and the third metal electrode structure 73 are all made of materials such as Al, Ti, TiN, and Ag.

[0058] A fourth dielectric structure 10 is provided between any two of the first metal electrode structure 71, the second metal electrode structure 72 and the third metal electrode structure 73. A first transparent electrode structure 51 is directly electrically connected to a first metal electrode structure 71, a second transparent electrode structure 52 is directly electrically connected to a second metal electrode structure 72, and a third transparent electrode structure 53 is directly electrically connected to a third metal electrode structure 73. The thickness of the first transparent electrode structure 51 perpendicular to the silicon substrate is less than the thickness of the second transparent electrode structure 52 perpendicular to the silicon substrate, which in turn is less than the thickness of the third transparent electrode structure 53 perpendicular to the silicon substrate. Due to the different thicknesses of the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53, a microcavity effect can be achieved. The materials of the first transparent electrode structure 51, the second transparent electrode structure 52, and the third transparent electrode structure 53 are all transparent conductive materials, such as ITO and IZO.

[0059] The first transparent electrode structure 51 has a first dielectric structure 80 with the same thickness as the first transparent electrode structure 51 on both sides, and the first dielectric structure 80 and the first transparent electrode structure 51 are disposed in the same layer; the second transparent electrode structure 52 has a second dielectric structure 82 with the same thickness as the second transparent electrode structure 52 on both sides, and the second dielectric structure 82 and the second transparent electrode structure 52 are disposed in the same layer; the third transparent electrode structure 53 has a third dielectric structure 83 with the same thickness as the third transparent electrode structure 53 on both sides, and the third dielectric structure 83 and the third transparent electrode structure 53 are disposed in the same layer. The first dielectric structure, the second dielectric structure, the third dielectric structure, and the fourth dielectric structure 10 are made of transparent insulating materials, such as SiO and SiON. A first pixel definition layer 3 is provided on the side of the first dielectric structure 80, the second dielectric structure 82, the third dielectric structure 83, and the fourth dielectric structure 10 away from the silicon substrate.

[0060] The first pixel definition layer 3 has a first opening 31 that exposes a first transparent electrode, a second opening 32 that exposes a second transparent electrode, and a third opening 33 that exposes a third transparent electrode.

[0061] The two edges of the projection of the first opening 31 onto the silicon substrate are the first edge and the second edge, respectively; the projection of the first transparent electrode structure 51 onto the substrate has a third edge near the first edge and a fourth edge near the second edge; the horizontal distance between the first edge and the third edge is a first value ( Figure 5 The distance shown in d1); the horizontal distance between the second side and the fourth side is the second value ( Figure 5 (as shown in d2), when the first and second values ​​are independently selected between 0.1 and 0.5 μm, weak microcavity luminescence at the edge of the pixel unit can be avoided.

[0062] Similarly, distances d3 and d4 are formed between the two edges of the projection of the second opening 32 onto the silicon substrate and the two edges of the projection of the second transparent electrode onto the substrate, with d3 and d4 taking independent values ​​between 0.1 and 0.5 μm. Similarly, distances d5 and d6 are formed between the two edges of the projection of the third opening 33 onto the silicon substrate and the two edges of the projection of the third transparent electrode onto the substrate, with d5 ​​and d6 taking independent values ​​between 0.1 and 0.5 μm.

[0063] A second pixel definition layer 4 is further provided between the first dielectric layer 8 and the first pixel definition layer 3. The second pixel definition layer 4 has a fourth opening that exposes the first transparent electrode, a fifth opening that exposes the second transparent electrode, and a sixth opening that exposes the third transparent electrode. The fourth opening is larger than the first opening 31, the fifth opening is larger than the second opening 32, and the sixth opening is larger than the third opening 33.

[0064] The first metal electrode structure 71, the first transparent electrode structure 51, the first opening 31, and the fourth opening (optional) configured as described above together constitute the first color sub-pixel region; the second metal electrode structure 72, the second transparent electrode structure 52, the second opening 32, and the fifth opening (optional) together constitute the second color sub-pixel region; the third metal electrode structure 73, the third transparent electrode structure 53, the third opening 33, and the sixth opening (optional) together constitute the third color sub-pixel region. The first color sub-pixel region, the second color sub-pixel region, and the third color sub-pixel region together constitute the pixel unit in this embodiment. More sub-pixel regions of different colors can be added to this pixel unit as needed, configured in a similar manner as described above.

[0065] like Figure 6As shown, an organic light-emitting layer 12, a cathode layer 11, an encapsulation layer 13, a first planarization layer 14, a filter layer 16, a lens layer 17, a second planarization layer 15, and a glass plate 9 are sequentially disposed on the side of the first transparent electrode, the first dielectric layer 8, and the first pixel definition layer 3 away from the silicon substrate. The filter layer 16 is composed of different color filters corresponding to the first, second, and third color sub-pixel regions, respectively, with different color filters disposed on the same layer. Each color filter is provided with a microlens, which can further improve the overall brightness of the OLED display panel. The second planarization layer 15 is disposed on the microlens, and the glass plate 9 is disposed on the second planarization layer 15.

[0066] The relationship between the emission wavelength of an OLED pixel and the transparent electrode layer is as follows: 2 × (thickness of transparent electrode × refractive index of transparent electrode + thickness of organic light-emitting layer × refractive index of organic light-emitting layer) + anode reflection phase shift + cathode reflection phase shift = k × emission wavelength; Where k is a positive integer, the transparent electrode is the first transparent electrode 51 or the second transparent electrode 52 or the third transparent electrode 53, and the OLED emission wavelength is 460nm, 530nm, 620nm, etc. The luminance of the sub-pixel area in the pixel unit of the test embodiment 1 and the existing display panel are as follows: Figure 7 As shown, Figure 7 The circular dot curve is Example 1, and the square dot curve is... Figure 1 The existing display panel with the shown sub-pixel area structure. Figure 7 As can be seen, the luminance of existing display panels decreases at the pixel edges, while in this invention, the luminance at the pixel edges is consistent with the luminance in the pixel center area, which significantly improves the problem of decreased luminous efficiency at the pixel edges.

Claims

1. A display panel, characterized in that, The array comprises pixel units, each pixel unit including at least three color sub-pixel regions, the at least three color sub-pixel regions including a first color sub-pixel region, a second color sub-pixel region, and a third color sub-pixel region: The pixel unit includes: A transparent electrode layer, the transparent electrode layer comprising a first transparent electrode structure located in a first color sub-pixel region, a second transparent electrode structure located in a second color sub-pixel region, and a third transparent electrode structure located in a third color sub-pixel region; A first pixel definition layer is disposed on the side of the transparent electrode layer away from the substrate. The first pixel definition layer has a first opening that exposes the first transparent electrode structure, a second opening that exposes the second transparent electrode structure, and a third opening that exposes the third transparent electrode structure.

2. The display panel according to claim 1, characterized in that, The two edges of the projection of the first pixel definition layer with the first opening onto the substrate are the first edge and the second edge, respectively. The projection of the first transparent electrode structure onto the substrate has a third side close to the first side and a fourth side close to the second side; The horizontal distance between the first side and the third side is a first value; the horizontal distance between the second side and the fourth side is a second value, and both the first value and the second value are greater than 0.

3. The display panel according to claim 2, characterized in that, Both the first value and the second value are not less than 0.1 micrometers and not greater than 0.5 micrometers.

4. The display panel according to claim 2, characterized in that, The first value is equal to the second value.

5. The display panel according to claim 1, characterized in that, The display panel further includes a second pixel definition layer, which is disposed between the transparent electrode layer and the first pixel definition layer; The second pixel definition layer has a fourth opening that exposes the first transparent electrode structure, a fifth opening that exposes the second transparent electrode structure, and a sixth opening that exposes the third transparent electrode structure; The fourth opening is larger than the first opening, the fifth opening is larger than the second opening, and the sixth opening is larger than the third opening.

6. The display panel according to any one of claims 1-5, characterized in that, The thicknesses of the first transparent electrode structure, the second transparent electrode structure, and the third transparent electrode structure are all equal along the direction perpendicular to the substrate.

7. The display panel according to claim 6, characterized in that, The display panel further includes a first dielectric layer; The first dielectric layer is disposed in the same layer as the transparent electrode layer, and the first dielectric layer is located between any two of the first transparent electrode structure, the second transparent electrode structure and the third transparent electrode structure.

8. The display panel according to claim 6, characterized in that, The display panel also includes: The second dielectric layer is disposed on the side of the transparent electrode layer near the substrate; A metal electrode layer is disposed inside the second dielectric layer. The metal electrode layer includes a first metal electrode structure located in the first color sub-pixel region, a second metal electrode structure located in the second color sub-pixel region, and a third metal electrode structure located in the third color sub-pixel region. The upper surface of the first metal electrode structure is lower than the second metal electrode structure and higher than the third metal electrode structure.

9. The display panel according to any one of claims 1-5, characterized in that, The thickness of the first transparent electrode, the second transparent electrode, and the third transparent electrode gradually increases along the direction perpendicular to the substrate.

10. The display panel according to claim 9, characterized in that, The display panel further includes: a first dielectric layer, which is disposed in the same layer as the transparent electrode layer. The first dielectric layer includes a first dielectric structure disposed on both sides of the first transparent electrode and having the same thickness as the first transparent electrode, a second dielectric structure disposed on both sides of the second transparent electrode and having the same thickness as the second transparent electrode, and a third dielectric structure disposed on both sides of the third transparent electrode and having the same thickness as the third transparent electrode. A metal electrode layer is disposed on the side of the transparent electrode layer near the substrate; the metal electrode layer includes a first metal electrode structure located in the first color sub-pixel region, a second metal electrode structure located in the second color sub-pixel region, and a third metal electrode structure located in the third color sub-pixel region; the upper surfaces of the first metal electrode structure, the second metal electrode structure, and the third metal electrode structure are all located on the same plane; The fourth dielectric structure is disposed between any two of the first metal electrode structure, the second metal electrode structure, and the third metal electrode structure.

11. The display panel according to claim 1, characterized in that, The display panel further includes an organic light-emitting layer, a cathode layer, an encapsulation layer, a planarization layer, a filter layer, and a lens layer, which are sequentially disposed on the side of the first pixel definition layer away from the substrate.

12. A display device, characterized in that, The display panel includes any one of claims 1-11.

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