Photoetching developing method and device

Abstract

The invention discloses a photoetching developing method, which comprises the following steps of: developing a wafer coated with photoresist and exposed by spraying a developing solution to the surface of the wafer through a nozzle and rotating the wafer. In the developing process, the PH value of the developing solution at each monitoring position on the surface of the wafer is monitored in real time, and PH value distribution in the surface of the wafer is obtained in real time. The development is dynamically adjusted according to the PH value distribution, the dynamic adjustment is realized by adjusting the spraying position of the nozzle and / or adjusting the rotating speed of the wafer, and the dynamic adjustment is used for adjusting the distribution of the developing solution, so that the uniformity of the PH value distribution in the wafer surface is increased and tends to be consistent, and the line width uniformity of the photoresist on the wafer surface is improved. The invention also discloses a photoetching developing device. According to the invention, the uniformity of in-plane development of the wafer can be improved, so that the line width uniformity of the photoresist is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor integrated circuit manufacturing, and particularly to a method for photolithography and development. This invention also relates to an apparatus for photolithography and development. Background Technology

[0002] Current development methods involve spraying developer solution onto the center of the wafer through a developing nozzle while the wafer rotates on a stage, using centrifugal force to spread the developer solution across the wafer surface. As the wafer surface moves away from the center, variations in centrifugal force result in uneven radial distribution of the developer solution. Furthermore, differences in the pattern layout of different exposure layers and variations in the reaction rate between the photoresist and the developer solution lead to poor uniformity of the pattern linewidth within the wafer surface. Additionally, localized overdevelopment or underdevelopment can easily cause development defects.

[0003] Current development methods involve spraying developer solution onto the center of the wafer through a developing nozzle while the wafer rotates on a stage, using centrifugal force to spread the developer solution across the wafer surface. As the wafer surface moves away from the center, variations in centrifugal force result in uneven radial distribution of the developer solution. Furthermore, differences in the pattern layout of different exposure layers and variations in the reaction rate between the photoresist and the developer solution lead to poor uniformity of the pattern linewidth within the wafer surface. Additionally, localized overdevelopment or underdevelopment can easily cause development defects.

[0004] like Figure 1 The diagram shown is a schematic diagram of the structure of a developing unit in an existing photolithography developing apparatus; The developing unit is the unit of the area enclosed by the sidewall 101.

[0005] The developing unit is provided with a nozzle 104 for spraying developing solution 105 onto the surface of the wafer 102 after it has been coated with photoresist and exposed.

[0006] A rotating device is used to rotate the wafer 102. Typically, the wafer 102 is placed on a workpiece stage, and the rotating device drives the workpiece stage to rotate, thereby rotating the wafer 102. Figure 1 The rotating arrow 103 indicates that the wafer 102 is rotated.

[0007] Depend on Figure 1 As can be seen, the nozzle 104 sprays the developer 105 towards the center region of the wafer 102, and the developer 105 moves towards the edge region of the wafer 102 under the centrifugal force generated by rotation. However, in the existing method, there is a defect that the distribution of the developer 105 varies with the distance from the center of the wafer, which will result in poor uniformity of the pattern linewidth within the wafer surface. Summary of the Invention

[0008] The technical problem to be solved by the present invention is to provide a photolithography development method that can improve the uniformity of development within the wafer plane, thereby improving the linewidth uniformity of the photoresist. To this end, the present invention also provides a photolithography development apparatus.

[0009] To solve the above-mentioned technical problems, the photolithography development method provided by the present invention includes the following steps: The wafer, after being coated with photoresist and exposed, is developed by spraying developing solution onto the surface of the wafer through a nozzle and by rotating the wafer.

[0010] During the development process, the pH value of the developing solution at each monitoring position on the wafer surface is monitored in real time, and the pH value distribution within the wafer surface is obtained in real time.

[0011] The developing solution is dynamically adjusted according to the pH value distribution. The dynamic adjustment is achieved by adjusting the spray position of the nozzle and / or adjusting the rotation speed of the wafer. The dynamic adjustment is used to adjust the distribution of the developing solution and thereby increase the uniformity of the pH value distribution on the wafer surface and make it more consistent, so as to improve the linewidth uniformity of the photoresist on the wafer surface.

[0012] A further improvement is that the developing process is performed in a developing unit.

[0013] A further improvement is that the real-time monitoring is implemented using a pH monitoring device, which includes: A light emitter is used to emit monitoring light at the monitoring position corresponding to the wafer surface, wherein the wavelength of the monitoring light does not cause a photochemical reaction with the photoresist.

[0014] An optical pH meter is used to receive the monitoring light reflected from the wafer surface and to calculate the pH value of the developer.

[0015] A monitoring unit is formed by one of the light emitters and one of the optical pH meters to achieve real-time monitoring of the pH value at one of the monitoring locations on the wafer surface.

[0016] A further improvement is that the pH value distribution includes the pH value distribution at at least three monitoring locations, and the number of monitoring units is the same as the number of monitoring locations; the three monitoring locations are: the edge region, the half-radius region, and the center region.

[0017] A further improvement is that the wavelength range of the monitoring light is 4000 Å to 9000 Å.

[0018] A further improvement is that, during the development process, when the hydrogen ion concentration changes, the potential difference also changes accordingly, thereby affecting the light transmittance and scattering rate. The optical pH meter determines the pH value by measuring the change in the light signal of the monitoring light.

[0019] A further improvement is that, in the pH value distribution curve, the magnitude of the pH value is related to the amount of developer distributed, with less developer distributed in areas of lower pH value and more developer distributed in areas of higher pH value. The dynamic adjustment increases the uniformity of the pH value distribution within the wafer surface by increasing the amount of developer distributed in areas of lower pH value and / or decreasing the amount of developer distributed in areas of higher pH value.

[0020] A further improvement is that the number of nozzles includes one.

[0021] A further improvement is that, at the start of the development process, the nozzle is aligned with the central region of the wafer.

[0022] A further improvement is that, in the dynamic adjustment, when the pH value distribution is detected to be a curve with a high center and a low edge, the nozzle is moved outward to increase the amount of developer distributed in the edge region of the wafer and decrease the amount of developer distributed in the center region of the wafer.

[0023] To solve the above-mentioned technical problems, the photolithography developing apparatus provided by the present invention includes: A nozzle is used to spray developing solution onto the surface of a wafer that has been coated with photoresist and exposed.

[0024] A rotating device for rotating the wafer.

[0025] A pH monitoring device is used to monitor the pH value of the developer at various monitoring positions on the wafer surface in real time during the development process and to obtain the pH value distribution within the wafer surface in real time.

[0026] A dynamic adjustment control device is used to achieve: dynamic adjustment of the developing solution according to the pH value distribution, wherein the dynamic adjustment is achieved by adjusting the spray position of the nozzle and / or adjusting the rotation speed of the wafer, and the dynamic adjustment is used to adjust the distribution of the developing solution and thereby increase the uniformity of the pH value distribution in the wafer surface and make it more consistent, so as to improve the linewidth uniformity of the photoresist on the wafer surface.

[0027] A further improvement is that the nozzle, the rotating device, and the pH monitoring device are all located in the developing unit, and the dynamic adjustment control device is implemented through software or hardware.

[0028] A further improvement is that the pH monitoring device includes: A light emitter is used to emit monitoring light at the monitoring position corresponding to the wafer surface, wherein the wavelength of the monitoring light does not cause a photochemical reaction with the photoresist.

[0029] An optical pH meter is used to receive the monitoring light reflected from the wafer surface and to calculate the pH value of the developer.

[0030] A monitoring unit is formed by one of the light emitters and one of the optical pH meters to achieve real-time monitoring of the pH value at one of the monitoring locations on the wafer surface.

[0031] A further improvement is that the pH value distribution includes the pH value distribution at at least three monitoring locations, and the number of monitoring units is the same as the number of monitoring locations; the three monitoring locations are: the edge region, the half-radius region, and the center region.

[0032] A further improvement is that the wavelength range of the monitoring light is 4000 Å to 9000 Å.

[0033] A further improvement is that, in the pH value distribution curve, the magnitude of the pH value is related to the amount of developer distributed, with less developer distributed in areas of lower pH value and more developer distributed in areas of higher pH value. The dynamic adjustment increases the uniformity of the pH value distribution within the wafer surface by increasing the amount of developer distributed in areas of lower pH value and / or decreasing the amount of developer distributed in areas of higher pH value.

[0034] This invention, based on the spraying of developer solution through nozzles and the rotation of the wafer, adds a step of real-time monitoring of the pH value of the developer solution at various locations on the wafer surface and forming a pH value distribution. By utilizing the correspondence between pH value and the distribution amount of developer solution, the distribution amount of developer solution at each location can be adjusted according to the pH value distribution. The distribution amount of developer solution can be dynamically adjusted by adjusting the nozzle spraying position and the rotation speed of the wafer. Therefore, dynamic adjustment can improve the uniformity of developer solution distribution, and the uniformity of pH value distribution on the wafer surface is also increased and tends to be consistent. Finally, it can improve the linewidth uniformity of photoresist on the wafer surface. Attached Figure Description

[0035] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments: Figure 1 This is a schematic diagram of the structure of a developing unit in an existing photolithography developing apparatus; Figure 2It is a pH value distribution curve at various moments during the development process of existing photolithography development methods; Figure 3 This is a flowchart of the photolithography development method according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a developing unit of the photolithography developing apparatus according to an embodiment of the present invention; Figure 5 This is a pH value distribution curve at various moments during the photolithography development method of this invention. Detailed Implementation

[0036] like Figure 3 The diagram shown is a flowchart of the photolithography development method according to an embodiment of the present invention; as shown Figure 4 The diagram shown is a structural schematic of a developing unit in the photolithography developing apparatus of this embodiment of the invention. For the corresponding apparatus in the photolithography developing method of this embodiment of the invention, please refer to... Figure 4 As shown, the photolithography development method of this invention includes the following steps: Step S101: Develop the wafer 102 after it has been coated with photoresist and exposed. This development is achieved by spraying developer 105 onto the surface of the wafer 102 through nozzle 104 and by rotating the wafer 102. After the developer 105 is sprayed onto the surface of the wafer 102 through nozzle 104, the rotation of the wafer 102, through centrifugal force, distributes the developer 105 to various areas of the wafer 102. Thus, when the developer 105 comes into contact with the photoresist, it reacts with the photoresist, achieving the development process. This development process continues until the photoresist is patterned according to the exposed pattern.

[0037] In this embodiment of the invention, the developing process is implemented in a developing unit. Figure 4 In this context, the developing unit is the unit within the area enclosed by the sidewall 101.

[0038] Step S102: During the development process, the pH value of the developer 105 at each monitoring position on the surface of the wafer 102 is monitored in real time, and the pH value distribution within the surface of the wafer 102 is obtained in real time.

[0039] In this embodiment of the invention, the real-time monitoring is implemented using a pH monitoring device, which includes: The light emitter 106 is used to emit a monitoring light 107a to the monitoring position corresponding to the surface of the wafer 102, wherein the wavelength of the monitoring light 107a is such that it does not undergo a photochemical reaction with the photoresist.

[0040] In some embodiments, the wavelength range of the monitoring light 107a is 4000 Å to 9000 Å.

[0041] An optical pH meter 108 is used to receive the monitoring light 107b reflected from the surface of the wafer 102 and to calculate the pH value of the developer 105.

[0042] In this embodiment of the invention, during the development process, when the hydrogen ion concentration changes, the potential difference also changes accordingly, thereby affecting the light transmittance and scattering rate. The optical pH meter 108 determines the pH value by measuring the change in the light signal of the monitoring light 107b.

[0043] A monitoring unit is formed by one of the light emitters 106 and one of the optical pH meters 108 to realize real-time monitoring of the pH value at one of the monitoring locations on the surface of the wafer 102.

[0044] In this embodiment of the invention, the pH value distribution includes the pH value distribution at at least three monitoring locations, and the number of monitoring units is the same as the number of monitoring locations; the three monitoring locations are: the edge region, the half-radius region, and the center region.

[0045] like Figure 5 The figure shows the pH value distribution curves at various moments during the photolithography development process according to an embodiment of the present invention. Figure 5 In this context, "center" corresponds to the central region, "donut" corresponds to the half-radius region, and "edge" corresponds to the edge region.

[0046] Step S103: Dynamically adjust the developing solution according to the pH value distribution. The dynamic adjustment is achieved by adjusting the spray position of the nozzle 104 and / or adjusting the rotation speed of the wafer 102. The dynamic adjustment is used to adjust the distribution of the developing solution 105 and thereby increase the uniformity of the pH value distribution on the surface of the wafer 102 and make it more consistent, so as to improve the linewidth uniformity of the photoresist on the surface of the wafer 102.

[0047] The dynamic adjustment can be achieved by adjusting the spray position of the nozzle 104 individually, adjusting the rotation speed of the wafer 102 individually, or adjusting both the spray position of the nozzle 104 and the rotation speed of the wafer 102 simultaneously.

[0048] In this embodiment of the invention, since development is achieved through an acid-base neutralization reaction, the uniformity of development can be reflected by the pH value distribution within the wafer surface. In the pH value distribution curve, the magnitude of the pH value is related to the amount of developer 105 distributed; the amount of developer 105 is less in areas with lower pH values ​​and more in areas with higher pH values. The dynamic adjustment increases the uniformity of the pH value distribution within the wafer 102 surface by increasing the amount of developer 105 distributed in areas with lower pH values ​​and / or decreasing the amount of developer 105 distributed in areas with higher pH values.

[0049] In this embodiment of the invention, the number of nozzles 104 includes one.

[0050] When the development begins, the nozzle 104 is aligned with the central region of the wafer 102.

[0051] In the dynamic adjustment, when the pH value distribution is detected to be a curve with high value in the middle and low value at the edges, the nozzle 104 is moved outward to increase the amount of developer 105 distributed in the edge region of the wafer 102 and decrease the amount of developer 105 distributed in the central region of the wafer 102.

[0052] This embodiment of the invention, based on spraying developer 105 through nozzle 104 and rotating wafer 102, adds a step of real-time monitoring of the pH value of developer 105 at various locations on the surface of wafer 102 and forming a pH value distribution. Utilizing the correspondence between pH value and the distribution amount of developer 105, the distribution amount of developer 105 at each location can be adjusted according to the pH value distribution. The distribution amount of developer 105 can be dynamically adjusted by adjusting the spraying position of nozzle 104 and the rotation speed of wafer 102. Therefore, dynamic adjustment can improve the uniformity of developer 105 distribution, and the uniformity of pH value distribution within the surface of wafer 102 is also increased and tends to be consistent. Finally, it can improve the linewidth uniformity of photoresist on the surface of wafer 102.

[0053] like Figure 2 The figure shows the pH value distribution curves at various moments during the development process in existing photolithography development methods. Existing photolithography development methods do not perform the aforementioned dynamic adjustments. However, by using the monitoring unit described in this embodiment of the invention to monitor the pH value at each moment in real time, the pH value can be obtained... Figure 2The corresponding pH distribution curves over time show that between times T1 and T4, the pH values ​​of the central and edge regions differ significantly. As time increases further, for example, at times T5 and T6, the pH values ​​of the central and edge regions become more similar. That is, starting at time T1, because the developer is initially sprayed at the center, the concentration of developer is higher, resulting in a faster acid-base neutralization reaction and a higher pH value at the center than at the edge. As time progresses, the crystal edges are gradually covered by the developer, and the corresponding pH value gradually increases (T2-T6).

[0054] For the methods of the embodiments of the present invention, such as Figure 5 As shown, at time T101, the pH value distribution curve is high in the middle and low at the edges, but it is lower than... Figure 2 The uniformity at time T1 should be good; based on the pH distribution curve obtained at time T101, the dynamic adjustment can increase the developer 105 in the edge region, which can be achieved by moving the nozzle 104 outward. At time T102, the uniformity of the pH distribution increases, and as time further increases, such as from time T103 to T106, the difference in pH value between the central and edge regions of the pH distribution gradually decreases, and the uniformity gradually increases. Therefore, when monitoring... Figure 2 When the curve corresponds to time T1, the existing method does not make dynamic adjustments and does not have a means to detect the pH value distribution; however, in the embodiment of the present invention, the dynamic adjustment can be made. As can be seen from the curve of time T1, there is more developer in the center at this time. By moving the nozzle of the developer outward, the developer in the center of the wafer can be reduced and the developer in the edge area of ​​the wafer can be increased, thereby achieving the effect of uniform development within the wafer surface.

[0055] Therefore, corresponding to existing methods Figure 2 In contrast, in this embodiment of the invention, when the pH value distribution curve at time T1 is detected, the dynamic adjustment is immediately performed to increase the distribution amount of the developer 105 in the edge region and increase the pH value in the edge region. Subsequently, from time T2 to T6, after the dynamic adjustment of this embodiment of the invention, the uniformity of the pH value distribution curve will increase.

[0056] like Figure 4 As shown, the photolithography developing apparatus of this embodiment includes: Nozzle 104 is used to spray developer 105 onto the surface of wafer 102 after it has been coated with photoresist and exposed.

[0057] A rotating device is used to rotate the wafer 102.

[0058] A pH monitoring device is used to monitor the pH value of the developer 105 at each monitoring position on the surface of the wafer 102 in real time during the development process and to obtain the pH value distribution within the surface of the wafer 102 in real time.

[0059] A dynamic adjustment control device is used to dynamically adjust the developing solution according to the pH value distribution. This dynamic adjustment is achieved by adjusting the spray position of the nozzle 104 and / or adjusting the rotational speed of the wafer 102. The dynamic adjustment is used to regulate the distribution of the developer 105, thereby increasing and unifying the uniformity of the pH value distribution on the surface of the wafer 102, thus improving the linewidth uniformity of the photoresist on the surface of the wafer 102. This dynamic adjustment can be achieved by adjusting the spray position of the nozzle 104 individually, adjusting the rotational speed of the wafer 102 individually, or simultaneously adjusting both the spray position of the nozzle 104 and the rotational speed of the wafer 102.

[0060] The nozzle 104, the rotating device, and the pH monitoring device are all located in the developing unit. The dynamic adjustment control device is implemented through software or hardware. In some embodiments, when a developing machine has multiple developing units, each developing unit can share the same dynamic adjustment control device.

[0061] In this embodiment of the invention, the pH monitoring device includes: The light emitter 106 is used to emit a monitoring light 107a to the monitoring position corresponding to the surface of the wafer 102, wherein the wavelength of the monitoring light 107a is such that it does not undergo a photochemical reaction with the photoresist.

[0062] An optical pH meter 108 is used to receive the monitoring light 107b reflected from the surface of the wafer 102 and to calculate the pH value of the developer 105.

[0063] A monitoring unit is formed by one of the light emitters 106 and one of the optical pH meters 108 to realize real-time monitoring of the pH value at one of the monitoring locations on the surface of the wafer 102.

[0064] The pH value distribution includes the pH value distribution at at least three monitoring locations. The number of monitoring units is the same as the number of monitoring locations, i.e., three monitoring units are included. The three monitoring locations are: the edge region, the half-radius region, and the center region.

[0065] In some embodiments, the wavelength range of the monitoring light 107a is 4000 Å to 9000 Å.

[0066] In the pH value distribution curve, the pH value is related to the amount of developer 105 distributed. The amount of developer 105 distributed in the region with lower pH value is less, and the amount of developer 105 distributed in the region with higher pH value is more. The dynamic adjustment increases the uniformity of the pH value distribution on the wafer 102 surface by increasing the amount of developer 105 distributed in the region with lower pH value and / or decreasing the amount of developer 105 distributed in the region with higher pH value.

[0067] In this embodiment of the invention, by dynamically adjusting the wafer rotation speed and the developer nozzle movement through the pH distribution within the wafer surface, it is possible to ensure uniform reaction between the photoresist photoacid and the developer within the wafer surface, avoiding local overdevelopment or underdevelopment, and improving the uniformity of pattern linewidth and product defects.

[0068] The present invention has been described in detail above through specific embodiments, but these are not intended to limit the invention. Many modifications and improvements can be made by those skilled in the art without departing from the principles of the invention, and these should also be considered within the scope of protection of the present invention.

Claims

1. A method for photolithographic development, characterized in that, Including the following steps: The wafer coated with photoresist and exposed is developed by spraying developing solution onto the surface of the wafer through a nozzle and rotating the wafer. During the development process, the pH value of the developing solution at each monitoring position on the wafer surface is monitored in real time, and the pH value distribution within the wafer surface is obtained in real time. The developing solution is dynamically adjusted according to the pH value distribution. The dynamic adjustment is achieved by adjusting the spray position of the nozzle and / or adjusting the rotation speed of the wafer. The dynamic adjustment is used to adjust the distribution of the developing solution and thereby increase the uniformity of the pH value distribution on the wafer surface and make it more consistent, so as to improve the linewidth uniformity of the photoresist on the wafer surface.

2. The photolithography development method as described in claim 1, characterized in that: The development is performed in the developing unit.

3. The photolithography development method as described in claim 1, characterized in that: The real-time monitoring is achieved using a pH monitoring device, which includes: A light emitter is used to emit monitoring light to the monitoring position corresponding to the wafer surface, wherein the wavelength of the monitoring light does not cause a photochemical reaction with the photoresist; An optical pH meter is used to receive the monitoring light reflected from the wafer surface and to calculate the pH value of the developer. A monitoring unit is formed by one of the light emitters and one of the optical pH meters to achieve real-time monitoring of the pH value at one of the monitoring locations on the wafer surface.

4. The photolithography development method as described in claim 3, characterized in that: The pH value distribution includes the pH value distribution at at least three monitoring locations, and the number of monitoring units is the same as the number of monitoring locations; the three monitoring locations are: the edge region, the half-radius region, and the center region.

5. The photolithography development method as described in claim 3, characterized in that: The wavelength range of the monitoring light is 4000 Å to 9000 Å.

6. The photolithography development method as described in claim 3, characterized in that: During the development process, when the hydrogen ion concentration changes, the potential difference also changes accordingly, thereby affecting the light transmittance and scattering rate. The optical pH meter determines the pH value by measuring the change in the light signal of the monitoring light.

7. The photolithography development method as described in claim 1, characterized in that: In the pH value distribution curve, the pH value is related to the amount of developer distributed. The amount of developer distributed in the region with lower pH value is less, and the amount of developer distributed in the region with higher pH value is more. The dynamic adjustment increases the uniformity of the pH value distribution on the wafer surface by increasing the amount of developer distributed in the region with lower pH value and / or decreasing the amount of developer distributed in the region with higher pH value.

8. The photolithography development method as described in claim 7, characterized in that: The number of nozzles includes one.

9. The photolithography development method as described in claim 8, characterized in that: When the development begins, the nozzle is aligned with the center region of the wafer.

10. The photolithography development method as described in claim 9, characterized in that: In the dynamic adjustment, when the pH value distribution is detected to be a curve with high values ​​in the middle and low values ​​at the edges, the nozzle is moved outward to increase the amount of developer distributed in the edge region of the wafer and decrease the amount of developer distributed in the center region of the wafer.

11. An apparatus for photolithography development, characterized in that, include: A nozzle is used to spray developing solution onto the surface of a wafer that has been coated with photoresist and exposed to light. A rotating device for rotating the wafer; A pH monitoring device is used to monitor the pH value of the developing solution at each monitoring position on the wafer surface in real time during the developing process and to obtain the pH value distribution within the wafer surface in real time. A dynamic adjustment control device is used to achieve: dynamic adjustment of the developing solution according to the pH value distribution, wherein the dynamic adjustment is achieved by adjusting the spray position of the nozzle and / or adjusting the rotation speed of the wafer, and the dynamic adjustment is used to adjust the distribution of the developing solution and thereby increase the uniformity of the pH value distribution in the wafer surface and make it more consistent, so as to improve the linewidth uniformity of the photoresist on the wafer surface.

12. The photolithography developing apparatus as described in claim 11, characterized in that: The nozzle, the rotating device, and the pH monitoring device are all located in the developing unit, and the dynamic adjustment control device is implemented through software or hardware.

13. The photolithography developing apparatus as described in claim 11, characterized in that: The pH monitoring device includes: A light emitter is used to emit monitoring light to the monitoring position corresponding to the wafer surface, wherein the wavelength of the monitoring light does not cause a photochemical reaction with the photoresist; An optical pH meter is used to receive the monitoring light reflected from the wafer surface and to calculate the pH value of the developer. A monitoring unit is formed by one of the light emitters and one of the optical pH meters to achieve real-time monitoring of the pH value at one of the monitoring locations on the wafer surface.

14. The photolithography developing apparatus as described in claim 13, characterized in that: The pH value distribution includes the pH value distribution at at least three monitoring locations, and the number of monitoring units is the same as the number of monitoring locations; the three monitoring locations are: the edge region, the half-radius region, and the center region.

15. The photolithography developing apparatus as described in claim 13, characterized in that: The wavelength range of the monitoring light is 4000 Å to 9000 Å.

16. The photolithography developing apparatus as described in claim 11, characterized in that: In the pH value distribution curve, the pH value is related to the amount of developer distributed. The amount of developer distributed in the region with lower pH value is less, and the amount of developer distributed in the region with higher pH value is more. The dynamic adjustment increases the uniformity of the pH value distribution on the wafer surface by increasing the amount of developer distributed in the region with lower pH value and / or decreasing the amount of developer distributed in the region with higher pH value.

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