Multi-chamber wafer transfer control method, system and electronic device based on fcvd equipment

Abstract

The application provides a multi-chamber wafer transfer control method and system based on an FCVD device, and an electronic device. The control method comprises: obtaining a film state characteristic value of a target wafer; the film state characteristic value characterizes a state of the target wafer after a precursor film layer thereof is self-deposited and continuously evolves over time; the target wafer is a wafer in a waiting transfer state after a front-end deposition is completed; based on the film state characteristic value, a film state change trend of the target wafer when entering multiple candidate chambers at a candidate transfer time is predicted; based on the film state change trend of the target wafer and an available state of each candidate chamber, a transfer priority of the target wafer is determined; a target chamber and a transfer time are determined in the multiple candidate chambers according to the transfer priority; and an actuator of the FCVD device is controlled to transfer the target wafer to the target chamber at the transfer time.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment process control technology, and in particular to a multi-chamber wafer transfer control method, system and electronic equipment based on FCVD equipment. Background Technology

[0002] In Flowable Chemical Vapor Deposition (FCVD), after the wafer completes the initial deposition, it needs to be transferred to a subsequent chamber via a multi-chamber setup for further processing to transform the precursor film into the target dielectric film. However, in actual multi-chamber production, the conditions and timing experienced by different wafers from the completion of the initial deposition to entering the subsequent chamber vary, resulting in different film states when different wafers arrive at the subsequent chamber. This leads to dispersion in key parameters such as film thickness, uniformity, and refractive index among different wafers within a batch. Summary of the Invention

[0003] In view of this, this application provides a multi-chamber wafer transfer control method, system and electronic device based on FCVD equipment to overcome the shortcomings of the prior art.

[0004] According to a first aspect of this application, a multi-chamber wafer transfer control method based on an FCVD device is provided, comprising: obtaining a film state characterization value of a target wafer; the film state characterization value characterizing the state of the precursor film layer of the target wafer as it evolves over time after deposition; the target wafer being a wafer awaiting transfer after completing the pre-deposition stage; predicting the film state change trend of the target wafer when it enters multiple candidate chambers at candidate transfer times based on the film state characterization value; determining a transfer priority for the target wafer based on the film state change trend of the target wafer and the availability state of each candidate chamber; determining the target chamber and transfer time from the multiple candidate chambers according to the transfer priority; and controlling the actuator of the FCVD device to transfer the target wafer to the target chamber at the transfer time.

[0005] The second aspect of this application provides a multi-chamber wafer transfer control system based on an FCVD device, used to implement the aforementioned multi-chamber wafer transfer control method based on an FCVD device. The system includes: a film state acquisition module for obtaining film state characterization values ​​of a target wafer; the film state characterization values ​​characterize the state of the precursor film layer of the target wafer as it evolves over time after deposition; the target wafer is a wafer awaiting transfer after completing the initial deposition stage; a trend prediction module for predicting the film state change trend of the target wafer when it enters multiple candidate chambers at candidate transfer times, based on the film state characterization values; a priority evaluation module for determining a transfer priority for the target wafer based on the film state change trend of the target wafer and the availability status of each candidate chamber; a scheduling planning module for determining the target chamber and transfer time from multiple candidate chambers according to the transfer priority; and a transfer control module for controlling the actuator of the FCVD device to transfer the target wafer to the target chamber at the transfer time.

[0006] A third aspect of this application provides an electronic device including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement any of the above-described multi-chamber wafer transfer control methods based on an FCVD device.

[0007] The beneficial effects of this application are at least as follows:

[0008] By adopting the technical solution of this application, the system first obtains the film characterization value of the target wafer and quantifies the state of the precursor film layer as it evolves over time after deposition, enabling the system to perceive the current evolution stage of the wafer film layer. Based on this, the system predicts the film change trend of the target wafer when it enters multiple candidate chambers at each candidate transfer time based on the film characterization value, thereby predicting the film evolution trend under different transfer times and different combinations of candidate chambers before the transfer decision is executed. Then, the above-mentioned film change trend is combined with the availability state of each candidate chamber to determine the transfer priority for the target wafer, so that the transfer decision takes into account both the film adaptability and the availability of the chamber. Finally, the target chamber and transfer time are determined according to the transfer priority, and the execution mechanism is controlled to complete the transfer.

[0009] Compared with the existing multi-chamber transfer control methods, which have difficulty in effectively managing the differences in film state when different wafers arrive at subsequent chambers, this application enables the target wafer to complete the transfer at a candidate chamber and transfer time that matches its current film state by predicting and actively scheduling the film state evolution process. This effectively manages the differences in film state when different wafers enter subsequent chambers within a batch, reducing the batch-to-batch dispersion of key parameters such as film thickness, uniformity, and refractive index.

[0010] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this application, nor is it intended to limit the scope of this application. Other features of this application will become readily apparent from the following description. Attached Figure Description

[0011] The above and other objects, features and advantages of this application will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0012] Figure 1 This is a schematic flowchart of a multi-chamber wafer transfer control method based on an FCVD device provided in an embodiment of this application;

[0013] Figure 2 A schematic diagram of a multi-chamber wafer transfer control system based on an FCVD device is provided in an embodiment of the present invention;

[0014] Figure 3 This is a schematic diagram of the physical structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0015] The embodiments of this application will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of this application. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of this application for ease of explanation. However, it will be apparent that one or more embodiments may be implemented without these specific details. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of this application.

[0016] Figure 1 The flowchart illustrates a multi-chamber wafer transfer control method based on an FCVD device provided in the embodiments of this application.

[0017] like Figure 1 As shown, the multi-chamber wafer transfer control method based on FCVD equipment includes steps S101 to S104.

[0018] Step S101: Obtain the film characterization value of the target wafer; the film characterization value characterizes the state of the precursor film layer of the target wafer as it evolves over time after deposition is completed; the target wafer is a wafer that is in a waiting-for-transfer state after the completion of the front-end deposition.

[0019] Step S102: Based on the film characterization values, predict the film change trend of the target wafer when it enters multiple candidate chambers at the candidate transfer time.

[0020] Step S103: Based on the film state change trend of the target wafer and the available state of each candidate chamber, determine the transfer priority for the target wafer;

[0021] Step S104: Determine the target chamber and transfer time from multiple candidate chambers based on the transfer priority;

[0022] Step S105: Control the actuator of the FCVD device to transfer the target wafer to the target chamber at the transfer moment.

[0023] In step S101, the target wafer refers to the wafer that has completed the front-end deposition process in the FCVD multi-chamber equipment and is currently waiting to be transferred to the subsequent process chamber. It can be understood as a wafer on which a precursor film has been formed on its surface in the front-end deposition chamber, but has not yet been transferred to the subsequent process chamber by the actuator. It is used as the object of the transfer control decision in this method.

[0024] For example, the target wafer may include, but is not limited to: a wafer that has completed the deposition of a flowable silicon oxide precursor film, a wafer that has completed the deposition of a silicon nitride precursor film, or a wafer that has completed the deposition of other target dielectric film precursor films.

[0025] In order to dynamically determine the transfer timing and target chamber of the target wafer, it is necessary to obtain the film characterization value of the target wafer. The film characterization value refers to the characterization quantity that can quantitatively describe the evolution state of the precursor film layer of the target wafer at the current moment. It can be understood as the result of quantitatively representing the state of the precursor film layer that continues to change over time after deposition.

[0026] Here, the precursor film is not static after deposition but evolves continuously over time, including processes such as liquid film evaporation, leveling, condensation, and changes in surface activity. Even if two wafers use the exact same deposition formulation, differences in the waiting time after deposition can lead to significant differences in the film state when entering subsequent chambers, thus affecting the subsequent processing effects and the final film quality. For example, wafer A is transferred to the UV exposure chamber approximately 15 seconds after deposition, while wafer B, whose corresponding UV exposure chamber is processing the previous wafer, has a waiting time extended to approximately 60 seconds. Although the deposition formulations of the two wafers are identical, wafer B has experienced more significant evaporation loss and condensation during the waiting period. If processed with the same UV exposure parameters, the final film thickness and refractive index of the two wafers will show significant differences. Therefore, the film state characterization value represents the comprehensive state of the aforementioned continuous evolution process at the current moment, enabling the control system to distinguish the actual film state differences between different wafers, rather than relying solely on the waiting time.

[0027] In one feasible implementation, the film characterization value of the target wafer at the current moment can be obtained by querying a pre-established correspondence table between process parameters and film characterization values ​​based on the front-end deposition process parameters of the target wafer and the waiting time after deposition. The correspondence table can be pre-calibrated based on a large amount of historical process data. The table records the film characterization values ​​corresponding to different combinations of deposition process parameters and different waiting times. The control system can obtain the corresponding film characterization value by searching or interpolating based on the current deposition process parameters of the target wafer and the actual waiting time.

[0028] In another feasible implementation, the film characterization value can be directly estimated by acquiring sensor data from the current location of the target wafer. Specifically, the sensor data may include temperature sensor readings on the surface of the target wafer or its buffer location, chamber pressure recovery characteristics after exiting the cavity, and optical detection signal response values. This sensor data can indirectly reflect the current evolution state of the precursor film, such as the degree of volatilization, surface activity, and condensation process. By inputting this data into a pre-trained data processing model, the film characterization value at the current moment can be obtained.

[0029] In step S102, the candidate transfer time refers to several possible transfer execution time points preset by the control system for the target wafer. It can be understood as multiple discrete time points within a certain period of time after the current time, which the control system considers to be feasible for transfer.

[0030] Similarly, candidate chambers refer to multiple subsequent process chambers to which the target wafer may be transferred after the front-end deposition is completed. They can be understood as a set of chambers that have the potential to process the target wafer under the current equipment state, and are used as alternatives in the spatial dimension of subsequent transfer decisions.

[0031] For example, the candidate chamber may include, but is not limited to: ultraviolet exposure chamber, plasma treatment chamber, heat treatment chamber, and densification treatment chamber.

[0032] After obtaining the film state characterization values, the control system needs to further evaluate the suitability of the target wafer when entering different candidate chambers at different candidate transfer times. This requires predicting the film state change trend. The film state change trend refers to the evolution state of the precursor film layer of the target wafer when entering each candidate chamber at each candidate transfer time and its matching relationship with the corresponding chamber's process requirements. It can be understood as a prediction of the film state adaptation of the target wafer under different transfer times and different target chamber combinations.

[0033] In one feasible implementation, the precursor film of the target wafer can be predicted at each candidate transfer time based on the current film state characterization value of the target wafer and the time interval between the current time and each candidate transfer time. Then, the predicted film state at each candidate transfer time is compared with the process requirements of each candidate chamber to obtain the film state change trend of the target wafer when it enters each candidate chamber at each candidate transfer time.

[0034] In step S103, the available status refers to the actual usage of each candidate chamber at the current moment and in the subsequent period.

[0035] After obtaining the film state change trend of the target wafer and the availability status of each candidate chamber, the transfer priority of the target wafer can be determined by combining the two aspects of information. The transfer priority refers to the result of ranking each transfer scheme according to its priority based on a comprehensive consideration of the film state adaptation of the target wafer and the actual availability of each candidate chamber. It can be understood as the execution order determined by the control system among multiple candidate chambers and multiple candidate transfer time combinations.

[0036] In one feasible implementation, the available time range corresponding to the available state of each candidate chamber can be compared with the candidate transfer time to screen out the effective candidate transfer time that each candidate chamber can actually accept the target wafer. Then, the schemes are scored and ranked in combination with the film state change trend of the target wafer at the corresponding time to obtain the transfer priority.

[0037] In another feasible implementation, the membrane change trend and the available state can be quantified into corresponding evaluation scores, and the comprehensive evaluation value of each candidate chamber at each candidate transfer time can be obtained by weighted summation. The transfer priority is then determined according to the comprehensive evaluation value from high to low.

[0038] Optionally, the availability status may include information such as whether the candidate chamber is currently occupied, the expected time to complete the current processing task, and whether it is in a maintenance cycle. The control system can obtain the above information in real time to ensure the timeliness of the transfer priority.

[0039] In step S104, the target chamber refers to the process chamber that is finally selected from multiple candidate chambers based on the transfer priority, and is used to receive and process the target wafer. It can be understood as the actual transfer destination determined by the control system for the target wafer after comprehensively considering the film-state compatibility and the availability of the chamber.

[0040] Similarly, the transfer moment refers to the actual point in time at which the control system ultimately determines the execution of the transfer action for the target wafer.

[0041] In one feasible implementation, the candidate chamber and candidate transfer time corresponding to the scheme with the highest transfer priority can be directly determined as the target chamber and transfer time, respectively, and the transfer command can be sent to the execution mechanism to send the target wafer into the target chamber at the corresponding transfer time.

[0042] In another feasible implementation, when the candidate chamber or candidate transfer time corresponding to the highest transfer priority scheme no longer meets the availability conditions due to changes in equipment status, the target chamber and transfer time can be re-determined from the suboptimal schemes according to the transfer priority, so as to ensure the effectiveness of the transfer decision.

[0043] In step S105, the actuator refers to the physical device in the FCVD equipment responsible for actually performing the wafer transfer action. It can be understood as a mechanical actuator that moves the target wafer from its current position to the target chamber according to the transfer command issued by the control system, thus implementing the transfer decision determined in the aforementioned steps into an actual physical transfer action. For example, the actuator may include, but is not limited to, a robotic arm, a conveyor track, a lifting device, and an end effector.

[0044] In one feasible implementation, the control system can issue a transfer command to the actuator when the transfer time arrives. The actuator responds to the command, removes the target wafer from the current buffer position or process chamber according to the preset motion path, and sends it into the target chamber to complete the transfer action.

[0045] By adopting the technical solution of this application, firstly, by obtaining the film state characterization values ​​of the target wafer, the state of the precursor film layer as it evolves over time after deposition is quantitatively expressed. This enables the control system to perceive the current evolution stage of the wafer film layer, thus providing quantifiable film state input for subsequent transfer decisions. Based on this, the film state characterization values ​​are used to predict the film state change trends of the target wafer when it enters multiple candidate chambers at various candidate transfer times. This achieves the prediction of the film state evolution trend under different transfer times and different combinations of candidate chambers before the transfer action is executed, avoiding errors due to improper transfer timing or target... In cases where improper selection of the chamber leads to deviations in the film state from process requirements, the trend of film state changes is combined with the availability of each candidate chamber to determine the transfer priority for the target wafer. This ensures that the transfer decision takes into account both film state compatibility and actual chamber availability, making reasonable use of equipment resources while ensuring process quality. Finally, the target chamber and transfer time are determined based on the transfer priority, and the actuator is controlled to transfer the target wafer to the target chamber at the transfer time. This translates the aforementioned decision results into actual physical transfer actions, effectively improving the rationality of wafer transfer scheduling and process consistency in the FCVD process.

[0046] Based on the above embodiments, as an optional embodiment, in order to quantify the evolution state of the precursor film layer from multiple dimensions and enable the film characterization value to distinguish the differences between different wafers in terms of effective quality level, subsequent processing response capability and volatilization polycondensation process, the above step S101 may further include the following steps.

[0047] Step S201: Obtain the front-end deposition process parameters and waiting time for the target wafer;

[0048] Step S202: Determine the film composition based on the front-end deposition process parameters and waiting time of the target wafer;

[0049] Step S203: Obtain membrane characterization values ​​based on membrane state components;

[0050] In step S201, the front-end deposition process parameters refer to the process data recorded during the deposition of the precursor film on the target wafer in the front-end deposition chamber. This can be understood as the amount of process records reflecting the initial conditions during film formation.

[0051] For example, the front-end deposition process parameters may include, but are not limited to: deposition chamber pressure, precursor gas flow rate and ratio, carrier gas flow rate, deposition temperature, deposition duration and target film thickness.

[0052] Waiting time refers to the length of time that the target wafer has experienced from the end of the previous deposition process to the current moment. It is used to reflect the cumulative time that the precursor film layer continues to evolve naturally without subsequent process intervention.

[0053] In one feasible implementation, the waiting time can be calculated in real time by the control system based on the difference between the deposition end timestamp and the current time, and continuously updated as the control cycle progresses. For example, if the deposition end timestamp of a target wafer is recorded as T0, and the control system reads the current time T in the current control cycle, then the waiting time for that wafer is T. T0; As each control cycle progresses, this difference continues to increase, and the control system updates the wafer's waiting time input in real time accordingly.

[0054] In step S202, the membrane state component refers to the sub-state quantity that decomposes and expresses the current state of the precursor membrane from different evolutionary dimensions. It can be understood as the result of quantifying the comprehensive evolutionary state of the precursor membrane in multiple relatively independent physical evolutionary process dimensions, which is used to reflect the specific evolutionary state of the precursor membrane at the current moment from different perspectives.

[0055] In one feasible implementation, the initial values ​​of each film component can be constructed based on the front-end deposition process parameters. Then, with the waiting time and the temperature conditions of the current buffer position of the target wafer as inputs, the values ​​of each film component are dynamically updated according to the physical laws of the evolution of each film component over time, so as to obtain the values ​​of each film component at the current moment. The above update calculation is repeated in each control cycle to ensure that each film component always reflects the current actual evolution state of the target wafer.

[0056] In step S203, multiple membrane components can be combined in vector form, and the set of membrane components can be directly used as the membrane characterization value. In subsequent steps, the control system uses the entire vector as input to predict the membrane change trend.

[0057] In another feasible implementation, each membrane component can be assigned a corresponding weight, and multiple membrane components can be integrated into a single membrane characterization value by weighted summation. The weight can be pre-calibrated according to the degree of influence of each membrane component on the final membrane quality under different product types or process objectives. When the influence of a certain membrane component on the final membrane quality is more significant, its corresponding weight can be increased accordingly.

[0058] For example, for flowable silicon oxide precursor films that are more sensitive to waiting time, the decay of the active state component often has a more significant impact on the final refractive index, and the active state component can be given a higher weight accordingly; while for silicon nitride precursor films with a slower evaporation rate, the weight of the mass state component can be reduced accordingly.

[0059] Optionally, the membrane component includes at least two of the following: mass state component, active state component, and evolutionary state component.

[0060] The aforementioned quality state components characterize the current effective quality level of the precursor film layer on the target wafer. The quality state components can be initially determined based on the precursor gas flow rate, deposition time, and target film thickness in the front-end deposition process parameters. These values ​​are then corrected according to the waiting time and the temperature conditions at the current location of the target wafer: the higher the current temperature, the faster the film evaporation rate, and the greater the quality loss per unit waiting time; the longer the waiting time, the greater the cumulative evaporation loss. After considering these temperature and time corrections, the quality state components at the current moment are obtained.

[0061] For example, two target wafers in the same batch have identical front-end deposition process parameters, but the local temperature of the buffer position where wafer C is located is 25°C, while the local temperature of the buffer position where wafer D is located is 38°C. With a waiting time of 30 seconds for both, wafer D has a significantly higher evaporation loss rate per unit time due to its higher temperature, resulting in a difference in the current quality state component values ​​between the two wafers. If the control system only makes a judgment based on the waiting time, it cannot distinguish the above differences.

[0062] The aforementioned active state components characterize the responsiveness of the precursor film layer of the target wafer to subsequent processing. The active state components can be determined based on the initial active baseline value determined by the front-end deposition process parameters, and then corrected according to the waiting time and the current degree of polymerization: the deeper the polymerization, the lower the film's responsiveness and the greater the activity decay; the longer the waiting time, the lower the active state components; after combining the above corrections based on the degree of polymerization and the waiting time, the active state components at the current moment are obtained.

[0063] For example, if the polymerization process of a target wafer progresses rapidly during the waiting period, the responsiveness of its precursor film to ultraviolet light has decreased significantly compared to the initial value. If it is still processed according to the default ultraviolet exposure parameters, the actual curing conversion will be lower than expected. The introduction of the active state component enables the control system to sense the above-mentioned activity decay before the transfer.

[0064] The aforementioned evolutionary state components characterize the degree of volatilization and the polymerization process of the precursor film on the target wafer. These evolutionary state components can include a volatilization flow sub-component and a polymerization process sub-component. The volatilization flow sub-component can be determined based on the initial volatilization flow baseline value determined by the front-end deposition process parameters, updated according to a natural decay trend over the waiting time, and corrected using the temperature of the target wafer's current location as the correction input: the higher the temperature, the greater the volatilization flow; the deeper the polymerization, the more suppressed the volatilization flow capability. The polymerization process sub-component can be calculated based on the cumulative value of the volatilization flow sub-component and surface activity-related parameters in the front-end deposition process parameters: the more active the volatilization flow, the faster the polymerization process progresses; the cumulative value of the polymerization process sub-component continuously increases with the increase of the waiting time.

[0065] For example, in the early stage of waiting for a target wafer, the volatile flow component is relatively high and the film fluidity is strong. During this stage, the polycondensation process component continues to accumulate with the active volatile flow. As the waiting time increases, the volatile flow component gradually decreases, the film fluidity decreases, and the growth rate of the polycondensation process component also slows down. The two components together describe the evolution process of the precursor film from the initial flow state to the gradual solidification state.

[0066] By adopting the technical solution of this application, the evolution state of the precursor film layer of the target wafer is quantitatively perceived, and the trend of film change under different transfer times and different candidate chamber combinations is predicted before the transfer decision is executed. At the same time, the transfer priority is determined by combining the actual availability of each candidate chamber. Thus, under the premise of ensuring that the film state is compatible with the process requirements of the target chamber, the equipment resources are rationally utilized, which effectively improves the rationality of wafer transfer scheduling and process consistency in FCVD process.

[0067] Based on the above embodiments, as an optional embodiment, in order to progressively decompose and evaluate the film-state adaptation of the target wafer when it enters each candidate chamber at each candidate transfer time, and quantify the comparison results into a matching degree that can be used for subsequent transfer priority ranking, the above step S102 may further include the following steps.

[0068] Step S301: Based on the film state characterization value and time interval, predict the predicted film state of the precursor film layer of the target wafer at each candidate transfer time; the time interval is the time interval between the current time and each candidate transfer time.

[0069] Step S302: Obtain the process requirements for each candidate chamber; the process requirements characterize the precursor film conditions required by the corresponding candidate chamber to effectively process the wafer.

[0070] Step S303: Based on the predicted film state at each candidate transfer time and the process requirements of each candidate chamber, determine the matching degree between the target wafer and each candidate chamber;

[0071] Step S304: Based on the matching degree between the target wafer and each candidate chamber, obtain the film state change trend when the target wafer enters multiple candidate chambers at the candidate transfer time.

[0072] In step S301, the predicted film state refers to the estimate of the evolution state of the precursor film when the candidate transfer time arrives, based on the current film state characterization value of the target wafer and the time interval between the current time and the corresponding candidate transfer time.

[0073] In one feasible implementation, the current film state characterization value of the target wafer can be used as the initial state. The front-end deposition process parameters and the temperature conditions at the current location of the target wafer are used as inputs. According to the physical change trend of the precursor film layer over time, the film state change process between the current time and each candidate transfer time is gradually calculated to obtain the predicted film state at each candidate transfer time. The longer the time interval, the greater the cumulative change of the precursor film layer in terms of effective quality, surface activity and condensation process, and the more obvious the deviation between the predicted film state at the corresponding candidate transfer time and the current film state.

[0074] For example, the control system sets three candidate transition times for a target wafer: the 10th second, the 25th second, and the 45th second. Based on the current film state characterization value, the predicted film state at each of the three times is calculated. It is found that at the 10th second, the active state component of the wafer is still at a high level and the cumulative polycondensation process sub-component is small. However, at the 45th second, the active state component has decreased significantly and the cumulative polycondensation process sub-component has increased significantly. The predicted film state corresponding to the three candidate transition times shows a pattern of continuously deviating from the initial state as the time interval increases.

[0075] In step S302, the process requirements refer to the conditions specified by each candidate chamber for the precursor film layer of the wafer entering it for processing in terms of film state. It can be understood as the range of evolution states that the precursor film layer needs to meet when the corresponding candidate chamber can effectively process the precursor film layer.

[0076] For example, for a UV exposure chamber, the process requirements may include, but are not limited to: the responsive activity of the precursor film to UV light is within the effective conversion range, and the polycondensation process does not exceed the degree suitable for UV curing treatment; for a plasma treatment chamber, the process requirements may include, but are not limited to: the convertible activity of the precursor film meets the minimum requirements for plasma modification, and the evolution state of the film does not exceed the range that plasma treatment can cover.

[0077] In one feasible implementation, while acquiring the process requirements of each candidate chamber, the current real-time status of each candidate chamber can be read, and the pre-calibrated process requirements can be corrected based on the real-time status of the chamber. When a candidate chamber currently experiences output drift or state fluctuation, the permissible range of the process requirements for that chamber can be narrowed accordingly to reflect the actual permissible degree of the chamber for entering the membrane state under the current state.

[0078] In step S303, the matching degree refers to the degree of conformity between the predicted film state of the target wafer at a certain candidate transfer moment and the process requirements of the corresponding candidate chamber. When the target wafer is sent into the corresponding candidate chamber at that candidate transfer moment, the degree of conformity between the evolution state of the precursor film at that time and the film state conditions required for effective processing in that chamber is used to quantitatively characterize the suitability of allocating the target wafer to a specific candidate chamber at a specific candidate transfer moment.

[0079] In one feasible implementation, the predicted film state at each candidate transfer time can be compared with the process requirements of the corresponding candidate chamber. Based on the degree of conformity between the predicted film state and the process requirements, the matching degree between the target wafer and the corresponding candidate chamber at that candidate transfer time can be obtained. The closer the predicted film state is to the conditions specified by the process requirements, the higher the matching degree; the greater the deviation, the lower the matching degree.

[0080] For example, the predicted film state of the target wafer at the 10th second can be compared with the process requirements of the UV exposure chamber and the plasma processing chamber, respectively: at the 10th second, the active state component of the wafer is still within the effective conversion range of the UV exposure chamber, corresponding to a high degree of matching with the UV exposure chamber; while at the 45th second, the active state component of the wafer has fallen below the lower limit of the process requirements of the UV exposure chamber, corresponding to a significant decrease in the degree of matching with the UV exposure chamber, but at this time its evolution state component is still within the process requirements of the plasma processing chamber, corresponding to an acceptable degree of matching with the plasma processing chamber.

[0081] In step S304, the matching degree of each candidate chamber at each candidate transfer time can be summarized according to the combination of candidate chamber and candidate transfer time. The change trend of each matching degree with the candidate transfer time is used as the film state change trend when the target wafer enters multiple candidate chambers at the candidate transfer time, which is used in step S103 to determine the transfer priority.

[0082] Optionally, the process requirements for each candidate chamber can be specified separately for different product types. When the target wafer corresponds to different precursor film types, the control system can retrieve the corresponding process requirements based on the product type of the target wafer to reflect the different requirements of different precursor systems for film conditions when entering each candidate chamber.

[0083] It should be noted that for the same target wafer, the process requirements of different candidate chambers are independent of each other. The control system obtains the corresponding process requirements for each candidate chamber and compares them independently with the predicted film state at each candidate transfer time to obtain the matching degree of each candidate chamber at each candidate transfer time. The above matching degrees together constitute the film state change trend of the target wafer for multiple candidate chambers.

[0084] By adopting the technical solution of this application, firstly, based on the current film state characterization value of the target wafer and the time interval between the current time and each candidate transfer time, the predicted film state of the precursor film at each candidate transfer time is calculated, enabling the control system to obtain the film state prediction of the target wafer at each future time before the transfer action is executed. On this basis, by obtaining the process processing requirements of each candidate chamber, the film state conditions required for effective processing of the chamber are included in the evaluation scope. Then, the predicted film state is compared with the process processing requirements of each candidate chamber to determine the matching degree between the target wafer and each candidate chamber at different candidate transfer times. Finally, the trend of film state change is formed by the change of each matching degree with the candidate transfer time, providing a quantifiable evaluation basis for the subsequent determination of transfer priority, effectively improving the accuracy and process adaptability of transfer time selection and candidate chamber allocation.

[0085] Based on the above embodiments, as an optional embodiment, in order to refine the difference between the predicted membrane state and the process requirements of the candidate chamber to the level of each membrane state component and quantify them separately, and to introduce the upper limit of the candidate chamber's ability to compensate for the deviation of each membrane state component as an evaluation dimension, so that the matching degree can simultaneously reflect the degree of deviation of the predicted membrane state and the degree of compensation of the deviation, the above step S303 may further include the following steps.

[0086] Step S401: Compare each membrane component of the predicted membrane state at each candidate transfer time with the corresponding component threshold specified by the process requirements of the corresponding candidate chamber to determine the component deviation value of each membrane component; the membrane component is each sub-state quantity that constitutes the predicted membrane state; the component deviation value represents the deviation of the corresponding membrane component from the component threshold.

[0087] Step S402: Based on the deviation values ​​of each component, determine the degree of deviation between the predicted membrane state at each candidate transfer time and the process requirements of the corresponding candidate chamber;

[0088] Step S403: Compare the deviation values ​​of each component with the parameter compensation capability of the corresponding candidate chamber's process parameters to determine the recoverability of each membrane component; the parameter compensation capability characterizes the upper limit of the component deviation value that the corresponding candidate chamber can compensate for by adjusting the process parameters.

[0089] Step S404: Based on the recoverability of each component, determine the compensation recoverability of the target wafer in the corresponding candidate chamber;

[0090] Step S405: Based on the degree of deviation and the recoverability of compensation, the matching degree between the target wafer and the corresponding candidate chamber is obtained.

[0091] In step S401, the component threshold refers to the quantization boundary value specified by the process requirements in each film component dimension.

[0092] In one feasible implementation, the component thresholds corresponding to each membrane component can be pre-calibrated for each candidate chamber and stored in the control system as parameters. When step S401 is executed, the values ​​of each membrane component predicted at each candidate transition time are compared with the component thresholds of the corresponding candidate chamber one by one, and the difference between each membrane component value and the corresponding component threshold is used as the component deviation value. When a membrane component value is within the range specified by the corresponding component threshold, the corresponding component deviation value is zero or a smaller value. When a membrane component value exceeds the range specified by the corresponding component threshold, the corresponding component deviation value increases with the increase of the deviation.

[0093] Optionally, the difference between the value of each membrane component and the corresponding component threshold can be normalized to obtain the normalized component deviation value, so as to eliminate the influence of the dimensional differences between different membrane components on the subsequent deviation calculation.

[0094] For example, the calculation process of the separation deviation value can be expressed as follows:

[0095]

[0096] In the formula, This represents the component deviation value corresponding to the kth film state component when the target wafer i enters the candidate chamber j at candidate transfer time t. This represents the value of the k-th film state component in the predicted film states of target wafer i at candidate transfer time t; The threshold value for candidate chamber j relative to the k-th membrane component is denoted by t; t is the candidate transition time.

[0097] In step S402, the degree of deviation refers to the comprehensive deviation level between the predicted film state and the corresponding candidate chamber process requirements, which is obtained by integrating the component deviation values ​​of each film state component. The degree of deviation can reflect the gap between the predicted film state of the target wafer at the corresponding candidate transfer time and the corresponding candidate chamber process requirements.

[0098] In one feasible implementation, the deviation values ​​of each membrane component can be assigned corresponding weights, and the degree of deviation can be obtained by weighted summation. The weights can be pre-calibrated based on the degree of influence of each membrane component on the final treatment effect of the corresponding candidate chamber. When the deviation of a certain membrane component has a more significant impact on the final treatment effect, its corresponding weight can be increased accordingly.

[0099] In another feasible implementation, the maximum value among the deviation values ​​of each membrane component can be taken as the degree of deviation to reflect the limiting effect of the most prominent single deviation in the predicted membrane on the overall processing effect; when the deviation value of any membrane component is large, even if the deviations of the other components are small, the degree of deviation is still taken as a high value.

[0100] In step S403, component recoverability refers to the degree to which the deviation of each membrane component can be recovered in the corresponding candidate chamber after adjusting the process parameters, based on the comparison results of the component deviation value of each membrane component and the compensation capability of the corresponding candidate chamber parameters. It is used to reflect the recoverability of the deviation of each membrane component from the component level.

[0101] In one feasible implementation, the deviation value of each membrane component can be compared one by one with the parameter compensation capability of the corresponding candidate chamber for that membrane component: when the deviation value of a certain membrane component does not exceed the corresponding parameter compensation capability, the recoverability of that membrane component is set to a higher value, indicating that the deviation of that component can be covered by adjusting the process parameters of the corresponding candidate chamber; when the deviation value of a certain membrane component exceeds the corresponding parameter compensation capability, the recoverability of that membrane component is set to a lower value, indicating that the deviation of that component exceeds the range that can be covered by adjusting the parameters of the corresponding candidate chamber.

[0102] In another feasible implementation, the ratio of the deviation value of each membrane component to the corresponding candidate chamber parameter compensation capability can be used as a quantitative expression of component recoverability. The smaller the ratio, the farther the deviation of the component is from the upper limit of the parameter compensation capability, and the higher the component recoverability. For example, the closer the ratio is to or exceeds 1, the closer the deviation of the component is to or exceeds the upper limit of the parameter compensation capability, and the lower the component recoverability.

[0103] In step S404, the compensation recoverability refers to the comprehensive degree of recovery of the overall film state of the target wafer in the corresponding candidate chamber by adjusting the process parameters, which is obtained by integrating the recoverability of each film state component. It can characterize the overall level at which the overall deviation of the predicted film state of the target wafer can be effectively compensated within the parameter adjustment capability range of the corresponding candidate chamber.

[0104] In one feasible implementation, the recoverability of each film component can be assigned a corresponding weight, and the compensation recoverability of the target wafer in the corresponding candidate chamber can be obtained by weighted summation. When the component deviation of each film component does not exceed the compensation capability of the corresponding parameter, the compensation recoverability takes a higher value. When one or more film components have a component deviation that exceeds the compensation capability of the corresponding parameter, the compensation recoverability decreases as the excess increases.

[0105] For example, the calculation of compensable recoverability can be expressed as:

[0106]

[0107] In the formula, This represents the component recoverability of the kth film state component when the target wafer i enters the candidate chamber j at candidate transfer time t. The parameter compensation capability of candidate chamber j for the k-th membrane component is expressed as the upper limit of the deviation value of the membrane component that the corresponding candidate chamber can compensate for by adjusting the process parameters.

[0108] When the deviation of a certain membrane component does not exceed the upper limit of the parameter compensation capability of the corresponding candidate chamber, the recoverability of that membrane component is a positive value greater than zero. The smaller the ratio of the deviation to the parameter compensation capability, the closer the recoverability is to the maximum value, indicating that the deviation of the membrane component is within the coverage range of the parameter adjustment capability of the corresponding candidate chamber and can be effectively compensated by adjusting the process parameters. When the deviation of a certain membrane component exceeds the upper limit of the parameter compensation capability of the corresponding candidate chamber, the recoverability of that membrane component is zero, indicating that the deviation of the membrane component has exceeded the range that the parameter adjustment of the corresponding candidate chamber can cover and cannot be effectively recovered by adjusting the process parameters.

[0109] Based on this, the recoverability of each film component is assigned a corresponding weight and then summed by weight to obtain the compensation recoverability of the target wafer in the corresponding candidate chamber. When the component deviation of each film component does not exceed the upper limit of the corresponding parameter compensation capability, the compensation recoverability takes a higher value. When one or more film components have a component deviation that exceeds the upper limit of the corresponding parameter compensation capability, the recoverability of the corresponding component drops to zero, and the compensation recoverability decreases as the excess increases.

[0110] In step S405, the matching degree between the target wafer and the corresponding candidate chamber can be determined comprehensively based on the degree of deviation and the recoverability of compensation.

[0111] In one feasible implementation, the degree of deviation and the recoverability of compensation can be quantified separately and then combined for calculation to obtain the matching degree. The lower the degree of deviation, the closer the predicted film state is to the process requirements, and the higher the matching degree. When the degree of deviation is similar, the higher the recoverability of compensation, the greater the possibility that the target wafer can be restored to the qualified level in the corresponding candidate chamber through parameter adjustment, and the higher the matching degree. The combination of high degree of deviation and low recoverability of compensation corresponds to the lowest matching degree.

[0112] In another feasible implementation, corresponding thresholds can be set for the degree of deviation and the degree of compensation recoverability, and the matching degree can be divided into multiple levels according to the relative relationship between the two and their respective thresholds. When the degree of deviation is lower than the deviation threshold, the matching degree takes a higher level. When the degree of deviation exceeds the deviation threshold but the degree of compensation recoverability is higher than the recoverable threshold, the matching degree takes an intermediate level. When the degree of deviation exceeds the deviation threshold and the degree of compensation recoverability is lower than the recoverable threshold, the matching degree takes the lowest level.

[0113] For example, two target wafers, E and F, exist in the same equipment. Both have similar deviations from the UV exposure chamber, exceeding the deviation threshold. However, the deviation of the active state component of wafer E is still within the parameter compensation capability range of the UV exposure chamber, and the compensation recoverability is higher than the recoverable threshold, corresponding to an intermediate matching degree. The deviation of the polycondensation process sub-component of wafer F exceeds the upper limit of the compensation capability of the UV exposure chamber, and the compensation recoverability is lower than the recoverable threshold, corresponding to the lowest matching degree. Based on this, the control system distinguishes the degree of compatibility between the two wafers and the UV exposure chamber. Wafer E is given priority in having its compensation parameters adjusted before being sent into the UV exposure chamber, while wafer F is guided to alternative paths such as the plasma processing chamber in the subsequent transfer priority ranking.

[0114] Optionally, different types of candidate chambers can exhibit different parameter compensation capabilities for deviations of the same film component. When a target wafer has a deviation of a certain film component, the parameter compensation capability of a certain type of candidate chamber for that component deviation may be higher than that of another type of candidate chamber. The control system can independently calibrate the parameter compensation capability corresponding to each film component for different types of candidate chambers to accurately reflect the actual compensation range of each chamber. As a result, the compensation recoverability obtained by the same target wafer in different types of candidate chambers may differ, which in turn makes the matching degree corresponding to each candidate chamber different.

[0115] For example, the matching degree between the target wafer and the corresponding candidate chamber can be expressed as:

[0116]

[0117] In the formula, This represents the degree of matching between the target wafer i and the candidate chamber j at candidate transfer time t; This represents the weight of the recoverability of the k-th membrane component in the calculation of the compensation recoverability. This represents the weight of the component deviation value of the k-th membrane component in the deviation degree calculation; The weighted sum of the recoverability of each film state component corresponds to the compensation recoverability of the target wafer i in the candidate chamber j. The weighted sum of the deviations of each membrane component corresponds to the predicted degree of deviation between the membrane state and the process requirements. The higher the recoverability of the compensation, the greater the matching degree; the greater the degree of deviation, the smaller the matching degree.

[0118] By adopting the technical solution of this application, each component of the predicted film state at each candidate transfer time is compared with the component threshold of the corresponding candidate chamber to obtain the component deviation value of each film state component, so that the difference between the predicted film state and the process requirements can be quantified at the component level. On this basis, the component deviation value is compared with the parameter compensation capability of the corresponding candidate chamber to determine the component recoverability of each film state component, and then the compensation recoverability of the target wafer in the corresponding candidate chamber is determined. The recoverability that the deviation degree cannot reflect alone is introduced into the calculation of the matching degree. Finally, the deviation degree and the compensation recoverability are combined to determine the matching degree, which effectively improves the accuracy of candidate chamber screening and transfer time evaluation and the rationality of the process.

[0119] Based on the above embodiments, as an optional embodiment, in order to first exclude the candidate transfer times corresponding to each candidate chamber during the unavailable period, and then evaluate the suitability of each transfer scheme based on the membrane change trend within the remaining effective candidate transfer time range, the above step S103 may further include the following steps.

[0120] Step S501: Based on the availability status of each candidate chamber, determine the available time window for each candidate chamber; the available time window represents the time period during which the corresponding candidate chamber is in an acceptable wafer state within a preset time range.

[0121] Step S502: Compare each candidate transfer time with the available time window of each candidate chamber to determine the effective candidate transfer time corresponding to each candidate chamber within the available time window;

[0122] Step S503: Based on the film state change trend of each candidate chamber at the corresponding effective candidate transfer time, determine the transfer evaluation value of each candidate chamber; the transfer evaluation value characterizes the suitability of transferring the target wafer to the corresponding candidate chamber at the corresponding effective candidate transfer time.

[0123] Step S504: Based on the transfer evaluation values ​​of each candidate chamber, the transfer priority of the target wafer is obtained.

[0124] In step S501, the available time window refers to the time interval within which the corresponding candidate chamber can accept the target wafer and start processing, determined based on the availability status of each candidate chamber; it can be selected as a continuous time period within the preset time range during which the corresponding candidate chamber is in an unoccupied, maintenance-free, and wafer-receiving state.

[0125] In one feasible implementation, the time period during which each candidate chamber is in an acceptable state within a preset time range can be determined based on the expected completion time of the current processing task of each candidate chamber, the expected time of the next task, and the maintenance cycle arrangement, and this time period can be used as the available time window for the corresponding candidate chamber.

[0126] Optionally, the determination of the available time window can also incorporate the transfer time required for the actuator to deliver the target wafer from its current position to the corresponding candidate chamber as a correction input; the starting boundary of the available time window can be adjusted forward accordingly to ensure that the target wafer can be successfully delivered to the candidate chamber when it is in an acceptable state after the actuator completes the transfer action, avoiding the situation where the candidate chamber has not yet entered an acceptable state when the target wafer arrives due to the lack of reserved transfer time.

[0127] In step S502, the effective candidate transfer time refers to the candidate transfer time that matches the available time window of the corresponding candidate chamber among all candidate transfer times. It can be selected as the candidate transfer time that the control system considers to be feasible for transfer within the time period when the candidate chamber is in an acceptable state.

[0128] For example, each candidate transfer time can be compared with the available time window of each candidate chamber one by one. Candidate transfer times that are within the available time window of the corresponding candidate chamber are retained as valid candidate transfer times, while candidate transfer times that are outside the available time window are excluded and do not participate in the calculation of subsequent transfer evaluation values.

[0129] In step S503, the transfer evaluation value refers to the quantitative result of the suitability of transferring the target wafer to the corresponding candidate chamber at that moment, which is determined based on the film state change trend of the target wafer at the corresponding effective candidate transfer time. It can be understood as the overall fit level of the transfer scheme reflected by the film state change trend of the target wafer at the corresponding effective candidate transfer time under the constraint of the available time window of the candidate chamber.

[0130] For example, the quantitative value of the film state change trend of each candidate chamber at the corresponding effective candidate transfer time can be directly extracted, and this value can be used as the transfer evaluation value of the corresponding candidate chamber. The higher the quantitative value of the film state change trend at the corresponding effective candidate transfer time, the higher the degree of adaptation between the film state and the process requirements when the target wafer is sent into the corresponding candidate chamber at that time, and the higher the transfer evaluation value.

[0131] In step S504, the transfer evaluation values ​​of each candidate chamber can be sorted from high to low. The transfer scheme consisting of the candidate chamber with the highest transfer evaluation value and its corresponding optimal effective candidate transfer time is determined as the highest priority scheme. The sorting result of the transfer evaluation values ​​of each candidate chamber is used as the transfer priority of the target wafer.

[0132] By adopting the technical solution of this application, the available time window of each candidate chamber within a preset time range is first determined based on the availability status of each candidate chamber, thus clarifying the actual receptive status of each candidate chamber in the time dimension. On this basis, each candidate transfer time is compared with the available time window of each candidate chamber one by one, and the effective candidate transfer time corresponding to each candidate chamber within the available time window is selected, while candidate transfer times that cannot be actually executed due to the unavailability of the chamber are excluded, ensuring that the transfer schemes targeted in the subsequent evaluation are all actually feasible.

[0133] Based on the above embodiments, as an optional embodiment, in order to quantify the determination of the transfer evaluation value from two dimensions—the immediate adaptation level of the membrane state at the corresponding valid candidate transfer time and the urgency of timeliness formed by the continuous changes of the precursor membrane during the waiting process—the above step S503 may further include the following steps.

[0134] Step S601: Extract the time matching degree of each candidate chamber at the corresponding effective candidate transfer time from the film state change trend; the time matching degree characterizes the degree of film state matching when the target wafer enters the corresponding candidate chamber at the corresponding effective candidate transfer time.

[0135] Step S602: Based on the cumulative change of the film state change trend of each candidate chamber from the current time to the corresponding effective candidate transfer time, determine the time urgency of each candidate chamber; the cumulative change represents the total change range of the film state change trend from the current time to the corresponding effective candidate transfer time; the time urgency represents the urgency of the target wafer's matching degree decreasing due to the continuous change of the precursor film layer during the waiting period until the corresponding effective candidate transfer time.

[0136] Step S603: Based on the time matching degree and time urgency, obtain the transfer evaluation value of the corresponding candidate chamber.

[0137] In step S601, the time matching degree refers to the degree of conformity between the evolution state of the precursor film layer of the target wafer when it enters the corresponding candidate chamber at the corresponding effective candidate transfer time, extracted from the film state change trend, and the corresponding candidate chamber process requirements.

[0138] In one feasible implementation, the quantization value at the corresponding effective candidate transfer time can be directly read from the film state change trend, and this value can be used as the time matching degree of the candidate chamber at the corresponding effective candidate transfer time. The higher the quantization value, the higher the degree of fit between the evolution state of the precursor film layer and the process requirements when the target wafer is sent into the corresponding candidate chamber at that time, and the higher the time matching degree. The lower the quantization value, the lower the time matching degree.

[0139] In step S602, the cumulative change refers to the total change in the film state change trend between the current time and the corresponding valid candidate transfer time. It can be understood as the total cumulative change in the evolution state of the precursor film layer during the time period while the target wafer continues to wait until the corresponding valid candidate transfer time.

[0140] Similarly, the timeliness urgency refers to the degree of urgency of the target wafer's film-state matching degree decreasing due to continuous waiting, as determined by the aforementioned cumulative changes. It is used to reflect the cumulative consumption of the precursor film state changes on the film-state fit during the process of continuing to wait until the corresponding valid candidate transfer time.

[0141] In one feasible implementation, the gradual changes in the quantified values ​​of the membrane state change trend at each discrete time node between the current moment and the corresponding valid candidate transfer moment can be accumulated sequentially, and the accumulated result can be used as the cumulative change. The cumulative change can then be used as the quantification basis for the timeliness: the larger the cumulative change, the more drastic the change in the evolution state of the precursor membrane layer during the waiting period until the corresponding valid candidate transfer moment, the greater the cumulative decrease in the membrane state matching degree, and the higher the timeliness; the smaller the cumulative change, the lower the timeliness.

[0142] In another feasible implementation, the urgency of timeliness can be approximated by the slope of the membrane change trend near the current moment, and the cumulative change can be approximated by the product of the slope and the time interval between the current moment and the corresponding valid candidate transfer moment, and this product can be used as the quantitative basis for the urgency of timeliness; the steeper the downward slope of the membrane change trend at the current moment and the longer the waiting time interval, the higher the urgency of timeliness.

[0143] In step S603, the transfer evaluation value of the corresponding candidate chamber can be determined comprehensively based on the time matching degree and the time urgency.

[0144] In one feasible implementation, corresponding weights can be assigned to the time matching degree and the time urgency, and the transfer evaluation value can be obtained by weighted summation. The higher the time matching degree, the greater the positive contribution to the transfer evaluation value. The higher the time urgency, the greater the positive contribution to the transfer evaluation value. When the time matching degree is similar, the candidate chamber with the larger cumulative change during the waiting process has a higher transfer evaluation value, indicating that the priority of implementing the transfer plan as early as possible is higher.

[0145] By adopting the technical solution of this application, the time matching degree of each candidate chamber at the corresponding effective candidate transfer time is first extracted from the film change trend. The cross-sectional quantification value reflects the instantaneous film adaptation level when the target wafer enters the corresponding candidate chamber at a specific time. On this basis, the time urgency is determined based on the cumulative change of the film change trend between the current time and the corresponding effective candidate transfer time. The cumulative impact of the continuous evolution of the precursor film layer during the waiting process on the urgency of the transfer timing is introduced into the evaluation scope. Finally, the time matching degree and the time urgency are combined to determine the transfer evaluation value, which effectively improves the evaluation accuracy of the transfer evaluation value in taking into account both the instantaneous adaptation of the film at the transfer time and the urgency of the cumulative change of the film during the waiting process.

[0146] Based on the above embodiments, as an optional embodiment, in order to generate corresponding compensation process parameters according to the deviation between the actual film state and the film state conditions required for optimal processing in the target chamber after the target wafer enters the target chamber, and in combination with the chamber type, so that the target chamber can still effectively process the precursor film layer when there is a certain deviation in the film state, the above-mentioned multi-chamber wafer transfer control method based on FCVD equipment may also include the following steps.

[0147] Step S701: Obtain the target membrane conditions of the target chamber; the target membrane conditions characterize the membrane conditions required for the target chamber to perform effective process treatment on the precursor membrane layer.

[0148] Step S702: Based on the film state characterization value and the target film state conditions, determine the film state deviation of the target wafer; the film state deviation represents the degree of deviation of the current film state of the target wafer relative to the target film state conditions;

[0149] Step S703: Based on the membrane deviation and the chamber type of the target chamber, generate compensation process parameters corresponding to the target chamber;

[0150] Step S704: Control the actuator corresponding to the target chamber to perform processing on the target wafer according to the compensation process parameters.

[0151] In step S701, the target film condition refers to the optimal target film value condition corresponding to the target chamber when performing process processing on the precursor film layer of the target wafer.

[0152] In one feasible implementation, target membrane conditions can be pre-calibrated for each chamber type and stored in the control system as parameters; the corresponding target membrane conditions can be directly retrieved according to the chamber type of the target chamber.

[0153] In step S702, the film state deviation refers to the quantitative result of the deviation of the actual evolution state reflected by the current film state characterization value of the target wafer from the target value, with the target film state conditions as a reference. It can be understood as the comprehensive deviation level of the actual film state of the target wafer at the current moment relative to the film state conditions required for optimal treatment of the target chamber.

[0154] In one feasible implementation, the current film state characterization value of the target wafer can be directly compared with the target film state condition, and the difference between the two can be used as the film state deviation. When the film state characterization value consists of multiple film state components, the difference between each film state component and the corresponding component of the target film state condition can be calculated separately, and then obtained by weighted summation.

[0155] In step S703, the chamber type refers to the result of classifying the target chamber according to the process method and processing function. The compensation process parameters refer to the parameter quantities generated based on the film deviation amount and the target chamber type, and adjusted on the basis of the default process parameters of the target chamber. It can be understood as the compensatory adjustment amount of the corresponding process parameters of the target chamber to ensure that the target chamber can still achieve an effective processing effect when processing target wafers with film deviations.

[0156] In one feasible implementation, a correspondence between membrane deviation and corresponding compensation process parameters can be established in advance for each chamber type, and stored in the control system in the form of a parameter table; using the membrane deviation and the chamber type of the target chamber as indexes, the corresponding compensation process parameters can be obtained by querying or interpolation; the larger the membrane deviation, the larger the corresponding compensation adjustment; under different chamber types, the type and adjustment range of compensation process parameters corresponding to the same membrane deviation may be different.

[0157] It should be noted that steps S701 to S704 are performed after the transfer action in step S105 is completed, the target wafer enters the target chamber, and before the target chamber starts the process, in order to further adjust the processing parameters of the target chamber after the transfer is completed.

[0158] Similarly, the actuator corresponding to the target chamber in step S704 is independent of the actuator responsible for the transfer action in step S105. The former is responsible for executing the process processing actions in the target chamber, while the latter is responsible for the transfer action of moving the target wafer from its current position to the target chamber.

[0159] Furthermore, the target film condition and the process requirements in step S302 are defined differently: the process requirements specify the permissible boundary of the film state that the candidate chamber can effectively process, while the target film condition specifies the target film state value that the target chamber can achieve the optimal processing effect; even if the actual film state of the target wafer meets the process requirements, there may still be a certain deviation between it and the target film condition. The film state deviation is the quantification of the degree of deviation, and the generation of compensation process parameters is to further ensure the processing effect under the deviation condition.

[0160] By adopting the technical solution of this application, the target film conditions required for the target chamber to achieve the optimal processing effect are obtained, and a comparison benchmark is established for determining the film deviation. The film deviation is determined based on the film characterization value of the target wafer and the target film conditions, and the deviation between the actual film state of the target wafer and the film conditions required for optimal processing is quantified. Then, corresponding compensation process parameters are generated in combination with the chamber type of the target chamber, so that the parameter compensation method can be adapted to the processing method of different types of target chambers. Finally, the actuator of the target chamber is controlled to perform processing on the target wafer according to the compensation process parameters, which effectively improves the consistency of the processing effect of the target chamber when processing wafers with film deviation.

[0161] Based on the above embodiments, as an optional embodiment, the compensation process parameters include a combination of at least one or more of the following:

[0162] Processing intensity compensation parameters are used to adjust the processing energy intensity applied from the target chamber to the target wafer based on the amount of film deviation.

[0163] Processing time compensation parameters are used to adjust the duration of process processing performed on the target wafer in the target chamber based on the amount of film deviation.

[0164] The temperature compensation parameter is used to adjust the temperature conditions of the process environment in the target chamber according to the amount of membrane deviation.

[0165] The processing atmosphere compensation parameter is used to adjust the atmosphere composition of the process environment in the target chamber according to the amount of membrane deviation.

[0166] Among them, the processing intensity compensation parameter refers to the parameter quantity that adjusts the intensity of the process energy applied from the target chamber to the target wafer based on the film state deviation. It is used to compensate for the processing effect deviation caused by the film state deviation by changing the processing energy intensity received by the target wafer per unit time.

[0167] For example, for a UV curing chamber, the treatment intensity compensation parameter can be reflected in the adjustment of UV irradiation power or irradiation intensity per unit area. When the UV-responsive activity of the target wafer precursor film is lower than the target film conditions, the UV irradiation intensity can be increased accordingly to compensate for the impact of low activity on the curing effect. For a plasma treatment chamber, the treatment intensity compensation parameter can be reflected in the adjustment of plasma excitation power. When the convertible activity of the target wafer precursor film is lower than the target film conditions, the plasma excitation power can be increased accordingly to ensure that the modification depth of the film by the plasma meets the treatment requirements.

[0168] Among them, the processing time compensation parameter refers to the parameter quantity that adjusts the duration of the process performed by the target chamber on the target wafer based on the amount of film deviation. It is used to compensate for the insufficient or excessive processing effect caused by film deviation by extending or shortening the processing time of the target chamber on the target wafer.

[0169] For example, for a UV curing chamber, the processing time compensation parameter can be reflected in the adjustment of the UV irradiation duration. When the polymerization process of the target wafer precursor film has progressed to a certain extent relative to the target film conditions, but the responsiveness is still within the effective range, the irradiation duration can be appropriately extended while maintaining the irradiation intensity to ensure that the film achieves sufficient curing conversion. For a plasma treatment chamber, the processing time compensation parameter can be reflected in the adjustment of the plasma treatment duration. When the evolution state of the target wafer precursor film deviates to a certain extent from the target film conditions, the plasma treatment duration can be extended accordingly to ensure that the modification depth and modification uniformity meet the treatment requirements.

[0170] Among them, the processing temperature compensation parameter refers to the parameter quantity that adjusts the temperature conditions of the target chamber process environment based on the film state deviation. It is used to affect the conversion rate and processing effect of the precursor film during the process by adjusting the temperature conditions inside the target chamber or at the wafer carrier stage.

[0171] For example, for a plasma processing chamber, the processing temperature compensation parameter can be reflected in the adjustment amount of the wafer stage temperature setting. When the target wafer precursor film has certain deficiencies in thermal activation and transformation relative to the target film state conditions, the wafer stage temperature can be appropriately increased to promote the thermal activation and transformation process of the precursor film during plasma processing and compensate for the influence of film state deviation on the modification effect. For a UV curing chamber, the processing temperature compensation parameter can be reflected in the adjustment amount of the auxiliary thermal field setting within the chamber. Appropriately adjusting the chamber temperature helps to improve the photothermal synergistic curing effect of the precursor film during UV irradiation.

[0172] Among them, the treatment atmosphere compensation parameter refers to the parameter quantity that adjusts the atmosphere composition of the target chamber process treatment environment based on the membrane state deviation. It is used to influence the chemical environment of the precursor membrane during the treatment process by changing the atmosphere conditions of the target chamber process treatment environment, thereby compensating for the treatment effect deviation introduced by the membrane state deviation.

[0173] For example, for a plasma processing chamber, the processing atmosphere compensation parameter can be reflected in the adjustment of the flow rate ratio of each process gas in the chamber, such as the flow rate ratio of helium, nitrogen, or oxygen-containing gas. When the evolution state of the target wafer precursor film deviates from the target film condition in terms of the proportion of modifiable components, the atmosphere composition can be appropriately adjusted to make the composition and intensity of the chemical reaction on the film during plasma processing closer to the ideal processing state. For a UV curing chamber, the processing atmosphere compensation parameter can be reflected in the adjustment of the ratio of inert gas to active gas in the chamber's protective atmosphere or reactive atmosphere. When the residual solvent content in the target wafer precursor film is higher than the target film condition, gas components that help accelerate the removal of residual solvent can be appropriately introduced into the UV processing atmosphere to improve the curing effect.

[0174] In one feasible implementation, the treatment intensity compensation parameter, treatment duration compensation parameter, treatment temperature compensation parameter, and treatment atmosphere compensation parameter can be used individually, or two or more of them can be combined depending on the magnitude of the film deviation and the type of film components involved in the film deviation. When the film deviation is small, only one of the treatment intensity compensation parameter or the treatment duration compensation parameter can be used for single-dimensional compensation. When the film deviation is large or involves the comprehensive deviation of multiple film components, the treatment intensity compensation parameter, treatment duration compensation parameter, and treatment atmosphere compensation parameter can be combined to achieve more comprehensive deviation compensation through multi-parameter coordinated adjustment.

[0175] For example, when a target wafer enters the UV curing chamber, its active state component only shows a slight decrease relative to the target film conditions, with a small deviation. The control system determines that only the processing time compensation parameter and an appropriate extension of the UV irradiation time are needed to meet the curing conversion requirements, without the need to introduce other compensation parameters. However, for another target wafer, due to a longer waiting time, the active state component decreases significantly and the polycondensation process sub-component has accumulated considerably. The control system determines that a single parameter is insufficient to cover the overall deviation, and accordingly uses a combination of processing intensity compensation parameters, processing time compensation parameters, and processing atmosphere compensation parameters to compensate from three dimensions: light intensity, irradiation time, and atmosphere composition, respectively, to ensure that the final curing effect meets the process requirements.

[0176] Optionally, the adjustment range of each type of compensation parameter can be preset with corresponding upper limits to protect the process equipment components in the target chamber from damage due to excessive parameter adjustment. When the adjustment range of a certain type of compensation process parameter generated based on the membrane deviation exceeds the corresponding upper limit, the compensation amount corresponding to the excess can be allocated to other available compensation parameter types after the adjustment amount of that type of compensation parameter is truncated to the upper limit value, so as to jointly bear the compensation requirement of the remaining deviation in a multi-parameter combination.

[0177] It should be noted that, for the same target chamber, the compensation process parameters for film deviations have different focuses: the processing intensity compensation parameter and the processing time compensation parameter mainly compensate for film deviations by adjusting the magnitude and cumulative amount of processing energy received by the target wafer, and the two are somewhat interchangeable; the processing temperature compensation parameter mainly affects the conversion rate of the precursor film by adjusting the thermal field conditions; the processing atmosphere compensation parameter mainly affects the direction and intensity of chemical reactions during the precursor film processing by adjusting the chemical environment; in the scenario of multi-parameter combination compensation, the parameter type with the most significant compensation effect can be selected and adjusted first according to the specific characteristics of the deviation of each film component, so as to improve the pertinence of the compensation effect.

[0178] For example, when the film state deviation of the target wafer is mainly manifested as a high sub-component of the polycondensation process and a reduced film fluidity, the compensation effect of the processing temperature compensation parameter is usually better than simply adjusting the processing intensity. The control system can prioritize generating the processing temperature compensation parameter, promote the further transformation of the polycondensation structure by increasing the temperature of the wafer carrier stage, and then supplement it with the processing time compensation parameter, rather than dispersing the limited compensation resources to parameter types with weaker compensation effects.

[0179] By adopting the technical solution of this application, when generating compensation process parameters, one or more of the following parameters can be flexibly selected and combined based on the film deviation of the target wafer and the chamber type of the target chamber: processing intensity compensation parameter, processing duration compensation parameter, processing temperature compensation parameter, and processing atmosphere compensation parameter. The film deviation is compensated in a targeted manner from four dimensions: process energy intensity, processing duration, processing ambient temperature, and processing atmosphere composition. This improves the stability of the processing effect of the target chamber when processing wafers with film deviation.

[0180] Figure 2 A schematic diagram of a multi-chamber wafer transfer control system based on an FCVD device is provided for an embodiment of this application, as shown below. Figure 2 As shown, the multi-chamber wafer transfer control system based on FCVD equipment includes:

[0181] The film state acquisition module is used to obtain the film state characterization value of the target wafer; the film state characterization value characterizes the state of the precursor film layer of the target wafer as it evolves over time after deposition is completed; the target wafer is the wafer that is waiting for transfer after the completion of the front-end deposition.

[0182] The trend prediction module is used to predict the film state change trend of the target wafer when it enters multiple candidate chambers at the candidate transfer time, based on the film state characterization value.

[0183] The priority evaluation module is used to determine the transfer priority of the target wafer based on the film state change trend of the target wafer and the availability status of each candidate chamber;

[0184] The scheduling and planning module is used to determine the target chamber and the transfer time from multiple candidate chambers based on the transfer priority;

[0185] The transfer control module is used to control the actuator of the FCVD equipment to transfer the target wafer to the target chamber at the transfer moment.

[0186] Based on the above embodiments, as an optional embodiment, the film state acquisition module is further configured to acquire the front-end deposition process parameters and waiting time of the target wafer; determine the film state components based on the front-end deposition process parameters and waiting time of the target wafer; and obtain film state characterization values ​​based on the film state components; wherein, the film state components include at least two of the following: a quality state component, which characterizes the current effective quality level of the precursor film layer of the target wafer; an active state component, which characterizes the responsiveness of the precursor film layer of the target wafer to subsequent processing; and an evolutionary state component, which characterizes the degree of volatilization and polycondensation process of the precursor film layer of the target wafer.

[0187] Based on the above embodiments, as an optional embodiment, the trend prediction module is further configured to predict the predicted film state of the precursor film layer of the target wafer at each candidate transfer time based on the film state characterization value and the time interval; the time interval is the time interval between the current time and each candidate transfer time; obtain the process processing requirements of each candidate chamber; the process processing requirements characterize the precursor film state conditions required for the corresponding candidate chamber to effectively process the wafer; determine the matching degree between the target wafer and each candidate chamber based on the predicted film state at each candidate transfer time and the process processing requirements of each candidate chamber; and obtain the film state change trend of the target wafer when it enters multiple candidate chambers at each candidate transfer time based on the matching degree between the target wafer and each candidate chamber.

[0188] Based on the above embodiments, as an optional embodiment, the trend prediction module is further configured to compare each component of the predicted film state at each candidate transfer time with the corresponding component threshold specified by the process requirements of the corresponding candidate chamber, and determine the component deviation value of each film state component; the film state component is each sub-state quantity constituting the predicted film state; the component deviation value characterizes the deviation of the corresponding film state component relative to the component threshold; based on each component deviation value, the degree of deviation between the predicted film state at each candidate transfer time and the process requirements of the corresponding candidate chamber is determined; each component deviation value is compared with the parameter compensation capability of the process parameters of the corresponding candidate chamber to determine the component recoverability of each film state component; the parameter compensation capability characterizes the upper limit of the component deviation value that the corresponding candidate chamber can compensate by adjusting the process parameters; based on each component recoverability, the compensation recoverability of the target wafer in the corresponding candidate chamber is determined; and based on the degree of deviation and the compensation recoverability, the matching degree between the target wafer and the corresponding candidate chamber is obtained.

[0189] Based on the above embodiments, as an optional embodiment, the priority evaluation module is further configured to: determine the available time window of each candidate chamber based on the availability status of each candidate chamber; compare each candidate transfer time with the available time window of each candidate chamber to determine the effective candidate transfer time corresponding to each candidate chamber within the available time window; determine the transfer evaluation value of each candidate chamber based on the film state change trend of each candidate chamber at the corresponding effective candidate transfer time; the transfer evaluation value characterizes the suitability of transferring the target wafer to the corresponding candidate chamber at the corresponding effective candidate transfer time; and obtain the transfer priority of the target wafer based on the transfer evaluation value of each candidate chamber.

[0190] Based on the above embodiments, as an optional embodiment, the priority evaluation module is further used to extract the time matching degree of each candidate chamber at the corresponding effective candidate transfer time from the film state change trend; the time matching degree characterizes the degree of film state matching when the target wafer enters the corresponding candidate chamber at the corresponding effective candidate transfer time; based on the cumulative change of the film state change trend of each candidate chamber from the current time to the corresponding effective candidate transfer time, the time urgency of each candidate chamber is determined; and the transfer evaluation value of the corresponding candidate chamber is obtained according to the time matching degree and the time urgency.

[0191] Based on the above embodiments, as an optional embodiment, the multi-chamber wafer transfer control system based on FCVD equipment further includes: a parameter compensation module, used to obtain the target film state conditions of the target chamber; the target film state conditions characterize the film state conditions required for the target chamber to perform effective process processing on the precursor film layer; based on the film state characterization value and the target film state conditions, determine the film state deviation of the target wafer; the film state deviation characterizes the degree of deviation of the current film state of the target wafer relative to the target film state conditions; based on the film state deviation and the chamber type of the target chamber, generate compensation process parameters corresponding to the target chamber; and control the actuator corresponding to the target chamber to perform processing on the target wafer according to the compensation process parameters.

[0192] Figure 3 This is a schematic diagram of the physical structure of an electronic device provided in an embodiment of this application, such as... Figure 3 As shown, the electronic device may include a processor 310, a communications interface 320, a memory 330, and a communication bus 340. The processor 310, communications interface 320, and memory 330 communicate with each other via the communication bus 340. The processor 310 can call logic instructions from the memory 330 to execute a multi-chamber wafer transfer control method based on the FCVD device.

[0193] Furthermore, the logical instructions in the aforementioned memory 330 can be implemented as software functional units and, when sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0194] On the other hand, this application also provides a computer program product, which includes a computer program that can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer is able to execute the multi-chamber wafer transfer control method based on the FCVD device provided by the above methods.

[0195] In another aspect, this application also provides a non-transitory computer-readable storage medium storing a computer program thereon, which, when executed by a processor, is implemented to perform the multi-chamber wafer transfer control method based on the FCVD device provided by the above methods.

[0196] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0197] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0198] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A multi-chamber wafer transfer control method based on FCVD equipment, characterized in that, include: Obtain the film state characterization value of the target wafer; the film state characterization value characterizes the state of the precursor film layer of the target wafer as it evolves over time after deposition; The target wafer is a wafer that has completed the front-end deposition and is in a state of waiting for transfer; Based on the film characterization values, predict the film change trend of the target wafer when it enters multiple candidate chambers at the candidate transfer time; Based on the film state change trend of the target wafer and the availability status of each candidate chamber, a transfer priority is determined for the target wafer; The target chamber and transfer time are determined from the plurality of candidate chambers according to the transfer priority; The actuator controlling the FCVD equipment transfers the target wafer to the target chamber at the transfer moment; The step of predicting the film state change trend of the target wafer when it enters multiple candidate chambers at candidate transfer times, based on the film state characterization values, includes: Based on the film state characterization values ​​and time intervals, the predicted film state of the precursor film layer of the target wafer at each candidate transfer time is predicted; the time interval is the time interval between the current time and each candidate transfer time. Obtain the process requirements for each candidate chamber; the process requirements characterize the precursor film conditions required by the corresponding candidate chamber to effectively process the wafer. Based on the predicted film state at each candidate transfer time and the process requirements of each candidate chamber, the matching degree between the target wafer and each candidate chamber is determined. Based on the matching degree between the target wafer and each of the candidate chambers, the film state change trend of the target wafer when it enters multiple candidate chambers at the candidate transfer time is obtained; The process of determining a transfer priority for the target wafer based on the film state change trend of the target wafer and the availability status of each candidate chamber includes: Based on the availability status of each candidate chamber, the availability time window for each candidate chamber is determined; Each candidate transfer time is compared with the available time window of each candidate chamber to determine the effective candidate transfer time corresponding to each candidate chamber within the available time window; Based on the film state change trend of each candidate chamber at the corresponding effective candidate transfer time, the transfer evaluation value of each candidate chamber is determined; the transfer evaluation value characterizes the suitability of transferring the target wafer to the corresponding candidate chamber at the corresponding effective candidate transfer time. Based on the transfer evaluation values ​​of each candidate chamber, the transfer priority of the target wafer is obtained.

2. The multi-chamber wafer transfer control method based on FCVD equipment according to claim 1, characterized in that, The process of obtaining the film-state characterization values ​​of the target wafer includes: Obtain the front-end deposition process parameters and waiting time of the target wafer; The film components are determined based on the front-end deposition process parameters and waiting time of the target wafer; The membrane characterization values ​​are obtained based on the membrane state components; The membrane component includes at least two of the following: A quality state component, wherein the quality state component characterizes the current effective quality level of the precursor film layer of the target wafer; The active state component characterizes the responsiveness of the precursor film layer of the target wafer to subsequent processing. Evolutionary state components characterize the degree of volatilization and polymerization process of the precursor film layer of the target wafer.

3. The multi-chamber wafer transfer control method based on FCVD equipment according to claim 2, characterized in that, The determination of the matching degree between the target wafer and each candidate cavity based on the predicted film state at each candidate transfer time and the process requirements of each candidate cavity includes: Each membrane component of the predicted membrane state at each candidate transition time is compared with the corresponding component threshold specified by the process requirements of the corresponding candidate chamber to determine the component deviation value of each membrane component; the membrane component is each sub-state quantity constituting the predicted membrane state; the component deviation value characterizes the deviation of the corresponding membrane component relative to the component threshold. Based on the deviation values ​​of each component, the degree of deviation between the predicted membrane state and the process requirements of the corresponding candidate chamber at each candidate transfer time is determined; The component deviation value of each component is compared with the parameter compensation capability of the corresponding candidate chamber's process parameters to determine the component recoverability of each membrane component; the parameter compensation capability characterizes the upper limit of the component deviation value that the corresponding candidate chamber can compensate for by adjusting the process parameters. Based on the recoverability of each component, the compensation recoverability of the target wafer in the corresponding candidate chamber is determined; The matching degree between the target wafer and the corresponding candidate chamber is obtained based on the degree of deviation and the recoverability of the compensation.

4. The multi-chamber wafer transfer control method based on FCVD equipment according to claim 1, characterized in that, The determination of the transfer evaluation value for each candidate chamber based on the membrane state change trend at the corresponding effective candidate transfer time includes: From the film state change trend, the time matching degree of each candidate chamber at the corresponding effective candidate transfer time is extracted; the time matching degree characterizes the degree of film state matching when the target wafer enters the corresponding candidate chamber at the corresponding effective candidate transfer time. Based on the cumulative change in the membrane state of each candidate chamber from the current time to the corresponding effective candidate transfer time, the time urgency of each candidate chamber is determined. Based on the time matching degree and the time urgency, the transfer evaluation value of the corresponding candidate chamber is obtained.

5. The multi-chamber wafer transfer control method based on FCVD equipment according to claim 1, characterized in that, The method further includes: Obtain the target membrane conditions of the target chamber; the target membrane conditions characterize the membrane conditions required for the target chamber to perform effective process treatment on the precursor membrane layer; Based on the film state characterization value and the target film state conditions, the film state deviation of the target wafer is determined; the film state deviation represents the degree of deviation of the current film state of the target wafer relative to the target film state conditions. Based on the membrane deviation and the chamber type of the target chamber, compensation process parameters corresponding to the target chamber are generated; The actuator corresponding to the target chamber is controlled to perform processing on the target wafer according to the compensation process parameters.

6. The multi-chamber wafer transfer control method based on FCVD equipment according to claim 5, characterized in that, The compensation process parameters include a combination of at least one or more of the following: Processing intensity compensation parameters are used to adjust the processing energy intensity applied from the target chamber to the target wafer based on the film deviation amount. A processing time compensation parameter is used to adjust the duration of the process processing performed by the target chamber on the target wafer based on the film deviation amount. The temperature compensation parameter is processed to adjust the temperature conditions of the process environment in the target chamber according to the membrane deviation. The processing atmosphere compensation parameter is used to adjust the atmosphere composition of the process environment in the target chamber according to the membrane deviation.

7. A multi-chamber wafer transfer control system based on an FCVD device, used to implement the multi-chamber wafer transfer control method based on an FCVD device as described in any one of claims 1-6, characterized in that, include: The film state acquisition module is used to obtain the film state characterization value of the target wafer; the film state characterization value characterizes the state of the precursor film layer of the target wafer as it evolves over time after deposition is completed; the target wafer is a wafer that is in a waiting-for-transfer state after the completion of the front-end deposition. The trend prediction module is used to predict the trend of film change when the target wafer enters multiple candidate chambers at the candidate transfer time, based on the film characterization value. The priority evaluation module is used to determine the transfer priority of the target wafer based on the film state change trend of the target wafer and the availability status of each candidate chamber; The scheduling and planning module is used to determine the target chamber and the transfer time from the multiple candidate chambers according to the transfer priority; A transfer control module is used to control the actuator of the FCVD device to transfer the target wafer to the target chamber at the transfer moment.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the multi-chamber wafer transfer control method based on an FCVD device as described in any one of claims 1-6.

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