Ultra-wideband anti-reflection film suitable for wave band of 480-1970nm and preparation method thereof
By designing an ultrawideband antireflective coating suitable for the 480-1970nm wavelength band, and employing a multilayer film structure and precise fabrication method, the problem of limited bandwidth in existing technologies has been solved, achieving high transmittance and environmental adaptability, thus meeting the needs of new optical instruments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- YUNNAN KIRO CH PHOTONICS
- Filing Date
- 2026-01-20
- Publication Date
- 2026-04-21
AI Technical Summary
Existing antireflective coating technologies have limited bandwidth in the visible and short-wave infrared bands, which cannot meet the ultra-wide spectral application requirements of new optical instruments.
An ultrawideband antireflective coating suitable for the 480-1970nm wavelength band was designed. It adopts a multilayer film structure, including a film structure between a substrate layer and an air layer. It uses H-QK3, H-LaF1, H-LaF52, H-ZF3, H-ZF4 and H-ZF88 materials and is prepared by electron beam evaporation and RF source-assisted deposition to ensure precise control of the thickness and deposition parameters of each film layer.
It achieved a high transmittance of ≥97.5% in the 480-1970nm band and passed the environmental adaptability test of GJB2485A-2019. The bandwidth ratio reached 4, which is at the leading level at home and abroad.
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Figure CN121896582A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of visible light-shortwave infrared coating technology, specifically to an ultrawideband antireflective coating applicable to the 480-1970nm wavelength band and its preparation method. Background Technology
[0002] With the rapid development of technologies such as photoelectric detection and high-performance optical systems, visible-shortwave infrared broadband thermal imagers have become a hot topic in the field of optics due to their unique advantage of simultaneously capturing information in the visible and shortwave infrared bands. Because of their extremely wide operating bandwidth, their optical systems have placed new and higher demands on the antireflection coatings of optical components, resulting in a significant expansion of the antireflection coating's bandwidth.
[0003] Generally, the bandwidth ratio (λmax / λmin) can be used to characterize the fabrication difficulty of broadband antireflection coatings. Existing antireflection coating technologies can achieve high-performance antireflection coating fabrication in the visible light and short-wave infrared bands respectively, but their bandwidth is limited and cannot simultaneously meet the needs of ultra-wide spectral applications in both visible light and short-wave infrared, thus restricting the development of visible-short-wave infrared lenses. Summary of the Invention
[0004] The purpose of this application is to provide an ultra-wideband antireflective film applicable to the 480-1970nm band and its preparation method, so as to solve the problem that the bandwidth of the antireflective film in the prior art is limited and cannot meet the requirements of new optical instruments.
[0005] To achieve the above objectives, this application provides an ultra-wideband antireflective coating applicable to the 480-1970nm band, comprising: a substrate layer and an air layer disposed sequentially from bottom to top, and a film layer structure disposed between the substrate layer and the air layer;
[0006] The material of the base layer is any one of H-QK3, H-LaF1, H-LaF52, H-ZF3, H-ZF4 and H-ZF88;
[0007] The membrane structure is a multilayer membrane, including at least two of the following layers connected from bottom to top: Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, and MgF2 layer.
[0008] Optionally, when the substrate layer is H-ZF88 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 48.9±2nm, SiO2 layer 39.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 30.1±2nm, Ta2O5 layer 69.9±2nm, SiO2 layer 16.0±2nm, Ta2O5 layer 219.7±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.5±2nm, SiO2 layer 54.7±2nm, Ta2O5 layer 32.7±2nm, and MgF2 layer 160.3±2nm.
[0009] Optionally, when the substrate layer is H-LaF1 or H-LaF52 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 25.4±2nm, SiO2 layer 48.2±2nm, Ta2O5 layer 42.1±2nm, SiO2 layer 38.2±2nm, Ta2O5 layer 56.7±2nm, SiO2 layer 19.5±2nm, Ta2O5 layer 217.3±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.7±2nm, SiO2 layer 54.9±2nm, Ta2O5 layer 20.5±2nm, and MgF2 layer 161.1±2nm.
[0010] Optionally, when the substrate layer is H-ZF3 or H-ZF4 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 19.9±2nm, SiO2 layer 55.7±2nm, Ta2O5 layer 36.8±2nm, SiO2 layer 42.8±2nm, Ta2O5 layer 53.7±2nm, SiO2 layer 22.7±2nm, Ta2O5 layer 214.2±2nm, SiO2 layer 17.3±2nm, Ta2O5 layer 49.2±2nm, SiO2 layer 48.7±2nm, Ta2O5 layer 22.3±2nm, and MgF2 layer 160.7±2nm.
[0011] Optionally, when the substrate layer is H-QK3 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 19.7±2nm, SiO2 layer 76.2±2nm, Ta2O5 layer 24.0±2nm, SiO2 layer 50.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 21.3±2nm, Ta2O5 layer 150.1±2nm, SiO2 layer 18.9±2nm, Ta2O5 layer 42.0±2nm, SiO2 layer 55.1±2nm, Ta2O5 layer 20.4±2nm, and MgF2 layer 159.6±2nm.
[0012] To achieve the above objectives, this application also provides a method for preparing the aforementioned ultrawideband antireflective coating applicable to the 480-1970nm wavelength band, comprising:
[0013] Step S1: Deposit a film structure on the substrate surface, sequentially depositing Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, and Ta2O5 layer, all using electron beam evaporation. The electron beam evaporation rate of the Ta2O5 layer is controlled at 3-5 Å / s; the electron beam evaporation rate of the SiO2 layer is controlled at 8-12 Å / s. Furthermore, RF radio frequency source-assisted deposition is used simultaneously when depositing the aforementioned film structure on the substrate surface.
[0014] Step S2: Deposit the outermost MgF2 layer of the film structure without using an RF source to assist in deposition. The evaporation rate is controlled at 6-10 Å / s, and no RF source is used to assist in deposition.
[0015] Optionally, in step S1, the plating temperature is controlled at 340–360°C.
[0016] Optionally, in step S1, the control parameters in the radio frequency source-assisted deposition method are as follows: the SiO2 layer is filled with oxygen gas, the gas flow rate is 50±10 sccm, the Acc.voltage is 1000±10V, the Acc.current is 1200±10 mA, the Suppressor voltage is 500±10V, the Bias current is 2000±10mA, and the evaporation beam current is 280±20 mA.
[0017] Optionally, in step S1, the Ta2O5 layer is filled with oxygen gas, the gas flow rate is 70±10 sccm, the Acc.voltage is 1000±10V, the Acc.current is 1200±10mA, the Suppressor voltage is 500±10V, the Bias current is 2000±10 mA, and the evaporation beam current is 450±20 mA.
[0018] Optionally, in step S2, the plating temperature is controlled at 340–360°C.
[0019] The embodiments of this application have the following advantages:
[0020] Compared with existing technologies, the ultra-wideband antireflective coating and its preparation method applicable to the 480-1970nm wavelength band in this application are based on a reinforced film stack composed of SiO2, Ta2O5, and MgF2 layers. This achieves a transmittance of ≥97.5% for the antireflective coating in the 480-1970nm wavelength band, and the environmental adaptability of the film meets the requirements of GJB2485A-2019, specifically clauses 3.3.1 (adhesion test), 3.6.1 (temperature test), 3.6.3 (damp heat test), 3.6.8 (solution resistance test), and 3.3.2.2 (moderate friction test). The bandwidth ratio of this application reaches 4, which is among the leading levels both domestically and internationally. Attached Figure Description
[0021] To more clearly illustrate the embodiments of this application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely exemplary, and those skilled in the art can derive other embodiments based on the provided drawings without creative effort.
[0022] Figure 1 A cross-sectional view of an ultrawideband antireflective coating suitable for the 480-1970nm wavelength band, provided for at least one embodiment of this application;
[0023] Figure 2 Transmittance spectrum curve of an ultra-wideband antireflection film in the 480-1970nm band prepared by a method for preparing an ultra-wideband antireflection film applicable to the 480-1970nm band according to an embodiment of this application.
[0024] Figure 3 The transmittance spectrum curve of the ultra-wideband antireflection film in the 480-1970nm band prepared by a method for preparing an ultra-wideband antireflection film applicable to the 480-1970nm band according to an embodiment of this application. Detailed Implementation
[0025] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0026] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Unless otherwise expressly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.
[0027] Furthermore, the technical features involved in the different embodiments of this application described below can be combined with each other as long as they do not conflict with each other.
[0028] This application provides an ultrawideband antireflective coating applicable to the 480-1970nm wavelength band and its preparation method, referencing... Figure 1 ,include:
[0029] A base layer and an air layer are arranged sequentially from bottom to top, and a membrane structure is disposed between the base layer and the air layer;
[0030] The material of the base layer is any one of H-QK3, H-LaF1, H-LaF52, H-ZF3, H-ZF4 and H-ZF88;
[0031] The membrane structure is a multilayer membrane, including at least two of the following layers connected from bottom to top: Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, and MgF2 layer.
[0032] Specifically, the film structure satisfies the requirements of alternating high and low refractive index materials, thereby improving the transmittance in the ultra-wide wavelength range of 480-1970nm.
[0033] The thickness of each layer of the membrane structure is adjusted according to the material of the base layer.
[0034] In some embodiments, when the substrate layer is H-ZF88 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 48.9±2nm, SiO2 layer 39.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 30.1±2nm, Ta2O5 layer 69.9±2nm, SiO2 layer 16.0±2nm, Ta2O5 layer 219.7±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.5±2nm, SiO2 layer 54.7±2nm, Ta2O5 layer 32.7±2nm, and MgF2 layer 160.3±2nm.
[0035] In some embodiments, when the substrate layer is H-LaF1 or H-LaF52 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 25.4±2nm, SiO2 layer 48.2±2nm, Ta2O5 layer 42.1±2nm, SiO2 layer 38.2±2nm, Ta2O5 layer 56.7±2nm, SiO2 layer 19.5±2nm, Ta2O5 layer 217.3±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.7±2nm, SiO2 layer 54.9±2nm, Ta2O5 layer 20.5±2nm, and MgF2 layer 161.1±2nm.
[0036] In some embodiments, when the substrate layer is H-ZF3 or H-ZF4 material, the thickness of each film layer in the film structure is as follows: Ta2O5 layer 19.9±2nm, SiO2 layer 55.7±2nm, Ta2O5 layer 36.8±2nm, SiO2 layer 42.8±2nm, Ta2O5 layer 53.7±2nm, SiO2 layer 22.7±2nm, Ta2O5 layer 214.2±2nm, SiO2 layer 17.3±2nm, Ta2O5 layer 49.2±2nm, SiO2 layer 48.7±2nm, Ta2O5 layer 22.3±2nm, and MgF2 layer 160.7±2nm.
[0037] In some embodiments, when the substrate layer is H-QK3 material, the thickness of each film layer in the film structure is as follows: Ta2O5 layer 19.7±2nm, SiO2 layer 76.2±2nm, Ta2O5 layer 24.0±2nm, SiO2 layer 50.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 21.3±2nm, Ta2O5 layer 150.1±2nm, SiO2 layer 18.9±2nm, Ta2O5 layer 42.0±2nm, SiO2 layer 55.1±2nm, Ta2O5 layer 20.4±2nm, and MgF2 layer 159.6±2nm.
[0038] This application also provides a method for preparing an ultrawideband antireflective coating applicable to the 480-1970nm wavelength band, comprising:
[0039] Step S1: A film structure is deposited on the substrate surface, consisting of Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, and Ta2O5 layer, all deposited using electron beam evaporation. The electron beam evaporation rate of the Ta2O5 layer is controlled at 3-5 Å / s, and the electron beam evaporation rate of the SiO2 layer is controlled at 8-12 Å / s. Furthermore, RF radio frequency source-assisted deposition is used simultaneously when depositing the aforementioned film structure on the substrate surface.
[0040] Step S2: Deposit the outermost MgF2 layer of the film structure without using an RF source to assist in deposition. The evaporation rate is controlled at 6-10 Å / s, and no RF source is used for assisted deposition.
[0041] In some embodiments, in step S1, the plating temperature is controlled at 340–360°C.
[0042] In some embodiments, in step S1, the control parameters in the radio frequency source-assisted deposition method are: the SiO2 layer is filled with oxygen gas, the gas flow rate is 50±10 sccm, the Acc. voltage is 1000±10V, the Acc. current is 1200±10mA, the Suppressor voltage is 500±10V, the Bias current is 2000±10mA, and the evaporation beam current is 280±20 mA.
[0043] The Ta2O5 layer is filled with oxygen gas at a flow rate of 70±10 sccm, with an Acc. voltage of 1000±10V, an Acc. current of 1200±10mA, a Suppressor voltage of 500±10V, a Bias current of 2000±10mA, and an evaporation beam current of 450±20 mA.
[0044] In some embodiments, in step S2, the plating temperature is controlled at 340–360°C.
[0045] Specifically, during the sequential deposition of Ta2O5, SiO2, and other layers on the substrate surface, the deposition temperature was controlled at 350℃. An RF source was used to assist deposition. The SiO2 layer was filled with oxygen at a flow rate of 50 sccm, with an Acc. voltage of 1000V, an Acc. current of 1200mA, a Suppressor voltage of 500V, a Bias current of 2000mA, and an evaporation beam current of 280mA. The Ta2O5 layer was filled with oxygen at a flow rate of 70 sccm, with an Acc. voltage of 1000V, an Acc. current of 1200mA, a Suppressor voltage of 500V, a Bias current of 2000mA, and an evaporation beam current of 450mA. Then, at 350°C without the assistance of an RF source, a MgF2 layer is deposited to obtain the ultra-wideband antireflective coating applicable to the 480-1970nm band described in this application.
[0046] The transmittance of the ultra-wideband antireflective film was measured, and the average transmittance of the antireflective film was found to be greater than 97.5%.
[0047] In some embodiments, a Φ32mm lens component made of H-ZF88 material is selected, and a film layer structure is deposited on one surface of the substrate in the wavelength range of 480-1970nm. At 352°C, a 48.9nm Ta2O5 layer, a 39.7nm SiO2 layer, a 41.1nm Ta2O5 layer, a 30.1nm SiO2 layer, a 69.9nm Ta2O5 layer, a 16.0nm SiO2 layer, a 219.7nm Ta2O5 layer, a 17.8nm SiO2 layer, a 49.5nm Ta2O5 layer, a 54.7nm SiO2 layer, and a 32.7nm Ta2O5 layer are deposited sequentially. Simultaneously, an RF-assisted deposition method was employed. The SiO2 layer was filled with oxygen gas at a flow rate of 50 sccm, with an Acc. voltage of 1005 V, an Acc. current of 1202 mA, a Suppressor voltage of 502 V, a Bias current of 2000 mA, and an evaporation beam current of 285 mA. The Ta2O5 layer was filled with oxygen gas at a flow rate of 70 sccm, with an Acc. voltage of 1002 V, an Acc. current of 1202 mA, a Suppressor voltage of 505 V, a Bias current of 2003 mA, and an evaporation beam current of 454 mA. Then, a 160.3 nm MgF2 layer was deposited at 352 °C under RF-assisted conditions, resulting in the ultra-wideband antireflective coating applicable to the 480-1970 nm wavelength band described in this application.
[0048] like Figure 2 As shown, the transmittance of the ultra-wideband antireflective coating in the 480-1970nm band was measured, and the average transmittance of the antireflective coating was found to be 97.54%.
[0049] In some embodiments, a Φ22.5mm lens component made of H-LaF1 or a Φ25mm lens component made of H-LaF62 is selected. A film layer structure is deposited on one surface of the substrate in the wavelength range of 480-1970nm. At 348°C, a 25.4nm Ta2O5 layer, a 48.2nm SiO2 layer, a 42.1nm Ta2O5 layer, a 38.2nm SiO2 layer, a 56.7nm Ta2O5 layer, a 19.5nm SiO2 layer, a 217.3nm Ta2O5 layer, a 17.8nm SiO2 layer, a 49.7nm Ta2O5 layer, a 54.9nm SiO2 layer, and a 20.5nm Ta2O5 layer are deposited sequentially. Simultaneously, an RF-assisted deposition method was employed. The SiO2 layer was filled with oxygen gas at a flow rate of 50 sccm, with an Acc. voltage of 1000 V, an Acc. current of 1198 mA, a Suppressor voltage of 495 V, a Bias current of 1999 mA, and an evaporation beam current of 281 mA. The Ta2O5 layer was filled with oxygen gas at a flow rate of 70 sccm, with an Acc. voltage of 999 V, an Acc. current of 1200 mA, a Suppressor voltage of 501 V, a Bias current of 1998 mA, and an evaporation beam current of 451 mA. Then, a 161.1 nm MgF2 layer was deposited at 348 °C under RF-assisted conditions, resulting in the ultra-wideband antireflective coating applicable to the 480-1970 nm wavelength band described in this application.
[0050] The transmittance of the high optical performance and environmentally adaptable antireflective film was measured, and the average transmittance of the antireflective film was found to be 97.70%.
[0051] In some embodiments, a Φ19mm lens component made of H-ZF3 or a Φ25mm lens component made of H-ZF2 is selected. A film layer structure is deposited on one surface of the substrate in the wavelength range of 480-1970nm. At 354°C, a 19.9nm Ta2O5 layer, a 55.7nm SiO2 layer, a 36.8nm Ta2O5 layer, a 42.8nm SiO2 layer, a 53.7nm Ta2O5 layer, a 22.7nm SiO2 layer, a 214.2nm Ta2O5 layer, a 17.3nm SiO2 layer, a 49.2nm Ta2O5 layer, a 48.7nm SiO2 layer, and a 22.3nm Ta2O5 layer are deposited sequentially. Simultaneously, an RF-assisted deposition method was employed. The SiO2 layer was filled with oxygen gas at a flow rate of 50 sccm, with an Acc. voltage of 1003 V, an Acc. current of 1205 mA, a Suppressor voltage of 503 V, a Bias current of 1995 mA, and an evaporation beam current of 275 mA. The Ta2O5 layer was filled with oxygen gas at a flow rate of 70 sccm, with an Acc. voltage of 1003 V, an Acc. current of 1197 mA, a Suppressor voltage of 502 V, a Bias current of 2000 mA, and an evaporation beam current of 446 mA. Then, a 160.7 nm MgF2 layer was deposited at 354 °C under RF-assisted conditions, resulting in the ultra-wideband antireflective coating applicable to the 480-1970 nm wavelength band described in this application.
[0052] In some embodiments, a Φ17.5mm lens component made of H-QK3 is selected, and a film layer structure is deposited on one surface of the substrate in the wavelength range of 480-1970nm. At 351°C, a 19.7nm Ta2O5 layer, a 76.2nm SiO2 layer, a 24.0nm Ta2O5 layer, a 50.7nm SiO2 layer, a 41.1nm Ta2O5 layer, a 21.3nm SiO2 layer, a 150.1nm Ta2O5 layer, an 18.9nm SiO2 layer, a 42.0nm Ta2O5 layer, a 55.1nm SiO2 layer, and a 20.4nm Ta2O5 layer are deposited sequentially. Simultaneously, an RF-assisted deposition method was employed. The SiO2 layer was filled with oxygen gas at a flow rate of 50 sccm, with an Acc. voltage of 1002 V, an Acc. current of 1201 mA, a Suppressor voltage of 500 V, a Bias current of 2001 mA, and an evaporation beam current of 288 mA. The Ta2O5 layer was filled with oxygen gas at a flow rate of 70 sccm, with an Acc. voltage of 1001 V, an Acc. current of 1200 mA, a Suppressor voltage of 501 V, a Bias current of 2002 mA, and an evaporation beam current of 460 mA. Then, a 159.6 nm MgF2 layer was deposited at 351 °C under RF-assisted conditions, resulting in the ultra-wideband antireflective coating applicable to the 480-1970 nm wavelength band described in this application.
[0053] Note that, unless otherwise explicitly stated, all features disclosed in this specification (including any appended claims, abstract, and drawings) can be replaced by alternative features for achieving the same, equivalent, or similar purpose. Therefore, unless explicitly stated otherwise, each disclosed feature is merely one example of a set of equivalent or similar features. Where used, "further," "preferably," "even further," and "more preferably" are simple starting points for describing another embodiment based on the foregoing embodiments, the combination of which with the foregoing embodiments constitutes the complete configuration of another embodiment. Any combination of several "further," "preferably," "even further," or "more preferably" settings following the same embodiment constitutes yet another embodiment.
[0054] In the implementation of functions and steps, the corresponding functions and steps in the various embodiments may occur in a different order than those shown. For example, two consecutive functions and steps may actually be executed or implemented substantially in parallel, and they may sometimes be executed or implemented in reverse order, depending on the functions involved.
[0055] Although this application has been described in detail above with general descriptions and specific embodiments, some modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, all such modifications or improvements made without departing from the spirit of this application fall within the scope of protection claimed in this application.
Claims
1. A broadband antireflective coating suitable for the 480-1970nm wavelength band, characterized in that, include: A base layer and an air layer are arranged sequentially from bottom to top, and a membrane structure is disposed between the base layer and the air layer; The material of the base layer is any one of H-QK3, H-LaF1, H-LaF52, H-ZF3, H-ZF4 and H-ZF88; The membrane structure is a multilayer membrane, including at least two of the following layers connected from bottom to top: Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, and MgF2 layer.
2. The ultra-wideband antireflective coating applicable to the 480-1970nm wavelength band according to claim 1, characterized in that, When the substrate layer is H-ZF88 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 48.9±2nm, SiO2 layer 39.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 30.1±2nm, Ta2O5 layer 69.9±2nm, SiO2 layer 16.0±2nm, Ta2O5 layer 219.7±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.5±2nm, SiO2 layer 54.7±2nm, Ta2O5 layer 32.7±2nm, and MgF2 layer 160.3±2nm.
3. The ultra-wideband antireflective coating applicable to the 480-1970nm wavelength band according to claim 1, characterized in that, When the substrate layer is H-LaF1 or H-LaF52 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 25.4±2nm, SiO2 layer 48.2±2nm, Ta2O5 layer 42.1±2nm, SiO2 layer 38.2±2nm, Ta2O5 layer 56.7±2nm, SiO2 layer 19.5±2nm, Ta2O5 layer 217.3±2nm, SiO2 layer 17.8±2nm, Ta2O5 layer 49.7±2nm, SiO2 layer 54.9±2nm, Ta2O5 layer 20.5±2nm, and MgF2 layer 161.1±2nm.
4. The ultra-wideband antireflective coating applicable to the 480-1970nm wavelength band according to claim 1, characterized in that, When the substrate layer is H-ZF3 or H-ZF4 material, the thickness of each film layer in the film structure is as follows: Ta2O5 layer 19.9±2nm, SiO2 layer 55.7±2nm, Ta2O5 layer 36.8±2nm, SiO2 layer 42.8±2nm, Ta2O5 layer 53.7±2nm, SiO2 layer 22.7±2nm, Ta2O5 layer 214.2±2nm, SiO2 layer 17.3±2nm, Ta2O5 layer 49.2±2nm, SiO2 layer 48.7±2nm, Ta2O5 layer 22.3±2nm, and MgF2 layer 160.7±2nm.
5. The ultra-wideband antireflective coating applicable to the 480-1970nm wavelength band according to claim 1, characterized in that, When the substrate layer is H-QK3 material, the thickness of each layer of the film structure is as follows: Ta2O5 layer 19.7±2nm, SiO2 layer 76.2±2nm, Ta2O5 layer 24.0±2nm, SiO2 layer 50.7±2nm, Ta2O5 layer 41.1±2nm, SiO2 layer 21.3±2nm, Ta2O5 layer 150.1±2nm, SiO2 layer 18.9±2nm, Ta2O5 layer 42.0±2nm, SiO2 layer 55.1±2nm, Ta2O5 layer 20.4±2nm, and MgF2 layer 159.6±2nm.
6. A method for preparing an ultrawideband antireflective coating applicable to the 480-1970nm wavelength band as described in any one of claims 1-5, characterized in that, include: Step S1: Deposit a film structure on the substrate surface, sequentially depositing Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, Ta2O5 layer, SiO2 layer, and Ta2O5 layer, all using electron beam evaporation. The electron beam evaporation rate of the Ta2O5 layer is controlled at 3-5 Å / s; the electron beam evaporation rate of the SiO2 layer is controlled at 8-12 Å / s. Simultaneously, an RF source is used to assist in the deposition of the aforementioned film structure on the substrate surface. Step S2: Deposit the outermost MgF2 layer of the film structure without using an RF source to assist in deposition. The evaporation rate is controlled at 6-10 Å / s, and no RF source is used to assist in deposition.
7. The preparation method according to claim 6, characterized in that, In step S1, the plating temperature is controlled at 340–360°C.
8. The preparation method according to claim 6, characterized in that, In step S1, the control parameters in the radio frequency source-assisted deposition method are as follows: the SiO2 layer is filled with oxygen gas, the gas flow rate is 50±10 sccm, the Acc. voltage is 1000±10V, the Acc. current is 1200±10 mA, the Suppressor voltage is 500±10V, the Bias current is 2000±10mA, and the evaporation beam current is 280±20 mA.
9. The preparation method according to claim 6, characterized in that, In step S1, the Ta2O5 layer is filled with oxygen gas at a flow rate of 70±10 sccm, the Acc.voltage is 1000±10V, the Acc.current is 1200±10mA, the Suppressor voltage is 500±10V, the Bias current is 2000±10 mA, and the evaporation beam current is 450±20 mA.
10. The preparation method according to claim 6, characterized in that, In step S2, the plating temperature is controlled at 340–360°C.