A novel low-cost, high-isolation multi-channel TRSiP packaging structure

Abstract

The embodiment of the application provides a novel low-cost high-isolation multi-channel TR SiP packaging structure, relates to the field of wireless communication equipment, and the structure comprises: upper layer ceramic medium plates, middle layer ceramic medium plates and lower layer ceramic medium plates which are sequentially stacked; the lower surface of the upper layer ceramic medium plate is provided with a radio frequency control component; the upper surface of the middle layer ceramic medium plate is provided with a first radio frequency generating component; the upper surface of the lower layer ceramic medium plate is provided with a second radio frequency generating component and a third radio frequency generating component; the radio frequency control component is communicated with the third radio frequency generating component through the metal pad and the metal column; the first radio frequency generating component and the second radio frequency generating component are connected with an external control signal. The structure has the advantages of low cost, high isolation, miniaturization, high integration and the like, and has good air tightness, large structural strength and greatly improved reliability.

Description

Technical Field

[0001] This application relates to the field of wireless communication equipment technology, and more specifically, to a novel low-cost, high-isolation multi-channel TR SiP packaging structure. Background Technology

[0002] The core of a phased array radar system is the transceiver module, which performs functions such as radio frequency signal amplification, amplitude and phase modulation, and transmit / receive switching. As systems evolve towards large-scale and highly integrated designs, the packaging technology for multi-channel transceiver modules that combine polarization switching and transmit / receive switching has become a key technology in the industry. System-in-package (SIP) technology can integrate multiple transceiver chips, amplitude and phase control chips, and passive components into a single package. This approach is an effective way to achieve low cost, miniaturization, and high isolation in transceiver modules.

[0003] Traditional multi-channel TR SiP packaging faces two major challenges: inter-channel isolation and cost. High isolation is essential to prevent crosstalk between channels and is a prerequisite for ensuring system performance. Existing technologies typically place multiple channel RF chips on the same substrate, improving inter-channel isolation by fabricating deep cavities on organic substrates or adding metal cavities on ceramic substrates. While this method offers good isolation, it results in larger component sizes and higher costs. Furthermore, the high cost and complex manufacturing processes of HTCC / LTCC materials used in traditional TR SiP packaging structures limit their widespread application. Summary of the Invention

[0004] The embodiments of this application provide a novel low-cost, high-isolation multi-channel TR SiP packaging structure to solve the problem that existing TR modules cannot simultaneously meet the requirements of low cost, high isolation, miniaturization, and hermeticity for multiple channels.

[0005] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0006] According to a first aspect of the embodiments of this application, a novel low-cost, high-isolation multi-channel TR SiP packaging structure is provided, comprising: an upper ceramic dielectric substrate, a middle ceramic dielectric substrate, and a lower ceramic dielectric substrate stacked sequentially;

[0007] The lower surface of the upper ceramic dielectric plate is provided with a radio frequency control component;

[0008] The upper surface of the middle layer ceramic dielectric plate is provided with a first radio frequency generation component;

[0009] The upper surface of the lower ceramic dielectric substrate is provided with a second radio frequency generation component and a third radio frequency generation component;

[0010] Metal pillars are provided between the upper ceramic dielectric plate and the middle ceramic dielectric plate, and between the middle ceramic dielectric plate and the lower ceramic dielectric plate;

[0011] Metal pads are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate;

[0012] The radio frequency control component is connected to the third radio frequency generation component through the metal pads and the metal pillars;

[0013] The first radio frequency generation component and the second radio frequency generation component are connected to an external control signal.

[0014] In some embodiments of this application, based on the foregoing scheme, the upper surface of the upper ceramic dielectric substrate is provided with a first metal pad and a second metal pad;

[0015] A third metal pad is provided on the lower surface of the upper ceramic dielectric substrate, and the radio frequency control component is connected to the third metal pad through metal wires and control signal traces;

[0016] The third metal pad is connected to a first metal post, and the other end of the first metal post is connected to a metal pad on the lower ceramic dielectric substrate.

[0017] In some embodiments of this application, based on the foregoing scheme, the upper surface of the middle layer ceramic dielectric substrate is provided with a fourth metal pad and a fifth metal pad;

[0018] Both the fourth metal pad and the fifth metal pad are connected to the first radio frequency generation component;

[0019] The fourth metal pad is connected to a second metal post, and the other end of the second metal post is connected to the first metal pad.

[0020] In some embodiments of this application, based on the foregoing scheme, the upper surface of the lower ceramic dielectric substrate is provided with a sixth metal pad, a seventh metal pad, and an eighth metal pad;

[0021] The second radio frequency generating component is connected to the sixth metal pad and the third radio frequency generating component respectively. The fifth metal pad is connected to a third metal pillar, and the other end of the third metal pillar is connected to the sixth metal pad.

[0022] The third radio frequency generating component is also connected to the seventh metal pad and the eighth metal pad respectively. The seventh metal pad is connected to a fourth metal pillar, and the other end of the fourth metal pillar is connected to the second metal pad.

[0023] The eighth metal pad is connected to the other end of the first metal pillar.

[0024] In some embodiments of this application, based on the foregoing scheme, a metal frame is provided between the upper ceramic dielectric plate and the middle ceramic dielectric plate, and between the middle ceramic dielectric plate and the lower ceramic dielectric plate;

[0025] The metal frame surrounds the radio frequency control component, the first radio frequency generation component, the second radio frequency generation component, the third radio frequency generation component, the metal pads on each layer of ceramic dielectric substrates, and the metal pillars between each layer of ceramic dielectric substrates.

[0026] In some embodiments of this application, based on the foregoing scheme, radio frequency metal grounds are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate;

[0027] The radio frequency metal ground of the middle ceramic dielectric substrate and the radio frequency metal ground of the lower ceramic dielectric substrate are connected to the metal frame.

[0028] In some embodiments of this application, based on the foregoing scheme, one or more metal vias are provided on the upper ceramic dielectric plate, the middle ceramic dielectric plate, and the lower ceramic dielectric plate;

[0029] When one or more metal vias on a ceramic dielectric substrate serve as connectors between metal pillars and metal pads, the one or more metal vias are not connected to the radio frequency ground plane on the ceramic dielectric substrate.

[0030] In some embodiments of this application, based on the foregoing scheme, the metal frame is made using an electroplating process.

[0031] In some embodiments of this application, based on the foregoing scheme, the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate are made of copper-plated ceramic substrates.

[0032] In some embodiments of this application, based on the foregoing scheme, the upper ceramic dielectric plate and the lower ceramic dielectric plate are connected in a hermetically sealed manner to form a sealed cavity;

[0033] The middle ceramic dielectric plate and the lower ceramic dielectric plate are connected in a sealed manner to form another sealed cavity.

[0034] The technical solution of this application has the following beneficial effects:

[0035] 1. By employing a stacked structure and using a four-channel amplitude-phase multifunctional chip and a switch driver chip, this invention can achieve four-channel RF signal transmission and reception, polarization switching, and high isolation.

[0036] 2. Compared with the existing HTCC / LTCC process, the present invention is based on metal electroplating process, which has lower cost, lower process difficulty, shorter processing cycle and smaller size. It is more suitable for miniaturized application scenarios, improves system integration and reliability, reduces weight and saves size and cost.

[0037] 3. Compared with existing SiP packaging, the present invention uses metal pillars as waveguide transition structures, which can transmit radio frequency signals with low loss in the longitudinal space.

[0038] 4. Compared with existing SiP packaging, the present invention adopts a hermetically sealed waveguide structure, which can achieve hermetically sealed characteristics.

[0039] 5. The novel low-cost, high-isolation, multi-channel TRSiP packaging structure of the present invention uses a ceramic substrate, is non-absorbent, has a stable dielectric constant, high reliability, and stable performance.

[0040] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0041] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0042] Figure 1 A three-dimensional schematic diagram of a novel low-cost, high-isolation multichannel TR SiP packaging structure according to an embodiment of this application is shown.

[0043] Figure 2 A side view of a novel low-cost, high-isolation multichannel TR SiP package structure according to an embodiment of this application is shown;

[0044] Figure 3 A top view of a novel low-cost, high-isolation multichannel TR SiP package structure according to an embodiment of this application is shown;

[0045] Figure 4 This paper shows a schematic diagram of the radio frequency traces and chip distribution on the lower surface of the upper ceramic dielectric substrate according to an embodiment of the present application;

[0046] Figure 5 This paper shows a schematic diagram of the upper surface radio frequency traces and chip distribution on a mid-layer ceramic dielectric substrate according to an embodiment of the present application;

[0047] Figure 6A schematic diagram of the upper surface radio frequency traces and chip distribution on a lower ceramic dielectric substrate according to an embodiment of this application is shown.

[0048] Explanation of reference numerals in the attached figures

[0049] 1-Upper ceramic dielectric substrate, 2-Middle ceramic dielectric substrate, 3-Lower ceramic dielectric substrate, 4-Metal frame, 5-Metal pad, 6-RF component, 7-Metal wire, 8-Metal pillar, 11-First metal via, 21-Second metal via, 31-Third metal via, 12-Signal control trace, 22-First RF ground, 32-Second RF ground, 51-First metal pad, 52-Second metal pad, 53-Third metal pad, 54-Fourth metal pad, 55-Fifth metal pad, 56-Sixth metal pad, 57-Seventh metal pad, 58-Eighth metal pad, 61-RF control component, 62-First RF generation component, 63-Second RF generation component, 64-Third RF generation component, 81-First metal pillar, 82-Second metal pillar, 83-Third metal pillar, 84-Fourth metal pillar. Detailed Implementation

[0050] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0051] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0052] It should be noted that "multiple" as mentioned in this article refers to two or more.

[0053] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such uses of these terms can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described.

[0054] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0055] To address the problems existing in the prior art, this invention proposes a novel low-cost, high-isolation multi-channel TRSiP packaging structure. This structure integrates multiple channel chips into a single package through a stacking process, achieving low cost, miniaturization, high isolation, and high integration while maintaining excellent hermeticity. This type of packaging integrates multiple chips into a small structure, improving reliability while significantly reducing costs.

[0056] Existing TR SiP packaging often integrates RF transceiver chips, phase shift attenuation chips, temperature compensation chips, and PCB control boards, resulting in a large SiP size. In addition, it often uses HTCC / LTCC materials, which require good matching with the shrinkage rate of the metal during sintering. This places high demands on process control, results in a long manufacturing cycle, and requires high-temperature equipment and expensive metal pastes, leading to high manufacturing costs.

[0057] The novel low-cost, high-isolation, multi-channel, miniaturized TR SiP structure proposed in this invention eliminates the need for adding phase-shifting attenuation chips, temperature-compensated chips, and PCB boards to the package. Instead, it directly uses a multi-functional chip with built-in temperature compensation, which saves chip costs and reduces the size of the TRSIP. In addition, the TRSIP structure used in this invention does not require the use of HTCC / LTCC materials. Instead, it adopts a method of electroplating metal on a ceramic substrate. This method simplifies the process and saves costs.

[0058] Specifically, this application provides a novel low-cost, high-isolation multi-channel TR SiP packaging structure, comprising: an upper ceramic dielectric substrate, a middle ceramic dielectric substrate, and a lower ceramic dielectric substrate stacked sequentially;

[0059] The lower surface of the upper ceramic dielectric plate is provided with a radio frequency control component;

[0060] The upper surface of the middle layer ceramic dielectric plate is provided with a first radio frequency generation component;

[0061] The upper surface of the lower ceramic dielectric substrate is provided with a second radio frequency generation component and a third radio frequency generation component;

[0062] Metal pillars are provided between the upper ceramic dielectric plate and the middle ceramic dielectric plate, and between the middle ceramic dielectric plate and the lower ceramic dielectric plate;

[0063] Metal pads are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate;

[0064] The radio frequency control component is connected to the third radio frequency generation component through the metal pads and the metal pillars;

[0065] The first radio frequency generation component and the second radio frequency generation component are connected to an external control signal.

[0066] It should be noted that in this embodiment, the radio frequency generation component is used to generate radio frequency signals, and the radio frequency control component is used to generate control signals.

[0067] The radio frequency generation component can be a radio frequency control chip, and the radio frequency generation component can be a radio frequency chip.

[0068] In this embodiment, the radio frequency control chip and the radio frequency chip are stacked to obtain a low-cost, high-isolation, small-size, multi-channel TRSIP structure.

[0069] For example, see Figure 1 The image shows a three-dimensional schematic diagram of a novel low-cost, high-isolation multichannel TR SiP packaging structure according to an embodiment of this application.

[0070] See Figure 2 The image shows a side view of a novel low-cost, high-isolation, multi-channel TR SiP package structure according to an embodiment of this application.

[0071] like Figure 1 and Figure 2 As shown, the upper ceramic dielectric plate 1, the middle ceramic dielectric plate 2, and the lower ceramic dielectric plate 3 are stacked sequentially from top to bottom. Each ceramic dielectric plate is provided with a metal pad 5. Metal pillars 8 are provided between the upper ceramic dielectric plate 1 and the middle ceramic dielectric plate 2, and between the middle ceramic dielectric plate 2 and the lower ceramic dielectric plate 3.

[0072] like Figure 2 As shown, the radio frequency (RF) component 6 includes an RF control component 61, a first RF generation component 62, a second RF generation component 63, and a third RF generation component 64. The RF control component 61 is disposed on the lower surface of the upper ceramic dielectric substrate 1, the first RF generation component 62 is disposed on the upper surface of the middle ceramic dielectric substrate 2, and the second RF generation component 63 and the third RF generation component 64 are disposed on the upper surface of the lower ceramic dielectric substrate 3.

[0073] The radio frequency control component 61, the first radio frequency generation component 62, the second radio frequency generation component 63 and the third radio frequency generation component 64 are all mounted on their respective ceramic dielectric substrates by means of gold wire bonding. For example, the second radio frequency generation component 63 is mounted on the upper surface of the lower ceramic dielectric substrate 3 by means of metal wire 7.

[0074] In some feasible embodiments, based on the aforementioned scheme, the upper surface of the upper ceramic dielectric substrate is provided with a first metal pad and a second metal pad;

[0075] A third metal pad is provided on the lower surface of the upper ceramic dielectric substrate, and the radio frequency control component is connected to the third metal pad through metal wires and control signal traces;

[0076] The third metal pad is connected to a first metal post, and the other end of the first metal post is connected to a metal pad on the lower ceramic dielectric substrate.

[0077] It should be noted that the first and second metal pads can be used to implant solder balls and interconnect with the external waveguide structure to achieve radio frequency signal transmission.

[0078] For example, see Figure 3 The image shows a top view of a novel low-cost, high-isolation, multi-channel TR SiP packaging structure according to an embodiment of this application.

[0079] For example, see Figure 4 The diagram shows a schematic of the radio frequency traces and chip distribution on the lower surface of the upper ceramic dielectric substrate according to an embodiment of this application.

[0080] like Figure 3 As shown, the first metal pad 51 and the second metal pad 52 are located on the upper surface of the upper ceramic dielectric substrate 1. Figure 4 As shown, the radio frequency control component 61 is disposed on the lower surface of the upper ceramic dielectric substrate 1 via a metal wire 7; the lower surface of the upper ceramic dielectric substrate 1 is also provided with a third metal pad 53 and a signal control trace 12; the third metal pad 53 and the signal control trace 12 are connected to the radio frequency control component 61.

[0081] A first metal post 81 is connected to the third metal pad 53, and the other end of the first metal post 81 is connected to the eighth metal pad 58 on the lower ceramic dielectric substrate.

[0082] In some feasible embodiments, based on the foregoing scheme, the upper surface of the middle layer ceramic dielectric substrate is provided with a fourth metal pad and a fifth metal pad;

[0083] Both the fourth metal pad and the fifth metal pad are connected to the first radio frequency generation component;

[0084] The fourth metal pad is connected to a second metal post, and the other end of the second metal post is connected to the first metal pad.

[0085] For example, see Figure 5 The diagram shows a schematic of the upper surface radio frequency traces and chip distribution on a mid-layer ceramic dielectric substrate according to an embodiment of this application.

[0086] like Figure 5 As shown, the first radio frequency generating component 62 is disposed on the upper surface of the middle layer ceramic dielectric substrate 2. The upper surface of the middle layer ceramic dielectric substrate 2 is also provided with a fourth metal pad 54 and a fifth metal pad 55. The fourth metal pad 54 and the fifth metal pad 55 are connected to the first radio frequency generating component 62. A second metal post 82 is connected to the fourth metal pad 54, and the other end of the second metal post 82 is connected to the first metal pad 51. The first metal pad 51 is a radio frequency interface used for interconnection with signal sources. A third metal post 83 is connected to the fifth metal pad 55, and the other end of the third metal post 83 is connected to the sixth metal pad 56 on the lower layer ceramic dielectric substrate.

[0087] In some feasible embodiments, based on the aforementioned scheme, the upper surface of the lower ceramic dielectric substrate is provided with a sixth metal pad, a seventh metal pad, and an eighth metal pad;

[0088] The second radio frequency generating component is connected to the sixth metal pad and the third radio frequency generating component respectively. The fifth metal pad is connected to a third metal pillar, and the other end of the third metal pillar is connected to the sixth metal pad.

[0089] The third radio frequency generating component is also connected to the seventh metal pad and the eighth metal pad respectively. The seventh metal pad is connected to a fourth metal pillar, and the other end of the fourth metal pillar is connected to the second metal pad.

[0090] The eighth metal pad is connected to the other end of the first metal pillar.

[0091] It should be noted that in this embodiment, the seventh metal pad and the fourth metal pillar are used to carry radio frequency signals and are connected to the outside through the second metal pad; the eighth metal pad and the first metal pillar are used to carry digital signals and are interconnected with the radio frequency control component through the third metal pad. The radio frequency control component only controls the third radio frequency generation component to depolarize.

[0092] For example, see Figure 5 The diagram shows a schematic of the upper surface radio frequency traces and chip distribution on the lower ceramic dielectric substrate according to an embodiment of this application.

[0093] like Figure 6As shown, the second radio frequency generation component 63 and the third radio frequency generation component 64 are disposed on the upper surface of the lower ceramic dielectric substrate 3; the upper surface of the lower ceramic dielectric substrate 3 is also provided with a sixth metal pad 56, a seventh metal pad 57 and an eighth metal pad 58.

[0094] The second RF generating component 63 is connected to the sixth metal pad 56 and the third RF generating component 64, respectively. The third RF generating component 64 is connected to the seventh metal pad 57 and the eighth metal pad 58. One end of the third metal post 83 is connected to the fifth metal pad 55, and the other end is connected to the sixth metal pad 56, realizing signal transmission between the first RF generating component 62 and the second RF generating component 63 and the third RF generating component 64. The seventh metal pad 57 is connected to the fourth metal post 84, and the other end of the fourth metal post 84 is connected to the second metal pad 52. The eighth metal pad 58 is connected to the first metal post 81, and the other end of the first metal post 81 is connected to the third metal pad 53, realizing signal transmission between the second RF generating component 63, the third RF generating component 64 and the RF control component 61.

[0095] In some feasible embodiments, based on the aforementioned scheme, a metal frame is provided between the upper ceramic dielectric plate and the middle ceramic dielectric plate, and between the middle ceramic dielectric plate and the lower ceramic dielectric plate;

[0096] The metal frame surrounds the radio frequency control component, the first radio frequency generation component, the second radio frequency generation component, the third radio frequency generation component, the metal pads on each layer of ceramic dielectric substrates, and the metal pillars between each layer of ceramic dielectric substrates.

[0097] For example, such as Figure 1 , Figure 2 As shown, the metal frame 4 is disposed between the upper ceramic medium plate 1 and the middle ceramic medium plate 2, and between the middle ceramic medium plate 2 and the lower ceramic medium plate 3.

[0098] In some feasible embodiments, based on the foregoing scheme, radio frequency metal grounds are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate;

[0099] The radio frequency metal ground of the middle ceramic dielectric substrate and the radio frequency metal ground of the lower ceramic dielectric substrate are connected to the metal frame.

[0100] In some feasible embodiments, based on the foregoing scheme, one or more metal vias are provided on the upper ceramic dielectric plate, the middle ceramic dielectric plate, and the lower ceramic dielectric plate;

[0101] When one or more metal vias on a ceramic dielectric substrate serve as connectors between metal pillars and metal pads, the one or more metal vias are not connected to the radio frequency ground plane on the ceramic dielectric substrate.

[0102] For example, taking the upper ceramic dielectric substrate as an example, the second metal pillar 82 is connected to the first metal pad 51 through one or more metal vias on the upper ceramic dielectric substrate 1. When the one or more metal vias serve as the connector between the second metal pillar 82 and the first metal pad 51, the one or more metal vias are not connected to the radio frequency metal ground of the upper ceramic dielectric substrate.

[0103] It is understandable that the metal vias that connect the second metal pillar 82 and the first metal pad 51 are not connected to the RF metal ground of the upper ceramic dielectric substrate in order to avoid short circuits in the RF signal transmission lines.

[0104] It should be noted that in other embodiments, the connector between the metal pillar and the metal pad may not be a metal via on the upper ceramic dielectric substrate, but may be a newly drilled connection hole on the upper ceramic dielectric substrate. In this embodiment, in order to save costs, a metal via on the upper ceramic dielectric substrate is used as the connector.

[0105] In some feasible embodiments, based on the foregoing scheme, the metal frame is made using an electroplating process.

[0106] It should be noted that the metal frame surrounding the RF component 6 prevents internal radiation leakage and provides good electromagnetic shielding. Electroplating a first RF metal ground 22 and a second RF metal ground 32 above the middle ceramic dielectric substrate and above the lower ceramic dielectric substrate provides good grounding for the component.

[0107] In some feasible embodiments, based on the foregoing scheme, the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate are made of copper-plated ceramic substrates.

[0108] It should be noted that each ceramic dielectric substrate has metal vias to form a stable transmission line structure and provide grounding for the components.

[0109] For example, such as Figure 1 As shown, the upper ceramic dielectric plate 1 is provided with a first metal via 11; the middle ceramic dielectric plate 2 is provided with a second metal via 21; and the lower ceramic dielectric plate 3 is provided with a third metal via 31.

[0110] In some feasible embodiments, based on the aforementioned scheme, the upper ceramic dielectric plate and the lower ceramic dielectric plate are connected in a sealed manner to form a sealed cavity;

[0111] The middle ceramic dielectric plate and the lower ceramic dielectric plate are connected in a sealed manner to form another sealed cavity.

[0112] It is understandable that the radio frequency control component 61, the first radio frequency generation component 62, the second radio frequency generation component 63, and the third radio frequency generation component 64 are all located in these two sealed cavities, thus achieving the airtight performance of the structure.

[0113] Other embodiments of this application will readily conceive of by those skilled in the art upon consideration of the specification and practice of the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. It should be understood that this application is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A novel low-cost, high-isolation multi-channel TR SiP packaging structure, characterized in that, include: The upper ceramic dielectric plate, the middle ceramic dielectric plate, and the lower ceramic dielectric plate are stacked in sequence. The lower surface of the upper ceramic dielectric plate is provided with a radio frequency control component; The upper surface of the middle layer ceramic dielectric plate is provided with a first radio frequency generation component; The upper surface of the lower ceramic dielectric substrate is provided with a second radio frequency generation component and a third radio frequency generation component; Metal pillars are provided between the upper ceramic dielectric plate and the middle ceramic dielectric plate, and between the middle ceramic dielectric plate and the lower ceramic dielectric plate; Metal pads are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate; The radio frequency control component is connected to the third radio frequency generation component through the metal pads and the metal pillars; The first radio frequency generation component and the second radio frequency generation component are connected to an external control signal; The upper surface of the upper ceramic dielectric plate is provided with a first metal pad and a second metal pad; A third metal pad is provided on the lower surface of the upper ceramic dielectric substrate, and the radio frequency control component is connected to the third metal pad through metal wires and control signal traces; The third metal pad is connected to a first metal pillar, and the other end of the first metal pillar is connected to a metal pad on the lower ceramic dielectric substrate. The upper surface of the middle layer ceramic dielectric substrate is provided with a fourth metal pad and a fifth metal pad; Both the fourth metal pad and the fifth metal pad are connected to the first radio frequency generation component; The fourth metal pad is connected to a second metal post, and the other end of the second metal post is connected to the first metal pad. The upper surface of the lower ceramic dielectric substrate is provided with a sixth metal pad, a seventh metal pad, and an eighth metal pad. The second radio frequency generating component is connected to the sixth metal pad and the third radio frequency generating component respectively. The fifth metal pad is connected to a third metal pillar, and the other end of the third metal pillar is connected to the sixth metal pad. The third radio frequency generating component is also connected to the seventh metal pad and the eighth metal pad respectively. The seventh metal pad is connected to a fourth metal pillar, and the other end of the fourth metal pillar is connected to the second metal pad. The eighth metal pad is connected to the other end of the first metal pillar; The seventh metal pad and the fourth metal pillar are used to carry radio frequency signals and are connected to the outside through the second metal pad; the eighth metal pad and the first metal pillar are used to carry digital signals and are interconnected with the radio frequency control component through the third metal pad. The radio frequency control component only controls the third radio frequency generation component to depolarize.

2. The structure according to claim 1, characterized in that, Metal frames are provided between the upper ceramic medium plate and the middle ceramic medium plate, and between the middle ceramic medium plate and the lower ceramic medium plate; The metal frame surrounds the radio frequency control component, the first radio frequency generation component, the second radio frequency generation component, the third radio frequency generation component, the metal pads on each layer of ceramic dielectric substrates, and the metal pillars between each layer of ceramic dielectric substrates.

3. The structure according to claim 2, characterized in that, Radio frequency metal grounds are provided on the upper ceramic dielectric substrate, the middle ceramic dielectric substrate, and the lower ceramic dielectric substrate; The radio frequency metal ground of the middle ceramic dielectric substrate and the radio frequency metal ground of the lower ceramic dielectric substrate are connected to the metal frame.

4. The structure according to claim 3, characterized in that, One or more metal vias are provided on the upper ceramic dielectric plate, the middle ceramic dielectric plate and the lower ceramic dielectric plate; When one or more metal vias on a ceramic dielectric substrate serve as connectors between metal pillars and metal pads, the one or more metal vias are not connected to the radio frequency ground plane on the ceramic dielectric substrate.

5. The structure according to claim 2, characterized in that, The metal frame is made using an electroplating process.

6. The structure according to any one of claims 1-5, characterized in that, The upper ceramic dielectric plate, the middle ceramic dielectric plate, and the lower ceramic dielectric plate are made of copper-plated ceramic substrates.

7. The structure according to any one of claims 1-5, characterized in that, The upper ceramic dielectric plate and the lower ceramic dielectric plate are connected in a sealed manner to form a sealed cavity; The middle ceramic dielectric plate and the lower ceramic dielectric plate are connected in a sealed manner to form another sealed cavity.

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