Ultraviolet light generating device and semiconductor processing apparatus

By adopting a solid-state microwave source and a split-design ultraviolet light generation device, the problem of short lifespan of existing devices has been solved, achieving efficient and stable ultraviolet light output and improving wafer processing efficiency and yield.

CN121964478BActive Publication Date: 2026-06-09TIANJIN JIZHAOYUAN TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TIANJIN JIZHAOYUAN TECH CO LTD
Filing Date
2026-03-31
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing ultraviolet light generating devices have a short lifespan and require frequent replacement or maintenance, which affects wafer processing efficiency and yield.

Method used

The system employs a solid-state microwave source and a separately designed power amplification and synthesis submodule and drive control submodule. By detecting reflected power and incident power, it dynamically adjusts the output frequency and power to achieve impedance matching, improve microwave energy utilization, and generate ultraviolet light through an electrodeless ultraviolet lamp.

Benefits of technology

It extends the service life of the ultraviolet light generating device, improves wafer processing efficiency and yield, ensures the stability and controllability of ultraviolet light output, and reduces maintenance costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a kind of ultraviolet light generating device and semiconductor processing equipment.The ultraviolet light generating device includes at least one solid-state microwave source, wherein the solid-state microwave source includes power amplification synthesis submodule, detection submodule, drive control submodule and coaxial cable;The detection submodule is used to detect the reflected power and incident power of the solid-state microwave source it is located in;The drive control submodule is used to adjust at least one of the output frequency and output power of the solid-state microwave source it is located in according to the reflected power and incident power;At least one microwave waveguide, the microwave waveguide is used to transmit the microwave energy output by power amplification synthesis submodule;Under the action of microwave energy, the electrodeless ultraviolet lamp tube generates ultraviolet light.The application basically does not need to replace solid-state microwave source, can further guarantee the processing efficiency and production yield in wafer processing process, can also guarantee the stability and controllability of output ultraviolet light intensity, and can improve the utilization rate of microwave energy.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an ultraviolet light generating device and semiconductor processing equipment. Background Technology

[0002] In the wafer fabrication process, ultraviolet light generating devices are indispensable equipment in the production process. The ultraviolet light output by the ultraviolet light generating device is used to irradiate the photoresist on the wafer surface to achieve curing, which can prevent the photoresist from collapsing during etching.

[0003] Current ultraviolet light generating devices mainly generate ultraviolet light through electrodeless ultraviolet lamps. Electrodeless ultraviolet lamps are a type of electrodeless, microwave-driven ultraviolet light source, which is very suitable for photoresist curing and exposure, especially in scenarios with thick resist, large area and high uniformity.

[0004] However, existing ultraviolet light generating devices have a short lifespan and need to be replaced or repaired periodically, which seriously affects the efficiency of wafer processing and the yield of wafers. Summary of the Invention

[0005] This invention provides an ultraviolet light generating device and semiconductor processing equipment that basically eliminates the need to replace the solid-state microwave source, thereby further ensuring processing efficiency and yield during wafer processing, as well as ensuring the stability and controllability of the output ultraviolet light intensity and improving the utilization rate of microwave energy.

[0006] According to one aspect of the present invention, an ultraviolet light generating device is provided, the ultraviolet light generating device comprising:

[0007] At least one solid-state microwave source, wherein the solid-state microwave source includes a power amplification and combining submodule, a detection submodule, a drive control submodule, and a coaxial cable; the drive control submodule is spaced apart from the power amplification and combining submodule by a predetermined distance, and the two are electrically connected via a coaxial cable of a predetermined length; the predetermined length is configured such that when the power amplification and combining submodule moves relative to the drive control submodule, the drive control submodule remains in a fixed position; the detection submodule is used to detect the reflected power and incident power of the solid-state microwave source to which it is located; the drive control submodule is also electrically connected to the detection submodule and is used to adjust at least one of the output frequency and output power of the solid-state microwave source to which it is located based on the reflected power and the incident power;

[0008] At least one microwave waveguide, the number of which is equal to the number of the solid-state microwave sources, and the microwave waveguides correspond one-to-one with the solid-state microwave sources; the microwave waveguides are located on one side of the power amplification and combining submodule in the corresponding solid-state microwave source, and are coaxially connected to the power amplification and combining submodules in a waveguide manner, for transmitting the microwave energy output by the power amplification and combining submodules;

[0009] An electrodeless ultraviolet lamp is located on the side of the microwave waveguide away from the power amplification and synthesis submodule. The electrodeless ultraviolet lamp generates ultraviolet light under the action of microwave energy.

[0010] Optionally, the ultraviolet light generating device provided in this embodiment includes a control module, two solid-state microwave sources, and two spaced microwave waveguides;

[0011] The two power amplification and combining submodules in the two solid-state microwave sources are spaced apart.

[0012] Each of the aforementioned detection submodules is located in the gap between the two microwave waveguides;

[0013] The control module is electrically connected to the drive control submodule in each of the solid-state microwave sources. The control module is used to control the working state of each of the drive control submodules to control the two solid-state microwave sources to work alternately or simultaneously.

[0014] Optionally, the drive control submodule is further configured to store the target light intensity and light intensity mapping table of the electrodeless ultraviolet lamp, and to adjust at least one of the output frequency and output power of the solid-state microwave source according to the reflected power, the incident power, the light intensity mapping table and the target light intensity, wherein the light intensity mapping table characterizes the correspondence between the ratio of actual reflected power to actual incident power and the preset actual light intensity.

[0015] Optionally, the power amplification and combining submodule includes a power dividing unit, a liquid cooling plate, multiple power amplification units, and two power combining units;

[0016] The input terminal of the power divider unit is electrically connected to the drive control submodule, and the multiple output terminals of the power divider unit are each electrically connected to one of the power amplifier units.

[0017] At least two of the power amplification units are located on the first surface side of the liquid cooling plate and are in contact with the first surface of the liquid cooling plate. The remaining power amplification units are located on the second surface side of the liquid cooling plate and are in contact with the second surface of the liquid cooling plate. One power combining unit is provided on both the first surface side and the second surface side of the liquid cooling plate.

[0018] The power amplification unit located on the first surface side of the liquid cooling plate is electrically connected to the power combining unit located on the first surface side, and the power amplification unit located on the second surface side of the liquid cooling plate is electrically connected to the power combining unit located on the second surface side. The two power combining units are coaxially connected to the corresponding microwave waveguides. The first surface and the second surface are arranged opposite to each other, and the area of ​​the first surface and the area of ​​the second surface are both larger than the area of ​​other surfaces in the liquid cooling plate.

[0019] Optionally, the drive control submodule includes a microwave drive unit, a control unit, and a DC power supply unit;

[0020] The control unit is electrically connected to the microwave driving unit and the DC power supply unit. The control unit is used to control the output frequency of the microwave driving unit and the output power of each of the power amplification units according to the incident power and the reflected power.

[0021] The microwave drive unit is electrically connected to the input terminal of the power divider unit, and the DC power supply unit is electrically connected to each of the power amplifier units.

[0022] Optionally, the ultraviolet light generating device provided in this embodiment also includes a reflector;

[0023] The reflector surrounds at least a portion of the electrodeless ultraviolet lamp and is used to reflect the ultraviolet light generated by the electrodeless ultraviolet lamp so that the reflected ultraviolet light reaches the part to be irradiated.

[0024] Optionally, the ultraviolet light generating device provided in this embodiment also includes an air-cooling structure;

[0025] The air-cooled structure is located on the side of the power amplification and combining submodule away from the microwave waveguide;

[0026] The gap between the two power amplification and combining submodules is connected to the gap between the two microwave waveguides;

[0027] The air generated by the air-cooling structure is transmitted to the electrodeless ultraviolet lamp through the gap between two adjacent power amplification and synthesis submodules and the gap between two adjacent microwave waveguides.

[0028] Optionally, the ultraviolet light generating device provided in this embodiment further includes a first housing and a second housing;

[0029] The first housing is used to cover the electrodeless ultraviolet lamp, the two power amplification and combining sub-modules, the two detection sub-modules, and the two spaced microwave waveguides;

[0030] The second housing is used to enclose the control module and the two drive control sub-modules;

[0031] The first housing and the second housing are spaced apart by the predetermined distance.

[0032] Optionally, each of the power amplification and combining submodules includes at least four of the power amplification units;

[0033] The output power of each of the power amplifier units ranges from 300W to 600W.

[0034] According to another aspect of the present invention, a semiconductor processing apparatus is provided, which includes an ultraviolet light generating device provided in any embodiment of the present invention.

[0035] This invention provides an ultraviolet light generating device that uses a solid-state microwave source to provide microwave energy. This eliminates the need for frequent microwave source replacements during use, extending the device's lifespan and improving wafer fabrication efficiency. The invention employs a separate design for the power amplification and combining submodule and the drive control submodule, reducing the size of the movable illumination structure while protecting the precision control circuitry within the drive control submodule. Furthermore, using a solid-state microwave source allows for dynamic adjustment of output power and frequency based on detected incident and reflected power, achieving dynamic impedance matching, improving microwave energy utilization, and ensuring the stability and controllability of the ultraviolet light output. In summary, the ultraviolet light generating device provided by this invention requires minimal replacement of the solid-state microwave source, further ensuring processing efficiency and yield during wafer fabrication, guaranteeing the stability and controllability of the output ultraviolet light intensity, and improving microwave energy utilization.

[0036] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram of the structure of an ultraviolet light generating device according to an embodiment of the present invention;

[0039] Figure 2 This is a schematic diagram of the structure of another ultraviolet light generating device provided according to an embodiment of the present invention;

[0040] Figure 3 This is a schematic diagram of a power amplification and combining submodule connected to a microwave waveguide according to an embodiment of the present invention;

[0041] Figure 4 This is a schematic diagram of the structure of another ultraviolet light generating device provided according to an embodiment of the present invention;

[0042] Figure 5 This is a schematic diagram of the structure of another ultraviolet light generating device provided according to an embodiment of the present invention;

[0043] Figure 6 This is a schematic diagram of the structure of another ultraviolet light generating device provided according to an embodiment of the present invention;

[0044] Figure 7 This is a schematic diagram of the structure of another ultraviolet light generating device provided according to an embodiment of the present invention. Detailed Implementation

[0045] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0046] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0047] Figure 1 This is a schematic diagram of an ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 1The ultraviolet light generating device provided in this embodiment includes at least one solid-state microwave source 110, at least one microwave waveguide 120, and an electrodeless ultraviolet lamp 130. The solid-state microwave source 110 includes a power amplification and combining submodule 111, a detection submodule 112, a drive control submodule 113, and a coaxial cable 114. The drive control submodule 113 is spaced apart from the power amplification and combining submodule 111 by a predetermined distance, and the two are electrically connected by a coaxial cable 114 of a predetermined length. The predetermined length is configured such that when the power amplification and combining submodule 111 moves relative to the drive control submodule 113, the drive control submodule 113 remains in a fixed position. The detection submodule 112 is used to detect the reflected power and incident power of the solid-state microwave source 110 to which it is located. The drive control submodule 111... 3 is also electrically connected to the detection submodule 112, and is used to adjust at least one of the output frequency and output power of the solid-state microwave source 110 it is located in according to the reflected power and the incident power; the number of microwave waveguides 120 is equal to the number of solid-state microwave sources 110, and the microwave waveguides 120 correspond one-to-one with the solid-state microwave sources 110; the microwave waveguide 120 is located on one side of the power amplification and synthesis submodule 111 in the corresponding solid-state microwave source 110, and is coaxially connected to the power amplification and synthesis submodule 111 in a waveguide manner, and is used to transmit the microwave energy output by the power amplification and synthesis submodule 111; the electrodeless ultraviolet lamp 130 is located on the side of the microwave waveguide 120 away from the power amplification and synthesis submodule 111, and the electrodeless ultraviolet lamp 130 generates ultraviolet light under the action of microwave energy.

[0048] Specifically, the ultraviolet light generating device provided in this embodiment can be used for the curing and exposure of photoresist during wafer fabrication. The number of solid-state microwave sources 110 can be one, two, three, or four, etc. When the number of solid-state microwave sources 110 is greater than one, the output frequencies of each solid-state microwave source 110 can be equal or unequal. The output power of each solid-state microwave source 110 can be equal or unequal.

[0049] The microwave waveguide 120 is located between the power amplification and combining submodule 111 and the stepless ultraviolet lamp 130. The power amplification and combining submodule 111 also includes a coaxial interface 101, which is connected to the microwave waveguide 120 in a coaxial-to-waveguide manner.

[0050] The drive control submodule 113 outputs primary power microwave energy and transmits it to the power amplification and combining submodule 111 via coaxial cable 114. The power amplification and combining submodule 111 divides the received primary power microwave energy into multiple microwave paths, amplifies the power of each path, and then combines the amplified microwaves to output high-power microwave energy to microwave waveguide 120, which then transmits it to electrodeless ultraviolet lamp 130. Electrodeless ultraviolet lamp 130 uses microwave energy to excite substances (such as mercury, metal halides, etc.) inside the lamp to form plasma, thereby radiating ultraviolet light. In this embodiment, the electrodeless ultraviolet lamp 130 has no electrodes, which can improve its service life, thereby improving the service life of the ultraviolet light generating device.

[0051] In this embodiment, the power amplification and synthesis submodule 111, detection submodule 112, microwave waveguide 120, and electrodeless ultraviolet lamp 130 can be integrated into one unit, forming the illumination structure in the ultraviolet light generating device. During the operation of the ultraviolet light generating device, the illumination structure can rotate or move forward, backward, left, or right, thereby achieving the effect of receiving ultraviolet light on the photoresist on a large area of ​​the wafer, and ensuring that the photoresist in each area of ​​the wafer receives ultraviolet light, thus ensuring the uniformity of photoresist curing.

[0052] In this embodiment, the power amplification and combining submodule 111 and the drive control submodule 113 are set separately. This ensures that the position of the drive control submodule 113 remains unchanged during the movement of the power amplification and combining submodule 111, thus avoiding damage caused by frequent movement of the drive control submodule 113. Furthermore, the volume of the power amplification and combining submodule 111 in this embodiment is approximately the same as that of the magnetron in current ultraviolet light generating devices. Therefore, the magnetron can be replaced by the power amplification and combining submodule 111. Thus, by placing the power amplification and combining submodule 111 and the drive control submodule 113 in the solid-state microwave source 110 at a set distance, rather than integrating them, this embodiment allows the illumination structure in the ultraviolet light generating device to directly replace the existing ultraviolet light generating device using a magnetron in semiconductor processing equipment. Moreover, during replacement, there is no need to modify the semiconductor processing equipment, significantly improving the ease of upgrading current semiconductor processing equipment.

[0053] The coaxial cable 114 can be a flexible coaxial cable, and its length can be set according to actual needs, as long as it ensures that the power amplification and synthesis submodule 111 does not move with the drive control submodule 113 when it moves relative to the drive control submodule 113. For example, the set distance can be 1 meter, 2 meters, 3 meters, or 4 meters, etc.

[0054] The detection submodule 112 may include a directional coupler. The detection submodule 112 is located on the side of the microwave waveguide 120, and its detection probe can penetrate deep into the microwave waveguide 120. The detection submodule 112 sends the detected incident power and reflected power to the drive control submodule 113. The drive control submodule 113 adjusts the output frequency and output power of the solid-state microwave source 110, or both, based on the reflected power and incident power, thereby reducing the reflected power and matching the impedance of the solid-state microwave source 110 with the impedance within the electrodeless ultraviolet lamp 130. This improves the utilization rate of microwave energy and eliminates the need for an impedance matching device, reducing the manufacturing cost of the ultraviolet light generating device. Compared to current ultraviolet light generating devices that use magnetrons to generate microwaves, the output frequency of the solid-state microwave source 110 in this embodiment is adjustable, ensuring the uniformity of ultraviolet light generated by the electrodeless ultraviolet lamp 130, thereby improving wafer yield. In this embodiment, the solid-state microwave source 110 may not require a circulator and a water load, thereby further reducing the size of the solid-state microwave source 110.

[0055] This embodiment provides an ultraviolet light generating device that uses a solid-state microwave source to provide microwave energy. This eliminates the need for frequent microwave source replacements during use, extending the device's lifespan and improving wafer fabrication efficiency. The embodiment employs a separate design for the power amplification and combining submodule and the drive control submodule, reducing the size of the movable illumination structure while protecting the precision control circuitry within the drive control submodule. Furthermore, using a solid-state microwave source allows for dynamic adjustment of output power and frequency based on detected incident and reflected power, achieving dynamic impedance matching, improving microwave energy utilization, and ensuring the stability and controllability of the ultraviolet light output. In summary, the ultraviolet light generating device provided in this embodiment requires minimal replacement of the solid-state microwave source, further ensuring processing efficiency and yield during wafer fabrication, guaranteeing the stability and controllability of the output ultraviolet light intensity, and improving microwave energy utilization.

[0056] Optional, Figure 2 This is a schematic diagram of another ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 2 The ultraviolet light generating device provided in this embodiment includes a control module 140, two solid-state microwave sources, and two spaced microwave waveguides 120; two power amplification and combining sub-modules 111 in the two solid-state microwave sources are spaced apart; each detection sub-module 112 is located in the gap between the two microwave waveguides 120; the control module 140 is electrically connected to the drive control sub-modules 113 in each solid-state microwave source, and the control module 140 is used to control the two solid-state microwave sources to work alternately or simultaneously by controlling the working state of each drive control sub-module 113.

[0057] Specifically, this embodiment sets up two solid-state microwave sources, which can ensure that multiple areas of the electrodeless ultraviolet lamp 130 receive microwave energy, thereby ensuring that the electrodeless ultraviolet lamp 130 can output ultraviolet light with a large intensity, and thus ensuring that the photoresist on the wafer obtains ultraviolet light with sufficient intensity, ensuring the photoresist processing effect and efficiency.

[0058] Two detection submodules 112 are positioned in the gap between the two microwave waveguides 120. This makes reasonable use of the redundant space inside the ultraviolet light generating device, improves the compactness of the ultraviolet light generating device design, and ensures the volume of the illumination structure (which includes the electrodeless ultraviolet lamp 130, two detection submodules 112, two power amplification and synthesis submodules 111, and two microwave waveguides 120) in the ultraviolet light generating device.

[0059] Setting up two power amplification and combining submodules 111 spaced apart can reduce interference between them.

[0060] The control module 140 controls the output of microwave energy from one of the two solid-state microwave sources or the output of microwave energy from both solid-state microwave sources simultaneously by controlling the working state of the two drive control sub-modules 113. This allows the ultraviolet light generating device to have multiple working modes, enabling users to select the required solid-state microwave source to output microwave energy according to their actual needs.

[0061] It should be noted that both microwave waveguides 120 are located at both ends of the electrodeless ultraviolet lamp tube 130.

[0062] Optionally, the drive control submodule is also used to store the target light intensity of the electrodeless ultraviolet lamp and the light intensity mapping table, and to adjust at least one of the output frequency and output power of the solid-state microwave source according to the reflected power, incident power, light intensity mapping table and target light intensity, wherein the light intensity mapping table characterizes the correspondence between the ratio of actual reflected power to actual incident power and the preset actual light intensity.

[0063] Specifically, the ratio of actual reflected power to actual incident power in the light intensity mapping table corresponds to a preset actual light intensity. The preset actual light intensity can be the actual light intensity measured by a light intensity meter before the ultraviolet light generating device leaves the factory.

[0064] The target light intensity is the light intensity required in the wafer manufacturing process. However, the actual light intensity output by the electrodeless ultraviolet lamp is sometimes not equal to the target light intensity. Existing technologies typically use a light intensity meter to detect the ultraviolet light intensity, but these meters have short lifespans and require space for their installation. In this embodiment, the drive control submodule determines the ratio between the reflected power and incident power transmitted by the detection submodule. Based on this ratio, it finds the corresponding preset actual light intensity in the light intensity mapping table, considers the preset actual light intensity as the actual light intensity of the electrodeless ultraviolet lamp, and dynamically adjusts the output frequency and / or output power of the solid-state microwave source according to the difference between the preset actual light intensity and the target light intensity, so that the actual light intensity of the ultraviolet light output by the electrodeless ultraviolet lamp is close to or equal to the target light intensity. Therefore, the ultraviolet light generating device provided in this embodiment eliminates the need for a light intensity meter to detect the actual light intensity, reducing the manufacturing cost and size of the ultraviolet light generating device.

[0065] Optional, Figure 3 This is a schematic diagram of a power amplification and combining submodule connected to a microwave waveguide according to an embodiment of the present invention. (Refer to...) Figure 3 In the same solid-state microwave source, the power amplification and combining submodule 111 provided in this embodiment includes a power divider unit 102, a liquid cooling plate 104, multiple power amplification units 105, and two power combining units 103. The input terminal of the power divider unit 102 is electrically connected to the drive control submodule, and the multiple output terminals of the power divider unit 102 are respectively electrically connected to one power amplification unit 105. At least two power amplification units 105 are located on the first surface side of the liquid cooling plate 104 and are in contact with the first surface of the liquid cooling plate 104. The remaining power amplification units 105 are located on the second surface side of the liquid cooling plate 104 and are in contact with the second surface of the liquid cooling plate 104. The liquid cooling plate 104 has a power combining unit 103 on both the first and second surface sides. The power amplification unit 105 on the first surface side of the liquid cooling plate 104 is electrically connected to the power combining unit 103 on the first surface side, and the power amplification unit 105 on the second surface side of the liquid cooling plate 104 is electrically connected to the power combining unit 103 on the second surface side. The two power combining units 103 are coaxially connected to the corresponding microwave waveguides 120. The first and second surfaces are arranged opposite to each other, and the areas of the first and second surfaces are both larger than the areas of other surfaces in the liquid cooling plate 104.

[0066] Specifically, the power divider unit 102 divides the microwave energy from the primary power output of the drive control submodule 113 into multiple microwave paths, which are then sent to each power amplification unit 105. Each power amplification unit 105 amplifies the power of the received microwave. The power combining unit 103 combines the amplified microwaves output from each power amplification unit 105 located on the same surface as the liquid cooling plate 104, and outputs high-power microwave energy to the microwave waveguide 120. The two power combining units 103 are connected to the microwave waveguide 120, respectively, to achieve two-way combining within the microwave waveguide 120, and the final microwave energy is transmitted to the electrodeless ultraviolet lamp 130.

[0067] When the same solid-state microwave source includes 6 power amplification units 105, 3 power amplification units 105 can be set on both the first and second surface sides of the liquid cooling plate 104, and the power combining unit 103 can be a 3-channel power combining unit. For example, refer to [reference needed]. Figure 3 The three paths in the three-way power combining unit are the first combining path 1031, the second combining path 1032, and the third combining path 1033.

[0068] To ensure the power amplification and combining submodule 111 operates at high efficiency for extended periods, this embodiment also includes a liquid cooling plate 104 for cooling. The liquid cooling plate 104 is made of a metal material, exemplarily aluminum. It has an inlet and an outlet for liquid cooling, and internal liquid cooling channels, which can have a serpentine structure. These channels can be circulated with a cooling medium, such as water. In this embodiment, the power amplification and combining submodule 111 utilizes water cooling; that is, the solid-state microwave source in this embodiment employs water cooling. Water cooling offers superior cooling performance, occupies a small volume, requires no ventilation cooling, and generates low noise.

[0069] The remaining power amplification units 105 refer to the power amplification units other than those located on the first surface side among multiple power amplification units in the same solid-state microwave source. Power amplification units 105 are provided on both the first and second surface sides of the liquid cooling plate 104, and the areas of the first and second surfaces can be equal. The liquid cooling plate 104 can be a cuboid, and the first and second surfaces can be the long and wide sides of the liquid cooling plate 104. The number of power amplification units 105 on the first surface side can be equal to the number of power amplification units 105 on the second surface side. In this embodiment, each power amplification unit 105 and power combining unit 103 are in contact with the liquid cooling plate 104, ensuring the heat dissipation effect of each power amplification unit 105 and power combining unit 103. The long and wide sides of each power amplification unit 105 can contact the long and wide sides of the liquid cooling plate 104, thus improving the cooling effect.

[0070] It should also be noted that the liquid cooling plate 104 may include two separable liquid cooling sub-plates, and the microwave waveguide 120 may be located between the two liquid cooling sub-plates.

[0071] Optional, Figure 4 This is a schematic diagram of another ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 4 The drive control submodule 113 includes a microwave drive unit 1131, a control unit 1132, and a DC power supply unit 1133. The control unit 1132 is electrically connected to the microwave drive unit 1131 and the DC power supply unit 1133. The control unit 1132 is used to control the output frequency of the microwave drive unit 1131 and the output power of each power amplifier unit according to the incident power and the reflected power. The microwave drive unit 1131 is electrically connected to the input terminal of the power divider unit, and the DC power supply unit 1133 is electrically connected to each power amplifier unit.

[0072] Specifically, the center frequency of the microwave output by the microwave drive unit 1131 can be 915MHz or 2450MHz. The control unit 1132 is electrically connected to the detection submodule 112. The control unit 1132 can adjust the output frequency of the microwave drive unit 1131 according to the incident power and reflected power, so that the output frequency deviates from the center frequency to reduce the reflected power. Impedance matching is achieved by dynamically adjusting the output frequency, thereby improving the utilization rate of microwave energy. The control unit 1132 can also control the output power of each power amplifier unit, thereby controlling the output power of the solid-state microwave source, and thus controlling the intensity of the ultraviolet light output by the electrodeless ultraviolet lamp 130.

[0073] The control module 140 is electrically connected to each control unit 1132. The control module 140 controls each solid-state microwave source to work individually or simultaneously by controlling the working status of each control unit 1132.

[0074] The DC power supply unit 1133 outputs DC voltage, which can supply power to each power amplifier unit. The control unit 1132 can control the magnitude of the power supply voltage supplied by the DC power supply unit 1133 to each power amplifier unit. The control unit 1132 controls the output power of the power amplifier unit by controlling the magnitude of the power supply voltage.

[0075] Optional, Figure 5 This is a schematic diagram of another ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 5 The ultraviolet light generating device provided in this embodiment also includes a reflector 131; the reflector 131 surrounds at least a portion of the electrodeless ultraviolet lamp 130 and is used to reflect the ultraviolet light generated by the electrodeless ultraviolet lamp 130 so that the reflected ultraviolet light is directed to the component to be irradiated.

[0076] Specifically, the reflector 131 can be located between two adjacent microwave waveguides 120, or it can be located between the microwave waveguide 120 and the electrodeless ultraviolet lamp 130.

[0077] The reflector 131 can be made of metal or glass, with a reflective layer coated on the glass. The reflector 131 has almost no impact on the transmission of microwave energy to the electrodeless ultraviolet lamp 130. The reflector 131 improves ultraviolet light utilization and prevents ultraviolet light from irradiating the microwave waveguide 120 or the power amplification and combining submodule 111. The component to be irradiated is a device that receives ultraviolet light; exemplaryly, the component to be irradiated can be a wafer coated with photoresist.

[0078] Optional, Figure 6 This is a schematic diagram of another ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 6 The ultraviolet light generating device provided in this embodiment also includes a wind-cooling structure 150; the wind-cooling structure 150 is located on the side of the power amplification and combining submodule 111 away from the microwave waveguide 120; the gap between the two power amplification and combining submodules 111 is connected to the gap between the two microwave waveguides 120; the air generated by the wind-cooling structure 150 is transmitted to the electrodeless ultraviolet lamp tube 130 through the gap between the two adjacent power amplification and combining submodules 111 and the gap between the two adjacent microwave waveguides 120.

[0079] Specifically, the air-cooling structure 150 can be a fan, and the air-cooling structure 150 is used to reduce the temperature of the electrodeless ultraviolet lamp 130.

[0080] Optional, Figure 7 This is a schematic diagram of another ultraviolet light generating device according to an embodiment of the present invention, with reference to... Figure 7 The ultraviolet light generating device provided in this embodiment also includes a first housing 160 and a second housing 170; the first housing 160 is used to cover the electrodeless ultraviolet lamp 130, two power amplification and synthesis sub-modules 111, two detection sub-modules 112 and two spaced microwave waveguides 120; the second housing 170 is used to cover the control module 140 and two drive control sub-modules 113; the first housing 160 and the second housing 170 are spaced apart by a set distance.

[0081] Specifically, the first housing 160 and the electrodeless ultraviolet lamp 130, power amplification and synthesis submodule 111, detection submodule 112, and microwave waveguide 120 within the first housing 160 can collectively constitute another illumination structure. The volume of this illumination structure can be the same as or approximately equal to the volume of a current ultraviolet light generating device including a magnetron, thus allowing the illumination structure provided in this embodiment to directly replace the current ultraviolet light generating device including a magnetron. This illumination structure is movable relative to the second housing 170. The second housing 170 and the drive control submodule 113 and control module 140 within the second housing 170 can constitute a control structure, which can remain stationary. The illumination structure and the control structure are detachably connected via multiple coaxial cables 114.

[0082] This embodiment includes a first housing 160 and a second housing 170, which facilitates the installation and relocation of the ultraviolet light generating device. Both the first housing 160 and the second housing 170 can be rectangular parallelepipeds.

[0083] It should be noted that the first housing 160 will not block the ultraviolet light output from the stepless ultraviolet lamp 130. The air-cooling structure 150 can be located outside or inside the first housing 160.

[0084] Optionally, each power amplification and synthesis submodule includes at least four power amplification units; the output power of each power amplification unit ranges from 300W to 600W.

[0085] Specifically, the output power of a single power amplifier unit can be 300W, 400W, 500W, or 600W, etc. The number of power amplifier units can be 4, 5, 6, 7, 8, or 9, etc.

[0086] In this embodiment, the two solid-state microwave sources can each output a 3000W microwave signal, which can meet the microwave power requirements of electrodeless ultraviolet lamps.

[0087] This embodiment also provides a semiconductor processing apparatus, which includes the ultraviolet light generating device provided in any embodiment of the present invention.

[0088] Specifically, the semiconductor processing equipment provided in this embodiment also includes a stage for carrying a wafer, an ultraviolet light generating device is disposed above the stage, the wafer is placed in the stage, and the ultraviolet light emitted by the ultraviolet light generating device irradiates the surface of the wafer.

[0089] The semiconductor processing equipment provided in this embodiment includes an ultraviolet light generating device. Since the semiconductor processing equipment provided in this embodiment includes the ultraviolet light generating device provided in any embodiment of the present invention, it also includes the technical features and corresponding beneficial effects of the ultraviolet light generating device.

[0090] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An ultraviolet light generating device, characterized in that, include: At least one solid-state microwave source, wherein the solid-state microwave source includes a power amplification and combining submodule, a detection submodule, a drive control submodule, and a coaxial cable; the drive control submodule is spaced apart from the power amplification and combining submodule by a predetermined distance, and the two are electrically connected via a coaxial cable of a predetermined length; the predetermined length is configured such that when the power amplification and combining submodule moves relative to the drive control submodule, the drive control submodule remains in a fixed position; the detection submodule is used to detect the reflected power and incident power of the solid-state microwave source to which it is located; the drive control submodule is also electrically connected to the detection submodule and is used to adjust at least one of the output frequency and output power of the solid-state microwave source to which it is located based on the reflected power and the incident power; At least one microwave waveguide, the number of which is equal to the number of the solid-state microwave sources, and the microwave waveguides correspond one-to-one with the solid-state microwave sources; the microwave waveguides are located on one side of the power amplification and combining submodule in the corresponding solid-state microwave source, and are coaxially connected to the power amplification and combining submodules in a waveguide manner, for transmitting the microwave energy output by the power amplification and combining submodules; An electrodeless ultraviolet lamp is located on the side of the microwave waveguide away from the power amplification and synthesis submodule. The electrodeless ultraviolet lamp generates ultraviolet light under the action of microwave energy.

2. The ultraviolet light generating device according to claim 1, characterized in that, It includes a control module, two solid-state microwave sources, and two spaced microwave waveguides; The two power amplification and combining submodules in the two solid-state microwave sources are spaced apart. Each of the aforementioned detection submodules is located in the gap between the two microwave waveguides; The control module is electrically connected to the drive control submodule in each of the solid-state microwave sources. The control module is used to control the working state of each of the drive control submodules to control the two solid-state microwave sources to work alternately or simultaneously.

3. The ultraviolet light generating device according to claim 1, characterized in that, The drive control submodule is also used to store the target light intensity and light intensity mapping table of the electrodeless ultraviolet lamp, and to adjust at least one of the output frequency and output power of the solid-state microwave source according to the reflected power, the incident power, the light intensity mapping table and the target light intensity, wherein the light intensity mapping table represents the correspondence between the ratio of actual reflected power to actual incident power and the preset actual light intensity.

4. The ultraviolet light generating device according to claim 1 or 2, characterized in that, The power amplification and combining submodule includes a power dividing unit, a liquid cooling plate, multiple power amplification units, and two power combining units. The input terminal of the power divider unit is electrically connected to the drive control submodule, and the multiple output terminals of the power divider unit are each electrically connected to one of the power amplifier units. At least two of the power amplification units are located on the first surface side of the liquid cooling plate and are in contact with the first surface of the liquid cooling plate. The remaining power amplification units are located on the second surface side of the liquid cooling plate and are in contact with the second surface of the liquid cooling plate. One power combining unit is provided on both the first surface side and the second surface side of the liquid cooling plate. The power amplification unit located on the first surface side of the liquid cooling plate is electrically connected to the power combining unit located on the first surface side, and the power amplification unit located on the second surface side of the liquid cooling plate is electrically connected to the power combining unit located on the second surface side. The two power combining units are coaxially connected to the corresponding microwave waveguides. The first surface and the second surface are arranged opposite to each other, and the area of ​​the first surface and the area of ​​the second surface are both larger than the area of ​​other surfaces in the liquid cooling plate.

5. The ultraviolet light generating device according to claim 4, characterized in that, The drive control submodule includes a microwave drive unit, a control unit, and a DC power supply unit; The control unit is electrically connected to the microwave driving unit and the DC power supply unit. The control unit is used to control the output frequency of the microwave driving unit and the output power of each of the power amplification units according to the incident power and the reflected power. The microwave drive unit is electrically connected to the input terminal of the power divider unit, and the DC power supply unit is electrically connected to each of the power amplifier units.

6. The ultraviolet light generating device according to claim 1, characterized in that, It also includes a reflector; The reflector surrounds at least a portion of the electrodeless ultraviolet lamp and is used to reflect the ultraviolet light generated by the electrodeless ultraviolet lamp so that the reflected ultraviolet light reaches the part to be irradiated.

7. The ultraviolet light generating device according to claim 2, characterized in that, It also includes air-cooled structures; The air-cooled structure is located on the side of the power amplification and combining submodule away from the microwave waveguide; The gap between the two power amplification and combining submodules is connected to the gap between the two microwave waveguides; The air generated by the air-cooling structure is transmitted to the electrodeless ultraviolet lamp through the gap between two adjacent power amplification and synthesis submodules and the gap between two adjacent microwave waveguides.

8. The ultraviolet light generating device according to claim 2, characterized in that, It also includes a first housing and a second housing; The first housing is used to cover the electrodeless ultraviolet lamp, the two power amplification and combining sub-modules, the two detection sub-modules, and the two spaced microwave waveguides; The second housing is used to enclose the control module and the two drive control sub-modules; The first housing and the second housing are spaced apart by the predetermined distance.

9. The ultraviolet light generating device according to claim 4, characterized in that, Each of the power amplification and combining submodules includes at least four of the power amplification units; The output power of each of the power amplifier units ranges from 300W to 600W.

10. A semiconductor processing apparatus, characterized in that, Includes the ultraviolet light generating device according to any one of claims 1-9.