Electric regulation and control method and device for vertical magnetic moment flipping, magnetic random access memory and electronic equipment

Abstract

The invention discloses an electrically-controlled vertical magnetic moment overturning method, which comprises the following steps of: generating an out-of-plane orbit flow of an orbital electronics device by coupling an orbital Hall effect material and a low-symmetry crystal face of a substrate, and further converting the out-of-plane orbit flow into an out-of-plane orbit torque through a strong spin-orbit coupling material; and flipping the magnetic moment of the magnetic layer in the orbital layer / strong spin-orbit coupling layer / magnetic layer structure. The low symmetry of the substrate means that only one single-rotation symmetric axis and one mirror symmetry exist, or only one single-rotation symmetric axis exists. And the track layer is made of a metal material with a track Hall effect. And the strong spin orbit coupling layer is made of a metal material with a strong spin orbit coupling effect. The invention realizes the track electronics device which is simple in structure, practical and easy to prepare at room temperature, can be used for the random access memory and can realize high-efficiency electric regulation and control of vertical magnetization overturning under the zero magnetic field.

Description

Technical Field

[0001] This disclosure belongs to the field of orbital / spintronic device technology, and particularly relates to electrical control methods, devices, magnetic random access memories, and electronic devices for vertical magnetic moment reversal. Background Technology

[0002] Currently, spin-orbit torque-based devices face significant limitations at the material level. Their core functional layers typically utilize precious metals with strong spin-orbit coupling effects, such as platinum (Pt), palladium (Pd), and tungsten (W). This not only restricts the range of available materials but also leads to high costs and potential environmental burdens. Physically, both traditional and emerging spin-orbit torque devices often cannot spontaneously achieve multifunctional magnetic moment manipulation (especially vertical magnetization reversal). To achieve this, external magnetic fields, or designs involving in-plane equivalent magnetic fields and asymmetric geometries, are usually necessary to break the system's symmetry. These auxiliary solutions undoubtedly increase the complexity of the device structure and the difficulty of fabrication, while also leading to increased power consumption and limited integration density. Therefore, developing a pure spin-orbit torque device that requires no external magnetic field, has a simple structure, is easy to fabricate, and can efficiently achieve vertical magnetization electrical manipulation has become crucial for advancing this field.

[0003] Orbital torque, utilizing the Orbital Hall Effect (OHE) or Orbital Rashba–Edelstein Effect (OREE), provides a fully electrical magnetic moment manipulation mechanism, paving the way for the development of low-energy, non-volatile advanced electronic devices. Orbital torque technology based on the Orbital Hall Effect offers significant advantages in terms of economic efficiency and sustainability. It eliminates dependence on precious or heavy metals such as Pt, allowing full utilization of abundant and inexpensive 3d / 4d transition metals such as Ti and Cr. This not only reduces raw material costs but also decreases reliance on scarce resources and hazardous materials.

[0004] The orbital Hall effect (or orbital Lashba-Ederstein effect) originates from another intrinsic property of electrons—orbital angular momentum. When an external electric field is applied, orbital hybridization occurs in the material, forming a specific orbital texture, which generates a net orbital angular momentum flow, i.e., orbital current. This effect is similar to the spin Hall effect (or orbital Lashba-Ederstein effect), but the key difference is that a strong orbital Hall effect can be widely present in light element materials with weak spin-orbit coupling, such as 3d elements like Ti, Mn, Cr, V, Ni, and Cu, and 4d transition metals like Zr, Nb, Mo, Tc, Ru, Rh, Pd, and Ag. The orbital Hall conductivity of these materials can theoretically be very high, efficiently converting charge flow into orbital current.

[0005] Magnetic moment manipulation based on the orbital Hall effect (or orbital Lashba-Ederstein effect) typically employs a heterojunction structure of "orbital Hall material / strong spin-orbit coupling material / ferromagnetic material". First, the charge flow through the orbital Hall material layer is converted into orbital current through the orbital Hall effect (or orbital Lashba-Ederstein effect). Subsequently, this orbital current is injected into the adjacent strong spin-orbit coupling material layer, where it is efficiently converted into spin current through an orbital-spin conversion process, thus flipping the magnetic moment of the ferromagnetic layer. However, current conventional orbital currents only have an in-plane component, and manipulating the vertical magnetic moment flip using orbital torque requires an external magnetic field or other asymmetric designs. These techniques often complicate system design and introduce limitations such as increased energy consumption and integration difficulty. Therefore, fundamentally realizing the generation of out-of-plane orbital current and orbital torque is the preferred method for efficiently flipping the vertical magnetic moment without external magnetic field assistance, and it also offers advantages such as simple device structure and ease of fabrication. Summary of the Invention

[0006] This disclosure addresses the problems in the prior art by proposing an electrically controlled method for reversing the vertical magnetic moment. This method utilizes the coupling between an orbital Hall material and a low-symmetry crystal plane of a substrate to generate out-of-plane orbital currents in orbital electronics devices. These currents are then converted into out-of-plane orbital torques through a strong spin-orbit coupling material. Furthermore, the vertical magnetic moment of the ferromagnetic layer is reversed within the orbital layer / strong spin-orbit coupling layer / vertical ferromagnetic layer structure. This method involves sequentially growing an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer on a low-symmetry substrate. Out-of-plane polarized orbital currents are generated through the coupling between the low-symmetry crystal plane of the substrate and the orbital layer, and are converted into out-of-plane orbital torques through the strong spin-orbit coupling layer. Additionally, the vertical magnetic moment of the magnetic material, such as the ferromagnetic layer, is reversed.

[0007] Based on the physical mechanism of torque reversal of the vertical magnetic moment, the conventional heavy metal spin Hall effect and the light metal orbital Hall effect only have in-plane components. Reversing the vertical magnetic moment requires external magnetic field assistance, or the introduction of an in-plane equivalent magnetic field and asymmetric design to break the symmetry. Therefore, this disclosure proposes a method to achieve zero-magnetic-field electrically controlled reversal of the vertical magnetic moment by using orbital flow generated by coupling the orbital layer with a low-symmetry crystal plane of the substrate, and converting it into out-of-plane orbital torque through a strong orbital coupling layer. This method is applicable when the substrate surface has only one mirror plane plus one rotational symmetry (C...). 1v When the symmetry is such that the current has a component perpendicular to the mirror plane, out-of-plane orbital torque will be allowed. Furthermore, when there is only one rotational symmetry (C1 symmetry), applying the current in any direction within the plane of the sample film surface will allow out-of-plane orbital torque to be generated.

[0008] The low symmetry mentioned here refers to the existence of only one rotational symmetry axis and one mirror symmetry, or only one rotational symmetry.

[0009] The symmetry of the orientation crystal plane of the substrate has only one one-fold rotational symmetry axis and one mirror symmetry, or only one one-fold rotational symmetry.

[0010] The aforementioned are metals or alloys of any element and proportion thereof with strong orbital Hall effect, such as Ti, V, Cr, Mn, Fe, Co, Sc, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Lu, Hf, Ta, W, Re, Os, Ir, and Pt.

[0011] The strong spin-orbit coupling layer is a metal such as Pt, Ta, W, Ir, Pd, Rh, Au, or an alloy material of any element and proportion thereof.

[0012] The ferromagnetic layer is a ferromagnetic heterostructure with a perpendicular magnetic moment. The ferromagnetic heterostructure with a perpendicular magnetic moment includes, but is not limited to, Co / Pt, CoFeB / MgO, Co / Pd, Co / W, Co / Ta, Fe / W, L10-FePt, CoPt, TbFeCo, GdFeCo, Fe3GaTe2 structures or composite stacked structures of these structures.

[0013] One aspect of this disclosure is an electrically controlled method for reversing the vertical magnetic moment. This method utilizes the coupling between an orbital Hall effect material and a low-symmetry crystal plane of a substrate to generate out-of-plane orbital currents in orbital electronics devices. These currents are then converted into out-of-plane orbital torques via a strong spin-orbit coupling material, and the vertical magnetic moment of the ferromagnetic layer is reversed within the orbital layer / strong spin-orbit coupling layer / vertical ferromagnetic layer structure. The low symmetry refers to the existence of only one rotational symmetry axis plus one mirror symmetry, or only one rotational symmetry axis.

[0014] In one aspect of this disclosure, the orbital layer is a metal exhibiting a strong orbital Hall effect, such as Ti, V, Cr, Mn, Fe, Co, Sc, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, or an alloy of any of these elements and proportions. The substrate has low symmetry. The ferromagnetic layer has a perpendicular magnetic moment.

[0015] One aspect of this disclosure is a method for fabricating an electrically controlled vertical magnetic moment reversal device, wherein an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer are sequentially grown on a low-symmetry substrate.

[0016] The ferromagnetic layer has a ferromagnetic heterostructure with a perpendicular magnetic moment. The ferromagnetic heterostructure with a perpendicular magnetic moment includes, but is not limited to, Co / Pt, CoFeB / MgO, Co / Pd, Co / W, Co / Ta, Fe / W, L10-FePt, L10-CoPt, CoPt, TbFeCo, GdFeCo, Fe3GaTe2 structures or any composite stacked structure of the above structures.

[0017] When the ferromagnetic layer has a structure with a strong spin-orbit coupling effect, it can replace the strong spin-orbit coupling layer and the perpendicular magnetic layer. The magnetic structure includes, but is not limited to, Co (or CoFeB) / heavy metal (Pt, or Pd, or Ir, or Ta) structure, L10-FePt, L10-CoPt, and Fe3GaTe2 structure.

[0018] One aspect of this disclosure is an electrically controlled vertical magnetic moment reversal device, the device having a substrate and an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer sequentially grown on the substrate.

[0019] One aspect of this disclosure is an electrically manipulated magnetic tunnel junction storage device with vertical magnetic moment reversal, the device having a substrate and, sequentially grown on the substrate, an orbital layer, a strong spin-orbit coupling layer, a ferromagnetic layer, a barrier layer grown on the ferromagnetic layer, and a reference layer.

[0020] In one aspect of this disclosure, a magnetic random access memory includes a plurality of memory cells, each memory cell including the aforementioned electrically controlled vertical magnetic moment reversal device.

[0021] One aspect of this disclosure is an electronic device that includes a magnetic random access memory as described above. Attached Figure Description

[0022] The above and other objects, features, and advantages of exemplary embodiments of the present invention will become readily apparent from the following detailed description taken in conjunction with the accompanying drawings. Several embodiments of the invention are illustrated in the drawings by way of example and not limitation, wherein:

[0023] Figure 1 According to one embodiment of the present disclosure, the C-plane of the low-symmetry (210) plane of the SrTiO3 substrate... 1v Schematic diagram of symmetry.

[0024] Figure 2 According to one embodiment of the present disclosure, the C-plane of the low-symmetry (311) plane of the MgO substrate 1v Schematic diagram of symmetry.

[0025] Figure 3 A schematic diagram of a method for fabricating a vertical magnetic moment reversing device according to one embodiment of the present disclosure.

[0026] Figure 4 A schematic diagram of a stacked structure of a vertical magnetic moment reversing device according to one embodiment of the present disclosure.

[0027] Figure 5 The current-driven reversal curve of the SrTiO3 (210) / Ti / Pt / Co / Pt vertical magnetic moment reversal device without external field assistance, according to one embodiment of the present disclosure.

[0028] Figure 6 The current-driven reversal curve of the MgO (311) / Ti / Pt / Co / Pt vertical magnetic moment reversal device without external field assistance according to one embodiment of the present disclosure.

[0029] Figure 7 A schematic diagram of a magnetic tunnel junction device according to one embodiment of the present disclosure. Detailed Implementation

[0030] According to one or more embodiments, this disclosure provides a method and device for generating out-of-plane orbital torque and realizing current-controlled reversal of the vertical magnetic moment without the assistance of an external magnetic field. Specifically, the device includes a low-symmetry substrate for generating out-of-plane orbital torque, an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer with a vertical magnetic moment. Device fabrication includes sequentially fabricating the low-symmetry substrate, the orbital layer, the strong spin-orbit coupling layer, and the ferromagnetic layer with a vertical magnetic moment. The low symmetry of the substrate includes two types of symmetry:

[0031] 1. There exists only one axis of rotational symmetry and one mirror symmetry (C). 1v Symmetry, equivalent to C s symmetry);

[0032] 2. There is only one one-dimensional rotational symmetry (C1 symmetry, i.e., no symmetry).

[0033] The single rotational symmetry here means that there is no symmetry at all; it only coincides with itself after rotating 360°. Either of the two types of symmetry satisfies the condition for generating an external torque outside the surface.

[0034] The orbital layer can be made of metals with strong orbital Hall effect, such as Ti, V, Cr, Mn, Fe, Co, Sc, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Lu, Hf, Ta, W, Re, Os, Ir, and Pt, or alloy materials of any element and proportion thereof.

[0035] In this embodiment of the disclosure, the substrate is selected using the specific orientation substrate, where the orientation crystal plane contains only C. 1vSymmetry or C1 symmetry, including but not limited to SrTiO3, MgO, Si, BaTiO3, NdGaO3, LaAlO3, LaLuO3, LaScO3, CeScO3, PrScO3, NdScO3, SmScO3, EuScO3, GdScO3, TbScO3, DyScO3, Sr2(GaAl)TaO6, LaGaO3, NdGaO3, SrLaGaO4, SrPrGaO4, (LaSr)(AlTa)O3, (NdSr)(AlTa)O3, NdAlO3, Nb-SrTiO3, SrLaAlO4, SrPrAlO4, YAlO3, GaNdAlO4, LuAlO3, Ge, GaAs, InSb, InP, GaSb, Gd3Ga5O 12 Nd3Ga5O 12 Gd3Sc2Ga3O 12 Y3Sc2Ga3O 12 Tb3Ga5O 12 Y3Fe5O 12 The (210), (310), (410), (510), (610), (710), ..., (211), (311), (411), ..., (221), (331), (441), ..., (hkl) crystal planes and their equivalent crystal plane families {210}, {310}, {410}, {510}, {610}, {710}, ..., {211}, {311}, {411}, ..., {221}, {331}, {441}, ..., {hkl}, etc. of cubic, quasi-cubic, or orthorhombic, or tetragonal crystal systems, including PMN-PT, GaN, TiO2, etc. Here, h, k, and l can take any values, as long as the (hkl) crystal plane satisfies C 1v Symmetry or C1 symmetry is sufficient. These crystal planes equivalently include their equivalent crystal plane families. For example, the equivalent crystal planes of the cubic {210} crystal plane family include (210), (201), (102), (120), (012), (021), (20-1), (10-2), (1-20), (01-2), (02-1), (-201), (-102), (-120), (-012), (-021), etc. The family of equivalent {hkl} crystal planes for hexagonal substrates such as Al2O3, ZnO, SiO2, CaF2, and SiC, including {111}, {112}, {113}, {114}, ..., {120}, {140}, {150}, ..., {121}, {131}, {141}, ..., where h, k, and l can be any numbers, as long as the (hkl) crystal planes satisfy C1v Symmetry or C1 symmetry is sufficient.

[0036] Each structural layer in this disclosure can be grown at room temperature or high temperature, with no special requirements for high temperature. It can be achieved through various thin film growth techniques, such as magnetron sputtering, molecular beam epitaxy, and pulsed laser deposition.

[0037] The embodiments disclosed herein utilize orbital current generated by coupling the orbital layer with a low-symmetry crystal plane of the substrate, which is then converted into out-of-plane orbital torque through a strong orbital coupling layer, thus deterministically flipping the vertical magnetic moment device. The device structure consists of only an orbital layer, a strong orbital coupling layer, and a vertical magnetic moment ferromagnetic layer. Each layer can be fabricated by magnetron sputtering at room temperature or high temperature, offering advantages such as simple structure, practicality, and ease of large-scale fabrication.

[0038] According to one or more embodiments, based on the physical mechanism of vertical magnetic moment reversal, the conventional heavy metal spin Hall effect and light metal orbital Hall effect only have in-plane components. Reversing the vertical magnetic moment requires external magnetic field assistance, or the introduction of an in-plane equivalent magnetic field and asymmetric design to break the symmetry. Therefore, this disclosure proposes a method to achieve zero-magnetic-field electrically controlled reversal of the vertical magnetic moment by using an orbital layer coupled to a low-symmetry crystal plane of the substrate to generate out-of-plane orbital current, which is then converted into out-of-plane orbital torque through a strong orbital coupling layer. This method is applicable when the substrate surface has only one mirror plane + one rotational symmetry (C...). 1v When the symmetry is such that the current has a component perpendicular to the mirror plane, out-of-plane orbital torque will be allowed. Furthermore, when there is only one rotational symmetry (C1 symmetry), applying the current in any direction within the plane of the sample film surface will allow out-of-plane orbital torque to be generated.

[0039] Figure 3 The present invention discloses a method for fabricating a vertical magnetic moment reversal device, the growth steps of which are as follows: (1) Selecting a SrTiO3 (210) or MgO (311) substrate with low symmetry crystal plane orientation.

[0040] (2) A thin film is grown on the substrate by magnetron sputtering at room temperature to form an orbital layer. In this embodiment, it is 1 nm Ti.

[0041] (3) A strong spin-orbit coupling layer is grown on the orbital layer by magnetron sputtering at room temperature. In this embodiment, it is 1.9 nm Pt.

[0042] (4) A vertical ferromagnetic layer is grown on the coupling layer by magnetron sputtering at room temperature. In this embodiment, the ferromagnetic layer has a Co (0.8 nm) / Pt (1.5 nm) structure. Furthermore, a protective layer can be grown on the ferromagnetic layer structure. In this embodiment, the protective layer has a MgO (2 nm) / Ta (2 nm) structure.

[0043] like Figure 4As shown, the vertical magnetic moment reversal device includes a substrate, and an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer grown sequentially on the substrate. The growth surface of the substrate has a low-symmetry crystal plane.

[0044] Figure 5 and Figure 6 Ti / Pt / Co / Pt vertical magnetic moment reversal devices fabricated on SrTiO3 (210) and MgO (311) substrates are presented respectively. In these two embodiments, the SrTiO3 (210) and MgO (311) substrates provide low-symmetry crystal planes, and the Ti, Pt, and Co / Pt layers are respectively an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer. The SrTiO3 (210) and MgO (311) crystal planes have only one mirror symmetry. When the applied current has a component in the direction perpendicular to the mirror plane, the Ti orbital layer couples with the crystal plane to generate an out-of-plane orbital current. This current is converted into a spin current with an out-of-plane spin polarization component through the strong spin-orbit coupling layer, which acts on the ferromagnetic layer and reverses the vertical magnetic moment. Figure 5 and Figure 6 The curves and flipping ratios of the vertical magnetic moment driven by current without the assistance of an external magnetic field are given. It shows that there is no flipping behavior only when the current is applied in a direction parallel to the mirror surface, and flipping behavior can be produced when the current is applied in other directions.

[0045] Figure 7 A schematic diagram of the magnetic tunnel junction, a basic structural unit of a magnetic random access memory (RAM), is shown in an embodiment of this disclosure. The fabrication process is as follows:

[0046] (1) Select a substrate with low symmetry crystal plane orientation. In this example, it is SrTiO3 (210).

[0047] (2) An orbital layer is grown on the substrate by magnetron sputtering at room temperature. In this embodiment, it is Ti.

[0048] (3) A strong spin-orbit coupling layer is grown on the orbital layer at room temperature using magnetron sputtering. In this embodiment, it is Pt.

[0049] (4) A vertical ferromagnetic layer is grown on the coupling layer at room temperature using magnetron sputtering as a free layer. In this embodiment, it is a Co / Pt structure.

[0050] (5) A barrier layer is grown on the ferromagnetic layer by magnetron sputtering at room temperature. In this embodiment, it is MgO.

[0051] (6) A reference layer is grown on the barrier layer by magnetron sputtering at room temperature. In this embodiment, it is a Co / Pt bilayer film.

[0052] Therefore, the electrically controlled vertical magnetic moment reversal method disclosed herein utilizes the coupling between the orbital Hall effect material and the low-symmetry crystal plane of the substrate to generate out-of-plane orbital currents in electronic devices. This is then converted into out-of-plane orbital torque through a strong spin-orbit coupling material. Furthermore, the magnetic moment of the magnetic layer is reversed within the orbital layer / strong spin-orbit coupling layer / magnetic layer structure. Each layer can be fabricated at room temperature by magnetron sputtering, offering advantages such as simple structure, practicality, and ease of large-scale fabrication. The selected orbital Hall effect materials are light metals such as Ti and Cr, which are environmentally friendly and economical.

[0053] This disclosure also realizes a simple, practical, and easily room-temperature fabricated orbital electronics device for random access memory (RAM) with high-efficiency electrically controllable vertical magnetization reversal under zero magnetic field conditions. This is an orbital torque device for next-generation RAM, capable of achieving efficient electrical reversal of the vertical magnetization state under zero applied magnetic field conditions. Its design is characterized by its simple structure, strong practicality, and ease of large-scale fabrication. The proposed device not only operates based on cutting-edge physical mechanisms but also boasts a simple construction and good compatibility with mainstream semiconductor manufacturing processes. This provides a novel fundamental technological path for developing next-generation magnetic random access memories with high-speed read / write speeds, low power consumption, and high storage density. This device demonstrates significant practical application prospects and large-scale production potential, playing a crucial role in fields with stringent requirements for storage performance and energy efficiency, such as artificial intelligence, large data centers, and the Internet of Things (IoT).

[0054] It should be understood that in the embodiments of the present invention, the term "and / or" is merely a description of the relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Furthermore, the character " / " in this document generally indicates that the preceding and following associated objects have an "or" relationship.

[0055] It is worth noting that although the spirit and principles of this invention have been described with reference to several specific embodiments, it should be understood that this invention is not limited to the disclosed specific embodiments, and the division of aspects does not imply that the features in these aspects cannot be combined; such division is merely for the convenience of description. This invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A method for electrically controlled vertical magnetic moment reversal, characterized in that, This method generates out-of-plane orbital current in orbital electronic devices by coupling the orbital Hall effect material with the low-symmetry crystal plane of the substrate. This current is then converted into out-of-plane orbital torque through a strong spin orbital coupling material. Furthermore, the vertical magnetic moment of the ferromagnetic layer is flipped in the orbital layer / strong spin orbital coupling layer / vertical magnetic layer structure.

2. The method according to claim 1, characterized in that, The low symmetry mentioned refers to the existence of only one rotational symmetry axis plus one mirror symmetry, or the existence of only one rotational symmetry.

3. The method according to claim 2, characterized in that, The orbital layer is a metallic material exhibiting the orbital Hall effect.

4. The method according to claim 1, characterized in that, This method involves sequentially growing an orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer on a substrate.

5. The method according to claim 1, characterized in that, The ferromagnetic layer has a ferromagnetic heterostructure with a perpendicular magnetic moment. The ferromagnetic heterostructure with a perpendicular magnetic moment includes, but is not limited to, Co / Pt, CoFeB / MgO, Co / Pd, Co / W, Co / Ta, Fe / W, L10-FePt, L10-CoPt, CoPt, TbFeCo, GdFeCo, Fe3GaTe2 structures or any composite stacked structure of the above structures.

6. The method according to claim 1, 4, or 5, characterized in that, The ferromagnetic layer has a structure with a strong spin-orbit coupling effect, including but not limited to Co / heavy metal structure, L10-FePt, L10-CoPt, and Fe3GaTe2 structure.

7. A method for fabricating an electrically controlled vertical magnetic moment reversal device, characterized in that, An orbital layer, a strong spin-orbit coupling layer, and a ferromagnetic layer are sequentially grown on a low-symmetry orientation substrate.

8. An electrically controlled vertical magnetic moment reversal device, characterized in that, The device structure has a low-symmetry orientation substrate, and an orbital layer, a strong spin-orbit coupling layer and a ferromagnetic layer grown sequentially on the substrate.

9. A magnetic random access memory, characterized in that, It includes multiple storage units, each of which includes the device as described in claim 8.

10. An electronic device, characterized in that, Including the magnetic random access memory as described in claim 9.

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