Nano material and preparation method thereof, thin film, photoelectric device and display device

Abstract

The invention discloses a nano material and a preparation method thereof, a thin film, a photoelectric device and a display device, and relates to the technical field of display. The nano-material comprises inorganic nano-particles and a first ligand connected to the inorganic nano-particles, and the structural formula of the first ligand is shown in the specification, r1, R2, R3, R4 and R5 are respectively and independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; in the formula, R1, R2, R3, R4 and R5 are independently selected from one or more of H, D, halogen, carboxyl, nitryl, cyano, aldehyde group, sulfo group, isothiocyano, C1-C30 halogenated alkyl, substituted or unsubstituted C1-C30 alkyl carbonyl and substituted or unsubstituted C1-C30 alkoxy carbonyl; at least one of R1, R2, R3, R4 and R5 is selected from isothiocyano groups. The nano material provided by the invention has relatively low electron mobility.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a nanomaterial and its preparation method, a thin film, an optoelectronic device, and a display device. Background Technology

[0002] Nanoparticles are microscopic particles on the nanometer scale, with at least one dimension being smaller than 100 nanometers. Nanoparticles possess characteristics such as small size effect, surface and interface effect, strong adsorption capacity and chemical activity, and strong permeability, and are widely used in various fields.

[0003] In related technologies, the electron mobility of nanoparticles is too high and needs further improvement. Summary of the Invention

[0004] In view of this, this application provides a nanomaterial and its preparation method, a thin film, an optoelectronic device, and a display device.

[0005] The embodiments of this application are implemented as follows: a nanomaterial comprising inorganic nanoparticles and a first ligand attached to the inorganic nanoparticles, wherein the structural formula of the first ligand is shown below:

[0006]

[0007] Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups;

[0008] When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms;

[0009] At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

[0010] Accordingly, this application also provides a method for preparing nanomaterials, comprising the following steps:

[0011] Provides inorganic nanoparticles, a first ligand, and a solvent;

[0012] The inorganic nanoparticles, the first ligand, and the solvent are mixed to obtain nanomaterials.

[0013] The structural formula of the first ligand is shown below:

[0014]

[0015] Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups;

[0016] When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms;

[0017] At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

[0018] Accordingly, this application also provides a thin film, the material of which includes the above-mentioned nanomaterials, or nanomaterials prepared by the above-mentioned preparation method.

[0019] Accordingly, this application also provides an optoelectronic device, comprising an anode, a light-emitting layer, an electronic functional layer and a cathode stacked sequentially, wherein the material of the electronic functional layer includes the above-mentioned nanomaterials or nanomaterials prepared by the above-mentioned preparation method.

[0020] Accordingly, this application also provides a display device, which includes the above-mentioned optoelectronic device.

[0021] The nanomaterials provided in this application have low electron mobility. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a flowchart of the preparation method of nanomaterials provided in the embodiments of this application;

[0024] Figure 2 This is a schematic diagram of the structure of the thin film provided in the embodiments of this application;

[0025] Figure 3 This is a flowchart of the thin film preparation method provided in the embodiments of this application;

[0026] Figure 4 This is a schematic diagram of the structure of the optoelectronic device provided in the embodiments of this application;

[0027] Figure 5 This is a schematic diagram of the structure of another optoelectronic device provided in the embodiments of this application.

[0028] Figure label:

[0029] Film 10;

[0030] Optoelectronic device 100; anode 20; light-emitting layer 30; electronic functional layer 11; cathode 40; hole functional layer 50. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0032] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0033] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0034] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0035] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0036] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. It is understood that when the group is substituted by a substituent, the number of substituents may be one, two, three or more, and when the number of substituents is two or more, the substituents may be the same or different.

[0037] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and for polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" means an aryl containing 6 to 40 ring atoms, and the aryl may optionally be further substituted. Preferably, it is a substituted or unsubstituted aryl having 6 to 30 ring atoms; more preferably, it is a substituted or unsubstituted aryl having 6 to 18 ring atoms; particularly preferably, it is a substituted or unsubstituted aryl having 6 to 14 ring atoms, and the aryl may optionally be further substituted. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0038] In this application, "alkyl" can mean straight-chain, branched, and / or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, etc. tert-amyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl The compounds include 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-hepta ...

[0039] A haloalkyl group represents an alkyl group in which at least one hydrogen atom is substituted with a halogen. Phrases containing this term include, for example, "C". 1-30 "Haloalkyl" refers to a haloalkyl group containing 1 to 30 carbon atoms. Each time it appears, it can independently be a C1 haloalkyl, C2 haloalkyl, C3 haloalkyl, C4 haloalkyl, C5 haloalkyl, C6 haloalkyl, C7 haloalkyl, C8 haloalkyl, or C9 haloalkyl, etc. The alkyl group in the haloalkyl group can be any of the above-mentioned alkyl groups. The haloalkyl group can be any position of H in the alkyl group, and any number of H can be replaced by a halogen. For example, C2 haloalkyl can be -CH2CH2X, -CH2CX2, -CHXCH2X, -CHXCH3, -CX2CH3, etc., where X represents a halogen.

[0040] In this application, "halogen" represents -Cl, -Br, -F or -I; carboxyl group represents -COOH; nitro group represents -NO2; cyano group represents -C≡N; aldehyde group represents -CHO; sulfonic acid group represents -SO3H; and isothiocyanate group represents -N=C=S.

[0041] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group is denoted by R. Where R represents an alkyl group, and C1 to C30 in the alkyl carbonyl group refers to the number of carbon atoms in the entire group.

[0042] In this application, the single bonds connecting the substituents extend through the corresponding ring, indicating that the substituent can be attached to any position on the ring. For example... R6 can be attached to any substituted site in the pyridine ring. Furthermore, in this application, when the same substituent appears multiple times, it can be independently selected from different groups; if the above general formula can contain m1 R6s, then each R6 can be independently selected from different groups.

[0043] Oxide nanoparticles contain oxygen vacancy defects. The more oxygen vacancy defects there are, the easier it is for ions to pass through, resulting in better conductivity and a higher carrier concentration. In optoelectronic devices, electron mobility is typically high while hole mobility is low. This carrier imbalance leads to excessive electron injection, causing electron accumulation in the light-emitting layer of inorganic nanoparticles. This increases the probability of non-luminescent recombination of electrons and holes, such as through Auger recombination, resulting in energy loss and affecting the luminous efficiency of the optoelectronic device. Furthermore, nanoparticles are prone to aggregation, reducing film formation performance. High surface roughness also increases the likelihood of leakage current, further degrading the performance of the optoelectronic device.

[0044] The technical solution of this application is as follows:

[0045] In a first aspect, embodiments of this application provide a nanomaterial comprising inorganic nanoparticles and a first ligand attached to the inorganic nanoparticles, wherein the structural formula of the first ligand is shown below:

[0046]

[0047] Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups;

[0048] At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

[0049] The nanomaterials provided in this application involve surface modification of inorganic nanoparticles using a first ligand containing a pyridine ring and an isothiocyanate structure. The pyridine ring is an electron-deficient aromatic heterocycle with all atoms coplanar. Its molecule contains a closed conjugated large π-bond system. The nitrogen atom in the pyridine ring has high electronegativity and a high electron cloud density around it, while the other parts of the pyridine ring have lower electron cloud densities. The overlap of π-electron clouds within the pyridine molecule creates a shared energy band. When an electric field is present, electrons forming the π bonds can move along the molecular chain. The pyridine in the first ligand can reduce the electron transport efficiency of the inorganic nanoparticles and weaken the probability of nonradiative electronic relaxation between inorganic nanoparticles. The isothiocyanate in the first ligand can passivate defects in the inorganic nanoparticles, reduce the conductivity of the nanomaterial, and thus further reduce the electron concentration and lower the... The electron injection transport capability of low-molecular-weight nanomaterials is enhanced by the interaction between the pyridine ring and isothiocyanate group to form an electron trap, which can capture free electrons and reduce the electron concentration. Furthermore, the combination of the pyridine ring and isothiocyanate group leads to local structural distortion of the nanomaterial, affecting the electron transport path and hindering electron movement, thereby further reducing electron mobility. Halogen, carboxyl, aldehyde, sulfonic acid, and haloalkyl groups directly connected to the pyridine ring in the first ligand can alter the local electric field on the surface of inorganic nanoparticles and passivate surface defects, reducing the defect state density and improving the film-forming properties when nanomaterials are prepared into thin films. In addition, the first ligand can increase the steric hindrance between inorganic nanoparticles, preventing their aggregation, reducing the probability of non-radiative Auger recombination of electrons, and inhibiting and avoiding the adsorption of impurity ions, thus improving the stability of the nanomaterials.

[0050] In some embodiments, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C1. 20 Halogenated alkyl, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 One or more of the alkoxycarbonyl groups.

[0051] In some embodiments, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C1. 10 Halogenated alkyl, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 One or more of the alkoxycarbonyl groups. C1~C 10 Halogenated alkyl, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10The shorter carbon chain in the alkoxycarbonyl group is beneficial for improving the solubility of nanomaterials. Furthermore, the haloalkyl group can bind to the dangling bonds of inorganic nanoparticles, C1–C2. 10 The shorter chain length of alkyl halogens is beneficial for increasing the binding force with dangling bonds, reducing the defect state density caused by dangling bonds, thereby reducing the electrical conductivity of nanomaterials and improving the film-forming properties of nanomaterials.

[0052] In some embodiments, R1, R2, R3, R4, and R5 are each independently selected from one or more of H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C5 haloalkyl, substituted or unsubstituted C1-C5 alkylcarbonyl, and substituted or unsubstituted C1-C5 alkoxycarbonyl; at least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

[0053] In some embodiments, at least one of R1, R2, R3, R4, and R5 is selected from H.

[0054] In some embodiments, one to three of R1, R2, R3, R4, and R5 are selected from H.

[0055] In some embodiments, at least one of R1, R2, R3, R4, and R5 is selected from halogens.

[0056] In some embodiments, at least one of R1, R2, R3, R4, and R5 is selected from C1 to C2. 20 Halogenated alkyl groups.

[0057] In some embodiments, at most one of R1, R2, R3, R4, and R5 is selected from isothiocyanates.

[0058] In some embodiments, the substituted or unsubstituted C1-C 30 Alkyl carbonyl groups include C1 to C2. 20 Alkyl carbonyl, C1-C 15 Alkyl carbonyl, C1-C 10 Alkyl carbonyl, C1 to C8 alkyl carbonyl, specifically methyl carbonyl, ethyl carbonyl, propyl carbonyl, butyl carbonyl, pentyl carbonyl, hexyl carbonyl, heptyl carbonyl, octyl carbonyl, nonyl carbonyl, decyl carbonyl, dodecyl carbonyl, pentadecyl carbonyl, octadecyl carbonyl, eicosyl carbonyl, pentadecyl carbonyl, etc.

[0059] In some embodiments, the substituted or unsubstituted C1-C 30 Alkoxycarbonyl groups include C1 to C2. 20 Alkoxycarbonyl, C1-C 15 Alkoxycarbonyl, C1-C 10Alkoxycarbonyl, C1-C8 alkoxycarbonyl, specifically can be methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl, pentoxycarbonyl, hexoxycarbonyl, heptoxycarbonyl, octoxycarbonyl, nonoxycarbonyl, decoxycarbonyl, dodecyloxycarbonyl, pentadecyloxycarbonyl, octadecyloxycarbonyl, eicosyloxycarbonyl, pentadecyloxycarbonyl, etc.

[0060] In some embodiments, the halogen includes one or more of -F, -Cl, -Br, and -I.

[0061] In some embodiments, the substituted C1-C 30 alkyl carbonyl, the substituted C1-C 30 The substituents in the alkoxycarbonyl group are each independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 20 Alkyl, C1-C 20 One or more of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0062] In some embodiments, the substituted C1-C 30 alkyl carbonyl, the substituted C1-C 30 The substituents in the alkoxycarbonyl group are each independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 10 Alkyl, C1-C 10 One or more of alkoxy groups and aryl groups having 6 to 10 ring atoms.

[0063] In some embodiments, C1 to C 30 Alkyl groups can be selected from C1 to C2. 25 Alkyl, C1-C 20 Alkyl, C1-C 10 Alkyl, C1-C8 alkyl, C1-C6 alkyl, etc., specifically methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, pentadecyl, octadecyl, eicosyl, pentadecyl, etc.

[0064] In some embodiments, C1 to C 30 Alkoxy groups can be selected from C1 to C2. 25 Alkoxy, C1-C 20 Alkoxy, C1-C 10 Alkoxy, C1-C8 alkoxy, C1-C6 alkoxy, etc., specifically methoxy, ethoxy, propoxy, butoxy, pentoxy, hexoxy, heptoxy, octoxy, nonoxy, decoxy, dodecoxy, pentadecoxy, octadecoxy, eicosoxy, pentadecoxy, etc.

[0065] In some embodiments, the aryl group having 6 to 30 ring atoms can be selected from aryl groups having 6 to 20 ring atoms, aryl groups having 6 to 18 ring atoms, aryl groups having 6 to 12 ring atoms, etc., specifically phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, etc.

[0066] In some embodiments, the first ligand is selected from one or more of the following structural formulas:

[0067]

[0068] Where m1, m2 and m3 are each independently selected from integers from 0 to 4;

[0069] R6, R7, and R8 are each independently selected from one or more of the following groups: halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, and haloalkyl.

[0070] It is understandable that m1, m2 and m3 can be independently selected from 0, 1, 2, 3 and 4. When m1 is 0, it means that the first ligand does not contain R6.

[0071] In some embodiments, m1 is selected from an integer from 0 to 1. m2 is selected from an integer from 1 to 3. m3 is selected from an integer from 0 to 2.

[0072] In some embodiments, the first ligand is selected from one or more compounds represented by formulas M1 to M9:

[0073] (CAS:52648-45-0) (CAS:50470-12-7) (CAS:76105-84-5) (CAS:1301254-81-8) (CAS:1698405-37-6) (CAS:1202076-88-7) (CAS:323588-81-4) (CAS:951753-87-0) (CAS:145255-18-1).

[0074] It should be noted that the first ligand M8 contains trifluoromethyl and cyano groups. The trifluoromethyl group can bond with defects in inorganic nanoparticles, reducing the defects of inorganic nanoparticles and improving their stability. The cyano group is an electron-withdrawing group, which can further reduce the electron concentration, making electron injection and holes more compatible.

[0075] In some embodiments, the inorganic nanoparticles are further connected to a second ligand.

[0076] At least a portion of the first ligand and the second ligand are connected by chemical bonds.

[0077] Furthermore, the second ligand includes a hydroxyl group. During the preparation of inorganic nanoparticles, hydroxyl groups are typically introduced, leaving residues on the surface of the nanoparticles. The presence of hydroxyl dangling bonds reduces the film-forming properties of the inorganic nanoparticles. However, in this solution, halogen, carboxyl, aldehyde, sulfonic acid, and haloalkyl groups can be chemically bonded to the second ligand, thereby passivating the defect states of the dangling bonds in the inorganic nanoparticles and improving the film-forming properties when the inorganic nanoparticles are prepared as thin films 10.

[0078] In some embodiments, at least one isothiocyanate group of the first ligand is coordinated to the inorganic nanoparticle. It is understood that when the first ligand contains only one isothiocyanate group, that isothiocyanate group is coordinated to the inorganic nanoparticle; when the first ligand contains two or more isothiocyanate groups, either only one isothiocyanate group or multiple isothiocyanate groups can be coordinated to the inorganic nanoparticle.

[0079] It should be noted that the first ligand can be coordinated to the inorganic nanoparticles via isothiocyanate, or it can be connected to the second ligand via other groups such as trifluoromethyl.

[0080] In some embodiments, the mass ratio of the inorganic nanoparticles to the first ligand is (8–15):1, for example, it can be 9:1, 10:1, 11:1, 12:1, 13:1, 14:1, or any range between two ratios. Within the range of the mass ratio, the first ligand can effectively passivate defects in the inorganic nanoparticles, reduce the electron injection transport capability of the nanomaterial, inhibit the aggregation of inorganic nanoparticles, and improve the stability of the nanomaterial.

[0081] In some embodiments, the average particle size of the inorganic nanoparticles is 8 nm to 15 nm, for example, it can be 9 nm, 10 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, or any range between two values. It should be noted that in this application, the particle size of the inorganic nanoparticles is measured by transmission electron microscopy (TEM).

[0082] In some embodiments, the inorganic nanoparticles include N-type inorganic nanoparticles. In other words, the inorganic nanoparticles are materials known in the art for use in the electronic functional layer 11.

[0083] In some embodiments, the N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first undoped metal oxide particle is made of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle is made of one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, and Ce. The semiconductor material comprises one or more of In, Ga, and the semiconductor material of group IIB-VIA includes one or more of ZnS, ZnSe, and CdS. The semiconductor material of group IIIA-VA includes one or more of InP and GaP. The semiconductor material of group IB-IIIA-VIA includes one or more of CuInS and CuGaS. The doping amount of the doping element in the first doped metal oxide particle is 0.1wt% to 15wt%, for example, it can be 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, 15wt%, or any range between two values.

[0084] Secondly, please refer to Figure 1 This application also provides a method for preparing nanomaterials, comprising the following steps:

[0085] S11 provides inorganic nanoparticles, a first ligand, and a solvent;

[0086] S12. Mix the inorganic nanoparticles, the first ligand, and the solvent to obtain nanomaterials;

[0087] The structural formula of the first ligand is shown below:

[0088]

[0089] Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups;

[0090] When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms;

[0091] At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

[0092] In S11:

[0093] It should be noted that the synthesis of inorganic nanoparticles can be achieved using conventional techniques in this field, such as physical methods, chemical methods, or other methods. Physical methods include mechanical ball milling, physical pulverization, and vacuum condensation. Chemical methods include chemical reduction, photochemical methods, sol-gel methods, radiation reduction, coprecipitation, and combustion synthesis. Other methods include condensation, explosion, high-energy processing, hydrothermal synthesis, sputtering synthesis, and ionization evaporation precipitation.

[0094] During the synthesis of inorganic nanoparticles, a second ligand may be introduced onto the surface of the inorganic nanoparticles due to solvents and other factors. The materials of the second ligand are described above and will not be repeated here.

[0095] Inorganic nanoparticles and the first ligand are described above and will not be repeated here.

[0096] In some embodiments, the solvent includes a polar solvent, which includes one or more of trimethoxybutanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N,N-dimethylformamide, pyrrole, and butyric acid.

[0097] In some embodiments, the mass-to-volume ratio of the inorganic nanoparticles to the solvent is (5-15) mg:1 mL, for example, it can be 6 mg:1 mL, 7 mg:1 mL, 8 mg:1 mL, 9 mg:1 mL, 10 mg:1 mL, 11 mg:1 mL, 12 mg:1 mL, 13 mg:1 mL, 14 mg:1 mL, or any range between two ratios. Within this range of mass-to-volume ratio, the dissolution and dispersion of the inorganic nanoparticles are beneficial. It should be noted that the mass-to-volume ratio of the inorganic nanoparticles to the solvent refers to the ratio of the mass of the inorganic nanoparticles to the volume of the solvent. Specifically, a mass-to-volume ratio of (5-15) mg:1 mL of inorganic nanoparticles to the solvent means that 1 mL of solvent corresponds to (5-15) mg of inorganic nanoparticles.

[0098] In some embodiments, the mass-to-volume ratio of the first ligand to the solvent is (0.5–1.5) mg:1 mL, for example, it can be 0.6 mg:1 mL, 0.7 mg:1 mL, 0.8 mg:1 mL, 0.9 mg:1 mL, 1 mg:1 mL, 1.1 mg:1 mL, 1.2 mg:1 mL, 1.3 mg:1 mL, 1.4 mg:1 mL, or any range between two ratios. Within the range of the mass-to-volume ratio, the dissolution and dispersion of the first ligand are favorable. Specifically, a mass-to-volume ratio of (0.5–1.5) mg:1 mL of the first ligand to the solvent means that 1 mL of solvent corresponds to the addition of (0.5–1.5) mg of the first ligand.

[0099] In some embodiments, the solvent includes a first solvent and a second solvent, and mixing the inorganic nanoparticles, the first ligand, and the solvent includes:

[0100] An inorganic nanoparticle dispersion and a first ligand dispersion are provided, wherein the inorganic nanoparticles include the inorganic nanoparticles and the first solvent, and the first ligand dispersion includes the first ligand and the second solvent;

[0101] The inorganic nanoparticle dispersion and the first ligand dispersion are mixed to obtain nanomaterials.

[0102] In some embodiments, the inorganic nanoparticle dispersion contains inorganic nanoparticles at a concentration of 10 mg / mL to 30 mg / mL, for example, 11 mg / mL, 12 mg / mL, 13 mg / mL, 14 mg / mL, 15 mg / mL, 16 mg / mL, 17 mg / mL, 18 mg / mL, 19 mg / mL, 20 mg / mL, 21 mg / mL, 22 mg / mL, 23 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 27 mg / mL, 28 mg / mL, 29 mg / mL, or any range between two such values. Within this concentration range, the dissolution and dispersion of the inorganic nanoparticles are favorable.

[0103] In some embodiments, the first solvent includes a polar solvent, which includes one or more of trimethoxybutanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N,N-dimethylformamide, pyrrole, and butyric acid.

[0104] In some embodiments, the mass concentration of the first ligand in the first ligand dispersion is 1 mg / mL to 3 mg / mL, for example, it can be 1.1 mg / mL, 1.2 mg / mL, 1.3 mg / mL, 1.4 mg / mL, 1.5 mg / mL, 1.6 mg / mL, 1.7 mg / mL, 1.8 mg / mL, 1.9 mg / mL, 2 mg / mL, 2.1 mg / mL, 2.2 mg / mL, 2.3 mg / mL, 2.4 mg / mL, 2.5 mg / mL, 2.6 mg / mL, 2.7 mg / mL, 2.8 mg / mL, 2.9 mg / mL, or any range between two values. Within the range of said mass concentration, the dissolution and dispersion of the inorganic nanoparticles are beneficial.

[0105] In some embodiments, the second solvent includes a polar solvent, which includes one or more of trimethoxybutanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N,N-dimethylformamide, pyrrole, and butyric acid.

[0106] In some embodiments, the mass ratio of the inorganic nanoparticles to the first ligand is (5–10):1, for example, it can be 6:1, 7:1, 8:1, 9:1, or any range between two ratios. Within the range of the mass ratio, the first ligand can effectively coordinate with the inorganic nanoparticles.

[0107] In S12:

[0108] In some embodiments, the mixing temperature of the inorganic nanoparticles, the first ligand, and the solvent is 100°C to 150°C, for example, it can be 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, 135°C, 140°C, 145°C, or any range between two values. The mixing time of the inorganic nanoparticles, the first ligand, and the solvent is 30 min to 60 min, for example, it can be 35 min, 40 min, 45 min, 50 min, 55 min, or any range between two values. Under these conditions, it is beneficial for the first ligand to coordinate and connect to the surface of the inorganic nanoparticles, thereby obtaining nanomaterials.

[0109] It should be noted that after the inorganic nanoparticles and the first ligand react, a precipitant is added for precipitation. The precipitant can be one or more of acetone, ethyl acetate, hexane, heptane, and octane.

[0110] Furthermore, after adding the precipitant, centrifugation is also included to promote the precipitation of nanomaterials. The centrifugation speed can be 3000 rpm to 5000 rpm, for example, 3200 rpm, 3500 rpm, 3800 rpm, 4000 rpm, 4200 rpm, 4500 rpm, 4800 rpm, or any range between two values.

[0111] Thirdly, please refer to Figure 2 This application embodiment also provides a thin film 10, the material of which includes the above-mentioned nanomaterials.

[0112] The thin film 10 provided in this application includes the above-mentioned nanomaterials. The first ligand increases the steric hindrance between inorganic nanoparticles, which can prevent the aggregation of inorganic nanoparticles, improve the stability of nanomaterials, thereby improving the film-forming properties of thin film 10, reducing the surface roughness of thin film 10, reducing the generation of leakage current, and also suppressing and avoiding the adsorption of impurity ions.

[0113] In some embodiments, the thickness of the thin film 10 is 30 nm to 50 nm, for example, it can be 32 nm, 35 nm, 38 nm, 40 nm, 42 nm, 45 nm, 48 nm, or any range between two values. It should be noted that in this application, the thickness of the thin film 10 is measured using a profilometer.

[0114] In some embodiments, the surface roughness of the thin film 10 is 1.1 nm to 2.5 nm, for example, it can be 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm, 1.6 nm, 1.7 nm, 1.8 nm, 1.9 nm, 2.0 nm, 2.1 nm, 2.2 nm, 2.3 nm, 2.4 nm, or any range between two values. Within the range of surface roughness, the thin film 10 exhibits good film-forming properties and high density. It should be noted that in this application, the surface roughness of the thin film 10 is measured using atomic force microscopy (AFM).

[0115] Please see Figure 3 This application also provides a method for preparing a thin film 10, comprising the following steps:

[0116] S21. Provide the above-mentioned nanomaterials;

[0117] S22. Deposit the nanomaterial to obtain thin film 10.

[0118] The nanomaterials can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition, etc. Solution methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0119] In some embodiments, depositing the nanomaterial includes: providing a nanomaterial dispersion comprising the nanomaterial and a third solvent, and depositing the nanomaterial dispersion.

[0120] In some embodiments, the mass concentration of the nanomaterial in the nanomaterial dispersion is 20 mg / mL to 30 mg / mL, for example, it can be 21 mg / mL, 22 mg / mL, 23 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 27 mg / mL, 28 mg / mL, 29 mg / mL, or any range between two values. Within this mass concentration range, uniform dissolution and dispersion of the nanomaterial is beneficial.

[0121] In some embodiments, the third solvent comprises a polar solvent, which includes one or more of trimethoxybutanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N,N-dimethylformamide, pyrrole, and butyric acid.

[0122] In some embodiments, annealing is further included after depositing the nanomaterial dispersion.

[0123] Furthermore, the annealing temperature is 120℃ to 160℃, for example, it can be 125℃, 130℃, 135℃, 140℃, 145℃, 150℃, 155℃, or any range between two values; the annealing time is 10min to 20min, for example, it can be 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min, or any range between two values. Thus, under the aforementioned annealing conditions, it is beneficial to promote the formation of the nanomaterial film, improve the density of the film 10, and reduce the roughness of the film 10.

[0124] Fifthly, please refer to Figure 4This application also provides an optoelectronic device 100, which includes an anode 20, a light-emitting layer 30, an electronic functional layer 11 and a cathode 40 stacked sequentially. The material of the electronic functional layer 11 includes the above-mentioned nanomaterials or nanomaterials prepared by the above-mentioned preparation method.

[0125] In the optoelectronic device 100 provided in this application, inorganic nanoparticles modified with a first ligand are used as the material of the electronic functional layer 11. The nanomaterial has a low electron mobility, which can be matched with the transmission efficiency of the hole end, so that the hole and electron injection are balanced, promoting the effective recombination of holes and electrons, reducing non-radiative Auger recombination, and improving the luminous efficiency of the optoelectronic device 100. The nanomaterial can also reduce the surface roughness of the electronic functional layer 11, reduce the generation of leakage current, improve the luminous performance and stability of the optoelectronic device 100, and extend the service life of the optoelectronic device 100.

[0126] The electronic functional layer 11 is the same as the thin film 10 described above, and will not be repeated here.

[0127] In some embodiments, the optoelectronic device 100 includes a light-emitting diode.

[0128] In some embodiments, the anode 20 and the cathode 40 each independently include one or more of a metal electrode, a carbon electrode, a metal oxide electrode, and a composite electrode; the material of the metal electrode includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the material of the carbon electrode includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO; the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. In this context, " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode consisting of sequentially stacked AZO, Ag, and AZO layers.

[0129] In some embodiments, the material of the light-emitting layer 30 includes a light-emitting material, which may include an organic light-emitting material or a quantum dot light-emitting material.

[0130] The organic light-emitting material may be selected from, but is not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)]), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex (excitoplex) light-emitting materials.

[0131] The quantum dot luminescent material may be selected from, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0132] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be selected from, but are not limited to, one or more compounds from group II-VI, group IV-VI, group III-V, and group I-III-VI. The shell of the core-shell quantum dots may consist of one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0133] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0134] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I- One or more of them.

[0135] In some embodiments, please refer to Figure 5 The optoelectronic device 100 further includes a hole functional layer 50, which is disposed between the anode 20 and the light-emitting layer 30.

[0136] Furthermore, the hole functional layer 50 includes one or more of a hole injection layer and a hole transport layer.

[0137] The electronic functional layer 11 includes one or more of an electron injection layer and an electron transport layer.

[0138] In some embodiments, the material of the hole functional layer 50 includes an organic p-type semiconductor material or an inorganic p-type semiconductor material, wherein the organic p-type semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'- bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4, 4'-(N-(4-sec-butylphenyl)diphenylamine)], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1, 1'-Biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spiron NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, undoped graphene;The inorganic P-type semiconductor material comprises one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the second-undoped metal oxide particles each independently comprise one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the second-doped metal oxide particles comprises one or more of Mo, W, Ni, Cr, Cu, and V. The metal selenide includes one or more of CuS, MoS3, and WS3; the metal selenide includes one or more of MoSe3 and WSe3; and the metal nitride includes p-type gallium nitride. The doping amount of the dopant element in the second doped metal oxide particle is 0.1 wt% to 15 wt%, for example, it can be 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, or any range between two values.

[0139] Sixthly, embodiments of this application also provide a display device, the display device including the above-described optoelectronic device 100.

[0140] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0141] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0142] Nanomaterials and Thin Films Example 1

[0143] This embodiment provides a nanomaterial comprising inorganic nanoparticles ZnO and a first ligand M8 attached to the surface of the inorganic nanoparticles. The mass ratio of the inorganic nanoparticles ZnO to the first ligand is 10:1. The structural formula of the first ligand M8 is as follows: Methods for preparing nanomaterials include:

[0144] An ethanol dispersion of 20 mg / mL ZnO and an ethanol dispersion of 2 mg / mL M8 were provided and mixed, wherein the mass ratio of ZnO to M8 in the dispersion was 7.5:1. The mixture was reacted at 125℃ for 45 min. Twice the volume of ethyl acetate as a precipitant was added to the mixture, and the mixture was centrifuged at 4000 rpm for 4 min. The addition of the precipitant and centrifugation were repeated three times. The lower precipitate was collected to obtain the nanomaterial.

[0145] This embodiment also provides a thin film prepared using the above-mentioned nanomaterials. The method for preparing the thin film includes:

[0146] The above nanomaterials were dissolved in ethanol to obtain a nanomaterial dispersion of 25 mg / mL. The nanomaterial dispersion was then spin-coated at 4000 rpm for 30 s, followed by annealing at 130 °C for 15 min to obtain a film with a thickness of 40 nm.

[0147] Nanomaterials and Thin Films Example 2

[0148] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M1 in this embodiment.

[0149] Nanomaterials and Thin Films Example 3

[0150] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M2 in this embodiment.

[0151] Nanomaterials and Thin Films Example 4

[0152] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M3 in this embodiment.

[0153] Nanomaterials and Thin Films Example 5

[0154] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M4 in this embodiment.

[0155] Nanomaterials and Thin Films Example 6

[0156] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M5 in this embodiment.

[0157] Nanomaterials and Thin Films Example 7

[0158] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M6 in this embodiment.

[0159] Nanomaterials and Thin Films Example 8

[0160] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M7 in this embodiment.

[0161] Nanomaterials and Thin Films Example 9

[0162] This embodiment is basically the same as Embodiment 1, except that the first ligand M8 is replaced with M9 in this embodiment.

[0163] Nanomaterials and Thin Films Example 10

[0164] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to M8 in the dispersion is 10:1, and the mass ratio of ZnO to M8 in the nanomaterial is 15:1.

[0165] Nanomaterials and Thin Films Example 11

[0166] This embodiment is basically the same as Embodiment 1, except that the mass ratio of ZnO to M8 in the dispersion is 5:1, and the mass ratio of ZnO to M8 in the nanomaterial is 8:1.

[0167] Nanomaterials and Thin Films Example 12

[0168] This embodiment is basically the same as Embodiment 1, except that the reaction temperature of ZnO and M8 is 150°C in this embodiment.

[0169] Nanomaterials and Thin Films Example 13

[0170] This embodiment is basically the same as Embodiment 1, except that the reaction temperature of ZnO and M8 is 100℃ in this embodiment.

[0171] Nanomaterials and Thin Films Example 14

[0172] This embodiment is basically the same as Embodiment 1, except that the reaction time of ZnO and M8 is 60 min in this embodiment.

[0173] Nanomaterials and Thin Films Example 15

[0174] This embodiment is basically the same as Embodiment 1, except that the reaction time of ZnO and M8 is 30 minutes in this embodiment.

[0175] Nanomaterials and Thin Films Example 16

[0176] This embodiment is basically the same as Embodiment 1, except that the inorganic nanoparticles ZnO are replaced with TiO2 in this embodiment.

[0177] Nanomaterials and Thin Films Example 17

[0178] This embodiment is basically the same as Embodiment 1, except that the inorganic nanoparticles ZnO are replaced with ZnMgO (magnesium-doped zinc oxide, wherein the magnesium doping amount is 5wt%).

[0179] Comparative Example 1 of Nanomaterials and Thin Films

[0180] This comparative example provides a nanomaterial, including inorganic nanoparticles ZnO.

[0181] Comparative Example 2 of Nanomaterials and Thin Films

[0182] This comparative example provides a nanomaterial, including inorganic nanoparticles TiO2.

[0183] Comparative Example 3 of Nanomaterials and Thin Films

[0184] This comparative example provides a nanomaterial comprising inorganic nanoparticles ZnMgO (magnesium-doped zinc oxide, wherein the magnesium doping amount is 5 wt%).

[0185] Comparative Example 4 of Nanomaterials and Thin Films

[0186] This embodiment is basically the same as that of Embodiment 1, except that the first ligand M8 is replaced with 4-chloro-3-(trifluoromethyl)pyridine in this embodiment.

[0187] The electron mobility of the nanomaterials of Examples 1-17 and Comparative Examples 1-4 when applied to the semiconductor devices of optoelectronic devices was tested, and the surface roughness of the thin films of Examples 1-17 and Comparative Examples 1-4 was tested. The results are shown in Table 1.

[0188] The carrier mobility test method is as follows: The current density-voltage curves of the optoelectronic devices (single carrier transport thin-film devices, EODs) of Examples 1-17 and Comparative Examples 1-4 are measured. The EOD structure is an anode / emitting layer / electron transport layer / cathode. The electron transport layer is a thin film of Examples 1-17 and Comparative Examples 1-4, respectively. The materials of the anode, emitting layer, and cathode are the same as in Device Example 1 below. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the current density is calculated using the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron mobility, where J represents the current density in mA / cm².-2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0189] Surface roughness was measured using atomic force microscopy (AFM).

[0190] Table 1

[0191]

[0192]

[0193] From Table 1, we can obtain:

[0194] As can be seen from Examples 1-9 and Comparative Examples 1 and 4, after the first ligand modifies the inorganic nanoparticles, the isothiocyanate and pyridine rings work synergistically to reduce the electron mobility of the nanomaterials. Furthermore, the first ligand increases the steric hindrance of the inorganic nanoparticles, preventing them from agglomerating, thereby improving the film-forming performance of the film and reducing the surface roughness of the film.

[0195] As can be seen from Examples 1, 10-15 and Comparative Example 1, under the preparation conditions of the nanomaterials provided in this application, the electron mobility of the nanomaterials is significantly reduced compared with the comparative example, and the roughness of the film is reduced, making it easier for the electron mobility to match the hole mobility, promoting the effective recombination of electrons and holes. The films of the examples can also reduce the adsorption of impurity ions, thereby improving the stability of the film.

[0196] As can be seen from Examples 16-17 and Comparative Examples 2-3, the first ligand can be used to modify a variety of inorganic nanoparticles to reduce the electron injection migration performance of nanomaterials, reduce the roughness of the film, and improve the film-forming properties of the film.

[0197] Device Example 1

[0198] This embodiment of the device provides an optoelectronic device, the fabrication method of which is as follows:

[0199] Provide ITO glass, use a cotton swab dipped in a small amount of soapy water to wipe the ITO surface to remove visible impurities, then use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes, then blow dry with nitrogen gas and irradiate with UV for 15 minutes to form an ITO anode.

[0200] 40 μL of TFB solution was pipetted onto the ITO anode and then spin-coated at 4000 rpm for 30 s. The solution was then annealed at 140 °C for 15 min to form a hole transport layer.

[0201] CdSe / ZnS was dissolved in n-hexane to prepare a 20 mg / mL solution. The solution was placed on the hole transport layer and spin-coated at 3000 rpm for 30 s. Then, it was annealed at 120 °C for 10 min to form a luminescent layer.

[0202] A thin film was prepared according to Example 1 to form an electron transport layer;

[0203] Place it in a vacuum coating machine and evacuate it to 4×10 -6 mbar, magnesium target material is deposited on the electron transport layer by vapor deposition, the magnesium target material is... A 20nm deposition rate was achieved; subsequently, the Ag target was activated, and the Ag target was deposited at... A cathode is formed by evaporating at a rate of 30 nm.

[0204] Packaging yields optoelectronic devices.

[0205] Device Examples 2-17

[0206] Device Examples 2 to 17 are basically the same as Device Example 1, except that the thin film of Example 1 is replaced with the thin film of Example 2 to 17 to form an electron transport layer and obtain an optoelectronic device.

[0207] Device Example 18

[0208] Device embodiment 18 is basically the same as device embodiment 1, except that the material of the hole transport layer is replaced with NiO in this embodiment.

[0209] Device Comparison Examples 1-4

[0210] The devices in Comparative Examples 1 to 4 are basically the same as those in Device Example 1, except that the thin film in Example 1 is replaced with the thin film in Comparative Examples 1 to 4 to form an electron transport layer, thus obtaining an optoelectronic device.

[0211] The leakage current, external quantum efficiency (EQE) (%), and lifetime (T95@1000nit) of the optoelectronic devices of Device Examples 1-18 and Device Comparative Examples 1-4 were tested, and the test results are shown in Table 2.

[0212] The leakage current test method is as follows: the efficiency test system built with Keithley 2400 and Keithley 6485 measures the corresponding voltage, current and brightness, and the leakage current can be obtained from the brightness-current curve.

[0213] The external quantum efficiency (EQE) is measured as the ratio of electron-hole pairs injected into inorganic nanoparticles to emitted photons, expressed as a percentage (%). It is an important parameter for evaluating the quality of electroluminescent devices and can be obtained using an EQE optical testing instrument. The specific calculation formula is as follows:

[0214]

[0215] Where ηe is the optical output coupling efficiency, ηr is the ratio of recombination carriers to injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, and K R K is the radiation process rate. NR This represents the rate of a non-radiative process. Test conditions: conducted at room temperature with an air humidity of 30–60%.

[0216] The test method for lifetime T95@1000nit is as follows: Under constant current or voltage drive, the time required for the brightness of the device to decrease to a certain percentage of its maximum brightness is defined as T95. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting the extended exponential decay brightness decay formula. For example, the lifetime at 1000nit is measured as T95@1000nit. The specific calculation formula is as follows:

[0217]

[0218] Among them, T95L refers to the lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0219] Table 2

[0220]

[0221]

[0222] From Table 2, we can obtain:

[0223] As can be seen from Device Examples 1-9 and Device Comparative Examples 1 and 4, the inorganic nanoparticles modified with the first ligand, as the material of the electron transport layer, improve the compactness of the electron transport layer by reducing the surface roughness of the electron transport layer, thereby significantly reducing the leakage current. Furthermore, by reducing electron injection, the transport efficiency of electrons and holes is matched, effectively improving the luminous efficiency of the optoelectronic device and extending the service life of the optoelectronic device. The nanomaterial in Device Comparative Example 4 does not contain isothiocyanate, and its optoelectronic device has a more obvious leakage current, and the luminous efficiency and service life performance of the optoelectronic device are both poor.

[0224] As can be seen from Device Examples 1, 10-15 and Device Comparative Example 1, under the conditions for preparing nanomaterials provided in this application, the optoelectronic devices of Device Examples 10-15 all have good performance, reduced leakage current, and improved luminous efficiency and lifespan.

[0225] As can be seen from Device Examples 1, 16-18 and Device Comparative Examples 1-3, the first ligand provided in this application is applicable to a variety of inorganic nanoparticles and has wide adaptability. By passivating the defects of inorganic nanoparticles, it reduces the electron concentration, lowers the probability of non-radiative Auger recombination, and improves the luminous efficiency and service life of optoelectronic devices.

[0226] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A nanomaterial, characterized in that, The nanomaterial comprises inorganic nanoparticles and a first ligand attached to the inorganic nanoparticles, the structural formula of which is shown below: Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups; When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms; At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

2. The nanomaterial as described in claim 1, characterized in that, The first ligand further includes at least one of the following features (1) to (5): (1) R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C1. 20 Halogenated alkyl, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 One or more of alkoxycarbonyl groups; at least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate; (2) R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C1. 10 Halogenated alkyl, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 One or more of alkoxycarbonyl groups; at least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate; (3) R1, R2, R3, R4, and R5 are each independently selected from one or more of H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C5 haloalkyl, substituted or unsubstituted C1-C5 alkylcarbonyl, and substituted or unsubstituted C1-C5 alkoxycarbonyl; at least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate; (4) When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C1. 20 Alkyl, C1-C 20 One or more of alkoxy groups and aryl groups having 6 to 20 ring atoms; (5) When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C1. 10 Alkyl, C1-C 10 One or more of alkoxy groups and aryl groups having 6 to 10 ring atoms.

3. The nanomaterial as described in claim 1, characterized in that, The halogen includes one or more of -F, -Cl, -Br, and -I; and / or At least one of R1, R2, R3, R4, and R5 is selected from H; and / or At least one of R1, R2, R3, R4, and R5 is selected from halogens; and / or At least one of R1, R2, R3, R4, and R5 is selected from C1 to C2. 20 Halogenated alkyl groups; and / or At most one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

4. The nanomaterial as described in claim 1, characterized in that, The first ligand is selected from one or more of the following structural formulas: Among them, m1, m2 and m3 are each independently selected from integers from 0 to 4; R6, R7, and R8 are each independently selected from halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, C1-C6 groups. 30 One or more of the haloalkyl groups.

5. The nanomaterial as described in claim 1, characterized in that, The first ligand is selected from one or more compounds represented by formulas M1 to M9:

6. The nanomaterial as described in claim 1, characterized in that, At least one isothiocyanate group of the first ligand is coordinated to the inorganic nanoparticle; and / or The mass ratio of the inorganic nanoparticles to the first ligand is (8-15):1; and / or The inorganic nanoparticles have an average particle size of 8 nm to 15 nm; and / or The inorganic nanoparticles include N-type inorganic nanoparticles; the N-type inorganic nanoparticles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials; the first undoped metal oxide particles are made of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the first doped metal oxide particles is made of one of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. Or multiple, wherein the doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS, wherein the doping amount of the doping element in the first doped metal oxide particle is 0.1wt% to 15wt%; and / or The inorganic nanoparticles are further connected to a second ligand; optionally, the second ligand includes a hydroxyl group; optionally, at least a portion of the first ligand and the second ligand are connected by chemical bonds.

7. A method for preparing nanomaterials, characterized in that, Includes the following steps: Provides inorganic nanoparticles, a first ligand, and a solvent; The inorganic nanoparticles, the first ligand, and the solvent are mixed to obtain nanomaterials. The structural formula of the first ligand is shown below: Among them, R1, R2, R3, R4, and R5 are each independently selected from H, D, halogen, carboxyl, nitro, cyano, aldehyde, sulfonic acid, isothiocyanate, C1-C6. 30 Halogenated alkyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C1-C 30 One or more of the alkoxycarbonyl groups; When substituted, each substituent is independently selected from D, halogen, carboxyl, nitro, sulfonic acid, cyano, C1-C2. 30 Alkyl, C1-C 30 One or more of alkoxy groups and aryl groups having 6 to 30 ring atoms; At least one of R1, R2, R3, R4, and R5 is selected from isothiocyanate.

8. The preparation method according to claim 7, characterized in that, The solvent includes a polar solvent, comprising one or more of the following: trimethoxybutanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N,N-dimethylformamide, pyrrole, and butyric acid; and / or The mass-to-volume ratio of the inorganic nanoparticles to the solvent is (5-15) mg:1 mL; and / or The mass-to-volume ratio of the first ligand to the solvent is (0.5–1.5) mg:1 mL; and / or The mass ratio of the inorganic nanoparticles to the first ligand is (5-10):1; and / or The inorganic nanoparticles, the first ligand, and the solvent are mixed at a temperature of 100℃ to 150℃ for a time of 30 min to 60 min; and / or The inorganic nanoparticles are further connected to a second ligand, the second ligand comprising a hydroxyl group; and / or The first ligand is selected from one or more compounds represented by formulas M1 to M9: The inorganic nanoparticles include N-type inorganic nanoparticles; the N-type inorganic nanoparticles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials; the first undoped metal oxide particles are made of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5; the metal oxide in the first doped metal oxide particles is made of one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The first doped metal oxide particle contains one or more of the following: Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material contains one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material contains one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material contains one or more of CuInS and CuGaS. The doping amount of the first doped metal oxide particle is 0.1 wt% to 15 wt%.

9. A thin film, characterized in that, The material of the thin film includes the nanomaterials as described in any one of claims 1 to 6, or the nanomaterials prepared by the preparation method as described in any one of claims 7 to 8.

10. The thin film as claimed in claim 9, characterized in that, The thickness of the thin film is 30 nm to 50 nm; and / or The surface roughness of the film is 1.1 nm to 2.5 nm.

11. An optoelectronic device, characterized in that, It includes an anode, a light-emitting layer, an electronic functional layer, and a cathode that are stacked sequentially, wherein the material of the electronic functional layer includes the nanomaterials as described in any one of claims 1 to 6, or the nanomaterials prepared by the preparation method as described in any one of claims 7 to 8.

12. The optoelectronic device as described in claim 11, characterized in that, The anode and the cathode each independently include one or more of the following: a metal electrode, a carbon electrode, a metal oxide electrode, and a composite electrode; the material of the metal electrode includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the material of the carbon electrode includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO; the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The material of the light-emitting layer includes organic light-emitting materials or quantum dot light-emitting materials; the organic light-emitting materials are selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)], 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium], diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, and TAD. The quantum dot luminescent material is selected from one or more of the following: F material, polymer containing BN covalent bonds, HLCT material, and Exciplex luminescent material; the quantum dot luminescent material is selected from one or more of the following: single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are respectively selected from one or more of the following: group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the shell of the core-shell quantum dot includes one or more layers. layer; the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnST e. HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; wherein the IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Multiple types; the I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2; the core-shell structured quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite quantum dots are made of doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has the general structural formula AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2 + Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; and / or The optoelectronic device further includes a hole functional layer disposed between the anode and the light-emitting layer. The hole functional layer is made of an organic p-type semiconductor material or an inorganic p-type semiconductor material. The organic p-type semiconductor material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4’-diamine, and N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4’-diamine. 4,4',4'-Bis(phenyl)-spiro, N,N'-Di(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-Tris(N-carbazolyl)-triphenylamine, 4,4',4'-Tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzphenanthrene, 4,4',4'-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene- 2,7-dimethyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-)phenylenevinylene Carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraaryl benzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine, spironolactone (NPB), nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinone dimethane, doped graphene, undoped graphene;The inorganic P-type semiconductor material comprises one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently comprise one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the second-doped metal oxide particles comprises one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide comprises one or more of CuS, MoS3, and WS3. The metal selenide comprises one or more of MoSe3 and WSe3. The metal nitride comprises P-type gallium nitride. The doping amount of the doping element in the second-doped metal oxide particles is 0.1 wt% to 15 wt%.

13. A display device, characterized in that, Including the optoelectronic device as described in any one of claims 11 to 12.

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