Constant-temperature design method for reflecting surface of compact range

Abstract

The invention discloses a compact range reflecting surface constant-temperature design method, belongs to the technical field of compact range reflecting surface design, and designs a compact range reflecting surface constant-temperature device which synchronously designs the appearance and size at the beginning of reflecting surface design. A vapor chamber with a capillary effect and conducting liquid is arranged in the compact range reflecting surface constant temperature device, and a semiconductor sheet and a temperature measuring sensor are arranged on the vapor chamber every 10-30 cm. A temperature-voltage feedback circuit matrix is designed, and positive and negative electrodes of all semiconductor chips and a probe interface of a temperature measurement sensor are connected to a control matrix. The invention designs a compact range constant-temperature technology, particularly a compact range reflecting surface constant-temperature technology which greatly reduces energy consumption compared with a traditional darkroom constant-temperature technology, and through the technology, constant temperature of the compact range reflecting surface is realized under the condition that the energy consumption is reduced, so that deformation of a metal reflecting surface is reduced, and the surface precision of the reflecting surface is guaranteed; therefore, the stability of the amplitude-phase characteristic of the dead zone is ensured.

Description

Technical Field

[0001] This invention belongs to the field of compact field reflective surface design technology, and particularly relates to a constant temperature design method for compact field reflective surfaces. Background Technology

[0002] Compact field reflectors are typically made of metal, and their quiet zone size is directly proportional to the size of the reflector. Currently, with increasing demands for compact field frequencies, the accuracy requirements for reflectors are further increasing. The industry standard for surface accuracy is currently a root mean square deviation of less than 50 micrometers. As the frequency increases, the accuracy requirements for this value will further increase. In addition to ensuring surface machining accuracy, because the reflector is made of metal, its volume will inevitably change with temperature. Therefore, for reflectors with diameters often exceeding 10 meters, a temperature change of 10 degrees Celsius can cause a significant deviation in surface accuracy from the machining precision. Thus, compact field calibration specifications have strict requirements regarding the temperature during testing.

[0003] In practical applications, for large compact field systems, due to the large volume of the darkroom, controlling the temperature of the entire darkroom in summer and winter consumes a lot of energy. Therefore, many organizations would rather reduce the accuracy of the reflective surface than maintain the temperature of the reflective surface within the specified range. To solve this problem, this invention provides a constant temperature device for the reflective surface, which ensures that the accuracy of the reflective surface meets the usage requirements while consuming far less energy than maintaining the constant temperature of the darkroom.

[0004] It should be noted that the above content falls within the inventor's technical knowledge and does not necessarily constitute prior art. Summary of the Invention

[0005] To address the aforementioned problems, the present invention aims to provide a method for designing a temperature-controlled compact field reflector, which relates to a temperature-controlled compact field technology, particularly a temperature-controlled compact field reflector technology that significantly reduces energy consumption compared to traditional anechoic chamber temperature-controlled technology. This technology achieves temperature control of the compact field reflector while reducing energy consumption, thereby reducing deformation of the metal reflector, ensuring the surface accuracy of the reflector, and thus guaranteeing the stability of the static phase characteristics.

[0006] To achieve the above objectives, this invention proposes a method for designing a constant temperature for a compacted field reflective surface, and designs a constant temperature device for a compacted field reflective surface. The shape and size of the constant temperature device for the compacted field reflective surface are designed simultaneously at the beginning of the reflective surface design, and it must at least cover the central part of the reflective surface.

[0007] The internal heating plate of the compression field reflective surface constant temperature device is equipped with a heat spreader that has capillary effect and conductive fluid.

[0008] On the heat spreader, a semiconductor chip and a temperature sensor are set every 10cm-30cm. The temperature generated at the contact surface between the semiconductor chip and the heat spreader is controlled by controlling the magnitude and direction of the current.

[0009] Design a temperature-voltage feedback circuit matrix, and connect the positive and negative terminals of all semiconductor chips and the temperature sensor probe interface to the control matrix. The control matrix controls the magnitude and direction of the current in the semiconductor chip at the corresponding location point according to the temperature at each location point and the desired temperature.

[0010] Finally, heat dissipation fins are provided on the back of each semiconductor chip.

[0011] Preferably, the number and spacing of the semiconductor wafers need to be calculated and determined comprehensively based on the location of the compact anechoic chamber, the expected temperature that can be reached, the upper limit of the semiconductor wafer power, the heat conduction capacity of the heat spreader, and the temperature difference requirements of the reflective surface.

[0012] Preferably, the constant temperature device for the compacted field reflective surface is made of copper.

[0013] Preferably, a phase change sheet is used to fill the gap between the heat spreader and the back of the reflective surface.

[0014] Preferably, if the semiconductor chip has a high power, a heat dissipation device is provided on its back side.

[0015] Preferably, the heat dissipation device is a cooling fan.

[0016] The constant-temperature design of the compact field reflective surface proposed in this invention can bring the following beneficial effects:

[0017] 1. This invention designs a compact field constant temperature technology, especially a compact field reflective surface constant temperature technology that greatly reduces energy consumption compared to traditional darkroom constant temperature technology. Through this technology, the constant temperature of the compact field reflective surface is achieved with reduced energy consumption, thereby reducing the deformation of the metal reflective surface, ensuring the surface accuracy of the reflective surface, and thus ensuring the stability of the amplitude and phase characteristics in the static zone.

[0018] 2. This invention designs a heat spreader that evenly covers the back of the reflective surface, filling the gaps with a soft thermally conductive material. Semiconductor heat sinks are then evenly laid on the back of the heat spreader, and heat dissipation fins and a cooling fan are installed on the back of the semiconductor heat sinks. All semiconductor heat sinks are centrally controlled; the temperature at each point is detected to control the direction and magnitude of the current, thereby controlling the semiconductor temperature. Attached Figure Description

[0019] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0020] Figure 1 This is a schematic diagram illustrating the compaction field testing principle of the present invention.

[0021] Figure 2 This is a schematic diagram of the constant temperature technology structure of the reflective surface of the present invention. Detailed Implementation

[0022] To more clearly illustrate the overall concept of the present invention, a detailed description will be provided below with reference to the accompanying drawings and examples.

[0023] Embodiments of this invention propose a method for isothermal design of a compacted field reflector surface, which utilizes a temperature equalization plate to achieve isothermal control of the compacted field reflector surface, and designs an isothermal device for the compacted field reflector surface, such as... Figure 1 As shown.

[0024] The temperature control device for the compact reflector surface should be designed in its shape and size simultaneously with the initial design of the reflector surface, and must at least cover the central part of the reflector surface (excluding the edge teeth). It should be made of copper and contain a heat spreader with capillary effect and conductive fluid. Figure 2 As shown, this ensures temperature uniformity on the back of the reflective surface.

[0025] Phase change plates are used to fill the gap between the heat spreader and the back of the reflector to ensure unobstructed heat conduction.

[0026] On the heat spreader, a semiconductor chip and a temperature sensor are placed every 10cm-30cm. The temperature generated at the contact surface between the semiconductor chip and the heat spreader is controlled by controlling the magnitude and direction of the current.

[0027] Design a temperature-voltage feedback circuit matrix, connect the positive and negative terminals of all semiconductor chips and the temperature sensor probe interface to the control matrix, and control the current magnitude and direction of the semiconductor chips at the corresponding locations based on the temperature at each location and the desired temperature, thereby controlling the temperature of the entire reflective surface to remain constant within a certain range.

[0028] It should be noted that the number and spacing of semiconductor wafers need to be calculated and determined comprehensively based on the location of the compact anechoic chamber, the expected temperature that can be reached, the power limit of the semiconductor wafers, the heat conduction capacity of the heat spreader, and the temperature difference requirements of the reflective surface.

[0029] Finally, heat dissipation fins are provided on the back of each semiconductor chip. If the power of the semiconductor chip is high, an additional heat dissipation device needs to be provided on its back. The heat dissipation device is preferably a cooling fan to prevent the semiconductor chip from overheating and burning out.

[0030] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0031] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A method for designing a temperature-controlled compaction field reflector surface, comprising designing a temperature-controlled compaction field reflector surface device, characterized in that, The compressive field reflective surface constant temperature device is designed in the same way as the reflective surface design, and its shape and size must at least cover the central part of the reflective surface. The internal heating plate of the compression field reflective surface constant temperature device is equipped with a heat spreader that has capillary effect and conductive fluid. On the heat spreader, a semiconductor chip and a temperature sensor are set every 10cm-30cm. The temperature generated at the contact surface between the semiconductor chip and the heat spreader is controlled by controlling the magnitude and direction of the current. Design a temperature-voltage feedback circuit matrix, connect the positive and negative terminals of all semiconductor chips and the temperature sensor probe interface to the control matrix, and control the current magnitude and direction of the semiconductor chip at the corresponding location point according to the temperature at each location point and the desired temperature. Finally, heat dissipation fins are provided on the back of each semiconductor chip.

2. The isothermal design method for a compact field reflective surface according to claim 1, characterized in that, The number and spacing of the semiconductor wafers need to be calculated and determined comprehensively based on the location of the compact anechoic chamber, the expected temperature that can be reached, the power limit of the semiconductor wafers, the heat conduction capacity of the heat spreader, and the temperature difference requirements of the reflective surface.

3. The isothermal design method for a compact field reflective surface according to claim 2, characterized in that, The constant temperature device for the compacted field reflective surface is made of copper.

4. The isothermal design method for a compact field reflective surface according to claim 3, characterized in that, Phase change plates are used to fill the gap between the heat exchanger and the back of the reflector.

5. The isothermal design method for a compact field reflective surface according to claim 4, characterized in that, If the semiconductor chip has a high power, a heat dissipation device is provided on its back side.

6. The isothermal design method for a compact field reflective surface according to claim 5, characterized in that, The heat dissipation device is a cooling fan.

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