Chemical vapor deposition equipment and temperature control method thereof

Abstract

The invention discloses chemical vapor deposition equipment and a temperature control method thereof. The chemical vapor deposition equipment comprises a cavity; a carrying device; the first gas inlet assembly is used for providing reaction gas for the wafer; the second gas inlet assembly is used for providing adjusting gas into the cavity; the bearing device comprises a bearing platform; the supporting columns are located on the surface of the bearing table and used for supporting the wafer so that a gap can be formed between the wafer and the surface of the bearing table; the heater is arranged in the bearing table; the adjusting column is arranged in the bearing table and can move up and down relative to the surface of the bearing table so as to change the distance between the top of the adjusting column and the lower surface of the wafer; the driving device is used for driving the adjusting column to move up and down; and the control device is configured to obtain measured temperature values of a plurality of temperature measuring points on the wafer, obtain an average temperature value according to the plurality of measured temperature values, and control the driving device of the corresponding area according to a difference value between each measured temperature value and the average temperature value so as to adjust the movement of the adjusting column.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a chemical vapor deposition apparatus and its temperature control method. Background Technology

[0002] The core of the coating process in chemical deposition equipment is to deposit the target material onto the wafer surface through a chemical reaction. Specifically, this involves introducing reactive gases into the cavity of the chemical deposition equipment and controlling the temperature and pressure within the cavity to provide conditions for the chemical reaction of the reactive gases.

[0003] The temperature for chemical reactions is typically provided by heaters on the wafer carrier stage. The wafer carrier stage is first preheated, and after reaching the preset temperature, the reaction gas enters the cavity. Once the gas reaches the wafer surface, the reaction gases react with each other to form a thin film.

[0004] Existing heaters have difficulty ensuring uniform temperature on the stage during heating. This non-uniformity is amplified when conducted to the wafer, resulting in an uneven thermal field as shown in the figure in practical applications. This leads to significant differences in film thickness in different areas of the wafer, resulting in poor uniformity of film thickness on the wafer surface. Summary of the Invention

[0005] In view of the above problems, the purpose of this application is to provide a chemical vapor deposition apparatus and a temperature control method thereof to improve the uniformity of wafer surface temperature.

[0006] According to one aspect of the present invention, a chemical vapor deposition apparatus is provided, comprising: a cavity; a support device disposed inside the cavity for supporting a wafer; a first gas inlet assembly disposed above the support device for supplying a reactive gas to the wafer; and a second gas inlet assembly disposed on one side of the cavity for supplying a regulating gas into the cavity; wherein the support device comprises: a support stage; a support column located on the surface of the support stage for supporting the wafer to form a gap between the wafer and the surface of the support stage; a heater disposed inside the support stage; an adjusting column disposed inside the support stage and movable vertically relative to the surface of the support stage to change the distance between its top and the lower surface of the wafer; a driving device for driving the adjusting column to move vertically; and a control device configured to: acquire measured temperature values ​​at a plurality of temperature measurement points on the wafer and obtain an average temperature value based on the plurality of measured temperature values, and control the driving device in the region corresponding to each measured temperature value to adjust the movement of the adjusting column based on the difference between each measured temperature value and the average temperature value.

[0007] Optionally, the temperature measurement point is located at the top of the support column; the support column is made of insulating material; and the support column is tapered, narrower at the top and wider at the bottom.

[0008] Optionally, the support platform is divided into multiple regions, each region is provided with the support column, and each region is provided with one or more adjustment columns surrounding the corresponding support column.

[0009] Optionally, the control device is further configured to: when the difference is greater than zero, control the drive device in the corresponding region to drive at least a portion of the adjusting column to descend; when the difference is less than zero, control the drive device in the corresponding region to drive at least a portion of the adjusting column to rise.

[0010] Optionally, the control device is further configured to: when the difference is greater than zero and less than a first preset value, control a portion of the adjustment columns in the corresponding area to descend; when the difference is greater than or equal to the first preset value, control all the adjustment columns in the corresponding area to descend.

[0011] Optionally, the control device is further configured to: control a portion of the adjustment columns in the corresponding area to rise when the difference is less than zero and greater than a second preset value; and control all the adjustment columns in the corresponding area to rise when the difference is less than or equal to the second preset value.

[0012] According to another aspect of the present invention, a temperature control method for a chemical vapor deposition apparatus is provided, comprising: acquiring measured temperature values ​​of a plurality of temperature measurement points of a wafer supported on a support device, and calculating an average temperature value based on the plurality of measured temperature values; calculating the difference between each measured temperature value and the average temperature value; and controlling an adjustment column disposed inside the support stage of the support device and corresponding to the area where the temperature measurement points are located to move up and down according to the difference, so as to change the distance between the top of the adjustment column and the lower surface of the wafer, thereby adjusting the cooling effect of the regulating gas flowing through the gap on the corresponding area of ​​the wafer.

[0013] Optionally, controlling the adjustment column to move up and down according to the difference includes: when the difference is greater than zero, controlling at least a portion of the adjustment column in the corresponding area to descend; when the difference is less than zero, controlling at least a portion of the adjustment column in the corresponding area to rise.

[0014] Optionally, controlling the descent of at least a portion of the adjustment columns in the corresponding region includes: controlling a portion of the adjustment columns in the corresponding region to descent when the difference is greater than zero and less than a first preset value; and controlling all the adjustment columns in the corresponding region to descent when the difference is greater than or equal to the first preset value.

[0015] Optionally, controlling at least a portion of the adjustment columns in the corresponding region to rise includes: when the difference is less than zero and greater than a second preset value, controlling a portion of the adjustment columns in the corresponding region to rise; and when the difference is less than or equal to the second preset value, controlling all the adjustment columns in the corresponding region to rise.

[0016] The unexpected technical effect of this application is: In this application, a temperature sensor is installed on the top of the support column to measure the temperature of the wafer surface at multiple points, thereby enabling real-time monitoring of different areas of the wafer.

[0017] Furthermore, this application provides an adjustable column that moves up and down in the support stage. By controlling the rise and fall of the adjustable column, the distance between the top of the adjustable column and the lower surface of the wafer is changed, thereby adjusting the cooling effect of the regulating gas flowing through the gap on the corresponding area of ​​the wafer.

[0018] Furthermore, this application also includes a control device that acquires the measured temperature values ​​of multiple measurement points on the wafer surface, calculates the average value of the multiple measured temperatures, calculates the difference between each measured temperature value and the average temperature value, and controls the raising and lowering of the adjustment column in the area where each temperature measurement point is located based on the difference.

[0019] In a preferred embodiment, the raising and lowering of the adjustment column is controlled in different zones according to the real-time temperature of different temperature measurement points, so as to achieve precise control of the wafer surface temperature.

[0020] In a preferred embodiment, the amount by which the regulating column rises or falls is controlled according to the magnitude of the difference, thereby controlling the degree of temperature regulation. Attached Figure Description

[0021] The above and other objects, features and advantages of this application will become clearer from the following description of embodiments with reference to the accompanying drawings, in which: Figure 1 A schematic cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of this application is shown; Figure 2 A cross-sectional schematic diagram of the bearing device provided in an embodiment of this application is shown; Figure 3a A top view of the support device according to an embodiment of this application is shown; Figure 3b A top view of another embodiment of this application is shown; Figure 4 A simulation diagram of the film thickness distribution on the wafer surface is shown in a specific embodiment; Figure 5a A schematic diagram of the adjusting column according to an embodiment of this application is shown; Figure 5b It shows Figure 5a Enlarged structural diagram at point A; Figure 6a A top view showing the distribution of support columns on the bearing platform is shown; Figure 6b It shows Figure 6a Enlarged view of point B in the middle; Explanation of reference numerals in the attached drawings: 110-cavity; 120-support device; 130-first air intake assembly; 140-second air intake assembly; 150-exhaust port; 121-support platform; 122-support column; 123-heater; 124-through hole; 125-adjusting column; 200-wafer. Detailed Implementation

[0022] The present application will now be described in more detail with reference to the accompanying drawings. In the various drawings, the same elements are indicated by similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, some well-known parts may not be shown.

[0023] Many specific details of this application, such as the structure, materials, dimensions, processing techniques, and methods of the devices, are described below to provide a clearer understanding of the application. However, as those skilled in the art will understand, this application may be implemented without adhering to these specific details.

[0024] Furthermore, certain terms are used in this patent specification and claims to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. This patent specification and claims do not distinguish components based on differences in name, but rather on differences in function.

[0025] Furthermore, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0026] This application may be presented in various forms, some of which will be described below.

[0027] Figure 1 A schematic cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of this application is shown; as follows: Figure 1 As shown, the chemical vapor deposition apparatus includes a cavity 110 and a support device 120. The support device 120 is disposed inside the cavity 110 and is used to support a wafer 200. A first gas inlet assembly 130 and a second gas inlet assembly 140 are also disposed inside the cavity 110. The first gas inlet assembly 130 is disposed above the support device 120 and is used to supply reaction gas to the wafer 200 on the support device 120. The second gas inlet assembly 140 is disposed on one side of the cavity 110 and is used to supply regulating gas into the cavity 110. An exhaust port 150 is provided on the side of the cavity 110 opposite to the second gas inlet assembly 140.

[0028] Figure 2 A cross-sectional schematic diagram of the bearing device provided in an embodiment of this application is shown. Figure 3a A top view of the support device according to an embodiment of this application is shown. Figure 3b A top view of another embodiment of this application is shown, as follows: Figure 2 , Figure 3a and Figure 3b As shown, the support device 120 includes a support platform 121, a support column 122 located on the surface of the support platform 121, and a heater 123 disposed inside the support platform 121.

[0029] The support post 122 is located on the surface of the support stage 121. One end of the support post 122 is in contact with the surface of the support stage 121, and the other end extends away from the support stage 121. The support post 122 is used to support the wafer. The wafer is placed on the support post 122, so that there is a certain gap between the wafer and the surface of the support stage 121 to allow the regulating gas G to pass through.

[0030] A heater 123 is disposed inside the stage 121. The heat generated by the heater 123 is transferred to the wafer 200 via radiation, causing a thin film to form on the surface of the wafer 200 during the deposition process. In this embodiment, the heater 123 is, for example, a resistance wire disposed inside the stage 121. When current passes through the resistance wire, electrical energy is converted into heat energy, thereby raising the temperature. Figure 3a In the illustrated embodiment, the heater 123 includes a plurality of concentrically arranged circular resistance wires. Figure 3b In the illustrated embodiment, the heater 123 includes a plurality of straight resistance wires, which are connected end-to-end. It is worth noting that... Figure 3a and Figure 3b Only some embodiments of heater 123 are described, but this does not limit the way heater 123 is installed.

[0031] When the resistance wire is heated, it is difficult to ensure that the temperature of the support stage 121 is uniform. This non-uniformity is amplified when it is conducted to the wafer 200. In practical applications, an uneven thermal field will occur, resulting in a large difference in the thickness of the thin film in different areas of the wafer 200, which makes the uniformity of the film thickness on the surface of the wafer 200 poor. Figure 4 A specific embodiment is shown, illustrating a simulation diagram of the film thickness distribution on the surface of wafer 200. Different colors represent different film thicknesses on the wafer 200 surface. For example, the first region Z01 is red, indicating the largest film thickness compared to other regions; the second region Z02 is yellow, indicating a smaller film thickness compared to the first region Z01; and the third region Z03 is dark blue, indicating the smallest film thickness compared to other regions. (Combined with...) Figure 4 The shapes of the various areas are not regular.

[0032] Based on this, the support device 120 in this embodiment of the application also includes an adjustment column disposed inside the support platform 121 and a drive device for driving the adjustment column to move up and down.

[0033] Figure 5a A schematic diagram of the adjusting column according to an embodiment of this application is shown. Figure 5b It shows Figure 5a An enlarged structural diagram at point A in the middle; as shown Figure 5a and Figure 5b As shown, the adjusting post 125 is disposed inside the support stage 121 and moves vertically. The distance between the top of the adjusting post 125 and the lower surface of the wafer 200 changes as the adjusting post 125 moves up and down. Specifically, when the adjusting post 125 is in the initial state, the top surface of the adjusting post 125 is higher than the upper surface of the support stage 121, and the distance between the top of the adjusting post 125 and the lower surface of the wafer 200 is L1; when the adjusting post 125 is in the descending state, the top surface of the adjusting post 125 is flush with the upper surface of the support stage 121, and the distance between the top of the adjusting post 125 and the lower surface of the wafer 200 is L2, and L2 is greater than L1; when the adjusting post 125 is in the ascending state, the top surface of the adjusting post 125 is higher than the upper surface of the support stage 121, and the distance between the top of the adjusting post 125 and the lower surface of the wafer 200 is L3, and L3 is less than L1.

[0034] During the deposition process, the temperature of the conditioning gas is typically lower than that of the wafer and the stage. The conditioning gas passes through the gap between the top of the conditioning post 125 and the lower surface of the wafer 200. When the distance between the top of the conditioning post 125 and the lower surface of the wafer 200 increases, the flow rate of the conditioning gas decreases, allowing the conditioning gas more time to exchange temperature with the wafer and the stage, thus reducing the temperature of the wafer and the stage to a greater extent. When the distance between the top of the conditioning post 125 and the lower surface of the wafer 200 decreases, the flow rate of the conditioning gas increases, and the conditioning gas quickly passes through the gap between the top of the conditioning post 125 and the lower surface of the wafer 200, reducing the time for the conditioning gas to exchange temperature with the wafer and the stage, thus having a smaller impact on the temperature of the wafer and the stage.

[0035] Furthermore, the support platform 121 is provided with a through hole 124 for the adjusting column 125 to move up and down. The through hole 124 is located in the blank area where the heater 123 is not laid. When the area where the heater 123 is laid coincides with the area where the through hole 124 is located, the area where the heater 123 is laid can be adjusted so that the heater 123 avoids the area where the through hole 124 is located. The adjusting column 125 is located in the through hole 124, and a driving device (not shown in the figure) drives the adjusting column 125 to move up and down in the through hole 124.

[0036] The support device in this embodiment further includes a temperature sensor (not shown in the figure), which is disposed on the top of the support column 122 and is used to collect the temperature of the contact point between the wafer 200 and the support column 122. It is worth noting that, to prevent the influence of the temperature of the support column 122 itself, in this embodiment, the support column 122 is made of insulating material and does not bear the responsibility of transmitting temperature to the wafer 200; it only serves a supporting function. Furthermore, the top of the support column 122 makes point contact with the surface of the wafer 200 to reduce the contact area between the top of the support column 122 and the wafer 200, thereby improving the measurement accuracy. In one embodiment, the support column 122 is tapered, narrower at the top and wider at the bottom.

[0037] The chemical vapor deposition apparatus of this application embodiment also includes a control device, which performs the following steps: S10: Obtain the measured temperature values ​​of multiple temperature measurement points on the wafer (i.e., the points where the support pillars contact the wafer), and obtain the average temperature value based on the multiple measured temperature values. S20: Obtain the difference between each measured temperature value and the average temperature value, and control the adjustment column of the area where each temperature measurement point is located based on the difference.

[0038] Figure 6a A top view showing the distribution of support columns 122 on the support platform 121 is shown. Figure 6b It shows Figure 6a The enlarged diagram at point B in the middle is worth noting. Figure 6a The red dotted line in the image is added for clarity and does not exist in the actual product. For example... Figure 6a and Figure 6b As shown, the support platform 121 is divided into multiple evenly distributed areas, and multiple adjusting columns 125 are evenly distributed in each area, while the support column 122 is located at the center of the corresponding area, and the adjusting columns 125 surround the support column 122.

[0039] The wafer 200 is placed on the support column 122 of the support device 120. The top of the support column 122 supports the wafer 200, creating a gap between the lower surface of the wafer 200 and the upper surface of the support stage 121. The adjustment columns 125 are all in their initial state, i.e., the distance between the top of the adjustment column 125 and the lower surface of the wafer 200 is L1. The first gas inlet assembly 130 provides a reactive gas to the wafer 200 on the support device 120 to form a film layer on the upper surface of the wafer 200; the second gas inlet assembly 140 provides regulating gas from one side of the cavity 110 into the cavity 110, and the regulating gas passes through the gap between the top of the adjustment column 125 and the lower surface of the wafer 200 in a first direction. During the film formation process, the temperature sensor at the top of the support post 122 acquires the temperature of the contact point (temperature measurement point) between the top of the support post 122 and the wafer 200 in real time. The control device (not shown in the figure) acquires the measured temperature values ​​of multiple temperature measurement points on the wafer 200 (i.e., multiple points where the support post 122 contacts the wafer 200), and obtains an average temperature value based on the multiple measured temperature values. Then, the control device acquires the difference between each measured temperature value and the average temperature value, and controls the adjustment post 125 in the area where each temperature measurement point is located based on the difference.

[0040] When the difference between the measured temperature and the average temperature is zero, the temperature at the temperature measurement point where the support column 122 contacts the wafer 200 is suitable, and there is no need to adjust the regulating column 125 in the area where the temperature measurement point is located. When the difference between the measured temperature and the average temperature is greater than zero, the temperature at the temperature measurement point where the support column 122 contacts the wafer 200 is too high. The control device controls at least a portion of the regulating column 125 in the area where the support column 122 is located to descend. The distance between the top of the regulating column 125 and the lower surface of the wafer 200 increases, the flow rate of the regulating gas in the area where the support column 122 is located decreases, and the regulating gas has more time to exchange heat with the wafer 200, thereby reducing the temperature of the surface of the wafer 200. When the difference between the measured temperature value and the average temperature value is less than zero, the temperature at the temperature measurement point where the support column 122 contacts the wafer 200 is too low. The control device controls at least part of the regulating column 125 in the area where the support column is located to rise, the distance between the top of the regulating column 125 and the lower surface of the wafer 200 decreases, the flow rate of the regulating gas in the area where the support column 122 is located increases, the regulating gas passes through the area quickly, thereby reducing the influence of the regulating gas on the temperature of the wafer 200 surface.

[0041] Furthermore, when the difference between the measured temperature value and the average temperature value is greater than zero and less than a first preset value (the first preset value is greater than zero), the control device controls a portion of the adjusting columns 125 in the area where the support column 122 is located to descend, for example, controlling half of the adjusting columns 125 in the area where the support column 122 is located to descend; when the difference between the measured temperature value and the average temperature value is greater than or equal to the first preset value, the control device controls all the adjusting columns 125 in the area where the support column 122 is located to descend. When the difference between the measured temperature value and the average temperature value is less than zero and greater than a second preset value (the second preset value is less than zero), the control device controls a portion of the adjusting columns 125 in the area where the support column 122 is located to rise, for example, controlling half of the adjusting columns 125 in the area where the support column 122 is located to rise; when the difference between the measured temperature value and the average temperature value is less than or equal to the second preset value, the control device controls all the adjusting columns 125 in the area where the support column 122 is located to rise.

[0042] In one embodiment, the first preset value is, for example, 5°C, and the second preset value is, for example, -5°C, but this is not a limitation. This embodiment does not impose any restrictions on the setting of the first preset value and the second preset value.

[0043] Corresponding to the chemical vapor deposition apparatus of the embodiments of this application, the embodiments of this application also provide a temperature control method for the chemical vapor deposition apparatus, including: The measured temperature values ​​of multiple temperature measurement points on the wafer carried on the carrier device are obtained, and the average temperature value is calculated based on the multiple measured temperature values; Calculate the difference between each measured temperature value and the average temperature value; Based on the difference, the adjusting column, which is located inside the support platform of the support device and corresponds to the area where the temperature measurement point is located, is moved up and down to change the distance between the top of the adjusting column and the lower surface of the wafer, thereby adjusting the cooling effect of the regulating gas flowing between the adjusting column and the lower surface of the wafer on the corresponding area of ​​the wafer.

[0044] Controlling the vertical movement of the adjusting column based on the difference includes: When the difference is greater than zero, at least part of the regulating column in the corresponding area is lowered; When the difference is less than zero, at least part of the regulating column in the corresponding area is raised.

[0045] Controlling the descent of at least a portion of the regulating column in the corresponding area includes: When the difference is greater than zero and less than the first preset value, control the lowering of part of the adjustment column in the corresponding area; When the difference is greater than or equal to the first preset value, all adjustment columns in the corresponding area are lowered.

[0046] Controlling the rise of at least a portion of the regulating column in the corresponding area includes: When the difference is less than zero and greater than the second preset value, control the rise of part of the adjustment column in the corresponding area; When the difference is less than or equal to the second preset value, all adjustment columns in the corresponding area are controlled to rise.

[0047] The unexpected technical effect of this application is: In this application, a temperature sensor is installed on the top of the support column to measure the temperature of the wafer surface at multiple points, thereby enabling real-time monitoring of different areas of the wafer.

[0048] Furthermore, this application provides an adjustable column that moves up and down in the support stage. By controlling the rise and fall of the adjustable column, the distance between the top of the adjustable column and the lower surface of the wafer is changed, thereby adjusting the cooling effect of the regulating gas flowing through the gap on the corresponding area of ​​the wafer.

[0049] Furthermore, this application also includes a control device that acquires the measured temperature values ​​of multiple measurement points on the wafer surface, calculates the average value of the multiple measured temperatures, calculates the difference between each measured temperature value and the average temperature value, and controls the raising and lowering of the adjustment column in the area where each temperature measurement point is located based on the difference.

[0050] In a preferred embodiment, the raising and lowering of the adjustment column is controlled in different zones according to the real-time temperature of different temperature measurement points, so as to achieve precise control of the wafer surface temperature.

[0051] In a preferred embodiment, the amount by which the regulating column rises or falls is controlled according to the magnitude of the difference, thereby controlling the degree of temperature regulation.

[0052] As described above, these embodiments of this application do not exhaustively cover all details, nor do they limit the application to merely the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A chemical vapor deposition apparatus, characterized in that, include: cavity; A support device, disposed inside the cavity, is used to support the wafer; The first gas inlet assembly is disposed above the support device and is used to supply reaction gas to the wafer; The second air intake assembly is disposed on one side of the cavity and is used to provide regulating gas into the cavity; The supporting device includes: Support platform; A support column, located on the surface of the support platform, is used to support the wafer so that a gap is formed between the wafer and the surface of the support platform; A heater is disposed inside the support platform; An adjustment column is disposed inside the support stage and can move up and down relative to the surface of the support stage to change the distance between its top and the lower surface of the wafer; A driving device is used to drive the adjusting column to move up and down; and The control device is configured to: acquire measured temperature values ​​at multiple temperature measurement points on the wafer and obtain an average temperature value based on the multiple measured temperature values; and control the drive device in the region corresponding to each measured temperature value and the average temperature value to adjust the movement of the adjustment column.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The temperature measurement point is located at the top of the support column; the support column is made of insulating material; the support column is tapered, narrower at the top and wider at the bottom.

3. The chemical vapor deposition apparatus according to claim 1, characterized in that, The support platform is divided into multiple areas, each area is provided with the support column, and each area is provided with one or more adjustment columns surrounding the corresponding support column.

4. The chemical vapor deposition apparatus according to claim 1, characterized in that, The control device is further configured to: When the difference is greater than zero, the drive device controlling the corresponding area drives at least a portion of the adjusting column to descend; When the difference is less than zero, the drive device controlling the corresponding area drives at least a portion of the adjusting column to rise.

5. The chemical vapor deposition apparatus according to claim 1, characterized in that, The control device is further configured to: When the difference is greater than zero and less than the first preset value, the adjustment column in the corresponding area is controlled to descend. When the difference is greater than or equal to the first preset value, all the adjustment columns in the corresponding area are controlled to descend.

6. The chemical vapor deposition apparatus according to claim 1, characterized in that, The control device is further configured to: When the difference is less than zero and greater than the second preset value, the adjustment column in the corresponding area is controlled to rise. When the difference is less than or equal to the second preset value, all the adjustment columns in the corresponding area are controlled to rise.

7. A temperature control method for a chemical vapor deposition (CVD) apparatus, characterized in that, include: The measured temperature values ​​of multiple temperature measurement points on the wafer carried on the carrier device are obtained, and the average temperature value is calculated based on the multiple measured temperature values; Calculate the difference between each measured temperature value and the average temperature value; Based on the difference, the adjusting column, which is located inside the support platform of the support device and corresponds to the area where the temperature measurement point is located, is controlled to move up and down to change the distance between the top of the adjusting column and the lower surface of the wafer, thereby adjusting the cooling effect of the regulating gas flowing through the gap between the adjusting column and the lower surface of the wafer on the corresponding area of ​​the wafer.

8. The temperature control method according to claim 7, characterized in that, Controlling the vertical movement of the adjusting column based on the difference includes: When the difference is greater than zero, at least a portion of the regulating column in the corresponding region is lowered; When the difference is less than zero, at least a portion of the regulating column in the corresponding region is raised.

9. The temperature control method according to claim 8, characterized in that, Controlling the descent of at least a portion of the regulating column in the corresponding region includes: When the difference is greater than zero and less than the first preset value, the adjustment column in the corresponding area is controlled to descend. When the difference is greater than or equal to the first preset value, all the adjustment columns in the corresponding area are controlled to descend.

10. The temperature control method according to claim 8, characterized in that, Controlling the rise of at least a portion of the regulating column in the corresponding area includes: When the difference is less than zero and greater than the second preset value, the adjustment column in the corresponding area is controlled to rise. When the difference is less than or equal to the second preset value, all the adjustment columns in the corresponding area are controlled to rise.

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