Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel, a preparation method thereof and a display device. The preparation method of the display panel comprises the following steps: preparing a substrate; forming an isolation structure on one side of the substrate, wherein the isolation structure is enclosed to form a plurality of isolation openings; and forming a light-emitting device on one side of the substrate, wherein the light-emitting device comprises a first light-emitting device and a second light-emitting device. And before the first light-emitting device is prepared, forming a first protection layer in a part of the isolation opening. And before the second light-emitting device is prepared, the first protection layer is removed. According to the invention, the protection layer is arranged to protect the protection layers of other opening structures and other light-emitting devices, so that the influence of a subsequent process on other structures is prevented, and the problem of pixel dark spots is solved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel, its manufacturing method, and a display device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are organic thin-film electroluminescent devices. They have attracted great attention and are widely used in electronic display products due to their advantages such as low power consumption, high brightness, wide viewing angle, high contrast, and the ability to realize flexible displays.

[0003] However, current display panels are prone to pixel dark spots during use. Summary of the Invention

[0004] The purpose of this invention is to provide a display panel and its manufacturing method, as well as a display device, to solve the technical problem that existing display panels are prone to pixel dark spots during use.

[0005] To achieve the above objectives, the present invention provides a method for manufacturing a display panel, comprising: preparing a substrate; forming an isolation structure on one side of the substrate, the isolation structure enclosing a plurality of isolation openings; and forming a light-emitting device on one side of the substrate, the light-emitting device including a first light-emitting device and a second light-emitting device.

[0006] Before fabricating the first light-emitting device, a first protective layer is formed in a portion of the isolation opening. Before fabricating the second light-emitting device, at least a portion of the first protective layer is removed.

[0007] Furthermore, the method for manufacturing the display panel further includes forming an encapsulation layer on the side of the light-emitting device facing away from the substrate. Preferably, the encapsulation layer is prepared using an atomic layer deposition process.

[0008] Furthermore, the light-emitting device further includes a third light-emitting device, and the isolation opening includes a first opening, a second opening, and a third opening. The step of fabricating the light-emitting device on one side of the substrate includes: fabricating the first light-emitting device in the first opening; fabricating the second light-emitting device in the second opening; and fabricating the third light-emitting device in the third opening.

[0009] Preferably, before the step of fabricating the first light-emitting device in the first opening, the method includes: forming the first protective layer in the second opening and the third opening. Preferably, before the step of fabricating the second light-emitting device in the second opening, the method includes: forming a second protective layer in the side of the encapsulation layer away from the substrate and in the third opening; or, removing the first protective layer in the second opening, retaining the first protective layer in the third opening, and forming a second protective layer corresponding to the first light-emitting device on the side of the encapsulation layer away from the substrate. Preferably, before the step of fabricating the second light-emitting device in the second opening, the method includes: removing the second protective layer. Preferably, before the step of fabricating the third light-emitting device in the third opening, the method further includes: forming a third protective layer on the side of the first light-emitting device and the second light-emitting device away from the substrate; or, removing the first protective layer or the second protective layer in the third opening, retaining the second protective layer corresponding to the first light-emitting device, and forming a third protective layer corresponding to the second light-emitting device on the side of the encapsulation layer away from the substrate. Preferably, after the step of fabricating the third light-emitting device in the third opening, the method includes: removing the third protective layer.

[0010] Furthermore, the distance between the end of the first protective layer, the second protective layer, and the third protective layer that is away from the substrate and the substrate is greater than the distance between the end of the isolation structure that is away from the substrate and the substrate.

[0011] Furthermore, the materials of the first protective layer, the second protective layer, and the third protective layer include organic materials. Preferably, the materials of the first protective layer, the second protective layer, and the third protective layer include photoresist.

[0012] Further, the step of forming the encapsulation layer on the side of the light-emitting device facing away from the substrate includes: forming a first encapsulation portion on the side of the first light-emitting device facing away from the substrate; forming a second encapsulation portion on the side of the second light-emitting device facing away from the substrate; and forming a third encapsulation portion on the side of the third light-emitting device facing away from the substrate. Preferably, the material of the encapsulation layer includes at least one of inorganic materials and metal oxides. Preferably, the material of the encapsulation layer includes at least one of silicon oxide, silicon nitride, or metal oxide.

[0013] Furthermore, the step of forming a first encapsulation portion on the side of the first light-emitting device away from the substrate includes: forming a first material layer on the side of the first light-emitting device away from the substrate before removing the first protective layer; removing the first material layer corresponding to the second opening and the third opening to form the first encapsulation portion.

[0014] The step of forming a second package portion on the side of the second light-emitting device away from the substrate includes: forming a second material layer on the side of the second light-emitting device away from the substrate before removing the second protective layer; removing the second material layer corresponding to the first opening and the third opening to form the second package portion.

[0015] The step of forming a third encapsulation portion on the side of the third light-emitting device away from the substrate includes: forming a third material layer on the side of the third light-emitting device away from the substrate; removing the third material layer corresponding to the first opening and the second opening to form the third encapsulation portion.

[0016] Furthermore, the step of forming a first package portion on the side of the first light-emitting device away from the substrate further includes: before the step of removing the first material layer corresponding to the second opening and the third opening, forming a first photolithography layer on the side of the first material layer away from the substrate, the first photolithography layer corresponding to the first opening; and removing the first material layer and the first light-emitting device not covered by the first photolithography layer by an etching process.

[0017] The step of forming a second package portion on the side of the second light-emitting device away from the substrate further includes: before the step of removing the second material layer corresponding to the first opening and the third opening, forming a second photolithography layer on the side of the second material layer away from the substrate, the second photolithography layer corresponding to the second opening; and removing the second material layer and the second light-emitting device not covered by the second photolithography layer by an etching process.

[0018] The step of forming a third package portion on the side of the third light-emitting device away from the substrate further includes: before the step of removing the third material layer corresponding to the first opening and the second opening, forming a third photolithography layer on the side of the third material layer away from the substrate, the third photolithography layer corresponding to the third opening; and removing the third material layer and the third light-emitting device not covered by the third photolithography layer by an etching process.

[0019] Further, the step of removing the first protective layer includes: removing the first protective layer and the first photolithography layer by an ashing process and / or a stripping process. The step of removing the second protective layer includes: removing the second protective layer and the second photolithography layer by an ashing process and / or a stripping process. The step of removing the third protective layer includes: removing the third protective layer and the third photolithography layer by an ashing process and / or a stripping process.

[0020] Furthermore, the materials of the first light-emitting device, the second light-emitting device, and the third light-emitting device are at least partially different. Preferably, the wavelength of light emitted by the first light-emitting device is greater than the wavelength of light emitted by the second light-emitting device. Preferably, the wavelength of light emitted by the second light-emitting device is greater than the wavelength of light emitted by the third light-emitting device.

[0021] Furthermore, before the step of forming an isolation structure on one side of the substrate, the method further includes: forming a first electrode layer on one side of the substrate, the first electrode layer including a plurality of first electrodes; forming a pixel defining layer on one side of the substrate, the pixel defining layer covering the first electrode layer, the pixel defining layer including a plurality of pixel openings, the pixel openings corresponding to the first electrodes.

[0022] The present invention also provides a display panel, which is manufactured using the display panel manufacturing method described above.

[0023] The present invention also provides a display device, the display device comprising the display panel as described above.

[0024] The advantages of this invention are: In the display panel and its manufacturing method provided by this invention, a protective layer is first formed to protect other opening structures and other light-emitting devices before the corresponding light-emitting devices are manufactured, thereby reducing the impact of subsequent processes such as etching on other opening structures and light-emitting devices, thus solving the problem of pixel dark spots that are easy to occur in existing display panels during use, and thus improving the display effect of the display panel. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the layered structure of the display panel in an embodiment of the present invention;

[0027] Figure 2 This is a schematic flowchart of the display panel manufacturing method in an embodiment of the present invention;

[0028] Figure 3 This is a flowchart illustrating steps S51-S56 in an embodiment of the present invention.

[0029] Figure 4 This is a schematic diagram of the panel layer structure after the first protective layer is formed in step S51 of this embodiment of the invention;

[0030] Figure 5 This is a schematic diagram of the panel layer structure after the formation of the first light-emitting device and the first material layer in step S52 of this embodiment of the invention;

[0031] Figure 6 This is a schematic diagram of the panel layer structure after removing the first light-emitting device and the first material layer not covered by the first photolithography layer in step S52 of this embodiment of the invention;

[0032] Figure 7 This is a schematic diagram of the panel layer structure after removing the first photoresist and the first protective layer in step S52 of this embodiment of the invention;

[0033] Figure 8 This is a schematic diagram of the panel layer structure after the second protective layer is formed in step S53 of this embodiment of the invention;

[0034] Figure 9 This is a schematic diagram of the panel layer structure after the formation of the second light-emitting device and the second material layer in step S54 of this embodiment of the invention;

[0035] Figure 10 This is a schematic diagram of the panel layer structure after removing the second light-emitting device and the second material layer that are not covered by the second photolithography layer in step S54 of this embodiment of the invention.

[0036] Figure 11 This is a schematic diagram of the panel layer structure after removing the second photoresist and the first protective layer in step S54 of this embodiment of the invention.

[0037] Figure 12 This is a schematic diagram of the panel layer structure after the third protective layer is formed in step S55 of this embodiment of the invention;

[0038] Figure 13 This is a schematic diagram of the panel layer structure after the formation of the third light-emitting device and the third material layer in step S56 of this embodiment of the invention;

[0039] Figure 14 This is a schematic diagram of the panel layer structure after removing the third light-emitting device and the third material layer that are not covered by the third photolithography layer in step S56 of this embodiment of the invention.

[0040] The components in the diagram are shown below:

[0041] Display panel 1; Substrate 10;

[0042] Pixel confinement layer 11; Pixel opening 12;

[0043] Light-emitting device 20; First light-emitting device 20R;

[0044] Second light-emitting device 20G; Third light-emitting device 20B;

[0045] First electrode 21; Light-emitting layer 22;

[0046] Second electrode 23; Isolation structure 30;

[0047] Support part 31; Blocking part 32;

[0048] Isolation opening 33; First opening 331;

[0049] Second opening 332; Third opening 333;

[0050] Encapsulation layer 40; First encapsulation part 41;

[0051] First material layer 41'; Second encapsulation part 42;

[0052] Second material layer 42'; Third encapsulation part 43;

[0053] Third material layer 43'; First protective layer 51;

[0054] Second protective layer 52; Third protective layer 53;

[0055] First photolithography layer 61; Second photolithography layer 62;

[0056] Third photolithography layer 63. Detailed Implementation

[0057] The following description, with reference to the accompanying drawings, illustrates preferred embodiments of the present invention, demonstrating its implementability. These embodiments provide a complete overview of the invention for those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the scope of protection of the present invention is not limited to the embodiments mentioned herein.

[0058] In the accompanying drawings, components with the same structure are indicated by the same numerical designation, and components with similar structures or functions are indicated by similar numerical designations. The dimensions and thicknesses of each component shown in the drawings are arbitrary, and the present invention does not limit the dimensions and thicknesses of each component. To make the illustrations clearer, the thickness of components is appropriately exaggerated in some places in the drawings.

[0059] Furthermore, the following descriptions of the embodiments of the invention are made with reference to the accompanying illustrations, illustrating specific embodiments in which the invention can be implemented. Directional terms used in this invention, such as "upper," "lower," "front," "rear," "left," "right," "inner," "outer," and "side," are merely directional references to the accompanying drawings. Therefore, the use of directional terms is for better and clearer explanation and understanding of the invention, and does not indicate or imply that the referred device or element must have a specific orientation, or be constructed and operated in a specific orientation; therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0060] When a component is described as being "on" another component, the component may be placed directly on the other component; alternatively, there may be an intermediate component on which the component is placed, and the intermediate component is placed on the other component. When a component is described as being "installed to" or "connected to" another component, both can be understood as being directly "installed" or "connected" to, or as being indirectly "installed to" or "connected to" another component via an intermediate component.

[0061] In related display technologies, to achieve high resolution and color in OLED (Organic Light-Emitting Diode) devices, and to better address issues such as low resolution of the OLED cathode film and low device yield, a cathode isolation structure has been introduced. This involves creating an isolation structure on the driving layer before depositing the organic thin film and metal cathode, instead of using a metal mask during device fabrication. This isolation structure separates different pixels, forming a pixel array. However, the inventors discovered in actual production that due to the limited quality and protective capabilities of the encapsulation layer, it is prone to breakage and damage during subsequent production processes, easily resulting in pixel dark spots and affecting the display panel's performance.

[0062] Based on the technical problems discovered in the aforementioned related display technologies, this embodiment of the invention provides a display panel 1, such as... Figure 1As shown, the display panel 1 includes a substrate 10, multiple light-emitting devices 20, and an isolation structure 30. The substrate 10 drives the light-emitting devices 20. The isolation structure 30 is disposed on one side of the substrate 10 and encloses multiple isolation openings 33, which block vapor-deposited materials and disconnect the vapor-deposited materials in adjacent isolation openings 33, thereby isolating the multiple light-emitting devices 20. At least a portion of each light-emitting device is disposed within a corresponding isolation opening 33. Each light-emitting device 20, as an independent light-emitting unit, can be turned on or off according to a corresponding display signal under the drive of the substrate 10. (The composition and preparation of the isolation structure 30 mentioned below are specified in patents CN118251982A, 202410864269.8, PCT / CN2024 / 098407, PCT / CN2024 / 102783, PCT / CN2024 / 098217, PCT / CN2024 / 099419, and PCT / CN2024 / 099072.) Further descriptions can be found in CN117979755A, CN117998900A, CN117062489A, CN117580403A, CN116583155A, CN116669477A, ​​CN117396039A, CN116669480A, CN116600606A, and CN117500332A for reference.

[0063] The substrate 10 is an array substrate, comprising multiple thin-film transistors arranged in an array, with each light-emitting device 20 electrically connected to at least one thin-film transistor. The substrate 10 also includes signal traces, one end of which is electrically connected to a driver chip, and the other end to a thin-film transistor. The driver chip transmits display signals to the corresponding thin-film transistors via the signal traces. The thin-film transistors then activate the corresponding light-emitting devices 20 according to the display signals, thereby illuminating the light-emitting devices 20 at the corresponding positions and forming an image. Simultaneously, the driver chip can also change the displayed image by sending different display signals.

[0064] The display panel 1 also includes a pixel defining layer 11 disposed on one side of the substrate 10. The pixel defining layer 11 has a plurality of pixel openings 12, and at least a portion of the light-emitting device 20 is disposed in the pixel openings 12. An isolation structure 30 is disposed on the side of the pixel defining layer 11 facing away from the substrate 10, and the isolation opening 33 formed by the isolation structure 30 communicates with the corresponding pixel opening 12, so that the material in the light-emitting device 20 can be deposited in the corresponding pixel opening 12.

[0065] The light-emitting device 20 includes a first light-emitting device 20R, a second light-emitting device 20G, and a third light-emitting device 20B capable of emitting different colors. The wavelength of light emitted by the first light-emitting device 20R is longer than that emitted by the second light-emitting device 20G, and the wavelength of light emitted by the second light-emitting device 20G is longer than that emitted by the third light-emitting device 20B. Specifically, the first light-emitting device 20R emits red light, the second light-emitting device 20G emits green light, and the third light-emitting device 20B emits blue light. By using light-emitting devices 20 capable of emitting different colors, color image display is achieved.

[0066] Specifically, each light-emitting device 20 includes a first electrode 21, a light-emitting layer 22, and a second electrode 23. The first electrode 21 is disposed between the substrate 10 and the pixel defining layer 11, and at least a portion of the surface of the first electrode 21 is exposed in the corresponding pixel opening 12. The light-emitting layer 22 is disposed in the corresponding pixel opening 12 and covers the exposed surface of the first electrode 21 in the corresponding pixel opening 12. The second electrode 23 is stacked on the side of the light-emitting layer 22 facing away from the substrate 10 and extends from the surface of the light-emitting layer 22 facing away from the substrate 10 to the surface of the isolation structure 30 facing the isolation opening 33, thereby connecting the second electrode 23 with the isolation structure 30. To enable different light-emitting devices 20 to emit different colors of light, the materials of the light-emitting layers 52 in different light-emitting devices 20 are at least partially different. For example, the light-emitting layer of the first light-emitting device 20R contains a fluorescent material that emits red light, the light-emitting layer of the second light-emitting device 20G contains a fluorescent material that emits green light, and the light-emitting layer of the third light-emitting device 20B contains a fluorescent material that emits blue light.

[0067] The isolation structure 30 includes a support portion 31 and a blocking portion 32, which surround the pixel opening 12. The support portion 31 is disposed on the side of the pixel limiting layer 11 facing away from the substrate 10, and the blocking portion 32 is stacked on the side of the support portion 31 facing away from the substrate 10. The materials of the support portion 31 and the blocking portion 32 include conductive materials; preferably, the material of the support portion 31 can be aluminum, and the material of the blocking portion 32 can be titanium. The second electrode 23 extends from the surface of the light-emitting layer 22 facing away from the substrate 10 to the sidewall of the support portion 31, thereby facilitating an electrical connection between the second electrode 23 and the support portion 31. The second electrode 23 can obtain the VSS power signal through the support portion 31. The cross-sectional profile of the support portion 31 located between two adjacent pixel openings 12 is trapezoidal, and the width of the support portion 31 near the blocking portion 32 is smaller than its width near the substrate 10, to facilitate the climbing of the second electrode 23 and reduce the difficulty of overlapping between the second electrode 23 and the support portion 31.

[0068] Specifically, the orthographic projection of the blocking portion 32 on the substrate 10 covers the orthographic projection of the supporting portion 31 on the substrate 10, and the orthographic projection area of ​​the blocking portion 32 on the substrate 10 is larger than the orthographic projection area of ​​the supporting portion 31 on the substrate 10. This causes the blocking portion 32 to protrude from the supporting portion 31 at one end toward the isolation opening 33, so that the blocking portion 32 can completely block the supporting portion 31. This prevents the material of the light-emitting layer 22 from being deposited onto the supporting portion 31 when the light-emitting layer 22 is prepared. When the second electrode 23 is prepared, the deposition angle can be adjusted so that the coverage area of ​​the second electrode 23 is larger than the coverage area of ​​the light-emitting layer 22, so that the second electrode 23 can extend from the surface of the light-emitting layer 22 to cover the side wall of the supporting portion 31, thereby improving the overlap yield between the second electrode 23 and the supporting portion 31.

[0069] The display panel 1 also includes an encapsulation layer 40, which is disposed on the side of the light-emitting device 20 facing away from the substrate 10. The encapsulation layer 40 includes a first encapsulation portion 41, a second encapsulation portion 42, and a third encapsulation portion 43. The first encapsulation portion 41 is located on the side of the first light-emitting device 20R facing away from the substrate 10, the second encapsulation portion 42 is located on the side of the second light-emitting device 20G facing away from the substrate 10, and the third encapsulation portion 43 is located on the side of the third light-emitting device 20B facing away from the substrate 10. Each encapsulation portion covers the surface of the corresponding light-emitting device facing away from the substrate 10 and extends from the light-emitting device to cover the sidewall of the isolation structure 30 and a portion of the surface of the isolation structure 30 facing away from the substrate 10, overlapping with the side of the blocking portion 32 facing away from the substrate 10. The first encapsulation portion 41, the second encapsulation portion 42, and the third encapsulation portion 43 are made of the same material, each using at least one of inorganic materials and metal oxide materials. For example, the material of the encapsulation layer 20 includes at least one of silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide. The encapsulation layer 40 is used to encapsulate and protect the light-emitting device 20 and other electronic components in the display panel 1, preventing water and oxygen from entering and corroding the light-emitting device 20.

[0070] This invention also provides a method for manufacturing a display panel, for manufacturing the display panel 1 as described above. The process of manufacturing the display panel 1 is as follows: Figure 2 As shown, it includes steps S10-S50.

[0071] Step S10) Fabrication of substrate 10:

[0072] A substrate 10 containing multiple thin-film transistors and signal traces is formed using an array process.

[0073] Step S20) Forming a first electrode layer on one side of the substrate 10:

[0074] At least one layer of conductive material is deposited on the surface of substrate 10 to form a first electrode layer; the first electrode layer is patterned by a patterning process to form a plurality of first electrodes 21.

[0075] Step S30) A pixel defining layer 11 is formed on one side of the substrate 10:

[0076] An organic or inorganic material covering the first electrode layer is deposited on one side of the substrate 10 to form a pixel defining layer 11; the pixel defining layer 11 is patterned, and part of the pixel defining layer 11 covering the first electrode 21 is removed to form a pixel opening 12 in the pixel defining layer 11, and part of the surface of the first electrode 21 is exposed in the corresponding pixel opening 12.

[0077] Step S40) An isolation structure 30 is formed on one side of the substrate 10:

[0078] At least two conductive materials are sequentially deposited on the side of the pixel limiting layer 11 away from the substrate 10. For example, a layer of aluminum is deposited first, and a layer of titanium is deposited on the side of the aluminum film layer away from the pixel limiting layer 11 to form a support material layer and a barrier material layer. The barrier material layer and the support material layer are sequentially patterned, and a portion of the conductive material above the first electrode 21 is removed to form an isolation opening 33 that penetrates the support material layer and the barrier material layer. The remaining support material layer and barrier material layer form a support portion 31 and a barrier portion 32. The barrier portion 32 protrudes from the support portion 31 toward the isolation opening 33.

[0079] Step S50) A light-emitting device 20 is formed on one side of the substrate 10, and an encapsulation layer 40 is formed on the side of the light-emitting device 20 facing away from the substrate 10:

[0080] The isolation opening formed in step S40 includes a first opening 331, a second opening 332, and a third opening 333. A first light-emitting device 20R is formed in the first opening 331, and a first encapsulation portion 41 is formed on the side of the first light-emitting device 20R facing away from the substrate. A second light-emitting device 20G is formed in the second opening 332, and a second encapsulation portion 42 is formed on the side of the second light-emitting device 20G facing away from the substrate. A third light-emitting device 20B is formed in the third opening 333, and a third encapsulation portion 43 is formed on the side of the third light-emitting device 20B facing away from the substrate, thereby forming... Figure 1 The display panel 1 shown is shown.

[0081] Specifically, step S50 includes steps S51-S56, and the process is as follows: Figure 3 As shown in the image.

[0082] Step S51) Forming a first protective layer 51 in the first opening 331:

[0083] An organic material, such as photoresist (OC resist), is coated on one side of the substrate 10, and the photoresist layer is patterned. The photoresist in the first opening 331 is removed, exposing the first opening 331 and the pixel opening 12 connected to the first opening 331, forming a structure as shown in the image. Figure 4 The first protective layer 51 shown fills and protects the second opening 332 and the third opening 333; wherein, photoresist fills all the isolation openings 33 and covers the exposed surface of the isolation structure 30, thereby causing the distance between the end of the first protective layer 51 away from the substrate 10 and the substrate 10 to be greater than the distance between the end of the isolation structure 30 away from the substrate 10 and the substrate 10.

[0084] Step S52) A first light-emitting device 20R is formed in the first opening 331, and a first encapsulation portion 41 is formed on the side of the first light-emitting device 20R facing away from the substrate 10:

[0085] An organic light-emitting material containing red phosphor is deposited in the pixel opening 12 communicating with the first opening 331, covering the exposed surface of the first electrode 21, to form a light-emitting layer 22; a metal material is deposited on the side of the light-emitting layer 22 away from the first electrode 21, and by adjusting the evaporation angle, the metal material is extended from the surface of the light-emitting layer 22 to the sidewall of the support portion 31 facing the isolation opening 34, forming a second electrode 23; the first electrode 21 corresponding to the first opening 331, together with the light-emitting layer 22 and the second electrode 23 prepared in this step, forms a first light-emitting device 20R; an encapsulation material is deposited on the side of the first light-emitting device 20R away from the substrate 10 to form a first material layer 41', forming as shown in the image. Figure 5 The panel structure shown;

[0086] A layer of photoresist is coated on the side of the first material layer 41' facing away from the substrate 10, and the photoresist layer is patterned by an etching process to form a first photolithography layer 61 corresponding to the first opening 331. The first photolithography layer 61 is used to protect the first light-emitting device 20R and the first package portion 41. According to the pattern of the first photolithography layer 61, the first material layer 41', the second electrode, and the light-emitting layer not covered by the first photolithography layer 61 are removed sequentially by an etching process to form a layer as shown in the image. Figure 6 The first light-emitting device 20R and the first package 41 are shown in the figure;

[0087] The first photolithographic layer 61 is removed by at least one of an ashing process and a stripping process; simultaneously, since the material of the first protective layer 51 is similar to that of the first photolithographic layer 61 (both are organic materials), the first protective layer 51 can be removed simultaneously when the first photolithographic layer 61 is removed, forming a structure as shown below. Figure 7The panel structure shown is illustrated. In other embodiments of the invention, only a portion of the first protective layer 51 may be removed, i.e., the first protective layer 51 in the second opening 332 may be removed, while the first protective layer 51 located in the third opening 333 may be retained.

[0088] Step S53) Forming a second protective layer 52 in the second opening 332:

[0089] An organic material, such as photoresist (OC resist), is coated on one side of the substrate 10, and the photoresist layer is patterned. The photoresist in the second opening 332 is removed, exposing the second opening 332 and the pixel opening 12 connected to the second opening 332, forming a structure as shown in the image. Figure 8 The second protective layer 52 shown fills and protects the first opening 331 and the third opening 333; wherein, photoresist fills all the isolation openings 33 and covers the exposed surface of the isolation structure 30, thereby causing the distance between the end of the second protective layer 52 facing away from the substrate 10 and the substrate 10 to be greater than the distance between the end of the isolation structure 30 facing away from the substrate 10 and the substrate 10. In other embodiments of the present invention, the second protective layer 52 corresponding to the first light-emitting device 20R can also be formed on the side of the first package portion 41 facing away from the substrate 10 by the same preparation method.

[0090] Step S54) A second light-emitting device 20G is formed in the second opening 332, and a second encapsulation portion 42 is formed on the side of the second light-emitting device 20G facing away from the substrate 10:

[0091] An organic light-emitting material containing green phosphor is deposited in the pixel opening 12 communicating with the second opening 332, covering the exposed surface of the first electrode 21, to form a light-emitting layer 22; a metal material is deposited on the side of the light-emitting layer 22 away from the first electrode 21, and by adjusting the evaporation angle, the metal material is extended from the surface of the light-emitting layer 22 to the sidewall of the support portion 31 facing the isolation opening 34, forming a second electrode 23; the first electrode 21 corresponding to the second opening 332, together with the light-emitting layer 22 and the second electrode 23 prepared in this step, forms a second light-emitting device 20G; an encapsulation material is deposited on the side of the second light-emitting device 20G away from the substrate 10 to form a second material layer 42', forming as shown in the image. Figure 9 The panel structure shown;

[0092] A layer of photoresist is coated on the side of the second material layer 42' facing away from the substrate 10, and the photoresist layer is patterned by an etching process to form a second photolithography layer 62 corresponding to the second opening 332. The second photolithography layer 62 is used to protect the second light-emitting device 20G and the second packaging part 42. According to the pattern of the second photolithography layer 62, the second material layer 42', the second electrode and the light-emitting layer not covered by the second photolithography layer 62 are removed sequentially by an etching process to form a layer as shown in the figure. Figure 10The second light-emitting device 20G and the second packaging part 42 are shown in the figure;

[0093] The second photolithographic layer 62 is removed by at least one of an ashing process and a stripping process; simultaneously, since the material of the second protective layer 52 is similar to that of the second photolithographic layer 62 (both are organic materials), the second protective layer 52 can be removed simultaneously when the second photolithographic layer 62 is removed, forming a structure as shown in the image. Figure 11 The panel structure shown is illustrated. In other embodiments of the invention, a portion of the second protective layer 52 or the first protective layer 51 may be removed, i.e., the first protective layer 51 or the second protective layer 52 located in the third opening 333 may be removed, while the second protective layer 52 corresponding to the first light-emitting device 20R remains.

[0094] Step S55) Forming a third protective layer 53 in the third opening 333:

[0095] An organic material, such as photoresist (OC resist), is coated on one side of the substrate 10, and the photoresist layer is patterned. The photoresist in the third opening 333 is removed, exposing the third opening 333 and the pixel opening 12 connected to the third opening 333, forming a structure as shown in the image. Figure 12 The third protective layer 53 shown fills and protects the first opening 331 and the second opening 332; wherein, photoresist fills all the isolation openings 33 and covers the exposed surface of the isolation structure 30, thereby causing the distance between the end of the third protective layer 53 facing away from the substrate 10 and the substrate 10 to be greater than the distance between the end of the isolation structure 30 facing away from the substrate 10 and the substrate 10. In other embodiments of the present invention, the third protective layer 53 corresponding to the second light-emitting device 20G can also be formed on the side of the second packaging portion 42 facing away from the substrate 10 by the same preparation method.

[0096] Step S56) A second light-emitting device 20G is formed in the third opening 333, and a third encapsulation portion 43 is formed on the side of the second light-emitting device 20G facing away from the substrate 10:

[0097] An organic light-emitting material containing green phosphor is deposited in the pixel opening 12, which communicates with the third opening 333, covering the exposed surface of the first electrode 21, to form a light-emitting layer 22. A metal material is deposited on the side of the light-emitting layer 22 away from the first electrode 21, and by adjusting the evaporation angle, the metal material is extended from the surface of the light-emitting layer 22 to the sidewall of the support portion 31 facing the isolation opening 34, forming a second electrode 23. The first electrode 21 corresponding to the third opening 333, together with the light-emitting layer 22 and the second electrode 23 prepared in this step, forms a third light-emitting device 20B. An encapsulation material is deposited on the side of the second light-emitting device 20B away from the substrate 10 to form a third material layer 43', forming a layer as shown in the image. Figure 13 The panel structure shown;

[0098] A photoresist layer is coated on the side of the third material layer 43' facing away from the substrate 10, and the photoresist layer is patterned by an etching process to form a third photolithography layer 63 corresponding to the third opening 333. This third photolithography layer 63 is used to protect the third light-emitting device 20B and the third package portion 43. According to the pattern of the third photolithography layer 63, the third material layer 43', the second electrode, and the light-emitting layer not covered by the third photolithography layer 63 are removed sequentially by an etching process to form a structure as shown in the image. Figure 14 The third light-emitting device 20B and the third package 43 shown are illustrated.

[0099] The third photolithography layer 63 is removed by at least one of an ashing process and a stripping process; simultaneously, since the material of the third protective layer 53 is similar to that of the third photolithography layer 63 (both are organic materials), the third protective layer 53 and other residual protective layers (e.g., the second protective layer 52 corresponding to the first light-emitting device 20R) can be removed simultaneously when removing the third photolithography layer 63, forming a layer as shown in the image. Figure 1 The display panel shown.

[0100] Furthermore, the first material layer 41', the second material layer 42', and the third material layer 43' formed in steps 52, 53, and 56 can be prepared by atomic layer deposition (ALD) process. That is, the first encapsulation part 41, the second encapsulation part 42, and the third encapsulation part 43 can all be prepared by atomic layer deposition (ALD) process. Compared with the encapsulation film layer prepared by chemical vapor deposition (CVD) process used in related display technologies, the encapsulation layer 40 prepared in the embodiment of the present invention has better coverage and etching resistance, thereby playing a role in dense protection. Moreover, the film layer thickness can be adjusted according to the etching conditions.

[0101] This invention also provides a display device, which can be an OLED display device, including a display panel 1 as described above, the display panel 1 being used to display image information for the display device. The display device can be any display device with display functionality, such as a mobile phone, laptop computer, tablet computer, etc.

[0102] In this embodiment of the invention, by forming a first protective layer, a second protective layer, and a third protective layer to protect other opening structures and other light-emitting devices before fabricating the corresponding light-emitting devices, the influence of subsequent processes such as etching on other opening structures and light-emitting devices is reduced, and over-etching of the encapsulation layer is prevented. This solves the problem of pixel dark spots caused by over-etching and breakage of the encapsulation layer, thereby improving the display effect of the display panel.

[0103] While the invention has been described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the invention. Therefore, it should be understood that many modifications can be made to the exemplary embodiments, and other arrangements can be designed without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood that different dependent claims and features described herein can be combined in ways different from those described in the original claims. It is also understood that features described in conjunction with individual embodiments can be used in other described embodiments.

Claims

1. A method for manufacturing a display panel, characterized in that, include: Preparing a substrate; An isolation structure is formed on one side of the substrate, and the isolation structure encloses a plurality of isolation openings; A light-emitting device is formed on one side of the substrate, the light-emitting device including a first light-emitting device and a second light-emitting device; Before fabricating the first light-emitting device, a first protective layer is formed in a portion of the isolation opening; Before fabricating the second light-emitting device, at least a portion of the first protective layer is removed.

2. The method for manufacturing a display panel as described in claim 1, characterized in that, Also includes: An encapsulation layer is formed on the side of the light-emitting device that is away from the substrate; Preferably, the encapsulation layer is prepared using an atomic layer deposition process.

3. The method for manufacturing a display panel as described in claim 2, characterized in that, The light-emitting device further includes a third light-emitting device, and the isolation opening includes a first opening, a second opening, and a third opening; The step of fabricating a light-emitting device on one side of the substrate includes: The first light-emitting device is fabricated in the first opening; The second light-emitting device is fabricated in the second opening; The third light-emitting device is fabricated in the third opening; Preferably, the step of fabricating the first light-emitting device in the first opening includes: forming the first protective layer in the second opening and the third opening; Preferably, before the step of fabricating the second light-emitting device in the second opening, the method includes: forming a second protective layer in the side of the encapsulation layer opposite to the substrate and in the third opening; or, Remove the first protective layer in the second opening, retain the first protective layer in the third opening, and form a second protective layer corresponding to the first light-emitting device on the side of the encapsulation layer away from the substrate; Preferably, the step of fabricating the second light-emitting device in the second opening includes: removing the second protective layer; Preferably, before the step of fabricating the third light-emitting device in the third opening, the method further includes: forming a third protective layer on the side of the encapsulation layer facing away from the substrate; or, Remove the first protective layer or the second protective layer located in the third opening, retain the second protective layer corresponding to the first light-emitting device, and form a third protective layer corresponding to the second light-emitting device on the side of the encapsulation layer away from the substrate; Preferably, the step of fabricating the third light-emitting device in the third opening includes removing the third protective layer.

4. The method for manufacturing a display panel as described in claim 3, characterized in that, The distance between the end of the first protective layer, the second protective layer, and the third protective layer that is away from the substrate and the substrate is greater than the distance between the end of the isolation structure that is away from the substrate and the substrate.

5. The method for manufacturing a display panel as described in claim 3, characterized in that, The materials of the first protective layer, the second protective layer, and the third protective layer include organic materials; Preferably, the materials of the first protective layer, the second protective layer, and the third protective layer include photoresist.

6. The method for manufacturing a display panel as described in claim 3, characterized in that, The step of forming the encapsulation layer on the side of the light-emitting device away from the substrate includes: A first encapsulation portion is formed on the side of the first light-emitting device that is away from the substrate; A second encapsulation portion is formed on the side of the second light-emitting device that is away from the substrate; A third encapsulation portion is formed on the side of the third light-emitting device that is away from the substrate; Preferably, the material of the encapsulation layer includes at least one of inorganic materials and metal oxides; Preferably, the material of the encapsulation layer includes at least one of silicon oxide, silicon nitride, or aluminum oxide.

7. The method for manufacturing a display panel as described in claim 6, characterized in that, The step of forming a first encapsulation portion on the side of the first light-emitting device away from the substrate includes: Before removing the first protective layer, a first material layer is formed on the side of the first light-emitting device away from the substrate; The first material layer corresponding to the second opening and the third opening is removed to form the first encapsulation portion; The step of forming a second encapsulation portion on the side of the second light-emitting device away from the substrate includes: Before removing the second protective layer, a second material layer is formed on the side of the second light-emitting device away from the substrate; The second material layer corresponding to the first opening and the third opening is removed to form the second encapsulation portion; The step of forming a third package portion on the side of the third light-emitting device away from the substrate includes: A third material layer is formed on the side of the third light-emitting device that is away from the substrate; The third material layer corresponding to the first opening and the second opening is removed to form the third encapsulation portion.

8. The method for manufacturing a display panel as described in claim 7, characterized in that, The step of forming a first encapsulation portion on the side of the first light-emitting device away from the substrate further includes: Before the step of removing the first material layer corresponding to the second opening and the third opening, a first photolithography layer is formed on the side of the first material layer away from the substrate, the first photolithography layer corresponding to the first opening; The first material layer and the first light-emitting device not covered by the first photolithography layer are removed by an etching process; The step of forming a second encapsulation portion on the side of the second light-emitting device away from the substrate further includes: Before the step of removing the second material layer corresponding to the first opening and the third opening, a second photolithography layer is formed on the side of the second material layer facing away from the substrate, the second photolithography layer corresponding to the second opening; The second material layer and the second light-emitting device not covered by the second photolithography layer are removed by an etching process; The step of forming a third package portion on the side of the third light-emitting device away from the substrate further includes: Before the step of removing the third material layer corresponding to the first opening and the second opening, a third photolithography layer is formed on the side of the third material layer facing away from the substrate, the third photolithography layer corresponding to the third opening; The third material layer and the third light-emitting device that are not covered by the third photolithography layer are removed by an etching process.

9. The method for manufacturing a display panel as described in claim 8, characterized in that, The step of removing the first protective layer includes: removing the first protective layer and the first photolithography layer by an ashing process and / or a stripping process; The step of removing the second protective layer includes removing the second protective layer and the second photolithography layer by an ashing process and / or a stripping process; The step of removing the third protective layer includes removing the third protective layer and the third photolithography layer by an ashing process and / or a stripping process.

10. The method for manufacturing a display panel as described in claim 3, characterized in that, The materials of the first light-emitting device, the second light-emitting device, and the third light-emitting device are at least partially different; Preferably, the wavelength of the light emitted by the first light-emitting device is greater than the wavelength of the light emitted by the second light-emitting device; Preferably, the wavelength of light emitted by the second light-emitting device is greater than the wavelength of light emitted by the third light-emitting device.

11. The method for manufacturing a display panel as described in claim 1, characterized in that, The step prior to forming the isolation structure on one side of the substrate includes: A first electrode layer is formed on one side of the substrate, and the first electrode layer includes a plurality of first electrodes; A pixel defining layer is formed on one side of the substrate, the pixel defining layer covering the first electrode layer, the pixel defining layer including a plurality of pixel openings, the pixel openings corresponding to the first electrode.

12. A display panel, characterized in that, The display panel is manufactured using the display panel manufacturing method described in any one of claims 1-11.

13. A display device, characterized in that, Includes the display panel as described in claim 12.

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