Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The invention provides a technology capable of inhibiting foreign matters from adhering to a substrate. The present invention is provided with: a processing container having therein a first space and a second space positioned above the first space; a mounting part on which the substrate is mounted; a drive unit that drives the mounting unit; a first supply system that controls the supply of a first gas into the processing container; a second supply system for controlling the supply of a second gas having a molecular structure different from that of the first gas into the processing container; and a control unit configured so as to be able to control the drive unit, the first supply system, and the second supply system so as to sequentially perform: (a) a process of supplying the first gas to the substrate in the first space; (b) a process of disposing the substrate in the second space; and (c) a process of supplying the second gas to the substrate in the second space.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing method, and a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] As a step in the substrate processing process (a semiconductor device manufacturing process), there are cases where gases are supplied to the substrate to assist in substrate processing by modifying the substrate surface, and gases are supplied to the substrate surface for film formation and other substrate processing purposes. (See, for example, Patent Document 1)

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-148256 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique for suppressing the adhesion of foreign matter to a substrate.

[0008] Methods for solving problems

[0009] According to one aspect of this disclosure, the following technology is provided, wherein it possesses:

[0010] A processing container that contains a first space inside and a second space located above the first space;

[0011] The mounting section, which mounts the substrate;

[0012] The driving unit drives the mounting unit;

[0013] A first supply system controls the supply of a first gas into the processing container;

[0014] A second supply system controls the supply of a second gas, whose molecular structure is different from that of the first gas, into the processing container;

[0015] The control unit is configured to control the drive unit, the first supply system, and the second supply system so that they can operate sequentially:

[0016] (a) Processing of supplying the first gas to the substrate within the first space;

[0017] (b) The process of arranging the substrate within the second space;

[0018] (c) Processing of supplying the second gas to the substrate within the second space.

[0019] Invention Effects

[0020] According to this disclosure, foreign matter can be prevented from adhering to the substrate. Attached Figure Description

[0021] Figure 1 This is a schematic cross-sectional view of the processing container of the substrate processing apparatus according to the embodiment, showing the case where the wafer is set to the first position.

[0022] Figure 2 This is a schematic cross-sectional view of the processing container of the substrate processing apparatus according to the embodiment, showing the case where the wafer is set in the second position.

[0023] Figure 3 This is a diagram illustrating a schematic structural example of the gas supply unit in an embodiment.

[0024] Figure 4 This is a block diagram of the controller and its surroundings in the implementation method.

[0025] Figure 5 This is an overall flowchart of the substrate processing in the implementation method.

[0026] Figure 6 This is a cross-sectional view of the processing container of a substrate processing device using other methods. Detailed Implementation

[0027] The following is mainly for reference. Figures 1-6 This description explains one aspect of the present disclosure. Furthermore, the accompanying drawings used in the following description are schematic diagrams, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to reality. Additionally, the dimensional relationships and ratios of elements may not be consistent between multiple drawings. Furthermore, regarding the relationship between... Figure 1 Elements that are substantially the same as those described are given the same reference numerals, and their descriptions are omitted. Furthermore, unless otherwise stated in the specification, elements are not limited to one, and multiple elements may exist.

[0028] (1) Substrate processing device

[0029] like Figure 1As shown, the substrate processing apparatus 100 includes a processing container 201. The processing container 201 is constructed of a metal material such as aluminum (Al) or stainless steel (SUS). Inside the processing container 201 in the processing chamber, there is a first space 301 for processing a wafer 1, which serves as a substrate, using a first gas, and a second space 302 for processing the wafer 1 using a second gas. The second space 302 is formed above the first space 301. A partition 202 is provided between the first space 301 and the second space 302. The processing container 201 is composed of an upper container 201a and a lower container 201b. Both the first space 301 and the second space 302 are disposed within the lower container 201b.

[0030] A first gas supply port (first supply section) 203 and a substrate loading / unloading port 500 adjacent to the gate valve 501 are provided on the side of the first space 301 of the lower container 201b. The wafer 1 moves between the first space 301 and the transport chamber (not shown) via the substrate loading / unloading port 500. That is, the first space 301 is also the transport space for transporting the wafer 1 between the inside and outside of the processing container 201.

[0031] A substrate support 232 for supporting the wafer 1 is disposed in the processing container 201. The substrate support 232 mainly includes a substrate stage 206 and a heater 207, which serves as a heat source, disposed within the substrate stage 206. The temperature of the heater 207 is controlled by a heater control unit 208, which serves as a temperature control unit.

[0032] The substrate mounting stage 206 is supported by a shaft 205. The shaft 205 passes through the bottom of the processing container 201 and is connected to the lifting mechanism 204 outside the processing container 201. The lifting mechanism 204, as a drive unit, mainly has a support shaft that supports the shaft 205 and a working part that lifts or rotates the support shaft. The working part has, for example, a lifting mechanism including a motor for lifting and lowering, and a gear for rotating the support shaft, or a rotating mechanism. By operating the lifting mechanism 204, the shaft 205 and the substrate mounting stage 206 are lifted and lowered, thereby allowing the wafer 1 placed on it (on the substrate mounting surface) to be lifted and lowered.

[0033] like Figure 1 As shown, during the transport of wafer 1, the substrate mounting stage 206 lowers the substrate mounting surface to a first position opposite the substrate loading / unloading outlet 500. Then, wafer 1 is processed using a first gas at this first position. Furthermore, at this first position, the first space 301 and the second space 302 are not separated. Then, during the processing of wafer 1 based on a second gas, as... Figure 2As shown, wafer 1 rises to the second position of the processing position within the second space 302. In the second position, the top of the substrate stage 206 can also abut against the partition 202 to separate the first space 301 from the second space 302.

[0034] A second gas supply port (second supply section) 209 is provided above the second space 302, i.e., the upper container 201a. The second gas and the purge gas, which is the third gas, are supplied from the second supply section 209 simultaneously or at different times.

[0035] The shower head 210, connected to the second supply section 209 of the upper container 201a, has, for example, a disc-shaped dispersion plate. Multiple through holes (second gas supply holes) are provided on this dispersion plate. The dispersion plate is configured to face the substrate mounting surface, and the through holes are provided on the entire surface of the dispersion plate. A buffer space 303 for gas diffusion is provided between the dispersion plate and the second supply section 209. Gas supplied to the shower head 210, after being retained in the buffer space 303, is supplied to the second space 302 via the second supply section 209 (provided in the through holes of the dispersion plate). Alternatively, the shower head 210 can also be considered as part of the second supply section 209.

[0036] (2) Gas supply system

[0037] Next, using Figure 1 , Figure 2 and Figure 3 This describes a gas supply system that supplies various gases to the processing container 201.

[0038] Furthermore, the first gas and the second gas are gases with different molecular structures. Also, in the following description, one or both of the first and second raw material gases will sometimes be referred to as the second gas. Moreover, in the following description, the third gas is an inert gas, for example, in the case of purging the container 201.

[0039] In the first gas supply pipe 211, a first gas supply source 214, a mass flow controller (MFC) 213 (serving as a flow control unit), and a valve 212 are sequentially arranged from the upstream side. The first gas supply pipe 211 is connected to the first supply unit 203 downstream of the valve 212. The first supply system 215 is mainly constructed by the first gas supply pipe 211, MFC 213, valve 212, and first supply unit 203. Alternatively, the first gas supply source 214 may be included in the first supply system 215. The first supply system 215 controls the supply of the first gas to the processing container 201 via the first supply unit 203.

[0040] In the first raw material gas supply pipe 216a, a first raw material gas supply source 219a, an MFC 218a, and a valve 217a are sequentially arranged from the upstream side. The first raw material gas supply pipe 216a is connected to the second supply section 209 downstream of the valve 217a. The first raw material gas supply system is mainly constituted by the first raw material gas supply pipe 216a, the MFC 218a, the valve 217a, and the second supply section 209. Alternatively, the first raw material gas supply source 219a may be included in the first raw material gas supply system.

[0041] In the second raw material gas supply pipe 216b, a second raw material gas supply source 219b, an MFC 218b, and a valve 217b are sequentially arranged from the upstream side. The second raw material gas supply pipe 216b is connected to the second supply section 209 downstream of the valve 217b. The second raw material gas supply system is mainly constituted by the second raw material gas supply pipe 216b, the MFC 218b, the valve 217b, and the second supply section 209. Alternatively, the second raw material gas supply source 219b may be included in the second raw material gas supply system.

[0042] In the following description, one or both of the first raw material gas supply system and the second raw material gas supply system are sometimes referred to as the second supply system 220. The second supply system 220 controls the supply of the second gas to the processing container 201 via the second supply section 209.

[0043] In the third gas supply pipe 221, a third gas supply source 224, a mass flow controller (MFC) 223 (serving as a flow control unit), and a valve 222 are sequentially arranged from the upstream side. The third gas supply pipe 221 is connected to the second supply unit 209 downstream of the valve 222. The third supply system 225 is mainly constructed by the third gas supply pipe 221, MFC 223, valve 222, and second supply unit 209. Alternatively, the third gas supply source 224 may be included in the third supply system 225. The third supply system 225 controls the supply of the third gas to the processing container 201 via the second supply unit 209.

[0044] Here, an inert gas supply system with the same structure as the third supply system 225 can also be connected to the first gas supply unit 203, and inert gas can be supplied from the first gas supply unit 203 to the first space 301.

[0045] (3) Exhaust system

[0046] The lower container 201b of the processing container 201 is provided with an exhaust port 226a as a first exhaust port and an exhaust port 226b as a second exhaust port. Exhaust port 226a is located on the side of the first space 301, and exhaust port 226b is located on the side of the second space 302. Exhaust pipes connecting exhaust ports 226a and 226b are respectively equipped with valves 227a and 227b, and converge downstream of each valve to form an exhaust pipe 228. Here, at least one of valves 227a and 227b can also be an adjustable valve. Furthermore, the magnitude of gas conduction between the downstream side of exhaust port 226a and the downstream side of exhaust port 226b can be controlled by adjusting the opening of these valves.

[0047] Furthermore, the exhaust pipe 228 is equipped with an APC (Auto Pressure Controller) 229 and a pressure monitoring unit 230 to control the pressure within the processing container 201 to a specified level. The APC 229 has a valve body (not shown) with adjustable opening, which adjusts the conduction of the exhaust pipe 228 according to instructions from the controller 400. The exhaust pipe 228, pressure monitoring unit 230, valves 227a and 227b, and APC 229 constitute the exhaust system. Alternatively, a vacuum pump 231 may be included in the exhaust system.

[0048] (4) Controller

[0049] exist Figure 3 The diagram shows a block diagram of the control unit included in the substrate processing apparatus 100. The controller 400 is configured as a computer including a CPU (Central Processing Unit) 400a, RAM (Random Access Memory) 400b, a storage device 400c, and an I / O port 400d. The RAM 400b, storage device 400c, and I / O port 400d are configured to communicate with the CPU 400a via an internal bus 400e. The controller 400 is connected, for example, to an input / output device 401 configured as a touch panel or an external storage device 402.

[0050] The storage device 400c is configured such as flash memory or HDD (Hard Disk Drive). Within the storage device 400c, control programs that control the operation of the board processing apparatus or process recipes that describe the board processing procedures or conditions (described later) are readablely stored. Furthermore, the recipes are combined to enable the controller 400 to execute the various processes of the board processing method (described later) to obtain a specified result; this is a high-level language compared to the control program. The control program and the recipe are collectively referred to as a program. The storage device 400c also sequentially stores log information recording the operation or status of the apparatus. RAM 400b is configured as a memory area (working area) that temporarily holds programs or data read by the CPU 400a. Additionally, the provision of programs or data to the computer and the provision of programs or data from the computer to external devices can be performed without the use of external storage devices, utilizing communication means such as the Internet or dedicated lines.

[0051] I / O port 400d is connected to various structures of the board processing device, including gate valve 501, lifting mechanism 204, APC 229, pressure monitoring unit 230, vacuum pump 231, MFC 213, 218a, 218b, 223, valves 212, 217a, 217b, 222, 227a, 227b, heater control unit 208, etc.

[0052] CPU 400a is configured to read and execute control programs from storage device 400c, and to read wafer recipes from storage device 400c based on input operation instructions from input / output device 401. CPU 400a is configured to control the opening and closing of gate valve 501, the lifting mechanism 204, the APC 229, the pressure detection of pressure monitoring unit 230, the on / off control of vacuum pump 231, the flow adjustment of MFCs 213, 218a, 218b, and 223, the opening and closing of valves 212, 217a, 217b, 222, 227a, and 227b, and the temperature control of heater 207 in heater control unit 208, etc., according to the read recipe.

[0053] (5) Substrate processing method

[0054] As a manufacturing process for semiconductor devices (equipment), one example of a substrate processing method for forming a film on wafer 1 using a substrate processing apparatus 100 is as follows: Figure 5 The following explanation will be provided. In the following explanation, the operation of each part constituting the substrate processing apparatus is controlled by the controller 400.

[0055] When the term "wafer" is used in this specification, it sometimes refers to the wafer itself, and sometimes to a laminate of the wafer and a specified layer or film formed on its surface. When the term "surface of the wafer" is used in this specification, it sometimes refers to the surface of the wafer itself, and sometimes to the surface of a specified layer, etc., formed on the wafer. When described in this specification, for example, as "forming a desired film on a wafer" or "forming a film on a wafer," it sometimes means forming the specified film directly on the surface of the wafer itself, and sometimes means forming the specified film on a layer, etc., formed on the wafer. The term "substrate" is also synonymous with the term "wafer" in this specification.

[0056] The term "supply quantity" in this specification refers to the flow rate of the gas supplied, "pressure" refers to the pressure inside the reaction chamber, and "processing temperature" refers to the temperature of the wafer or the temperature of the processing container 201.

[0057] (Wafer loading: S1)

[0058] like Figure 1 As shown, the substrate stage 206 is lowered to the first position and the gate valve 501 is opened. Then, the transport mechanism (not shown) places the wafer 1 onto the substrate stage 206 in the first space 301 via the substrate loading / unloading outlet 500.

[0059] After the wafer 1 is placed on the substrate stage 206, power is supplied to the heater 207 disposed inside the substrate stage 206 to heat the wafer 1. At this time, the output of the heater 207 is controlled according to the temperature information of the wafer 1 detected by the temperature sensor (not shown), thereby adjusting the temperature of the wafer 1.

[0060] (First gas supply process: S2)

[0061] The first gas is supplied from the first supply system 215 to the wafer 1 in the first space 301 via MFC 213, valve 212, and the first supply unit 203. At this time, the exhaust system is controlled so that the gas in the processing container 201 is mainly exhausted through the exhaust port 226a. After a predetermined time has elapsed since the start of the first gas supply, valve 212 is closed, thereby ending step S2. Furthermore, the first gas supply process accompanying the first gas supply to the surface of wafer 1 can be performed multiple times.

[0062] The above-mentioned treatment is carried out, for example, under the conditions of a first gas supply of 5 to 1000 sccm, a pressure of 133 to 13332 Pa, and a treatment temperature of 50 to 600°C.

[0063] Furthermore, the numerical ranges expressed in this specification, such as "5 to 1000 sccm," refer to the inclusion of both the lower and upper limits within that range. Therefore, for example, "5 to 1000 sccm" means "between 5 sccm and 1000 sccm." The same applies to other numerical ranges.

[0064] At this time, the third supply system 225 can also be used to supply inert gas into the second space 302. In this case, the inert gas can flow from the second space 302 into the first space 301. As a result, the inflow of the first gas into the second space 302 or the adhesion of foreign matter caused by the first gas to the inner wall of the lower container 201b can be suppressed.

[0065] The first gas is, for example, an adsorption barrier gas that prevents the adsorption of the second gas onto wafer 1. Using the first gas, an inhibition layer for the formation of the barrier film is formed on at least a portion of the surface of wafer 1. The first gas is selected based on the film to be formed in the film deposition process described later. For example, when titanium tetrachloride (TiCl4) gas is used as the first raw material gas, tungsten hexafluoride (WF6) gas or similar fluorine-containing halide gas can be used as the first gas.

[0066] Inert gases include, for example, N2 gas, helium (He) gas, neon (Ne) gas, argon (Ar) gas, etc.

[0067] For example, compared to the deep side of the recess formed on wafer 1, a suppression layer can be preferentially formed on the opening side of the recess. Thus, during the film deposition process, film deposition can be suppressed on the opening side of the recess and promoted on the deep side of the recess. Alternatively, a film (gap filler) embedded in at least a portion of the recess can also be formed.

[0068] Alternatively, an inhibition layer can be formed preferentially on the surface of a specified material, for example, formed on wafer 1, compared to other surfaces. In this case, a film can be preferentially formed on other surfaces for the specified surface.

[0069] In step S2, in addition to the surface of wafer 1, at least a portion of the surface of objects within the first space 301 (e.g., the inner wall of the lower container 201b, the underside of the substrate stage 206, shaft 205, etc.) may also be formed. Thus, when the second gas used in film formation in the second space 302 (described later) flows into the first space 301, the reaction caused by the second gas on the surface of the objects within the first space 301 can be suppressed.

[0070] In step S2, it is preferable that the gas in the processing container 201 is mainly exhausted through the exhaust port 226a. For example, it is preferable to open valve 227a and close valve 227b in a manner that prevents gas from being exhausted from the exhaust port 226b. Alternatively, it is preferable that the conduction of gas downstream of the exhaust port 226a is greater than the conduction of gas downstream of the exhaust port 226b. In these cases, since the first gas supplied to the first space 301 is less likely to flow into the second space 302, the adhesion of foreign matter caused by the first gas on the inner wall of the lower container 201b can be suppressed.

[0071] At this time, the controller 400 preferably controls the exhaust system or various gas supply systems in a manner that makes the pressure in the second space 302 higher than the pressure in the first space 301. As a result, since it is less likely for the first gas to flow into the second space 302, it is possible to further suppress the adhesion of foreign matter caused by the first gas to the inner wall of the lower container 201b.

[0072] Here, we consider the case where the temperature of wafer 1 in step 2 is lower than the temperature of wafer 1 in step 4, which will be described later. When wafer 1 is at a low temperature, the gas used tends to adhere to the surface of wafer 1, thus improving the adsorption effect on the barrier gas. However, in step S4, the second space 302 is more likely to reach a high temperature than in step S2, so the first gas adsorbed in the second space 302 tends to detach. Therefore, foreign matter caused by the first gas is easily generated. Since the technology of this disclosure supplies the first gas and the second gas to wafer 1 separately in the first space 301 and the second space 302, even in this case, the incorporation of foreign matter into wafer 1 can be effectively suppressed.

[0073] After the supply of the first gas in step S2 is completed, the third supply system 225 can also be used to supply inert gas into the processing container 201, and exhaust gas can be discharged from one or both of the exhaust ports 226a and 226b. As a result, since the processing container 201 is purged, the movement or retention of the first gas remaining in the processing container 201 and foreign matter caused by the first gas into the second space 302 can be suppressed.

[0074] Alternatively, after the supply of the first gas in step S2 is completed, inert gas can be supplied from the first gas supply unit 203 into the first space 301, and exhaust can be performed from one or both of exhaust ports 226a and 226b. As a result, the first space 301 will be purged, and the first gas remaining in the processing container 201 will not easily move to the second space 302.

[0075] (Wafer movement process: S3)

[0076] The lifting mechanism 204 moves the wafer 1 towards the second space 302 by raising the substrate mounting stage 206. At this time, it is preferable to open valves 227a and 227b to vent gas from the processing container 201. This suppresses the movement and retention of the first gas remaining in the processing container 201 and foreign matter caused by the first gas into the second space 302. Furthermore, it is preferable to supply inert gas from the first supply unit 203 into the processing container 201 at this time. This prevents the first gas remaining in the processing container 201 from easily moving into the second space 302.

[0077] Here, the partition 202 is configured to overlap with the substrate mounting stage 206 when viewed from the direction of movement of the substrate mounting stage 206. Therefore, the substrate mounting stage 206 rises to a position where a portion of the substrate mounting stage 206 overlaps with the partition 202 disposed in the lower container 201b. Figure 2 (as shown in the image). This prevents residual first gas in the first space 301 and foreign matter caused by the first gas from flowing into the second space 302.

[0078] (Film forming process: S4)

[0079] Next, by sequentially executing steps S41 to S44, step 4, which is a film-forming process (second gas supply process, second gas treatment process), is carried out.

[0080] Here, in step 4, the exhaust system is controlled so that the gas in the processing container 201 is mainly exhausted through the exhaust port 226b. For example, it is preferable to open valve 227b and close valve 227a. Alternatively, it is preferable to increase the gas conduction downstream of exhaust port 226b compared to the downstream side of exhaust port 226a. In this case, since the second gas supplied to the second space 302 is less likely to flow into the first space 301, the formation of a membrane in the first space 301 can be suppressed.

[0081] Furthermore, in step S4, inert gas can also be supplied from the first gas supply unit 203 into the first space 301. As a result, since the flow of inert gas from the first space 301 to the second space 302 is formed, the flow of the second gas from the second space 302 into the first space 301 can be suppressed.

[0082] (First raw material gas supply process: S41)

[0083] The first raw material gas is supplied to wafer 1 through the first raw material gas supply pipe 216a. At this time, the first raw material gas is selectively adsorbed onto portions of the surface of wafer 1 other than the inhibition layer formed thereon. An inert gas may also be supplied from the third supply system 225 at this time. After a predetermined time has elapsed since the start of the second gas supply, valve 217a is closed, thereby ending step S41. For example, titanium tetrachloride (TiCl4) gas can be used as the first raw material gas.

[0084] (Purge gas supply process: S42)

[0085] After step S41 is completed, exhaust is performed while both valves 227b and 227a are open. Inert gas is supplied from the third supply system 225 to purge the treatment container 201. This removes residual first raw material gas and foreign matter caused by the first raw material gas from the second space 302.

[0086] (Second raw material gas supply process: S43)

[0087] Next, the second raw material gas is supplied to wafer 1 through the second raw material gas supply pipe 216b. At this time, the first raw material gas adsorbed on wafer 1 reacts with the second raw material gas to form the desired film. Alternatively, an inert gas can be supplied simultaneously from the third supply system 225. After a predetermined time has elapsed since the start of the second gas supply, valve 217b is closed, thereby ending step S43. For example, ammonia (NH3) gas can be used as the supplied second raw material gas. In this case, when the first raw material gas is TiCl4 gas, a TiN film is formed.

[0088] (Purge gas supply process: S44)

[0089] After step S43 is completed, exhaust is performed while valve 227b or both valves 227a and 227b are open, and inert gas is supplied from the third supply system 225 to purge the treatment container 201. This removes unreacted gas and reaction byproducts from the second space 302.

[0090] (Number of times the regulation is implemented: S45)

[0091] Perform a cycle of steps S41, S42, S43, and S44 at least once (n times, where n is an integer greater than or equal to 1) to form a membrane of the desired thickness.

[0092] In step S4, as described above, since a portion of the substrate mounting stage 206 overlaps with the partition 202, the second space 302 is blocked from the first space 301 of the first gas supply process. This prevents residual first gas and foreign matter caused by the first gas from adhering to the film surface and the inner wall of the lower container 201b of the second space 302 during film formation. Furthermore, since the first space 301 is blocked, residual first gas and foreign matter caused by the residual first gas can be efficiently discharged from the first space 301.

[0093] In addition, regarding the above-mentioned film-forming process, both the first raw material gas and the second raw material gas are implemented under conditions such as a supply rate of 100 to 1000 sccm, a pressure of 1333 to 13332 Pa, and a processing temperature of 50 to 600°C.

[0094] After step S4, while keeping valve 227b or both valves 227a and 227b open, the second space 302 is vented to remove unreacted gases and reaction byproducts remaining in the processing container 201. Then, valve 222 is opened to supply inert gas into the processing container 201. Alternatively, purging can be performed simultaneously with or after step S5, as described later.

[0095] (Wafer movement process: S5)

[0096] The substrate stage 206 is lowered by the lifting mechanism 204, so that the wafer 1 is moved to the first space 301.

[0097] (Wafer removal: S6)

[0098] Open gate valve 501. Then, the conveying mechanism (not shown) moves wafer 1 to the outside of processing container 201 via substrate loading / unloading outlet 500.

[0099] According to this embodiment, in addition to the effects described above, one or more of the effects shown below can be achieved.

[0100] After the surface of wafer 1 is modified using the first gas, when wafer 1 is processed using the second gas within the same processing container 201, the first gas may adhere to objects within the processing container 201 (e.g., the inside of the supply section, the inner wall of the processing container 201, the underside of the substrate mounting stage 206, etc.). Furthermore, when the second gas is supplied to wafer 1, components from the first gas may be included in the film. Additionally, due to the action of the first gas, the film formed on the surface of objects within the processing container 201 may peel off, and this peeled film may adhere to the surface of wafer 1. In other words, the occurrence of these foreign substances may reduce the yield of the substrate processing.

[0101] After supplying the first gas to the wafer in the first space 301, the second gas is supplied to the wafer in the upper second space 302. This prevents the first gas from adhering to the surface of objects within the second space 302. Therefore, it prevents the first gas and any foreign matter caused by the first gas from adhering to the wafer 1.

[0102] The flow of gas between the first space 301 and the second space 302 is suppressed by the partition 202. The first gas in the first space 301 does not easily flow into the second space 302. Therefore, the first gas remaining in the film forming process and foreign matter caused by the first gas do not easily adhere to the inner wall of the lower container 201b of the second space 302 and the wafer 1.

[0103] Furthermore, the second space 302 is positioned above the first space 301. Thus, even if the spaces performed in steps S2 and S4 are separated internally, the increase in the area (footprint) occupied by the substrate processing apparatus 100 in the horizontal direction can be suppressed.

[0104] Furthermore, while the above description addresses the use of WF6 gas as the first gas, this disclosure is not limited to this scenario. The same principle applies when using other gases such as chlorine trifluoride (ClF3), nitrogen trifluoride (NF3), hydrogen fluoride (HF), and fluorine (F2).

[0105] Similarly, the above description illustrates the use of TiCl4 gas as the first raw material gas in the second gas supply step, but this disclosure is not limited to this case. It can also be applied similarly to the use of other gases such as halogen-containing silicon tetrachloride (SiCl4), aluminum tetrachloride (AlCl4), zirconium tetrachloride (ZrCl4), hafnium tetrachloride (HfCl4), tantalum pentachloride (TaCl5), tungsten pentachloride (WCl5), molybdenum pentachloride (MoCl5), and tungsten hexachloride (WCl6).

[0106] Similarly, the above description illustrates the use of NH3 gas as the second raw material gas in the second gas supply step, but this disclosure is not limited to this case. The same principle applies when using a gas that reacts with the first raw material gas, such as a mixture of hydrazine (N2H4), water (H2O), oxygen (O2), hydrogen (H2), and O2, as the reactant gas.

[0107] (Modified Example)

[0108] use Figure 6The modified substrate processing apparatus is described below. The modified substrate processing apparatus includes a plasma generation unit that activates a second gas (one or both of the first and second raw material gases) within the second space 302 through a potential difference with the substrate mounting stage 206. The other structures of the modified substrate processing apparatus are the same as those of the substrate processing apparatus of the embodiment.

[0109] Matching unit 602 and high-frequency power supply 603 are connected to electrode 604 disposed within upper container 201a to serve as plasma generation unit, i.e., activation unit 600, capable of supplying electromagnetic waves (high-frequency power or microwaves). Electrode 604 is configured to generate capacitively coupled plasma. Bias electrode 605 within substrate mounting stage 206 is connected to bias adjustment unit 606, allowing adjustment of the bias voltage. Alternatively, an impedance meter 601 may be disposed between electrode 604 and high-frequency power supply 603 in activation unit 600.

[0110] Furthermore, the high-frequency power supply 603, the matching device 602, and the impedance meter 601 can transmit and receive signals with the controller 400. Based on the value measured by the impedance meter 601, the controller 400 can control the settings of the high-frequency power supply 603 and the matching device 602.

[0111] The same effect as described above can be achieved in this modified example. Furthermore, in this modified example, the raw material gas is further decomposed and activated into a plasma state to carry out the reaction, thus forming a uniform film with good coating properties on the fine structure of wafer 1. In addition, since the processing temperature can be set lower, the influence of the processing temperature on the surface of wafer 1 can also be suppressed.

[0112] In this case, since a voltage is applied between the upper container 201a and the substrate stage 206, it is preferable that the substrate stage 206 does not contact any objects other than the shaft 205 (e.g., partition 202). Therefore, in step S4, the second gas flows into the first space 301, where a film-forming reaction easily occurs. According to the present disclosure, in step S2, an inhibition layer is formed on the wafer 1, and an inhibition layer can also be formed on the surface of objects within the first space 301 (e.g., the inner wall of the lower container 201b or the valve 501). Therefore, the generation of foreign matter within the first space 301 can be suppressed.

[0113] The methods or variations described above can be used in appropriate combinations. In this case, the processing procedures and conditions can be set to be the same as those in the methods or variations described above.

[0114] In the above-described method and its variations, an example was described where an adsorption barrier gas was supplied as the first gas before step S4 (film formation process). This disclosure also applies to the case where an adsorption aid gas is supplied as the first gas in step 2, which assists in the adsorption of a portion of the subsequently supplied second gas, i.e., the first raw material gas. That is, the adsorption aid gas assists in the adsorption of the subsequently supplied first raw material gas onto at least a portion of the surface of wafer 1. In other words, it can assist in film formation (selective film formation) onto at least a portion of the surface of wafer 1. Furthermore, based on the film-forming properties of the auxiliary raw material gas in the film formation process, the adsorption aid gas can also be referred to as a film-forming aid gas.

[0115] Alternatively, in step S4, one of steps S42 and S44 can be omitted. That is, only one of the first raw material gas and the second raw material gas can be supplied to the second space 302 to process wafer 1. Furthermore, in step S4, step S43 can be performed simultaneously with at least a portion of step S41. That is, at least a portion of the first raw material gas and the second raw material gas can be supplied to the second space 302 simultaneously to process wafer 1. The same effect can be achieved in these cases.

[0116] The above-described method illustrates an example of forming a film using a single-sheet substrate processing apparatus that processes one or more substrates at a time. This disclosure is not limited to the above-described method and variations. For example, when forming a film using a batch substrate processing apparatus that processes multiple substrates at a time, both hot-wall and cold-wall processing furnaces can be used.

[0117] When using these substrate processing devices, the same processing procedures and conditions as described above can be used to perform each process, and the same effect as described above can be achieved.

[0118] Explanation of reference numerals in the attached figures

[0119] 201 Processing Container

[0120] 202 partition

[0121] 204 Lifting Mechanism (Drive Unit)

[0122] 206 Substrate mounting stage (mounting section)

[0123] 215 First Supply System

[0124] 220 Second Supply System

[0125] 400 Control Department.

Claims

1. A substrate processing apparatus, characterized in that, have: A processing container that contains a first space inside and a second space located above the first space; The mounting section, which mounts the substrate; The driving unit drives the mounting unit; A first supply system controls the supply of a first gas into the processing container; A second supply system controls the supply of a second gas, whose molecular structure is different from that of the first gas, into the processing container; The control unit is configured to control the drive unit, the first supply system, and the second supply system so that they can operate sequentially: (a) Processing of supplying the first gas to the substrate within the first space; (b) The process of arranging the substrate within the second space; (c) Processing of supplying the second gas to the substrate within the second space.

2. The substrate processing apparatus according to claim 1, characterized in that, The first supply system includes a first supply unit disposed in the first space. The second supply system includes a second supply unit disposed in the second space. In (a), the control unit further controls the first supply system so that the first gas is supplied via the first supply unit, and in (c), it further controls the second supply system so that the second gas is supplied via the second supply unit.

3. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further comprises: Exhaust system; The first exhaust port connects the first space to the exhaust system. The control unit further controls the exhaust system so that gas is discharged from the first exhaust port in (a).

4. The substrate processing apparatus according to claim 3, characterized in that, The substrate processing apparatus further includes a second exhaust port, which connects the second space to the exhaust system and is different from the first exhaust port. The control unit further controls the exhaust system so that gas is discharged from the second exhaust port in (b).

5. The substrate processing apparatus according to claim 4, characterized in that, The control unit can further control the exhaust system such that the pressure in the second space in (a) is higher than the pressure in the first space in (a).

6. The substrate processing apparatus according to claim 4, characterized in that, The control unit can further control the exhaust system, so that (1) In (a), the conduction of the gas downstream of the first exhaust port is greater than the conduction of the gas downstream of the second exhaust port, or, (2) In (a), the gas is prevented from being discharged from the second exhaust port.

7. The substrate processing apparatus according to claim 4, characterized in that, The control unit is capable of further controlling the exhaust system, so that gas is further discharged from the second exhaust port in (a).

8. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, The substrate processing apparatus further includes a third supply system that supplies purge gas to the second space. The control unit is able to further control the third supply system so that the purging gas is supplied to the second space in (a).

9. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, The substrate processing apparatus further includes a temperature control unit that controls the temperature of the substrate. The control unit can further control the temperature adjustment unit so that the temperature of the substrate in (a) is lower than the temperature of the substrate in (b).

10. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, The substrate processing apparatus further includes an inlet / outlet, which is disposed in the first space and configured to allow the substrate to move between the inside and outside of the processing container.

11. The substrate processing apparatus according to any one of claims 1 to 8, characterized in that, The substrate processing apparatus further includes a partition that inhibits the flow of gas between the first space and the second space.

12. The substrate processing apparatus according to claim 11, characterized in that, The partition is configured to overlap a portion of the mounting portion when viewed from the direction in which the mounting portion is driven.

13. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, In (a), at least a portion of the surface of the substrate is formed with an inhibition layer to suppress the processing based on the second gas in (b).

14. The substrate processing apparatus according to claim 13, characterized in that, In (a), the inhibition layer is further formed on at least a portion of the surface of the object within the first space.

15. The substrate processing apparatus according to any one of claims 1 to 8, characterized in that, The first supply system has a supply section disposed at a position opposite to the surface of the substrate.

16. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, The mounting portion is configured to mount multiple substrates.

17. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that, The substrate processing apparatus further includes an activation unit that activates the gas in the second space by changing the potential difference between the mounting unit and a component other than the mounting unit.

18. A substrate processing method, characterized in that, A process that involves performing the following steps in sequence: (a) A process of supplying a first gas to a substrate in a first space within a processing container; (b) A process of arranging the substrate in a second space located above the first space within the processing container; (c) A process of supplying a second gas with a molecular structure different from that of the first gas to the substrate in the second space.

19. A method for manufacturing a semiconductor device, characterized in that, A process that involves performing the following steps in sequence: (a) A process of supplying a first gas to a substrate in a first space within a processing container; (b) A process of arranging the substrate in a second space located above the first space within the processing container; (c) A process of supplying a second gas with a molecular structure different from that of the first gas to the substrate in the second space.

20. A program, characterized in that, The program causes the substrate processing device to execute the following process via a computer, wherein the following processes are performed sequentially: (a) The process of supplying a first gas to a substrate in a first space within a processing container; (b) The process of arranging the substrate in a second space located above the first space within the processing container; (c) The process of supplying a second gas with a molecular structure different from the first gas to the substrate in the second space.

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