Package carrier and package structure

Abstract

The invention provides a packaging substrate and a packaging structure, the packaging substrate comprises a substrate, a first redistribution layer and a first heat conduction layer, and the first heat conduction layer is located at one side, deviating from the substrate, of the first redistribution layer. Compared with the prior art, the heat dissipation area is increased, the overall temperature of the first electronic component can be effectively reduced, the working stability of the first electronic component is ensured, and the service life of the first electronic component is prolonged. Meanwhile, heat accumulation is avoided, the mechanical reliability of interconnection between the first electronic element and the packaging carrier plate is guaranteed, heat is prevented from being transmitted to the packaging carrier plate, and the electrical transmission performance of the packaging carrier plate is guaranteed.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, specifically to a packaging substrate and packaging structure. Background Technology

[0002] With the booming development of emerging fields such as smartphones, wearable devices, automotive electronics, and artificial intelligence, integrated circuits are moving towards diversified applications, and packaging technology is gradually becoming an important means to achieve miniaturization, lightweighting, and multifunctionality of electronic products. However, packaging technology still faces technical challenges. Summary of the Invention

[0003] To address the aforementioned issues, embodiments of this application provide a packaging carrier and a packaging structure.

[0004] In a first aspect, embodiments of this application provide a packaging carrier for electrically connecting to a first electronic component. The packaging carrier includes: a substrate, a first redistribution layer, and a first thermally conductive layer. The first redistribution layer is located on one side of the substrate; the first thermally conductive layer is located on the side of the first redistribution layer opposite to the substrate. The first thermally conductive layer has a first opening, and the first redistribution layer is electrically connected to the first electronic component through the first opening.

[0005] In conjunction with the first aspect, the first rewiring layer includes a first metal layer; a second thermally conductive layer is disposed between the first metal layer and the substrate; or, the first rewiring layer includes multiple first metal layers and a first insulating layer disposed between two adjacent first metal layers, the first insulating layer is provided with a second opening, a first interconnect structure is disposed in the second opening, and adjacent first metal layers are electrically connected through the first interconnect structure, wherein the first metal layer closest to the substrate is disposed between the first metal layer and the substrate and the substrate, and a second thermally conductive layer is disposed between the first metal layer and the substrate.

[0006] In conjunction with the first aspect, a first dielectric layer and a third thermally conductive layer are sequentially disposed between the first metal layer and the second thermally conductive layer in a direction away from the substrate.

[0007] In conjunction with the first aspect, the first insulating layer is the fourth thermally conductive layer.

[0008] In conjunction with the first aspect, along the direction away from the substrate, at least a portion of the first insulating layer includes a second dielectric layer and a fifth thermally conductive layer disposed sequentially, and at least a portion of the orthogonal projection of the fifth thermally conductive layer on the substrate covers the orthogonal projection of the second dielectric layer on the substrate.

[0009] In conjunction with the first aspect, the fifth thermal conductive layer includes a first thermal conductive portion and a second thermal conductive portion. The first thermal conductive portion extends along a first direction, and the orthographic projection of the first thermal conductive portion on the substrate coincides with the orthographic projection of the second dielectric layer on the substrate. The second thermal conductive portion extends along a second direction and is disposed around the second dielectric layer. The first direction and the second direction intersect, and the first direction is parallel to the substrate direction.

[0010] In conjunction with the first aspect, the fifth thermal conductive layer includes a third sub-thermal conductive portion, a fourth sub-thermal conductive portion, and a fifth sub-thermal conductive portion connected together. The third sub-thermal conductive portion extends along a first direction, and its orthographic projection on the substrate coincides with the orthographic projection of the second dielectric layer on the substrate. The fourth and fifth sub-thermal conductive portions extend along a second direction, with the fourth sub-thermal conductive portion surrounding the second dielectric layer. The fifth sub-thermal conductive portion is located between the second dielectric layer and the first interconnect structure. The first and second directions intersect, and the first direction is parallel to the substrate direction.

[0011] In conjunction with the first aspect, the substrate includes at least one through-hole penetrating the substrate, a conductive post is disposed within the through-hole and a first heat-conducting portion surrounding the conductive post, the conductive post being electrically connected to a first redistribution layer.

[0012] In conjunction with the first aspect, the packaging substrate further includes a second wiring layer, which is located on the side of the substrate away from the first electronic component; the second wiring layer includes a second metal layer, and a sixth thermally conductive layer is disposed between the second metal layer and the substrate; or, the second wiring layer includes multiple second metal layers and a second insulating layer disposed between two adjacent second metal layers, the second insulating layer is provided with a third opening, a second interconnect structure is disposed in the third opening, and adjacent second metal layers are electrically connected through the second interconnect structure, wherein the sixth thermally conductive layer is disposed between the second metal layer closest to the substrate and the substrate.

[0013] In conjunction with the first aspect, along the direction away from the substrate, at least a portion of the second insulating layer includes a third dielectric layer and a seventh thermally conductive layer disposed sequentially, and at least a portion of the orthogonal projection of the seventh thermally conductive layer on the substrate covers the orthogonal projection of the third dielectric layer on the substrate.

[0014] In conjunction with the first aspect, the packaging substrate is also used for electrical connection with the second electronic component. The packaging substrate also includes a second rewiring layer and an eighth thermal conductive layer. The second rewiring layer and the eighth thermal conductive layer are located on the side of the substrate away from the first thermal conductive layer and are arranged sequentially in a direction away from the substrate. The eighth thermal conductive layer is provided with a fourth opening, and the second rewiring layer is electrically connected to the second electronic component through the fourth opening.

[0015] Secondly, embodiments of this application provide a packaging structure, including: a first electronic component, a packaging carrier board, and a second electronic component; the packaging carrier board includes any of the packaging carrier boards mentioned above; wherein the first electronic component and the second electronic component are electrically connected through the packaging carrier board.

[0016] This application provides a packaging carrier and packaging structure. The packaging carrier includes a substrate, a first redistribution layer, and a first thermally conductive layer, wherein the first thermally conductive layer is located on the side of the first redistribution layer facing away from the substrate. Compared with related technologies, this embodiment increases the heat dissipation area, which can effectively reduce the overall temperature of the first electronic component, ensure the operational stability of the first electronic component, and extend the service life of the first electronic component. At the same time, it avoids heat accumulation, ensuring the mechanical reliability of the interconnection between the first electronic component and the packaging carrier, and also avoids heat transfer to the packaging carrier, ensuring the electrical transmission performance of the packaging carrier. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a packaging carrier provided in an embodiment of this application.

[0018] Figure 2 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0019] Figure 3 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0020] Figure 4 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0021] Figure 5 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0022] Figure 6 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0023] Figure 7 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0024] Figure 8 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0025] Figure 9 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0026] Figure 10 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0027] Figure 11 This is a top view of the conductive pillar and the first heat-conducting part provided in another embodiment of this application.

[0028] Figure 12 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0029] Figure 13This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0030] Figure 14 This is a schematic diagram of the structure of the packaging carrier provided in another embodiment of this application.

[0031] Figure 15 This is a schematic flowchart of a method for preparing a packaging substrate according to an embodiment of this application.

[0032] Figures 16-26 This is a schematic diagram of the packaging substrate preparation process provided in another embodiment of this application.

[0033] Figure 27 This is a schematic diagram of the packaging structure provided in one embodiment of this application.

[0034] Explanation of reference numerals in the attached figures 100 Package Carrier; 110 Substrate; RDL1 First Redistribution Layer; M1 First Metal Layer; DR1 First Thermally Conductive Layer; MB1 First Metal Section; MB2 Second Metal Section; k1 First Opening; DR2 Second Thermally Conductive Layer; JY1 First Insulating Layer; k2 Second Opening; HL1 First Interconnect Structure; JD1 First Dielectric Layer; DR3 Third Thermally Conductive Layer; DR4 Fourth Thermally Conductive Layer; JD2 Second Dielectric Layer; DR5 Fifth Thermally Conductive Layer; Z1 Sub-1 Thermally Conductive Section; Z2 Sub-2 Thermally Conductive Section; Z3 Sub-3 Thermally Conductive Section; Z4 Sub-4 Thermally Conductive Section; Z5 Sub-5 Thermally Conductive Section; TK Through-Hole; DZ Conductive Pillar; DRB1 First Thermally Conductive Section; DRB2 Second Thermally Conductive Section; RDL2 Second Redistribution Layer; M2 Second Metal Layer; DR6 Sixth Thermally Conductive Layer; JY2 Second Insulating Layer; k3 Third Opening; HL2 Second Interconnect Structure; JD3 Third Dielectric Layer; DR7 Seventh Thermally Conductive Layer; DR8 Eighth thermal conductive layer; k4 Fourth opening; E1 First electronic component; E2 Second electronic component; 111 Glass substrate; JDM1 First dielectric material layer; DRM3 Third thermal conductive material layer; HQ Solder ball; X First direction; Y Second direction; 200 Package structure. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] In the accompanying drawings, the dimensions of layers and regions may be exaggerated for clarity. It is understood that when a structure is referred to as being "on" or "below" another structure, the structure may be directly on or below the other structure, or there may be intermediate structures. The same reference numerals always indicate the same structure. Structures referred to herein include any of the following: membrane, element, device, component, assembly.

[0037] When a structure is referred to as being “connected” to another structure, it can be directly connected to the other structure or indirectly connected to the other structure by means of one or more intermediate structures placed between them.

[0038] In this specification, "electrical connection" includes the situation where components are connected together by elements that have a certain electrical function. There are no particular limitations on what constitutes an "electrical function," as long as it allows for the transmission and reception of electrical signals between the connected components. Examples of "electrical functions" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements with various functions.

[0039] In this specification, the term "same-layer arrangement" refers to a structure formed by two (or more) structures through the same patterning process, and their materials may be the same or different.

[0040] Through-Glass-Via (TGV) technology has become a key technology for achieving high-functionality integration of chips due to its excellent high-frequency electrical, mechanical, and thermal properties. Specifically, through-holes are fabricated on a substrate, conductive pillars are formed within the through-holes, and vertical electrical connections are achieved between the packaging substrate and electronic components (such as chips, high-bandwidth memory, etc.) through the packaging substrate.

[0041] Electronic components such as chips generate a significant amount of heat during operation. Related technologies address this by placing a heat dissipation layer on the side of the chip facing away from the packaging substrate. However, these technologies only dissipate heat from the top of the chip (the side facing away from the packaging substrate), leaving a large amount of heat accumulating between the chip and the packaging substrate. This excessive heat keeps the chip at a high temperature, reducing its operational stability and shortening its lifespan. Furthermore, the accumulated heat causes localized temperature rises, which decrease the mechanical reliability of the interconnect between the chip and the packaging substrate. In addition, a large amount of heat diffuses from the bottom of the chip (the side closest to the packaging substrate) onto the packaging substrate, reducing the electrical transmission performance of the packaging substrate.

[0042] Figure 1 This is a schematic diagram of the packaging carrier provided in one embodiment of this application. Figure 1As shown, the packaging substrate 100 includes: a substrate 110, a first redistribution layer RDL1, and a first thermal conductive layer DR1. The first redistribution layer RDL1 is located on one side of the substrate 110; the first thermal conductive layer DR1 is located on the side of the first redistribution layer RDL1 opposite to the substrate 110.

[0043] The first thermally conductive layer DR1 is provided with a first opening k1, and the first redistribution layer RDL1 is electrically connected to the first electronic component through the first opening k1.

[0044] Specifically, the first electronic component includes integrated circuits (ICs) and / or high-bandwidth memory (HBM), etc.

[0045] The thermal conductivity of the first thermally conductive layer DR1 is greater than or equal to 6.0 W / (m·K) and less than or equal to 10.0 W / (m·K). For example, the thermal conductivity of the first thermally conductive layer DR1 can be 6.0 W / (m·K), 6.5 W / (m·K), 7.0 W / (m·K), 7.5 W / (m·K), 8.0 W / (m·K), 8.5 W / (m·K), 9.0 W / (m·K), 9.5 W / (m·K), 10.0 W / (m·K), etc.

[0046] It is understandable that the thermal conductivity of the first thermally conductive layer DR1 is greater than that of the first redistribution layer RDL1.

[0047] The volume resistivity of the first thermally conductive layer DR1 is greater than or equal to 10. 11 Ω·cm and less than or equal to 10 15 For example, the volume resistivity of the first thermally conductive layer DR1 can be 10 Ω·cm. 11 Ω·cm, 10 12 Ω·cm, 10 13 Ω·cm, 10 14 Ω·cm, 10 15 Ω·cm, etc.

[0048] Understandably, the first thermal conductive layer DR1 is made of insulating material to avoid electrical interference with the first rewiring layer RDL1 and to ensure that the electrical transmission performance of the package carrier 100 is not affected.

[0049] The material of the first thermally conductive layer DR1 may include polymer composite materials, including ceramic materials, such as, but not limited to, aluminum nitride (AlN), boron nitride (BN), and alumina (Al2O3). Further, the material of the first thermally conductive layer DR1 may also include epoxy resin, silane coupling agent, and reactive diluent. For example, aluminum nitride includes spherical aluminum nitride (Al2O3), boron nitride (BN) includes flake-shaped boron nitride (BN), and the reactive diluent includes butyl glycidyl ether. For example, in the first thermally conductive layer DR1, the mass percentage of epoxy resin is greater than or equal to 27.5% and less than or equal to 55.0%; the mass percentage of aluminum nitride (AlN) is greater than or equal to 33.0% and less than or equal to 54.7%; the mass percentage of boron nitride (BN) is greater than or equal to 5.5% and less than or equal to 13.6%; the mass percentage of silane coupling agent is greater than or equal to 0.6% and less than or equal to 1.6%; and the mass percentage of reactive diluent is greater than or equal to 2.8% and less than or equal to 7.5%. For example, the mass percentage of epoxy resin can be 27.5%, 30.0%, 40.0%, 50.0%, 55.0%, etc.; the mass percentage of aluminum nitride (AlN) can be 33.0%, 35.0%, 40.0%, 45.0%, 50.0%, 54.7%, etc.; the mass percentage of boron nitride (BN) can be 5.5%, 7.0%, 9.0%, 10.0%, 11.0%, 13.0%, 13.6%, etc.; the mass percentage of silane coupling agent can be 0.6%, 0.9%, 1.0%, 1.1%, 1.3%, 1.5%, 1.6%, etc.; and the mass percentage of reactive diluent can be 2.8%, 3.0%, 4.0%, 5.0%, 6.0%, 7.0%, 7.5%, etc.

[0050] It is worth noting that the side of the first electronic component facing away from the packaging substrate 100 in this application is the same as in related technologies, that is, a heat-conducting layer is provided on the side of the first electronic component facing away from the packaging substrate 100.

[0051] The first thermally conductive layer DR1 absorbs the heat emitted from the bottom of the first electronic component. Since the thermal resistance between the first thermally conductive layer DR1 and the first redistribution layer RDL1 is greater than the thermal resistance between the first thermally conductive layer DR1 and the air, the heat absorbed by the first thermally conductive layer DR1 is transferred to the air.

[0052] In this embodiment, the thermally conductive layer on the side of the first electronic component away from the packaging substrate 100 absorbs the heat dissipated from the top of the first electronic component, and the first thermally conductive layer DR1 absorbs the heat dissipated from the bottom of the first electronic component. Compared with related technologies, this embodiment increases the heat dissipation area, which can effectively reduce the overall temperature of the first electronic component, ensure the working stability of the first electronic component, and extend the service life of the first electronic component. At the same time, it avoids heat accumulation and prevents the first electronic component from detaching from the packaging substrate 100 due to high temperature, ensuring the mechanical reliability of the interconnection between the first electronic component and the packaging substrate 100, and also avoids heat transfer to the packaging substrate 100, thereby avoiding the impact of high temperature on the current transmission quality in the packaging substrate and ensuring the electrical transmission performance of the packaging substrate 100.

[0053] Figure 2 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 2 As shown, the packaging substrate 100 includes a substrate 110, a first redistribution layer RDL1, and a first thermally conductive layer DR1. Specifically, the first redistribution layer RDL1 includes a first metal layer M1; a second thermally conductive layer DR2 is disposed between the first metal layer M1 and the substrate 110. In the operating state, the first metal layer M1 and the first metal portion MB1 between the first metal layer M1 and the substrate 110 are used to transmit current, therefore the first metal layer M1 and the first metal portion MB1 generate heat in the operating state.

[0054] The first thermally conductive layer DR1 surrounds the first metal layer M1 and covers the top part of the first metal layer M1. The first thermally conductive layer DR1 absorbs some of the heat emitted from the sidewalls and top of the first metal layer M1. The second thermally conductive layer DR2 is connected to the first metal layer M1 and surrounds the first metal part MB1. The second thermally conductive layer DR2 absorbs the heat emitted from the bottom of the first metal layer M1 and the first metal part MB1, preventing the heat generated by the first electronic component, the first metal layer M1 and the first metal part MB1 from being transferred to the substrate 110.

[0055] The bottom of the first thermal conductive layer DR1 is connected to the top of the second thermal conductive layer DR2. The heat absorbed by the first thermal conductive layer DR1 can be directly transferred to the air through the interface between the first thermal conductive layer DR1 and the air, or it can be transferred to the air through the second thermal conductive layer DR2, thus increasing the heat transfer path.

[0056] In some embodiments, at least a portion of the second thermally conductive layer DR2 surrounds the sidewall of the substrate 110 (not shown in the figure), further increasing the heat dissipation area of ​​the packaging carrier 100.

[0057] In some embodiments, the thickness of the second thermally conductive layer DR2 along a direction perpendicular to the substrate 110 is greater than or equal to 2 micrometers and less than or equal to 5 micrometers. For example, the thickness of the second thermally conductive layer DR2 can be 2 micrometers, 3 micrometers, 4 micrometers, 5 micrometers, etc.

[0058] In some embodiments, the first metal layer M1 is made of copper; the substrate 110 is made of glass; and the second thermally conductive layer DR2 is made of the same material as the first thermally conductive layer DR1, which will not be described in detail here. It is worth noting that the coefficient of thermal expansion of the second thermally conductive layer DR2 is greater than that of glass but less than that of copper. This effectively alleviates the thermal stress caused by the large difference in the coefficients of thermal expansion between the first metal layer M1 (copper) and the substrate 110 (glass), reducing the risk of cracking in the encapsulation carrier 100, thereby further improving the structural reliability and service life of the encapsulation carrier 100.

[0059] The Young's modulus of the first thermally conductive layer DR1 is greater than or equal to 2.3 GPa and less than or equal to 8 GPa. For example, the Young's modulus of the first thermally conductive layer DR1 can be 2.3 GPa, 3.3 GPa, 4.3 GPa, 5.3 GPa, 6.3 GPa, 7.3 GPa, 8.0 GPa, etc. Since the material of the second thermally conductive layer DR2 is the same as that of the first thermally conductive layer DR1, the Young's modulus of the second thermally conductive layer DR2 is the same as that of the first thermally conductive layer DR1. It is worth noting that when the substrate 110 is made of glass, the Young's modulus of the glass is 70 GPa. The Young's modulus of the second thermally conductive layer DR2 is less than that of the glass, thus buffering the stress caused by the difference in the coefficient of thermal expansion between the substrate 110 and the first metal layer M1, further reducing the risk of cracking of the encapsulation carrier 100.

[0060] In this embodiment, by setting the second thermally conductive layer DR2, the working stability of the first electronic component is ensured, the service life of the first electronic component is extended, the reliability of the interconnection between the first electronic component and the packaging substrate 100 is improved, and the electrical transmission performance of the packaging substrate 100 is enhanced, while the heat transfer path is increased and the thermal stress between the first metal layer M1 and the substrate 110 is reduced.

[0061] Figure 3 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 3 As shown, the structure of the packaging carrier 100 is similar to... Figure 2 The encapsulation substrate 100 shown is similar, except that, along the direction away from the substrate 110, a first dielectric layer JD1 and a third thermally conductive layer DR3 are sequentially disposed between the first metal layer M1 and the second thermally conductive layer DR2.

[0062] The first dielectric layer JD1 is made of polyimide. Along a direction perpendicular to the substrate 110, the thickness of the first dielectric layer JD1 is greater than or equal to 10 micrometers and less than or equal to 20 micrometers. For example, the thickness of the first dielectric layer JD1 can be 10 micrometers, 12 micrometers, 14 micrometers, 16 micrometers, 18 micrometers, 20 micrometers, etc.

[0063] In some embodiments, the material of the third thermal conductive layer DR3 is the same as that of the first thermal conductive layer DR1, which will not be described in detail here.

[0064] In this embodiment, while ensuring the operational stability of the first electronic component, extending its service life, improving the reliability of the interconnection between the first electronic component and the packaging substrate 100, and enhancing the electrical transmission performance of the packaging substrate 100, the first dielectric layer JD1 provides mechanical support for the first metal layer M1, thereby improving the stability of the first metal layer M1. The top of the second thermally conductive layer DR2 is connected to the bottom of the third thermally conductive layer DR3, and the top of the third thermally conductive layer DR3 is connected to the bottom of the first thermally conductive layer DR1, further increasing the path for heat transfer to the air. The third thermally conductive layer DR3 surrounds the portion of the first metal part MB1 between the first metal layer M1 and the substrate 110, and the second thermally conductive layer DR2 surrounds the remaining portion of the first metal part MB1, completely dissipating the heat generated by the first metal part and further preventing heat accumulation.

[0065] Figure 4 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 4 As shown, the structure of the packaging carrier 100 is similar to... Figure 3 The packaged substrate 100 shown is similar, except that the first dielectric layer JD1 surrounds a portion of the first metal portion MB1. This reduces the contact area between the third thermally conductive layer DR3 and the second thermally conductive layer DR2. When the first thermally conductive layer DR1 and the third thermally conductive layer DR3 do not completely transfer the heat generated by the first electronic component and the first metal layer M1 to the air, this reduces the possibility of heat transfer to the second thermally conductive layer DR2, thereby reducing the impact of heat on the substrate 110. It is understood that the first dielectric layer is an insulating layer.

[0066] Figure 5 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 5 As shown, the structure of the packaging carrier 100 is similar to... Figure 2The packaging substrate 100 shown is similar, except that the first redistribution layer RDL1 includes multiple first metal layers M1 and a first insulating layer JY1 disposed between two adjacent first metal layers M1. The first insulating layer JY1 has a second opening k2, and a first interconnect structure HL1 is disposed within the second opening k2. Adjacent first metal layers M1 are electrically connected through the first interconnect structure HL1. A second thermally conductive layer DR2 is disposed between the first metal layer M1 closest to the substrate 110 and the substrate 110. Specifically, the first insulating layer JY1 is a fourth thermally conductive layer DR4.

[0067] In some embodiments, the first metal layer M1 is made of copper; the fourth thermally conductive layer DR4 is made of the same material as the first thermally conductive layer DR1, which will not be described in detail here. It is worth noting that the coefficient of thermal expansion of the fourth thermally conductive layer DR4 is less than that of copper, which effectively alleviates the thermal stress between the two adjacent first metal layers M1 (copper), and further improves the structural reliability and service life of the packaging substrate 100.

[0068] In this embodiment, while ensuring the working stability of the first electronic component, extending the service life of the first electronic component, improving the mechanical reliability of the interconnection between the first electronic component and the packaging substrate 100 and the electrical transmission performance of the packaging substrate 100, the thermal stress between the two adjacent first metal layers M1 is reduced.

[0069] Figure 6 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 6 As shown, the structure of the packaging carrier 100 is similar to... Figure 5 The encapsulation substrate 100 shown is similar, except that, along the direction away from the substrate 110, a first dielectric layer JD1 and a third thermally conductive layer DR3 are sequentially disposed between the first metal layer M1 and the second thermally conductive layer DR2. The third thermally conductive layer DR3 surrounds the first metal portion MB1 and is connected to the fourth thermally conductive layer DR4 and the second thermally conductive layer DR2, respectively.

[0070] In this embodiment, while ensuring the operational stability of the first electronic component, extending its service life, improving the mechanical reliability of the interconnection between the first electronic component and the packaging substrate 100, and enhancing the electrical transmission performance of the packaging substrate 100, the stability of the first metal layer M1 is also improved, and the path for heat transfer to the air is increased. The third thermally conductive layer DR3 surrounds the first metal portion MB1 between the first metal layer M1 and the substrate 110, completely dissipating the heat generated by the first metal portion and further preventing heat accumulation.

[0071] Figure 7 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 7 As shown, the structure of the packaging carrier 100 is similar to... Figure 6The package substrate 100 shown is similar, except that the first dielectric layer JD1 surrounds a portion of the first metal portion MB1. By reducing the contact area between the third thermally conductive layer DR3 and the second thermally conductive layer DR2, the possibility of heat transfer to the second thermally conductive layer DR2 is reduced when the first thermally conductive layer DR1 and the third thermally conductive layer DR3 do not completely transfer the heat generated by the first electronic component and the first metal layer M1 to the air, thereby reducing the impact of heat on the substrate 110.

[0072] Figure 8 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 8 As shown, the structure of the packaging carrier 100 is similar to... Figure 7 The encapsulation substrate 100 shown is similar, except that, along the direction away from the substrate 110, at least a portion of the first insulating layer JY1 includes a second dielectric layer JD2 and a fifth thermal conductive layer DR5 disposed sequentially, and at least a portion of the orthogonal projection of the fifth thermal conductive layer DR5 on the substrate 110 covers the orthogonal projection of the second dielectric layer JD2 on the substrate 110.

[0073] The fifth thermal conductive layer DR5 is made of the same material as the first thermal conductive layer DR1, and the second dielectric layer JD2 is made of the same material as the first dielectric layer JD1. These details will not be elaborated here.

[0074] Specifically, the fifth thermally conductive layer DR5 includes a first thermally conductive portion Z1 and a second thermally conductive portion Z2. The first thermally conductive portion Z1 extends along a first direction X, and its orthographic projection on the substrate 110 coincides with the orthographic projection of the second dielectric layer JD2 on the substrate 110. The second thermally conductive portion Z2 extends along a second direction Y and surrounds the second dielectric layer JD2. The first direction X and the second direction Y intersect, and the first direction X is parallel to the direction of the substrate 110. For example, the first direction X is perpendicular to the second direction Y. It can be understood that the first thermally conductive portion Z1 surrounds part of the first interconnect structure HL1, reducing the contact area between two adjacent fifth thermally conductive layers DR5. This avoids the possibility of heat transfer along the direction close to the substrate 110 when the fifth thermally conductive layer DR5 does not completely transfer the heat generated by the first interconnect structure HL1 and the first metal layer M1 to the air, thereby reducing the impact on the next metal layer or the substrate 110.

[0075] In addition, in this embodiment, while ensuring the working stability of the first electronic component, extending the service life of the first electronic component, improving the mechanical reliability of the interconnection between the first electronic component and the packaging substrate 100, and the electrical transmission performance of the packaging substrate 100, the second dielectric layer JD2 provides mechanical support for the first metal layer M1, thereby improving the stability of the first metal layer M1.

[0076] In some embodiments, the structure of the packaging carrier 100 is similar to... Figure 6Similar to the packaging substrate 100 shown, the difference lies in that, along the direction away from the substrate 110, at least a portion of the first insulating layer JY1 includes a second dielectric layer JD2 and a fifth thermally conductive layer DR5 sequentially disposed, and at least a portion of the orthographic projection of the fifth thermally conductive layer DR5 on the substrate 110 overlaps the orthographic projection of the second dielectric layer JD2 on the substrate 110. Specifically, the fifth thermally conductive layer DR5 includes a first thermally conductive portion Z1 and a second thermally conductive portion Z2. The first thermally conductive portion Z1 extends along a first direction X, and its orthographic projection on the substrate 110 coincides with the orthographic projection of the second dielectric layer JD2 on the substrate 110. The second thermally conductive portion Z2 extends along a second direction Y and is disposed around the second dielectric layer JD2. The first direction X and the second direction Y intersect, and the first direction X is parallel to the direction of the substrate 110. The second dielectric layer JD2 provides mechanical support for the first metal layer M1, improving the stability of the first metal layer M1. Part of the first interconnect structure HL1 is surrounded by the fifth thermal conductive layer DR5, and the remaining part of the first interconnect structure HL1 is surrounded by the second dielectric layer JD2. This reduces the contact area between two adjacent fifth thermal conductive layers DR5, reduces the channel for heat transfer to the substrate 110 when the fifth thermal conductive layer DR5 has not completely transferred the heat to the air, and reduces the impact of heat on the next metal layer.

[0077] Figure 9 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 9 As shown, the structure of the packaging carrier 100 is similar to... Figure 8 Similar to the packaging substrate 100 shown, the difference is that the fifth thermal conductive layer DR5 includes a connected sub-third thermal conductive part Z3, a sub-fourth thermal conductive part Z4, and a sub-fifth thermal conductive part Z5. The sub-third thermal conductive part Z3 extends along the first direction X, and the orthographic projection of the sub-third thermal conductive part Z3 on the substrate 110 coincides with the orthographic projection of the second dielectric layer JD2 on the substrate 110. The sub-fourth thermal conductive part Z4 and the sub-fifth thermal conductive part Z5 extend along the second direction Y. The sub-fourth thermal conductive part Z4 is disposed around the second dielectric layer JD2, and the sub-fifth thermal conductive part Z5 is located between the second dielectric layer JD2 and the first interconnect structure HL1. The first direction X and the second direction Y intersect, and the first direction X is parallel to the direction of the substrate 110. For example, the first direction X is perpendicular to the second direction Y.

[0078] Understandably, the first interconnect structure HL1 is completely surrounded by the heat-conducting part Z5, which further dissipates the heat generated by the first interconnect structure HL1 and further avoids heat accumulation.

[0079] In some embodiments, the structure of the packaging carrier is similar to... Figure 6The encapsulation substrate 100 shown is similar, except that, along the direction away from the substrate 110, at least a portion of the first insulating layer JY1 includes a second dielectric layer JD2 and a fifth thermal conductive layer DR5 disposed sequentially, and at least a portion of the orthogonal projection of the fifth thermal conductive layer DR5 on the substrate 110 covers the orthogonal projection of the second dielectric layer JD2 on the substrate 110. The fifth thermally conductive layer DR5 includes three connected sub-sub-thermal conductive sections Z3, Z4, and Z5. Sub-sub-sub-thermal conductive section Z3 extends along a first direction X, and its orthographic projection on the substrate 110 coincides with the orthographic projection of the second dielectric layer JD2 on the substrate 110. Sub-sub-sub-thermal conductive sections Z4 and Z5 extend along a second direction Y. Sub-sub-sub-thermal conductive section Z4 surrounds the second dielectric layer JD2, and sub-sub-thermal conductive section Z5 is located between the second dielectric layer JD2 and the first interconnect structure HL1. The first direction X and the second direction Y intersect, and the first direction X is parallel to the direction of the substrate 110. For example, the first direction X is perpendicular to the second direction Y. The second dielectric layer JD2 provides mechanical support for the first metal layer M1, improving its stability. It also further dissipates the heat generated by the first interconnect structure HL1, further preventing heat accumulation.

[0080] Figure 10 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 10 As shown, in some embodiments, the substrate 110 includes at least one through-hole TK penetrating the substrate 110. A conductive pillar DZ and a first thermally conductive portion DRB1 surrounding the conductive pillar DZ are disposed within the through-hole TK. The conductive pillar DZ is electrically connected to a first redistribution layer. Specifically, the conductive pillar DZ is electrically connected to a first metal layer M1.

[0081] In some embodiments, the material of the first thermally conductive part DRB1 is the same as the material of the first thermally conductive layer DR1, which will not be described in detail here.

[0082] In this embodiment, a first heat-conducting part DRB1 is provided between the inner wall of the through hole TK and the conductive post DZ to absorb the heat generated by the conductive post DZ during operation, so as to ensure the electrical transmission performance and structural stability of the encapsulation carrier board 100 and extend its service life.

[0083] In some embodiments, the substrate 110 further includes a second heat-conducting portion DRB2, which surrounds the sidewall of the substrate 110 to increase the heat dissipation area of ​​the packaging carrier 100 and improve the heat dissipation efficiency of the packaging carrier 100.

[0084] In some embodiments, thermally conductive layers are also provided on opposite sides of the substrate 110 to connect the first thermally conductive portion DRB1 and the second thermally conductive portion DRB2, further increasing the heat dissipation area of ​​the packaging carrier 100 and allowing the heat from the conductive pillar DZ to be transferred through the first thermally conductive portion DRB1 to the thermally conductive layers on opposite sides of the substrate 110, and then to the second thermally conductive portion DRB2. Heat can be dissipated into the air through the thermally conductive layers on opposite sides of the substrate 110, or it can be transferred through the thermally conductive layers on opposite sides of the substrate 110 to the second thermally conductive portion DRB2 and then dissipated into the air, thus increasing the heat transfer pathways. The thermally conductive layer on one side of the substrate 110 is the aforementioned second thermally conductive layer DR2.

[0085] Figure 11 This is a top view of the conductive pillar and the first heat-conducting part provided in another embodiment of this application. (See attached image.) Figure 11 As shown, in some embodiments, the center O1 of the orthographic projection of the conductive pillar DZ along the direction perpendicular to the substrate coincides with the center O2 of the orthographic projection of the first heat-conducting part DRB1 along the direction perpendicular to the substrate, and the shape of the orthographic projection of the conductive pillar DZ along the direction perpendicular to the substrate is the same as the shape of the orthographic projection of the first heat-conducting part DRB1 along the direction perpendicular to the substrate. That is, the thickness of the first heat-conducting part DRB1 is equal everywhere around the conductive pillar DZ, ensuring that the heat generated by the conductive pillar DZ during operation can be uniformly absorbed by the first heat-conducting part DRB1, avoiding the impact of local heat concentration on the working stability of the conductive pillar DZ and the overall heat dissipation effect of the packaging substrate 100. It is understandable that... Figure 11 This application only shows the case where the shape of the orthographic projection of the conductive post DZ along the direction perpendicular to the substrate and the shape of the orthographic projection of the first heat-conducting part DRB1 along the direction perpendicular to the substrate are both circular. This application does not limit the shape of the orthographic projection of the conductive post DZ along the direction perpendicular to the substrate and the shape of the orthographic projection of the first heat-conducting part DRB1 along the direction perpendicular to the substrate.

[0086] In some embodiments, the ratio of the thickness of the first heat-conducting part DRB1 in the radial direction of the through hole TK to the diameter of the through hole TK is greater than or equal to 1 / 10 and less than or equal to 1 / 8. For example, the ratio of the thickness of the first heat-conducting part DRB1 in the radial direction of the through hole TK to the diameter of the through hole TK is 1 / 8, 1 / 9, 1 / 10, etc.

[0087] In some embodiments, the thickness of the first thermally conductive part DRB1 in the radial direction of the through hole TK is greater than or equal to 2 micrometers and less than or equal to 5 micrometers. For example, the thickness of the first thermally conductive part DRB1 in the radial direction of the through hole TK is 2 micrometers, 3 micrometers, 4 micrometers, 5 micrometers, etc.

[0088] Figure 12 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 12As shown, the package carrier 100 includes: a substrate 110, a first redistribution layer RDL1, a first thermally conductive layer DR1, and a second redistribution layer RDL2. The second redistribution layer RDL2 is located on the side of the substrate 110 away from the first electronic component. Specifically, the second redistribution layer RDL2 includes a second metal layer M2, and a sixth thermally conductive layer DR6 is disposed between the second metal layer M2 and the substrate 110. In the operating state, the second metal layer M2 and the second metal portion MB2 between the second metal layer M2 and the substrate 110 are used to transmit current, therefore the second metal layer M2 and the second metal portion MB2 generate heat in the operating state.

[0089] In this embodiment, the sixth thermally conductive layer DR6 is connected to a portion of the second metal layer M2 and surrounds the second metal portion MB2. The sixth thermally conductive layer DR6 absorbs the heat dissipated from the bottom of the second metal layer M2 and the second metal portion MB2. This reduces the impact of heat on the packaging substrate 100, thereby further improving the overall heat dissipation efficiency and structural stability of the packaging substrate 100.

[0090] In some embodiments, the second metal layer M2 is made of copper; the substrate 110 is made of glass; and the sixth thermally conductive layer DR6 is made of the same material as the first thermally conductive layer DR1, which will not be described in detail here. It is worth noting that the coefficient of thermal expansion of the sixth thermally conductive layer DR6 is greater than that of glass but less than that of copper. This effectively alleviates the thermal stress caused by the large difference in the coefficients of thermal expansion between the second metal layer M2 (copper) and the substrate 110 (glass), reducing the risk of cracking in the encapsulation carrier 100, thereby further improving the structural reliability and service life of the encapsulation carrier 100.

[0091] In some embodiments, at least a portion of the sixth thermally conductive layer DR6 surrounds the sidewall of the substrate 110 (not shown in the figure), further increasing the heat dissipation area of ​​the package carrier 100. It is understood that the sixth thermally conductive layer DR6 forms a portion of the aforementioned second thermally conductive portion DRB2, as well as a thermally conductive layer opposite to the second thermally conductive layer DR2.

[0092] Figure 13 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 13 As shown, the structure of the packaging carrier 100 is similar to... Figure 12Similar to the packaging substrate 100 shown, the difference lies in that the second redistribution layer RDL2 includes multiple layers of second metal layers M2 and a second insulating layer JY2 disposed between two adjacent second metal layers M2. The second insulating layer JY2 is provided with a third opening k3, and a second interconnect structure HL2 is disposed within the third opening k3. Adjacent second metal layers M2 are electrically connected through the second interconnect structure HL2. A sixth thermally conductive layer DR6 is disposed between the second metal layer M2 closest to the substrate 110 and the substrate 110. Specifically, along the direction away from the substrate 110, at least a portion of the second insulating layer JY2 includes a third dielectric layer JD3 and a seventh thermally conductive layer DR7 disposed sequentially. The orthographic projection of at least a portion of the seventh thermally conductive layer DR7 on the substrate 110 covers the orthographic projection of the third dielectric layer JD3 on the substrate 110.

[0093] The material of the seventh thermal conductive layer DR7 is the same as that of the first thermal conductive layer DR1, and the material of the second dielectric layer JD2 is the same as that of the first dielectric layer JD1. These details will not be elaborated here.

[0094] Furthermore, the second interconnect structure HL2 is connected to the third dielectric layer JD3 and the seventh thermal conductive layer DR7, reducing the contact area between the seventh thermal conductive layer DR7 and the sixth thermal conductive layer DR6, as well as between two adjacent seventh thermal conductive layers DR7. This avoids the possibility of heat transfer in the direction away from the substrate 110 when the seventh thermal conductive layer DR7 does not completely transfer the heat generated by the second interconnect structure HL2 and the second metal layer M2 to the air, thereby reducing the impact on the next metal layer.

[0095] In some embodiments, the structure of the packaging carrier 100 is similar to that shown in the figure, except that a fourth dielectric layer and a ninth thermally conductive layer are sequentially disposed between the second metal layer M2 and the sixth thermally conductive layer DR6 along the direction away from the substrate 110. The material of the ninth thermally conductive layer is the same as that of the first thermally conductive layer DR1, and will not be described in detail here. Specifically, the positional relationship between the sixth thermally conductive layer DR6, the fourth dielectric layer, and the ninth thermally conductive layer is the same as the positional relationship between the second thermally conductive layer DR2, the first dielectric layer JD1, and the third thermally conductive layer DR3, and will not be described in detail here. The fourth dielectric layer enhances the structural stability of the second metal layer.

[0096] In some embodiments, the structure of the packaging carrier 100 is similar to... Figure 13The packaging substrate 100 shown is similar, except that, along the direction away from the substrate 110, a fourth dielectric layer and a ninth thermally conductive layer are sequentially disposed between the second metal layer M2 and the sixth thermally conductive layer DR6. The material of the ninth thermally conductive layer is the same as that of the first thermally conductive layer DR1, and will not be described further here. Specifically, the positional relationship between the sixth thermally conductive layer DR6, the fourth dielectric layer, and the ninth thermally conductive layer is the same as the positional relationship between the second thermally conductive layer DR2, the first dielectric layer JD1, and the third thermally conductive layer DR3, and will not be described further here. The fourth dielectric layer enhances the structural stability of the second metal layer.

[0097] In some embodiments, the structure of the packaging carrier 100 is similar to... Figure 13 The packaging substrate 100 shown is similar, except that the second insulating layer JY2 is the tenth thermally conductive layer. The positional relationship between the tenth thermally conductive layer, the second metal layer M2, and the second interconnect structure HL2 is the same as the positional relationship between the fourth thermally conductive layer DR4, the first metal layer M1, and the first interconnect structure HL1, which will not be elaborated here. Furthermore, the material of the tenth thermally conductive layer is the same as that of the first thermally conductive layer DR1, which will also not be elaborated here. Understandably, the tenth thermally conductive layer increases the heat transfer channels and improves heat transfer efficiency.

[0098] In some embodiments, the structure of the packaging carrier 100 is similar to... Figure 13 The packaging substrate 100 shown is similar, except that the second interconnect structure HL2 is only surrounded by the seventh thermally conductive layer DR7. The positional relationship of the seventh thermally conductive layer DR7, the second metal layer M2, the second interconnect structure HL2, and the third dielectric layer JD3 is the same as that of the fifth thermally conductive layer DR5, the first metal layer M1, the first interconnect structure HL1, and the second dielectric layer JD2, which will not be elaborated here. This arrangement effectively dissipates the heat generated by the second interconnect structure HL2, further preventing heat accumulation.

[0099] Figure 14 This is a schematic diagram of the packaging carrier provided in another embodiment of this application. For example... Figure 14 As shown, the package carrier 100 includes a substrate 110, a first redistribution layer RDL1, a first thermal conductive layer DR1, a second redistribution layer RDL2, and an eighth thermal conductive layer DR8. The second redistribution layer RDL2 and the eighth thermal conductive layer DR8 are located on the side of the substrate 110 away from the first thermal conductive layer DR1 and are arranged sequentially in a direction away from the substrate 110. The eighth thermal conductive layer DR8 is provided with a fourth opening k4, and the second redistribution layer RDL2 is electrically connected to the second electronic component through the fourth opening k4.

[0100] Specifically, the second electronic component includes one or more of the following: integrated circuit (IC), high-bandwidth memory (HBM), and printed circuit board (PCB).

[0101] The material of the eighth thermal conductive layer DR8 is the same as that of the first thermal conductive layer DR1, which will not be described in detail here.

[0102] In this embodiment, by providing an eighth thermally conductive layer DR8 on the side of the second redistribution layer RDL2 away from the substrate 110, the working stability of the first electronic component is ensured, the service life of the first electronic component is extended, the mechanical reliability of the interconnection between the first electronic component and the packaging carrier 100 and the electrical transmission performance of the packaging carrier 100 are improved, and the heat dissipation area of ​​the packaging carrier 100 is further increased to increase the heat dissipation capacity of the packaging carrier 100. This prevents the heat generated by the second redistribution layer RDL2 itself and the structure located on the side of the second redistribution layer RDL2 close to the substrate 110 from being transferred to the second electronic component, further preventing heat accumulation, improving the working stability of the second electronic component, extending the service life of the second electronic component, improving the mechanical reliability of the interconnection between the second electronic component and the packaging carrier 100 and the electrical transmission performance of the packaging carrier 100.

[0103] Figure 15 This is a schematic flowchart of a method for preparing a packaging carrier plate according to an embodiment of this application. Figure 15 As shown, the method for preparing the packaging substrate includes: Step S101: Provide a substrate.

[0104] Step S102: Prepare a first redistribution layer on one side of the substrate.

[0105] Step S103: Prepare a first thermally conductive layer on the side of the first redistribution layer away from the substrate.

[0106] The first thermally conductive layer has a first opening, and the first redistribution layer is electrically connected to the first electronic component through the first opening.

[0107] Understandably, the first thermally conductive layer absorbs the heat emitted from the bottom of the first electronic component. Since the thermal resistance between the first thermally conductive layer and the first redistribution layer is greater than the thermal resistance between the first thermally conductive layer and the air, the heat absorbed by the first thermally conductive layer is transferred to the air.

[0108] In this embodiment, a first thermally conductive layer is provided between the first wiring layer and the first electronic component. The thermally conductive layer on the side of the first electronic component facing away from the packaging substrate absorbs the heat dissipated from the top of the first electronic component, and the first thermally conductive layer absorbs the heat dissipated from the bottom of the first electronic component. Compared with related technologies, this embodiment increases the heat dissipation area, which can effectively reduce the overall temperature of the first electronic component, ensure the working stability of the first electronic component, and extend the service life of the first electronic component. At the same time, it avoids heat accumulation, ensures the mechanical reliability of the interconnection between the first electronic component and the packaging substrate, and also avoids heat transfer to the packaging substrate, ensuring the electrical transmission performance of the packaging substrate.

[0109] In some embodiments, the substrate includes a glass substrate. Figure 16 and Figure 17 This is a schematic flowchart illustrating a method for preparing a packaging substrate 100 according to an embodiment of this application. Figure 16 and Figure 17 As shown, step S101 provides a substrate, including: providing a glass carrier plate 111, and forming at least one through hole TK on the glass carrier plate using a laser-induced etching process to form a substrate 110.

[0110] Figure 18 and Figure 19 This is a schematic flowchart of a method for preparing a packaging carrier plate according to an embodiment of this application, as shown below. Figure 18 and Figure 19As shown, in some embodiments, before the first redistribution layer is formed on one side of the substrate in step S102, the method for preparing the packaging substrate further includes: forming a second thermally conductive layer DR2 and a sixth thermally conductive layer DR6 on opposite sides of the substrate 110, forming a first thermally conductive portion DRB1 on the sidewall of the through-hole TK, and forming a second thermally conductive portion DRB2 on the sidewall of the substrate 110. It is worth noting that the second thermally conductive layer DR2, the sixth thermally conductive layer DR6, the first thermally conductive portion DRB1, and the second thermally conductive portion DRB2 are made of the same material. Specifically, a thermally conductive material is added to the upper surface of the substrate 110. At room temperature, the thermally conductive material is liquid. A vacuum injection process is used to uniformly cover the upper surface of the substrate 110 and flow to the sidewall of the through-hole TK and the sidewall of the substrate 110. The thermally conductive material does not completely fill the through-hole TK; some of the thermally conductive material flows to the lower surface of the substrate 110. The substrate 110 is heated to cure the thermally conductive material at high temperature, thereby forming a second thermally conductive layer DR2 on the upper surface of the substrate 110, a first thermally conductive portion DRB1 on the sidewall of the through-hole TK, a second thermally conductive portion DRB2 on the sidewall of the substrate 110, and at least a partial sixth thermally conductive layer DR6 on the lower surface of the substrate 110. It is understood that if the sixth thermally conductive layer DR6 does not completely cover the lower surface of the substrate 110, the substrate 110 is flipped, and thermally conductive material is added to the surface not covered by the sixth thermally conductive layer DR6. The thermally conductive material covers the surface not covered by the sixth thermally conductive layer DR6 and is cured at high temperature so that the sixth thermally conductive layer DR6 completely covers the surface of the substrate 110 opposite to the second thermally conductive layer DR2. It is understood that the sixth thermally conductive layer DR6 and the second thermally conductive layer DR2 are connected through the first thermally conductive portion DRB1 and the second thermally conductive portion DRB2. The heating temperature of the thermally conductive material is greater than or equal to 180 ℃ and less than or equal to 250 ℃. For example, the heating temperature of the thermally conductive material is 180 ℃, 190 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, etc.

[0111] In other embodiments, the thermally conductive material completely fills the through-hole TK. After high-temperature heating, the thermally conductive material that has been cured in the through-hole TK is opened using a laser process to form the first thermally conductive part DRB1.

[0112] A first seed layer is formed on the surface of the first heat-conducting part DRB1 using a physical vapor deposition (PVD) process. Along the radial direction of the via TK, the first seed layer sequentially includes a titanium layer and a copper layer. The thickness of the titanium layer is greater than or equal to 50 micrometers and less than or equal to 100 micrometers, and the thickness of the copper layer is greater than or equal to 100 micrometers and less than or equal to 200 micrometers. For example, the thickness of the titanium layer can be 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, etc. The thickness of the copper layer can be 100 micrometers, 110 micrometers, 120 micrometers, 130 micrometers, 140 micrometers, 150 micrometers, 160 micrometers, 170 micrometers, 180 micrometers, 190 micrometers, 200 micrometers, etc.

[0113] Conductive pillars DZ are fabricated on the surface of the first seed layer using an electroplating process. In this embodiment, the first thermally conductive part DRB1 is made of an insulating material and absorbs the heat generated by the conductive pillars DZ.

[0114] Figures 20 to 24 This is a schematic flowchart of a method for preparing a packaging carrier plate according to an embodiment of this application, as shown below. Figures 20 to 24 As shown, in some embodiments, step S102, which involves fabricating a first redistribution layer on one side of the substrate, includes: forming a first dielectric material layer JDM1 on the surface of the second thermally conductive layer DR2 away from the substrate 110; creating holes in the first dielectric material layer using a laser process to expose conductive pillars DZ and a portion of the second thermally conductive layer DR2; and forming the first dielectric layer JD1. A third thermally conductive material layer DRM3 is then formed on the side of the first dielectric layer JD1 away from the substrate 110, with at least a portion of the third thermally conductive material layer DRM3 surrounding the sidewalls of the first dielectric layer JD1 and connected to the second thermally conductive layer DR2.

[0115] The third thermally conductive material layer DRM3 is cured at high temperature, and holes are made in the third thermally conductive material layer DRM3 using laser technology. The holes expose at least the conductive pillars DZ, forming the third thermally conductive layer DR3. It is understood that the heating temperature range of the third thermally conductive material layer DRM3 is the same as that of the thermally conductive material, which will not be elaborated here.

[0116] A second seed layer is formed on the side of the third thermally conductive layer DR3 away from the substrate 110 and in the area exposed by the opening formed in the third thermally conductive layer DR3 using a physical vapor deposition process. The second seed layer includes a titanium layer and a copper layer in the direction away from the substrate 110.

[0117] A first metal material layer is formed on the side of the second seed layer away from the substrate 110, and the first metal material layer is patterned to form a first metal layer M1.

[0118] A second dielectric material layer is formed on the side of the first metal layer M1 facing away from the substrate 110. The second dielectric material layer is patterned, i.e., an opening process is performed on the second dielectric material layer using a laser process to form a second dielectric layer JD2. The second dielectric layer JD2 exposes at least a portion of the first metal layer M1. A fifth thermally conductive material layer is formed on the side of the second dielectric layer JD2 facing away from the substrate 110. At least a portion of the fifth thermally conductive material layer surrounds the sidewall of the second dielectric layer JD2 and is connected to the third thermally conductive layer DR3.

[0119] The fifth thermally conductive material layer is cured at high temperature, and a laser process is used to create openings in the fifth thermally conductive material layer, exposing at least the first metal layer M1. Understandably, the heating temperature range of the fifth thermally conductive material layer is the same as that of the thermally conductive material itself, and will not be elaborated upon here.

[0120] A third seed layer is formed on the side of the fifth thermally conductive layer DR5 away from the substrate 110 and in the area exposed by the opening formed in the fifth thermally conductive layer DR5 using a physical vapor deposition process. The third seed layer includes a titanium layer and a copper layer in the direction away from the substrate 110.

[0121] A first metal material layer is formed again on the side of the third seed layer facing away from the substrate 110. The first metal material layer is then patterned to form the first metal layer M1. This process is repeated to complete the fabrication of the first redistribution layer.

[0122] Figure 25 and Figure 26 This is a schematic flowchart of a method for preparing a packaging carrier plate according to an embodiment of this application, as shown below. Figure 25 and Figure 26 As shown, in some embodiments, before the first thermally conductive layer is formed on the side of the first redistribution layer away from the substrate in step S103, the packaging substrate 100 may be electrically connected to the first electronic component E1. Specifically, solder balls HQ are connected to the side of the outermost first metal layer M1 away from the substrate 110, and the first electronic component E1 is connected to the side of the solder balls away from the substrate 110.

[0123] In other embodiments, a first thermally conductive material layer is formed on the side of the outermost first metal layer M1 facing away from the substrate 110, and the first thermally conductive material layer is connected to the fifth thermally conductive layer DR5. The first thermally conductive material layer is cured at high temperature, and a first opening k1 is formed by laser technology to create an opening in the first thermally conductive material layer, forming the first thermally conductive layer DR1. The first opening k1 exposes at least the first metal layer M1. It is understood that the heating temperature range of the first thermally conductive material layer is the same as the heating temperature range of the thermally conductive material, which will not be elaborated here. A solder ball HQ is placed in the first opening k1, and a first electronic component E1 is then connected to the solder ball HQ.

[0124] The fabrication methods for the second wiring layer RDL2 and the eighth thermal conductive layer DR8 are similar and will not be described in detail here. It should be noted that this application only uses the structure of one packaging substrate 100 as an example to illustrate the fabrication process.

[0125] Figure 27 This is a schematic diagram of the packaging structure provided in one embodiment of this application. For example... Figure 27 As shown, this application also provides a packaging structure 200, which includes: a first electronic component E1, a packaging carrier 100, and a second electronic component E2, wherein the packaging carrier 100 includes the packaging carrier 100 mentioned above or the packaging carrier 100 prepared by the preparation method of the packaging carrier mentioned above; the first electronic component E1 and the second electronic component E2 are electrically connected through the packaging carrier 100.

[0126] Understandably, the package carrier 100 is connected to the first electronic component E1 via solder balls, and the package carrier 100 is also connected to the second electronic component E2 via solder balls.

[0127] The first electronic component E1 includes integrated circuits (ICs) and / or high-bandwidth memory (HBM), etc. The second electronic component includes one or more of integrated circuits (ICs), high-bandwidth memory (HBM), printed circuit boards (PCBs), etc.

[0128] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0129] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0130] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0131] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0132] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

[0133] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A packaging carrier board, characterized in that, The packaging substrate is used for electrical connection with the first electronic component, and the packaging substrate includes: substrate; The first wiring layer is located on one side of the substrate; The first thermally conductive layer is located on the side of the first redistribution layer that is away from the substrate; The first thermally conductive layer has a first opening, and the first redistribution layer is electrically connected to the first electronic component through the first opening.

2. The packaging carrier board according to claim 1, characterized in that, The first redistribution layer includes a first metal layer; a second thermally conductive layer is disposed between the first metal layer and the substrate; or The first redistribution layer includes multiple first metal layers and a first insulating layer disposed between two adjacent first metal layers. The first insulating layer is provided with a second opening, and a first interconnect structure is disposed in the second opening. Adjacent first metal layers are electrically connected through the first interconnect structure. A second thermally conductive layer is disposed between the first metal layer closest to the substrate and the substrate.

3. The packaging carrier board according to claim 2, characterized in that, Along a direction away from the substrate, a first dielectric layer and a third thermally conductive layer are sequentially disposed between the first metal layer and the second thermally conductive layer.

4. The packaging carrier board according to claim 2 or 3, characterized in that, The first insulating layer is the fourth thermally conductive layer.

5. The packaging carrier board according to claim 2 or 3, characterized in that, Along a direction away from the substrate, at least a portion of the first insulating layer includes a second dielectric layer and a fifth thermally conductive layer disposed sequentially, and at least a portion of the orthogonal projection of the fifth thermally conductive layer on the substrate covers the orthogonal projection of the second dielectric layer on the substrate.

6. The packaging carrier board according to claim 5, characterized in that, The fifth thermal conductive layer includes a first thermal conductive portion and a second thermal conductive portion. The first thermal conductive portion extends along a first direction, and the orthographic projection of the first thermal conductive portion on the substrate coincides with the orthographic projection of the second dielectric layer on the substrate. The second thermal conductive portion extends along a second direction and is disposed around the second dielectric layer. The first direction and the second direction intersect, and the first direction is parallel to the direction of the substrate.

7. The packaging carrier board according to claim 5, characterized in that, The fifth thermally conductive layer includes a third sub-thermal conductive section, a fourth sub-thermal conductive section, and a fifth sub-thermal conductive section connected together. The third sub-thermal conductive section extends along a first direction, and its orthographic projection on the substrate coincides with the orthographic projection of the second dielectric layer on the substrate. The fourth and fifth sub-thermal conductive sections extend along a second direction. The fourth sub-thermal conductive section is disposed around the second dielectric layer, and the fifth sub-thermal conductive section is located between the second dielectric layer and the first interconnect structure. The first direction and the second direction intersect, and the first direction is parallel to the substrate direction.

8. The packaging carrier board according to claim 1, characterized in that, The substrate includes at least one through hole penetrating the substrate, a conductive post is disposed in the through hole and a first heat-conducting portion surrounding the conductive post, and the conductive post is electrically connected to the first redistribution layer.

9. The packaging carrier board according to claim 1, characterized in that, The packaging substrate further includes a second wiring layer, which is located on the side of the substrate away from the first electronic component; The second redistribution layer includes a second metal layer, and a sixth thermally conductive layer is disposed between the second metal layer and the substrate; or The second redistribution layer includes multiple second metal layers and a second insulating layer disposed between two adjacent second metal layers. The second insulating layer is provided with a third opening, and a second interconnect structure is disposed within the third opening. Adjacent second metal layers are electrically connected through the second interconnect structure. A sixth thermally conductive layer is disposed between the second metal layer closest to the substrate and the substrate.

10. The packaging carrier board according to claim 9, characterized in that, Along a direction away from the substrate, at least a portion of the second insulating layer includes a third dielectric layer and a seventh thermally conductive layer disposed sequentially, and at least a portion of the orthogonal projection of the seventh thermally conductive layer on the substrate covers the orthogonal projection of the third dielectric layer on the substrate.

11. The packaging carrier board according to claim 1, characterized in that, The packaging substrate is also used for electrical connection with a second electronic component. The packaging substrate further includes a second redistribution layer and an eighth thermal conductive layer. The second redistribution layer and the eighth thermal conductive layer are located on the side of the substrate away from the first thermal conductive layer and are arranged sequentially in a direction away from the substrate. The eighth thermally conductive layer is provided with a fourth opening, and the second redistribution layer is electrically connected to the second electronic component through the fourth opening.

12. A packaging structure, characterized in that, include: First electronic component; A packaging carrier, comprising the packaging carrier according to any one of claims 1 to 11; The second electronic component, wherein the first electronic component and the second electronic component are electrically connected through the packaging carrier.

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